Display panel, manufacturing method thereof and electronic device

Abstract

Embodiments of the present application provide a display panel, a manufacturing method thereof and an electronic device, and relate to the technical field of display. The display panel effectively avoids water vapor penetration and reduces the risk of packaging failure. The display panel comprises an opening, a transition area and a picture display area; a substrate; a display layer located on one side of the substrate, the display layer comprising a cathode, the cathode comprising a first cathode part located in the transition area; an isolation column located on one side of the substrate and in the transition area; a first film layer located on one side of the isolation column facing the substrate and in contact with the isolation column; the isolation column comprises an insulating isolation part, at least part of the sidewall of the insulating isolation part is recessed to form a notch in the direction towards the inside of the insulating isolation part, the surface of the insulating isolation part away from the substrate is a first surface, and the surface of the insulating isolation part towards the substrate and in contact with the first film layer is a second surface; the first cathode part extending on the first film layer is disconnected with the first cathode part extending on the first surface at the notch.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of display, more particularly to a display panel, a manufacturing method thereof and an electronic device. BACKGROUND

[0002] In recent years, the in-screen hole design of a display panel has become a development trend. Such a display panel can set an optical device such as a camera in a hole in a display area, so as to avoid occupying space in a frame area. On the premise of ensuring the photographing effect and the display effect, such a design is an optimal solution for achieving a full-screen.

[0003] Taking an organic light-emitting diode (OLED) display panel as an example, after a hole is set in the display area, the cathode of a light-emitting device is disconnected at the hole. Water vapor in the hole is likely to penetrate into the display area along the cathode, thereby affecting the performance of devices in the display panel. Therefore, the prior art usually sets a separation column around the hole, so that the cathode is disconnected at the separation column, so as to cut off the penetration path of the water vapor. However, the existing separation column may cause a risk of packaging failure of the display panel, thereby reducing the reliability of the panel. SUMMARY

[0004] Therefore, the present application provides a display panel, a manufacturing method thereof and an electronic device, which can effectively avoid the penetration of water vapor while reducing the risk of packaging failure.

[0005] In a first aspect, an embodiment of the present application provides a display panel, comprising:

[0006] a hole, a transition area surrounding the hole, and a picture display area surrounding the transition area;

[0007] a substrate;

[0008] a display layer located on one side of the substrate, the hole penetrating at least the display layer, the display layer comprising a cathode, the cathode comprising a first cathode part located in the transition area;

[0009] a separation column located on one side of the substrate and in the transition area;

[0010] a first film layer located on the side of the separation column facing the substrate and in contact with the separation column;

[0011] The isolation column comprises an insulating isolation portion, at least part of the side wall of the insulating isolation portion is recessed to form a notch in the direction towards the inside of the insulating isolation portion, the surface of the insulating isolation portion facing away from the substrate is a first surface, and the surface of the insulating isolation portion facing the substrate and in contact with the first film layer is a second surface;

[0012] The first cathode portion extending on the first film layer is disconnected from the first cathode portion extending on the first surface at the notch.

[0013] In the embodiments of the present application, by arranging the insulating isolation portion in the isolation column, which is in contact with the first film layer and has a notch, on the one hand, the notch serves as an isolation groove, disconnecting the two parts of the first cathode portion extending on the first film layer and the first surface, so that the first cathode portion forms multiple discontinuous parts, effectively cutting off the penetration path of water vapor, and preventing water vapor in the opening from penetrating into the picture display area along the first cathode portion. On the other hand, based on the insulating property of the insulating isolation portion, the two parts of the first cathode portion extending on the first film layer and the first surface are electrically insulated from each other, and since the insulating isolation portion is in contact with the first film layer, the two parts of the first cathode portion extending on the first surface and located on the opposite sides of the insulating isolation portion are also electrically insulated from each other. In this way, the multiple discontinuous parts of the first cathode portion are electrically insulated from each other, thereby cutting off the transmission path of the current. Even if the cathode in the picture display area is electrified, the current cannot flow along the first cathode portion towards the position of the hole wall. Therefore, there is no current transmission on the metal in the transition area, and without current transmission, there is no condition for electrochemical reaction to occur. Even if the corrosive impurities migrate to the edge of the isolation column, they will not undergo electrochemical reaction under the promotion of electricity and water vapor. The deformation of the packaging layer caused by the corrosion and expansion of the metal is avoided, thereby avoiding the risk of packaging failure and improving the packaging reliability of the display panel.

[0014] In addition, in the embodiments of the present application, the notch of the isolation column is formed by the insulating isolation portion. Compared with the metal layer, the insulating layer has a larger thickness and higher stability, and is not easy to break. Therefore, the risk of notch failure in the isolation column can be effectively reduced.

[0015] In an embodiment, the insulating isolation portion is a one-piece structure, that is, the various components of the insulating isolation portion are in communication with each other and are integrally formed. In the process of the display panel, the insulating isolation portion is formed by using a patterning process only once. In this way, not only can the process flow of the insulating isolation portion be simplified, but also the stability of the one-piece structure of the insulating isolation portion is higher when the isolation column is subjected to common array processes such as high-pressure water cleaning and high-pressure air knife in subsequent processes. The phenomenon of the film layer inside the insulating isolation portion being warped or falling off does not occur, and the stability of the isolation column is improved.

[0016] Further, the insulating isolation portion is an organic insulating layer. Due to the current process capability, compared with the inorganic insulating layer, the organic insulating layer is easier to form a larger film thickness. When the insulating isolation portion is the organic insulating layer, the height of the notch in the insulating isolation portion in the direction perpendicular to the plane of the substrate can be set to be larger, which can ensure the first cathode portion to be disconnected at the notch to a greater extent. Under the premise of effectively ensuring the first cathode portion to be disconnected and electrically insulated from each other, the process difficulty of forming the cathode is reduced.

[0017] In an embodiment, the isolation column further comprises a metal isolation portion, the metal isolation portion is located in the notch, a surface of the metal isolation portion farthest from the substrate is a third surface, and the insulating isolation portion covers the third surface.

[0018] The metal isolation portion is arranged in the notch, and the notch of the insulating isolation portion can be filled with the metal isolation portion. When the isolation column is subjected to common array processes such as high-pressure water cleaning and high-pressure air knife, the insulating isolation portion is prevented from shaking greatly, and the stability of the isolation column is improved. Moreover, since the insulating isolation portion covers the third surface of the metal isolation portion, the top of the insulating isolation portion separates the metal isolation portion from the first cathode portion extending on the first surface. Even if the first cathode portion extending on the first film layer is electrically connected with the metal isolation portion, it is still electrically insulated from the first cathode portion extending on the first surface, and the transmission path of the current is ensured to be cut off.

[0019] In an embodiment, in the direction perpendicular to the plane of the substrate, the notch comprises opposite first and second sides; the metal isolation portion comprises a first metal portion and a second metal portion, the first metal portion is located at the first side of the notch, the second metal portion is located at the second side of the notch, and the first metal portion and the second metal portion have a spacing therebetween.

[0020] In the above structure, the first metal portion and the second metal portion are not filled with other structures, which can more easily ensure that the first cathode portion is discontinuous at the notch. Moreover, the first metal portion and the second metal portion are electrically insulated from each other, and no conductive path is formed between the first metal portion and the second metal portion, which further improves the reliability of the cut-off of the current transmission path.

[0021] Further, the metal isolation portion further comprises a third metal portion, the third metal portion is located between the first metal portion and the second metal portion, and the first metal portion and the second metal portion respectively protrude from the third metal portion in a direction away from the inside of the insulating isolation portion.

