Vaporization system control method, semiconductor device manufacturing method, substrate processing apparatus, vaporization system, and program

Abstract

The present invention provides a technique for implementing: a step (a) for supplying a liquid raw material into a gasification container; a step (b) for adjusting the pressure so as to depressurize the inside of the gasification container at the point in time at which (a) ends or after a first predetermined time has elapsed from the point in time; (c) after (b), maintaining a state in which the liquid raw material is gasified and the pressure adjustment in the gasification container is stopped; and (d) after (c), supplying a vaporized gas generated by vaporizing the liquid raw material in the vaporizing container into a processing container for processing the substrate.

Description

Technical Field

[0001] The present invention relates to a control method of a vaporization system, a method for manufacturing a semiconductor device, a substrate processing device, a vaporization system, and a program. Background Art

[0002] Patent Document 1 discloses a vaporization system that generates vaporized gas by vaporizing a liquid raw material stored in a vaporization container, and a substrate processing apparatus that processes a substrate using the generated vaporized gas.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: WO2018 / 056346 Summary of the Invention

[0006] Problems to be solved by the invention

[0007] When the amount of liquid raw material stored in a vaporizer decreases, the vaporizer may need to be replenished. However, due to pressure fluctuations within the vaporizer caused by the injection of the liquid raw material, poor vaporization of the liquid raw material can occur. The present invention provides a technique for suppressing poor vaporization of the liquid raw material that can occur when the liquid raw material is injected into a vaporizer.

[0008] Solutions to Problems

[0009] According to the present disclosure, a technology is provided for implementing the following steps: step (a), supplying a liquid raw material into a vaporization container; step (b), adjusting the pressure in the vaporization container by reducing the pressure at the time point when (a) ends or after a first predetermined time has passed from the time point; step (c), after (b), maintaining the state of vaporizing the liquid raw material and stopping the pressure adjustment in the vaporization container; and step (d), after (c), supplying the vaporized gas generated by vaporizing the liquid raw material in the vaporization container to a processing container for processing a substrate.

[0010] Effects of the Invention

[0011] According to the present disclosure, it is possible to suppress the poor vaporization of the liquid raw material that may occur due to the injection of the liquid raw material into the gas container. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 This is a schematic structural diagram of a vertical processing furnace of a substrate processing apparatus that can be preferably used in one embodiment of the present disclosure, and shows a processing furnace 202 portion in a vertical cross-sectional view.

[0013] Figure 2This is a schematic structural diagram of a vertical processing furnace of a substrate processing device that can be appropriately used in one embodiment of the present disclosure. Figure 1 The L-line cross-sectional view shows a portion of the processing furnace 202 .

[0014] Figure 3 This is a diagram showing the configuration of a vaporization system included in a substrate processing apparatus that can be preferably used in one embodiment of the present disclosure.

[0015] Figure 4 This is a schematic configuration diagram of a controller 121 of a substrate processing apparatus that can be preferably used in one embodiment of the present disclosure, and shows a control system of the controller 121 in a block diagram.

[0016] Figure 5 This is a diagram showing a film formation sequence when a film formation process is performed on a wafer in one embodiment of the present disclosure.

[0017] Figure 6 This is a diagram showing the relationship between the passage of time and the pressure in the vaporization container in one embodiment of the present disclosure.

[0018] Figure 7 This is a diagram showing the relationship between the passage of time and the pressure in the vaporization container in another embodiment of the present disclosure.

[0019] Figure 8 This is a graph showing the relationship between the passage of time and the pressure in the vaporization container in a comparative example of the present disclosure.

[0020] Figure 9 This is a diagram showing the configuration of a vaporization system included in a substrate processing apparatus that can be preferably used in another embodiment of the present disclosure. DETAILED DESCRIPTION

[0021] <One aspect of the present disclosure>

[0022] Hereinafter, one embodiment of the present disclosure will be mainly described with reference to Figures 1 to 6 、 Figure 8 The following description will be given below. The drawings used in the following description are schematic, and the dimensional relationships and ratios of the elements shown in the drawings may not necessarily be consistent with the actual dimensions. Furthermore, the dimensional relationships and ratios of the elements may not necessarily be consistent across multiple drawings.

[0023] (1) Structure of substrate processing apparatus

[0024] like Figure 1 As shown, it has a gasification system described later (see Figure 3) includes a processing furnace 202 for processing wafers 200 serving as substrates. The processing furnace 202 includes a cylindrical heater 207 extending vertically. The heater 207 is supported by a heater base (not shown) serving as a holding plate. Furthermore, the heater 207 heats the interior of a processing chamber 201, described later, to a predetermined temperature.

[0025] Furthermore, a processing tube 203, serving as a processing unit and being concentric with the heater 207, is disposed inside the heater 207. Furthermore, a processing chamber 201 is formed within the processing tube 203 for processing multiple wafers 200. Specifically, multiple wafers 200 (e.g., 25 to 200) are stacked vertically on a wafer boat 217, serving as a substrate support. The wafers 200, loaded on the wafer boat 217, are then disposed within the processing chamber 201. A cylindrical heat-insulating tube 218 is disposed below the wafer boat 217.

[0026] Furthermore, a cylindrical manifold (inlet flange) 209 is provided below the processing tube 203. The upper end of the manifold 209 faces the lower end of the processing tube 203, and the manifold 209 supports the processing tube 203 via an O-ring 220 as a sealing member.

[0027] Furthermore, in the processing chamber 201, nozzles 410 and 420 are disposed vertically between the wall of the processing tube 203 and the plurality of wafers 200 loaded on the wafer boat 217. Furthermore, multiple supply holes 410 a and 420 a for supplying gas are formed in the nozzles 410 and 420, respectively, within a range horizontally facing the wafers 200. Thus, the gas ejected from the supply holes 410 a and 420 a flows toward the wafers 200.

[0028] Furthermore, the lower end portions of the nozzles 410 and 420 penetrate the side wall of the manifold 209, and the lower end portions of the nozzles 410 and 420 protrude outside the manifold 209. Furthermore, the lower end portions of the nozzles 410 and 420 are connected to gas supply pipes 310 and 320 as gas supply lines, respectively.

[0029] Gas supply pipes 310 and 320 are provided with flow controllers (flow control units), namely mass flow controllers (MFCs) 312 and 322, and on-off valves, namely valves 314 and 324, respectively, in order from the upstream side in the flow direction of the gas flowing along the gas supply pipes 310 and 320 (hereinafter referred to as the "gas flow direction"). Furthermore, the ends of gas supply pipes 510 and 520, serving as gas supply lines for supplying inert gas, are connected to the gas supply pipes 310 and 320, respectively, downstream of the valves 314 and 324 in the gas flow direction. MFCs 512 and 522, and valves 514 and 524 are provided in order from the upstream side in the flow direction of the gas flowing along the gas supply pipes 510 and 520, respectively.

