Electronic equipment, electronic device and manufacturing method thereof

Abstract

The embodiment of the invention discloses electronic equipment, an electronic device and a manufacturing method of the electronic device, relates to the technical field of diamonds, and solves the problem that the bonding force of a growth interface is poor when a semiconductor heterogeneous material forms a film, so that the film is easy to release and lose efficacy. The electronic device comprises a buffer layer, a passivation layer, a diamond layer and a semiconductor device layer. The buffer layer is provided with a first surface and a second surface which are oppositely arranged. A plurality of recessed structures are formed on the first surface. The passivation layer covers the first surface of the buffer layer and fills partial depth of the plurality of recessed structures. The semiconductor device layer is stacked on the second surface of the buffer layer. The semiconductor device layer may have one or more semiconductor devices. The diamond layer is arranged on the surface of the side, away from the buffer layer, of the passivation layer in a stacked mode and can fill the remaining depths of the multiple concave structures.

Description

Technical Field

[0001] The present application relates to the field of diamond technology, and in particular to an electronic device, an electronic component and a manufacturing method thereof. Background Art

[0002] Thermal management is becoming a performance bottleneck for high-power semiconductor chip applications. Diamond, with the highest thermal conductivity of any bulk material in nature, can be used to improve thermal management in semiconductor chips. Diamond can be deposited onto heterogeneous semiconductor substrates through a coating process.

[0003] Since the lattice and thermal expansion coefficient of diamond are quite different from those of heterogeneous materials, and the temperature of diamond coating growth is very high (usually 600-1200°C), the stress at the growth interface between the heterogeneous material and diamond after growth is very large, which can easily cause the diamond film to fall off or even break. In particular, the problem of diamond coating growth stress failure is more serious on large-scale heterogeneous materials. In addition, during the nucleation process of diamond coating, hydrogen plasma (H + ) can cause etching damage to the surface of certain heterogeneous materials. After diamond growth, cavities form at the growth interface, resulting in poor bonding strength and easy diamond film shedding. This can especially lead to diamond film removal failure during diamond grinding and polishing processes. Summary of the Invention

[0004] The present application provides an electronic device, an electronic component and a manufacturing method thereof, which solves the problem of easy film release failure caused by poor bonding strength at the growth interface of existing diamonds when forming films on semiconductor heterogeneous materials.

[0005] To achieve the above objectives, this application adopts the following technical solutions:

[0006] In a first aspect, an embodiment of the present application provides an electronic device. The electronic device may be a chip, or various discrete semiconductor devices, etc. The electronic device includes a buffer layer, a passivation layer, a diamond layer, and a semiconductor device layer. The buffer layer has a first surface and a second surface arranged opposite to each other. A plurality of recessed structures are formed on the first surface. The passivation layer covers the first surface of the buffer layer and fills a portion of the depth of the plurality of recessed structures. The plurality of recessed structures on the first surface are not fully filled. The semiconductor device layer is stacked on the second surface of the buffer layer. The semiconductor device layer may have one or more semiconductor devices. The diamond layer is stacked on a surface of the passivation layer away from the buffer layer and can fill the remaining depth of the plurality of recessed structures.

[0007] Compared to directly forming the above-mentioned multiple recessed structures on the passivation layer (such as performing a roughening treatment on the passivation layer to form multiple recessed structures), because the buffer layer is usually thicker than the passivation layer, forming multiple recessed structures on the buffer layer can obtain a rougher surface morphology or recessed pattern. That is, the first surface of the buffer layer can form a deeper recessed structure, so that the area of ​​the outer surface of the first surface of the buffer layer is larger. The passivation layer fills part of the depth of the multiple recessed structures, that is, the thickness of the passivation layer is less than the depth of the recessed structure. The surface area of ​​the passivation layer also increases, and the bonding force between the passivation layer and the buffer layer, as well as the bonding force between the diamond layer and the passivation layer are stronger. In addition, since the direction of the interface stress between the diamond layer and the passivation layer changes with the surface recessed structure, its interface stress is decomposed into local smaller stresses in different directions, so that the stress between the diamond layer and the passivation layer is smaller. When manufacturing the above-mentioned electronic devices, the warping of the wafer is smaller, which is beneficial to the subsequent tape-out process. In addition, because the diamond layer is filled in the recessed structure, the distance between the diamond layer and the semiconductor device is shortened, making the diamond layer closer to the hot spot of the semiconductor device, resulting in better heat dissipation effect and improving the heat dissipation performance of the electronic device.

[0008] Furthermore, in some embodiments of the present application, the material of the partial area of ​​the passivation layer connected to the diamond layer is polysilicon. Alternatively, the material of the entire passivation layer is polysilicon. Polysilicon has high thermal conductivity and can slow down the hydrogen plasma (H + ) damage to the passivation layer, reducing the formation of holes in the diamond at the growth interface. This further improves the bonding strength of the growth interface, ensuring good contact between the passivation layer and the diamond layer, making the diamond layer less likely to fall off, and lowering the thermal resistance at the interface between the two.

[0009] In some other embodiments of the present application, the material of the partial area of ​​the passivation layer connected to the diamond layer is silicon-rich silicon nitride Si x N y Alternatively, the material of the entire passivation layer is silicon-rich silicon nitride Si x N y Among them, x / y>3 / 4. Silicon-rich silicon nitride has high thermal conductivity and a high silicon content, which can also slow down the hydrogen plasma (H + ) damage to the passivation layer, reducing the formation of holes in the diamond growth interface. This further improves the bonding strength of the growth interface, making the diamond layer less likely to fall off, and reduces the thermal resistance of the interface between the passivation layer and the diamond layer.

[0010] Based on the fact that the material of the part of the passivation layer connected to the diamond layer is silicon-rich silicon nitride Si x N yFor example, in some embodiments of the present application, the material of the passivation layer is silicon nitride, and the silicon content in the passivation layer decreases in the direction away from the diamond layer. The material of the part of the passivation layer connected to the diamond layer is silicon-rich silicon nitride Si x N y , the silicon content in other areas of the passivation layer is low.

[0011] In addition, the passivation layer can also be a stacked structure. Therefore, in some embodiments of the present application, the passivation layer includes at least a first passivation layer and a second passivation layer stacked, the first passivation layer is connected to the diamond layer, and the second passivation layer is connected to the semiconductor device layer. The material of the first passivation layer is polysilicon or silicon-rich silicon nitride Si x N y Wherein, x / y>3 / 4. Thus, the above technical effect can also be obtained. The material of the second passivation layer can be silicon nitride Si x N y、 Aluminum nitride, silicon oxide or silicon carbide, etc.

[0012] In a second aspect, embodiments of the present application further include a method for manufacturing an electronic device, comprising the following steps: forming a buffer layer having a first surface provided with a plurality of recessed structures; forming a passivation layer on the first surface of the buffer layer, wherein the passivation layer partially fills the depth of the plurality of recessed structures; forming a diamond layer on the passivation layer, wherein the diamond layer fills the remaining depth of the plurality of recessed structures; and forming a semiconductor device layer on a second surface of the buffer layer, wherein the second surface is opposite to the first surface. Therefore, the electronic device described above can be manufactured using the method for manufacturing an electronic device according to embodiments of the present application.

[0013] Based on this, in some embodiments of the present application, the aforementioned formation of a buffer layer having a plurality of recessed structures on a first surface specifically includes: forming a plurality of recessed structures on a side surface of the initial buffer layer through any one or both of a wet etching process, a dry etching process, and a photolithography process. Thus, a buffer layer having a plurality of recessed structures on a first surface is obtained by forming a nanometer or micrometer-scale rough surface or a patterned plurality of recessed structures on the first surface of the buffer layer. There are various roughening processes for forming the plurality of recessed structures on a side surface of the initial buffer layer, and an appropriate process can be selected based on actual needs.

[0014] Furthermore, in some embodiments of the present application, forming the diamond layer on the passivation layer specifically includes: sowing seed crystals on the passivation layer. Subsequently, growing diamond on the passivation layer seeded with seed crystals to form an initial diamond layer. Thereafter, grinding and polishing a surface of the initial diamond layer away from the passivation layer to form the diamond layer.

[0015] In some embodiments of the present application, before forming the buffer layer having a plurality of recessed structures on the first surface, the method for manufacturing the electronic device further includes: forming an initial buffer layer on the substrate.

[0016] Based on the above fabrication method, in some embodiments of the present application, forming a semiconductor device layer on the second surface of the buffer layer specifically includes: removing the substrate; forming an initial semiconductor device layer on the second surface of the buffer layer; fabricating a semiconductor device on the initial semiconductor device layer to form a semiconductor device layer. Thus, a semiconductor device having desired performance is fabricated.

[0017] In other embodiments of the present application, before forming the buffer layer having a plurality of recessed structures on the first surface, the method for manufacturing an electronic device further includes: sequentially forming an initial buffer layer and an intermediate passivation layer on a side surface of the substrate; placing a temporary carrier on the intermediate passivation layer; and removing the substrate.

[0018] Based on the above process, in some embodiments of the present application, forming a semiconductor device layer on the second surface of the buffer layer specifically includes: sequentially removing the temporary carrier and the intermediate passivation layer; forming an initial semiconductor device layer on the second surface of the buffer layer; and fabricating a semiconductor device on the initial semiconductor device layer to form a semiconductor device layer. Thus, a semiconductor device with desired performance is fabricated.

