Hybrid substrate and preparation method thereof

Abstract

The invention relates to a mixed substrate and a preparation method thereof, and the preparation method of the mixed substrate comprises the steps: providing a temporary substrate; forming a redistribution interposer on the temporary substrate, the redistribution interposer including a first pad located at one end of the redistribution interposer close to the temporary substrate and a second pad located at one end of the redistribution interposer away from the temporary substrate; forming a packaging substrate; the package substrate and the temporary substrate on which the redistribution interposer is formed are bonded through the second pad to form a hybrid substrate. By applying the hybrid substrate, advanced packaging can be directly carried out even if no high-end equipment with high cost exists, so that the convenience, the application universality and the like of the advanced packaging can be greatly improved.

Description

Technical Field

[0001] The present application relates to the field of integrated circuit technology, and in particular to a hybrid substrate and a preparation method thereof. Background Art

[0002] With the rise of high-performance applications such as high-performance computing (HPC), artificial intelligence (AI), and 5G mobile communications, the demand for computing power is increasing. In this context, more advanced semiconductor packaging technologies are urgently needed to meet the enormous demand for the semiconductor industry in the era of computing power. Summary of the Invention

[0003] Based on this, the present application provides a hybrid substrate and a preparation method thereof to meet the requirements of advanced packaging.

[0004] A method for preparing a hybrid substrate, comprising:

[0005] Provide temporary substrate;

[0006] forming a redistribution interposer on the temporary substrate, the redistribution interposer comprising a first pad and a second pad, the first pad being located at an end of the redistribution interposer close to the temporary substrate, and the second pad being located at an end of the redistribution interposer away from the temporary substrate;

[0007] forming a packaging substrate;

[0008] The package substrate is bonded to the temporary substrate on which the redistribution interposer is formed through the second pads to form a hybrid substrate.

[0009] In one embodiment, bonding the package substrate to the temporary substrate having the redistribution interposer formed thereon via the second pad to form a hybrid substrate comprises:

[0010] bonding the package substrate to the temporary substrate on which the redistribution interposer is formed through the second pad;

[0011] The temporary substrate is removed to expose the first pad.

[0012] In one embodiment, before forming the redistribution interposer on the temporary substrate, the method further includes:

[0013] forming a sacrificial layer on the temporary substrate;

[0014] The removing of the temporary substrate comprises:

[0015] The temporary substrate is peeled off through the sacrificial layer.

[0016] In one embodiment, before removing the temporary substrate, the method further comprises:

[0017] A filling layer is formed between the packaging substrate and the redistribution interposer.

[0018] In one embodiment, before bonding the package substrate to the temporary substrate having the redistribution interposer formed thereon via the second pad to form a hybrid substrate, the process includes:

[0019] Forming packaging solder balls on the packaging substrate.

[0020] In one embodiment, forming a redistribution interposer on the temporary substrate includes:

[0021] forming a plurality of wiring layers with gradually increasing line widths and / or line spacings on the temporary substrate, wherein the wiring layer farthest from the temporary substrate includes the second pad among the plurality of wiring layers;

[0022] A solder resist layer is formed on a side of the wiring layer farthest from the temporary substrate and away from the temporary substrate, wherein the solder resist layer has a pad opening, and the pad opening exposes the second pad.

[0023] In one embodiment, after forming the solder resist layer on the wiring layer farthest from the temporary substrate, the method further includes:

[0024] The exposed surface of the second pad is chemically treated to form a welding film on the surface of the second pad, wherein the welding performance of the welding film is higher than the welding performance of the second pad.

[0025] In one embodiment, the temporary substrate comprises a glass substrate.

[0026] A hybrid substrate comprising:

[0027] A redistribution interposer, the redistribution interposer comprising a first pad and a second pad, wherein the second pad and the first pad are respectively located at two ends of the redistribution interposer;

[0028] The packaging substrate is bonded to the redistribution interposer through the second pad.

