Large-area nanometer photoetching module, device and method

Abstract

The invention provides a large-area nanometer photoetching module, a large-area nanometer photoetching device and a large-area nanometer photoetching method. The photoetching module comprises a focus detection alignment system and a large-area focus control and alignment deviation correction module, the focus detection alignment system is used for measuring focal plane information G and position deviation information P; and the large-area focus control and alignment deviation correction module comprises a wafer bearing table and a deformation regulation and control module F. The photoetching module can be compatible with masks and wafers with different layout sizes, a large-area exposure system, a focus detection alignment system and the masks are adopted, and exposure of the whole wafer can be completed only through one-time focus control, alignment and exposure; a large-area mask is adopted, and the exposure of the whole wafer can be completed through scanning exposure only by performing focus control and alignment once; by increasing the layout area and reducing the number of times of separation, stepping, focus control, alignment and exposure, stepping exposure of the whole wafer is realized by moving the wafer.

Description

Technical Field

[0001] The present invention relates to the field of lithography devices, and in particular to a large-area nanolithography module, device and method. Background Art

[0002] Conventional projection lithography requires a complex, high-resolution objective lens system, and its exposure field size is limited. For example, the current exposure field area of ​​193nm projection lithography objectives is only 26mm x 8mm, but scanning can expand this to 26mm x 33mm.

[0003] On the other hand, some existing lithography methods can achieve large-area exposure fields, but the resolution is limited, such as contact and proximity lithography.

[0004] By introducing resolution-enhancing structures, such as metalenses, it is possible to achieve both large-area and high-resolution performance. As a super-resolution imaging structure, metalenses can break through the traditional resolution limit and exhibit the optical axis-free imaging characteristic of flat panels. This eliminates the image quality differences between exposure positions near and far from the optical axis. Theoretically, resolution is decoupled from field of view, enabling an infinite imaging field of view. Leveraging this characteristic, a large-area nanolithography method and apparatus can be realized.

[0005] With the development of nanolithography, its exposure resolution has reached the tens-nanometer level, meeting the processing requirements of advanced chip manufacturing processes. However, nanolithography using metalenses also has its own shortcomings, such as a short working distance. This requires the mask and wafer to be focused, aligned, and exposed field by field during the lithography process, which greatly reduces the productivity of nanolithography equipment. Summary of the Invention

[0006] In response to the above issues, the present invention provides a large-area nanolithography module, apparatus, and method. A single lithography apparatus can be used with masks and wafers of varying layout sizes, supporting three exposure modes. Alternatively, the apparatus can be configured to operate in only a single exposure mode, depending on the size of the mask and wafer.

[0007] When the mask pattern used is the same area as the wafer, and is also identical to the illumination area of ​​the lithography apparatus's light source system and the focus detection and alignment detection area of ​​the focus detection and alignment system, a single focus control, alignment, and exposure operation is all that's needed to complete the entire wafer exposure. During the entire wafer exposure process, the positions of the light source system and the workpiece stage system remain unchanged, eliminating the need for a long-stroke workpiece stage. If the lithography apparatus only performs a one-time exposure function, the lack of a long-stroke workpiece stage offers the advantage of a simpler structure. In this case, the entire wafer can be exposed with a single wafer loading operation, resulting in fewer lithography apparatus component movements, shorter processing times, and higher processing yields.

[0008] During scanning exposure, the workpiece stage system remains stationary. After a single focus control and alignment, the light source system and focus detection and alignment system scan the entire wafer to complete the exposure. Prior to exposure, focus control and alignment are performed only once, resulting in higher processing efficiency compared to performing focus control and alignment for each field. Furthermore, increasing the scanning speed of the light source system and focus detection and alignment system can further improve product yield. Because the light source system has a small illumination area, it is easier to increase power density when the light source system has limited power. During a single field exposure, the light source system only illuminates a small area on the wafer, reducing the thermal impact of the illumination on the wafer.

[0009] In the case of repeated stepping, the single exposure area is 2-10 standard exposure fields, which is much larger than traditional lithography equipment. Although focus control and alignment are required field by field, this can reduce the focus control and alignment workload or the number of exposure fields, thereby improving lithography productivity. By appropriately reducing the illumination area, the thermal impact of the light source system on the mask and wafer can be reduced.

[0010] According to a first aspect of the present invention, a large-area nanolithography module is provided, comprising: a focus detection and alignment system and a large-area focus control and alignment deviation correction module; wherein the focus detection and alignment system is disposed above the mask and is used to measure focal plane information G and position deviation information P;

[0011] The large-area focus control and alignment deviation correction module includes a wafer stage and a deformation control module F. The wafer stage is relatively located below the focus detection and alignment system, and an area array control module H is installed on the wafer stage. The area array control module H can iteratively control the wafer surface fluctuation state based on the focal plane information G until it matches the mask surface fluctuation state.

[0012] The deformation control module F is arranged around the mask and is used to clamp the mask. The deformation control module F can automatically adjust the clamping force around the mask according to the position deviation information P, and then adjust the lateral deformation of the mask until the position deviation information P between the mask and the wafer meets the alignment deviation requirements.

[0013] According to an embodiment of the present invention, the large-area nanolithography module further includes an array light source module L, which emits light to illuminate the mask or wafer, causing thermal deformation of both, thereby correcting the focal plane information G and position deviation information P.

[0014] A second aspect of the present invention provides a large-area nanolithography apparatus, comprising:

[0015] The large-area nanolithography module, vibration-damping foundation, vibration isolation frame, workpiece stage system, position monitoring system, light source system, mask system, transmission system, environmental control system, and control system as described above;

[0016] Among them, the vibration-damping foundation is used for vibration control to provide a stable operating environment for the lithography equipment;

[0017] The vibration isolation frame is installed on the vibration reduction foundation to cooperate with the vibration reduction foundation for vibration control. It is also used to install the large-area nanolithography module, workpiece stage system, position monitoring system, light source system, mask system, and transmission system.

[0018] The workpiece stage system is installed on the lower base plate of the vibration isolation frame and is used for wafer position movement and posture adjustment. The wafer stage of the large-area nanolithography module is installed above the workpiece stage system.

[0019] The position monitoring system, mask system, and deformation control module F of the large-area nanolithography module are installed on the middle baseplate of the vibration isolation frame. The position monitoring system is used to monitor the relative position relationship between the wafer and the mask in real time and provide feedback to the control system for closed-loop control of the wafer and mask positions. The mask system is used to load the mask in an inverted position.

[0020] The light source system and the focus detection and alignment system of the large-area nanolithography module are mounted on the upper base plate of the vibration isolation frame. The illumination area of ​​the light source system is the same as the focus detection and alignment detection area of ​​the focus detection and alignment system. The light source system is used to provide ultraviolet light for the exposure process.