[0019] In some other embodiments of the present application, before forming the buffer layer having a plurality of recessed structures on the first surface, the method for manufacturing an electronic device further includes: sequentially forming an initial buffer layer, an initial semiconductor device layer, and an intermediate passivation layer on a side surface of the substrate; placing a temporary carrier on the intermediate passivation layer; and removing the substrate.

[0020] Based on the above process, in some embodiments of the present application, forming a semiconductor device layer on the second surface of the buffer layer specifically includes: sequentially removing the temporary carrier and the intermediate passivation layer. Semiconductor devices are then fabricated on the initial semiconductor device layer to form a semiconductor device layer. Thus, a semiconductor device with desired performance is fabricated.

[0021] In some other embodiments of the present application, before forming the buffer layer having a plurality of recessed structures on the first surface, the method for manufacturing the electronic device further includes: sequentially forming an intermediate buffer layer, an initial semiconductor device layer and an initial buffer layer on the substrate.

[0022] Based on the above process, in some embodiments of the present application, forming a semiconductor device layer on the second surface of the buffer layer specifically includes: removing the substrate and the intermediate buffer layer in sequence, and fabricating a semiconductor device on the initial semiconductor device layer to form a semiconductor device layer.

[0023] In a third aspect, an embodiment of the present application provides another electronic device. The electronic device may be a chip, or various semiconductor discrete devices, etc. The electronic device includes a diamond layer, a passivation layer, and a semiconductor device layer. The passivation layer and the semiconductor device layer are sequentially stacked on one side surface of the diamond layer. The material of the portion of the passivation layer connected to the diamond layer is polycrystalline silicon or silicon-rich silicon nitride Si. x N y Alternatively, the entire passivation layer is made of polysilicon or silicon-rich silicon nitride Si x N y Among them, x / y>3 / 4. Polysilicon and silicon-rich silicon nitride Si x N y The thermal conductivity of polysilicon is high. In addition, polysilicon and silicon-rich silicon nitride Si x N y It can slow down the hydrogen plasma (H + ) damage to the passivation layer, reducing the formation of holes in the diamond at the growth interface. This improves the bonding strength of the growth interface, ensuring good contact between the passivation layer and the diamond layer, making the diamond layer less likely to fall off, and lowering the thermal resistance at the interface between the passivation layer and the diamond layer.

[0024] Based on this, in some embodiments of the present application, the material of the passivation layer is silicon nitride, and the silicon content in the passivation layer decreases gradually in a direction away from the diamond layer.

[0025] In addition, the passivation layer can be a stacked structure. Therefore, in some embodiments of the present application, the passivation layer includes at least a first passivation layer and a second passivation layer stacked, the first passivation layer is connected to the diamond layer, and the second passivation layer is connected to the semiconductor device layer. The material of the first passivation layer is polysilicon or silicon-rich silicon nitride Si x N y Wherein, x / y>3 / 4. Thus, the above technical effect is achieved. The material of the second passivation layer can be silicon nitride Si3N4, aluminum nitride, silicon oxide or silicon carbide.

[0026] In a fourth aspect, an embodiment of the present application further provides a method for manufacturing an electronic device, comprising the following steps: forming a diamond layer on a first surface of a passivation layer; forming a semiconductor device layer on a second surface of the passivation layer; the first surface and the second surface being opposite to each other; wherein the material of at least a portion of the passivation layer connected to the diamond layer is polycrystalline silicon or silicon-rich silicon nitride Si; x N y Wherein, x / y>3 / 4. Therefore, the above-mentioned electronic device can be manufactured by the manufacturing method of the electronic device of the embodiment of the present application.

[0027] Based on this, in some embodiments of the present application, forming the diamond layer on the first surface of the passivation layer specifically includes: sowing seed crystals on the first surface of the passivation layer. Subsequently, growing diamond on the first surface of the passivation layer seeded with the seed crystals to form an initial diamond layer. Thereafter, grinding and polishing the surface of the initial diamond layer away from the passivation layer to form the diamond layer.

[0028] In some embodiments of the present application, before forming the diamond layer on the first surface of the passivation layer, the method for manufacturing an electronic device further includes: sequentially forming an intermediate buffer layer, an initial semiconductor device layer, and a passivation layer on a side surface of the substrate. The surface of the passivation layer facing away from the initial semiconductor device layer is the first surface. The surface of the passivation layer connected to the initial semiconductor device layer is the second surface.

[0029] Based on the above process, in some embodiments of the present application, forming a semiconductor device layer on the second surface of the passivation layer specifically includes: sequentially removing the substrate and the intermediate buffer layer. A semiconductor device is fabricated on the initial semiconductor device layer to form the semiconductor device layer. Thus, a semiconductor device with desired performance is fabricated.

[0030] In some other embodiments of the present application, before forming the diamond layer on the first surface of the passivation layer, the above-mentioned electronic device manufacturing method further includes: sequentially forming an intermediate buffer layer, an initial semiconductor device layer, and an intermediate passivation layer on a side surface of the substrate; placing a temporary carrier on the intermediate passivation layer; removing the substrate and the intermediate buffer layer; and forming a passivation layer on the initial semiconductor device layer. The surface of the passivation layer connected to the initial semiconductor device layer is the second surface, and the surface of the passivation layer remote from the initial semiconductor device layer is the first surface.

[0031] In some other embodiments of the present application, the substrate is a silicon substrate. Before forming the diamond layer on the first surface of the passivation layer, the method for manufacturing the electronic device further includes: sequentially forming a buffer layer, an initial semiconductor device layer, and an intermediate passivation layer on a side surface of the substrate. A temporary carrier is placed on the intermediate passivation layer. The substrate is thinned to form the passivation layer. Therefore, the passivation layer is made of single crystal silicon.

[0032] Based on the two aforementioned process flows, in some embodiments of the present application, forming a semiconductor device layer on the second surface of the passivation layer specifically includes sequentially removing the temporary carrier and the intermediate passivation layer. Semiconductor devices are then fabricated on the initial semiconductor device layer to form a semiconductor device layer. This results in the fabrication of a semiconductor device with desired performance.

[0033] In a fifth aspect, embodiments of the present application further provide an electronic device comprising a circuit board and the electronic device described in the above embodiments. The electronic device is disposed on the circuit board. Since the electronic device in the electronic device of the present embodiment has the same structure as the electronic device described in the above embodiments, both devices can solve the same technical problems and achieve the same technical effects, and therefore will not be further described here. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] In order to illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments of the present application will be described below.

[0035] Figure 1 This is a schematic diagram of an explosion in which the electronic device is a mobile phone according to an embodiment of the present application;

[0036] Figure 2 This is a schematic diagram of the structural disassembly of the electronic device of Example 1;

[0037] Figure 3 is a schematic cross-sectional view of the electronic device having a triangular sawtooth-shaped recessed structure in Example 1;

[0038] Figure 4 is a schematic cross-sectional view of the electronic device having a rectangular zigzag recessed structure in Example 1;

[0039] Figure 5 is a schematic cross-sectional view of the electronic device having a diode in Example 1;

[0040] Figure 6 (a), (b), (c), (d), (e), (f), (g), (h), and (i) are schematic structural diagrams of the steps in the method for manufacturing the electronic device of Example 2;

[0041] Figure 7 (a), (b), (c), (d), (e), (f), (g), (h), (i), (j), (k), (l), and (m) are schematic structural diagrams of respective steps in the method for manufacturing an electronic device in Example 3;

[0042] Figure 8 (a), (b), (c), (d), (e), (f), (g), (h), (i), (j), (k), and (l) are schematic structural diagrams of respective steps in the method for manufacturing an electronic device of Example 4;

[0043] Figure 9 (a), (b), (c), (d), (e), (f), (g), (h), and (i) are schematic structural diagrams of the steps in the method for manufacturing the electronic device of Example 5;

[0044] Figure 10is a schematic cross-sectional view of an electronic device in Example 6;

[0045] Figure 11 is a schematic cross-sectional view of another electronic device in Example 6;

[0046] Figure 12 Schematic cross-sectional view of an electronic device having a first passivation layer and a second passivation layer according to Example 6;

[0047] Figure 13 is a schematic cross-sectional view of an electronic device having a diode in Example 6;

[0048] Figure 14 (a), (b), (c), (d), (e), (f), (g), and (h) are schematic structural diagrams of respective steps in the method for manufacturing an electronic device of Example 7;

[0049] Figure 15 (a), (b), (c), (d), (e), (f), (g), (h), (i), (j), (k), and (l) are schematic structural diagrams of respective steps in the method for manufacturing an electronic device of Example 8;

[0050] Figure 16 (a), (b), (c), (d), (e), (f), (g), (h), (i), and (j) are schematic structural diagrams of respective steps in the method for manufacturing an electronic device of Example 9;

[0051] Figure 17 is a schematic structural diagram of the first electronic device in Example 10;

[0052] Figure 18 is a schematic structural diagram of the second electronic device in Example 10;

[0053] Figure 19 Schematic diagram of the structure of the electronic device having the first passivation layer and the second passivation layer in Example 10.

