Method and system for de-embedding measurement of electrical parameters of passive device
By constructing open-circuit and short-circuit test circuits, measuring and converting S parameters into Y-parameter matrices, and stripping out parasitic effects, the problem of large errors in measuring the electrical parameters of passive components in high-frequency integrated circuits is solved, and high-precision de-embedding processing is achieved. It is suitable for high-frequency measurement and modeling of components such as capacitors and inductors.
Patent Information
- Application Number
- CN202510974531.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-07-15
- Publication Date
- 2025-09-26
AI Technical Summary
In high-frequency integrated circuit testing, existing technologies have difficulty effectively removing parasitic effects from GSG test structures, resulting in large errors in the measurement of passive device electrical parameters. In particular, the de-embedding accuracy is insufficient in asymmetric structures, affecting device design and modeling.
By constructing open-circuit and short-circuit test circuits, measuring S parameters and converting them into Y-parameter matrices, calculating admittance parameters and impedance parameters, and using mathematical conversion methods to remove parasitic effects, high-precision de-embedding of passive components is achieved.
It improves the precision and accuracy of electrical parameter measurements of passive components, expands the applicability of traditional methods, and is particularly suitable for high-frequency measurements of components such as capacitors and inductors, simplifying the modeling and performance verification of passive components.
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Figure CN120703495A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of passive device measurement, and in particular to a de-embedding measurement method and system for electrical parameters of passive devices. Background Art
[0002] In high-frequency (e.g., RF and millimeter-wave) integrated circuit testing, directly measuring the device's true performance (e.g., S-parameters) is affected by parasitic effects in the test environment (probes, pads, interconnects, etc.). These non-ideal factors introduce errors, resulting in measurement results that fail to reflect the device's inherent characteristics. GSG, a common microwave test structure, uses a "ground-signal-ground" layout to reduce crosstalk and provide a stable reference ground, making it widely used for high-frequency measurements of on-chip devices. However, the GSG structure itself includes parasitic parameters of non-devices under test (e.g., pads and transmission lines), and these parasitic effects are superimposed on the measurement of the device under test (DUT). De-embedding technology aims to remove parasitic effects (e.g., pad resistance and transmission line loss) from the overall measurement data of the GSG test structure to extract the DUT's true performance.
[0003] With the rapid development of integrated circuits, the design and manufacturing materials of passive components are also constantly evolving. For example, deep trench capacitors with high capacitance density have increased the complexity of coupling between electrodes due to the influence of deep trench structure and electrode materials. The nonlinear coupling caused by the mutual influence of parasitic effects and DUT characteristics at high frequencies makes it more difficult to directly separate parasitic parameters. At the same time, different GSG layouts (such as size, spacing, etc.) will cause parasitic parameters to vary, requiring targeted modeling. While traditional open-short de-embedding and straight-through de-embedding methods can demonstrate certain advantages when dealing with symmetrical test structures, they often suffer from insufficient de-embedding accuracy in asymmetric test structures. How to effectively strip off the parasitic parameters on the device and obtain the electrical characteristics of the device itself has become a technical problem that needs to be solved urgently. Summary of the Invention
[0004] The main purpose of the present invention is to overcome the above-mentioned defects in the prior art and propose a de-embedding measurement method and system for the electrical parameters of passive devices, which can achieve high-precision de-embedding of passive devices, facilitate the effective acquisition of the electrical characteristics of the device under test itself, and facilitate the subsequent design modeling of the passive device itself.
[0005] The present invention adopts the following technical solutions:
[0006] A de-embedding measurement method for electrical parameters of a passive device comprises the following steps:
[0007] Constructing an original test circuit including a passive device to be tested, an open-circuit test circuit obtained by removing the passive device to be tested from the original test circuit, and a short-circuit test circuit obtained by short-circuiting an open circuit of the open-circuit test circuit;
[0008] Measuring the S parameters of the original test circuit, the open circuit test circuit, and the short circuit test circuit respectively to obtain an S parameter matrix and performing parameter conversion to obtain a corresponding Y parameter matrix;
[0009] Calculating the admittance parameter of the passive device to be tested to ground and the impedance parameter of the passive device to be tested after parameter stripping according to the Y parameter matrix, and calculating the Y parameter matrix of the passive device to be tested after de-embedding according to the admittance parameter of the passive device to ground and the impedance parameter;
[0010] The Y parameter matrix of the passive device to be tested is parameter-converted to obtain a corresponding S parameter matrix, and the required electrical parameters of the passive device to be tested are extracted through the S parameter matrix of the passive device to be tested.
