Composite material for LED explosion-proof lamp and LED explosion-proof lamp

Abstract

The invention discloses a composite material for an LED explosion-proof lamp, comprising: a first layer deposited on a substrate, the first layer being an AZO layer doped with Gd and Co; a second layer deposited on the first layer, the second layer being an AZO layer doped with Ce and Fe; the third layer is deposited on the second layer, and the third layer is an AZO layer doped with Gd and Fe; the fourth layer is deposited on the third layer, and the fourth layer is an AZO layer doped with La and Ni; and a fifth layer deposited on the fourth layer, the fifth layer being an AZO layer doped with La and Co. The composite AZO film disclosed by the invention has relatively low resistivity, and meanwhile, the light transmittance of the composite AZO film disclosed by the invention is relatively high.

Description

Technical Field

[0001] The present invention relates to the technical field of layered materials, in particular to a composite material for an LED explosion-proof lamp and the LED explosion-proof lamp. Background Art

[0002] The lampshades of some LED explosion-proof lamps are made of polycarbonate (PC) or acrylic. With increasingly competitive market conditions, users are placing higher demands on LED explosion-proof lamps. For example, some users operating LED explosion-proof lamps in high-temperature and high-humidity environments require lampshades with a defogger function. Aluminum-doped zinc oxide (AZO) film is a widely used transparent conductive film. Coating AZO film on polycarbonate (PC) or acrylic can provide a defogger function for LED explosion-proof lamps. However, existing AZO films have a low resistivity and cannot meet the requirements for rapid lampshade defoggering. While the resistivity of AZO films can be reduced by doping with metal elements, ensuring that the transmittance of the AZO films does not decrease after metal doping remains a challenge in the industry. Summary of the Invention

[0003] To solve the problems of the prior art, the present invention proposes a composite material for LED explosion-proof lamps. The composite material proposed in the present invention includes multiple AZO layers with specific doping elements. Through film layer structure design, co-doping of transition metal elements and rare earth elements, and adjusting the types and ratios of rare earth elements and transition metal elements in each layer, the composite AZO film of the present invention has a low resistivity and a high light transmittance.

[0004] The present invention provides a composite material for an LED explosion-proof lamp, comprising:

[0005] The first layer deposited on the substrate is an AZO layer doped with Gd and Co;

[0006] A second layer is deposited on the first layer, the second layer being an AZO layer doped with Ce and Fe;

[0007] A third layer is deposited on the second layer, the third layer being an AZO layer doped with Gd and Fe;

[0008] a fourth layer deposited on the third layer, the fourth layer being an AZO layer doped with La and Ni; and

[0009] A fifth layer is deposited on the fourth layer, and the fifth layer is an AZO layer doped with La and Co.

[0010] In a preferred embodiment, the target material for depositing the first layer is an AZO target doped with Gd and Co, wherein the Gd content in the AZO target doped with Gd and Co is 0.8-1.2 wt%, the Co content is 1.0-1.6 wt%, the Al content is 1.5-2.5 wt%, and the balance is ZnO.

[0011] In a preferred embodiment, the specific process of depositing the first layer is as follows: the magnetron sputtering power supply is a radio frequency power supply, the sputtering voltage is 10-20V, the sputtering power is 25-40W, the sputtering temperature is 100-150°C, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30-40sccm.

[0012] In a preferred embodiment, the specific process of depositing the second layer is as follows: the deposition target is an AZO target doped with Ce and Fe, wherein the Ce content in the AZO target doped with Ce and Fe is 0.5-0.8wt%, the Fe content is 0.8-1.2wt%, the Al content is 2.5-3.2wt%, and the balance is ZnO. The magnetron sputtering power supply is a radio frequency power supply, the sputtering voltage is 10-20V, the sputtering power is 40-50W, the sputtering temperature is 100-150°C, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30-40sccm.

[0013] In a preferred embodiment, the specific process of depositing the third layer is as follows: the deposition target is an AZO target doped with Gd and Fe, wherein the Gd content in the AZO target doped with Gd and Fe is 0.6-1.0wt%, the Fe content is 0.5-0.9wt%, the Al content is 1.5-2.5wt%, and the balance is ZnO. The magnetron sputtering power supply is a radio frequency power supply, the sputtering voltage is 10-20V, the sputtering power is 25-40W, the sputtering temperature is 100-150°C, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30-40sccm.

