Filling adhesive for eliminating pinholes and hillocks, method for preparing the same, and semiconductor chip
By using a specific ratio of filler components, the surface and interfacial tension of the adhesive is reduced, the leveling window period is extended, and the problems of porosity and blooming during the heating and curing process of the filler adhesive are solved, thereby improving the reliability of the encapsulation.
Patent Information
- Application Number
- CN202511233980.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2025-09-01
- Publication Date
- 2025-12-16
- Estimated Expiration
- 2045-09-01
AI Technical Summary
In existing technologies, filler adhesives are prone to forming pores and blooming during the heating and curing process, which affects the reliability of the encapsulation.
The filler components, which are formulated in a specific ratio, include silica, epoxy resin, anionic wetting agent and organic modified polysiloxane leveling agent. By reducing the surface tension and interfacial tension of the adhesive, the leveling window period is extended, and pores and blooming phenomena are eliminated.
It effectively eliminates pores and blooming on the surface of the filler adhesive, improving the packaging reliability of semiconductor devices.
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Figure CN120737783B_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application belongs to the technical field of semiconductor packaging, and particularly relates to a filling adhesive for eliminating air holes and mottling, a preparation method thereof and a semiconductor chip. BACKGROUND
[0002] The dam and fill process is a kind of selective filling process suitable for electronic components such as OLED, which requires two adhesives with different viscosities, i.e. dam adhesive and filling adhesive. The dam adhesive is first applied alone on the periphery of the designated protection area to form a wall, and then the filling adhesive is filled in the enclosed area until the target structure area is completely covered. When the dam adhesive and the filling adhesive are fixed, a protective barrier is formed on the surface of the electronic component, effectively improving the service life of the electronic component.
[0003] At present, in order to improve the adhesive efficiency of the filling adhesive, the adhesive path usually adopts the back-and-forth “several” type filling. However, when the wettability of the filling adhesive is poor and the two adjacent adhesive lines diffuse with each other, air will be brought into the gap of the contact edge. In the initial stage of heating and curing, the viscosity of the adhesive solution drops sharply, and air bubbles appear on the surface of the adhesive solution. If the leveling effect of the adhesive solution is not good at this time, the air bubbles will stay on the surface of the adhesive solution. With the heating time, the viscosity of the adhesive solution rises, the air bubbles break, and after complete curing, air holes are formed on the surface of the filling adhesive, affecting the packaging effect of the filling adhesive. Further, in the heating and curing process, the surface tension of the adhesive solution is not uniform, so that the adhesive solution flows from the low surface tension area to the high surface tension area, forming eddy current and mottling on the surface of the filling adhesive, thereby affecting the packaging reliability.
[0004] Therefore, how to design a filling adhesive for eliminating air holes and mottling to improve the packaging reliability of semiconductor devices is a technical problem to be solved by those skilled in the art. SUMMARY
[0005] The present application aims to provide a filling adhesive for eliminating air holes and mottling, a preparation method thereof and a semiconductor chip to at least solve the above-mentioned technical problem.
[0006] To achieve the above-mentioned purpose, the first aspect of the present application provides a filling adhesive for eliminating air holes and mottling, which comprises the following components in mass percentage: 68% to 78% of silicon dioxide, 10% to 15% of epoxy resin, 10% to 15% of curing agent, 0.3% to 1.5% of anionic wetting agent, 0.3% to 1.5% of leveling agent, 0.1% to 0.3% of carbon black and 0.1% to 0.3% of accelerator; the main component of the leveling agent is organic modified polysiloxane.
[0007] In the first aspect, the mass percentage of the silica is 74%-78%, and the mass percentage of the epoxy resin is 10%-13%.
[0008] In the first aspect, the mass percentage of the curing agent is 10%-13%, the mass percentage of the accelerator is 0.2%, and the mass percentage of the carbon black is 0.2%.
[0009] In the first aspect, the anionic wetting agent comprises at least one of sodium dicyclohexyl sulfosuccinate and sodium dioctyl sulfosuccinate.
[0010] In the first aspect, the leveling agent comprises at least one of AMORSO-137 and EFKA SL3299.