[0011] The S parameter matrix is converted into the corresponding Y parameter matrix using the following formula:
[0012]
[0013] Among them, Z0 is the characteristic impedance, Y 11 、Y 12 、Y 21 、Y 22 are the input admittance of the Y parameter matrix, the transfer admittance when the input port is short-circuited, the transfer admittance when the output port is short-circuited, and the output admittance; and S 11 、S 12 、S 21 、S 22 are the input reflection coefficient, reverse transmission coefficient, forward transmission coefficient and output reflection coefficient of the S parameter matrix respectively.
[0014] Calculate the impedance parameter Z of the passive device to be tested after parameter stripping according to the Y parameter matrix corresponding to the original test circuit and the open circuit test circuit dut :
[0015]
[0016] Among them, Y raw (1,2) is the transfer admittance of the Y parameter matrix of the original test circuit when the input port is short-circuited;
[0017] Y open (1,2) is the transfer admittance of the Y parameter matrix of the open circuit test circuit when the input port is short-circuited; Z roIt is the sum of the series resistance and series inductance caused by the input port, output port and metal connection wires of the test circuit, and a is the short-circuit coefficient.
[0018] The sum Z of the series resistance and series inductance caused by the input port, the output port and the metal transmission line of the test circuit ro The calculation is as follows:
[0019]
[0020] Among them, Y thru (1,2) is the transfer admittance of the Y parameter matrix of the short-circuit test circuit when the input port is short-circuited, Y open (1,2) is the transfer admittance of the Y parameter matrix of the open circuit test circuit when the input port is short-circuited.
[0021] Calculate the admittance parameter Y of the passive device to be tested to ground according to the Y parameter matrix of the short-circuit test circuit s1 and Y s2 :
[0022] Y s1 =Y thru (1,1)+Y thru (1,2)
[0023] Among them, Y thru (1,1) is the input admittance of the Y parameter matrix of the short-circuit test circuit, Y thru (1,2) is the transfer admittance of the Y parameter matrix of the short-circuit test circuit when the input port is short-circuited.
[0024] Y s2 =Y thru (2,2)+Y thru (2,1)
[0025] Among them, Y thru (2,2) is the output admittance of the Y parameter matrix of the short-circuit test circuit, Y thru (2,1) is the transfer admittance of the output port of the Y parameter matrix of the short-circuit test circuit when it is short-circuited.
[0026] The Y parameter matrix of the passive device under test after de-embedding is calculated according to the admittance parameter of the passive device under test to ground and the impedance parameter:
[0027]
[0028] Among them, Y s1 、Y s2 are the admittance parameters of the passive device to be tested to the ground, Z dut The impedance parameters of the passive device to be tested after parameter stripping.
[0029] The passive device to be tested is a resistor, an inductor, a capacitor or a filter.
[0030] A de-embedding measurement system for electrical parameters of passive devices, comprising:
[0031] a test circuit construction module, configured to construct an original test circuit comprising a passive device to be tested, an open-circuit test circuit obtained by removing the passive device to be tested from the original test circuit, and a short-circuit test circuit obtained by short-circuiting an open circuit of the open-circuit test circuit;
[0032] A parameter measurement module is used to measure the S parameters of the original test circuit, the open circuit test circuit and the short circuit test circuit respectively, and convert the S parameter matrix into a corresponding Y parameter matrix;
[0033] a de-embedding processing module, configured to calculate the admittance parameters of the passive device to be tested to the ground and the impedance parameters of the passive device to be tested after stripping according to the Y parameter matrix, and calculate the Y parameter matrix of the passive device to be tested after de-embedding according to the admittance parameters and impedance parameters of the passive device to be tested to the ground;
[0034] The parameter conversion module is used to convert the Y parameter matrix of the passive device to be tested into the corresponding S parameter matrix, and extract the electrical parameters of the passive device through the S parameter matrix.
[0035] From the above description of the present invention, it can be seen that compared with the prior art, the present invention has the following beneficial effects:
[0036] 1. The present invention effectively removes the influence of parasitic parameters of the test circuit. Through the structural design of open-circuit and short-circuit test circuits, the parasitic effects introduced by pads, transmission lines, etc. are accurately calculated and removed, thereby improving the measurement accuracy of the passive device body parameters.
