Substrate through hole manufacturing method, substrate and device
By using laser dotting to form a pre-processing area on the glass substrate and utilizing the design of a ring structure, the accuracy problem in the production of through holes with different apertures is solved, and high-precision through-hole production is achieved.
Patent Information
- Application Number
- CN202510866095.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-06-25
- Publication Date
- 2025-09-26
AI Technical Summary
The existing technology has difficulty in ensuring accuracy when making through holes of different diameters on a glass substrate, especially when etching large holes requires more time, which affects the accuracy requirements of subsequent processes.
Laser dotting is used to form pre-processed areas of the first and second regions on the substrate, a smaller first aperture is used to enclose a ring structure with a second aperture, and through holes of different apertures are made on the substrate through the same material removal process.
The method realizes the simultaneous production of through holes with different apertures on a glass substrate, avoids the precision problem caused by the simultaneous production of large holes and small holes, and ensures the production precision of the through holes.
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Figure CN120709150A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of advanced semiconductor packaging technology, and in particular to a method for manufacturing a through-substrate hole, a substrate, and a device. Background Art
[0002] A through-glass via (TGV) is an electrical interconnect structure that passes vertically through a glass substrate, similar to a through-silicon via (TSV), but capable of three-dimensional interconnection. TGV 3D interconnect technology offers excellent electrical and optical properties, good mechanical stability, and low cost, making it a promising alternative to organic through-hole interconnects. TGV holds broad application prospects in advanced packaging, integrated passive devices, and optoelectronic device integration, and is considered a key technology for next-generation advanced packaging.
[0003] One of the main difficulties restricting the development of through-glass via technology is the through-glass via forming technology. Currently, in some cases, it is necessary to produce holes of different aperture sizes on a glass substrate. For example, it is necessary to present multiple through-glass vias (TGV holes) with smaller apertures and a positioning hole with larger aperture on a glass substrate. During the production process, the same solution is used for etching. Since etching large holes requires more time, it is difficult to meet the hole precision requirements, which will affect the subsequent glass substrate-related processes. Summary of the Invention
[0004] The present application proposes a method for manufacturing a through-hole in a substrate, a substrate, and a device for manufacturing through-holes of different diameters on a substrate while ensuring the accuracy of the through-holes.
[0005] The embodiment of the present application is implemented as follows: a method for manufacturing a through-hole in a substrate is provided, wherein a surface of the substrate includes a first area and a second area, and the method includes:
[0006] Performing pretreatment on the first region to form a first pretreatment zone, the first pretreatment zone is used to form a first through hole, and the first through hole has a first aperture;
[0007] Performing pretreatment in the second region to form a plurality of second pretreatment zones, the plurality of second pretreatment zones being used to form a plurality of third through holes, the third through holes having a third aperture, the plurality of third through holes being sequentially arranged and surrounding an annular structure having a second aperture, the third aperture being the same as or substantially the same as the first aperture, and the second aperture being larger than the first aperture;
[0008] The first pre-processed area and the plurality of second pre-processed areas are subjected to material removal by adopting the same material removal process, so that the first pre-processed area forms a first through hole, and the second area forms a second through hole with a second aperture.
[0009] Furthermore, the material removal process is one or more of an etching process, a corrosion process or a gasification process.
[0010] Further, performing pretreatment on the first region to form a first pretreatment zone includes: performing modification treatment on the first region by laser dotting to form the first pretreatment zone;
[0011] Performing pretreatment on the second area to form a plurality of second pretreatment areas includes: performing modification treatment on the second area by laser dotting to form a plurality of second pretreatment areas.
[0012] Further, performing pretreatment on the first region to form a first pretreatment zone includes: performing modification treatment on the first region using a laser to form the first pretreatment zone;
[0013] Performing pretreatment on the second area to form a plurality of second pretreatment areas includes: performing modification treatment on the plurality of second pretreatment areas using laser to form the plurality of second pretreatment areas.
[0014] Further, pretreatment is performed in the first area to form a first pretreatment area, and pretreatment is performed in the second area to form a plurality of second pretreatment areas, including:
[0015] forming a mask layer on the substrate;
[0016] removing the mask layer on the first area to form a first pre-processing area;
[0017] Part of the mask layer on the second area is removed to form a plurality of second pre-processing areas.
