Trench capacitor electrode structure and trench capacitor

Abstract

This invention discloses a trench capacitor electrode structure and a trench capacitor. By using a high-density array of basic units with multiple rotational symmetries to form a basic unit array, combined with the arrangement design of interconnect regions for metal interconnection in subsequent processes, the capacitance density is significantly increased, while the electrode surface area is effectively increased and the electric field distribution is optimized, thereby improving the high-frequency characteristics of the device, significantly enhancing the electrical performance of the device, and improving the structural stability of the device.

Description

Technical Field

[0001] This invention belongs to the field of capacitor structure technology, and in particular relates to a trench capacitor electrode structure and a trench capacitor. Background Technology

[0002] In the field of silicon-based micro / nano manufacturing technology, deep trench capacitors, as key components of three-dimensional integrated devices, have consistently received high attention from academia and industry in their process development. With the continued advancement of electronic device miniaturization, the demand for capacitance density in deep trench capacitors is also constantly increasing.

[0003] Current technological advancements mainly revolve around two core dimensions. The first is to achieve vertical extension of trench structures through high aspect ratio etching processes; the second is to construct the horizontal layout of high-density trench arrays using advanced photolithography technology.

[0004] However, existing deep trench capacitor designs, in order to improve capacitance density, generally only consider the high density of the trench array, attempting to increase capacitance density by increasing the surface area of ​​the electrode structure. But the capacitance density of deep trench capacitors is actually also greatly influenced by the metal interconnects used in subsequent manufacturing processes.

[0005] The information disclosed in this background section is intended only to enhance the understanding of the overall background of the invention and should not be construed as an admission or in any way implying that the information constitutes prior art known to those skilled in the art. Summary of the Invention

[0006] The purpose of this invention is to provide a trench capacitor electrode structure and a trench capacitor, which have high capacitance density and can significantly improve the electrical performance and structural stability of the device.

[0007] To achieve the above objectives, a specific embodiment of the present invention provides the following technical solution:

[0008] A trench capacitor electrode structure, comprising:

[0009] The substrate has a first surface, the first surface including a plurality of interconnected regions arranged in a periodic manner;

[0010] A primitive array is disposed on a first surface of the substrate. The primitive array includes a plurality of primitive units arranged periodically. Each primitive unit corresponds to an interconnection region. Each primitive unit includes a plurality of primitive groups arranged around its corresponding interconnection region. Each primitive group includes a plurality of strip primitives arranged side by side.

[0011] Each of the said primitive units has multiple rotational symmetries.

[0012] In one or more embodiments of the present invention, the multiple sets of primitive groups within each primitive unit have the same structure, and each primitive unit is formed by rotating any one of the primitive groups multiple times around the interconnection region as the center point in a clockwise or counterclockwise direction.

[0013] In one or more embodiments of the present invention, adjacent primitive units are not arranged to overlap; and / or, adjacent primitive groups are not arranged to overlap.

[0014] In one or more embodiments of the present invention, the primitive unit includes three sets of primitive groups with identical structures, and the three sets of primitive groups constitute a primitive unit with triple rotational symmetry.

[0015] In one or more embodiments of the present invention, the three sets of primitive groups include a first primitive group, a second primitive group, and a third primitive group arranged in a ring along the interconnection region;

[0016] The first primitive group is arranged parallel to the first direction, the second primitive group is arranged parallel to the second direction, and the third primitive group is arranged parallel to the third direction, wherein the included angle between each pair of the first direction, the second direction, and the third direction is 120°.

[0017] In one or more embodiments of the present invention, the first direction is a horizontal direction, or the angle between the first direction and the horizontal direction is θ1, and the range of θ1 is 0° to 90°.

[0018] In one or more embodiments of the present invention, the length L1 of the plurality of bar primitives in each group of primitives is equal.

[0019] In one or more embodiments of the present invention, a plurality of strip primitives within each group of primitives are arranged in a stepped manner in a direction away from the interconnection region.

[0020] In one or more embodiments of the present invention, the center-connecting line of the plurality of strip-shaped basic elements within the first basic element is parallel to the second direction, the center-connecting line of the plurality of strip-shaped basic elements within the second basic element is parallel to the third direction, and the center-connecting line of the plurality of strip-shaped basic elements within the third basic element is parallel to the first direction; or...

[0021] The center line connecting the multiple strip elements within the first primitive is parallel to the third direction; the center line connecting the multiple strip elements within the second primitive is parallel to the first direction; and the center line connecting the multiple strip elements within the third primitive is parallel to the second direction.

[0022] In one or more embodiments of the present invention, the primitive unit includes four sets of primitive groups with identical structures, and the four sets of primitive groups constitute a primitive unit with fourfold rotational symmetry.

[0023] In one or more embodiments of the present invention, the four sets of primitives include a fourth set of primitives, a fifth set of primitives, a sixth set of primitives, and a seventh set of primitives arranged in a ring along the interconnection region;

[0024] The fourth and sixth primitive groups are arranged parallel to the first direction, and the fifth and seventh primitive groups are arranged parallel to the fourth direction, wherein the first direction is perpendicular to the fourth direction.

[0025] In one or more embodiments of the present invention, one of the first direction and the fourth direction is a horizontal direction and the other is a vertical direction; or,

[0026] The angle between one of the first direction and the fourth direction and the horizontal direction is θ2, and the angle between the other direction and the vertical direction is θ2, with θ2 ranging from 0° to 90°.

[0027] In one or more embodiments of the present invention, the vertical distance D between the top of the fourth primitive group and the top of the fifth primitive group in the fourth direction is... t Greater than or equal to 0; and / or,

[0028] The interconnection region has a preset length L0 in the fourth direction, and the vertical distance D between the bottom of the fourth primitive group and the bottom of the fifth primitive group in the fourth direction is... b Greater than or equal to L0.

[0029] In one or more embodiments of the present invention, the length L1 of the plurality of bar primitives within each group of primitives is equal; and / or,

[0030] The width W1 of the multiple strip primitives within each group of primitives remains constant, gradually decreases, or gradually increases in the direction away from the interconnection region; and / or,

[0031] The spacing D1 between adjacent strip primitives within each group of primitives remains constant or gradually decreases or gradually increases in the direction away from the interconnection region; and / or,

[0032] Multiple strip primitives within each group of primitives are arranged in a stepped manner in the direction away from the interconnection region.

[0033] In one or more embodiments of the present invention, the strip element includes a column protruding from the first surface and / or a groove recessed in the first surface.

[0034] A trench capacitor, characterized in that it includes the trench capacitor electrode structure described above.

