Methods, apparatus, computer equipment, and structure of map graphics for modification

Abstract

This application relates to a method, apparatus, computer device, and layout pattern structure for correcting a layout pattern. The method includes obtaining a first target pattern with the critical dimension of a target hole as its diameter, the center of the first target pattern coinciding with the center of the target hole; setting multiple straight lines passing through the center of the first target pattern, the intersection points of these lines with the first target pattern being first evaluation points; setting a rectangular pattern at each first evaluation point, the target edge of the rectangular pattern being tangent to the first target pattern at the first evaluation point; obtaining a second target pattern based on the multiple rectangular patterns; performing simulated exposure based on the second target pattern to obtain an exposed pattern; obtaining the roundness of the exposed pattern; and adjusting the size of the rectangular patterns according to the roundness to obtain the corrected layout pattern. This correction method can improve the shape of vias formed based on the corrected layout pattern, mitigating the problem of misalignment between vias and the preceding layer structure.

Description

Technical Field

[0001] This application relates to the field of layout design technology, and in particular to a method, apparatus, computer device, and layout graphic structure for modifying layout graphics. Background Technology

[0002] With the development of semiconductor technology, before fabricating a photomask based on a layout, optical proximity correction (OPC) is typically performed on the layout pattern. Afterward, lithography rule check (LRC) is required to check if the layout pattern still does not meet the preset specifications after OPC correction. Specifically, LRC-based checking mainly detects whether the critical dimensions of the layout pattern along the X and Y directions meet the requirements.

[0003] In reality, the shape of vias formed by photomask exposure based on the layout pattern is affected by the surrounding environment, and the shape of the vias cannot be accurately reflected by critical dimensions. Even if the critical dimensions of the vias in the X and Y directions meet the requirements, their shape may not be circular; it could be elliptical. This can lead to misalignment risks between the vias in the current layer and the preceding layer structure. If the connection between the vias in the current layer and the preceding layer structure is not tight, it will affect the performance of the product. Summary of the Invention

[0004] Therefore, it is necessary to provide a method, apparatus, computer device, and layout graphic structure for correcting the above-mentioned problems.

[0005] Firstly, this application provides a method for correcting a layout graphic, comprising:

[0006] Using the critical dimension of the target hole as the diameter, a first target pattern is obtained, and the center of the first target pattern coincides with the center of the target hole;

[0007] Multiple straight lines are set to pass through the center of the first target graphic, and the intersection of the multiple straight lines with the first target graphic is the first evaluation point;

[0008] A rectangular shape is set at each of the first evaluation points, and the target side of the rectangular shape is tangent to the first target shape at the first evaluation point;

[0009] A second target graphic is obtained based on multiple rectangular graphics;

[0010] Simulated exposure is performed based on the second target image to obtain the exposed image;

[0011] Obtain the roundness of the exposed pattern;

[0012] Adjust the size of the rectangular graphic according to the roundness to obtain the corrected layout graphic.

[0013] In one embodiment, obtaining the roundness of the exposed pattern includes:

[0014] Obtain the light intensity distribution curve of the exposure pattern in each of the straight line directions;

[0015] The simulated exposure size of the exposure pattern in each of the straight lines is determined based on the light intensity distribution curve and the imaging threshold.

[0016] The roundness of the exposure pattern is determined based on the minimum and maximum critical dimensions among the multiple simulated exposure dimensions.

[0017] In one embodiment, adjusting the size of the rectangular shape according to the roundness to obtain the corrected second target shape includes:

[0018] If the roundness is greater than a preset value, adjust the size of the rectangular graphic located in the target straight line direction until the roundness is less than or equal to the preset value to obtain the corrected second target graphic; wherein, the target straight line direction is the direction of the straight line corresponding to the minimum critical dimension or the maximum critical dimension.

[0019] In one embodiment, adjusting the size of the rectangular shape located in the target straight line direction when the roundness is greater than a preset value includes:

[0020] A second evaluation point is determined on the exposure pattern, wherein the second evaluation point is the intersection of the plurality of straight lines and the exposure pattern;

[0021] The size of the rectangular graphic is adjusted according to the positional relationship between the second evaluation point and the corresponding first evaluation point along the target straight line.

