Intelligent temperature control radio frequency microsystem packaging structure based on AI and micro-channel

Abstract

The invention relates to an intelligent temperature control radio frequency microsystem packaging structure based on AI and a micro-channel. Comprising a micro-channel layer arranged above a feed layer, a chip layer arranged above the micro-channel layer, a second temperature measurement isolation layer arranged above the chip layer, an electromagnetic isolation layer arranged above the second temperature measurement isolation layer, a first temperature measurement isolation layer arranged above the electromagnetic isolation layer, and an antenna layer arranged above the first temperature measurement isolation layer. The first temperature measurement isolation layer comprises a first SiO2 thin film layer and a radio frequency antenna temperature measurement unit below the first SiO2 thin film layer; and the second temperature measurement isolation layer comprises a second SiO2 thin film layer and a chip temperature measurement unit above the second SiO2 thin film layer. Therefore, temperature change can be quickly responded, a temperature adjusting device can be dynamically adjusted, temperature closed-loop control is achieved, and wide-temperature-range stable operation of the system is guaranteed.

Description

Technical Field

[0001] The present application relates to the field of microelectronic packaging and sensor integration technology, and in particular to an intelligent temperature-controlled radio frequency microsystem packaging structure based on AI and microchannels. Background Art

[0002] With the rapid development of electronic information technology, RF microsystems are increasingly being used in smart terminals, autonomous driving, satellite communications, and other fields. Their demands for high performance, low power consumption, and miniaturization pose stringent challenges to packaging technology. 2.5D packaging, with its multi-chip heterogeneous integration capabilities and thermal management potential, has become a core technology for RF microsystems. However, components such as chips and RF antennas are susceptible to temperature fluctuations during system operation. High temperatures can exacerbate chip electromigration, reduce computational accuracy, and degrade RF antenna impedance characteristics, leading to signal distortion. Low temperatures increase material brittleness and reduce solder joint reliability. Extreme temperature fluctuations can also lead to interlaminar stress accumulation.

[0003] Existing packaging technologies have significant shortcomings in temperature measurement and control. While flip-chip packaging can shorten interconnect distances, temperature measurement relies on independent modules, which not only takes up valuable space and increases costs, but also lacks sufficient heat dissipation for temperature control. While fan-out packaging enables high-density pin integration, it lacks effective temperature monitoring and regulation mechanisms, making it difficult to ensure stable system operation in extreme temperature environments. While 2.5D packaging and three-dimensional stacked packaging enable high-speed signal transmission, their complex stacking structure severely hinders heat conduction, making it impossible to detect temperature changes in a timely manner and even more difficult to achieve precise temperature control. These factors fall far short of meeting the stringent requirements of RF microsystems in complex scenarios. Summary of the Invention

[0004] Based on this, it is necessary to address the above technical problems and provide an intelligent temperature-controlled RF microsystem packaging structure based on AI and microchannels that can sense temperature changes in a timely manner.

[0005] An intelligent temperature-controlled radio frequency microsystem packaging structure based on AI and microchannels, the packaging structure comprising: an antenna layer, a first temperature measurement isolation layer, an electromagnetic isolation layer, a second temperature measurement isolation layer, a chip layer, a microchannel layer, and a feed layer;

[0006] The microchannel layer is arranged above the feed layer, the chip layer is arranged above the microchannel layer, the second temperature measurement isolation layer is arranged above the chip layer, the electromagnetic isolation layer is arranged above the second temperature measurement isolation layer, the first temperature measurement isolation layer is arranged above the electromagnetic isolation layer, and the antenna layer is arranged above the first temperature measurement isolation layer;

[0007] The antenna layer, the first temperature measurement isolation layer, the electromagnetic isolation layer, the second temperature measurement isolation layer, the chip layer, the microchannel layer and the devices in each layer of the feed layer are electrically connected through silicon vias and a redistribution layer;

[0008] The first temperature measurement isolation layer includes a first SiO2 thin film layer and a radio frequency antenna temperature measurement unit below the first SiO2 thin film layer;

[0009] The second temperature measurement isolation layer includes a second SiO2 thin film layer and a chip temperature measurement unit above the second SiO2 thin film layer;

[0010] The RF antenna temperature measurement unit is used to monitor the temperature of the antenna layer to determine a first temperature adjustment strategy, and send the first temperature adjustment strategy to the chip temperature measurement unit. The chip temperature measurement unit is used to monitor the temperature of the chip layer, and determine a second temperature adjustment strategy based on the temperature of the chip layer and the received first temperature adjustment strategy, and generate a temperature adjustment instruction according to the second temperature adjustment strategy to drive the temperature adjustment device to perform temperature adjustment.

[0011] In one embodiment, the radio frequency antenna temperature measurement unit includes a first AI control chip, a first digital-to-analog converter, a first signal conditioner, and a first temperature measurement element;

[0012] The hot end of the first temperature measuring element is located directly below the RF antenna of the antenna layer, the cold end of the first temperature measuring element is electrically connected to the first signal conditioner, the first signal conditioner is electrically connected to the first digital-to-analog converter, the first digital-to-analog converter is connected to the signal input end of the first AI control chip, and the first AI control chip is connected to the silicon through-via of the first temperature measurement isolation layer through a redistribution layer.

[0013] In one embodiment, the chip temperature measurement unit includes a second AI control chip, a second digital-to-analog converter, a second signal conditioner, and a second temperature measurement element;

[0014] The hot end of the second temperature measuring element is located directly above the RF antenna chip of the chip layer, the cold end of the second temperature measuring element is electrically connected to the second signal conditioner, the second signal conditioner is electrically connected to the second digital-to-analog converter, the second digital-to-analog converter is connected to the signal input end of the second AI control chip, and the second AI control chip is connected to the silicon through-via of the second temperature measurement isolation layer through the redistribution layer.

[0015] In one embodiment, the electromagnetic isolation layer is an AlN film.

[0016] In one embodiment, the microfluidic layer includes an aluminum plate and a resistance wire;

[0017] A serpentine microchannel is etched in the aluminum plate by the DRIE process, and a liquid injection channel and a liquid outflow channel are etched at the liquid injection port and the liquid outflow port of the microchannel of the aluminum plate. The liquid injection channel and the liquid outflow channel pass through the feed layer, and the resistance wire is embedded in the microchannel. The two ends of the resistance wire are connected to the silicon through-holes of the microchannel layer through a redistribution layer.

[0018] In one embodiment, the chip layer includes a first silicon-based adapter board and a radio frequency antenna chip;

[0019] The first silicon-based adapter plate is etched with a chip embedding groove through a DRIE process, the RF antenna chip is placed in the chip embedding groove, and the RF antenna chip is connected to the silicon through-via of the chip layer through a redistribution layer.

