Waste gas pretreatment device for semiconductor manufacturing equipment

Abstract

According to the present invention, provided is an exhaust gas pretreatment device for semiconductor manufacturing equipment, which is a device for pretreating exhaust gas discharged through a vacuum pump chamber exhaust pipe from a semiconductor process chamber in which a semiconductor manufacturing process using a process gas is performed, the chamber exhaust pipe connecting the semiconductor process chamber and a vacuum pump, comprising a waste gas reaction chamber arranged on the chamber exhaust pipe; and a plasma reactor for generating a plasma gas containing a reactive species by generating a plasma decomposition source gas. The exhaust gas reaction chamber is provided with an exhaust gas reaction part and a cooling mechanism, wherein the exhaust gas reaction part is internally provided with an exhaust gas reaction space for mixing and reacting the to-be-treated component contained in the exhaust gas and the reactive active species, and the cooling mechanism is arranged in the exhaust gas reaction part.

Description

Technical Field

[0001] The present invention relates to semiconductor manufacturing equipment technology, and more particularly to a technology for preventing a decrease in the fluidity of exhaust gas exhausted from a process chamber of a semiconductor manufacturing equipment. Background Art

[0002] Semiconductor components are manufactured in semiconductor process chambers by repeatedly performing processes such as photolithography, etching, diffusion, and metal deposition on wafers using a variety of process gases. After completing these processes, residual gases remain in the chamber. Because these gases contain toxic components, they are removed via vacuum pumps and purified through exhaust treatment devices such as scrubbers.

[0003] The Low-Fluorine Tungsten (LFW) process is a process for performing atomic layer deposition (ALD) in semiconductor processes using a process gas containing tungsten hexafluoride (WF6), diborane (B2H6), argon (Ar), and hydrogen (H2). After the LFW process is performed, the exhaust gas containing WF6 and B2H6 is discharged from the semiconductor process chamber through a vacuum pump. The WF6 and B2H6 contained in the exhaust gas of the LFW process may react to form a film of W X By-product. Film-like W X The by-products are deposited in the vacuum pump, causing the performance of the vacuum pump to deteriorate, thus shortening the mean time between failures (MTBF) of the vacuum pump.

[0004] The amorphous carbon layer (ACL) process is a process for depositing amorphous carbon (amorphous carbon layer) to form an amorphous carbon film (ACL) during semiconductor processing. After the ACL process, residual gas containing hydrogenated amorphous carbon (aC:H) is generated in the process chamber. After the ACL process, the exhaust gas containing hydrogenated amorphous carbon (aC:H) is exhausted from the semiconductor process chamber via a vacuum pump. The hydrogenated amorphous carbon (aC:H) contained in the ACL process exhaust gas is deposited in the vacuum pump, reducing vacuum pump performance and shortening the vacuum pump's mean time to market (MTBF).

[0005] The Tetraethyl Ortho Silicate (TEOS) process (Si(OC2H5)4) uses TEOS gas in semiconductor manufacturing to deposit TEOS films on wafers. After the TEOS process, residual gas containing TEOS is generated in the process chamber. After the TEOS process, the TEOS-containing exhaust gas is exhausted from the semiconductor process chamber via a vacuum pump. The TEOS contained in the exhaust gas reacts with oxygen to form SiO2 (silicon dioxide) powder as a byproduct. This SiO2 powder is deposited in the vacuum pump, reducing vacuum pump performance and shortening its mean time-to-market (MTBF).

[0006] Regarding the present invention, Korean Patent No. 10-1315880 describes a technical solution for performing a LFW process in the manufacture of a metal wiring structure, Korean Patent No. 10-2009-0057487 describes a technical solution for performing an ACL process in the manufacture of a semiconductor element, Korean Patent No. 10-2009-0070800 describes a technical solution for performing a TEOS process in the manufacture of a semiconductor element, and Korean Patent No. 10-2019-0019651 describes a technical solution for a plasma chamber for treating exhaust gas. Summary of the Invention

[0007] Technical issues

[0008] An object of the present invention is to provide an exhaust gas pretreatment device for pretreating exhaust gas to prevent a decrease in the fluidity of exhaust gas discharged from a process chamber in a semiconductor manufacturing device that uses multiple process gases to perform a semiconductor manufacturing process.

[0009] Another object of the present invention is to provide an exhaust gas pretreatment device for pre-treating exhaust gas before it flows into a vacuum pump to prevent the deposition of film-like W in the vacuum pump that exhausts residual gas from the semiconductor process chamber. X by-product.

[0010] Another object of the present invention is to provide an exhaust gas pretreatment device, which is used to pretreat exhaust gas before it flows into a vacuum pump to prevent hydrogenated amorphous carbon (aC:H) from being deposited in the vacuum pump that exhausts residual gas from a semiconductor process chamber.

[0011] Another object of the present invention is to provide an exhaust gas pretreatment device, which is used to pretreat exhaust gas before it flows into a vacuum pump to prevent SiO2 powder from being deposited in the vacuum pump that exhausts residual gas from a semiconductor process chamber.