[0022] In one embodiment, before performing simulated exposure based on the second target pattern to obtain an exposed pattern, the method further includes:

[0023] The second target image is subjected to optical proximity correction processing.

[0024] In one embodiment, the number of lines is greater than or equal to 3.

[0025] In one embodiment, the initial size of the plurality of rectangular shapes is the same.

[0026] Secondly, this application provides a layout graphic correction device, comprising:

[0027] The target image acquisition module is used to obtain a first target image with the critical size of the target hole as the diameter, wherein the center of the first target image coincides with the center of the target hole; to set multiple straight lines passing through the center of the first target image, wherein the intersection of the multiple straight lines with the first target image is a first evaluation point; to set a rectangular image at each first evaluation point, wherein the target side of the rectangular image is tangent to the first target image at the first evaluation point; and to obtain a second target image based on the multiple rectangular images.

[0028] The simulated exposure module is used to perform simulated exposure based on the second target image to obtain an exposed image;

[0029] A roundness acquisition module is used to acquire the roundness of the exposed pattern;

[0030] The correction module is used to adjust the size of the rectangular graphic according to the roundness to obtain the corrected layout graphic.

[0031] Thirdly, this application provides a computer device including a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to implement the steps of the method provided in any of the above embodiments.

[0032] Fourthly, this application provides a layout graphic structure, including a layout graphic obtained by the layout graphic correction method provided in any of the above embodiments.

[0033] An unexpected effect of this application is that, by using the critical dimension of the target hole as the diameter, a first target pattern is obtained whose center coincides with the center of the target hole. Multiple straight lines passing through the center of the first target pattern are set, and the intersection points of these lines with the first target pattern are designated as first evaluation points. A rectangular pattern is set at each first evaluation point, with the target edge of the rectangular pattern tangent to the first target pattern at that point. A second target pattern is obtained based on these rectangular patterns. Further, simulated exposure is performed based on the second target pattern to obtain an exposed pattern. The roundness of the exposed pattern is obtained based on its dimensions. The dimensions of the rectangular patterns are adjusted according to the roundness to obtain a corrected layout pattern. Setting the second target pattern as a shape with a border formed by multiple rectangles allows for precise adjustment of the local dimensions of the second target pattern when adjusting it based on the roundness of the exposed pattern. This improves the adjustment accuracy of the second target pattern, thereby improving the shape of the via formed based on the second target pattern and avoiding the risk of loose alignment between the via and the previous layer structure, thus improving product performance. Attached Figure Description

[0034] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0035] Figure 1 This is a flowchart of a method for correcting layout graphics provided in one embodiment;

[0036] Figure 2 This is a schematic diagram of a first target graphic provided in one embodiment;

[0037] Figure 3 This is a schematic diagram of a rectangular graphic set at the first evaluation point in one embodiment;

[0038] Figure 4 This is a schematic diagram of the second target graphic provided in one embodiment;

[0039] Figure 5 This is a flowchart of step S600 in one embodiment for obtaining the roundness of the exposed pattern;

[0040] Figure 6 This is a light intensity distribution curve in one embodiment;

[0041] Figure 7 This is a schematic diagram illustrating the adjustment of a rectangular graphic in one embodiment;

[0042] Figure 8 This is a schematic diagram of a second target image after optical proximity correction processing in one embodiment.

[0043] Figure 9 This is a schematic diagram of the structure of a layout pattern correction device provided in one embodiment;

[0044] Figure 10 An internal structural diagram of a computer device provided in one embodiment. Detailed Implementation

[0045] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings, which illustrate embodiments of the present application. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of this application will be thorough and complete.

[0046] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0047] When used herein, the singular forms of “a,” “an,” and “the” may also include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprising / including” or “having,” etc., specify the presence of the stated features, wholes, steps, operations, components, parts, or combinations thereof, but do not preclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts, or combinations thereof. Meanwhile, in this specification, the term “and / or” includes any and all combinations of the associated listed items.

