Wearing state detection method and device, equipment and storage medium

Abstract

The invention discloses a wearing state detection method and device, equipment and a storage medium, and relates to the technical field of intelligent equipment.The method comprises the steps that when the current magnetic field intensity of a magnet assembly does not meet the preset intensity condition, the current temperature is adjusted through a temperature adjusting assembly; the current angles of the multiple magnetic resistance sensing devices and the magnet assemblies with the relative rotation relation are detected respectively, and magnetic field direction change data are determined according to the current angles; and when each piece of magnetic field direction change data meets a preset change condition, detecting a wearing state of the target intelligent equipment according to target data in each piece of magnetic field direction change data. Through the above mode, the temperature adjusting assembly is utilized to ensure that the magnetic field intensity of the magnet assembly meets the preset intensity condition, and then the wearing state of the target intelligent device is determined by utilizing the magnetic field direction change data detected by the plurality of magnetic resistance sensing devices, so that the accuracy and sensitivity of wearing state detection can be effectively improved; and the detection cost and delay are reduced.

Description

Technical Field

[0001] The present application relates to the technical field of smart devices, and in particular to a wearing status detection method, apparatus, device and storage medium. Background Art

[0002] With the increasing popularity of smart devices, their intelligent functions have become a focus of user attention, such as wearing status detection. Currently, the common method for detecting wearing status relies on Hall sensors, accelerometers, etc. However, accelerometers are prone to false detection when stationary, and it takes a long time from the start of detection to the detection result, resulting in high latency. In addition, Hall sensors are unstable in weak magnetic field environments, resulting in low sensitivity and high manufacturing and integration costs. Therefore, the accuracy and sensitivity of the above methods in detecting wearing status are low.

[0003] The above content is only used to assist in understanding the technical solution of this application and does not constitute an admission that the above content is prior art. Summary of the Invention

[0004] The main purpose of this application is to provide a wearing status detection method, device, equipment and storage medium, aiming to solve the technical problems of low accuracy and sensitivity in the existing technology for detecting wearing status.

[0005] To achieve the above objectives, the present application proposes a wearing status detection method, which includes: Acquire a current temperature of a magnet assembly provided on a target smart device, and determine a current magnetic field strength of the magnet assembly according to the current temperature; When the current magnetic field strength does not meet the preset strength condition, adjusting the current temperature by a temperature adjustment component corresponding to the magnet component; Respectively detecting current angles between a plurality of magnetoresistive sensing devices disposed on the target smart device and the magnet assembly, and determining magnetic field direction change data based on the current angles; wherein a relative rotational relationship exists between the plurality of magnetoresistive sensing devices and the magnet assembly; When each of the magnetic field direction change data satisfies a preset change condition, the wearing state of the target smart device is detected according to the target data in each of the magnetic field direction change data.

[0006] In one embodiment, when the current magnetic field strength does not meet the preset strength condition, the step of adjusting the current temperature by a temperature adjustment component corresponding to the magnet assembly includes: When the current magnetic field strength does not meet the preset strength condition, determining a magnetic field strength difference according to the current magnetic field strength and the preset strength condition; Acquiring characteristic information and material information of the magnet assembly, and determining a temperature difference corresponding to the magnetic field intensity difference based on the characteristic information and the material information; determining a target operating parameter of a temperature adjustment assembly corresponding to the magnet assembly according to the temperature difference; The temperature adjustment component is controlled to adjust the current temperature in a manner of operating according to the target operating parameters.

[0007] In one embodiment, the step of respectively detecting current angles between a plurality of magnetoresistive sensing devices provided on the target smart device and the magnet assembly, and determining magnetic field direction change data based on the current angles, includes: respectively controlling a plurality of magnetic resistance sensor devices provided on the target smart device to start; respectively detecting the current angles of the multiple activated magnetic resistance sensing devices and the magnet assembly at the current moment and the historical angles at the previous moment; Determine a relative angle change value based on the current angle and the historical angle; Magnetic field direction change data is determined according to the relative angle change value.

[0008] In one embodiment, when each of the magnetic field direction change data satisfies a preset change condition, the step of detecting the wearing state of the target smart device according to the target data in each of the magnetic field direction change data includes: When each of the magnetic field direction change data satisfies a preset change condition, respectively detecting the distance between each of the magnetic resistance sensor devices and the magnet assembly; Selecting target data from each of the magnetic field direction change data according to the distance; determining a target resistance change value according to the target data, and generating a wearing state identification signal according to the target resistance change value; The wearing state of the target smart device is detected according to the wearing state identification signal.

[0009] In one embodiment, after the steps of respectively detecting the current angles between the plurality of magnetoresistive sensing devices provided on the target smart device and the magnet assembly and determining the magnetic field direction change data according to the current angles, the method further includes: When any data in each of the magnetic field direction change data does not meet a preset change condition, respectively performing fault detection on the plurality of magnetoresistive sensor devices; determining a faulty reluctance sensing device and a normal reluctance sensing device according to a fault detection result; When the distance between the faulty magnetoresistance sensor device and the magnet assembly is greater than or equal to the distance between the normal magnetoresistance sensor device and the magnet assembly, selecting the magnetic field direction change data of the normal magnetoresistance sensor device from the respective magnetic field direction change data; A first resistance change value is determined according to the magnetic field direction change data of the normal magnetoresistive sensing device, and a wearing state of the target smart device is detected according to the first resistance change value.

[0010] In one embodiment, after the step of determining the faulty magnetic resistance sensing device and the normal magnetic resistance sensing device according to the fault detection result, the method further includes: When the distance between the faulty magnetic resistance sensor device and the magnet assembly is smaller than the distance between the normal magnetic resistance sensor device and the magnet assembly, obtaining position information of the faulty magnetic resistance sensor device on the target smart device; generating device fault prompt information according to the location information, and displaying the device fault prompt information on a terminal connected to the target smart device; The second resistance change value is determined based on the distance between the normal magnetoresistance sensing device and the magnet assembly, the distance between the fault magnetoresistance sensing device and the magnet assembly, and the magnetic field direction change data of the normal magnetoresistance sensing device, and the wearing status of the target smart device is detected based on the second resistance change value.

