Shadow mask structure and manufacturing method thereof

Abstract

The invention provides a shadow mask structure and a manufacturing method thereof, and the shadow mask structure comprises a substrate which comprises a first surface and a second surface which are oppositely disposed; the graphical window is formed on the substrate in the direction from the first surface to the second surface; and the supporting structure window is formed on the substrate in the direction from the second surface to the first surface, and the supporting structure window comprises a supporting part for supporting the graphical window from the second surface and a window part for exposing the graphical window from the second surface. According to the method, high-yield, high-quality and batched thin film material graphical deposition can be provided, the technological requirement for thin film deposition graphical deposition in MEMS manufacturing can be met, equipment and structure preparation is simple, and productivity expansion is easy.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor integrated circuit design and manufacturing, and in particular relates to a shadow mask structure and a manufacturing method thereof. Background Art

[0002] In semiconductor manufacturing, a shadow mask is a template used to precisely deposit a specific pattern on a substrate. It is typically made of a thin metal sheet that is laser cut or chemically etched. This technology allows the material pattern to be accurately transferred to the substrate without the need for a photolithography process.

[0003] Shadow masks play a vital role in the manufacture of semiconductor devices. They are used to deposit metal or other materials onto substrates to create the desired pattern. A key advantage of this method is the ability to achieve highly precise pattern transfer without the use of photolithography, simplifying the manufacturing process and reducing costs. Furthermore, this technique allows deposition to be achieved without damaging the electronic devices or micromachined structures on the sample.

[0004] However, as semiconductor device sizes continue to shrink, shadow mask technology faces challenges. When device dimensions are smaller than a certain size, the shadowing effect of the mask prevents material molecules from entering their intended locations at certain angles, preventing the formation of an effective composite molecular structure. To address this shadowing effect, a smaller overall shadow mask thickness is typically employed. However, since shadow masks are typically made of metal, a thinner shadow mask can experience thermal expansion during deposition due to rising temperatures, causing the overall shadow mask to bulge and warp, preventing the formation of a highly precise and effective material structure after deposition. Using a silicon shadow mask would be difficult to achieve, and the shadowing effect would also prevent the formation of an effective material structure.

[0005] Furthermore, the need for thin film patterning exists not only on regular, flat substrates, but also on irregular, uneven substrates. For example, in the field of optical devices, it is necessary to deposit multilayer interference films on designated areas of spherical or ellipsoidal glass shells to create optical sensors with ultra-large fields of view. However, existing shadow mask structures can only deposit qualified thin film materials on regular, flat substrates.

[0006] In summary, while metal shadow masks can overcome the mask shadow effect with an extremely thin thickness, the thermal expansion effect of metal materials at high temperatures leads to low deposition pattern precision and low yield. Silicon shadow masks struggle to achieve an extremely small thickness to overcome the mask shadow effect while maintaining overall structural integrity. Furthermore, existing shadow mask structures struggle to achieve acceptable thin film material patterning requirements on irregular and uneven substrates.

[0007] Therefore, there is an urgent need to develop a Shadow Mask structure with high precision, weak mask shadow effect, no warping, good scalability, and the ability to adapt to substrates with different surface conditions.

[0008] It should be noted that the above introduction to the technical background is merely intended to provide a clear and complete description of the technical solutions of this application and facilitate understanding by those skilled in the art. Simply because these solutions are described in the background technology section of this application, it should not be assumed that the above technical solutions are well known to those skilled in the art. Summary of the Invention

[0009] In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a shadow mask structure and a manufacturing method thereof, so as to solve the problems in the prior art of large shadow effect of the mask or easy warping of the mask.

[0010] To achieve the above-mentioned objectives and other related objectives, the present invention provides a shadow mask structure, which includes: a substrate, the substrate including a first surface and a second surface arranged opposite to each other; a graphic window formed on the substrate from the first surface toward the second surface; a support structure window formed on the substrate from the second surface toward the first surface, the support structure window including a support portion supporting the graphic window from the second surface and a window portion exposing the graphic window from the second surface.

[0011] Optionally, the support structure window is made of a rigid material to support the graphic window; the graphic window includes one of a rigid structure and a flexible structure, which is used to graphicize the thin film material deposited in the graphic window.

