Quantum dot composition, quantum dot thin film patterning method and related device and device

Abstract

The invention discloses a quantum dot composition, a quantum dot film patterning method and a related device and device. The quantum dot composition comprises a quantum dot body; the light transmittance of the hollow nanoparticles is greater than that of the quantum dot body; the first ligand is connected with the quantum dot body; or, the second ligand is connected with the hollow nanoparticles, and the first ligand is connected with the quantum dot body; the third ligand is connected with the quantum dot body and / or the hollow nanoparticles; the third ligand comprises a photosensitive group; wherein the photosensitive group is configured to be subjected to a cross-linking reaction with a first ligand connected to an adjacent quantum dot body and / or a second ligand connected to an adjacent hollow nanoparticle. The light transmittance of the quantum dot film layer can be improved, so that energy and time required by light curing are reduced, the damage probability of the quantum dot body is reduced, and the light emitting performance and the display effect of the display device are improved.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to quantum dot compositions, quantum dot film patterning methods, and related devices and apparatuses. Background Art

[0002] Semiconductor quantum dots (QD) are an important fluorescent nanomaterial. Using quantum dot materials as light-emitting layer materials in the field of optoelectronic displays is gradually becoming a future development trend.

[0003] In the prior art, quantum dot patterning is typically achieved through inkjet printing or photolithography. However, the prior art is unable to produce quantum dot films with high transmittance and good performance. Summary of the Invention

[0004] In order to solve the above problems or other problems, this application provides the following technical solutions.

[0005] The first technical solution adopted in the present application is to provide a quantum dot composition, including: a quantum dot body; hollow nanoparticles, the transmittance of the hollow nanoparticles is greater than the transmittance of the quantum dot body; a first ligand, connected to the quantum dot body; or, a second ligand, connected to the hollow nanoparticles, the first ligand is connected to the quantum dot body; a third ligand, connected to the quantum dot body and / or the hollow nanoparticles, the third ligand includes a photosensitive group; wherein the photosensitive group is configured to undergo a cross-linking reaction with the first ligand connected to the adjacent quantum dot body and / or the second ligand connected to the adjacent hollow nanoparticle.

[0006] The hollow nanoparticles include at least one of hollow silica nanoparticles, hollow titanium dioxide nanoparticles, hollow zinc dioxide nanoparticles and hollow aluminum oxide nanoparticles.

[0007] In which, both the quantum dot body and the hollow nanoparticle are connected to a third ligand; in which, the photosensitive group in the third ligand connected to the quantum dot body is configured to undergo a cross-linking reaction with the second ligand connected to the adjacent hollow nanoparticle, and the photosensitive group in the third ligand connected to the hollow nanoparticle is configured to undergo a cross-linking reaction with the first ligand connected to the adjacent quantum dot body.

[0008] Only the quantum dot body is connected to the third ligand; and the photosensitive group in the third ligand connected to the quantum dot body is configured to undergo a cross-linking reaction with the second ligand connected to the adjacent hollow nanoparticle.

[0009] Only the hollow nanoparticles are connected to the third ligand; and the photosensitive group in the third ligand connected to the hollow nanoparticles is configured to undergo a cross-linking reaction with the first ligand connected to the adjacent quantum dot body.

[0010] Among them, the photosensitive group includes at least one of a benzophenone group, a benzophenone group, an azide group, a pure nitrogen group, a carbon-oxygen double bond group, a carbon-carbon double bond group, a carbon-nitrogen double bond group and a double electron-donating group; the first ligand, the second ligand and the third ligand include at least one of a carboxyl group, an amino group and a thiol group.

[0011] wherein the number of quantum dot bodies in the quantum dot composition is a first value, the number of hollow nanoparticles is a second value, and the ratio of the first value to the second value is any value between 100% and 150%; wherein the number of third ligands connected to the quantum dot bodies is a third value, the sum of the third value and the number of first ligands connected to the quantum dot bodies is a fourth value, and the ratio of the third value to the fourth value is any value between 5% and 40%; wherein the number of third ligands connected to the hollow nanoparticles is a fifth value, the sum of the fifth value and the number of second ligands connected to the hollow nanoparticles is a sixth value, and the ratio of the fifth value to the sixth value is any value between 5% and 40%.