[0035] Compared with the prior art, the trench capacitor electrode structure and trench capacitor of the present invention, through the high-density array of basic elements and the arrangement design of interconnection regions on the first surface of the substrate, greatly improve the capacitance density of the trench capacitor, effectively increase the electrode surface area and optimize the electric field distribution, improve the high-frequency characteristics of the device, significantly improve the electrical performance of the device, and improve the structural stability of the device.

[0036] The trench capacitor electrode structure and trench capacitor of the present invention innovatively integrate a large number of interconnect regions in a high-density element array, which greatly facilitates subsequent metal interconnection and improves process compatibility and device reliability.

[0037] The trench capacitor electrode structure and trench capacitor of the present invention, through the array arrangement of high-density basic units with multiple rotational symmetries combined with the arrangement of interconnect regions, can allow for more uniform material deposition and filling, reduce voids and cracks caused by material filling in actual processes, and improve the quality and uniformity of the device.

[0038] The trench capacitor electrode structure and trench capacitor of the present invention, through the arrangement of basic units with multiple rotational symmetries, can uniformly distribute the load, reduce the degree of stress concentration, provide better self-weight distribution, and the basic units with multiple rotational symmetries have more uniform thermal expansion when affected by external temperature changes, which can better prevent interface damage caused by differences in material expansion coefficients and improve the stability and reliability of the device.

[0039] The trench capacitor electrode structure and trench capacitor of the present invention can balance charge distribution, reduce leakage current generation, optimize electric field distribution, and improve device reliability by adjusting various parameters of the element array and interconnection region.

[0040] The trench capacitor electrode structure and trench capacitor of the present invention can shorten the current path, reduce resistance, and lower ESR (equivalent series resistance); by setting the basic unit with multiple rotational symmetries, some parasitic inductance can be offset, improving high-frequency response characteristics and reducing ESL (equivalent series inductance). Attached Figure Description

[0041] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0042] Figure 1 This is a schematic diagram of the planar topography of the trench capacitor electrode structure in Embodiment 1 of the present invention;

[0043] Figure 2 for Figure 1 Detailed diagram of the basic unit in the image;

[0044] Figure 3 This is a schematic diagram of the planar topography of the trench capacitor electrode structure in Embodiment 2 of the present invention;

[0045] Figure 4 for Figure 3 Detailed diagram of the basic unit in the image;

[0046] Figure 5 This is a detailed diagram of the basic unit of the trench capacitor electrode structure in Embodiment 3 of the present invention;

[0047] Figure 6 This is a detailed diagram of the basic unit of the trench capacitor electrode structure in Embodiment 4 of the present invention;

[0048] Figure 7 This is a schematic diagram of the planar topography of the trench capacitor electrode structure in Embodiment 5 of the present invention;

[0049] Figure 8 for Figure 7 Detailed diagram of the basic unit in the image;

[0050] Figure 9 This is a detailed diagram of the basic unit of the trench capacitor electrode structure in Embodiment 6 of the present invention;

[0051] Figure 10 This is a schematic diagram of the planar topography of the trench capacitor electrode structure in Embodiment 7 of the present invention;

[0052] Figure 11 for Figure 10 Detailed diagram of the basic unit in the image;

[0053] Figure 12 This is a detailed diagram of the basic unit of the trench capacitor electrode structure in Embodiment 8 of the present invention;

[0054] Figure 13 This is a detailed diagram of the basic unit of the trench capacitor electrode structure in Embodiment 9 of the present invention;

[0055] Figure 14 This is a schematic diagram of the planar topography of the trench capacitor electrode structure in Comparative Example 1 (without interconnection regions);

[0056] Figure 15 A comparison diagram of capacitance density of trench capacitor structures fabricated using the trench capacitor electrode structures of Embodiments 1, 5 and Comparative Example 1 of the present invention.

[0057] Figure 16 This is a schematic diagram of the planar topography of the trench capacitor electrode structure in Comparative Example 2 (without interconnection regions);

[0058] Figure 17 The trench capacitor electrode structures of Embodiments 2, 5, and 7 of the present invention and Figure 16 The three-dimensional simulation warpage cloud diagram of the trench capacitor electrode structure shown in Comparative Example 2;

[0059] Figure 18 To and Figure 17 The graph shows the variation of the unit capacitance density warp value in the corresponding warp cloud map. Detailed Implementation

[0060] To enable those skilled in the art to better understand the technical solutions of this invention, the technical solutions of the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this invention, and not all embodiments. Based on the embodiments of this invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of this invention.

[0061] As mentioned in the background section, for trench capacitors with ever-increasing capacitance density requirements, current technological evolution mainly revolves around two core dimensions: vertical extension of the trench structure through high aspect ratio etching processes and horizontal layout of high-density trench arrays using advanced photolithography techniques. Currently, the technology for vertical extension of the trench structure through high aspect ratio etching processes is quite mature, while the horizontal layout of high-density trench arrays using advanced photolithography still has potential for further exploration and development.

[0062] The design of high-density trench arrays often requires finding an optimal balance between parasitic parameter suppression and mechanical reliability to ensure at least the mechanical stability of the structure and the subsequent filling of dielectric and poly layers. However, existing deep trench capacitor designs, in order to improve capacitance density, generally only consider the high density of the trench array, attempting to increase capacitance density by increasing the surface area of ​​the electrode structure. However, the capacitance density of deep trench capacitors is actually quite dependent on the metal interconnects in subsequent processes.

[0063] Based on this, the present invention provides a trench capacitor electrode structure and a trench capacitor. By using a high-density array of basic units with multiple rotational symmetries to form a basic unit array, combined with the arrangement design of interconnect regions for metal interconnection in subsequent processes, the capacitance density is significantly increased, while the electrode surface area is effectively increased and the electric field distribution is optimized, thereby improving the high-frequency characteristics of the device, significantly improving the electrical performance of the device, and enhancing the structural stability of the device.

[0064] The trench capacitor electrode structure and trench capacitor of the present invention perfectly solve the technical bottlenecks of traditional deep trench capacitors in terms of high capacitance density, structural stability and process compatibility, and can be widely used in aerospace electronics, MEMS sensors, advanced packaging and high-power energy storage devices.

[0065] The trench capacitor electrode structure of the present invention includes a substrate and a primitive array disposed on the substrate. The substrate has a first surface, the first surface including a plurality of interconnected regions arranged periodically; the primitive array is disposed on the first surface of the substrate, the primitive array including a plurality of primitive units arranged periodically, each primitive unit corresponding to an interconnected region, each primitive unit including a plurality of primitive groups arranged around its corresponding interconnected region, each primitive group including a plurality of strip primitives arranged side by side; wherein, each primitive unit has multiple rotational symmetries.