[0014] In a preferred embodiment, the specific process of depositing the fourth layer is as follows: the deposition target is an AZO target doped with La and Ni, wherein the La content in the AZO target doped with La and Ni is 0.3-0.6wt%, the Ni content is 1.0-1.6wt%, the Al content is 1.5-2.5wt%, and the balance is ZnO. The magnetron sputtering power supply is a radio frequency power supply, the sputtering voltage is 10-20V, the sputtering power is 25-40W, the sputtering temperature is 100-150°C, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30-40sccm.

[0015] In a preferred embodiment, the specific process of depositing the fifth layer is as follows: the deposition target is an AZO target doped with La and Co, wherein the La content in the AZO target doped with La and Co is 0.3-0.6wt%, the Co content is 0.9-1.3wt%, the Al content is 2.5-3.2wt%, and the balance is ZnO. The magnetron sputtering power supply is a radio frequency power supply, the sputtering voltage is 10-20V, the sputtering power is 25-40W, the sputtering temperature is 100-150°C, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30-40sccm.

[0016] In a preferred embodiment, the thickness of the first layer is 20-30 nm, the thickness of the second layer is 20-30 nm, the thickness of the third layer is 20-30 nm, the thickness of the fourth layer is 20-30 nm, and the thickness of the fifth layer is 20-30 nm.

[0017] The present invention also provides an LED explosion-proof lamp, wherein the lampshade of the LED explosion-proof lamp uses the composite material as described above.

[0018] Compared with the prior art, the present invention has the following advantages: the composite material proposed in the present invention includes multiple AZO layers with specific doping elements. Through film layer structure design, co-doping of transition metal elements and rare earth elements, and adjustment of the types and ratios of rare earth elements and transition metal elements in each layer, the composite AZO film of the present invention has a lower resistivity and a higher light transmittance. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 Schematic diagram of the membrane structure of an embodiment of the present invention.

[0020] Figure 2 This is a TEM photograph of one embodiment of the present invention.

[0021] Figure 3 4 is a transmittance variation trend diagram of an embodiment of the present invention.

[0022] Figure 4 This is a TEM photograph of another embodiment of the present invention.

[0023] Figure 5 This is a transmittance variation trend diagram of another embodiment of the present invention. DETAILED DESCRIPTION

[0024] The specific embodiments of the present invention are described in detail below with reference to the accompanying drawings, but it should be understood that the protection scope of the present invention is not limited by the specific embodiments.

[0025] Figure 1The figure is a schematic diagram of the film layer structure of one embodiment of the present invention. As shown, the composite material for an LED explosion-proof lamp of the present invention comprises, in sequence, a substrate, a first layer, a second layer, a third layer, a fourth layer, and a fifth layer. The substrate can be polycarbonate. For comparability of results, unless otherwise stated, polycarbonate was selected as the substrate material in each embodiment of the present invention and the comparative example.

[0026] Example 1

[0027] A composite material for an LED explosion-proof lamp comprises: a first layer deposited on a substrate, the first layer being an AZO layer doped with Gd and Co; a second layer deposited on the first layer, the second layer being an AZO layer doped with Ce and Fe; a third layer deposited on the second layer, the third layer being an AZO layer doped with Gd and Fe; a fourth layer deposited on the third layer, the fourth layer being an AZO layer doped with La and Ni; and a fifth layer deposited on the fourth layer, the fifth layer being an AZO layer doped with La and Co.

[0028] The target material for depositing the first layer is an AZO target doped with Gd and Co, wherein the Gd content in the AZO target doped with Gd and Co is 0.8wt%, the Co content is 1.0wt%, the Al content is 1.5wt%, and the balance is ZnO. The AZO target doped with Gd and Co can be made by a powder metallurgy process well known in the art, which generally comprises the following steps: first, ZnO, Al, Gd, and Co are weighed according to a proportion, and then ZnO, Al, Gd, and Co are mixed evenly by, for example, ball milling, and finally, the raw materials are sintered into an AZO target doped with Gd and Co by a vacuum high-temperature sintering process. The specific parameters of the aforementioned process are all well-known parameters in the art, or those skilled in the art can obtain the specific parameters of the aforementioned process through a limited number of experiments, which will not be repeated in this invention. All target materials used in the present invention are purchased from Dongchen Xianrui New Materials Co., Ltd.