[0020] In one embodiment, the antenna layer includes a second high-resistance silicon adapter plate and a radio frequency antenna;

[0021] The radio frequency antenna is printed on the upper surface of the second high-resistance silicon adapter board, and the lower surface of the second high-resistance silicon adapter board is in contact with the first temperature measurement isolation layer.

[0022] In one embodiment, the AI ​​and microchannel-based intelligent temperature-controlled radio frequency microsystem packaging structure further includes a microchannel temperature measurement unit located between the chip layer and the microchannel layer.

[0023] In one embodiment, the micro-channel temperature measurement unit includes: a third AI control chip, a third digital-to-analog converter, a third signal conditioner and a third temperature measurement element;

[0024] The hot end of the third temperature measuring element is located above the microchannel of the microchannel layer, the cold end of the third temperature measuring element is electrically connected to the third signal conditioner, the third signal conditioner is electrically connected to the third digital-to-analog converter, the third digital-to-analog converter is connected to the signal input end of the third AI control chip, and the third AI control chip is connected to the silicon through-via of the microchannel layer through a redistribution layer.

[0025] The above-mentioned intelligent temperature-controlled RF microsystem packaging structure based on AI and microchannels is arranged above the feed layer through the microchannel layer, the chip layer is arranged above the microchannel layer, the second temperature measurement isolation layer is arranged above the chip layer, the electromagnetic isolation layer is arranged above the second temperature measurement isolation layer, the first temperature measurement isolation layer is arranged above the electromagnetic isolation layer, and the antenna layer is arranged above the first temperature measurement isolation layer; the antenna layer, the first temperature measurement isolation layer, the electromagnetic isolation layer, the second temperature measurement isolation layer, the chip layer, the microchannel layer and the devices in each layer of the feed layer are electrically connected through silicon vias and redistribution layers; the first temperature measurement isolation layer includes The system comprises a first SiO2 thin film layer and an RF antenna temperature measurement unit below the first SiO2 thin film layer; the second temperature measurement isolation layer comprises a second SiO2 thin film layer and a chip temperature measurement unit above the second SiO2 thin film layer; the RF antenna temperature measurement unit is used to monitor the temperature of the antenna layer to determine a first temperature regulation strategy, and transmit the first temperature regulation strategy to the chip temperature measurement unit. The chip temperature measurement unit is used to monitor the temperature of the chip layer, and determine a second temperature regulation strategy based on the temperature of the chip layer and the received first temperature regulation strategy. The temperature regulation instruction is generated according to the second temperature regulation strategy to drive the temperature regulation device to perform temperature regulation. In this way, the system can quickly respond to temperature changes, dynamically adjust the temperature regulation device, achieve closed-loop temperature control, and ensure stable operation of the system over a wide temperature range. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 A front perspective schematic diagram of an intelligent temperature-controlled radio frequency microsystem packaging structure based on AI and microfluidics in one embodiment;

[0027] Figure 2 is a perspective schematic diagram of a chip temperature measurement unit in one embodiment;

[0028] Figure 3 FIG. 1 is a perspective schematic diagram of a microfluidic layer in one embodiment. DETAILED DESCRIPTION

[0029] In order to make the purpose, technical solutions and advantages of this application more clear, the following further describes this application in detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain this application and are not intended to limit this application.

[0030] The present application provides an intelligent temperature-controlled RF microsystem packaging structure based on AI and microfluidics, which is suitable for high-performance integration in artificial intelligence (AI) microsystems and real-time temperature monitoring scenarios in a wide temperature range environment, especially for the thermal management needs of key components such as chips and RF antennas.

[0031] In one embodiment, Figure 1 As shown, an intelligent temperature-controlled radio frequency microsystem packaging structure based on AI and microchannels is provided, and the packaging structure includes: an antenna layer 1, a first temperature measurement isolation layer 2, an electromagnetic isolation layer 3, a second temperature measurement isolation layer 4, a chip layer 5, a microchannel layer 6 and a feed layer 7;

[0032] The microchannel layer 6 is arranged above the feed layer 7, the chip layer 5 is arranged above the microchannel layer 6, the second temperature measurement isolation layer 4 is arranged above the chip layer 5, the electromagnetic isolation layer 3 is arranged above the second temperature measurement isolation layer 4, the first temperature measurement isolation layer 2 is arranged above the electromagnetic isolation layer 3, and the antenna layer 1 is arranged above the first temperature measurement isolation layer 2; the devices in each layer of the antenna layer 1, the first temperature measurement isolation layer 2, the electromagnetic isolation layer 3, the second temperature measurement isolation layer 4, the chip layer 5, the microchannel layer 6 and the feed layer 7 are electrically connected through silicon vias 8 and the redistribution layer 9; the first temperature measurement isolation layer 2 includes a first SiO2 thin film layer 21 and a radio frequency antenna temperature measurement unit below the first SiO2 thin film layer 21; the second temperature measurement isolation layer 4 includes a second SiO2 thin film layer 41 and a chip temperature measurement unit above the second SiO2 thin film 41 layer;

[0033] The RF antenna temperature measurement unit is used to monitor the temperature of the antenna layer 1 to determine the first temperature adjustment strategy, and send the first temperature adjustment strategy to the chip temperature measurement unit. The chip temperature measurement unit is used to monitor the temperature of the chip layer 5, and determine the second temperature adjustment strategy based on the temperature of the chip layer 5 and the received first temperature adjustment strategy. According to the second temperature adjustment strategy, a temperature adjustment instruction is generated to drive the temperature adjustment device to perform temperature adjustment.

[0034] The temperature regulating device includes a microchannel water pump for cooling and a resistance wire for heating.

[0035] Among them, the feed layer 7 uses ABF material, which has excellent dielectric properties and fine line processing capabilities. Electrical interconnection is achieved through laser blind holes and TSV. A power ground plane interlayer can be designed inside the feed layer 7 to suppress power ripple.

[0036] The external power supply is connected through the feed layer 7, which provides power to components such as the resistor wires in the microchannel layer, the chip layer 5, and the AI ​​control chip. Power is transmitted to the upper layers via the TSVs and RDLs in the feed layer, supporting functions such as heating and cooling, as well as signal processing, for the entire RF microsystem. This is an indispensable power supply layer in the packaging structure. It has excellent dielectric properties and fine circuit processing capabilities, achieving electrical interconnection through laser blind vias and TSVs.

[0037] Among them, the through-silicon via (TSV) and redistribution layer (RDL) interconnection process uses the DRIE process to form through holes in each layer. The inner wall is coated with an Al2O3 insulation layer by ALD, and then filled with chemical copper plating to form a vertical interconnection channel. The RDL is based on the semi-additive method, and the circuit pattern is defined by laser direct writing and copper is electroplated to form an interconnection network. The RDL of the antenna layer adopts an embedded microstrip line structure, and the RDL of the first temperature measurement isolation layer and the first temperature measurement isolation layer adopt differential routing.