[0066] Specifically, each primitive unit contains multiple identical primitive groups. Each primitive unit is formed by rotating any one of these primitive groups multiple times around the interconnection region as the center point, either clockwise or counterclockwise. Adjacent primitive units do not overlap. Adjacent primitive groups do not overlap.

[0067] In one embodiment, the primitive unit includes three sets of primitive groups with identical structures, and the three sets of primitive groups constitute a primitive unit with triple rotational symmetry.

[0068] In this embodiment, the three primitive groups include a first primitive group, a second primitive group, and a third primitive group arranged in a ring along the interconnection region; the first primitive group is arranged parallel to a first direction, the second primitive group is arranged parallel to a second direction, and the third primitive group is arranged parallel to a third direction, wherein the angle between any pair of the first direction, the second direction, and the third direction is 120°. The first direction is a horizontal direction, or the angle between the first direction and the horizontal direction is θ1, where θ1 ranges from 0° to 90°.

[0069] In one embodiment, the primitive unit includes four sets of primitive groups with identical structures, and the four sets of primitive groups constitute a primitive unit with fourfold rotational symmetry.

[0070] In this embodiment, the four primitive groups include a fourth primitive group, a fifth primitive group, a sixth primitive group, and a seventh primitive group arranged in a ring along the interconnection region; the fourth and sixth primitive groups are arranged parallel to the first direction, and the fifth and seventh primitive groups are arranged parallel to the fourth direction, wherein the first direction is perpendicular to the fourth direction. One of the first and fourth directions is a horizontal direction, and the other is a vertical direction, or, one of the first and fourth directions makes an angle θ2 with the horizontal direction, and the other makes an angle θ2 with the vertical direction, wherein θ2 ranges from 0° to 90°.

[0071] The present invention also provides a trench capacitor, including the trench capacitor electrode structure described above.

[0072] The trench capacitor electrode structure and trench capacitor of the present invention, through the high-density element array and interconnection region arrangement design on the first surface of the substrate, greatly improve the capacitance density of the trench capacitor, effectively increase the electrode surface area and optimize the electric field distribution, improve the high-frequency characteristics of the device, significantly improve the electrical performance of the device, and improve the structural stability of the device.

[0073] The trench capacitor electrode structure of the present invention will be further described below with reference to several specific embodiments.

[0074] Example 1:

[0075] like Figure 1 and Figure 2 As shown, the trench capacitor electrode structure in this embodiment includes a substrate 10 and a primitive array formed on the substrate 10.

[0076] The substrate 10 has a first surface that serves as a support structure for the primitive array. The first surface includes a plurality of first regions A arranged in a periodic array. Each first region A includes an interconnect region A1 located in the center and an outer primitive region A2 surrounding the interconnect region A1. In this embodiment, the first region A is a hexagonal region, and the interconnect region A1 is a triangular region. It is understood that the first regions A on the first surface are virtual regions, defined for ease of correspondence with the description of the primitive unit 20 in the primitive array below.

[0077] In this embodiment, a three-dimensional rectangular coordinate system is established on the first surface of the substrate 10 as the bottom plane. The horizontal direction is defined as the first direction, illustrated as the x-direction. Two directions on the bottom plane, rotated 120° clockwise and counterclockwise from the horizontal direction respectively, are defined as the second and third directions. The second direction is illustrated as the m-direction, and the third direction as the n-direction. The direction perpendicular to the first surface is defined as the z-direction.

[0078] A primitive array is disposed on a first surface of the substrate 10. The primitive array includes a plurality of periodically distributed primitive units 20, with adjacent primitive units 20 not overlapping. Each primitive unit 20 corresponds to a first region A. Each primitive unit 20 includes three sets of primitive groups 21 disposed within a peripheral primitive region A2 of the corresponding first region A, and the three sets of primitive groups 21 are disposed around an interconnection region A1 of the first region A in which they are located.

[0079] The three sets of primitive groups 21 have identical structures. Any one of the three sets of primitive groups 21 is rotated three times clockwise or counterclockwise at equal angles of 120° with the corresponding interconnection region A1 as the center point to form a primitive unit 20. Therefore, each primitive unit 20 has triple rotational symmetry. Adjacent primitive groups 21 are not arranged to overlap.

[0080] Each group of basic elements 21 includes three parallel strip-shaped basic elements 211. Each strip-shaped basic element 211 has a length of L1 and a width of W1. The strip-shaped basic element 211 can be a column protruding from the first surface of the substrate 10 (in the z-direction shown in the figure), or a groove recessed into the first surface of the substrate 10 (in the z-direction shown in the figure). The strip-shaped basic element 211 is part of the electrode structure.

[0081] In this embodiment, the three bar-shaped primitives 211 are arranged with equal lengths, each L1; the three bar-shaped primitives 211 are arranged with equal widths, each W1; adjacent bar-shaped primitives 211 are spaced equally, with a spacing of D1. The center line connecting the three bar-shaped primitives 211 in each primitive group is perpendicular to the extension direction of the bar-shaped primitives 211 in that primitive group.

[0082] refer to Figure 2 As shown, the three groups of primitives 21 of the primitive unit 20 are arranged in a ring along the interconnection region A1. The three groups of primitives 21 are, respectively, a first primitive group 21a, a second primitive group 21b, and a third primitive group 21c in a clockwise direction. The first primitive group 21a extends parallel to the first direction (x direction in the figure), the second primitive group 21b extends parallel to the second direction (m direction in the figure), and the third primitive group 21c extends parallel to the third direction (n direction in the figure). The center line connecting the three strip primitives 211 in the first primitive group 21a is perpendicular to the first direction (x direction in the figure); the center line connecting the three strip primitives 211 in the second primitive group 21b is perpendicular to the second direction (m direction in the figure); and the center line connecting the three strip primitives 211 in the third primitive group 21c is perpendicular to the third direction (n direction in the figure).

[0083] The following explanation uses the positional relationship between the first primitive group 21a and the second primitive group 21b as an example. The bottom of the first primitive group 21a and the top of the second primitive group 21b have a distance D perpendicular to the first direction. t2 D t2 Greater than 0.

[0084] It is understandable that, since the primitive unit 20 is a graphic with triple rotational symmetry, after rotating the primitive unit 20 counterclockwise by 120°, the positional relationship between the second primitive group 21b and the third primitive group 21c should be consistent with the positional relationship between the first primitive group 21a and the second primitive group 21b; and so on, the positional relationship between the third primitive group 21c and the first primitive group 21a should still be consistent with the positional relationship between the first primitive group 21a and the second primitive group 21b.

[0085] refer to Figure 1 As shown, in this embodiment, the distance between adjacent primitive units 20 in the first direction (x direction) is P. 11 The distance between adjacent primitive units 20 perpendicular to the first direction is P. 12 P 21 and P 22 The values ​​are all greater than 0. In the first direction (x direction), adjacent primitive units 20 have a misalignment distance P perpendicular to the first direction. 13 P 13 The value is greater than 0 and preferably P. 12 Half of it.

