Optical phased array device of integrated on-chip light amplification module

Abstract

The invention discloses an optical phased array device of an integrated on-chip light amplification module. The device comprises a tunable laser, an end face coupler, a silicon nitride cascade beam splitter network, the on-chip light amplification module, a phase shifter array, a waveguide array, a grating antenna array, a phase shift signal power supply, a digital signal generator and the like. The device solves the problem of detection distance caused by lower transmitting power in the existing on-chip optical phased array scheme, and solves the problem of expanded array scale of the optical phased array. The design scheme that the on-chip light amplification module is integrated between the cascaded beam splitters of the optical phased array device is adopted, the transmitting power of the on-chip optical phased array device can be greatly improved, and long-distance detection of the laser radar system based on the optical phased array is achieved.

Description

Technical Field

[0001] The present invention belongs to the field of integrated photonics and optical phased array technology. Specifically, it is an optical phased array (OPA) device with an integrated on-chip light amplification module. The device is suitable for beam scanning and long-distance detection in laser radar (LiDAR) systems. It is particularly suitable for application scenarios in fields such as autonomous driving, remote sensing mapping, meteorological monitoring, and national defense security, which have strict requirements for high-power, long-distance, and high-precision beam control. Background Art

[0002] With the rapid evolution of autonomous driving technology and its widespread adoption in fields such as intelligent manufacturing, meteorological observation, geographic mapping, and national defense, optical remote sensing systems, represented by LiDAR (LiDAR), have become a key research topic for researchers. The optical phased array (OPA), a core component of LiDAR systems, has become a key technology for high-precision 3D imaging and spatial scanning. Optical phased arrays offer advantages such as a lack of mechanical components, fast response speed, and structural integration, making them suitable for beam manipulation in a variety of complex environments. Their applications span a wide range of critical areas, including communications, traffic safety, airspace awareness, and military navigation.

[0003] Different use cases place diverse technical demands on OPAs, including a larger scanning field of view (FOV), higher angular resolution, longer detection distance, and faster response speed. Currently, to achieve longitudinal scanning, the mainstream design solution is based on a wavelength tuning mechanism, which is relatively mature in terms of structure and control methods. However, there is a physical upper limit to the optical power carried by optical phased array devices on silicon substrates, which to some extent limits their performance in long-distance detection scenarios. Therefore, the development of new OPA technologies with high power output, long-range recognition capabilities, and high scanning accuracy has become an urgent need.

[0004] At the technical level, expanding two-dimensional beam steering capabilities is currently a major trend in optical phased array research. A more feasible approach is to achieve two-dimensional scanning through wavelength tuning based on a one-dimensional grating array, rather than directly using a two-dimensional antenna array, which is more difficult to integrate and is still in the experimental stage. This approach typically includes a wavelength-tunable laser source, a multimode interference (MMI) beam-splitting network, an electro-optical or thermo-optical phase shifter, and a periodic grating antenna array. By controlling the laser wavelength, the beam can be precisely steered in two dimensions. The grating's diffraction properties for lasers of different wavelengths enable controlled angular deflection [Christopher V. Poulton, Ami Yaacobi, David B. Cole, Matthew J. Byrd, Manan Raval, Diedrik Vermeulen, and Michael R. Watts, "Coherent solid-state LIDAR with silicon photonic optical phased arrays," Opt. Lett. 42, 4091-4094 (2017)].

[0005] In recent years, researchers have introduced non-uniformly spaced grating designs and multi-wire antenna structures to expand the scanning field of view. This not only increases the longitudinal scanning range but also improves the angular resolution during long-range detection. In particular, guided by the auxiliary lens mechanism, the OPA scanning range and accuracy are adjustable, providing a technical foundation for long-range, high-resolution detection. For example, by integrating an OPA system with thousands of grating channels, a large field of view scanning range of approximately 100°×17° and an angular resolution of sub-milliradians have been achieved [CV Poulton et al., "Coherent LiDAR With an 8,192-Element OpticalPhased Array and Driving Laser," in IEEE Journal of Selected Topics inQuantum Electronics, vol. 28, no. 5: Lidars and Photonic Radars, pp. 1-8, Sept.-Oct. 2022, Art no. 6100508, doi: 10.1109 / JSTQE.2022.3187707.].

