Exposure method and semiconductor device

Abstract

The invention provides an exposure method and a semiconductor device. According to the exposure method, the exposure scanning directions of the exposure areas in the same row or the same column are the same in the exposure process. Therefore, in the exposure process, the exposure scanning direction can be changed only after the exposure of one row or one column of exposure areas is completed, the operation times of driving the wafer to execute arc-shaped motion by the wafer bearing table are effectively reduced, the exposure time is saved, the exposure efficiency is improved, and the production cost is reduced. And the leakage of exposure lens immersion liquid caused by the movement of the wafer driven by the wafer bearing table is effectively reduced, the problem of pattern exposure defects is relieved, and the photoetching quality is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular to an exposure method and a semiconductor device. Background Art

[0002] Photolithography is a crucial step in integrated circuit manufacturing. It utilizes a photochemical reaction to transfer circuit patterns onto a photoresist-coated wafer through a mask. Development and etching are then performed to create the chip's micro- and nanostructures. Due to the high cost of photolithography machines and the critical importance of the photolithography process, wafer fabs are dedicated to researching how to increase the number of wafers processed per hour (WPH) and reduce the number of lithography defects generated by these machines. Current processes primarily aim to improve the efficiency of photolithography machines by increasing the exposure dose and scanning speed.

[0003] However, if Figure 1 and Figure 2 As shown, the conventional exposure scanning method is Scan up scandown (SUSD). The upward scan S1 and the downward scan S2 are two opposite scanning directions on the surface of the wafer 10. In addition, in the conventional scanning path, the scanning directions of the two adjacent exposure areas 100 are different, one is the upward scan S1 and the other is the downward scan S2. Therefore, Figure 2 As shown, each scan of an exposure area 100 requires the wafer stage to move the wafer in an arc to switch the scanning direction. This arcuate motion of the wafer stage not only prolongs exposure time and affects efficiency, but also causes leakage of immersion fluid from the lithography lens, leading to pattern exposure defects. Therefore, existing improvements that increase the exposure dose still fail to effectively improve lithography tool efficiency and reduce lithography defects.

[0004] Therefore, a new exposure method is urgently needed to solve the above technical problems. Summary of the Invention

[0005] The object of the present invention is to provide an exposure method and a semiconductor device to solve the technical problem of how to improve exposure efficiency and exposure quality.

[0006] In order to solve the above technical problems, the present invention provides an exposure method, comprising:

[0007] Providing a wafer, wherein the surface of the wafer is divided into a plurality of exposure areas distributed in an array;

[0008] A photolithography machine is used to expose each exposure area one by one along a preset path; wherein the preset path includes row-by-row and / or column-by-column exposure, and the exposure scanning direction of the exposure areas in the same row or column is the same.

[0009] Optionally, in the exposure method, the preset path includes a serpentine path; wherein, during the exposure process:

[0010] The photolithography machine exposes each of the exposure areas column by column, and the exposure scanning directions of the exposure areas in adjacent columns are opposite; or, the photolithography machine exposes each of the exposure areas row by row, and the exposure scanning directions of the exposure areas in adjacent rows are opposite.

[0011] Optionally, in the exposure method, the preset path includes a U-shaped path; the U-shaped path includes multiple circles of U-shaped paths nested in sequence, and during the exposure process, each of the exposure areas is exposed circle by circle from the inside to the outside or from the outside to the inside.

[0012] Optionally, in the exposure method, during the exposure of the exposure areas distributed in a circle:

[0013] After the photolithography machine exposes a column of the exposure areas, it exposes an adjacent row of the exposure areas; and after the photolithography machine exposes a row of the exposure areas, it exposes an adjacent column of the exposure areas; and the exposure scanning directions of the adjacent column and row of the exposure areas are perpendicular to each other.

[0014] Optionally, in the exposure method, the preset path includes exposure column by column, and the exposure scanning directions of the exposure areas corresponding to all columns are the same.

[0015] Optionally, in the exposure method, the preset path includes row-by-row exposure, and the exposure scanning directions of the exposure areas corresponding to all rows are the same.

[0016] Optionally, in the exposure method, the process of exposing each exposure area includes:

[0017] The mask in the photolithography machine and the corresponding exposure area in the wafer are respectively located at their respective initial positions;

[0018] The mask in the photolithography machine moves toward the wafer so as to use the mask to synchronously scan and expose the corresponding exposure area.

