Thermal control chamber disconnecting and connecting piece

Abstract

An apparatus includes a first assembly and a second assembly. The first assembly includes a first disconnector having a first conduit connected thereto, and a temperature-controlled housing in contact with the first conduit. A first temperature-controlled housing is connected to the first portion of the process chamber and includes a heater. The second assembly is connected to the second portion of the process chamber and includes a second disconnector having a second conduit connected thereto. At least one of the first portion and the second portion is movable between at least two configurations. In a configuration, the first portion is spaced apart from the second portion. In another configuration, the first disconnect and the second disconnect are fluidly connected to form a fluid pathway through the first conduit and the second conduit across the contact interface between the first and second portions. The temperature-controlled housing is configured to transfer thermal energy to the first conduit via the first heater.

Description

Background Art

[0001] Semiconductor manufacturing typically involves one or more process operations to deposit and / or etch structures on or in a semiconductor wafer (or substrate). Such processes may employ one or more vapor delivery systems in which vapor phase precursors, and sometimes gaseous precursors, react with and / or on a substrate surface to deposit material thereon or remove material therefrom. While there are many forms of vapor delivery systems, they are generally configured to provide controlled gas flows and delivery of precursors that would otherwise be in a liquid or solid phase under ambient temperature and atmospheric pressure conditions. This phase difference between storage and supply to a process volume (or chamber) presents a number of challenges, hindering efforts to prevent undesirable condensation, deposition, etching, particle generation, etc., in and / or by at least the delivery piping of the vapor delivery system.

[0002] The background description provided here is for the purpose of generally presenting the context of the present disclosure. The work of the presently designated inventors to the extent described in this background section and aspects of the specification that were not determined to be prior art at the time the application was filed are neither explicitly nor implicitly admitted to be prior art against the present disclosure. Summary of the Invention

[0003] Details of one or more implementations of the subject matter described in this specification are set forth in the accompanying drawings and the following description. Other features, aspects, and advantages will become apparent from the description, drawings, and claims. The following non-limiting implementations are considered part of this disclosure; other implementations will also be apparent from the overall disclosure and drawings.

[0004] Some embodiments provide systems, apparatus, and methods to control the temperature of precursors at multiple stages of supply and delivery to a process chamber, including regions spanning separable portions of the process chamber and routing through confined spaces that cannot accommodate conventional heating and insulation techniques.

[0005] Additional aspects will be set forth in the detailed description which follows, and in part will be apparent from the invention, or may be learned by practice of the disclosed embodiments and / or claimed subject matter.

[0006] According to some embodiments, an apparatus includes a semiconductor processing chamber, at least one gas distributor, a first fluid interface assembly, and a second fluid interface assembly. The semiconductor processing chamber includes a first portion and a second portion movably connected to the first portion in a first configuration. The first portion and the second portion define a housing associated with the first configuration. The at least one gas distributor is configured to distribute one or more process gases within the housing. The first fluid interface assembly includes a first fluid disconnect, a first conduit extending in an axial direction and including a first end structurally connected to the first fluid disconnect, and a first temperature-controlled housing at least partially surrounding and contacting the first conduit. The first temperature-controlled housing is structurally connected to the first portion and includes a first heater. The second fluid interface assembly is structurally connected to the second portion. The second fluid interface assembly includes a second fluid disconnect and a second conduit extending in an axial direction and including a first end structurally connected to the second fluid disconnect. At least one of the first portion and the second portion is movable between the first configuration and the second configuration. In the second configuration, the first portion and the second portion are spaced apart from each other in the axial direction. In a first configuration, the first fluid disconnect and the second fluid disconnect are configured to be fluidically connected to form a first fluid passage across a contact interface between the first portion and the second portion through the first conduit and the second conduit. The first temperature-controlled housing is configured to transfer thermal energy to the first conduit via a first heater. The thermal energy transferred to the first conduit increases the temperature of the first conduit to a temperature above the vaporization temperature of the precursor of the one or more process gases.

[0007] In some embodiments, the first fluid passageway may be configured to supply the one or more process gases to a gas distributor.

