Multi-system access platform and heterodyne combiner

Abstract

The application provides a multi-system access platform and a heterodyne combiner. The heterodyne combiner comprises a first substrate waveguide resonant cavity, at least two input feed lines for introducing excitation signals of different sources, a second substrate waveguide resonant cavity stacked on the first substrate waveguide resonant cavity, an output feed line of the second substrate waveguide resonant cavity, and a common cavity wall of the first substrate waveguide resonant cavity and the second substrate waveguide resonant cavity. At least two coupling holes are arranged on the common cavity wall and communicate the first substrate waveguide resonant cavity and the second substrate waveguide resonant cavity, so that the excitation signals input by the at least two input feed lines are transmitted to the second substrate waveguide resonant cavity and then output to an external antenna radiation end through the output feed line. The heterodyne combiner has good isolation for multi-band signals, good frequency expansion, and high design flexibility.

Description

Technical Field

[0001] This application relates to communication antenna technology, and more particularly to a frequency combiner and a multi-system access platform. Background Technology

[0002] Point of Interface (POI) platforms play a crucial role in modern communication infrastructure. The core function of a POI is to efficiently combine and distribute signals from different frequency bands using a frequency combiner, avoiding interference between multiple systems while ensuring high-quality signal transmission.

[0003] However, in current multi-system access platforms, microstrip line combiners or cavity combiners are used for frequency combining. When combining multiple frequency bands, microstrip line combiners are prone to reduced isolation due to parasitic coupling, which affects the performance. Cavity combiners have poor adaptability to multi-frequency band expansion. Adding new frequency bands requires redesigning the cavity, which is costly and has a long production cycle. Summary of the Invention

[0004] This application provides a frequency combiner and a multi-system access platform to solve the technical problem of low isolation when combining multiple frequency bands in multi-system access platforms in related technologies.

[0005] On the one hand, this application provides a frequency combiner, comprising:

[0006] The first substrate waveguide resonant cavity has at least two input feed terminals, which are used to introduce excitation signals from different sources, and the positions of the at least two input feed terminals are configured to correspond to different electromagnetic field resonance modes of the first substrate waveguide resonant cavity.

[0007] A second substrate waveguide resonant cavity is stacked on the first substrate waveguide resonant cavity. The second substrate waveguide resonant cavity has an output feed line terminal, and the second substrate waveguide resonant cavity and the first substrate waveguide resonant cavity share a common cavity wall.

[0008] The common cavity wall is provided with at least two through coupling openings, which connect the first substrate waveguide resonant cavity and the second substrate waveguide resonant cavity, so that the excitation signals input from at least two input feed terminals are transmitted to the second substrate waveguide resonant cavity and output to the external antenna radiating terminal after being combined through the output feed terminal.

[0009] In some possible implementations, a first waveguide assembly, an intermediate metal layer, and a second waveguide assembly are stacked sequentially. The first waveguide assembly and the intermediate metal layer together constitute the first substrate waveguide resonant cavity, and the second waveguide assembly and the intermediate metal layer together constitute the second substrate waveguide resonant cavity. The intermediate metal layer forms the common cavity wall.

[0010] In some possible implementations, the first waveguide assembly includes a first metal layer and a first dielectric layer stacked sequentially, and the second waveguide assembly includes a second metal layer and a second dielectric layer stacked sequentially, with an intermediate metal layer located between the first dielectric layer and the second dielectric layer;

[0011] Both the first dielectric layer and the second dielectric layer are provided with a plurality of metal vias, which are arranged in a ring array. At least two input feed terminals are provided on the first metal layer, and the output feed terminals are provided on the second metal layer.

[0012] In some possible implementations, of the at least two input feed terminals, one input feed terminal is located at the wave node of the first metal layer in the first preset mode and at the antinode of the first substrate waveguide resonator in the second preset mode; the other input feed terminal is located at the wave node of the first substrate waveguide resonator in the second preset mode and at the antinode of the first substrate waveguide resonator in the first preset mode.

[0013] The first preset mode and the second preset mode are mutually orthogonal electromagnetic field resonance modes.

[0014] In some possible implementations, two first disturbance grooves are spaced apart on the first metal layer, and the two first disturbance grooves extend in the same direction; two second disturbance grooves are spaced apart on the second metal layer, and the orthographic projection of the two second disturbance grooves on the first metal layer coincides with the first disturbance grooves.

[0015] The first disturbance slot and the second disturbance slot are configured to adjust the resonant frequency of the excitation signal in the first substrate waveguide resonant cavity and the second substrate waveguide resonant cavity.

