Polishing head assembly, control device, polishing equipment and polishing method

Abstract

The invention provides a polishing head assembly, a control device, polishing equipment and a polishing method, and the polishing head assembly comprises a magnetic field generation unit used for generating a magnetic field; the adsorption pad is arranged in the area where the magnetic field is located, the adsorption pad comprises a magnetostrictive deformation layer and a contact layer, the contact layer is provided with a bearing face used for bearing a silicon wafer to be polished, and the magnetostrictive deformation layer is arranged on the side, away from the bearing face, of the contact layer; the magnetostrictive deformation layer is configured to respond to a magnetic field and generate different deformation quantities in a first direction at different positions, and the first direction is perpendicular to the bearing surface; and the contact layer is configured to generate a shape change matched with the deformation quantity of the magnetostrictive deformation layer on the bearing surface. According to the polishing head assembly, the control device, the polishing equipment and the polishing method, the polishing quality can be improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor device manufacturing, and in particular to a polishing head assembly, a control device, a polishing device and a polishing method. Background Art

[0002] Chemical Mechanical Polishing (CMP), also known as chemical mechanical polishing or chemical mechanical planarization, is a key and essential technology in silicon wafer manufacturing. It polishes the silicon wafer surface through chemical reactions and mechanical grinding to achieve the required flatness and remove surface defects or damage layers.

[0003] Final polishing equipment is used to give silicon wafers a mirror-like finish, controlling the wafer's final flatness, surface grain, and metal quality. The fixed-shape adsorption pads on the polishing head assembly in final polishing equipment make it difficult to adapt to the polishing needs of silicon wafers with varying morphologies, and thus unable to precisely polish localized areas of the wafer. Summary of the Invention

[0004] In order to solve at least one technical problem in the above-mentioned prior art, the embodiments of the present disclosure provide a polishing head assembly, a control device, a polishing device and a polishing method.

[0005] The technical solutions provided by the embodiments of the present disclosure are as follows:

[0006] In a first aspect, an embodiment of the present disclosure provides a polishing head assembly, comprising:

[0007] a magnetic field generating unit, configured to generate a magnetic field; and

[0008] An adsorption pad is arranged in the area where the magnetic field is located, the adsorption pad includes a magnetostrictive layer and a contact layer, the contact layer has a bearing surface for bearing the silicon wafer to be polished, and the magnetostrictive layer is arranged on the side of the contact layer away from the bearing surface; the magnetostrictive layer is configured to respond to the magnetic field and generate different deformation amounts along a first direction at different positions, and the first direction is perpendicular to the bearing surface; the contact layer is configured to generate a morphological change on the bearing surface that is adapted to the deformation amount of the magnetostrictive layer.

[0009] Exemplarily, the adsorption pad also includes a covering layer, which covers at least the side of the magnetostrictive layer facing away from the contact layer, and the covering layer is made of an elastic deformable material. The covering layer is configured to produce a morphological change that is adapted to the deformation amount of the magnetostrictive layer.

[0010] Exemplarily, the magnetostrictive layer is made of a magnetostrictive material, and the magnetostrictive layer is used to respond to changes in the magnetic field and deform by changing the magnetic domain changes inside the material; or, the magnetostrictive layer includes: a base material layer, and magnetic particles embedded in the base material layer, and the magnetostrictive layer is used to respond to changes in the magnetic field and deform by changing the distribution state of the magnetic particles in the base material layer.

[0011] Exemplarily, the contact layer includes multiple sub-regions, the magnetic field generating unit includes multiple sub-magnetic control units, one sub-magnetic control unit is arranged corresponding to one sub-region, and the magnetic field conditions of different sub-magnetic control units can be controlled independently of each other so that the magnetic field conditions of different sub-regions can be different, wherein the magnetic field conditions include at least one of magnetic field intensity and magnetic field direction.

[0012] Exemplarily, the sub-magnetic control unit includes an electromagnet and / or an electromagnetic coil.