[0030] The raw material gas, which is generated as a process gas by vaporizing a liquid raw material in a storage tank 610 (described later), is supplied from the gas supply pipe 310 to the processing chamber 201 via the MFC 312, the valve 314, and the nozzle 410. The gas supply pipe 310, the MFC 312, and the valve 314 constitute a raw material gas supply system or a raw material gas supply unit (hereinafter, the "supply system" may also be referred to as the "supply unit"). The nozzle 410 may also be included in the raw material gas supply system. In addition, the gasification system 500 (described later) may also be included in the raw material gas supply system. The raw material gas supply system may also be referred to as a raw material supply system or a gasification gas supply system.

[0031] On the other hand, the reaction gas as the process gas is supplied from the gas supply pipe 320 toward the process chamber 201 via the MFC 322 , the valve 324 , and the nozzle 420 .

[0032] When the reaction gas (reactant) is supplied from the gas supply pipe 320, the reaction gas supply system (reactant supply system) is mainly composed of the gas supply pipe 320, the MFC 322, and the valve 324. The nozzle 420 may also be included in the reaction gas supply system. When the reaction gas flows out of the nozzle 420, the nozzle 420 may also be referred to as a reaction gas nozzle.

[0033] Furthermore, the inert gas is supplied from the gas supply pipes 510 and 520 toward the processing chamber 201 via the MFCs 512 and 522 , the valves 514 and 524 , and the nozzles 410 and 420 .

[0034] The inert gas supply system is mainly composed of the gas supply pipes 510 and 520, the MFCs 512 and 522, and the valves 514 and 325.

[0035] On the other hand, one end of an exhaust pipe 231, which serves as an exhaust path for exhausting the atmosphere of the processing chamber 201, is connected to the wall of the manifold 209. Installed on the exhaust pipe 231 are a pressure sensor 245, which serves as a pressure detector (pressure detection unit) for detecting the pressure within the processing chamber 201, and an APC (Auto Pressure Controller) valve 243, which serves as an exhaust valve (pressure adjustment unit). A vacuum pump 246, serving as a vacuum exhaust device, is installed at the end of the exhaust pipe 231.

[0036] The APC valve 243 is configured as a valve that, when the vacuum pump 246 is in operation, opens and closes to enable and disable vacuum evacuation of the processing chamber 201. Furthermore, when the vacuum pump 246 is in operation, the valve opening is adjusted based on pressure information detected by the pressure sensor 245 to adjust the pressure in the processing chamber 201. The exhaust system is primarily composed of the exhaust pipe 231, the APC valve 243, and the pressure sensor 245. The vacuum pump 246 may also be included in the exhaust system.

[0037] Below the manifold 209, a sealing cap 219, serving as a furnace port cover, is installed to airtightly seal the lower opening of the manifold 209. The sealing cap 219 is configured to abut against the lower end of the manifold 209 from the vertically downward side via an O-ring 220. A rotation mechanism 267 is installed on the opposite side of the processing chamber 201 from the sealing cap 219 to rotate the wafer boat 217, described later. A rotation shaft 255 of the rotation mechanism 267 is connected to the wafer boat 217. The rotation mechanism 267 is configured to rotate the wafers 200 by rotating the wafer boat 217.

[0038] The seal cover 219 is configured to be raised and lowered vertically by a boat elevator 115, which serves as a lifting mechanism and is vertically mounted outside the processing tube 203. The boat elevator 115 is configured to move the wafer boat 217 into and out of the processing chamber 201 by raising and lowering the seal cover 219. The boat elevator 115 serves as a transport device that transports the wafer boat 217, or wafers 200, into and out of the processing chamber 201. Furthermore, a gate 219s, serving as a furnace port cover, is provided below the manifold 209. While the seal cover 219 is lowered by the boat elevator 115, it hermetically seals the lower end opening of the manifold 209 via an O-ring 220c. The opening and closing of the gate 219s is controlled by a gate opening and closing mechanism 115s.

[0039] Furthermore, a temperature sensor 263 is provided in the processing chamber 201 as a temperature detector. The power supply to the heater 207 is adjusted based on the temperature information detected by the temperature sensor 263, thereby achieving a desired temperature distribution in the processing chamber 201. Like the nozzles 410 and 420, the temperature sensor 263 is located along the inner wall of the processing tube 203.

[0040] [Gasification system]

[0041] Next, the gasification system 500 is used Figure 3 The vaporization system 500 vaporizes the liquid raw material stored in the storage tank 610 to generate vaporized gas as the raw material gas, and supplies the vaporized gas into the processing chamber 201 via the gas supply pipe 310. The vaporization system 500 includes a vaporization unit 600, a replenishing unit 700, and a pressure regulating unit 800, which will be described later. The vaporization system 500 can also be considered to include at least a portion of the raw material gas supply system.

[0042] [Gasification Unit 600]

[0043] The vaporization section 600 includes: a storage tank 610 as a vaporization container, which stores liquid raw materials that are converted into raw gas by vaporization; a heater 630 as a heating section (heating device), which vaporizes the liquid raw materials by heating the storage tank 610; and a pressure sensor 640, which detects the pressure inside the storage tank 610.

[0044] Storage tank 610 is formed, for example, in a rectangular parallelepiped or cylindrical shape. The storage space formed within storage tank 610 is sealed from the outside by closing valves 620 and 720. The lower end of gas supply pipe 310 is connected to penetrate the top wall of storage tank 610 and communicate with the storage space.

[0045] The liquid raw material is vaporized in the storage tank 610 with the valves 620 and 720 closed, whereby the vaporized gas is filled in the storage tank 610. The filled vaporized gas is pressure-fed toward the gas supply pipe 310 by the pressure in the storage tank 610.

[0046] In the vaporization unit 600 of this embodiment, no other gas, such as a carrier gas, is supplied to the storage tank 610. Therefore, the pressure increase in the storage tank 610 is mainly caused by the vaporized gas generated by the vaporization of the liquid raw material and the supply (replenishment) of the liquid raw material into the storage tank 610, which will be described later.

[0047] [Supplementary Section 700]

[0048] Replenishment section 700, serving as a liquid raw material supply system, replenishes storage tank 610 with liquid raw material pressure-fed from replenishment tank 760. It includes a liquid supply pipe 754, serving as a liquid raw material supply line, through which the liquid raw material flows, and an on-off valve, i.e., valve 720. Alternatively, replenishment tank 760, serving as a source of liquid raw material, may be incorporated into replenishment section 700. Furthermore, valve 720 may be configured to adjust the flow rate (or pressure) of the liquid raw material (not limited to fully open / closed) by controlling its opening degree using control section 121. Valve 720 is closed when liquid raw material is not being replenished.

[0049] Liquid supply pipe 754 is connected so as to pass through the top wall of storage tank 610, and one end of the liquid supply pipe is connected to the interior of storage tank 610. By opening valve 720, the liquid raw material in liquid supply pipe 754 is pressure-fed into storage tank 610. At this time, valve 620 is closed, and the liquid raw material is pressure-fed into the sealed space of storage tank 610, which may cause the pressure in storage tank 610 to rise rapidly.

[0050] Replenishing tank 760 is disposed outside storage tank 610 and connected to the other end of liquid supply pipe 754. A pressure-feeding pipe 761 is connected to the upper portion of replenishing tank 760. Pressurized gas is fed into replenishing tank 760 through pressure-feeding pipe 761, and the liquid raw material stored in replenishing tank 760 is pressurized and fed into liquid supply pipe 754 by the pressure within replenishing tank 760.