[0016] In some possible implementations, two first disturbance vias are spaced apart on the first dielectric layer, and two second disturbance vias are spaced apart on the second dielectric layer. The line connecting the orthographic projections of the first disturbance vias and the second disturbance vias onto the first metal layer coincides with the axis of the first disturbance groove.

[0017] The first and second perturbation vias are configured to adjust the resonant frequencies of the excitation signal in the first and second substrate waveguide resonant cavities.

[0018] In some possible implementations, the lengths of the two first perturbation slots are negatively correlated with the resonant frequency, and / or the lengths of the two second perturbation slots are negatively correlated with the resonant frequency;

[0019] The spacing between the two first perturbation vias is positively correlated with the resonant frequency, and / or the spacing between the two second perturbation vias is positively correlated with the resonant frequency.

[0020] In some possible implementations, the orthographic projection of the coupling aperture onto the first metal layer at least partially coincides with the input feed terminal.

[0021] In some possible implementations, the first substrate waveguide resonant cavity and the second substrate waveguide resonant cavity are rectangular cavities, and the coupling aperture has four around the perimeter of the shared cavity wall.

[0022] On the other hand, this application provides a multi-system access platform, including:

[0023] At least two antenna radiating ends;

[0024] At least two frequency combiners as described in any one of the above claims, each of the frequency combiners having an output feed terminal;

[0025] The bridge has one end connected to at least two of the output feed terminals and the other end connected to at least two of the antenna radiating terminals, so that the antenna radiating terminals and the frequency combiner are connected in a one-to-one correspondence.

[0026] The frequency combiner and multi-system access platform provided in this application utilize a stacked arrangement of a first substrate waveguide resonant cavity and a second substrate waveguide resonant cavity in the frequency combiner. A coupling opening is provided on the common cavity wall to connect the first substrate waveguide resonant cavity and the second substrate waveguide resonant cavity. This avoids the parasitic radiation loss caused by using connecting feeders or independent cavities to connect the two resonant cavities in traditional technologies, effectively reducing the occupied size and making the overall structure more compact.

[0027] Furthermore, since at least two of the input feed terminals in the first substrate waveguide resonant cavity are used to introduce excitation signals from different sources, and the excitation signals in the first substrate waveguide resonant cavity have different excitation modes, the excitation signals of different excitation modes are orthogonally distributed in space, which can form good physical isolation in the first substrate waveguide resonant cavity, eliminating the need to design additional isolation circuits and effectively reducing the crosstalk ratio between signals. Attached Figure Description

[0028] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this application and, together with the description, serve to explain the principles of this application.

[0029] Figure 1 This is an exploded view of the frequency combiner in the embodiments of this application;

[0030] Figure 2 This is a schematic diagram of the structure of the multi-system access platform in this application embodiment;

[0031] Figure 3 TE in the embodiments of this application 201 Electric field distribution diagram of the first substrate waveguide resonant cavity in the mode;

[0032] Figure 4 TE in the embodiments of this application 102 Electric field distribution diagram of the first substrate waveguide resonant cavity in the mode;

[0033] Figure 5 This is a performance diagram of one of the frequency combiners of the multi-system access platform in this application embodiment;

[0034] Figure 6 This is a performance diagram of another frequency combiner in the multi-system access platform of this application embodiment.

[0035] Explanation of reference numerals in the attached figures

[0036] 100, First substrate waveguide resonant cavity; 110, First waveguide assembly; 111, First metal layer; 1111, First disturbance groove; 1112, Input feed end; 112, First dielectric layer; 1121, First disturbance via;

[0037] 200, Second substrate waveguide resonant cavity; 210, Second waveguide assembly; 211, Second metal layer; 2111, Second disturbance groove; 2112, Output feed end; 212, Second dielectric layer; 2121, Second disturbance via; 2122, Metal via array;

[0038] 300, Intermediate metal layer; 310, Coupling aperture;

[0039] 400, antenna radiating end; 500, bridge.

[0040] The accompanying drawings illustrate specific embodiments of this application, which will be described in more detail below. These drawings and descriptions are not intended to limit the scope of the concept in any way, but rather to illustrate the concept of this application to those skilled in the art through reference to particular embodiments. Detailed Implementation

[0041] To make the objectives, technical solutions, and advantages of this application clearer, the technical solutions in the embodiments of this application will be described in more detail below with reference to the accompanying drawings. In the drawings, the same or similar reference numerals denote the same or similar components or components having the same or similar functions throughout. The described embodiments are some, but not all, embodiments of this application. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain this application, and should not be construed as limiting this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application. The embodiments of this application will be described in detail below with reference to the accompanying drawings.