[0018] Further, pretreatment is performed in the first area to form a first pretreatment area, and pretreatment is performed in the second area to form a plurality of second pretreatment areas, including:
[0019] forming a photosensitive coating on a substrate;
[0020] Covering the photosensitive coating with a mask and performing an exposure process; the mask is used to expose the first area and a portion of the second area during the exposure process;
[0021] A developing solution is used to dissolve the photosensitive coating after exposure treatment, so as to form a first pre-treatment area in the first area and a plurality of second pre-treatment areas in the second area.
[0022] Furthermore, the first through-hole is used to realize electrical interconnection between chips or between packaging layers, and the second through-hole is a positioning through-hole in subsequent processes of the substrate.
[0023] In a second aspect, a substrate is provided, characterized in that the substrate has a first through hole and a second through hole, and the first through hole and the second through hole are manufactured using the above-mentioned method for manufacturing a substrate through hole.
[0024] Furthermore, the second through hole has a diameter ranging from 0.5 to 3 mm.
[0025] In a third aspect, a device for manufacturing a through-hole in a substrate is provided, characterized in that it includes:
[0026] a laser head, configured to respond to a control signal and emit laser light;
[0027] a control module coupled to the laser head, configured to control the laser head to emit laser light to perform a modification treatment on a first area on the substrate to form a first pre-treated area, wherein the first pre-treated area is configured to form a first through hole having a first aperture;
[0028] It is also used to control the laser head to emit laser to modify the second area on the substrate to form a plurality of second pre-processed areas, and the plurality of second pre-processed areas are used to form a plurality of third through holes; the third through holes have a third aperture, and the plurality of third through holes are arranged in sequence and form a ring structure with a second aperture, the third aperture is the same as or substantially the same as the first aperture, and the second aperture is larger than the first aperture;
[0029] The driving module is coupled to the control module, and is used to receive a signal from the control module and drive the substrate to move into the etching solution for etching, so that a first through hole is formed in the first pre-treated area and a second through hole with a second aperture is formed in the second area.
[0030] In the method for making a through hole in a substrate provided in the present application, a smaller first aperture is used to enclose an annular structure with a second aperture. In this way, when making a through hole, it is only necessary to make a through hole with an aperture of the first aperture, so that a first through hole with the first aperture and a second through hole with the second aperture can be made on the substrate. Since the aperture faced when making the hole is a single aperture, the same solution can be used to etch for the same length of time to make the first through hole and the second through hole with different apertures, avoiding the situation where the accuracy of the through hole is affected because the large hole and the small hole cannot be made at the same time when making through holes with different apertures. BRIEF DESCRIPTION OF THE DRAWINGS
[0031] Figure 1 A schematic flow chart of an embodiment of a method for fabricating a through-hole in a substrate provided in this application;
[0032] Figure 2 A schematic diagram of a manufacturing process of an embodiment of a method for manufacturing a through-hole in a substrate provided by the present application;
[0033] Figure 3 A schematic diagram of a manufacturing process of an embodiment of a method for manufacturing a through-hole in a substrate provided by the present application;
[0034] Figure 4 A schematic diagram of a manufacturing process of an embodiment of a method for manufacturing a through-hole in a substrate provided by the present application;
[0035] Figure 5 This is a structural schematic diagram of an embodiment of a device for making a through-hole in a substrate provided in this application.
[0036] Reference numerals:
[0037] 100 - substrate, 110 - first region, 111 - first pre-treatment area, 112 - first through hole, 120 - second region, 121 - second pre-treatment area, 122 - third through hole, 123 - ring structure, 124 - second through hole, 200 - mask layer, 300 - photosensitive coating, 400 - mask. DETAILED DESCRIPTION
[0038] In order to make the purpose, technical solutions and advantages of the present application more clear, the present application is further described in detail below with reference to the accompanying drawings and embodiments. Examples of embodiments are shown in the accompanying drawings, in which the same or similar reference numerals throughout represent the same or similar elements or elements with the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application and are not to be construed as limiting the present application. In addition, it should be understood that the specific embodiments described herein are merely used to explain the present application and are not intended to limit the present application.
[0039] In the description of this application, it should be understood that the terms "length", "width", "up", "down", "left", "right", "horizontal", "top", "bottom", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, they should not be understood as limitations on this application.
[0040] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features being referred to. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more features. Throughout the description of this application, "plurality" means two or more, unless otherwise specifically defined.