[0029] The specific process for depositing the first layer is as follows: the magnetron sputtering power source is an RF power supply, the sputtering voltage is 10 V, the sputtering power is 25 W, the sputtering temperature is 100°C, and the sputtering atmosphere is an argon atmosphere with an argon flow rate of 30 sccm. Unless otherwise indicated, the magnetron sputtering equipment used in all embodiments and comparative examples of the present invention is a CK450 magnetron coating machine produced by Shenyang Pengcheng Vacuum Technology Co., Ltd.

[0030] The specific process of depositing the second layer is as follows: the deposition target is an AZO target doped with Ce and Fe, wherein the Ce content in the AZO target doped with Ce and Fe is 0.5wt%, the Fe content is 0.8wt%, the Al content is 2.5wt%, and the balance is ZnO. The magnetron sputtering power supply is an RF power supply, the sputtering voltage is 10V, the sputtering power is 40W, the sputtering temperature is 100°C, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30sccm.

[0031] The specific process of depositing the third layer is as follows: the deposition target is an AZO target doped with Gd and Fe, wherein the Gd content in the AZO target doped with Gd and Fe is 0.6wt%, the Fe content is 0.5wt%, the Al content is 1.5wt%, and the balance is ZnO. The magnetron sputtering power supply is an RF power supply, the sputtering voltage is 10V, the sputtering power is 25W, the sputtering temperature is 100°C, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30sccm.

[0032] The specific process of depositing the fourth layer is as follows: the deposition target is an AZO target doped with La and Ni, wherein the La content in the AZO target doped with La and Ni is 0.3wt%, the Ni content is 1.0wt%, the Al content is 1.5wt%, and the balance is ZnO. The magnetron sputtering power supply is an RF power supply, the sputtering voltage is 10V, the sputtering power is 25W, the sputtering temperature is 100°C, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30sccm.

[0033] The specific process of depositing the fifth layer is as follows: the deposition target is an AZO target doped with La and Co, wherein the La content of the AZO target doped with La and Co is 0.3wt%, the Co content is 0.9wt%, the Al content is 2.5wt%, and the balance is ZnO. The magnetron sputtering power supply is an RF power supply, the sputtering voltage is 10V, the sputtering power is 25W, the sputtering temperature is 100°C, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30sccm.

[0034] The thickness of the first layer is 20 nm, the thickness of the second layer is 20 nm, the thickness of the third layer is 20 nm, the thickness of the fourth layer is 20 nm, and the thickness of the fifth layer is 20 nm.

[0035] The TEM images of Example 1 can be found in Figure 2 The TEM sample preparation method is briefly described as follows: First, start grinding from one side of the substrate by, for example, sandpaper grinding. When the sample thickness is reduced to a certain thickness, place the sample in an ion thinning machine for ion thinning to obtain a TEM sample. Figure 2 It can be seen that there is a nanocrystalline structure in Example 1.

[0036] For the light transmittance variation trend diagram of Example 1, see Figure 3 As can be seen from the figure, the maximum transmittance of Example 1 can reach 87%, and the decrease in transmittance is not obvious as the wavelength increases. The explanation for the transmittance experiment of Example 1 may be as follows: From the perspective of solid-state physics, the mechanism by which the rare earth elements (Gd / La / Ce) and transition metals (Co / Fe / Ni) in the multilayer structure maintain high transmittance through low-concentration synergistic doping (all <1.6wt%) is that the 4f energy level of the rare earth elements and the 3d energy level of the transition metals are both located deep in the ZnO band gap or in the ultraviolet region (>3.3eV), avoiding electron transition absorption in the visible light band (1.6-3.1eV); at the same time, the charge compensation effect of the free electrons provided by Al³⁺ and the rare earth ions (such as La³⁺ / Gd³⁺) effectively suppresses the deep energy level recombination centers formed by transition metals (such as Co²⁺ / Ni²⁺), reducing carrier scattering losses; and the doping elements with ionic radii similar to Zn²⁺ (0.74Å) (such as Gd³⁺: 1.05Å, Co²⁺: 0.745Å) reduces lattice distortion to less than 5%, ensuring lattice integrity and reducing photon scattering. The gradient doping combination of each layer widens the bandgap, neutralizes defect charges, and utilizes multilayer interference effects to shift the impurity absorption edge into the ultraviolet region (λ < 380nm) and compress visible light reflection, ultimately improving overall light transmittance.