[0048] As mentioned in the background section, the LRC check after OPC mainly checks whether the critical dimensions of the layout pattern along the X and Y directions meet the requirements. However, even if the critical dimensions of the vias in the X and Y directions meet the requirements in the photolithographic imaging model obtained based on the corrected layout image, their shape may not be circular, but rather elliptical. This can lead to misalignment risks between the vias in the current layer and the preceding layer structure. If the connection between the vias in the current layer and the preceding layer structure is not tight, it will affect the performance of the product.

[0049] Based on this, such as Figure 1 As shown, this application proposes a method for correcting layout graphics, including steps S100-S700.

[0050] S100, using the critical dimension of the target hole as the diameter, a first target pattern is obtained, with the center of the first target pattern coinciding with the center of the target hole.

[0051] like Figure 2 As shown, the square graphic 100 is the graphic corresponding to the target hole on the initial layout graphic, and the first target graphic 200 is a circle, and the center of the circle coincides with the center of the square graphic 100 and the center of the target hole.

[0052] S200: Set multiple straight lines that pass through the center of the first target graphic. The intersection of these multiple straight lines with the first target graphic is the first evaluation point.

[0053] In this configuration, adjacent lines are at the same angle. For example, the number of lines is greater than or equal to 3.

[0054] For example, if the number of lines is 3, then the 3 lines and Figure 2 The horizontal angles between the lines are 0 degrees, 60 degrees, and 120 degrees, and the angle between adjacent lines is 60 degrees; if there are 4 lines, then the 4 lines and... Figure 2 The included angles in the horizontal direction are 0 degrees, 45 degrees, 90 degrees, and 135 degrees, respectively, and the included angle between adjacent lines is 45 degrees. Each line intersects the first target figure at two points, and the number of the first evaluation points is twice the number of lines.

[0055] S300, a rectangular shape is set at each first evaluation point, and the target side of the rectangular shape is tangent to the first target shape at the first evaluation point.

[0056] like Figure 3 As shown, taking four straight lines as an example, a rectangular shape 310 is set at each first evaluation point, and the number of rectangular shapes 310 is the same as the number of first evaluation points. For example, a tangent line can be drawn to the first target shape 200 based on the first evaluation point, and a portion of the tangent line including the first evaluation point can be taken as the target edge. Rectangular shapes 310 are then expanded into the first target shape 200 based on the target edge. In the rectangular shape 310, the length of the side parallel to the line connecting the first evaluation point and the center of the circle is less than the radius of the first target shape 200. Regarding the determination of the width of the rectangular shape 310 (i.e., the length of the side perpendicular to the line connecting the first evaluation point and the center of the circle), since OPC cannot modify arcs at arbitrary angles, but it is more favorable for horizontal, vertical, and 45-degree corrections, a vertex of adjacent rectangular shapes 310 overlaps.

[0057] S400, obtain the second target graphic based on multiple rectangular graphics.

[0058] like Figure 4 As shown, by connecting the vertices of adjacent rectangular shapes in sequence, the second target shape 300 is obtained.

[0059] The S500 performs simulated exposure based on the second target image to obtain the exposure image.

[0060] S600, obtains the roundness of the exposed image.

[0061] Roundness indicates how closely an exposed pattern approximates a theoretical circle. The roundness of an exposed pattern can be obtained by measuring its radius or diameter from different directions.

[0062] S700 adjusts the size of the rectangular graphic according to the roundness to obtain the corrected layout graphic.

[0063] The size of the rectangular pattern can be adjusted according to the roundness of the exposed pattern, thereby adjusting the second target pattern so that the size and shape of the through hole obtained by exposing according to the adjusted second target pattern are closer to the target hole.

[0064] The initial layout graphic generally includes multiple square shapes. Each square shape in the initial layout graphic can be modified according to steps S100-S400 to obtain multiple second target shapes. Further, the shapes and sizes of the multiple second target shapes are adjusted according to steps S500-S700, and the adjusted multiple second target shapes form the modified layout graphic.

