Wafer cleaning solution preparation system

Abstract

The application belongs to the technical field of wafer cleaning, and specifically relates to a wafer cleaning solution preparation system, which comprises a cabinet body, a placing cavity is formed in the cabinet body, a preparation box is arranged in the placing cavity, a mixing cavity is formed in the preparation box, and various raw materials are mixed in the preparation box, the preparation box comprises: a raw material pipe, a plurality of raw material pipes are inserted into the mixing cavity and are used for conveying different raw materials, a high-pressure spray head, a plurality of high-pressure spray heads are movably connected below the raw material pipe, when the flow rate of the raw material increases, the high-pressure spray head is inclined upward, and the distance between the high-pressure spray head and the inner wall of the mixing cavity increases, and a curved surface, the curved surface is arranged at the end corner of the side of the mixing cavity close to the high-pressure spray head, and each structure in the wafer cleaning solution preparation system cooperates with each other to realize the mixing and preparation of the wafer cleaning solution, the preparation efficiency is high, the mixing effect is good, the actual production preparation demand is met, the quality of the subsequent cleaning solution and the cleaning effect on the wafer are ensured.

Description

Technical Field

[0001] This invention belongs to the field of wafer cleaning technology, specifically a wafer cleaning solution preparation system. Background Technology

[0002] With the rapid development of the semiconductor industry, the requirements for the cleaning process in wafer manufacturing are becoming increasingly stringent. The cleaning process is carried out throughout the wafer manufacturing process, aiming to remove impurities on the wafer surface and ensure the smooth progress of subsequent processes and the high-quality output of wafers. Wafer cleaning fluid requires a variety of raw materials to be mixed in the required proportions.

[0003] Chinese invention patent application CN116598231A provides an independent wafer cleaning fluid supply device, which includes at least: a liquid supply module configured to provide cleaning fluid; and a liquid filtration module configured to filter the cleaning fluid provided by the liquid supply module. The wafer cleaning fluid mixing system has low mixing efficiency and poor mixing effect.

[0004] Chinese invention patent application CN115020269A discloses a wafer cleaning equipment and its cleaning fluid supply device, including: a mixing tank, which is divided into M sequentially adjacent overflow tank areas and supply tank areas, and the height of the openings of the M overflow tank areas and supply tank areas decreases sequentially along the direction closer to the supply tank area; the wafer cleaning fluid supply device is difficult to operate and has low operating accuracy.

[0005] In the aforementioned wafer cleaning solution preparation system, a liquid level sensor is often used to monitor the liquid level of the cleaning solution in real time. However, if the raw materials flow vertically downwards continuously inside the preparation tank to prepare the cleaning solution, the collision between the raw materials and the surface of the cleaning solution will cause fluctuations in the liquid level. At the same time, the raw materials are also prone to generating bubbles when they flow and impact each other. These fluctuations and bubbles not only reduce the quality of the cleaning solution, but also affect the accuracy of the liquid level sensor.

[0006] Furthermore, prolonged impact and flow of the high-pressure nozzle against the side wall of the mixing tank can easily damage the side wall structure and the raw material structure itself, thus failing to guarantee the subsequent mixing effect of the cleaning solution. If the flow rate of the raw material inside the high-pressure nozzle changes, the impact force between the high-pressure nozzle and the inner wall of the mixing tank will change accordingly. The bubbles generated when the raw material is blocked and the wave force of the downward flow on the cleaning solution will change, thus failing to stabilize the liquid surface above the cleaning solution and reduce the bubble effect, and ultimately affecting the accuracy of the liquid level sensor in detecting the liquid level of the cleaning solution.

[0007] Meanwhile, if the amount of raw material sprayed from the high-pressure nozzle changes, the flow rate and flow volume of the raw material in the cleaning fluid will change accordingly. This can easily cause some raw material to flow arbitrarily in the cleaning fluid and fail to mix and modulate fully, ultimately reducing the quality of the subsequent cleaning fluid.

[0008] When the density of the raw materials changes, the raw materials accumulate and settle at different positions inside the cleaning solution, which makes it impossible for the raw materials to mix fully and affects the mixing effect of the cleaning solution. Furthermore, after mixing, the impurities in the raw materials are prone to accumulate inside the mixing tank and will affect the mixing and mixing of subsequent raw materials. Summary of the Invention

[0009] To address the above problems, the present invention provides a wafer cleaning solution preparation system.

[0010] To achieve the above objectives, the present invention provides the following technical solution: a wafer cleaning solution preparation system, comprising a cabinet, wherein a placement cavity is provided inside the cabinet, a preparation box is provided inside the placement cavity, and a mixing chamber is provided inside the preparation box for mixing various raw materials; the preparation box includes:

[0011] Raw material pipes, multiple of which are inserted into the mixing chamber and transport different raw materials;

[0012] High-pressure nozzles, multiple of which are movably connected to the bottom of the raw material pipe, when the raw material flow rate increases, the high-pressure nozzles tilt upward and the distance between them and the inner wall of the mixing chamber increases;

[0013] A curved surface is formed at the end corner of the mixing chamber near the high-pressure nozzle. The raw material flows downward along the side wall of the mixing chamber and enters the interior of the mixing chamber under the guidance of the curved surface.

[0014] The elastic guide plates are movably connected to the inner wall of the mixing chamber on the side away from the curved surface. When the high-pressure nozzle is tilted upward, the distance between the elastic guide plates and the curved surface decreases and the range of guiding the raw material to both sides increases.

[0015] The various components of this wafer cleaning fluid preparation system work together to achieve the mixing and preparation of the wafer cleaning fluid. It has high preparation efficiency and good mixing effect, meeting the actual production preparation needs, ensuring the quality of subsequent cleaning fluid and the cleaning effect on the wafer. In addition, it can adjust the tilt angle of the high-pressure nozzle according to the flow rate of the raw material inside the raw material tube detected by the flow meter, thereby ensuring that the impact force of the high-pressure nozzle on the side wall of the mixing chamber remains stable. At the same time, the raw material flows down along the curved surface and mixes inside the mixing chamber. The larger the tilt angle of the high-pressure nozzle, the smaller the distance between the elastic guide plate and the curved surface, so that the raw materials are dispersed and guided to mix inside the mixing chamber, further improving the raw material mixing and preparation effect.