[0038] TSV fabrication involves forming through-holes with optimized aspect ratios through the DRIE process in each layer. The inner walls are then coated with an Al2O3 insulating layer via atomic layer deposition (ALD) to prevent short circuits between silicon and metal. Electroless copper plating is then used to fill the holes, forming low-resistance, low-latency vertical interconnects. TSVs in the antenna layer are used for RF signal transmission, TSVs in the temperature isolation layer are used to extract signals such as temperature control strategies and temperature control commands, and TSVs in the microchannel layer are used for coolant channel connections.

[0039] The RDL layer utilizes a semi-additive process, with photoresist spin-coated on the top or bottom surface of each layer. Laser direct writing defines the circuit pattern, and copper electroplating forms an interconnect network with line width and spacing matching those for RF signal transmission. The antenna layer RDL utilizes an embedded microstrip structure with a controlled characteristic impedance of 50Ω to ensure high-frequency signal integrity. The RDL for the temperature isolation layer uses differential routing to reduce electromagnetic interference from thermocouple signals.

[0040] Among them, the first temperature measurement isolation layer is a composite insulating layer, and the first SiO2 thin film layer of the first temperature measurement isolation layer adopts a magnetron sputtering process to deposit SiO2 thin film, which serves as an electrical isolation layer to prevent the electromagnetic coupling between the antenna high-frequency signal and the circuits of other temperature measurement elements such as thermocouples and thermistors. Below the first temperature measurement isolation layer, thin film thermocouples (such as K-type NiCr / NiAl) or other temperature measurement elements such as thermistors are deposited by reactive magnetron sputtering, and a first AI control chip, a first digital-to-analog converter and a first signal conditioner are provided to form a radio frequency antenna temperature measurement unit. The hot end of other temperature measurement elements such as thermocouples or thermistors is located directly below the radio frequency antenna of the antenna layer, and the cold end extends to the first signal conditioner. After passing through the first signal conditioner and the first digital-to-analog converter, the signal is transmitted to the first AI control chip. The layers are connected to the upper and lower layers using a gold-gold eutectic bonding process, and the bonding interface is treated with plasma cleaning to ensure low contact thermal resistance and electrical conductivity.

[0041] Pre-bonding treatment: Each bonding surface undergoes O2 plasma cleaning to remove oxide layers and contaminants and enhance surface activity. Bonding process: A gold-gold eutectic bonding process is used, with a bonding temperature of 300°C, a pressure of 2 MPa, and a bonding time of 30 minutes. Localized additional pressure (0.5 MPa) is applied to the thermocouple area to ensure a close fit between the film and the substrate, preventing cracking of the film due to bonding stress. After bonding, the interface void ratio is tested using a scanning ultrasonic microscope (SAM), with a requirement of <0.1%.

[0042] The electromagnetic isolation layer utilizes a highly thermally conductive AlN film as both an electromagnetic shield and a heat conductor, deposited via a reactive sputtering process. This layer isolates the upper and lower thermocouple signals, preventing crosstalk. Its thickness is precisely controlled through process parameters to ensure alignment with the thermal expansion coefficient of the silicon substrate, preventing stress accumulation after multi-layer stacking.

[0043] The second temperature measurement isolation layer has a similar structure to the first temperature measurement isolation layer, with a SiO2 insulating layer as the bottom layer and thin-film thermocouples (such as K-type NiCr / NiAl), thermal resistors, and other temperature measurement elements integrated above for real-time monitoring of the RF antenna chip junction temperature. The SiO2 thin film layer can also serve as a mask layer for DRIE etching of chip grooves. By utilizing its etching selectivity with silicon materials, high-precision grooves are formed in the chip embedding area, ensuring close contact between the hot end of the temperature measurement element and the surface of the RF antenna chip. Intra-layer TSVs and RDLs are used to transmit thermocouple signals, and a differential routing design is used to reduce common-mode interference.

[0044] Among them, the first temperature measurement isolation layer and the second temperature measurement isolation layer are sequentially deposited with SiO2 insulating layer, NiCr film (positive electrode) and NiAl film (negative electrode) on the surface of the isolation layer by magnetron sputtering. The sputtering power is precisely controlled to ensure uniform film particle size and low surface roughness, thereby improving temperature measurement sensitivity.

[0045] Among them, ultraviolet lithography technology is used to define the thermocouple pair pattern, and ion beam etching (IBE) is used to remove excess material to form a thermocouple pair with uniform spacing.

[0046] Among them, cross alignment marks are pre-etched on the second SiO2 thin film layer, and real-time calibration is performed through an optical microscope to ensure that the position deviation between the hot end of the thermocouple and the surface of the device under test is controlled at the sub-micron level, avoiding temperature measurement errors caused by position offset.

[0047] The above-mentioned intelligent temperature-controlled radio frequency microsystem packaging structure based on AI and microchannel is arranged on the feed layer through the microchannel layer, the chip layer is arranged on the microchannel layer, the second temperature measurement isolation layer is arranged on the chip layer, the electromagnetic isolation layer is arranged on the second temperature measurement isolation layer, the first temperature measurement isolation layer is arranged on the electromagnetic isolation layer, and the antenna layer is arranged on the first temperature measurement isolation layer; the devices in the antenna layer, the first temperature measurement isolation layer, the electromagnetic isolation layer, the second temperature measurement isolation layer, the chip layer, the microchannel layer and the feed layer are electrically connected through silicon vias and redistribution layers; the first temperature measurement isolation layer includes a first SiO The second temperature measurement isolation layer includes the second SiO2 thin film layer and the RF antenna temperature measurement unit below the first SiO2 thin film layer; the second SiO2 thin film layer and the chip temperature measurement unit above the second SiO2 thin film layer; the RF antenna temperature measurement unit is used to monitor the temperature of the antenna layer to determine a first temperature regulation strategy, and transmit the first temperature regulation strategy to the chip temperature measurement unit. The chip temperature measurement unit is used to monitor the temperature of the chip layer and determine a second temperature regulation strategy based on the chip layer temperature and the received first temperature regulation strategy. The second temperature regulation strategy generates a temperature regulation instruction to drive the temperature regulation device to perform temperature regulation. This allows for rapid response to temperature changes, dynamic adjustment of the temperature regulation device, and closed-loop temperature control, ensuring stable operation of the system over a wide temperature range.