[0037] The resistivity of Example 1 is 7.7×10 -4 Ωcm, carrier mobility is 30.3cm 2 / VS, the carrier concentration is 4.0×10 20 / cm 3It can be seen that the resistivity of Example 1 is low, which can effectively ensure rapid defogging. The test methods for resistivity, carrier mobility, and carrier concentration of Example 1 are carried out with reference to the authorized patent CN105931960B. The transmittance experiment of Example 1 may be explained as follows: From the perspective of solid physics, the synergistic doping of rare earth elements (Gd / La / Ce) and transition metals (Co / Fe / Ni) in the multilayer structure synergistically improves the carrier transport performance through a triple mechanism: rare earth elements (such as La³⁺, Gd³⁺) stabilize the variable valence state of transition metal ions (such as Co²⁺ / Co³⁺, Ni²⁺ / Ni³⁺) through charge compensation, prompting the transition metal to form a shallow energy level donor state in the ZnO lattice, significantly increasing the free electron concentration; at the same time, the large radius of the rare earth ions (La³⁺: 1.06Å, Gd³⁺: 1.05Å) locally expands the lattice, neutralizes the lattice distortion caused by Al³⁺ (0.53Å) replacing Zn²⁺ (0.74Å), and reduces ionized impurity scattering, while the transition metals (Fe³⁺: 0.645Å, The size matching of Co²⁺: 0.745Å) and Zn²⁺ (lattice mismatch <6%) further suppresses grain boundary scattering; the gradient Al content and doping combination of each layer (such as the second layer of high Al-Ce / Fe to broaden the conduction band, and the fifth layer of La / Co to optimize the carrier distribution) form a directional energy band tilt, driving directional carrier migration.

[0038] Example 2

[0039] A composite material for an LED explosion-proof lamp comprises: a first layer deposited on a substrate, the first layer being an AZO layer doped with Gd and Co; a second layer deposited on the first layer, the second layer being an AZO layer doped with Ce and Fe; a third layer deposited on the second layer, the third layer being an AZO layer doped with Gd and Fe; a fourth layer deposited on the third layer, the fourth layer being an AZO layer doped with La and Ni; and a fifth layer deposited on the fourth layer, the fifth layer being an AZO layer doped with La and Co.

[0040] The target material for depositing the first layer is an AZO target material doped with Gd and Co, wherein the Gd content in the AZO target material doped with Gd and Co is 1.2 wt %, the Co content is 1.6 wt %, the Al content is 2.5 wt %, and the balance is ZnO.

[0041] The specific process of depositing the first layer is as follows: the magnetron sputtering power supply is a radio frequency power supply, the sputtering voltage is 20 V, the sputtering power is 40 W, the sputtering temperature is 150° C., the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30 sccm.

[0042] The specific process of depositing the second layer is as follows: the deposition target is an AZO target doped with Ce and Fe, wherein the Ce content in the AZO target doped with Ce and Fe is 0.8wt%, the Fe content is 1.2wt%, the Al content is 3.2wt%, and the balance is ZnO. The magnetron sputtering power supply is an RF power supply, the sputtering voltage is 20V, the sputtering power is 50W, the sputtering temperature is 150°C, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30sccm.

[0043] The specific process of depositing the third layer is as follows: the deposition target is an AZO target doped with Gd and Fe, wherein the Gd content in the AZO target doped with Gd and Fe is 1.0wt%, the Fe content is 0.9wt%, the Al content is 2.5wt%, and the balance is ZnO. The magnetron sputtering power supply is an RF power supply, the sputtering voltage is 20V, the sputtering power is 40W, the sputtering temperature is 150°C, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30sccm.

