Display panel, preparation method thereof and display device

Abstract

The invention discloses a display panel, a preparation method thereof and a display device. The display panel comprises a substrate, a first electrode, a first carrier transport layer, a quantum dot light-emitting layer and a second electrode. The first electrode is arranged on one side of the substrate and comprises a main metal material and an auxiliary metal material, the main metal material comprises silver, and the absorption coefficient of the auxiliary metal material to photons is larger than that of the main metal material to photons; the first carrier transport layer is arranged on the side, away from the substrate, of the first electrode, the quantum dot light-emitting layer is arranged on the side, away from the substrate, of the first carrier transport layer, and the second electrode is arranged on the side, away from the substrate, of the quantum dot light-emitting layer. The refractive index of the first electrode formed by the composite metal material is lower than that of a conventional indium tin oxide anode, the waveguide effect of an emission QLED device can be reduced, the light extraction efficiency is improved, and therefore the performance of a display panel is improved.

Description

Technical Field

[0001] The present application belongs to the field of display technology, and in particular relates to a display panel and a manufacturing method thereof, and a display device. Background Art

[0002] Because quantum dots (QDs) have the characteristics of size-adjustable luminescence, narrow half-peak wavelength, high photoluminescence efficiency and thermal stability, quantum dot light emitting diodes (QLEDs) with quantum dots as the luminescence center have become highly promising next-generation light-emitting devices.

[0003] However, the performance of current QLED display panels needs to be improved. Summary of the Invention

[0004] The purpose of this application is to provide a display panel and its preparation method, and a display device, aiming to solve the problem that the performance of existing QLED display panels needs to be improved.

[0005] In a first aspect, the present application provides a display panel, which includes a substrate, a first electrode, a first carrier transport layer, a quantum dot light-emitting layer, and a second electrode; the first electrode is arranged on one side of the substrate, the first electrode includes a main metal material and an auxiliary metal material, the main metal material includes silver, and the absorption coefficient of the auxiliary metal material to photons is greater than the absorption coefficient of the main metal material to photons; the first carrier transport layer is arranged on the side of the first electrode facing away from the substrate, the quantum dot light-emitting layer is arranged on the side of the first carrier transport layer facing away from the substrate, and the second electrode is arranged on the side of the quantum dot light-emitting layer facing away from the substrate.

[0006] In some embodiments, the auxiliary metal material includes at least one of aluminum, copper, nickel, titanium, chromium, and molybdenum.

[0007] In some embodiments, the refractive index difference between the first electrode and the substrate is Δn1, and Δn1 satisfies the following condition: 0.1≤Δn1≤0.2.

[0008] Preferably, the refractive index difference between the first electrode and the first carrier transport layer is Δn2, and Δn2 satisfies the following condition: 0.1≤Δn2≤0.2.

[0009] In some embodiments, the substrate is made of glass;

[0010] Preferably, the refractive index of the first electrode is n1, and n1 satisfies the following condition: 1.5≤n1≤1.6.

[0011] In some embodiments, the auxiliary metal material is doped into the host metal material;

[0012] Preferably, the thickness of the first electrode is D1, and D1 satisfies the following conditions: 5 nm ≤ D1 ≤ 20 nm;

[0013] Preferably, the doping ratios C and C of the auxiliary metal material in the first electrode satisfy the following condition: 5%≤C≤10%.

[0014] In some embodiments, the first electrode includes an auxiliary metal layer and a main metal layer arranged on one side of the substrate, and the main metal layer is arranged on the side of the auxiliary metal layer facing away from the substrate; the material of the auxiliary metal layer includes auxiliary metal material, and the material of the main metal layer includes main metal material.

[0015] In some embodiments, the auxiliary metal layer has a thickness D2, and D2 satisfies the following conditions: 0.5 nm ≤ D2 ≤ 1 nm;

[0016] Preferably, the thickness of the main metal layer is D3, and D3 satisfies the following condition: 5nm≤D3≤19nm.