[0011] In one embodiment, after the step of detecting the wearing state of the target smart device according to the target data in each of the magnetic field direction change data when each of the magnetic field direction change data satisfies the preset change condition, the method further includes: When the wearing state is the unworn state, triggering the sleep function of the target smart device according to the device sleep instruction; When the wearing state is the fully wearing state, triggering a wake-up function of the target smart device according to a device wake-up instruction; When the wearing state is the semi-wearing state, collecting image information of the user by a camera device provided on the target smart device, and extracting feature information of the image information; When the feature information exists in the historical feature database, searching for target interaction data specific to the user according to the feature information; Interact with the user according to the target interaction data.

[0012] In addition, to achieve the above-mentioned purpose, the present application also proposes a wearing state detection device, which includes: an acquisition module, configured to acquire a current temperature of a magnet assembly provided on a target smart device, and determine a current magnetic field strength of the magnet assembly according to the current temperature; an adjustment module, configured to adjust the current temperature by means of a temperature adjustment component corresponding to the magnet assembly when the current magnetic field strength does not meet a preset strength condition; a determination module, configured to respectively detect current angles between a plurality of magnetoresistive sensing devices provided on the target smart device and the magnet assembly, and determine magnetic field direction change data based on the current angles; wherein a relative rotational relationship exists between the plurality of magnetoresistive sensing devices and the magnet assembly; The determination module is further configured to detect the wearing state of the target smart device according to the target data in each of the magnetic field direction change data when each of the magnetic field direction change data satisfies a preset change condition.

[0013] In addition, to achieve the above-mentioned purpose, the present application also proposes a wearing status detection device, which includes: a memory, a processor, and a computer program stored on the memory and runnable on the processor, and the computer program is configured to implement the steps of the wearing status detection method as described above.

[0014] In addition, to achieve the above-mentioned purpose, the present application also proposes a storage medium, which is a computer-readable storage medium. A computer program is stored on the storage medium, and when the computer program is executed by the processor, the steps of the wearing status detection method described above are implemented.

[0015] One or more technical solutions proposed in this application have at least the following technical effects: obtaining the current temperature of the magnet assembly set on the target smart device, and determining the current magnetic field strength of the magnet assembly based on the current temperature; when the current magnetic field strength does not meet the preset strength condition, adjusting the current temperature through the temperature adjustment component corresponding to the magnet assembly; respectively detecting the current angles between the multiple magnetoresistive sensing devices set on the target smart device and the magnet assembly, and determining the magnetic field direction change data based on the current angle; wherein, there is a relative rotation relationship between the multiple magnetoresistive sensing devices and the magnet assembly; when each of the magnetic field direction change data meets the preset change condition, detecting the wearing state of the target smart device according to the target data in each of the magnetic field direction change data. In the above manner, the temperature adjustment component is used to ensure that the magnetic field strength of the magnet assembly meets the preset strength condition, and then the magnetic field direction change data detected by the multiple magnetoresistive sensing devices are used to determine the wearing state of the target smart device, thereby effectively improving the accuracy and sensitivity of detecting the wearing state, and reducing the detection cost and delay. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the present application.

[0017] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0018] Figure 1 A flowchart of the first embodiment of the wearing status detection method of the present application is provided; Figure 2 This is a schematic diagram of the overall structure of the first embodiment of the wearing status detection method of the present application; Figure 3 A flowchart of the second embodiment of the wearing status detection method of the present application is provided; Figure 4 This is a schematic diagram of the module structure of the wearing status detection device according to an embodiment of the present application; Figure 5 This is a schematic diagram of the device structure of the hardware operating environment involved in the wearing status detection method in the embodiment of the present application.

[0019] The purpose, features and advantages of this application will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0020] It should be noted that the execution subject of this embodiment can be a computing service device with data processing, network communication, and program execution functions, such as a tablet computer, personal computer, mobile phone, etc., or an electronic device capable of performing the above functions, a wearing status detection device, etc. The following uses the wearing status detection device as an example to illustrate this embodiment and the following embodiments.

[0021] Based on this, the embodiment of the present application provides a wearing status detection method, referring to Figure 1 , Figure 1 This is a flow chart of the first embodiment of the wearing status detection method of the present application.

[0022] In this embodiment, the wearing status detection method includes steps S10 to S40: Step S10: Acquire the current temperature of the magnet assembly provided on the target smart device, and determine the current magnetic field strength of the magnet assembly according to the current temperature.

[0023] It should be noted that the reference Figure 2 , Figure 2The overall structure diagram is as follows: the target smart device is AR (Augmented Reality) glasses, the magnetoresistive sensor device is AMR switch (Anisotropic Magneto The AR glasses are described using an AMR switch as an example, where 1 represents AR glasses, 2 represents an AMR switch, 3 represents a front frame, 4 represents a temperature adjustment component, 5 represents a magnet component, 6 represents a hinge, and 7 represents a temple. The magnet component is arranged on the front frame structure of the AR glasses, and its installation methods include but are not limited to gluing, magnetization, snap-fitting, screw locking, etc., and the shape of the magnet component can be a ring formed by off-axis arrangement of multiple small magnet units. The magnetic poles of the magnet component are divided into a north pole (N pole) and a south pole (S pole). The temperature adjustment component is arranged adjacent to the magnet component and is used to adjust the temperature of the magnet component. The front frame and temple of the AR glasses can be connected by a hinge, and the temple can be rotated within a certain range around the hinge rotation axis. Multiple AMR switches are respectively arranged on different temples. For example, one AMR switch is provided on the left temple and one on the right temple. Its installation methods include but are not limited to gluing, magnetization, snap-fitting, screw locking, etc. The arrangement of the above-mentioned AMR switch and the magnet assembly is not fixed, and it is only necessary to ensure that the two can rotate relative to each other. For example, the magnet assembly is arranged on the temples of the AR glasses, and multiple AMR switches are respectively arranged on the front frame of the AR glasses.