[0006] On the other hand, by designing a multi-line array and a variable period grating structure, the longitudinal scanning angle of the OPA system can be further expanded [Zhang Lanxuan. Research on optical phased array technology of silicon-based optoelectronic integrated all-solid-state lidar [D]. Jilin University, 2023. DOI: 10.27162 / d.cnki.gjlin.2022.000344.].

[0007] However, most current research focuses on scanning angles and integration density, while attention to improving detection distance and transmission power, the key factors affecting lidar performance, is still relatively limited. Because silicon-based waveguides are prone to nonlinear effects when operating at high power, thereby reducing the quality of optical signals, existing OPA systems generally have power limitations. To overcome this limitation, researchers have gradually turned to using silicon nitride (SiN) materials to replace silicon-based waveguide structures. SiN has a higher laser damage threshold and lower nonlinear coefficient, making it suitable for long-distance imaging and precise scanning in high-power OPA systems [Lanxuan Zhang, Yingzhi Li et al., "Two-dimensional multi-layered SiN-on-SOI optical phased array with wide-scanning and long-distance ranging," Opt. Express 30, 5008-5018 (2022)].

[0008] Although SiN-based optical phased array devices can achieve transmission powers in the hundreds of milliwatts, this still falls far short of the practical requirements for long-range, high-resolution detection systems. Therefore, future research will require systematic innovations in higher-power-carrying materials, low-loss structural designs, and efficient thermal management strategies to advance the practical application of optical phased array technology in long-range lidar. Summary of the Invention

[0009] The present invention aims to overcome the defects of existing optical phased array (OPA) devices, such as low transmission power and limited detection distance, and to provide an optical phased array device with an integrated on-chip optical amplifier module. By integrating the optical amplifier module on-chip into the optical phased array device, the present invention realizes long-distance, high-precision laser detection and scanning.

[0010] The present invention is achieved through the following technical solutions: An optical phased array device integrating an on-chip optical amplification module is characterized by comprising: Narrow linewidth wavelength tunable laser; A silicon nitride end coupler, the input end of which is connected to the output end of the narrow linewidth wavelength tunable laser via an optical fiber; a cascaded silicon nitride beam splitter network, the input end of which is connected to the output port of the silicon nitride end coupler, for splitting an input single laser beam into multiple coherent beams; a silicon nitride waveguide array, whose input end is connected to the multiple output ends of the cascaded silicon nitride beam splitter network in a one-to-one correspondence, for transmitting the multi-path coherent light; a first rare earth ion doped silicon nitride optical amplifier module, the input end of which is connected to the output end of the silicon nitride waveguide array, for simultaneously amplifying the power of multiple coherent lights; a silicon nitride-silicon interlayer coupler, the input end of which is connected to the output end of the first rare earth ion-doped silicon nitride optical amplifier module, for vertically coupling the amplified multi-path optical signals from the silicon nitride waveguide layer to the silicon waveguide layer; a silicon waveguide array, the input end of which is connected to the output end of the silicon nitride-silicon interlayer coupler; a thermo-optical phase shifter array, wherein each thermo-optical phase shifter unit is arranged in parallel and adjacent to each silicon waveguide in the silicon waveguide array, and is used to independently phase modulate the laser light of the corresponding channel; a silicon-silicon nitride interlayer coupler, the input end of which is connected to the output end of the silicon waveguide array, and is used to vertically couple the phase-modulated multi-path optical signals from the silicon waveguide layer back to the silicon nitride waveguide layer; A silicon nitride grating antenna array, the input end of which is connected to the output end of the silicon-silicon nitride interlayer coupler, wherein the plurality of grating antenna units are used to radiate phase-modulated multi-path lasers into free space and coherently combine the directional emission beams; A digital signal generator, used for generating a preset phase control digital signal; a digital-to-analog converter array, the input end of which is connected to the output end of the digital signal generator, for converting the phase-controlled digital signal into a multi-channel analog voltage signal; A phase-shift signal power supply, whose control end is connected to the output end of the digital-to-analog converter array and whose output end is connected to the electrodes of the thermo-optical phase shifter array, is used to generate and provide an independently adjustable voltage or current required to drive the thermo-optical phase shifter array according to the analog voltage signal.