[0016] Preferably, the mixing box further includes:

[0017] Flow meters, multiple flow meters are disposed inside the raw material pipe and located above the mixing box, the flow meters are used to detect the flow rate of the raw material inside the raw material pipe;

[0018] Feed solenoid valves, multiple of which are disposed inside the raw material pipe and above the flow meter, the feed solenoid valves regulate the raw material flow rate inside the raw material pipe;

[0019] A liquid level sensor, wherein multiple liquid level sensors are fixedly connected to the top of the mixing chamber and detect the liquid level value inside the mixing chamber.

[0020] Preferably, the mixing box further includes:

[0021] The first telescopic part has one end movably connected to the side wall of the raw material pipe and the other end movably connected to the top of the high-pressure nozzle. The output end of the first telescopic part shortens and causes the high-pressure nozzle to tilt upward at an increased angle.

[0022] A rotating shaft is movably connected to the bottom of the raw material pipe, and the other end of the rotating shaft is fixedly connected to the end of the high-pressure nozzle;

[0023] The guide tube has one end passing through the raw material pipe and connected to its interior, and the other end passing through the high-pressure nozzle and connected to its interior. The guide tube is flexible, and the raw material inside the raw material pipe enters the high-pressure nozzle along the guide tube and is discharged to the side wall of the mixing chamber.

[0024] Preferably, the mixing box further includes:

[0025] The second telescopic part, a plurality of the second telescopic parts are fixedly connected to the inner wall of the mixing chamber, and two of the second telescopic parts are arranged in the same vertical direction;

[0026] A tapered rod has its sidewall movably connected to the output end of the second telescopic section. The end of the tapered rod near the curved surface has a tapered structure, and the end of the tapered rod is in contact with the inner wall of the elastic guide plate. When the output end of the second telescopic section extends, it drives the elastic guide plate to elastically deform towards the end near the curved surface through the tapered rod.

[0027] Preferably, the curved surface is smooth and arc-shapedly connected to the sidewall and bottom of the mixing chamber. The curved surface guides the raw material flowing vertically downward from the inner wall of the mixing chamber to flow horizontally along the bottom of the mixing chamber. The elastic guide plate is elastic and matches the bottom of the mixing chamber below, and the upper part of the elastic guide plate corresponds to the upper part of the curved surface. The second telescopic part and the conical rod are both located inside the elastic guide plate, and the end of the elastic guide plate is fixedly connected to the sidewall of the mixing chamber away from the curved surface.

[0028] Preferably, the horizontal distances between the plurality of raw material pipes and the sidewall of the mixing chamber are all equal, and the end of the high-pressure nozzle corresponds to the sidewall of the mixing chamber. The sidewall of the mixing chamber is provided with an impact-resistant layer that matches the rotation angle of the high-pressure nozzle. The positions of the plurality of high-pressure nozzles correspond to the positions of the conical rods, and the range of motion of the high-pressure nozzles is to rotate obliquely upward in the horizontal direction.

[0029] Preferred options also include:

[0030] A protective box, wherein the mixing box is located inside the protective box, and a heating element is provided inside the protective box and on the outer surface of the mixing box to heat the raw materials inside the mixing chamber;

[0031] A fixed platform, one side of which is fixedly connected to the inner wall of the placement cavity, and the bottom of the protective box is fixedly connected to the top of the fixed platform;

[0032] The pump body is fixedly connected to the bottom of the placement chamber. The input end of the pump body is provided with a bottom pipe. The bottom of the mixing chamber is provided with a splicing hole. The other end of the bottom pipe passes through the fixed platform and the protective box and is connected to the bottom of the splicing hole.

[0033] Preferably, it further includes: a mounting bracket, which is fixedly connected to the inner wall of the placement cavity, and an electrical control box is provided on the top of the mounting bracket, which supplies power to each electrical component;

[0034] A numerical control screen is fixedly installed on one side of the cabinet and is electrically connected to various electrical components.

[0035] An emergency button is fixedly connected to one side of the cabinet and electrically controls the system switch.

[0036] Preferred options also include:

[0037] The filter is fixedly connected to the bottom of the fixed platform. The input end of the filter is connected to the output end of the pump body through a connecting pipe, and the output end of the filter is connected to the input end of the wafer cleaning equipment through a liquid outlet pipe.

[0038] A collection box is fixedly connected to the bottom of the placement chamber. A return pipe is connected to the top of the collection box. A discharge hole is opened at the bottom of the mixing chamber. The other end of the return pipe passes through the fixed platform and the protective box and is connected to the bottom of the discharge hole.

[0039] A discharge solenoid valve is installed on the inner wall of the bottom pipe and the return pipe and adjusts the internal liquid flow rate.

[0040] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0041] 1. In this invention, the tilt angle of the high-pressure nozzle is adjusted according to the flow rate of the raw material inside the raw material pipe to ensure that the impact force of the raw material sprayed by the high-pressure nozzle reaches the side wall of the mixing chamber meets the requirements, thereby avoiding the high impact between the raw material and the side wall of the mixing chamber and causing damage to the side wall of the mixing chamber and the structure of the raw material itself.

[0042] 2. In this invention, the more raw material there is, the larger the vertical downward flow area of ​​the raw material along the side wall of the mixing chamber. This ensures that the raw material can reach the curved end evenly and stably and be guided to flow horizontally, avoiding a large amount of raw material from entering the cleaning liquid and causing fluctuations in the upper liquid surface. It also reduces the impact force between the raw material and the cleaning liquid and avoids generating more bubbles, thereby improving the detection accuracy of the liquid level sensor.

[0043] 3. In this invention, the distance between the elastic guide plate and the curved surface decreases as the amount of raw materials increases, thereby ensuring that the raw materials change from horizontal left-right flow to horizontal front-back flow under the guidance of the elastic guide plate, further improving the mixing and blending effect of each raw material, and avoiding the accumulation and sedimentation of raw materials for a long time, which would affect the mixing and blending effect.