[0012] In order to solve the above technical problems, the second technical solution adopted in this application is to provide a quantum dot film patterning method, including: obtaining a quantum dot composition, which is the above-mentioned quantum dot composition; adding the quantum dot composition to a solvent to obtain a quantum dot solution; depositing the quantum dot solution on a substrate to form a quantum dot film; exposing the quantum dot film to cause a photocrosslinking reaction; wherein the photocrosslinking reaction includes a crosslinking reaction between the photosensitive group and the first ligand connected to the adjacent quantum dot body and / or the second ligand connected to the adjacent hollow nanoparticle; and developing the quantum dot film to form a preset pattern on the quantum dot film layer.

[0013] In order to solve the above technical problems, the third technical solution adopted in this application is to provide a quantum dot light-emitting device, including: a substrate, an anode, a hole transport layer, a light-emitting layer, an electron transport layer and a cathode stacked in sequence on the substrate, the light-emitting layer includes a quantum dot film layer, and the quantum dot film layer is made by the above-mentioned quantum dot thin film patterning method.

[0014] In order to solve the above technical problems, the fourth technical solution adopted in this application is to provide a display device including the above-mentioned quantum dot light-emitting device.

[0015] The beneficial effects of the present application are as follows: Different from the prior art, the present application provides a quantum dot composition, a quantum dot film patterning method and related devices and apparatuses, which, by adding hollow nanoparticles to the quantum dot body, and modifying a photosensitive group on a third ligand connected to the quantum dot body and / or the hollow nanoparticles, and configuring the photosensitive group to undergo a cross-linking reaction with a first ligand connected to an adjacent quantum dot body and / or a second ligand connected to an adjacent hollow nanoparticle, can utilize the cross-linking structure formed between the quantum dot body and the hollow nanoparticles to combine the quantum dot body and the hollow nanoparticles together, thereby improving the stability of the quantum dot film layer and the anti-development performance of the retained area, thereby achieving patterning of the quantum dot film layer. Furthermore, since the hollow nanoparticles have a high transmittance, they are connected to the quantum dot body, which can improve the transmittance of the quantum dot film layer, thereby reducing the energy and time required for photocuring, thereby reducing the probability of damage to the quantum dot body, and then improving the luminescence performance and display effect of the display device. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the example description. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0017] Figure 1 This is a schematic structural diagram of the first embodiment of the quantum dot composition of the present application;

[0018] Figure 2 This is a schematic structural diagram of the second embodiment of the quantum dot composition of the present application;

[0019] Figure 3 This is a schematic structural diagram of the third embodiment of the quantum dot composition of the present application;

[0020] Figure 4 This is a schematic structural diagram of the fourth embodiment of the quantum dot composition of the present application;

[0021] Figure 5 This is a schematic flow chart of an embodiment of the method for patterning a quantum dot thin film of the present application;

[0022] Figure 6 This is a schematic structural diagram of an embodiment of the quantum dot solution of the present application;

[0023] Figure 7 It is a structural schematic diagram of an embodiment of the quantum dot light-emitting device of the present application. DETAILED DESCRIPTION

[0024] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0025] The terms used in the examples of this application are for the purpose of describing specific embodiments only and are not intended to limit this application. The singular forms "a," "the," and "the" used in the examples of this application and the appended claims are also intended to include plural forms. Unless otherwise clearly indicated above, "a plurality" generally includes at least two, but does not exclude the inclusion of at least one.

[0026] It should be understood that the term "and / or" as used herein is merely a description of the relationship between associated objects, indicating that three possible relationships exist. For example, "A and / or B" can represent: A exists alone, A and B exist simultaneously, or B exists alone. Furthermore, the character " / " in this document generally indicates that the associated objects are in an "or" relationship.

[0027] It should be understood that the terms "comprises," "comprising," or any other variations used herein are intended to encompass non-exclusive inclusion, such that a process, method, article, or apparatus that includes a list of elements includes not only those elements but also other elements not explicitly listed, or elements inherent to such process, method, article, or apparatus. In the absence of further limitations, an element defined by the phrase "comprising..." does not preclude the presence of additional identical elements in the process, method, article, or apparatus that includes the element.

[0028] In one embodiment, the photosensitive groups modified on the surface of quantum dots undergo photolysis under ultraviolet light, forming crosslinks with other quantum dots. However, due to the poor transmittance of the quantum dots themselves, limited exposure energy or short exposure time can result in incomplete curing of the quantum dot material, which in turn affects the post-development image morphology. To fully cure the quantum dot material, increasing the exposure time and / or energy may be necessary, but this may damage the quantum dot structure, thereby affecting the luminescence performance and display quality of the display device.

[0029] Based on the above situation, the present application provides a quantum dot composition, a quantum dot film patterning method and related devices and apparatuses, which can solve the problem that a quantum dot film layer with high transmittance and good performance cannot be prepared under the above-mentioned implementation mode.