[0012] Technical Solution

[0013] In order to achieve the above-mentioned purpose of the present invention, according to one aspect of the present invention, there is provided an exhaust gas pretreatment device for semiconductor manufacturing equipment, which is used as a device for pretreating exhaust gas discharged from a semiconductor process chamber that performs a semiconductor manufacturing process using process gas through a vacuum pump and a chamber exhaust pipe, wherein the chamber exhaust pipe connects the above-mentioned semiconductor process chamber and the above-mentioned vacuum pump, and comprises: an exhaust gas reaction chamber, which is arranged on the above-mentioned chamber exhaust pipe; and a plasma reactor, which generates plasma gas containing reactive species by generating plasma to decompose source gas, the above-mentioned exhaust gas reaction chamber having an exhaust gas reaction section in which an exhaust gas reaction space is formed for mixing and reacting components to be treated contained in the above-mentioned exhaust gas with the above-mentioned reactive species, and a cooling mechanism arranged in the above-mentioned exhaust gas reaction section.

[0014] To achieve the above-mentioned object of the present invention, according to another aspect of the present invention, there is provided an exhaust gas pretreatment device for semiconductor manufacturing equipment, which is used to pretreat exhaust gas discharged from a semiconductor process chamber performing a semiconductor manufacturing process using process gas through a vacuum pump and a chamber exhaust pipe, the chamber exhaust pipe connecting the semiconductor process chamber and the vacuum pump. The device includes: an exhaust gas reaction chamber disposed on the chamber exhaust pipe; a plasma reactor that generates plasma to decompose a source gas to generate plasma gas containing reactive species; and a plasma supply pipe connecting the exhaust gas reaction chamber and the plasma reactor, the plasma supply pipe having a plasma supply channel through which the plasma gas generated in the plasma reactor is discharged and flows, and a cooling fluid channel through which a cooling fluid flows. The exhaust gas reaction chamber has an exhaust gas reaction section having an exhaust gas reaction space formed therein, in which components to be treated contained in the exhaust gas and the reactive species flowing in through the plasma supply channel mix and react.

[0015] Technical Effects

[0016] According to the present invention, all of the aforementioned objectives of the present invention can be achieved. Specifically, according to the exhaust gas pretreatment device of the present invention, an exhaust gas reaction chamber is provided on the exhaust pipe of the chamber through which the exhaust gas flows. Reactive species generated by an external plasma reactor are supplied to the exhaust gas reaction chamber. In the exhaust gas reaction chamber, components in the exhaust gas that induce the generation of powder are removed by reacting with the reactive species, thereby effectively preventing a decrease in the flowability of the exhaust gas.

[0017] Furthermore, the exhaust gas reaction chamber is cooled by a cooling mechanism, thereby preventing the exhaust gas pre-treatment device from being damaged due to overheating.

[0018] In addition, diborane (B2H6) and nitrogen trifluoride (NF3) contained in the exhaust gas discharged from the semiconductor process chamber are decomposed by the external plasma reactor to generate reactive species ( ) reacts in the exhaust gas treatment chamber and is removed, suppressing W X The generation of by-products can prevent the performance of the vacuum pump from deteriorating.

[0019] In addition, the SiO2 powder and nitrogen trifluoride (NF3) contained in the exhaust gas discharged from the semiconductor process chamber are decomposed by the external plasma reactor to generate reactive species ( ) reacts in the exhaust gas treatment chamber and is removed, thereby preventing SiO2 powder from being deposited in the vacuum pump.

[0020] In addition, hydrogenated amorphous carbon and oxygen (O2) contained in the exhaust gas exhausted from the semiconductor process chamber are decomposed by the external plasma reactor to generate reactive species ( ) reacts in the exhaust gas treatment chamber and is removed, thereby preventing hydrogenated amorphous carbon from being deposited in the vacuum pump. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 1 is a diagram showing a schematic configuration of a semiconductor manufacturing facility equipped with an exhaust gas pre-treatment device according to one embodiment of the present invention;

[0022] Figure 2 for Figure 1 A longitudinal sectional view of a plasma reactor of a pre-processing device of a semiconductor manufacturing equipment is shown;

[0023] Figure 3 for Figure 2 A perspective view of the magnetic core shown;

[0024] Figure 4 for Figure 1 A detailed schematic diagram of the structure of the 'E' part;

[0025] Figure 5 for Figure 4 A perspective view of the exhaust gas reaction chamber in the structure;

[0026] Figure 6 for Figure 5 A cross-sectional view of the exhaust gas reaction chamber taken along line AA' is shown;

[0027] Figure 7 for Figure 5 A BB' line cross-sectional view of the exhaust gas reaction chamber shown;

[0028] Figure 8 for Figure 4 A schematic diagram of a plasma supply tube in a structure of FIG.

[0029] Figure 9 、 Figure 10 、 Figure 11 To illustrate Figure 4 Schematic diagram of a state in which exhaust gas is pre-treated in an exhaust gas reaction chamber. DETAILED DESCRIPTION

[0030] The configuration and function of the embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0031] exist Figure 1 The block diagram shows the brief structure of a semiconductor manufacturing equipment equipped with an exhaust gas pre-treatment device according to an embodiment of the present invention. Figure 1 The semiconductor manufacturing equipment 100 includes a semiconductor manufacturing device 101 that performs a semiconductor manufacturing process for manufacturing semiconductor elements, an exhaust gas treatment device 103 that treats gas exhausted from the semiconductor manufacturing device 101, an exhaust device 105 that exhausts gas from the semiconductor manufacturing device 101 and causes it to flow to the exhaust gas treatment device 103, and an exhaust gas pretreatment device 109 according to an embodiment of the present invention that pretreats the gas exhausted from the semiconductor manufacturing device 101 to prevent a decrease in gas fluidity.