[0041] In the description of this application, it should be noted that, unless otherwise expressly specified or limited, the terms "installed," "connected," and "connected" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; they can refer to mechanical connections, electrical connections, or mutual communication; they can refer to direct connections or indirect connections through an intermediate medium; they can refer to internal communication between two components or the interaction between two components. Those skilled in the art will understand the specific meanings of the above terms in this application based on specific circumstances.
[0042] In this application, unless otherwise expressly specified or limited, a first feature being "above" or "below" a second feature may include the first and second features being in direct contact, or may include the first and second features being in contact not directly but through another feature between them. Moreover, a first feature being "above," "above," and "above" a second feature may include the first feature being directly above or obliquely above the second feature, or may simply mean that the first feature is higher in level than the second feature. A first feature being "below," "below," and "below" a second feature may include the first feature being directly below or obliquely below the second feature, or may simply mean that the first feature is lower in level than the second feature.
[0043] The disclosure below provides many different embodiments or examples for realizing the different structures of the present application. In order to simplify the disclosure of the present application, the components and settings of specific examples are described below. Of course, they are merely examples, and the purpose is not to limit the present application. In addition, the present application may repeat reference values and / or reference letters in different examples, and such repetition is for the purpose of simplicity and clarity, and does not itself indicate the relationship between the various embodiments and / or settings discussed. In addition, the present application provides various specific process and material examples, but those skilled in the art will appreciate the application of other processes and / or the use of other materials.
[0044] The present application provides a method for manufacturing a through-hole in a substrate, providing a substrate, wherein the surface of the substrate includes a first area and a second area, and the method includes: performing pretreatment in the first area to form a first pretreatment area, the first pretreatment area being used to form a first through-hole, the first through-hole having a first aperture; performing pretreatment in the second area to form multiple second pretreatment areas, the multiple second pretreatment areas being used to form multiple third through-holes, the third through-holes having a third aperture, the multiple third through-holes being arranged in sequence and surrounding an annular structure having a second aperture, the third aperture being the same or substantially the same as the first aperture, and the second aperture being larger than the first aperture. Furthermore, the first pretreatment area and the multiple second pretreatment areas are subjected to the same material removal process to remove material, so that the first pretreatment area forms a first through-hole, and the second area forms a second through-hole having a second aperture.
[0045] In the method for making a through hole in a substrate provided in the present application, a smaller first aperture is used to enclose an annular structure with a second aperture. In this way, when making a through hole, it is only necessary to make a through hole with an aperture of the first aperture, so that a first through hole with the first aperture and a second through hole with the second aperture can be made on the substrate. Since the aperture faced when making the hole is a single aperture, the same solution can be used to etch for the same length of time to make the first through hole and the second through hole with different apertures, avoiding the situation where the accuracy of the through hole is affected because the large hole and the small hole cannot be made at the same time when making through holes with different apertures.
[0046] like Figure 1 As shown, one embodiment of the present application provides a method for manufacturing a through-hole in a substrate, comprising:
[0047] S1100 , providing a substrate 100 .
[0048] Among them, the surface of the substrate 100 includes a first area 110 and a second area 120. The first area 110 is used to make a first through hole 112 with a first aperture, and the second area 120 is used to make a second through hole 124 with a second aperture. The second aperture is larger than the first aperture. The first through hole 112 is a TGV hole, which is used to achieve electrical interconnection between chips or packaging layers. The second through hole 124 is a positioning through hole in the subsequent process of the substrate 100.
[0049] Optionally, the size of the second through hole 124 ranges from 0.5 mm to 3 mm, and the second through hole 124 is an aperture size that can be recognized by the camera. Preferably, the size of the second through hole 124 is 0.5 mm, 0.8 mm, 1 mm, 1.2 mm, 1.5 mm, 2 mm, 3 mm, etc.
[0050] Optionally, the size of the first through hole 112 ranges from 10 to 100 microns. Preferably, the size of the first through hole 112 is 10 microns, 20 microns, 50 microns, 60 microns, 80 microns, 100 microns, etc.
[0051] like Figure 2 As shown in (a) in FIG, the surface of the substrate 100 includes a first region 110 and a second region 120 in a rectangular shape. Optionally, the first region 110 and the second region 120 may also be circular regions, elliptical regions or irregular regions, etc. Figure 2 The diagram does not constitute a limitation on the shape of the regions in the embodiments of the present application.