[0013] Exemplarily, the multiple sub-regions are distributed in an array on the carrying surface; or, each sub-region is an annular region surrounding the center of the carrying surface, and the multiple sub-regions are arranged in sequence in concentric circles along a direction from the center of the carrying surface to the edge of the carrying surface.

[0014] Exemplarily, when the multiple sub-regions are arranged in concentric circles along a direction from the center of the carrying surface to the edge of the carrying surface, the magnetic field generating unit includes a plurality of electromagnetic coils, and the multiple electromagnetic coils are nested in concentric circles from the inside to the outside, and one electromagnetic coil forms a sub-magnetic control unit.

[0015] In a second aspect, an embodiment of the present disclosure provides a control device applied to the polishing head assembly described above; the control device comprises:

[0016] a receiving unit, configured to receive flatness information of a silicon wafer to be polished, wherein the flatness information includes at least one of initial flatness information of the silicon wafer to be polished before polishing and real-time flatness information of the silicon wafer to be polished during the polishing process;

[0017] an acquiring unit connected to the receiving unit, and configured to acquire deformation differences of the bearing surface at different positions based on the flatness information;

[0018] A control unit is connected to the acquisition unit and the magnetic field generating unit respectively, and the control unit is configured to control the working parameters of the magnetic field generating unit based on the deformation difference so that the morphology of the carrying surface is adapted to the flatness information of the silicon wafer to be polished.

[0019] In a third aspect, an embodiment of the present disclosure provides a polishing device, comprising:

[0020] The polishing head assembly as described above; and

[0021] A control device, comprising:

[0022] a receiving unit, configured to receive flatness information of a silicon wafer to be polished, wherein the flatness information includes at least one of initial flatness information of the silicon wafer to be polished before polishing and real-time flatness information of the silicon wafer to be polished during the polishing process;

[0023] an acquiring unit connected to the receiving unit, and configured to acquire deformation differences of the bearing surface at different positions based on the flatness information;

[0024] A control unit is connected to the acquisition unit and the magnetic field generating unit respectively, and the control unit is configured to control the working parameters of the magnetic field generating unit based on the deformation difference so that the morphology of the carrying surface is adapted to the flatness information of the silicon wafer to be polished.

[0025] In a fourth aspect, an embodiment of the present disclosure provides a polishing method, which is applied to the polishing device described above, and the polishing method includes:

[0026] receiving flatness information of a silicon wafer to be polished, the flatness information comprising at least one of flatness information of the silicon wafer to be polished before polishing and flatness information of the silicon wafer to be polished during polishing;

[0027] Based on the flatness information, obtaining deformation differences of the bearing surface at different positions;

[0028] Based on the deformation difference, the operating parameters of the magnetic field generating unit are controlled to adapt the topography of the carrying surface to the flatness information of the silicon wafer to be polished.

[0029] The beneficial effects brought about by the embodiments of the present disclosure are as follows:

[0030] In the embodiment of the present disclosure, the polishing head assembly includes a magnetic field generating unit and an adsorption pad. The magnetic field generating unit can generate a magnetic field. The adsorption pad is arranged in the area where the magnetic field is located, and the adsorption pad includes a magnetostrictive layer and a contact layer. The magnetostrictive layer can respond to the magnetic field and produce different deformation amounts at different positions, and the bearing surface of the contact layer can produce morphological changes that are adapted to the deformation amount of the magnetostrictive layer. In this way, by controlling the working parameters of the magnetic field generating unit, the morphology of the adsorption pad can be changed, and the morphology of different positions of the adsorption pad can be precisely controlled to adapt to the polishing requirements of silicon wafers with different surface morphologies, achieve precise polishing of local areas of the silicon wafers, and improve the polishing quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 A schematic diagram showing the structure of a polishing device in some embodiments of the present disclosure;

[0032] Figure 2 A schematic diagram showing a partial cross-sectional structure of an adsorption pad in some embodiments of the present disclosure;

[0033] Figure 3 One of the schematic diagrams showing the distribution of sub-areas on the adsorption pad in an embodiment of the present disclosure;