[0048] like Figure 1 As shown, in one embodiment, the RF antenna temperature measurement unit includes a first AI control chip 211, a first digital-to-analog converter 212, a first signal conditioner 213 and a first temperature measuring element 214; the hot end of the first temperature measuring element 214 is located directly below the RF antenna 12 of the antenna layer 1, the cold end of the first temperature measuring element 214 is electrically connected to the first signal conditioner 213, the first signal conditioner 213 is electrically connected to the first digital-to-analog converter 212, the first digital-to-analog converter 212 is connected to the signal input end of the first AI control chip 211, and the first AI control chip 211 is connected to the through silicon via 8 of the first temperature measurement isolation layer 2 through the redistribution layer 9.

[0049] PCB traces may be used to electrically connect the first signal conditioner 213 and the first digital-to-analog converter 212 .

[0050] PCB wiring may be used to connect the first digital-to-analog converter 212 to the signal input terminal of the first AI control chip 211 .

[0051] The first signal conditioner 213 may amplify and filter the received signal.

[0052] The first signal conditioner 213 may be a signal amplifier.

[0053] The first temperature measuring element 214 may be a thin film thermocouple or a thermal resistor.

[0054] Among them, the first SiO2 film layer uses SiO2 as an electrical isolation layer, and the first temperature measuring element 214 uses K-type NiCr / NiAl film, which has the characteristics of high sensitivity and wide temperature resistance. A thermal resistor using a thermistor film or other temperature measuring elements can also be used, which are stable with temperature changes and high measurement accuracy.

[0055] Among them, the first temperature measuring element 214 converts the thermoelectric potential into a voltage signal, which is digitized by a 24-bit high-precision ADC chip (i.e., the first digital-to-analog converter 212) after low-noise differential amplification by the first signal conditioner 213, and then transmitted to the AI ​​chip (i.e., the first AI control chip 211). After receiving the digital signal, the first AI control chip 211 can compensate for the cold end temperature drift and the influence of the calibration thermal resistance through a built-in algorithm to obtain the true temperature value, and execute the polymorphic control logic according to the preset threshold. When the temperature exceeds the preset threshold, the water pump driving the microchannel increases the speed to increase the coolant flow rate, while reducing the power consumption of the chip; when the temperature is lower than the low temperature threshold, the resistance wire in the microchannel is driven to heat the fluid, while reducing the liquid flow rate in the microchannel and adjusting the chip operating frequency; in the normal temperature zone, the microchannel flow rate is kept constant and the chip operates at full frequency, so as to achieve efficient acquisition, processing and response of the temperature signal and ensure the thermal stability of the system.

[0056] In one example, the hot end of a thermocouple (K-type NiCr / NiAl thin film) or other temperature measurement elements, such as a thermal resistor, in the first temperature measurement isolation layer is placed directly below the RF antenna radiating patch, with a micron-level spacing from the RF antenna surface (which can be achieved by DRIE-etched grooves). These elements increase the coverage of the temperature measurement area and improve temperature sampling uniformity. The hot end is electrically isolated from the antenna by a SiO2 insulation layer (bottom layer) and physically separated from the underlying thermocouple group by an AlN electromagnetic isolation layer to prevent signal crosstalk.

[0057] In one embodiment, the chip temperature measurement unit includes a second AI control chip 411, a second digital-to-analog converter 412, a second signal conditioner 413 and a second temperature measuring element 414; the hot end of the second temperature measuring element 414 is located directly above the RF antenna chip 52 of the chip layer 5, the cold end of the second temperature measuring element 414 is electrically connected to the second signal conditioner 413, the second signal conditioner 413 is electrically connected to the second digital-to-analog converter 412, the second digital-to-analog converter 412 is connected to the signal input end of the second AI control chip 411, and the second AI control chip 411 is connected to the through-silicon via 8 of the second temperature measurement isolation layer 4 through the redistribution layer 9.

[0058] The second temperature measuring element 414 may be a thin film thermocouple or a thermal resistor.

[0059] Among them, the second SiO2 film layer uses SiO2 as an electrical isolation layer, and the second temperature measuring element 414 uses K-type NiCr / NiAl film, which has the characteristics of high sensitivity and wide temperature resistance. A thermal resistor using a thermistor film or other temperature measuring elements can also be used, which are stable with temperature changes and have high measurement accuracy.

[0060] In one example, other temperature measuring elements, such as thin-film thermocouples or thermal resistors, in the second temperature measurement isolation layer are integrated above the chip layer. The hot end of the thermocouple or thermal resistor can be bonded to the top surface of the RF antenna chip through a groove bonding process, while the cold end is integrated into the AI ​​control chip via PCB traces through a second signal conditioner and a second digital-to-analog converter. Thermocouple or thermal resistor pairs are arranged diagonally in areas where chip heat sources are concentrated (such as computing units and power modules). The spacing between individual thermocouple pairs is optimized based on chip thermal simulation results to ensure full coverage of hotspot temperature areas.

[0061] Among them, the thin-film thermocouples, thermal resistors and other temperature measurement components in the first temperature measurement isolation layer and the second temperature measurement isolation layer adopt a layered embedded design and are precisely deployed in the key temperature measurement areas of the AI ​​RF microsystem packaging adapter board to achieve real-time perception of the RF antenna chip and RF antenna temperature.

[0062] Among them, the RF antenna temperature measurement unit and the chip temperature measurement unit correspond to the thermocouple temperature measurement system as the object to be measured. The measuring end (hot end) of the thermocouple of the RF antenna temperature measurement unit and the chip temperature measurement unit is directly placed above the object to be measured, and the temperature change signal is obtained through heat conduction; because the output signal is weak and easily affected by the cold end temperature, the cold end of the thermocouple needs to be extended to a temperature stable place through a compensation wire with matching material, and connected to the signal conditioner for processing; to ensure the stability and efficiency of signal transmission, PCB traces are used to achieve short-path connection between the signal conditioner and the analog-to-digital converter (ADC), and between the ADC and the AI ​​control chip. After the ADC converts the analog signal into a digital signal, it is transmitted to the AI ​​control chip data acquisition system via the PCB trace to complete data processing, storage, and display operations.

[0063] It should be understood that the required component types and connection methods in the RF antenna temperature measurement unit and the chip temperature measurement unit are the same. The difference lies in the location of the temperature measuring element and the number of required temperature measuring subunits. The temperature measuring element (i.e., the first temperature measuring element) in the RF antenna temperature measurement unit is used to measure the temperature of the RF antenna. Therefore, the number of temperature measuring subunits is determined by the number of measured areas divided by the structure of the RF antenna, and the location of the temperature measuring element is determined by the location of the measured area of ​​the RF antenna. The temperature measuring element (i.e., the second temperature measuring element) in the chip temperature measurement unit is used to measure the temperature of the RF antenna chip. Therefore, the number of temperature measuring subunits is determined by the number of RF antenna chips, and the location of the temperature measuring element is determined by the location of the RF antenna chip.