[0019] Optionally, in the exposure method, the two opposite sides of the exposure lens include a first side and a second side; and in the initial position, the mask is located on the first side, and the corresponding exposure area in the wafer is located on the second side; and

[0020] During the exposure process, the mask moves from the first side to the second side; at the same time, the corresponding exposure area in the wafer moves from the second side to the first side.

[0021] Optionally, in the exposure method, after exposing one exposure area, the mask moves in the opposite direction to the first side; the wafer moves according to the preset path so that the next exposure area moves to the second side to perform exposure on the next exposure area.

[0022] Based on the same inventive concept, the present invention also provides a semiconductor device manufactured using the exposure method.

[0023] In summary, the present invention provides an exposure method and semiconductor device. Compared to the prior art, the exposure method maintains the same exposure scanning direction for the exposure areas in the same row or column during the exposure process. Therefore, during the exposure process, the exposure scanning direction can only be changed after the exposure of a row or column of exposure areas is completed. This effectively reduces the number of operations required for the wafer carrier to move the wafer in an arc. This not only saves exposure time and improves exposure efficiency, but also effectively reduces leakage of immersion fluid from the exposure lens caused by the wafer carrier moving the wafer, alleviates pattern exposure defects, and helps improve lithography quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Those skilled in the art will appreciate that the drawings are provided for a better understanding of the present invention, but do not constitute any limitation on the scope of the present invention.

[0025] Figure 1 It is a schematic diagram of the exposure path in the prior art.

[0026] Figure 2 yes Figure 1 A partial enlarged schematic diagram of area A in the middle.

[0027] Figure 3 4 is a flow chart of an exposure method in an embodiment of the present invention.

[0028] Figure 4 Schematic diagram of a serpentine preset path in an embodiment of the present invention.

[0029] Figures 5 to 9 2 is a schematic diagram of a process of exposing an exposure area in an embodiment of the present invention.

[0030] Figure 10 Schematic diagram of a preset U-shaped path in an embodiment of the present invention.

[0031] Figure 11 Schematic diagram of a preset path for scanning row by row in the positive half-axis direction of the Y-axis in an embodiment of the present invention.

[0032] Figure 12 Schematic diagram of a preset path for scanning row by row in the negative half-axis direction of the Y-axis in an embodiment of the present invention.

[0033] And, in the accompanying drawings:

[0034] 10-wafer; 100-exposure area;

[0035] 20-wafer; 200-exposure area; 200a-first exposure area; 200b-second exposure area; 200c-third exposure area; 200d-fourth exposure area; 200e-fifth exposure area; 200f-sixth exposure area;

[0036] 300-mask; 301-light shielding frame;

[0037] 400-exposure lens; 400a-first side; 400b-second side;

[0038] S1-scan upward; S2-scan downward; V1-first direction; V2-second direction; R-illumination. DETAILED DESCRIPTION

[0039] In order to make the objects, advantages and features of the present invention clearer, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments. It should be noted that the drawings are all in a very simplified form and are not drawn to scale, and are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention. In addition, the structure shown in the drawings is often a part of the actual structure. In particular, the emphasis required to be shown in each drawing is different, and sometimes different scales are used. It should also be understood that, unless otherwise specified or indicated, the terms "first", "second", "third" and the like in the specification are only used to distinguish between the various components, elements, steps, etc. in the specification, and are not used to represent the logical relationship or sequential relationship between the various components, elements, steps, etc. In addition, the X-axis direction, Y-axis direction and Z-axis direction referred to in the specification of this application are three directions perpendicular to each other in three-dimensional space.

[0040] See also Figure 3 , this embodiment provides an exposure method, including:

[0041] Step 1 S10: providing a wafer, wherein the surface of the wafer is divided into a plurality of exposure areas distributed in an array;

[0042] Step 2 S20: using a photolithography machine to expose each exposure area one by one along a preset path; wherein the preset path includes row-by-row and / or column-by-column exposure, and the exposure scanning direction of the exposure areas in the same row or column is the same.

[0043] Among them, the exposure method provided in this embodiment has the same exposure scanning direction for the exposure areas in the same row or column during the exposure process. Therefore, during the exposure process, the exposure scanning direction can only be changed after the exposure of a row or a column of exposure areas is completed, which effectively reduces the number of operations of the wafer carrier driving the wafer to perform arc motion, not only saving exposure time and improving exposure efficiency, but also effectively reducing the leakage of the exposure lens immersion liquid caused by the movement of the wafer driven by the wafer carrier, alleviating the problem of graphic exposure defects, and helping to improve the quality of photolithography.