[0021] The transport system is installed on a vibration-damping foundation and includes a mask transport system and a wafer transport system, which are used to realize automatic loading and unloading of wafers and masks;

[0022] The environmental control system and control system are installed on a foundation outside the vibration-damping foundation. The environmental control system isolates the lithography device from the external environment and can adjust the temperature, humidity, and cleanliness; the control system provides signal acquisition and processing, hardware feedback control, and status display for the entire device.

[0023] According to an embodiment of the present invention, the workpiece stage system includes a six-axis coarse motion stage and a six-axis fine motion stage, wherein the six-axis coarse motion stage is mounted on the lower base plate of the vibration isolation frame; the six-axis fine motion stage is mounted on the six-axis coarse motion stage; and the wafer stage is mounted on the six-axis fine motion stage.

[0024] According to an embodiment of the present invention, the mask system includes a suction cup mounting plate and a mask suction cup, wherein the suction cup mounting plate is mounted on the middle base plate of the vibration isolation frame; the mask suction cup is mounted on the suction cup mounting plate, and the mask is loaded upside down on the mask suction cup; a hollow portion is provided in the middle of the suction cup mounting plate and the mask suction cup for the passage of illumination light emitted by the light source system and detection light of the focusing alignment system.

[0025] According to an embodiment of the present invention, the light source system and the focus detection and alignment system are both mounted on a coarse motion stage of the lens group, and the coarse motion stage of the lens group is mounted on an upper base plate of the vibration isolation frame;

[0026] The coarse motion stage of the mirror group is a two-axis translation stage in at least the XY plane;

[0027] The focus detection signal acquisition module and the alignment signal acquisition module of the focus detection and alignment system share the focus detection and alignment optical lens group;

[0028] The light source system and the focus detection and alignment system combine their optical paths through a dichroic mirror, so that the light emitted by the light source system and the focus detection and alignment system is irradiated onto the mask and the wafer.

[0029] A third aspect of the present invention provides a lithography method, using the large-area nanolithography apparatus described above to perform the following operations:

[0030] The control system gives the lithography device a one-time exposure instruction; the transmission system loads the wafer onto the wafer stage and the mask onto the mask system;

[0031] The position monitoring system monitors the relative position relationship between the wafer and the mask. When the relative position relationship between the wafer and the mask does not meet the first preset requirement, the control system adjusts the position and posture of the wafer by controlling the workpiece stage system until the relative position relationship between the wafer and the mask meets the first preset requirement.

[0032] The large-area nanolithography module measures the focal plane information G and position deviation information P through the focus detection and alignment system. When the focal plane information G and the position deviation information P do not meet the second preset requirement, the control system adjusts the wafer surface fluctuation state through the area array control module H; the deformation control module F adjusts the lateral deformation of the mask until the focal plane information G and the position deviation information P meet the second preset requirement.

[0033] Turn on the light source system to complete exposure;

[0034] The workpiece stage system and large-area nanolithography module are reset to their initial state. The transmission system unloads the exposed wafer and reloads another wafer before proceeding to the next round of operations.

[0035] A fourth aspect of the present invention provides a lithography method, using the large-area nanolithography apparatus described above to perform the following operations:

[0036] The control system gives the lithography device scanning and exposure instructions; the transmission system loads the wafer onto the wafer stage and the mask onto the mask system;

[0037] The position monitoring system monitors the relative position relationship between the wafer and the mask. When the relative position relationship between the wafer and the mask does not meet the first preset requirement, the control system adjusts the position and posture of the wafer by controlling the workpiece stage system until the relative position relationship between the wafer and the mask meets the first preset requirement.

[0038] The large-area nanolithography module measures the focal plane information G and position deviation information P through the focus detection and alignment system. When the focal plane information G and the position deviation information P do not meet the second preset requirement, the control system adjusts the wafer surface fluctuation state through the area array control module H; the deformation control module F adjusts the lateral deformation of the mask until the focal plane information G and the position deviation information P meet the second preset requirement.

[0039] Turn on the light source system to complete exposure;

[0040] The coarse motion stage of the lens group drives the light source system and the focus detection and alignment system to move to the next exposure position, and the light source system is turned on for exposure until the exposure of the entire wafer is completed;

[0041] The workpiece stage system, the coarse motion stage of the mirror group, and the large-area nanolithography module are reset to their initial states. The transmission system unloads the exposed wafer and reloads another wafer before proceeding to the next round of operations.

[0042] A fifth aspect of the present invention provides a lithography method, using the large-area nanolithography apparatus described above to perform the following operations:

[0043] The control system gives the lithography device repeated stepping and exposure instructions; the transmission system loads the wafer onto the wafer stage and the mask onto the mask system;

[0044] The position monitoring system monitors the relative position relationship between the wafer and the mask. When the relative position relationship between the wafer and the mask does not meet the first preset requirement, the control system adjusts the position and posture of the wafer by controlling the workpiece stage system until the relative position relationship between the wafer and the mask meets the first preset requirement.

[0045] The large-area nanolithography module measures the focal plane information G and position deviation information P through the focus detection and alignment system. When the focal plane information G and the position deviation information P do not meet the second preset requirement, the control system adjusts the wafer surface fluctuation state through the area array control module H; the deformation control module F adjusts the lateral deformation of the mask until the focal plane information G and the position deviation information P meet the second preset requirement.

[0046] Turn on the light source system to complete exposure;

[0047] The coarse motion stage of the lens group drives the light source system and the focus detection and alignment system. The mask system drives the mask to move to the next exposure position, and the light source system is turned on for exposure until the exposure of the entire wafer is completed.

[0048] The workpiece stage system, mirror group coarse movement stage, mask system, and large-area nanolithography module are reset to their initial states. The transmission system unloads the exposed wafer and reloads another wafer before proceeding to the next round of operations.

