P-band power amplifier accelerated life test method based on adjustable pulse width

Abstract

The invention discloses a P-band power amplifier accelerated life test method based on adjustable pulse width, which comprises the following steps of: constructing a relational expression between the life and channel temperature of a P-band power amplifier based on an Arrhenius reaction rate equation to obtain test temperature and test time required by a test; performing a pulse width modulation test on the P-band power amplifier by using an adjustable pulse width test system, and obtaining a required test temperature by inputting the pulse width and the duty ratio of the P-band power amplifier into the stepped adjustment system; comparing the required test temperature, testing, monitoring test parameters, and ending the test until the test time is reached; and restoring the P-band power amplifier to a normal temperature condition, and judging whether the P-band power amplifier fails or not based on the change condition of the output parameters before and after the test. According to the invention, an adjustable pulse width test system is constructed, and the accelerated life test is carried out according to the relationship between the test temperature and the test time of the P-band power amplifier.

Description

Technical Field

[0001] The present invention relates to the technical field of radio frequency device reliability testing, and more particularly to a method for accelerating life testing of a P-band power amplifier based on adjustable pulse width. Background Art

[0002] The P-band usually refers to the 400-500MHz band. P-band power amplifiers are specifically designed to operate in this band. They are characterized by long wavelengths, strong penetration capabilities, and good diffraction performance. They are suitable for long-distance transmission and are widely used in radar, communications, weather monitoring, electronic countermeasures and other fields.

[0003] However, regarding the life test of P-band power amplifiers, traditional DC aging tests cannot simulate pulsed operating conditions, resulting in large errors in the actual life assessment of the device. At the same time, the fixed pulse width test system cannot dynamically adjust the duty cycle according to the junction temperature of the device, posing a risk of overheating and burning.

[0004] Therefore, constructing an adjustable pulse width test system to perform accelerated life testing is an urgent problem that those skilled in the art need to solve. Summary of the Invention

[0005] In view of this, the present invention provides a P-band power amplifier accelerated life test method based on adjustable pulse width, constructs an adjustable pulse width test system, and performs accelerated life test according to the relationship between the test temperature and test time of the P-band power amplifier.

[0006] In order to achieve the above object, the present invention adopts the following technical solutions:

[0007] In a first aspect, the present invention provides a method for accelerating life testing of a P-band power amplifier based on adjustable pulse width, comprising the following steps:

[0008] S1. Based on the Arrhenius reaction rate equation, the relationship between the lifetime of the P-band power amplifier and the channel temperature is constructed to obtain the test temperature and test time required for the test;

[0009] S2. Performing a pulse width modulation test on the P-band power amplifier using a pre-built adjustable pulse width test system, and obtaining a required test temperature by inputting the pulse width and duty cycle of the P-band power amplifier into the system in a stepwise manner;

[0010] S3. Conducting a test based on the required test temperature and monitoring test parameters until the test time is reached, and the test ends;

[0011] S4. Restoring the P-band power amplifier to normal temperature, comparing changes in output parameters before and after the test, and determining whether the P-band power amplifier has failed.

[0012] Furthermore, step S1 includes:

[0013] S11. Based on the Arrhenius reaction rate equation, the relationship between the lifetime and channel temperature of the P-band power amplifier is constructed to obtain the experimental acceleration ratio;

[0014] S12. Calculate the cumulative time required for the test according to the point estimation method; and calculate the test temperature and corresponding test time required in the test based on the acceleration ratio.

[0015] Furthermore, in step S11, the test acceleration ratio is expressed as follows:

[0016]

[0017] Among them, E A represents activation energy; K represents the Boltzmann constant; T1 represents the channel temperature of the P-band power amplifier under normal bias working condition; T2 represents the channel temperature of the P-band power amplifier under high temperature life accelerated condition.

[0018] Furthermore, in step S12, the cumulative time required for the test is expressed as follows:

[0019]

[0020] Among them, t i represents the test time of the i-th station number, n represents the number of test stations, r represents the number of failures, MTTF represents the life of the P-band power amplifier, x n represents the chi-square distribution, and λ represents the failure rate.