[0042] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, an indirect connection through an intermediate medium, or the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0043] In the description of this application, it should be understood that the terms "upper", "lower", "front", "rear", "left", "right", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0044] The terms "first," "second," "third," "fourth," etc., used in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of this application described herein can be implemented, for example, in a sequence other than those illustrated or described herein.

[0045] Furthermore, the terms “comprising” and “having”, and any variations thereof, are intended to cover non-exclusive inclusion, such that a process, method, system, product, or apparatus that includes a series of steps or units is not necessarily limited to those steps or units that are explicitly listed, but may include other steps or units that are not explicitly listed or that are inherent to such process, method, product, or apparatus.

[0046] As mentioned in the background section, multi-system access platforms are widely used in complex scenarios such as subways, airports, and stadiums, requiring simultaneous support for the access and combining of multiple signal standards, including 2G / 3G / 4G / 5G, WiFi, and private network communication. The core function of a multi-system access platform is to efficiently combine and distribute signals from different frequency bands using a frequency combiner, avoiding interference between multiple systems while ensuring high-quality signal transmission.

[0047] Existing cross-frequency combiners generally employ traditional cavity combiners or microstrip line combiners. Traditional cavity combiners are based on a metal cavity filter structure, offering high Q values ​​and low insertion loss, but they are bulky and heavy. Furthermore, the cavity structure has poor adaptability to multi-band expansion; adding new frequency bands requires redesigning the cavity, leading to high costs and long development cycles. Microstrip line combiners use a planar circuit design, resulting in smaller size and easier fabrication, but they have lower Q values ​​and weaker insertion loss and out-of-band rejection performance. Especially at high frequencies, the radiation loss of microstrip lines increases significantly, making it difficult to meet the requirements of high-frequency systems such as 5G. In addition, microstrip line combiners are prone to decreased isolation due to parasitic coupling in multi-band combining scenarios.

[0048] Based on the above description, one or more embodiments of this application provide a frequency combiner and a multi-system access platform. In the frequency combiner, a first substrate waveguide resonant cavity and a second substrate waveguide resonant cavity are stacked and arranged. A coupling opening is provided on the common cavity wall to connect the first substrate waveguide resonant cavity and the second substrate waveguide resonant cavity. This avoids the parasitic radiation loss caused by connecting feeders or independent cavities to connect the two resonant cavities in the traditional technology, effectively reduces the occupied size, and makes the overall structure more compact.

[0049] Furthermore, since at least two input feed terminals in the first substrate waveguide resonant cavity are used to introduce excitation signals from different sources, the excitation signals of different excitation modes are orthogonally distributed in space, and the excitation signals form good physical isolation in the first substrate waveguide resonant cavity, eliminating the need to design additional isolation circuits and effectively reducing the crosstalk ratio between signals.

[0050] To make the objectives, technical solutions, and advantages of this application clearer, the technical solutions in the embodiments of this application will be described in more detail below with reference to the accompanying drawings. In the drawings, the same or similar reference numerals denote the same or similar components or components having the same or similar functions throughout. The described embodiments are some, but not all, of the embodiments of this application. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain this application, and should not be construed as limiting this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0051] like Figure 1 As shown, the frequency combiner in this application embodiment includes a first substrate waveguide resonant cavity 100 and a second substrate waveguide resonant cavity 200 stacked together.

[0052] The first substrate waveguide resonant cavity 100 has at least two input feed terminals 1112, which are used to introduce excitation signals from different sources. The positions of the at least two input feed terminals 1112 are configured to correspond to different electromagnetic field resonance modes of the first substrate waveguide resonant cavity 100. The excitation signals input to the at least two input feed terminals 1112 have different excitation modes in the first substrate waveguide resonant cavity 100. The second substrate waveguide resonant cavity 200 is stacked on the first substrate waveguide resonant cavity 100. The second substrate waveguide resonant cavity 200 has an output feed terminal 2112. The second substrate waveguide resonant cavity 200 and the first substrate waveguide resonant cavity 100 share a common cavity wall.

[0053] The common cavity wall is provided with at least two through coupling openings 310, which connect the first substrate waveguide resonant cavity 100 and the second substrate waveguide resonant cavity 200, so that the excitation signals input by at least two input feed terminals 1112 are transmitted to the second substrate waveguide resonant cavity 200, and output to the external antenna radiating terminal 400 after being combined through the output feed terminal 2112.