[0029] In one embodiment, the hybrid substrate further includes a temporary substrate, the redistribution interposer is located on the temporary substrate, and the package substrate is bonded to a side of the redistribution interposer away from the temporary substrate.

[0030] In one embodiment, the hybrid substrate further includes a sacrificial layer, the sacrificial layer is located on the temporary substrate, and the redistribution interposer is located on a side of the sacrificial layer away from the temporary substrate.

[0031] In one embodiment, the hybrid substrate further comprises:

[0032] A filling layer is located between the packaging substrate and the redistribution interposer.

[0033] In one embodiment, the redistribution interposer includes:

[0034] a plurality of wiring layers, wherein line widths and / or line spacings of the plurality of wiring layers gradually increase from away from the package substrate to closer to the package substrate, and among the plurality of wiring layers, the wiring layer closest to the package substrate includes the second pad;

[0035] The solder resist layer is located between the wiring layer closest to the package substrate and the package substrate, and exposes the second pad.

[0036] In the above-mentioned hybrid substrate and its preparation method, thinner circuits than the packaging substrate can be formed in the redistribution interposer, thereby enabling smaller-sized advanced packaging. The first pad of the redistribution interposer can be used for bonding with smaller-sized semiconductor structures (such as chips). Therefore, the hybrid substrate of the present application has the ability to achieve advanced packaging. By applying the hybrid substrate of the present application, even if there is no expensive high-end equipment, advanced packaging can be directly performed, which can greatly improve the convenience and wide application of advanced packaging. At the same time, the packaging substrate of the present application and the redistribution interposer are connected by bonding. Therefore, when a problem occurs in one of the two, the two can be debonded without having to scrap the entire hybrid substrate, thereby reducing the production cost of the hybrid substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the conventional technology, the following briefly introduces the drawings required for use in the embodiments or the conventional technology descriptions. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0038] Figure 1 is a flow chart of a method for preparing a hybrid substrate provided in one embodiment;

[0039] Figures 2 to 14 is a schematic cross-sectional view of a structure obtained during the preparation of a hybrid substrate provided in one embodiment;

[0040] Figure 15 is a schematic diagram of a cross-sectional structure of a hybrid substrate provided in one embodiment;

[0041] Figure 16 FIG. 1 is a schematic diagram of the cross-sectional structure of a hybrid substrate provided in another embodiment.

[0042] Description of reference numerals:

[0043] 100-temporary substrate, 200-rewiring interposer, 210-wiring layer, 211-seed layer, 2111-seed material layer, 212-metal layer, 220-insulating dielectric layer, 2201-insulating dielectric material layer, 230-solder mask layer, 240-welding film, 210a-first solder pad, 210b-second solder pad, 300-packaging substrate, 310-packaging solder ball, 400-sacrificial layer, 500-filling layer, 10-first patterned photoresist. DETAILED DESCRIPTION

[0044] To facilitate understanding of the present application, the present application will be described more fully below with reference to the accompanying drawings. The accompanying drawings provide embodiments of the present application. However, the present application may be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to make the disclosure of the present application more thorough and comprehensive.

[0045] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application pertains. The terms used herein in the specification of this application are for the purpose of describing specific embodiments only and are not intended to limit this application.

[0046] It should be understood that when an element or layer is referred to as being "on, adjacent to, connected to, or coupled to" another element or layer, it can be directly on, adjacent to, connected to, or coupled to the other element or layer, or there can be intervening elements or layers. In contrast, when an element is referred to as being "directly on, directly adjacent to, directly connected to, or directly coupled to" another element or layer, there can be no intervening elements or layers. It should be understood that although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, doping types, and / or portions, these elements, components, regions, layers, doping types, and / or portions should not be limited by these terms. These terms are merely used to distinguish one element, component, region, layer, doping type, or portion from another element, component, region, layer, doping type, or portion. Therefore, without departing from the teachings of the present application, the first element, component, region, layer, doping type, or portion discussed below may be represented as a second element, component, region, layer, or portion.