[0049] The present invention has the following beneficial effects:

[0050] The large-area nanolithography module, device, and method provided by the present invention utilize a focus detection and alignment system to precisely measure the gap and horizontal position deviation between the mask and wafer. The surface undulation of the wafer is then adjusted using an array control module, while the deformation control module adjusts the lateral deformation of the mask. The same device can accommodate masks and wafers of varying layout areas, and a single exposure mode can be employed, effectively increasing the productivity of nanolithography equipment. In particular, the one-shot exposure method requires only a single focus control and alignment operation prior to exposure to meet subsequent exposure requirements for the entire wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0051] The above contents and other objects, features and advantages of the present invention will become more apparent through the following description of the embodiments of the present invention with reference to the accompanying drawings, in which:

[0052] Figure 1 Schematically shows a schematic diagram of the imaging principle of a superlens according to an embodiment of the present invention;

[0053] Figure 2 A schematic diagram of a large-area nanolithography module according to an embodiment of the present invention is shown;

[0054] Figure 3 A schematic diagram of a large-area nanolithography device according to an embodiment of the present invention is shown;

[0055] Figure 4 Schematically shows a schematic diagram of a workpiece stage system according to an embodiment of the present invention;

[0056] Figure 5 Schematically shows a schematic diagram of a mask system according to an embodiment of the present invention;

[0057] Figure 6 A schematic diagram of a light source system and a focus detection and alignment system according to an embodiment of the present invention is shown;

[0058] Figure 7 A schematic diagram of a common optical path of a light source system and a focus detection and alignment system according to an embodiment of the present invention is shown;

[0059] Figure 8 A flowchart of a one-time exposure method for a lithography apparatus according to an embodiment of the present invention is schematically shown;

[0060] Figure 9 A schematic diagram of a one-time exposure method according to an embodiment of the present invention is schematically shown;

[0061] Figure 10 A flowchart schematically illustrates a scanning exposure method for a lithography apparatus according to an embodiment of the present invention;

[0062] Figure 11 A schematic diagram schematically shows a scanning exposure method according to an embodiment of the present invention;

[0063] Figure 12 A flowchart of a repeated stepping exposure method for a lithography apparatus according to an embodiment of the present invention is schematically shown;

[0064] Figure 13 A schematic diagram of a repeated stepping exposure method according to an embodiment of the present invention is schematically shown;

[0065] Figure 14 A schematic diagram of a mask used in a repeated stepping exposure method according to an embodiment of the present invention is shown;

[0066] Figure 15 A schematic diagram showing a comparison of exposure fields between a conventional projection exposure method and a repeated stepping exposure method according to an embodiment of the present invention is shown. DETAILED DESCRIPTION

[0067] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the present invention. In the following detailed description, for ease of explanation, many specific details are set forth to provide a comprehensive understanding of embodiments of the present invention. However, it is apparent that one or more embodiments may also be implemented without these specific details. In addition, in the following description, descriptions of known structures and technologies are omitted to avoid unnecessary confusion of the concept of the present invention.

[0068] The terms used herein are only for describing specific embodiments and are not intended to limit the present invention. The terms "comprise", "include", etc. used herein indicate the presence of the features, steps, operations and / or components, but do not exclude the presence or addition of one or more other features, steps, operations or components.

[0069] All terms used herein (including technical and scientific terms) have the meanings commonly understood by those skilled in the art unless otherwise defined. It should be noted that the terms used herein should be interpreted as having a meaning consistent with the context of this specification and should not be interpreted in an idealized or overly rigid manner.

[0070] When expressions such as "at least one of A, B, and C, etc." are used, they should generally be interpreted in accordance with the meaning commonly understood by those skilled in the art (for example, "a system having at least one of A, B, and C" should include but is not limited to a system having A alone, B alone, C alone, A and B, A and C, B and C, and / or A, B, C, etc.).

[0071] In the technical solution of the present invention, the acquisition, collection, storage, use, processing, transmission, provision, disclosure and application of data comply with the provisions of relevant laws and regulations, take necessary confidentiality measures, and do not violate public order and good morals.

[0072] Figure 1 The figure schematically shows the principle of superlens imaging according to an embodiment of the present invention.

[0073] like Figure 1 As shown in the figure, the imaging system based on the principle of superlens (nanolithography) includes UV illuminator A, mask B, superlens imaging structure C, photoresist D, and wafer E. UV illuminator A is the exposure light source; mask B is processed with the layout pattern and alignment and focus detection marks; under UV irradiation, superlens imaging structure C excites the short-wavelength properties of surface plasmons, which can break the diffraction limit of resolution; photoresist D records the layout information after exposure; both superlens imaging structure C and photoresist D are processed on wafer E. After the layout pattern is etched and transferred to wafer E, the superlens imaging structure C and photoresist D are removed from wafer E.

[0074] Figure 2 The diagram of a large-area nanolithography module according to an embodiment of the present invention is schematically shown.

[0075] like Figure 2 As shown, to increase the single exposure area of ​​nanolithography, it is necessary to strictly control the focus plane fluctuation and the alignment deviation between the mask and the wafer before the single exposure. To meet the focus plane fluctuation and alignment deviation control requirements of large-area nanolithography, the lithography module on the lithography apparatus includes a focus detection and alignment system 6 and a large-area focus control and alignment deviation correction module. The focus detection and alignment system 6 is arranged above the mask 7-3 and is used to measure the focus plane information G and position deviation information P. The focus plane information G is the gap detection value between the mask 7-3 and the wafer 3-4, and the position deviation information P is the alignment deviation detection value between the mask 7-3 and the wafer 3-4.

[0076] The large-area focus control and alignment deviation correction module includes a wafer stage 3-3 and a deformation control module F. The wafer stage 3-3 is relatively arranged below the focus detection and alignment system 6. There is an array control module H on the wafer stage 3-3. The array control module H can iteratively control the surface undulation state of the wafer 3-4 according to the focal plane information G for multiple times until it is consistent with the surface undulation state of the mask 7-3.

[0077] The deformation control module F is arranged around the mask 7-3 and is used to clamp the mask 7-3. The deformation control module F will automatically adjust the clamping force around the mask 7-3 according to the position deviation information P, and then adjust the lateral deformation of the mask 7-3 until the position deviation information P between the mask 7-3 and the wafer 3-4 meets the alignment deviation requirements.

[0078] When the focus and alignment detection area of ​​the focus and alignment system 6, the mask area, and the wafer area are the same, the lithography requirements of the entire wafer can be met by performing focus control and alignment only once before a single exposure.

[0079] The large-area nanolithography module accurately measures the gap value and horizontal position deviation (alignment deviation) between the mask and the wafer through the focus detection and alignment system 6, and then adjusts the surface undulation of the wafer through the array control module H; the deformation control module F adjusts the lateral deformation of the mask. When using different exposure methods, only a small amount of focus control and alignment operations before exposure are required to meet the subsequent exposure needs of the entire wafer, effectively improving the productivity of the nanolithography equipment.

[0080] The large-area focus control and alignment deviation correction module can also use an array light source module L to emit light to illuminate the mask 7-3 or wafer 3-4, causing thermal deformation of both, thereby correcting the focal plane information G and position deviation information P. The large-area focus control and alignment deviation correction module can include only the wafer stage 3-3 with the array control module H and the deformation control module F, or only the array light source module L. It can also include the array light source module L, the wafer stage 3-3, and the deformation control module F.

[0081] Figure 3 The diagram of a large-area nanolithography device according to an embodiment of the present invention is schematically shown.

[0082] like Figure 3 As shown, the large-area nanolithography device includes a large-area nanolithography module, a vibration-damping foundation 1, a vibration isolation frame 2, a workpiece stage system 3, a position monitoring system 4, a light source system 5, a focus detection and alignment system 6, a mask system 7, a transmission system 8, an environmental control system 9 and a control system 10.

