High-conductivity graphene / copper thin film material based on plasma processing technology and preparation method of high-conductivity graphene / copper thin film material

Abstract

The invention relates to a high-conductivity graphene / copper thin film material based on a plasma processing technology and a preparation method thereof. The high-conductivity graphene / copper thin film material comprises an insulating substrate, a copper thin film and a graphene thin film which are sequentially stacked, the graphene film has graphene defects prepared through a plasma processing technology. Graphene defects are regulated and controlled by adjusting plasma etching time and radio frequency power supply power, interface bonding of graphene and a copper matrix can be further enhanced, and therefore the conductivity of the composite material is improved.

Description

Technical Field

[0001] The present invention belongs to the field of conductive materials, and in particular relates to a highly conductive graphene / copper thin film material based on plasma processing technology and a preparation method thereof. Background Art

[0002] Copper metal, with its excellent electrical and thermal conductivity, as well as its relatively low cost, is widely used in various fields such as transportation, electronics, aerospace, and machinery. With the advancement of science and technology and the development of emerging industries, the requirements for copper material performance are also constantly increasing, especially the demand for high electrical conductivity.

[0003] While research on ultra-high conductive copper materials has made some progress, it still faces challenges such as complex preparation processes and unstable performance, which limits their promotion in practical applications. Therefore, it is particularly important to explore new copper material enhancement technologies to improve its conductivity.

[0004] Graphene, an emerging two-dimensional nanomaterial, has attracted widespread attention due to its outstanding electrical, mechanical, and thermal properties. Combining graphene with copper-based materials to create graphene-reinforced copper-based composites is considered an effective approach to achieving ultra-high electrical conductivity. The bonding strength between graphene defects or edges and copper is much stronger than that between graphene continuous regions. This means that by manipulating the structure and morphology of graphene, its interfacial bonding with the copper matrix can be further enhanced, thereby improving the conductivity of the composite material.

[0005] Plasma etching is an effective technique that can precisely control the graphene surface, introducing defects or altering its morphology, thereby enhancing the bonding between graphene and the copper substrate. This method not only provides new ideas for preparing highly conductive graphene / copper materials, but also offers a new solution to the current challenges in preparing ultra-high conductive copper materials. Summary of the Invention

[0006] The technical problem to be solved by the present invention is to provide a highly conductive graphene / copper thin film material based on plasma treatment technology and a preparation method thereof, so as to enhance the bonding properties of graphene and copper, thereby improving the conductive properties of the composite material.

[0007] The present invention provides a high-conductivity graphene / copper film material based on plasma processing technology, which comprises an insulating substrate, a copper film and a graphene film in sequence; the graphene film has graphene defects produced by the plasma processing technology.

[0008] The present invention provides a method for preparing a highly conductive graphene / copper thin film material based on plasma processing technology, comprising the following steps:

[0009] S1. depositing a copper thin film on the surface of an insulating substrate;

[0010] S2. Introducing a carbon source to grow a continuous graphene film on the surface of the copper film;

[0011] S3. Prepare a defective graphene film by plasma etching a continuous graphene film, thereby obtaining a highly conductive graphene / copper thin film material.

[0012] Preferably, the material of the insulating substrate in step S1 includes but is not limited to sapphire.

[0013] Preferably, the deposition method in step S1 includes one of thermal evaporation and electron beam deposition.

[0014] Preferably, the deposition thickness of the copper film in step S1 is 100-1000 nm.

[0015] Preferably, the carbon source in step S2 includes but is not limited to one or a combination of methane, ethylene, and acetylene.

[0016] Preferably, the growth method in step S2 includes chemical vapor deposition (CVD), and the growth temperature is 900-1070°C.

[0017] Preferably, the plasma type in step S3 includes either hydrogen or argon.

[0018] Preferably, the amount of graphene defects is controlled by adjusting the radio frequency power of the plasma and the etching time in step S3.

[0019] Preferably, the radio frequency power of the plasma is 10 to 100 W; and the etching time is 1 to 180 min.

[0020] Beneficial effects

[0021] The present invention etches graphene through plasma technology to create graphene defects. Compared with the existing technology, its technical advantage is that the graphene defects can be controlled by adjusting the etching time and the radio frequency power supply. The conductivity of the graphene / copper thin film material prepared by this method can reach 115.4% IACS. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 This is a macroscopic image of the graphene / copper thin film material after hydrogen plasma etching in Example 1 of the present invention.

[0023] Figure 2 This is a Raman spectrum of the graphene / copper thin film material after hydrogen plasma etching in Example 1 of the present invention.

[0024] Figure 3This is a scanning electron microscope image of the graphene / copper thin film material after hydrogen plasma etching in Example 1 of the present invention. DETAILED DESCRIPTION

[0025] Below in conjunction with specific embodiment, further set forth the present invention.Should be understood that these embodiments are only used to illustrate the present invention and are not used in limiting the scope of the present invention.In addition, should be understood that after reading the content taught by the present invention, those skilled in the art can make various changes or modifications to the present invention, and these equivalent forms fall equally within the scope limited by the appended claims of the application.