[0021] Furthermore, the adjustable pulse width test system includes a main control unit, a pulse generator, an attenuator, a radio frequency switch matrix, a P-band power amplifier, a power meter and a temperature monitoring module;

[0022] The main control unit is used to receive data detected by the power meter and the temperature monitoring module, and input a control signal to the pulse generator;

[0023] The pulse generator is used to output a radio frequency signal with a corresponding pulse width and duty cycle according to the control signal;

[0024] The attenuator is used to adjust the intensity of the radio frequency signal;

[0025] The radio frequency switch matrix is ​​used to control the switch of the P-band power amplifier;

[0026] The P-band power amplifier is used to amplify the power of the input signal, measure the power through the power meter, and detect the temperature through the temperature monitoring module.

[0027] Furthermore, step S2 includes:

[0028] S21. Performing a pulse width modulation test on the P-band power amplifier using a pre-built adjustable pulse width test system to control a pulse generator to output a radio frequency signal; and testing the life of the P-band power amplifier.

[0029] S22. The main control unit adjusts the output control signal according to the temperature detected by the temperature monitoring module;

[0030] S23, stepwise adjusting the pulse width and duty cycle of the RF signal output by the pulse generator according to the control signal;

[0031] S24, processing the radio frequency signal through the attenuator and the radio frequency switch matrix; and inputting the processed signal into the P-band power amplifier for power amplification;

[0032] S25 . Detecting the channel temperature of the P-band power amplifier during the test by the temperature monitoring module until the required test temperature is reached.

[0033] Furthermore, step S3 specifically includes:

[0034] Conduct the test after reaching the required test temperature;

[0035] During the test, the operating voltage, operating current, input power, output power, chip temperature and fault data of the P-band power amplifier are monitored;

[0036] The test ends when the corresponding test time is reached.

[0037] Furthermore, step S4 specifically includes:

[0038] Restoring the P-band power amplifier to normal temperature and outputting power;

[0039] If the output power decreases by more than a preset first threshold value relative to before the test or the drain operating current changes by more than a preset second threshold value, it is determined that the P-band power amplifier has failed;

[0040] Otherwise, the P-band power amplifier has not failed.

[0041] Through the above technical solution, it can be seen that compared with the existing technology, the present invention discloses a method for accelerating the life test of a P-band power amplifier based on adjustable pulse width. First, by analyzing that the test stress of the P-band power amplifier in the pulse mode is temperature stress, the relationship between the test temperature and the test time is obtained; secondly, an adjustable pulse width test system is constructed, and the required test temperature is obtained by adjusting the pulse width and duty cycle by the system, and a pulse width modulation test is performed on the P-band power amplifier; finally, the parameters and test time during the test process are monitored to realize the life judgment of the P-band power amplifier.

[0042] This invention uses a dynamic pulse width modulation unit to achieve nanosecond pulse width modulation (adjustable from 10ns to 10us). The duty cycle is dynamically adjusted through a closed-loop temperature feedback algorithm to ensure that the junction temperature fluctuation is less than ±3°C. The frequency is dynamically adjusted according to the load, and the frequency is reduced under light load to reduce losses. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are merely embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying any creative work.

[0044] Figure 1 A flow chart of a method for accelerated life testing of a P-band power amplifier based on adjustable pulse width is provided in an embodiment of the present invention.

[0045] Figure 2 This is a structural diagram of the adjustable pulse width test system provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0046] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0047] The embodiment of the present invention discloses a method for accelerating the life test of a P-band power amplifier based on adjustable pulse width. Figure 1 As shown, the following steps are included:

[0048] S1. Based on the Arrhenius reaction rate equation, the relationship between the lifetime of the P-band power amplifier and the channel temperature is constructed to obtain the test temperature and test time required for the test;

[0049] S2. Performing a pulse width modulation test on a P-band power amplifier using a pre-built adjustable pulse width test system, achieving the required test temperature by step-by-step adjusting the pulse width and duty cycle of the P-band power amplifier input into the system; wherein the adjustable pulse width test system includes a main control unit, a pulse generator, an attenuator, an RF switch matrix, a P-band power amplifier, a power meter, and a temperature monitoring module;

[0050] S3. Conducting a test based on the required test temperature and monitoring test parameters until the test time is reached, and the test ends;

[0051] S4. Restoring the P-band power amplifier to normal temperature, comparing the output power changes before and after the test, and determining whether the P-band power amplifier has failed.