[0083] The vibration-damping foundation 1 is used for vibration control, providing a stable operating environment for the large-area nanolithography apparatus. The vibration isolation frame 2 is mounted on the vibration-damping foundation 1 to coordinate with the vibration-damping foundation 1 for vibration control. It is also used to mount the large-area nanolithography module, the workpiece stage system 3, the position monitoring system 4, the light source system 5, the focus detection and alignment system 6, the mask system 7, and the transmission system 8.

[0084] The workpiece stage system 3 is installed on the lower substrate of the vibration isolation frame 2 and is used for position movement and posture adjustment of the wafer 3-4. The wafer stage 3-3 of the large-area nanolithography module is installed above the workpiece stage system 3.

[0085] The position monitoring system 4, mask system 7, and deformation control module F of the large-area nanolithography module are mounted on the middle baseplate of the vibration isolation frame 2. The position monitoring system 4 is used to monitor the relative position of the wafer 3-4 and mask 7-3 in real time and provide feedback to the control system 10 for closed-loop control of the position of the wafer 3-4 and mask 7-3. The mask system 7 is used to load the mask 7-3 in an inverted position.

[0086] The light source system 5 and the focus detection and alignment system 6 of the large-area nanolithography module are mounted on the upper substrate of the vibration isolation frame 2. The illumination area of ​​the light source system 5 is the same as the focus detection and alignment detection area of ​​the focus detection and alignment system 6. The light source system 5 is used to provide ultraviolet light for the exposure process.

[0087] The transport system 8 is installed on the vibration-damping foundation 1 and includes a mask transport system and a wafer transport system for realizing automatic loading and unloading of the wafer 3 - 4 and the mask 7 - 3 .

[0088] Environmental control system 9 and control system 10 are installed on a foundation separate from vibration-damping foundation 1. Environmental control system 9 isolates the lithography apparatus from the external environment and regulates temperature, humidity, and cleanliness. Control system 10 provides signal acquisition and processing, hardware feedback control, and status display for the entire apparatus.

[0089] This lithography system utilizes a large-area nanolithography module, requiring only minimal focus control, alignment, and exposure to complete the entire wafer exposure process. Furthermore, a control system 10 collects operational and detection data from various systems, enabling automated and stable operation of the lithography system through subsystems such as the workpiece stage system 3, mask system 7, and transport system 8.

[0090] Figure 4 A schematic diagram of a workpiece stage system according to an embodiment of the present invention is shown schematically.

[0091] like Figure 4 As shown, the workpiece stage system 3 includes a six-axis coarse motion stage 3-1 and a six-axis fine motion stage 3-2, wherein the six-axis coarse motion stage 3-1 is mounted on the lower substrate of the vibration isolation frame 2; the six-axis fine motion stage 3-2 is mounted on the six-axis coarse motion stage 3-1; the wafer stage 3-3 is mounted on the six-axis fine motion stage 3-2; when the workpiece stage system 3 is working, the wafer 3-4 is loaded on the wafer stage 3-3, and the imaging structure C and photoresist D are processed on the wafer 3-4.

[0092] The wafer stage 3-3 can be compatible with loading 4-inch, 8-inch, 12-inch or other sized wafers 3-4, and can also be adapted to wafers 3-4 of different sizes by replacing wafer stages 3-3 of different sizes.

[0093] The workpiece stage system, combining the six-axis coarse motion stage 3-1 and the six-axis fine motion stage 3-2, enables high-precision positioning and posture adjustment over a long travel range for wafers. The position monitoring system 4 provides real-time feedback on the relative position of the wafer 3-4 and the mask 7-3 to the control system 10, which then sends commands to the six-axis coarse motion stage 3-1 and the six-axis fine motion stage 3-2 for closed-loop control of the wafer 3-4's position.

[0094] Figure 5 The figure schematically shows a mask system according to an embodiment of the present invention.

[0095] like Figure 5 As shown, the mask system 7 includes a suction cup mounting plate 7-1 and a mask suction cup 7-2. The suction cup mounting plate 7-1 is mounted on the middle base plate of the vibration isolation frame 2. The mask suction cup 7-2 is mounted on the suction cup mounting plate 7-1, and the mask 7-3 is mounted in an inverted position on the mask suction cup 7-2. Both the suction cup mounting plate 7-1 and the mask suction cup 7-2 have a hollow portion in the middle to allow the illumination light from the light source system 5 and the detection light from the focus alignment system 6 to pass through.

[0096] The mask 7-3 is machined with detection marks for pattern and focus alignment on the surface opposite to the wafer 3-4. The pattern area of ​​the mask 7-3 can be set according to the single exposure area. If the lithography apparatus adopts a one-time exposure, that is, only one focus control, alignment, and exposure are required to complete the entire wafer exposure, then the illumination area of ​​the light source system 5, the focus alignment detection area of ​​the focus alignment system 6, and the pattern area of ​​the mask 7-3 are all consistent with the size of the wafer 3-4. If the lithography apparatus adopts a scanning exposure, that is, only one focus control and alignment are required, but the light source system 5 and the focus alignment system 6 must be moved to perform scanning exposure on the entire wafer. In this case, the illumination area of ​​the light source system 5 and the focus alignment detection area of ​​the focus alignment system 6 are smaller than the area of ​​the wafer 3-4, and the pattern area of ​​the mask 7-3 is consistent with the area of ​​the wafer 3-4. If the lithography device adopts repeated stepping exposure, that is, multiple separation, stepping, focus control, alignment and exposure, the entire wafer exposure can be completed. At this time, the area of ​​the mask 7-3 layout is smaller than the area of ​​the wafer 3-4, and the lighting area of ​​the light source system 5 and the focus detection area of ​​the focus alignment system 6 are the same as the area of ​​the mask 7-3 layout. Compared with the traditional stepping exposure method, the number of steps is reduced by increasing the area of ​​the mask 7-3 layout.

[0097] Figure 6 The diagram schematically shows a light source system and a focus detection and alignment system according to an embodiment of the present invention. Figure 7 The common optical path diagram of the light source system and the focus detection and alignment system according to an embodiment of the present invention is schematically shown.

[0098] like Figure 6As shown, the illumination area of ​​the light source system 5 is consistent with the focus detection area of ​​the focus detection system 6. The light source system 5 and the focus detection system 6 are both mounted on the lens group coarse movement stage 5-1, which is mounted on the upper base plate of the vibration isolation frame 2.

[0099] The coarse lens movement stage 5-1 is a two-axis translation stage in at least the XY plane. The coarse lens movement stage 5-1 is mainly used to move the light source system 5 and the focus alignment system 6 when the lithography apparatus adopts scanning exposure to perform large-area wafer scanning exposure.