[0052] In the embodiments provided in the present application, the substrate 100 is taken as a glass substrate for illustration. In other embodiments, the substrate 100 may also be a ceramic substrate or a silicon substrate, etc., and the embodiments of the present application do not specifically limit this.
[0053] In some embodiments, the substrate 100 may be a rectangular plate structure. Of course, the substrate 100 may also be a circular, irregular or other shaped plate structure, which is not specifically limited in the present embodiment.
[0054] As a possible implementation manner, the thickness range of the substrate 100 is 5μm-10mm. Preferably, the thickness range of the substrate 100 is 200μm-500μm. For example, the thickness range of the substrate 100 is 250μm, 300μm, 350μm, 400μm or 450μm, etc. This embodiment of the present application does not specifically limit this.
[0055] S1200 , performing laser modification processing on the first region 110 on the substrate 100 .
[0056] As a possible implementation method, the laser head is controlled to perform a laser dot operation in the first area 110 of the substrate 100, such as Figure 2 As shown in (b), a plurality of laser-modified regions are formed in the first region on the substrate 100. Each laser-modified region has the same size as the dot of the laser head and has a first aperture.
[0057] The laser modification process performed on the first region 110 of the substrate 100 is a pre-processing process for forming a first pre-processing zone 111 in the first region 110 . The first pre-processing zone 111 is used to form a first through hole 112 .
[0058] Optionally, the laser modification treatment may specifically include: using a high-precision laser (such as an ultraviolet laser or a femtosecond laser) to irradiate the first region 110 to reduce the chemical stability of the glass, thereby forming a modified first pre-treated region 111 .
[0059] Laser modification is an advanced laser processing technology, mainly used for internal structure modification or cutting of transparent or translucent materials (such as glass, sapphire, crystal, etc.). Its core principle is to focus ultrashort pulse laser (such as picosecond and femtosecond laser) inside the material to induce nonlinear absorption effect, thereby achieving precise changes in the internal structure without damaging the surface of the material.
[0060] In some embodiments, the pre-processing operation performed in the first area 100 may also be, for example, a laser modification operation, a mask processing operation, an exposure and development operation, etc., to prepare for the subsequent removal of the material of the substrate 100 in the first pre-processing area 111 through a material removal process.
[0061] S1300 , performing laser modification processing on the second region 120 on the substrate 100 .
[0062] As a possible implementation method, the laser head is controlled to perform a laser dot operation on the second area 120 on the substrate 100, so that a plurality of laser modified areas are formed in the second area 120 on the substrate 100. Figure 2 As shown in (b), multiple laser-modified areas form a ring structure 123 with a second aperture. Each laser-modified area is the same size as a dot of the laser head and has a first aperture.
[0063] Among them, the above-mentioned laser modification operation on the second area 120 of the substrate 100 is a pretreatment operation of forming multiple second pretreatment areas 121 in the second area 120, and the second pretreatment areas 121 are used to form third through holes 122. The multiple third through holes 122 are arranged in sequence and surrounded by a ring structure 123 with a second aperture.
[0064] The third through hole 122 has a third aperture, which is smaller than the second aperture and is the same or substantially the same as the first aperture, that is, the difference between the third aperture and the first aperture is smaller than a preset threshold.
[0065] In some embodiments, as described in the above step S1200, the pre-processing operation performed in the second area 120 can also be exemplarily a laser modification operation, a mask processing operation, an exposure and development operation, etc., which is used to prepare for the subsequent removal of the material of the substrate 100 in the second pre-processing area 121 through a material removal process.
[0066] In some embodiments, the pre-processing operation method performed on the second area 120 in the above step S1300 is consistent with the pre-processing operation method performed on the first area 110 in the above step S1200. This ensures that when the material removal process is subsequently adopted, the materials of the first pre-processing area 111 and multiple second pre-processing areas 121 can be removed simultaneously to ensure the production accuracy of the through hole.
[0067] Optionally, the laser modification treatment may specifically be: using a high-precision laser (such as an ultraviolet laser or a femtosecond laser) to irradiate the second region 120 to reduce the chemical stability of the glass, and forming a plurality of modified second pre-treated areas 121 in the second region 120 .