[0011] In the first aspect, the epoxy resin is a bisphenol A novolac epoxy resin, and the epoxy equivalent weight of the epoxy resin is 190-230 g / eq.
[0012] In the first aspect, the curing agent is an amine curing agent, and the amine curing agent comprises at least one of 2-methylpentanediamine and triethylenetetramine.
[0013] In the first aspect, the accelerator is an amine accelerator, and the amine accelerator comprises at least one of o-hydroxybenzyl dimethylamine, triethanolamine, and triethylamine.
[0014] The second aspect of the present application provides a preparation method of a filling glue for eliminating pores and blisters, which comprises the following steps: weighing each component of the filling glue for eliminating pores and blisters according to the mass percentage of the first aspect, and placing the components in a stirring cup to obtain a first slurry; stirring the first slurry by a first centrifugal stirrer to obtain a second slurry with uniform mixing; the working parameters of the first centrifugal stirrer include a stirring time of 110-230 s, a rotation speed of 1850 r / min, and a revolution speed of 1000 r / min; transferring the second slurry to a three-roll mill for dispersion treatment to obtain a third slurry with uniform dispersion; the working parameters of the three-roll mill include an inlet gap of 60-100 μm and an outlet gap of 30-60 μm; vacuum defoaming the third slurry by a second centrifugal stirrer to obtain the filling glue for eliminating pores and blisters; the working parameters of the second centrifugal stirrer include a stirring time of 140-160 s, a rotation speed of 1850 r / min, and a revolution speed of 1000 r / min.
[0015] The third aspect of the present application provides a semiconductor chip with a surface packaging structure formed by curing the filling glue for eliminating pores and blisters according to the first aspect.
[0016] Advantages:
[0017] The application provides a filling glue for eliminating pores and flower, which comprises the following components in percentage by mass: 68-78% of silica, 10-15% of epoxy resin, 10-15% of curing agent, 0.3-1.5% of anionic wetting agent, 0.3-1.5% of leveling agent, 0.1-0.3% of carbon black and 0.1-0.3% of accelerator; the main component of the leveling agent is organic modified polysiloxane; the epoxy resin is used as a base material, the silica is used as a filling material, the curing agent and the accelerator are combined to provide basic mechanical properties and thermal properties for the filling glue, then the specific anionic wetting agent and the leveling agent are added to the system to improve the surface properties of the filling glue; the organic modified polysiloxane leveling agent is used to reduce the surface tension of the glue solution, thereby improving the flowability of the glue solution; when the glue solution is heated, the viscosity is reduced, the organic modified polysiloxane molecules in the leveling agent preferentially migrate to the surface of the glue solution to form a monomolecular layer with low surface tension, the surface curing time is delayed, the glue solution flow window period is prolonged, the glue solution fully flows in a low viscosity state, and the surface flower phenomenon of the filling glue is eliminated; the anionic wetting agent is used to reduce the interfacial tension, so that the contact interface is fully wetted when the two adjacent glue lines diffuse to each other, air cannot enter the inside of the filling glue, the bubble generation is avoided, and the pore phenomenon on the surface of the filling glue is eliminated. The specific wetting agent and the leveling agent are added to the epoxy system, the pores and the flower phenomenon on the surface of the filling glue are eliminated through the synergistic effect of the components, and the packaging reliability of the semiconductor device is improved. BRIEF DESCRIPTION OF DRAWINGS
[0018] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings needed in the embodiments. Obviously, the drawings described below only show some embodiments of the present application, and other drawings can be obtained by those skilled in the art without any creative effort.
[0019] Figure 1 The flow chart of the preparation method of the filling glue for eliminating pores and flower provided by the present application is shown in the figure.
[0020] Figure 2 The effect comparison chart of the filling glue after curing in the embodiments and the comparative examples of the present application is shown in the figure. DETAILED DESCRIPTION
[0021] The advantages and various effects of the present application will be more clearly presented by the following specific embodiments and examples. Those skilled in the art should understand that these specific embodiments and examples are used to illustrate the present application, not to limit the present application.