[0100] like Figure 7 As shown, the focus signal acquisition module 6-1 and the alignment signal acquisition module 6-2 of the focus detection and alignment system 6 share the focus detection and alignment optical lens group; the light source system 5 and the focus detection and alignment system 6 merge the optical paths through the dichroic mirror 5-2, so that the light emitted by the light source system 5 and the focus detection and alignment system 6 is irradiated to the mask 7-3 and the wafer 3-4.

[0101] The lithography apparatus provided by the present invention can expose an entire wafer in a single or multiple exposures. A single lithography apparatus can be used with masks and wafers of varying layout sizes, supporting three exposure modes. Furthermore, the apparatus can be configured to operate with masks and wafers of specific sizes, enabling it to operate in only specific exposure modes. The three exposure modes that can be operated on this lithography apparatus will be described in detail later.

[0102] When the area of ​​the adopted mask layout is the same as the wafer area, and is the same as the illumination area of ​​the light source system 5 of the lithography apparatus and the focus detection and alignment area of ​​the focus detection and alignment system 6, only one focus control, alignment and exposure are required to complete the exposure of the entire wafer. When the area of ​​the adopted mask layout is the same as the wafer area, and is larger than the illumination area of ​​the light source system 5 of the lithography apparatus and the focus detection and alignment area of ​​the focus detection and alignment system 6, the light source system 5 and the focus detection and alignment system 6 can be moved to perform scanning exposure on the entire wafer, and only one focus control and alignment are required to complete the scanning exposure of the entire wafer. When the area of ​​the adopted mask layout is smaller than the wafer area, and the maximum area of ​​the mask layout is the same as the illumination area of ​​the light source system 5 of the lithography apparatus and the focus detection and alignment area of ​​the focus detection and alignment system 6, stepping exposure can be performed by moving the wafer; by increasing the layout area, the number of separation, stepping, focus control, alignment and exposure is reduced, and stepping exposure of the entire wafer is achieved, effectively improving the productivity of nanolithography equipment.

[0103] Based on the above large area nanolithography device, the present invention also provides a large area nanolithography method. Figures 8 to 15 The photolithography method is described in detail.

[0104] Figure 8 The flowchart of the one-shot exposure method of the lithography apparatus according to the embodiment of the present invention is schematically shown. Figure 9The figure schematically shows a one-time exposure method according to an embodiment of the present invention.

[0105] like Figure 8 As shown, when the mask area, wafer area, illumination area of ​​the light source system 5 of the lithography apparatus and focus detection area of ​​the focus detection system 6 are the same, the one-time exposure method of the lithography apparatus includes operations S810 to S830.

[0106] In operation S810 , the control system 10 gives a one-time exposure instruction to the photolithography apparatus;

[0107] In operation S820, after the wafer and the mask arrive at the exposure position, focus control, alignment, and exposure are performed once;

[0108] In operation S830 , after the exposure is completed, the photolithography apparatus is reset.

[0109] Specifically, operation S820 further includes:

[0110] In operation S821 , the transport system 8 loads the wafer 3 - 4 onto the wafer stage 3 - 3 and the mask onto the mask system 7 ;

[0111] In operation S822, the position monitoring system 4 monitors the relative position relationship between the wafer 3-4 and the mask 7-3. When the relative position relationship between the wafer 3-4 and the mask 7-3 does not meet the first preset requirement, the control system 10 adjusts the position and posture of the wafer 3-4 by controlling the workpiece stage system 3 until the relative position relationship between the wafer 3-4 and the mask 7-3 meets the first preset requirement.

[0112] In operation S823, the large-area nanolithography module measures the focal plane information G and the position deviation information P through the focus detection and alignment system 6. When the focal plane information G and the position deviation information P do not meet the second preset requirement, the control system 10 adjusts the wafer surface shape fluctuation state through the area array control module H; and the deformation control module F adjusts the lateral deformation of the mask until the focal plane information G and the position deviation information P meet the second preset requirement.

[0113] In operation S824, the light source system 5 is turned on to complete the exposure.

[0114] After the exposure is completed, the lithography device is reset, specifically:

[0115] In operation S831, the workpiece stage system 3 and the large-area nanolithography module are reset to the initial state, and the transmission system 8 unloads the exposed wafer 3-4 and reloads another wafer 3-4 to proceed to the next round of operation or stop working.

[0116] If the next wafer needs to be processed, the control system 10 will issue an instruction to reload a new wafer. If the next wafer is no longer to be processed, the control system 10 will issue an instruction to stop all subsystems and the lithography device will enter a standby state.

[0117] like Figure 9 As shown, during the one-time exposure process, the illumination area of ​​the light source system 5, the detection area of ​​the focus detection and alignment system 6, the layout area of ​​the mask 7-3 and the area of ​​the wafer 3-4 are the same. Only one focus control and alignment are required to adjust the mask 7-3 and the wafer 3-4 to have the same surface undulation state. In the subsequent exposure process, the layout transfer of the entire wafer can be completed at one time.

[0118] When the lithography system uses one-shot exposure mode, since the wafer does not need to be moved during the exposure process, a long-stroke worktable is not required. This further simplifies the structure of the lithography system and reduces the vibration typically introduced by a long-stroke worktable, thereby increasing the stability of the lithography system. Furthermore, the entire wafer can be exposed in a single loading operation, resulting in fewer lithography system component movements, shorter processing times, and higher processing yields.

[0119] Figure 10 The flowchart of the scanning exposure method of the lithography apparatus according to the embodiment of the present invention is schematically shown. Figure 11 The figure schematically shows a scanning exposure method according to an embodiment of the present invention.

[0120] like Figure 10 As shown, when the mask pattern area and wafer area used are larger than the illumination area of ​​the light source system 5 of the lithography apparatus and the focus detection area of ​​the focus detection system 6, the scanning exposure method of the lithography apparatus includes operations S910 to S930.

[0121] In operation S910 , the control system 10 gives a scanning exposure instruction to the lithography apparatus;

[0122] In operation S920, after the wafer and the mask arrive at the exposure position, focus control and alignment are performed once, the light source system 5 and the focus detection and alignment system 6 are moved, and the wafer is scanned and exposed;

[0123] In operation S930 , after the entire wafer is exposed, the photolithography apparatus is reset.

[0124] Specifically, operation S920 further includes:

[0125] In operation S921 , the transport system 8 loads the wafer 3 - 4 onto the wafer stage 3 - 3 and the mask onto the mask system 7 ;

[0126] In operation S922, the position monitoring system 4 monitors the relative position relationship between the wafer 3-4 and the mask 7-3. When the relative position relationship between the wafer 3-4 and the mask 7-3 does not meet the first preset requirement, the control system 10 adjusts the position and posture of the wafer 3-4 by controlling the workpiece stage system 3 until the relative position relationship between the wafer 3-4 and the mask 7-3 meets the first preset requirement.