[0022] When the metal isolation portion includes a third metal portion between the first metal portion and the second metal portion, the metal isolation portion can more stably support the insulating isolation portion, avoiding the insulating isolation portion from shaking under external force. Moreover, the first metal portion and the second metal portion protrude from the third metal portion, which is equivalent to that the side wall of the third metal portion is inwardly retracted to form a notch. The notch can also block the first cathode portion, so that the first cathode portion is discontinuously arranged at the notch. Moreover, it should be noted that although the first metal portion and the second metal portion are electrically connected through the third metal portion, since the insulating isolation portion covers the third metal portion, the insulating isolation portion can still electrically insulate the metal isolation portion from the first cathode portion extending on the first surface, so as to electrically insulate the first cathode portion extending on the first surface from the first film layer, and ensure that the disconnected first cathode portions are electrically insulated from each other.

[0023] In an embodiment, the insulating isolation portion includes two notches arranged oppositely, and the isolation column includes two metal isolation portions, which are respectively arranged in the two notches.

[0024] The insulating isolation portion includes a first insulating portion and a second insulating portion. The first insulating portion is arranged between the two metal isolation portions. The second insulating portion covers the side wall of the first insulating portion and the surface of the first insulating portion away from the substrate. Moreover, the second insulating portion also covers the third surface of the two metal isolation portions.

[0025] In this way, the insulating isolation portion includes two film layers of the first insulating portion and the second insulating portion. The total thickness of the two insulating portions constitutes the thickness of the insulating isolation portion. The total thickness of the insulating isolation portion is more easily increased through the superposition of the thicknesses of the two insulating portions, so that the insulating isolation portion has better film layer flatness and higher stability. In addition, the second insulating portion covers not only the surface of the first insulating portion away from the substrate, but also the side wall of the first insulating portion. The contact area between the two insulating portions is larger, and the two insulating portions are less likely to be separated under external force.

[0026] Further, the first insulating portion is an organic insulating layer or an inorganic insulating layer, and the second insulating portion is an organic insulating layer or an inorganic insulating layer.

[0027] In an embodiment, the display panel further includes a barrier wall at the transition area. At least part of the isolation column is arranged on the side of the barrier wall close to the opening.

[0028] At least part of the isolation column is arranged on the side of the barrier wall close to the opening. This part of the isolation column is close to the opening, which ensures that the first cathode portions near the edge of the opening are disconnected and electrically insulated from each other, and more effectively avoids the water vapor in the opening from penetrating inward along the first cathode portions, so that the water vapor isolation performance is more excellent.

[0029] The embodiment of the present application also provides a manufacturing method of a display panel, comprising:

[0030] A substrate is provided, which comprises a preset aperture area, a transition area surrounding the preset aperture area, and a picture display area surrounding the transition area;

[0031] A first film layer is formed in the preset aperture area, the transition area, and the picture display area of the substrate;

[0032] An isolation column is formed on the first film layer, the isolation column being located in the transition area, and the isolation column comprising an insulating isolation part, at least part of the sidewall of the insulating isolation part being recessed to form a notch in a direction towards the inside of the insulating isolation part, wherein a surface of the insulating isolation part facing away from the substrate is a first surface, and a surface of the insulating isolation part in contact with the first film layer is a second surface;

[0033] A display layer is formed in the preset aperture area, the transition area, and the picture display area of the substrate, wherein the display layer comprises a cathode, the cathode comprising a first cathode part located in the transition area, and the first cathode part extending on the first film layer being disconnected from the first cathode part extending on the first surface at the notch;

[0034] The substrate, the first film layer, and the display layer are cut along the edge of the preset aperture area to form an aperture.

[0035] The display panel is formed by the above method. By arranging the insulating isolation part in contact with the first film layer and having a notch, the two parts of the first cathode part extending on the first film layer and the first surface can be disconnected by the notch, the water vapor penetration path is effectively cut off, and based on the design of the insulating isolation part, the two parts of the first cathode part extending on the first surface and located on the opposite sides of the insulating isolation part are electrically insulated from each other, the multiple discontinuous parts of the first cathode part are electrically insulated from each other, the transmission path of the current in the first cathode part is effectively cut off, the conditions for electrochemical reaction are eliminated, the metal in the transition area will not undergo electrochemical reaction promoted by corrosive impurities, and the risk of encapsulation failure caused by cracks in the deformation of the encapsulation layer is avoided.

[0036] In an embodiment, the transition area comprises a preset notch area, and after the first film layer is formed, the manufacturing method further comprises: forming a sacrificial metal part on the first film layer, the sacrificial metal part being located in the preset notch area;

[0037] The process of forming the insulating isolation portion on the first film layer, at least part of the sidewall of the insulating isolation portion is recessed to form the notch in the direction towards the inside of the insulating isolation portion includes:

[0038] The insulating isolation portion is formed on the first film layer, and the insulating isolation portion covers the sacrificial metal portion.

[0039] The sacrificial metal portion is removed, and the sidewall of the insulating isolation portion in contact with the sacrificial metal portion forms the notch.

[0040] In the manufacturing process, the notch of the insulating isolation portion is formed by the sacrificial metal portion, and the sacrificial metal portion can be formed by the same patterning process as the original metal layer in the panel, so that no additional process is needed. In addition, no additional equipment for side etching of the insulating layer is needed, which reduces the cost.

[0041] The embodiment of the application further provides an electronic device comprising the display panel.

[0042] Since the electronic device comprises the display panel, the electronic device can not only disconnect the cathode by the isolation column to cut off the penetration path of water vapor, but also can make the disconnected cathodes electrically insulated from each other to cut off the transmission path of the current, thereby avoiding the risk of packaging failure caused by the electrochemical reaction of the metal. BRIEF DESCRIPTION OF DRAWINGS

[0043] In order to more clearly illustrate the technical solutions of the embodiments of the application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or the prior art description. Obviously, the drawings in the following description are some embodiments of the application, and other drawings can also be obtained by those skilled in the art without creative labor.

[0044] Figure 1 It is a partial sectional view of the display panel in the prior art;

[0045] Figure 2 It is a structural schematic view of the metal expansion forming the protrusion in the prior art;

[0046] Figure 3 It is a top view of the display panel provided by the embodiment of the application;

[0047] Figure 4 It is Figure 3 It is a sectional view along the direction of A1-A2;

[0048] Figure 5 It is a structural schematic view of the isolation column provided by the embodiment of the application;

[0049] Figure 6Another structural schematic view of the isolation column provided in the embodiments of the present application;

[0050] Figure 7 Another structural schematic view of the isolation column provided in the embodiments of the present application;

[0051] Figure 8 For Figure 7 Process flow chart of the corresponding isolation column manufacturing method

[0052] Figure 9 Another structural schematic view of the isolation column provided in the embodiments of the present application;

[0053] Figure 10 Another structural schematic view of the isolation column provided in the embodiments of the present application;

[0054] Figure 11 For Figure 10 Process flow chart of the corresponding isolation column manufacturing method

[0055] Figure 12 Another structural schematic view of the isolation column provided in the embodiments of the present application;

[0056] Figure 13 Another structural schematic view of the isolation column provided in the embodiments of the present application;

[0057] Figure 14 For Figure 13 Process flow chart of the corresponding isolation column manufacturing method

[0058] Figure 15 Another structural schematic view of the isolation column provided in the embodiments of the present application;

[0059] Figure 16 Another structural schematic view of the isolation column provided in the embodiments of the present application;

[0060] Figure 17 For Figure 16 Process flow chart of the corresponding isolation column manufacturing method

[0061] Figure 18 Another structural schematic view of the isolation column provided in the embodiments of the present application;

[0062] Figure 19 Another structural schematic view of the isolation column provided in the embodiments of the present application; Figure 18 Process flow chart of the corresponding isolation column manufacturing method

[0063] Figure 20 Another structural schematic view of the isolation column provided in the embodiments of the present application;

[0064] Figure 21 ForFigure 20 A process flow chart of a manufacturing method of the isolation column;

[0065] Figure 22 A top view of the isolation column provided by the embodiments of the present application;

[0066] Figure 23 A top view of the isolation column provided by the embodiments of the present application; Figure 22 A sectional view along B1-B2;

[0067] Figure 24 A top view of the isolation column provided by the embodiments of the present application;

[0068] Figure 25 A top view of the isolation column provided by the embodiments of the present application; Figure 24 A sectional view along C1-C2;

[0069] Figure 26 A flow chart of the manufacturing method provided by the embodiments of the present application;

[0070] Figure 27 A structural schematic diagram of the electronic device provided by the embodiments of the present application. DETAILED DESCRIPTION

[0071] In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application.