[0022] Throughout the specification, unless otherwise specifically indicated, the terms used are intended to be understood as commonly used in the field of the present application. Therefore, unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the present application belongs. If there is a contradiction, the present specification takes priority.
[0023] Unless otherwise specifically indicated, the various raw materials, reagents, instruments and equipment used in the present application can be purchased from the market or obtained by existing methods.
[0024] The filling glue for eliminating pores and flashing provided by the present application comprises the following components in mass percentage: 68%-78% of silica, 10%-15% of epoxy resin, 10%-15% of curing agent, 0.3%-1.5% of anionic wetting agent, 0.3%-1.5% of leveling agent, 0.1%-0.3% of carbon black, and 0.1%-0.3% of accelerator. The main component of the leveling agent is organic modified polysiloxane.
[0025] Specifically, the filling glue for eliminating pores and flashing provided by the present application comprises the following components in mass percentage: 68%-78% of silica, 10%-15% of epoxy resin, 10%-15% of curing agent, 0.3%-1.5% of anionic wetting agent, 0.3%-1.5% of leveling agent, 0.1%-0.3% of carbon black, and 0.1%-0.3% of accelerator. The main component of the leveling agent is organic modified polysiloxane. By taking epoxy resin as the matrix material and silica as the filling material, and combining the curing agent and the accelerator to provide the basic mechanical properties and thermal properties of the filling glue, then adding specific anionic wetting agent and leveling agent in the system to improve the surface properties of the filling glue. By the organic modified polysiloxane leveling agent, the surface tension of the glue solution is reduced, thereby improving the flowability of the glue solution. When the glue solution is heated, the viscosity is reduced, the organic modified polysiloxane molecules in the leveling agent preferentially migrate to the surface of the glue solution, forming a monomolecular layer with low surface tension, delaying the surface curing time, and extending the leveling window period of the glue solution, so that the glue solution fully flows in a low viscosity state, eliminating the flashing phenomenon on the surface of the filling glue. By the anionic wetting agent, the interfacial tension is reduced, so that the contact interface is fully wetted when the adjacent two glue lines diffuse with each other, air cannot enter the inside of the filling glue, avoiding the generation of air bubbles, thereby eliminating the pore phenomenon on the surface of the filling glue. By adding specific wetting agent and leveling agent in the epoxy system, the pores and flashing phenomena on the surface of the filling glue are eliminated by the synergistic effect of the components, so as to improve the packaging reliability of semiconductor devices.
[0026] In some possible embodiments, the mass percentage of the silica is 74%-78%, and the mass percentage of the epoxy resin is 10%-13%.
[0027] In some possible embodiments, the mass percentage of the curing agent is 10% to 13%, the mass percentage of the accelerator is 0.2%, and the mass percentage of the carbon black is 0.2%.
[0028] In some possible embodiments, the anionic wetting agent comprises at least one of sodium dicyclohexyl sulfosuccinate and sodium dioctyl sulfosuccinate.
[0029] In some possible embodiments, the leveling agent comprises at least one of AMORSO-137 and EFKA SL3299.
[0030] As can be understood by those skilled in the art, when the wetting and leveling of the filling adhesive are poor, in the process of performing the back-and-forth “Z”-shaped adhesive application path, the adjacent two adhesive lines will bring air into the gap of the contact edge when diffusing, resulting in the formation of air holes on the surface of the filling adhesive after the heating and curing of the adhesive. In the present application, the anionic wetting agent and the organically modified polysiloxane leveling agent are preferred, the hydrophilic group of the sulfonate in the anionic wetting agent significantly reduces the surface tension of the filling adhesive in the epoxy system, and the organically modified polysiloxane leveling agent is combined to synergistically improve the wetting and leveling of the filling adhesive, thereby eliminating the formation of air holes and the phenomenon of blooming on the surface of the filling adhesive after heating and curing.
[0031] In some possible embodiments, the epoxy resin is a bisphenol A novolac epoxy resin, and the epoxy equivalent weight of the epoxy resin is 190 to 230 g / eq.
[0032] In some possible embodiments, the curing agent is an amine curing agent, and the amine curing agent comprises at least one of 2-methylpentanediamine and triethylenetetramine.