[0127] In operation S923, the large-area nanolithography module measures the focal plane information G and the position deviation information P through the focus detection and alignment system 6. When the focal plane information G and the position deviation information P do not meet the second preset requirement, the control system 10 adjusts the wafer surface shape fluctuation state through the area array control module H; and the deformation control module F adjusts the lateral deformation of the mask until the focal plane information G and the position deviation information P meet the second preset requirement.

[0128] In operation S924, the light source system 5 is turned on to complete the exposure;

[0129] In operation S925 , the coarse movement stage 5 - 1 drives the light source system 5 and the focus alignment system 6 to move to the next exposure position, and the light source system 5 is turned on for exposure until the exposure of the entire wafer is completed.

[0130] After the exposure is completed, the lithography device is reset, specifically:

[0131] In operation S931, the workpiece stage system 3, the coarse motion stage 5-1, and the large-area nanolithography module are reset to the initial state. The transport system 8 unloads the exposed wafer 3-4 and then reloads another wafer 3-4 to proceed to the next round of operation or stop working.

[0132] If the next wafer needs to be processed, the control system 10 will issue an instruction to reload a new wafer. If the next wafer is no longer to be processed, the control system 10 will issue an instruction to stop all subsystems and the lithography device will enter a standby state.

[0133] like Figure 11 As shown, during the scanning exposure process, the illumination area of ​​the light source system 5 and the detection area of ​​the focus detection and alignment system 6 are smaller than the layout area of ​​the mask 7-3 and the area of ​​the wafer 3-4. Only one focus control and alignment is required to adjust the mask 7-3 and the wafer 3-4 to have consistent surface undulations. However, since the illumination area is smaller than the mask and wafer areas, the light source system 5 and the focus detection and alignment system 6 need to be moved multiple times to complete the layout transfer of the entire wafer.

[0134] During scanning exposure, the lithography device can complete the exposure of the entire wafer by scanning the entire wafer through the light source system and focus detection and alignment system after a single focus control and alignment. Before exposure, only one focus control and alignment is performed, which has higher processing efficiency compared to focusing and aligning in each field. On this basis, increasing the scanning speed of the light source system and focus detection and alignment system can further improve product yield. When using the same wafer, compared with the lithography device with one-time exposure, the scanning exposure device has a smaller illumination area of ​​the light source system. When the power of the light source system is limited, it is easier to increase the power density. The light source system only illuminates a small area on the wafer during single-field exposure, thereby reducing the thermal impact of the illumination on the wafer.

[0135] Figure 12 The flowchart of the repeated stepping exposure method of the lithography apparatus according to the embodiment of the present invention is schematically shown. Figure 13 The following is a schematic diagram of a repeated stepping exposure method according to an embodiment of the present invention.

[0136] like Figure 12 As shown, when the area of ​​the mask layout used is smaller than the wafer area and the maximum area of ​​the mask layout is equal to the illumination area of ​​the light source system 5 and the focus detection area of ​​the focus detection system 6, the repeated stepping exposure method of the lithography device includes operations S1010 to S1030.

[0137] In operation S1010 , the control system 10 gives a lithography apparatus a repeated stepping and exposure instruction;

[0138] In operation S1020, after the wafer and the mask arrive at the exposure position, focus control, alignment, and exposure are performed field by field;

[0139] In operation S1030 , after the exposure is completed, the photolithography apparatus is reset.

[0140] Specifically, operation S1020 further includes:

[0141] In operation S1021 , the transport system 8 loads the wafer 3 - 4 onto the wafer stage 3 - 3 and the mask onto the mask system 7 ;

[0142] In operation S1022, the position monitoring system 4 monitors the relative position relationship between the wafer 3-4 and the mask 7-3. When the relative position relationship between the wafer 3-4 and the mask 7-3 does not meet the first preset requirement, the control system 10 adjusts the position and posture of the wafer 3-4 by controlling the workpiece stage system 3 until the relative position relationship between the wafer 3-4 and the mask 7-3 meets the first preset requirement.

[0143] In operation S1023, the large-area nanolithography module measures the focal plane information G and the position deviation information P through the focus detection and alignment system 6. When the focal plane information G and the position deviation information P do not meet the second preset requirement, the control system 10 adjusts the wafer surface undulation state through the area array control module H; and the deformation control module F adjusts the lateral deformation of the mask until the focal plane information G and the position deviation information P meet the second preset requirement.

[0144] In operation S1025, the light source system 5 is turned on to complete exposure;

[0145] In operation S1026 , the coarse movement stage 5 - 1 drives the light source system 5 and the focus alignment system 6 , and the mask system 7 drives the mask to move to the next exposure position, and the light source system 5 is turned on for exposure until the exposure of the entire wafer is completed.

[0146] After the exposure is completed, the lithography device is reset, specifically:

[0147] In operation S1031, the workpiece stage system 3, the coarse movement stage 5-1, the mask system 7, and the large-area nanolithography module are reset to the initial state. The transmission system 8 unloads the exposed wafer 3-4 and reloads another wafer 3-4 to proceed to the next round of operation or stop working.

[0148] If the next wafer needs to be processed, the control system 10 will issue an instruction to reload a new wafer. If the next wafer is no longer to be processed, the control system 10 will issue an instruction to stop all subsystems and the lithography device will enter a standby state.

[0149] like Figure 13 As shown, during the scanning exposure process, the illumination area of ​​the light source system 5, the detection area of ​​the focus detection and alignment system 6, and the layout area of ​​the mask 7-3 are smaller than the area of ​​the wafers 3-4. Multiple separation, stepping, focus control, alignment, and exposure steps are required to complete the exposure of the entire wafer. However, because the layout area of ​​the mask 7-3 is larger than that of traditional projection lithography, the layout area can be increased to match the illumination area of ​​the light source system 5 and the detection area of ​​the focus detection and alignment system 6. Therefore, the number of stepping steps is less than that of traditional projection lithography, which can improve lithography productivity.

[0150] When using the same wafer, compared with a one-time exposure lithography device, by appropriately reducing the illumination area, the thermal impact of the light source system on the mask and wafer can be reduced, and the difficulty of focus control and alignment operations can be reduced.

[0151] Example:

[0152] Taking a 12-inch wafer as an example, the repeated stepping exposure method is described. Figure 14As shown, the layout area of ​​the mask used is 9×26mm×33mm (the conventional mask layout area is 26mm×33mm)

[0153] In operation S1, the control system 10 gives the lithography apparatus a repeated stepping and exposure instruction; the transport system 8 loads the wafer 3-4 onto the wafer stage 3-3 and the mask 7-3 onto the mask system 7;

[0154] In operation S2, the position monitoring system 4 monitors the relative position relationship between the wafer 3-4 and the mask 7-3. When the relative position relationship between the wafer 3-4 and the mask 7-3 does not meet the first preset requirement, the control system 10 adjusts the position and posture of the wafer 3-4 by controlling the workpiece stage system 3 until the relative position relationship between the wafer 3-4 and the mask 7-3 meets the first preset requirement.