[0008] In some embodiments, the second fluid interface assembly may further include a second temperature-controlled housing at least partially surrounding and contacting the second conduit, the second temperature-controlled housing may be structurally connected to the second portion and may include a second heater, the second temperature-controlled housing may be configured to transfer thermal energy to the second conduit via the second heater, and the thermal energy transferred to the second conduit may increase the temperature of the second conduit to above the vaporization temperature of the precursor.

[0009] In some embodiments, the first temperature controlled housing may be structurally connected to the first portion and within a through-hole extending through the first portion.

[0010] In some embodiments, the second temperature-controlled housing can be structurally connected to the second portion and at least partially within the recessed area of ​​the second portion.

[0011] In some embodiments, the device may further include a cover plate removably coupled to the second portion. The cover plate may include a surface facing the recessed area of ​​the second portion in a direction transverse to the axial direction. The surface of the cover plate may be spaced apart from the second temperature-controlled housing in this direction.

[0012] In some embodiments, the first fluid interface assembly may further include a third conduit having a first end structurally connected to the first fluid disconnect, the first temperature-controlled housing may at least partially surround and contact the third conduit, and the second fluid interface assembly may further include a fourth conduit having a first end structurally connected to the second fluid disconnect. In the first configuration, the first and second fluid disconnects may be further configured to be fluidically connected to form a second fluid pathway across the interface between the first and second portions through the third and fourth conduits. The second fluid pathway may be fluidically connected to the purge drain, and the first temperature-controlled housing may be further configured to transfer thermal energy to the third conduit via the first heater, wherein the thermal energy transferred to the third conduit may increase the temperature of the third conduit to at least the vaporization temperature of the precursor.

[0013] In some embodiments, the second temperature-controlled housing may at least partially surround and contact the fourth conduit, and the second temperature-controlled housing may be further configured to transfer thermal energy to the fourth conduit via the second heater, and the thermal energy transferred to the fourth conduit may increase the temperature of the fourth conduit to at least the vaporization temperature of the precursor.

[0014] In some embodiments, the device may further include a third fluid interface assembly and a fourth fluid interface assembly. The third fluid interface assembly may include a third fluid disconnect component structurally connected to the first portion, a fifth conduit extending in an axial direction and including a first end structurally connected to the third fluid disconnect component, and a seventh conduit extending in an axial direction and including a first end structurally connected to the third fluid disconnect component. The fourth fluid interface assembly may include a fourth fluid disconnect component structurally connected to the second portion, a sixth conduit extending in an axial direction and including a first end structurally connected to the fourth fluid disconnect component, and an eighth conduit extending in an axial direction and including a first end structurally connected to the fourth fluid disconnect component. In a first configuration, the third and fourth fluid disconnect components may be configured to be fluidically connected to form a third fluid pathway across the contact interface via the fifth and sixth conduits, and to form a fourth fluid pathway across the contact interface via the seventh and eighth conduits. The third fluid pathway may be configured to supply at least one gas to the gas distributor, and the fourth fluid pathway may be configured to transfer at least one gas to the purge drain.

[0015] In some embodiments, the third and fourth fluid interface components may not include a heater, and the third and fourth fluid interface components may be disposed adjacent to the first and second fluid interface components.

[0016] In some embodiments, the first temperature-controlled housing may include a first housing portion and a second housing portion. The first housing portion may include a first surface and a second surface, the second surface being opposite the first surface in a first direction transverse to the axial direction and facing the first conduit in a second direction opposite the first direction. The second housing portion may be coupled to the first housing portion. The second housing portion may include a third surface and a fourth surface opposite the third surface in a second direction. The fourth surface may face the second surface in the first direction and may include a first channel that may be configured to receive a portion of the first conduit therein.

[0017] In some embodiments, the first housing portion may include a plurality of first openings located in the second surface, the second housing portion may include a plurality of first through-holes extending between the third surface and the fourth surface, each of the first through-holes may be aligned with a corresponding first opening of the first openings, and the first temperature-controlled housing may further include a plurality of first fasteners. Each of the first fasteners may extend through a corresponding first through-hole of the first through-holes and may engage with a corresponding first opening aligned with the corresponding first through-hole.