[0065] In this embodiment, a first target pattern 200 is obtained by using the critical size of the target hole as the diameter, with the center of the circle coinciding with the center of the target hole. Multiple straight lines are set through the center of the first target pattern 200, and the intersection of the multiple straight lines with the first target pattern 200 is the first evaluation point. A rectangular pattern 310 is set at each first evaluation point, and the target edge of the rectangular pattern 310 is tangent to the first target pattern 200 at the first evaluation point. A second target pattern 300 is obtained based on the multiple rectangular patterns 310. Further, simulated exposure is performed based on the second target pattern 300 to obtain an exposed pattern. The roundness of the exposed pattern is obtained based on the size of the exposed pattern obtained from the second target pattern. The size of the rectangular pattern is adjusted according to the roundness to obtain the corrected layout pattern. By setting the second target graphic to a shape with a border formed by multiple rectangles, when adjusting the second target graphic based on the roundness of the exposed graphic, the local shape of the second target graphic can be precisely adjusted by adjusting the size of the rectangles (the length of the side parallel to the line connecting the first evaluation point and the center of the circle). This improves the adjustment accuracy of the second target graphic, thereby improving the shape of the via formed based on the second target graphic, avoiding the risk of misalignment between the via and the previous layer structure, and thus improving product performance.

[0066] In one embodiment, such as Figure 5 As shown, step S600 above: obtaining the roundness of the exposed pattern, includes steps S610-S630.

[0067] S610, acquires the light intensity distribution curve of the exposure pattern in each linear direction.

[0068] like Figure 6 As shown, the light intensity distribution curve reflects the relationship between light intensity and distance along a certain straight line in the exposed pattern. The light intensity distribution curve of the exposed pattern in each straight line direction can be obtained based on the optical model obtained from the second target pattern.

[0069] S620 determines the simulated exposure size of the exposure pattern in each straight line direction based on the light intensity distribution curve and the imaging threshold.

[0070] Imaging can only occur on a wafer when the light intensity exceeds the imaging threshold. Therefore, the distance in the light intensity distribution curve where the light intensity exceeds the imaging threshold can be used as the simulated exposure size in the direction of that line.

[0071] The S630 determines the roundness of the exposed pattern based on the minimum and maximum critical dimensions among multiple simulated exposure dimensions.

[0072] Specifically, the roundness of the exposed pattern can be calculated using the following formula:

[0073]

[0074] Where C represents roundness, This represents the smallest critical dimension among n simulated exposure dimensions. This represents the largest critical dimension among n simulated exposure dimensions. In this embodiment, the smaller the roundness, the closer the shape of the exposed pattern is to a circle.

[0075] In this embodiment, by acquiring the light intensity distribution curve of the exposure pattern in each straight line direction, the simulated exposure size of the exposure pattern in each straight line direction is determined based on the light intensity distribution curve and the imaging threshold, and the roundness of the exposure pattern is determined based on the minimum and maximum critical dimensions among multiple simulated exposure sizes, thereby determining whether it is necessary to continue adjusting the shape of the second target pattern based on the roundness.

[0076] In one embodiment, adjusting the size of a rectangular graphic based on its roundness to obtain a corrected layout graphic includes the step of: adjusting the size of the rectangular graphic located in the target straight line direction until the roundness is less than or equal to the preset value when the roundness is greater than a preset value, thereby obtaining the corrected layout graphic.

[0077] The preset values ​​can be set reasonably according to the actual requirements and specifications of the product. The target line direction is the direction of the line corresponding to the minimum critical dimension or the maximum critical dimension.

[0078] Specifically, a second evaluation point can be determined first, which is the intersection of multiple straight lines with the exposure pattern. Then, the size of the rectangular pattern can be adjusted based on the positional relationship between the second evaluation point and the corresponding first evaluation point along the target straight line. For example... Figure 7 As shown, taking 4 straight lines as an example, Figure 7 The solid line represents the second target graphic, the long dashed line represents the exposure graphic, and the short dashed line represents the resized rectangular graphic. OX is the direction of the line X corresponding to the minimum critical size. The first evaluation points on line X are points A and B, and the corresponding second evaluation points are points C and D. On line X, point C is closer to the center than point A; therefore, the size of the rectangular graphic corresponding to point A needs to be increased (e.g., ...). Figure 7(As shown by the short dashed line), for example, the length of the target side of the rectangle corresponding to point A can be increased; on the straight line X, points B and D coincide, so the size of the rectangle corresponding to point B does not need to be adjusted. Further, the adjusted second target image is subjected to simulated exposure again to obtain a new exposed image, and the roundness of the new exposed image is calculated. If the roundness of the new exposed image is still greater than the preset value, the above steps are repeated until the roundness of the exposed image is less than or equal to the preset value.

