Plasma parameter measuring device

Abstract

Various example embodiments relate to a plasma parameter measurement device comprising: an upper plate and a lower plate, the upper plate and the lower plate comprising a first material; a semiconductor device includes an upper plate including a semiconductor substrate to be subjected to plasma, a first sensor including a first collector, the first collector including a first material, and the first material being included in the semiconductor substrate to be subjected to plasma, and a first insulating structure surrounding a side surface of the first collector in a first hole in the upper plate and exposing at least a portion of an upper surface of the first collector. And a second sensor including a second collector including the first material and a second insulating structure surrounding a side surface of the second collector in a second hole in the upper plate and exposing at least a portion of an upper surface of the second collector.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims the benefit of priority from Korean Patent Application No. 10-2024-0040210 filed on March 25, 2024, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0003] The present inventive concept relates to a plasma parameter measuring device. Background Art

[0004] Plasma processing can be used to manufacture semiconductor devices. Plasma can be formed in the chamber space where the plasma processing is performed, and the formed plasma can induce effects such as etching and deposition on the surface of the semiconductor substrate. To induce the desired effect, the plasma parameters can be carefully controlled.

[0005] In order to effectively control the plasma parameters, it is desirable to monitor the plasma parameters in situ in the chamber space. Summary of the Invention

[0006] Various example embodiments of the present inventive concepts are to provide a plasma parameter measurement apparatus that can monitor in-situ in a chamber space a component of a plasma parameter having a directionality within a desired (and / or alternatively, predetermined) direction range.

[0007] According to various exemplary embodiments of the present inventive concepts, a plasma parameter measurement device includes: an upper plate and a lower plate comprising a first material, the first material being included in a semiconductor substrate to be subjected to plasma; a first sensor comprising: a first collector comprising the first material, and a first insulating structure surrounding a side surface of the first collector in a first hole in the upper plate and exposing at least a portion of an upper surface of the first collector. A step difference between an upper surface of the first insulating structure and an upper surface of the first collector has a first aspect ratio relative to a diameter of the exposed surface of the first collector; a second sensor comprising: a second collector comprising the first material, and a second insulating structure surrounding a side surface of the second collector in a second hole in the upper plate and exposing at least a portion of an upper surface of the second collector, wherein the step difference between an upper surface of the second insulating structure and an upper surface of the second collector has a second aspect ratio relative to the diameter of the exposed surface of the second collector, the second aspect ratio being different from the first aspect ratio; and a circuit substrate positioned between the upper plate and the lower plate, the circuit substrate comprising circuitry configured to measure a plasma parameter within a range of directions based on a differential signal between a first signal from the first sensor and a second signal from the second sensor.

[0008] According to various exemplary embodiments of the present inventive concepts, a plasma parameter measurement device includes: an upper plate and a lower plate comprising a first material, the first material being included in a semiconductor substrate to be subjected to plasma; a plurality of sensor pairs, each comprising: a first sensor including a first collector including the first material, a first insulating structure surrounding a side surface of the first collector, the first insulating structure having an upper surface of the first insulating structure coplanar with an upper surface of the first collector in a hole in the upper plate; a second sensor including a second collector including the first material, and a second insulating structure surrounding a side surface of the second collector in a hole in the upper plate and having an upper surface protruding relative to the upper surface of the second collector; and a circuit substrate between the upper and lower plates, the circuit substrate comprising a circuit configured to measure a distribution of a plasma parameter in a range of directions on an upper surface of the upper plate. The measurement of the distribution of the plasma parameter is based on a differential signal between signals acquired by the first sensor and the second sensor in each of the plurality of sensor pairs.

[0009] According to various exemplary embodiments of the present inventive concepts, a plasma parameter measurement device includes: an upper plate and a lower plate each including a first material, the first material being included in a semiconductor substrate to be subjected to plasma; a circuit substrate between the upper and lower plates and including a circuit; and a sensor including: a collector including the first material, the collector including: an inner surface facing the circuit substrate, an outer surface opposite the inner surface, an insulating structure surrounding the collector and exposing at least a portion of the outer surface of the collector, and a signal pad on a side surface of the circuit substrate in contact with the inner surface of the collector. The circuit is configured to measure a plasma parameter within a range of directions based on a signal from the signal pad.

[0010] According to various example embodiments of the present inventive concepts, a plasma parameter measurement device includes: an upper plate and a lower plate including a first material, and the first material is included in a semiconductor substrate to be subjected to plasma; a sensor in a hole formed in the upper plate, the sensor including: a collector including the first material; a signal pad contacting a lower surface of the collector; an insulating structure surrounding a side surface of the collector and exposing at least a portion of an upper surface of the collector, the insulating structure having a step difference between an upper surface of the insulating structure and an upper surface of the collector; an actuator configured to control an angle of the upper surface of the collector; and a circuit substrate between the upper plate and the lower plate and including a circuit substrate configured to measure a plasma parameter within a range of directions based on a signal from the signal pad. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] The above and other aspects, features and advantages of the present inventive concept will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:

[0012] Figure 1 is a perspective view schematically illustrating a plasma parameter measurement apparatus according to various example embodiments.

[0013] Figure 2 is a diagram illustrating an example of plasma processing.

[0014] Figure 3 is a diagram illustrating an example of a plasma processing apparatus.

[0015] Figure 4 is a cross-sectional view illustrating a portion of a plasma parameter measurement apparatus according to various example embodiments.

[0016] 5A to 5D is a diagram illustrating a sensor pair in detail according to various example embodiments.

[0017] Figure 6 is a diagram illustrating a sensor pair in detail according to various example embodiments.

[0018] Figure 7A and Figure 7B is a diagram illustrating a sensor pair in detail according to various example embodiments.

[0019] Figure 8 is a flow chart illustrating a method for measuring plasma parameters according to various example embodiments.

[0020] Figures 9A to 9C is a diagram illustrating a sensor in detail according to various example embodiments.

[0021] Figure 10A and Figure 10B is a diagram illustrating a sensor in detail according to various example embodiments.

[0022] Figure 11A and Figure 11B are diagrams illustrating a plasma parameter measurement apparatus and distribution of plasma parameters according to various example embodiments.

[0023] Figure 12 is a flow chart illustrating a method for measuring the distribution of a plasma parameter according to various example embodiments.

[0024] Figure 13 is a diagram illustrating a plasma parameter measurement system according to various example embodiments. DETAILED DESCRIPTION

[0025] Hereinafter, preferred embodiments will be described with reference to the accompanying drawings.

[0026] Figure 1is a perspective view schematically illustrating a plasma parameter measurement apparatus according to various example embodiments.

[0027] refer to Figure 1 The plasma parameter measurement device 100 may have a structure W' having a size and shape similar to that of the semiconductor substrate. For example, the plasma parameter measurement device 100 may have a circular shape with a diameter of 100 mm to 500 mm in the XY plane and a maximum thickness of 0.5 mm to 3 mm in the Z direction.

[0028] The surface of the plasma parameter measurement device 100 may include an upper plate 110 and a lower plate 120 formed of the same material as the semiconductor substrate. For example, when plasma processing is performed on a silicon (Si) substrate, the upper plate 110 and the lower plate 120 may be formed of silicon.

[0029] The plasma parameter measurement device 100 may be interchangeable with the substrate. For example, the plasma parameter measurement device 100 may be introduced into a chamber space where plasma processing is performed in the same manner as the substrate, may measure plasma parameters while loaded into the chamber space, and may then be removed from the chamber space.