[0037] 2. The present invention adopts the Y-parameter matrix operation method, through mathematical conversion and parameter stripping algorithm, to achieve the de-embedding processing of asymmetric passive components, expanding the applicability of traditional methods.
[0038] 3. The present invention corrects the parasitic effects introduced by the short-circuit coefficient, optimizes the parameter extraction accuracy in high-frequency measurement scenarios, and is particularly suitable for equivalent series parameter analysis of devices such as capacitors and inductors.
[0039] 4. The present invention provides a complete SY parameter conversion method, supports the automated calculation process from raw measurement data to de-embedded device parameters, and simplifies the steps of passive device modeling and performance verification. BRIEF DESCRIPTION OF THE DRAWINGS
[0040] Figure 1 This is the main flow chart of the method of the present invention;
[0041] Figure 2 This is the original test circuit diagram;
[0042] Figure 3 is the equivalent circuit model of the original test structure;
[0043] Figure 4 This is the schematic diagram of the open circuit test circuit;
[0044] Figure 5 is the equivalent circuit model of the open circuit test circuit;
[0045] Figure 6 This is a schematic diagram of the short-circuit test circuit;
[0046] Figure 7 is the equivalent circuit model of the short-circuit test circuit;
[0047] Figure 8 Process s2p files for simulation;
[0048] Figure 9 Comparison of results before and after ESR de-embedding;
[0049] Figure 10 Comparison of results before and after ESL de-embedding;
[0050] Figure 11 Comparison of capacitance and self-resonant frequency before and after de-embedding.
[0051] Figure 12 Comparison of results before and after S-parameter de-embedding.
[0052] The present invention is further described in detail below with reference to the accompanying drawings and specific embodiments. DETAILED DESCRIPTION
[0053] The present invention is further described below through specific embodiments.
[0054] See also Figure 1 A de-embedding measurement method for electrical parameters of a passive device comprises the following steps:
[0055] S1 constructs an original test circuit containing the passive device to be tested, an open circuit test circuit obtained by removing the passive device to be tested from the original test circuit, and a short circuit test circuit obtained by shorting the open circuit of the open circuit test circuit. The following describes these three test circuits respectively:
[0056] like Figure 2The original test circuit shown in the figure includes GSG pads, passive devices under test (DUT) and metal connecting wires. The GSG pads include input port S, output port S and ground terminal G. The metal connecting wires are used to connect the passive devices under test between the input port and the output port and to connect to the ground terminal. The passive devices under test are resistors, inductors, capacitors or filters. Figure 3 The equivalent circuit model of the original test circuit consists of two complex impedance elements and three complex admittance elements. There is a certain capacitance between the GSG pad structure and the metal trace, which is represented by Y c Indicates that Y c Represents the coupling capacitance between the input port and the output port. Z s1 With Z s2 It represents the series impedance between the input port and the output port and the passive device under test DUT, Z s1 With Z ss It is mainly caused by GSG pads and metal transmission lines and is expressed as the sum of series resistance and series inductance. s1 With Y s2 Indicates the admittance parameter of the passive device under test (DUT) to ground.
[0057] The open circuit test circuit can generally be realized by leaving the port unconnected. The schematic diagram of its structure is as follows: Figure 4 The open circuit test circuit is based on the original test circuit by removing the passive device DUT and retaining the admittance parameters of the GSG structure itself. Figure 5 It is the equivalent circuit model of the open circuit test circuit, which is similar to a π-type structure.
[0058] The short circuit test circuit includes GSG pads, metal connecting wires and introduced metal leads, such as Figure 6 shown. Figure 7 The short-circuit test circuit replaces the passive device under test in the original short circuit with a metal lead. The shorter the metal lead, the higher the de-embedding accuracy.
[0059] S2 measures the S parameters of the original test circuit, the open-circuit test circuit, and the short-circuit test circuit respectively to obtain an S parameter matrix and performs parameter conversion to obtain a corresponding Y parameter matrix.