[0072] The terms used in the embodiments of the present application are only for the purpose of describing the specific embodiments, and are not intended to limit the present application. The singular forms "a", "an" and "the" used in the embodiments of the present application and the appended claims are also intended to include the plural forms, unless the context clearly indicates otherwise.

[0073] Before the technical solutions of the present application are described, the problems existing in the prior art will be described in detail:

[0074] For a display panel adopting an in-screen punching design, the display area of the display panel includes an opening area and a picture display area, wherein the opening area is used to place optical devices such as a camera, and the edges of the opening area are cut to form an opening after each film layer of the display panel is manufactured.

[0075] Display panels comprise multiple light-emitting elements, and these elements receive the same cathode voltage. Therefore, display panels typically utilize a single, solid-surface cathode to supply the cathode voltage to the light-emitting elements. When the edges of the aperture area are cut to create the aperture, the cathode breaks off at the aperture, exposing its sidewalls to the aperture wall. This provides a path for moisture inside the aperture to penetrate into the display area, causing moisture to seep into the panel and adversely affect the components within.

[0076] Therefore, existing technologies typically involve placing isolation pillars around the opening to disconnect the cathode at the isolation pillars. Figure 1 This is a partial cross-sectional view of a display panel in the prior art, such as... Figure 1 As shown, the display panel includes an isolation pillar 101, which is a metal structure. The isolation pillar 101 includes a first metal part 102, a second metal part 103, and a third metal part 104 stacked together. By side etching the side of the second metal part 103, the first metal part 102 and the third metal part 104 protrude from the second metal part 103 to form a notch. This notch serves as an isolation groove. When the cathode 105 is subsequently formed, the cathode part 1051 extending around the first metal part 102 and the cathode part 1052 extending at the top of the third metal part 104 are separated at the notch, so that the water vapor in the opening 106 can no longer seep into the screen display area 107 along the cathode 105, thus playing the role of isolating water vapor.

[0077] However, although the isolation column 101 of the above structure can disconnect the cathode 105 and cut off the water vapor penetration path, due to the conductivity of the isolation column 101, the cathode 105 extending around the first metal part 102 will be electrically connected through the first metal part 102, thereby forming a continuous current transmission path (the current transmission path is as follows). Figure 2 (As shown by the dashed arrow). When current is applied to the cathode 105, the current will travel along the current transmission path to the wall of the opening 106. Since the encapsulation layer 109 is also broken at the opening 106, the wall of the opening is not protected by the encapsulation layer 109. There will be impurities such as external polarizers, optically clear adhesive (OCA), and environmentally introduced iodine and chlorine in the opening 106. After the impurities invade, they will promote electrochemical reactions between the metals with current flow, such as promoting electrochemical reactions between the magnesium-silver alloy used to form the cathode 105 and the titanium-aluminum alloy used to form the isolation pillar 101. After the electrochemical reaction, the metal volume expands and forms a protrusion. Figure 2 This is a schematic diagram of a structure in the prior art where metal expands to form a protrusion, such as... Figure 2As shown, the protrusion 108 generated by the metal will arch the packaging layer 109 and cause it to deform, and then cause the packaging layer 109 to crack, resulting in packaging failure of the panel, and causing the panel to have black spots and other adverse phenomena.

[0078] To solve the problems in the prior art, the display panel provided by the embodiments of the present application is designed by the structure of the isolation column in the display panel, which can not only cut off the penetration path of water vapor by the isolation column to disconnect the cathode, but also can make the disconnected cathodes be electrically insulated from each other to cut off the transmission path of the current, thereby avoiding the risk of packaging failure caused by the electrochemical reaction of the metal.

[0079] Figure 3 A top view of the display panel provided by the embodiments of the present application is shown in FIG. 1, Figure 4 A top view of the display panel provided by the embodiments of the present application is shown in FIG. 1, Figure 3 A sectional view along the A1-A2 direction is shown in FIG. 2, Figure 3 A sectional view along the A1-A2 direction is shown in FIG. 2, Figure 4 As shown, the display panel includes an opening 1, a transition area 2 surrounding the opening 1, and a picture display area 3 surrounding the transition area 2. The opening 1 is a hole in the active area (AA area) for placing optical devices such as a camera, also known as an AA hole, Figure 3 The shape and position of the opening 1 shown in FIG. 1 are only illustrative, and the embodiments of the present application do not limit the shape and position of the opening 1.

[0080] The display panel further includes: a substrate 4, which can be a rigid substrate of glass material or a flexible substrate including a flexible film such as a polyimide (PI) film; a display layer 5 located on one side of the substrate 4, the opening 1 at least penetrating the substrate 4 and the display layer 5, the display layer 5 including an anode 6, a light-emitting layer 7, and a cathode 8 stacked, the cathode 8 including a first cathode part 9 located in the transition area 2; an isolation column 10 located on one side of the substrate 4 and in the transition area 2; and a first film layer 11 located on the side of the isolation column 10 facing the substrate 4 and in contact with the isolation column 10, that is, the first film layer 11 is the film layer in the display panel closest to the isolation column 10 and in contact with the bottom of the isolation column 10.

[0081] The isolation column 10 includes an insulating isolation part 12 formed of an insulating material that does not conduct electricity, at least part of the sidewall of the insulating isolation part 12 is recessed to form a notch 13 in the direction toward the inside of the insulating isolation part 12, so that the insulating isolation part 12 forms a structure with the upper part protruding outward and the bottom part recessed inward. The surface of the insulating isolation part 12 facing away from the substrate 4 side is a first surface 14, the surface of the insulating isolation part 12 facing the substrate 4 side and in contact with the first film layer 11 is a second surface 15, and the first cathode part 9 extending on the first film layer 11 is disconnected from the first cathode part 9 extending on the first surface 14 at the notch 13.

[0082] In the embodiment of the present application, by arranging the insulating isolation part 12 in contact with the first film layer 11 and having the notch 13, on the one hand, the notch 13 serves as an isolation groove to disconnect the two parts of the first cathode part 9 extending on the first film layer 11 and the first surface 14, so that the first cathode part 9 forms a plurality of discontinuous parts, effectively cutting off the penetration path of water vapor, and avoiding the water vapor in the opening 1 from penetrating into the picture display area 3 along the first cathode part 9. On the other hand, based on the insulating property of the insulating isolation part 12, the two disconnected parts of the first cathode part 9 extending on the first film layer 11 and the first surface 14 are electrically insulated from each other, and since the insulating isolation part 12 is in contact with the first film layer 11, the two disconnected parts of the first cathode part 9 extending on the first surface 14 and located on the opposite sides of the insulating isolation part 12 are also electrically insulated from each other. In this way, the plurality of discontinuous parts formed by the first cathode part 9 are all electrically insulated from each other, thereby effectively cutting off the transmission path of the current. Even if the cathode 8 in the picture display area 3 is electrified, the current cannot flow along the first cathode part 9 towards the position of the hole wall, so there is no current transmission on the metal of the transition area 2, and no electrochemical reaction occurs under the promotion of corrosive impurities, avoiding the deformation of the packaging layer 16 caused by the expansion of the metal, and further avoiding the risk of packaging failure, thereby improving the packaging reliability of the display panel.