[0030] Furthermore, contamination of the chamber space caused by the plasma parameter measurement apparatus 100 can be minimized. For example, contamination of the chamber space after in-situ measurement of plasma parameters using the plasma parameter measurement apparatus 100 during plasma processing can be similar to contamination after plasma processing using a silicon substrate. For example, contamination of the chamber space after measuring plasma parameters can be purified by a process for purifying the chamber space after performing plasma processing.

[0031] In some plasma processes, plasma parameters with directionality may affect the quality of semiconductor devices and the productivity of the process. For example, the ion flux of positive ions (+) incident on a semiconductor substrate may have a directionality that depends on the angle of incidence of the positive ions. The etching rate of the side surfaces of the structure formed on the substrate may affect the productivity of the process, and the ion flux of the lateral component may affect the etching rate of the side surfaces of the structure formed on the substrate. In order to effectively control the etching rate of the side surfaces of the structure formed on the substrate, it is desirable to be able to monitor the lateral component of the plasma parameters (including the ion flux) with directionality in situ in the chamber space.

[0032] According to various exemplary embodiments, the plasma parameter measurement apparatus 100 may include sensors 150, 160, 170, and 180, which may measure components of a directional plasma parameter in a desired (and / or alternatively, predetermined) directional range (particularly in a lateral direction) in situ within a chamber space; and a circuit 131, which may collect measurement results of the sensors 150 to 180 in the plasma parameter measurement apparatus 100 and provide the measurement results to the outside. The sensors 150 to 180 may include collectors having surfaces formed of the same material as the semiconductor substrate, and may acquire values ​​of the plasma parameter in the desired (and / or alternatively, predetermined) directional range.

[0033] Hereinafter, before describing in detail a plasma parameter measurement apparatus according to various example embodiments, an example of plasma processing will be described, and an example of a plasma processing apparatus in which the plasma parameter measurement apparatus may be incorporated will be described.

[0034] Figure 2 is a diagram illustrating an example of plasma processing.

[0035] The dielectric-on-dielectric (DoD) process may refer to a process of selectively depositing a second dielectric layer on the surface of a patterned first dielectric layer. When the DoD process is used, the alignment of the vias may be improved because the second dielectric layer may not be deposited on the conductive pattern on the upper surface of the substrate but may be selectively deposited on the surface of the first dielectric layer. The DoD process may include Figure 2 S11 to S14.

[0036] The substrate W may include a first dielectric layer D1 patterned with a conductive pattern CP. In S11 , an inhibitor IN may be deposited on an upper surface of the conductive pattern CP.

[0037] In S12, the second dielectric layer D2 may be selectively deposited on the upper surface of the substrate W. Specifically, due to the inhibitor IN deposited on the upper surface of the conductive pattern CP, the second dielectric layer D2 may be prevented from being deposited on the upper surface of the conductive pattern CP, and the second dielectric layer D2 may be deposited on the upper surface of the first dielectric layer D1.

[0038] When the thickness of the second dielectric layer D2 deposited thereon is higher than the thickness of the inhibitor IN deposited thereon, the side surface of the second dielectric layer D2 may be exposed, and the dielectric material may be deposited on the exposed side surface. As a result, a mushrooming phenomenon may occur in which the side surface of the second dielectric layer D2 has an expanded mushroom shape.

[0039] The mushrooming phenomenon may deteriorate the quality of the substrate W. In S13 , an etching process may be performed to etch the lateral extension portion of the second dielectric layer D2 . Due to the etching process, the extension portion may be removed and the surface on which the inhibitor IN is deposited may be exposed.

[0040] In S14 , a post process may be performed to remove the inhibitor IN and expose the surface of the conductive pattern CP formed on the first dielectric layer D1 .

[0041] The etching process of S13 may be performed when positive ions (+) included in the plasma collide with the upper surface of the substrate W. The amount of positive ions reaching a given region of the substrate may be referred to as ion flux.

[0042] Positive ions can be incident from various directions and can collide with the upper surface of the substrate. For example, the ion flux can have directionality. If the ion flux is not controlled according to direction during the etching process, not only the side surfaces of the second dielectric layer D2 but also the upper surface of the second dielectric layer D2 may be etched, and the thickness of the second dielectric layer D2 may be reduced. If the operation of depositing the second dielectric layer D2 in S12 and the operation of etching the second dielectric layer D2 in S13 are repeated to form the target thickness of the second dielectric layer D2, the time period required for the DoD process may increase.

[0043] When the direction of the ion flux can be controlled, the side surface of the second dielectric layer D2 can be efficiently etched in the etching process, and a time period for forming a target thickness of the second dielectric layer D2 can be reduced.

[0044] According to various example embodiments, a plasma parameter measurement apparatus capable of measuring plasma parameters having directionality including ion flux may be provided.

[0045] Figure 3 is a diagram illustrating an example of a plasma processing apparatus.

[0046] refer to Figure 3 The plasma processing apparatus 900 may include a chamber body 910 , a gas supply device 920 , an upper electrode 930 , a first power device 931 , an electrostatic chuck 940 , a second power device 941 , an exhaust device 950 , and a controller 960 .

[0047] The chamber body 910 can be used as a shell to form a chamber space CH defined by an outer wall. The chamber space CH can be used to perform plasma treatment using plasma PLA to treat a substrate W to be processed, and the plasma PLA is generated by exciting a processing gas supplied by a gas supply device 920. The outer wall can be formed of a material with excellent wear resistance and corrosion resistance. During plasma treatment (e.g., an etching process), the chamber body 910 can maintain the chamber space CH in a sealed state with a desired (and / or alternatively, predetermined) pressure and a desired (and / or alternatively, predetermined) temperature. An exhaust device 950 can be provided on the outer wall of the chamber body 910 to exhaust gas from the internal space.

[0048] The gas supply device 920 may supply a process gas for performing a plasma process to the chamber space CH.

[0049] The upper electrode 930 may be disposed at an upper portion of the chamber body 910 . A first high frequency power (eg, RF power) may be applied to the upper electrode 930 through a first power device 931 .

[0050] The electrostatic chuck 940 may be disposed in the chamber space CH and may fix the substrate W on the upper surface using static electricity. A second high-frequency power (e.g., RF power) may be applied to the electrostatic chuck 940 through a second power device 941. For example, the electrostatic chuck 940 may function as a lower electrode.

[0051] The process gas supplied from the gas supply device 920 may be converted into a plasma PLA state by at least one of a first high-frequency power applied to the upper electrode 930 and a second high-frequency power applied to the electrostatic chuck 940. Also, positive ions included in the plasma PLA may be incident on the substrate W by the second high-frequency power to perform plasma processing.

[0052] The exhaust device 950 may exhaust the process gas in the chamber space CH to the outside to reduce the pressure of the chamber space. For example, the exhaust device 950 may include a pump device.

[0053] The controller 960 may control overall operations of the gas supply device 920 , the first power device 931 , the second power device 941 , the exhaust device 950 , etc. However, example embodiments are not limited thereto.

[0054] The size of the path for introducing the substrate W into the chamber space CH may be limited, and since the chamber space CH should be maintained in a sealed state, it may be difficult to arbitrarily open and close the chamber space CH. Therefore, the thickness of the plasma parameter measurement device for measuring plasma parameters while being introduced into the chamber space CH may be limited depending on the path introduced into the chamber space CH. For example, the plasma processing apparatus 900 may be manufactured so that the chamber space CH has a space capable of accommodating a substrate having a thickness of 775 μm, and an object having a thickness of up to or approximately 1.5 mm can be introduced into the chamber space CH. In the plasma processing apparatus 900, only a plasma parameter measurement device having a maximum thickness of approximately 1.5 mm or less can be introduced into the chamber space CH to perform plasma parameter measurement.