[0030] The quantum dot composition provided in this application includes: a quantum dot body; hollow nanoparticles, the transmittance of the hollow nanoparticles is greater than the transmittance of the quantum dot body; a first ligand connected to the quantum dot body; or, a second ligand connected to the hollow nanoparticles, the first ligand connected to the quantum dot body; a third ligand connected to the quantum dot body and / or the hollow nanoparticles, the third ligand including a photosensitive group; wherein the photosensitive group is configured to undergo a cross-linking reaction with the first ligand connected to the adjacent quantum dot body and / or the second ligand connected to the adjacent hollow nanoparticles. By adding hollow nanoparticles to the quantum dot body, and modifying the photosensitive group on the third ligand connected to the quantum dot body and / or the hollow nanoparticles, and configuring the photosensitive group to undergo a cross-linking reaction with the first ligand connected to the adjacent quantum dot body and / or the second ligand connected to the adjacent hollow nanoparticles, the quantum dot body and the hollow nanoparticles can be combined together by utilizing the cross-linking structure formed between the quantum dot body and the hollow nanoparticles, thereby improving the stability of the quantum dot film layer and the anti-development performance of the retained area, thereby achieving patterning of the quantum dot film layer. Furthermore, since the hollow nanoparticles have high light transmittance, they form a connection with the quantum dot body, which can increase the light transmittance of the quantum dot film layer, thereby reducing the energy and time required for photocuring, thereby reducing the probability of damage to the quantum dot body, and then improving the luminescence performance and display effect of the display device.

[0031] To illustrate the specific structure of the quantum dot composition of this application, please refer to Figure 1 , Figure 1 It is a structural schematic diagram of the first embodiment of the quantum dot composition of the present application.

[0032] In this embodiment, a quantum dot composition 100 includes a quantum dot body 10 and hollow nanoparticles 20. The light transmittance of the hollow nanoparticles 20 is greater than that of the quantum dot body 10. A first ligand 11 is attached to the quantum dot body 10, and a second ligand 21 is attached to the hollow nanoparticles 20. Both the quantum dot body 10 and the hollow nanoparticles 20 are attached to a third ligand 30. The third ligand 30 includes a photosensitive group.

[0033] In this embodiment, the photosensitive group in the third ligand 30 connected to the quantum dot body 10 is configured to undergo a cross-linking reaction with the second ligand 21 connected to the adjacent hollow nanoparticle 20, and the photosensitive group in the third ligand 30 connected to the hollow nanoparticle 20 is configured to undergo a cross-linking reaction with the first ligand 11 connected to the adjacent quantum dot body 10.

[0034] In this embodiment, the photosensitive group includes at least one of a benzophenone group, a benzophenone group, an azide group, a pure nitrogen group, a carbon-oxygen double bond group, a carbon-carbon double bond group, a carbon-nitrogen double bond group, and a double electron-donating group.

[0035] In this embodiment, the first ligand 11, the second ligand 21 and the third ligand 30 include at least one of a carboxyl group, an amino group and a thiol group, wherein the carboxyl group, the amino group and the thiol group are ligand groups that undergo cross-linking reaction with the photosensitive group.

[0036] In some specific embodiments, the first ligand 11 , the second ligand 21 , and the third ligand 30 may be oleic acid (OA) and oleylamine (OLA).

[0037] Among them, oleic acid is used to increase the solubility of quantum dot materials in solvents.

[0038] In some specific embodiments, the first ligand 11 or the second ligand 21 may be only oleic acid or oleylamine, or may include both oleic acid and oleylamine, or may be at least one other compound including carboxyl, amino and thiol groups, which is not limited in this application.

[0039] In this embodiment, the first ligand 11 , the second ligand 21 and the third ligand 30 further include an alkyl chain, and the present application does not limit the length of the alkyl chain.

[0040] In some embodiments, the end group of the alkyl chain in the first ligand 11 is connected to the quantum dot body 10 at one end, and the end group of the other end is connected to at least one of a carboxyl group, an amino group, and a thiol group. The end group of the alkyl chain in the second ligand 21 is connected to the hollow nanoparticle 20 at one end, and the end group of the other end is connected to at least one of a carboxyl group, an amino group, and a thiol group. The end group of the alkyl chain in the third ligand 30 is connected to the quantum dot body 10 or the hollow nanoparticle 20 at one end, and the end group of the other end is connected to the photosensitive group.