[0054] Figure Number:

[0055] 1000-electronic device; 100-screen; 200-middle frame; 300-back cover; 400-mainboard; 500-electronic device; 1-buffer layer; 01-initial buffer layer; 1a / 2a-first surface; 1b / 2b-second surface; 11-recessed structure; 2-passivation layer; 21-first passivation layer; 22-second passivation layer; 3-diamond layer; 03-planted crystal; 031-initial diamond layer; 4-semiconductor device layer; 04-initial semiconductor device layer; 41-semiconductor device; 411-source; 412-gate; 413-drain; 5-substrate; 6-intermediate passivation layer; 7-temporary carrier; 8-intermediate buffer layer. DETAILED DESCRIPTION

[0056] In order to make the purpose, technical solutions and advantages of this application clearer, this application will be further described in detail below with reference to the accompanying drawings.

[0057] Hereinafter, the terms "first," "second," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature identified with "first," "second," etc., may explicitly or implicitly include one or more of the features. In the description of this application, unless otherwise specified, "plurality" means two or more.

[0058] In addition, in this application, directional terms such as "up", "down", "left", "right", "horizontal" and "vertical" are defined relative to the orientation of the components in the drawings. It should be understood that these directional terms are relative concepts. They are used for relative description and clarification, and they can change accordingly according to changes in the orientation of the components in the drawings.

[0059] In this application, unless otherwise specified or limited, the term "connection" should be understood broadly. For example, "connection" can refer to mechanical or physical connections. It can be fixed, removable, or integrated; it can be direct or indirectly connected through an intermediary. It can also be understood as physical contact and electrical continuity between components, or as a circuit structure in which different components are connected through physical circuits such as PCB copper foil or wires that can transmit electrical signals.

[0060] The present application provides an electronic device, which is used in the fields of communications, automobiles, lighting, laser processing, laser display, etc. Therefore, the electronic device may include various devices in mobile base stations, various devices in satellite communications, charging equipment, power supply equipment, lighting equipment (such as LED lights), displays, sensors, radio frequency power equipment (such as mobile phones), laser communication equipment, laser processing equipment, laser display equipment, etc. The embodiments of the present application do not impose any special restrictions on the specific form of the above-mentioned electronic equipment. For the convenience of explanation, the following is all based on the electronic device as follows. Figure 2 The mobile phone shown is used as an example for illustration.

[0061] Please refer to Figure 1 , Figure 1 The exploded diagram of a mobile phone provided in some embodiments of the present application. As can be seen from the above, in this embodiment, the electronic device 1000 is a mobile phone. The electronic device 1000 may include the following: Figure 3The screen 100 , the middle frame 200 , the rear cover 300 , a mainboard 400 (such as a circuit board) fixed on the middle frame 200 , and various electronic components arranged on the mainboard 400 are shown.

[0062] The electronic device may be a chip or various power electronic devices, such as a semiconductor diode, a semiconductor transistor, etc.

[0063] The heating problem is one of the important issues that mobile phones need to solve. In order to solve this problem, many electronic devices use diamond as a heat dissipation material. However, due to the large difference in the lattice and thermal expansion coefficient between diamond and heterogeneous substrate materials, and the very high temperature of diamond coating growth (usually 600-1200 ° C), the growth interface stress between the heterogeneous material and diamond after growth is very large, which can easily cause the diamond film layer to fall off or even crack and other failure phenomena to occur. In particular, the problem of stress failure of diamond coating growth on large-scale heterogeneous materials is more serious. In addition, during the nucleation process of diamond coating, hydrogen plasma (H + ) can cause etching damage to the surface of certain heterogeneous materials. After diamond growth, cavities form at the growth interface, resulting in poor bonding strength and easy diamond film shedding. This can especially lead to diamond film removal failure during diamond grinding and polishing processes.

[0064] To address this problem, embodiments of the present application provide electronic devices with improved structures. The electronic devices may include radio frequency power amplifiers, power electronic devices, light-emitting devices, semiconductor lasers, etc. This is described below with reference to several specific embodiments.

[0065] Example 1

[0066] This example is an electronic device 500. Figure 2 and Figure 3 The electronic device 500 includes a buffer layer 1, a passivation layer 2, a diamond layer 3 and a semiconductor device layer 4. The buffer layer 1 has a first surface 1a and a second surface 1b arranged opposite to each other. A plurality of recessed structures 11 are formed on the first surface 1a. The passivation layer 2 covers the first surface 1a of the buffer layer 1, and the semiconductor device layer 4 is stacked on the second surface 1b of the buffer layer 1. The semiconductor device layer 4 has one or more semiconductor devices 41. The passivation layer 2 can fill part of the depth of the plurality of recessed structures 11. Therefore, the thickness δ of the passivation layer 2 is less than the depth D of the recessed structure 11. Part of the depth of the plurality of recessed structures 11 is not fully filled. The diamond layer 3 is stacked on the side surface of the passivation layer 2 away from the buffer layer 1, and can fill the remaining depth of the plurality of recessed structures 11.

[0067] Because the buffer layer 1 is usually thicker than the passivation layer 2, compared to directly forming the above-mentioned multiple recessed structures 11 on the passivation layer 2 (such as performing a roughening treatment to form multiple recessed structures 11), a rougher surface morphology or recessed pattern can be obtained on the buffer layer 1 by performing a roughening treatment. That is, the depth of the multiple recessed structures 11 is deeper, so that the area of ​​the outer surface of the first surface 1a of the buffer layer 1 is larger. The thickness of the passivation layer 2 is less than the depth of the recessed structure 11. The surface area of ​​the passivation layer 2 also increases, and the bonding force between the passivation layer 2 and the buffer layer 1, as well as the bonding force between the diamond layer 3 and the passivation layer 2 are stronger. In addition, since the direction of the interface stress between the diamond layer 3 and the passivation layer 2 changes with the surface recessed structure 11, its interface stress is decomposed into local smaller stresses in different directions, thereby, the stress between the diamond layer 3 and the passivation layer 2 is smaller. When manufacturing the above-mentioned electronic device 500, the warping of the wafer is smaller, which is beneficial to the subsequent tape-out process.

[0068] Furthermore, since the heat generated by the semiconductor device 41 can be transferred to the diamond layer 3 through the buffer layer 1 and the passivation layer 2 in sequence for dissipation, it can be understood that, compared to a case where the diamond layer 3 is not provided within the recessed structure 11, the distance between the diamond layer 3 filled within the recessed structure 11 and the semiconductor device 41 is shorter, bringing the diamond layer 3 closer to the hotspot of the semiconductor device 41, resulting in better heat dissipation and improved heat dissipation performance of the electronic device 500. Furthermore, the thickness of the diamond layer 3 can be much greater than the depth D of the recessed structure 11.

[0069] The above-mentioned multiple recessed structures 11 can form a rough morphology or recessed pattern of hundreds of nanometers to micrometers. In addition, the recessed structure 11 can be of various shapes. For example, the recessed structure 11 is Figure 3 The triangle shown, or Figure 4 The rectangle shown.

[0070] It should be noted that the electronic device 500 of this example may include a radio frequency power amplifier, a power electronic device, a light emitting device, a semiconductor laser, a radio frequency chip, a power chip, a semiconductor diode, a semiconductor transistor, etc. This application does not impose any limitation on this.

[0071] The semiconductor device layer 4 may include an initial semiconductor device layer 04 and one or more semiconductor devices 41. The initial semiconductor device layer 04 and the buffer layer 1 are made of the same component system. Taking the initial semiconductor device layer 04 as an example, the material of the initial semiconductor device layer 04 is silicon Si, silicon carbide SiC, gallium nitride GaN, gallium arsenide GaAs, indium phosphide InP, etc. The semiconductor device 41 is located on the initial semiconductor device layer 04. The semiconductor device 41 may be a diode or a transistor. Figure 3Taking the transistor shown in the figure as an example, the source 411, gate 412 and drain 413 in the semiconductor device 41 are composed of multiple layers of metal. Figure 5 In the diode shown, semiconductor device 41 includes an anode (P-pole) 413 and a cathode (N-pole) 414. Positive and negative electrodes 413 and 414 are also composed of multiple layers of metal. Examples of these metals include chromium (Cr), aluminum (Al), titanium (Ti), platinum (Pt), gold (Au), and nickel (Ni). The passivation layer 2 can be made of silicon nitride (Si3N4), silicon dioxide (SiO2), aluminum nitride (AlN), hafnium dioxide (HfO2), tantalum pentoxide (Ta2O5), aluminum oxide (Al2O3), zirconium dioxide (ZrO2), and the like.

[0072] Example 2

[0073] This example is a method for manufacturing an electronic device 500, which can be used to manufacture the electronic device 500 of Example 1 above. Figure 6 The manufacturing method of the electronic device 500 includes the following steps:

[0074] S201 : forming an initial buffer layer 01 on the substrate 5 .

[0075] For example, Figure 6 As shown in (a), an initial buffer layer 01 is grown on a substrate 5 .

[0076] S202 : forming a plurality of recessed structures 11 on the initial buffer layer 01 to obtain a buffer layer 1 .

[0077] For example, Figure 6 As shown in (b), a rough topography or pattern ranging from hundreds of nanometers to micrometers can be formed on the initial buffer layer 1 through any one or both of a wet etching process, a dry etching process, and a photolithography process to obtain a buffer layer 1. The surface of the buffer layer 01 away from the substrate 5 is a first surface 1a, and the surface of the buffer layer 01 connected to the substrate 5 is a second surface 1b.