[0044] The following is combined with Figures 3 to 12 The exposure method provided in this embodiment is described in detail.

[0045] Specifically, the exposure method includes:

[0046] Step 1 S10: Please refer to Figure 4 , providing a wafer 20, wherein the surface of the wafer 20 is divided into a plurality of exposure areas 200 distributed in an array.

[0047] It should be noted that the exposure areas 200 on the wafer 20 are divided according to certain rules, generally in a grid shape of the same size, and each exposure scan is performed on the entire exposure area 200 .

[0048] Before performing the exposure process, photoresist needs to be coated on the surface of the wafer 20. After coating, the wafer 20 needs to be soft-baked to remove the solvent in the photoresist, solidify the photoresist, improve its adhesion, and enhance the photosensitivity of the photoresist.

[0049] Step 2 S20: Please refer to Figures 4 to 12 , a photolithography machine is used to expose each exposure area 200 one by one along a preset path; wherein the preset path includes row-by-row and / or column-by-column exposure, and the exposure scanning direction of the exposure areas 200 in the same row or column is the same.

[0050] Preferably, the exposure method used in this embodiment is a synchronous scanning exposure method to improve exposure efficiency. Figures 5 to 9As shown, the photolithography machine includes an illumination system, a mask plate 300, an exposure lens 400, and a wafer carrier. The mask plate 300 is arranged on the carrier above the exposure lens 400, and a light shielding frame 301 is arranged around it to accurately define the exposure area and optimize the precision control of the photolithography process. The wafer 20 is located on the wafer carrier and below the exposure lens 400. The light R provided by the illumination system passes through the mask plate 300 and the exposure lens 400 in sequence, and can be irradiated on the surface of the wafer 200, so that the pattern on the mask plate 300 can be transferred to the photoresist on the wafer 200.

[0051] See also Figure 5 Before synchronous scanning and exposing an exposure area 200, the mask 300 and the corresponding exposure area 200 on the wafer 20 are located at their respective initial positions. In these initial positions, the mask 300 and the corresponding exposure area 200 are located on opposite sides of the exposure lens 400 in the lithography machine. In other words, in the X-axis direction, the two opposite sides of the exposure lens 400 include a first side 400a and a second side 400b. The initial position of the mask 300 corresponds to the side corresponding to the first side 400a; the initial position of the exposure area 200 corresponds to the side corresponding to the second side 400b.

[0052] See also Figures 6 to 9 , when exposure starts, the mask plate 300 in the photolithography machine moves toward the wafer 20 so that the mask plate 300 synchronously scans and exposes the corresponding exposure area 200. The mask plate 300 and the corresponding carrier platform of the wafer 20 can move along three degrees of freedom. Therefore, during the exposure process, the mask plate 300 moves along the first direction V1; that is, from the first side 400a of the exposure lens 400 to the second side 400b. The exposure area 200 moves along the second direction V2; that is, from the second side 400b of the exposure lens 400 to the first side 400a. As Figure 6 As shown, when the mask 300 moves to the irradiation position corresponding to the light R, the light R enters the exposure lens 400 through the light-transmitting area of ​​the mask 300, and then is incident on the corresponding exposure area 200 from the exposure lens 400. At the same time, part of the exposure area 200 moves into the exposure area corresponding to the exposure lens 400 to achieve exposure.

[0053] Further, such as Figure 7As shown, as the mask 300 moves, more and more light R will pass through the mask 300 and enter the exposure lens 400. Similarly, based on the synchronous movement of the exposure area 200, more and more areas of the exposure area 200 enter the exposure area corresponding to the exposure lens 400, thereby receiving the light R and achieving exposure. And when the mask 300 is fully exposed to the light R, the area of ​​the exposed area in the exposure area 200 reaches the maximum value. It should be noted that this embodiment does not limit the specific movement speed of the mask 300 and the wafer 20. Depending on the different movement distances, the speeds of the two can be the same or different, but it is necessary to ensure that the pattern on the mask 300 can be effectively transferred to the exposure area 200.

