Heat-resistant resin, photoresist composition thereof and display device

Abstract

The invention belongs to the technical field of materials, and particularly relates to heat-resistant resin, a photoresist composition thereof and a display device. The heat-resistant resin has a structure shown in a general formula I, a unit A of the heat-resistant resin is an olefinic unsaturated ester unit, and the polymerization degree a of the heat-resistant resin is an integer of 1-30; the unit B is an unsaturated carboxylic acid unit, and the polymerization degree b of the unsaturated carboxylic acid unit is an integer of 1-30; the unit C is an olefinic unsaturated unit, and the polymerization degree c of the unit C is an integer from 1 to 30; the unit D is an N-substituted maleimide unit, and the polymerization degree d of the unit D is an integer of 1-30. The photoresist composition provided by the invention has good bonding strength, heat resistance and film-forming property, and can form flat, complete and high-precision patterns.

Description

Technical Field

[0001] The present invention belongs to the technical field of materials, and in particular relates to a heat-resistant resin, a photoresist composition thereof and a display device. Background Art

[0002] In recent years, with the rapid development of electronic information technology, a variety of new display devices, such as liquid crystal displays (LCDs), organic light-emitting diodes (OLEDs), and quantum dot displays, have emerged. These advanced display devices place extremely high demands on the precision and reliability of photolithography processes. In display panel manufacturing, photosensitive resin compositions are key materials for forming microscopic patterns. Their film-forming properties directly impact photolithography accuracy, pixel density, and the durability of display devices.

[0003] However, the photosensitive resin compositions currently used for high-resolution displays present a number of problems. For example, in the production of 4K / 8K ultra-high-definition OLED evaporation masks, traditional photosensitive resins, due to their insufficient high-temperature resistance, are prone to thermal decomposition or softening and deformation in high-temperature evaporation environments, resulting in impaired photolithographic pattern accuracy, affecting pixel density and display quality. Another example is when constructing the multi-layer thin film structure of quantum dot display panels, the existing photosensitive adhesive does not adhere firmly to the underlying organic light-emitting layer, and delamination often occurs during the subsequent packaging process, reducing device life by more than 70%, increasing production costs and increasing the maintenance burden.

[0004] As the global display industry rapidly develops toward higher resolution, flexible foldable displays, and miniaturization, the market is placing increasingly stringent demands on the performance of photosensitive resin compositions. Developing new photosensitive resin compositions that combine fast curing, high-temperature resistance, high photosensitivity, and high environmental stability has become crucial for overcoming bottlenecks in industry development and achieving industrial upgrading. Summary of the Invention

[0005] To address the deficiencies of the prior art, the present invention provides a heat-resistant resin, a photoresist composition thereof, and a display device. The photoresist composition provided by the present invention has good bonding strength, heat resistance, and film-forming properties, and can form a flat, complete, and high-precision pattern.

[0006] The technical solutions provided by the present invention are as follows:

[0007] A heat-resistant resin is a copolymer represented by formula 1, which is as follows:

[0008]

[0009] in:

[0010] Unit A is an ethylenically unsaturated ester unit, and its degree of polymerization a is an integer of 1-30;

[0011] Unit B is an unsaturated carboxylic acid unit, and its degree of polymerization b is an integer of 1-30;

[0012] Unit C is an ethylenically unsaturated unit, and its degree of polymerization c is an integer of 1-30;

[0013] Unit D is an N-substituted maleimide unit, and its degree of polymerization d is an integer of 1-30;

[0014] R1 in each unit is the same or different and represents H or a methyl group; R2 represents a divalent linking group; R3 represents H or a functional group reactive with a carboxyl group; R4 represents a monovalent organic group having a carboxyl group at the end; Ar1 ​​represents an aromatic group having 6 to 30 carbon atoms; and R5 represents a chain aliphatic group having 1 to 30 carbon atoms, which may be substituted or unsubstituted with a maleimide group at the end. The chain may be straight and / or branched.