[0044] 4. In this invention, the tilt angle of the elastic guide plate is adjusted accordingly with the change of raw material density, and the tilt angle of the high-pressure nozzle is constantly changing, which effectively improves the uniformity of raw material distribution and mixing effect in the cleaning liquid. At the same time, it can also flush and scrape the inside of the mixing chamber to clean it, avoiding any impact on the subsequent mixing of raw materials. Attached Figure Description

[0045] Figure 1 This is a frontal three-dimensional structural diagram of the mixing system of the present invention;

[0046] Figure 2 This is a frontal perspective three-dimensional structural diagram of the mixing box of the present invention;

[0047] Figure 3 This is a three-dimensional structural diagram of the mixing box of the present invention from another perspective;

[0048] Figure 4 For the present invention Figure 3 Rear view of the internal three-dimensional structure of the mixing box;

[0049] Figure 5 For the present invention Figure 3 Right view of the internal three-dimensional structure of the mixing box;

[0050] Figure 6 for Figure 5 Enlarged view of point A in the middle;

[0051] Figure 7 for Figure 5 Enlarged view of point B in the middle;

[0052] Figure 8 For the present invention Figure 3 Right sectional view of the central distribution box;

[0053] Figure 9 This is a schematic diagram of the explosion at the location of the high-pressure nozzle of the present invention;

[0054] Figure 10 This is an exploded view of the location of the elastic guide piece of the present invention.

[0055] In the diagram: 1. Cabinet; 2. Placement cavity; 3. Mounting bracket; 4. CNC screen; 5. Emergency button; 6. Electrical control box; 7. Pump body; 8. Filter; 9. Protection box; 10. Collection box; 11. Bottom pipe; 12. Return pipe; 13. Connecting pipe; 14. Discharge pipe; 15. Mixing box; 16. Mixing chamber; 17. Curved surface; 18. Raw material pipe; 19. Flow meter; 20. Feed solenoid valve; 21. Rotating shaft; 22. First telescopic part; 23. High-pressure nozzle; 24. Drain pipe; 25. Second telescopic part; 26. Conical rod; 27. Elastic guide plate; 28. Liquid level sensor; 29. ​​Splicing hole; 30. Discharge hole; 31. Discharge solenoid valve; 32. Fixed platform. Detailed Implementation

[0056] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0057] like Figure 1 - Figure 10 As shown, a wafer cleaning solution preparation system is provided. The preparation system includes a cabinet 1, with a placement cavity 2 inside the cabinet 1. The placement cavity 2 holds various components of the wafer cleaning solution preparation system. A mixing box 15 is provided inside the placement cavity 2. A mixing chamber 16 is provided inside the mixing box 15 for mixing various raw materials. Different liquid raw materials are prepared inside the mixing chamber 16.

[0058] The mixing chamber 15 includes: raw material tubes 18, multiple raw material tubes 18 are inserted into the mixing chamber 16 and transport different raw materials; the end of the raw material tube 18 away from the mixing chamber 16 is connected to each raw material tank through a high-pressure pump. Specifically, the wafer cleaning solution is mainly SC-1, the main raw materials of which are liquid deionized water, ammonia water and hydrogen peroxide, etc. Hereinafter, each liquid component will be referred to as a raw material. The high-pressure pump is started and the raw materials in each raw material tank are introduced into the raw material tube 18.

[0059] It also includes: a protective box 9, a mixing box 15 located inside the protective box 9, a heating element located inside the protective box 9 and on the outer surface of the mixing box 15, which heats the raw materials inside the mixing chamber 16; the protective box 9 not only provides protection for the mixing box 15 inside, but the heating element can also regulate the temperature of the raw materials inside the mixing box 15, thereby improving the mixing efficiency and quality of the cleaning solution; a fixing platform 32, one side of the fixing platform 32 is fixedly connected to the inner wall of the placement chamber 2, and the bottom of the protective box 9 is fixedly connected to the top of the fixing platform 32; the fixing platform 32 supports and fixes the protective box 9; and a mounting frame 3, which is fixedly connected to the inner wall of the placement chamber 2, and an electrical control box 6 is located on the top of the mounting frame 3, which supplies power to various electrical components.

[0060] Cabinet 1 also includes: a CNC screen 4, which is fixedly installed on one side of cabinet 1 and electrically connected to various electrical components; the CNC screen 4 is designed to facilitate fully automatic or manual operation and ensure adjustment accuracy; an emergency button 5, which is fixedly connected to one side of cabinet 1 and electrically controls the emergency switch of the system; when an emergency stop is required, pressing the emergency button 5 will stop all electrical components to prevent damage to subsequent work; and other CNC buttons on one side of cabinet 1, all of which are existing technologies and will not be described in detail here.

[0061] The placement chamber 2 also includes a pump body 7, which is fixedly connected to the bottom of the placement chamber 2. The pump body 7 has a suction function and can draw out the cleaning fluid inside the mixing chamber 16. The input end of the pump body 7 is provided with a bottom pipe 11. The bottom of the mixing chamber 16 is provided with a splicing hole 29. The other end of the bottom pipe 11 passes through the fixed platform 32 and the protective box 9 and is connected to the bottom of the splicing hole 29. When the cleaning fluid inside the mixing chamber 16 is prepared, the pump body 7 is started and applies suction force to the bottom pipe 11. The cleaning fluid inside the mixing chamber 16 enters the bottom pipe 11 along the splicing hole 29 and finally flows into the pump body 7 along the bottom pipe 11.

[0062] Filter 8 is fixedly connected below the fixed platform 32. Filter 8 mainly performs the final filtration of the cleaning solution to prevent impurities in the cleaning solution from reducing the subsequent cleaning effect on the wafer. The input end of filter 8 is connected to the output end of pump body 7 through connecting pipe 13, and the output end of filter 8 is connected to the input end of wafer cleaning equipment through outlet pipe 14. Pump body 7 works continuously and puts the cleaning solution into the filter 8 through connecting pipe 13. At the same time, the impurities in the cleaning solution are filtered out by the filtering action of filter 8. Finally, the cleaning solution reaches the wafer cleaning equipment end through outlet pipe 14 and rinses the wafer.