[0086] Understandably, P 11 P is defined as the straight-line distance between the centers of adjacent primitive units 20 in the first direction; 12 P is defined as the straight-line distance between the centers of adjacent primitive units 20 perpendicular to the first direction; 13 It is defined as the straight-line distance between the centers of adjacent primitive units 20 in the first direction, perpendicular to the first direction.

[0087] It is understandable that the above parameters, such as length L1, width W1, spacing D1, and spacing D, are... t2 Distance P 11 Distance P 12 Displacement distance P 13 These parameters are not fixed and can be adjusted adaptively according to actual process nodes or structural needs. Among them, if the length L1 is reduced, the width W1 is increased, or the spacing D1 is reduced while the other variable remains unchanged, the total capacitance of the resulting element array will be increased after the capacitor is manufactured later.

[0088] Example 2:

[0089] refer to Figure 3 and Figure 4 As shown, the trench capacitor electrode structure in this embodiment includes a substrate 10 and a primitive array formed on the substrate 10.

[0090] The substrate 10 has a first surface that serves as a support structure for the primitive array. The first surface includes a plurality of first regions A arranged in a periodic array. Each first region A includes an interconnect region A1 located in the center and an outer primitive region A2 surrounding the interconnect region A1. In this embodiment, the first region A is a hexagonal region, and the interconnect region A1 is a triangular region. It is understood that the first regions A on the first surface are virtual regions, defined for ease of correspondence with the description of the primitive unit 20 in the primitive array below.

[0091] In this embodiment, a three-dimensional rectangular coordinate system is established on the first surface of the substrate 10 as the bottom plane. The horizontal direction is defined as the first direction, illustrated as the x-direction. Two directions on the bottom plane, rotated 120° clockwise and counterclockwise from the horizontal direction respectively, are defined as the second and third directions. The second direction is illustrated as the m-direction, and the third direction as the n-direction. The direction perpendicular to the first surface is defined as the z-direction.

[0092] A primitive array is disposed on a first surface of the substrate 10. The primitive array includes a plurality of periodically distributed primitive units 20, with adjacent primitive units 20 not overlapping. Each primitive unit 20 corresponds to a first region A. Each primitive unit 20 includes three sets of primitive groups 21 disposed within a peripheral primitive region A2 of the corresponding first region A, and the three sets of primitive groups 21 are disposed around an interconnection region A1 of the first region A in which they are located.

[0093] The three sets of primitive groups 21 have identical structures. Any one of the three sets of primitive groups 21 is rotated three times clockwise or counterclockwise at equal angles of 120° with the corresponding interconnection region A1 as the center point to form a primitive unit 20. Therefore, each primitive unit 20 has triple rotational symmetry. Adjacent primitive groups 21 are not arranged to overlap.

[0094] Each group of basic elements 21 includes three parallel strip-shaped basic elements 211. Each strip-shaped basic element 211 has a length of L1 and a width of W1. The strip-shaped basic element 211 can be a column protruding from the first surface of the substrate 10 (in the z-direction shown in the figure), or a groove recessed into the first surface of the substrate 10 (in the z-direction shown in the figure). The strip-shaped basic element 211 is part of the electrode structure.

[0095] In this embodiment, the three strip-shaped primitives 211 are arranged with equal lengths, each L1; the three strip-shaped primitives 211 are arranged with equal widths, each W1; adjacent strip-shaped primitives 211 are spaced equally, with a spacing of D1. The three strip-shaped primitives 211 in each primitive group are distributed in a stepped manner in the direction away from the interconnection region A1, and the center line connecting the three strip-shaped primitives 211 in each primitive group is parallel to the extension direction of the strip-shaped primitives 211 in the next primitive group in the clockwise direction.

[0096] refer to Figure 4 As shown, the three groups of primitives 21 of the primitive unit 20 are arranged in a ring along the interconnection region A1. The three groups of primitives 21 are, respectively, the first primitive group 21a, the second primitive group 21b, and the third primitive group 21c in a clockwise direction. The first primitive group 21a extends parallel to the first direction (x direction in the figure), the second primitive group 21b extends parallel to the second direction (m direction in the figure), and the third primitive group 21c extends parallel to the third direction (n direction in the figure). The center line connecting the three bar primitives 211 in the first primitive group 21a is set parallel to the second direction (m direction in the figure), that is, the center line connecting the three bar primitives 211 in the first primitive group 21a is parallel to the extension direction of the three bar primitives 211 in the second primitive group 21b; the center line connecting the three bar primitives 211 in the second primitive group 21b is set parallel to the third direction (n direction in the figure), that is, the center line connecting the three bar primitives 211 in the second primitive group 21b is parallel to the extension direction of the three bar primitives 211 in the third primitive group 21c; the center line connecting the three bar primitives 211 in the third primitive group 21c is set parallel to the first direction (x direction in the figure), that is, the center line connecting the three bar primitives 211 in the third primitive group 21c is parallel to the extension direction of the three bar primitives 211 in the first primitive group 21a.

[0097] The following explanation uses the positional relationship between the first primitive group 21a and the second primitive group 21b as an example. The top of the first primitive group 21a and the top of the second primitive group 21b have a distance D perpendicular to the first direction. t1 D t1 Greater than 0. The bottom of the first primitive group 21a and the bottom of the strip primitive 211 closest to the interconnect region A1 in the second primitive group 21b have a spacing D perpendicular to the first direction. t2 D t2 Greater than 0 and D t2 The length of the interconnection region A1 is greater than or equal to the preset length L0 in the direction perpendicular to the first direction.

[0098] It is understandable that, since the primitive unit 20 is a graphic with triple rotational symmetry, after rotating the primitive unit 20 counterclockwise by 120°, the positional relationship between the second primitive group 21b and the third primitive group 21c should be consistent with the positional relationship between the first primitive group 21a and the second primitive group 21b; and so on, the positional relationship between the third primitive group 21c and the first primitive group 21a should still be consistent with the positional relationship between the first primitive group 21a and the second primitive group 21b.

[0099] refer to Figure 3 As shown, in this embodiment, the distance between adjacent primitive units 20 in the first direction (x direction) is P. 11 The distance between adjacent primitive units 20 perpendicular to the first direction is P. 12 Arranged at equal intervals, P 11 and P 12 The values ​​are all greater than 0. In the first direction (x direction), adjacent primitive units 20 have a misalignment distance P perpendicular to the first direction. 13 P 13 The value is greater than 0.