[0055] When a sensor structure having an inclined surface is formed on the upper surface of a plasma parameter measurement device to measure a plasma parameter in a desired (and / or alternatively, predetermined) directional range (e.g., lateral direction), the sensor structure may have a large thickness. Therefore, it may be difficult to manufacture a plasma parameter measurement device that meets the thickness restriction.

[0056] According to various example embodiments, the plasma parameter measurement device may have a size and shape similar to that of the semiconductor substrate, and may measure a plasma parameter in a lateral direction using at least one of a sensor structure formed on an upper surface, a sensor structure having a surface parallel to the upper surface of the substrate, and a sensor structure formed on a side surface.

[0057] In the following, reference will be made to Figures 4 to 13 A plasma parameter measurement apparatus according to various example embodiments is described in detail.

[0058] Figure 4 is a cross-sectional view showing a portion of a plasma parameter measurement device according to various example embodiments. Specifically, Figure 4 Shown along the reference Figure 1 Cross sections of the plasma parameter measurement device 100 taken along lines II', III' and III'.

[0059] Reference Figure 4 The plasma parameter measurement device 100 may include an upper plate 110 , a lower plate 120 , a circuit substrate 130 , a filling material 140 , and a plurality of sensors 150 to 180 .

[0060] The upper plate 110 and the lower plate 120 may be formed of the same material as the semiconductor substrate processed in the plasma process (e.g., silicon (Si)). Furthermore, the upper plate 110 and the lower plate 120 may each have a shape and size that is the same as or similar to that of the semiconductor substrate. For example, the upper plate 110 and the lower plate 120 may each be formed in a circular shape with a diameter of 100 mm to 500 mm.

[0061] Since the shapes of the upper plate 110 and the lower plate 120 are similar to those of the semiconductor substrate, the plasma parameter measurement device 100 can be introduced into the chamber space in the same manner as the semiconductor substrate, and since the materials of the upper plate 110 and the lower plate 120 are the same as those of the semiconductor substrate, contamination of the chamber space can be minimized.

[0062] The upper surface of the upper plate 110 may correspond to the upper surface of the semiconductor substrate, and the lower surface of the lower plate 120 may correspond to the lower surface of the semiconductor substrate. For example, when measuring plasma parameters, the upper surface of the upper plate 110 may be exposed to the plasma in the chamber space CH. In addition, the lower surface of the lower plate 120 may be fixed to an electrostatic chuck.

[0063] The first to third sensors 150, 160, and 170 may be disposed in the plurality of holes H1, H2, and H3 formed in the upper plate 110. In addition, the fourth sensor 180 may be disposed on side surfaces of the upper plate 110 and the lower plate 120.

[0064] A circuit substrate 130 including circuits may be disposed between the upper plate 110 and the lower plate 120. The circuit substrate 130 may collect signals from the plurality of sensors 150 to 180, may measure plasma parameters based on the signals, and may transmit information of the measured plasma parameters to the outside.

[0065] Filling material 140 may be filled between the upper plate 110 and the circuit substrate 130 and between the lower plate 120 and the circuit substrate 130. The filling material 140 may fix and support the upper plate 110, the lower plate 120, the circuit substrate 130, and the plurality of sensors 150 to 180, and may maintain the circuit substrate 130 in a vacuum state.

[0066] The plurality of sensors 150 to 180 may have a surface exposed to plasma and may convert the amount of positive ions incident on the surface into a signal, for example, an electrical signal such as a current signal.

[0067] The first sensor 150 and the second sensor 160 may form a sensor pair based on a differential signal between a first signal generated from the first sensor 150 and a second signal generated from the second sensor 160. Thus, a plasma parameter within a desired (and / or alternatively, predetermined) range of directions may be measured.

[0068] The first sensor 150 may include a first collector 151 , a first insulating structure 152 , a first signal pad 153 , and a first signal line 154 .

[0069] The first collector 151 may have an upper surface exposed to the plasma and may collect positive ions incident on the upper surface. The first collector 151 may be formed of the same material as the semiconductor substrate and may collect positive ions under the same environment as the plasma processing environment. The upper surface of the first collector 151 may be parallel to the upper surface of the upper plate 110. In various exemplary embodiments, the upper surface of the first collector 151 may be substantially coplanar with the upper surface of the upper plate 110.

[0070] The first insulating structure 152 may have a structure surrounding the side surface of the first collector 151. The first insulating structure 152 may electrically separate the first collector 151 from the upper plate 110. In various exemplary embodiments, the upper surface of the first insulating structure 152 may be substantially coplanar with the upper surface of the first collector 151. For example, the step difference between the upper surface of the first insulating structure 152 and the first collector 151 may be "0." In this case, the fact that the step difference is "0" may also include a case where the step difference can be within a tolerance range.

[0071] In various example embodiments, the first insulating structure 152 may include at least one of quartz and glass. Since quartz and glass are stable materials, contamination of the chamber space may be minimized even when plasma processing is performed while being exposed to the chamber space.

[0072] The first signal pad 153 can convert positive ions incident on the surface of the first collector 151 into a signal. For example, the first signal pad 153 may include a conductive material and can convert the positive ions into an electrical signal. Depending on the amount of positive ions incident on the surface of the first collector 151 per hour, different amounts of current can be generated in the first signal pad 153. The first signal pad 153 can be disposed on a side surface of the first collector 151 that is not exposed to the plasma.

[0073] In various example embodiments, the first signal pad 153 may include at least one of gold (Au) and tungsten (W).

[0074] In various example embodiments, first signal pads 153 may be formed by depositing, plating, or sputtering metal on one surface of first collector 151. In various example embodiments, first signal pads 153 may be formed by attaching a metal plate to the one surface of first collector 151 using an adhesive material.

[0075] The first signal line 154 may transmit a signal generated by the first signal pad 153 to a circuit. The first signal line 154 may be formed of a conductive material such as metal.

[0076] The second sensor 160 may include a second collector 161, a second insulating structure 162, a second signal pad 163, and a second signal line 164. Except for the second insulating structure 162, the second sensor 160 may have a similar structure to the first sensor 150. For example, the second collector 161 may have a size and shape that is the same as or similar to that of the first collector 151, and the upper surface of the second collector 161 may be parallel to or substantially coplanar with the upper surface of the upper plate 110.

[0077] Unlike the step difference between the upper surface of first insulating structure 152 and the upper surface of first collector 151, which is "0," the step difference between the upper surface of second insulating structure 162 and the upper surface of second collector 161 can be greater than "0." Due to the difference between the step differences of first insulating structure 152 and second insulating structure 162, the range of directions in which positive ions are incident on first collector 151 and second collector 161 can vary. Based on the differential signal between the first signal generated by first sensor 150 and the second signal generated by second sensor 160, plasma parameters in the lateral direction can be measured.

[0078] Will refer to it later Figures 5A to 8 Methods for measuring plasma parameters using a sensor pair including a first sensor 150 and a second sensor 160 and various embodiments of the sensor pair are described.

[0079] The third sensor 170 may include a third collector 171, a third insulating structure 172, a third signal pad 173, a third signal line 174, an actuator 175, and a control signal line 176. The third collector 171, the third insulating structure 172, and the third signal pad 173 of the third sensor 170 may have a structure similar to the second collector 161, the second insulating structure 162, and the second signal pad 163 of the second sensor 160. For example, similar to the second insulating structure 162, the upper surface of the third insulating structure 172 and the upper surface of the third collector 171 may have a step difference greater than "0".