[0083] In addition, referring again to Figure 1 and Figure 2 , the prior art uses the first metal part 102 and the third metal part 104 to protrude outwardly from the second metal part 103 to form the notch of the isolation column 101. Since the metal layer is relatively thin, the part of the third metal part 104 protruding outwardly is prone to breakage. After the third metal part 104 breaks, the isolation column 101 no longer has the isolation groove, which may result in the continuous arrangement of the cathode part 1051 and the cathode part 1052 that should be disconnected. In the embodiment of the present application, the notch 13 of the isolation column 10 is formed by the insulating isolation part 12. Compared with the metal layer, the insulating layer has a larger thickness and thus higher stability, thereby effectively reducing the risk of failure of the notch 13 in the isolation column 10.

[0084] In a feasible implementation manner, Figure 5 a structural schematic diagram of the isolation column provided in the embodiment of the present application is shown in Figure 5 , the insulating isolation part 12 includes a first part 17 and a second part 18, wherein the first part 17 and the second part 18 are two film layers independent of each other, the second part 18 is located on the side of the first part 17 away from the substrate 4, and the second part 18 only covers the surface of the side of the first part 17 away from the substrate 4, and the first part 17 is formed into the notch 13 by a side etching process.

[0085] However, in this structure, the first part 17 and the second part 18 are independent of each other, and the contact area between the second part 18 and the first part 17 is small. If the isolation column is subjected to common array processes such as high-pressure water cleaning and high-pressure air knife in subsequent processes, the second part 18 is prone to detaching from the first part 17. Moreover, in the process of manufacturing the insulating isolation part 12 in this structure, after forming the second part 18, the first part 17 needs to be side-etched to form a notch 13. Therefore, additional equipment capable of side-etching the insulating layer needs to be purchased, resulting in a large process cost. In addition, if the first part 17 is an inorganic insulating layer, the inorganic insulating layer is relatively thin, so the height of the notch 13 formed after side etching is small. When forming the cathode 8 later, to ensure that the cathode 8 can break at the notch 13, it is necessary to control the process with high precision and stability, resulting in a large process difficulty.

[0086] Therefore, in one embodiment of this application... Figure 6 This is another structural schematic diagram of the isolation column provided in the embodiments of this application, as shown below. Figure 6 As shown, the insulating isolation part 12 is a one-piece structure, meaning that all components of the insulating isolation part 12 are interconnected and integrally formed. In the display panel manufacturing process, the insulating isolation part 12 is formed using only one patterning process. This not only simplifies the manufacturing process of the insulating isolation part 12, but also enhances the stability of the one-piece insulating isolation part 12 when subjected to array processes such as high-pressure water cleaning and high-pressure air knife treatments. It prevents the internal film layer of the insulating isolation part 12 from warping or breaking off, thus improving the stability of the isolation post 10.

[0087] Furthermore, the insulating isolation portion 12 is an organic insulating layer, that is, the insulating isolation portion 12 is formed of an organic insulating material.

[0088] Due to the limitations of current process capabilities, organic insulating layers are easier to form with a larger film thickness compared to inorganic insulating layers. When the insulating isolation part 12 is an organic insulating layer, the height of the notch 13 in the insulating isolation part 12 in the plane direction perpendicular to the substrate 4 can be set to be larger. When the cathode 8 is formed later, it is easier to ensure that the first cathode part 9 is disconnected at the notch 13. Under the premise of effectively ensuring that the first cathode part 9 is disconnected and electrically insulated from each other, the process difficulty of the cathode 8 is reduced.

[0089] also, Figure 7 This is a schematic diagram of a film layer structure of a display panel provided in an embodiment of this application, as shown below. Figure 7As shown, the display panel also includes: a buffer layer 20 located on one side of the substrate 4, which serves to maintain heat during the subsequent excimer laser annealing process for forming the semiconductor layer 21; a semiconductor layer 21 located on the side of the buffer layer 20 facing away from the substrate 4, which forms the active layer a1 of the transistor device, specifically a polysilicon layer; and a first insulating layer 22 located on the side of the semiconductor layer 21 facing away from the substrate 4, the first insulating layer 22 being a gate insulating (GI) layer made of an inorganic insulating material such as SiO2. x Material formation: A first metal layer 23 located on the side of the first insulating layer 22 facing away from the substrate 4, used to form the gate g of the transistor device and the first electrode Cst1 of the capacitor, is formed of molybdenum; a second insulating layer 24 located on the side of the first metal layer 23 facing away from the substrate 4, the second insulating layer 24 is also a gate insulating layer, and is formed of an inorganic insulating material such as SiN. x Material formation: A second metal layer 25, located on the side of the second gate insulating layer facing away from the substrate 4, is used to form the second electrode Cst2 of the capacitor and is formed of molybdenum metal; a third insulating layer 26, located on the side of the second metal layer 25 facing away from the substrate 4, is an interlayer dielectric (ILD) layer and is formed of inorganic materials such as SiN. x Material formation: A third metal layer 27, located on the side of the third insulating layer 26 facing away from the substrate 4, is used to form the first electrode s and the second electrode d of the transistor device. The third metal layer 27 is a metal composite film layer, including a stacked first sub-metal layer 28, a second sub-metal layer 29, and a third sub-metal layer 30. In one feasible embodiment, the first sub-metal layer 28 and the third sub-metal layer 30 are formed of titanium, and the second sub-metal layer 29 is formed of aluminum. That is, the third metal layer 27 is a titanium / aluminum / titanium three-layer composite structure. A fourth insulating layer 31, also an interlayer dielectric layer, is located on the side of the third metal layer 27 facing away from the substrate 4. The fourth insulating layer 31 is also an interlayer dielectric layer, made of an inorganic material such as SiO2. x Material formation; a planarization (PLN) layer 32 located on the side of the fourth insulating layer 31 facing away from the substrate 4, used to achieve film planarization, is formed of an organic material.

[0090] Furthermore, the anode 6 is located on the side of the planarization layer 32 facing away from the substrate 4; the display layer 5 also includes a pixel definition layer 33 for forming an opening to accommodate the light-emitting layer 7, thereby defining the light-emitting area of ​​the display panel; the light-emitting layer 7 is located within the opening of the pixel definition layer 33; the cathode 8 is located on the side of the pixel definition layer 33 and the light-emitting layer 7 facing away from the substrate 4. In addition, the display panel also includes an encapsulation layer 16 located on the side of the cathode 8 facing away from the substrate 4, for encapsulating the display panel.

[0091] It should be noted that you should refer to [the website / platform] again. Figure 7 A base 34 for elevating the isolation pillar 10 can also be provided between the isolation pillar 10 and the substrate 4. The base 34 can be formed by etching one or more of the first insulating layer 22, the first metal layer 23, the second insulating layer 24, the second metal layer 25, and the third insulating layer 26. For example, see... Figure 7 The base 34 is formed by etching the first insulating layer 22 and the second insulating layer 24, or, see... Figure 10 The base 34 is formed by etching the first insulating layer 22, the first metal layer 23, the second insulating layer 24, the second metal layer 25 and the third insulating layer 26.