[0015] In R5, the chain is straight chain and / or branched chain. Specifically, the chain aliphatic group is C 10-30 Preferably, C 15-30 More preferably, C 15-20 of a straight chain alkyl group.

[0016] It should be noted that the positions of unit A, unit B, unit C, and unit D in the above formula 1 on the polymer chain are not particularly limited. That is, the heat-resistant resin is a random copolymer or a block copolymer. Preferably, the heat-resistant resin is a random copolymer, and R1-R5, Ar1, a, b, c, and d meet the above definitions to achieve the technical effects of the present invention.

[0017] The heat-resistant resin provided by the present invention can be obtained by reacting monomers corresponding to unit A, unit B, unit C and unit D, wherein the copolymerization method is a double bond-based copolymerization.

[0018] Specifically:

[0019] The monomers forming unit A account for 5% to 25% by weight of the total monomers.

[0020] The monomers forming unit B account for 3% to 10% by weight of the total monomers.

[0021] The monomers forming unit C account for 1% to 10% by weight of the total monomers.

[0022] The monomers forming the unit D account for 1% to 10% by weight of the total monomers.

[0023] The balance includes solvents, initiators, etc., which can be selected from commonly used reagents in the prior art.

[0024] For unit D, specifically, unit D is derived from an N-substituted maleimide monomer, and examples thereof include: 1-decylpyrrole-2,5-dione, N-undecylalkylmaleimide, N-dodecylalkylmaleimide, N-tridecylalkylmaleimide, N-tetradecylalkylmaleimide, N-pentadecylalkylmaleimide, N-hexadecylalkylmaleimide, N-octadecylalkylmaleimide, etc.

[0025] For unit A, specifically, the functional group that can react with the carboxyl group is selected from an epoxy group or a hydroxyl group.

[0026] Furthermore, during the cross-linking process of the heat-resistant resin, the epoxy group or hydroxyl group on the side chain of unit A further cross-links with the carboxyl group on the side chain of unit B, thereby increasing the cross-linking density of the heat-resistant resin and further improving the heat resistance and film-forming properties of the resin.

[0027] Preferably, unit A has a unit represented by formula A-1 or formula A-2:

[0028] a = a1 + a2, where a1 and a2 are numbers from 0 to 30; R6 represents a divalent linking group, R7 is selected from H and an epoxy group, and Ar1 is selected from a group containing an aromatic hydrocarbon group and 0 to 2 phenolic hydroxyl groups. It can be understood that the unit A in the heat-resistant resin may include a unit represented by formula A-1, a unit represented by formula A-2, or both.

[0029] Specifically, the divalent linking group is an alkyl group with 1 to 15 carbon atoms, an aryl group with 6 to 30 carbon atoms, or a combination thereof.

[0030] Specifically, the alkyl group having 1 to 15 carbon atoms may be a linear, branched or cyclic alkyl group.

[0031] Preferably, when R7 is selected from H, the unit represented by formula A-1 is derived from a monofunctional (meth)acrylate compound.

[0032] The (meth)acrylate compound is not particularly limited, and examples thereof include: alkyl (meth)acrylates such as methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, butyl (meth)acrylate, and 2-ethylhexyl (meth)acrylate; (meth)acrylates containing alicyclic structures such as cyclohexyl (meth)acrylate, isobornyl (meth)acrylate, and dicyclopentanyl (meth)acrylate; and (meth)acrylates containing aromatic rings such as phenyl (meth)acrylate, benzyl (meth)acrylate, and phenoxyethyl acrylate.

[0033] Preferably, when R7 is selected from an epoxy group, the divalent linking group is preferably an alkylene group having 1 to 15 carbon atoms.

[0034] The unit represented by Formula A-1 is derived from a (meth)acrylate compound, and examples thereof include glycidyl methacrylate, 3,4-epoxycyclohexyl methacrylate, epoxypropyl (meth)acrylate, and epoxybutyl (meth)acrylate.