[0032] Semiconductor manufacturing apparatus 101 manufactures semiconductor devices by performing a semiconductor manufacturing process using a variety of process gases. Semiconductor manufacturing apparatus 101 includes a semiconductor processing chamber 102 for performing the semiconductor manufacturing process using a variety of process gases. Although not shown, semiconductor manufacturing apparatus 101 also includes a process gas supply unit that supplies the process gases required by semiconductor processing chamber 102 in various ways and by type.

[0033] Semiconductor process chamber 102 includes all types of semiconductor process chambers commonly used in the field of semiconductor manufacturing equipment technology for manufacturing semiconductor devices. Residual gas generated in semiconductor process chamber 102 is exhausted to the outside through exhaust device 105 and purified by exhaust gas treatment device 103. In this embodiment, the semiconductor process performed in semiconductor process chamber 102 is described as a low-fluorine tungsten (LFW) process using atomic layer deposition (ALD) of a process gas containing tungsten hexafluoride (WF6), diborane (B2H6), argon (Ar), and hydrogen (H2); an amorphous carbon film (ACL) process using a process gas containing propylene (C3H6), argon (Ar), and helium (He); or a TEOS process using TEOS gas to deposit a TEOS film on a wafer.

[0034] The LFW process may be a process for forming a metal wiring structure in a semiconductor memory device, such as that described in Korean Patent No. 10-1315880. Residual gas generated after a semiconductor process is performed in the semiconductor process chamber 102 is exhausted from the process chamber 102 as exhaust gas via the exhaust device 105. The exhaust gas exhausted from the semiconductor process chamber 102 may contain WF6 and B2H6. The WF6 and B2H6 contained in the exhaust gas exhausted from the semiconductor process chamber 102 may react to form a film-like W X Byproduct, film-like W X The by-products are deposited in the exhaust device 105, which results in a decrease in the performance of the exhaust device 105. According to the present invention, the exhaust gas pre-treatment device 109 removes B2H6, thereby suppressing the formation of film-like W. X The formation of by-products.

[0035] The ACL process may be, for example, the semiconductor process disclosed in Korean Patent Publication No. 10-2009-0057487. After the ACL process is performed, residual gas containing amorphous carbon (aC:H) is generated in process chamber 102. After the ACL process is performed, the residual gas containing hydrogenated amorphous carbon (aC:H) generated in semiconductor process chamber 102 is exhausted from semiconductor process chamber 102 via exhaust device 105 as exhaust gas. The hydrogenated amorphous carbon (aC:H) contained in the exhaust gas exhausted from semiconductor process chamber 102 is deposited in exhaust device 105, degrading the performance of exhaust device 105. According to the present invention, the hydrogenated amorphous carbon (aC:H) is removed by exhaust gas pretreatment device 109, thereby preventing the deposition of hydrogenated amorphous carbon (aC:H).

[0036] The TEOS process can be, for example, the semiconductor process disclosed in Korean Patent Publication No. 10-2009-0070800. After the TEOS process is performed, residual gas containing TEOS is generated in the process chamber. After the TEOS process is performed, exhaust gas containing TEOS is exhausted from the semiconductor process chamber via a vacuum pump. The TEOS contained in the exhaust gas reacts with oxygen to produce SiO2 (silicon dioxide) powder as a byproduct. This SiO2 powder deposits in the exhaust device 105, degrading the performance of the exhaust device 105. According to the present invention, the exhaust gas pre-treatment device 109 removes the SiO2 powder, preventing the deposition of SiO2 powder.

[0037] Exhaust gas treatment device 103 treats and purifies harmful components contained in exhaust gas discharged from semiconductor process chamber 102 by exhaust device 105. Exhaust gas treatment device 103 includes a scrubber 104 for treating the exhaust gas. Scrubber 104 includes any type of scrubber commonly used for treating exhaust gas in the field of semiconductor manufacturing equipment technology.

[0038] The exhaust device 105 exhausts residual gas generated after a process is performed in the semiconductor processing chamber 102 from the semiconductor processing chamber 102. The exhaust device 105 includes a vacuum pump 106, a chamber exhaust pipe 107 connecting the semiconductor processing chamber 102 and the vacuum pump 106, and a pump exhaust pipe 108 extending downstream from the vacuum pump 106.

[0039] The vacuum pump 106 creates a negative pressure on the semiconductor process chamber 102 side through a chamber exhaust pipe 107 connecting the semiconductor process chamber 102 and the vacuum pump 105, thereby exhausting the residual gas in the semiconductor process chamber 102 as exhaust gas. The vacuum pump 106 includes a structure of a vacuum pump commonly used in the field of semiconductor manufacturing equipment technology, so this will not be described in detail. A film-like W generated as a by-product of the LFW process may be deposited in the vacuum pump 106. XBy-products, hydrogenated amorphous carbon (aC:H) generated as a by-product of the ACL process, and SiO2 powder generated as a by-product of the TEOS process cause the performance of the vacuum pump 106 to deteriorate. According to the present invention, the exhaust gas pre-treatment device 109 is used to suppress the film-like W X The generation of by-products and the removal of hydrogenated amorphous carbon (aC:H) and SiO2 powder extend the MTBF of the vacuum pump 106.