[0054] like Figure 8 As shown, as the mask 300 and the wafer 20 continue to move, the area on the mask 300 that the light R can pass through gradually shrinks. Similarly, the area on the exposure area 200 that receives the light R also shrinks until the mask 300 and the wafer 20 move to Figure 9 That is, the mask plate 300 is located on the side corresponding to the second side 400b, and the exposure area 200 is located on the side corresponding to the first side 400a. Figure 9 When the exposure scan is completed for each exposure area 200, the mask 300 moves and returns to the corresponding initial position. Specifically, the mask 300 moves back to the first side 400a. Accordingly, the wafer 200 moves along the preset path, moving the next exposure area 200 to the second side 400b. Exposure is then performed on the next exposure area 200 according to the aforementioned process until all exposure areas 200 are exposed.

[0055] From the above, it can be seen that during the exposure process, the mask plate 300 and the exposure area 200 move toward each other. Compared with the exposure scanning method of moving the mask plate 300 or the exposure area 200 separately, the synchronous scanning exposure method provided in this embodiment has a faster movement speed and higher exposure efficiency.

[0056] Furthermore, the preset path provided in this embodiment includes row-by-row and / or column-by-column exposure, and the exposure scanning direction of the exposure areas 200 in the same row or column is the same. In other words, the lithography machine may change the exposure scanning direction only after completing the exposure of a row or column of the exposure areas 200.

[0057] In one example, if Figure 4As shown, the preset path includes a serpentine path. During the exposure process, the photolithography machine exposes each of the exposure areas 200 column by column, and the exposure scanning directions of the exposure areas 200 in adjacent columns are opposite. Alternatively, the photolithography machine exposes each of the exposure areas 200 row by row, and the exposure scanning directions of the exposure areas 200 in adjacent rows are opposite. It should be noted that the columns referred to in this embodiment are the directions of the Y axis, and the rows referred to are the directions of the X axis; and opposite directions refer to two coaxial directions, for example: the positive semi-axis direction of the Y axis and the negative semi-axis direction of the Y axis, or the positive semi-axis direction of the X axis and the negative semi-axis direction of the X axis.

[0058] For example, if the first exposure area 200a located at the edge of the wafer 20 is the initial exposure area, then after performing an exposure scan in the positive Y-axis direction on the first exposure area 200a, an exposure scan in the positive Y-axis direction is performed on the exposure areas 200 in the same column adjacent to the first exposure area 200a. Similarly, exposure scans in the positive Y-axis direction are performed on each of the adjacent exposure areas 200 in the same column until the exposure scan of the last exposure area 200 in the column is completed. After the exposure scan of the last exposure area 200 in the column is completed, the wafer stage drives the wafer 200 to perform an arc motion, allowing the lithography machine to continue performing the exposure process on the exposure areas 200 in the next adjacent column one by one. However, the exposure scan directions of the exposure areas 200 in the adjacent columns are opposite, namely, the negative Y-axis direction. By analogy, after each exposure scan of a row of the exposure area 200 is completed, the wafer supporting platform will drive the wafer 200 to perform an arc motion to perform an exposure process for the next row using the opposite exposure scanning direction.

[0059] above Figure 4 The example is based on column-by-column exposure. For row-by-row exposure, refer to the above exposure process. Based on this, compared with the prior art that requires rotating and changing the exposure scanning direction after each exposure, the preset path provided by this embodiment significantly reduces the number of operations in which the wafer carrier drives the wafer 200 to perform arc motion. This not only saves exposure time and improves exposure efficiency, but also effectively reduces the leakage of immersion liquid from the exposure lens 400 caused by the movement of the wafer 200 driven by the wafer carrier, alleviates the problem of pattern exposure defects, and is conducive to improving lithography quality.

[0060] In another example, Figure 10As shown, the preset path includes a U-shaped path. The U-shaped path includes multiple circles of U-shaped paths nested in sequence, and during the exposure process, each exposure area 200 is exposed circle by circle from the inside to the outside or from the outside to the inside. During the exposure process, after the photolithography machine exposes a column of exposure areas 200, it then exposes an adjacent row of exposure areas 200; and after the photolithography machine exposes a row of exposure areas 200, it then exposes an adjacent column of exposure areas 200; and the exposure scanning directions of the adjacent columns and rows of exposure areas 200 are perpendicular to each other.

[0061] Specifically, taking the exposure of the outermost circle of exposure zones 200 as an example, the first exposure zone 200a located at the edge of the wafer 20 is the initial exposure zone, and the column in which the first exposure zone 200a is located belongs to the outermost circle of the U-shaped path. After performing an exposure scan in the positive Y-axis direction on the first exposure zone 200a, an exposure scan in the positive Y-axis direction is performed on each exposure zone 200 in the same column as the first exposure zone 200a one by one, until the exposure scan of the last exposure zone 200 in the column is completed. After completing the exposure scan of the last exposure zone 200 in the column, the wafer carrier drives the wafer 200 to perform an arc motion to adjust the exposure scan direction to the positive X-axis direction.