[0155] In operation S3, the large-area nanolithography module measures the focal plane information G and the position deviation information P through the focus detection and alignment system 6. When the focal plane information G and the position deviation information P do not meet the second preset requirement, the control system 10 adjusts the wafer surface shape fluctuation state through the area array control module H; and the deformation control module F adjusts the lateral deformation of the mask until the focal plane information G and the position deviation information P meet the second preset requirement.

[0156] In operation S4, the light source system 5 is turned on to complete the exposure;

[0157] In operation S5, the coarse motion stage 5-1 drives the light source system 5, the focus detection and alignment system 6, and the mask system 7 drives the mask to move to the next exposure position, and the light source system 5 is turned on for exposure until the exposure of the entire wafer is completed; Figure 15 As shown, for a 12-inch wafer, the lithography apparatus in this embodiment only needs to step 12 fields, which can significantly improve the processing speed compared to the traditional projection lithography which needs to step 96 fields.

[0158] In operation S6, the workpiece stage system 3, the coarse motion stage 5-1, the mask system 7, and the large-area nanolithography module are reset to their initial states. The transport system 8 unloads the exposed wafer 3-4 and reloads another wafer 3-4 to proceed with the next round of operations.

[0159] Those skilled in the art will appreciate that various combinations and / or combinations of features described in the various embodiments and / or claims of the present invention may be made, even if such combinations and / or combinations are not explicitly described in the present invention. In particular, various combinations and / or combinations of features described in the various embodiments and / or claims of the present invention may be made, without departing from the spirit and teachings of the present invention. All such combinations and / or combinations fall within the scope of the present invention.

[0160] The above describes embodiments of the present invention. However, these embodiments are for illustrative purposes only and are not intended to limit the scope of the present invention. Although each embodiment has been described separately above, this does not mean that the measures in each embodiment cannot be advantageously used in combination. The scope of the present invention is defined by the appended claims and their equivalents. Without departing from the scope of the present invention, those skilled in the art may make various substitutions and modifications, which are intended to fall within the scope of the present invention.

Claims

1. A large-area nanolithography module, characterized in that: include: Focus detection and alignment system (6) and large area focus control and alignment deviation correction module; The focus detection and alignment system (6) is arranged above the mask (7-3) and is used to measure the focal plane information G and the position deviation information P; The large-area focus control and alignment deviation correction module includes a wafer stage (3-3) and a deformation control module F; the wafer stage (3-3) is relatively arranged below the focus detection and alignment system (6), and a surface array control module H is provided on the wafer stage (3-3); the surface array control module H can iteratively control the surface undulation state of the wafer (3-4) multiple times according to the focal plane information G until it is consistent with the surface undulation state of the mask (7-3); The deformation control module F is arranged around the mask (7-3) and is used to clamp the mask (7-3). The deformation control module F can automatically adjust the clamping force around the mask (7-3) according to the position deviation information P, thereby regulating the lateral deformation of the mask (7-3) until the position deviation information P meets the alignment deviation requirement.

2. The large-area nanolithography module according to claim 1, characterized in that: The photolithography module also includes a planar array light source module L, which emits light to illuminate the mask (7-3) or the wafer (3-4), causing thermal deformation of both, thereby correcting the focal plane information G and the position deviation information P.

3. A large-area nanolithography device, characterized in that: include: A large-area nanolithography module according to any one of claims 1 to 2, a vibration-damping foundation (1), a vibration-isolating frame (2), a workpiece stage system (3), a position monitoring system (4), a light source system (5), a focus detection and alignment system (6), a mask system (7), a transmission system (8), an environmental control system (9), and a control system (10); The vibration-damping foundation (1) is used for vibration control, providing a stable operating environment for the photolithography device; The vibration isolation frame (2) is mounted on the vibration reduction base (1) and is used to cooperate with the vibration reduction base (1) for vibration control, and is also used to install the large-area nano-lithography module, the workpiece stage system (3), the position monitoring system (4), the light source system (5), the focus detection and alignment system (6), the mask system (7), and the transmission system (8); The workpiece stage system (3) is mounted on the lower substrate of the vibration isolation frame (2) and is used for position movement and posture adjustment of the wafer (3-4); the wafer stage (3-3) of the large-area nanolithography module is mounted above the workpiece stage system (3); The position monitoring system (4), the mask system (7) and the deformation control module F of the large-area nanolithography module are mounted on the middle base plate of the vibration isolation frame (2); the position monitoring system (4) is used to monitor the relative position relationship between the wafer (3-4) and the mask (7-3) in real time, and to feed back to the control system (10) for closed-loop control of the position of the wafer (3-4) and the mask (7-3); the mask system (7) is used to load the mask (7-3) in an inverted manner; The light source system (5) and the focus detection and alignment system (6) of the large-area nanolithography module are mounted on the upper substrate of the vibration isolation frame (2); the illumination area of ​​the light source system (5) is the same as the focus detection and alignment detection area of ​​the focus detection and alignment system (6); the light source system (5) is used to provide ultraviolet light for the exposure process; The transmission system (8) is installed on the vibration-damping foundation (1), and includes a mask transmission system and a wafer transmission system, and is used to realize automatic loading and unloading of wafers (3-4) and masks (7-3); The environmental control system (9) and the control system (10) are installed on a foundation outside the vibration-damping foundation (1), and the control system (10) provides signal acquisition and processing, hardware feedback control, and status display.

4. The large-area nanolithography apparatus according to claim 3, characterized in that: The workpiece stage system (3) comprises a six-axis coarse motion stage (3-1) and a six-axis fine motion stage (3-2), wherein the six-axis coarse motion stage (3-1) is mounted on the lower base plate of the vibration isolation frame (2); the six-axis fine motion stage (3-2) is mounted on the six-axis coarse motion stage (3-1); and the wafer stage (3-3) is mounted on the six-axis fine motion stage (3-2).

5. The large-area nanolithography apparatus according to claim 3, characterized in that: The mask system (7) comprises a suction cup mounting plate (7-1) and a mask suction cup (7-2), wherein the suction cup mounting plate (7-1) is mounted on the middle base plate of the vibration isolation frame (2); the mask suction cup (7-2) is mounted on the suction cup mounting plate (7-1), and the mask (7-3) is invertedly loaded on the mask suction cup (7-2); a hollow portion is provided in the middle of the suction cup mounting plate (7-1) and the mask suction cup (7-2) for the transmission of illumination light emitted by the light source system (5) and detection light of the focus detection and alignment system (6).