[0018] In some embodiments, the third surface of the second housing portion can include one or more alignment features that can be configured to engage with one or more corresponding alignment features of at least one other component of the first temperature-controlled housing.

[0019] In some embodiments, the first temperature-controlled enclosure may further include at least one thermocouple coupled to the third surface of the second enclosure portion.

[0020] In some embodiments, the at least one thermocouple may include: a first thermocouple connected to the third surface of the second housing portion and located at a position overlapping the first channel in the first direction; and a second thermocouple connected to the third surface of the second housing portion and located at a position overlapping a second channel formed in a fourth surface of the second housing portion. The second channel may be configured to accommodate a portion of the third conduit therein.

[0021] In some embodiments, the fourth surface of the second housing portion may include a protrusion extending in the first direction, the second housing portion may include a second through hole extending from the third surface through the protrusion, the second through hole may be configured to accommodate a second fastener passing therethrough, and the second fastener may be configured to engage with the first portion to structurally connect the first temperature control housing to the first portion.

[0022] In some embodiments, the first housing portion can include a third through-hole extending between the first surface and the second surface, and the third through-hole can be configured to receive a protrusion in the fourth surface of the second housing portion therethrough.

[0023] In some embodiments, the first fluid interface assembly can further include one or more thermal insulators that can be configured to at least partially thermally insulate the first portion from the first temperature-controlled housing.

[0024] In some embodiments, the one or more thermal insulators may comprise quartz.

[0025] In some embodiments, the one or more thermal insulators may include a first thermal insulator disposed between the first housing portion and a first corresponding portion of the first part.

[0026] In some embodiments, the through hole in the first portion may extend along the axial direction, the through hole may include an opening extending in a direction transverse to the axial direction, and the first thermal insulator may abut against the first surface of the protrusion in the fourth surface of the second shell portion and the corresponding surface of the opening in the through hole in the first portion.

[0027] In some embodiments, the one or more thermal insulators may include a second thermal insulator disposed between the second housing portion and a second corresponding portion of the first portion.

[0028] In some embodiments, the second thermal insulator may include a first through-hole aligned with the second through-hole in the second housing portion, the first through-hole in the second thermal insulator may be configured to accommodate a second fastener therethrough, and the second thermal insulator may include one or more corresponding alignment features that may be configured to engage with the one or more alignment features on the third surface of the second housing portion.

[0029] In some embodiments, the first housing portion may include a fifth surface extending between the first and second surfaces, the second housing portion may include a sixth surface extending between the third and fourth surfaces, and the first fluid disconnect may abut the fifth and sixth surfaces.

[0030] In some embodiments, the first housing portion and the second housing portion can comprise aluminum.

[0031] In some embodiments, the second temperature-controlled housing may include a third housing portion and a fourth housing portion. The third housing portion may include a seventh surface and an eighth surface, the eighth surface being opposite the seventh surface in a second direction transverse to the axial direction and facing the second conduit in a first direction opposite the second direction. The fourth housing portion may be coupled to the third housing portion. The third housing portion may include a ninth surface and a tenth surface opposite the ninth surface in the first direction, the tenth surface facing the eighth surface in the second direction and including a second channel configured to receive a portion of the second conduit therein.

[0032] In some embodiments, the third housing portion may include a plurality of second openings located in the eighth surface, the fourth housing portion may include a plurality of second through-holes extending between the ninth and tenth surfaces, each of the second through-holes may be aligned with a corresponding second opening in the second openings, and the second temperature-controlled housing may further include a plurality of second fasteners. Each of the second fasteners may extend through a corresponding second through-hole in the second through-holes and may engage with a corresponding second opening aligned with the corresponding second through-hole.

[0033] In some embodiments, the fourth housing portion may include a first chamfered surface located on a first side of the ninth surface and a second chamfered surface located on a second side of the ninth surface. The first chamfered surface and the second chamfered surface may extend between the ninth surface and the tenth surface. The second temperature-controlled housing may further include at least one thermocouple connected to one of the first chamfered surface and the second chamfered surface.