[0080] Actuator 175 can move the structure including third collector 171, third insulating structure 172, and third signal pad 173 based on a control signal from the circuit, and can control the direction in which the surface of third collector 171 faces. Control signal line 176 can transmit the control signal generated from the circuit to actuator 175. Third signal line 174 can be implemented as a wire to provide flexible movement of the structure.

[0081] The third sensor 170 can measure the plasma parameter within a desired (and / or alternatively, predetermined) range of directions based on the direction in which the surface of the third collector 171 faces. Figure 9A and Figure 9B Methods for measuring plasma parameters using the third sensor 170 and various embodiments of the third sensor 170 are described below.

[0082] The fourth sensor 180 may include a fourth collector 181, a fourth insulating structure 182, a fourth signal pad 183, and a fourth signal line 184. The fourth sensor 180 may have a similar structure to the first sensor 150 or the second sensor 160. Unlike the upper surface of the first collector 151 of the first sensor 150 and the upper surface of the second collector 161 of the second sensor 160 being parallel to the upper surface of the upper plate 110, the fourth sensor 180 may be disposed on a side surface of the plasma parameter measurement apparatus 100 such that the upper surface of the fourth collector 181 may be perpendicular to the upper surface of the upper plate 110.

[0083] The fourth sensor 180 can measure a plasma parameter within a desired (and / or alternatively, predetermined) range of directions based on the direction in which the surface of the fourth collector 181 faces. Figure 10A and Figure 10B Methods for measuring plasma parameters using the fourth sensor 180 and various embodiments of the fourth sensor 180 are described.

[0084] 5A to 5D is a diagram illustrating a sensor pair in detail according to various example embodiments.

[0085] Figure 5A FIG. 1 shows a first sensor 150 and a second sensor 160, and a partial configuration of a circuit that can be formed on the circuit substrate 130, as shown in FIG. Figure 4 As stated.

[0086] exist Figure 5A, a cross-section of the first sensor 150 and the second sensor 160 taken along the XZ plane is shown. The direction of ion incidence can be defined based on the angle at which the direction is set relative to the Z axis. The angle parallel to the Z axis (e.g., the angle perpendicular to the first collector 151 and the second collector 161) can be defined as 90°, and as the angle with the Z axis increases, the angle can be defined as a lower angle. And, the angle parallel to the X axis (e.g., the angle parallel to the first collector 151 and the second collector 161) can be defined as 0°.

[0087] As reference Figure 4 As described above, the step difference between the upper surface of the first insulating structure 152 and the upper surface of the first collector 151 can be "0". From vertically incident positive ions (+) to horizontally incident positive ions, the first collector 151 can collect positive ions incident from all directions on the upper surface of the upper plate 110. The first signal pad 153 can convert the amount of collected positive ions into a first signal S1 and provide the first signal S1 to the circuit through the first signal line 154.

[0088] The step difference between the upper surface of the second insulating structure 162 and the upper surface of the second collector 161 can be greater than "0". The second collector 161 can collect the amount of positive ions incident within a limited range of directions, which can be determined based on the diameter of the upper surface of the second collector 161 and the aspect ratio determined by the step difference. For example, the incident positive ions can be collected within a direction range from 90° perpendicular to the upper surface of the upper plate 110 to an angle θ determined based on the aspect ratio. The second signal pad 163 can convert the amount of collected positive ions into a second signal S2, and the second signal S2 can be provided to the circuit through the second signal line 164.

[0089] The circuit may include a differential amplifier 132 and a sensing circuit 133. The differential amplifier 132 may output a differential signal between the first signal S1 and the second signal S2 to the sensing circuit 133. The sensing circuit 133 may use the differential signal to measure plasma parameters, such as ion flux, using positive ions incident from the side surface. For example, the differential signal may correspond to the plasma parameter in a direction ranging from 0° parallel to the upper surface of the upper plate 110 to an angle θ.

[0090] Figure 5B The structure of the first sensor 150 and the second sensor 160 in the XY plane is shown. Hereinafter, a direction based on the X axis or the Y axis may be referred to as an orientation.

[0091] According to various exemplary embodiments, the upper surface of the first collector 151 and the upper surface of the second collector 161 may have a circular shape. Since the upper surface of the second collector 161 has a circular shape, the second collector 161 can collect positive ions incident within the same direction range from all orientations. In this case, the orientation can be defined as an angle on the XY plane. The shape of the first insulating structure 152 and the shape of the second insulating structure 162 are shown as circular, but the shapes of the first insulating structure 152 and the second insulating structure 162 are not limited to circular.

[0092] Figure 5C The aspect ratio of the second sensor 160 and the directional range in which the plasma parameter can be detected according to the aspect ratio are shown. The aspect ratio of the second sensor 160 can be defined as the ratio of the step difference H between the upper surface of the second insulating structure 162 and the upper surface of the second collector 161 to the diameter R of the upper surface of the second collector 161, that is, (H / R).

[0093] The directional range of the plasma parameter measurable by the sensor pair comprising first sensor 150 and second sensor 160 can be determined based on the aspect ratio of second sensor 160. Specifically, the differential signal (S1-S2) between first signal S1 and second signal S2 can correspond to the plasma parameter within a directional range corresponding to the difference between the directional range in which positive ions are incident on first collector 151 and the directional range in which positive ions are incident on second collector 161. Therefore, the directional range of the plasma parameter measurable by the sensor pair can include a range from 0° to θ. θ can be determined as the inverse tangent of the aspect ratio (H / R).

[0094] According to various example embodiments, a plasma parameter in a lateral direction including a direction horizontal to the upper plate 110 may be measured using a sensor pair having collectors each having an upper surface parallel to the upper plate 110 .

[0095] According to various exemplary embodiments, the thickness of the plasma parameter measurement apparatus 100 may be reduced. Figure 5C and Figure 5D The thickness of the plasma parameter measurement device 100 is explained.

[0096] Figure 5D A comparative example different from the inventive example is shown. According to the comparative example, a sensor can be disposed on the upper plate so that the collector CL faces the lateral direction to measure plasma parameters in the lateral direction. The direction range of the plasma parameters measurable by the sensor can include a range from 0° to θ.

[0097] According to the comparative example, when the collector CL is formed to expose the same area as the collector 161 of the inventive example, the sensor may protrude from the upper plate by at least a height corresponding to the sum of the diameter R of the collector CL and the thickness of the insulating structure DS. As a result, the maximum thickness of the plasma parameter measurement device may become thicker, and it may be difficult to introduce the plasma parameter measurement device.

[0098] According to an example of the invention, using the differential signal (S1-S2) between the first signal S1 and the second signal S2 to measure plasma parameters in the lateral direction can reduce the maximum thickness of the plasma parameter measurement device 100. For example, the height in the Z direction of a sensor capable of measuring plasma parameters in a directional range of 0° to 45° or less can be less than or equal to the diameter R of the upper surface of the collector. The protruding height of a sensor capable of measuring plasma parameters in a directional range of 0° to 11.3° can be only 1 / 5 of the diameter R of the upper surface of the collector.

[0099] In addition, in the plasma parameter measurement apparatus according to the comparative example, not only the direction of plasma incidence but also the orientation of plasma incidence are limited depending on the orientation facing the exposed area of ​​the collector CL. Therefore, it may be difficult for the plasma parameter measurement apparatus to measure plasma parameters within a desired (and / or alternatively, predetermined) direction range in all orientations.