[0078] S203 : forming a passivation layer 2 on the first surface 1 a of the buffer layer 1 , wherein the passivation layer 2 fills a portion of the depth of the plurality of recessed structures 11 .

[0079] For example, Figure 6 As shown in (c), a passivation layer 2 may be formed on the first surface 1 a of the buffer layer 1 by a deposition process (such as a physical vapor deposition process or a chemical vapor deposition process).

[0080] S204 : forming a diamond layer 3 on the passivation layer 2 , wherein the diamond layer 3 fills the remaining depths of the plurality of recessed structures 11 .

[0081] For example, the diamond layer 3 may be formed on the passivation layer 2 by the following steps:

[0082] S2041 : sowing the seed crystal 03 on the passivation layer 2 .

[0083] Among them, such as Figure 6 As shown in (d), the seed crystal 03 is sown ultrasonically on the passivation layer 2. The selected diamond powder particles should be as small as possible from the size of the roughened morphology or pattern (i.e., the size of the recessed structure 11) to ensure that the diamond seeds can also be deposited in the recessed structure 11, facilitating the subsequent deposition of diamonds in the recessed structure 11.

[0084] S2042 : growing diamonds on the passivation layer 2 seeded with the planted crystals 03 to form an initial diamond layer 031 .

[0085] Among them, such as Figure 6 As shown in (e), a diamond coating is grown on the passivation layer 2 seeded with the planted crystal 03 by a hot filament chemical vapor deposition (HFCVD) process or a microwave plasma chemical vapor deposition (MPCVD) process to form an initial diamond layer 031.

[0086] S2043 : Grinding and polishing the surface of the initial diamond layer 031 away from the passivation layer 2 to form a diamond layer 3 .

[0087] Among them, such as Figure 6 As shown in (f), the surface of the initial diamond layer 031 away from the passivation layer 2 is ground and polished by a grinding and polishing device to form a flat diamond surface, thereby obtaining the final desired diamond layer 3.

[0088] S205: removing the substrate 5.

[0089] For example, Figure 6 As shown in (g), the substrate 5 is removed from the stacked structure of the substrate 5, the buffer layer 1, the passivation layer 2 and the diamond layer 3.

[0090] S206 : forming an initial semiconductor device layer 04 on the second surface 1 b of the buffer layer 1 .

[0091] For example, Figure 6 As shown in (h), an initial semiconductor device layer 04 is grown on the second surface 1 b of the buffer layer 1 .

[0092] S207 : manufacturing semiconductor devices 41 on the initial semiconductor device layer 04 to form a semiconductor device layer 4 .

[0093] For example, Figure 6 As shown in (i), semiconductor devices 41 are fabricated on the initial semiconductor device layer 04 through various device fabrication processes to form a semiconductor device layer 4. Thus, the electronic device 500 of Example 1 can be fabricated by the fabrication method of the electronic device 500 of this example.

[0094] In conjunction with the above-mentioned manufacturing method, for example, a potassium hydroxide (KOH) solution is used to etch the initial buffer layer 01 (e.g., gallium nitride (GaN)) to form a rough morphology ranging from hundreds of nanometers to micrometers. Thus, the aforementioned multiple recessed structures 11 are obtained. A passivation layer 2 (e.g., silicon nitride (SiN)) is deposited on the rough morphology surface, and diamond is then grown to form a diamond-based gallium nitride (GaN) epitaxial wafer. Diamond-based gallium nitride (GaN) transistors, diodes, light-emitting diodes (LEDs), laser diodes (LDs), and other devices can be fabricated on the initial semiconductor device layer 04 of this epitaxial wafer.

[0095] For another example, a patterned structure is formed on the initial buffer layer 01 (such as gallium nitride GaN) using a photolithography process and a dry etching process to obtain the above-mentioned multiple recessed structures 11. For example, the dry etching process can specifically use inductively coupled plasma (ICP) technology. Subsequently, a passivation layer 2 (such as silicon nitride SiN) is deposited on the patterned structure, and diamond is then grown to form a diamond-based gallium nitride GaN epitaxial wafer. On the initial semiconductor device layer 04 of the epitaxial wafer, diamond-based gallium nitride GaN transistors, diodes, light-emitting diodes, laser diodes and other devices can be prepared.

[0096] For example, a patterned structure is formed on an initial buffer layer 01 (e.g., gallium nitride (GaN)) using photolithography and wet etching processes to obtain the aforementioned multiple recessed structures 11. Subsequently, a passivation layer 2 (e.g., silicon nitride (SiN)) is deposited on the patterned structure, followed by diamond growth, to form a GaN-on-diamond epitaxial wafer. Devices such as GaN-on-diamond transistors, diodes, light-emitting diodes, and laser diodes can be fabricated on the initial semiconductor device layer 04 of this epitaxial wafer.

[0097] Example 3

[0098] This example is another method for manufacturing an electronic device, which can also be used to manufacture the electronic device 500 of Example 1 above. Figure 7 , the manufacturing method of the electronic device comprises the following steps:

[0099] S301 : forming an initial buffer layer 01 and an intermediate passivation layer 6 in sequence on one side surface of a substrate 5 .

[0100] For example, Figure 7 As shown in (a) and (b), an initial buffer layer 01 and an intermediate passivation layer 6 are sequentially grown on a substrate 5 .

[0101] S302 : placing a temporary carrier 7 on the intermediate passivation layer 6 .

[0102] For example, Figure 7 As shown in (c), a temporary carrier 7 is bonded on the intermediate passivation layer 6. The bonding strength needs to be able to withstand the subsequent process temperature of diamond growth, such as 600°C to 1200°C.

[0103] S303: removing the substrate 5.

[0104] For example, Figure 7 As shown in (d), the substrate 5 is removed from the stacked structure of the substrate 5, the initial buffer layer 01, the intermediate passivation layer 6 and the temporary carrier 7.

[0105] S304 : forming a plurality of recessed structures 11 on a surface of the initial buffer layer 01 away from the intermediate passivation layer 6 to obtain a buffer layer 1 .

[0106] For example, Figure 7 As shown in (e), a rough topography or patterned structure ranging from hundreds of nanometers to micrometers can be formed on the surface of the initial buffer layer 01 away from the intermediate passivation layer 6 by any one or both of a wet etching process, a dry etching process, and a photolithography process, thereby obtaining a plurality of recessed structures 11. The surface of the buffer layer 1 away from the intermediate passivation layer 6 is a first surface 1a, and the surface of the buffer layer 1 connected to the intermediate passivation layer 6 is a second surface 1b.

[0107] S305 : forming a passivation layer 2 on the first surface 1 a of the buffer layer 1 .

[0108] For example, Figure 7 As shown in (f), a passivation layer 2 can be formed on the first surface 1a of the buffer layer 1 by a deposition process (such as a physical vapor deposition process or a chemical vapor deposition process). The passivation layer 2 can fill part of the regions of the plurality of recessed structures 11 .

[0109] S306 : forming a diamond layer 3 on the passivation layer 2 .

[0110] For example, the diamond layer 3 may be formed on the passivation layer 2 by the following steps:

[0111] S3061 : sowing the seed crystal 03 on the passivation layer 2 .

[0112] Among them, such as Figure 7As shown in (g), the seed crystal 03 is sown on the passivation layer 2 by ultrasonic means. The selected diamond powder particles should be as small as possible from the size of the recessed structure 11 to ensure that the diamond seeds can be deposited in the recessed structure 11, which facilitates the subsequent deposition of diamonds in the recessed structure 11.

[0113] S3062 : growing diamonds on the passivation layer 2 seeded with the planted crystals 03 to form an initial diamond layer 031 .

[0114] Among them, such as Figure 7 As shown in (h), a diamond coating is grown on the passivation layer 2 seeded with the planted crystal 03 by a hot wire chemical vapor deposition process or a microwave plasma chemical vapor deposition process to form an initial diamond layer 031.

[0115] S3063 : Grinding and polishing the surface of the initial diamond layer 031 away from the passivation layer 2 to form a diamond layer 3 .

[0116] Among them, such as Figure 7 As shown in (i), the surface of the initial diamond layer 031 away from the passivation layer 2 is ground and polished by a grinding and polishing device to form a flat diamond surface, thereby obtaining the final desired diamond layer 3.

[0117] S307: removing the temporary carrier 7 and the intermediate passivation layer 6 in sequence.

[0118] For example, Figure 7 As shown in (j) and (k), the temporary carrier 7 and the intermediate passivation layer 6 are removed in sequence on the stacked structure of the temporary carrier 7, the intermediate passivation layer 6, the buffer layer 1, the passivation layer 2 and the diamond layer 3.

[0119] S308 : forming an initial semiconductor device layer 04 on the second surface 1 b of the buffer layer 1 .

[0120] For example, Figure 7 As shown in (1), an initial semiconductor device layer 04 is grown on the second surface 1 b of the buffer layer 1 .

[0121] S309 : manufacturing semiconductor devices 41 on the initial semiconductor device layer 04 to form a semiconductor device layer 4 .

[0122] For example, Figure 7 As shown in (m), semiconductor devices 41 are fabricated on the initial semiconductor device layer 04 using various device fabrication processes, forming a semiconductor device layer 4. Thus, the electronic device 500 of Example 1 can be fabricated using the electronic device fabrication method of this example. The electronic device fabricated in this example has different performance from the electronic device 500 fabricated in Example 2.