[0024] It can be understood that an AMR switch refers to a sensor that uses the anisotropic magnetoresistance effect to detect changes in magnetic fields. It achieves switching functionality by detecting changes in resistance caused by the magnetic field. The principle is: the resistance of a ferromagnetic magnet assembly changes with the direction of the applied magnetic field. When the magnetic field is parallel to the direction of the current, the resistance is minimum; when the magnetic field is perpendicular to the direction of the current, the resistance is maximum. When the external magnetic field forms a zero-degree angle with the direction of the magnet's built-in magnetic field, the resistance does not change with changes in the external magnetic field. However, when the external magnetic field forms a certain angle with the magnet's built-in magnetic field, the internal magnetization vector of the magnet shifts, and the film resistance decreases. This characteristic is called the anisotropic magnetoresistance effect. In other words, the AMR switch changes its resistance by detecting changes in the magnetic field direction, thereby triggering the switching action. AMR switches consume energy only when detecting changes in the magnetic field and do not require continuous power supply, significantly reducing power consumption. They are very suitable for battery-powered target smart devices. Compared with Hall sensors, AMR switches can operate stably in weaker magnetic field environments, have a faster response speed compared to the delays of acceleration sensors and optical sensors, and can detect the opening and closing status of the temples in real time. AMR switches do not require complex mechanical structures or optical components, and have high integration, simple design, and low cost. They are not easily affected by external factors such as environmental humidity, dust, and light, and have higher reliability and stability than capacitive sensors and optical sensors. They use non-contact detection methods, are free of mechanical wear defects, and have a longer service life than mechanical switches.

[0025] It should be understood that temperature affects the magnetic field strength of the magnet assembly. For example, high temperatures can cause magnetic moment disturbance and weakening of magnetism. To effectively improve the current angle between the individual reluctance sensing devices and the magnet assembly, it is necessary to determine the current magnetic field strength of the magnet assembly based on the current temperature. The magnet unit may be a small neodymium iron boron magnet.

[0026] In addition, in order to avoid the situation where the current magnetic field strength does not meet the preset strength conditions, this embodiment can also directly set the magnetic field strength of the magnet assembly so that it meets the preset strength conditions, and add a magnetic shielding layer and a temperature shielding layer around the target smart device to eliminate external interference and reduce the impact of the environmental magnetic field.

[0027] Step S20: When the current magnetic field strength does not meet the preset strength condition, the current temperature is adjusted by a temperature adjustment component corresponding to the magnet component.

[0028] It can be understood that when it is determined that the current magnetic field strength does not meet the preset strength conditions, it indicates that the magnetic field strength of the magnet assembly is weak. At this time, the current temperature can be adjusted by the temperature adjustment assembly corresponding to the magnet assembly to achieve the purpose of enhancing the magnetic field strength, for example, by lowering the temperature of the magnet assembly.

[0029] Furthermore, step S20 includes: when the current magnetic field strength does not meet the preset strength condition, determining the magnetic field strength difference based on the current magnetic field strength and the preset strength condition; obtaining the characteristic information and material information of the magnet assembly, and determining the temperature difference corresponding to the magnetic field strength difference based on the characteristic information and the material information; determining the target operating parameters of the temperature adjustment assembly corresponding to the magnet assembly based on the temperature difference; and controlling the temperature adjustment assembly to adjust the current temperature in a manner that operates according to the target operating parameters.

[0030] It should be understood that in order to effectively improve the accuracy of adjusting the current temperature, when it is determined that the current magnetic field strength does not meet the preset strength conditions, the magnetic field strength difference is determined based on the current magnetic field strength and the preset strength conditions. Since the way in which magnet components with different characteristic information and different material information determine the temperature difference is different, it is necessary to determine the temperature difference corresponding to the magnetic field strength difference based on the characteristic information and material information. The target operating parameter refers to the operating parameter that can adjust the current temperature of the magnet component so that the adjusted current temperature meets the preset strength conditions.

[0031] Step S30, respectively detecting the current angles between the plurality of magnetoresistive sensing devices provided on the target smart device and the magnet assembly, and determining the magnetic field direction change data according to the current angles; wherein a relative rotational relationship exists between the plurality of magnetoresistive sensing devices and the magnet assembly.

[0032] It should be understood that the current angle refers to the angle between the multiple magnetoresistive sensor devices and the magnet assembly set on the target smart device at the current moment. Since the magnetoresistive sensor device will rotate with the temple, when the temple is in different states, the angle between the magnetoresistive sensor device and the magnet assembly is different, and the relative angles between the multiple magnetoresistive sensor devices and the magnet assembly change, resulting in a change in the direction of the magnetic field. At this time, the magnetic field direction change data can be determined based on the current angle.

[0033] Furthermore, the steps of respectively detecting the current angles of the multiple magnetoresistive sensing devices provided on the target smart device and the magnet assembly, and determining the magnetic field direction change data based on the current angles, include: respectively controlling the startup of the multiple magnetoresistive sensing devices provided on the target smart device; respectively detecting the current angles of the multiple started magnetoresistive sensing devices and the magnet assembly at the current moment and the historical angles at the previous moment; determining the relative angle change value based on the current angle and the historical angle; and determining the magnetic field direction change data based on the relative angle change value.

[0034] It should be noted that when it is detected that the temples of the target smart device start to rotate, multiple magnetoresistive sensor devices set on the target smart device are controlled to start respectively. At this time, the angles between the multiple magnetoresistive sensor devices and the magnet assembly are continuously detected. For example, the current angle at the current moment, the historical angle at the previous moment, etc. The relative angle change value refers to the change value of the angle from the previous moment to the current moment. After determining the relative angle change value based on the current angle and the historical angle, the magnetic field direction change data is determined based on the relative angle change value.