[0017] A second aspect of the present application provides a method for preparing a display panel, comprising the following steps:

[0018] A first electrode is formed on one side of the substrate; wherein the first electrode comprises a main metal material and an auxiliary metal material, the main metal material comprises silver, and the auxiliary metal material has a greater absorption coefficient of photons than the main metal material;

[0019] forming a first carrier transport layer on a side of the first electrode facing away from the substrate;

[0020] forming a quantum dot light-emitting layer on a side of the first carrier transport layer facing away from the substrate;

[0021] A second electrode is formed on a side of the quantum dot light-emitting layer facing away from the substrate.

[0022] In some embodiments, the step of forming a first electrode on one side of the substrate includes:

[0023] Doping auxiliary metal materials into main metal materials to form composite metal materials;

[0024] Depositing the composite metal material on one side of the substrate by physical vapor deposition to form a first electrode;

[0025] or,

[0026] Depositing an auxiliary metal material on one side of the substrate by physical vapor deposition to form an auxiliary metal layer;

[0027] The main metal material is deposited on the side of the auxiliary metal layer facing away from the substrate by using a physical vapor deposition method to form a main metal layer.

[0028] A third aspect of the present application provides a display device, comprising a display panel according to any of the above embodiments, or a display panel prepared by the preparation method according to any of the above embodiments.

[0029] According to the display panel, preparation method, and display device of the embodiments of the present application, the display panel includes a substrate, a first electrode, a first carrier transport layer, a quantum dot light-emitting layer, and a second electrode, arranged in sequence. The first electrode includes a main metal material and an auxiliary metal material, wherein the main metal material includes silver. The auxiliary metal material has a greater absorption coefficient for photons than the main metal material. The refractive index of the first electrode formed by the composite metal material is lower than that of a conventional indium tin oxide anode, which can reduce the waveguide effect of the QLED device and improve light extraction efficiency, thereby enhancing the performance of the display panel. Furthermore, Ag in the main metal material has a lower absorption coefficient and higher conductivity than the auxiliary metal material, further improving light extraction efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following briefly introduces the drawings required for use in the embodiments of the present application. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0031] Figure 1 A schematic cross-sectional view of a display panel provided in some embodiments of the present application;

[0032] Figure 2 Schematic cross-sectional views of display panels provided in some other embodiments of the present application;

[0033] Figure 3 Schematic cross-sectional views of display panels provided in some further embodiments of the present application;

[0034] Figure 4 A flowchart of a preparation method provided for some embodiments of the present application;

[0035] Figure 5 A schematic diagram of a process for preparing a display panel according to some embodiments of the present application;

[0036] Figure 6 Schematic diagram of the preparation process of display panels provided in other embodiments of the present application.

[0037] The accompanying figures are as follows:

[0038] Display panel 100; substrate 10; first electrode 20; main metal material 21; auxiliary metal material 22; auxiliary metal layer 23; main metal layer 24; first carrier transport layer 31; second carrier transport layer 32; first carrier injection layer 33; second carrier injection layer 34; quantum dot light-emitting layer 40; second electrode 50. DETAILED DESCRIPTION

[0039] The following detailed description of the embodiments of the present application is provided in conjunction with the accompanying drawings and examples. The following detailed description of the embodiments and the accompanying drawings are used to illustrate the principles of the present application, but are not intended to limit the scope of the present application, that is, the present application is not limited to the described embodiments.

[0040] In the description of this application, it should be noted that, unless otherwise specified, "multiple" means more than two; the terms "upper", "lower", "left", "right", "inside", "outside", etc., indicating directions or positional relationships, are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore cannot be understood as a limitation on this application. In addition, the terms "first", "second", "third", etc. are only used for descriptive purposes and cannot be understood as indicating or implying relative importance. "Vertical" is not strictly perpendicular, but is within the allowable error range. "Parallel" is not strictly parallel, but is within the allowable error range.