[0035] Specifically, Ar2 is selected from a group containing an aromatic hydrocarbon group containing 0-2 phenolic hydroxyl groups, that is, a phenyl group containing 0, 1, or 2 hydroxyl groups. Preferably, it is a phenyl group containing 0 or 1 hydroxyl group.

[0036] Preferably, the group containing an aromatic hydrocarbon group is an aryl group having 6 to 30 carbon atoms.

[0037] More preferably, the aryl group having 6 to 30 carbon atoms is 2 to 3 phenyl groups connected by direct bonds, fusions, keto groups, C1 to C5 alkyl groups, heteroatoms, and the like.

[0038] Examples include, but are not limited to, substituted or unsubstituted biphenyl, substituted or unsubstituted terphenyl, substituted or unsubstituted quaterphenyl, substituted or unsubstituted naphthalene, substituted or unsubstituted anthracene, substituted or unsubstituted benzothracene, substituted or unsubstituted bisphenol A, substituted or unsubstituted bisphenol F, substituted or unsubstituted bisphenols, substituted or unsubstituted benzophenone, substituted or unsubstituted fluorene, and the like.

[0039] The unit represented by Formula A-1 may be derived from 4-hydroxyphenyl (meth)acrylate, hydroquinone (meth)acrylate, 3,5-dihydroxyphenol methacrylate, 1-naphthol methacrylate, 4-hydroxynaphthalene-1-methacrylate, or the like.

[0040] For unit B, specifically, R4 represents a monovalent organic group having one carboxyl group at the end of the main chain.

[0041] That is, the unit B is derived from an unsaturated monobasic acid.

[0042] The monovalent organic group is an alkyl group having 1 to 15 carbon atoms, an aryl group having 6 to 30 carbon atoms, or a combination thereof.

[0043] The monovalent organic group is preferably a straight-chain alkyl group having 1 to 15 carbon atoms.

[0044] Examples of the unsaturated monobasic acid containing an alkyl group having 1 to 15 carbon atoms, an aryl group having 6 to 30 carbon atoms, or a combination thereof include acrylic acid, methacrylic acid, (methyl)valeric acid, (methyl)hexanoic acid, and (methyl)heptanoic acid.

[0045] For unit C, specifically, Ar1 represents an aromatic group having 6 to 30 carbon atoms, which may include only a plurality of substituted or unsubstituted phenyl groups, or a combination of a plurality of substituted or unsubstituted phenyl groups and an alkyl group having 1 to 15 carbon atoms.

[0046] Preferably, the aryl group having 6 to 30 carbon atoms includes 1 to 3 substituted or unsubstituted phenyl groups, and the multiple phenyl groups are connected by single bonds, condensation, alkyl groups having 1 to 3 carbon atoms, and the like.

[0047] Unit C is derived from monomers, for example, styrene, 1-vinylnaphthalene, 1-ethyl-2-(phenylmethyl)benzene, vinylbiphenyl, and the like.

[0048] The photocurable oligomer provided in the present application has a weight average molecular weight Mw of 2000-20000, more preferably, a weight average molecular weight Mw of 5000-15000.

[0049] In a second aspect, the present invention provides a photoresist composition comprising 15-20 parts of the heat-resistant resin, 15-25 parts of a polymerizable monomer, 0.1-5 parts of a photopolymerization initiator, 50-75 parts of a solvent, and 0.1-5 parts of an auxiliary agent.

[0050] In the present invention, the photopolymerization initiator, solvent, and auxiliary agent are not particularly limited, and various common reagents used in the art can be used.

[0051] The auxiliary agent is selected from any one or more of a pigment, a surfactant, a photoacid generator, an adhesion enhancer, a defoamer, a leveling agent, a plasticizer, an antioxidant, a stabilizer or an inhibitor.

[0052] In a third aspect, the present invention provides an application of a photocurable composition, wherein the photocurable composition is used in a display device.