[0033] In some possible embodiments, the accelerator is an amine accelerator, and the amine accelerator comprises at least one of o-hydroxybenzyl dimethylamine, triethanolamine, and triethylamine.
[0034] In the present application, the bisphenol A novolac epoxy resin is selected as the base material, and the amine curing agent and the amine accelerator are combined to form an epoxy curing system, so as to accelerate the curing time of the system by the amine accelerator and improve the production efficiency.
[0035] Based on the overall inventive concept, please refer to Figure 1 The present application provides a preparation method of filling adhesive for eliminating air holes and blooming.
[0036] S1, the mass percentage of the filling adhesive for eliminating air holes and blooming according to the first aspect is weighed, and each component is placed in a stirring cup to obtain a first slurry.
[0037] S2, stirring the first slurry by a first centrifugal stirrer to obtain a second slurry which is mixed uniformly; the working parameters of the first centrifugal stirrer include: stirring time is 110-230s, rotation speed is 1850r / min, revolution speed is 1000r / min;
[0038] S3, transferring the second slurry to a three-roll grinder for dispersion treatment to obtain a third slurry which is dispersed uniformly; the working parameters of the three-roll grinder include: inlet gap is 60-100μm, outlet gap is 30-60μm;
[0039] S4, vacuum defoaming the third slurry by a second centrifugal stirrer to obtain a filling glue for eliminating pores and blisters; the working parameters of the second centrifugal stirrer include: stirring time is 140-160s, rotation speed is 1850r / min, revolution speed is 1000r / min.
[0040] The application provides a preparation method of a filling glue for eliminating pores and blisters, first, each raw material component is weighed according to a specific formula ratio, so that each raw material component can be fully mixed for subsequent crosslinking and curing reaction; then, the fully mixed slurry is transferred to a three-roll grinder for dispersion treatment, the compatibility between each raw material component is further improved, and vacuum defoaming treatment is performed to remove the gas generated in the mixing process, so that the filling glue which is dispersed uniformly and has stable fluidity is obtained. When the filling glue provided by the application is used for filling and packaging a semiconductor device, the glue solution can be uniformly filled in the dam glue, and no overflow phenomenon occurs in the filling process. After heating and curing, the filling glue is fully in contact with the dam glue, and no pores and blisters appear on the surface of the filling glue, so that the packaging reliability of the semiconductor device is improved.
[0041] Based on the overall inventive concept, the third aspect of the application provides a semiconductor chip having a surface packaging structure comprising a material formed by curing the filling glue for eliminating pores and blisters according to the first aspect.
[0042] Specifically, the application provides a semiconductor chip having a surface packaging structure, a layer of dam glue is first poured around the designated protection area to form a wall, and then the filling glue provided by the first aspect of the application is filled in the wall, heated at 100℃ for 1h, and then heated at 150℃ for 2h, so as to complete the curing of the filling glue. After the curing is completed, the surface of the filling glue is flat, and no pores and blisters appear; thus, the packaging of the semiconductor chip is completed.
[0043] The present application will be further described in conjunction with specific examples. It should be understood that these examples are only used to illustrate the present application and not used to limit the scope of the present application. The experimental methods in the following examples, if no specific conditions are noted, are generally determined according to national standards. If there is no corresponding national standard, the general international standards, conventional conditions, or the conditions suggested by the manufacturer are used.
[0044] The raw materials used in the examples and comparative examples are as follows:
[0045] Filler: silicon dioxide;
[0046] Epoxy resin: bisphenol A novolac epoxy resin: Dalian Qihua Chemical Co., Ltd., brand DBNE-201, DBNE-202, DBNE-203;
[0047] Curing agent: triethylene tetramine; 2-methyl pentanediamine;
[0048] Anionic wetting agent: sodium sulfosuccinate dihexyl ester; sodium dioctyl sulfosuccinate;
[0049] Nonionic wetting agent: polyoxyethylene alkyl phenol ether;
[0050] Organically modified polysiloxane leveling agent: Huai'an Shangyan Chemical Co., Ltd., brand AMORSO-137; Evonik, brand EFKA SL3299;
[0051] Acrylate leveling agent: BYK, brand BYK-354
[0052] Promoter: o-hydroxybenzyl dimethylamine; triethanolamine; triethylamine.