[0079] In this embodiment, when adjusting the size of the rectangular shape, if the length of the target side is increased, the width of the side perpendicular to the target side in the rectangular shape will decrease; if the length of the target side is decreased, the width of the side perpendicular to the target side in the rectangular shape will increase.

[0080] In addition, it should be noted that the direction of the target line is not fixed. Since the exposure pattern obtained by re-simulating exposure after adjusting the shape of the second target pattern may be different, the direction of the target line needs to be redetermined according to the minimum or maximum critical size of the new exposure pattern. Correspondingly, the position of the second evaluation point also needs to be redetermined.

[0081] In this embodiment, by continuously adjusting the size of the rectangular graphic based on the roundness of the simulated graphic, the shape of the second target graphic is changed, resulting in a very small roundness of the via obtained based on the second target graphic, which is very close to an ideal circle. For example, for a logic area structure, using a conventional method, only optical proximity correction is performed on the square graphic to obtain a corrected layout graphic. The roundness of the via obtained based on this layout graphic is approximately 8%, while the roundness of the via obtained based on the corrected second target graphic according to this application is approximately 3%. For a memory area structure, the roundness of the via obtained based on the conventional layout graphic is approximately 12%, while the roundness of the via obtained based on the corrected second target graphic according to this application is approximately 3.6%. It can be understood that using the layout graphic correction method of this application to correct the layout graphic significantly improves the roundness of the exposed layout graphic, thereby improving the problem of misalignment risk between the via and the previous layer structure, increasing the connection tightness between the via and the previous layer structure, and improving product performance.

[0082] In one embodiment, before performing simulated exposure based on the second target pattern to obtain the exposure pattern, the pattern correction method further includes: S800, performing optical proximity correction processing on the second target pattern.

[0083] Taking a target image with four straight lines as an example, the resulting image after optical proximity correction is as follows: Figure 8 As shown.

[0084] It should be noted that after adjusting the shape of the second target image according to the roundness, before performing simulated exposure on the adjusted second target image to obtain a new exposed image, optical proximity correction processing needs to be performed on the adjusted second target image again.

[0085] In one embodiment, multiple rectangular shapes have the same initial size.

[0086] It should be understood that although the steps in the flowcharts above are shown in the order illustrated, these steps are not necessarily executed in that order. Unless otherwise specified herein, there is no strict order restriction on the execution of these steps, and they can be executed in other orders. Moreover, at least some steps in each flowchart may include multiple steps or stages, which are not necessarily completed at the same time, but may be executed at different times. The execution order of these steps or stages is not necessarily sequential, but may alternate or alternate with other steps or at least some of the steps or stages in other steps.

[0087] Based on the same inventive concept, this application also provides a layout pattern correction apparatus for implementing the layout pattern correction method described above. The solution provided by this apparatus is similar to the implementation described in the above method; therefore, the specific limitations in one or more layout pattern correction apparatus embodiments provided below can be found in the limitations of the layout pattern correction method described above, and will not be repeated here.

[0088] In one exemplary embodiment, such as Figure 9 As shown, a layout graphic correction device is provided, including: a target graphic acquisition module 910, a simulated exposure module 920, a roundness acquisition module 930, and a correction module 940, wherein:

[0089] The target image acquisition module 910 is used to obtain a first target image with the key dimension of the target hole as the diameter, the center of the first target image coincides with the center of the target hole; set multiple straight lines passing through the center of the first target image, the intersection of the multiple straight lines with the first target image is the first evaluation point; set a rectangular image at each first evaluation point, the target side of the rectangular image is tangent to the first target image at the first evaluation point; and obtain a second target image based on the multiple rectangular images.