[0051] The pressure in the replenishment tank 760 is higher than the pressure in the storage tank 610. For example, the pressure in the storage tank 610 is 100 Pa to 10,000 Pa, and the pressure from the replenishment tank 760 is 0.1 MPa to 10 MPa.

[0052] [Pressure adjustment unit 800]

[0053] The pressure regulating unit 800 includes an exhaust pipe 810, serving as an exhaust line, one end of which is directly or indirectly connected to the storage tank 610; a valve 820, serving as an on-off valve, disposed on the exhaust pipe 810; and an exhaust pump 830, serving as an exhaust device, connected to the exhaust pipe 810 downstream of the valve 820. In this embodiment, the exhaust pipe 810 is connected to the gas supply pipe 310, downstream of the valve 620, and is connected to the interior of the storage tank 610 via the gas supply pipe 310. In this case, the valve 620 can also be considered a component of the pressure regulating unit 800.

[0054] In addition, as other methods, Figure 9 As shown, the exhaust pipe 810 may also be provided to be directly connected to the storage tank 610 without passing through the gas supply pipe 310 .

[0055] Alternatively, instead of providing the vacuum pump 830, the exhaust pipe 810 may be connected to the exhaust pipe 231 (downstream of the APC valve 243), and exhaust may be performed from the exhaust pipe 810 using the vacuum pump 246. Alternatively, instead of providing the vacuum pump 830, the exhaust pipe 810 may be connected to an exhaust line provided in a facility where the substrate processing apparatus 10 is installed, and exhaust may be performed from the exhaust pipe 810 via the exhaust line.

[0056] Furthermore, valve 820 may be configured to adjust the exhaust gas flow rate (exhaust speed) by controlling its opening degree, rather than being limited to an opening and closing operation (fully open / fully closed operation), by the controller 121. When pressure adjustment within the storage tank 610, described later, is not being performed, valve 820 is closed.

[0057] Furthermore, in addition to valve 820, exhaust pipe 810 may be further provided with an MFC configured to adjust the exhaust flow rate within exhaust pipe 810. By controlling the flow rate of the MFC using controller 121, the exhaust speed can be adjusted when regulating the pressure within storage tank 610.

[0058] Next, the control unit 121 as the control unit included in the substrate processing apparatus 10 will be described. Figure 4 As shown, the control unit 121 is configured as a computer and includes a CPU (Central Processing Unit) 121a, RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d. The RAM 121b, storage device 121c, and I / O port 121d are configured to exchange data with the CPU 121a via an internal bus 121e. An input / output device 122, such as a touch panel, is connected to the control unit 121.

[0059] The storage device 121c is composed of, for example, a flash memory or a hard disk drive (HDD). The storage device 121c readablely stores various programs such as a control program for controlling the operation of the substrate processing apparatus, a liquid raw material replenishment program (described later), and data used to execute each program. The RAM 121b serves as a memory area (work area) that temporarily stores programs and data read by the CPU 121a.

[0060] The I / O port 121d is connected to MFCs 312, 322, 512, 522, valves 314, 324, 514, 524, 620, 720, 820, pressure sensors 245, 640, APC valve 243, vacuum pumps 246, 830, temperature sensor 263, heaters 207, 630, rotating mechanism 267, wafer boat elevator 115, gate opening and closing mechanism 115s, etc.

[0061] The CPU 121 a is configured to read out a control program from the storage device 121 c and execute it, and to read out data from the storage device 121 c in response to input of an operation command from the input / output device 122 or the like.

[0062] The CPU 121a is configured to control the flow adjustment actions of various gases performed by the MFCs 312, 322, 512, and 522, the opening and closing actions of the valves 314, 324, 514, 524, 620, 720, and 820, the opening and closing actions of the APC valve 243, the pressure adjustment actions of the APC valve 243 based on the pressure sensor 245, the opening and closing actions of the valves 620 and 820 based on the pressure sensor 640, the start and stop of the vacuum pumps 246 and 830, the temperature adjustment actions of the heater 207 based on the temperature sensor 263, the rotation and rotation speed adjustment actions of the crystal boat 217 performed by the rotating mechanism 267, the lifting and lowering actions of the crystal boat 217 performed by the crystal boat elevator 115, the opening and closing actions of the gate 219s performed by the gate opening and closing mechanism 115s, etc. In addition, another control unit may be provided separately from the control unit 121 and configured to control the above-mentioned controlled elements constituting the gasification system 500 .

[0063] The control unit 121 is configured by installing a program stored in an external storage device (eg, a magnetic disk such as a tape or hard disk, an optical disk such as a CD or DVD, or a semiconductor memory such as a USB memory or a memory card) 123 into a computer.

[0064] Storage device 121c or external storage device 123 constitutes a computer-readable storage medium. Hereinafter, these are collectively referred to as storage medium. In this specification, the term "storage medium" may include only storage device 121c, only external storage device 123, or both. Furthermore, providing a program (program product) to a computer may be performed using communication means such as the Internet or a dedicated line, rather than using external storage device 123.

[0065] (2) Substrate processing

[0066] Next, a substrate processing method for processing a substrate using the substrate processing apparatus 10 will be described as a step in the semiconductor device manufacturing process. Furthermore, a method for controlling the vaporization system 500 for replenishing the liquid raw material into the storage tank 610 will be described as a step in the substrate processing process. The operation of each component of the substrate processing apparatus 10 is controlled by the control unit 121.

[0067] First, a sequence example of forming a film on the wafer 200 using the substrate processing apparatus 10 is described. Figure 5 In this embodiment, a processing chamber 201 containing a plurality of wafers 200 in a loaded state is heated at a predetermined temperature. Furthermore, a raw material gas supply process is performed a predetermined number of times (n times, where n is an integer greater than or equal to 1). The raw material gas supply process is performed by supplying a raw material gas containing a predetermined element to the processing chamber 201 from the supply hole 410a of the nozzle 410, and the reactive gas supply process is performed by supplying a reactive gas to the processing chamber 201 from the supply hole 420a of the nozzle 420. Thus, a film containing a predetermined element is formed on the wafer 200. The predetermined number of times (n times) here refers to one batch of film forming processes, which has been set in advance.

[0068] [Stowage / Move-in]

[0069] First, a plurality of wafers 200 are loaded on the wafer boat 217. The gate opening and closing mechanism 115s is used to move the gate 219s to open the lower end of the manifold 209. Figure 1 As shown, the boat 217 carrying a plurality of wafers 200 is lifted by the boat elevator 115 and carried into the processing chamber 201. In this state, the seal cap 219 seals the lower end of the manifold 209.

[0070] [Pressure / Temperature Adjustment]

[0071] Next, vacuum pump 246 is used to evacuate the processing chamber 201 to the desired pressure (vacuum level). At this time, the pressure of the processing chamber 201 is measured by pressure sensor 245, and the APC valve 243 performs feedback control (pressure adjustment) based on the measured pressure information. The vacuum pump 246 remains in operation at least until the processing of the wafers 200 is completed.