[0123] Example 4

[0124] This example is another method for manufacturing an electronic device, which can also be used to manufacture the electronic device 500 of Example 1 above. Figure 8 , the manufacturing method of the electronic device comprises the following steps:

[0125] S401 : forming an initial buffer layer 01 , an initial semiconductor device layer 04 and an intermediate passivation layer 6 in sequence on one side surface of a substrate 5 .

[0126] For example, Figure 8 As shown in (a) and (b), an initial buffer layer 01 , an initial semiconductor device layer 04 and an intermediate passivation layer 6 are sequentially grown on a substrate 5 .

[0127] S402 : placing a temporary carrier 7 on the intermediate passivation layer 6 .

[0128] For example, Figure 8 As shown in (c), a temporary carrier 7 is bonded on the intermediate passivation layer 6. The bonding strength needs to be able to withstand the subsequent process temperature of diamond growth, such as 600°C to 1200°C.

[0129] S403: removing the substrate 5.

[0130] For example, Figure 8 As shown in (d), the substrate 5 is removed from the stacked structure of the substrate 5, the initial buffer layer 01, the initial semiconductor device layer 04, the intermediate passivation layer 6 and the temporary carrier 7.

[0131] S404 : forming a plurality of recessed structures 11 on a surface of the initial buffer layer 01 away from the initial semiconductor device layer 04 to obtain a buffer layer 1 .

[0132] For example, Figure 8 As shown in (e), a rough topography or patterned structure ranging from hundreds of nanometers to micrometers can be formed on the surface of the initial buffer layer 01 away from the initial semiconductor device layer 04 by any one or both of a wet etching process, a dry etching process, and a photolithography process, thereby obtaining a buffer layer 1. The surface of the buffer layer 1 away from the initial semiconductor device layer 04 is a first surface 1a, and the surface of the buffer layer 1 connected to the initial semiconductor device layer 04 is a second surface 1b.

[0133] S405 : forming a passivation layer 2 on the first surface 1 a of the buffer layer 1 .

[0134] For example, Figure 8 As shown in (f), a passivation layer 2 can be formed on the first surface 1a of the buffer layer 1 by a deposition process (such as a physical vapor deposition process or a chemical vapor deposition process). The passivation layer 2 can fill part of the regions of the plurality of recessed structures 11 .

[0135] S406 : forming a diamond layer 3 on the passivation layer 2 .

[0136] For example, the diamond layer 3 may be formed on the passivation layer 2 by the following steps:

[0137] S4061 : sowing the seed crystal 03 on the passivation layer 2 .

[0138] Among them, such as Figure 8 As shown in (g), the seed crystal 03 is sown on the passivation layer 2 by ultrasonic means. The selected diamond powder particles should be as small as possible from the size of the recessed structure 11 to ensure that the diamond seeds can be deposited in the recessed structure 11, which facilitates the subsequent deposition of diamonds in the recessed structure 11.

[0139] S4062 : growing diamond on the passivation layer 2 seeded with the planted crystal 03 to form an initial diamond layer 031 .

[0140] Among them, such as Figure 8 As shown in (h), a diamond coating is grown on the passivation layer 2 seeded with the planted crystal 03 by a hot wire chemical vapor deposition process or a microwave plasma chemical vapor deposition process to form an initial diamond layer 031.

[0141] S4063 : Grinding and polishing the surface of the initial diamond layer 031 away from the passivation layer 2 to form a diamond layer 3 .

[0142] Among them, such as Figure 8 As shown in (i), the surface of the initial diamond layer 031 away from the passivation layer 2 is ground and polished by a grinding and polishing device to form a flat diamond surface, thereby obtaining the final desired diamond layer 3.

[0143] S407: removing the temporary carrier 7 and the intermediate passivation layer 6 in sequence.

[0144] Among them, such as Figure 8 As shown in (j) and (k), the temporary carrier 7 and the intermediate passivation layer 6 are removed in sequence on the stacked structure of the temporary carrier 7, the intermediate passivation layer 6, the initial semiconductor device layer 04, the buffer layer 1, the passivation layer 2 and the diamond layer 3.

[0145] S408 : manufacturing semiconductor devices 41 on the initial semiconductor device layer 04 to form a semiconductor device layer 4 .

[0146] For example, Figure 8As shown in (1), semiconductor device 41 is fabricated on initial semiconductor device layer 04 using various device fabrication processes, forming semiconductor device layer 4. Thus, the electronic device 500 of Example 1 can be fabricated using the electronic device fabrication method of this example. The electronic device fabricated in this example has different performance from the electronic devices 500 fabricated in Examples 2 and 3.

[0147] Example 5

[0148] This example is another method for manufacturing an electronic device, which can also be used to manufacture the electronic device 500 of Example 1 above. Figure 9 , the manufacturing method of the electronic device comprises the following steps:

[0149] S501 : forming an intermediate buffer layer 8 , an initial semiconductor device layer 04 and an initial buffer layer 01 in sequence on one side surface of the substrate 5 .

[0150] For example, Figure 9 As shown in (a), an intermediate buffer layer 8, an initial semiconductor device layer 04 and an initial buffer layer 01 are sequentially grown on a substrate 5.

[0151] S502 : forming a plurality of recessed structures 11 on a surface of the initial buffer layer 01 away from the initial semiconductor device layer 04 to obtain a buffer layer 1 .

[0152] For example, Figure 9 As shown in (b), a rough topography or patterned structure ranging from hundreds of nanometers to micrometers can be formed on the surface of the initial buffer layer 01 away from the initial semiconductor device layer 04 through any one or both of a wet etching process, a dry etching process, and a photolithography process, thereby obtaining a buffer layer 1. The surface of the buffer layer 1 away from the initial semiconductor device layer 04 is a first surface 1a, and the surface of the buffer layer 1 connected to the initial semiconductor device layer 04 is a second surface 1b.

[0153] S503 : forming a passivation layer 2 on the first surface 1 a of the buffer layer 1 .

[0154] For example, Figure 9 As shown in (c), a passivation layer 2 may be formed on the first surface 1a of the buffer layer 1 by a deposition process (such as a physical vapor deposition process or a chemical vapor deposition process). The passivation layer 2 may fill a portion of the plurality of recessed structures 11 .

[0155] S504 : forming a diamond layer 3 on the passivation layer 2 .

[0156] For example, the diamond layer 3 may be formed on the passivation layer 2 by the following steps:

[0157] S5041 : sowing the seed crystal 03 on the passivation layer 2 .

[0158] Among them, such as Figure 9 As shown in (d), the seed crystal 03 is sown ultrasonically on the passivation layer 2. The selected diamond powder particles should be as small as possible from the size of the recessed structure 11 to ensure that the diamond seeds can be deposited in the recessed structure 11, which facilitates the subsequent deposition of diamonds in the recessed structure 11.

[0159] S5042 : growing diamonds on the passivation layer 2 seeded with the planted crystals 03 to form an initial diamond layer 031 .

[0160] Among them, such as Figure 9 As shown in (e), a diamond coating is grown on the passivation layer 2 seeded with the planted crystal 03 by a hot wire chemical vapor deposition process or a microwave plasma chemical vapor deposition process to form an initial diamond layer 031.

[0161] S5043 : Grinding and polishing the surface of the initial diamond layer 031 away from the passivation layer 2 to form a diamond layer 3 .

[0162] Among them, such as Figure 9 As shown in (f), the surface of the initial diamond layer 031 away from the passivation layer 2 is ground and polished by a grinding and polishing device to form a flat diamond surface, thereby obtaining the final desired diamond layer 3.

[0163] S505: removing the substrate 5 and the intermediate buffer layer 8 in sequence.

[0164] For example, Figure 9 As shown in (g) and (h), the substrate 5 and the intermediate buffer layer 8 are removed in sequence on the stacked structure of the substrate 5, the intermediate buffer layer 8, the initial semiconductor device layer 04, the buffer layer 1, the passivation layer 2 and the diamond layer 3.

[0165] S506 : manufacturing semiconductor devices 41 on the initial semiconductor device layer 04 to form a semiconductor device layer 4 .

[0166] For example, Figure 9 As shown in (i), semiconductor devices 41 are fabricated on the initial semiconductor device layer 04 using various device fabrication processes, forming a semiconductor device layer 4. Thus, the electronic device 500 of Example 1 can be fabricated using the electronic device fabrication method of this example. The electronic device fabricated in this example has different performance from the electronic devices 500 fabricated in Examples 2, 3, and 4.

[0167] Example 6

[0168] This example is another electronic device 500. Figure 10The electronic device 500 includes a diamond layer 3, a passivation layer 2 and a semiconductor device layer 4. The passivation layer 2 is stacked on one side surface of the diamond layer 3 (i.e. Figure 10 The semiconductor device layer 4 is arranged on the side surface of the passivation layer 2 away from the diamond layer 3 (i.e. Figure 10 The material of the partial area of ​​the passivation layer 2 connected to the diamond layer 3 is polysilicon or silicon-rich silicon nitride Si x N y Or, as Figure 11 As shown, the material of the entire passivation layer 2 is polysilicon or silicon-rich silicon nitride Si x N y In this application, silicon-rich silicon nitride Si x N y It means that the ratio of silicon and nitrogen is: x / y>3 / 4.