[0060] In this step, the S parameters of the original test circuit, the open circuit test circuit, and the short circuit test circuit are measured to obtain the corresponding S parameter matrices, which are defined as S raw 、S open 、S thru The S parameter matrices of the three test circuits are converted into the corresponding Y parameter matrices Y raw 、Y open 、Y thru, which can be directly converted through the following formula:
[0061]
[0062] Z0 is the characteristic impedance, Y 11 、Y 12 、Y 21 、Y 22 are the input admittance of the Y parameter matrix, the transfer admittance when the input port is short-circuited, the transfer admittance when the output port is short-circuited, and the output admittance; and S 11 、S 12 、S 21 、S 22 are the input reflection coefficient, reverse transmission coefficient, forward transmission coefficient and output reflection coefficient of the S parameter matrix respectively.
[0063] S3 calculates the admittance parameters of the passive device under test to the ground introduced by the test circuit and the impedance parameters of the passive device under test after parameter stripping according to the Y parameter matrix, and calculates the Y parameter matrix of the passive device under test after de-embedding according to the admittance parameters and impedance parameters of the passive device under test to the ground.
[0064] In this step, the impedance parameter Z of the passive device to be tested after parameter stripping is calculated based on the Y parameter matrix corresponding to the original test circuit and the open circuit test circuit. dut :
[0065]
[0066] Among them, Y raw (1,2) is the transfer admittance of the Y parameter matrix of the original test circuit when the input port is short-circuited; Y open (1,2) is the transfer admittance of the Y parameter matrix of the open circuit test circuit when the input port is short-circuited; Z ro It is the sum of the series resistance and series inductance caused by the input port, output port and metal connection wires of the test circuit, and a is the short-circuit coefficient.
[0067] The sum of the series resistance and series inductance caused by the input port, output port and metal transmission line of the test circuit is Z ro The calculation is as follows:
[0068]
[0069] Among them, Y thru (1,2) is the transfer admittance of the Y parameter matrix of the short-circuit test circuit when the input port is short-circuited, Y open (1,2) is the transfer admittance of the Y parameter matrix of the open circuit test circuit when the input port is short-circuited.
[0070] Since the short-circuit test circuit introduces a metal lead l2 as a short-circuit transmission line, the metal lead l2 will also have parasitic effects on the passive device DUT itself. Therefore, in theory, the short-circuit line design needs to meet the characteristics of being short and thick as much as possible, that is, the shorter the short-circuit line, the smaller the additional parasitic parameters introduced. When the parasitic parameters of the introduced short-circuit line cannot be ignored, the short-circuit test circuit needs to be parameter stripped. This can be done by adjusting the Z ro Multiply by the short-circuit factor a, where a is defined as:
[0071]
[0072] Where l1 is the total length of the short-circuited transmission line, and l2 is the length of the newly introduced metal lead, such as Figure 6 As stated.
[0073] In this step, the admittance parameter Y of the passive device to be tested to ground is calculated based on the Y parameter matrix of the short-circuit test circuit. s1 and Y s2 :
[0074] Y s1 =Y thru (1,1)+Y thru (1,2);
[0075] Among them, Y thru (1,1) is the input admittance of the Y parameter matrix of the short-circuit test circuit, Y thru (1,2) is the transfer admittance of the Y parameter matrix of the short-circuit test circuit when the input port is short-circuited.
[0076] Y s2 =Y thru (2,2)+Y thru (2,1);
[0077] Among them, Y thru (2,2) is the output admittance of the Y parameter matrix of the short-circuit test circuit, Y thru (2,1) is the transfer admittance of the output port of the Y parameter matrix of the short-circuit test circuit when it is short-circuited.
[0078] S4 performs parameter conversion on the Y parameter matrix of the passive device to be tested to obtain a corresponding S parameter matrix, and extracts the required electrical parameters of the passive device through the S parameter matrix of the passive device to be tested.
[0079] The Y parameter matrix of the passive device under test after de-embedding is calculated based on the admittance parameter and impedance parameter of the passive device under test to ground obtained in step S3:
[0080]
[0081] Among them, Y s1 、Ys2 are the admittance parameters of the passive device to be tested to the ground, Z dut Impedance parameters of the passive device under test after parameter stripping.
[0082] S parameter matrix S of the passive device to be tested dut The Y parameter conversion S parameter formula is obtained:
[0083]
[0084] Z0 is the characteristic impedance, Y 11 、Y 12 、Y 21 、Y 22 are the input admittance of the Y parameter matrix, the transfer admittance when the input port is short-circuited, the transfer admittance when the output port is short-circuited, and the output admittance; and S 11 、S 12 、S 21 、S 22 are the input reflection coefficient, reverse transmission coefficient, forward transmission coefficient and output reflection coefficient of the S parameter matrix respectively.