[0011] Furthermore, it also includes at least one second rare earth ion doped silicon nitride optical amplifier module, the input end of the second rare earth ion doped silicon nitride optical amplifier module is connected to the output end of the upper stage beam splitter in the cascaded silicon nitride beam splitter network, and the output end is connected to the input end of the next stage beam splitter in the cascaded silicon nitride beam splitter network, and is used to perform intermediate-stage power amplification on the optical signal during the splitting process to overcome the splitting loss.

[0012] Furthermore, it also includes: an external detector for receiving the light beam emitted by the silicon nitride grating antenna array and detecting its wavefront phase distribution or far-field spot characteristics; The feedback signal input end of the digital signal generator is connected to the output end of the external detector for receiving a feedback signal representing a phase mismatch. The digital signal generator is configured to dynamically adjust the phase control digital signal output to the digital-to-analog converter array based on the feedback signal, and then control the thermo-optical phase shifter array through the phase shift signal power supply to perform real-time compensation and correction on the phase of each channel to eliminate phase mismatch introduced by manufacturing errors, temperature drift or interlayer coupling.

[0013] Furthermore, the operating wavelength of the narrow linewidth wavelength tunable laser is between 1450 nm and 1650 nm.

[0014] Furthermore, the cascaded silicon nitride beam splitter network is composed of a plurality of 1x2 multimode interference beam splitters cascaded.

[0015] Furthermore, the grating antennas in the silicon nitride grating antenna array adopt a non-uniform periodic distribution or non-uniform arrangement structure, so as to expand the scanning viewing angle or improve the angular resolution.

[0016] Furthermore, the first rare earth ion doped silicon nitride optical amplifier module and / or the second rare earth ion doped silicon nitride optical amplifier module is an erbium-doped silicon nitride waveguide amplifier and is configured with an independent pump light input port.

[0017] Furthermore, the thermo-optical phase shifter array is made of titanium nitride (TiN) material.

[0018] Compared with the prior art, the technical effects of the present invention are as follows: 1) The present invention can improve the laser emission power and ranging detection distance of an on-chip integrated optical phased array device, increasing the laser emission power to the order of 1W and the detection distance to the order of 1km, thus enabling ranging of targets at a distance of one kilometer.

[0019] 2) By integrating the optical amplifier module on the chip after the cascaded silicon nitride optical power splitter network, the limitation of the power tolerance of the optical phased array chip input port on the transmission power of the entire optical phased array device can be reduced, the transmission power of the optical phased array antenna can be increased, the detection range of the lidar can be improved, and the scale of the optical phased array array can be further increased.

[0020] 3) Using a thermo-optical phase shifter with a phase shift capability exceeding 2π, the optical phased array transmit beam is tested using a preset phase-shifted electrical signal. This test detects phase mismatches caused by the manufacturing process and by the optical fiber connection between the cascaded silica beam splitter network chip and the phased scanning antenna chip. Based on the detected phase mismatch, a thermo-optical phase shifter with a phase shift capability exceeding 2π is used to compensate for the phase-shifted voltage signal corresponding to each optical phased array beam emission angle. This enables high-precision laser beam emission from a high-power multi-chip collaborative optical phased array, enabling high-precision detection of long-range targets. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 This is a structural block diagram of embodiment 1 of the optical phased array device with integrated on-chip optical amplification module of the present invention.