[0092] When the insulating isolation portion 12 is an organic insulating layer, the insulating isolation portion 12 can be formed using the planarization layer 32. The following is in conjunction with... Figure 8 ,right Figure 7 The manufacturing method of the isolation column 10 shown is explained below:

[0093] Step H1: A buffer layer 20, a semiconductor layer 21, a first insulating layer 22, a first metal layer 23, and a second insulating layer 24 are sequentially formed on the substrate 4, wherein the first insulating layer 22 and the second insulating layer 24 are etched to form a base 34 in the transition region 2.

[0094] Step H2: Form a second metal layer 25, and use the second metal layer 25 to form a sacrificial metal portion 35 located in the transition region 2. The process of forming the sacrificial metal portion 35 using the second metal layer 25 includes: after forming the second metal layer 25, placing a photoresist 36 at the location where metal needs to be retained, etching away the metal outside the photoresist 36 through an exposure, development, and etching process, and then removing the photoresist 36, thereby forming the sacrificial metal portion 35 in the transition region 2.

[0095] Step H3: The third insulating layer 26, the third metal layer 27 and the fourth insulating layer 31 are formed sequentially, wherein the third insulating layer 26 and the fourth insulating layer 31 on the base 34 are etched away to expose the sacrificial metal part 35.

[0096] Step H4: Form a planarization layer 32. Etch the planarization layer 32 in the transition region 2 to form an insulating isolation portion 12 on the base 34. The insulating isolation portion 12 fills the area between the sacrificial metal portions 35 and covers the top of the sacrificial metal portions 35.

[0097] Step H5: Use etching liquid to side-etch the sacrificial metal portion 35 to remove all of the sacrificial metal portion 35, thereby forming a notch 13 on the sidewall of the insulating isolation portion 12 that contacts the sacrificial metal portion 35.

[0098] It should be noted that in the above structure, see [reference needed].Figure 7 and Figure 8 The second insulating layer 24 is located on the side of the insulating isolation portion 12 facing the substrate 4 and is in contact with the insulating isolation portion 12. Therefore, the first film layer 11 in the above structure is the second insulating layer 24.

[0099] Compared to Figure 6 The manufacturing process of the insulating isolation portion 12 shown above involves forming the notch 13 of the insulating isolation portion 12 using a sacrificial metal portion 35. The sacrificial metal portion 35 can be formed using the same patterning process as the existing metal layer within the panel, thus eliminating the need for additional processing steps. Furthermore, it eliminates the need for additional equipment for side etching of the insulating layer, reducing costs.

[0100] In one implementation, Figure 9 This is another structural schematic diagram of the isolation column provided in the embodiments of this application, as shown below. Figure 9 As shown, the isolation pillar 10 also includes a metal isolation portion 36, which is located in the recess 13. The surface of the metal isolation portion 36 facing away from the substrate 4 and being furthest from the substrate 4 is the third surface 37, and the insulating isolation portion 12 covers the third surface 37.

[0101] A metal isolation portion 36 is provided within the recess 13. This metal isolation portion 36 can fill the recess 13 of the insulating isolation portion 12. When the isolation pillar 10 is subjected to array processes such as high-pressure water cleaning and high-pressure air knife in subsequent processes, the insulating isolation portion 12 is prevented from shaking significantly, thus improving the stability of the isolation pillar 10. Moreover, since the insulating isolation portion 12 covers the third surface 37 of the metal isolation portion 36, the top of the insulating isolation portion 12 will separate the metal isolation portion 36 from the first cathode portion 9 extending on the first surface 14. Even if the first cathode portion 9 extending on the first film layer 11 is electrically connected to the metal isolation portion 36, it can still be electrically insulated from the first cathode portion 9 extending on the first surface 14, effectively ensuring that the current transmission path is cut off.

[0102] In one implementation, please refer again. Figure 9 In the direction perpendicular to the plane of the substrate 4, the notch 13 includes a first side and a second side. The metal isolation portion 36 includes a first metal portion 38 and a second metal portion 39, the first metal portion 38 being located on the first side of the notch 13 and the second metal portion 39 being located on the second side of the notch 13, with a gap between the first metal portion 38 and the second metal portion 39.

[0103] In the above structure, no other structure is filled between the first metal part 38 and the second metal part 39, which makes it easier to ensure that the first cathode part 9 is discontinuously arranged at the notch 13. Moreover, there is a gap between the first metal part 38 and the second metal part 39, and they are electrically insulated from each other. No conductive path will be formed between the first metal part 38 and the second metal part 39, which further improves the reliability of the current transmission path being cut off.

[0104] When the metal isolation portion 36 includes a first metal portion 38 and a second metal portion 39 Figure 10 This is a schematic diagram of another film layer structure of the display panel provided in the embodiments of this application, as shown below. Figure 10 As shown, the first metal portion 38 can be formed using the first sub-metal layer 28 in the third metal layer 27, and the second metal portion 39 can be formed using the third sub-metal layer 30 in the third metal layer 27. The following is in conjunction with... Figure 11 ,right Figure 10 The manufacturing process of the isolation column 10 shown is explained below:

[0105] Step K1: A buffer layer 20, a semiconductor layer 21, a first insulating layer 22, a first metal layer 23, a second insulating layer 24, a second metal layer 25, and a third insulating layer 26 are sequentially formed on the substrate 4. The first insulating layer 22, the first metal layer 23, the second insulating layer 24, the second metal layer 25, and the third insulating layer 26 are etched to form a base 34 in the transition region 2.

[0106] Step K2: Form a first sub-metal layer 28, a second sub-metal layer 29, and a third sub-metal layer 30. The first sub-metal layer 28 forms a first metal portion 38 within the transition region 2, the third sub-metal layer 30 forms a second metal portion 39 within the transition region 2, and the second sub-metal layer 29 forms a third metal portion 40 within the transition region 2. The process of forming the first metal portion 38 using the first sub-metal layer 28, the second metal portion 39 using the third sub-metal layer 30, and the third metal portion 40 using the second sub-metal layer 29 includes: after forming the first sub-metal layer 28, the second sub-metal layer 29, and the third sub-metal layer 30, a photoresist 36 is placed at the location where the metal layer needs to be retained. The metal outside the photoresist 36 is etched away using an exposure, development, and etching process. Then, the photoresist 36 is removed to form the first metal portion 38, the second metal portion 39, and the third metal portion 40 in the transition region 2.

[0107] Step K3: Form a fourth insulating layer 31 and etch away the fourth insulating layer 31 on the base 34 to expose the first metal part 38, the second metal part 39 and the third metal part 40.

[0108] Step K4: Form a planarization layer 32 and etch the planarization layer 32 in the transition region 2 to form an insulating isolation portion 12 on the substrate 34.

[0109] Step K5: Perform side etching on the third metal part 40 to remove all of the third metal part 40.

[0110] It should be noted that, see Figure 10 and Figure 11 In the above structure, the third insulating layer 26 is located on the side of the insulating isolation portion 12 facing the substrate 4 and is in contact with the insulating isolation portion 12. Therefore, the first film layer 11 in the above structure is the third insulating layer 26.

[0111] In one implementation, Figure 12 This is another structural schematic diagram of the isolation column provided in the embodiments of this application, as shown below. Figure 12 As shown, the metal isolation portion 36 also includes a third metal portion 40, which is located between the first metal portion 38 and the second metal portion 39. The first metal portion 38 and the second metal portion 39 protrude from the third metal portion 40 in a direction away from the interior of the insulating isolation portion 12.