[0064] Among them, a digital-to-analog converter, a signal conditioner and a temperature measuring element constitute a temperature measuring subunit.

[0065] It should be understood that both the RF antenna temperature measurement unit and the chip temperature measurement unit can have multiple temperature measurement sub-units to achieve temperature measurement of multiple areas of the measured layer.

[0066] In one example, if Figure 2 The schematic diagram of the chip temperature measurement unit is shown in FIG. Figure 2 The chip temperature measurement unit is shown to have four temperature measurement subunits, and the second temperature measurement element 414 of each temperature measurement subunit is located directly above the corresponding RF antenna chip 52. Figure 2 In order to clearly see the positional relationship between the second temperature measuring element 414 and the radio frequency antenna chip 52, the radio frequency antenna chip 52 is shown in a perspective manner. Figure 2 In the figure, the RF antenna chip 52 is actually covered with a second SiO2 thin film layer, on which the second temperature measuring element 414 is located. The connection method of the various components in the temperature measuring subunit is as follows: the hot end of the second temperature measuring element 414 is located directly above the RF antenna chip 52 in the chip layer, and the cold end of the second temperature measuring element 414 extends to the input port of the second signal conditioner 413 to achieve electrical connection. The second signal conditioner 413 is electrically connected to the second digital-to-analog converter 412 via a PCB trace 415. The second digital-to-analog converter 412 is connected to the signal input terminal of the second AI control chip 411 via the PCB trace 415. The second AI control chip 411 is connected to the through-silicon via 8 of the second temperature measurement isolation layer 4 via the redistribution layer 9.

[0067] As we understand it, the structure of the RF antenna temperature measurement unit is similar to that of the chip temperature measurement unit, so it will not be described in detail.

[0068] Among them, the preparation of thin-film thermocouples adopts a magnetron sputtering-photolithography-etching process chain to achieve micron-level precision thin-film deposition and patterning. First, the SiO2 or AlN film is subjected to plasma surface activation treatment to remove organic pollutants and form a nucleophilic surface, thereby enhancing the adhesion of subsequent films. Then, the SiO2 insulating layer is deposited by PECVD technology to construct an electrical isolation barrier with a low dielectric constant. Then, NiCr / NiAl thermoelectrode layers are alternately deposited by magnetron sputtering under precisely controlled process parameters to form a nanoscale grain structure and an ultra-smooth surface, ensuring stable thermoelectric conversion performance. Subsequently, ultraviolet photoresist is combined with laser direct writing technology for graphical definition to form micro-nanoscale temperature measurement areas and signal transmission lines. Finally, the selective removal of materials is completed through an ion beam etching process to construct a high-precision thermoelectrode pair structure, realizing high-sensitivity detection of temperature fields within the microsystem.

[0069] Among them, the interlayer interconnection devices of stacked thin-film thermocouples, thermistors and other temperature measuring elements use the through-silicon via (TSV) three-dimensional integration process to achieve vertical electrical interconnection: first, a high-aspect-ratio micropore array is processed on the insulating substrate through deep reactive ion etching (DRIE), and a nanoscale barrier layer and seed layer are formed by atomic layer deposition (ALD). Then, copper interconnect pillars are filled by electrochemical deposition to achieve signal transmission between different functional thin film layers; then, the chemical mechanical polishing (CMP) process is used to flatten the surface, and the micro-nanoscale electrode pattern is defined by combining photoresist mask and ion beam etching technology. Finally, the precise alignment and electrical interconnection of multi-layer heterogeneous films are achieved through a low-temperature bonding process.

[0070] Among them, thermocouple signal processing is achieved through a three-level link: analog amplification-analog-to-digital conversion-intelligent control, ensuring high-precision acquisition and real-time response of temperature data. The specific process is as follows:

[0071] Analog signal conditioning: Each set of thermocouples (NiCr / NiAl) or RTDs converts the thermoelectric potential difference into a voltage signal, suppressing common-mode interference and improving the signal-to-noise ratio. A signal conditioner uses a low-noise operational amplifier to differentially amplify the full-bridge output signal with a gain of 1000-5000 times, increasing the signal amplitude to meet subsequent analog-to-digital conversion requirements.

[0072] Analog-to-digital conversion: The amplified analog signal is digitized using a 24-bit high-precision ADC chip, ensuring that high-frequency components of temperature fluctuations are not lost. A digital filtering algorithm suppresses power frequency interference and environmental noise, achieving precise quantization with microvolt resolution. To eliminate the effects of temperature drift, the system integrates high-precision circuitry for real-time calibration of the measurement reference.

[0073] In one example, a first AI control chip receives a digital signal and can compensate for the temperature drift of the cold end of the thermocouple through a built-in algorithm, calibrate the thermal resistance effect in the multi-layer package, and output the true temperature value of the RF antenna. The first AI control chip determines a first temperature adjustment strategy based on the true temperature value of the RF antenna and a preset threshold, and sends the first temperature adjustment strategy to a second AI control chip. The second AI control chip can compensate for the temperature drift of the cold end of the thermocouple through a built-in algorithm, calibrate the thermal resistance effect in the multi-layer package, output the true temperature value of the RF antenna chip, and determine a preliminary temperature adjustment strategy based on the true temperature value of the RF antenna chip and a preset threshold. The first temperature adjustment strategy is then combined to determine the second temperature adjustment strategy, and a temperature adjustment instruction is generated according to the second temperature adjustment strategy to drive the temperature adjustment device to perform temperature adjustment.

[0074] Among them, the first temperature regulation strategy includes the driven temperature regulator and the adjustment parameter range, the preliminary temperature regulation strategy includes the driven temperature regulator and the adjustment parameter range, and the second temperature regulation strategy includes the driven temperature regulator and the adjustment parameter. According to the analysis of the first temperature regulation strategy and the preliminary temperature regulation strategy, if the driven temperature regulators in the first temperature regulation strategy and the preliminary temperature regulation strategy are the same and there is an intersection in the adjustment parameter range, the middle value of the intersection parameter range is taken as the adjustment parameter of the second temperature regulation strategy; if the driven temperature regulators in the first temperature regulation strategy and the preliminary temperature regulation strategy are different or the driven temperature regulators are the same but there is no intersection in the adjustment parameter range, the preliminary temperature regulation strategy is given priority for regulation, and the middle value of the adjustment parameter range in the preliminary temperature regulation strategy is taken as the adjustment parameter of the second temperature regulation strategy.

[0075] The adjustment parameter is an adjustment parameter of the driven temperature regulator, for example, if the temperature regulator is a microchannel water pump, the adjustment parameter is the flow rate; if the temperature regulator is a resistance wire, the adjustment parameter is the current.