[0100] According to various example embodiments, the plasma parameter measurement apparatus 100 may measure plasma parameters in a lateral direction using a differential signal ( S1 − S2 ) between the first signal S1 and the second signal S2 in a desired (and / or alternatively, predetermined) directional range at all orientations.

[0101] Reference 5A to 5D , shows an embodiment of a sensor pair in which the step difference of the first sensor 150 is "0" and the step difference of the second sensor 160 is greater than "0". The present inventive concept is not limited thereto. For example, the sensor pair may include the first sensor 150 and the second sensor 160 having a step difference greater than "0" to measure plasma parameters in various directional ranges.

[0102] Figure 6 is a diagram illustrating a sensor pair in detail according to various example embodiments.

[0103] Figure 6 The first sensor 150a, the second sensor 160, the differential amplifier 132 and the sensing circuit 133 are shown. In addition to the structure of the first sensor 150a, Figure 6 The sensor pairs in Figure 5AThe sensor pair shown in FIG has the same structure. Hereinafter, the structure of the first sensor 150a will be described focusing on the structure of the first sensor 150a. Figure 6 The sensor pair Figure 5A The difference between the sensor pairs.

[0104] According to various exemplary embodiments, the first sensor 150a may include a first insulating structure 152a. A step difference between an upper surface of the first insulating structure 152a and an upper surface of the first collector 151 may be greater than 0. The aspect ratio of the first sensor 150a may be different from that of the second sensor 160.

[0105] According to various example embodiments, a plasma parameter may be measured within a directional range determined based on a differential signal between a first signal S1a output from the first sensor 150a and a second signal S2 output from the second sensor 160. The sensor pair including the first sensor 150a and the second sensor 160 may measure the plasma parameter within a directional range between a first angle θ1 defined by an aspect ratio of the first sensor 150a and a second angle θ2 defined by an aspect ratio of the second sensor 160.

[0106] As reference Figures 5A to 6 As described above, the collector of each sensor included in the sensor pair may have a single exposed surface, but the present invention is not limited thereto. For example, the insulating structure may further include a capillary structure covering the upper surface of the collector, and the collector may have multiple exposed surfaces passing through the capillary structure.

[0107] Figure 7A and Figure 7B is a diagram illustrating a sensor pair in detail according to various example embodiments.

[0108] Figure 7A A first sensor 150b, a second sensor 160b, a differential amplifier 132, and a sensing circuit 133 are shown. Figure 7A The differential amplifier 132 and the sensing circuit 133 can be used with reference Figure 5A The differential amplifier 132 and sensing circuit 133 described are the same. And, Figure 7B The structure of the first sensor 150b in the XY plane is shown.

[0109] In addition to the structures of the first insulating structure 152b and the second insulating structure 162b, Figure 7A The first sensor 150b and the second sensor 160b can be connected to Figure 6 The first sensor 150a and the second sensor 160 are the same.

[0110] refer to Figure 7A and Figure 7BThe first insulating structure 152b may include a plurality of capillaries. The first insulating structure 152b may be formed to cover the upper surface of the first collector 151, and a portion of the upper surface of the first collector 151 may be exposed through the capillaries included in the first insulating structure 152b. Figure 7A The first sensor 150b is shown along Figure 7B A cross section taken along line IV-IV'. Figure 7A and Figure 7B One exposed surface 151 b of the plurality of exposed surfaces of the first collector 151 is shown.

[0111] Similar to the first insulating structure 152b, the second insulating structure 162b may include a plurality of capillaries and may be formed to cover the upper surface of the second collector 161. A portion of the upper surface of the second collector 161 may be exposed through the capillaries included in the second insulating structure 162b.

[0112] In various example embodiments, the first and second insulating structures 152b and 162b may be manufactured by respectively attaching prefabricated capillary plates to upper surfaces of the first and second collectors 151 and 161. The inventive concept is not limited thereto.

[0113] According to various example embodiments, a first aspect ratio determined as a ratio of the length to the diameter of the capillaries of the first insulating structure 152b may be different from a second aspect ratio determined as a ratio of the length to the diameter of the capillaries of the second insulating structure 162b.

[0114] The first sensor 150b can output a first signal S1b based on the amount of positive ions incident on the first capillary hole H11 within a directional range determined based on the first aspect ratio, and the second sensor 160b can output a second signal S2b based on the amount of positive ions incident on the second capillary hole H12 within a directional range determined based on the second aspect ratio. The differential amplifier 132 can determine a differential signal between the first signal S1b and the second signal S2b, and the sensing circuit 133 can measure a plasma parameter within a desired (and / or alternatively, predetermined) directional range based on the differential signal.

[0115] Will Figure 6 The sensor pairs in Figure 7A The sensor pairs in the Figure 7A The diameters of the exposed surfaces of the collectors 151 and 161 may be smaller than Figure 6 The diameter of the exposed surface of the collectors 151 and 161 in FIG. Therefore, the step difference between the upper surface of the collector and the upper surface of the insulating structure for achieving the same aspect ratio can be reduced. As a result, in the Z direction, including Figure 7AThe thickness of the plasma parameter measurement device of the sensor pair can be less than Figure 6 The sensor pairs are used to measure the thickness of the plasma parameters.

[0116] Figure 8 is a flow chart illustrating a method for measuring plasma parameters according to various example embodiments.

[0117] In S21, the plasma parameter measurement device may be located in the chamber space. The plasma parameter measurement device may include a Figures 5A to 7B The plasma parameter measurement device can be introduced into the chamber space in the same manner as the semiconductor substrate and can be loaded onto an electrostatic chuck in the chamber space. While the plasma parameter measurement device is in the chamber space, plasma processing can be performed.

[0118] In S22 , the plasma parameter measurement device may convert the amount of positive ions incident on the first collector of the first sensor into a first signal, and may convert the amount of positive ions incident on the second collector of the second sensor into a second signal.

[0119] As reference Figures 5A to 7B As described above, the aspect ratio of the first sensor may be different from the aspect ratio of the second sensor. Figure 5A In an embodiment, the aspect ratio of the first sensor may be "0," and the aspect ratio of the second sensor may be greater than "0." Depending on the aspect ratio of the first sensor and the aspect ratio of the second sensor, the range of directions in which positive ions are incident on the first sensor and the range of directions in which positive ions are incident on the second sensor may vary.

[0120] In S23, the plasma parameter measurement device may obtain a differential signal based on the first signal and the second signal. The differential signal may represent a plasma parameter within a directional range corresponding to the difference between the directional range of positive ions incident on the first sensor and the directional range of positive ions incident on the second sensor.

[0121] In S24, the plasma parameter measurement device may externally output the value of the plasma parameter (e.g., ion flux) within the desired (and / or alternatively, predetermined) directional range determined based on the differential signal. For example, the circuitry of the plasma parameter measurement device may include a wireless communication unit for externally outputting the plasma parameter. Furthermore, the plasma parameter may be externally received in real time and may be monitored over time during plasma processing.

[0122] Figures 9A to 9C is a diagram illustrating a sensor in detail according to various example embodiments.

[0123] Figure 9A and Figure 9B As shown in reference Figure 4 The structure of the third sensor 170. Figure 9A 1 shows the structure of the third sensor 170 when the actuator 175 is in the first state, Figure 9B The structure of the third sensor 170 is shown when the actuator 175 is in the second state. In various example embodiments, the actuator 175 may be implemented as a piezoelectric actuator that expands or contracts according to an applied voltage.