[0112] When the metal isolation portion 36 includes a third metal portion 40 located between the first metal portion 38 and the second metal portion 39, the metal isolation portion 36 can provide more stable support for the insulating isolation portion 12, preventing the insulating isolation portion 12 from shaking under external force. Furthermore, the first metal portion 38 and the second metal portion 39 protrude from the third metal portion 40, which is equivalent to the sidewall of the third metal portion 40 contracting inward to form a gap. This gap can also block the first cathode portion 9, making the first cathode portion 9 discontinuous at the gap. Moreover, it should be noted that although the first metal portion 38 and the second metal portion 39 are electrically connected through the third metal portion 40, since the insulating isolation portion 12 covers the third metal portion 40, the insulating isolation portion 12 can still electrically insulate the metal isolation portion 36 from the first cathode portion 9 extending on the first surface 14, thereby electrically insulating the first cathode portion 9 extending on the first film layer 11 and the first surface 14, ensuring that the disconnected parts of the first cathode portion 9 are electrically insulated from each other.

[0113] When the metal isolation section 36 also includes a third metal section 40 Figure 13 This is a schematic diagram of another film layer structure of the display panel provided in the embodiments of this application, as shown below. Figure 13 As shown, the third metal part 40 can be formed using the second sub-metal layer 29. The following is in conjunction with... Figure 14 ,right Figure 13 The manufacturing process of the isolation column 10 shown is explained below:

[0114] The process of steps W1 to W4 and Figure 11 The process of steps K1 to K4 is the same, and will not be repeated here.

[0115] Step W5: Perform side etching on the third metal part 40 to remove part of the third metal part 40, so that the first metal part 38 and the second metal part 39 protrude from the third metal part 40 in a direction away from the interior of the insulating isolation part 12.

[0116] It should be noted that in this embodiment, the first metal portion 38 is formed using the first sub-metal layer 28, the second metal portion 39 is formed using the third sub-metal layer 30, and the third metal portion 40 is formed using the second sub-metal layer 29. That is, the metal isolation portion 36 is also a titanium / aluminum / titanium three-layer composite structure. In this case, there is no need to make significant adjustments to the original process flow of the panel. Only the pattern design of the mask needs to be adjusted to change the pattern formed after etching the first sub-metal layer 28, the second sub-metal layer 29, and the third sub-metal layer 30. Then, the second sub-metal layer 29 used to form the third metal portion 40 can be etched a second time. The process flow is simple, and the metal isolation portion 36 does not need to occupy additional film layer space.

[0117] In one implementation, Figure 15 This is another structural schematic diagram of the isolation column provided in the embodiments of this application, as shown below. Figure 15 As shown, the insulating isolation portion 12 includes two opposing recesses 13, and the isolation pillar 10 includes two metal isolation portions 36, which are respectively located within the two recesses 13. Based on this, the insulating isolation portion 12 includes a first insulating portion 41 and a second insulating portion 42. The first insulating portion 41 is located between the two metal isolation portions 36, and the second insulating portion 42 covers the sidewall of the first insulating portion 41 and the surface of the first insulating portion 41 facing away from the substrate 4. Furthermore, the second insulating portion 42 also covers the third surface 37 of the two metal isolation portions 36.

[0118] With this configuration, the insulating isolation portion 12 includes two film layers: a first insulating portion 41 and a second insulating portion 42. The total thickness of the two insulating portions constitutes the thickness of the insulating isolation portion 12. By superimposing the thicknesses of the two insulating portions, it is easier to increase the total thickness of the insulating isolation portion 12, thereby giving it better film layer flatness and higher stability. In addition, the second insulating portion 42 covers not only the surface of the first insulating portion 41 facing away from the substrate 4, but also the sidewall of the first insulating portion 41. The contact area between the two insulating portions is larger, making them less likely to separate under external force.

[0119] Furthermore, the first insulating part 41 is an organic insulating layer or an inorganic insulating layer, and the second insulating part 42 is an organic insulating layer or an inorganic insulating layer.

[0120] The first insulating part 41 and the second insulating part 42 will be described below using three structures as examples.

[0121] First structure:

[0122] The first insulating part 41 is an organic insulating layer, and the second insulating part 42 is an inorganic insulating layer. Figure 16 This is a schematic diagram of another film layer structure of the display panel provided in an embodiment of this application. Figure 17 for Figure 16 The process flow diagram for the corresponding isolation column manufacturing method is shown below. Figure 16 and Figure 17 The manufacturing process of the isolation column 10 is explained below:

[0123] Step Q1: A buffer layer 20, a semiconductor layer 21, a first insulating layer 22, a first metal layer 23, a second insulating layer 24, a second metal layer 25, and a third insulating layer 26 are sequentially formed on the substrate 4. The first insulating layer 22, the first metal layer 23, the second insulating layer 24, the second metal layer 25, and the third insulating layer 26 are etched to form a base 34 in the transition region 2.

[0124] Step Q2: Form a first insulating part 41 on the base 34.

[0125] Step Q3: Form a first sub-metal layer 28, a second sub-metal layer 29, and a third sub-metal layer 30. The first metal portion 38 is formed in the transition region 2 using the first sub-metal layer 28. The third metal portion 40 is formed in the transition region 2 using the second sub-metal layer 29. The second metal portion 39 is formed in the transition region 2 using the third sub-metal layer 30. Specific forming processes are described in [details omitted]. Figure 11 and Figure 14 The explanation is provided in the text and will not be repeated here.

[0126] Step Q4: Form a fourth insulating layer 31, and use the fourth insulating layer 31 to form a second insulating portion 42 in the transition region 2.

[0127] Step Q5: Perform side etching on the third metal part 40 to remove all or part of the third metal part 40.

[0128] It should be noted that the display panel may include two third metal layers 27, both located between the third insulating layer 26 and the fourth insulating layer 31. One third metal layer 27 forms the first electrode s and the second electrode d of a transistor device, as well as a data line providing data signals to the transistor device and a first power signal line providing power signals to the transistor device. The other third metal layer 27 forms a second power signal line providing power signals to the transistor device. The first and second power signal lines intersect to form a mesh structure and are electrically connected to reduce the overall load on the power signal lines and minimize power signal attenuation during transmission. A fifth insulating layer is present between the two third metal layers 27, and the first insulating portion 41 formed in step Q2 can be formed using this fifth insulating layer.

[0129] In the above structure, the first insulating part 41 and the second insulating part 42 can be formed with the original film layer in the display panel using the same patterning process, which simplifies the process flow and does not occupy additional film layer thickness, making it easier to achieve a thinner and lighter display panel design.

[0130] The second structure:

[0131] The first insulating part 41 is an organic insulating layer, and the second insulating part 42 is an organic insulating layer. Figure 18 This is a schematic diagram of another film layer structure of the display panel provided in an embodiment of this application. Figure 19 for Figure 18 The process flow diagram for the corresponding isolation column manufacturing method is shown below. Figure 18 and Figure 19 The manufacturing process of the isolation column 10 is explained below:

[0132] Step P1: A buffer layer 20, a semiconductor layer 21, a first insulating layer 22, a first metal layer 23, a second insulating layer 24, a second metal layer 25, and a third insulating layer 26 are sequentially formed on the substrate 4. The first insulating layer 22, the first metal layer 23, the second insulating layer 24, the second metal layer 25, and the third insulating layer 26 are etched to form a base 34 in the transition region 2.

[0133] Step P2: A first insulating portion 41 is formed on the base 34. Similar to the embodiment described above, the first insulating portion 41 can be formed using a fifth insulating layer, which will not be elaborated further here.