[0012] Optionally, the graphic window and the supporting structure window are made of the same material, or the graphic window and the supporting structure window are made of different materials; the graphic window and the supporting material window are an integrated structure, or the graphic window and the supporting material window are a combined structure.

[0013] Optionally, by controlling the thickness, length, width of the support structure window and its relative position to the corresponding patterned window, the maximum incident angle of the material molecules relative to the patterned window is controlled.

[0014] Optionally, the window portion of one supporting structure window is set corresponding to one graphical window, or the window portion of one supporting structure window is set corresponding to multiple graphical windows.

[0015] Optionally, the graphical window includes an edge window arranged at the edge of the window portion of the support structure window and a center window arranged in the middle of the window portion of the support structure window. The achievable incident angle range of the material molecules from the support structure window to the edge window is 5° to 160°, and the achievable incident angle range of the material molecules from the support structure window to the center window is 5° to 160°.

[0016] Optionally, the ratio of the set deposition thickness of the thin film material deposited in the patterned window to the actual deposition thickness is in a range of 1:1 to 10:1.

[0017] Optionally, a ratio of the length to the thickness of the graphical window ranges from 1:1 to 10:1; and a ratio of the width to the thickness of the graphical window ranges from 1:1 to 10:1.

[0018] Optionally, the length of the patterned window ranges from 50 μm to 750 μm, the width ranges from 50 μm to 750 μm, and the thickness ranges from 1 μm to 100 μm.

[0019] Optionally, the length of the support structure window ranges from 300 μm to 2000 μm, the width of the support structure window ranges from 300 μm to 2000 μm, and the thickness of the support structure window ranges from 200 μm to 750 μm.

[0020] Optionally, the ratio of the length to the thickness of the support structure window is in the range of 1:1 to 10:1; the ratio of the width to the thickness of the support structure window is in the range of 1:1 to 10:1.

[0021] Optionally, the material of the graphical window includes one of silicon, silicon oxide, silicon nitride, aluminum nitride, aluminum oxide, metal, polytetrafluoroethylene, wood, Teflon, polyamide, polyimide, polyparaxylene, and hydrogel; the material of the supporting structure window is one of silicon, silicon oxide, silicon nitride, aluminum nitride, aluminum oxide, metal, polytetrafluoroethylene, wood, Teflon, polyamide, polyimide, polyparaxylene, and hydrogel.

[0022] Optionally, the shadow mask is used to deposit a thin film material on a target substrate, and the target substrate is a flat substrate, or the target substrate is an uneven substrate.

[0023] The present invention also provides a method for manufacturing a shadow mask structure, which includes the following steps: providing a substrate, the substrate including a first surface and a second surface arranged opposite to each other; forming a graphic window on the substrate from the first surface toward the second surface; forming a support structure window on the substrate from the second surface toward the first surface, the support structure window including a support portion supporting the graphic window from the second surface and a window portion exposing the graphic window from the second surface.

[0024] Optionally, the processing method for forming a graphic window on the substrate includes one of mechanical processing, micro-nano processing, laser processing, water jet cutting processing, plasma processing, welding processing, casting processing, and injection molding processing; the processing method for forming a support structure window on the substrate includes one of mechanical processing, micro-nano processing, laser processing, water jet cutting processing, plasma processing, welding processing, casting processing, and injection molding processing.

[0025] As described above, the shadow mask structure and the manufacturing method thereof of the present invention have the following beneficial effects:

[0026] The present invention adopts two window structures, respectively targeting the accuracy and yield issues in the process of thin film material graphic deposition. Each step is relatively independent, making it easy to deposit a high-precision, high-yield thin film material structure. While accurately forming tiny graphics, it also ensures the high yield of the deposited thin film material structure. The first window structure is a tiny-sized graphic window, which ensures the high accuracy of the deposited graphics through the first window structure, and the second window structure is a larger-sized support structure window, which supports the graphic window and ensures the high yield of the deposited graphics through the second window structure. Based on this, the present invention has the following advantages: 1) The deposited thin film graphics have high accuracy, and can accurately deposit tiny graphics without damaging the original structure; 2) The mask shadow effect is weakened by structural design, and the deposition incident angle is increased, so that the material structure of the deposited graphics is effective;

[0027] 3) During the deposition process, the patterned window and the support structure window will not experience overall thermal expansion and warping due to high temperature, thereby improving the yield of the deposited structure; 4) Batch thin film material patterning can be achieved on substrates with different surface conditions, and high-quality and high-precision patterning of thin film materials can be guaranteed.