[0085] In the present invention, the electrical parameters required by the passive device to be tested can be extracted from the S parameter matrix of the passive device to be tested. Taking the capacitor as an example, the equivalent series resistance ESR of the capacitor itself can be the impedance Z of the passive device to be tested DUT itself. dut Extract the real part and get ESR:
[0086] ESR=re(Z dut )
[0087] The equivalent series inductance ESL of the capacitor itself can be used to measure the impedance Z of the passive device DUT itself. dut Extract the imaginary part and approximate it at high frequencies to get:
[0088] ESL=imag(Z dut ) / w
[0089] Wherein, w is the angular frequency, that is, w=2*π*f, and f is the frequency.
[0090] The capacitance of the capacitor itself can be extracted from the admittance parameter of the passive device under test (DUT) and approximated at low frequencies. However, since the equivalent series resistance (ESR) of the capacitor itself will affect the result, this parameter can be stripped off first to obtain the DUT's own susceptance parameter B, that is, B is:
[0091]
[0092] At this time, the capacitance C of the capacitor itself can be obtained, and it can be approximately obtained at the low frequency point as follows:
[0093] C = B / w.
[0094] Based on this, the present invention further proposes a de-embedding measurement system for electrical parameters of passive devices, which is used to perform the above-mentioned de-embedding measurement method for electrical parameters of passive devices, comprising:
[0095] a test circuit construction module for constructing an original test circuit including a passive device to be tested, an open-circuit test circuit obtained by removing the passive device to be tested from the original test circuit, and a short-circuit test circuit obtained by short-circuiting an open circuit of the open-circuit test circuit;
[0096] A parameter measurement module is used to measure the S parameters of the original test circuit, the open circuit test circuit and the short circuit test circuit respectively, and convert the S parameter matrix into a corresponding Y parameter matrix;
[0097] a de-embedding processing module, configured to calculate the admittance parameters of the passive device under test to ground introduced by the test circuit and the impedance parameters of the passive device under test after stripping based on the Y parameter matrix, and calculate the Y parameter matrix of the passive device under test after de-embedding based on the admittance parameters and impedance parameters of the passive device under test to ground;
[0098] The parameter conversion module is used to convert the Y parameter matrix of the passive device to be tested into the corresponding S parameter matrix, and extract the electrical parameters of the passive device through the S parameter matrix.
[0099] The test circuit construction module of the present invention is used to execute step S1 of a de-embedding measurement method for electrical parameters of a passive device, the parameter measurement module is used to execute step S1, the de-embedding processing module is used to execute step S3, and the parameter conversion module is used to execute step S4.
[0100] The present invention analyzes the equivalent circuit model and calculates the circuit structure to achieve de-embedding and measurement of passive components such as capacitors. This can solve the problem that traditional de-embedding and measurement methods can only handle symmetrical structures, and facilitate the design and development of passive components such as capacitors.
[0101] Application examples:
[0102] S1 uses electromagnetic simulation software to model and design the original test circuit, open circuit test circuit and short circuit test circuit, and simulates and measures the S parameters corresponding to the three test circuits respectively, and obtains the corresponding s2p format file, which records the corresponding S parameter matrix information. Take a certain modeled capacitor as an example of the passive device to be tested, import the obtained s2p file, and run the simulation, such as Figure 9 shown.
[0103] S2 uses the SP module to import the corresponding s2p file. At the same time, use parameter conversion to convert S parameters into Y parameters to obtain Y raw 、Yopen 、Y thru .
[0104] S3 uses the measurement formula controller to pass the formula Z ro =-1 / (Y thru (1,2)-Y open (1,2)) The sum of the series resistance and series inductance Z caused by the input port, output port and metal transmission line of the test circuit is obtained ro , and the short-circuit coefficient a=(l1-l2) / l1 is calculated.
[0105] Combined with the Y parameter matrix corresponding to the original test circuit and the open circuit test circuit, the impedance parameter Z of the passive device to be tested after parameter stripping is calculated. dut , Z dut =-1 / (Y raw (1,2)-Y open (1,2))-a*Z ro .