[0100] Understandably, P 11 P is defined as the straight-line distance between the centers of adjacent primitive units 20 in the first direction; 12 P is defined as the straight-line distance between the centers of adjacent primitive units 20 perpendicular to the first direction; 13 It is defined as the straight-line distance between the centers of adjacent primitive units 20 in the first direction, perpendicular to the first direction.

[0101] It is understandable that the above parameters, such as length L1, width W1, spacing D1, and spacing D, are... t1 Spacing D t2 Distance P 11 Distance P 12 Displacement distance P 13 The preset length L0 of the interconnect region A1 is not fixed and can be adaptively adjusted according to actual process nodes or structural needs. Among them, if the length L1 is reduced, the width W1 is increased, or the spacing D1 is reduced while other variable variables remain unchanged, the total capacitance of the resulting element array will be increased after the capacitor is fabricated later.

[0102] Example 3:

[0103] refer to Figure 5As shown, the arrangement of the basic units in this embodiment is exactly the same as that in Embodiment 2. The difference is that the basic unit 20 in this embodiment is a chiral unit of the basic unit 20 in Embodiment 2. That is, the basic unit 20 in this embodiment is mirror-symmetrical to the basic unit 20 in Embodiment 2, but they cannot be completely superimposed.

[0104] Example 4:

[0105] refer to Figure 6 As shown, the arrangement of the basic units in this embodiment is exactly the same as that in Embodiment 2. The difference is that the basic unit 20 in this embodiment is formed by rotating each group of basic units 21 in Embodiment 2 counterclockwise or clockwise by θ1 with the apex of the strip basic unit 211 at the outermost edge in the direction away from the interconnection region A1 as the center point. That is, in this embodiment, the angle between the defined first direction and the horizontal direction is θ1, and the range of θ1 is between 0° and 90°. The angle between any two of the first direction, the second direction, and the third direction is still 120°.

[0106] It is understood that in embodiments 1-4 above, each group of basic units 21 contains three strip basic units 211, all of which are of equal length and width, and adjacent strip basic units 211 are equally spaced. In other embodiments, each group of basic units 21 may also include four or more strip basic units 211, and / or the width W1 of multiple strip basic units 211 may gradually decrease or increase in the direction away from their corresponding interconnection region A1; and / or the spacing D1 between adjacent strip basic units 211 in each group of basic units 21 may also gradually decrease or increase in the direction away from their corresponding interconnection region A1. In this technical solution, the gradual setting of width W1 and / or spacing D1 can regulate the stress of the electrode layer and dielectric layer and other layer structures formed on the electrode structure later, preventing warping. It is understandable that the width W1 of multiple strip primitives 211 can also be different in the direction away from their corresponding interconnection region A1; the spacing D1 between adjacent strip primitives 211 in each group of primitives 21 can also be different in the direction away from their corresponding interconnection region A1.

[0107] Example 5:

[0108] refer to Figure 7 and Figure 8 As shown, the trench capacitor electrode structure in this embodiment includes a substrate 10 and a primitive array formed on the substrate 10.

[0109] The substrate 10 has a first surface that serves as a support structure for the primitive array. The first surface includes a plurality of first regions A arranged in a periodic array. Each first region A includes an interconnect region A1 located in the center and an outer primitive region A2 surrounding the interconnect region A1. In this embodiment, the first regions A and the interconnect region A1 are square regions. It is understood that the first regions A on the first surface are virtual regions, defined for ease of correspondence with the description of the primitive unit 20 in the primitive array below.

[0110] In this embodiment, a three-dimensional Cartesian coordinate system is established on the first surface of the substrate 10 as the bottom plane. The horizontal direction is defined as the first direction (represented by the x-direction in the illustration), the vertical direction is defined as the fourth direction (represented by the y-direction in the illustration), and the direction perpendicular to the first surface is defined as the z-direction.

[0111] A primitive array is disposed on a first surface of the substrate 10. The primitive array includes a plurality of periodically distributed primitive units 20, with adjacent primitive units 20 not overlapping. Each primitive unit 20 corresponds to a first region A. Each primitive unit 20 includes four sets of primitive groups 21 disposed within a peripheral primitive region A2 of the corresponding first region A, and the four sets of primitive groups 21 are disposed around the interconnection region A1 of the first region A in which they are located.

[0112] The four sets of primitive groups 21 have identical structures. Any one of the four sets of primitive groups 21 is rotated four times clockwise or counterclockwise at equal angles of 90° around the corresponding interconnection region A1 to form a primitive unit 20. Therefore, each primitive unit 20 has fourfold rotational symmetry. Adjacent primitive groups 21 are not arranged to overlap.

[0113] Each group of basic elements 21 includes three strip-shaped basic elements 211 arranged side by side in a direction away from the interconnect region A1. Each strip-shaped basic element 211 has a length of L1 and a width of W1. The strip-shaped basic element 211 can be a column protruding from the first surface of the substrate 10 (in the z direction shown in the figure) or a groove recessed into the first surface of the substrate 10 (in the z direction shown in the figure). The strip-shaped basic element 211 is part of the electrode structure.

[0114] In this embodiment, the three bar-shaped primitives 211 are arranged with equal lengths, each L1; the three bar-shaped primitives 211 are arranged with equal widths, each W1; adjacent bar-shaped primitives 211 are spaced equally, with a spacing of D1. The center line connecting the three bar-shaped primitives 211 in each primitive group 21 is perpendicular to the extension direction of the bar-shaped primitives 211 in that primitive group.

[0115] refer to Figure 8As shown, the four groups of primitives 21 of the primitive unit 20 are arranged in a ring along the interconnection region A1. The four groups of primitives 21, arranged clockwise, are the fourth primitive group 21d, the fifth primitive group 21e, the sixth primitive group 21f, and the seventh primitive group 21g. The fourth primitive group 21d and the sixth primitive group 21f are arranged parallel to the first direction (the x-direction shown in the figure), while the fifth primitive group 21e and the seventh primitive group 21g are arranged parallel to the fourth direction. In this embodiment, the fourth direction is perpendicular to the first direction, i.e., the y-direction shown in the figure.

[0116] The following explanation uses the positional relationship between the fourth primitive group 21d and the fifth primitive group 21e as an example. The vertical distance D between the top of the fourth primitive group 21d and the top of the fifth primitive group 21e in the fourth direction (the y-direction in the diagram) is... t1 The vertical distance D between the bottom of the fourth primitive group 21d and the bottom of the fifth primitive group 21e in the fourth direction (the y-direction in the diagram) equals 0. t2 The length L0 of the interconnect region A1 in the fourth direction (y direction in the diagram) is greater than or equal to the preset length L0. The vertical distance between the right end of the fourth primitive group 21d and the left side of the fifth primitive group 21e in the first direction (x direction in the diagram) is D2, and D2 is greater than 0.