[0040] The chamber exhaust pipe 107 connects the exhaust port of the semiconductor processing chamber 102 and the suction port of the vacuum pump 106. Due to the negative pressure created by the vacuum pump 106, residual gas in the semiconductor processing chamber 102 is discharged as exhaust gas through the chamber exhaust pipe 107. While flowing through the chamber exhaust pipe 107, the exhaust gas is pre-treated by the exhaust gas pre-treatment device 109.

[0041] A pump exhaust pipe 108 extends downstream from the vacuum pump 106. The pump exhaust pipe 108 is connected to the exhaust port of the vacuum pump 106, and exhaust gas discharged from the vacuum pump 106 flows through the pump exhaust pipe 108. A scrubber 104 is connected to the downstream end of the pump exhaust pipe 108, so that exhaust gas discharged from the vacuum pump 106 flows into the scrubber 103 through the pump exhaust pipe 108.

[0042] The exhaust gas pre-treatment device 109 pre-treats the exhaust gas exhausted from the semiconductor processing chamber 102 to prevent a decrease in the fluidity of the exhaust gas exhausted from the semiconductor processing chamber 102. The exhaust gas pre-treatment device 109 generates reactive species using plasma. Before the exhaust gas exhausted from the semiconductor processing chamber 102 flows into the vacuum pump 106, the generated reactive species react with components to be treated contained in the exhaust gas to remove the components to be treated. The exhaust gas pre-treatment device 109 includes a plasma reactor 110 that generates reactive species using plasma, a power supply 180 that supplies power to the plasma reactor 110, a gas supply 185 that supplies source gas to the plasma reactor 110, an exhaust gas reaction chamber 150 disposed on the chamber exhaust pipe 107 and configured to react the reactive species generated in the plasma reactor 110 with components to be treated contained in the exhaust gas, and a plasma supply pipe 170 that connects the plasma reactor 110 and the exhaust gas reaction chamber 150.

[0043] The plasma reactor 110 uses plasma to decompose the gas supplied from the gas supplier 185 to generate reactive species. In this embodiment, the plasma reactor 110 uses plasma to generate excited (exited) fluorine atoms ( ) or generate excited oxygen atoms as reactive oxygen ( ) as the reactive species. In this embodiment, the excited state fluorine atom ( ) Nitrogen trifluoride (NF3) supplied by the gas supplier 185 is decomposed by plasma in the plasma reactor 110 to generate excited oxygen atoms ( ) is supplied by the gas supply 185 and is generated by plasma decomposition in the plasma reactor 110. In this embodiment, the plasma reactor 110 is described as an inductively coupled plasma reactor utilizing inductively coupled plasma (ICP). While this embodiment describes the plasma reactor 110 utilizing inductively coupled plasma, the present invention is not limited thereto. In the present invention, a plasma reactor includes all plasma reactors that initiate a plasma reaction (e.g., a plasma reactor utilizing capacitively coupled plasma (CCP)), which also fall within the scope of the present invention.

[0044] Figure 2 The longitudinal cross-sectional view of the plasma reactor 110 is shown in FIG. Figure 2 The plasma reactor 110 includes a plasma reaction chamber 120, a magnetic core 130 disposed to surround the plasma reaction chamber 120, an igniter 140 for igniting plasma, and a magnetic core 130 wound around the magnetic core 130 and connected to a power source ( Figure 1 180) to obtain a coil (not shown) powered by electricity.

[0045] The plasma reaction chamber 120 is a toroidal shaped chamber having a gas inlet 121, a gas outlet 123 spaced apart from the gas inlet 121, and a plasma reaction section 125 connecting the gas inlet 121 and the gas outlet 123 for generating a plasma reaction. Figure 1 The gas supplied by 185) is decomposed to generate reactive species.

[0046] The gas inlet 121 is in the shape of a short tube extending around the linear extension axis X. The front end of the gas inlet 121 is open to form an inlet 122 for gas inflow. The inlet 122 is formed by the gas inlet pipe ( Figure 1 The inlet 122 is connected to the gas supply 185 . Nitrogen trifluoride (NF 3 ) or oxygen (O 2 ) supplied by the gas supply 185 flows into the plasma reaction chamber 120 through the inlet 122 .

[0047] The gas discharge portion 123 is a short tube shaped and is coaxially spaced apart from the gas inlet portion 121 on the extension axis X. The rear end of the gas discharge portion 123 is open to form an outlet 124 for gas discharge. The outlet 124 is connected to the plasma supply pipe ( Figure 1 170) and the exhaust gas reaction chamber ( Figure 1 The reactive species generated in the plasma reaction chamber 120 are discharged through the discharge port 124 and then flow along the plasma supply pipe ( Figure 1 187) flows into the exhaust gas reaction chamber ( Figure 1 of 150).