[0028] Therefore, the present invention can provide high-yield, high-quality, batch-scale graphic deposition of thin film materials, which can meet the process requirements for graphic deposition of thin films in MEMS manufacturing. The equipment and structure are simple to prepare and easy to expand production capacity. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] The accompanying drawings are included to provide a further understanding of the embodiments of the present application, and constitute a part of the specification, and are used to illustrate the implementation of the present application and, together with the text description, to explain the principles of the present application. Obviously, the drawings described below are only some embodiments of the present application.

[0030] Figure 1 Shown is an overall wafer schematic diagram of the shadow mask structure in an embodiment of the present invention.

[0031] Figure 2 Shown is a top view of the structure of a shadow mask in a first specific example of the present invention.

[0032] Figure 3 Shown is a structural side view of a shadow mask structure in a first specific example of the present invention.

[0033] Figure 4 Shown is a structural cross-sectional view of the shadow mask structure in the first specific example of the present invention (the maximum achievable incident angle of material molecules incident from the support structure window to the edge window).

[0034] Figure 5 Shown is a structural cross-sectional view of the shadow mask structure in the first specific example of the present invention (the maximum achievable incident angle of material molecules incident from the support structure window to the central window).

[0035] Figure 6 FIG. 1 is a top view of a shadow mask structure in a second specific example of the present invention.

[0036] Figure 7 Shown is a structural side view of a shadow mask structure in a second specific example of the present invention.

[0037] Figure 8 Shown is a structural cross-sectional view of a shadow mask structure in a second specific example of the present invention.

[0038] Figure 9 A cross-sectional SEM image showing the thin film material pattern deposited for a conventional shadow mask structure.

[0039] Figure 10 Shown is a cross-sectional SEM image of a thin film material pattern obtained by deposition of a shadow mask structure in a first specific example of the present invention.

[0040] Figure 11A top-down OM image showing the thin film material pattern deposited using a conventional shadow mask structure.

[0041] Figure 12 Shown is a top OM image of a thin film material pattern obtained by deposition of a shadow mask structure in a first specific example of the present invention.

[0042] Figure 13 Shown is a schematic process flow diagram of a method for manufacturing a shadow mask structure according to an embodiment of the present invention.

[0043] Component number description

[0044] 101 Graphical Window

[0045] 102 Support structure window

[0046] 103 Edge incident angle

[0047] 104 Center incident angle

[0048] Steps S11 to S13 DETAILED DESCRIPTION

[0049] The following describes the embodiments of the present invention through specific examples. Those skilled in the art will readily understand the other advantages and benefits of the present invention from the disclosure herein. The present invention may also be implemented or applied through various other specific embodiments, and the details in this specification may be modified or altered based on different viewpoints and applications without departing from the spirit of the present invention.

[0050] It should be emphasized that the term "include / comprising" when used herein refers to the presence of features, integers, steps or components, but does not exclude the presence or addition of one or more other features, integers, steps or components.

[0051] Features described and / or illustrated with respect to one embodiment may be used in the same or similar manner in one or more other embodiments, combined with features in other embodiments, or substituted for features in other embodiments.

[0052] For example, when describing the embodiments of the present invention, cross-sectional views of device structures may be partially enlarged to scale for ease of explanation. Furthermore, these schematic views are merely illustrative and should not limit the scope of the present invention. Furthermore, in actual manufacturing, three-dimensional dimensions, including length, width, and depth, should be included.

[0053] For convenience, spatially relative terms such as "under," "below," "below," "below," "above," and "on" may be used herein to describe the relationship of one element or feature to other elements or features shown in the drawings. It will be understood that these spatially relative terms are intended to encompass orientations of the device in use or operation in addition to the orientation depicted in the drawings. Additionally, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.

[0054] In the context of the present application, a structure described as a first feature being "above" a second feature may include embodiments where the first and second features are formed in direct contact, and may also include embodiments where an additional feature is formed between the first and second features, such that the first and second features may not be in direct contact.