[0034] Figure 4 A second schematic diagram showing the distribution of sub-areas on the adsorption pad in an embodiment of the present disclosure;

[0035] Figure 5 Schematic diagram showing the distribution of sub-magnetic control units in an embodiment of the present disclosure. DETAILED DESCRIPTION

[0036] To make the purpose, technical solutions, and advantages of the embodiments of the present disclosure more clear, the technical solutions of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, not all of the embodiments. Based on the described embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0037] Unless otherwise defined, the technical or scientific terms used in this disclosure should have the usual meanings understood by people with ordinary skills in the field to which this disclosure belongs. The words "first", "second" and similar words used in this disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, words such as "one", "an" or "the" do not indicate a quantity limitation, but rather indicate the existence of at least one. Words such as "include" or "comprise" mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Words such as "connect" or "connected" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the object being described changes, the relative positional relationship may also change accordingly.

[0038] As used in the embodiments of the present disclosure, the terms "parallel," "perpendicular," and "identical" include the strict sense of "parallel," "perpendicular," and "identical," as well as "approximately parallel," "approximately perpendicular," and "approximately identical" with respect to a certain tolerance, which, taking into account the tolerances associated with the measurement of a particular quantity (e.g., limitations of the measurement system), means within an acceptable range of deviation for a particular value as determined by one of ordinary skill in the art. For example, "approximately" can mean within one or more standard deviations, or within 3% or 5% of the stated value.

[0039] In addition, in this document, unless otherwise defined, the terms "substantially," "essentially," "approximately," and "about" are used to describe and explain small variations. When used in connection with an event or circumstance, these terms can encompass situations where the event or circumstance occurs exactly, as well as situations where the event or circumstance occurs approximately. For example, when used in connection with a numerical value, these terms can include a range of variation of less than or equal to 10% of the numerical value, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, less than or equal to ±0.05%. The term "substantially coplanar" can refer to two surfaces being aligned along the same plane within the micrometer range, for example, within 40 μm, 30 μm, 20 μm, 10 μm, or 1 μm.

[0040] It should be understood that in the exemplary embodiments of the present disclosure, when a layer or element is referred to as being on another layer or substrate, the layer or element may be directly on the other layer or substrate, or an intervening layer may exist between the layer or element and the other layer or substrate. "A and B are disposed on the same layer" means that A and B are formed using the same film-forming process to form a film layer for forming a specific pattern, and then the layer structure is formed using the same mask through a single patterning process.

[0041] During the silicon wafer manufacturing process, wafers need to be polished to improve their flatness. Final polishing of silicon wafers is performed on a final polisher using a slurry and a polishing pad (PAD) to perform a chemical mechanical reaction on the front side of a wafer, such as a 300mm wafer. This process improves the roughness, flatness, and nanotopography of the front side, and removes particles.

[0042] With technological advancements, the requirements for nanometer-level flatness on silicon wafer surfaces are becoming increasingly stringent. To improve the nanometer surface flatness of silicon wafers, the manufacturing process typically includes two key steps: double-side polishing and final polishing. In double-side polishing, both the front and back sides of the silicon wafer are polished; in final polishing, the focus is on polishing the front side of the silicon wafer. During the final polishing process, the silicon wafer is adsorbed onto the adsorption pad of the polishing head assembly. The polishing plate is located below the polishing head assembly. The polishing head assembly and polishing plate apply pressure toward each other, pressing the polishing head assembly against the upper surface of the silicon wafer and the lower surface of the silicon wafer against the polishing plate.

[0043] The final polishing process determines the wafer's ultimate flatness and nanotopography. However, in related technologies, the fixed-shape adsorption pads are difficult to adapt to the polishing needs of silicon wafers with different morphologies, and cannot achieve precise polishing of localized areas of the wafer.

[0044] In order to improve the above problems, embodiments of the present disclosure provide a polishing head assembly, a control device, a polishing apparatus, and a polishing method.