[0052] The embodiments of the present invention are applied in aviation and aerospace science and technology. The reliability of a P-band power amplifier under specific operating conditions needs to be tested, with the goal of achieving an average lifespan of 1332 hours. This embodiment uses historical data and acceleration factor baseline testing to determine an activation energy of 1.6 eV. The target failure indicators for this embodiment are a drop in output power exceeding 1 dB or a change in drain current of 20%.

[0053] This embodiment first performs test profile analysis, then calculates the test time, then constructs an adjustable pulse width test system, performs test, and finally processes the test data. The steps of this embodiment are described in detail below.

[0054] The first step is test profile analysis.

[0055] During accelerated life testing, the power amplifier is placed in a forced heat dissipation environment, where the core stress is temperature stress. During long-term storage in a nitrogen cabinet, the device is sealed in a sealed package, where the environmental stress it is subjected to is also primarily temperature stress.

[0056] In this embodiment, the power amplifier operates in pulsed mode, dynamically adjusting the pulse width and duty cycle of the input RF signal to change the device's power dissipation state, thereby precisely achieving the target channel peak temperature of 220°C (493K). During this process, the device maintains efficient heat dissipation conditions, ensuring temperature stability (fluctuation less than ±3°C).

[0057] The second step is to calculate the test time.

[0058] To determine the accelerated life test time for a P-band power amplifier, this embodiment establishes a temperature acceleration model based on the Arrhenius reaction rate equation, which describes the relationship between device life and stress temperature. The specific calculation steps are as follows:

[0059]

[0060] Among them, E A Indicates activation energy; This embodiment determines its activation energy based on the material and process of the P-band power amplifier, and sets E A =1.6eV. T1 represents the channel temperature of the P-band power amplifier under normal bias operating conditions. In this embodiment, the normal operating temperature is determined based on the actual operating environment of the P-band power amplifier, and T1 = 418K. T2 represents the channel temperature of the P-band power amplifier under high-temperature lifetime acceleration conditions. The target accelerated temperature is determined based on test profile analysis, and T2 = 493K.

[0061] In this embodiment, the above parameters are substituted into the acceleration equation to calculate the speedup ratio; the calculated result is 859.

[0062] Next, this embodiment selects the device failure rate calculation formula with a confidence level of 60% based on the point estimation method:

[0063]

[0064] Here, r represents the number of failures. In this embodiment, r=0, which means that no device fails during the test.

[0065] Calculate the cumulative component hours T for the test based on the acceleration ratio and target average lifespan. * , expressed as follows:

[0066]

[0067] According to the cumulative test component hours and the number of test stations, determine the average test time for a single sample. i represents the test time of the i-th station number, n represents the number of test stations, in this embodiment, the test station is set to 4, r represents the number of failures, MTTF represents the life of the P-band power amplifier, x n represents the chi-square distribution, and λ represents the failure rate.

[0068] Under zero failure conditions, increasing the sample size can reduce statistical volatility; the cumulative component hours of this test should reach 1332*859 hours, and the test machine time requirement is to select 4 samples for testing, and the average test time of a single sample should be no less than 334 hours.

[0069] This embodiment, based on statistical concepts in reliability engineering, simultaneously testing four samples not only shortens calendar time but also improves data reliability, as sample diversity reduces random errors. All four samples in this embodiment must be tested according to the following steps and for the required testing time to be considered as meeting the lifespan requirements for the P-band power amplifier samples in this embodiment.

[0070] The third step is to build an adjustable pulse width test system.

[0071] The temperature accelerated life test platform of this embodiment consists of a heating platform, a voltage-stabilized power supply, a feed circuit, a thermocouple thermometer, a test piece (P-band power amplifier), etc. The test sample tube is installed on the test frame of the life test bench as required, and various monitoring equipment and instruments are connected, and the relevant cables and leads are connected. The power is applied according to the predetermined working conditions, and the temperature of the heating platform is monitored by the thermocouple thermometer. Figure 2 As shown in FIG, an adjustable pulse width test system is constructed to carry out temperature accelerated life test, including: a main control unit, a pulse generator, an attenuator, a radio frequency switch matrix, a P-band power amplifier, a power meter and a temperature monitoring module.