[0072] Furthermore, the processing chamber 201 is heated to a desired temperature by the heater 207. The heating of the processing chamber 201 by the heater 207 is continued at least until the processing of the wafers 200 is completed.

[0073] Furthermore, the wafer boat 217 and the wafers 200 are rotated by the rotation mechanism 267. The rotation of the wafer boat 217 and the wafers 200 by the rotation mechanism 267 is continuously performed at least until the processing of the wafers 200 is completed.

[0074] [Film Formation Process (An Example of Substrate Processing)]

[0075] [Raw material gas supply process]

[0076] Next, valves 314 and 620 are opened, and the vaporized gas in the storage tank 610, i.e., the raw material gas, is supplied into the processing chamber 201 via the gas supply pipe 310. As the raw material gas, one or more gases obtained by vaporizing the liquid raw material in the storage tank 610 can be used. It is to be noted that valve 820 of the pressure regulating unit 800 is always closed during the period when the liquid raw material replenishment step described later is not being performed.

[0077] Here, storage tank 610 and the stored liquid raw material are heated by heater 630, and the heated liquid raw material vaporizes to generate raw material gas (vaporized gas). Immediately before the raw material gas begins to be supplied to processing chamber 201, valve 620 is closed, and storage tank 610 is filled with the raw material gas. The pressure in storage tank 610 decreases while the raw material gas is being supplied (i.e., while valves 314 and 620 are open), and increases while the raw material gas supply is stopped (i.e., while valves 314 and 620 are closed) due to the vaporization of the liquid raw material.

[0078] Figure 6 In this embodiment, the pressure in the storage tank 610 changes with time. Figure 6 The pressure change before time T0 shown in FIG shows that during one batch of film formation processing, a predetermined number (n) of pressure decreases due to the supply of raw material gas and pressure increases due to the cessation of raw material gas supply occur. By repeating the vaporization and supply of the liquid raw material one or more times in this manner, the liquid raw material in storage tank 610 is consumed. In this embodiment, the liquid raw material is replenished into storage tank 610 for each batch (replenishment process). However, the liquid raw material replenishment process can also be performed during each of multiple batch processes.

[0079] The source gas supplied from the storage tank 610 is flow-regulated by the MFC 312 and supplied from the supply hole 410a of the nozzle 410 toward the processing chamber 201. Simultaneously, the valve 514 is opened to allow the carrier gas to flow into the gas supply pipe 510. The carrier gas is flow-regulated by the MFC 512 and supplied into the processing chamber 201 along with the source gas from the supply hole 410a of the nozzle 410, and then exhausted from the exhaust pipe 231.

[0080] Furthermore, to prevent the source gas from entering the nozzle 420 , the valve 524 is opened to allow the carrier gas to flow into the gas supply pipe 520 . The carrier gas is supplied to the processing chamber 201 through the gas supply pipe 520 and the nozzle 420 and exhausted from the exhaust pipe 231 .

[0081] At this time, the APC valve 243 is appropriately adjusted to set the pressure of the processing chamber 201 to, for example, a pressure within the range of 1 to 1000 Pa. Furthermore, in this specification, when a numerical range is described as, for example, 1 to 1000 Pa, it means a range of 1 Pa to 1000 Pa. That is, the numerical range includes 1 Pa and 1000 Pa. The same applies to other numerical ranges described in this specification.

[0082] The flow rate of the source gas supplied by MFC 312 is set to, for example, a range of 10 to 2000 sccm, preferably a range of 50 to 1000 sccm, and more preferably a range of 100 to 500 sccm. The duration of each cycle of supplying the source gas to wafer 200 is set to, for example, a range of 1 to 60 seconds. Heater 207 is controlled to maintain the temperature of wafer 200 within, for example, a range of 400 to 600°C.

[0083] When the source gas is supplied to the processing chamber 201 under the above-described conditions, a layer containing a predetermined element contained in the source gas is formed on the outermost surface of the wafer 200 .

[0084] As the inert gas, for example, nitrogen (N2) gas, or a rare gas such as argon (Ar) gas, helium (He) gas, neon (Ne) gas, or xenon (Xe) gas can be used. One or more of these gases can be used as the inert gas. This also applies to the steps described below.

[0085] In addition, as the raw material gas, for example, a gas containing a semiconductor element such as silicon (Si) or a metal element such as titanium (Ti), zirconium (Zr), hafnium (Hf), tantalum (Ta), aluminum (Al), molybdenum (Mo), or tungsten (W) can be used. Raw materials that are liquid at room temperature and pressure (i.e., liquid raw materials) can be used. The raw material gas can be obtained by vaporizing these liquid raw materials in the storage tank 610.

[0086] For example, liquid raw materials such as the following gases can be used: monochlorosilane (SiH3Cl) gas, dichlorosilane (SiH2Cl2) gas, trichlorosilane (SiHCl3) gas, tetrachlorosilane (SiCl4) gas, hexachlorodisilane (Si2Cl6) gas, octachlorotrisilane (Si3Cl8) gas, 1,2-bis(trichlorosilyl)ethane ((SiCl3)2C2H4) gas, bis(trichlorosilyl)methane ((SiCl3)2CH2) gas, 1,1,2,2-tetrachloro-1 ,2-dimethyldisilane ((CH3)2Si2Cl4) gas, 1,2-dichloro-1,1,2,2-tetramethyldisilane ((CH3)4Si2Cl2) gas, 1-monochloro-1,1,2,2,2-pentamethyldisilane ((CH3)5Si2Cl) gas, trifluorosilane (SiHF) gas, tetrafluorosilane (SiF4) gas, tribromosilane (SiHBr3) gas, tetrabromosilane (SiBr4) gas and other halogenated silane raw materials; trisilane (Si3H8) gas, tetrasilane (Si4H 10 ) gas, pentasilane (Si5H 12 ) gas, hexasilane (Si6H 14 ) gas and other inorganic silane raw material gases; various aminosilane raw material gases such as tetradimethylaminosilane (Si[N(CH3)2]4) gas, tridimethylaminosilane (Si[N(CH3)2]3H) gas, bisdiethylaminosilane (Si[N(C2H5)2]2H2), and bis-tert-butylaminosilane (SiH2[NH(C4H9)]2) gas; 1,4-disiloxane (Si2C2H 10 ) gas and other organosilane raw material gases.

[0087] In addition, for example, liquid raw materials such as the following gases can be used: tetrakis(dimethylamino)titanium (Ti[N(CH3)2]4) gas and titanium tetrachloride (TiCl4) gas as Ti-containing raw materials; tetrakis(ethylmethylamino)hafnium (Hf[N(C2H5)(CH3)]4) gas and hafnium tetrachloride (HfCl4) gas as Hf-containing raw materials; tetrakis(ethylmethylamino)zirconium (Zr[N(C2H5)(CH3)]4) gas as Zr-containing raw materials; trimethylaluminum (Al(CH3)3) gas as Al-containing raw materials; tetraethoxytantalum (Ta(OC2H5)5), triethylmethylaminotantalum tert-butylimino (Ta[NC(CH3)3][N(C2H5)CH3]3), and pentaethoxytantalum (Ta(OC2H5)5) gas as Ta-containing raw materials.