[0041] In this embodiment, under ultraviolet light irradiation, the photosensitive group in the third ligand 30 connected to the quantum dot body 10 undergoes a cross-linking reaction with the second ligand 21 connected to the adjacent hollow nanoparticle 20 to form a cross-linked structure. At the same time, the photosensitive group in the third ligand 30 connected to the hollow nanoparticle 20 undergoes a cross-linking reaction with the first ligand 11 connected to the adjacent quantum dot body 10 to form a cross-linked structure, which can change the solubility of the quantum dot material. After exposure, the quantum dot film is cleaned with a solvent that can dissolve the quantum dot material. The quantum dot material in the unirradiated area is dissolved and removed, while the quantum dot material forming the cross-linked structure in the irradiated area is not dissolved in the solvent, thereby retaining the pattern of the quantum dot film layer.

[0042] It can be understood that by connecting the third ligand 30 to the quantum dot body 10, and connecting the third ligand 30 to the hollow nanoparticle 20, and configuring the photosensitive group in the third ligand 30 connected to the quantum dot body 10 to undergo a cross-linking reaction with the second ligand 21 connected to the adjacent hollow nanoparticle 20, the photosensitive group in the third ligand 30 connected to the hollow nanoparticle 30 is configured to undergo a cross-linking reaction with the first ligand 11 connected to the adjacent quantum dot body 10, the cross-linking structure formed between the quantum dot body 10 and the hollow nanoparticle 20 can be utilized to combine the quantum dot body 10 and the hollow nanoparticle 20 together, thereby improving the stability of the quantum dot film layer and the anti-development performance of the retained area, thereby realizing patterning of the quantum dot film layer.

[0043] In this embodiment, the hollow nanoparticles 20 include at least one of hollow silica nanoparticles, hollow titanium dioxide nanoparticles, hollow zinc dioxide nanoparticles, and hollow aluminum oxide nanoparticles.

[0044] Specifically, due to the small size effect of the nanoparticles, the diffusion of atoms on the surface of the hollow nanoparticles 20 can be promoted, so that multiple scattering occurs when irradiated by ultraviolet light, thereby improving the light diffusion effect and transmittance.

[0045] As can be understood, since hollow nanoparticles 20 have high light transmittance, adding them to the quantum dot material and forming a connection with the quantum dot body 10 can improve the light transmittance of the quantum dot film layer and more completely cross-link the underlying quantum dots. Furthermore, the increased light transmittance of the film layer can reduce the energy and time required for photocuring, thereby reducing the probability of damage to the quantum dot body 10, and thus improving the luminescence performance and display effect of the display device.

[0046] In some embodiments, the number of quantum dot bodies 10 in the quantum dot composition 100 is a first value, the number of hollow nanoparticles 20 is a second value, and the ratio of the first value to the second value is any value between 100% and 150%.

[0047] In some embodiments, the ratio of the first value to the second value is 120%. In other embodiments, the ratio of the first value to the second value is 130%. In still other embodiments, the ratio of the first value to the second value is 140%.

[0048] It is understandable that the more hollow nanoparticles 20 are added, the greater the transmittance of the quantum dot film layer. However, considering the luminescence performance of the quantum dot film layer, the amount of hollow nanoparticles 20 needs to be limited.

[0049] In some embodiments, the number of third ligands 30 connected to the quantum dot body 10 is a third value, the sum of the third value and the number of first ligands connected to the quantum dot body 10 is a fourth value, and the ratio of the third value to the fourth value is any value between 5% and 40%.

[0050] In some embodiments, the ratio of the third value to the fourth value is 10%. In other embodiments, the ratio of the third value to the fourth value is 20%. In still other embodiments, the ratio of the third value to the fourth value is 30%.

[0051] In some embodiments, the number of the third ligands 30 connected to the hollow nanoparticles 20 is a fifth value, the sum of the fifth value and the number of the second ligands connected to the hollow nanoparticles 20 is a sixth value, and the ratio of the fifth value to the sixth value is any value between 5% and 40%.

[0052] In some embodiments, the ratio of the fifth value to the sixth value is 10%. In other embodiments, the ratio of the fifth value to the sixth value is 20%. In still other embodiments, the ratio of the fifth value to the sixth value is 30%.

[0053] It can be understood that the ratio of the third value to the fourth value is any value between 5% and 40%, and the ratio of the fifth value to the sixth value is any value between 5% and 40%, which can not only ensure the solubility of the quantum dot material and the hollow nanomaterial, but also maximize the photolysis performance of the quantum dot material.