[0047] Spatially relative terms such as "under," "beneath," "beneath," "under," "above," "above," etc., may be used herein to describe the relationship of an element or feature shown in the figures to other elements or features. It should be understood that in addition to the orientations shown in the figures, spatially relative terms also include different orientations of the device in use and operation. For example, if the device in the drawings is turned over, the element or feature described as "under" or "beneath" or "beneath" the other elements will be oriented as "above" the other elements or features. Thus, the exemplary terms "under" and "under" can include both upper and lower orientations. In addition, the device can also include alternative orientations (e.g., rotated 90 degrees or other orientations), and the spatial descriptors used herein are interpreted accordingly.

[0048] As used herein, the singular forms "a," "an," and "the" may also include the plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "include," "comprising," "having," and the like specify the presence of stated features, integers, steps, operations, components, parts, or combinations thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof. Also, in this specification, the term "and / or" includes any and all combinations of the relevant listed items.

[0049] In one embodiment, see Figure 1 , provides a method for preparing a hybrid substrate, comprising the following steps:

[0050] Step S10, see Figure 2 , providing a temporary substrate 100;

[0051] Step S30, see Figure 12 , forming a redistribution interposer 200 on the temporary substrate 100, the redistribution interposer 200 including a second pad 210b and a first pad 210a, the first pad 210a being located at an end of the redistribution interposer 200 close to the temporary substrate 100, and the second pad 210b being located at an end of the redistribution interposer 200 away from the temporary substrate 100;

[0052] Step S40, see Figure 13 , forming a packaging substrate 300;

[0053] Step S60, see Figure 15 or Figure 16 The package substrate 300 is bonded to the temporary substrate 100 formed with the redistribution interposer 200 through the second pads 210 b to form a hybrid substrate.

[0054] In step S10, refer to Figure 2 The temporary substrate 100 is used to provide support for the subsequently formed redistribution interposer 200. The temporary substrate 100 may include but is not limited to a glass substrate.

[0055] In step S30, refer to Figure 3-Figure 12 When forming the redistribution interposer 200 , a plurality of wiring layers 210 may be sequentially formed on the temporary substrate 100 . Adjacent wiring layers 210 may be isolated by an insulating dielectric layer 220 .

[0056] For example, the insulating dielectric layer 220 may be made of an organic material. In this case, when the temporary substrate 100 comprises a glass substrate, the structural strength of the glass can be leveraged to ensure the flatness of the redistribution interposer 200, thereby effectively preventing warping of the redistribution interposer 200. Furthermore, the ductility of the organic material in the redistribution interposer 200 can be leveraged to address the warping issue of hybrid substrates.

[0057] See also Figures 2 to 5 as well as Figures 8 to 10 When forming each wiring layer 210, a seed material layer 2111 can first be sputtered using physical vapor deposition (PVD) technology. The material of the seed material layer 2111 can include, for example, Ti / Cu. A photoresist can then be coated on the seed material layer 2111 and exposed using laser direct patterning (LDI) technology. The exposed photoresist is then developed to form a first patterned photoresist 10. The first patterned photoresist 10 can have a first opening. Then, a metal (such as copper) can be deposited within the first opening of the first patterned photoresist 10 using electrochemical deposition (ECD) to form a metal layer 212. The first patterned photoresist 10 is then stripped and removed, and the seed material layer 2111 is etched based on the metal layer 212 to form the seed layer 211. The seed layer 211 and the metal layer 212 form the wiring layer 210.

[0058] The first wiring layer 210 formed on the temporary substrate 100 includes a first pad 210a. Before each wiring layer 210 after the first wiring layer 210 is formed, refer to Figures 6 and 7 , an insulating dielectric material layer 2201 can be formed by slit coating or other methods. Then, the insulating dielectric material layer 2201 can be etched to form the insulating dielectric layer 220. The insulating dielectric layer 220 has through-holes that expose at least a portion of the wiring layer 210 located below the insulating dielectric material layer 2201. The later-formed wiring layer 210 can be electrically connected to the previously formed wiring layer 210 through the through-holes in the insulating dielectric layer 220.