[0045] like Figure 1 and Figure 2 As shown, the polishing head assembly provided by the embodiment of the present disclosure includes:

[0046] A magnetic field generating unit 100, for generating a magnetic field; and

[0047] The adsorption pad 200 is arranged in the area where the magnetic field is located. The adsorption pad 200 includes a magnetostrictive layer 210 and a contact layer 220. The contact layer 220 has a bearing surface for bearing the silicon wafer 300 to be polished. The magnetostrictive layer 210 is arranged on the side of the contact layer 220 away from the bearing surface; the magnetostrictive layer 210 is configured to respond to the magnetic field and generate different deformation amounts along a first direction Z at different positions. The first direction Z is perpendicular to the bearing surface; the contact layer 220 is configured to generate morphological changes on the bearing surface that are adapted to the deformation amount of the magnetostrictive layer 210.

[0048] In the above scheme, the polishing head assembly includes a magnetic field generating unit 100 and an adsorption pad 200. The magnetic field generating unit 100 can generate a magnetic field. The magnetic field adsorption pads 200 in different areas of the magnetic field are arranged in the area where the magnetic field is located, and the adsorption pad 200 includes a magnetostrictive layer 210 and a contact layer 220. The contact layer 220 can be used to contact the silicon wafer 300 to be polished. The magnetostrictive layer 210 can respond to the magnetic field and generate different deformation amounts at different positions, and the bearing surface of the contact layer 220 can generate morphological changes that are adapted to the deformation amount of the magnetostrictive layer 210. In this way, by controlling the working parameters of the magnetic field generating unit 100, the morphology of the adsorption pad 200 can be changed to adapt to the surface morphology of the silicon wafer 300 to be polished, thereby adapting to the polishing requirements of silicon wafers with different surface morphologies, realizing precise polishing of local areas of the silicon wafer, and improving the polishing quality.

[0049] In some exemplary embodiments, Figure 2 As shown, the adsorption pad 200 further includes a covering layer 230, which covers at least one side of the magnetostrictive layer 210 facing away from the contact layer 220. The covering layer 230 can support and encapsulate the magnetostrictive layer 210. The covering layer 230 can be made of an elastically deformable material and is configured to produce a morphological change that adapts to the deformation of the magnetostrictive layer 210.

[0050] The adsorption pad 200 supports the silicon wafer 300 to be polished. For example, the adsorption pad 200 can secure the silicon wafer via vacuum suction. For example, the cover layer 230, the magnetostrictive layer 210, and the contact layer 220 can be provided with tiny channels or grooves that connect to a vacuum pump. This facilitates vacuum suction during polishing, effectively reducing slippage of the silicon wafer and improving polishing efficiency and uniformity.

[0051] In some embodiments, the adsorption pad 200 may include a support base and a retaining structure located on the support base. The support base is an important component for supporting and contacting the silicon wafer. The retaining structure can be used to retain the silicon wafer and can be annular, surrounding the periphery of the silicon wafer. The support base may be composed of a contact layer 220, a magnetostrictive layer 210, and a cover layer 230.

[0052] The contact layer 220 is used to contact the silicon wafer 300 to be polished. It can exhibit high flatness, wear resistance, and elasticity. Its topography changes accordingly with the deformation of the magnetostrictive layer to adapt to the surface topography of the silicon wafer 300 to be polished, ensuring that the wafer is not scratched or damaged during the polishing process. Both the cover layer 230 and the contact layer 220 can be made of elastically deformable materials, such as polyurethane (PU) or silicone.

[0053] Magnetostrictive deformation refers to the ability to deform under the influence of an external magnetic field. Magnetostrictive layer 210 is exposed to a nonuniform magnetic field, with different locations experiencing varying degrees of magnetic field influence, resulting in varying amounts of deformation. Therefore, the polishing pad's topography can be altered by controlling the magnetic field intensity or direction at different locations on the polishing pad.