[0106] The equivalent series resistance ESR of the capacitor itself can affect the impedance parameter Z dut Extract the real part to get, that is, ESR = re (Z dut ). Stripping off the ESR and obtaining the capacitance's own susceptance parameter B=imag(1 / (Z dut -ESR)). The capacitance value C of the capacitor itself can be obtained by C=B / w at low frequency. dut ) / w to the impedance Z of the capacitor itself dut Extract the imaginary part and approximate the ESL at high frequencies.
[0107] Calculate Y according to the Y parameter matrix of the short-circuit test circuit s1 =Y thru (1,1)+Y thru (1,2) and Y s2 =Y thru (2,2)+
[0108] Y thru (2,1) Get the admittance parameter Y of the passive device to be tested to the ground s1 With Y s2 .
[0109] Calculate the Y parameter matrix Y of the passive device under test after de-embedding based on the admittance parameters and impedance parameters of the passive device under test to ground. dut :
[0110]
[0111] S4 performs parameter conversion on the Y parameter matrix of the passive device to be tested to obtain a corresponding S parameter matrix, and extracts the required electrical parameters of the passive device through the S parameter matrix of the passive device to be tested.
[0112] Figures 9-12 The comparison curves of the measurement results before and after de-embedding are obtained for this embodiment. Figure 9 The ESR curve of the capacitor after de-embedding can be obtained, which is significantly lower than that before de-embedding, and the frequency characteristic curve of the ESR after de-embedding is more uniform. Figure 10 It can be seen that the ESL before deembedding is 88.220 pH at 10 GHz, while the ESL after deembedding is 13.248 pH. Figure 11 The capacitance of the capacitor is shown to be 77.4 pF at 10 kHz. The SRF (self-resonant frequency) before de-embedding is 1.835 GHz, while the SRF after de-embedding is 4.664 GHz. Figure 12 The S-parameter comparison before and after de-embedding is shown. This result demonstrates that the de-embedding method can significantly reduce the impact of GSG pads and series transmission lines on the DUT's electrical performance, and can also obtain relatively accurate DUT electrical parameters, facilitating the modeling, design, and performance measurement of passive components such as capacitors.
[0113] It should be noted that although several modules or units of the device for action execution are mentioned in the detailed description above, this division is not mandatory. In fact, according to the embodiments of the present disclosure, the features and functions of two or more modules or units described above can be concretized in one module or unit. Conversely, the features and functions of one module or unit described above can be further divided into multiple modules or units to be concretized.
[0114] Through the description of the above embodiments, it is easy for those skilled in the art to understand that the example embodiments described herein can be implemented by software or by combining software with necessary hardware. Therefore, the technical solution according to the embodiments of the present disclosure can be embodied in the form of a software product, which can be stored in a non-volatile storage medium (which can be a CD-ROM, a USB flash drive, a mobile hard disk, etc.) or on a network, and includes several instructions to enable a computing device (which can be a personal computer, a server, a touch terminal, or a network device, etc.) to execute the method according to the embodiments of the present disclosure.
[0115] Other embodiments of the present disclosure will readily occur to those skilled in the art after considering the specification and practicing the invention disclosed herein. This disclosure is intended to cover any variations, uses, or adaptations of the present disclosure that follow the general principles of the present disclosure and include common knowledge or customary techniques in the art not disclosed herein.
[0116] The above is only a specific implementation of the present invention, but the design concept of the present invention is not limited to this. Any non-substantial changes to the present invention using this concept shall be deemed as an infringement of the protection scope of the present invention.
Claims
1. A de-embedding measurement method for electrical parameters of passive devices, characterized in that: The steps include: Constructing an original test circuit including a passive device to be tested, an open-circuit test circuit obtained by removing the passive device to be tested from the original test circuit, and a short-circuit test circuit obtained by short-circuiting an open circuit of the open-circuit test circuit; Measuring the S parameters of the original test circuit, the open circuit test circuit, and the short circuit test circuit respectively to obtain an S parameter matrix and performing parameter conversion to obtain a corresponding Y parameter matrix; Calculating the admittance parameter of the passive device to be tested to ground and the impedance parameter of the passive device to be tested after parameter stripping according to the Y parameter matrix, and calculating the Y parameter matrix of the passive device to be tested after de-embedding according to the admittance parameter of the passive device to ground and the impedance parameter; The Y parameter matrix of the passive device to be tested is parameter-converted to obtain a corresponding S parameter matrix, and the required electrical parameters of the passive device to be tested are extracted through the S parameter matrix of the passive device to be tested.