[0169] It should be noted that, for ease of understanding, Figure 10 and Figure 11 The black dots in the figure represent silicon atoms. From the density of silicon atoms, we can see that Figure 10 The silicon atom density of the passivation layer 2 is higher only in the part of the region connected to the diamond layer 3, i.e., the silicon-rich silicon oxide Si x N y .and Figure 11 The silicon atom density of the entire passivation layer 2 is shown to be high. Figure 10 and Figure 11 , and the black dots shown in the passivation layer 2 in subsequent figures do not represent the actual crystal structure of the passivation layer 2 and are only for illustration.

[0170] Thermal conductivity of polysilicon and silicon-rich silicon nitride Si x N y The thermal conductivity of polysilicon and silicon-rich silicon nitride Si is high. x N y It can slow down the hydrogen plasma (H + ) damage to the passivation layer 2, reducing the formation of holes in the diamond growth interface. As a result, the bonding strength of the growth interface is improved, the passivation layer 2 and the diamond layer 3 are in good contact, the diamond layer 3 is not easy to fall off, and the interface thermal resistance between the two is low.

[0171] Based on this, in some embodiments, the material of the passivation layer 2 is silicon nitride. Furthermore, the silicon content in the passivation layer 2 decreases gradually as it moves away from the diamond layer 3. That is, the material of the passivation layer 2 is silicon nitride with a graded silicon composition. In the region of the passivation layer 2 connected to the diamond layer 3, the ratio of silicon to nitrogen is: x / y > 3 / 4. As it moves away from the diamond layer 3, the silicon content in the passivation layer 2 gradually decreases until the ratio of silicon to nitrogen is: x / y ≤ 3 / 4.

[0172] In addition to the passivation layer 2 made of the same material, the passivation layer 2 may also be a stacked structure made of different materials. Figure 12 As shown, the passivation layer 2 comprises a first passivation layer 21 and a second passivation layer 22, and the first passivation layer 21 and the second passivation layer 22 are stacked. The first passivation layer 21 is connected to the diamond layer 3, and the second passivation layer 22 is connected to the semiconductor device layer 4. The material of the first passivation layer 21 is polysilicon or Figure 12 The silicon-rich silicon nitride Si shown x N y The material of the second passivation layer 22 can be silicon nitride Si3N4, aluminum nitride, silicon oxide or silicon carbide.

[0173] It should be noted that the passivation layer 2 can also be a stacked structure of more than two layers, and this application does not limit this. Among them, the above-mentioned semiconductor device layer 4 can include an initial semiconductor device layer 04 and one or more semiconductor devices 41. The material of the initial semiconductor device layer 04 is silicon Si, silicon carbide SiC, gallium nitride GaN, gallium arsenide GaAs, indium phosphide InP, etc. The semiconductor device 41 is located on the initial semiconductor device layer 04. The semiconductor device 41 can be a diode or a transistor. With the semiconductor device 41 as Figure 11 Taking the transistor shown in the figure as an example, the source 411, gate 412 and drain 413 in the semiconductor device 41 are composed of multiple layers of metal. Figure 13 In the diode shown, semiconductor device 41 includes an anode (P-pole) 413 and a cathode (N-pole) 414. Both electrodes 413 and 414 are also composed of multiple layers of metal. Examples of these metals include chromium (Cr), aluminum (Al), titanium (Ti), platinum (Pt), gold (Au), and nickel (Ni). The passivation layer 2 can be made of silicon nitride (Si3N4), silicon dioxide (SiO2), aluminum nitride (AlN), hafnium dioxide (HfO2), tantalum pentoxide (Ta2O5), aluminum oxide (Al2O3), zirconium dioxide (ZrO2), and the like.

[0174] Furthermore, the electronic device 500 of this example may include a radio frequency power amplifier, a power electronic device, a light emitting device, a semiconductor laser, a radio frequency chip, a power chip, a semiconductor diode, a semiconductor transistor, etc. This application does not impose any limitation on this.

[0175] Example 7

[0176] This example is a method for manufacturing an electronic device, which can be used to manufacture the electronic device 500 of Example 6 above. Figure 14 , the manufacturing method of the electronic device comprises the following steps:

[0177] S701 : forming an intermediate buffer layer 8 , an initial semiconductor device layer 04 and a passivation layer 2 in sequence on one side surface of the substrate 5 .

[0178] For example, Figure 14 As shown in (a) and (b), an intermediate buffer layer 8, an initial semiconductor device layer 04, and a passivation layer 2 are sequentially grown on one side of a substrate 5. The surface of the passivation layer 2 away from the initial semiconductor device layer 04 is a first surface 2a, and the surface of the passivation layer 2 connected to the initial semiconductor device layer 04 is a second surface 2b. The second surface 2b is opposite to the first surface 2a.

[0179] S702 : forming a diamond layer 3 on the first surface 2 a of the passivation layer 2 .

[0180] For example, the diamond layer 3 may be formed on the first surface 2a of the passivation layer 2 by the following steps:

[0181] S7021 : sowing the seed crystal 03 on the first surface 2 a of the passivation layer 2 .

[0182] Among them, such as Figure 14 As shown in (c), the seed crystal 03 is sown ultrasonically on the first surface 2a of the passivation layer 2. The selected diamond powder particles should be as small as possible from the size of the recessed structure 11 to ensure that the diamond seeds can be deposited in the recessed structure 11, facilitating the subsequent deposition of diamonds in the recessed structure 11.

[0183] S7022 : growing diamonds on the first surface 2 a of the passivation layer 2 seeded with the plant crystals 03 to form an initial diamond layer 031 .

[0184] Among them, such as Figure 14 As shown in (d), a diamond coating is grown on the first surface 2a of the passivation layer 2 seeded with the planted crystal 03 by a hot wire chemical vapor deposition process or a microwave plasma chemical vapor deposition process to form an initial diamond layer 031.

[0185] S7023: Grinding and polishing the surface of the initial diamond layer 031 away from the passivation layer 2 to form a diamond layer 3.

[0186] Among them, such as Figure 14As shown in (e), the surface of the initial diamond layer 031 away from the passivation layer 2 is ground and polished by a grinding and polishing device to form a flat diamond surface, thereby obtaining the final desired diamond layer 3. The material of the portion of the passivation layer 2 that is connected to the diamond layer 3 is polycrystalline silicon or silicon-rich silicon nitride Si. x N y Alternatively, the material of the passivation layer 2 is polysilicon or silicon-rich silicon nitride Si x N y .

[0187] Furthermore, if the passivation layer 2 includes a first passivation layer 21 and a second passivation layer 22 stacked, the above S701 is specifically as follows: forming an intermediate buffer layer 8, an initial semiconductor device layer 04, a second passivation layer 22 and a first passivation layer 21 in sequence on one side surface of the substrate 5. The material of the first passivation layer 21 is polysilicon or silicon-rich silicon nitride Si. x N y The material of the second passivation layer 22 can be silicon nitride Si3N4, aluminum nitride, silicon oxide or silicon carbide.

[0188] S703: removing the substrate 5 and the intermediate buffer layer 8 in sequence.

[0189] For example, Figure 14 As shown in (f) and (g), the substrate 5 and the intermediate buffer layer 8 are removed from the stacked structure of the substrate 5, the intermediate buffer layer 8, the initial semiconductor device layer 04, the passivation layer 2 and the diamond layer 3.

[0190] S704 : manufacturing semiconductor devices 41 on the initial semiconductor device layer 04 to form a semiconductor device layer 4 .

[0191] For example, Figure 14 As shown in (h), semiconductor devices 41 are fabricated on the initial semiconductor device layer 04 through various device fabrication processes to form a semiconductor device layer 4. Thus, the electronic device 500 of Example 6 can be fabricated by the method for fabricating an electronic device of this example.

[0192] Example 8

[0193] This example is another method for manufacturing an electronic device, which can also be used to manufacture the electronic device 500 of Example 6 above. Figure 15 , the manufacturing method of the electronic device comprises the following steps:

[0194] S801 : forming an intermediate buffer layer 8 , an initial semiconductor device layer 04 and an intermediate passivation layer 6 in sequence on one side surface of the substrate 5 .

[0195] For example, Figure 15As shown in (a) and (b), an intermediate buffer layer 8, an initial semiconductor device layer 04 and an intermediate passivation layer 6 are sequentially grown on one surface of the substrate 5.

[0196] S802 : placing a temporary carrier 7 on the intermediate passivation layer 6 .

[0197] For example, Figure 15 As shown in (c), a temporary carrier 7 is bonded on the intermediate passivation layer 6. The bonding strength needs to be able to withstand the subsequent process temperature of diamond growth, such as 600°C to 1200°C.

[0198] S803: removing the substrate 5 and the intermediate buffer layer 8.

[0199] For example, Figure 15 As shown in (d) and (e), the substrate 5 and the intermediate buffer layer 8 are removed from the stacked structure of the substrate 5, the intermediate buffer layer 8, the initial semiconductor device layer 04, the intermediate passivation layer 6 and the temporary carrier 7.

[0200] S804 : forming a passivation layer 2 on the initial semiconductor device layer 04 .

[0201] For example, Figure 15 As shown in (f), a passivation layer 2 can be formed on the initial semiconductor device layer 04 by a deposition process (such as a physical vapor deposition process or a chemical vapor deposition process). The surface of the passivation layer 2 connected to the initial semiconductor device layer 04 is the second surface 2b, and the surface of the passivation layer 2 away from the initial semiconductor device layer 04 is the first surface 2a.