[0054] See also Figure 2 , Figure 2 This is a schematic diagram of the structure of the second embodiment of the quantum dot composition of the present application. Quantum dot composition 200 includes a quantum dot body 10 and hollow nanoparticles 20. The light transmittance of the hollow nanoparticles 20 is greater than that of the quantum dot body 10. A first ligand 11 is attached to the quantum dot body 10, and a second ligand 21 is attached to the hollow nanoparticles 20.

[0055] Only the differences between this embodiment and the first embodiment will be described below.

[0056] In this embodiment, only the quantum dot body 10 is connected to the third ligand 30 . The photosensitive group in the third ligand 30 connected to the quantum dot body 10 is configured to undergo a cross-linking reaction with the second ligand 21 connected to the adjacent hollow nanoparticle 20 .

[0057] In this embodiment, under ultraviolet light irradiation, the photosensitive group in the third ligand 30 connected to the quantum dot body 10 undergoes a cross-linking reaction with the second ligand 21 connected to the adjacent hollow nanoparticles 20 to form a cross-linked structure, which can change the solubility of the quantum dot material. After exposure, the quantum dot film is cleaned with a solvent that can dissolve the quantum dot material. The quantum dot material in the unirradiated area is dissolved and removed, while the quantum dot material forming a cross-linked structure in the irradiated area is not dissolved in the solvent, thereby retaining the pattern of the quantum dot film layer.

[0058] See also Figure 3 , Figure 3 This is a schematic diagram of the structure of the third embodiment of the quantum dot composition of the present application. Quantum dot composition 300 includes a quantum dot body 10 and hollow nanoparticles 20. The light transmittance of the hollow nanoparticles 20 is greater than that of the quantum dot body 10. A first ligand 11 is attached to the quantum dot body 10, and a second ligand 21 is attached to the hollow nanoparticles 20.

[0059] Only the differences between this embodiment and the above-described embodiment will be described below.

[0060] In this embodiment, only the hollow nanoparticle 20 is connected to the third ligand 30 . The photosensitive group in the third ligand 30 connected to the hollow nanoparticle 20 is configured to undergo a cross-linking reaction with the first ligand 11 connected to the adjacent quantum dot body 10 .

[0061] In this embodiment, under ultraviolet light irradiation, the photosensitive group in the third ligand 30 connected to the hollow nanoparticle 20 undergoes a cross-linking reaction with the first ligand 11 connected to the adjacent quantum dot body 10 to form a cross-linked structure, which can change the solubility of the quantum dot material. After exposure, the quantum dot film is cleaned with a solvent that can dissolve the quantum dot material. The quantum dot material in the unirradiated area is dissolved and removed, while the quantum dot material forming a cross-linked structure in the irradiated area is not dissolved in the solvent, thereby retaining the pattern of the quantum dot film layer.

[0062] See also Figure 4 , Figure 4 This is a schematic diagram of the structure of the fourth embodiment of the quantum dot composition of the present application. Quantum dot composition 400 includes a quantum dot body 10 and hollow nanoparticles 20. The light transmittance of the hollow nanoparticles 20 is greater than that of the quantum dot body 10. A first ligand 11 is attached to the quantum dot body 10.

[0063] Only the differences between this embodiment and the above-described embodiment will be described below.

[0064] In this embodiment, only the third ligand 30 is connected to the hollow nanoparticle 20, and no second ligand 21 is connected to the hollow nanoparticle 20. The photosensitive group in the third ligand 30 connected to the hollow nanoparticle 20 is configured to undergo a cross-linking reaction with the first ligand 11 connected to the adjacent quantum dot body 10.

[0065] It can be understood that the quantum dot body 10 must be connected to the first ligand 11 to prevent the quantum dot body 10 from quenching, but when the hollow nanoparticle 20 is connected to the third ligand 30, since the third ligand 30 can also meet the solubility requirements of the hollow nanomaterial, the hollow nanoparticle does not need to be connected to the second ligand 21.

[0066] Different from other embodiments, the present application adds hollow nanoparticles to the quantum dot body, modifies the third ligand connected to the quantum dot body and / or the hollow nanoparticles with a photosensitive group, and configures the photosensitive group to undergo a cross-linking reaction with the first ligand connected to the adjacent quantum dot body and / or the second ligand connected to the adjacent hollow nanoparticle. The cross-linking structure formed between the quantum dot body and the hollow nanoparticles can be used to combine the quantum dot body and the hollow nanoparticles together, thereby improving the stability of the quantum dot film layer and the anti-development performance of the retained area, thereby achieving patterning of the quantum dot film layer. Furthermore, since the hollow nanoparticles have high light transmittance, they are connected to the quantum dot body, which can improve the light transmittance of the quantum dot film layer, thereby reducing the energy and time required for photocuring, thereby reducing the probability of damage to the quantum dot body, and then improving the luminescence performance and display effect of the display device.