[0072] Figure 2 The main control unit is used to measure and control the system. In this embodiment, it controls the start of the RF signal and the power supply, and records the test value on the power meter and the RF signal frequency, voltage, current and other information. The temperature monitoring module feeds back the amplifier temperature to the main control unit and compares it with the temperature setting value of the main control unit. If it is lower than the set temperature, the duty cycle will be increased. Otherwise, the pulse generator will be controlled to reduce the duty cycle so that the device finally reaches the set value.

[0073] The main control unit of this embodiment receives the test values ​​of each device and performs control. The pulse generator transmits the radio frequency signal to the attenuator and finally amplifies it through the power amplifier. The power meter measures the output power of the power amplifier.

[0074] Figure 2 The pulse signal range of the medium pulse generator is 9KHz to 13GHz, the power range is -20dBm to 20dBm, and the accuracy of frequency stability is 1Hz. This embodiment receives the main control command through the SPI interface.

[0075] Figure 2 The attenuator is an electronic device used to reduce signal power, regulate signal power, and protect circuits. It has the function of adjusting signal strength. It proportionally reduces the amplitude of the input signal through the attenuation coefficient (such as decibel value) to prevent the signal from being too strong and causing equipment overload or distortion. In a communication system, the strong signal at the transmitting end is attenuated to the power range adapted to the receiving end. The attenuator also has the function of impedance matching, ensuring that the signal is transmitted with less reflection and improving system stability. In RF circuits, the attenuator can make the source impedance and load impedance more matched, reducing signal loss.

[0076] Figure 2 The RF switch matrix in the controller controls the switching of the P-band power amplifier.

[0077] Figure 2The P-wave power amplifier in this device is a core component used to boost the power of electrical signals. Its primary function is signal amplification, specifically signal power amplification. It boosts signal amplitude, amplifying low-power input signals (such as RF and audio signals) to the required power level to meet transmission distance, coverage, or drive capability requirements. It also maintains signal quality by minimizing distortion (such as nonlinear distortion and phase shift) during the amplification process, ensuring that the output signal matches the waveform and frequency characteristics of the input signal.

[0078] Figure 2 The medium power meter is used to measure the power of the electrical signal output by the P-wave power amplifier. In this embodiment, the pulse transmitter generates a small pulse source signal, which is passed through an attenuator to obtain the RF input signal required by the power amplifier. The signal is then amplified by the power amplifier and measured by the power meter for power monitoring.

[0079] The power meter of this embodiment can cover all frequencies of the P-band power amplifier of this embodiment, with a frequency range of 10 MHz to 18 GHz and a power range of -67 dBm to +20 dBm;

[0080] The fourth step is experimental testing.

[0081] During the pre-test phase, S-parameter calibration was performed using a microwave network analyzer (Keysight N5247A). During the test phase, the duty cycle was increased in steps from 5% to 50% to 90%, with each step lasting 2 hours until the required test temperature was reached.

[0082] The larger the pulse duty cycle, the greater the proportion of RF work in the device, the greater the average power and heat consumption of the device, and the higher the temperature of the device. The temperature of the device under different pulse duty cycles can be measured by infrared equipment.

[0083] During the test, the device current, voltage, power and temperature need to be monitored to ensure that the device is in normal working condition, that the device temperature is within the set value, and that the device functions normally.

[0084] In this embodiment, the device temperature at different pulse duty cycles is measured by infrared equipment, and the device duty cycle at 220°C is recorded. Based on this operating condition, an accelerated life test is carried out and the test data is recorded. The operating voltage, operating current, input power, output power, and carrier temperature of the power amplifier are monitored throughout the entire process, as well as the occurrence of faults.

[0085] Step 5: Experimental data processing.

[0086] The P-band power amplifier after the test is restored to normal temperature conditions.

[0087] Under the specified test conditions, if the output power of the power amplifier drops by more than 1dB relative to the initial value at normal temperature after it returns to normal temperature, or the drain operating current changes by 20%, the power amplifier is judged to have failed.

[0088] If the output parameters remain unchanged or change slightly, the P-band power amplifier is not faulty.

[0089] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. Reference can be made to the common and similar parts between the various embodiments. For the devices disclosed in the embodiments, since they correspond to the methods disclosed in the embodiments, the description is relatively simple, and the relevant parts can be referred to the method description.