[0059] It is understood that the first pads 210a may be located in the wiring layer 210 formed first on the temporary substrate 100. The wiring layer 210 may include only the first pads 210a; or, the wiring layer 210 may include both the first pads 210a and the traces. The number of first pads 210a may be multiple, and the specific number may be set according to actual needs.

[0060] The second pads 210b can be located in the wiring layer 210 that is finally formed on the temporary substrate 100. The wiring layer 210 can include only the second pads 210b; alternatively, the wiring layer 210 can include both the second pads 210b and the traces. The number of second pads 210b can be multiple, and can be set according to actual needs.

[0061] The second pad 210b can be used for bonding to the package substrate 300. The second pad 210b can be used for bonding to a smaller semiconductor structure (such as a chip), etc. The area of ​​the second pad 210b can be larger than that of the first pad 210a.

[0062] In step S40 , the packaging substrate 300 may include a support substrate and packaging circuits located on both sides of the support substrate. The packaging substrate 300 may include, but is not limited to, an ABF (Ajinomoto Build-up Film) packaging substrate 300 .

[0063] In step S60, refer to Figure 15 or Figure 16 , the package substrate 300 can be bonded to the second pad 210 b through bonding technology.

[0064] In this embodiment, a redistribution interposer 200 is first formed on a temporary substrate 100. The redistribution interposer 200 is then bonded to the packaging substrate 300 via the second pad 210b to form a hybrid substrate. Thinner lines than the packaging substrate 300 can be formed in the redistribution interposer 200, thereby enabling advanced packaging of a smaller size. The first pad 210a of the redistribution interposer 200 can be used for bonding with smaller semiconductor structures (such as chips). Therefore, the hybrid substrate formed by the method of this embodiment has the ability to achieve advanced packaging. Using the hybrid substrate formed by the method of this embodiment, even without expensive high-end equipment, advanced packaging can be directly performed, thereby greatly improving the convenience and wide application of advanced packaging.

[0065] Furthermore, in this embodiment, the package substrate 300 and the redistribution interposer 200 are connected via bonding. Therefore, if a problem occurs with either of them, the two can be debonded without having to scrap the entire hybrid substrate, thereby reducing the production cost of the hybrid substrate.

[0066] In one embodiment, step S60 includes:

[0067] Step S61, see Figure 14 , bonding the package substrate 300 to the temporary substrate 100 formed with the redistribution interposer 200 through the second pad 210 b ;

[0068] Step S63, see Figure 16 , the temporary substrate 100 is removed to expose the first pad 210a.

[0069] As an example, before forming the redistribution interposer 200 on the temporary substrate 100 , step S30 further includes:

[0070] Step S20, see Figure 2 , a sacrificial layer 400 is formed on the temporary substrate 100 .

[0071] For example, the sacrificial layer 400 may be formed by a slot coating technique. The sacrificial layer 400 may include, but is not limited to, a release tape.

[0072] At this time, step S63 may include:

[0073] In step S631 , the temporary substrate 100 is peeled off through the sacrificial layer 400 .

[0074] The temporary substrate 100 may be removed by laser lift-off or the like. Specifically, the sacrificial layer 400 may be irradiated with laser and destroyed, thereby removing the temporary substrate 100.

[0075] As an example, before step S63, the following steps may also be included:

[0076] Step S62, see Figure 15 , a filling layer 500 is formed between the package substrate 300 and the redistribution interposer 200 .

[0077] The material of the filling layer 500 may include, but is not limited to, insulating glue. For example, the glue may be dispensed by a needle and simultaneously spread between the package substrate 300 and the redistribution interposer 200 through a spin coating process, thereby forming the filling layer 500 in the gap between the package substrate 300 and the redistribution interposer 200.