[0063] The collection box 10 is fixedly connected to the bottom of the placement chamber 2. The collection box 10 recovers excess raw materials or cleaning fluid to avoid affecting the quality of the cleaning fluid. The top of the collection box 10 is connected to the return pipe 12. The bottom of the mixing chamber 16 has a discharge hole 30. The other end of the return pipe 12 passes through the fixed platform 32 and the protective box 9 and is connected to the bottom of the discharge hole 30. Thus, excess cleaning fluid inside the mixing chamber 16 can enter the collection box 10 for recovery along the return pipe 12. At the same time, one end of each raw material pipe 18 is connected to the collection box 10 through a pipe. Excess raw materials inside the raw material pipe 18 can also enter the collection box 10 for recovery through the pipe. This part is existing technology and will not be described in detail here. The discharge solenoid valve 31 is installed on the inner wall of the bottom pipe 11 and the return pipe 12 and adjusts the internal liquid flow value. The discharge solenoid valve 31 adjusts the opening and closing of the bottom pipe 11 and the return pipe 12 to achieve precise adjustment of the cleaning fluid flow.

[0064] The mixing chamber 15 also includes high-pressure nozzles 23. Multiple high-pressure nozzles 23 are movably connected below the raw material pipe 18. When the raw material flow rate increases, the high-pressure nozzles 23 tilt upwards, increasing the distance between them and the inner wall of the mixing chamber 16. The raw material inside the raw material pipe 18 flows downwards into the high-pressure nozzles 23 and directly along the nozzles to the inner wall of the mixing chamber 16. The raw material then flows vertically downwards along the inner wall of the mixing chamber 16, thus achieving not only the mixing and stirring of multiple raw materials but also ensuring that the raw materials do not cause impact fluctuations on the surface of the cleaning fluid inside the mixing chamber 16, affecting the detection accuracy. Furthermore, it can prevent the raw materials from directly impacting and contacting the cleaning fluid inside the mixing chamber 16, thus avoiding excessive bubbles that could affect the quality of the cleaning fluid. Flow meters 19, multiple flow meters 19 are all installed inside the raw material pipe 18 and located above the mixing tank 15. The flow meters 19 are used to detect the flow rate of the raw materials inside the raw material pipe 18. By using the flow meters 19 to detect the flow rate of the raw materials inside the raw material pipe 18, the tilt angle of the high-pressure nozzle 23 is adjusted accordingly, further ensuring that the flow rate of the raw materials sprayed from the high-pressure nozzle 23 meets the requirements, thus preventing the raw materials from directly entering the mixing chamber 16 and causing fluctuations in the liquid surface and generating excessive bubbles.

[0065] Feed solenoid valves 20, multiple feed solenoid valves 20 are all located inside the raw material pipe 18 and above the flow meter 19. The feed solenoid valves 20 regulate the raw material flow rate inside the raw material pipe 18. By regulating the raw material flow rate inside the raw material pipe 18 with the feed solenoid valves 20, the mixing accuracy and preparation quality of the cleaning fluid inside the mixing chamber 16 are improved. Liquid level sensors 28, multiple liquid level sensors 28 are fixedly connected to the top of the mixing chamber 16 and detect the liquid level inside the mixing chamber 16. The liquid level sensors 28 detect the height of the cleaning fluid inside the mixing chamber 16 in real time and use the cleaning fluid to rinse and clean the wafer accordingly.

[0066] The curved surface 17 is located at the end corner of the mixing chamber 16 near the high-pressure nozzle 23. The raw material flows downward along the side wall of the mixing chamber 16 and enters the interior of the mixing chamber 16 under the guidance of the curved surface 17. The curved surface 17 facilitates the sliding of the raw material into the cleaning liquid inside the mixing chamber 16, effectively preventing the cleaning liquid from directly impacting the end corner of the mixing chamber 16 and dispersing to form bubbles, thereby improving the cleaning quality and mixing effect.

[0067] The mixing chamber 15 also includes a first telescopic part 22. One end of the first telescopic part 22 is movably connected to the side wall of the raw material pipe 18, and the other end of the first telescopic part 22 is movably connected to the top of the high-pressure nozzle 23. Therefore, when the output end of the first telescopic part 22 extends, it causes the high-pressure nozzle 23 to tilt downward at an increased angle. The tilt angle of the high-pressure nozzle 23 is adjusted by means of the first telescopic part 22, and the distance between the end of the high-pressure nozzle 23 and the side wall of the mixing chamber 16 is adjusted accordingly, thereby ensuring the mixing effect of the raw material sprayed by the high-pressure nozzle 23 inside the mixing chamber 16.

[0068] A rotating shaft 21 is movably connected below the raw material pipe 18, and the other end of the rotating shaft 21 is fixedly connected to the end of the high-pressure nozzle 23. The high-pressure nozzle 23 can drive the rotating shaft 21 to rotate below the raw material pipe 18, thereby changing the tilt angle of the high-pressure nozzle 23. The guide pipe 24 is flexible, so that the rotation of the high-pressure nozzle 23 will not obstruct the normal flow of raw materials inside the guide pipe 24. One end of the guide pipe 24 passes through the raw material pipe 18 and is connected to its interior, and the other end of the guide pipe 24 passes through the high-pressure nozzle 23 and is connected to its interior. The raw materials inside the raw material pipe 18 enter the interior of the high-pressure nozzle 23 along the guide pipe 24 and are discharged to the side wall of the mixing chamber 16, thereby realizing the normal flow of raw materials inside the raw material pipe 18 and the high-pressure nozzle 23.

[0069] Elastic guide plates 27 are movably connected to the inner wall of the mixing chamber 16 on the side away from the curved surface 17. The elastic guide plates 27 are elastic and match the bottom of the mixing chamber 16. Therefore, the elastic guide plates 27 can elastically block the raw materials entering the mixing chamber 16, causing them to flow to both sides, further improving the mixing and blending effect of raw materials at different positions. When the high-pressure nozzle 23 is tilted upward, it indicates that the amount of raw materials at that position has increased. The distance between the elastic guide plates 27 and the curved surface 17 decreases and the range of guiding the raw materials to both sides increases. This allows the raw materials to be fully blended and mixed with other raw materials inside the mixing chamber 16, improving the blending quality.