[0054] As can be seen from the above description, the frequency combiner of this application utilizes the closed-field characteristics of a substrate integrated waveguide (SIW). Signals of different frequency bands are excited to generate different electromagnetic modes within the same first substrate waveguide resonant cavity 100 through different input feed terminals 1112. The different excitation modes are orthogonally distributed in space, naturally possessing isolation. Furthermore, the transmission of excitation signals of different high-frequency bands in different excitation modes within the same closed cavity avoids the near-field parasitic coupling problem that is easily caused by the open field distribution of traditional microstrip line structures, thus achieving a high isolation design.

[0055] Furthermore, in the first substrate waveguide resonant cavity 100, by adding the input feed terminal 1112 and different excitation modes, a new frequency band excitation signal can be added without expanding the physical size of the cavity or redesigning the overall structure. Therefore, it also has good frequency scalability and high design flexibility.

[0056] In some embodiments, the frequency combiner includes a first waveguide assembly 110, an intermediate metal layer 300, and a second waveguide assembly 210 stacked sequentially. The first waveguide assembly 110 and the intermediate metal layer 300 together constitute a first substrate waveguide resonant cavity 100, and the second waveguide assembly 210 and the intermediate metal layer 300 together constitute a second substrate waveguide resonant cavity 200. The intermediate metal layer 300 is a shared cavity wall of the first substrate waveguide resonant cavity 100 and the second substrate waveguide resonant cavity 200.

[0057] Thus, the intermediate metal layer 300 actually serves as the shared cavity wall of the first waveguide assembly and the second waveguide assembly 210. On the one hand, it can block near-field electromagnetic leakage between the two substrate waveguide resonant cavities, allowing only controllable electromagnetic coupling at the coupling opening 310. On the other hand, the intermediate metal layer 300 helps maintain the orthogonality of the field distribution of different excitation modes within the first substrate waveguide resonant cavity 100, enhancing the isolation of different excitation signals.

[0058] Specifically, the first waveguide assembly 110 includes a first metal layer 111 and a first dielectric layer 112 stacked sequentially, and the second waveguide assembly 210 includes a second metal layer 211 and a second dielectric layer 212 stacked sequentially, with an intermediate metal layer 300 located between the first dielectric layer 112 and the second dielectric layer 212; both the first dielectric layer 112 and the second dielectric layer 212 are provided with annular metal via arrays 2122, the first metal layer 111 is provided with at least two input feed terminals 1112, and the second metal layer 211 is provided with an output feed terminal 2112.

[0059] In the above embodiments, the first metal layer 111 and the first dielectric layer 112 are stacked sequentially upward along the height direction. The first metal layer 111, the first dielectric layer 112, the metal via array 2122 on the first metal layer 111 and the intermediate metal layer 300 together constitute the first substrate waveguide resonant cavity 100. The second metal layer 211, the second dielectric layer 212, the metal via array 2122 on the second metal layer 211 and the intermediate metal layer 300 together constitute the second substrate waveguide resonant cavity 200. The first substrate waveguide resonant cavity 100 and the second substrate waveguide resonant cavity 200 are coupled to each other through the coupling opening 310 of the intermediate metal layer 300, thereby realizing the transmission of excitation signal energy from the lower layer to the upper layer resonant cavity.

[0060] It should be noted that, in this embodiment, the metal via array 2122 on the first metal layer 111 and the second metal layer 211 is used to construct the closed boundary of the substrate waveguide resonant cavity. The spacing and diameter of the metal via array 2122 need to be flexibly designed according to the actual application scenario. The specific design method can refer to the structure of the metal via array 2122 in the substrate waveguide resonant cavity in the related technology. This will not be repeated in this embodiment.

[0061] Here, the core function of the frequency combiner is realized by a multi-layer planar substrate rather than a whole metal machined cavity. Therefore, on the first metal layer 111 corresponding to the first substrate waveguide resonant cavity 100, by increasing the number of input feed terminals 1112 and different excitation modes, the excitation signal of the new frequency band can be increased without expanding the physical size of the cavity or redesigning the overall structure, which reduces the design difficulty and is also conducive to improving production efficiency.