[0048] The plasma reaction section 125 connects the spaced gas inlet 121 and gas outlet 123, forming a plasma reaction region H within the section where thermal and plasma reactions of the gases occur. The plasma reaction section 125 includes a first connecting pipe section 126 and a second connecting pipe section 127, spaced apart and arranged on either side of the extension axis X. The first connecting pipe section 126 and the second connecting pipe section 127 extend parallel to the extension axis X and communicate with the gas inlet 121 and the gas outlet 123. As a result, plasma is generated in the plasma reaction section 125 along a circular discharge loop R indicated by the dashed line.

[0049] Under the action of the plasma formed in the plasma reaction region H, the gas flowing in through the inlet 122 decomposes to generate reactive species. As shown in the figure, when nitrogen trifluoride (NF3) flows in through the inlet 122, nitrogen trifluoride (NF3) decomposes in the plasma reaction region H to generate excited fluorine atoms ( ) and fluorine (F2). Specifically, in the plasma reaction region H, nitrogen trifluoride (NF3) can be decomposed into nitrogen (N2), fluorine (F2), excited nitrogen atoms ( ), excited fluorine atoms ( ) and electrons (e). Although not shown, when oxygen (O2) flows in through the inlet 122, oxygen (O2) decomposes in the plasma reaction region H to generate excited oxygen atoms ( ).

[0050] In this embodiment, a plasma reaction chamber 120 is described, which is composed of a first chamber component 120a and a second chamber component 120b. The first chamber component 120a includes the entire gas inlet 121, a portion of a first connecting pipe 126 connected to the gas inlet 121, and a portion of a second connecting pipe 127. The second chamber component 120b includes the entire gas outlet 123, a portion of the first connecting pipe 126 connected to the gas outlet 123, and a portion of the second connecting pipe 127.

[0051] The magnetic core 130 is disposed so as to surround the plasma reaction chamber 120. In this embodiment, the magnetic core 130 is a ferrite core commonly used in an inductively coupled plasma generator. Figure 3 A perspective view of the magnetic core 130 is shown in FIG. Figure 2 and Figure 3 The magnetic core 130 includes an annular portion 131 that externally surrounds the plasma reaction portion 125 of the plasma reaction chamber 120 , and a connecting portion 135 that crosses an inner region of the annular portion 131 .

[0052] The annular portion 131 is generally rectangular and disposed perpendicular to the extension axis X, externally surrounding the plasma reaction portion 125 of the plasma reaction chamber 120. The rectangular annular portion 131 has two opposing long sides 132a and 132b and two opposing short sides 133a and 133b.

[0053] The connecting portion 135 extends linearly to connect the two opposing long sides 132a and 132b of the annular portion 131. The two ends of the connecting portion 135 are connected to the centers of the two long sides 132a and 132b, respectively. The connecting portion 135 is positioned to pass through the gap 128 formed between the first connecting tube portion 126 and the second connecting tube portion 127 of the plasma reaction chamber 120. The connecting portion 135 divides the interior of the annular portion 131 into a first through-opening 136 and a second through-opening 137. The first connecting tube portion 126 of the reaction chamber 120 passes through the first through-opening 136, and the second connecting tube portion 127 of the plasma reaction chamber 120 passes through the second through-opening 137. As a result, the magnetic core 130 is formed to externally enclose the first connecting tube portion 126 and the second connecting tube portion 127 of the plasma reaction chamber 120, respectively.

[0054] See also Figure 2 , the igniter 140 receives power ( Figure 1 In this embodiment, the igniter 140 is arranged adjacent to the gas inlet 121 in the plasma reaction portion 125 of the plasma reaction chamber 120, but the present invention is not limited thereto.

[0055] The coil (not shown) is wound around the magnetic core 130 and connected to a power source ( Figure 1 The coil (not shown) is connected to the power supply ( Figure 1 180) obtains radio frequency alternating current to form an induced magnetic flux on the magnetic core 130. An induced electric field is generated based on the induced magnetic flux formed on the magnetic core 130, and plasma is formed based on the generated induced electric field.

[0056] See also Figure 1 In order to generate inductively coupled plasma, the power supply 180 is wound around the magnetic core ( Figure 2 The power supply 180 also applies radio frequency alternating current to the coil (not shown) of the igniter ( Figure 1 140) power supply.

[0057] The gas supplier 185 stores a source gas of reactive species generated by plasma in the plasma reactor 110, and supplies the stored source gas to the plasma reactor 110 through the gas inlet pipe 186. In this embodiment, the gas supplier 185 supplies nitrogen trifluoride (NF3) or oxygen (O2) as the source gas of reactive species to the plasma reactor 110.

[0058] See also Figure 1 as well as Figure 4 The exhaust gas reaction chamber 150 is provided on the chamber exhaust pipe 107 and receives the reactive species generated in the plasma reactor 110 through the plasma supply pipe 170. In the exhaust gas reaction chamber 150, the components to be treated contained in the exhaust gas react with the reactive species and are removed. Figure 5 、 Figure 6 as well as Figure 7 The exhaust reaction chamber 150 includes a chamber body 151 and a cooling mechanism 160 disposed on the chamber body 151. In the present invention, the exhaust reaction chamber 150 disposed on the chamber exhaust pipe 107 also includes the case where the exhaust reaction chamber 150 is disposed at the downstream end of the chamber exhaust pipe 107. In this case, the exhaust reaction chamber 150 is located at the front end of the vacuum pump 106.