[0041] References to "embodiments" in this application mean that a particular feature, structure, or characteristic described in connection with the embodiment may be included in at least one embodiment of the application. The appearance of this phrase in various places in the specification does not necessarily refer to the same embodiment, nor does it constitute an independent or alternative embodiment that is mutually exclusive of other embodiments. It is understood, both explicitly and implicitly, by those skilled in the art that the embodiments described in this application may be combined with other embodiments.

[0042] The directional words appearing in the following description are all directions shown in the figures, and do not limit the specific structure of this application. In the description of this application, it should also be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected or indirectly connected through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to the specific circumstances.

[0043] Quantum dots, also known as semiconductor nanocrystals, are a new type of semiconductor nanomaterial. Due to quantum size effects and electrical confinement effects, they possess unique photoluminescence and electroluminescence properties. Compared to traditional organic fluorescent dyes, quantum dots possess excellent optical properties, including high quantum yield, high photochemical stability, resistance to photolysis, broad excitation, narrow emission, high color purity, and luminescence color that can be adjusted by controlling the size of the quantum dots. Currently, the first electrode of quantum dot display panels is generally made of transparent materials such as indium tin oxide, resulting in a high refractive index. This causes some light within the device to be confined within the device in the form of a waveguide and unable to be emitted, thereby reducing the light extraction efficiency of the display panel and limiting the improvement of its performance.

[0044] To solve the above problems, embodiments of the present application provide a display panel, a method for manufacturing the same, and a display device. The following describes various embodiments of the display panel, a method for manufacturing the same, and a display device with reference to the accompanying drawings.

[0045] Figure 1 Schematic cross-sectional view of a display panel provided in some embodiments of the present application. Figure 1 As shown, in a first aspect, the present application provides a display panel 100, comprising a substrate 10, a first electrode 20, a first carrier transport layer 31, a quantum dot light-emitting layer 40, and a second electrode 50. The first electrode 20 is disposed on one side of the substrate 10 and comprises a main metal material 21 and an auxiliary metal material 22. The main metal material 21 comprises silver, and the auxiliary metal material 22 has a greater absorption coefficient for photons than the main metal material 21. The first carrier transport layer 31 is disposed on a side of the first electrode 20 facing away from the substrate 10, the quantum dot light-emitting layer 40 is disposed on a side of the first carrier transport layer 31 facing away from the substrate 10, and the second electrode 50 is disposed on a side of the quantum dot light-emitting layer 40 facing away from the substrate 10.

[0046] The substrate 10 can be made of transparent materials such as glass, polyester film (PET), polycarbonate film (PC), polyetheretherketone film (PEEK), etc.

[0047] The display panel 100 of the embodiment of the present application can be a display panel 100 with an upright quantum dot light-emitting diode, in which the first electrode 20 is an anode and the second electrode 50 is a cathode. It should be noted that the display panel 100 can also be a display panel 100 with an inverted quantum dot light-emitting diode, in which the first electrode 20 is a cathode and the second electrode 50 is an anode.

[0048] The display panel 100 of the embodiment of the present application can be a bottom-emitting device or a top-emitting device. When the display panel 100 is a bottom-emitting device, the first electrode 20 is relatively thin and light-transmissive, and light from the quantum dot light-emitting layer 40 is sequentially emitted through the first carrier transport layer 31, the first electrode 20, and the substrate 10. When the display panel 100 is a top-emitting device, the first electrode 20 is relatively thick and light-impermeable, and light from the quantum dot light-emitting layer 40 is sequentially emitted through the second electrode 50.