[0055] It should be noted that the illustrations provided in this embodiment are only used to schematically illustrate the basic concept of the present invention. Therefore, the illustrations only show components related to the present invention and are not drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component can be changed at will, and the component layout type may also be more complicated.

[0056] The present invention provides a shadow mask structure, comprising: a substrate including a first surface and a second surface disposed opposite each other; a patterned window 101 formed on the substrate from the first surface toward the second surface; and a support structure window 102 formed on the substrate from the second surface toward the first surface. The support structure window 102 includes a support portion supporting the patterned window 101 from the second surface and a window portion exposing the patterned window 101 from the second surface. The patterned window 101 ensures high precision of the deposited pattern, and the support structure window 102 supports the patterned window 101, thereby ensuring a high yield of the deposited pattern.

[0057] In some embodiments, the support structure window 102 is made of a rigid material to support the graphical window 101 ; the graphical window 101 includes a rigid structure and a flexible structure to implement graphical representation of the thin film material deposited in the graphical window 101 .

[0058] In some embodiments, the graphic window 101 and the support structure window 102 are made of the same material, or different materials; the graphic window 101 and the support material window are an integrated structure, or the graphic window 101 and the support material window are a combined structure. Specific options are available based on needs and are not limited to the examples listed here.

[0059] In some embodiments, the maximum incident angle of the material molecules relative to the patterned window 101 is controlled by controlling the thickness, length, width of the support structure window 102 and its relative position to the corresponding patterned window 101 .

[0060] In some embodiments, a window portion of the support structure window 102 is set corresponding to a graphic window 101, such as Figure 6 and Figure 7 As shown, the window portion of one support structure window 102 is correspondingly arranged with a plurality of graphical windows 101, such as Figure 2 and Figure 3 As shown. For example, the window portion of one support structure window 102 can correspond to two, three, four, six, or twelve graphical windows 101. Multiple graphical windows 101 can be arranged in a regular array or positioned as needed, and are not limited to the examples listed here. The window portion of the support structure window 102 can be rectangular, circular, or other shapes, and can be configured based on the arrangement of the multiple graphical windows 101 to provide a larger angle of incidence for the material molecules in the graphical windows 101.

[0061] In some embodiments, the shape of the graphical window can be set according to actual needs, such as a rectangle, a triangle, a circle, an ellipse, a trapezoid, or any desired irregular shape, and is not limited to the examples listed here.

[0062] In some embodiments, the graphic window 101 includes an edge window disposed at the edge of the window portion of the support structure window 102 and a center window disposed in the middle of the window portion of the support structure window 102. The achievable incident angle range of the material molecules from the support structure window 102 to the edge window is 5° to 160°, such as 5°, 45°, 85°, 125°, 160°, etc., which can be selected as needed and are not limited to the examples listed here. The achievable incident angle range of the material molecules from the support structure window 102 to the center window is 5° to 160°, such as 5°, 45°, 85°, 125°, 160°, etc., which can be selected as needed and are not limited to the examples listed here.

[0063] In some embodiments, the ratio of the set deposition thickness of the thin film material deposited in the graphic window 101 to the actual deposition thickness ranges from 1:1 to 10:1, such as 1:1, 3:1, 6:1, 10:1, etc., and can be selected according to needs and is not limited to the examples listed here.

[0064] In some embodiments, the ratio of the length to the thickness of the graphical window 101 ranges from 1:1 to 10:1, such as 1:1, 3:1, 6:1, 10:1, etc., which can be selected according to needs and is not limited to the examples listed here; the ratio of the width to the thickness of the graphical window 101 ranges from 1:1 to 10:1, such as 1:1, 3:1, 6:1, 10:1, etc., which can be selected according to needs and is not limited to the examples listed here.

[0065] In some embodiments, the length range of the graphical window 101 is 50μm to 750μm, such as 50μm, 250μm, 450μm, 650μm, etc.; the width range is 50μm to 750μm, such as 50μm, 250μm, 450μm, 650μm, etc.; the thickness range of the graphical window 101 is 1μm to 100μm, such as 1μm, 10μm, 50μm, 100μm, etc., which can be selected according to needs and is not limited to the examples listed here.