[0053] The photocurable composition provided by the present invention is applied to black photoresist, color photoresist, protective film photoresist, PS spacer and the like in display devices.

[0054] In a fourth aspect, the present invention provides a display device, which is a thin film transistor liquid crystal display device, an organic light emitting diode display device, a quantum dot light emitting diode display device or a micro light emitting diode display device.

[0055] The heat-resistant resin provided by the present invention selects monomers having high-temperature resistant maleimide groups and mixes and cross-links with monomers such as unsaturated carboxylic acid compounds, (meth)acrylate compounds, and aromatic compounds. By adjusting the structural selection of the compound monomers, the cross-linking density and performance of the resin are adjusted to obtain a resin that is resistant to high temperatures and has good film-forming properties. BRIEF DESCRIPTION OF THE DRAWINGS

[0056] Figure 1 These are photos of the photoresist composition 1 (No. 1), photoresist composition 2 (No. 2), and photoresist composition 3 (No. 3) provided by the present invention after being placed at 60° C. for 7 days. DETAILED DESCRIPTION

[0057] The principles and features of the present invention are described below. The examples given are only used to explain the present invention and are not used to limit the scope of the present invention.

[0058] If the specific conditions are not specified in the examples, the experiments were carried out under conventional conditions or those recommended by the manufacturer. All reagents or instruments used, if the manufacturer is not specified, are commercially available conventional products.

[0059] Heat-resistant resin example 1:

[0060] The invention comprises the following raw materials in weight fractions: 55 parts by weight of propylene glycol methyl ether acetate, 5 parts by weight of azobisisobutyronitrile, 10 parts by weight of N-methylmaleimide, 15 parts by weight of butyl methacrylate, 7 parts by weight of styrene, and 8 parts by weight of methacrylic acid;

[0061] preparation:

[0062] S1: In a 500 ml reaction flask, 10 parts by weight of propylene glycol methyl ether acetate was weighed, stirring was started at 200 rpm, nitrogen was introduced, and the temperature was raised to 120°C.

[0063] S2: 4 parts by weight of azobisisobutyronitrile and 13 parts by weight of propylene glycol methyl ether acetate were weighed into a three-necked flask and stirred at 500 rpm to dissolve; 10 parts by weight of N-methylmaleimide, 15 parts by weight of butyl methacrylate, and 7 parts by weight of styrene were weighed and stirred to dissolve; after the solution was completely dissolved, 8 parts by weight of methacrylic acid was weighed; the mixture was stirred for 15 minutes, replaced with nitrogen three times, and stirred for another 15 minutes; the material obtained by the reaction was added dropwise to the reaction flask in step S1 for 3 hours, and the reaction was kept at 120°C for 1 hour. After the reaction was completed, the temperature was lowered to 95°C.

[0064] S3: Weigh 0.5 parts by weight of azobisisobutyronitrile and dissolve it with 1 part by weight of propylene glycol methyl ether acetate, add the mixture to the reaction solution, and react at 95°C for 1 hour; repeat the operation once, cool to 70°C; add 30 parts by weight of propylene glycol methyl ether acetate, continue stirring for 1 hour, and cool to room temperature to obtain a heat-resistant resin with a weight-average molecular weight Mw of 13050.

[0065] Heat-resistant resin embodiment 2:

[0066] The preparation method was the same as that of the heat-resistant resin in Example 1, except that butyl methacrylate was replaced by benzyl acrylate to obtain a heat-resistant resin with a weight-average molecular weight Mw of 13,200.

[0067] Heat-resistant resin embodiment 3:

[0068] The preparation method is the same as that of heat-resistant resin Example 1, except that the raw materials are included in the following weight fractions: 55 parts by weight of propylene glycol methyl ether acetate, 5 parts by weight of azobisisobutyronitrile, 10 parts by weight of N-methylmaleimide, 10 parts by weight of benzyl acrylate, 5 parts by weight of epoxy methacrylate, 7 parts by weight of 5-phenyl-1-pentene, and 8 parts by weight of methacrylic acid.