[0076] Among them, the temperature regulation principles include:

[0077] High temperature response: The second AI control chip drives the microchannel water pump to increase the speed through PWM signals according to the second temperature regulation strategy. At the same time, it triggers the chip to dynamically adjust the operating voltage and frequency, reduce operating power consumption to reduce heat generation, and simultaneously activate the early warning mechanism to ensure that the temperature of key components quickly drops to a safe range to avoid performance degradation or structural failure caused by high temperature.

[0078] Low temperature response: The second AI control chip controls the activation of heating elements in the microchannel, such as resistance wires, according to the second temperature regulation strategy, heating the coolant in pulse mode while maintaining a low flow rate circulation to prevent freezing; the second AI control chip automatically switches to a low-temperature adaptation working mode, optimizing voltage and frequency parameters to ensure the mechanical properties of the material and the reliability of the circuit conduction, avoiding abnormal signal transmission or component damage in low-temperature environments.

[0079] Normal temperature zone: When the chip and antenna temperatures are within the normal range, the microchannel flow rate is kept constant, reducing power consumption while meeting basic heat dissipation requirements. The second AI control chip operates at full frequency to fully unleash computing performance. The system continuously monitors temperature data and optimizes thermal management strategies through algorithms, dynamically balancing heat dissipation efficiency and energy efficiency, keeping temperature fluctuations within an ideal range and ensuring the stable operation of the microsystem and high-frequency signal transmission.

[0080] It should be understood that the RF antenna temperature measurement unit and the chip temperature measurement unit have achieved a significant improvement in temperature monitoring capabilities. The thin isolation layer and high thermal conductivity material reduce the thermal resistance of the heat transfer path, enabling the thin film thermocouple to quickly sense temperature changes on the RF antenna chip and the surface of the RF antenna. Combined with the low-noise signal transmission path design, it can accurately capture temperature fluctuations and provide real-time feedback, providing reliable data support for thermal management actions.

[0081] In one embodiment, the electromagnetic isolation layer 3 is an AlN thin film.

[0082] Among them, the electromagnetic isolation layer 3 adopts AlN thin film, which has high thermal conductivity and good thermal matching. It can be deposited by reactive sputtering process, and has both electromagnetic shielding and heat conduction functions. It can isolate the signals of other temperature measuring elements such as upper and lower thermocouples or thermal resistors and quickly conduct heat.

[0083] like Figure 3 In one embodiment, the microfluidic layer 6 includes an aluminum plate 61 and a resistance wire 62; a serpentine microchannel 63 is etched in the aluminum plate 61 by a DRIE process, and a liquid injection channel 64 and a liquid outflow channel 65 are etched at the liquid injection port and liquid outflow port of the microfluidic channel 63 of the aluminum plate 61. The liquid injection channel 64 and the liquid outflow channel 65 pass through the feed layer 7, and the resistance wire 62 is embedded in the microfluidic channel 63. The two ends of the resistance wire 62 are connected to the silicon through-hole 8 of the microfluidic layer 6 through the redistribution layer 9.

[0084] The aluminum plate 61 is etched with serpentine microchannels 63 by DRIE process to form a serpentine microchannel network.

[0085] The inner wall of the microchannel 63 may also be coated with a Ni—P layer by electrochemical deposition.

[0086] The microchannel 63 is processed by etching the channel through the DRIE process. The inner wall of the microchannel 63 can also be coated with an Al2O3 film using ALD to prevent corrosion. The inlet and outlet are connected to the external pump system and pressure tested to ensure no leakage.

[0087] Channel Etching: The microchannel layer is etched into the aluminum plate 61 using a DRIE process, forming a structure with matching width and depth. The channel spacing is optimized based on thermal simulation results to ensure uniform coolant coverage of the hot area. Sealing: The inner wall of the channel is treated with an ALD-deposited Al2O3 film (50nm thick) to prevent corrosion. The channel inlet and outlet are connected to the external pump system via TSVs and RDLs, and pressure testing (0.5MPa) ensures no leaks.

[0088] In one embodiment, the chip layer 5 includes a first silicon-based adapter plate 51 and a radio frequency antenna chip 52;

[0089] The first silicon-based adapter plate 51 is etched with a chip embedding groove through the DRIE process, and the RF antenna chip 52 is placed in the chip embedding groove. The RF antenna chip 52 is connected to the silicon through-via 8 of the chip layer 5 through the redistribution layer 9.

[0090] Among them, high-density RDL is arranged in the chip layer 5 to realize the electrical connection between the RF antenna chip 52 and the silicon through-via.

[0091] Among them, the pins in the RF antenna chip 52 are connected to the redistribution layer 9 by welding to form a Figure 1 Solder joint 53 is shown.

[0092] Among them, the use of high-resistance silicon material for the antenna layer can suppress the parasitic loss of high-frequency signals.

[0093] Among them, when the RF antenna chip 52 is installed on the first silicon-based adapter board 51, the first silicon-based adapter board 51 needs to be cleaned and metallized to form a matching pad, and then the chip is fixed by eutectic welding or conductive glue, and then flip-chip welding or wire bonding is used to achieve signal and power connection. At the same time, the mechanical reliability is enhanced by bottom filling, and the RF matching is optimized with the help of structures such as microstrip lines on the first silicon-based adapter board 51, and a shielding cover is used to isolate electromagnetic interference. Finally, the package and sealing are performed to ensure the electrical connection stability and RF performance between the RF antenna chip 52 and the first silicon-based adapter board 51.

[0094] It should be understood that the number of RF antenna chips 52 in the chip layer 5 is set according to actual conditions and is not limited here.

[0095] In one embodiment, the antenna layer 1 includes a second high-resistance silicon adapter board 11 and a radio frequency antenna 12; the radio frequency antenna 12 is printed on the upper surface of the second high-resistance silicon adapter board 11, and the lower surface of the second high-resistance silicon adapter board 11 is in contact with the first temperature measurement isolation layer 2.

[0096] The radio frequency antenna 12 may be a planar logarithmic spiral antenna or a dipole antenna, etc., which can realize the transmission and reception of radio frequency signals in the 24 GHz-40 GHz frequency band.

[0097] It should be understood that antenna layer 1 utilizes a high-resistance silicon adapter plate with a planar logarithmic spiral antenna or dipole antenna integrated on its surface, enabling RF signal transmission and reception in the 24GHz-40GHz band. The high-resistance silicon material suppresses parasitic losses in high-frequency signals, ensuring efficient signal transmission. The TSV structure within the layer vertically penetrates to the underlying layer, forming a low-loss transmission path for RF signals while also suppressing electromagnetic interference.