[0078] Before peeling off the temporary substrate 100 , a filling layer 500 is formed, thereby improving the connection reliability between the packaging substrate 300 and the redistribution interposer 200 and preventing the connection between the packaging substrate 300 and the redistribution interposer 200 from being affected during the removal of the temporary substrate 100 .

[0079] In an embodiment, the hybrid substrate finally formed includes the packaging substrate 300 and the redistribution interposer 200 , but does not include the temporary substrate 100 , thereby making packaging more convenient during the application of the hybrid substrate.

[0080] In other embodiments, see Figure 15 , the temporary substrate 100 may not be removed, that is, the hybrid substrate finally formed includes the packaging substrate 300 and the redistribution interposer 200, and also includes the temporary substrate 100. At this time, during the transportation of the hybrid substrate product, the temporary substrate 100 can protect the redistribution interposer 200 from damage such as external friction, thereby providing good protection for the product. At the same time, it can be understood that when the hybrid substrate includes the temporary substrate 100, the temporary substrate 100 can be removed during the application process of packaging using the hybrid substrate. Alternatively, in some embodiments, of course, during the formation of the hybrid substrate, the temporary substrate 100 is removed, so that when the hybrid substrate does not include the temporary substrate 100, a protective film can be attached to the removal side of the temporary substrate 100 after the temporary substrate 100 is removed to protect the redistribution interposer 200.

[0081] In one embodiment, see Figure 13 , before step S60, further comprising:

[0082] In step S50 , packaging solder balls 310 are formed on the packaging substrate 300 .

[0083] For example, the package substrate 300 may include a package pad. A metallization layer covering the package pad may be first formed. Then, a second patterned photoresist may be formed on the metallization layer. The second patterned photoresist may have a second opening. The second opening may be arranged opposite to the package pad. The area of ​​the second opening may be larger than the area of ​​the package pad. Then, a copper layer is electroplated on the surface of the package pad exposed by the second opening. Thereafter, solder may be electroplated on the surface of the copper layer. The solder may fill and exceed the second patterned photoresist to form a mushroom-shaped bump. Thereafter, the second patterned photoresist may be removed, and the metallization layer may be patterned and etched. Then, flux may be added to the solder and reflowed to form a smooth, topless spherical solder bump, i.e., a package solder ball 310.

[0084] After forming the package solder balls 310 on the package substrate 300, in step S60, the package solder balls 310 can be bonded to the second solder pads 210b. For example, the package solder balls 310 can be bonded to the second solder pads 210b using thermocompression bonding (e.g., low-pressure thermocompression bonding). For example, when using low-pressure thermocompression bonding, flux can first be applied to the package solder balls 310 and / or the second solder pads 210b. The temporary substrate 100, with the redistribution interposer 200 formed thereon, can then be placed above the package substrate 300, with the second solder pads 210b facing the solder pads on the package substrate 300. The second solder pads 210b are then brought into contact with the package solder balls 310 and heated to melt the solder. During this process, a small pressure is applied to maintain a certain distance between the redistribution interposer 200 and the package substrate 300. A filler layer 500 can then be formed between the package substrate 300 and the redistribution interposer 200.

[0085] In this embodiment, solder balls (package solder balls 310 ) are formed on the package substrate 300 with relatively strong rigidity, thereby improving the stability of the solder ball preparation process and thus improving the reliability of the solder balls.

[0086] Of course, in other embodiments, after forming the redistribution interposer 200 on the temporary substrate 100 , solder balls may be formed on the second pads 210 b and then soldered to the packaging pads on the packaging substrate 300 .

[0087] In one embodiment, see Figure 11 , step S30 includes:

[0088] Step S31, forming a plurality of wiring layers 210 with gradually increasing line widths and / or line spacings on the temporary substrate 100, wherein the wiring layer 210 farthest from the temporary substrate 100 includes a second pad 210b;

[0089] In step S32 , a solder resist layer 230 is formed on a side of the wiring layer 210 that is farthest from the temporary substrate 100 and is away from the temporary substrate 100 . The solder resist layer 230 has a pad opening, and the pad opening exposes the second pad 210 b .