[0124] Reference Figure 9A When the actuator 175 is in the first state, the upper surface of the third collector 171 may be parallel to the reference Figure 4 The upper surface of the upper plate 110. The third sensor 170 may be housed in Figure 4 In the third hole H3 shown.

[0125] Reference Figure 9B When the actuator 175 is in the second state, the upper surface of the third collector 171 may be tilted to have a desired (and / or alternatively, predetermined) direction and a desired (and / or alternatively, predetermined) orientation according to the deformation of the actuator 175. The degree to which the upper surface of the third collector 171 is tilted may be changed according to the voltage applied to the actuator 175.

[0126] According to various example embodiments, based on the direction and orientation faced by the upper surface of the third collector 171, the third sensor 170 may measure plasma parameters within a desired (and / or alternatively, predetermined) directional range based on the aspect ratio of the third sensor 170 based on the diameter of the upper surface of the third collector 171 and the step difference between the upper surface of the third insulating structure 172 and the upper surface of the third collector 171.

[0127] The third collector 171 can collect positive ions incident within a desired (and / or alternatively, predetermined) directional range, the third signal pad 173 can convert the amount of collected positive ions into a signal, and the converted signal can be output to the circuit through the third signal line 174. The sensing device of the circuit can measure the plasma parameter within the desired (and / or alternatively, predetermined) directional range based on the converted signal.

[0128] According to various exemplary embodiments, when the plasma parameter measurement device 100 is introduced into or withdrawn from the chamber space, the third sensor 170 may be accommodated in the third hole H3 and may be tilted to have a desired (and / or alternatively, predetermined) direction and a desired (and / or alternatively, predetermined) orientation when measuring plasma parameters. Therefore, when introduced into or withdrawn from the chamber, the thickness of the plasma parameter measurement device 100 may be reduced, and when measuring plasma parameters, plasma parameters in the lateral direction may be effectively measured.

[0129] Figure 9C A third sensor 170a is shown. In addition to the structure of the third insulating structure 172a, Figure 9C The third sensor 170a can be used with reference Figure 9A and Figure 9B The third sensor 170 described is the same.

[0130] refer to Figure 9C , the third insulating structure 172a may include a plurality of capillaries. The structure of the third insulating structure 172a may be similar to that of the reference Figure 7A and Figure 7B The structure of the first insulating structure 152b and the structure of the second insulating structure 162b are described.

[0131] According to various example embodiments, based on the direction and orientation that the upper surface of the third collector 171 faces, the third sensor 170a can measure plasma parameters within a desired (and / or alternatively, predetermined) directional range based on the aspect ratio of the third sensor 170a, which is determined as the ratio of the length of the capillary of the third insulating structure 172a relative to the diameter.

[0132] Figure 10A and Figure 10B is a diagram illustrating a sensor in detail according to various example embodiments.

[0133] Figure 10A As shown in reference Figure 4 The structure of the fourth sensor 180. The fourth sensor 180 can be set as shown in FIG. Figure 4 The fourth collector 181 of the fourth sensor 180 may have an outer surface exposed to the plasma. The outer surface of the fourth collector 181 may be arranged to face a desired (and / or alternatively, predetermined) orientation φ in a direction parallel to the upper surface of the upper plate 110. The direction range of the plasma parameter measurable by the fourth sensor 180 may include a range from -θ to θ.

[0134] According to various example embodiments, based on the direction and orientation that the outer side surface of the fourth collector 181 faces, the fourth sensor 180 may measure plasma parameters within a desired (and / or alternatively, predetermined) directional range based on the aspect ratio of the fourth sensor 180 based on the diameter of the outer side surface of the fourth collector 181 and the step difference between the outer side surface of the fourth insulating structure 182 and the outer side surface of the fourth collector 181.

[0135] Figure 10A The case where the step difference between the outer surface of the fourth insulating structure 182 and the outer surface of the fourth collector 181 is greater than "0" is shown, but the present inventive concept is not limited thereto. The step difference between the outer surface of the fourth insulating structure 182 and the outer surface of the fourth collector 181 may be "0".

[0136] The fourth collector 181 can collect positive ions incident within a desired (and / or alternatively, predetermined) direction range. A fourth signal pad 183 formed on the inner surface of the fourth collector 181 facing the inner side of the plasma parameter measurement device 100 can convert the amount of collected positive ions into a signal, and the converted signal can be output to the circuit through a fourth signal line 184. The sensing device of the circuit can measure the plasma parameter within the desired (and / or alternatively, predetermined) direction range based on the converted signal.

[0137] Figure 10B A fourth sensor 180a is shown. In addition to the structure of the fourth insulating structure 182a, Figure 10B The fourth sensor 180a may have a Figure 10A The fourth sensor 180 has the same structure as described above.

[0138] refer to Figure 10B , the fourth insulating structure 182a may include a plurality of capillaries. The structure of the fourth insulating structure 182a may be similar to that of the reference Figure 7A and Figure 7B The structure of the first insulating structure 152b and the structure of the second insulating structure 162b are described.

[0139] According to various example embodiments, based on the direction and orientation faced by the upper surface of the fourth collector 181, the fourth sensor 180a may measure plasma parameters within a desired (and / or alternatively, predetermined) directional range based on the aspect ratio of the fourth sensor 180a, which is determined as the ratio of the length of the capillary of the fourth insulating structure 182a relative to the diameter.

[0140] As reference Figures 4 to 10BAs described above, the plasma parameter measurement device 100 can be arranged so that the upper surface of the collector that collects incident positive ions is parallel to the surface of the plasma parameter measurement device 100 on which the collector is arranged, and a plasma parameter in the lateral direction can be measured based on the positive ions collected by the collector. The structure in which the collector is arranged parallel to the surface to which the sensor is attached can reduce the maximum thickness of the plasma parameter measurement device 100. Therefore, the plasma parameter measurement device 100 according to various exemplary embodiments can be introduced into a chamber space and can measure plasma parameters in the lateral direction in situ during plasma processing.

[0141] Despite Figures 4 to 10B , the plurality of sensors 150 to 180 generate current signals according to the amount of positive ions incident on the upper surface of the collector, but the present inventive concept is not limited thereto. For example, the plurality of sensors in the plasma parameter measurement apparatus according to various example embodiments can measure plasma parameters by converting positive ions incident on the upper surface of the collector into electrical signals or optical signals.

[0142] The plasma parameters measurable by the plurality of sensors 150 to 180 are not limited to ion flux. For example, the plasma parameters may also include parameters that can be determined by incident ions and have directionality, such as electron temperature, plasma density, ion energy distribution, etc.

[0143] The plasma parameter measuring device may include a plurality of reference Figures 4 to 10B At least one sensor, the third sensor, or the fourth sensor in the sensor pair. Multiple sensors may be disposed at multiple locations of the plasma parameter measurement device, and the plasma parameter measurement device may measure the distribution of plasma parameters according to the region of the plasma parameter measurement device based on signals acquired from the multiple sensors.

[0144] Figure 11A and Figure 11B are diagrams illustrating a plasma parameter measurement apparatus and plasma parameter distribution according to various example embodiments.

[0145] Figure 11A is a diagram illustrating a plasma parameter measurement apparatus 200 according to various example embodiments in an XY plane. Figure 11B A plasma parameter distribution 300 of the plasma parameter measurement device 200 is shown.