[0069] A heat-resistant resin having a weight-average molecular weight Mw of 13180 was obtained.

[0070] Heat-resistant resin embodiment 4:

[0071] The preparation method is the same as that of heat-resistant resin Example 3, except that N-methylmaleimide is replaced by N-decylmaleimide.

[0072] A heat-resistant resin having a weight-average molecular weight Mw of 13,320 was obtained.

[0073] Heat-resistant resin embodiment 5:

[0074] The preparation method is the same as that of heat-resistant resin Example 4, except that it includes the following raw materials in weight fractions: 55 parts by weight of propylene glycol methyl ether acetate, 5 parts by weight of azobisisobutyronitrile, 10 parts by weight of N-decylmaleimide, 15 parts by weight of epoxy methacrylate, 7 parts by weight of 5-phenyl-1-pentene, and 8 parts by weight of methacrylic acid.

[0075] A heat-resistant resin having a weight-average molecular weight Mw of 13280 was obtained.

[0076] Heat-resistant resin embodiment 6:

[0077] The preparation method is the same as that of heat-resistant resin embodiment 4, except that the raw materials are included in the following weight fractions: 55 parts by weight of propylene glycol methyl ether acetate, 5 parts by weight of azobisisobutyronitrile, 10 parts by weight of N-pentadecylmaleimide, 15 parts by weight of benzyl acrylate, 7 parts by weight of 5-phenyl-1-pentene, and 8 parts by weight of methacrylic acid.

[0078] A heat-resistant resin having a weight-average molecular weight Mw of 13110 was obtained.

[0079] Heat-resistant resin embodiment 7:

[0080] The preparation method is the same as that of heat-resistant resin Example 6, except that it includes the following raw materials in weight fractions: 55 parts by weight of propylene glycol methyl ether acetate, 5 parts by weight of azobisisobutyronitrile, 10 parts by weight of N-pentadecylmaleimide, 8 parts by weight of butyl methacrylate, 7 parts by weight of epoxy methacrylate, 7 parts by weight of 5-phenyl-1-pentene, and 8 parts by weight of methacrylic acid.

[0081] A heat-resistant resin having a weight-average molecular weight Mw of 13270 was obtained.

[0082] Heat-resistant resin embodiment 8:

[0083] The preparation method is the same as that of Example 1 of the heat-resistant resin, except that the raw materials are included in the following weight fractions: 55 parts by weight of propylene glycol methyl ether acetate, 5 parts by weight of azobisisobutyronitrile, 10 parts by weight of N-octadecylmaleimide, 15 parts by weight of benzyl acrylate, 7 parts by weight of styrene, and 8 parts by weight of vinylphenylacetic acid.

[0084] A heat-resistant resin having a weight-average molecular weight Mw of 13090 was obtained.

[0085] Heat-resistant resin embodiment 9:

[0086] The preparation method is the same as that of Example 1 of the heat-resistant resin, except that the raw materials are included in the following weight fractions: 55 parts by weight of propylene glycol methyl ether acetate, 5 parts by weight of azobisisobutyronitrile, 10 parts by weight of N-octadecylmaleimide, 5 parts by weight of butyl methacrylate, 10 parts by weight of 4-(4-hydroxyphenyl)butyl-2-methyl-2-acrylate, 7 parts by weight of vinyl naphthalene, and 8 parts by weight of vinylphenylacetic acid.

[0087] A heat-resistant resin having a weight-average molecular weight Mw of 13310 was obtained.

[0088] Heat-resistant resin embodiment 10:

[0089] The preparation method is the same as that of heat-resistant resin Example 9, except that butyl methacrylate is replaced by 9-anthracene methacrylate.

[0090] A heat-resistant resin having a weight-average molecular weight Mw of 13290 was obtained.