[0068] When performing a laser modification operation, the aperture and shape can be controlled by adjusting the laser parameters (energy, frequency, etc.). In the embodiment of the present application, the aperture corresponding to a single laser modification operation can be the same as the first aperture, that is, a single irradiation treatment in the first area 110 can obtain a first pre-treatment area 111 with an aperture size of the first aperture.
[0069] S1400 , placing the substrate 100 in a chemical solution for etching to form a first through hole 112 and a second through hole 124 .
[0070] As a possible implementation method, after forming a first pretreatment area 111 in the first area 110 and a second pretreatment area 121 in the second area 120, the substrate 100 is placed in a chemical solution for corrosion to remove the material of the substrate 100 in the first pretreatment area 111 and the second pretreatment area 121, so that the substrate 100 forms a first through hole 112 in the first area 110 and a second through hole 124 in the second area 120.
[0071] Optionally, the liquid medicine may be an acidic or alkaline solution (such as a hydrofluoric acid solution). Since the substrate 100 in the first pre-treatment area 111 and the second pre-treatment area 121 is modified by laser, it can be etched out in the liquid medicine. Figure 2 As shown in (c), after the materials of the first pre-treated area 111 and the second pre-treated areas 121 are removed, the first through hole 112 is formed in the first pre-treated area 111, and the second through hole 124 with the second aperture is formed in the second area 120.
[0072] Placing the substrate 100 in a chemical solution for etching is a corrosion process in the material removal process. The material removal process can be one or more of an etching process, a corrosion process, or a vaporization process. Specifically, the selection of the material removal process is related to the previous pretreatment operation. For example, when the pretreatment operation is a masking operation, the material removal process can be an etching process. This is not specifically limited in the embodiments of the present application.
[0073] It is understandable that, because the aperture of the second pre-treated area 121 is the same or substantially the same as the aperture of the first pre-treated area 111, the second pre-treated area 121 and the first pre-treated area 111 can be etched simultaneously. In addition, because the plurality of second pre-treated areas 121 form an annular structure having the second aperture in the second region 120, after the plurality of second pre-treated areas 121 are etched and removed, the middle portion of the annular structure 123 falls out, forming a second through hole 124 having the second aperture in the second region 120.
[0074] In some embodiments, other types of pre-processing operations and corresponding material removal processes may be performed on the first region 110 and the second region 120 of the substrate 100 to form the first through hole 112 and the second through hole 124 in the first region 110 and the second through hole 124 respectively.
[0075] Optionally, if the pretreatment operation is a laser modification operation, the first pretreatment area 111 and the plurality of second pretreatment areas 121 formed after the laser modification operation are as follows: Figure 2 As shown in (b) in .
[0076] In the above step S1200 , pre-processing is performed on the first region 110 to form the first pre-processed area 111 , which includes: performing a modification treatment on the first region 110 using a laser to form the first pre-processed area 111 .
[0077] In the above step S1300 , pre-processing is performed on the second region 120 to form a plurality of second pre-processed regions 121 , including: performing a modification treatment on the second region 120 using a laser to form the plurality of second pre-processed regions 121 .
[0078] When performing a laser modification operation, the aperture, shape and modification effect can be controlled by adjusting the laser parameters (wavelength, energy density, pulse width, spot diameter, scanning speed, etc.). In the embodiment of the present application, the aperture corresponding to a single laser modification operation can be the same as the first aperture, that is, a single modification treatment can form a first pretreatment area 111 in the first region 110.
[0079] For example, when laser modification is performed, its parameters can be set according to the material and size of the substrate 100. For example, since glass has a high absorption rate for CO2 laser with a wavelength of 10.6 μm, efficient modification can be achieved, so the wavelength can be set to 10.6 μm; the energy density can be adjusted according to the thickness of the glass, and the value range can be 0.5-3 J / cm 2 ; The pulse width can range from 50-200μs, which is used to balance the modification efficiency and the control of the heat-affected zone; the spot diameter can be adjusted through the mask, and the value range can be 20-50μm, which can be specifically set according to the first aperture; the scanning speed can range from 100-500mm / s. High-speed scanning can reduce heat accumulation and improve the quality of subsequent through-hole production.
[0080] Optionally, in the case where the pretreatment operation is a laser modification operation, the material removal process may be an acid pickling process, such as using an acidic solution (such as dilute hydrofluoric acid) to clean the substrate 100, remove the molten residue formed by the laser modification inside the through hole, improve the roughness of the inner wall of the through hole, and obtain Figure 2 The first through hole 112 and the second through hole 124 are shown in (c).