[0044] The specific process of depositing the fourth layer is as follows: the deposition target is an AZO target doped with La and Ni, wherein the La content in the AZO target doped with La and Ni is 0.6wt%, the Ni content is 1.6wt%, the Al content is 2.5wt%, and the balance is ZnO. The magnetron sputtering power supply is an RF power supply, the sputtering voltage is 20V, the sputtering power is 40W, the sputtering temperature is 150°C, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30sccm.

[0045] The specific process of depositing the fifth layer is as follows: the deposition target is an AZO target doped with La and Co, wherein the La content in the AZO target doped with La and Co is 0.6wt%, the Co content is 1.3wt%, the Al content is 3.2wt%, and the balance is ZnO. The magnetron sputtering power supply is an RF power supply, the sputtering voltage is 20V, the sputtering power is 40W, the sputtering temperature is 150°C, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30sccm.

[0046] The thickness of the first layer is 30 nm, the thickness of the second layer is 30 nm, the thickness of the third layer is 30 nm, the thickness of the fourth layer is 30 nm, and the thickness of the fifth layer is 30 nm.

[0047] The TEM images of Example 2 can be found in Figure 4 .

[0048] For the light transmittance variation trend diagram of Example 2, see Figure 5 As can be seen from the figure, the maximum transmittance of Example 2 can reach 86%, and the transmittance does not decrease significantly with the increase of wavelength. The resistivity of Example 1 is 7.4×10 -4 Ωcm, carrier mobility is 31.3cm2 / VS, the carrier concentration is 4.2×10 20 / cm 3 .

[0049] Example 3

[0050] A composite material for an LED explosion-proof lamp comprises: a first layer deposited on a substrate, the first layer being an AZO layer doped with Gd and Co; a second layer deposited on the first layer, the second layer being an AZO layer doped with Ce and Fe; a third layer deposited on the second layer, the third layer being an AZO layer doped with Gd and Fe; a fourth layer deposited on the third layer, the fourth layer being an AZO layer doped with La and Ni; and a fifth layer deposited on the fourth layer, the fifth layer being an AZO layer doped with La and Co.

[0051] The target material for depositing the first layer is an AZO target material doped with Gd and Co, wherein the Gd content in the AZO target material doped with Gd and Co is 1 wt %, the Co content is 1.3 wt %, the Al content is 2 wt %, and the balance is ZnO.

[0052] The specific process of depositing the first layer is as follows: the magnetron sputtering power supply is a radio frequency power supply, the sputtering voltage is 15 V, the sputtering power is 30 W, the sputtering temperature is 120° C., the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30 sccm.

[0053] The specific process of depositing the second layer is as follows: the deposition target is an AZO target doped with Ce and Fe, wherein the Ce content in the AZO target doped with Ce and Fe is 0.7wt%, the Fe content is 1wt%, the Al content is 3wt%, and the balance is ZnO. The magnetron sputtering power supply is an RF power supply, the sputtering voltage is 15V, the sputtering power is 45W, the sputtering temperature is 120°C, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30sccm.

[0054] The specific process of depositing the third layer is as follows: the deposition target is an AZO target doped with Gd and Fe, wherein the Gd content in the AZO target doped with Gd and Fe is 0.8wt%, the Fe content is 0.6wt%, the Al content is 2wt%, and the balance is ZnO. The magnetron sputtering power supply is an RF power supply, the sputtering voltage is 15V, the sputtering power is 30W, the sputtering temperature is 120°C, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30sccm.

[0055] The specific process of depositing the fourth layer is as follows: the deposition target is an AZO target doped with La and Ni, wherein the La content in the AZO target doped with La and Ni is 0.5wt%, the Ni content is 1.3wt%, the Al content is 2wt%, and the balance is ZnO. The magnetron sputtering power supply is an RF power supply, the sputtering voltage is 15V, the sputtering power is 30W, the sputtering temperature is 120°C, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30sccm.

[0056] The specific process of depositing the fifth layer is as follows: the deposition target is an AZO target doped with La and Co, wherein the La content of the AZO target doped with La and Co is 0.5wt%, the Co content is 1.2wt%, the Al content is 3wt%, and the balance is ZnO. The magnetron sputtering power supply is an RF power supply, the sputtering voltage is 15V, the sputtering power is 30W, the sputtering temperature is 120°C, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30sccm.