[0059] The chamber body 151 includes an exhaust gas inlet 152 , an exhaust gas outlet 154 spaced apart from the exhaust gas inlet 152 , and an exhaust gas reaction portion 156 connecting the exhaust gas inlet 152 and the exhaust gas outlet 154 and allowing reactive species to react with components to be treated.

[0060] The exhaust gas inlet 152 is in the shape of a short tube, and the front end of the exhaust gas inlet 152 is opened to form an inlet 153 for the exhaust gas to flow in. The inlet 153 is connected to the chamber exhaust pipe ( Figure 1 107) and semiconductor process chamber ( Figure 1 102) is connected. Through the inlet 153, from the semiconductor process chamber ( Figure 1 The exhaust gas discharged from 102) flows into the exhaust gas reaction section 156.

[0061] The exhaust gas discharge portion 154 is a short tube shaped and is spaced apart from the exhaust gas inlet portion 152. The rear end of the exhaust gas discharge portion 154 is open to form an exhaust port 155 for exhausting gas. The exhaust port 155 is connected to the chamber exhaust pipe ( Figure 1107) and vacuum pump ( Figure 1 The gas discharged from the exhaust gas reaction unit 156 through the exhaust port 155 is discharged through the chamber exhaust pipe ( Figure 1 107) flows into the vacuum pump ( Figure 1 106).

[0062] The exhaust gas reaction section 156 connects the exhaust gas inlet section 152 and the exhaust gas outlet section 154, and forms an exhaust gas reaction space 157 inside. Figure 1 110) supply reactive species and contained in the semiconductor process chamber ( Figure 1 The components to be treated of the waste gas discharged from the exhaust gas 102 are mixed and reacted in the waste gas reaction space 157. The waste gas reaction part 156 is a cylindrical shape in which the waste gas inlet 152 and the waste gas outlet 154 are coaxial. The waste gas reaction space 157 formed inside has a cylindrical shape corresponding to the outer shape of the waste gas reaction part 156. The waste gas reaction space 157 is generally in the shape of a low disk and has a larger diameter than the chamber exhaust pipe ( Figure 1 Thus, the exhaust gas reaction space 157 has a larger diameter than the chamber exhaust pipe ( Figure 1 The exhaust gas reaction space 157 is connected to the chamber exhaust pipe (107) through the exhaust gas inlet 152 and the exhaust gas outlet 154. Figure 1 107) is connected. A plasma inlet 158 ​​connected to the plasma supply pipe 170 is formed on the periphery of the exhaust gas reaction part 156. Figure 1 The reactive species generated in 110) flow into the exhaust gas reaction space 157 through the plasma inlet portion 158.

[0063] Cooling mechanism 160 is installed in exhaust gas reaction section 156 of chamber body 151. It uses cooling water to lower the temperature of exhaust gas reaction chamber 150, thereby preventing damage due to overheating. Cooling mechanism 160 includes three cooling jackets 161, 163, and 165, and four cooling fluid pipes 166, 167, 168, and 169 connected to the three cooling jackets 161, 163, and 165.

[0064] Of the three cooling jackets 161, 163, and 165, one 161 is an outer peripheral cooling jacket surrounding the outer periphery of the exhaust gas reaction unit 156. Another 163 is an upstream end cooling jacket located outside the upstream end of the exhaust gas reaction unit 156. The remaining 165 is a downstream end cooling jacket located outside the downstream end of the exhaust gas reaction unit 156. The outer peripheral cooling jacket 161 defines an outer peripheral cooling fluid receiving space 161a for accommodating a cooling fluid such as cooling water. The upstream end cooling jacket 163 defines an upstream cooling fluid receiving space 163a for accommodating a cooling fluid such as cooling water. The downstream end cooling jacket 165 defines a downstream cooling fluid receiving space 165a for accommodating a cooling fluid such as cooling water. The exhaust gas reaction unit 156 is cooled by the cooling fluid contained in the cooling fluid receiving spaces 161a, 163a, and 165a of the three cooling jackets 161, 163, and 165, respectively. The three cooling jackets 161, 163, and 165 are connected to four cooling fluid pipes 166, 167, 168, and 169. Although the present embodiment illustrates the use of three cooling jackets, the present invention is not limited thereto. The use of fewer than two or more than four cooling jackets is also within the scope of the present invention.

[0065] Four cooling fluid pipes 166, 167, 168, and 169 are connected to the three cooling jackets 161, 163, and 165. Of the four cooling water pipes 166, 167, 168, and 169, one 166 is a first cooling fluid inlet and outlet pipe connected to the upstream end cooling jacket 163, another 167 is a second cooling fluid inlet and outlet pipe connected to the downstream end cooling jacket 165, another 168 is a first connecting pipe connecting the upstream end cooling jacket 163 and the peripheral cooling jacket 161, and the remaining one 169 is a second connecting pipe connecting the downstream end cooling jacket 165 and the peripheral cooling jacket 161. A cooling fluid C such as cooling water flows into the upstream end cooling jacket 163 through the first cooling water inlet and outlet pipe 166. The cooling fluid in the upstream end cooling jacket 163 flows into the peripheral cooling jacket 161 through the first connecting pipe 168. The cooling fluid in the peripheral cooling jacket 161 flows into the downstream end cooling jacket 165 through the second connecting pipe 169. The cooling water in the downstream end cooling jacket 165 is discharged through the second cooling water inlet and outlet pipe 167. Although the present embodiment describes a case where the cooling fluid flows in through the first cooling water inlet and outlet pipe 166 and is discharged through the second cooling water inlet and outlet pipe 167, the cooling fluid may alternatively flow in through the second cooling water inlet and outlet pipe 167 and be discharged through the first cooling water inlet and outlet pipe 166, which also falls within the scope of the present invention.