[0035] Furthermore, after step S30, it also includes: when any data in each of the magnetic field direction change data does not meet the preset change conditions, performing fault detection on the multiple magnetoresistance sensor devices respectively; determining the faulty magnetoresistance sensor device and the normal magnetoresistance sensor device according to the fault detection result; when the distance between the faulty magnetoresistance sensor device and the magnet assembly is greater than or equal to the distance between the normal magnetoresistance sensor device and the magnet assembly, selecting the magnetic field direction change data of the normal magnetoresistance sensor device from each of the magnetic field direction change data; determining a first resistance change value based on the magnetic field direction change data of the normal magnetoresistance sensor device, and detecting the wearing status of the target smart device based on the first resistance change value.

[0036] It should be understood that when any data in the magnetic field direction change data does not meet the preset change conditions, it indicates that there is a fault in at least one magnetoresistive sensor device. At this time, it is necessary to perform fault detection on multiple magnetoresistive sensor devices separately to distinguish between faulty magnetoresistive sensor devices and normal magnetoresistive sensor devices.

[0037] It can be understood that in order to effectively improve the accuracy of detecting the wearing status of the target smart device, this embodiment will determine the resistance change value based on the magnetic field direction change data of the normal magnetoresistance sensor device closest to the magnet assembly. When it is determined that the distance between the faulty magnetoresistance sensor device and the magnet assembly is greater than or equal to the distance between the normal magnetoresistance sensor device and the magnet assembly, it indicates that the normal magnetoresistance sensor device is closest and in a normal state. At this time, the magnetic field direction change data of the normal magnetoresistance sensor device is selected from each magnetic field direction change data, and the first resistance change value is determined based on the magnetic field direction change data of the normal magnetoresistance sensor device. The number of magnetic pole increases is determined based on the first resistance change value, and the number of magnetic pole increases is converted into a corresponding wearing status identification signal through a signal processing circuit, which is used to identify the opening and closing angles of the temples, and then detect the wearing status of the target smart device.

[0038] Furthermore, after the step of determining the faulty magnetoresistance sensing device and the normal magnetoresistance sensing device based on the fault detection result, it also includes: when the distance between the faulty magnetoresistance sensing device and the magnet assembly is smaller than the distance between the normal magnetoresistance sensing device and the magnet assembly, obtaining the position information of the faulty magnetoresistance sensing device set on the target smart device; generating device fault prompt information based on the position information, and displaying the device fault prompt information on a terminal connected to the target smart device; determining a second resistance change value based on the distance between the normal magnetoresistance sensing device and the magnet assembly, the distance between the faulty magnetoresistance sensing device and the magnet assembly, and the magnetic field direction change data of the normal magnetoresistance sensing device, and detecting the wearing status of the target smart device based on the second resistance change value.

[0039] It can be understood that when it is determined that the distance between the faulty magnetoresistance sensor device and the magnet assembly is smaller than the distance between the normal magnetoresistance sensor device and the magnet assembly, it indicates that the faulty magnetoresistance sensor device is close, but the faulty magnetoresistance sensor device is in a faulty state. At this time, the magnetic field direction change data of the faulty magnetoresistance sensor device is not available. At this time, device fault prompt information is generated based on the position information, and the device fault prompt information is displayed on the terminal connected to the target smart device to prompt professional staff to replace the faulty magnetoresistance sensor device.

[0040] It should be noted that in order to detect the wearing status of the target smart device based on the existence of a fault in the magnetoresistance sensing device, this embodiment sets multiple magnetoresistance sensing devices on the target smart device, and starts multiple magnetoresistance sensing devices to detect the wearing status at the same time. Since the normal magnetoresistance sensing device is far away, if the magnetic field direction change data of the normal magnetoresistance sensing device is directly used for detection at this time, there will be errors. In order to effectively improve the accuracy of detecting the wearing status of the target smart device, the magnetic field direction change data of the faulty magnetoresistance sensing device is predicted according to the distance between the normal magnetoresistance sensing device and the magnet assembly, the distance between the faulty magnetoresistance sensing device and the magnet assembly, and the magnetic field direction change data of the normal magnetoresistance sensing device. At this time, the second resistance change value can be determined according to the magnetic field direction change data of the faulty magnetoresistance sensing device, and then the number of magnetic pole increases can be determined according to the second resistance change value. The number of magnetic pole increases is converted into a corresponding wearing status identification signal through a signal processing circuit, which is used to identify the opening and closing angles of the temples, and then detect the wearing status of the target smart device.

[0041] Step S40: When each of the magnetic field direction change data satisfies a preset change condition, detecting the wearing state of the target smart device according to the target data in each of the magnetic field direction change data.

[0042] It is understood that when all magnetic field direction change data satisfy the preset change conditions, it indicates that all magnetoresistive sensing devices are normal. In this case, to effectively improve the accuracy of detecting the wearing status of the target smart device, the magnetic field direction change data of the magnetoresistive sensing device that is closer is extracted from the various magnetic field direction change data to detect the wearing status of the target smart device. In addition, the magnetic field direction change data of the magnetoresistive sensing device that is farther away can also be used to verify the wearing status.

[0043] Furthermore, after step S40, it also includes: when the wearing state is the non-wearing state, triggering the sleep function of the target smart device according to the device sleep instruction; when the wearing state is the full wearing state, triggering the wake-up function of the target smart device according to the device wake-up instruction; when the wearing state is the semi-wearing state, collecting the user's image information through the camera device set on the target smart device, and extracting the feature information of the image information; when the feature information exists in the historical feature database, searching for target interaction data exclusive to the user according to the feature information; and interacting with the user according to the target interaction data.