[0022] Figure 2 This is a structural block diagram of embodiment 2 of the optical phased array device with an integrated on-chip optical amplification module of the present invention. DETAILED DESCRIPTION

[0023] The following is a detailed description of an embodiment of the present invention. This embodiment is implemented based on the technical solution of the present invention, and provides a detailed implementation method and specific operation process. However, the protection scope of the present invention is not limited to the following embodiment.

[0024] Example 1 First, please refer to Figure 1 , Figure 1 This is a block diagram of the overall structure of an embodiment of an optical phased array device integrated with an on-chip optical amplifier module according to the present invention. As shown in the figure, this embodiment provides a basic form of an optical phased array device integrated with an on-chip optical amplifier module. First, a composite substrate is provided, on which a silicon nitride (SiN) waveguide layer and a silicon (Si) waveguide layer are integrated, separated by a silicon dioxide (SiO2) cladding layer. Functional components are fabricated on this substrate using well-established micro-nanofabrication techniques (such as photolithography, etching, and thin-film deposition).

[0025] The specific structure and connection relationship of this embodiment are as follows: The output port of a narrow-linewidth wavelength-tunable laser 1 operating at a wavelength of approximately 1550nm is aligned and fixedly connected to the input port of a silicon nitride end-face coupler 2 fabricated on the edge of the chip via a single-mode optical fiber. The output port of the silicon nitride end-face coupler 2 is directly connected to the input port of a cascaded silicon nitride beam splitter network 3 via a silicon nitride waveguide. The cascaded silicon nitride beam splitter network 3 is composed of N = 10 1 × 2 multi-mode interference (MMI) beam splitters cascaded together, thereby splitting the input single laser beam into M = 2 ^10 = 1024 channels of coherent light. The 1024 output ports of the cascaded silicon nitride beam splitter network 3 are connected one-to-one to the 1024 input channels of the first rare-earth ion-doped silicon nitride optical amplifier module 5 via the silicon nitride waveguide array 4. This rare-earth ion-doped silicon nitride optical amplifier module 5 integrates a pump light combiner (not shown) for coupling 980 nm or 1480 nm pump laser light into the waveguide, thereby amplifying the 1550 nm signal light. After amplification, the output optical power per channel can be increased from the microwatt level after beam splitting to the milliwatt level.

[0026] The 1024 output ports of the first rare earth ion doped silicon nitride optical amplifier module 5 are connected to the input port array of the silicon nitride-silicon interlayer coupler 6 through the silicon nitride waveguide. The silicon nitride-silicon interlayer coupler 6 uses an adiabatic tapered coupler or grating coupler structure to efficiently and vertically couple the optical signal in the silicon nitride waveguide layer to the silicon waveguide layer below it. The input port of the silicon waveguide array 7 is connected to the output port array of the silicon nitride-silicon interlayer coupler 6 on the silicon layer. The TiN thermo-optical phase shifter array 8 is arranged in parallel with the silicon waveguide array 7. Each TiN heating electrode unit is separated from the corresponding silicon waveguide by a silicon dioxide upper cladding layer by 500 nm, and phase modulates the light transmitted in the silicon waveguide through the thermo-optical effect. Each phase shifter unit can provide a phase shift of more than 2π, and its response time is on the order of milliseconds.

[0027] The output port of the silicon waveguide array 7 is connected to the input port of the silicon-silicon nitride interlayer coupler 9, which vertically couples the optical signal in the silicon waveguide layer back to the silicon nitride waveguide layer above. The input end of the silicon nitride grating antenna array 10 is connected to the output port array of the silicon-silicon nitride interlayer coupler 9 in the silicon nitride layer. Each grating antenna unit adopts a uniform blazed grating design with a period of 630 nm, a duty cycle of 50%, and a length of 20 μm. It is used to radiate the guided mode light into free space and form the main lobe of the interference beam. The grating antenna array 10 is the final laser emission end of the device.