[0146] In various exemplary embodiments, the plasma parameter measurement apparatus 200 may include a sensor pair SP including a first sensor 250 and a second sensor 260, a third sensor 270, and a fourth sensor 280. The sensor pair SP may correspond to a reference sensor. Figures 5A to 7BThe sensor pair described above, the third sensor 270 may correspond to the reference Figures 9A to 9C The third sensor described above and the fourth sensor 280 may correspond to the reference Figure 10A and Figure 10B The fourth sensor is described.

[0147] According to various example embodiments, a plurality of sensors may be arranged in a desired (and / or alternatively, predetermined) pattern at a plurality of locations on the upper surface and the side surface of the plasma parameter measurement apparatus 200. According to various example embodiments, the plurality of sensors may measure plasma parameters at a plurality of locations in a plasma processing environment, and a plasma parameter distribution may be measured based on the plasma parameters measured at the plurality of locations.

[0148] The plasma parameter measurement apparatus 200 may include a plurality of sensor circuits and a central controller within the circuits. The plurality of sensor circuits measure plasma parameters based on signals acquired from the plurality of sensors, and the central controller may collect the plasma parameter measurements generated from the plurality of sensor circuits to determine a plasma parameter distribution.

[0149] Figure 11B The distribution diagram 300 shown in FIG3 can represent the distribution of plasma parameters (e.g., ion flux). In the distribution diagram 300, the area shown with a darker pattern can indicate an area with a higher ion flux. In various example embodiments, the plasma parameter measurement device 200 can use the same type of sensor to measure the ion flux within the same directional range for each position. In addition, the distribution diagram 300 showing the size of the ion flux at each position within the directional range can be generated in a central controller or externally based on the ion flux at each position.

[0150] Figure 12 is a flow chart illustrating a method for measuring a plasma parameter distribution according to various example embodiments.

[0151] In S31, a plasma parameter measurement device may be located in the chamber space. As described with reference to FIG. 11 , the plasma parameter measurement device may have a plurality of sensors arranged in a desired (and / or alternatively, predetermined) pattern at a plurality of locations on the upper surface and the side surface. As previously described, the plasma parameter measurement device may be introduced into the chamber space in the same manner as the semiconductor substrate and may be loaded onto an electrostatic chuck in the chamber space. When the plasma parameter measurement device is located in the chamber space, plasma processing may be performed.

[0152] In S32 , the plurality of sensors of the plasma parameter measurement device may convert the amount of positive ions incident on the collector into a plurality of signals.

[0153] In S33, the plasma parameter measurement device may determine a plasma parameter within at least one directional range based on the multiple signals. For example, based on the multiple signals converted from the multiple sensors, sensing circuitry connected to the multiple sensors may determine a plasma parameter within a desired (and / or, alternatively, predetermined) directional range at each of the multiple positions of the plasma parameter measurement device.

[0154] In S34, the plasma parameter measurement device may output the plasma parameter distribution in the at least one directional range. For example, a central controller of the plasma parameter measurement device may collect plasma parameters determined at multiple locations and measure the plasma parameter distribution in the at least one directional range. Furthermore, the plasma parameter measurement device may output the plasma parameter distribution externally and monitor the plasma parameters over time during plasma processing.

[0155] According to various example embodiments, the distribution of plasma parameters within a desired (and / or alternatively, predetermined) directional range (e.g., in the lateral direction) may be monitored, and it may be determined whether an etching operation in the lateral direction in the chamber can be uniformly performed for each region of the substrate, etc. As a result, plasma parameters of a semiconductor manufacturing process may be monitored and may have improved control, and thus plasma processing quality may be improved, which may improve the quality of the manufactured semiconductor devices.

[0156] Figure 13 is a diagram illustrating a plasma parameter measurement system according to various example embodiments.

[0157] The plasma parameter measurement system may include a plasma parameter measurement device 400 and an external server 500 .

[0158] The plasma parameter measurement device 400 may include circuitry and a plurality of sensors 450 , 460 , 470 , and 480 . The circuitry may include a differential amplifier 432 , a plurality of sensing circuits 433 , 434 , and 435 , a central controller 436 , a wireless communication unit 437 , and a power supply unit 438 .

[0159] The differential amplifier 432 may output a differential signal between the first signal from the first sensor 450 and the second signal from the second sensor 460 to the sensing circuit 433. The first sensor 450 and the second sensor 460 may correspond to the reference Figures 5A to 7B The first sensor and the second sensor are described.

[0160] For example, since first sensor 450 and second sensor 460 can each have a collector parallel to the upper surface of the upper plate, positive ions perpendicular to the upper surface of the upper plate will generally be incident on the collector. Since the aspect ratio of first sensor 450 differs from that of second sensor 460, the range of incident directions of the positive ions incident on the collector can be different. Sensing circuit 433 can use a differential signal to remove the vertical component and measure plasma parameters in the lateral direction.

[0161] The sensing circuit 434 can use the signal from the third sensor 470 to measure the plasma parameter in the lateral direction. The third sensor 470 can correspond to the reference Figures 9A to 9C The third sensor 470 may be tilted by an actuator in the chamber space and may thus measure a plasma parameter within a desired (and / or alternatively, predetermined) range of directions at a desired (and / or alternatively, predetermined) orientation.

[0162] The sensing circuit 435 can use the signal from the fourth sensor 480 to measure the plasma parameter in the lateral direction. The fourth sensor 480 can correspond to the reference Figure 10A and Figure 10B The fourth sensor 480 may be disposed on a side surface of the plasma parameter measurement device 400 and may thus measure plasma parameters within a desired (and / or alternatively, predetermined) directional range in a direction parallel to the upper surface of the upper plate.

[0163] In various example embodiments, the plasma parameter measurement apparatus 400 may include at least one sensor, the third sensor 470, or the fourth sensor 480 of the sensor pair including the first sensor 450 and the second sensor 460. In addition, a plurality of sensors of at least one type may be included.

[0164] Central controller 436 generally controls plasma parameter measurement apparatus 400. For example, it can obtain the values ​​of plasma parameters measured by sensing circuits 433, 434, and 435 and measure a plasma parameter distribution based on the values ​​of the plasma parameters. Furthermore, central controller 436 can control the measurement direction range of third sensor 470 by controlling an actuator of third sensor 470.

[0165] The wireless communication unit 437 may transmit the plasma parameter measurement value or the plasma parameter distribution to the external server 500 .

[0166] The power supply unit 438 may supply power necessary for the operation of the plasma parameter measurement apparatus 400. For example, the power supply unit 438 may include a battery for supplying power to the plasma parameter measurement apparatus 400 in a plasma processing environment.

[0167] The external server 500 may receive the plasma parameters or the distribution of the plasma parameters monitored from the plasma parameter measurement device 400 and may analyze the plasma process.

[0168] A plasma parameter measurement apparatus according to various example embodiments may use an insulating structure to surround a collector into which positive ions are incident to measure plasma parameters having directivity within a desired (and / or alternatively, predetermined) direction range.

[0169] In the plasma parameter measurement apparatus according to various exemplary embodiments, since the upper surface of the collector that collects positive ions is parallel to the surface of the plasma parameter measurement apparatus on which the collector is disposed, the maximum thickness of the plasma parameter measurement apparatus can be reduced. As a result, the plasma parameter measurement apparatus can be manufactured to have a size and shape similar to that of a substrate to be processed in a plasma processing apparatus, and can measure plasma parameters while being loaded into a chamber space.