[0081] Optionally, if the pre-processing operation is a mask processing operation, the first pre-processing area 111 and the plurality of second pre-processing areas 121 formed after the mask processing operation are as follows: Figure 3 As shown in (c) in .
[0082] The step S1200 of performing pretreatment in the first region 110 to form the first pretreatment area 111 and the step S1300 of performing pretreatment in the second region 120 to form the plurality of second pretreatment areas 121 include:
[0083] like Figure 3As shown in (b) in Figure 3 In (a), a mask layer 200 is formed on the substrate 100 provided in the embodiment. The mask layer 200 and the substrate 100 form a stacked structure.
[0084] It should be noted that, in order to better mark each stacked layer, the mask layer 200 and the substrate 100 are staggered in drawing, which does not mean that the mask layer 200 and the substrate 100 are suspended. Figure 3 (b) Figure 3 (c) Figure 3 (d) Similarly. Figure 4 The same applies to the figures in .
[0085] The mask layer 200 may be formed on the substrate 100 by spin coating a photoresist. Alternatively, a metal layer (such as Cr, Al, etc.) may be deposited by magnetron sputtering or electron beam evaporation, and the deposited metal layer is the mask layer 200 .
[0086] Furthermore, the mask layer 200 on the first region 110 is removed to form a first pre-processing region 111 .
[0087] The mask layer 200 on the first region 110 may be removed by a photolithography process to form a through-hole pattern on the mask layer 200 . The through-hole pattern is the first pre-processing region 111 .
[0088] Furthermore, a portion of the mask layer 200 on the second region 120 is removed to form a plurality of second pre-processed regions 121 .
[0089] Among them, a plurality of through-hole patterns are formed in the second area 120 through a dry etching process, and the plurality of through-hole patterns form a ring structure 123 with a second aperture, and the aperture of the through-hole pattern is the third aperture. The plurality of through-hole patterns are the plurality of second pre-treatment areas 121 formed in the second area 120.
[0090] Optionally, in the case where the pre-processing operation is a mask processing operation, the material removal process may also be an etching process or a corrosion process, or an etching process+corrosion process.
[0091] When the material removal process is an etching process, reactive ion etching (RIE) or inductively coupled plasma (ICP) technology is used, and an etchant mainly composed of fluorine-based gas (such as CF4, SF6) is used to etch the first pre-treated area 111 to form a first through hole 112, and multiple second pre-treated areas 121 are etched to form multiple third through holes 122. After the multiple third through holes 122 are removed, the second area 120 forms a second through hole 124.
[0092] When the material removal process is an etching process, the substrate 100 is placed in a hydrofluoric acid (HF)-based etching solution (concentration 5-20%), and the first pre-treated area 111 is chemically etched to form a first through hole 112. The plurality of second pre-treated areas 121 are etched to form a plurality of third through holes 122. After the plurality of third through holes 122 are removed, the second area 120 forms a second through hole 124.
[0093] Furthermore, after the first through hole 112 and the second through hole 124 are formed on the substrate 100 through a corrosion process or an etching process, the mask layer 200 covering the substrate 100 is removed. Figure 3 As shown in (d), the substrate 100 having the first through hole 112 and the second through hole 124 is obtained.
[0094] Optionally, if the pretreatment operation is an exposure and development operation, the first pretreatment area 111 and the plurality of second pretreatment areas 121 formed after the exposure and development operation are as follows: Figure 4 As shown in (d) in .
[0095] The step S1200 of performing pretreatment in the first region 110 to form the first pretreatment area 111 and the step S1300 of performing pretreatment in the second region 120 to form the plurality of second pretreatment areas 121 include:
[0096] like Figure 4 As shown in (b) in Figure 4 A photosensitive coating 300 is formed on the substrate 100 provided in (a).
[0097] Among them, a special coating material containing photosensitive ions such as silver and cesium can be spin-coated or sprayed, and further cured by heat treatment (150-250°C) to form a uniform thin film, which is the photosensitive coating 300. The thickness of the photosensitive coating 300 can be controlled at 5-20μm according to the through-hole depth requirements.
[0098] Further, if Figure 4 As shown in (c) in FIG. 1 , a mask 400 is covered on the photosensitive coating 300 and an exposure process is performed.