[0070] The mixing chamber 15 also includes: a second telescopic section 25, multiple second telescopic sections 25 are fixedly connected to the inner wall of the mixing chamber 16, and two second telescopic sections 25 are arranged in the same vertical direction; the two second telescopic sections 25 can not only extend to the same length, but also extend to different lengths, thereby not only realizing the adjustment of the distance of the elastic guide plate 27, but also realizing the adjustment of the upward flow velocity of the raw material according to the density of the raw material, ensuring that the raw material is fully and effectively mixed and blended; and a tapered rod 26, the side wall of which is movably connected to the output end of the second telescopic section 25, so that when the output end of the second telescopic section 25 extends, it synchronously drives the tapered rod 26. Moving towards the end closer to the curved surface 17, the tapered rod 26 has a tapered structure at the end closer to the curved surface 17. The end of the tapered rod 26 is in contact with the inner wall of the elastic guide plate 27. With the help of the tapered structure of the tapered rod 26 and the elastic guide plate 27, the raw materials are diverted to both sides, improving the mixing and blending effect between multiple raw materials. When the output end of the second telescopic part 25 extends and drives the elastic guide plate 27 to elastically deform towards the end closer to the curved surface 17 through the tapered rod 26, the distance between the elastic guide plate 27 and the curved surface 17 decreases. Then, the raw materials flow and come into contact with the elastic guide plate 27, flow to both sides, and the mixing efficiency with other raw materials is improved.

[0071] The curved surface 17 is smooth and arc-shapedly connected to the side wall and inner bottom of the mixing chamber 16. The curved surface 17 further improves the guiding and turning effect of the raw material at the end corner of the mixing chamber 16. The curved surface 17 guides the raw material flowing vertically downward on the inner wall of the mixing chamber 16 to flow horizontally along the inner bottom of the mixing chamber 16. This not only reduces the impact and foaming of the raw material with the cleaning liquid inside the mixing chamber 16, but also ensures the stability of the liquid surface of the cleaning liquid inside the mixing chamber 16. The upper part of the elastic guide plate 27 corresponds to the upper part of the curved surface 17, thus ensuring that the raw material can be guided and diverted by the elastic guide plate 27 after passing through the curved surface 17. The second telescopic part 25 and the conical rod 26 are both located inside the elastic guide plate 27. The second telescopic part 25 will not come into contact with the cleaning liquid inside the mixing chamber 16. The end of the elastic guide plate 27 is fixedly connected to the side wall of the mixing chamber 16 away from the curved surface 17. Therefore, the interior of the elastic guide plate 27 remains sealed when it undergoes elastic deformation.

[0072] The horizontal distances between the multiple raw material pipes 18 and the sidewalls of the mixing chamber 16 are all equal, so the rotation process of the multiple raw material pipes 18 is the same. The end of the high-pressure nozzle 23 corresponds to the sidewall of the mixing chamber 16. The raw material sprayed by the high-pressure nozzle 23 directly acts on the inner wall of the mixing chamber 16 and blocks the raw material, preventing it from directly entering the cleaning liquid inside the mixing chamber 16 vertically downwards and generating bubbles. The sidewall of the mixing chamber 16 is provided with an impact-resistant layer that matches the rotation angle of the high-pressure nozzle 23. This impact-resistant layer prevents the raw material sprayed by the high-pressure nozzle 23 from acting on the inner wall of the mixing chamber 16 for a long time and reducing its own strength. The positions of the multiple high-pressure nozzles 23 correspond to the positions of the conical rod 26. The raw material sprayed by the high-pressure nozzle 23 reaches the elastic guide plate 27 after being guided along the sidewall of the mixing chamber 16 and the curved surface 17 for further guidance. The high-pressure nozzle 23 rotates obliquely upwards in the horizontal direction. Therefore, when the flow rate of the raw material ejected by the high-pressure nozzle 23 increases, the high-pressure nozzle 23 rotates upwards, thus increasing the distance between the high-pressure nozzle 23 and the side wall of the mixing chamber 16. The flow velocity of the raw material when it reaches the side wall of the mixing chamber 16 decreases, thereby effectively reducing the impact of the high-pressure nozzle 23 on the side wall of the mixing chamber 16 and its impact on the structural strength of the raw material and the side wall of the mixing chamber 16. Furthermore, due to the increased height of the raw material reaching the side wall of the mixing chamber 16, the downward flow distance along the side wall of the mixing chamber 16 under the action of the raw material's own gravity increases, thereby ensuring that the flow velocity and flow rate of the raw material when it enters the cleaning liquid meet the requirements. This effectively avoids the impact between the raw material and the cleaning liquid and the resulting fluctuations in the liquid surface above the cleaning liquid, which would affect the accuracy of the liquid level sensor 28 in detecting the liquid level of the cleaning liquid inside the mixing chamber 16.

[0073] Meanwhile, in actual use, a stirring section can be set inside the mixing chamber 16, and the stirring section is staggered with the raw material pipe 18, high-pressure nozzle 23 and elastic guide plate 27. Therefore, when the stirring section rotates, it can stir and mix the cleaning liquid inside the mixing chamber 16, further improving the raw material preparation effect. In actual use, two mixing tanks 15 can be set, and both mixing tanks 15 are connected to the pump body 7 through the bottom pipe 11. In this way, when the pump body 7 is working and the cleaning liquid inside one mixing tank 15 is being pumped and discharged, the other mixing tank 15 is preparing the required raw materials, thereby achieving uninterrupted wafer cleaning. This part is still existing technology and can be added according to actual needs, so it will not be described in detail here.