[0066] In some embodiments, the length range of the support structure window 102 is 300μm to 2000μm, such as 300μm, 1000μm, 1600μm, 2000μm, etc., the width range of the support structure window 102 is 300μm to 2000μm, such as 300μm, 1000μm, 1600μm, 2000μm, etc., the thickness range of the support structure window 102 is 200μm to 750μm, such as 200μm, 400μm, 600μm, 750μm, etc., which can be selected according to needs and is not limited to the examples listed here.

[0067] In some embodiments, the ratio of the length to the thickness of the support structure window 102 ranges from 1:1 to 10:1, such as 1:1, 3:1, 6:1, 10:1, etc., which can be selected according to needs and is not limited to the examples listed here; the ratio of the width to the thickness of the support structure window 102 ranges from 1:1 to 10:1, such as 1:1, 3:1, 6:1, 10:1, etc., which can be selected according to needs and is not limited to the examples listed here.

[0068] In some embodiments, the material of the graphic window 101 includes one of silicon, silicon oxide, silicon nitride, aluminum nitride, aluminum oxide, Teflon, metal (such as steel, stainless steel, etc.), polytetrafluoroethylene (PTFE), wood, polyamide, polyimide, parylene, and hydrogel. The specific material can be selected according to needs and is not limited to the examples listed here. The material of the support structure window 102 is one of silicon, silicon oxide, silicon nitride, aluminum nitride, aluminum oxide, Teflon, metal (such as steel, stainless steel, etc.), polytetrafluoroethylene (PTFE), wood, polyamide, polyimide, parylene, and hydrogel. The specific material can be selected according to needs and is not limited to the examples listed here.

[0069] In some embodiments, the shadow mask is used to deposit a thin film material on a target substrate, either a flat substrate or an uneven substrate. The shadow mask of the present invention can be used not only for patterning thin film materials on regular, flat substrates, but also for patterning thin film materials on irregular, uneven substrates. The specific method can be selected based on needs and is not limited to the examples listed here. For example, the irregular, uneven substrate can be a glass substrate with a spherical or ellipsoidal surface, and the deposited thin film material can be a multilayer interference film, etc., for the production of optical sensors with ultra-large fields of view.

[0070] like Figure 13 As shown, this embodiment also provides a method for manufacturing a shadow mask structure, the manufacturing method comprising the following steps:

[0071] Step S11, providing a substrate, wherein the substrate includes a first surface and a second surface disposed opposite to each other;

[0072] Step S12, forming a patterned window 101 on the substrate from the first surface toward the second surface;

[0073] In step S13 , a support structure window 102 is formed on the substrate from the second surface toward the first surface, wherein the support structure window 102 includes a support portion supporting the graphic window 101 from the second surface and a window portion exposing the graphic window 101 from the second surface.

[0074] In some embodiments, the material of the graphic window 101 includes one of silicon, silicon oxide, silicon nitride, aluminum nitride, aluminum oxide, Teflon, metal (such as steel, stainless steel, etc.), polytetrafluoroethylene (PTFE), wood, polyamide, polyimide, parylene, and hydrogel. The specific material can be selected according to needs and is not limited to the examples listed here. The material of the support structure window 102 is one of silicon, silicon oxide, silicon nitride, aluminum nitride, aluminum oxide, Teflon, metal (such as steel, stainless steel, etc.), polytetrafluoroethylene (PTFE), wood, polyamide, polyimide, parylene, and hydrogel. The specific material can be selected according to needs and is not limited to the examples listed here.

[0075] In some embodiments, the processing method for forming the graphic window 101 on the substrate includes one of mechanical processing, micro-nano processing, laser processing, water jet cutting, plasma processing, welding, casting, and injection molding; the processing method for forming the support structure window 102 on the substrate includes one of mechanical processing, micro-nano processing, laser processing, water jet cutting, plasma processing, welding, casting, and injection molding.