[0090] In step S31 , the line widths and / or line spacings of the plurality of wiring layers 210 are gradually increased, so that the wiring layer 210 with the largest line width can be bonded to the package substrate 300 .

[0091] The wiring layer 210 that is farthest from the temporary substrate 100 is the wiring layer 210 that is formed last.

[0092] In step S32, solder resist layer 230 can be formed into a solder resist material layer by slit coating or other methods. Then, the solder resist material layer is patterned and etched to form a pad opening. The pad opening exposes the second pad 210b, so that the second pad 210b can be soldered to the package substrate 300. The solder resist material layer remaining after etching forms solder resist layer 230.

[0093] The material of the solder resist layer 230 may also be an organic material. The material of the solder resist layer 230 and the material of the insulating dielectric layer 220 between the wiring layers 210 may be the same or different.

[0094] The solder resist layer 230 can protect the second pads 210 b and prevent solder from flowing and causing a short circuit between adjacent second pads 210 b during the bonding process between the second pads 210 b and the package substrate 300 .

[0095] In one embodiment, see Figure 12 , after step S32, further comprising:

[0096] In step S33 , the exposed surface of the second pad 210 b is chemically treated to form a welding film 240 on the surface of the second pad 210 b . The welding performance of the welding film 240 is higher than that of the second pad 210 b .

[0097] For example, the exposed surface of the second pad 210b may be electrolessly plated with nickel palladium immersion gold to form a welding film 240. The welding performance of the welding film 240 is higher than that of the second pad 210b, so that the second pad 210b can be reliably bonded to the package substrate 300.

[0098] It should be understood that although Figure 1 The steps in the flowchart are shown in sequence as indicated by the arrows, but these steps are not necessarily executed in the order indicated by the arrows. Unless otherwise specified in this document, there is no strict order restriction for the execution of these steps, and these steps can be executed in other orders. In addition, Figure 1 At least part of the steps may include multiple steps or multiple stages. These steps or stages are not necessarily performed at the same time, but can be performed at different times. The order of execution of these steps or stages is not necessarily one by one, but can be performed in turn or alternately with other steps or at least part of the steps or stages in other steps.

[0099] In one embodiment, see Figure 15 or Figure 16 , a hybrid substrate is also provided, which includes a redistribution interposer 200 and a packaging substrate 300.

[0100] The redistribution interposer 200 includes a first pad 210 a and a second pad 210 b . The second pad 210 b and the first pad 210 a are located at two ends of the redistribution interposer 200 , respectively.

[0101] The redistribution interposer 200 may include a plurality of wiring layers 210 sequentially formed on the temporary substrate 100. Adjacent wiring layers 210 may be isolated by an insulating dielectric layer 220.

[0102] The first pads 210a can be located in the wiring layer 210 closest to the temporary substrate 100. The wiring layer 210 can include only the first pads 210a; alternatively, the wiring layer 210 can include both the first pads 210a and the traces. The number of first pads 210a can be multiple, and can be set according to actual needs.

[0103] The second pads 210b can be located in the wiring layer 210 that is farthest from the temporary substrate 100. The wiring layer 210 can include only the second pads 210b; alternatively, the wiring layer 210 can include both the second pads 210b and the traces. The number of second pads 210b can be multiple, and can be set according to actual needs.

[0104] The second pad 210b can be used for bonding to the package substrate 300. The second pad 210b can be used for bonding to a smaller semiconductor structure (such as a chip), etc. The area of ​​the second pad 210b can be larger than that of the first pad 210a.

[0105] The package substrate 300 is bonded to the redistribution interposer 200 through the second pads 210 b .

[0106] The packaging substrate 300 may include a support substrate and packaging circuits located on both sides of the support substrate. The packaging substrate 300 may include, but is not limited to, an ABF (Ajinomoto Build-up Film) packaging substrate 300 .