[0066] See also Figure 2The plasma supply pipe 170 connects the plasma reactor 110 and the plasma inlet 158 ​​of the exhaust reaction chamber 150 . Reactive species generated in the plasma reactor 110 are supplied to the exhaust reaction space 157 of the exhaust reaction chamber 150 through the plasma supply pipe 170 . Figure 8 The structure of the plasma supply tube 170 is shown in FIG. Figure 8 The plasma supply tube 170 includes a plasma supply channel 171 connecting the plasma reactor 110 and the exhaust gas reaction chamber 150, and a cooling fluid channel 175 formed to surround the plasma supply channel 171. Reactive species generated in the plasma reactor 110 flow through the plasma supply channel 171 into the exhaust gas reaction space 157 of the exhaust gas reaction chamber 150. A cooling fluid, such as cooling water, flows through the cooling fluid channel 175 to reduce the temperature of the gas flowing into the exhaust gas reaction chamber 150 through the plasma supply channel 171, thereby improving the cooling performance of the exhaust gas reaction chamber 150.

[0067] Figure 9 FIG. 1 shows a state in which the exhaust gas containing B2H6 produced by the low-fluorine tungsten (LFW) process is pre-treated in the exhaust gas reaction chamber 150. Figure 9 In the exhaust gas reaction chamber 150, B2H6 contained in the exhaust gas reacts with excited fluorine atoms ( ) and fluorine (F2) to generate boron trifluoride (BF3) and hydrogen fluoride (HF), thereby removing B2H6. B2H6 is removed to prevent the formation of film-like W X By-products. Although not shown, the reactive species ( ) flows into the vacuum pump ( Figure 1 106), and deposited in a vacuum pump ( Figure 1 The tungsten (W) in the 106) reacts to generate tungsten hexafluoride (WF6) gas, which can also remove the deposited in the vacuum pump ( Figure 1 In addition, although not shown, the fluorine (F2) discharged without reacting in the exhaust reaction chamber 150 flows into the vacuum pump ( Figure 1 106), and deposited in a vacuum pump ( Figure 1 106) in hydrocarbons (C X H Y ) reacts to generate carbon tetrafluoride (CF4) and hydrogen fluoride (HF), thereby also being able to remove the deposited in the vacuum pump ( Figure 1 106) in hydrocarbons (C X H Y ).

[0068] Figure 10 FIG. 1 shows a state in which pre-treatment of exhaust gas containing hydrogenated amorphous carbon (aC:H) generated by an amorphous carbon layer (ACL) process is performed in the exhaust gas reaction chamber 150. Figure 10 In the exhaust gas reaction chamber 150, hydrogenated amorphous carbon (aC:H) contained in the exhaust gas reacts with excited oxygen atoms ( ) reacts to generate carbon dioxide gas (CO2) and water vapor (H2O), thereby removing hydrogenated amorphous carbon (aC:H). Although not shown, the reactive species ( ) flows into the vacuum pump ( Figure 1 106), and deposited in a vacuum pump ( Figure 1 The hydrogenated amorphous carbon (aC:H) in the 106) reacts to generate carbon dioxide gas (CO2) and water vapor (H2O), thereby also being able to remove the deposited in the vacuum pump ( Figure 1 106) in hydrogenated amorphous carbon (aC:H).

[0069] Figure 11 FIG. 2 shows a state in which pre-treatment of exhaust gas containing SiO2 powder produced by a TEOS process is performed in the exhaust gas reaction chamber 150. Figure 11 In the exhaust gas reaction chamber 150, the SiO2 powder contained in the exhaust gas reacts with the excited fluorine atoms ( ) reaction to generate silicon tetrafluoride (SiF4) gas, thereby removing SiO2 powder. By removing SiO2 powder, it is prevented from being deposited in the vacuum pump ( Figure 1 Although not shown in the figure, the reactive species ( ) flows into the vacuum pump ( Figure 1 106), and deposited in a vacuum pump ( Figure 1 The SiO2 powder in the 106) reacts to generate silicon tetrafluoride (SiF4) gas, so it can also remove the deposited in the vacuum pump ( Figure 1 106) in SiO2 powder.

[0070] The present invention has been described above by way of embodiments, but the present invention is not limited thereto. The embodiments may be modified or altered without departing from the spirit and scope of the present invention, and those skilled in the art will appreciate that such modifications and alterations also belong to the present invention.