[0088] [Residual gas removal process]

[0089] After the layer containing the predetermined element is formed, valves 314 and 620 are closed to stop the supply of the raw material gas. At this point, APC valve 243 remains open, and vacuum pump 246 is used to evacuate the processing chamber 201. Any remaining unreacted raw material gas or raw material gas that has contributed to the formation of the layer containing the predetermined element is removed from the processing chamber 201. While valves 514 and 524 are open, the supply of carrier gas to the processing chamber 201 is maintained. The carrier gas acts as a purge gas, effectively removing any remaining unreacted raw material gas or raw material gas that has contributed to the formation of the layer containing the predetermined element from the processing chamber 201.

[0090] [Reaction Gas Supplying Step]

[0091] After removing the residual gas in the processing chamber 201, the valve 324 is opened to allow the reaction gas to flow into the gas supply pipe 320. As the reaction gas, for example, oxygen (O) can be contained, and an oxygen-containing gas (oxidizing gas, oxidizing agent) that reacts with the predetermined element contained in the raw material gas can be used. As the oxygen-containing gas, for example, oxygen (O2) gas, ozone (O3) gas, plasma-excited O2 gas (O2*), a mixed gas containing O2 gas and hydrogen (H2) gas, water vapor (H2O gas), hydrogen peroxide (H2O2) gas, nitrous oxide (N2O) gas, nitric oxide (NO) gas, nitrogen dioxide (NO2) gas, carbon monoxide (CO) gas, carbon dioxide (CO2) gas, etc. can be used. As the reaction gas, one or more of these gases can be used.

[0092] The reaction gas is flow-controlled by the MFC 322, supplied from the supply hole 420a of the nozzle 420 to the wafer 200 in the processing chamber 201, and exhausted from the exhaust pipe 231. That is, the wafer 200 is exposed to the reaction gas.

[0093] At this time, valve 524 is opened to allow carrier gas to flow into gas supply pipe 520. The carrier gas, whose flow rate is regulated by MFC 522, is supplied into process chamber 201 along with the reactant gas and is then exhausted from exhaust pipe 231. At this time, to prevent reactant gas from entering nozzle 410, valve 514 is opened to allow carrier gas to flow into gas supply pipe 510. The carrier gas is supplied into process chamber 201 via gas supply pipe 510 and nozzle 410 and is then exhausted from exhaust pipe 231.

[0094] At this time, the APC valve 243 is appropriately adjusted to set the pressure of the processing chamber 201 to, for example, a range of 1 to 1000 Pa. The flow rate of the reactive gas supplied by the MFC 322 is set to, for example, a range of 5 to 40 slm, preferably 5 to 30 slm, and more preferably 10 to 20 slm. The duration of each cycle of supplying the reactive gas to the wafer 200 is set to, for example, a range of 1 to 60 seconds. Other processing conditions are the same as those in the aforementioned raw material gas supply step.

[0095] When an oxygen-containing gas is supplied as a reaction gas into the processing chamber 201 under the aforementioned conditions, the reaction gas reacts with at least a portion of the layer containing the predetermined element formed on the wafer 200 during the reaction gas supply step, oxidizing the layer containing the predetermined element to form an oxide layer containing the predetermined element and O. In other words, the layer containing the predetermined element is modified into an oxide layer containing the predetermined element.

[0096] [Residual gas removal process]

[0097] After the oxide layer is formed, valve 324 is closed to stop the supply of the reaction gas. Furthermore, the unreacted reaction gas or reaction byproducts that have contributed to the formation of the oxide layer and remain in the processing chamber 201 are removed from the processing chamber 201 through the same process sequence as the residual gas removal process after the raw material gas supply process.

[0098] The above-described gasification step, raw material gas supply step, residual gas removal step, reaction gas supply step, and residual gas removal step are cycled sequentially and performed a predetermined number of times (n). In this way, by performing multiple steps a predetermined number of times in one batch process, an oxide film obtained by stacking oxide layers is formed on the wafer 200.

[0099] In this specification, a batch process refers to a process in which a raw material gas supply step, a residual gas removal step, a reaction gas supply step, and a residual gas removal step are performed in a cycle in sequence a predetermined number of times (n) to form a film of a predetermined thickness on the wafer 200. Furthermore, a film of a predetermined thickness is formed on the wafer 200 in one batch.

[0100] [Exhaust / Pressure Adjustment]

[0101] After a film of a predetermined thickness is formed on the wafer 200 and the residual gas removal step is completed, valves 514 and 524 are opened to supply a carrier gas from the gas supply pipes 510 and 520, respectively, to the processing chamber 201 and exhaust the carrier gas from the exhaust pipe 231. The carrier gas acts as a purge gas, removing the gas and reaction byproducts remaining in the processing chamber 201. The atmosphere in the processing chamber 201 is then replaced with the carrier gas, and the pressure in the processing chamber 201 is restored to normal pressure (return to atmospheric pressure).

[0102] [Move out / Take out]

[0103] Then, the sealing cap 219 is lowered by the boat elevator 115 to open the lower end of the manifold 209 , and the processed wafers 200 are carried out of the processing tube 203 from the lower end of the manifold 209 while being supported by the boat 217 .

[0104] After unloading, the gate 219s is moved, and the lower end opening of the manifold 209 is sealed by the gate 219s. After the processed wafers 200 are unloaded outside the processing tube 203, they are taken out of the wafer boat 217. In this embodiment, the wafers 200 are loaded into and unloaded from the processing tube 203 (processing chamber 201) for each batch.

[0105] As described above, after wafers 200 are removed from the wafers 200 on which a film having a predetermined thickness has been formed through various processes (steps), if a film is to be formed on another wafer 200, the "loading / carrying in," "pressure / temperature adjustment," "film formation," "exhaust / pressure adjustment," and "unloading / removal" steps are repeated. In other words, the wafers 200 are batch processed again. In this specification, batch processing refers to a series of processes from "loading / carrying in" to "unloading / removal," and can also be considered a single batch process.

[0106] Through the above-mentioned film formation process, an oxide film containing a predetermined element contained in the raw material gas can be formed on the wafer 200. For example, using the above-mentioned raw material gas, an oxide film such as a titanium oxide film (TiO film), a zirconium oxide film (ZrO film), a hafnium oxide film (HfO film), a tantalum oxide film (TaO film), an aluminum oxide film (AlO film), a molybdenum oxide film (MoO film), and a tungsten oxide film (WO film) can be formed. In addition, for example, a nitrogen-containing gas (nitriding gas, nitriding agent) can be used as a reaction gas instead of an oxygen-containing gas to form a nitride film such as a titanium nitride film (TiN film), a zirconium nitride film (ZrN film), a hafnium nitride film (HfN film), a tantalum nitride film (TaN film), an aluminum nitride film (AlN film), a molybdenum nitride film (MoN film), and a tungsten nitride film (WN film).