[0117] It is understandable that, since primitive unit 20 is a graphic with fourfold rotational symmetry, after rotating primitive unit 20 counterclockwise by 90°, the positional relationship between the fifth primitive group 21e and the sixth primitive group 21f should be consistent with the positional relationship between the fourth primitive group 21d and the fifth primitive group 21e; ​​and so on, the positional relationship between the sixth primitive group 21f and the seventh primitive group 21g should still be consistent with the positional relationship between the fourth primitive group 21d and the fifth primitive group 21e; ​​the positional relationship between the seventh primitive group 21g and the fourth primitive group 21d should still be consistent with the positional relationship between the fourth primitive group 21d and the fifth primitive group 21e.

[0118] refer to Figure 7 As shown, in this embodiment, the basic unit 20 is at a distance P in the first direction (x direction). 21 Arranged at equal intervals, with a distance P in the fourth direction (y direction). 22 Arranged at equal intervals, P 21 equals P 22 And all are greater than 0. In the first direction (x direction), adjacent primitive units 20 are not misaligned in the fourth direction (y direction).

[0119] In other embodiments, adjacent primitive units 20 may also have a misalignment distance P in the fourth direction (y direction) in the first direction (x direction). 23 (Not shown in the figure), misalignment distance P 23 The value is greater than 0.

[0120] Understandably, P 21 P is defined as the straight-line distance between the centers of adjacent primitive units 20 in the first direction; 22 P is defined as the straight-line distance between the centers of adjacent primitive units 20 in the fourth direction; 23 It is defined as the straight-line distance between the centers of adjacent primitive units 20 in the first direction in the fourth direction.

[0121] It is understandable that the above parameters, such as length L1, width W1, spacing D1, and spacing D, are... t1 Spacing D t2 Distance P 21 Distance P 22 Displacement distance P 23 The preset length L0 of the interconnect region A1 is not fixed and can be adaptively adjusted according to actual process nodes or structural needs. Among them, if the length L1 is reduced, the width W1 is increased, or the spacing D1 is reduced while other variable variables remain unchanged, the total capacitance of the resulting element array will be increased after the capacitor is fabricated later.

[0122] Example 6:

[0123] refer to Figure 9 As shown, the arrangement of the basic units in this embodiment is exactly the same as that in Embodiment 5. The difference is that the basic unit 20 in this embodiment is a chiral unit of the basic unit 20 in Embodiment 5. That is, the basic unit 20 in this embodiment is mirror-symmetrical to the basic unit 20 in Embodiment 5, but they cannot be completely overlapped.

[0124] Example 7:

[0125] refer to Figure 10 and Figure 11 As shown, the arrangement of the basic units of the trench capacitor electrode structure in this embodiment is exactly the same as that in Embodiment 5.

[0126] In this embodiment, each group of basic elements 21 still includes three strip-shaped basic elements 211 arranged side by side in the direction away from the interconnect region A1. Each strip-shaped basic element 211 has a length of L1 and a width of W1. The strip-shaped basic element 211 can be a column protruding from the first surface perpendicular to the first surface of the substrate 10 (in the z direction shown in the figure), or it can be a groove recessed into the first surface perpendicular to the first surface of the substrate 10 (in the z direction shown in the figure). The strip-shaped basic element 211 is part of the electrode structure.

[0127] In this embodiment, the three bar-shaped primitives 211 are arranged with equal lengths, each L1; the three bar-shaped primitives 211 are arranged with equal widths, each W1; adjacent bar-shaped primitives 211 are arranged with equal spacing, each spacing D1. The center line connecting the three bar-shaped primitives 211 in each primitive group 21 is perpendicular to the extension direction of the bar-shaped primitives 211 in that primitive group.

[0128] The four groups of primitives 21 of the primitive unit 20 are arranged in a ring along the interconnection region A1. The four groups of primitives 21, arranged clockwise, are designated as the fourth primitive group 21d, the fifth primitive group 21e, the sixth primitive group 21f, and the seventh primitive group 21g. The fourth primitive group 21d and the sixth primitive group 21f are parallel to the first direction (the x-direction shown in the figure), while the fifth primitive group 21e and the seventh primitive group 21g are parallel to the fourth direction. In this embodiment, the fourth direction is perpendicular to the first direction, i.e., the y-direction shown in the figure.

[0129] The difference between this embodiment and embodiment 5 is that the arrangement of the primitive groups constituting the primitive unit 20 in this embodiment is different from that in embodiment 5.

[0130] The following explanation uses the positional relationship between the fourth primitive group 21d and the fifth primitive group 21e as an example.

[0131] refer to Figure 11 As shown, the difference between this embodiment and Embodiment 5 is that the vertical distance D between the top of the fourth primitive group 21d and the top of the fifth primitive group 21e in the fourth direction (the y-direction shown in the figure) is... t1 Greater than 0 but less than the length L1 of the bar primitive. The vertical distance D between the bottom of the fourth primitive group 21d and the bottom of the fifth primitive group 21e in the fourth direction (y-direction in the diagram). t2 The length of the interconnect region A1 in the fourth direction (y direction in the diagram) is greater than or equal to the preset length L0 of the interconnect region A1 in the fourth direction (y direction in the diagram), but is still less than the length L1 of the strip cell. In this embodiment, the preset length of the interconnect region A1 in the fourth direction (y direction in the diagram) is less than the preset length of the interconnect region A1 in the fourth direction (y direction in the diagram) in embodiment 5.

[0132] Example 8:

[0133] refer to Figure 12 As shown, the arrangement of the basic units in this embodiment is exactly the same as that in Embodiment 7 of the trench capacitor electrode structure. The difference is that the basic unit 20 in this embodiment is formed by rotating each group of basic units 21 in Embodiment 7 counterclockwise or clockwise by θ2 with the apex corner of the strip basic unit 211 at the outermost edge in the direction away from the interconnection region A1 as the center point. That is, in this embodiment, the angle between the defined first direction and the horizontal direction is θ2, and the range of θ2 is between 0° and 90°.

[0134] Example 9:

[0135] refer to Figure 13 As shown, the arrangement of the basic units of the trench capacitor electrode structure in this embodiment is exactly the same as that in Embodiment 5.

[0136] In this embodiment, each group of basic elements 21 still includes three strip-shaped basic elements 211 arranged side by side in the direction away from the interconnect region A1. Each strip-shaped basic element 211 has a length of L1 and a width of W1. The strip-shaped basic element 211 can be a column protruding from the first surface perpendicular to the first surface of the substrate 10 (in the z direction shown in the figure), or it can be a groove recessed into the first surface perpendicular to the first surface of the substrate 10 (in the z direction shown in the figure). The strip-shaped basic element 211 is part of the electrode structure.