[0134] Step P3: Form a first sub-metal layer 28, a second sub-metal layer 29, and a third sub-metal layer 30. The first metal portion 38 is formed in the transition region 2 using the first sub-metal layer 28. The third metal portion 40 is formed in the transition region 2 using the second sub-metal layer 29. The second metal portion 39 is formed in the transition region 2 using the third sub-metal layer 30. Specific forming processes are described in [details omitted]. Figure 11 and Figure 14 The explanation is provided in the text and will not be repeated here.

[0135] Step P4: Form the fourth insulating layer 31 and etch away the fourth insulating layer 31 on the base 34 to expose the first metal part 38, the second metal part 39, the third metal part 40 and the first insulating part 41.

[0136] Step P5: Form a planarization layer 32. The planarization layer 32 in the transition region 2 is etched to form the second insulating portion 42.

[0137] Step P6: Perform side etching on the third metal part 40 to remove all or part of the third metal part 40.

[0138] In the above structure, both the first insulating portion 41 and the second insulating portion 42 can be formed using the same patterning process as the original film layer in the display panel. This simplifies the process flow and avoids additional film layer thickness, making it easier to achieve a thinner display panel design. Furthermore, since organic insulating layers are easier to thicken, when both the first insulating portion 41 and the second insulating portion 42 are organic insulating layers, the total thickness of the insulating isolation portion 12 is greater, resulting in better flatness. Moreover, the second insulating portion 42 allows for a larger gap between the first cathode portion 9 extending on the first surface 14 and the metal isolation portion 36, further preventing electrical connection between them. In addition, a thicker second insulating portion 42 provides better reinforcement, offering greater protection for the second metal layer 25 and preventing it from being washed away by water in subsequent processes.

[0139] The third structure:

[0140] The first insulating part 41 is an inorganic insulating layer, and the second insulating part 42 is an organic insulating layer. Figure 20 This is a schematic diagram of another film layer structure of the display panel provided in an embodiment of this application. Figure 21 for Figure 20 The process flow diagram for the corresponding isolation column manufacturing method is shown below. Figure 20 and Figure 21 The manufacturing process of the isolation column 10 is explained below:

[0141] Step E1: A buffer layer 20, a semiconductor layer 21, a first insulating layer 22, a first metal layer 23, a second insulating layer 24, and a second metal layer 25 are sequentially formed on the substrate 4, wherein the first insulating layer 22 and the second insulating layer 24 are etched to form a base 34 in the transition region 2.

[0142] Step E2: Form a third insulating layer 26. Etch the third insulating layer 26 in the transition region 2 to form a first insulating part 41 using the third insulating layer 26.

[0143] Step E3: Form a first sub-metal layer 28, a second sub-metal layer 29, and a third sub-metal layer 30. The first metal portion 38 is formed in the transition region 2 using the first sub-metal layer 28. The third metal portion 40 is formed in the transition region 2 using the second sub-metal layer 29. The second metal portion 39 is formed in the transition region 2 using the third sub-metal layer 30. Specific forming processes are described in [details omitted]. Figure 11 and Figure 14 The explanation is provided in the text and will not be repeated here.

[0144] Step E4: Form a fourth insulating layer 31 by etching away the fourth insulating layer 31 on the base 34 to expose the first metal portion 38, the second metal portion 39, the third metal portion 40 and the first insulating portion 41.

[0145] Step E5: Form a planarization layer 32, etch the planarization layer 32 in the transition region 2, and use the planarization layer 32 to form the second insulating part 42.

[0146] Step E6: Perform side etching on the third metal part 40 to remove all or part of the third metal part 40.

[0147] In the above structure, the first insulating part 41 and the second insulating part 42 can be formed with the original film layer in the display panel using the same patterning process, which simplifies the process flow and does not occupy additional film layer thickness, making it easier to achieve a thinner and lighter display panel design.

[0148] In one implementation, Figure 22 This is a top view of the isolation column provided in an embodiment of this application. Figure 23 for Figure 22 A sectional view along B1-B2, as shown below. Figure 22 and Figure 23 As shown, the display panel also includes a barrier (Dam) 43 located in the transition zone 2, with at least a portion of the isolation pillar 10 located on the side of the barrier 43 near the opening 1.

[0149] It should be noted that the encapsulation layer 16 of the display panel includes a first inorganic encapsulation layer 44, an organic encapsulation layer 45, and a second inorganic encapsulation layer 46. The first inorganic encapsulation layer 44 and the second inorganic encapsulation layer 46 extend from the display area 3 to the edge of the opening 1. The organic encapsulation layer 45 extends from the display area 3 to the position closest to the barrier 43, where it is cut off by the barrier 43. The barrier 43 can be formed by stacking at least two of the planarization layer 32, the pixel definition layer 33, and the organic support layer 47. Specifically, the barrier 43 may include a first barrier 48 and a second barrier 49. The first barrier 48 is located on the side of the second barrier 49 closest to the opening 1, and the height of the first barrier 48 in the plane perpendicular to the substrate 4 is greater than the height of the second barrier 49 in the plane perpendicular to the substrate 4, so that the first barrier 48 can further cut off the organic encapsulation layer 45. For example, please refer again to... Figure 23 The first barrier 48 is formed by stacking a planarization layer 32, a pixel definition layer 33 and an organic support layer 47, and the second barrier 49 is formed by stacking a planarization layer 32 and a pixel definition layer 33.

[0150] When at least part of the isolation column 10 is located on the side of the retaining wall 43 near the opening 1, the isolation column 10 is closer to the opening 1. The isolation column 10 can disconnect and electrically insulate the first cathode part 9 closer to the opening 1 from each other, thus preventing water vapor in the opening 1 from penetrating inward along the first cathode part 9 to a greater extent, resulting in better water vapor isolation performance.

[0151] also, Figure 24This is another top view of the isolation column provided in an embodiment of this application. Figure 25 for Figure 24 A sectional view along C1-C2, as shown below. Figure 24 and Figure 25 As shown, in order to further cut off the transmission path of water vapor and current, part of the isolation column 10 is located on the side of the retaining wall 43 far away from the hole 1, and / or, part of the isolation column 10 is located between the first retaining wall 48 and the second retaining wall 49.

[0152] It should be noted that you should refer to [the website / platform] again. Figure 22 and Figure 24 In this embodiment of the application, in order to completely cut off the water vapor permeation path and the current transmission path, the isolation column 10 can be set around the edge of the opening 1.

[0153] This application also provides a method for manufacturing a display panel, which is used to manufacture the aforementioned display panel. (In conjunction with...) Figure 1 , Figure 26 A flowchart illustrating a manufacturing method provided in an embodiment of this application, such as... Figure 26 As shown, the manufacturing method includes:

[0154] Step S1: Provide a substrate 4, which includes a preset opening area, a transition area 2 surrounding the preset opening area, and a display area 3 surrounding the transition area 2.

[0155] Step S2: A first film layer 11 is formed in the preset opening area, transition area 2 and display area 3 of the substrate 4.

[0156] Step S3: An isolation pillar 10 is formed on the first film layer 11. The isolation pillar 10 is located in the transition region 2. The isolation pillar 10 includes an insulating isolation portion 12. At least a portion of the sidewall of the insulating isolation portion 12 is recessed in the direction toward the interior of the insulating isolation portion 12 to form a notch 13. The surface of the insulating isolation portion 12 facing away from the substrate 4 is the first surface 14, and the surface of the insulating isolation portion 12 that contacts the first film layer 11 is the second surface 15.