[0076] In the first specific example, press Figure 13 The shadow mask structure is manufactured by the method of manufacturing a shadow mask structure, wherein the length of the patterned window 101 is 250 μm, the width is 250 μm, and the thickness is 50 μm; the length of the support structure window 102 is 1680 μm, the width is 765 μm, and the thickness is 500 μm; the window portion of one support structure window 102 is corresponding to a plurality of (such as 3) patterned windows 101. The top view of the shadow mask structure after the completion of the manufacturing is shown as follows: Figure 2 As shown, the side view is Figure 3 shown. Figure 4 and Figure 5 The shadow mask structure is shown in a cross-sectional view, wherein the maximum edge incident angle 103 that can be achieved when the material molecules are incident from the support structure window 102 to the edge window is about 110°, and the maximum center incident angle 104 that can be achieved when the material molecules are incident from the support structure window 102 to the center window is about 130°. When using it to deposit thin film material, the film material is set to a deposition thickness of 4μm. The top view OM of the deposited thin film material pattern is as follows: Figure 12 As shown, the cross-sectional SEM of the deposited thin film material pattern is as follows Figure 10 As shown, it can be seen that the structure is loose and porous, which is an effective structure and the actual deposited thickness is 3.3 μm. Figure 11 The top OM image showing the thin film material pattern deposited by the existing shadow mask structure. Figure 9 A cross-sectional SEM image of a thin film material pattern deposited using a conventional shadow mask structure is shown. Compared to the results obtained using conventional shadow mask structures, the present invention achieves superior high-precision, high-quality, and mass-produced thin film material patterning. The alignment of a single support structure window 102 with multiple patterning windows 101 effectively increases the range of incident angles for material molecules entering from both sides of the support structure window 102.

[0077] In the second embodiment, Figure 13 The shadow mask structure is manufactured by the method of manufacturing a shadow mask structure, wherein the length of the patterned window 101 is 250 μm, the width is 250 μm, and the thickness is 50 μm; the length of the support structure window 102 is 400 μm, the width is 400 μm, and the thickness is 500 μm; the window portion of one of the support structure windows 102 is set corresponding to one of the patterned windows 101, and the top view of the shadow mask structure after the manufacturing is completed is shown as follows Figure 6 As shown, the side view is Figure 7 shown. Figure 8 The shadow mask structure is shown in a cross-sectional view. The maximum achievable edge angle of incidence 103 for material molecules entering the patterning window 101 from the support structure window 102 is approximately 75°, and the maximum achievable center angle of incidence 104 for material molecules entering the center window from the support structure window 102 is also approximately 75°. The window portion of each support structure window 102 is positioned corresponding to each patterning window 101, preventing mutual influence between material films in adjacent patterning windows 101. This ensures a relatively large incident angle for material molecules while producing relatively independent material films.

[0078] As described above, the shadow mask structure and the manufacturing method thereof of the present invention have the following beneficial effects:

[0079] The present invention employs two window structures, each addressing the precision and yield issues during the patterned deposition of thin film materials. Each step is relatively independent, making it easy to deposit a high-precision, high-yield thin film material structure. While accurately forming tiny patterns, the high yield of the deposited thin film material structure is ensured. The first window structure is a tiny patterned window 101, which ensures the high precision of the deposited pattern. The second window structure is a larger support structure window 102, which supports the patterned window 101 and ensures the high yield of the deposited pattern. Based on this, the present invention has the following advantages: 1) The deposited thin film patterning is highly precise, enabling precise deposition of tiny patterns without damaging the original structure. 2) The structural design reduces the mask shadow effect and increases the deposition incident angle, ensuring the effective material structure of the deposited pattern. 3) During the deposition process, the patterned window 101 and the support structure window 102 are prevented from undergoing thermal expansion and warping due to high temperatures, thereby improving the yield of the deposited structure. 4) It can achieve batch thin film patterning on substrates with different surface conditions, and can ensure high-quality, high-precision patterning of thin film materials.

[0080] Therefore, the present invention can provide high-yield, high-quality, batch-scale graphic deposition of thin film materials, which can meet the process requirements for graphic deposition of thin films in MEMS manufacturing. The equipment and structure are simple to prepare and easy to expand production capacity.

[0081] Therefore, the present invention effectively overcomes various shortcomings of the prior art and has high industrial utilization value.

[0082] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the present invention. Anyone skilled in the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by one of ordinary skill in the art without departing from the spirit and technical principles disclosed herein are intended to be covered by the claims of the present invention.