[0049] The following uses a display panel 100 comprising an upright quantum dot light-emitting diode as an example. The first electrode 20 serves as an anode, the first carrier transport layer 31 serves as a hole transport layer, and a second carrier transport layer 32 may be provided between the quantum dot light-emitting layer 40 and the second electrode 50. The second carrier transport layer 32 serves as an electron transport layer, and the second electrode 50 serves as a cathode. When electrons and holes enter the quantum dot light-emitting layer 40 through the second carrier transport layer 32 and the first carrier transport layer 31, respectively, the quantum dots are excited by the exciton energy and emit light. Furthermore, due to the quantum confinement effect of quantum dots, the wavelength of light emitted by electron-hole recombination varies with the size of the quantum dots, resulting in quantum dots of different sizes emitting light of different colors. For example, the quantum dot light-emitting layer 40 may include blue light quantum dots, green light quantum dots or red light quantum dots. The blue light quantum dots may be ZnCdS, ZnCdS / ZnS, ZnSe / ZnS, etc.; the green light quantum dots may be ZnCdSeS, ZnCdSeS / ZnS, etc.; the red light quantum dots may be CdSe / CdS, CdSe / ZnSe, ZnCdSeS / ZnS, etc.

[0050] The materials of the first carrier transport layer 31 are Poly-TPD (polytriphenylamine), TFB (1,2,4,5-tetrakis(trifluoromethyl)benzene), PVK (polyvinylcarbazole), NPB (N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine), TAPC (4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline]), TCTA (4,4',4"-tris(carbazol-9-yl)triphenylamine), mCP (2,6-dimethoxy-1,6-diamine), and 1,2-diaminobenzene. The second carrier transport layer 32 may be made of ZnO, SnO2, ZnMgO, ZnAlO, ZnGaO, or TiO2. The second electrode 50 may be made of a low-work-function metal or an alloy thereof, such as Al, Ag, or a Mg-Ag alloy.

[0051] In conventional technology, the first electrode 20 is typically a transparent anode made of indium tin oxide (ITO), which has a relatively high refractive index that differs significantly from the refractive index of the substrate 10 and the first carrier transport layer 31. When light propagates from one medium to another, due to the difference in refractive index between the two, the light is reflected and refracted. Due to the significant difference in refractive index between the ITO transparent anode, the substrate 10, and the first carrier transport layer 31, light is easily reflected at the interfaces between the ITO transparent anode and the substrate 10, and between the ITO transparent anode and the first carrier transport layer 31, forming a waveguide structure between these layers. This waveguide effect prevents light from effectively escaping the device, trapping it within the device.

[0052] Since the main metal material 21 of the first electrode 20 of the embodiment of the present application includes silver and also includes an auxiliary metal material 22, the composite metal has a large negative dielectric constant, which can reduce the effective refractive index of the waveguide center, suppress the formation of the transverse electric mode (TE0) in the waveguide mode, reduce the waveguide transmission of light inside the device, and thus avoid waveguide losses. In addition, silver with the smallest absorption coefficient is selected as the main metal material 21 to ensure higher conductivity and low optical loss in the visible light region, while further improving the light extraction efficiency of the display panel 100. In addition, the auxiliary metal material 22 can prevent the silver of the main metal material 21 from aggregating into a 3D conductive structure, thereby improving the uniformity of the first electrode 20.

[0053] In summary, the display panel 100 of the embodiment of the present application includes a substrate 10, a first electrode 20, a first carrier transport layer 31, a quantum dot light-emitting layer 40, and a second electrode 50. The first electrode 20 includes a main metal material 21 and an auxiliary metal material 22. The main metal material 21 includes silver. The auxiliary metal material 22 has a greater absorption coefficient for photons than the main metal material 21. The refractive index of the first electrode 20 formed of the composite metal material is lower than that of a conventional indium tin oxide anode, which can reduce the waveguide effect of the emitting QLED device and improve light extraction efficiency, thereby enhancing the performance of the display panel 100. Furthermore, Ag in the main metal material has a lower absorption coefficient and higher electrical conductivity than the auxiliary metal material, further improving light extraction efficiency.