[0057] The thickness of the first layer is 25 nm, the thickness of the second layer is 25 nm, the thickness of the third layer is 25 nm, the thickness of the fourth layer is 25 nm, and the thickness of the fifth layer is 25 nm.

[0058] The maximum light transmittance of Example 3 can reach 85%. The resistivity of Example 3 is 7.2×10 -4 Ωcm, carrier mobility is 32.3cm 2 / VS, the carrier concentration is 4.5×10 20 / cm 3 .

[0059] Comparative Example 1

[0060] A composite material for LED explosion-proof lamps, comprising: a first layer deposited on a substrate, the first layer being an AZO layer doped with Gd and Co; a second layer deposited on the first layer, the second layer being an AZO layer doped with Ce and Fe; and a third layer deposited on the second layer, the third layer being an AZO layer doped with Gd and Fe. The remaining parameters, preparation process, and experimental methods are all referenced to Example 1. It can be understood that Comparative Example 1 has only three layers, and the target material composition and preparation method of the three layers are all referenced to Example 1. The resistivity of Comparative Example 1 is 1.0×10 -3 Ωcm.

[0061] Comparative Example 2

[0062] A composite material for LED explosion-proof lamps comprises: a first layer deposited on a substrate, the first layer being an AZO layer doped with Co and Fe; a second layer deposited on the first layer, the second layer being an AZO layer doped with Co and Fe; and a third layer deposited on the second layer, the third layer being an AZO layer doped with Co and Fe. The target materials used to form each layer are as follows: Co content is 1 wt%, Fe content is 1.3 wt%, Al content is 1.5 wt%, and the balance is ZnO. The specific process for depositing each layer is as follows: the magnetron sputtering power supply is an RF power supply, the sputtering voltage is 10 V, the sputtering power is 25 W, the sputtering temperature is 100°C, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30 sccm. The thickness of each layer is 20 nm. It is understood that Comparative Example 2 only has three layers, and the target material composition and preparation methods for these three layers are based on Comparative Example 2. The maximum transmittance of Comparative Example 2 is 78%. Because its transmittance is lower than the user's requirement, the electrical performance of Comparative Example 2 was not tested.

[0063] Comparative Example 3

[0064] The target material for depositing the first layer is an AZO target material doped with Gd and Co, wherein the Gd content in the AZO target material doped with Gd and Co is 1.8 wt %, the Co content is 2 wt %, the Al content is 1.5 wt %, and the balance is ZnO.

[0065] The specific process of depositing the second layer is as follows: the deposition target is an AZO target doped with Ce and Fe, wherein the Ce content of the AZO target doped with Ce and Fe is 1.5wt%, the Fe content is 1.5wt%, the Al content is 2.5wt%, and the balance is ZnO.

[0066] The specific process of depositing the third layer is as follows: the deposition target is an AZO target doped with Gd and Fe, wherein the Gd content in the AZO target doped with Gd and Fe is 1.5wt%, the Fe content is 1.5wt%, the Al content is 1.5wt%, and the balance is ZnO. The remaining parameters, preparation process, and experimental methods are all referenced to Example 1. It can be understood that Comparative Example 3 has five layers, and the preparation methods and target material compositions of the fourth and fifth layers are all referenced to Example 1. Comparative Example 3 only introduces parameters that are different from Example 1. The maximum transmittance of Comparative Example 3 is 75%. Since its transmittance is lower than the user's requirements, the electrical properties of Comparative Example 3 are no longer tested.

[0067] Comparative Example 4

[0068] The specific process of depositing the second layer is as follows: the magnetron sputtering power supply is a radio frequency power supply, the sputtering voltage is 40 V, the sputtering power is 100 W, the sputtering temperature is 100° C., the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30 sccm.

[0069] The specific process for depositing the third layer is as follows: the magnetron sputtering power source is an RF power supply, the sputtering voltage is 50V, the sputtering power is 100W, the sputtering temperature is 100°C, and the sputtering atmosphere is an argon atmosphere with an argon flow rate of 30 sccm. The remaining parameters, preparation process, and experimental methods are similar to those in Example 1. It should be understood that Comparative Example 4 has five layers, and only the parameters that differ from Example 1 are described in Comparative Example 4. The sample in Comparative Example 4 exhibited film fragmentation and could not be tested.