[0054] In some embodiments, the magnetostrictive layer 210 can be made of a magnetostrictive material. The magnetostrictive layer 210 is configured to deform in response to changes in the magnetic field by altering the magnetic domains within the material. Magnetostrictive materials exhibit a direct magnetostrictive strain effect and are capable of deforming under an applied magnetic field. These deformations arise from changes in the magnetic domains within the material; that is, the material deforms by altering its internal magnetic alignment or phase transition. Magnetostrictive materials may include, for example, alloy materials such as gamma iron and nickel-iron alloys.

[0055] In other embodiments, the magnetostrictive layer 210 may further include: a base material layer, and magnetic particles embedded in the base material layer. The magnetostrictive layer 210 is configured to deform in response to changes in the magnetic field by changing the distribution state of the magnetic particles in the base material layer (e.g., uniform distribution, gradient distribution, or localized aggregation). In this way, by embedding magnetic particles in the base material layer, the magnetic particles are utilized to help achieve or enhance the deformation capability of the base material layer under the action of an external magnetic field. The base material layer may be a polymer or other base material, with magnetic field particles such as ferrite, neodymium iron boron, etc. embedded in the material.

[0056] It should be noted that the above is merely an exemplary description of the implementation of the magnetostrictive layer 210 , and the implementation of the magnetostrictive layer 210 is not limited thereto.

[0057] Furthermore, in some embodiments, Figures 3 to 5 As shown, the contact layer 220 includes multiple sub-regions P; the magnetic field generating unit 100 includes multiple sub-magnetic control units 110, with each sub-magnetic control unit 110 corresponding to each sub-region P. The magnetic field conditions of different sub-magnetic control units 110 can be independently controlled, so that the magnetic field conditions in different sub-regions P can be different, where the magnetic field conditions include at least one of magnetic field intensity and magnetic field direction. In this way, the magnetic field intensity and / or magnetic field direction of each sub-magnetic control unit 110 can be independently controllable. By differentially controlling and adjusting the sub-magnetic control units 110 corresponding to different sub-regions P, the magnetic field distribution can be flexibly changed, thereby achieving high-precision control of the magnetic field in different regions and thus changing the morphology of the adsorption pad 200.

[0058] The sub-magnetic control unit 110 may be an electromagnet; alternatively, the sub-magnetic control unit 110 may be an electromagnetic coil. The electromagnet may include an iron core made of a high magnetic permeability material (such as iron) and a coil wound around the iron core. When current passes through the coil, the coil generates a magnetic field, and the iron core enhances the magnetic field generated by the coil. The electromagnetic coil may be a coil wound with an insulated wire, and may not have an iron core or other reinforcing materials inside. The shape and size of the coil can be designed according to the current requirements and application.

[0059] It should be understood that the specific implementation of the sub-magnetic control unit 110 is not limited thereto.

[0060] The electromagnetic coil can be designed to be very compact, and its winding form and number of coils can be adjusted according to actual needs to adapt to different space constraints. If multi-point control is required, multiple small electromagnetic coils can be used, and each electromagnetic coil can be operated independently. The electromagnetic coil can change the strength and polarity of the magnetic field by adjusting the magnitude and direction of the voltage or current. This not only allows independent control of the magnetic field, but also allows dynamic adjustment of the magnetic field to adjust the magnetic field strength and gradient distribution at different positions in real time, thereby effectively controlling the deformation amount at different positions of the adsorption pad 200.

[0061] In some embodiments, as Figure 3 As shown, multiple sub-regions P are distributed in an array on the supporting surface. Accordingly, the sub-magnetic control units 110 can be distributed in an array. For example, using electromagnetic coils 111 as the sub-magnetic control units 110, multiple electromagnetic coils 111 can be distributed in an array, with each sub-magnetic control unit 110 corresponding to one electromagnetic coil 111. By distributing multiple sub-regions P in an array, the magnetic field at different locations of the polishing pad can be precisely controlled, thereby precisely changing the deformation of the polishing pad at different locations.