[0054] Figure 2 Schematic cross-sectional view of display panels provided in some other embodiments of the present application. Figure 2 As shown, optionally, the display panel 100 further includes a first carrier injection layer 33 and a second carrier injection layer 34, the first carrier injection layer 33 is arranged between the first electrode 20 and the first carrier transport layer 31, and the second carrier injection layer 34 is arranged between the second carrier transport layer 32 and the second electrode 50.

[0055] If the first carrier transport layer 31 is a hole transport layer, the first carrier injection layer 33 is a hole injection layer. The hole injection layer can increase the concentration of holes and improve the luminous efficiency. The second carrier injection layer 34 is an electron injection layer, which can increase the concentration of electrons and improve the luminous efficiency.

[0056] In some embodiments, the auxiliary metal material 22 includes at least one of aluminum, copper, nickel, titanium, chromium, and molybdenum. These materials have high electrical conductivity, high uniformity during film formation, and low photon absorption coefficient.

[0057] In some embodiments, the refractive index difference between the first electrode 20 and the substrate 10 is Δn1, where Δn1 satisfies the following condition: 0.1≤Δn1≤0.2. Matching the refractive indices of the first electrode 20 and the substrate 10, and ensuring the refractive index difference between the two is within a suitable range, can reduce waveguide losses and improve light extraction efficiency of the display panel 100.

[0058] Preferably, the refractive index difference between the first electrode 20 and the first carrier transport layer 31 is Δn2, where Δn2 satisfies the following condition: 0.1≤Δn2≤0.2. Matching the refractive indices of the first electrode 20 and the first carrier transport layer 31, and ensuring that the refractive index difference between the two is within a suitable range, can reduce waveguide losses and improve light extraction efficiency of the display panel 100.

[0059] In some embodiments, the substrate 10 is made of glass. Glass has a very flat surface, which helps ensure that the material of the first electrode 20 is evenly distributed on the substrate 10, thereby improving the uniformity of the first electrode 20. Furthermore, glass has high light transmittance, which can further improve the light extraction efficiency of the bottom-emission display panel 100.

[0060] Preferably, the refractive index of the first electrode 20 is n1, and n1 satisfies the following condition: 1.5≤n1≤1.6, which is close to the refractive index of the glass substrate 10, further reducing the waveguide effect at the interface between the first electrode 20 and the substrate 10 and improving the light extraction efficiency of the display panel 100.

[0061] Figure 1 A schematic cross-sectional view of a display panel provided in some embodiments of the present application; Figure 2 Schematic cross-sectional views of display panels provided in some other embodiments of the present application.

[0062] Please refer to Figure 1 and Figure 2 In some embodiments, the auxiliary metal material 22 is doped into the main metal material 21 .

[0063] The auxiliary metal material 22 can be first doped into the main metal material 21 to form a mixed material, and then the mixed material is deposited on the substrate 10 through a physical vapor deposition process to form a first electrode 20. The preparation process is simple and can improve the production efficiency of the display panel 100.

[0064] Preferably, the thickness of the first electrode 20 is D1, where D1 satisfies the following condition: 5 nm ≤ D1 ≤ 20 nm. D1 can be any value between 5 nm and 20 nm, for example, 5 nm, 7 nm, 9 nm, 12 nm, 14 nm, 16 nm, 18 nm, 20 nm, etc. The thin thickness of the first electrode 20 ensures high transmittance, effectively reduces the waveguide thickness, suppresses the formation of the transverse magnetic mode (TM1) in the waveguide mode of the display panel 100, and improves light extraction efficiency.

[0065] Preferably, the doping ratios C and C of the auxiliary metal material 22 in the first electrode 20 satisfy the following condition: 5%≤C≤10%. C can be any value between 5% and 10%, for example, C can be 5%, 6%, 7%, 8%, 9%, 10%, etc.