[0034] In some embodiments, the at least one thermocouple can include a third thermocouple connected to the first chamfered surface and a fourth thermocouple connected to the second chamfered surface.

[0035] In some embodiments, the tenth surface of the fourth housing portion may include a protrusion extending in the second direction, the fourth housing portion may include a fourth through hole extending from the ninth surface through the protrusion, the fourth through hole may be configured to accommodate a third fastener passing therethrough, and the third fastener may be configured to engage with the second portion to structurally connect the second temperature-controlled housing to the second portion.

[0036] In some embodiments, the third housing portion can include a fifth through-hole extending between the seventh surface and the eighth surface, and the fifth through-hole can be configured to receive the protrusion in the tenth surface of the fourth housing portion therethrough.

[0037] In some embodiments, the second fluid interface assembly can further include one or more thermal insulators configured to at least partially thermally insulate the second portion from the second temperature-controlled housing.

[0038] In some embodiments, the one or more thermal insulators may include quartz.

[0039] In some embodiments, the one or more thermal insulators may include a third thermal insulator disposed between the fourth housing portion and the first corresponding portion of the second section.

[0040] In some embodiments, the recessed area of ​​the second portion may include a first recessed area, a second recessed area further recessed into the second portion than the first recessed area, and a support surface extending between the first recessed area and the second recessed area. The fourth housing portion may have a T-shape in a view transverse to the axial direction, including a web portion extending in the axial direction and a flange portion extending in a direction transverse to the axial direction. The third thermal insulator may be stacked between the support surface of the recessed area and each of the first surface of the flange portion of the fourth housing portion and the protrusion in the tenth surface of the fourth housing portion.

[0041] In some embodiments, the third thermal insulator may include a C-shaped structure at least partially surrounding the web portion of the fourth housing portion.

[0042] In some embodiments, the one or more thermal insulators can include a fourth thermal insulator disposed between the fourth housing portion and the second corresponding portion of the second section.

[0043] In some embodiments, the fourth thermal insulator can include a second through-hole aligned with the fourth through-hole in the fourth housing portion, and the second through-hole in the fourth thermal insulator can be configured to receive the third fastener therethrough.

[0044] In some embodiments, the third thermal insulator can be stacked between the fourth thermal insulator and a support surface extending between the first and second recessed areas of the second portion.

[0045] In some embodiments, the third housing portion may include an eleventh surface extending between the seventh and eighth surfaces, the fourth housing portion may include a twelfth surface extending between the ninth and tenth surfaces, and the second fluid disconnect may abut the eleventh and twelfth surfaces.

[0046] In some embodiments, the third housing portion and the fourth housing portion can comprise aluminum.

[0047] In some embodiments, the first fluid disconnect may include a first body having a first surface, the second fluid disconnect may include a second body having a second surface facing the first surface in an axial direction, at least one of the first body and the second body may include a first blind hole concentrically aligned with the first conduit and the second conduit, and the first blind hole may include a gasket that can be at least partially pressed between the first body and the second body in the first configuration and can fluidly seal the first fluid passage between the first body and the second body.

[0048] In some embodiments, at least one of the first body and the second body may further include a second blind hole concentrically aligned with the third conduit and the fourth conduit, and the second blind hole may include a gasket that can be at least partially pressed between the first body and the second body in the first configuration and can fluidly seal the second fluid passage between the first body and the second body.

[0049] In some embodiments, at least one of the first body and the second body may further include one or more leak detection grooves fluidly connected to the first blind hole and the second blind hole.

[0050] In some embodiments, the second end of the first conduit can be fluidly connected to a gas distributor, and the second end of the second conduit can be fluidly connected to a precursor source.

[0051] In some embodiments, the first portion may form a lid of a semiconductor processing chamber.

[0052] In some embodiments, the first portion and the second portion can include aluminum.

[0053] In some embodiments, the precursor source can be an intermediate source, which can be configured to maintain the precursor in a liquid phase during storage.