[0074] Therefore, in the aforementioned wafer cleaning fluid preparation system, the liquid level sensor 28 is used to monitor the liquid level of the cleaning fluid inside the mixing chamber 16 in real time. However, if the raw materials continuously impact the mixing chamber 16 vertically downwards and prepare the cleaning fluid, the liquid level of the cleaning fluid will fluctuate accordingly, affecting the detection accuracy of the liquid level sensor 28. Furthermore, the impact flow of the raw materials can easily generate bubbles, which not only reduce the quality of the cleaning fluid but also affect the detection accuracy of the liquid level sensor 28. Additionally, when the high-pressure nozzle 23 impacts the inner wall of the mixing chamber 16 for an extended period, it can easily damage the inner wall structure of the mixing chamber 16 and the structure of the raw materials themselves, thus failing to guarantee the effective preparation of the cleaning fluid. Moreover, if the raw materials inside the high-pressure nozzle 23... When the flow rate changes, the impact force between the high-pressure nozzle 23 and the side wall of the mixing chamber 16 changes accordingly. The bubbles generated when the raw material is blocked and the wave force of the downward flow on the cleaning fluid change, thus making it impossible to achieve a stable liquid surface and a bubble-free effect. Similarly, if the amount of raw material sprayed by the high-pressure nozzle 23 changes, the flow rate and flow volume of the raw material in the cleaning fluid will change accordingly, which may cause some raw materials to not be fully mixed and modulated, reducing the quality of the subsequent cleaning fluid. When the density of the raw material changes, the raw materials will accumulate and settle at different positions in the cleaning fluid, which will cause the raw materials to not mix and affect the mixing effect of the cleaning fluid. After the mixing is completed, the impurities of the raw materials will accumulate on the inner wall of the mixing chamber 16 and affect the mixing and blending of subsequent raw materials.

[0075] To address the aforementioned issues, when the wafer cleaning solution preparation system requires preparation of the cleaning solution during actual use, the CNC screen 4 activates the automatic mode, and the electrical control box 6 supplies power to all components. The raw materials from multiple material tanks, such as deionized water, ammonia, and hydrogen peroxide, enter the material pipe 18 under the suction of the high-pressure pump. Simultaneously, the feed solenoid valve 20 opens, and the flow meter 19 detects the flow rate of the raw materials inside the material pipe 18. The opening degree of each feed solenoid valve 20 is adjusted according to the SC-1 cleaning solution formula, ensuring that the flow rate from the material pipe 18 along the guide pipe 24 to the high-pressure nozzle 23 meets the preparation requirements, thus improving the subsequent preparation quality.

[0076] Then, the high-pressure nozzle 23 is positioned horizontally and sprays the raw material horizontally towards the side wall of the mixing chamber 16. The raw material collides with the side wall of the mixing chamber 16, reducing its flow velocity. Then, under its own gravity, the raw material flows downwards along the side wall of the mixing chamber 16. When the raw material reaches the curved surface 17, the smoothness and guiding properties of the curved surface 17 cause the raw material to change from a vertical downward direction along the side wall of the mixing chamber 16 to a horizontal left-right direction, gradually flowing into the mixing chamber 16 to mix and blend with other raw materials. Figure 8The direction of the dotted line shown is the flow direction of the raw material. With the help of the flow of the raw material itself and the guidance of the curved surface 17, and with the flow of the raw material on the side wall of the mixing chamber 16, the raw material is prevented from falling directly down into the inner wall of the mixing chamber 16, which would cause bubbles or large liquid surface fluctuations and reduce the accuracy of the liquid level value detected by the subsequent liquid level sensor 28.

[0077] Furthermore, when the raw materials flow horizontally in the left and right directions under the guidance of the curved surface 17 and reach the end of the elastic guide plate 27, the raw materials and the end of the elastic guide plate 27 impact each other. In conjunction with the conical structure of the conical rod 26, the raw materials change from flowing in the left and right direction to flowing in the front and back direction inside the mixing chamber 16. Multiple raw materials come into contact with each other in the front and back direction and mix, which effectively improves the mixing quality and efficiency of the raw materials and avoids the raw materials from standing still in their respective areas for a long time and reducing the mixing effect.

[0078] As multiple raw materials continuously flow vertically downwards along the sidewall of the mixing chamber 16, they enter the position below the cleaning liquid under the action of gravity along the curved surface 17 and move horizontally. This results in minimal fluctuation of the liquid surface above the cleaning liquid caused by the raw materials. The liquid level sensor 28 detects that the liquid level below is stable. Furthermore, the stable flow of the raw materials and the small number of bubbles generated during the impact of the cleaning liquid, along with the fact that the bubbles are located far from the detection position of the liquid level sensor 28, further prevent the flow of bubbles and large fluctuations in the liquid surface from affecting the liquid level sensor 28's detection of the liquid surface above the cleaning liquid. This not only effectively improves the mixing efficiency and effect of the cleaning liquid but also ensures the accuracy of the liquid level sensor 28 in detecting the liquid level, thereby improving the subsequent wafer cleaning effect.

[0079] Meanwhile, since the flow rates of the raw materials inside the multiple raw material pipes 18 are different, the corresponding flow velocities of the raw materials ejected from the high-pressure nozzles 23 are different. That is, when the flow rate detected by the flow meter 19 increases, it indicates that the flow rate of the raw materials inside the raw material pipe 18 has increased, and the flow velocity of the raw materials ejected along the high-pressure nozzles 23 has increased. In order to avoid excessive impact force on the side wall of the mixing chamber 16 caused by this larger flow velocity and resulting in structural damage, the CNC screen 4 controls the first telescopic part 22 to start and the output end to shorten. The first telescopic part 22 drives the high-pressure nozzles 23 to tilt upward in the horizontal direction, and the tilt angle gradually increases. According to the hypotenuse principle, As the distance between the end of the high-pressure nozzle 23 and the inner wall of the mixing chamber 16 continuously increases, the flow velocity of the raw material sprayed from the high-pressure nozzle 23 decreases when it reaches the side wall of the mixing chamber 16 due to the increased distance. This ensures that the flow velocity of the raw material sprayed from the high-pressure nozzle 23 meets the requirements when it reaches the side wall of the mixing chamber 16, thus meeting the impact force between the raw material and the side wall of the mixing chamber 16. This avoids excessive impact force when the raw material flows too fast and collides with the side wall of the mixing chamber 16, which could damage the structure of the side wall of the mixing chamber 16 and the raw material itself. This effectively improves the quality of the subsequent raw material preparation cleaning solution and meets the cleaning requirements of the cleaning solution.

[0080] Furthermore, when the high-pressure nozzle 23 rotates upward, the amount of raw material sprayed by the high-pressure nozzle 23 increases, and the height of the raw material when it reaches the side wall of the mixing chamber 16 increases. Therefore, the distance the raw material flows downward along the side wall of the mixing chamber 16 under its own gravity increases, further ensuring that the raw material enters the cleaning liquid evenly and stably along the side wall of the mixing chamber 16 under its own gravity. That is, the amount of raw material entering the cleaning liquid remains stable, avoiding a large amount of raw material from entering the cleaning liquid in a concentrated manner and causing shaking inside the cleaning liquid under the guidance of the curved surface 17. This effectively ensures the stability of the liquid surface above the cleaning liquid and improves the detection accuracy of the liquid level sensor 28 on the liquid surface above the cleaning liquid.