[0066] The doping ratio refers to the proportion of the mass of the auxiliary metal material 22 to the total mass of the first electrode 20. If the doping ratio of the auxiliary metal material 22 in the first electrode 20 is too low, the uniformity of the first electrode 20 will be poor; if the doping ratio of the auxiliary metal material 22 in the first electrode 20 is too high, the absorption coefficient of the first electrode 20 will increase. In the embodiment of the present application, the doping ratio of the auxiliary metal material 22 in the first electrode 20 is within an appropriate range, which can not only ensure the uniformity of the first electrode 20, but also reduce the absorption rate of the first electrode 20, thereby improving the light extraction efficiency of the display panel 100.

[0067] Figure 3 Schematic cross-sectional view of a display panel provided in some embodiments of the present application. Figure 3 As shown, in other embodiments, the first electrode 20 includes an auxiliary metal layer 23 and a main metal layer 24 arranged on one side of the substrate 10, and the main metal layer 24 is arranged on the side of the auxiliary metal layer 23 facing away from the substrate 10; the material of the auxiliary metal layer 23 includes an auxiliary metal material 22, and the material of the main metal layer 24 includes a main metal material 21.

[0068] The auxiliary metal material 22 of the auxiliary metal layer 23 may include one or more of aluminum, copper, nickel, titanium, chromium and molybdenum. These materials have high electrical conductivity, high uniformity during film formation, and low photon absorption coefficient.

[0069] In the embodiment of the present application, an auxiliary metal layer 23 may be first formed on the substrate 10 by physical vapor deposition, and then a main metal layer 24 may be formed on the auxiliary metal layer 23 by physical vapor deposition. The auxiliary metal layer 23 can prevent the silver in the main metal layer 24 from aggregating into a 3D conductive structure, thereby improving the uniformity of the first electrode 20.

[0070] In some embodiments, the auxiliary metal layer 23 has a thickness D2, where D2 satisfies the following condition: 0.5 nm ≤ D2 ≤ 1 nm. D2 can be any value between 0.5 nm and 1 nm, for example, D2 can be 0.5 nm, 0.6 nm, 0.7 nm, 0.8 nm, 0.9 nm, 1 nm, etc.

[0071] If the thickness of the auxiliary metal layer 23 is too small, the uniformity of the first electrode 20 cannot be improved; if the thickness of the auxiliary metal layer 23 is too large, the light extraction efficiency of the display panel 100 will be reduced. In the embodiment of the present application, the thickness of the auxiliary metal layer 23 is moderate, which can improve the uniformity of the first electrode 20 and the light extraction efficiency of the display panel 100.

[0072] Preferably, the thickness of the main metal layer 24 is D3, and D3 satisfies the following condition: 5nm≤D3≤19nm. D3 can be any value between 5nm and 19nm, for example, D3 can be 5nm, 7nm, 8nm, 9nm, 10nm, 12nm, 14nm, 19nm, etc.

[0073] Similarly, if the thickness of the bulk metal layer 24 is too thin, the uniformity of the first electrode 20 will be reduced; if the thickness of the bulk metal layer 24 is too thick, the thickness of the display panel 100 will increase, making it difficult to achieve a thin design for the display panel 100. The bulk metal layer 24 of the embodiment of the present application has an appropriate thickness, which can both improve the light extraction efficiency of the display panel 100 and facilitate the thin design of the display panel 100.

[0074] Figure 4 A flowchart of a preparation method provided for some embodiments of the present application.

[0075] Figure 5 Schematic diagram of the preparation process of the display panel provided in some embodiments of the present application. Figure 4 and Figure 5 As shown, S10, a first electrode 20 is formed on one side of the substrate 10; wherein the first electrode 20 includes a main metal material 21 and an auxiliary metal material 22, the main metal material 21 includes silver, and the absorption coefficient of the auxiliary metal material 22 to photons is greater than the absorption coefficient of the main metal material 21 to photons.