[0028] In terms of electronic control, the output port of a digital signal generator 11 (such as an FPGA or DAC board) is connected to the input port of a digital-to-analog converter array 12 via a multi-channel cable. This digital-to-analog converter array 12 contains 1024 channels, and its output port is connected to the control port of a multi-channel phase-shift signal power supply 13. The 1024 voltage output ports of this phase-shift signal power supply 13 are connected to the 1024 independent heating electrodes of the TiN thermo-optical phase shifter array 8 via wire bonding, providing a precise modulation voltage between 0 and 10V, thereby controlling the phase of each channel.

[0029] The longitudinal scanning of the emitted light is achieved by utilizing the mechanism that the grating antenna has different diffraction capabilities for lasers of different wavelengths, and the lateral scanning of the emitted light is achieved by utilizing the TiN thermo-optical phase shifter array 8 and the phase shift signal configuration device. By integrating the optical amplification module on-chip into the cascaded silicon nitride beam splitter network 3, the optical power is amplified, thereby achieving an increase in the optical phased array transmission power and an improvement in the detection range of the laser radar based on the optical phased array device.

[0030] The basic principle of this device is as follows: The narrow-linewidth wavelength tunable laser 1 emits narrow-linewidth laser light, which is coupled to the silicon nitride end coupler 2 via an optical fiber to couple the optical power onto the chip. A single laser beam is input to the cascaded silicon nitride beam splitter network 3, and is evenly divided into two by the N-stage cascaded 1×2 silicon dioxide MMI beam splitter network. N Channel coherent light.

[0031] Divided into 2 via N-stage cascaded 1×2 silica MMI beam splitter network N The coherent light of the channel is transmitted through the silicon nitride waveguide array 4 to the rare earth ion doped silicon nitride optical amplifier module 5 integrated on the chip, and the signal light of the working wavelength is amplified by pump light to achieve on-chip optical power amplification.

[0032] The laser light that has completed optical power amplification by the rare earth ion doped silicon nitride optical amplifier module 5 is transmitted to the silicon waveguide array 7 via the silicon nitride-silicon interlayer coupler 6 , and then phase shifted by the TiN thermo-optical phase shifter array 8 .

[0033] The digital signal generator 11 sends a phase shift configuration signal to the digital-to-analog converter array 12. The digital-to-analog converter array 12 receives the phase shift configuration digital signal and converts it into an analog signal, which is used to control the phase shift signal power supply 13 to send a phase shift voltage signal to the TiN thermo-optical phase shifter network 8. After receiving the voltage signal, the TiN thermo-optical phase shifter network 8 completes the phase shift of each channel laser. After phase shifting, the laser in the silicon waveguide array 7 is coupled to the silicon nitride grating antenna array 10 through the silicon-silicon nitride interlayer coupler 9. The silicon nitride grating antenna array 10 emits the phase-shifted laser of each channel into space. The emitted laser forms a beam by spatial interference, and the beam emission power is on the order of ~1W. Through the digital signal generator 11, the digital-to-analog converter array 12, and the TiN thermo-optical phase shifter array 8, horizontal scanning is completed according to the predetermined data.

[0034] After completing a single round of lateral scanning, the wavelength of the input laser is adjusted step by step through the wavelength tunable laser 1, and the lateral scanning is repeated until the entire wavelength tuning range is covered, completing the full range two-dimensional scanning.

[0035] Example 2 Based on Example 1, this embodiment is further optimized to improve performance. The improved structure is as follows: Figure 2 shown.

[0036] To overcome the insertion loss introduced by the cascaded beam splitter network 3, a second rare-earth ion-doped silicon nitride optical amplifier module 14 is integrated after the fifth-stage beam splitter of the cascaded silicon nitride beam splitter network 3. Its structure is identical to that of the first optical amplifier module 5. Specifically, the two output ports of the fifth-stage 1×2 MMI beam splitter are connected to the inputs of two second optical amplifier modules 14, respectively. The output of each second optical amplifier module 14 is then connected to the two inputs of the subsequent sixth-stage beam splitter network. This allows for relay amplification of the attenuated optical power during the optical splitting process, ensuring that each optical path transmitted to the end still has sufficient power, laying the foundation for ultimately achieving a total transmit power in the watt range (~1W).