[0044] It should be understood that the wearing states in this embodiment are divided into three types: unworn state, fully worn state, and half-worn state. The half-worn state refers to a state in which the user does not wear the target smart device correctly, for example, the temples are not fully opened before wearing, the device does not fit the head size, etc., and the half-worn state can be further divided into a large-angle half-worn state, a small-angle half-worn state, etc. When the wearing state is unworn state, it indicates that the user is not wearing the target smart device. At this time, the sleep function of the target smart device can be triggered according to the device sleep instruction, so that the target smart device is in a sleep state; when the wearing state is fully worn state, it indicates that the user has worn the target smart device correctly. At this time, the wake-up function of the target smart device can be triggered according to the device wake-up instruction, so that the target smart device is in an active state.

[0045] It is understandable that when the wearing state is determined to be a semi-wearing state, it indicates that the user is not wearing the target smart device correctly. At this time, in order to improve the user experience, it is necessary to collect the user's image information, and when the feature information exists in the historical feature database, the target interaction data exclusive to the user is searched according to the feature information. The target interaction data can be pictures, text, etc. The application that displays the target interaction data has lower power consumption and consumes less electricity.

[0046] It should be noted that this embodiment will also provide feedback to the R&D end on the eversion angle of the target smart device in different wearing states, thereby obtaining real data feedback from users, facilitating subsequent product development and organizing user group portrait data.

[0047] This embodiment obtains the current temperature of the magnet assembly provided on the target smart device, and determines the current magnetic field strength of the magnet assembly based on the current temperature; when the current magnetic field strength does not meet the preset strength condition, the current temperature is adjusted by a temperature adjustment component corresponding to the magnet assembly; the current angles of the multiple magnetoresistive sensing devices provided on the target smart device and the magnet assembly are respectively detected, and the magnetic field direction change data is determined based on the current angles; wherein, there is a relative rotational relationship between the multiple magnetoresistive sensing devices and the magnet assembly; when each of the magnetic field direction change data meets the preset change condition, the wearing state of the target smart device is detected based on the target data in each of the magnetic field direction change data. In the above manner, the temperature adjustment component is used to ensure that the magnetic field strength of the magnet assembly meets the preset strength condition, and then the magnetic field direction change data detected by the multiple magnetoresistive sensing devices are used to determine the wearing state of the target smart device, thereby effectively improving the accuracy and sensitivity of detecting the wearing state, and reducing the detection cost and delay.

[0048] Based on the first embodiment of the present application, in the second embodiment of the present application, the same or similar contents as those in the above embodiment 1 can be referred to the above introduction and will not be described in detail later. Figure 3 Step S40 includes steps S401 to S404: Step S401 : When each of the magnetic field direction change data satisfies a preset change condition, the distance between each of the magnetoresistive sensor devices and the magnet assembly is detected respectively.

[0049] It should be noted that when the data on the change in direction of each magnetic field meets the preset change conditions, it indicates that all magnetoresistive sensing devices are normal. At this time, the distance between each magnetoresistive sensing device and the magnet assembly is detected respectively to determine the magnetoresistive sensing device closest to the magnet assembly.

[0050] Step S402 : selecting target data from each of the magnetic field direction change data according to the distance.

[0051] It can be understood that the target data refers to the magnetic field direction change data of the magnetoresistive sensor device closest to the magnet assembly. After detecting the distance between each magnetoresistive sensor device and the magnet assembly, the magnetoresistive sensor device closest to the magnet assembly is determined, and the magnetic field direction change data of the magnetoresistive sensor device closest to the magnet assembly is selected from the various magnetic field direction change data, that is, the target data.

[0052] Step S403 : determining a target resistance change value according to the target data, and generating a wearing state identification signal according to the target resistance change value.

[0053] It should be understood that the target resistance change value refers to the value of the resistance change caused by the change in the relative angle between the magnetoresistive sensing device closest to the magnet assembly and the magnet assembly, and the wearing state identification signal refers to the signal used to identify the wearing state of the target smart device. After determining the target resistance change value, the number of increased magnetic poles is determined according to the target resistance change value, and the number of increased magnetic poles is converted into a corresponding wearing state identification signal through a signal processing circuit, wherein the magnet assembly is opened 5 times and closed 5 times in a week, and the angular resolution is 36°.

[0054] Step S404: Detect the wearing state of the target smart device according to the wearing state identification signal.

[0055] It can be understood that the wearing state refers to the state of the user wearing the smart device at the current moment. After generating a wearing state identification signal according to the target resistance change value, the wearing state of the target smart device is detected according to the wearing state identification signal.

[0056] In this embodiment, when each of the magnetic field direction change data satisfies a preset change condition, the distance between each magnetoresistance sensing device and the magnet assembly is detected separately; target data is selected from each of the magnetic field direction change data based on the distance; a target resistance change value is determined based on the target data, and a wearing state identification signal is generated based on the target resistance change value; and the wearing state of the target smart device is detected based on the wearing state identification signal. Through the above method, when each of the magnetic field direction change data satisfies the preset change condition, the magnetic field direction change data of the magnetoresistance sensing device closest to the magnet assembly is selected from each of the magnetic field direction change data, and the wearing state of the target smart device is detected based on the wearing state identification signal, thereby effectively improving the accuracy of detecting the wearing state.

[0057] This application also provides a wearing status detection device, please refer to Figure 4 , the wearing status detection device includes: The acquisition module 10 is used to acquire the current temperature of the magnet assembly provided on the target smart device, and determine the current magnetic field strength of the magnet assembly according to the current temperature.

[0058] The adjustment module 20 is configured to adjust the current temperature by using a temperature adjustment component corresponding to the magnet component when the current magnetic field strength does not meet a preset strength condition.

[0059] The determination module 30 is used to respectively detect the current angles between multiple magnetoresistive sensing devices provided on the target smart device and the magnet assembly, and determine the magnetic field direction change data based on the current angles; wherein, there is a relative rotational relationship between the multiple magnetoresistive sensing devices and the magnet assembly.