[0107] [Liquid raw material replenishment process]

[0108] After the raw material gas supply process for a batch of processing is completed, the liquid raw material is replenished into the storage tank 610 (replenishment process). The replenishment process is performed between the completion of the raw material gas supply process for a batch of processing and the closing of valves 314 and 620, and the start of the raw material gas supply process for the next batch of processing and the opening of valves 314 and 620. The replenishment process can be performed simultaneously with other processes in the batch of processing, or it can be performed simultaneously with other processes. In this embodiment, the replenishment process is performed for each batch, but as described above, the replenishment process can also be performed once for each of multiple batches.

[0109] In this embodiment, in both the film forming process and the replenishing process, the heating control state by the heater 630 is maintained so that at least one of the storage tank 610 and the stored liquid raw material reaches a predetermined temperature.

[0110] (Step A: Liquid Raw Material Supply Step)

[0111] After the raw material gas supply process is completed, valve 720 is opened while valve 620 is closed, thereby pressurizing the liquid raw material in liquid supply pipe 754 into storage tank 610. Valve 720 is opened for a predetermined time and then closed to supply (replenish) a predetermined amount of liquid raw material into storage tank 610. At this time, as described above, valve 620 is closed, and the liquid raw material is pressurized into the storage tank 610, which becomes a closed space, which sometimes causes the pressure in storage tank 610 to rise rapidly. As an example, Figure 6 In the embodiment, when the supply of the liquid raw material is started at time T0 and stopped at time T1, the pressure in the storage tank 610 rises to the pressure Pf.

[0112] At this point in time, the pressure within storage tank 610 increases, creating a state that is prone to poor vaporization of the liquid raw material. In particular, if this pressure rises to a value exceeding the saturated vapor pressure of the liquid raw material (specifically, the saturated vapor pressure at the temperature of the liquid raw material at that point in time), the likelihood of poor vaporization of the liquid raw material increases, and there is also the possibility that some of the vaporized gas within storage tank 610 will liquefy. If tiny droplets resulting from poor vaporization flow into processing chamber 201 along with the raw material gas during the raw material gas supply process, they may adhere to the surface of wafer 200, for example, and thus become a major factor in reducing product quality.

[0113] Here, in this embodiment, in the next step B, the pressure in the storage tank 610 is adjusted.

[0114] (Step B: First Pressure Adjustment Step)

[0115] After step A is completed, valves 620 and 820 are opened while valve 314 is closed, thereby exhausting the atmosphere in storage tank 610 through exhaust pipe 810 and adjusting the pressure by reducing the pressure in storage tank 610. Vacuum pump 830 is maintained in operation at least during this step.

[0116] In this embodiment, if Figure 6 In this example, pressure adjustment begins at or immediately after the end of step A (i.e., time T1) and continues for a predetermined period (the first pressure adjustment period). Specifically, pressure adjustment is performed between times T1 and T2. Through pressure adjustment, the pressure within storage tank 610 is reduced to the first predetermined pressure, or pressure Pt. At time T2, valves 620 and 820 are closed, thereby concluding this step (i.e., pressure adjustment).

[0117] In this step, the pressure within storage tank 610 is reduced to reduce the possibility of poor vaporization of the liquid raw material. In particular, it is preferred that the pressure Pt after decompression is less than the saturated vapor pressure of the liquid raw material. Reducing the pressure within storage tank 610 to less than the saturated vapor pressure significantly reduces the possibility of poor vaporization of the liquid raw material.

[0118] Furthermore, the pressure adjustment in this step is not limited to being terminated after a predetermined time period as described above, but may also be terminated when the pressure in the storage tank 610 detected by the pressure sensor 640 falls below a predetermined pressure (for example, when the pressure reaches the predetermined pressure). In this case, the predetermined pressure is preferably set to a pressure lower than the saturated vapor pressure of the liquid raw material.

[0119] The time point to start this step is not limited to Figure 6 The time point for ending step A can be set as follows, or immediately thereafter. Figure 7 For example, the time point (time T1-2) is set as the time point (time T1-1) at which a predetermined time has elapsed since the end of step A. Thus, by performing pressure adjustment at a fixed time interval after the end of step A, it is possible to prevent tiny droplets generated in the storage tank 610 during pressure adjustment from adhering to the gas supply pipe 310 and causing corrosion.

[0120] Furthermore, the predetermined time (i.e., the time from time T1-1 to time T1-2) is preferably shorter than the time for performing the pressure stabilization step (step C) described later (i.e., the time from time T2 to time T3). If the predetermined time is longer than the time for performing the pressure stabilization step, the period from time T1-1 to time T1-2, where a poor vaporization state is likely to occur, becomes longer, and the effect of suppressing poor vaporization in this step cannot be fully achieved.

[0121] (Step C: Pressure Stabilization Step)

[0122] After step B is completed, valve 620 is closed to seal the storage tank 610. In the sealed storage tank 610, the liquid raw material is heated and vaporized, thereby increasing (restoring) the pressure in the storage tank 610.

[0123] By sufficiently ensuring the duration of this step, the temperature of the liquid raw material in the storage tank 610 can be stabilized, and the pressure in the storage tank 610 can be increased to a pressure Ps close to the saturated vapor pressure of the liquid raw material at the stable temperature.

[0124] This step ends at the time when the next batch process starts. For example, from the time when the raw gas supply process in the next batch process starts, the time of executing the later-described steps D and E is back-calculated, and this step ends at that time.

[0125] More specifically, for example, this step is ended at a time point after the above-mentioned time, starting from the start time of the raw gas supply process in the next batch processing that is preset, or from the start time of the raw gas supply process in the next batch processing indicated by the user to the control unit 121.

[0126] In addition, this step may be continued at least until the rate of change of the pressure value in the storage tank 610 (ie, the slope of the change of the pressure value with respect to time) becomes equal to or less than a predetermined value, for example.

[0127] Furthermore, this step may be performed continuously for at least a predetermined time (i.e., a third predetermined time) which is set to a time when the rate of change of the pressure value is sufficiently slow and which can be obtained, for example, through prior experiments.

[0128] Alternatively, this step may be continued until the pressure in the storage tank 610 reaches a predetermined pressure (i.e., a second predetermined pressure). This predetermined pressure is set so that the rate of change in the pressure value is sufficiently slow, and can be determined, for example, through prior experiments.

[0129] (Step D: Second Pressure Adjustment Step)

[0130] After step C is completed, similar to step B, the atmosphere within storage tank 610 is exhausted through exhaust pipe 810 with valve 314 closed to adjust the pressure and reduce the pressure within storage tank 610, as a pre-process for the raw material gas supply step in the next batch process. Vacuum pump 830 is maintained in operation for at least the duration of this step.

[0131] In this embodiment, as Figure 6 in the example of Figure 6 , at the time point when step C ends (i.e., time T3), or immediately thereafter, pressure adjustment is started, and pressure adjustment is performed during a predetermined time (second pressure adjustment time). That is, pressure adjustment is performed during the period from time T3 to T4. By the pressure adjustment, the pressure in the storage tank 610 is reduced to pressure Pu. At time T4, valves 620 and 820 are closed, thereby ending this step.