[0037] In addition, this embodiment introduces a closed-loop feedback control system. An infrared camera or a four-quadrant detector is placed in front of the device as an external phase detector (not shown in the figure) to monitor the intensity distribution and position of the far-field laser spot emitted by the silicon nitride grating antenna array 10 in real time.

[0038] The detector's output is connected to a feedback input port of a digital signal generator 11. Digital signal generator 11 stores the theoretical phase values ​​(φ1, φ2, ..., φ1024) required for ideal beam pointing for each channel. During operation, generator 11 first converts these theoretical values ​​into voltage output signals to control beam emission. Simultaneously, it receives actual beam spot information from the detector and calculates the mismatch (Δφ1, Δφ2, ..., Δφ1024) between the actual phase and the theoretical value using a built-in algorithm (such as a hill climbing method or genetic algorithm).

[0039] Subsequently, the digital signal generator 11 dynamically adjusts its output signal and sends the corrected phase control signals (φ1+Δφ1, φ2+Δφ2, ..., φ1024+Δφ1024) to the digital-to-analog converter array 12 and the phase-shift signal power supply 13. Ultimately, this drives the TiN thermo-optical phase shifter array 8 to accurately compensate the phase of each channel in real time. This process effectively corrects for phase errors caused by manufacturing tolerances, inconsistencies in inter-chip coupling losses, and ambient temperature fluctuations, thereby achieving high-precision beam steering and stable far-field spot quality, ensuring excellent signal-to-noise ratio and angular resolution at kilometer-level detection distances.

[0040] Based on the above embodiments, those skilled in the art may make various substitutions and modifications, for example: The narrow-linewidth wavelength tunable laser 1 can be replaced with a tunable laser source of other wavelength bands (such as 1310 nm or visible light band). Accordingly, the doping ions (such as neodymium, ytterbium, etc.) and pump wavelength of the optical amplification module also need to be adjusted.

[0041] The number N of the cascaded silicon nitride beam splitter network 3 can be increased or decreased as needed to achieve arrays of different sizes, such as 16, 256, and 4096.

[0042] The TiN thermo-optical phase shifter array 8 can be replaced by a thermo-optical phase shifter based on other resistive materials (such as tungsten or polysilicon), or by a silicon-based electro-optical phase shifter based on carrier dispersion effect (such as a PN junction phase shifter), provided that a sufficient phase shift range and response speed can be provided.

[0043] The silicon nitride grating antenna array 10 can be designed with a nonlinear chirp period or a non-uniform spacing arrangement to further expand the scanning viewing angle or suppress side lobes.

[0044] The digital signal generator 11 and the digital-to-analog converter array 12 can be integrated on a dedicated control circuit board, or even packaged together with the photonic chip through monolithic integration technology to reduce the size and increase the control speed.