[0067] Correspondingly, the present application provides a method for patterning a quantum dot thin film.

[0068] Specifically, see Figure 5 , Figure 5 : is a schematic flow chart of an embodiment of a method for patterning a quantum dot thin film of the present application. In this embodiment, the method for patterning a quantum dot thin film includes:

[0069] S11: Obtain a quantum dot composition, which is the aforementioned quantum dot composition.

[0070] In some embodiments, the quantum dot body can be a core-shell quantum dot with Cd (cadmium) Se (selenium) as the core, such as CdS (cadmium sulfide), CdSe (cadmium selenide), CdTe (cadmium telluride), etc. In other embodiments, the quantum dot body can be an indium-based quantum dot, such as CuInS2 (copper indium sulfide), InP (indium phosphide), etc. In some other embodiments, the quantum dot body can be a doped quantum dot doped with rare earth ions or metal ions, such as doping Cu (copper), Ag (silver), Mn (manganese), etc. in CdS or CdTe, which is not limited in this application. In other embodiments, the quantum dot body can also be a perovskite quantum dot, which is not limited in this application.

[0071] In this embodiment, the method for preparing a quantum dot composition includes: obtaining a quantum dot precursor, the quantum dot precursor including a first ligand; mixing the quantum dot precursor with a third ligand carrying a photosensitive group, and replacing a portion of the first ligand with the third ligand through ligand exchange to obtain the aforementioned quantum dot body; obtaining a hollow nanomaterial, mixing the hollow nanomaterial with a second ligand, connecting the second ligand to the hollow nanomaterial through hot injection, adding a third ligand carrying a photosensitive group, and replacing a portion of the second ligand with the third ligand through ligand exchange to obtain the aforementioned hollow nanoparticles; adding the quantum dot body and the hollow nanoparticles to a solvent in a preset ratio so that the quantum dot body and the hollow nanoparticles are evenly mixed. The preset ratio refers to the number of quantum dot bodies being a first value, the number of hollow nanoparticles being a second value, and the ratio of the first value to the second value being any value between 100% and 150%. The solvent is dried by coating to obtain the quantum dot composition.

[0072] Taking InP as an example, the following chemical reactions occur during the preparation of quantum dot precursors:

[0073]

[0074]

[0075] InP / ZnS+S-TOP+Zn(OA)2→InP / ZnS / ZnS (3)

[0076] Among them, chemical reaction formula (1) is used to prepare InP core, chemical reaction formula (2) is used to synthesize ZnS shell, and chemical reaction formula (3) is used to prepare the outermost ZnS shell; ZnI2 is zinc iodide, InI3 is indium iodide, OLA is oleylamine, -H2O / O2 is dehydration and deoxygenation, Δ is heating, (DMA)3P is tris(trimethylamino)phosphine, DDT is dichlorophenyltrichloroethane, ZnS is zinc sulfide, S-TOP is sulfur coordination solvent, and Zn(OA)2 is zinc acetate.

[0077] In this embodiment, the quantum dot body includes quantum dots of predetermined colors, namely, red (R) quantum dots, green (G) quantum dots, and blue (B) quantum dots.

[0078] In this embodiment, the hollow nanoparticles are at least one of hollow silica nanoparticles, hollow titanium dioxide (TiO2) nanoparticles, hollow zinc dioxide (ZnO) nanoparticles, and hollow alumina (Al2O3), which is not limited in this application.

[0079] In this embodiment, the photosensitive group includes at least one of a benzophenone group, a benzophenone group, an azide group, a pure nitrogen group, a carbon-oxygen double bond group, a carbon-carbon double bond group, a carbon-nitrogen double bond group, and a double electron-donating group.

[0080] In this embodiment, the first ligand, the second ligand, and the third ligand include at least one of a carboxyl group, an amino group, and a thiol group, wherein the carboxyl group, the amino group, and the thiol group are ligand groups that undergo cross-linking reactions with the photosensitive group.

[0081] In some specific embodiments, the first ligand 11 , the second ligand 21 , and the third ligand 30 may be oleic acid (OA) and oleylamine (OLA).

[0082] In other embodiments, the groups included in the first ligand and the second ligand may also be other ligand groups that undergo cross-linking reactions with the photosensitive group, which is not limited in this application.