[0137] In this embodiment, the three bar-shaped basic elements 211 are set with equal lengths, and each length is L1; the three bar-shaped basic elements 211 are set with equal widths, and each width is W1; the adjacent bar-shaped basic elements 211 are set with equal spacing, and each spacing is D1.

[0138] The difference between this embodiment and the trench capacitor electrode structure in Embodiment 5 is that the arrangement of the strip-shaped basic units 211 in the basic unit 20 in this embodiment is different from that in Embodiment 5.

[0139] Specifically, in this embodiment, the three strip primitives 211 in each primitive group are distributed in a stepped manner in the direction away from the interconnection region A1. The spacing between the ends of two adjacent strip primitives 211 in each primitive group is equal or gradually decreases.

[0140] It is understood that in embodiments 5-9 above, each group of basic units 21 contains three strip basic units 211, all of which are of equal length and width, and adjacent strip basic units 211 are spaced equally. In other embodiments, each group of basic units 21 may also include four or more strip basic units 211, and / or the width W1 of the multiple strip basic units 211 may gradually decrease or increase in the direction away from their corresponding interconnection region A1; and / or the spacing D1 between adjacent strip basic units 211 in each group of basic units 21 may also gradually decrease or increase in the direction away from their corresponding interconnection region A1. In this technical solution, the gradual setting of the width W1 and / or the spacing D1 can regulate the stress of the electrode layer and dielectric layer and other layers formed on the electrode structure later, preventing warping. It is understandable that the width W1 of multiple strip primitives 211 can also be different in the direction away from their corresponding interconnection region A1; the spacing D1 between adjacent strip primitives 211 in each group of primitives 21 can also be different in the direction away from their corresponding interconnection region A1.

[0141] It should be noted that embodiments 1-4 described above can be combined with each other without contradiction. Embodiments 5-9 described above can also be combined with each other without contradiction. In other embodiments, the chiral units of the basic unit 20 in embodiments 1-9 described above can also be used as basic units and arranged periodically to form a new trench capacitor electrode structure.

[0142] It is understood that the trench capacitor structure can be obtained by fabricating subsequent layer structures (using conventional methods) on the first surface of the substrate and the outer surface of the strip-shaped unit of the aforementioned trench capacitor electrode structure. Since the fabrication of the subsequent layer structures is not the focus of this application, it will not be elaborated upon here.

[0143] refer to Figure 15 As shown, Figure 15 Examples 1, 5, and Comparative Example 1 of the present invention are used as examples. Figure 14 The image shows a comparison of capacitance densities of trench capacitor structures fabricated using trench capacitor electrode structures. Specifically, when the depth or height of the strip element 211 is 10 μm, the capacitance density of Comparative Example 1 is 34.3 nf / mm². 2 The capacitance density of Example 1 is 55.9 nf / mm². 2 The capacitance density of Example 5 is 84.7 nf / mm². 2 When the depth or height of the strip element 211 is 15 μm, the capacitance density of Comparative Example 1 is 64 nf / mm². 2 The capacitance density of Example 1 is 80.5 nf / mm². 2 The capacitance density of Example 5 is 123.7 nF / mm². 2 When the depth or height of the bar-shaped element 211 is 20 μm, the capacitance density of Comparative Example 1 is 84.6 nf / mm². 2 The capacitance density of Example 1 is 105.1 nf / mm². 2 The capacitance density of Example 5 is 162.7 nf / mm². 2 When the depth or height of the bar-shaped element 211 is 25 μm, the capacitance density of Comparative Example 1 is 105.2 nf / mm². 2 The capacitance density of Example 1 is 129.7 nf / mm². 2 The capacitance density of Example 5 is 201.7 nf / mm². 2 When the depth or height of the bar-shaped element 211 is 30 μm, the capacitance density of Comparative Example 1 is 125.8 nf / mm². 2 The capacitance density of Example 1 is 154.3 nf / mm². 2 The capacitance density of Example 5 is 240.7 nf / mm². 2 .from Figure 15As can be seen from the above, the capacitance density of the trench capacitor structure fabricated by the trench capacitor electrode structure in Embodiments 1 and 5 is significantly increased compared to the trench capacitor structure fabricated by the trench capacitor electrode structure without interconnection regions.

[0144] In the mechanical simulation, a three-dimensional structural model with dimensions of 2 mm × 2 mm × 0.1 mm was established to simulate the trench capacitor structure on the substrate. The trench depth was set to 40 μm, and the thickness of the polycrystalline silicon (PS) layer filling the trench was 1 μm. Under the condition that the film growth conditions and basic parameters of each scheme were consistent, the following model was established (e.g., Figure 17 ).

[0145] Figure 17 The trench capacitor electrode structure of the present invention and the trench capacitor electrode structure of Comparative Example 2 (see reference) Figure 16 The three-dimensional simulation warp cloud diagram of the prior art trench capacitor electrode structure shown is presented.

[0146] Among them, (a), (b), and (c) are three-dimensional simulation warping cloud diagrams of the trench capacitor electrode structures of Embodiments 5, 7, and 2 of the present invention, respectively; (d) is a comparative example 2 (reference). Figure 16 The three-dimensional simulation warping cloud diagram of the trench capacitor electrode structure (shown) is shown.

[0147] Based on the above models, stress and warpage deformation simulation analysis was conducted. The warpage value under unit capacitance density was used to evaluate the influence of different model structures on the device warpage deformation, and the results were obtained. Figure 18 The results are shown.

[0148] Figure 18 This is a graph showing the variation of warpage values ​​per unit capacitance density, where a, b, c, and d correspond to... Figure 17 Three-dimensional simulation warping cloud maps (a), (b), (c), and (d) are shown.

[0149] from Figure 18 It can be seen that the trench capacitor electrode structure (a, b, c) of the present invention, especially (a), has better warpage control and a lower warpage value per unit capacitance density. This means that while maintaining high capacitance, the internal stress distribution of the device is more reasonable, which helps to improve high-frequency performance consistency, packaging compatibility and long-term reliability.

[0150] Compared with the prior art, the trench capacitor electrode structure and trench capacitor of the present invention, through the high-density array of basic elements and the arrangement design of interconnection regions on the first surface of the substrate, greatly improve the capacitance density of the trench capacitor, effectively increase the electrode surface area and optimize the electric field distribution, improve the high-frequency characteristics of the device, significantly improve the electrical performance of the device, and improve the structural stability of the device.

[0151] The trench capacitor electrode structure and trench capacitor of the present invention innovatively integrate a large number of interconnect regions in a high-density element array, which greatly facilitates subsequent metal interconnection and improves process compatibility and device reliability.