[0091] Heat-resistant resin embodiment 11:

[0092] The preparation method is the same as that of Example 1 of the heat-resistant resin, except that the raw materials are included in the following weight fractions: 55 parts by weight of propylene glycol methyl ether acetate, 5 parts by weight of azobisisobutyronitrile, 10 parts by weight of bismaleimide butane, 15 parts by weight of butyl methacrylate, 7 parts by weight of styrene, and 8 parts by weight of vinylphenylacetic acid.

[0093] A heat-resistant resin having a weight average molecular weight Mw of 13140 was obtained.

[0094] Heat-resistant resin comparative example 1:

[0095] The preparation method is the same as that of the heat-resistant resin in Example 1, except that N-methylmaleimide is replaced by N-phenylmaleimide.

[0096] A heat-resistant resin having a weight-average molecular weight Mw of 13170 was obtained.

[0097] Heat-resistant resin comparative example 2:

[0098] The preparation method is the same as that of the heat-resistant resin comparative example 1, except that butyl methacrylate is replaced by decyl methacrylate.

[0099] A heat-resistant resin having a weight-average molecular weight Mw of 13180 was obtained.

[0100] Heat-resistant resin comparative example 3:

[0101] The preparation method is the same as that of the heat-resistant resin comparative example 6, except that N-pentadecylmaleimide is replaced by 4-maleimidophenol.

[0102] A heat-resistant resin having a weight-average molecular weight Mw of 13210 was obtained.

[0103] Heat-resistant resin comparative example 4:

[0104] The preparation method is the same as that of Example 1 of the heat-resistant resin, except that the raw materials are included in the following weight fractions: 70 parts by weight of propylene glycol methyl ether acetate, 5 parts by weight of azobisisobutyronitrile, 10 parts by weight of N-methylmaleimide, 7 parts by weight of styrene, and 8 parts by weight of methacrylic acid.

[0105] A heat-resistant resin having a weight-average molecular weight Mw of 13170 was obtained.

[0106] Preparation of photoresist composition 1:

[0107] 62 parts by weight of propylene glycol methyl ether acetate, 15 parts by weight of the heat-resistant resin obtained in Example 1, 10 parts by weight of butyl methacrylate, 8 parts by weight of bisether fluorene acrylate and 2 parts by weight of polyether-modified polydimethylsiloxane were added to a reaction kettle and stirred. The temperature was controlled at about 35° C. and stirred evenly. Then, 3 parts by weight of 4-phenylbenzophenone was added and stirred evenly to obtain a photosensitive resin composition.

[0108] Preparation of photoresist composition 2-11:

[0109] The preparation method of the photoresist composition is the same as that of Example 1, except that the heat-resistant resin obtained in Example 1 is replaced by the heat-resistant resin obtained in Examples 2-11.

[0110] Preparation of Comparative Examples 1-4 of Photoresist Compositions:

[0111] The preparation method is the same as that of Example 1 of the photosensitive resin composition, except that the heat-resistant resin obtained in Example 1 is replaced by the heat-resistant resin obtained in Comparative Examples 1-4.

[0112] Performance testing:

[0113] Thermal decomposition temperature: The thermal decomposition temperature of the samples was measured using a thermogravimetric-differential thermal analyzer under a N2 atmosphere.

[0114] Anti-etching: A thin film with a thickness of 200 nm was coated on the substrate and baked at 110°C for 180 seconds. The initial thickness was then measured with a film thickness meter. The film was exposed to 365 nm ultraviolet light with a distance of 0 μm between the mask and the coating. The film was developed with a 2.38 wt% tetramethylammonium hydroxide solution (TMAH) for 60 seconds and then rinsed with water. The film was then blown dry with N2, the film thickness was measured, and the film retention rate was calculated.

[0115] Line Edge Roughness (LER): A 50nm line pattern was observed using a length-measuring scanning electron microscope (SEM). The distance between the edge and the reference line at 50 points within a 5μm range in the length direction of the line pattern was measured using the length-measuring SEM. The standard deviation was determined, and 3σ was calculated.