[0157] Step S4: A display layer 5 is formed in the preset opening area, transition area 2 and display area 3 of the substrate 4. The display layer 5 includes a cathode 8, which includes a first cathode portion 9 located in the transition area 2. The first cathode portion 9 extending on the first film layer 11 and the first cathode portion 9 extending on the first surface 14 are disconnected at the notch 13.

[0158] Step S5: Cut the substrate 4, the first film layer 11 and the display layer 5 along the edge of the preset opening area to form the opening 1.

[0159] By forming the display panel using the above method, by providing an insulating isolation portion 12 with a notch 13 in the isolation pillar 10 that contacts the first film layer 11, not only can the two parts of the first cathode portion 9 extending on the first film layer 11 and the first surface 14 be disconnected using the notch 13, effectively cutting off the water vapor permeation path, but also, based on the design of the insulating isolation portion 12, the two parts of the first cathode portion 9 extending on the first surface 14 and located on opposite sides of the insulating isolation portion 12 can be electrically insulated from each other, thereby making the multiple discontinuous parts of the first cathode portion 9 electrically insulated from each other, effectively cutting off the current transmission path in the first cathode portion 9, eliminating the conditions for electrochemical reaction, and the metal in the transition region 2 will not undergo electrochemical reaction under the promotion of corrosive impurities, avoiding the risk of encapsulation failure caused by cracks due to deformation of the encapsulation layer.

[0160] In one embodiment, the transition region 2 includes a preset recessed area, which is the area where the recess 13 is formed.

[0161] Combination Figure 7 and Figure 8 After forming the first film layer 11, the manufacturing method further includes forming a sacrificial metal portion 35 on the first film layer 11, wherein the sacrificial metal portion 35 is located in a predetermined recessed area.

[0162] The process of forming an insulating isolation portion 12 on the first film layer 11, wherein at least a portion of the sidewall of the insulating isolation portion 12 is recessed in the direction toward the interior of the insulating isolation portion 12 to form a notch 13 includes: forming an insulating isolation portion 12 on the first film layer 11, wherein the insulating isolation portion 12 covers the sacrificial metal portion 35; removing the sacrificial metal portion 35, thereby forming a notch 13 on the sidewall of the insulating isolation portion 12 that contacts the sacrificial metal portion 35.

[0163] The specific process has been implemented. Figure 8 The corresponding embodiments are described in detail, and will not be repeated here.

[0164] In conjunction with the above embodiments, Figure 8 The description states that the insulating isolation portion 12 is fabricated using this process. The notch 13 of the insulating isolation portion 12 is formed using a sacrificial metal portion 35. The sacrificial metal portion 35 can be formed using the same patterning process as the original metal layer in the panel, thus eliminating the need for additional processing steps. Furthermore, this fabrication method also eliminates the need for additional equipment for side etching of the insulating layer, reducing process costs.

[0165] This application also provides an electronic device. Figure 27 This is a schematic diagram of the structure of the electronic device provided in the embodiments of this application, such as... Figure 27 As shown, the electronic device includes the aforementioned display panel 100. The specific structure of the display panel 100 has been described in detail in the above embodiments and will not be repeated here. Of course,Figure 27 The electronic device shown is for illustrative purposes only. It can be any electronic device with a display function, such as a smartwatch, mobile phone, tablet, or game console.

[0166] In addition, it should be noted that, in addition to the aforementioned display panel 100, the electronic device may also include a cover glass (CG), optically clear adhesive (OCA), a polarizer (POL), a back support film (Ufilm), a heat dissipation film, and other structures. These structures are the same as those in the prior art and will not be described in detail here.

[0167] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of protection of this application.

[0168] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A display panel, characterized in that, include: An opening, a transition area surrounding the opening, and a screen display area surrounding the transition area; Substrate; An isolation pillar is located on one side of the substrate and in the transition region; First cathode; The isolation column includes an insulating isolation part, a first metal isolation part, and a second metal isolation part; The first cathode includes a first portion located on the side of the insulating isolation portion away from the substrate, and a second portion located between the isolation pillar and the display area; The insulating isolation portion includes a first recess and a second recess disposed opposite to each other. The first recess is located on the side of the insulating isolation portion closer to the screen display area, and the second recess is located on the side of the insulating isolation portion away from the screen display area. The first portion of the first cathode and the second portion of the first cathode are discontinuous; The first metal isolation portion is located in the first recess, the second metal isolation portion is located in the second recess, and the insulating isolation portion is provided between the first metal isolation portion and the second metal isolation portion.

2. The display panel according to claim 1, characterized in that, The first metal isolation portion includes a first metal portion and a second metal portion. The first metal portion is located on a first side of the first notch near the substrate, and the second metal portion is located on a second side opposite to the first side of the first notch near the substrate.

3. The display panel according to claim 2, characterized in that, The first metal insulating portion further includes a third metal portion located between the first metal portion and the second metal portion, wherein the first metal portion protrudes from the third metal portion in a direction away from the interior of the insulating insulating portion.

4. The display panel according to claim 3, characterized in that, The second metal portion protrudes from the third metal portion in a direction away from the interior of the insulating isolation portion.

5. The display panel according to any one of claims 1-4, characterized in that, At least a portion of the sidewall of the insulating isolation portion is recessed in a direction toward the interior of the insulating isolation portion to form the first notch and / or the second notch.

6. The display panel according to any one of claims 1-4, characterized in that, The surface of the first metal isolation portion facing away from the substrate and being furthest from the substrate is the third surface, and the insulating isolation portion covers the third surface.

7. The display panel according to any one of claims 3-4, characterized in that, The first metal part is titanium, and / or the third metal part is aluminum, and / or the second metal part is titanium.

8. The display panel according to any one of claims 1-4, characterized in that, The first portion of the first cathode is disconnected from the first metal isolation portion.

9. The display panel according to any one of claims 1-4, characterized in that, The display panel also includes a base, which is located between the isolation pillar and the substrate.

10. The display panel according to claim 9, characterized in that, The base includes a metal layer that is on the same layer and made of the same material as a first electrode plate Cst1 for forming a gate and capacitor of a transistor device, or the metal layer that is on the same layer and made of the same material as a second electrode plate Cst2 for forming a capacitor.

11. The display panel according to claim 9, characterized in that, The base includes an insulating layer, which is a gate insulating layer formed of inorganic insulating material SiOx or SiNx; or the insulating layer is an interlayer dielectric layer formed of inorganic material SiNx.

12. The display panel according to any one of claims 1-4, characterized in that, The insulating isolation part is an integral structure.

13. The display panel according to any one of claims 1-4, characterized in that, The insulating layer includes an organic insulating layer.

14. The display panel according to any one of claims 1-4, characterized in that, The insulating isolation portion includes a first insulating portion and a second insulating portion, wherein the second insulating portion covers the sidewall of the first insulating portion and the surface of the first insulating portion facing away from the substrate.

15. The display panel according to claim 14, characterized in that, The first insulating part includes an organic insulating layer or an inorganic insulating layer, and / or the second insulating part includes an organic insulating layer or an inorganic insulating layer.

16. The display panel according to any one of claims 1-4, characterized in that, The display panel also includes a retaining wall located in the transition zone, and the isolation column is located on the side of the retaining wall near the opening.

17. The display panel according to any one of claims 1-4, characterized in that, The insulating isolation portion separates the first metal isolation portion from the first portion of the first cathode.

18. The display panel according to any one of claims 1-4, characterized in that, The upper part of the insulating isolation part protrudes outward, and the bottom part is concave inward.

19. A display screen, characterized in that, Includes a cover plate and a display panel as described in any one of claims 1-18.

20. An electronic device, characterized in that, It includes a cover plate, a polarizer, and a display panel as described in any one of claims 1-18.

Images