[0062] In other embodiments, Figure 4 As shown, each sub-area P is an annular area surrounding the center of the carrying surface, and multiple sub-areas P are arranged in a concentric circle in a direction from the center of the carrying surface to the edge of the carrying surface. Figure 5 As shown, taking the example of a magnetic field generating unit 100 including multiple electromagnetic coils 111, the multiple electromagnetic coils 111 are nested concentrically from the inside out, with each electromagnetic coil 111 forming a sub-magnetic control unit 110. By nesting multiple sub-regions P in a concentric circle, the magnetic field at different radial positions of the corresponding adsorption pad 200 can be controlled, thereby changing the deformation amount at different positions of the adsorption pad 200.

[0063] It should be noted that the above is only an example. In actual applications, the division method of the sub-regions P is not limited to this. The sub-regions P can be divided according to the flatness characteristics of different types of silicon wafers.

[0064] In addition, the present disclosure provides a control device, which is applied to the polishing head assembly of the present disclosure. The control device includes:

[0065] a receiving unit, configured to receive flatness information of the silicon wafer 300 to be polished, the flatness information including at least one of initial flatness information of the silicon wafer 300 to be polished before polishing and real-time flatness information of the silicon wafer 300 to be polished during the polishing process;

[0066] an acquiring unit connected to the receiving unit, and configured to acquire deformation differences of the bearing surface at different positions based on the flatness information;

[0067] The control unit is connected to the acquisition unit and the magnetic field generating unit 100 respectively. The control unit is configured to control the working parameters of the magnetic field generating unit 100 based on the deformation difference so that the morphology of the carrying surface is adapted to the flatness information of the silicon wafer 300 to be polished.

[0068] The above scheme can obtain the desired morphology of the adsorption pad 200 based on the flatness information of the silicon wafer 300 to be polished, that is, the deformation difference at different positions can be obtained by calculation, so that the working parameters of the magnetic field generating unit 100 can be controlled according to this data to form the desired morphology of the adsorption pad 200.

[0069] It should be noted that the flatness information of the silicon wafer 300 to be polished may include dimensional parameters such as the thickness of the silicon wafer and the surface morphology of the silicon wafer.

[0070] The flatness information of the silicon wafer 300 to be polished can include the initial flatness information of the silicon wafer 300 to be polished before polishing. Thus, during polishing, the polishing apparatus is activated, and the control unit can control the magnetic field generating unit 100 to generate an initial magnetic field based on the operating parameters of the magnetic field generating unit 100, causing the adsorption pad 200 to undergo a corresponding initial deformation and initially contact the surface of the silicon wafer 300 to be polished. It should be noted that the intensity and distribution of the initial magnetic field are pre-set based on the initial approximate shape and size of the silicon wafer 300 to be polished, in order to cause the adsorption pad 200 to undergo a corresponding deformation and initially contact the silicon wafer surface.

[0071] The flatness information of the silicon wafer 300 to be polished may also include real-time flatness information of the silicon wafer 300 to be polished during the polishing process. During the polishing process, the working parameters (such as voltage / current) of the magnetic field generating unit 100 are adjusted in real time according to the thickness and morphology of the incoming silicon wafer, and the high-precision deformation of the adsorption pad 200 is controlled to polish the silicon wafer uniformly and efficiently. It should be noted that the real-time flatness information of the silicon wafer 300 to be polished during the polishing process can be obtained by using any suitable device such as a spectral confocal displacement sensor to monitor the surface of the silicon wafer 300 to be polished in real time during the polishing process, so as to fine-tune the deformation of the adsorption pad 200 in real time and ensure better fit between the adsorption pad 200 and the silicon wafer surface.

[0072] Obviously, the control device provided in the embodiment of the present disclosure also has the technical effects brought by the adsorption pad 200 in the embodiment of the present disclosure, which will not be described in detail here.

[0073] In addition, an embodiment of the present disclosure provides a polishing device, comprising:

[0074] The polishing head assembly 10 of the disclosed embodiment; and

[0075] The control device 20 includes:

[0076] a receiving unit, configured to receive flatness information of the silicon wafer 300 to be polished, the flatness information including at least one of initial flatness information of the silicon wafer 300 to be polished before polishing and real-time flatness information of the silicon wafer 300 to be polished during the polishing process;

[0077] an acquiring unit connected to the receiving unit, and configured to acquire deformation differences of the bearing surface at different positions based on the flatness information;

[0078] The control unit is connected to the acquisition unit and the magnetic field generating unit 100 respectively. The control unit is configured to control the working parameters of the magnetic field generating unit 100 based on the deformation difference so that the morphology of the carrying surface is adapted to the flatness information of the silicon wafer 300 to be polished.