[0081] When the raw material changes from a vertical downward direction to a horizontal left-right direction under the guidance of the curved surface 17, the amount of raw material at this position increases. The CNC screen 4 then controls the second telescopic part 25 at this position to start and extend its output end. The second telescopic part 25 drives the conical rod 26 to move closer to the curved surface 17. The conical rod 26 drives the elastic guide plate 27 to undergo elastic deformation closer to the curved surface 17. The blocking area of ​​the elastic guide plate 27 on the raw material increases. Under the conical guidance of the elastic guide plate 27, the flow of the raw material from the horizontal left-right direction to the front-back direction increases. This ensures that the larger amount of raw material can flow and mix fully and effectively with the other raw materials, improving the mixing effect between the various raw materials, meeting the actual mixing needs, and correspondingly preventing the raw material from colliding with the side wall of the mixing chamber 16 away from the curved surface 17 when the amount of raw material increases and continuing to flow upward, causing fluctuations in the surface of the cleaning fluid. This effectively improves the surface stability of the cleaning fluid and the accuracy of the liquid level sensor 28 in detecting the liquid level.

[0082] Furthermore, the tilt direction and angle of the conical rod 26 can be adjusted according to the density of the raw materials themselves, and the materials can be fully and effectively mixed and blended under the guidance of the curved surface 17. Specifically, since deionized water has the largest volume and fills the mixing chamber 16 as the base liquid, when the density of other raw materials is greater than that of deionized water (for example, hydrogen peroxide has a slightly higher density than deionized water), the raw material will settle below the cleaning liquid under its own density after entering the cleaning liquid under the guidance of the curved surface 17, which will affect the mixing effect of the raw materials. At this time, the CNC screen 4 controls the second telescopic part 25 at the lower end of the conical rod 26 to start and extend the output end, while the extension length of the second telescopic part 25 at the upper end remains unchanged. The movable connection between the two telescopic parts 25 and the tapered rod 26 causes the tapered rod 26 to tilt. The tilting direction of the tapered rod 26 is such that the distance between the bottom and the curved surface 17 is less than the distance between the top and the curved surface 17. The tapered rod 26 correspondingly causes the elastic guide plate 27 to tilt. When the raw material flows horizontally in the left and right direction under the guidance of the curved surface 17, it collides and splits with the elastic guide plate 27. Thus, the raw material can not only be guided to flow horizontally in the left and right direction, but also be guided upward under the tilting setting of the elastic guide plate 27, further increasing the mixing and adjustment area of ​​the raw material. When the raw material leaves the elastic guide plate 27, it continuously settles downward under its own density, ensuring the mixing and modulation effect of the raw material with other raw materials.

[0083] Meanwhile, following the above process, the flow rates of different raw materials inside the raw material pipe 18 are different, and the flow rate of the same raw material inside the raw material pipe 18 will also change at different times. The flow rate value detected by the flow meter 19 changes, and then the tilt angle of the high-pressure nozzle 23 is adjusted accordingly according to the above process. The impact position of the high-pressure nozzle 23 on the side wall of the mixing chamber 16 changes accordingly, effectively avoiding the high-pressure nozzle 23 impacting the same position on the side wall of the mixing chamber 16 for a long time and causing damage to the inner wall structure of the mixing chamber 16, thereby improving the stability and durability of the mixing chamber 16.

[0084] When the level sensor 28 detects that the liquid level above the cleaning fluid in the mixing chamber 16 reaches the required height, it indicates that the amount of cleaning fluid in the mixing chamber 16 meets the requirements. At this time, the feed solenoid valve 20 is closed, and no more raw materials are introduced into the raw material pipe 18. The flow rate detected by the flow meter 19 is zero. When the cleaning fluid is needed to clean the wafer, the pump body 7 is started and a suction force is applied to the mixing chamber 16 through the bottom pipe 11. The cleaning fluid in the mixing chamber 16 enters the pump body 7 along the bottom pipe 11 and enters the filter 8 from the pump body 7 along the connecting pipe 13. After the filter 8 performs the required filtration of the cleaning fluid, it finally flows along the outlet pipe 14 to the wafer cleaning device and performs the required cleaning on the wafer.

[0085] After the cleaning fluid inside the mixing chamber 16 is discharged, the above process is repeated to mix and blend the various raw materials. When the cleaning is completed and the inside of the mixing chamber 16 needs to be rinsed, deionized water is introduced into the raw material pipe 18 and sprayed out along the high-pressure nozzle 23 to rinse and clean the inner wall of the mixing chamber 16. At the same time, the high-pressure nozzle 23 is continuously tilted and rotated to increase the cleaning area of ​​the side wall of the mixing chamber 16. During the rinsing process, the elastic guide plate 27 guides the inner wall of the mixing chamber 16 to achieve all-round cleaning. The elastic guide plate 27 moves at the bottom of the mixing chamber 16 and scrapes and cleans accordingly, preventing raw materials from sticking to the inner wall of the mixing chamber 16 and affecting subsequent blending. At the same time, the discharge solenoid valve 31 is opened, and the deionized water inside the mixing chamber 16 enters the collection box 10 along the return pipe 12 for recycling. After the cleaning is completed, the discharge solenoid valve 31 is closed, and the above process is repeated to mix and blend the subsequent raw materials.

[0086] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.