[0062] In addition, for the excitation signal of the newly added frequency band, the position, shape and size of the corresponding coupling aperture 310 are designed on the intermediate metal layer 300. As long as it can match the excitation mode, the coupling aperture 310 can be realized by planar processes such as photolithography and laser drilling, which reduces complex machining procedures, makes the design more flexible, and helps to reduce the design difficulty and production cost cycle of the new frequency band.

[0063] like Figure 1 As shown in the embodiments of this application, the first dielectric layer 112 and the second dielectric layer 212 can be made of the same material. For example, both the first dielectric layer 112 and the second dielectric layer 212 use Rogers RO4003C high-frequency boards, Rogers RO5880 high-frequency boards, or Rogers RO4350B high-frequency boards. However, for different dielectric materials, the relevant parameters of the device structure (including the via spacing of the metal via array 2122, the size of the coupling aperture 310, the impedance matching of the input feed terminal 1112, etc.) need to be readjusted to meet the operating frequency band and bandwidth requirements required in actual application scenarios. Here, the adjustment of these parameters can be designed with reference to the requirements of operating frequency band and bandwidth in related technologies.

[0064] In the above embodiments, the input feed terminal 1112 and the output feed terminal 2112 have the same structure, both adopting a microstrip line-coplanar waveguide (CPW) transition feed port structure. This structure is simple, easy to fabricate, and easy to integrate with other planar circuits. In this embodiment, when the linewidth of the fixed microstrip line of the input feed terminal 1112 and the output feed terminal 2112 is 1.58mm, the impedance matching of the input feed terminal 1112 and the output feed terminal 2112 is 50Ω, which can reduce the reflection of the transmitted signal.

[0065] Taking a setup with two input feeder terminals 1112 as an example, Figure 1 The input feed terminal 1112 includes a first coupling slot disposed on the first metal layer 111 and a first microstrip line connected to the first coupling slot. The first microstrip line achieves impedance matching between the input feed terminal 1112 and the first substrate waveguide resonant cavity 100 by adjusting the slot depth and slot width of the first coupling slot and the line width of the first microstrip line in the direction of the central axis of the first coupling slot.

[0066] Similarly, Figure 1In the design, the output feed terminal 2112 includes a second coupling slot disposed on the second metal layer 211 and a second microstrip line connected to the second coupling slot. The second microstrip line is positioned along the central axis of the second coupling slot. Impedance matching between the output feed terminal 2112 and the second substrate waveguide resonant cavity 200 is achieved by adjusting the slot depth and width of the second coupling slot and the linewidth of the second microstrip line. By adjusting the structural parameters of the input feed terminal 1112 and the output feed terminal 2112, good energy transmission and weak energy reflection effects are obtained.

[0067] like Figure 3 and Figure 4 As shown, of the at least two input feed terminals 1112, one input feed terminal 1112 is located at the wave node of the first metal layer 111 in the first preset mode and at the antinode of the first substrate waveguide resonant cavity 100 in the second preset mode; the other input feed terminal 1112 is located at the wave node of the first substrate waveguide resonant cavity 100 in the second preset mode and at the antinode of the first substrate waveguide resonant cavity 100 in the first preset mode.

[0068] The first preset mode and the second preset mode are orthogonal electromagnetic field resonance modes.

[0069] In the above embodiments, the electromagnetic field in the rectangular SIW resonant cavity exhibits a standing wave distribution, and the first preset mode is TE. 201 The second preset mode is TE. 102 model.

[0070] In TE mode, the electric field within the first substrate waveguide resonant cavity 100 has fixed antinodes and nodes, with TE... 201 Taking this model as an example, the electric field has two half-wave periods in the first direction and remains unchanged in the second direction. Its electric field zero point is located at the centerline of the second direction. TE 102 In this mode, the electric field has two half-wave periods in the second direction and remains unchanged in the first direction, with the zero point located at the center line of the first direction. The first and second directions are perpendicular to each other.

[0071] Therefore, one of its input feeder terminals 1112 is located in TE 102 At the zero-point position of the electric field of the mode, for TE 102 The mode has almost no excitation; the other input feeder terminal 1112 is located at TE. 201 At the zero-point position of the electric field of the mode, for TE 201 The mode has almost no excitation. This design ensures independent power transmission in both modes, effectively enhances the port isolation of the two input feeders 1112, solves the signal crosstalk problem of multi-port combiners, and can be widely used in various scenarios such as 5G multi-band base stations and radar RF front-ends.

[0072] Of course, in the embodiments of this application, the first preset mode and the second preset mode can also adopt other excitation modes, such as TE. 103 and TE 301 TE 203 and TE 302 As long as they are orthogonal electromagnetic field resonance modes, they are acceptable.