[0060] The determination module 30 is further configured to detect the wearing state of the target smart device according to the target data in each of the magnetic field direction change data when each of the magnetic field direction change data satisfies a preset change condition.

[0061] This embodiment obtains the current temperature of the magnet assembly provided on the target smart device, and determines the current magnetic field strength of the magnet assembly based on the current temperature; when the current magnetic field strength does not meet the preset strength condition, the current temperature is adjusted by a temperature adjustment component corresponding to the magnet assembly; the current angles of the multiple magnetoresistive sensing devices provided on the target smart device and the magnet assembly are respectively detected, and the magnetic field direction change data is determined based on the current angles; wherein, there is a relative rotational relationship between the multiple magnetoresistive sensing devices and the magnet assembly; when each of the magnetic field direction change data meets the preset change condition, the wearing state of the target smart device is detected based on the target data in each of the magnetic field direction change data. In the above manner, the temperature adjustment component is used to ensure that the magnetic field strength of the magnet assembly meets the preset strength condition, and then the magnetic field direction change data detected by the multiple magnetoresistive sensing devices are used to determine the wearing state of the target smart device, thereby effectively improving the accuracy and sensitivity of detecting the wearing state, and reducing the detection cost and delay.

[0062] The wearing state detection device provided in this application, employing the wearing state detection method of the aforementioned embodiment, can resolve the technical issues of low accuracy and sensitivity in detecting wearing state in the prior art. Compared to the prior art, the beneficial effects of the wearing state detection device provided in this application are the same as those of the wearing state detection method provided in the aforementioned embodiment. Other technical features of the wearing state detection device are the same as those disclosed in the aforementioned embodiment and are not further elaborated here.

[0063] In one embodiment, the adjustment module 20 is further used to determine the magnetic field strength difference based on the current magnetic field strength and the preset strength condition when the current magnetic field strength does not meet the preset strength condition; obtain the characteristic information and material information of the magnet assembly, and determine the temperature difference corresponding to the magnetic field strength difference based on the characteristic information and the material information; determine the target operating parameters of the temperature adjustment assembly corresponding to the magnet assembly based on the temperature difference; and control the temperature adjustment assembly to adjust the current temperature in a manner that operates according to the target operating parameters.

[0064] In one embodiment, the determination module 30 is also used to control the startup of multiple magnetoresistive sensing devices provided on the target smart device respectively; respectively detect the current angles of the multiple started magnetoresistive sensing devices and the magnet assembly at the current moment and the historical angles at the previous moment; determine the relative angle change value based on the current angle and the historical angle; and determine the magnetic field direction change data based on the relative angle change value.

[0065] In one embodiment, the determination module 30 is further used to perform fault detection on the multiple magnetoresistance sensor devices respectively when any data in each of the magnetic field direction change data does not meet the preset change conditions; determine the faulty magnetoresistance sensor device and the normal magnetoresistance sensor device based on the fault detection result; when the distance between the faulty magnetoresistance sensor device and the magnet assembly is greater than or equal to the distance between the normal magnetoresistance sensor device and the magnet assembly, select the magnetic field direction change data of the normal magnetoresistance sensor device from each of the magnetic field direction change data; determine a first resistance change value based on the magnetic field direction change data of the normal magnetoresistance sensor device, and detect the wearing status of the target smart device based on the first resistance change value.

[0066] In one embodiment, the determination module 30 is further used to obtain the position information of the faulty magnetoresistance sensing device on the target smart device when the distance between the faulty magnetoresistance sensing device and the magnet assembly is less than the distance between the normal magnetoresistance sensing device and the magnet assembly; generate device fault prompt information based on the position information, and display the device fault prompt information on a terminal connected to the target smart device; determine a second resistance change value based on the distance between the normal magnetoresistance sensing device and the magnet assembly, the distance between the faulty magnetoresistance sensing device and the magnet assembly, and the magnetic field direction change data of the normal magnetoresistance sensing device, and detect the wearing status of the target smart device based on the second resistance change value.

[0067] In one embodiment, the determination module 30 is also used to respectively detect the distance between each magnetoresistance sensing device and the magnet assembly when each of the magnetic field direction change data meets the preset change conditions; select target data from each of the magnetic field direction change data according to the distance; determine the target resistance change value according to the target data, and generate a wearing status identification signal according to the target resistance change value; and detect the wearing status of the target smart device according to the wearing status identification signal.

[0068] In one embodiment, the determination module 30 is further used to trigger the sleep function of the target smart device according to the device sleep instruction when the wearing state is the non-wearing state; trigger the wake-up function of the target smart device according to the device wake-up instruction when the wearing state is the full wearing state; when the wearing state is the semi-wearing state, collect the user's image information through the camera device set on the target smart device, and extract feature information of the image information; when the feature information exists in the historical feature database, search for target interaction data exclusive to the user according to the feature information; and interact with the user according to the target interaction data.

[0069] The present application provides a wearing status detection device, which includes: at least one processor; and a memory communicatively connected to the at least one processor; wherein the memory stores instructions that can be executed by the at least one processor, and the instructions are executed by the at least one processor so that the at least one processor can execute the wearing status detection method in the above-mentioned embodiment one.

[0070] Reference below Figure 5 , which shows a schematic diagram of the structure of a wearing state detection device suitable for implementing the embodiments of the present application. The wearing state detection device in the embodiments of the present application may include, but is not limited to, mobile terminals such as mobile phones, laptop computers, digital broadcast receivers, PDAs (Personal Digital Assistants), PADs (Portable Application Descriptions), PMPs (Portable Media Players), in-vehicle terminals (such as in-vehicle navigation terminals), and fixed terminals such as digital TVs and desktop computers. Figure 5 The wearing status detection device shown is merely an example and should not limit the functions and scope of use of the embodiments of the present application.