Claims

1. A shadow mask structure, characterized in that: include: A substrate, the substrate comprising a first surface and a second surface disposed opposite to each other; a patterned window formed on the substrate from the first surface toward the second surface; A support structure window is formed on the substrate from the second surface toward the first surface, and the support structure window includes a support portion supporting the graphic window from the second surface and a window portion exposing the graphic window from the second surface.

2. The shadow mask structure according to claim 1, wherein: The support structure window is made of a rigid material to support the graphic window; the graphic window includes one of a rigid structure and a flexible structure, which is used to graphicize the thin film material deposited in the graphic window.

3. The shadow mask structure according to claim 1, wherein: The graphic window and the supporting structure window are made of the same material, or the graphic window and the supporting structure window are made of different materials; the graphic window and the supporting material window are an integrated structure, or the graphic window and the supporting material window are a combined structure.

4. The shadow mask structure according to claim 1, wherein: By controlling the thickness, length, width of the support structure window and its relative position to the corresponding graphic window, the maximum incident angle of the material molecules relative to the graphic window is controlled.

5. The shadow mask structure according to claim 1, wherein: The window portion of one supporting structure window is set corresponding to one graphical window, or the window portion of one supporting structure window is set corresponding to multiple graphical windows.

6. The shadow mask structure according to claim 5, wherein: The graphical window includes an edge window arranged at the edge of the window portion of the support structure window and a center window arranged in the middle of the window portion of the support structure window. The achievable incident angle range of the material molecules from the support structure window to the edge window is 5° to 160°, and the achievable incident angle range of the material molecules from the support structure window to the center window is 5° to 160°.

7. The shadow mask structure according to claim 6, wherein: The ratio of the set deposition thickness of the thin film material deposited in the patterned window to the actual deposition thickness is in the range of 1:1 to 10:

1.

8. The shadow mask structure according to claim 1, wherein: The ratio of the length to the thickness of the graphic window is in the range of 1:1 to 10:1; the ratio of the width to the thickness of the graphic window is in the range of 1:1 to 10:

1.

9. The shadow mask structure according to claim 1, wherein: The length of the graphic window ranges from 50 μm to 750 μm, the width ranges from 50 μm to 750 μm, and the thickness ranges from 1 μm to 100 μm.

10. The shadow mask structure according to claim 1, wherein: The length of the support structure window ranges from 300 μm to 2000 μm, the width of the support structure window ranges from 300 μm to 2000 μm, and the thickness of the support structure window ranges from 200 μm to 750 μm.

11. The shadow mask structure according to claim 1, wherein: The ratio of the length to the thickness of the support structure window is in the range of 1:1 to 10:1; the ratio of the width to the thickness of the support structure window is in the range of 1:1 to 10:

1.

12. The shadow mask structure according to claim 1, wherein: The material of the graphic window includes one of silicon, silicon oxide, silicon nitride, aluminum nitride, aluminum oxide, metal, polytetrafluoroethylene, wood, Teflon, polyamide, polyimide, polyparaxylene, and hydrogel; the material of the support structure window is one of silicon, silicon oxide, silicon nitride, aluminum nitride, aluminum oxide, metal, polytetrafluoroethylene, wood, Teflon, polyamide, polyimide, polyparaxylene, and hydrogel.

13. The shadow mask structure according to claim 1, wherein: The shadow mask is used to deposit a thin film material on a target substrate, where the target substrate is a flat substrate or an uneven substrate.

14. A method for manufacturing a shadow mask structure according to any one of claims 1 to 13, characterized in that: The following steps are involved: Providing a substrate, the substrate comprising a first surface and a second surface disposed opposite to each other; forming a patterned window on the substrate from the first surface toward the second surface; A support structure window is formed on the substrate from the second surface toward the first surface, wherein the support structure window includes a support portion supporting the graphic window from the second surface and a window portion exposing the graphic window from the second surface.

15. The method for manufacturing a shadow mask structure according to claim 14, wherein: The processing method for forming a graphic window on the substrate includes one of mechanical processing, micro-nano processing, laser processing, water jet cutting processing, plasma processing, welding processing, casting processing, and injection molding processing; the processing method for forming a support structure window on the substrate includes one of mechanical processing, micro-nano processing, laser processing, water jet cutting processing, plasma processing, welding processing, casting processing, and injection molding processing.

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