[0054] In some embodiments, the intermediate source can include a vaporizer, which can be configured to flow the precursor as a vapor into the first fluid passage.

[0055] In some embodiments, the intermediate source may be positioned at a lower elevation than the semiconductor processing chamber.

[0056] In some embodiments, the intermediate source may be fluidly connected to a centralized source of a precursor, and the intermediate source may be further configured to replenish the supply of the precursor from the centralized source.

[0057] In some embodiments, the concentrated source may be positioned at a lower elevation than the intermediate source.

[0058] In some embodiments, the intermediate source may be supported on the floor of the fabrication facility, while the concentrated source may be supported below the floor of the fabrication facility.

[0059] The foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the claimed subject matter. BRIEF DESCRIPTION OF THE DRAWINGS

[0060] Various embodiments disclosed herein are illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings in which like references refer to similar elements.

[0061] Figure 1 and Figure 2A semiconductor processing system is schematically illustrated that can be used not only to process semiconductor wafers but also to thermally control disconnects, according to some embodiments.

[0062] Figure 3 A process chamber according to some embodiments is schematically illustrated.

[0063] Figure 4 Schematically illustrates a Figure 1 and Figure 2 Part of the fluid delivery network of a semiconductor processing system.

[0064] Figure 5 A partially exploded perspective view of a portion of a processing chamber including a thermally controlled disconnect is schematically illustrated, according to some embodiments.

[0065] Figure 6 and Figure 7 Schematically illustrates a Figure 5 First and second orthographic detail views of a portion of a processing chamber.

[0066] Figure 8 Schematically illustrates a Figure 5 Partial cross-section of the processing chamber.

[0067] Figure 9 and Figure 10 Schematically illustrates a Figure 5 Perspective and orthographic views of a portion of a first portion of a processing chamber.

[0068] Figure 11 and Figure 12 Schematically illustrates a Figure 5 A partial perspective and orthographic view of a second portion of the processing chamber.

[0069] Figure 13 and Figure 14 Schematically illustrates a Figure 5 A perspective view of the thermal disconnect.

[0070] Figure 15 Schematically illustrates a Figure 5 Exploded perspective view of a first fluid interface assembly of a thermal disconnect.

[0071] Figure 16 Schematically illustrates a Figure 5 Exploded perspective view of a second fluid interface assembly of a thermal disconnect.

[0072] Figure 17-21 Schematically illustrates a Figure 15 Various views of the second housing portion of the first fluid interface assembly.

[0073] Figure 22 Schematically illustrates a Figure 15 A perspective view of a first housing portion of a first fluid interface assembly.

[0074] Figure 23 and Figure 24 Schematically illustrates a Figure 15 Various views of the second thermal insulator of the first fluid interface assembly.

[0075] Figure 25 Schematically illustrates a Figure 15 A perspective view of a first thermal insulator of a first fluid interface assembly.

[0076] Figure 26 and Figure 27 Schematically illustrates a Figure 15 A perspective view and an orthographic projection of a first fluid disconnect component of a first fluid interface assembly.

[0077] Figure 28-32 Schematically illustrates a Figure 16 Various views of the fourth housing portion of the second fluid interface assembly.

[0078] Figure 33 Schematically illustrates a Figure 16 A perspective view of the third housing portion of the second fluid interface assembly.

[0079] Figure 34 Schematically illustrates a Figure 16 Perspective view of the third thermal insulator of the second fluid interface assembly.

[0080] Figure 35 Schematically illustrates a Figure 15 and Figure 16 A partial perspective view of a cartridge heater of at least one of the first and second fluid interface assemblies.

[0081] Figure 36 and Figure 37 Schematically illustrates a Figure 16 A perspective view and an orthographic projection of a second fluid disconnect member of a second fluid interface assembly.

[0082] Figure 38 and Figure 39 Schematically illustrates a Figure 5A perspective view of third and fourth fluid disconnects of a semiconductor processing chamber.