[0053] Example 1
[0054] The raw materials of the filled adhesive include, in mass percentage:
[0055] Silicon dioxide: 74%, epoxy resin DBNE-201: 12.2%, curing agent 2-methyl pentanediamine: 11.6%, anionic wetting agent sodium sulfosuccinate dihexyl ester: 0.9%, leveling agent AMORSO-137: 0.9%, carbon black: 0.2%, promoter o-hydroxybenzyl dimethylamine: 0.2%;
[0056] The specific steps for preparing the above filled adhesive are as follows:
[0057] (1) The components are weighed according to the mass percentage of each component of the above filled adhesive, and placed in a stirring cup to obtain a first slurry;
[0058] (2) The first slurry is stirred by a first centrifugal stirrer for 200 s, with a rotation speed of 1850 r / min and a revolution speed of 1000 r / min, to obtain a second slurry with uniform mixing;
[0059] (3) The second slurry is transferred to a three-roll grinder for dispersion treatment, to obtain a third slurry with uniform dispersion; the feed gap of the three-roll cylinder in the three-roll grinder is set to 60 μm, and the discharge gap is set to 30 μm;
[0060] (4) The vacuum defoaming time of the third centrifugal stirrer is set to 150 s, with a rotation speed of 1850 r / min and a revolution speed of 1000 r / min, and the second slurry is subjected to vacuum defoaming by the third centrifugal stirring, to obtain a filling adhesive.
[0061] Example 2
[0062] The raw materials of the filling adhesive include, by mass percentage:
[0063] Silicon dioxide: 74%, epoxy resin DBNE-201: 12.2%, curing agent 2-methylpentanediamine: 10.4%, anionic wetting agent sodium dioxymethylene sulfonate: 1.5%, leveling agent AMORSO-137: 1.5%, carbon black: 0.2%, and accelerator o-hydroxybenzyl dimethylamine: 0.2%;
[0064] The preparation steps of the underfill adhesive in this example are the same as those in Example 1.
[0065] Example 3
[0066] The raw materials of the filling adhesive include, by mass percentage:
[0067] Silicon dioxide: 74%, epoxy resin DBNE-201: 12.8%, curing agent 2-methylpentanediamine: 12.2%, anionic wetting agent sodium dioxymethylene sulfonate: 0.3%, leveling agent AMORSO-137: 0.3%, carbon black: 0.2%, and accelerator o-hydroxybenzyl dimethylamine: 0.2%;
[0068] The preparation steps of the underfill adhesive in this example are the same as those in Example 1.
[0069] Comparative Example 1
[0070] The raw materials of the filling adhesive include, by mass percentage:
[0071] Silicon dioxide: 74%, epoxy resin DBNE-201: 13.6%, curing agent 2-methylpentanediamine: 12%, carbon black: 0.2%, and accelerator o-hydroxybenzyl dimethylamine: 0.2%;
[0072] The preparation steps of the underfill adhesive in this example are the same as those in Example 1.
[0073] Comparative Example 2
[0074] The raw materials of the filling adhesive included, in mass percentage:
[0075] Silica: 74%, epoxy resin DBNE-201: 12.6%, curing agent 2-methylpentanediamine: 12%, anionic wetting agent sodium dimalate sulfonate: 1%, carbon black: 0.2%, accelerator o-hydroxybenzyl dimethylamine: 0.2%;
[0076] The preparation steps of the bottom filling adhesive in this comparative example were the same as those in Example 1.
[0077] Comparative Example 3
[0078] The raw materials of the filling adhesive included, in mass percentage:
[0079] Silica: 74%, epoxy resin DBNE-201: 12.6%, curing agent 2-methylpentanediamine: 12%, leveling agent AMORSO-137: 1%, carbon black: 0.2%, accelerator o-hydroxybenzyl dimethylamine: 0.2%;
[0080] The preparation steps of the bottom filling adhesive in this comparative example were the same as those in Example 1.