[0073] like Figure 1 As shown in the embodiment of this application, the orthographic projection of the coupling aperture 310 on the first metal layer 111 at least partially coincides with the input feed line end 1112.

[0074] Here, the first substrate waveguide resonant cavity 100 and the second substrate waveguide resonant cavity 200 are rectangular cavities, and the coupling aperture 310 has four holes around the perimeter of the shared cavity wall.

[0075] For example, the dimensions of the first metal layer 111 and the second metal layer 211 described above are both 63.5mm*63.5mm. In reality, the dimensions of the first metal layer 111 and the second metal layer 211 depend on the operating frequency of the device. The higher the operating frequency, the smaller the metal surface area, and vice versa. Therefore, the dimensions of the first metal layer 111 and the second metal layer 211 need to be adjusted accordingly to the frequency requirements.

[0076] When the excitation signal is transmitted from the input feed terminal 1112 of the lower layer to the output feed terminal 2112, there are two transmission paths: the excitation signal passes through the coupling aperture 310 from the first substrate waveguide resonator of the lower layer to the second substrate waveguide resonator cavity 200, and is then output through the output feed terminal 2112; the excitation signal is directly coupled with the coupling aperture 310 and is output from the second substrate waveguide resonator cavity 200 through the output feed terminal 2112.

[0077] like Figure 5 and Figure 6 As shown, the orthographic projection of the coupling aperture 310 on the first metal layer 111 coincides with the input feed line end 1112. That is, the coupling aperture 310 is positioned directly opposite the input feed line end 1112 in the height direction. Consequently, at frequencies below the resonant frequency, the two transmission paths mentioned above have similar amplitudes and opposite phases at the output feed line end 2112, canceling each other out on the left side of each passband to generate two transmission zeros. Figure 5 Points A and B on one of the frequency combiners, Figure 6 The coupling apertures at points C and D on another frequency combiner introduce cross-coupling between the signal source and the upper second substrate waveguide resonant cavity 200, enhancing the steep drop in the passband.

[0078] It should be noted that in this embodiment, a total of four coupling openings 310 are designed. The four coupling openings 310 are located at the four edges of the intermediate metal layer 300. The diameter, position and number of coupling openings 310 can be flexibly adjusted according to different application scenarios.

[0079] like Figure 1 As shown in the embodiment of this application, two first disturbance grooves 1111 are spaced apart on the first metal layer 111, and the two first disturbance grooves 1111 extend in the same direction; two second disturbance grooves 2111 are spaced apart on the second metal layer 211, and the orthographic projection of the two second disturbance grooves 2111 on the first metal layer 111 coincides with the first disturbance grooves 1111.

[0080] The first disturbance slot 1111 and the second disturbance slot 2111 are configured to adjust the resonant frequency of the excitation signal in the first substrate waveguide resonant cavity 100 and the second substrate waveguide resonant cavity 200.

[0081] In the above embodiments, the first disturbance groove 1111 and the second disturbance groove 2111 are both rectangular grooves. The orthographic projection of the two second disturbance grooves 2111 on the first metal layer 111 coincides with the first disturbance groove 1111, which can ensure that the electromagnetic disturbances of the first substrate waveguide resonant cavity 100 and the second substrate waveguide resonant cavity 200 are synchronously symmetrical, and avoid abrupt changes in the excitation mode due to misalignment.

[0082] Generally, the dimensions of the first disturbance groove 1111 and the second disturbance groove 2111 can be changed by etching process. The lengths of the two first disturbance grooves 1111 are negatively correlated with the resonant frequency, and / or the lengths of the two second disturbance grooves 2111 are negatively correlated with the resonant frequency.

[0083] The longer the length of the first disturbance slot 1111 and the second disturbance slot 2111, the lower the resonant frequency.

[0084] As an alternative implementation, two first disturbance through holes 1121 are spaced apart on the first dielectric layer 112, and two second disturbance through holes 2121 are spaced apart on the second dielectric layer 212. The line connecting the orthographic projections of the first disturbance through holes 1121 and the second disturbance through holes 2121 on the first metal layer 111 coincides with the axis of the first disturbance groove 1111.

[0085] The first disturbance via 1121 and the second disturbance via 2121 are configured to adjust the resonant frequency of the excitation signal in the first substrate waveguide resonant cavity 100 and the second substrate waveguide resonant cavity 200.