[0152] The trench capacitor electrode structure and trench capacitor of the present invention, through the array arrangement of high-density basic units with multiple rotational symmetries combined with the arrangement of interconnect regions, can allow for more uniform material deposition and filling, reduce voids and cracks caused by material filling in actual processes, and improve the quality and uniformity of the device.

[0153] The trench capacitor electrode structure and trench capacitor of the present invention, through the arrangement of basic units with multiple rotational symmetries, can uniformly distribute the load, reduce the degree of stress concentration, provide better self-weight distribution, and the basic units with multiple rotational symmetries have more uniform thermal expansion when affected by external temperature changes, which can better prevent interface damage caused by differences in material expansion coefficients and improve the stability and reliability of the device.

[0154] The trench capacitor electrode structure and trench capacitor of the present invention can balance charge distribution, reduce leakage current generation, optimize electric field distribution, and improve device reliability by adjusting various parameters of the element array and interconnection region.

[0155] The trench capacitor electrode structure and trench capacitor of the present invention can shorten the current path, reduce resistance, and lower ESR (equivalent series resistance); by setting the basic unit with multiple rotational symmetries, some parasitic inductance can be offset, improving high-frequency response characteristics and reducing ESL (equivalent series inductance).

[0156] It will be apparent to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the invention can be implemented in other specific forms without departing from its spirit or essential characteristics. Therefore, the embodiments should be considered in all respects as exemplary and non-limiting, and the scope of the invention is defined by the appended claims rather than the foregoing description. Thus, all variations falling within the meaning and scope of equivalents of the claims are intended to be included within the present invention. No reference numerals in the claims should be construed as limiting the scope of the claims.

[0157] Furthermore, it should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This narrative style is merely for clarity. Those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

Claims

1. A trench capacitor electrode structure, characterized in that, include: The substrate has a first surface, the first surface including a plurality of interconnected regions arranged in a periodic manner; A primitive array is disposed on a first surface of the substrate. The primitive array includes a plurality of primitive units arranged periodically. Each primitive unit corresponds to an interconnection region. Each primitive unit includes a plurality of primitive groups arranged around its corresponding interconnection region. Each primitive group includes a plurality of strip primitives arranged side by side. Each of the said basic units has multiple rotational symmetries, and the interconnection region is used for metal interconnection in subsequent processes.

2. The trench capacitor electrode structure according to claim 1, characterized in that, Each of the primitive units contains multiple sets of primitive groups with identical structures. Each primitive unit is formed by rotating any one of the primitive groups multiple times around the interconnection region as the center point in a clockwise or counterclockwise direction.

3. The trench capacitor electrode structure according to claim 1, characterized in that, Adjacent primitive units are not arranged to overlap; and / or adjacent primitive groups are not arranged to overlap.

4. The trench capacitor electrode structure according to claim 1, characterized in that, The primitive unit includes three sets of primitive groups with the same structure, and the three sets of primitive groups constitute a primitive unit with triple rotational symmetry.

5. The trench capacitor electrode structure according to claim 4, characterized in that, The three sets of primitive groups include a first primitive group, a second primitive group, and a third primitive group arranged in a ring along the interconnection region; The first primitive group is arranged parallel to the first direction, the second primitive group is arranged parallel to the second direction, and the third primitive group is arranged parallel to the third direction, wherein the included angle between each pair of the first direction, the second direction, and the third direction is 120°.

6. The trench capacitor electrode structure according to claim 5, characterized in that, The first direction is a horizontal direction, or the angle between the first direction and the horizontal direction is θ1, and the range of θ1 is 0° to 90°.

7. The trench capacitor electrode structure according to claim 5, characterized in that, The length L1 of all the bar primitives in each group of primitives is equal.

8. The trench capacitor electrode structure according to claim 7, characterized in that, Multiple strip primitives within each group of primitives are arranged in a stepped manner in the direction away from the interconnection region.

9. The trench capacitor electrode structure according to claim 8, characterized in that, The center-connecting line of the plurality of strip-shaped primitives within the first primitive is parallel to the second direction; the center-connecting line of the plurality of strip-shaped primitives within the second primitive is parallel to the third direction; and the center-connecting line of the plurality of strip-shaped primitives within the third primitive is parallel to the first direction; or... The center line connecting the multiple strip elements within the first primitive is parallel to the third direction; the center line connecting the multiple strip elements within the second primitive is parallel to the first direction; and the center line connecting the multiple strip elements within the third primitive is parallel to the second direction.

10. The trench capacitor electrode structure according to claim 1, characterized in that, The primitive unit includes four sets of primitive groups with the same structure, and the four sets of primitive groups constitute a primitive unit with fourfold rotational symmetry.

11. The trench capacitor electrode structure according to claim 10, characterized in that, The four groups of primitives include a fourth group, a fifth group, a sixth group, and a seventh group arranged in a ring along the interconnection region; The fourth and sixth primitive groups are arranged parallel to the first direction, and the fifth and seventh primitive groups are arranged parallel to the fourth direction, wherein the first direction is perpendicular to the fourth direction.

12. The trench capacitor electrode structure according to claim 11, characterized in that, One of the first direction and the fourth direction is a horizontal direction, and the other is a vertical direction; or, The angle between one of the first direction and the fourth direction and the horizontal direction is θ2, and the angle between the other direction and the vertical direction is θ2, with θ2 ranging from 0° to 90°.

13. The trench capacitor electrode structure according to claim 11, characterized in that, The vertical distance D between the top of the fourth primitive group and the top of the fifth primitive group in the fourth direction t Greater than or equal to 0; and / or, The interconnection region has a preset length L0 in the fourth direction, and the vertical distance D between the bottom of the fourth primitive group and the bottom of the fifth primitive group in the fourth direction is... b Greater than or equal to L0.

14. The trench capacitor electrode structure according to claim 11, characterized in that, The length L1 of all bar primitives within each group of primitives is equal; and / or, Multiple strip primitives within each group of primitives are arranged in a stepped manner in the direction away from the interconnection region.

15. The trench capacitor electrode structure according to claim 1, characterized in that, The length L1 of all bar primitives within each group of primitives is equal; and / or, The width W1 of the multiple strip primitives within each group of primitives remains constant, gradually decreases, or gradually increases in the direction away from the interconnection region; and / or, The spacing D1 between adjacent strip primitives within each group of primitives remains constant or gradually decreases or gradually increases in the direction away from the interconnection region; and / or, Multiple strip primitives within each group of primitives are arranged in a stepped manner in the direction away from the interconnection region.

16. The trench capacitor electrode structure according to claim 1, characterized in that, The strip-shaped element includes a column protruding from the first surface and / or a groove recessed into the first surface.

17. A trench capacitor, characterized in that, Includes the trench capacitor electrode structure as described in any one of claims 1-16.

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