[0099] The mask 400 is used to expose a portion of the first region 110 and the second region 120 during the exposure process.
[0100] During the exposure process, after the mask 400 is aligned with the substrate 100 , ultraviolet rays are used to irradiate the first region 110 and a portion of the second region 120 to activate the chemical activity of the photosensitive coating in the irradiated region.
[0101] The wavelength of ultraviolet light ranges from 365-405nm, and the light intensity ranges from 50-200mW / cm2 The exposure treatment time is 1-5 minutes, which can be adjusted according to the thickness of the photosensitive coating 300. This embodiment of the present application does not specifically limit this.
[0102] Furthermore, a developing solution is used to dissolve the photosensitive coating 300 after exposure treatment, such as Figure 4 As shown in (d), a first pre-treatment area 111 is formed in the first area 110, and a plurality of second pre-treatment areas 121 are formed in the second area 120.
[0103] Optionally, when the pretreatment operation is an exposure and development operation, the material removal process may be an etching process, such as placing the developed substrate 100 into a hydrofluoric acid-based etching solution (concentration 5-20%), which preferentially etches the exposed areas of the photosensitive coating and gradually penetrates the substrate 100. Thus, the first through-hole 112 is formed by etching in the first pretreatment area 111, and the plurality of third through-holes 122 are formed by etching in the plurality of second pretreatment areas 121. Furthermore, after the plurality of third through-holes 122 are removed, the second through-hole 124 is formed in the second area 120.
[0104] Furthermore, after the first through hole 112 and the second through hole 124 are formed on the substrate 100 through the etching process, the photosensitive coating 300 covering the substrate 100 is removed. Figure 4 As shown in (e), the substrate 100 having the first through hole 112 and the second through hole 124 is obtained.
[0105] It should be noted that in the method for manufacturing a through-glass hole provided in the embodiment of the present application, other glass through-hole manufacturing processes other than the pretreatment operations and material removal processes shown in the above embodiments can also be used to perform pretreatment operations on the first area and the second area, as well as material removal operations on the first pretreatment area and the second pretreatment area. The embodiment of the present application does not specifically limit the selection of a specific manufacturing process for the glass through-hole.
[0106] It can be understood that in the method for making a through hole in a substrate provided in the present application, a smaller first aperture is used to enclose an annular structure with a second aperture. In this way, when making a through hole, it is only necessary to make a through hole with an aperture of the first aperture, so that a first through hole with the first aperture and a second through hole with the second aperture can be made on the substrate. Since the aperture faced when making the hole is a single aperture, the same solution can be used to etch for the same length of time to make the first through hole and the second through hole with different apertures, avoiding the situation where the accuracy of the through hole is affected because the large hole and the small hole cannot be made at the same time when making through holes of different apertures.
[0107] In some embodiments, the present application provides a substrate having a first through hole and a second through hole, and the first through hole and the second through hole are made using the method for making a substrate through hole provided in the above embodiments of the present application.
[0108] Optionally, the first through hole is a TGV hole, and the size of the second through hole is in the range of 0.5-3 mm.
[0109] Those skilled in the art can clearly understand that, for the convenience and brevity of description, the above-described fabrication of the through holes on the substrate can refer to the corresponding substrates and implementation principles in the aforementioned embodiments, and will not be repeated here.
[0110] In some embodiments, as Figure 5 As shown, the present application provides a device for manufacturing a through-hole in a substrate, comprising a laser head for responding to a control signal and emitting laser.
[0111] a control module coupled to the laser head, configured to control the laser head to emit laser light to perform a modification treatment on a first area on the substrate to form a first pre-treated area, wherein the first pre-treated area is configured to form a first through hole having a first aperture;
[0112] It is also used to control the laser head to emit laser to modify the second area on the substrate to form multiple second pre-treatment areas, and the multiple second pre-treatment areas are used to form multiple third through holes; the third through holes have a third aperture, and the multiple third through holes are arranged in sequence and form a ring structure with a second aperture, the third aperture is the same or basically the same as the first aperture, and the second aperture is larger than the first aperture.
[0113] The driving module is coupled to the control module, and is used to receive a signal from the control module and drive the substrate to move into the etching solution for etching, so that the first pre-treated area forms a first through hole, and the annular area is removed to form a second through hole.