[0090] The above description of the disclosed embodiments is intended to enable one skilled in the art to implement or use the present invention. Various modifications to these embodiments will be readily apparent to one skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention is not limited to the embodiments shown herein but is intended to conform to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A method for accelerated life testing of a P-band power amplifier based on adjustable pulse width, characterized in that: The following steps are involved: S1. Based on the Arrhenius reaction rate equation, the relationship between the lifetime of the P-band power amplifier and the channel temperature is constructed to obtain the test temperature and test time required for the test; S2. Performing a pulse width modulation test on the P-band power amplifier using a pre-built adjustable pulse width test system, and obtaining a required test temperature by inputting the pulse width and duty cycle of the P-band power amplifier into the system in a stepwise manner; S3. Conducting a test based on the required test temperature and monitoring test parameters until the test time is reached, and the test ends; S4. Return the P-band power amplifier to normal temperature, compare the changes in output parameters before and after the test, and determine whether the P-band power amplifier has failed.

2. The method for accelerating life test of a P-band power amplifier based on adjustable pulse width according to claim 1, wherein: Step S1 includes: S11. Based on the Arrhenius reaction rate equation, the relationship between the lifetime and channel temperature of the P-band power amplifier is constructed to obtain the experimental acceleration ratio; S12. Calculate the cumulative time required for the test according to the point estimation method; and calculate the test temperature and corresponding test time required in the test based on the acceleration ratio.

3. The method for accelerating life test of a P-band power amplifier based on adjustable pulse width according to claim 2, wherein: In step S11, the test acceleration ratio is expressed as follows: Among them, E A represents activation energy; K represents the Boltzmann constant; T1 represents the channel temperature of the P-band power amplifier under normal bias working condition; T2 represents the channel temperature of the P-band power amplifier under high temperature life accelerated condition.

4. The method for accelerating life test of a P-band power amplifier based on adjustable pulse width according to claim 3, wherein: In step S12, the cumulative time required for the test is expressed as follows: Among them, t i represents the test time of the i-th station number, n represents the number of test stations, r represents the number of failures, MTTF represents the life of the P-band power amplifier, x n represents the chi-square distribution, and λ represents the failure rate.

5. The method for accelerating life test of a P-band power amplifier based on adjustable pulse width according to claim 1, wherein: The adjustable pulse width test system includes a main control unit, a pulse generator, an attenuator, a radio frequency switch matrix, a P-band power amplifier, a power meter and a temperature monitoring module; The main control unit is used to receive data detected by the power meter and the temperature monitoring module, and input a control signal to the pulse generator; The pulse generator is used to output a radio frequency signal with a corresponding pulse width and duty cycle according to the control signal; The attenuator is used to adjust the intensity of the radio frequency signal; The radio frequency switch matrix is ​​used to control the switch of the P-band power amplifier; The P-band power amplifier is used to amplify the power of the input signal, measure the power through the power meter, and detect the temperature through the temperature monitoring module.

6. The method for accelerating life test of a P-band power amplifier based on adjustable pulse width according to claim 5, characterized in that: Step S2 includes: S21. Performing a pulse width modulation test on the P-band power amplifier using a pre-built adjustable pulse width test system to control a pulse generator to output a radio frequency signal; and testing the life of the P-band power amplifier. S22. The main control unit adjusts the output control signal according to the temperature detected by the temperature monitoring module; S23, stepwise adjusting the pulse width and duty cycle of the RF signal output by the pulse generator according to the control signal; S24, processing the radio frequency signal through the attenuator and the radio frequency switch matrix; and inputting the processed signal into the P-band power amplifier for power amplification; S25 . Detecting the channel temperature of the P-band power amplifier during the test by the temperature monitoring module until the required test temperature is reached.

7. The method for accelerating life test of a P-band power amplifier based on adjustable pulse width according to claim 6, wherein: Step S3 specifically includes: Conduct the test after reaching the required test temperature; During the test, the operating voltage, operating current, input power, output power, chip temperature and fault data of the P-band power amplifier are monitored; The test ends when the corresponding test time is reached.

8. The method for accelerating life test of a P-band power amplifier based on adjustable pulse width according to claim 7, wherein: Step S4 specifically includes: Restoring the P-band power amplifier to normal temperature and outputting power; If the output power decreases by more than a preset first threshold value relative to before the test or the drain operating current changes by more than a preset second threshold value, it is determined that the P-band power amplifier has failed; Otherwise, the P-band power amplifier has not failed.

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