[0071] like Figure 5As shown, the wearing state detection device may include a processing device 1001 (e.g., a central processing unit, graphics processing unit, etc.), which can perform various appropriate actions and processes based on programs stored in ROM (Read Only Memory) 1002 or programs loaded from storage device 1003 into RAM (Random Access Memory) 1004. RAM 1004 also stores various programs and data required for the operation of the wearing state detection device. Processing device 1001, ROM 1002, and RAM 1004 are interconnected via a bus 1005. An input / output (I / O) interface 1006 is also connected to the bus. Typically, the following systems can be connected to I / O interface 1006: input device 1007 including, for example, a touch screen, touchpad, keyboard, mouse, image sensor, microphone, accelerometer, gyroscope, etc.; output device 1008 including, for example, a liquid crystal display (LCD), speaker, vibrator, etc.; storage device 1003 including, for example, a magnetic tape, hard disk, etc.; and communication device 1009. The communication device 1009 can allow the wearing state detection device to communicate with other devices wirelessly or wired to exchange data. Although the figure shows a wearing state detection device with various systems, it should be understood that it is not required to implement or have all of the systems shown. More or fewer systems can be implemented or provided instead.

[0072] In particular, according to the embodiments disclosed herein, the processes described above with reference to the flowcharts can be implemented as computer software programs. The computer programs contain program code for executing the methods shown in the flowcharts. In such embodiments, the computer programs can be downloaded and installed from a network via a communication device, or installed from storage device 1003, or installed from ROM 1002. When the computer programs are executed by processing device 1001, the above-described functions defined in the methods of the embodiments disclosed herein are performed.

[0073] The wearing state detection device provided in this application, which utilizes the wearing state detection method described in the above-mentioned embodiment, can resolve the technical issues of low accuracy and sensitivity in detecting wearing state in the prior art. Compared with the prior art, the beneficial effects of the wearing state detection device provided in this application are the same as those of the wearing state detection method described in the above-mentioned embodiment. The other technical features of the wearing state detection device are the same as those disclosed in the method described in the above-mentioned embodiment and are not further described here.

[0074] It should be understood that the various parts disclosed in this application can be implemented using hardware, software, firmware, or a combination thereof. In the description of the above embodiments, specific features, structures, materials, or characteristics can be combined in any one or more embodiments or examples in a suitable manner.

[0075] The above description is merely a specific embodiment of the present application, but the scope of protection of the present application is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in this application should be included in the scope of protection of this application. Therefore, the scope of protection of this application should be based on the scope of protection of the claims.

[0076] The present application provides a computer-readable storage medium having computer-readable program instructions (ie, a computer program) stored thereon, and the computer-readable program instructions are used to execute the wearing status detection method in the above-mentioned embodiment.

[0077] The computer-readable storage medium provided herein may be, for example, a USB flash drive, but is not limited to electrical, magnetic, optical, electromagnetic, infrared, or semiconductor systems, systems, or devices, or any combination thereof. More specific examples of computer-readable storage media may include, but are not limited to, an electrical connection having one or more wires, a portable computer disk, a hard disk, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination thereof. In this embodiment, the computer-readable storage medium may be any tangible medium that contains or stores a program that can be used by or in conjunction with an instruction execution system, system, or device. The program code contained on the computer-readable storage medium may be transmitted using any suitable medium, including, but not limited to, wires, optical cables, RF (Radio Frequency), etc., or any suitable combination thereof.

[0078] The computer-readable storage medium may be included in the wearing state detection device, or may exist independently without being incorporated into the wearing state detection device.

[0079] Computer program code for performing the operations of the present application may be written in one or more programming languages, or a combination thereof, including object-oriented programming languages ​​such as Java, Smalltalk, C++, and conventional procedural programming languages ​​such as "C" or similar programming languages. The program code may be executed entirely on the user's computer, partially on the user's computer, as a stand-alone software package, partially on the user's computer and partially on a remote computer, or entirely on a remote computer or server. In the case of a remote computer, the remote computer may be connected to the user's computer via any type of network, including a local area network (LAN) or a wide area network (WAN), or may be connected to an external computer (e.g., via the Internet using an Internet service provider).

[0080] The flow charts and block diagrams in the accompanying drawings illustrate the possible implementation architecture, functions and operations of the systems and methods according to various embodiments of the present application. In this regard, each box in the flow chart or block diagram can represent a module, program segment, or a part of code, and the module, program segment, or a part of code contains one or more executable instructions for realizing the specified logical function. It should also be noted that in some alternative implementations, the functions marked in the box can also occur in a different order than that marked in the accompanying drawings. For example, two boxes represented in succession can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each box in the block diagram and / or flow chart, and the combination of the boxes in the block diagram and / or flow chart can be implemented by a dedicated hardware-based system that performs the specified function or operation, or can be implemented by a combination of dedicated hardware and computer instructions.

[0081] The modules described in the embodiments of the present application may be implemented in software or hardware, wherein the name of a module does not necessarily limit the unit itself.

[0082] The computer-readable storage medium provided in this application stores computer-readable program instructions (i.e., a computer program) for executing the aforementioned wearing state detection method. This computer-readable storage medium can address the technical issues of low accuracy and sensitivity in detecting wearing state in the prior art. Compared to the prior art, the beneficial effects of the computer-readable storage medium provided in this application are similar to those of the wearing state detection method provided in the aforementioned embodiments, and are not further elaborated here.

[0083] The above description is only part of the embodiments of the present application and does not limit the patent scope of the present application. All equivalent structural transformations made by using the contents of the present application specification and drawings under the technical concept of the present application, or direct / indirect application in other related technical fields are included in the patent protection scope of the present application.