[0116] The test results are shown in Table 1 below:

[0117] Table 1

[0118]

[0119] As can be seen from the table above, the structural units of the heat-resistant resin represented by Formula 1 provided by the present invention act synergistically, achieving a heat-resistant temperature above 270°C, excellent etching resistance, and pattern precision. In particular, when the polymer simultaneously contains the structural units represented by Formulas A-1 and A-2 (Examples 3, 4, 7, 9, and 10), the heat-resistant temperature, etching resistance, and pattern precision of the photoresist composition incorporating such polymers are significantly improved.

[0120] On the other hand, the photoresist composition containing the heat-resistant resin provided by the present invention can inhibit the quinone structure generation path during the baking process. Figure 1It can be seen that compared with the yellowing that occurs in the comparative example during application, the heat-resistant resin photoresist composition provided by the present invention exhibits a colorless and transparent physical form after being placed in a 60°C environment for 7 days. This property makes it particularly advantageous in applications such as color photoresist and black photoresist, and can obtain pure colors or improve light sensitivity, thereby meeting the requirements of large-screen high-definition displays.

[0121] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A heat-resistant resin, characterized in that It is a copolymer shown in general formula 1, which is as follows: in: Unit A is an ethylenically unsaturated ester unit, and its degree of polymerization a is an integer of 1-30; Unit B is an unsaturated carboxylic acid unit, and its degree of polymerization b is an integer of 1-30; Unit C is an ethylenically unsaturated unit, and its degree of polymerization c is an integer of 1-30; Unit D is an N-substituted maleimide unit, and its degree of polymerization d is an integer of 1-30; R1 in each unit is the same or different and represents H or a methyl group; R2 represents a divalent linking group; R3 represents H or a functional group that can react with a carboxyl group; R4 represents a monovalent organic group having a carboxyl group at the end; Ar1 ​​represents an alkyl group with 1 to 30 carbon atoms, an aromatic group with 6 to 30 carbon atoms, or a combination thereof; R5 represents a chain aliphatic group with 1 to 30 carbon atoms, which is substituted or unsubstituted with a maleimide group at the end.

2. The heat-resistant resin according to claim 1, wherein: The chain aliphatic group is C 10-30 of a straight chain alkyl group.

3. The heat-resistant resin according to claim 1, wherein: The functional group capable of reacting with a carboxyl group is selected from an epoxy group or a hydroxyl group.

4. The heat-resistant resin according to claim 1, wherein The unit A comprises a structure represented by the general formula A-1 or A-2: a=a1+a2, where a1 and a2 are integers from 0 to 30 respectively; R6 represents an alkyl group having 1 to 15 carbon atoms, an aryl group having 6 to 30 carbon atoms, or a combination thereof; R7 is selected from H, epoxy; Ar2 is selected from a group containing 0, 1 or 2 phenolic hydroxyl groups and an aromatic hydrocarbon group.

5. The heat-resistant resin according to claim 4, wherein: The aromatic hydrocarbon group is an aryl group having 6 to 30 carbon atoms.

6. The heat-resistant resin according to claim 1, wherein: The number of carboxyl groups in R4 is one.

7. The heat-resistant resin according to claim 1, wherein: The monovalent organic group is an alkyl group having 1 to 15 carbon atoms, an aryl group having 6 to 30 carbon atoms, or a combination thereof.

8. A photoresist composition, characterized in that: The invention comprises 15-20 parts of the heat-resistant resin according to any one of claims 1 to 7, 15-25 parts of a polymerization monomer, 0.1-5 parts of a photopolymerization initiator, 50-75 parts of a solvent and 0.1-5 parts of an auxiliary agent.

9. A display device, characterized in that: A material comprising the photoresist composition according to claim 8.

10. The display device according to claim 9, wherein: The display device is a thin film transistor liquid crystal display device, an organic light emitting diode display device, a quantum dot light emitting diode display device or a micro light emitting diode display device.

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