[0114] Those skilled in the art can clearly understand that, for the convenience and brevity of description, the above-described fabrication of the through holes on the substrate can refer to the corresponding substrates and implementation principles in the aforementioned embodiments, and will not be repeated here.
[0115] The above are only preferred embodiments of the present application and are not intended to limit the present application. Any modifications, equivalent replacements, and improvements made within the spirit and principles of the present application should be included in the scope of protection of the present application.
Claims
1. A method for manufacturing a through-hole in a substrate, characterized in that: The surface of the substrate includes a first area and a second area, and the method includes: Performing pretreatment on the first region to form a first pretreatment zone, wherein the first pretreatment zone is used to form a first through hole, and the first through hole has a first aperture; Performing pretreatment on the second region to form a plurality of second pretreatment zones, the plurality of second pretreatment zones being used to form a plurality of third through holes, the third through holes having a third aperture, the plurality of third through holes being sequentially arranged and surrounding an annular structure having a second aperture, the third aperture being the same as or substantially the same as the first aperture, and the second aperture being larger than the first aperture; The first pretreatment area and the plurality of second pretreatment areas are subjected to material removal by adopting the same material removal process, so that the first through hole is formed in the first pretreatment area, and the second through hole with the second diameter is formed in the second area.
2. The production method according to claim 1, characterized in that The material removal process is one or more of an etching process, a corrosion process or a gasification process.
3. The production method according to claim 1, characterized in that The pre-processing of the first region to form the first pre-processed area includes: performing a modification process on the first region by laser dotting to form the first pre-processed area; The pre-processing in the second area to form a plurality of second pre-processing areas includes: performing a modification process in the second area by laser dotting to form a plurality of second pre-processing areas.
4. The production method according to claim 1, characterized in that The pre-processing of the first region to form the first pre-processed area includes: performing a modification process on the first region using a laser to form the first pre-processed area; The pre-processing in the second area to form a plurality of second pre-processed areas includes: performing modification processing in the plurality of second pre-processed areas using laser to form a plurality of second pre-processed areas.
5. The production method according to claim 1, characterized in that: The pretreatment in the first area to form a first pretreatment area, and the pretreatment in the second area to form a plurality of second pretreatment areas, include: forming a mask layer on the substrate; removing the mask layer on the first area to form the first pre-processing area; Part of the mask layer on the second area is removed to form a plurality of the second pre-processing areas.
6. The production method according to claim 1, characterized in that: The pretreatment in the first area to form a first pretreatment area, and the pretreatment in the second area to form a plurality of second pretreatment areas, include: forming a photosensitive coating on the substrate; Covering the photosensitive coating with a mask and performing an exposure process; the mask is used to expose the first area and a portion of the second area during the exposure process; A developing solution is used to dissolve the photosensitive coating after the exposure treatment, so as to form the first pre-treatment area in the first area and form a plurality of the second pre-treatment areas in the second area.
7. The production method according to any one of claims 1 to 6, characterized in that: The first through-hole is used to realize electrical interconnection between chips or between packaging layers, and the second through-hole is a positioning through-hole in the subsequent process of the substrate.
8. A substrate, characterized in that The substrate has a first through hole and a second through hole, and the first through hole and the second through hole are made by using the method for making a substrate through hole according to any one of claims 1 to 7.
9. The substrate according to claim 8, characterized in that The aperture size of the second through hole ranges from 0.5 to 3 mm.
10. A device for manufacturing a through-hole in a substrate, characterized in that: include: a laser head, configured to respond to a control signal and emit laser light; a control module, coupled to the laser head, for controlling the laser head to emit laser light to perform a modification treatment on a first area on the substrate to form a first pre-treated area, wherein the first pre-treated area is used to form a first through hole, and the first through hole has a first aperture; The laser head is further configured to control the laser head to emit laser light to perform a modification treatment on a second area on the substrate, thereby forming a plurality of second pre-treated areas, wherein the plurality of second pre-treated areas are configured to form a plurality of third through holes; the third through holes have a third aperture, the plurality of third through holes are sequentially arranged and enclosed in a ring structure having a second aperture, the third aperture being the same as or substantially the same as the first aperture, and the second aperture being larger than the first aperture; The driving module is coupled to the control module, and is used to receive a signal from the control module and drive the substrate to move into the etching solution for etching, so that the first through hole is formed in the first pretreatment area, and the second through hole with the second aperture is formed in the second area.