[0083] S12: adding the quantum dot composition to a solvent to obtain a quantum dot solution.

[0084] In this embodiment, a quantum dot solution is prepared using a quantum dot composition and a solvent.

[0085] Wherein, the solvent may be n-octane toluene.

[0086] In some embodiments, the quantum dot solution may only include a quantum dot compound in which the third ligand is connected to the quantum dot body and the third ligand is connected to the hollow nanoparticles, or may only include a quantum dot compound in which the third ligand is connected to the quantum dot body, or may only include a quantum dot compound in which the third ligand is connected to the hollow nanoparticles.

[0087] In other embodiments, the quantum dot solution may include any two, three, or four of the above-mentioned types of quantum dot compounds, which is not limited in this application.

[0088] Specifically, see Figure 6 , Figure 6FIG. 5 is a schematic diagram of the structure of an embodiment of the quantum dot solution of the present application. In this embodiment, the quantum dot solution 500 includes the above four types of quantum dot compounds, and the four types of quantum dot compounds are uniformly mixed in the solvent 50 .

[0089] S13: depositing a quantum dot solution on a substrate to form a quantum dot film.

[0090] S14: exposing the quantum dot film to light to cause a photo-crosslinking reaction; wherein the photo-crosslinking reaction includes a photosensitive group and a first ligand connected to an adjacent quantum dot body and / or a second ligand connected to an adjacent hollow nanoparticle to undergo a crosslinking reaction.

[0091] In this embodiment, after using a mask to block the quantum dot film, ultraviolet light is used to irradiate the corresponding area of ​​the quantum dot film, so that the photosensitive groups in the quantum dot material in the corresponding area and the first ligand connected to the adjacent quantum dot body and / or the second ligand connected to the adjacent hollow nanoparticles undergo photolysis to generate a cross-linked structure.

[0092] S15: developing the quantum dot film to form a preset pattern on the quantum dot film layer.

[0093] In this embodiment, a solvent that can dissolve quantum dot materials is used to clean the quantum dot film. The quantum dot materials in the unirradiated area are dissolved and removed, while the quantum dot materials forming a cross-linked structure in the irradiated area are not dissolved in the solvent, thereby retaining the pattern of the quantum dot film layer.

[0094] Different from other embodiments, this embodiment adds hollow nanoparticles to the quantum dot body, modifies the third ligand connected to the quantum dot body and / or the hollow nanoparticles with a photosensitive group, and configures the photosensitive group to undergo a cross-linking reaction with the first ligand connected to the adjacent quantum dot body and / or the second ligand connected to the adjacent hollow nanoparticle. The cross-linking structure formed between the quantum dot body and the hollow nanoparticles can be used to combine the quantum dot body and the hollow nanoparticles together, thereby improving the stability of the quantum dot film layer and the anti-development performance of the retained area, thereby achieving patterning of the quantum dot film layer. Furthermore, since the hollow nanoparticles have high light transmittance, they are connected to the quantum dot body, which can improve the light transmittance of the quantum dot film layer, thereby reducing the energy and time required for photocuring, thereby reducing the probability of damage to the quantum dot body, and then improving the luminescence performance and display effect of the display device.

[0095] Correspondingly, the present application provides a quantum dot light-emitting device.

[0096] Specifically, see Figure 7 , Figure 7 It is a structural schematic diagram of an embodiment of the quantum dot light-emitting device of the present application.

[0097] In this embodiment, a quantum dot light-emitting device 600 includes a substrate 61, an anode 62, a hole transport layer 63, a light-emitting layer 64, an electron transport layer 65, and a cathode 66, which are sequentially stacked on the substrate 61. The light-emitting layer 64 includes a quantum dot film layer, which is produced by the aforementioned quantum dot thin film patterning method.

[0098] Correspondingly, the present application provides a display device comprising the above-mentioned quantum dot light-emitting device.

[0099] Different from other embodiments, the present application adds hollow nanoparticles to the quantum dot body, modifies the third ligand connected to the quantum dot body and / or the hollow nanoparticles with a photosensitive group, and configures the photosensitive group to undergo a cross-linking reaction with the first ligand connected to the adjacent quantum dot body and / or the second ligand connected to the adjacent hollow nanoparticle. The cross-linking structure formed between the quantum dot body and the hollow nanoparticles can be used to combine the quantum dot body and the hollow nanoparticles together, thereby improving the stability of the quantum dot film layer and the anti-development performance of the retained area, thereby achieving patterning of the quantum dot film layer. Furthermore, since the hollow nanoparticles have high light transmittance, they are connected to the quantum dot body, which can improve the light transmittance of the quantum dot film layer, thereby reducing the energy and time required for photocuring, thereby reducing the probability of damage to the quantum dot body, and then improving the luminescence performance and display effect of the display device.