[0079] In addition, if Figure 1 As shown, the polishing device may further include a polishing plate 400 located below the polishing head assembly. In some embodiments, the control device 20 may further control the entire polishing plate 400 to perform polishing. The polishing device may further include an operating unit for human-computer interaction. The receiving unit, the acquiring unit, and the control unit may be integrated.

[0080] When polishing a silicon wafer to be polished, the staff inputs the initial flatness information of the silicon wafer to be polished through the operating unit, the receiving unit receives the above flatness information, and the acquisition unit obtains the deformation difference at different positions of the adsorption pad 200 based on the above flatness information, so that the working parameters of the magnetic field generating unit 100 can be controlled based on this data to adjust the morphology of the adsorption pad 200 to match the morphology of the silicon wafer.

[0081] Obviously, the polishing equipment provided by the embodiment of the present disclosure also has the technical effects brought by the adsorption pad 200 of the embodiment of the present disclosure, which will not be described in detail here.

[0082] The present disclosure also provides a polishing method, which is applied to the polishing device of the present disclosure. The polishing method includes:

[0083] Step S01: receiving flatness information of a silicon wafer 300 to be polished, where the flatness information includes at least one of flatness information of the silicon wafer 300 to be polished before polishing and flatness information of the silicon wafer 300 to be polished during polishing;

[0084] Step S02: obtaining the deformation difference of the bearing surface at different positions based on the flatness information;

[0085] Step S03: Based on the deformation difference, the working parameters of the magnetic field generating unit 100 are controlled to adapt the topography of the carrying surface to the flatness information of the silicon wafer 300 to be polished.

[0086] Obviously, the polishing method provided by the embodiment of the present disclosure also has the technical effects brought by the adsorption pad 200 of the embodiment of the present disclosure, which will not be described in detail here.

[0087] The present application also provides a computer-readable storage medium storing a computer program. When executed by a processor, the computer program implements the various processes of the above-described silicon wafer polishing method embodiment and achieves the same technical effects. To avoid repetition, the description is omitted here. The computer-readable storage medium may be, for example, a read-only memory (ROM), a random access memory (RAM), a magnetic disk, or an optical disk.

[0088] There are a few points to note:

[0089] (1) The drawings of the embodiments of the present disclosure only relate to the structures related to the embodiments of the present disclosure. Other structures may refer to conventional designs.

[0090] (2) For the sake of clarity, the thickness of layers or regions in the drawings used to describe the embodiments of the present disclosure are exaggerated or reduced, i.e., these drawings are not drawn to scale. It is understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "under" another element, the element may be "directly" "on" or "under" the other element or intervening elements may be present.

[0091] (3) In the absence of conflict, the embodiments of the present disclosure and the features therein may be combined with each other to form new embodiments.

[0092] The above are only specific embodiments of the present disclosure, but the protection scope of the present disclosure is not limited thereto. The protection scope of the present disclosure should be based on the protection scope of the claims.

Claims

1. A polishing head assembly, characterized in that: include: A magnetic field generating unit, used for generating a magnetic field; and An adsorption pad is arranged in the area where the magnetic field is located, the adsorption pad includes a magnetostrictive layer and a contact layer, the contact layer has a bearing surface for bearing the silicon wafer to be polished, and the magnetostrictive layer is arranged on the side of the contact layer away from the bearing surface; the magnetostrictive layer is configured to respond to the magnetic field and generate different deformation amounts along a first direction at different positions, and the first direction is perpendicular to the bearing surface; the contact layer is configured to generate a morphological change on the bearing surface that is adapted to the deformation amount of the magnetostrictive layer.