[0062] The exposure area adjacent to the last exposure area 200 in the row where the first exposure area 200a is located is recorded as the second exposure area 200b. The second exposure area 200b is also close to the edge of the wafer 20. The row where the second exposure area 200b is located belongs to the outermost circle of the U-shaped path. The photolithography machine performs an exposure scan in the positive X-axis direction on the second exposure area 200b, and then performs an exposure scan in the positive X-axis direction on each exposure area 200 in the same row as the second exposure area 200b. After completing the exposure scan of the last exposure area 200 in the row, the wafer carrier drives the wafer 200 to perform an arc movement to adjust the exposure scan direction to the negative Y-axis direction.

[0063] The exposure area adjacent to the last exposure area 200 in the row where the second exposure area 200b is located is recorded as the third exposure area 200c. The third exposure area 200c is close to the edge of the wafer 20, and the column where the third exposure area 200c is located belongs to the outermost circle of the U-shaped path. The photolithography machine performs an exposure scan in the negative Y-axis direction on the third exposure area 200c. Subsequently, an exposure scan in the negative Y-axis direction is performed on each exposure area 200 in the same column as the third exposure area 200c. After completing the exposure scan of the last exposure area 200 in the row, the wafer carrier drives the wafer 200 to perform an arc movement to adjust the exposure scan direction to the negative X-axis direction.

[0064] The exposure area adjacent to the last exposure area 200 in the column where the third exposure area 200c is located is recorded as the fourth exposure area 200d. The fourth exposure area 200d is close to the edge of the wafer 20, and the row where the fourth exposure area 200d is located belongs to the outermost circle of the U-shaped path. In addition, the photolithography machine performs an exposure scan in the negative semi-axis direction of the X-axis on the fourth exposure area 200d, and then performs an exposure scan in the negative semi-axis direction of the X-axis on each of the exposure areas 200 that belong to the same row as the fourth exposure area 200d. After completing the exposure scan of the last exposure area 200 in the row, the exposure of the outermost circle of the U-shaped path is completed. Subsequently, the position of the wafer 20 is adjusted so that the exposure area of ​​the photolithography machine corresponds to the exposure area 200 of the inner circle connected to the outermost circle; that is, Figure 10 The fifth exposure zone 200e is shown as a circle. Simultaneously, the wafer carrier also drives the wafer 200 to perform an arc motion to adjust the exposure scanning direction to the positive Y-axis direction, and performs exposure on the column where the fifth exposure zone 200e is located. The exposure process for each inner circle can be referred to the exposure process for the outermost circle, and will not be described in detail in this embodiment.

[0065] Based on this, performing exposure scanning in a U-shaped path can also reduce the number of operations in which the wafer carrier drives the wafer 200 to perform arc motion, save exposure time, improve exposure efficiency, and effectively reduce graphic exposure defects, which is conducive to improving lithography quality.

[0066] In order to further improve the exposure efficiency and alleviate the exposure defect problem, this embodiment also provides an example. Figure 11 and Figure 12As shown, the preset path includes row-by-row exposure, and the exposure scanning direction of the exposure zones 200 corresponding to all rows is the same. For example, if the first exposure zone 200a located at the edge of the wafer 20 is the initial exposure zone, then after performing an exposure scan in the positive Y-axis direction on the first exposure zone 200a, an exposure scan in the positive Y-axis direction is performed on the exposure zones 200 in the same row adjacent to the first exposure zone 200a. After completing the exposure scan of the last exposure zone 200 in the row, the exposure scanning direction of the lithography machine remains unchanged. Instead, the wafer stage moves the wafer 200 to the starting exposure zone 200 in another row adjacent to the row containing the first exposure zone 200a, designated as the sixth exposure zone 200f in this embodiment. Subsequently, an exposure scan in the positive Y-axis direction is performed on the sixth exposure zone 200f, and then exposure scans in the positive Y-axis direction are performed on each exposure zone 200 in the same row adjacent to the sixth exposure zone 200f. By analogy, the exposure scanning of all the exposure areas 200 is completed one by one. Optionally, the exposure scanning direction can also be Figure 12 The negative half-axis direction of the Y axis is shown.