[0098] In one embodiment, the intelligent temperature-controlled radio frequency microsystem packaging structure based on AI and microchannels further includes a microchannel temperature measurement unit located between the chip layer 5 and the microchannel layer 6 .

[0099] In one embodiment, the microchannel temperature measurement unit includes: a third AI control chip, a third digital-to-analog converter, a third signal conditioner and a third temperature measuring element; the hot end of the third temperature measuring element is located above the microchannel of the microchannel layer 6, the cold end of the third temperature measuring element is electrically connected to the third signal conditioner, the third signal conditioner is electrically connected to the third digital-to-analog converter, the third digital-to-analog converter is connected to the signal input end of the third AI control chip, and the third AI control chip is connected to the through-silicon via 8 of the microchannel layer 6 through the redistribution layer 9.

[0100] The aforementioned AI- and microfluidic-based intelligent temperature-controlled RF microsystem packaging structure deeply integrates high-precision thin-film thermocouple or RTD arrays with AI control chips to build an integrated platform for real-time temperature monitoring and dynamic control. This solution utilizes multi-node thin-film thermocouple or RTD temperature sensors to achieve high-resolution acquisition of the microsystem's entire thermal field, proactively avoiding overheating risks through adaptive temperature control strategies and extending equipment life. At the same time, the system can be linked to a microfluidic cooling module to intelligently adjust the flow channel flow according to the temperature gradient, effectively improving heat exchange efficiency.

[0101] Furthermore, in terms of process compatibility and structural reliability, the thermal matching design of the isolation layer material and the silicon-based adapter plate ensures the stability of the thermocouple film in processes such as wafer bonding and etching. After multiple thermal cycle tests, the bonding interface performance remains stable and the reliability of the thermocouple structure is significantly enhanced, meeting the integration requirements in complex process environments.

[0102] Furthermore, thermal management efficiency and system performance optimization are reflected in the coordinated adjustment of dynamic thermal control logic, microchannels, and chip power consumption. The heat dissipation strategy and chip operating status are flexibly adjusted according to real-time temperature data. While ensuring the temperature stability of key components, it effectively reduces power consumption and improves signal transmission quality, achieving a balance between thermal management and system performance, and providing guarantees for the stable operation of AI microsystems in high-load scenarios.

[0103] Furthermore, the improvement in integration density and compatibility is due to the compact design and process scalability of the seven-layer architecture. The micron-level thin-film thermocouples combined with the standardized packaging process can realize temperature sensing functions without additional volume, and are suitable for a variety of chip types and application scenarios. While meeting the high integration requirements of AI microsystems, it reduces the process threshold and production line adaptation costs.

[0104] Furthermore, electromagnetic compatibility and signal reliability are guaranteed through multi-physics field isolation design and power integrity optimization. The isolation layer and TSV and RDL routing technologies effectively suppress signal crosstalk, ensuring the accuracy of temperature signal acquisition and the stability of high-frequency signal transmission, avoiding the impact of electromagnetic interference on system performance and improving overall signal reliability.

[0105] It not only achieves efficient electrical interconnection, but also becomes a low-noise transmission path for thermocouple or thermistor signals; the integrated integration of thin-film thermocouples or thermistors and the isolation layer completely eliminates the interface thermal resistance problem of traditional mounting processes, and increases the temperature response speed to milliseconds, providing solid technical support for real-time thermal management and reliability improvement of AI microsystems.

[0106] By embedding thin-film thermocouples or thermal resistors in multiple layers, precise monitoring of the RF antenna chip and RF antenna temperature is achieved. The structure adopts a layered design: the chip temperature monitoring unit consists of a SiO2 insulation layer and a thermocouple or thermal resistor, which is attached to the chip surface for temperature measurement; the RF antenna monitoring unit consists of the same SiO2 insulation layer and a thermocouple or thermal resistor, and is deployed near the antenna feed point; the two sets of thermocouples or thermal resistors are separated by an AlN insulation layer to prevent crosstalk. The through-silicon via (TSV), redistribution layer (RDL), microchannel, signal conditioner, feed layer and AI control chip are integrated as a whole, and interconnection and coordination are achieved through wafer-level bonding. Thermocouples have high sensitivity and wide temperature resistance, while thermal resistors are stable with temperature changes and have high measurement accuracy. Together with other temperature measuring components, the AlN high thermal conductivity insulation layer can quickly respond to temperature changes. The temperature signal is transmitted to the underlying AI control chip via TSV and RDL. The algorithm dynamically adjusts the microchannel coolant flow and resistance wire to achieve temperature closed-loop control, ensuring stable operation of the system over a wide temperature range.

[0107] The above-mentioned intelligent temperature-controlled RF microsystem packaging structure of AI and microfluidics is designed to improve the operational reliability of the AI ​​microsystem, assist in structural optimization design and achieve health status management, and can intelligently control the flow rate of the microfluidic channel to optimize the heat dissipation effect. The market prospects are broad for the needs of environmental adaptability, reliability and miniaturization. It can be directly embedded in the existing 2.5D packaging process flow, and use mature magnetron sputtering, lithography and wafer bonding processes to achieve large-scale mass production. The process compatibility is strong and the production cost is controllable. Through real-time temperature monitoring and thermal management optimization, this structure can significantly reduce the risk of chip failure caused by abnormal temperature, extend the system life, and at the same time improve the signal stability of the RF module in complex temperature domains, meeting the needs of high-end scenarios such as autonomous driving and satellite communications that are sensitive to temperature.

[0108] Traditional temperature monitoring relies on external patch sensors with the following limitations: Difficulty in deployment: External sensors cannot be embedded in key areas inside the package, such as the bottom of the chip and the antenna feed point, resulting in delayed monitoring and insufficient accuracy; Insufficient compatibility: Independent temperature measurement modules require additional packaging space, have poor compatibility with the 2.5D multi-layer stacking process, and are difficult to meet miniaturization requirements; Response lag: Dynamic temperature changes cannot be fed back in real time, and dynamic power consumption adjustment and thermal failure warnings of the chip cannot be supported. The microchannel layer is arranged above the feed layer, the chip layer is arranged above the microchannel layer, the second temperature measurement isolation layer is arranged above the chip layer, the electromagnetic isolation layer is arranged above the second temperature measurement isolation layer, the first temperature measurement isolation layer is arranged above the electromagnetic isolation layer, and the antenna layer is arranged above the first temperature measurement isolation layer; the devices in the antenna layer, the first temperature measurement isolation layer, the electromagnetic isolation layer, the second temperature measurement isolation layer, the chip layer, the microchannel layer and the feed layer are electrically connected through silicon vias and redistribution layers; the first temperature measurement isolation layer includes a first SiO2 thin film layer and a radio frequency antenna temperature measurement unit below the first SiO2 thin film layer; the second temperature measurement isolation layer includes a second SiO2 thin film layer and a chip temperature measurement unit above the second SiO2 thin film layer; the radio frequency antenna temperature measurement unit is used to monitor the temperature of the antenna layer to determine a first temperature adjustment strategy and send the first temperature adjustment strategy to the chip temperature measurement unit; the chip temperature measurement unit is used to monitor the temperature of the chip layer and determine a second temperature adjustment strategy based on the temperature of the chip layer and the received first temperature adjustment strategy, and generate a temperature adjustment instruction according to the second temperature adjustment strategy to drive the temperature adjustment device to perform temperature adjustment. It solves problems such as difficult deployment, insufficient compatibility, and delayed response.