Claims

1. An exhaust gas pretreatment device for semiconductor manufacturing equipment, configured to pretreat exhaust gas exhausted from a semiconductor process chamber performing a semiconductor manufacturing process using process gas through a vacuum pump and a chamber exhaust pipe, the chamber exhaust pipe connecting the semiconductor process chamber and the vacuum pump, comprising: an exhaust gas reaction chamber, which is arranged on the chamber exhaust pipe; as well as A plasma reactor generates a plasma gas containing reactive species generated by decomposing a source gas by generating plasma, The exhaust gas reaction chamber includes an exhaust gas reaction portion forming an exhaust gas reaction space for mixing and reacting the components to be treated contained in the exhaust gas with the reactive species, and a cooling mechanism provided in the exhaust gas reaction portion.

2. The exhaust gas pretreatment device for semiconductor manufacturing equipment according to claim 1, wherein: The cooling mechanism comprises: The cooling jacket is arranged outside the exhaust gas reaction part and has a cooling fluid accommodating space formed therein for accommodating cooling fluid.

3. The exhaust gas pretreatment device for semiconductor manufacturing equipment according to claim 2, wherein: There are a plurality of cooling clips, The cooling mechanism further comprises a cooling fluid pipeline for connecting the plurality of cooling jackets.

4. The exhaust gas pretreatment device for semiconductor manufacturing equipment according to claim 1, wherein: The exhaust gas reaction portion is cylindrical and expands outward more than the chamber exhaust pipe.

5. The exhaust gas pretreatment device for semiconductor manufacturing equipment according to claim 4, wherein: The cooling mechanism comprises: The peripheral cooling jacket is provided so as to surround the peripheral surface of the exhaust gas reaction unit and has a peripheral cooling fluid receiving space formed therein for receiving a cooling fluid.

6. The exhaust gas pretreatment device for semiconductor manufacturing equipment according to claim 5, wherein: The cooling mechanism also has: an upstream end cooling jacket, which is provided at the upstream end of the exhaust gas reaction section and has an upstream cooling fluid receiving space formed therein for receiving a cooling fluid; and The downstream end portion cooling jacket is provided at the downstream end portion of the exhaust gas reaction portion and has a downstream cooling fluid accommodating space formed therein for accommodating a cooling fluid.

7. The exhaust gas pretreatment device for semiconductor manufacturing equipment according to claim 6, wherein: The cooling mechanism also has: a first connecting pipe connecting the upstream end cooling jacket and the peripheral cooling jacket; as well as The second connecting pipe connects the downstream end cooling jacket and the peripheral cooling jacket.

8. The exhaust gas pretreatment device for semiconductor manufacturing equipment according to claim 7, wherein: The cooling mechanism also has: a first cooling fluid inlet and outlet pipe, communicating with the upstream end cooling jacket; and The second cooling fluid inlet and outlet pipe is communicated with the downstream end cooling jacket.

9. The exhaust gas pretreatment device for semiconductor manufacturing equipment according to claim 1, wherein: Also includes: a plasma supply pipe connecting the exhaust gas reaction chamber and the plasma reactor, The plasma supply pipe has a plasma supply channel through which the plasma gas generated in the plasma reactor is exhausted and flows, and a cooling fluid channel through which a cooling fluid flows.

10. An exhaust gas pretreatment device for semiconductor manufacturing equipment, configured to pretreat exhaust gas exhausted from a semiconductor process chamber performing a semiconductor manufacturing process using process gas through a vacuum pump and a chamber exhaust pipe, the chamber exhaust pipe connecting the semiconductor process chamber and the vacuum pump, comprising: an exhaust gas reaction chamber, arranged on the chamber exhaust pipe; a plasma reactor that decomposes a source gas by generating plasma to generate a plasma gas containing reactive species; as well as a plasma supply pipe connecting the exhaust gas reaction chamber and the plasma reactor, The plasma supply pipe has a plasma supply channel through which the plasma gas generated in the plasma reactor is exhausted and flows, and a cooling fluid channel through which a cooling fluid flows. The exhaust gas reaction chamber includes an exhaust gas reaction portion forming an exhaust gas reaction space therein for mixing and reacting components to be treated contained in the exhaust gas and the reactive species flowing in through the plasma supply channel.

11. The exhaust gas pretreatment device for semiconductor manufacturing equipment according to claim 1 or claim 10, wherein: The source gas is nitrogen trifluoride (NF3), The reactive species include excited fluorine atoms ( ).

12. The exhaust gas pretreatment device for semiconductor manufacturing equipment according to claim 11, wherein: The exhaust gas contains diborane (B2H6), The diborane and the excited fluorine atom ( ) reaction and is removed.

13. The exhaust gas pretreatment device for semiconductor manufacturing equipment according to claim 11, wherein: The tungsten deposited in the vacuum pump and the excited fluorine atoms ( ) reaction and is removed.

14. The exhaust gas pretreatment device for semiconductor manufacturing equipment according to claim 11, wherein: The exhaust gas contains SiO2 powder, The SiO2 powder and the excited fluorine atoms ( ) reaction and is removed.

15. The exhaust gas pretreatment device for semiconductor manufacturing equipment according to claim 1 or claim 10, wherein: The source gas is oxygen (O2), The reactive species include excited oxygen atoms ( ).

16. The exhaust gas pre-treatment device for semiconductor manufacturing equipment according to claim 15, wherein: The off-gas contains hydrogenated amorphous carbon (aC:H), The hydrogenated amorphous carbon (aC:H) and the excited oxygen atom ( ) reaction and is removed.

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