[0107] In this embodiment, the hybrid substrate includes a rewiring interposer 200 and a packaging substrate 300. The rewiring interposer 200 can form thinner circuits than the packaging substrate 300, thereby enabling smaller advanced packaging. The first pads 210a of the rewiring interposer 200 can be used for bonding to smaller semiconductor structures (such as chips). Therefore, the hybrid substrate provided in this embodiment has the ability to implement advanced packaging. Using the hybrid substrate of this embodiment, advanced packaging can be performed directly even without expensive high-end equipment, greatly improving the convenience and wide application of advanced packaging.

[0108] Furthermore, the package substrate 300 and the redistribution interposer 200 provided in this embodiment are connected by bonding. Therefore, if a problem occurs with one of the two, the bonding can be removed without having to scrap the entire hybrid substrate, thereby reducing the production cost of the hybrid substrate.

[0109] In one embodiment, see Figure 15 The hybrid substrate further includes a temporary substrate 100. A redistribution interposer 200 is located on the temporary substrate 100. A package substrate 300 is bonded to a side of the redistribution interposer 200 that is away from the temporary substrate 100.

[0110] As an example, the hybrid substrate may further include a sacrificial layer 400. The sacrificial layer 400 is located on the temporary substrate 100. The redistribution interposer 200 is located on a side of the sacrificial layer 400 away from the temporary substrate 100.

[0111] The sacrificial layer 400 may include, but is not limited to, a release tape.

[0112] At this time, during the application process of the hybrid substrate, the temporary substrate 100 in the hybrid substrate can be removed through the sacrificial layer 400. For example, the temporary substrate 100 can be removed by, for example, irradiating and destroying the sacrificial layer 400 with a laser.

[0113] In this embodiment, the hybrid substrate includes a temporary substrate 100. During the transportation of the hybrid substrate product, the temporary substrate 100 protects the redistribution interposer 200 from damage such as external friction, thereby effectively protecting the product. It should be understood that when the hybrid substrate includes the temporary substrate 100, the temporary substrate 100 can be removed during the application process of the hybrid substrate packaging.

[0114] Of course, in other embodiments, see Figure 16 The hybrid substrate may also not include the temporary substrate 100. For example, when the hybrid substrate does not include the temporary substrate 100, a protective film may be attached to a side of the redistribution interposer 200 away from the package substrate 300.

[0115] In one embodiment, the hybrid substrate further includes a filling layer 500 . The filling layer 500 is located between the package substrate 300 and the redistribution interposer 200 .

[0116] The filling layer 500 can improve the connection reliability between the package substrate 300 and the redistribution interposer 200. The material of the filling layer 500 can include but is not limited to insulating glue.

[0117] In one embodiment, the redistribution interposer 200 includes a plurality of routing layers 210 and includes a solder resist layer 230 .

[0118] The line width and / or line spacing of the multiple wiring layers 210 gradually increase from away from the package substrate 300 to closer to the package substrate 300. Furthermore, among the multiple wiring layers 210, the wiring layer 210 closest to the package substrate 300 includes the second pad 210b. Therefore, the area of ​​the second pad 210b can be relatively large, thereby enabling effective bonding to the package substrate 300.

[0119] The solder resist layer 230 is located between the wiring layer 210 closest to the package substrate 300 and the package substrate 300. The solder resist layer 230 exposes the second pads 210b. The solder resist layer 230 can protect the second pads 210b and prevent solder from flowing during the bonding process between the second pads 210b and the package substrate 300, thereby preventing adjacent second pads 210b from shorting.

[0120] In the description of this specification, reference to the terms "one embodiment," "other embodiments," etc., means that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic descriptions of the above terms do not necessarily refer to the same embodiment or example.

[0121] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features of the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0122] The above-described embodiments merely represent several implementation methods of the present application. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that a person of ordinary skill in the art may make various modifications and improvements without departing from the spirit of the present application, and these modifications and improvements fall within the scope of protection of the present application. Therefore, the scope of protection of the present patent application shall be determined by the appended claims.