[0132] Here, the time for performing step B is longer than the time for performing step D. The pressure Pf in the storage tank 610 at the time point when step B starts is higher than the pressure Ps at the time point when step D starts. Therefore, by setting the decompression time in step B to be longer, the pressure in the storage tank 610 can be effectively reduced to the desired pressure. For example, each step is performed in such a way that the time Tb for performing step B and the time Td for performing step D satisfy 1 < Tb / Td ≤ 20.

[0133] In addition, the exhaust speed of the storage tank 610 in step B can be made smaller than the exhaust speed of the storage tank 610 in step D by adjusting the opening degree of valve 820. By adjusting the exhaust speed in this way, it is possible to easily control so that the pressure in the storage tank 610 does not decrease excessively in step B.

[0134] In addition, in step B and step D, the exhaust speed of the storage tank 610 in step B can be made smaller than the exhaust speed of the storage tank 610 in step D by adjusting the opening degree of valve 820. By adjusting the exhaust speed in this way, the following situations can be suppressed: the pressure in the storage tank 610 in step B decreases excessively, resulting in the liquid raw material being rapidly gasified / discharged and consumed, etc. In addition, the adjustment of the exhaust speed can also be set to be performed by an MFC further provided in the exhaust pipe 810.

[0135] (Step E: Pressure increase step)

[0136] After step D ends, similar to step C, valve 620 is closed, so that the inside of the storage tank 610 becomes a closed state. Inside the closed storage tank 610, the liquid raw material is heated and gasified, thereby increasing (restoring) the pressure in the storage tank 610 to the pressure at which the required amount of raw material gas can be supplied in the raw material gas supply process.

[0137] After this step, valves 314 and 620 are opened, thereby starting the raw material gas supply process in the next batch process.

[0138] (3) Comparison with the comparative example

[0139] Here, as a comparative example with respect to the present embodiment, a case where step B and step D are not performed will be described. Figure 8 An example of how the pressure in the storage tank 610 changes with time in a comparative example is shown.

[0140] In the comparative example, after the pressure within storage tank 610 rises to pressure Pf' in step A, no pressure adjustment is performed, and valve 620 remains closed from time T1' to time T3'. During this period, the pressure within storage tank 610 decreases toward the saturated vapor pressure of the liquid raw material, while pressure Ps' remains stable. However, in the comparative example, during this period of decreasing pressure, the pressure exceeds the saturated vapor pressure, and a state prone to poor vaporization persists. Therefore, after T3', when the raw material gas supply step is initiated in the next batch process, there is a high probability that mist of the liquid raw material generated by poor vaporization will be supplied into processing chamber 201 along with the raw material gas.

[0141] On the other hand, in the embodiments of the present disclosure, Figure 6 As shown, in step B, the pressure within storage tank 610 is reduced to a pressure lower than the saturated vapor pressure of the liquid raw material. Consequently, in step C, the pressure increases toward the saturated vapor pressure and stabilizes. Thus, in the embodiment of the present disclosure, by increasing the pressure as it approaches saturation, the pressure can be stabilized while maintaining a state where poor vaporization of the liquid raw material is less likely to occur.

[0142] Furthermore, in an embodiment of the present disclosure, in step D, the pressure in the storage tank 610 is reduced as a pre-process for the raw gas supply process in the next batch processing, thereby further reducing the possibility that the vaporized gas supplied to the processing chamber 201 in the raw gas supply process contains mist, etc. caused by poor vaporization of the liquid raw material.

[0143] <Other aspects of the present disclosure>

[0144] The embodiments of the present disclosure have been specifically described above. However, the present disclosure is not limited to the above embodiments, and various modifications can be made without departing from the spirit of the present disclosure.

[0145] In the above embodiment, the pressure in storage tank 610 is increased in step A of the liquid raw material replenishment process, and then pressure adjustment is performed in step B. However, the present disclosure is not limited to this embodiment. For example, at least one of the pressure or the supply flow rate of the liquid raw material supplied in step A may be adjusted so that the pressure in storage tank 610 at the end of step A is equal to or lower than the saturated vapor pressure of the liquid raw material, which is a predetermined pressure.

[0146] Specifically, the opening of valve 720 in step A may be adjusted so that at least one of the pumping pressure or the supply flow rate reaches the above-mentioned value. Furthermore, a liquid MFC may be further provided in the liquid supply pipe 754, and at least one of the pumping pressure or the supply flow rate may be adjusted by controlling the liquid MFC.

[0147] In addition, it can also be set to provide an orifice portion (aperture portion) in the liquid supply pipe 754, or provide a nozzle with an aperture portion at the front end of the liquid supply pipe 754, so that at least one of the pressure of the liquid raw material or the supply flow rate becomes below the above-mentioned value.

[0148] By adjusting the pressure in the storage tank 610 at the end of step A to a value lower than the saturated vapor pressure of the liquid raw material, it is possible to suppress poor vaporization caused by increased pressure in the storage tank 610, as in the above embodiment.

[0149] Preferably, the recipe for each process is prepared individually according to the process content and pre-recorded and stored in the storage device 121c via an electrical communication line or an external storage device 123. Furthermore, preferably, when each process is started, the CPU 121a appropriately selects an appropriate recipe based on the process content from the multiple recipes recorded and stored in the storage device 121c. This allows a single substrate processing apparatus to reproducibly form films of various film types, composition ratios, film qualities, and film thicknesses. Furthermore, this reduces the burden on operators, prevents operational errors, and allows each process to be started quickly.

[0150] The above recipes are not limited to being created from scratch; for example, they can be prepared by modifying an existing recipe already installed in a substrate processing apparatus. When modifying a recipe, the modified recipe can be installed in the substrate processing apparatus via an electrical communication line or a storage medium storing the recipe. Alternatively, the recipe installed in the existing substrate processing apparatus can be modified directly by operating the input / output device 122 of the existing substrate processing apparatus.

[0151] In the above-described embodiments, an example of film formation using a batch-type substrate processing apparatus that processes multiple substrates at a time has been described. However, the present disclosure is not limited to the above-described embodiments and can also be appropriately applied to film formation using a single-type substrate processing apparatus that processes one or more substrates at a time. Furthermore, in the above-described embodiments, an example of film formation using a substrate processing apparatus with a hot-wall processing furnace has been described. However, the present disclosure is not limited to the above-described embodiments and can also be appropriately applied to film formation using a substrate processing apparatus with a cold-wall processing furnace.

[0152] When these substrate processing apparatuses are used, each process can be performed using the same processing sequence and processing conditions as those of the above-described embodiment or modified example, and the same effects as those of the above-described embodiment or modified example can be obtained.

[0153] The above-mentioned embodiments or modified examples may be used in combination as appropriate. The processing sequence and processing conditions in this case may be, for example, the same as those in the above-mentioned embodiments or modified examples.

[0154] Explanation of symbols

[0155] 10—substrate processing device; 121—control unit; 200—wafer; 201—processing chamber; 610—storage tank.