[0083] Figure 40 A multi-station processing tool is schematically illustrated according to some embodiments. DETAILED DESCRIPTION

[0084] In the following description, numerous specific details are set forth to provide a thorough understanding of various embodiments. The disclosed embodiments may be practiced without some or all of these specific details. In other instances, well-known process operations are not described in detail to avoid unnecessarily obscuring the disclosed embodiments. Although the disclosed embodiments will be described in conjunction with specific embodiments, it will be understood that this is not intended to limit the disclosed embodiments.

[0085] In this application, the terms "semiconductor wafer," "wafer," "substrate," "wafer substrate," and "partially fabricated integrated circuit" are used interchangeably. One of ordinary skill in the art will understand that the term "partially fabricated integrated circuit" can refer to a silicon wafer during any of many stages of integrated circuit fabrication. Wafers or substrates used in the semiconductor device industry typically have a diameter of 200 mm, 300 mm, or 450 mm. In addition to semiconductor wafers, other workpieces that can utilize the disclosed embodiments include a variety of articles of manufacture, such as printed circuit boards, magnetic recording media, magnetic recording sensors, mirrors, optical components, micromechanical devices, and the like. background

[0086] As previously mentioned, various semiconductor manufacturing processes (e.g., atomic layer deposition (ALD), atomic layer etching (ALE), chemical vapor deposition (CVD), chemical vapor etching (CVE), and the like, and plasma-enhanced versions thereof) may employ at least one vapor delivery system in which vapor-phase precursors, and sometimes gaseous precursors, react with and / or on a substrate surface to deposit material thereon or remove material therefrom. While many forms of vapor delivery systems exist, they are generally configured to provide controlled gas flow, vaporization, and delivery of precursors that may otherwise be in a liquid or solid phase under ambient temperature and atmospheric pressure conditions. While the direct transition from a solid phase to a vapor phase is technically a sublimation process, as used herein, the term "vaporization" is used to refer to the transition from a solid or liquid phase to a vapor phase. The phase difference between the storage and supply of precursors presents numerous challenges, hindering efforts to prevent undesirable condensation, deposition, etching, particle generation, etc., in and / or resulting from at least the delivery piping of the vapor delivery system.

[0087] For example, vapor delivery systems typically use a vaporizer, such as a heated vessel, to convert a precursor from a liquid or solid phase to a vapor phase. As part of processing a substrate, a vapor precursor may flow into a process volume through one or more delivery tubes, which are typically heated at one or more points. For example, portions of the delivery tubes may be heated by at least one of the following methods: using a flexible polymer heating jacket having one or more resistive heating elements or via heating tape. In some cases, the heating tape and / or jacket may be covered with a wrapping insulating material to reduce heat loss. Although injecting heat energy into the delivery tubes and insulating them can help prevent condensation, deposition, etc. of the vapor precursor in the delivery tubes, some portions of the delivery tubes may be routed through confined spaces that are not adaptable to conventional heating and insulation techniques. In some cases, such spaces may be sensitive to external heat (or may be adjacent to spaces that are sensitive to external heat).

[0088] Furthermore, the structural configuration and separability of the components that define some process chambers, as well as the purging of process gases between deposition and / or etching stages, further exacerbate the aforementioned issues. For example, some process chambers may include a removable roof that can be lifted away from the lower chamber portion to allow access to the interior. Therefore, the flow path of the gas delivery system, which spans at least the separable portion of the process chamber, is typically designed to be disconnectable without human intervention and may include one or more flexible hoses to accommodate different relative positions between process chamber components. Alternatively, the flow path may be double-enclosed, for example, comprising an inner tube that carries the medium and at least one outer tube that surrounds the inner tube to prevent accidental leakage from the inner tube. However, it is important to note that these disconnects are often routed through the aforementioned confined spaces, which are generally unsuitable for conventional heating and insulation techniques. Such configurations create temperature differentials that can create conditions that allow for undesirable condensation, deposition, etching, particle generation, etc., in and / or by the delivery tubes of the gas delivery system. It should be noted that the disconnects typically contact at least one of the removable roof and the lower chamber portion. Heating these disconnects may result in undesirable heat transfer to the processing chamber and may be, at least in part, a potential source of variation in process conditions and / or product structure, properties, etc.