Claims

1. A method for preparing a hybrid substrate, characterized in that: include: Provide temporary substrate; forming a redistribution interposer on the temporary substrate, the redistribution interposer comprising a first pad and a second pad, the first pad being located at an end of the redistribution interposer close to the temporary substrate, and the second pad being located at an end of the redistribution interposer away from the temporary substrate; forming a packaging substrate; The package substrate is bonded to the temporary substrate on which the redistribution interposer is formed through the second pads to form a hybrid substrate.

2. The method for preparing a hybrid substrate according to claim 1, wherein: The step of bonding the package substrate to the temporary substrate having the redistribution interposer formed thereon via the second pad to form a hybrid substrate comprises: bonding the package substrate to the temporary substrate on which the redistribution interposer is formed through the second pad; The temporary substrate is removed to expose the first pad.

3. The method for preparing a hybrid substrate according to claim 2, wherein: Before forming the redistribution interposer on the temporary substrate, the method further includes: forming a sacrificial layer on the temporary substrate; The removing of the temporary substrate comprises: The temporary substrate is peeled off through the sacrificial layer.

4. The method for preparing a hybrid substrate according to claim 2, wherein: Before removing the temporary substrate, the method further includes: A filling layer is formed between the packaging substrate and the redistribution interposer.

5. The method for preparing a hybrid substrate according to claim 1, wherein: Before bonding the package substrate to the temporary substrate having the redistribution interposer formed thereon via the second pad to form a hybrid substrate, the method includes: Forming packaging solder balls on the packaging substrate.

6. The method for preparing a hybrid substrate according to claim 1, wherein: The forming of a redistribution interposer on the temporary substrate comprises: forming a plurality of wiring layers with gradually increasing line widths and / or line spacings on the temporary substrate, wherein the wiring layer farthest from the temporary substrate includes the second pad among the plurality of wiring layers; A solder resist layer is formed on a side of the wiring layer farthest from the temporary substrate and away from the temporary substrate, wherein the solder resist layer has a pad opening, and the pad opening exposes the second pad.

7. The method for preparing a hybrid substrate according to claim 6, wherein: After forming the solder resist layer on the wiring layer farthest from the temporary substrate, the method further includes: The exposed surface of the second pad is chemically treated to form a welding film on the surface of the second pad, wherein the welding performance of the welding film is higher than the welding performance of the second pad.

8. The method for preparing a hybrid substrate according to claim 1, wherein: The temporary substrate includes a glass substrate.

9. A hybrid substrate, characterized in that include: A redistribution interposer, the redistribution interposer comprising a first pad and a second pad, wherein the second pad and the first pad are respectively located at two ends of the redistribution interposer; The packaging substrate is bonded to the redistribution interposer through the second pad.

10. The hybrid substrate according to claim 9, characterized in that The hybrid substrate further includes a temporary substrate. The redistribution interposer is located on the temporary substrate. The package substrate is bonded to a side of the redistribution interposer away from the temporary substrate.

11. The hybrid substrate according to claim 10, characterized in that The hybrid substrate further includes a sacrificial layer, wherein the sacrificial layer is located on the temporary substrate, and the redistribution interposer is located on a side of the sacrificial layer away from the temporary substrate.

12. The hybrid substrate according to claim 9, wherein The hybrid substrate further comprises: A filling layer is located between the packaging substrate and the redistribution interposer.

13. The hybrid substrate according to claim 9, characterized in that The rewiring interposer comprises: a plurality of wiring layers, wherein line widths and / or line spacings of the plurality of wiring layers gradually increase from away from the package substrate to closer to the package substrate, and among the plurality of wiring layers, the wiring layer closest to the package substrate includes the second pad; The solder resist layer is located between the wiring layer closest to the package substrate and the package substrate, and exposes the second pad.

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