Claims

1. A method for controlling a gasification system, characterized in that: have: Step (a), supplying a liquid raw material into a vaporization container; Step (b), adjusting the pressure in the vaporization container by reducing the pressure at the time of completion of step (a) or after a first predetermined time has elapsed from the time of completion; Step (c), after step (b), maintaining the state in which the liquid raw material is vaporized and the pressure adjustment in the vaporization container is stopped; and In step (d), after step (c), the vaporized gas generated by vaporizing the liquid raw material in the vaporization container is supplied to a processing container for processing a substrate.

2. The control method of the gasification system according to claim 1, characterized in that: The method further comprises a step (e) of adjusting the pressure in the vaporization container between (c) and (d) so as to reduce the pressure.

3. The control method of the gasification system according to claim 2, characterized in that: The time for pressure adjustment in (b) is longer than that in (e).

4. The control method of the gasification system according to claim 2, characterized in that: The exhaust speed in the vaporization container in (b) is lower than the exhaust speed in the vaporization container in (e).

5. The control method of a gasification system according to any one of claims 2 to 4, characterized in that: The method further comprises a step (f) of maintaining the state where the pressure adjustment in the vaporization container is stopped between (e) and (d).

6. The control method of the gasification system according to claim 1, characterized in that: During the period from the start (a) to the start (d), the vaporized gas is not supplied into the processing container.

7. The control method of the gasification system according to claim 1, characterized in that: In (b), pressure adjustment is performed until the pressure in the vaporization container becomes lower than the saturated vapor pressure of the liquid raw material in the vaporization container.

8. The control method of the gasification system according to claim 1, characterized in that: In (b), the pressure is adjusted until the second predetermined time has passed.

9. The control method of the gasification system according to claim 1, characterized in that: In (b), the pressure is adjusted until the pressure in the vaporization container is reduced to a first predetermined pressure.

10. A method for manufacturing a semiconductor device, characterized in that: have: Step (a), supplying a liquid raw material into a vaporization container; Step (b), adjusting the pressure in the vaporization container by reducing the pressure at the time of completion of step (a) or after a first predetermined time has elapsed from the time of completion; Step (c), after step (b), maintaining the state in which the liquid raw material is vaporized and the pressure adjustment in the vaporization container is stopped; and In step (d), after step (c), the vaporized gas generated by vaporizing the liquid raw material in the vaporization container is supplied to a processing container for processing a substrate.

11. The method for manufacturing a semiconductor device according to claim 10, wherein: Also features: Step (e), before step (d), loading the substrate into the processing container; and Step (f), after step (d), removing the substrate from the processing container, Each time (e) and (f) are performed, (a), (b) and (c) are performed at least once.

12. The method for manufacturing a semiconductor device according to claim 10, wherein: Also features: Step (e), before step (d), loading the substrate into the processing container; and Step (f), after step (d), removing the substrate from the processing container, When (e) and (f) are performed a plurality of times, (a), (b) and (c) are performed at least once.

13. A substrate processing device, characterized in that: have: a vaporization vessel, which vaporizes the liquid raw material therein; a liquid raw material supply system for supplying the liquid raw material into the vaporization container; a vaporized gas supply system for supplying vaporized gas generated by vaporizing the liquid raw material in the vaporization container to a processing container for processing a substrate; a pressure regulating unit for regulating the pressure in the vaporizing container; a heating unit for heating the liquid raw material in the vaporization container; and The control unit is configured to control the liquid raw material supply system, the vaporized gas supply system, the pressure regulating unit, and the heating unit so as to perform the following processing: Process (a), supplying the liquid raw material into the vaporization container; Process (b), at the time of completion of process (a) or after a first predetermined time has passed from that time, adjusting the pressure in the vaporization container by reducing the pressure; Process (c), after (b), maintaining the state in which the liquid raw material is vaporized and the pressure adjustment in the vaporization container is stopped; and Process (d): After process (c), the vaporized gas is supplied into the processing container.

14. The substrate processing apparatus according to claim 13, wherein: The pressure regulating unit is composed of an exhaust pipe and a first opening and closing valve. One end of the exhaust pipe is directly or indirectly connected to the vaporization container, and the other end is connected to the exhaust device. The first opening and closing valve is provided on the exhaust pipe. In (b), the control unit controls at least one of opening and closing and the opening degree of the first on-off valve to reduce the pressure in the vaporization container.

15. The substrate processing apparatus according to claim 14, wherein: The pressure regulating unit further comprises a flow controller provided on the exhaust pipe. In (b), the control unit adjusts the flow rate in the exhaust pipe by controlling the flow controller.

16. The substrate processing apparatus according to claim 13, wherein: The liquid raw material supply system is composed of a liquid raw material supply pipe and a second on-off valve. One end of the liquid raw material supply pipe is connected to the vaporization container, and the other end is connected to the supply source of the liquid raw material. The second on-off valve is provided on the liquid raw material supply pipe. In (a), the control unit controls at least one of opening and closing and the opening degree of the second on-off valve to supply the liquid raw material into the vaporization container.

17. The substrate processing apparatus according to claim 13, wherein: The gasification gas supply system is composed of a gasification gas supply pipe and a third on-off valve. One end of the gasification gas supply pipe is directly or indirectly connected to the inside of the gasification container, and the other end is connected to the inside of the processing container. The third on-off valve is provided on the gasification gas supply pipe. The control unit is configured to control at least one of opening and closing and an opening degree of the third on-off valve to supply the vaporized gas from the vaporization container into the processing container.

18. The substrate processing apparatus according to claim 13, wherein: The liquid raw material supply system includes a liquid raw material supply pipe, one end of which is connected to the vaporization container, and the other end of which is connected to the supply source of the liquid raw material. An orifice is provided in at least one of the liquid raw material supply pipe and the front end of the one end side of the liquid raw material supply pipe.

19. A gasification system, characterized in that: have: a vaporization vessel, which vaporizes the liquid raw material therein; a liquid raw material supply system for supplying the liquid raw material into the vaporization container; a vaporized gas supply system for supplying vaporized gas generated by vaporizing the liquid raw material in the vaporization container to a processing container for processing a substrate; a pressure regulating unit for regulating the pressure in the vaporizing container; a heating unit for heating the liquid raw material in the vaporization container; and The control unit is configured to control the liquid raw material supply system, the vaporized gas supply system, the pressure regulating unit, and the heating unit so as to perform the following processing: Process (a), supplying the liquid raw material into the vaporization container; Process (b), at the time of completion of process (a) or after a first predetermined time has passed from that time, adjusting the pressure in the vaporization container by reducing the pressure; Process (c), after (b), maintaining the state in which the liquid raw material is vaporized and the pressure adjustment in the vaporization container is stopped; and Process (d): After process (c), the vaporized gas is supplied into the processing container.

20. A program, characterized in that The computer enables the substrate processing apparatus to perform the following steps: Step (a), supplying liquid raw material into a gasification container; Step (b), adjusting the pressure in the vaporization container by reducing the pressure at the time point when step (a) is completed or after a first predetermined time has passed from the time point; Step (c), after step (b), maintaining the state of vaporizing the liquid raw material and stopping the pressure adjustment in the vaporization container; as well as Step (d), after step (c), supplying the vaporized gas generated by vaporizing the liquid raw material in the vaporization container to a processing container for processing the substrate.

Images