[0086] The first disturbance via 1121 and the second disturbance via 2121 mentioned above have the same function as the first disturbance slot 1111 and the second disturbance slot 2111. The first disturbance via 1121 and the second disturbance via 2121 have the same size. They are all for the purpose of disturbing the resonant frequency of the energy input from the input feed line 1112 in the upper and lower SIW resonant cavities.

[0087] The greater the distance between the two first disturbance vias 1121, the lower the resonant frequency.

[0088] like Figure 1 and Figure 2 As shown, another embodiment of this application also provides a multi-system access platform, including:

[0089] At least two antennas with radiating ends of 400°;

[0090] At least two frequency combiners in any of the above embodiments, each frequency combiner having an output feed terminal 2112;

[0091] The bridge 500 has one end connected to at least two output feed terminals 2112 and the other end connected to at least two antenna radiating terminals 400, so that the antenna radiating terminals 400 and the frequency combiner are connected in a one-to-one correspondence.

[0092] In the above embodiments, the two frequency combiners can share the same waveguide assembly and intermediate metal layer 300, or they can be set independently. For example, Figure 2 In the middle, two first metal layers 111 are arranged sequentially upwards along the height direction. Each first metal layer 111 has two input feed terminals 1112. The two input feed terminals 1112 on one first metal layer 111 are respectively connected to Figure 2 Source 1 and source 2 are connected to the two input feed terminals 1112 on the other first metal layer 111 respectively. Figure 2 The signal sources 3 and 4 are provided; a first dielectric layer 112 is provided, and two annular metal via arrays 2122 are provided on the first dielectric layer 112, which separates and forms two first substrate waveguide resonant cavities 100; two sets of coupling openings 310 are provided on the middle metal layer 300, and four coupling openings 310 are arranged around the metal via arrays 2122 respectively; two annular metal via arrays 2122 are provided on the second dielectric layer 212, which separates and forms two second substrate waveguide resonant cavities 200; two second metal layers 211 are provided on the top layer, and each second metal layer 211 is provided with an output feed terminal 2112. Each output feed terminal 2112 is connected to a bridge 500 and is connected to the external antenna radiating terminal 400 (i.e., Figure 2 Antenna 1 and Antenna 2 are connected in a one-to-one correspondence.

[0093] According to the above design scheme, the performance of the first frequency combiner (source 1, source 2) is as follows: Figure 5 As shown. Figure 5 In the diagram, S11 represents the energy reflection parameter at the output feeder end, S21 represents the energy transfer parameter from one input feeder end to the output feeder end, S31 represents the energy transfer parameter from the other input feeder end to the output feeder end, and S32 represents the energy transfer parameter between the two input feeder ends. The frequency range of channel 1 corresponding to source 1 is 3.7191 GHz to 3.8351 GHz (bandwidth 116 MHz), and the frequency range of channel 2 corresponding to source 2 is 4.0561 GHz to 4.1676 GHz (bandwidth 111.5 MHz). The insertion losses of the two channels are 0.48 dB and 0.56 dB, respectively, and the isolation is better than 20 dB for both.

[0094] By adjusting the first disturbance slot 1111, the second disturbance slot 2111, the first disturbance through-hole 1121, and the second disturbance through-hole 2121, the performance of the second frequency combiner (source 3, source 4) is as follows: Figure 6 As shown in the diagram. S11 represents the energy reflection parameter at the output feeder end, S21 represents the energy transfer parameter from one input feeder end to the output feeder end, S31 represents the energy transfer parameter from the other input feeder end to the output feeder end, and S32 represents the energy transfer parameter between the two input feeder ends. The frequency range of channel 1 corresponding to source 3 is 3.6653 GHz to 3.7797 GHz (bandwidth 114.4 MHz), and the frequency range of channel 2 corresponding to source 4 is 4.0215 GHz to 4.1348 GHz (bandwidth 113.3 MHz). The insertion losses of the two channels are 0.59 dB and 0.57 dB, respectively, and the isolation is better than 20 dB for both.

[0095] The multi-system access platform of this application embodiment has all the advantages of a frequency combiner because it includes the frequency combiner in any of the above embodiments.

[0096] Other embodiments of this application will readily occur to those skilled in the art upon consideration of the specification and practice of the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of this application that follow the general principles of this application and include common knowledge or customary techniques in the art not disclosed herein. The specification and examples are to be considered exemplary only, and the true scope and spirit of this application are indicated by the following claims.

[0097] It should be understood that this application is not limited to the precise structure described above and shown in the accompanying drawings, and various modifications and changes can be made without departing from its scope. The scope of this application is limited only by the appended claims.