[0089] Some semiconductor manufacturing tools may employ precursor supplies (e.g., ampoules filled with different chemicals) mounted above the split plane of a movable process chamber component to eliminate the aforementioned disconnects. Note, however, that once the resources within the ampoule are depleted, the ampoule is either discarded and replaced with a new one (thereby increasing waste), or refilled. In either case, replenishing the precursor supply results in downtime and increases the cost of supporting the various ampoules and associated semiconductor manufacturing tools. Accordingly, various embodiments are directed to providing efficient, cost-effective temperature control techniques and apparatus for controlling the temperature of precursors at various stages of supply and delivery to a process chamber, including in areas spanning a separable portion of the process chamber and in areas routed through confined spaces that would otherwise be inaccessible to conventional heating and insulation techniques. Semiconductor processing systems

[0090] Figure 1 and Figure 2 A semiconductor processing system is schematically illustrated that can be used not only to process semiconductor wafers but also to thermally control disconnects, according to some embodiments. Figure 3 Schematically illustrates a Figure 1 and Figure 2 processing chamber of a semiconductor processing system. Figure 4 Schematically illustrates a Figure 1 and Figure 2 Part of the fluid delivery network of a semiconductor processing system.

[0091] refer to Figure 1-4 , a semiconductor processing system (or system) 100 may include a process chamber 101 fluidly connected to a fluid delivery network (or system) 103. The process chamber 101 may include a first portion 105 and a second portion 107 movably connected to the first portion 105. In some embodiments, the first portion 105 may define a lower portion (or module) of the process chamber 101 in which at least one interior cavity region 109 may be formed, and the second portion 107 may define an upper (or lid) portion of the process chamber 101. At least one of the first portion 105 and the second portion 107 may be configured to translate in (or along) an axial direction, for example, parallel to (or substantially parallel to) the axis of the process chamber. Figure 1 and Figure 2 The direction of the Z axis is depicted in . Figure 1 and Figure 2As shown, at least one actuator (e.g., actuator 111) can be used to at least partially displace the second portion 107 in an axial direction along a plurality of support rails (e.g., support rails 113 and 115) of a support structure (or frame). In some cases, actuator 111 can be any suitable mechanism capable of causing linear movement, such as a stepper motor, a servo motor, etc., which is coupled to at least one of the processing chamber 101 and the support structure, but embodiments are not limited thereto. For example, in some implementations, the second portion 107 can be lifted off the first portion 105 by an integrated or detachable tool lift, a crane, a robotic arm, etc. Further, the support structure can be configured to support the processing chamber 101 at a higher position from, for example, a floor 117 of a manufacturing facility. Accordingly, the support rails of the support structure (e.g., support rails 113 and 115) can be laterally reinforced by one or more lateral and / or cross supports (e.g., lateral supports 119 and 121).

[0092] Temporary reference Figure 3 , some additional features of the processing chamber (or chamber) 101 will now be described. As described, the chamber 101 can be divided into a first portion 105 and a second portion 107 movably connected to the first portion 105. In a first position, state, or configuration, as Figure 1 and Figure 3 As shown, the first portion 105 and the second portion 107 can be connected together to enclose a space at least partially defined by the inner cavity area 109. In the second position, state or configuration, as shown Figure 2 As shown, the second portion 107 can be lifted off the first portion 105 to allow access to at least the interior cavity region 109. The center post can be configured to support the susceptor 301 within the interior cavity region 109 while, for example, the surface of the wafer 303 is being processed (e.g., while a film is being formed on the surface of the wafer 303, while features are being etched on the surface of the wafer 303 or in a structure formed on the surface of the wafer 303, etc.).

[0093] According to some embodiments, the pedestal 301 may be or include a powered electrode. Thus, the pedestal 301 may be electrically coupled to a power supply 305 via a matching network 307. To this end, the power supply 305 may be controlled by a control module (or controller) 309. In some implementations, power may be provided to the gas distributor 311 in place of or in addition to providing power to the pedestal 301. The control module 309 may be configured to operate various aspects of the system 100 by executing one or more sequences of one or more instructions defining at least one process recipe. Thus, the control module 309 may set various operational inputs defining a process recipe, such as power levels, pressurization levels, timing parameters, process gases, precursor supply, mechanical movement of the wafer 303, the height of the wafer 303 from the pedestal 301, thermal control of one or more components of the chamber 101 (e.g., thermal control disconnect 131), and the like.