[0070] It should be understood that the above-described specific embodiments of the present invention are merely illustrative or illustrative of the principles of the present invention and do not constitute limitations of the present invention. Therefore, any modifications, equivalent substitutions, improvements, etc. made without departing from the spirit and scope of the present invention should be included within the scope of protection of the present invention. In addition, the appended claims are intended to cover all variations and modifications that fall within the scope and metes and bounds of the appended claims, or equivalents thereof.

Claims

1. A composite material for an LED explosion-proof lamp, comprising: a first layer deposited on a substrate, the first layer being an AZO layer doped with Gd and Co; a second layer deposited on the first layer, the second layer being an AZO layer doped with Ce and Fe; a third layer deposited on the second layer, the third layer being an AZO layer doped with Gd and Fe; a fourth layer deposited on the third layer, the fourth layer being an AZO layer doped with La and Ni; as well as A fifth layer is deposited on the fourth layer, wherein the fifth layer is an AZO layer doped with La and Co.

2. The composite material according to claim 1, wherein The target material for depositing the first layer is an AZO target material doped with Gd and Co, wherein the Gd content in the AZO target material doped with Gd and Co is 0.8-1.2wt%, the Co content is 1.0-1.6wt%, the Al content is 1.5-2.5wt%, and the balance is ZnO.

3. The composite material according to claim 2, wherein The specific process of depositing the first layer is as follows: the magnetron sputtering power supply is a radio frequency power supply, the sputtering voltage is 10-20V, the sputtering power is 25-40W, the sputtering temperature is 100-150°C, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30-40sccm.

4. The composite material according to claim 1, wherein The specific process of depositing the second layer is as follows: the deposition target is an AZO target doped with Ce and Fe, wherein the Ce content in the AZO target doped with Ce and Fe is 0.5-0.8wt%, the Fe content is 0.8-1.2wt%, the Al content is 2.5-3.2wt%, and the balance is ZnO. The magnetron sputtering power supply is an RF power supply, the sputtering voltage is 10-20V, the sputtering power is 40-50W, the sputtering temperature is 100-150°C, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30-40sccm.

5. The composite material according to claim 1, wherein The specific process of depositing the third layer is as follows: the deposition target is an AZO target doped with Gd and Fe, wherein the Gd content in the AZO target doped with Gd and Fe is 0.6-1.0wt%, the Fe content is 0.5-0.9wt%, the Al content is 1.5-2.5wt%, and the balance is ZnO. The magnetron sputtering power supply is a radio frequency power supply, the sputtering voltage is 10-20V, the sputtering power is 25-40W, the sputtering temperature is 100-150°C, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30-40sccm.

6. The composite material according to claim 1, wherein The specific process of depositing the fourth layer is as follows: the deposition target is an AZO target doped with La and Ni, wherein the La content in the AZO target doped with La and Ni is 0.3-0.6wt%, the Ni content is 1.0-1.6wt%, the Al content is 1.5-2.5wt%, and the balance is ZnO. The magnetron sputtering power supply is a radio frequency power supply, the sputtering voltage is 10-20V, the sputtering power is 25-40W, the sputtering temperature is 100-150°C, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30-40sccm.

7. The composite material according to claim 1, wherein The specific process of depositing the fifth layer is as follows: the deposition target is an AZO target doped with La and Co, wherein the La content in the AZO target doped with La and Co is 0.3-0.6wt%, the Co content is 0.9-1.3wt%, the Al content is 2.5-3.2wt%, and the balance is ZnO. The magnetron sputtering power supply is a radio frequency power supply, the sputtering voltage is 10-20V, the sputtering power is 25-40W, the sputtering temperature is 100-150°C, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30-40sccm.

8. The composite material according to claim 1, wherein The thickness of the first layer is 20-30 nm, the thickness of the second layer is 20-30 nm, the thickness of the third layer is 20-30 nm, the thickness of the fourth layer is 20-30 nm, and the thickness of the fifth layer is 20-30 nm.

9. An LED explosion-proof lamp, wherein: The lampshade of the LED explosion-proof lamp is made of the composite material according to any one of claims 1 to 8.

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