Claims

1. A wearing status detection method, characterized in that: The method comprises: Acquire a current temperature of a magnet assembly provided on a target smart device, and determine a current magnetic field strength of the magnet assembly according to the current temperature; When the current magnetic field strength does not meet the preset strength condition, adjusting the current temperature by a temperature adjustment component corresponding to the magnet component; Respectively detecting current angles between a plurality of magnetoresistive sensing devices disposed on the target smart device and the magnet assembly, and determining magnetic field direction change data based on the current angles; wherein a relative rotational relationship exists between the plurality of magnetoresistive sensing devices and the magnet assembly; When each of the magnetic field direction change data satisfies a preset change condition, the wearing state of the target smart device is detected according to the target data in each of the magnetic field direction change data.

2. The method according to claim 1, wherein When the current magnetic field strength does not meet the preset strength condition, the step of adjusting the current temperature by a temperature adjustment component corresponding to the magnet component includes: When the current magnetic field strength does not meet the preset strength condition, determining a magnetic field strength difference according to the current magnetic field strength and the preset strength condition; Acquiring characteristic information and material information of the magnet assembly, and determining a temperature difference corresponding to the magnetic field intensity difference based on the characteristic information and the material information; determining a target operating parameter of a temperature adjustment assembly corresponding to the magnet assembly according to the temperature difference; The temperature adjustment component is controlled to adjust the current temperature in a manner of operating according to the target operating parameters.

3. The method according to claim 1, wherein The step of respectively detecting the current angles between the plurality of magnetoresistive sensing devices provided on the target smart device and the magnet assembly, and determining the magnetic field direction change data according to the current angles, comprises: respectively controlling a plurality of magnetic resistance sensor devices provided on the target smart device to start; respectively detecting the current angles of the multiple activated magnetic resistance sensing devices and the magnet assembly at the current moment and the historical angles at the previous moment; Determine a relative angle change value based on the current angle and the historical angle; Magnetic field direction change data is determined according to the relative angle change value.

4. The method according to claim 1, wherein The step of detecting the wearing state of the target smart device according to the target data in each of the magnetic field direction change data when each of the magnetic field direction change data satisfies a preset change condition includes: When each of the magnetic field direction change data satisfies a preset change condition, respectively detecting the distance between each of the magnetic resistance sensor devices and the magnet assembly; Selecting target data from each of the magnetic field direction change data according to the distance; determining a target resistance change value according to the target data, and generating a wearing state identification signal according to the target resistance change value; The wearing state of the target smart device is detected according to the wearing state identification signal.

5. The method according to claim 1, wherein After the steps of respectively detecting the current angles between the plurality of magnetoresistive sensing devices provided on the target smart device and the magnet assembly and determining the magnetic field direction change data according to the current angles, the method further includes: When any data in each of the magnetic field direction change data does not meet a preset change condition, respectively performing fault detection on the plurality of magnetoresistive sensor devices; determining a faulty reluctance sensing device and a normal reluctance sensing device according to a fault detection result; When the distance between the faulty magnetoresistance sensor device and the magnet assembly is greater than or equal to the distance between the normal magnetoresistance sensor device and the magnet assembly, selecting the magnetic field direction change data of the normal magnetoresistance sensor device from the respective magnetic field direction change data; A first resistance change value is determined according to the magnetic field direction change data of the normal magnetoresistive sensing device, and a wearing state of the target smart device is detected according to the first resistance change value.

6. The method according to claim 5, wherein After the step of determining the faulty magnetic resistance sensing device and the normal magnetic resistance sensing device according to the fault detection result, the method further includes: When the distance between the faulty magnetic resistance sensor device and the magnet assembly is smaller than the distance between the normal magnetic resistance sensor device and the magnet assembly, obtaining position information of the faulty magnetic resistance sensor device on the target smart device; generating device fault prompt information according to the location information, and displaying the device fault prompt information on a terminal connected to the target smart device; The second resistance change value is determined based on the distance between the normal magnetoresistance sensing device and the magnet assembly, the distance between the fault magnetoresistance sensing device and the magnet assembly, and the magnetic field direction change data of the normal magnetoresistance sensing device, and the wearing status of the target smart device is detected based on the second resistance change value.

7. The method according to any one of claims 1 to 6, characterized in that After the step of detecting the wearing state of the target smart device according to the target data in each of the magnetic field direction change data when each of the magnetic field direction change data satisfies the preset change condition, the method further includes: When the wearing state is the unworn state, triggering the sleep function of the target smart device according to the device sleep instruction; When the wearing state is the fully wearing state, triggering a wake-up function of the target smart device according to a device wake-up instruction; When the wearing state is the semi-wearing state, collecting image information of the user by a camera device provided on the target smart device, and extracting feature information of the image information; When the feature information exists in the historical feature database, searching for target interaction data specific to the user according to the feature information; Interact with the user according to the target interaction data.

8. A wearing status detection device, characterized in that: The device comprises: an acquisition module, configured to acquire a current temperature of a magnet assembly provided on a target smart device, and determine a current magnetic field strength of the magnet assembly according to the current temperature; an adjustment module, configured to adjust the current temperature by means of a temperature adjustment component corresponding to the magnet assembly when the current magnetic field strength does not meet a preset strength condition; a determination module, configured to respectively detect current angles between a plurality of magnetoresistive sensing devices provided on the target smart device and the magnet assembly, and determine magnetic field direction change data based on the current angles; wherein a relative rotational relationship exists between the plurality of magnetoresistive sensing devices and the magnet assembly; The determination module is further configured to detect the wearing state of the target smart device according to the target data in each of the magnetic field direction change data when each of the magnetic field direction change data satisfies a preset change condition.

9. A wearing status detection device, characterized in that: The device includes: a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the computer program is configured to implement the steps of the wearing state detection method according to any one of claims 1 to 7.

10. A storage medium, characterized in that: The storage medium is a computer-readable storage medium, and a computer program is stored on the storage medium. When the computer program is executed by a processor, the steps of the wearing state detection method according to any one of claims 1 to 7 are implemented.

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