Claims

1. A frequency combiner, characterized in that, include: The first substrate waveguide resonant cavity has at least two input feed terminals, which are used to introduce excitation signals from different sources, and the positions of the at least two input feed terminals are configured to correspond to different electromagnetic field resonance modes of the first substrate waveguide resonant cavity. A second substrate waveguide resonant cavity is stacked on the first substrate waveguide resonant cavity. The second substrate waveguide resonant cavity has an output feed line terminal, and the second substrate waveguide resonant cavity and the first substrate waveguide resonant cavity share a common cavity wall. The common cavity wall is provided with at least two through coupling openings, which connect the first substrate waveguide resonant cavity and the second substrate waveguide resonant cavity, so that the excitation signals input from at least two input feed terminals are transmitted to the second substrate waveguide resonant cavity and output to the external antenna radiating terminal after being combined through the output feed terminal. It also includes a first waveguide assembly, an intermediate metal layer and a second waveguide assembly stacked in sequence. The first waveguide assembly includes a first metal layer and a first dielectric layer stacked in sequence. The second waveguide assembly includes a second metal layer and a second dielectric layer stacked in sequence. The intermediate metal layer is located between the first dielectric layer and the second dielectric layer. Of the at least two input feed terminals, one input feed terminal is located at the wave node of the first metal layer in the first preset mode and at the antinode of the first substrate waveguide resonator in the second preset mode; the other input feed terminal is located at the wave node of the first substrate waveguide resonator in the second preset mode and at the antinode of the first substrate waveguide resonator in the first preset mode; the first preset mode and the second preset mode are mutually orthogonal electromagnetic field resonance modes.

2. The frequency combiner according to claim 1, characterized in that, The first waveguide component and the intermediate metal layer together constitute the first substrate waveguide resonant cavity, and the second waveguide component and the intermediate metal layer together constitute the second substrate waveguide resonant cavity, with the intermediate metal layer forming the common cavity wall.

3. The frequency combiner according to claim 2, characterized in that, The intermediate metal layer is located between the first dielectric layer and the second dielectric layer; Both the first dielectric layer and the second dielectric layer are provided with a plurality of metal vias, which are arranged in a ring array. At least two input feed terminals are provided on the first metal layer, and the output feed terminals are provided on the second metal layer.

4. The frequency combiner according to claim 3, characterized in that, Two first disturbance grooves are spaced apart on the first metal layer, and the two first disturbance grooves extend in the same direction; two second disturbance grooves are spaced apart on the second metal layer, and the orthographic projection of the two second disturbance grooves on the first metal layer coincides with the first disturbance grooves. The first disturbance slot and the second disturbance slot are configured to adjust the resonant frequency of the excitation signal in the first substrate waveguide resonant cavity and the second substrate waveguide resonant cavity.

5. The frequency combiner according to claim 4, characterized in that, Two first disturbance vias are spaced apart on the first dielectric layer, and two second disturbance vias are spaced apart on the second dielectric layer. The line connecting the orthographic projections of the first disturbance vias and the second disturbance vias on the first metal layer coincides with the axis of the first disturbance groove. The first and second perturbation vias are configured to adjust the resonant frequencies of the excitation signal in the first and second substrate waveguide resonant cavities.

6. The frequency combiner according to claim 5, characterized in that, The lengths of the two first perturbation slots are inversely proportional to the resonant frequency, and / or the lengths of the two second perturbation slots are inversely proportional to the resonant frequency; The spacing between the two first perturbation vias is proportional to the resonant frequency, and / or the spacing between the two second perturbation vias is positively correlated with the resonant frequency.

7. The frequency combiner according to any one of claims 1 to 6, characterized in that, The orthographic projection of the coupling aperture on the first metal layer at least partially coincides with the input feed line end.

8. The frequency combiner according to any one of claims 1 to 6, characterized in that, The first substrate waveguide resonant cavity and the second substrate waveguide resonant cavity are rectangular cavities, and the coupling opening has four holes distributed around the four sides of the common cavity wall.

9. A multi-system access platform, characterized in that, include: At least two antenna radiating ends; At least two frequency combiners as described in any one of claims 1 to 8, each of the frequency combiners having an output feed terminal; The bridge has one end connected to at least two of the output feed terminals and the other end connected to at least two of the antenna radiating terminals, so that the antenna radiating terminals and the frequency combiner are connected in a one-to-one correspondence.

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