[0202] S805 : forming a diamond layer 3 on the first surface 2 a of the passivation layer 2 .

[0203] For example, the diamond layer 3 may be formed on the first surface 2a of the passivation layer 2 by the following steps:

[0204] S8051 : sowing the seed crystal 03 on the first surface 2 a of the passivation layer 2 .

[0205] Among them, such as Figure 15 As shown in (g), the seed crystal 03 is sown ultrasonically on the first surface 2a of the passivation layer 2. The selected diamond powder particles should be as small as possible from the size of the recessed structure 11 to ensure that the diamond seeds can also be deposited in the recessed structure 11, facilitating the subsequent deposition of diamonds in the recessed structure 11.

[0206] S8052 : growing diamonds on the first surface 2 a of the passivation layer 2 seeded with the plant crystals 03 to form an initial diamond layer 031 .

[0207] Among them, such as Figure 15As shown in (h), a diamond coating is grown on the first surface 2a of the passivation layer 2 seeded with the planted crystal 03 by a hot wire chemical vapor deposition process or a microwave plasma chemical vapor deposition process to form an initial diamond layer 031.

[0208] S8053: Grinding and polishing the surface of the initial diamond layer 031 away from the passivation layer 2 to form a diamond layer 3.

[0209] Among them, such as Figure 15 As shown in (i), the surface of the initial diamond layer 031 away from the passivation layer 2 is ground and polished by a grinding and polishing device to form a flat diamond surface, thereby obtaining the final desired diamond layer 3.

[0210] S806: removing the temporary carrier 7 and the intermediate passivation layer 6 in sequence.

[0211] For example, Figure 15 As shown in (j) and (k), the temporary carrier 7 and the intermediate passivation layer 6 are removed from the stacked structure of the temporary carrier 7, the intermediate passivation layer 6, the initial semiconductor device layer 04, the passivation layer 2 and the diamond layer 3.

[0212] S807 : Fabricate semiconductor devices 41 on the initial semiconductor device layer 04 to form a semiconductor device layer 4 .

[0213] For example, Figure 15 As shown in (1), semiconductor device 41 is fabricated on initial semiconductor device layer 04 using various device fabrication processes to form semiconductor device layer 4. Thus, the electronic device 500 of Example 1 can be fabricated using the electronic device fabrication method of this example. The electronic device fabricated in this example has different performance from that of electronic device 500 of Example 7.

[0214] Example 9

[0215] This example is a method for manufacturing an electronic device, which can be used to manufacture the electronic device 500 of Example 6 above. Figure 16 , the manufacturing method of the electronic device comprises the following steps:

[0216] S901 : forming a buffer layer 1 , an initial semiconductor device layer 04 and an intermediate passivation layer 6 in sequence on one side surface of a substrate 5 .

[0217] For example, Figure 16 As shown in (a) and (b), a buffer layer 1, an initial semiconductor device layer 04 and an intermediate passivation layer 6 are sequentially grown on one side surface of a substrate 5. The substrate 5 is a silicon substrate.

[0218] S902 : placing a temporary carrier 7 on the intermediate passivation layer 6 .

[0219] For example, Figure 16 As shown in (c), a temporary carrier 7 is bonded on the intermediate passivation layer 6. The bonding strength needs to be able to withstand the subsequent process temperature of diamond growth, such as 600°C to 1200°C.

[0220] S903 : thinning the substrate 5 to form a passivation layer 2 .

[0221] For example, Figure 16 As shown in (d), the thickness of the substrate 5 is thinned by a wafer thinning device to obtain a passivation layer 2 made of silicon. The surface of the passivation layer 2 connected to the buffer layer 1 is the second surface 2b, and the surface of the passivation layer 2 away from the buffer layer 1 is the first surface 2a.

[0222] S904 : forming a diamond layer 3 on the first surface 2 a of the passivation layer 2 .

[0223] For example, the diamond layer 3 may be formed on the first surface 2a of the passivation layer 2 by the following steps:

[0224] S9041 : sowing the seed crystal 03 on the first surface 2 a of the passivation layer 2 .

[0225] Among them, such as Figure 16 As shown in (e), the seed crystal 03 is sown ultrasonically on the first surface 2a of the passivation layer 2. The selected diamond powder particles should be as small as possible from the size of the recessed structure 11 to ensure that the diamond seeds can be deposited in the recessed structure 11, facilitating the subsequent deposition of diamonds in the recessed structure 11.

[0226] S9042 : growing diamond on the recessed structure 11 of the passivation layer 2 seeded with the planted crystal 03 to form an initial diamond layer 031 .

[0227] Among them, such as Figure 16 As shown in (f), a diamond coating is grown on the recessed structure 11 of the passivation layer 2 seeded with the planted crystal 03 by a hot wire chemical vapor deposition process or a microwave plasma chemical vapor deposition process to form an initial diamond layer 031.

[0228] S9043: Grinding and polishing the surface of the initial diamond layer 031 away from the passivation layer 2 to form a diamond layer 3.

[0229] Among them, such as Figure 16 As shown in (g), the surface of the initial diamond layer 031 away from the passivation layer 2 is ground and polished by a grinding and polishing device to form a flat diamond surface, thereby obtaining the final desired diamond layer 3.

[0230] S905: removing the temporary carrier 7 and the intermediate passivation layer 6 in sequence.

[0231] For example, Figure 16 As shown in (h) and (i), the temporary carrier 7 and the intermediate passivation layer 6 are removed from the stacked structure of the temporary carrier 7, the intermediate passivation layer 6, the initial semiconductor device layer 04, the buffer layer 1, the passivation layer 2 and the diamond layer 3.

[0232] S906 : manufacturing semiconductor devices 41 on the initial semiconductor device layer 04 to form a semiconductor device layer 4 .

[0233] For example, Figure 16 As shown in (j), semiconductor devices 41 are fabricated on the initial semiconductor device layer 04 using various device fabrication processes to form a semiconductor device layer 4. Thus, the electronic device 500 of Example 6 having a buffer layer 1 can be fabricated using the method for fabricating an electronic device of this example. The performance of the electronic device fabricated in this example differs from that of the electronic device 500 fabricated in Example 7 and the electronic device 500 fabricated in Example 8.

[0234] Example 10

[0235] This example provides another electronic device 500. The structure of the electronic device 500 is similar to that of Example 1, except that the material of the partial area of ​​the passivation layer 2 connected to the diamond layer 3 is polysilicon or silicon. Figure 17 The silicon-rich silicon nitride Si x N y Alternatively, the material of the entire passivation layer 2 is polysilicon or Figure 18 The silicon-rich silicon nitride Si x N y .

[0236] Thermal conductivity of polysilicon and silicon-rich silicon nitride Si x N y The thermal conductivity of polysilicon and silicon-rich silicon nitride Si is high. x N y It can slow down the hydrogen plasma (H + ) damage to the passivation layer 2, reducing the formation of holes in the diamond at the growth interface. This improves the bonding strength of the growth interface, ensuring good contact between the passivation layer 2 and the diamond layer 3, making the diamond layer 3 less likely to fall off, and lowering the thermal resistance at the interface between the passivation layer 2 and the diamond layer 3.

[0237] Based on this, in some embodiments, the material of the passivation layer 2 is silicon nitride Si x N y Moreover, the content of silicon in the passivation layer 2 decreases gradually in the direction away from the diamond layer 3. That is, the material of the passivation layer 2 is silicon nitride Si with a gradient silicon component. x N yIn the region of the passivation layer 2 that connects to the diamond layer 3, the ratio of silicon to nitrogen is x / y > 3 / 4. Moving away from the diamond layer 3, the silicon content in the passivation layer 2 gradually decreases until the ratio of silicon to nitrogen is x / y ≤ 3 / 4.

[0238] In addition to the passivation layer 2 made of the same material, the passivation layer 2 may also be a stacked structure. Figure 19 As shown, the passivation layer 2 includes a first passivation layer 21 and a second passivation layer 22, and the first passivation layer 21 and the second passivation layer 22 are stacked. The first passivation layer 21 is connected to the diamond layer 3, and the second passivation layer 22 is connected to the buffer layer 1. The material of the first passivation layer 21 is polysilicon or silicon-rich silicon nitride Si x N y The material of the second passivation layer 22 can be silicon nitride Si3N4 (the ratio of silicon to nitrogen is: x / y≤3 / 4), aluminum nitride, silicon oxide or silicon carbide.

[0239] It should be noted that the passivation layer 2 can also be a stacked structure with more than two layers, and this application does not limit this. In summary, the electronic device 500 of this example is a combination of Example 1 and Example 5. Moreover, the manufacturing method of the electronic device 500 of this example 1 in the above-mentioned Examples 2-5 can also be used to manufacture the electronic device 500 of this example, which will not be repeated here. Among them, for the passivation layer 2 including the first passivation layer 21 and the second passivation layer 22, when using Examples 2-5 for manufacturing, the formation of the passivation layer 2 is specifically: forming the first passivation layer 21 and the second passivation layer 22 in sequence, or forming the second passivation layer 22 and the first passivation layer 21 in sequence.

[0240] Furthermore, the electronic device 500 of this example may include a radio frequency power amplifier, a power electronic device, a light emitting device, a semiconductor laser, a radio frequency chip, a power chip, a semiconductor diode, a semiconductor transistor, etc. This application does not impose any limitation on this.