6. The large-area nanolithography apparatus according to claim 3, characterized in that: The light source system (5) and the focus detection and alignment system (6) are both mounted on a lens group coarse motion stage (5-1), and the lens group coarse motion stage (5-1) is mounted on an upper base plate of the vibration isolation frame (2); The mirror group coarse motion stage (5-1) is a two-axis displacement stage in at least the XY plane; The focus detection signal acquisition module (6-1) and the alignment signal acquisition module (6-2) of the focus detection and alignment system (6) share a focus detection and alignment optical lens assembly; The light source system (5) and the focus detection and alignment system (6) combine their light paths via a dichroic mirror (5-2).

7. A large-area nanolithography method, characterized in that: The large-area nanolithography apparatus according to any one of claims 3 to 6 is used to perform the following operations: The control system (10) gives a large-area nanolithography device a one-time exposure instruction; After the wafer and mask arrive at the exposure position, focus control, alignment and exposure are performed once; After exposure is completed, the lithography apparatus is reset.

8. The large-area nanolithography method according to claim 7, characterized in that: After the wafer and mask arrive at the exposure position, focus control, alignment, and exposure are performed, including: The transfer system (8) loads the wafer (3-4) onto the wafer stage (3-3) and loads the mask onto the mask system (7); The position monitoring system (4) monitors the relative position relationship between the wafer (3-4) and the mask (7-3); when the relative position relationship between the wafer (3-4) and the mask (7-3) does not meet a first preset requirement, the control system (10) adjusts the position and posture of the wafer (3-4) by controlling the workpiece stage system (3) until the relative position relationship between the wafer (3-4) and the mask (7-3) meets the first preset requirement; The large-area nanolithography module measures the focal plane information G and the position deviation information P through the focus detection and alignment system (6). When the focal plane information G and the position deviation information P do not meet the second preset requirement, the control system (10) adjusts the wafer surface fluctuation state through the array control module H; the deformation control module F adjusts the lateral deformation of the mask until the focal plane information G and the position deviation information P meet the second preset requirement. Turn on the light source system (5) to complete the exposure.

9. The large-area nanolithography method according to claim 7, characterized in that: After the exposure is completed, the lithography apparatus is reset, including: The workpiece stage system (3) and the large-area nanolithography module are reset to their initial states, and the transmission system (8) unloads the exposed wafer (3-4) and then reloads another wafer (3-4) to proceed to the next round of operation or stop working.

10. A large-area nanolithography method, characterized in that: The large-area nanolithography apparatus according to any one of claims 3 to 6 is used to perform the following operations: The control system (10) provides a large-area nanolithography device with a scanning exposure instruction; After the wafer and the mask arrive at the exposure position, focus control and alignment are performed, and the light source system (5) and the focus detection and alignment system (6) are moved to perform scanning exposure on the wafer; After the entire wafer is exposed, the large-area nanolithography device is reset.

11. The large-area nanolithography method according to claim 10, characterized in that: After the wafer and the mask arrive at the exposure position, focus control and alignment are performed, and the light source system (5) and the focus detection and alignment system (6) are moved to perform scanning exposure on the wafer, including: The transfer system (8) loads the wafer (3-4) onto the wafer stage (3-3) and loads the mask onto the mask system (7); The position monitoring system (4) monitors the relative position relationship between the wafer (3-4) and the mask (7-3); when the relative position relationship between the wafer (3-4) and the mask (7-3) does not meet a first preset requirement, the control system (10) adjusts the position and posture of the wafer (3-4) by controlling the workpiece stage system (3) until the relative position relationship between the wafer (3-4) and the mask (7-3) meets the first preset requirement; The large-area nanolithography module measures the focal plane information G and the position deviation information P through the focus detection and alignment system (6). When the focal plane information G and the position deviation information P do not meet the second preset requirement, the control system (10) adjusts the wafer surface fluctuation state through the array control module H; the deformation control module F adjusts the lateral deformation of the mask until the focal plane information G and the position deviation information P meet the second preset requirement. Turn on the light source system (5) to complete the exposure; The lens group coarse motion stage (5-1) drives the light source system (5) and the focus detection and alignment system (6) to move to the next exposure position, and the light source system (5) is turned on for exposure until the exposure of the entire wafer is completed.

12. The large-area nanolithography method according to claim 10, characterized in that: After the exposure is completed, the lithography apparatus is reset, including: The workpiece stage system (3), the mirror group coarse motion stage (5-1), and the large-area nanolithography module are reset to the initial state, and the transmission system (8) unloads the exposed wafer (3-4) and reloads another wafer (3-4) before performing the next round of operation or stopping the operation.

13. A large-area nanolithography method, characterized in that: The large-area nanolithography apparatus according to any one of claims 3 to 6 is used to perform the following operations: The control system (10) gives a photolithography device a repeated step exposure instruction; After the wafer (3-4) and mask (7-3) arrive at the exposure position, focus control, alignment and exposure are performed field by field; After exposure is completed, the lithography apparatus is reset.

14. The large-area nanolithography method according to claim 13, characterized in that: After the wafer (3-4) and the mask (7-3) arrive at the exposure position, focus control, alignment, and exposure are performed field by field, including: The transfer system (8) loads the wafer (3-4) onto the wafer stage (3-3) and loads the mask onto the mask system (7); The position monitoring system (4) monitors the relative position relationship between the wafer (3-4) and the mask (7-3); when the relative position relationship between the wafer (3-4) and the mask (7-3) does not meet a first preset requirement, the control system (10) adjusts the position and posture of the wafer (3-4) by controlling the workpiece stage system (3) until the relative position relationship between the wafer (3-4) and the mask (7-3) meets the first preset requirement; The large-area nanolithography module measures the focal plane information G and the position deviation information P through the focus detection and alignment system (6). When the focal plane information G and the position deviation information P do not meet the second preset requirement, the control system (10) adjusts the wafer surface fluctuation state through the array control module H; the deformation control module F adjusts the lateral deformation of the mask until the focal plane information G and the position deviation information P meet the second preset requirement. Turn on the light source system (5) to complete the exposure; The lens group coarse motion stage (5-1) drives the light source system (5) and the focus detection and alignment system (6), and the mask system (7) drives the mask to move to the next exposure position, and the light source system (5) is turned on for exposure until the exposure of the entire wafer is completed.

15. The large-area nanolithography method according to claim 13, characterized in that: After the exposure is completed, the lithography apparatus is reset, including: The workpiece stage system (3), the mirror group coarse motion stage (5-1), the mask system (7), and the large-area nanolithography module are reset to the initial state. The transmission system (8) unloads the exposed wafer (3-4) and reloads another wafer (3-4) before performing the next round of operation or stopping the operation.

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