[0100] The above description is only an implementation method of the present application and does not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the description and drawings of this application, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A quantum dot composition, characterized in that include: Quantum dot body; Hollow nanoparticles, wherein the light transmittance of the hollow nanoparticles is greater than the light transmittance of the quantum dot body; A first ligand is connected to the quantum dot body; or a second ligand is connected to the hollow nanoparticle, and the first ligand is connected to the quantum dot body; A third ligand connected to the quantum dot body and / or the hollow nanoparticle, wherein the third ligand includes a photosensitive group; Wherein, the photosensitive group is configured to undergo a cross-linking reaction with the first ligand connected to the adjacent quantum dot body and / or the second ligand connected to the adjacent hollow nanoparticle.

2. The quantum dot composition according to claim 1, characterized in that The hollow nanoparticles include at least one of hollow silica nanoparticles, hollow titanium dioxide nanoparticles, hollow zinc dioxide nanoparticles and hollow aluminum oxide nanoparticles.

3. The quantum dot composition according to claim 1, characterized in that The quantum dot body and the hollow nanoparticles are both connected with a third ligand; Preferably, the photosensitive group in the third ligand connected to the quantum dot body is configured to undergo a cross-linking reaction with the second ligand connected to the adjacent hollow nanoparticle, and the photosensitive group in the third ligand connected to the hollow nanoparticle is configured to undergo a cross-linking reaction with the first ligand connected to the adjacent quantum dot body.

4. The quantum dot composition according to claim 1, characterized in that Only the quantum dot body is connected to the third ligand; Preferably, the photosensitive group in the third ligand connected to the quantum dot body is configured to undergo a cross-linking reaction with the second ligand connected to the adjacent hollow nanoparticle.

5. The quantum dot composition according to claim 1, characterized in that Only the hollow nanoparticles are connected to the third ligand; Preferably, the photosensitive group in the third ligand connected to the hollow nanoparticle is configured to undergo a cross-linking reaction with the first ligand connected to the adjacent quantum dot body.

6. The quantum dot composition according to claim 1, characterized in that The photosensitive group includes at least one of a benzophenone group, a benzophenone group, an azide group, a pure nitrogen group, a carbon-oxygen double bond group, a carbon-carbon double bond group, a carbon-nitrogen double bond group, and a double electron-pushing group; Preferably, the first ligand, the second ligand and the third ligand include at least one of a carboxyl group, an amino group and a thiol group.

7. The quantum dot composition according to claim 1, characterized in that The number of the quantum dot bodies in the quantum dot composition is a first value, the number of the hollow nanoparticles is a second value, and the ratio of the first value to the second value is any value between 100% and 150%; Preferably, the number of the third ligands connected to the quantum dot body is a third value, the sum of the third value and the number of the first ligands connected to the quantum dot body is a fourth value, and the ratio of the third value to the fourth value is any value between 5% and 40%; Preferably, the number of the third ligands connected to the hollow nanoparticles is a fifth value, the sum of the fifth value and the number of the second ligands connected to the hollow nanoparticles is a sixth value, and the ratio of the fifth value to the sixth value is any value between 5% and 40%.

8. A method for patterning a quantum dot thin film, characterized in that: include: Obtaining a quantum dot composition, wherein the quantum dot composition is the quantum dot composition according to any one of claims 1 to 7; adding the quantum dot composition to a solvent to obtain a quantum dot solution; coating the quantum dot solution on a substrate to form a quantum dot film; Exposing the quantum dot film to light to cause a photocrosslinking reaction; wherein the photocrosslinking reaction includes a crosslinking reaction between the photosensitive group and the first ligand connected to the adjacent quantum dot body and / or the second ligand connected to the adjacent hollow nanoparticle; The quantum dot film is developed to form a preset pattern on the quantum dot film layer.

9. A quantum dot light-emitting device, characterized in that: include: A substrate, an anode, a hole transport layer, a light-emitting layer, an electron transport layer and a cathode stacked in sequence on the substrate, wherein the light-emitting layer includes a quantum dot film layer, and the quantum dot film layer is made by the quantum dot thin film patterning method according to claim 8.

10. A display device, characterized in that: The device comprises a quantum dot light emitting device as claimed in claim 9.

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