[0081] Comparative Example 4
[0082] The raw materials of the filling adhesive included, in mass percentage:
[0083] Silica: 74%, epoxy resin DBNE-201: 13.2%, curing agent 2-methylpentanediamine: 12%, anionic wetting agent sodium dimalate sulfonate: 0.2%, leveling agent AMORSO-137: 0.2%, carbon black: 0.2%, accelerator o-hydroxybenzyl dimethylamine: 0.2%;
[0084] The preparation steps of the bottom filling adhesive in this comparative example were the same as those in Example 1.
[0085] Comparative Example 5
[0086] The raw materials of the filling adhesive included, in mass percentage:
[0087] Silica: 74%, epoxy resin DBNE-201: 12.2%, curing agent 2-methylpentanediamine: 10%, anionic wetting agent sodium dimalate sulfonate: 1.7%, leveling agent AMORSO-137: 1.7%, carbon black: 0.2%, accelerator o-hydroxybenzyl dimethylamine: 0.2%;
[0088] The preparation steps of the bottom filling adhesive in this comparative example were the same as those in Example 1.
[0089] Comparative Example 6
[0090] The raw materials of the filling glue include, in mass percentage:
[0091] Silica: 74%, epoxy resin DBNE-201: 12.2%, curing agent 2-methylpentanediamine: 11.6%, non-ionic wetting agent polyoxyethylene alkyl phenol ether: 0.9%, leveling agent AMORSO-137: 0.9%, carbon black: 0.2%, accelerator o-hydroxybenzyl dimethylamine: 0.2%;
[0092] The preparation steps of the bottom filling glue in the present comparative example are the same as those in Example 1.
[0093] Comparative Example 7
[0094] The raw materials of the filling glue include, in mass percentage:
[0095] Silica: 74%, epoxy resin DBNE-201: 12.2%, curing agent 2-methylpentanediamine: 11.6%, anionic wetting agent sodium sulfosuccinate dihexyl: 0.9%, acrylic ester leveling agent BYK-354: 0.9%, carbon black: 0.2%, accelerator o-hydroxybenzyl dimethylamine: 0.2%;
[0096] The preparation steps of the bottom filling glue in the present comparative example are the same as those in Example 1.
[0097] The filling glue provided in Examples 1-3 and Comparative Examples 1-7 is subjected to surface tension and wettability tests, and the specific test process is as follows:
[0098] 1. Surface tension test: using a surface tension meter, the surface tension of the glue solution at 100°C is tested;
[0099] 2. Wettability test: using a contact angle tester, the contact angle of the glue solution on a 24°C substrate is tested.
[0100] The test results are shown in Table 1 below:
[0101] Table 1 Test results
[0102]
[0103] From the above table, it can be seen that:
[0104] (1) In Comparative Example 1, no wetting agent and leveling agent are added, and the surface tension and contact angle of the glue solution are large. After curing the filling glue after pouring and sealing, the surface of the cured filling glue appears pores and blooming phenomenon;
[0105] (2) In Comparative Example 2, only an anionic wetting agent was added, and although the surface tension of the glue solution decreased, the filled glue after curing still had a blooming phenomenon; in Comparative Example 3, only an organic modified polysiloxane leveling agent was added, and although the surface tension of the glue solution decreased, the filled glue after curing still had pores, and the filled glue prepared in Comparative Examples 2 and 3 could not meet the use requirements;
[0106] (3) In Comparative Examples 4 and 5, both an anionic wetting agent and an organic modified polysiloxane leveling agent were added, but in Comparative Example 4, the amount added was too low, and the synergistic effect with the epoxy-curing system was not obvious, and the filled glue after curing still had pores and a blooming phenomenon; and in Comparative Example 5, the amount added was too high, although the filled glue after curing did not have pores and a blooming phenomenon, the surface tension and contact angle of the glue solution were too small, the flowability of the glue solution was too strong, and when the glue solution was filled, the glue solution overflowed into the surrounding dam glue, causing overflow, and in addition, when the amount of the anionic wetting agent and the organic modified polysiloxane leveling agent was too high, the storage modulus of the filled glue would also decrease, which was not conducive to the reliability of the semiconductor device packaging.