[0241] The above description is merely a specific embodiment of the present application, but the scope of protection of the present application is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in this application should be included in the scope of protection of this application. Therefore, the scope of protection of this application should be based on the scope of protection of the claims.

Claims

1. An electronic device, characterized in that: include: a buffer layer, the buffer layer having a first surface and a second surface opposite to each other; the first surface being formed with a plurality of recessed structures; a passivation layer covering the first surface of the buffer layer and filling a portion of the depth of the plurality of recessed structures; a diamond layer, the diamond layer being stacked on a surface of the passivation layer away from the buffer layer and filling a remaining depth of the plurality of recessed structures; A semiconductor device layer is stacked on the second surface of the buffer layer.

2. The electronic device according to claim 1, wherein The material of at least a portion of the passivation layer connected to the diamond layer is polysilicon.

3. The electronic device according to claim 1, wherein The material of at least the portion of the passivation layer connected to the diamond layer is silicon-rich silicon nitride Si x N y ; Among them, x / y>3 / 4.

4. The electronic device according to claim 3, wherein: The material of the passivation layer is silicon nitride, and the content of silicon in the passivation layer decreases gradually in a direction away from the diamond layer.

5. The electronic device according to any one of claims 1 to 3, characterized in that The passivation layer comprises at least a first passivation layer and a second passivation layer stacked together, wherein the first passivation layer is connected to the diamond layer, and the second passivation layer is connected to the semiconductor device layer; the material of the first passivation layer is polysilicon, or the material of the first passivation layer is silicon-rich silicon nitride Si x N y ; Among them, x / y>3 / 4.

6. A method for manufacturing an electronic device, characterized in that: The following steps are involved: forming a buffer layer having a plurality of recessed structures on the first surface; forming a passivation layer on the first surface of the buffer layer; wherein the passivation layer fills a portion of the depth of the plurality of recessed structures; forming a diamond layer on the passivation layer; wherein the diamond layer fills the remaining depth of the plurality of recessed structures; A semiconductor device layer is formed on a second surface of the buffer layer; wherein the second surface is opposite to the first surface.

7. The method for manufacturing an electronic device according to claim 6, wherein: The forming of the buffer layer with a plurality of recessed structures on the first surface specifically includes: A plurality of recessed structures are formed on one side surface of the initial buffer layer by any one or any two of a wet etching process, a dry etching process, and a photolithography process to obtain the buffer layer having a plurality of recessed structures on the first surface.

8. The method for manufacturing an electronic device according to claim 6 or 7, wherein: The forming of the diamond layer on the passivation layer specifically includes: sowing seed crystals on the passivation layer; Growing diamonds on the passivation layer seeded with the plant crystals to form an initial diamond layer; The surface of the initial diamond layer away from the passivation layer is ground and polished to form a diamond layer.

9. The method for manufacturing an electronic device according to any one of claims 6 to 8, wherein: Before forming the buffer layer having a plurality of recessed structures on the first surface, the method for manufacturing the electronic device further includes: An initial buffer layer is formed on the substrate.

10. The method for manufacturing an electronic device according to claim 9, wherein: The forming of a semiconductor device layer on the second surface of the buffer layer specifically includes: removing the substrate; forming an initial semiconductor device layer on the second surface of the buffer layer; Semiconductor devices are manufactured on the initial semiconductor device layer to form a semiconductor device layer.

11. The method for manufacturing an electronic device according to any one of claims 6 to 8, wherein: Before forming the buffer layer having a plurality of recessed structures on the first surface, the method for manufacturing the electronic device further includes: forming the initial buffer layer and the intermediate passivation layer in sequence on one side surface of the substrate; Arranging a temporary carrier on the intermediate passivation layer; The substrate is removed.

12. The method for manufacturing an electronic device according to claim 11, wherein: The forming of a semiconductor device layer on the second surface of the buffer layer specifically includes: removing the temporary carrier and the intermediate passivation layer in sequence; forming an initial semiconductor device layer on the second surface of the buffer layer; Semiconductor devices are manufactured on the initial semiconductor device layer to form a semiconductor device layer.

13. The method for manufacturing an electronic device according to any one of claims 6 to 8, characterized in that: Before forming the buffer layer having a plurality of recessed structures on the first surface, the method for manufacturing the electronic device further includes: forming the initial buffer layer, the initial semiconductor device layer and the intermediate passivation layer in sequence on one side surface of the substrate; Arranging a temporary carrier on the intermediate passivation layer; The substrate is removed.

14. The method for manufacturing an electronic device according to claim 13, wherein: The forming of a semiconductor device layer on the second surface of the buffer layer specifically includes: removing the temporary carrier and the intermediate passivation layer in sequence; Semiconductor devices are manufactured on the initial semiconductor device layer to form a semiconductor device layer.

15. The method for manufacturing an electronic device according to any one of claims 6 to 8, characterized in that: Before forming the buffer layer having a plurality of recessed structures on the first surface, the method for manufacturing the electronic device further includes: An intermediate buffer layer, an initial semiconductor device layer and an initial buffer layer are sequentially formed on the substrate.

16. The method for manufacturing an electronic device according to claim 15, wherein: The forming of a semiconductor device layer on the second surface of the buffer layer specifically includes: removing the substrate and the intermediate buffer layer in sequence; Semiconductor devices are manufactured on the initial semiconductor device layer to form a semiconductor device layer.

17. An electronic device, characterized in that: include: Diamond layer; A passivation layer, the passivation layer being stacked on one side surface of the diamond layer; The semiconductor device layer is arranged on the surface of the passivation layer away from the diamond layer; the material of at least the part of the passivation layer connected to the diamond layer is polysilicon or silicon-rich silicon nitride Si x N y ; Among them, x / y>3 / 4.

18. The electronic device according to claim 17, wherein: The material of the passivation layer is silicon nitride, and the content of silicon in the passivation layer decreases gradually in a direction away from the diamond layer.

19. The electronic device according to claim 17, wherein: The passivation layer comprises at least a first passivation layer and a second passivation layer stacked together, wherein the first passivation layer is connected to the diamond layer, and the second passivation layer is connected to the semiconductor device layer; the material of the first passivation layer is polysilicon or silicon-rich silicon nitride Si x N y ; Among them, x / y>3 / 4.

20. A method for manufacturing an electronic device, characterized in that: The following steps are involved: forming a diamond layer on the first surface of the passivation layer; forming a semiconductor device layer on the second surface of the passivation layer; The first surface is opposite to the second surface; Wherein, the material of at least the part of the passivation layer connected to the diamond layer is polysilicon or silicon-rich silicon nitride Si x N y ; Among them, x / y>3 / 4.

21. The method for manufacturing an electronic device according to claim 20, wherein: The forming of the diamond layer on the first surface of the passivation layer specifically includes: sowing seeds on the first surface of the passivation layer; growing diamonds on the first surface of the passivation layer seeded with the plant crystals to form an initial diamond layer; The surface of the initial diamond layer away from the passivation layer is ground and polished to form a diamond layer.

22. The method for manufacturing an electronic device according to claim 20 or 21, wherein: Before forming the diamond layer on the first surface of the passivation layer, the method for manufacturing the electronic device further includes: An intermediate buffer layer, an initial semiconductor device layer and the passivation layer are sequentially formed on one side surface of the substrate; the side surface of the passivation layer away from the initial semiconductor device layer is the first surface, and the side surface of the passivation layer connected to the initial semiconductor device layer is the second surface.

23. The method for manufacturing an electronic device according to claim 22, wherein: The forming of a semiconductor device layer on the second surface of the passivation layer specifically includes: removing the substrate and the intermediate buffer layer in sequence; Semiconductor devices are manufactured on the initial semiconductor device layer to form a semiconductor device layer.

24. The method for manufacturing an electronic device according to claim 20 or 21, wherein: Before forming the diamond layer on the first surface of the passivation layer, the method for manufacturing the electronic device further includes: forming the intermediate buffer layer, the initial semiconductor device layer and the intermediate passivation layer in sequence on one side surface of the substrate; Arranging a temporary carrier on the intermediate passivation layer; removing the substrate and the intermediate buffer layer; A passivation layer is formed on the initial semiconductor device layer; a surface of the passivation layer connected to the initial semiconductor device layer is the second surface, and a surface of the passivation layer away from the initial semiconductor device layer is the first surface.

25. The method for manufacturing an electronic device according to claim 20 or 21, wherein: The substrate is a silicon substrate; before forming the diamond layer on the first surface of the passivation layer, the method for manufacturing the electronic device further includes: forming the buffer layer, the initial semiconductor device layer and the intermediate passivation layer in sequence on one side surface of the substrate; Arranging a temporary carrier on the intermediate passivation layer; The thickness of the substrate is reduced to form the passivation layer.

26. The method for manufacturing an electronic device according to claim 24 or 25, characterized in that: The forming of a semiconductor device layer on the second surface of the passivation layer specifically includes: removing the temporary carrier and the intermediate passivation layer in sequence; Semiconductor devices are manufactured on the initial semiconductor device layer to form a semiconductor device layer.

27. An electronic device, characterized in that: circuit boards; The electronic device according to any one of claims 1 to 5 or 17 to 19, wherein the electronic device is arranged on the circuit board.

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