[0090] The simulated exposure module 920 is used to perform simulated exposure based on the second target image to obtain the exposed image.

[0091] The roundness acquisition module 930 is used to acquire the roundness of the exposed pattern.

[0092] The correction module 940 is used to adjust the size of the rectangular graphic according to the roundness to obtain the corrected layout graphic.

[0093] Each module in the aforementioned map correction device can be implemented entirely or partially through software, hardware, or a combination thereof. These modules can be embedded in or independent of the processor in a computer device, or stored in the memory of a computer device as software, so that the processor can call and execute the operations corresponding to each module.

[0094] In one exemplary embodiment, a computer device is provided, which may be a terminal, and its internal structure diagram may be as follows: Figure 10 As shown, the computer device includes a processor, memory, input / output interfaces, a communication interface, a display unit, and an input device. The processor, memory, and input / output interfaces are connected via a system bus, and the communication interface, display unit, and input device are also connected to the system bus via the input / output interfaces. The processor provides computational and control capabilities. The memory includes non-volatile storage media and internal memory. The non-volatile storage media stores the operating system and computer programs. The internal memory provides an environment for the operation of the operating system and computer programs stored in the non-volatile storage media. The input / output interfaces are used for exchanging information between the processor and external devices. The communication interface is used for wired or wireless communication with external terminals; wireless communication can be achieved through Wi-Fi, mobile cellular networks, Near Field Communication (NFC), or other technologies. When executed by the processor, the computer program implements a method for correcting a layout graphic. The display unit is used to form a visually visible image and can be a display screen, a projection device, or a virtual reality imaging device. The display screen can be an LCD screen or an e-ink screen. The input device of the computer device can be a touch layer covering the display screen, or buttons, trackballs, or touchpads set on the casing of the computer device, or external keyboards, touchpads, or mice, etc.

[0095] Those skilled in the art will understand that Figure 10 The structure shown is merely a block diagram of a portion of the structure related to the present application and does not constitute a limitation on the computer device to which the present application is applied. Specific computer devices may include more or fewer components than those shown in the figure, or combine certain components, or have different component arrangements.

[0096] In one exemplary embodiment, a computer device is provided, including a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to perform the following steps:

[0097] Using the critical dimension of the target hole as the diameter, a first target pattern is obtained, with the center of the first target pattern coinciding with the center of the target hole;

[0098] Set multiple straight lines that pass through the center of the first target graphic, and the intersection of the multiple straight lines with the first target graphic is the first evaluation point;

[0099] A rectangular shape is set at each first evaluation point, and the target side of the rectangular shape is tangent to the first target shape at the first evaluation point.

[0100] The second target graphic is obtained based on multiple rectangular graphics;

[0101] Simulated exposure is performed based on the second target image to obtain the exposed image;

[0102] Obtain the roundness of the exposed image;

[0103] Adjust the size of the rectangular graphic based on the roundness to obtain the corrected layout graphic.

[0104] In one embodiment, this application also provides a layout graphic structure, including a layout graphic obtained according to the layout graphic correction method provided in any of the above embodiments. Each square graphic on the initial layout graphic can be corrected using the layout graphic correction method provided in any of the above embodiments to obtain a plurality of second target graphics, and the plurality of second target graphics constitute the layout graphic structure.

[0105] An unexpected effect of this application is that: by using the critical size of the target hole as the diameter, a first target pattern 200 is obtained whose center coincides with the center of the target hole; multiple straight lines are set through the center of the first target pattern 200, and the intersection of the multiple straight lines with the first target pattern 200 is the first evaluation point; a rectangular pattern 310 is set at each first evaluation point, and the target edge of the rectangular pattern 310 is tangent to the first target pattern 200 at the first evaluation point; a second target pattern 300 is obtained based on the multiple rectangular patterns 310; further, simulated exposure is performed based on the second target pattern 300 to obtain an exposed pattern; the roundness of the exposed pattern is obtained based on the size of the exposed pattern obtained from the second target pattern; the size of the rectangular pattern is adjusted based on the roundness to obtain the corrected layout pattern. By setting the second target graphic to a shape with a border formed by multiple rectangles, when adjusting the second target graphic according to the roundness of the exposed graphic, the local shape of the second target graphic can be precisely adjusted by adjusting the size of the rectangles, thus improving the adjustment accuracy of the second target graphic. This, in turn, improves the shape of the via formed based on the second target graphic, reduces the risk of misalignment between the via and the front layer structure, improves the connection tightness between the via and the front layer structure, and enhances product performance.