2. The polishing head assembly according to claim 1, wherein: The adsorption pad also includes a covering layer, which covers at least the side of the magnetostrictive layer facing away from the contact layer, and the covering layer is made of an elastic deformable material. The covering layer is configured to produce a morphological change that is adapted to the deformation of the magnetostrictive layer.

3. The polishing head assembly according to claim 1, wherein: The magnetostrictive layer is made of magnetostrictive material and is used to deform in response to changes in the magnetic field by changing the magnetic domain inside the material; Alternatively, the magnetostrictive layer includes: a matrix material layer, and magnetic particles embedded in the matrix material layer, and the magnetostrictive layer is configured to deform in response to changes in the magnetic field by changing the distribution state of the magnetic particles in the matrix material layer.

4. The polishing head assembly according to claim 1, wherein: The contact layer includes multiple sub-regions, and the magnetic field generating unit includes multiple sub-magnetic control units. One sub-magnetic control unit is arranged corresponding to one sub-region, and the magnetic field conditions of different sub-magnetic control units can be controlled independently of each other so that the magnetic field conditions of different sub-regions can be different, wherein the magnetic field conditions include at least one of magnetic field intensity and magnetic field direction.

5. The polishing head assembly according to claim 4, characterized in that The sub-magnetic control unit includes an electromagnet and / or an electromagnetic coil.

6. The polishing head assembly according to claim 4, characterized in that The multiple sub-regions are distributed in an array on the carrying surface; or, each sub-region is an annular region surrounding the center of the carrying surface, and the multiple sub-regions are arranged in sequence in concentric circles along a direction from the center of the carrying surface to the edge of the carrying surface.

7. The polishing head assembly according to claim 5, characterized in that When the multiple sub-regions are arranged in sequence in concentric circles along a direction from the center of the carrying surface to the edge of the carrying surface, the magnetic field generating unit includes a plurality of electromagnetic coils, and the multiple electromagnetic coils are nested in concentric circles from the inside to the outside, and one electromagnetic coil forms a sub-magnetic control unit.

8. A control device, characterized in that: Applicable to the polishing head assembly according to any one of claims 1 to 7; the control device comprises: a receiving unit, configured to receive flatness information of a silicon wafer to be polished, wherein the flatness information includes at least one of initial flatness information of the silicon wafer to be polished before polishing and real-time flatness information of the silicon wafer to be polished during the polishing process; an acquiring unit connected to the receiving unit, and configured to acquire deformation differences of the bearing surface at different positions based on the flatness information; A control unit is connected to the acquisition unit and the magnetic field generating unit respectively, and the control unit is configured to control the working parameters of the magnetic field generating unit based on the deformation difference so that the morphology of the carrying surface is adapted to the flatness information of the silicon wafer to be polished.

9. A polishing device, characterized in that: include: The polishing head assembly according to any one of claims 1 to 7; and A control device, comprising: a receiving unit, configured to receive flatness information of a silicon wafer to be polished, wherein the flatness information includes at least one of initial flatness information of the silicon wafer to be polished before polishing and real-time flatness information of the silicon wafer to be polished during the polishing process; an acquiring unit connected to the receiving unit, and configured to acquire deformation differences of the bearing surface at different positions based on the flatness information; A control unit is connected to the acquisition unit and the magnetic field generating unit respectively, and the control unit is configured to control the working parameters of the magnetic field generating unit based on the deformation difference so that the morphology of the carrying surface is adapted to the flatness information of the silicon wafer to be polished.

10. A polishing method, characterized in that: Applied to the polishing apparatus according to claim 9, the polishing method comprises: receiving flatness information of a silicon wafer to be polished, the flatness information comprising at least one of flatness information of the silicon wafer to be polished before polishing and flatness information of the silicon wafer to be polished during polishing; Based on the flatness information, obtaining deformation differences of the bearing surface at different positions; Based on the deformation difference, the operating parameters of the magnetic field generating unit are controlled to adapt the topography of the carrying surface to the flatness information of the silicon wafer to be polished.

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