[0026] Example 1

[0027] The preparation of the graphene / copper thin film material in this embodiment includes the following steps:

[0028] S1. Deposit a 500 nm thick copper film on a clean sapphire substrate using an electron beam evaporation device.

[0029] S2. The copper film prepared above was placed in a horizontal furnace, into which 500 sccm of argon, 20 sccm of hydrogen, and 5 sccm of methane were introduced, and grown at 1050°C for 60 min to obtain a graphene / copper material;

[0030] S3. After evacuating the tube to a vacuum using a vacuum pump, introduce 10 sccm of hydrogen into the tube and maintain the gas pressure at 150 Pa using a pressure control device. Turn on the RF power supply, set the RF power to 30 W, and etch the graphene / copper for 30 minutes to obtain a graphene / copper thin film material with graphene defects after plasma etching.

[0031] Figure 1 This is a macroscopic picture of the graphene / copper thin film material in this embodiment, with a smooth and flat surface; Figure 2 This is the Raman spectrum, located at about 1350cm -1 The D peak at is the characteristic peak of graphene defects; Figure 3 This is a scanning electron microscope image showing graphene defects.

[0032] Example 2

[0033] The preparation of the graphene / copper thin film material in this embodiment refers to Example 1, except that: the thickness of the copper film in step S1 is 800 nm; and the plasma etching time in step S3 is 20 minutes.

[0034] Example 3

[0035] The preparation of the graphene / copper thin film material in this example was similar to that in Example 1, with the following differences: the copper film thickness in step S1 was 800 nm; the RF power in step S3 was 25 W, and the plasma etching time was 20 minutes. The shorter etching time reduced graphene defects, and the thicker copper film weakened the graphene's influence on the overall conductivity of the system, resulting in poorer conductivity of the graphene / copper thin film material.

[0036] Comparative Example 1

[0037] The preparation of the graphene / copper thin film material in this comparative example refers to Example 1, except that: plasma etching is not performed in step S3.

[0038] The thickness of the graphene / copper thin film materials obtained in Examples 1 to 3 was measured using a step profiler, and the sheet resistance thereof was measured using a four-probe method. The electrical conductivity of the graphene / copper thin film materials after plasma treatment was calculated. The results are shown in Table 1. The electrical conductivity of the graphene / copper thin film material prepared by the method of the present invention can reach 115.4% IACS.

[0039] Table 1 Electrical conductivity of graphene / copper film materials prepared in the examples of the present invention and the comparative examples

[0040] Material samples Example 1 Example 2 Example 3 Comparative Example 1 Conductivity 115.4% IACS 102.5% IACS 101.3% IACS 100.1% IACS

Claims

1. A highly conductive graphene / copper thin film material based on plasma processing technology, characterized in that: The invention comprises an insulating substrate, a copper film and a graphene film which are stacked in sequence; the graphene film has graphene defects produced by plasma processing technology.

2. A method for preparing a highly conductive graphene / copper thin film material based on plasma processing technology, comprising the following steps: S1. depositing a copper thin film on the surface of an insulating substrate; S2. Introducing a carbon source to grow a continuous graphene film on the surface of the copper film; S3. Prepare a defective graphene film by plasma etching a continuous graphene film, thereby obtaining a highly conductive graphene / copper thin film material.

3. The method for preparing a highly conductive graphene / copper thin film material based on plasma treatment technology according to claim 2, wherein: The material of the insulating substrate in step S1 includes sapphire.

4. The method for preparing a highly conductive graphene / copper thin film material based on plasma treatment technology according to claim 2, wherein: The copper film is deposited to a thickness of 100 to 1000 nm in step S1.

5. The method for preparing a highly conductive graphene / copper thin film material based on plasma treatment technology according to claim 2, wherein: The carbon source in step S2 includes one or a combination of methane, ethylene, and acetylene.

6. The method for preparing a highly conductive graphene / copper thin film material based on plasma processing technology according to claim 2, wherein: The growth method in step S2 includes chemical vapor deposition, and the growth temperature is 900-1070°C.

7. The method for preparing a highly conductive graphene / copper thin film material based on plasma treatment technology according to claim 2, wherein: The plasma type in step S3 includes either hydrogen or argon.

8. The method for preparing a highly conductive graphene / copper thin film material based on plasma treatment technology according to claim 2, wherein: The amount of graphene defects is controlled by adjusting the radio frequency power of the plasma and the etching time in step S3.

9. The method for preparing a highly conductive graphene / copper thin film material based on plasma processing technology according to claim 8, characterized in that: The radio frequency power of the plasma is 10 to 100 W; and the etching time is 1 to 180 minutes.

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