2. The de-embedding measurement method for electrical parameters of a passive device according to claim 1, wherein: The S parameter matrix is converted into the corresponding Y parameter matrix using the following formula: Among them, Z0 is the characteristic impedance, Y 11 、Y 12 、Y 21 、Y 22 are the input admittance of the Y parameter matrix, the transfer admittance when the input port is short-circuited, the transfer admittance when the output port is short-circuited, and the output admittance; and S 11 、S 12 、S 21 、S 22 are the input reflection coefficient, reverse transmission coefficient, forward transmission coefficient and output reflection coefficient of the S parameter matrix respectively.
3. The de-embedding measurement method for electrical parameters of a passive device according to claim 1, wherein: Calculate the impedance parameter Z of the passive device to be tested after parameter stripping according to the Y parameter matrix corresponding to the original test circuit and the open circuit test circuit dut : Among them, Y raw (1,2) is the transfer admittance of the Y parameter matrix of the original test circuit when the input port is short-circuited; Y open (1,2) is the transfer admittance of the Y parameter matrix of the open circuit test circuit when the input port is short-circuited; Z ro It is the sum of the series resistance and series inductance caused by the input port, output port and metal connection wires of the test circuit, and a is the short-circuit coefficient.
4. The de-embedding measurement method for electrical parameters of a passive device according to claim 3, wherein: The sum Z of the series resistance and series inductance caused by the input port, the output port and the metal transmission line of the test circuit ro The calculation is as follows: Among them, Y thru (1,2) is the transfer admittance of the Y parameter matrix of the short-circuit test circuit when the input port is short-circuited, Y open (1,2) is the transfer admittance of the Y parameter matrix of the open circuit test circuit when the input port is short-circuited.
5. The de-embedding measurement method for electrical parameters of a passive device according to claim 1, wherein: Calculate the admittance parameter Y of the passive device to be tested to ground according to the Y parameter matrix of the short-circuit test circuit s1 and Y s2 : AND s1 =And thru (1,1)+Y thru (1,2) Among them, Y thru (1,1) is the input admittance of the Y parameter matrix of the short-circuit test circuit, Y thru (1,2) is the transfer admittance of the Y parameter matrix of the short-circuit test circuit when the input port is short-circuited. AND s2 =And thru (2,2)+Y thru (2.1) Among them, Y thru (2,2) is the output admittance of the Y parameter matrix of the short-circuit test circuit, Y thru (2,1) is the transfer admittance of the output port of the Y parameter matrix of the short-circuit test circuit when it is short-circuited.
6. The de-embedding measurement method for electrical parameters of a passive device according to claim 1, wherein: The Y parameter matrix of the passive device under test after de-embedding is calculated according to the admittance parameter of the passive device under test to ground and the impedance parameter: Among them, Y s1 、Y s2 are the admittance parameters of the passive device to be tested to the ground, Z dut The impedance parameters of the passive device to be tested after parameter stripping.
7. The de-embedding measurement method for electrical parameters of a passive device according to claim 1, wherein: The passive device to be tested is a resistor, an inductor, a capacitor or a filter.
8. A de-embedding measurement system for electrical parameters of passive devices, characterized in that: include a test circuit construction module, configured to construct an original test circuit comprising a passive device to be tested, an open-circuit test circuit obtained by removing the passive device to be tested from the original test circuit, and a short-circuit test circuit obtained by short-circuiting an open circuit of the open-circuit test circuit; A parameter measurement module is used to measure the S parameters of the original test circuit, the open circuit test circuit and the short circuit test circuit respectively, and convert the S parameter matrix into a corresponding Y parameter matrix; a de-embedding processing module, configured to calculate the admittance parameters of the passive device to be tested to the ground and the impedance parameters of the passive device to be tested after stripping according to the Y parameter matrix, and calculate the Y parameter matrix of the passive device to be tested after de-embedding according to the admittance parameters and impedance parameters of the passive device to be tested to the ground; The parameter conversion module is used to convert the Y parameter matrix of the passive device to be tested into the corresponding S parameter matrix, and extract the electrical parameters of the passive device through the S parameter matrix.