[0076] Since the main metal material 21 of the first electrode 20 of the embodiment of the present application includes silver and also includes an auxiliary metal material 22, the composite metal has a large negative dielectric constant, which can reduce the effective refractive index of the waveguide center, inhibit the formation of the transverse electric mode (TE0) in the waveguide mode, reduce the waveguide transmission of light inside the device, and thus avoid waveguide losses. Moreover, silver with the smallest absorption coefficient is selected as the main metal material 21, which has higher conductivity and can further improve the light extraction efficiency of the display panel 100. In addition, the auxiliary metal material 22 can prevent the silver of the main metal material 21 from aggregating into a 3D conductive structure, thereby improving the uniformity of the first electrode 20.

[0077] S20 , forming a first carrier transport layer 31 on a side of the first electrode 20 facing away from the substrate 10 .

[0078] Taking the display panel 100 as an upright quantum dot light emitting diode display panel 100 as an example, the first electrode 20 is an anode, and the first carrier transport layer 31 is a hole transport layer.

[0079] S30 , forming a quantum dot light-emitting layer 40 on a side of the first carrier transport layer 31 facing away from the substrate 10 .

[0080] When electrons and holes enter the quantum dot light-emitting layer 40 through the second carrier transport layer 32 and the first carrier transport layer 31 respectively, the quantum dots are excited by the exciton energy and emit light.

[0081] S40 , forming a second electrode 50 on a side of the quantum dot light-emitting layer 40 facing away from the substrate 10 .

[0082] Taking the display panel 100 as an example of a display panel 100 with an upright quantum dot light emitting diode, the first electrode 20 is an anode, and the second electrode 50 is a cathode.

[0083] The manufacturing method of the display panel 100 in the embodiment of the present application is simple in process, and the manufactured display panel 100 has low waveguide effect and high light extraction efficiency.

[0084] In some embodiments, the step of forming the first electrode 20 on one side of the substrate 10 includes:

[0085] S11. Add the auxiliary metal material 22 into the main metal material 21 to form a composite metal material.

[0086] The auxiliary metal material 22 includes at least one of aluminum, copper, nickel, titanium, chromium, and molybdenum. These materials have high electrical conductivity, high uniformity during film formation, and low photon absorption coefficient.

[0087] S12 , depositing the composite metal material on one side of the substrate 10 by physical vapor deposition to form the first electrode 20 .

[0088] A uniform and dense film can be formed by physical vapor deposition, thereby effectively avoiding the problem of poor morphology of the indium tin oxide thin film anode produced by the instability of magnetron sputtering technology.

[0089] or, Figure 6 Schematic diagram of the preparation process of display panels provided in some other embodiments of the present application. Figure 6 As shown, in some other embodiments, the step of forming the first electrode 20 on one side of the substrate 10 includes:

[0090] S11 , depositing an auxiliary metal material 22 on one side of the substrate 10 by physical vapor deposition to form an auxiliary metal layer 23 .

[0091] S12 , using physical vapor deposition to deposit the main metal material 21 on the side of the auxiliary metal layer 23 facing away from the substrate 10 to form a main metal layer 24 .

[0092] In the embodiment of the present application, an auxiliary metal layer 23 is first formed on the substrate 10 by physical vapor deposition, and then a main metal layer 24 is formed on the auxiliary metal layer 23 by physical vapor deposition. The auxiliary metal layer 23 can prevent the silver in the main metal layer 24 from aggregating into a 3D conductive structure, thereby improving the uniformity of the first electrode 20.

[0093] In a third aspect, the present application provides a display device comprising the display panel 100 of any of the aforementioned embodiments, or a display panel 100 produced by the production method of any of the aforementioned embodiments. Because the display device employs all of the technical solutions of all of the aforementioned embodiments, it at least possesses all of the beneficial effects brought about by the technical solutions of the aforementioned embodiments, which will not be detailed here.