[0109] The technical features of the above embodiments can be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0110] The above-described embodiments merely represent several implementation methods of the present application. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the present invention. It should be noted that a person skilled in the art could make various modifications and improvements without departing from the spirit of the present application, all of which fall within the scope of protection of the present application. Therefore, the scope of protection of the present patent application shall be determined by the appended claims.

Claims

1. An intelligent temperature-controlled radio frequency microsystem packaging structure based on AI and microfluidics, characterized in that: The packaging structure includes: an antenna layer, a first temperature measurement isolation layer, an electromagnetic isolation layer, a second temperature measurement isolation layer, a chip layer, a microchannel layer and a feed layer; The microchannel layer is arranged above the feed layer, the chip layer is arranged above the microchannel layer, the second temperature measurement isolation layer is arranged above the chip layer, the electromagnetic isolation layer is arranged above the second temperature measurement isolation layer, the first temperature measurement isolation layer is arranged above the electromagnetic isolation layer, and the antenna layer is arranged above the first temperature measurement isolation layer; The antenna layer, the first temperature measurement isolation layer, the electromagnetic isolation layer, the second temperature measurement isolation layer, the chip layer, the microchannel layer and the devices in each layer of the feed layer are electrically connected through silicon vias and a redistribution layer; The first temperature measurement isolation layer includes a first SiO2 thin film layer and a radio frequency antenna temperature measurement unit below the first SiO2 thin film layer; The second temperature measurement isolation layer includes a second SiO2 thin film layer and a chip temperature measurement unit above the second SiO2 thin film layer; The RF antenna temperature measurement unit is used to monitor the temperature of the antenna layer to determine a first temperature adjustment strategy, and send the first temperature adjustment strategy to the chip temperature measurement unit. The chip temperature measurement unit is used to monitor the temperature of the chip layer, and determine a second temperature adjustment strategy based on the temperature of the chip layer and the received first temperature adjustment strategy, and generate a temperature adjustment instruction according to the second temperature adjustment strategy to drive the temperature adjustment device to perform temperature adjustment.

2. The intelligent temperature-controlled radio frequency microsystem packaging structure based on AI and microchannels according to claim 1 is characterized in that: The radio frequency antenna temperature measurement unit includes a first AI control chip, a first digital-to-analog converter, a first signal conditioner and a first temperature measurement element; The hot end of the first temperature measuring element is located directly below the RF antenna of the antenna layer, the cold end of the first temperature measuring element is electrically connected to the first signal conditioner, the first signal conditioner is electrically connected to the first digital-to-analog converter, the first digital-to-analog converter is connected to the signal input end of the first AI control chip, and the first AI control chip is connected to the silicon through-via of the first temperature measurement isolation layer through a redistribution layer.

3. The intelligent temperature-controlled radio frequency microsystem packaging structure based on AI and microchannels according to claim 1 is characterized in that: The chip temperature measurement unit includes a second AI control chip, a second digital-to-analog converter, a second signal conditioner and a second temperature measurement element; The hot end of the second temperature measuring element is located directly above the RF antenna chip of the chip layer, the cold end of the second temperature measuring element is electrically connected to the second signal conditioner, the second signal conditioner is electrically connected to the second digital-to-analog converter, the second digital-to-analog converter is connected to the signal input end of the second AI control chip, and the second AI control chip is connected to the silicon through-via of the second temperature measurement isolation layer through the redistribution layer.

4. The intelligent temperature-controlled radio frequency microsystem packaging structure based on AI and microchannels according to claim 1 is characterized in that: The electromagnetic isolation layer is an AlN thin film.

5. The intelligent temperature-controlled radio frequency microsystem packaging structure based on AI and microchannels according to claim 1 is characterized in that: The micro-channel layer includes an aluminum plate and a resistance wire; A serpentine microchannel is etched in the aluminum plate by the DRIE process, and a liquid injection channel and a liquid outflow channel are etched at the liquid injection port and the liquid outflow port of the microchannel of the aluminum plate. The liquid injection channel and the liquid outflow channel pass through the feed layer, and the resistance wire is embedded in the microchannel. The two ends of the resistance wire are connected to the silicon through-holes of the microchannel layer through a redistribution layer.

6. The intelligent temperature-controlled radio frequency microsystem packaging structure based on AI and microchannels according to claim 1 is characterized in that: The chip layer includes a first silicon-based adapter board and a radio frequency antenna chip; The first silicon-based adapter plate is etched with a chip embedding groove through a DRIE process, the RF antenna chip is placed in the chip embedding groove, and the RF antenna chip is connected to the silicon through-via of the chip layer through a redistribution layer.

7. The intelligent temperature-controlled radio frequency microsystem packaging structure based on AI and microchannels according to claim 1 is characterized in that: The antenna layer includes a second high-resistance silicon adapter plate and a radio frequency antenna; The radio frequency antenna is printed on the upper surface of the second high-resistance silicon adapter board, and the lower surface of the second high-resistance silicon adapter board is in contact with the first temperature measurement isolation layer.

8. The intelligent temperature-controlled radio frequency microsystem packaging structure based on AI and microchannels according to claim 1 is characterized in that: The AI ​​and microchannel-based intelligent temperature-controlled radio frequency microsystem packaging structure further includes a microchannel temperature measurement unit located between the chip layer and the microchannel layer.

9. The intelligent temperature-controlled radio frequency microsystem packaging structure based on AI and microchannels according to claim 8, characterized in that: The micro-channel temperature measurement unit includes: a third AI control chip, a third digital-to-analog converter, a third signal conditioner and a third temperature measurement element; The hot end of the third temperature measuring element is located above the microchannel of the microchannel layer, the cold end of the third temperature measuring element is electrically connected to the third signal conditioner, the third signal conditioner is electrically connected to the third digital-to-analog converter, the third digital-to-analog converter is connected to the signal input end of the third AI control chip, and the third AI control chip is connected to the silicon through-via of the microchannel layer through a redistribution layer.

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