[0106] In the description of this specification, references to terms such as "some embodiments," "other embodiments," and "ideal embodiments" indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, the illustrative descriptions of the above terms do not necessarily refer to the same embodiments or examples.

[0107] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features of the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0108] The above embodiments merely illustrate several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A method for correcting a layout graphic, characterized in that, include: Using the critical dimension of the target hole as the diameter, a first target pattern is obtained, and the center of the first target pattern coincides with the center of the target hole; Multiple straight lines are set to pass through the center of the first target graphic, and the intersection of the multiple straight lines with the first target graphic is the first evaluation point; A rectangular shape is set at each of the first evaluation points, and the target side of the rectangular shape is tangent to the first target shape at the first evaluation point; A second target graphic is obtained based on multiple rectangular graphics; Simulated exposure is performed based on the second target image to obtain the exposed image; Obtain the roundness of the exposed pattern; Adjust the size of the rectangular graphic according to the roundness to obtain the corrected layout graphic.

2. The method according to claim 1, characterized in that, The step of obtaining the roundness of the exposed pattern includes: Obtain the light intensity distribution curve of the exposure pattern in each of the straight line directions; The simulated exposure size of the exposure pattern in each of the straight lines is determined based on the light intensity distribution curve and the imaging threshold. The roundness of the exposure pattern is determined based on the minimum and maximum critical dimensions among the multiple simulated exposure dimensions.

3. The method according to claim 2, characterized in that, The step of adjusting the size of the rectangular graphic according to the roundness to obtain the corrected layout graphic includes: If the roundness is greater than a preset value, adjust the size of the rectangular graphic located in the target straight line direction until the roundness is less than or equal to the preset value to obtain the corrected layout graphic; wherein, the target straight line direction is the direction of the straight line corresponding to the minimum critical dimension or the maximum critical dimension.

4. The method according to claim 3, characterized in that, When the roundness is greater than a preset value, adjusting the size of the rectangular shape located in the target straight line direction includes: A second evaluation point is determined on the exposure pattern, wherein the second evaluation point is the intersection of the plurality of straight lines and the exposure pattern; The size of the rectangular graphic is adjusted according to the positional relationship between the second evaluation point and the corresponding first evaluation point along the target straight line.

5. The method according to claim 1, characterized in that, Before performing simulated exposure based on the second target image to obtain the exposed image, the method further includes: The second target image is subjected to optical proximity correction processing.

6. The method according to claim 1, characterized in that, The number of straight lines is greater than or equal to 3.

7. The method according to claim 1, characterized in that, The initial dimensions of the multiple rectangular shapes are the same.

8. A layout graphic correction device, characterized in that, include: The target image acquisition module is used to obtain a first target image with the critical size of the target hole as the diameter, wherein the center of the first target image coincides with the center of the target hole; to set multiple straight lines passing through the center of the first target image, wherein the intersection of the multiple straight lines with the first target image is a first evaluation point; to set a rectangular image at each first evaluation point, wherein the target side of the rectangular image is tangent to the first target image at the first evaluation point; and to obtain a second target image based on the multiple rectangular images. The simulated exposure module is used to perform simulated exposure based on the second target image to obtain an exposed image; A roundness acquisition module is used to acquire the roundness of the exposed pattern; The correction module is used to adjust the size of the rectangular graphic according to the roundness to obtain the corrected layout graphic.

9. A computer device comprising a memory and a processor, wherein the memory stores a computer program, characterized in that, When the processor executes the computer program, it implements the steps of the method according to any one of claims 1 to 7.

10. A layout graphic structure, characterized in that, The layout graphic obtained by the method for correcting the layout graphic according to any one of claims 1-7.

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