[0107] (4) In Comparative Example 6, a non-ionic wetting agent, polyoxyethylene alkyl phenol ether, and an organic modified polysiloxane leveling agent were combined, and the filled glue after curing still had pores; in Comparative Example 7, an anionic wetting agent and an acrylate leveling agent were combined, and the filled glue after curing still had a blooming phenomenon;
[0108] (5) In Examples 1-3, an anionic wetting agent and an organic modified polysiloxane leveling agent were combined, and the filled glue after curing had no pores and no blooming.
[0109] (6) The effect comparison chart of the filled glue prepared in the examples and the comparative examples after curing is shown in Figure 2 , and from the data of the examples and the comparative examples, it can be seen that only the filled glue within a specific formulation ratio has a suitable surface tension and contact angle, and after heating and curing, the filled glue surface does not have pores and a blooming phenomenon, and there is no risk of overflow, thereby improving the reliability of the semiconductor device packaging.
[0110] Finally, it should be noted that the terms "comprising", "including" or any other variant thereof are intended to cover non-exclusive inclusion, so that processes, methods, articles or equipment including a series of elements not only include those elements, but also include other elements not explicitly listed, or inherent to such processes, methods, articles or equipment.
[0111] While the preferred embodiments of the application have been described, additional variations and modifications can be made to these embodiments by those skilled in the art once they have the benefit of the present disclosure without departing from the spirit and scope of the application. Accordingly, it is intended that the appended claims include all such modifications and variations as fall within the scope of the present application.
[0112] It is apparent that those skilled in the art can make various changes and modifications to the application without departing from the spirit and scope of the application. It is therefore intended that the present application cover all such changes and modifications that are within its scope.
Claims
1. A filling gum for eliminating pinholes and blushing, characterized by, The filling glue comprises the following components in percentage by mass: 68%-78% of silica, 10%-15% of epoxy resin, 10%-15% of curing agent, 0.3%-1.5% of anionic wetting agent, 0.3%-1.5% of leveling agent, 0.1%-0.3% of carbon black, and 0.1%-0.3% of accelerator; the main component of the leveling agent is organic modified polysiloxane; The anionic wetting agent comprises at least one of sodium sulfosuccinate dihexyl and sodium dioctyl sulfosuccinate; The leveling agent is at least one of AMORSO-137 and EFKA SL3299; The epoxy resin is bisphenol A novolac epoxy resin; the epoxy equivalent weight of the epoxy resin is 190-230 g / eq; The curing agent is an amine curing agent, which comprises at least one of 2-methylpentanediamine and triethylenetetramine; The accelerator is an amine accelerator, which comprises at least one of o-hydroxybenzyl dimethylamine, triethanolamine and triethylamine.
2. The filling adhesive for eliminating pinholes and flashing according to claim 1, wherein The mass percentage of the silica is 74%-78%, and the mass percentage of the epoxy resin is 10%-13%.
3. A method for preparing a filling gum for eliminating pinholes and blushing, characterized by, The preparation method comprises: According to any one of claims 1-2, the mass percentage of each component of the filling glue for eliminating pores and mottling is weighed and placed in a stirring cup to obtain a first slurry; The first slurry is stirred by a first centrifugal stirrer to obtain a second slurry uniformly mixed; the working parameters of the first centrifugal stirrer include a stirring time of 110-230 s, a revolution of 1850 r / min and a rotation of 1000 r / min; The second slurry is transferred to a three-roll grinder for dispersion treatment to obtain a third slurry uniformly dispersed; the working parameters of the three-roll grinder include an inlet gap of 60-100 μm and an outlet gap of 30-60 μm; The third slurry is vacuum defoamed by a second centrifugal stirrer to obtain the filling glue for eliminating pores and mottling; the working parameters of the second centrifugal stirrer include a stirring time of 140-160 s, a revolution of 1850 r / min and a rotation of 1000 r / min.
4. A semiconductor chip, characterized by The semiconductor chip has a surface packaging structure formed by curing the filling glue for eliminating pores and mottling according to any one of claims 1-2.
Citation Information
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Bottom filling material for chip packaging, flip chip packaging structure and preparation method
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