[0094] The display device may be any device having a display function, for example, a mobile device such as a mobile phone, a tablet computer, a laptop computer, a PDA, an in-vehicle electronic device, a wearable device, an ultra-mobile personal computer (UMPC), a netbook, or a personal digital assistant (PDA); it may also be a non-mobile device such as a personal computer (PC), a television (TV), an ATM, or an kiosks.

[0095] The above description is merely a specific embodiment of the present application, but the scope of protection of the present application is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in the present application, and such modifications or substitutions should be included in the scope of protection of the present application. Therefore, the scope of protection of the present application should be based on the scope of protection of the claims.

Claims

1. A display panel, characterized in that: include: substrate; a first electrode disposed on one side of the substrate, the first electrode comprising a main metal material and an auxiliary metal material, the main metal material comprising silver, and an absorption coefficient of the auxiliary metal material to photons being greater than an absorption coefficient of the main metal material to photons; a first carrier transport layer, disposed on a side of the first electrode facing away from the substrate; a quantum dot light-emitting layer, disposed on a side of the first carrier transport layer facing away from the substrate; The second electrode is arranged on a side of the quantum dot light-emitting layer away from the substrate.

2. The display panel according to claim 1, wherein: The auxiliary metal material includes at least one of aluminum, copper, nickel, titanium, chromium and molybdenum.

3. The display panel according to claim 1, wherein: The refractive index difference between the first electrode and the substrate is Δn1, and Δn1 satisfies the following condition: 0.1≤Δn1≤0.2; Preferably, the refractive index difference between the first electrode and the first carrier transport layer is Δn2, and Δn2 satisfies the following condition: 0.1≤Δn2≤0.

2.

4. The display panel according to claim 1, wherein: The material of the substrate is glass; Preferably, the refractive index of the first electrode is n1, and n1 satisfies the following condition: 1.5≤n1≤1.

6.

5. The display panel according to claim 1, wherein: The auxiliary metal material is doped into the main metal material; Preferably, the thickness of the first electrode is D1, and D1 satisfies the following condition: 5nm≤D1≤20nm; Preferably, the doping ratio C of the auxiliary metal material in the first electrode satisfies the following condition: 5%≤C≤10%.

6. The display panel according to claim 1, wherein: The first electrode includes an auxiliary metal layer and a main metal layer arranged on one side of the substrate, and the main metal layer is arranged on the side of the auxiliary metal layer away from the substrate; the material of the auxiliary metal layer includes the auxiliary metal material, and the material of the main metal layer includes the main metal material.

7. The display panel according to claim 6, wherein: The thickness of the auxiliary metal layer is D2, and D2 satisfies the following condition: 0.5nm≤D2≤1nm; Preferably, the thickness of the main metal layer is D3, and D3 satisfies the following condition: 5nm≤D3≤19nm.

8. A method for preparing a display panel, characterized in that: The following steps are involved: A first electrode is formed on one side of the substrate; wherein the first electrode comprises a main metal material and an auxiliary metal material, the main metal material comprises silver, and the auxiliary metal material has a greater absorption coefficient of photons than the main metal material; forming a first carrier transport layer on a side of the first electrode facing away from the substrate; forming a quantum dot light-emitting layer on a side of the first carrier transport layer facing away from the substrate; A second electrode is formed on a side of the quantum dot light-emitting layer facing away from the substrate.

9. The preparation method according to claim 8, characterized in that The step of forming a first electrode on one side of the substrate includes: doping the auxiliary metal material into the main metal material to form a composite metal material; Depositing the composite metal material on one side of the substrate using a physical vapor deposition method to form the first electrode; or, Depositing the auxiliary metal material on one side of the substrate by physical vapor deposition to form an auxiliary metal layer; The main metal material is deposited on the side of the auxiliary metal layer facing away from the substrate by using a physical vapor deposition method to form a main metal layer.

10. A display device, characterized in that: The invention comprises the display panel according to any one of claims 1 to 7, or the display panel prepared by the preparation method according to claim 8 or 9.

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