[0067] Based on this, the preset path can also be row-by-row exposure, and the exposure scanning direction of the exposure area 200 corresponding to all rows is the same. Among them, the row-by-row exposure method can refer to the above-mentioned column-by-column exposure process, and this embodiment will not be described in detail here.

[0068] From the above, it can be seen that compared with the above-mentioned serpentine and U-shaped exposure paths, the row-by-row or column-by-column exposure path does not require adjustment of the exposure scanning direction, which can further save exposure time on the basis of the previous examples, improve exposure efficiency, reduce graphic exposure defects, and improve lithography quality.

[0069] Based on the same concept, this embodiment further provides a semiconductor device, which is manufactured using the above-mentioned exposure method and has better photolithography quality.

[0070] In summary, this embodiment provides an exposure method and semiconductor device. During the exposure process, the exposure scanning direction of the exposure areas 200 in the same row or column is the same. Therefore, during the exposure process, the exposure scanning direction can be changed only after the exposure of a row or column of exposure areas 200 is completed. This effectively reduces the number of operations required for the wafer carrier to drive the wafer 20 to perform arc motion. This not only saves exposure time and improves exposure efficiency, but also effectively reduces leakage of immersion fluid in the exposure lens caused by the movement of the wafer carrier driven by the wafer 200, alleviates pattern exposure defects, and contributes to improved lithography quality.

[0071] Furthermore, it should be recognized that although the present invention has been disclosed above with reference to preferred embodiments, the above embodiments are not intended to limit the present invention. Any person skilled in the art can utilize the above disclosed technical content to make many possible changes and modifications to the technical solution of the present invention, or modify it into equivalent embodiments with equivalent variations, without departing from the scope of the technical solution of the present invention. Therefore, any simple modifications, equivalent variations, and modifications made to the above embodiments based on the technical essence of the present invention, without departing from the content of the technical solution of the present invention, shall still fall within the scope of protection of the technical solution of the present invention.

Claims

1. An exposure method, characterized in that: include: Providing a wafer, wherein the surface of the wafer is divided into a plurality of exposure areas distributed in an array; A photolithography machine is used to expose each exposure area one by one along a preset path; wherein the preset path includes row-by-row and / or column-by-column exposure, and the exposure scanning direction of the exposure areas in the same row or column is the same.

2. The exposure method according to claim 1, wherein The preset path includes a serpentine path; wherein, during the exposure process: The photolithography machine exposes each of the exposure areas column by column, and the exposure scanning directions of the exposure areas in adjacent columns are opposite; or, the photolithography machine exposes each of the exposure areas row by row, and the exposure scanning directions of the exposure areas in adjacent rows are opposite.

3. The exposure method according to claim 1, wherein The preset path includes a U-shaped path; the U-shaped path includes multiple circles of U-shaped paths nested in sequence, and during the exposure process, each exposure area is exposed circle by circle from inside to outside or from outside to inside.

4. The exposure method according to claim 3, wherein: During the exposure of the exposure areas distributed in a circle: After the photolithography machine exposes a column of the exposure areas, it exposes an adjacent row of the exposure areas; and after the photolithography machine exposes a row of the exposure areas, it exposes an adjacent column of the exposure areas; and the exposure scanning directions of the adjacent column and row of the exposure areas are perpendicular to each other.

5. The exposure method according to claim 1, wherein The preset path includes exposure column by column, and the exposure scanning directions of the exposure areas corresponding to all columns are the same.

6. The exposure method according to claim 1, wherein The preset path includes row-by-row exposure, and the exposure scanning directions of the exposure areas corresponding to all rows are the same.

7. The exposure method according to any one of claims 1 to 6, wherein: The process of exposing each exposure area includes: The mask in the photolithography machine and the corresponding exposure area in the wafer are respectively located at their respective initial positions; The mask in the photolithography machine moves toward the wafer so as to use the mask to synchronously scan and expose the corresponding exposure area.

8. The exposure method according to claim 7, wherein: The two opposite sides of the exposure lens include a first side and a second side; and in the initial position, the mask is located on the first side, and the corresponding exposure area in the wafer is located on the second side; and During the exposure process, the mask moves from the first side to the second side; at the same time, the corresponding exposure area in the wafer moves from the second side to the first side.

9. The exposure method according to claim 8, wherein: After exposing one exposure area, the mask moves in the opposite direction to the first side; the wafer moves according to the preset path so that the next exposure area moves to the second side to perform exposure on the next exposure area.

10. A semiconductor device, characterized in that: The exposure method is prepared by any one of claims 1 to 9.

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