[0045] It should be understood that the above description is only a specific example of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. An optical phased array device integrating an on-chip optical amplification module, characterized in that: include: Narrow linewidth wavelength tunable laser (1); A silicon nitride end face coupler (2), the input end of which is connected to the output end of the narrow linewidth wavelength tunable laser (1) via an optical fiber; A cascaded silicon nitride beam splitter network (3), the input end of which is connected to the output port of the silicon nitride end face coupler (2), and is used to split the input single laser beam into multiple coherent lights; A silicon nitride waveguide array (4), the input end of which is connected to the multiple output ends of the cascaded silicon nitride beam splitter network (3) in a one-to-one correspondence, for transmitting the multi-path coherent light; A first rare earth ion doped silicon nitride optical amplifier module (5), the input end of which is connected to the output end of the silicon nitride waveguide array (4), and is used for simultaneously amplifying the power of multiple coherent lights; A silicon nitride-silicon interlayer coupler (6), the input end of which is connected to the output end of the first rare earth ion-doped silicon nitride optical amplifier module (5), and is used for vertically coupling the amplified multi-path optical signals from the silicon nitride waveguide layer to the silicon waveguide layer; A silicon waveguide array (7), the input end of which is connected to the output end of the silicon nitride-silicon interlayer coupler (6); A thermo-optical phase shifter array (8), wherein each thermo-optical phase shift unit is arranged in parallel and adjacent to each silicon waveguide in the silicon waveguide array (7), and is used to independently phase modulate the laser light of the corresponding channel; A silicon-silicon nitride interlayer coupler (9), the input end of which is connected to the output end of the silicon waveguide array (7), and is used to vertically couple the phase-modulated multi-path optical signals from the silicon waveguide layer back to the silicon nitride waveguide layer; A silicon nitride grating antenna array (10), the input end of which is connected to the output end of the silicon-silicon nitride interlayer coupler (9), wherein the plurality of grating antenna units are used to radiate phase-modulated multi-path lasers into free space and coherently combine the directional emission beams; A digital signal generator (11) is used to generate a preset phase control digital signal; a digital-to-analog converter array (12), the input end of which is connected to the output end of the digital signal generator (11), and is used to convert the phase-controlled digital signal into a multi-channel analog voltage signal; A phase shift signal power supply (13), whose control end is connected to the output end of the digital-to-analog converter array (12), and whose output end is connected to the electrode of the thermo-optical phase shifter array (8), is used to generate and provide an independently controllable voltage or current required to drive the thermo-optical phase shifter array (8) according to the analog voltage signal.

2. The optical phased array device of the integrated on-chip optical amplifier module according to claim 1, characterized in that: The invention also includes at least one second rare earth ion doped silicon nitride optical amplifier module, wherein the input end of the second rare earth ion doped silicon nitride optical amplifier module is connected to the output end of the upper beam splitter in the cascaded silicon nitride beam splitter network (3), and the output end thereof is connected to the input end of the lower beam splitter in the cascaded silicon nitride beam splitter network (3), and is used for performing intermediate power amplification on the optical signal during the beam splitting process to overcome the beam splitting loss.

3. The optical phased array device of the integrated on-chip optical amplifier module according to claim 1 or 2, characterized in that: Also includes: An external detector, used for receiving the light beam emitted by the silicon nitride grating antenna array (10) and detecting its wavefront phase distribution or far-field light spot characteristics; The feedback signal input end of the digital signal generator (11) is connected to the output end of the external detector for receiving a feedback signal representing a phase mismatch; the digital signal generator (11) is configured to dynamically adjust the phase control digital signal output to the digital-to-analog converter array (12) based on the feedback signal, and then control the thermo-optical phase shifter array (8) through the phase shift signal power supply (13) to perform real-time compensation and correction on the phase of each channel to eliminate the phase mismatch introduced by manufacturing errors, temperature drift or interlayer coupling.

4. The optical phased array device of the integrated on-chip optical amplifier module according to claim 1 or 2, characterized in that: The narrow linewidth wavelength tunable laser (1) has an operating wavelength of 1450 nm to 1650 nm.

5. The optical phased array device of the integrated on-chip optical amplifier module according to claim 1, characterized in that: The cascaded silicon nitride beam splitter network (3) is composed of a plurality of 1x2 multimode interference beam splitters cascaded.

6. The optical phased array device of the integrated on-chip optical amplifier module according to claim 1, characterized in that: The grating antennas in the silicon nitride grating antenna array (10) adopt a non-uniform periodic distribution or non-uniform arrangement structure, and are used to expand the scanning viewing angle or improve the angular resolution.

7. The optical phased array device of the integrated on-chip optical amplifier module according to claim 2, characterized in that: The first rare earth ion doped silicon nitride optical amplifier module (5) and / or the second rare earth ion doped silicon nitride optical amplifier module are erbium-doped silicon nitride waveguide amplifiers and are configured with independent pump light input ports.

8. The optical phased array device of the integrated on-chip optical amplifier module according to claim 1, characterized in that: The thermo-optical phase shifter array is made of titanium nitride (TiN) material.

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