[0170] One or more of the elements disclosed above may include a processing circuit system (such as hardware including logic circuits; a hardware / software combination, such as a processor that executes software; or a combination thereof) or be implemented in a processing circuit system. For example, the processing circuit system may more specifically include, but is not limited to, a central processing unit (CPU), an arithmetic logic unit (ALU), a digital signal processor, a microcomputer, a field programmable gate array (FPGA), a system on a chip (SoC), a programmable logic unit, a microprocessor, an application specific integrated circuit (ASIC), etc.

[0171] Problems to be solved by the present inventive concept are not limited to the above-mentioned problems, and other problems not mentioned will be clearly understood by those skilled in the art from the following description.

[0172] While various example embodiments have been shown and described above, it will be apparent to those skilled in the art that modifications and variations are possible without departing from the scope of the inventive concept as defined by the appended claims.

Claims

1. A plasma parameter measuring device, comprising: an upper plate and a lower plate comprising a first material, wherein the first material is included in a semiconductor substrate to be subjected to plasma; A first sensor comprising: a first collector comprising said first material, and a first insulating structure surrounding a side surface of the first collector in a first hole in the upper plate and exposing at least a portion of an upper surface of the first collector, and wherein a step difference between an upper surface of the first insulating structure and an upper surface of the first collector has a first aspect ratio relative to a diameter of an exposed surface of the first collector; A second sensor comprising: a second collector comprising said first material, and a second insulating structure surrounding a side surface of the second collector in a second hole in the upper plate and exposing at least a portion of an upper surface of the second collector, and wherein a step difference between an upper surface of the second insulating structure and an upper surface of the second collector has a second aspect ratio relative to a diameter of an exposed surface of the second collector, the second aspect ratio being different from the first aspect ratio; and a circuit substrate located between the upper plate and the lower plate, The circuit substrate includes circuitry configured to measure a plasma parameter within a range of directions based on a differential signal between a first signal from the first sensor and a second signal from the second sensor.

2. The plasma parameter measuring device according to claim 1, wherein: The first aspect ratio is "0", and the second aspect ratio has a value greater than "0".

3. The plasma parameter measuring device according to claim 1, wherein: The first aspect ratio and the second aspect ratio each have a value greater than "0".

4. The plasma parameter measuring device according to claim 1, wherein The first insulating structure comprises: a first capillary plate on an upper surface of the first collector, and a plurality of first capillaries exposing a portion of the upper surface of the first collector, and The second insulating structure includes: a second capillary plate on an upper surface of the second collector, and a plurality of second capillaries exposing a portion of the upper surface of the second collector, and The second capillaries and the first capillaries have different diameter-to-length ratios.

5. The plasma parameter measuring device according to claim 1, wherein The first sensor further includes: a first signal pad configured to generate a first signal according to an amount of positive ions incident on an upper surface of the first collector, and The second sensor further includes: The second signal pad is configured to generate a second signal according to the amount of positive ions incident on the upper surface of the second collector.

6. The plasma parameter measuring device according to claim 5, wherein: The first signal pad and the second signal pad include at least one of gold (Au) and tungsten (W).

7. The plasma parameter measurement device according to claim 1, further comprising: a filling material filled between the upper plate and the circuit substrate; and The filling material is filled between the lower plate and the circuit substrate.

8. The plasma parameter measuring device according to claim 1, wherein: The first insulating structure and the second insulating structure include at least one of quartz and glass.

9. The plasma parameter measuring device according to claim 1, wherein: The first material includes silicon (Si).

10. The plasma parameter measuring device according to claim 1, wherein: The circuit includes a wireless communication unit configured to transmit a measurement result of the plasma parameter to the outside.

11. The plasma parameter measuring device according to claim 1, wherein: The upper plate and the lower plate have a diameter of 100 mm to 500 mm, and The plasma parameter measurement device has a thickness of 0.5 mm to 3 mm in a direction perpendicular to the upper surface of the upper plate.

12. The plasma parameter measurement device according to claim 1, further comprising: a third sensor in a third hole in the upper plate; The third sensor includes: a third collector comprising said first material, a third insulating structure surrounding a side surface of the third collector and exposing at least a portion of an upper surface of the third collector, and The third insulating structure has a step difference between an upper surface of the third insulating structure and an upper surface of the third collector; a third signal pad contacting a lower surface of the third collector; and An actuator controls an angle of an upper surface of the third collector.

13. The plasma parameter measurement device according to claim 1, further comprising: a fourth sensor on a side surface of the circuit substrate; and The fourth sensor includes: a fourth collector comprising said first material, The fourth collector comprises: an inner surface facing the circuit substrate, an outer surface, which is opposite to the inner surface, a fourth insulating structure surrounding the fourth collector and exposing at least a portion of an outer side surface of the fourth collector, The fourth insulating structure has a step difference between an outer surface of the fourth insulating structure and an outer surface of the fourth collector, and A fourth signal pad contacts the inner surface of the fourth collector.

14. A plasma parameter measuring device, comprising: an upper plate and a lower plate comprising a first material, wherein the first material is included in a semiconductor substrate to be subjected to plasma; A plurality of sensor pairs, each of the plurality of sensor pairs comprising: A first sensor comprising: a first collector comprising said first material, a first insulating structure surrounding a side surface of the first collector, and the first insulating structure having an upper surface of the first insulating structure in the hole in the upper plate that is coplanar with an upper surface of the first collector; A second sensor comprising: a second collector comprising said first material, and a second insulating structure surrounding a side surface of the second collector in the hole in the upper plate and having an upper surface protruding relative to an upper surface of the second collector; and A circuit substrate, located between the upper plate and the lower plate, comprising: circuitry configured to measure a distribution of a plasma parameter within a range of directions on an upper surface of the upper plate, The measurement of the distribution of the plasma parameter is based on a differential signal between signals acquired by the first sensor and the second sensor in each of the plurality of sensor pairs.

15. The plasma parameter measurement device according to claim 14, further comprising: A plurality of third sensors, each of the plurality of third sensors comprising: a third collector comprising said first material, a third insulating structure surrounding the third collector, and The third insulating structure has a step difference between an outer side surface of the third insulating structure and an outer side surface of the third collector; and The plurality of third sensors are on the side surface of the circuit substrate, and wherein the circuit is further configured to measure the distribution of plasma parameters within a range of directions on a side surface of the plasma parameter measurement device, and The measurement of the distribution of the plasma parameter in the directional range on the side surface of the plasma parameter measurement device is based on the signal acquired by each of the plurality of third sensors.

16. The plasma parameter measuring device according to claim 14, wherein: The circuit includes a wireless communication unit configured to transmit a measurement result of the distribution of the plasma parameter to the outside.

17. A plasma parameter measuring device, comprising: an upper plate and a lower plate comprising a first material, wherein the first material is included in a semiconductor substrate to be subjected to plasma; a circuit substrate between the upper plate and the lower plate and including a circuit; as well as A sensor comprising: a collector comprising the first material, and The collector comprises: an inner surface facing the circuit substrate, an outer surface, which is opposite to the inner surface, an insulating structure surrounding the collector and exposing at least a portion of an outer side surface of the collector, and a signal pad on a side surface of the circuit substrate in contact with an inner side surface of the collector, and The circuit is configured to measure a plasma parameter within a range of directions based on a signal from the signal pad.

18. The plasma parameter measuring device according to claim 17, wherein: The insulating structure has a step difference with an outer surface of the collector.

19. The plasma parameter measuring device according to claim 17, wherein: The direction range includes a direction parallel to the upper plate.

20. The plasma parameter measurement device according to claim 17, wherein The first material includes silicon (Si), and The insulating structure includes at least one of quartz and glass.

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