[0087] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A wafer cleaning solution preparation system, comprising a cabinet (1), wherein a placement cavity (2) is provided inside the cabinet (1), a mixing box (15) is provided inside the placement cavity (2), and a mixing chamber (16) is provided inside the mixing box (15) for mixing various raw materials, characterized in that, The mixing box (15) includes: raw material pipes (18), and multiple raw material pipes (18) are inserted into the mixing chamber (16) to transport different raw materials; High-pressure nozzles (23), multiple high-pressure nozzles (23) are movably connected below the raw material pipe (18). When the raw material flow rate increases, the high-pressure nozzles (23) tilt upward and the distance between them and the inner wall of the mixing chamber (16) increases. The curved surface (17) is located at the end corner of the mixing chamber (16) near the high-pressure nozzle (23). The raw material flows downward along the side wall of the mixing chamber (16) and enters the interior of the mixing chamber (16) under the guidance of the curved surface (17). Elastic guide plate (27), multiple elastic guide plates (27) are movably connected to the inner wall of the mixing chamber (16) away from the curved surface (17). When the high pressure nozzle (23) is tilted upward, the distance between the elastic guide plate (27) and the curved surface (17) decreases and the range of guiding the raw material to both sides increases. The mixing box (15) also includes a second telescopic part (25), and multiple second telescopic parts (25) are fixedly connected to the inner wall of the mixing chamber (16), and two second telescopic parts (25) are arranged in the same vertical direction. A tapered rod (26) has its sidewall movably connected to the output end of the second telescopic part (25). The end of the tapered rod (26) near the curved surface (17) is tapered. The end of the tapered rod (26) is pressed against the inner wall of the elastic guide plate (27). When the output end of the second telescopic part (25) extends, the tapered rod (26) drives the elastic guide plate (27) to elastically deform towards the end near the curved surface (17). The curved surface (17) is smooth and arc-shapedly connected to the side wall and inner bottom of the mixing chamber (16). The curved surface (17) guides the raw material flowing vertically downward in the inner wall of the mixing chamber (16) to flow horizontally along the inner bottom of the mixing chamber (16). The elastic guide plate (27) is elastic and matches the inner bottom of the mixing chamber (16) below. The upper part of the elastic guide plate (27) corresponds to the upper part of the curved surface (17). The second telescopic part (25) and the tapered rod (26) are both located inside the elastic guide plate (27). The end of the elastic guide plate (27) is fixedly connected to the side wall of the mixing chamber (16) away from the curved surface (17).

2. The wafer cleaning solution preparation system according to claim 1, characterized in that, The mixing box (15) also includes a flow meter (19). Multiple flow meters (19) are installed inside the raw material pipe (18) and located above the mixing box (15). The flow meters (19) are used to detect the flow rate of the raw material inside the raw material pipe (18). Feed solenoid valve (20), multiple feed solenoid valves (20) are disposed inside the raw material pipe (18) and above the flow meter (19), the feed solenoid valve (20) adjusts the raw material flow rate inside the raw material pipe (18); Liquid level sensor (28), multiple liquid level sensors (28) are fixedly connected to the top of the mixing chamber (16) and detect the liquid level value inside the mixing chamber (16).

3. The wafer cleaning solution preparation system according to claim 1, characterized in that, The mixing box (15) also includes: a first telescopic part (22), one end of the first telescopic part (22) is movably connected to the side wall of the raw material pipe (18), and the other end of the first telescopic part (22) is movably connected to the top of the high pressure nozzle (23). The output end of the first telescopic part (22) is shortened and drives the high pressure nozzle (23) to increase the upward tilt angle. A rotating shaft (21) is movably connected to the bottom of the raw material pipe (18), and the other end of the rotating shaft (21) is fixedly connected to the end of the high-pressure nozzle (23); The guide tube (24) has one end passing through the raw material tube (18) and communicating with its interior, and the other end passing through the high-pressure nozzle (23) and communicating with its interior. The guide tube (24) is flexible. The raw material inside the raw material tube (18) enters the high-pressure nozzle (23) along the guide tube (24) and is discharged to the side wall of the mixing chamber (16).

4. The wafer cleaning solution preparation system according to claim 1, characterized in that, The horizontal distances between the multiple raw material pipes (18) and the sidewall of the mixing chamber (16) are all equal, and the end of the high-pressure nozzle (23) corresponds to the sidewall of the mixing chamber (16). The sidewall of the mixing chamber (16) is provided with an impact-resistant layer and matches the rotation angle of the high-pressure nozzle (23). The positions of the multiple high-pressure nozzles (23) correspond to the positions of the conical rod (26). The range of motion of the high-pressure nozzle (23) is to rotate obliquely upward in the horizontal direction.

5. The wafer cleaning solution preparation system according to claim 1, characterized in that, Also includes: The protective box (9) and the mixing box (15) are located inside the protective box (9). The protective box (9) is equipped with a heating element on the outer surface of the mixing box (15) to heat the raw materials inside the mixing chamber (16). A fixed platform (32) is fixedly connected to the inner wall of the placement cavity (2) on one side, and the bottom of the protective box (9) is fixedly connected to the top of the fixed platform (32). Pump body (7), the pump body (7) is fixedly connected to the bottom of the placement cavity (2), the input end of the pump body (7) is provided with a bottom pipe (11), the bottom of the mixing cavity (16) is provided with a splicing hole (29), the other end of the bottom pipe (11) passes through the fixed platform (32), the protective box (9) and is connected to the bottom of the splicing hole (29).

6. The wafer cleaning solution preparation system according to claim 1, characterized in that, Also includes: Mounting bracket (3), which is fixedly connected to the inner wall of the placement cavity (2), and an electrical control box (6) is provided on the top of the mounting bracket (3), which supplies power to each electrical component; The CNC screen (4) is fixedly installed on one side of the cabinet (1) and is electrically connected to various electrical components. Emergency button (5), which is fixedly connected to one side of cabinet (1), and the emergency button (5) is an electrical control system switch.

7. The wafer cleaning solution preparation system according to claim 5, characterized in that, Also includes: The filter (8) is fixedly connected to the bottom of the fixed platform (32). The input end of the filter (8) is connected to the output end of the pump body (7) through the connecting pipe (13). The output end of the filter (8) is connected to the input end of the wafer cleaning equipment through the liquid outlet pipe (14). The collection box (10) is fixedly connected to the bottom of the placement cavity (2). The top of the collection box (10) is connected to the return pipe (12). The bottom of the mixing cavity (16) is provided with a discharge hole (30). The other end of the return pipe (12) passes through the fixed platform (32) and the protective box (9) and is connected to the bottom of the discharge hole (30). The discharge solenoid valve (31) is installed on the inner wall of the bottom pipe (11) and the return pipe (12) and adjusts the internal liquid flow rate.

Images