[0094] According to some embodiments, the center column may include a lift pin mechanism communicatively coupled to lift pins. The lift pin mechanism, and therefore the lift pins, may be controlled by lift pin control signals from, for example, a control module 309. The lift pins may be used to lift wafer 303 off pedestal 301 to allow an end effector to pick up wafer 303 and lower wafer 303 after placement by the end effector. In some embodiments, the lift pins may be part of the center column. To this end, chamber 101 may include a chamber transfer port 310 through which an end effector may introduce wafer 303 into or remove wafer 303 from chamber 101. In some cases, relative displacement between pedestal 301 and gas distributor 311 may be used to provide a controlled spacing between wafer 303 and a surface of gas distributor 311 facing wafer 303. The controlled spacing between wafer 303 and the surface of gas distributor 311 may also be configured to control the size of process volume 313, into which at least a gaseous precursor may be dispensed via gas distributor 311. The chamber 101 may also include openings 106 and 108 through which portions of the base 301 and the gas distributor 311 (e.g., stems of the base 301 and the gas distributor 311) extend. Although the gas distributor 311 is shown as having a showerhead configuration, embodiments are not limited thereto. For example, the gas distributor 311 may be formed as a top plate and thus incorporated as part of the second portion 107 of the chamber 101. Any other suitable form of gas distributor may be used; however, for convenience, the gas distributor 311 will be described as having a showerhead configuration.

[0095] The system 300 may also include one or more fluid sources 315, such as a gas chemical supply and / or a purge (e.g., inert) gas from a facility. Depending on the process being performed, the control module 309 may control the delivery of one or more gases from the fluid source 315, as will become more apparent below. The one or more gases may be distributed to at least the process volume 313 via a gas distributor 311. In some embodiments, a gas manifold 317 may be fluidly interposed between the fluid source 315 and the gas distributor 311. Appropriate valves and mass flow control mechanisms may be employed and controlled by the control module 309 to ensure that appropriate gases are delivered during, for example, the deposition, etching, and / or plasma treatment phases of the process. To this end, a gas flow may be provided to the gas manifold 317 via a thermally controlled disconnect 131, as will become more apparent below. In this manner, gas may flow from the gas supply manifold 317 into the gas distributor 311 and be output from the gas distributor 311 as a gas flow 319. Gas flow 319 may be distributed in region (process volume) 313, which may be formed between wafer 303 and respective surfaces of gas distributor 311. Although shown as a rectangular region, region 313 may be more like a fuzzy, cloud-like region in which, for example, plasma may be generated and / or one or more process gases, purge gases, or both process and purge gases may flow. In some cases, gas flow 319 may include one or more gaseous precursors that are in a solid or liquid phase under the ambient temperature and pressure conditions of the fabrication facility. Figure 1 、 2 and 4 describe in more detail the delivery of one or more process gases, purge gases, or both process and purge gases.

[0096] refer to Figure 1 、 2 4, vapor delivery network (or system) 103 can be configured to supply one or more gaseous precursors to at least one gas distributor, such as gas distributor 311, by vaporizing the precursor (which is in liquid or solid phase under ambient temperature and pressure conditions). For convenience, liquid or solid precursors will be referred to as precursors or solid-phase precursors hereinafter, but it should be understood that liquid-phase precursor embodiments are also included. In some implementations, the solid-phase precursor can be stored in a bulk storage (or tank) 401, which can include one or more heaters (e.g., heater 403) configured to convert and / or maintain the solid-phase precursor in a liquid state for delivery to an intermediate source (or supply source) 405. In some cases, heater 403 can be configured to heat the precursor to a first temperature or within a first temperature range T1. Note that the bulk reservoir 401 may also be referred to as a centralized source of one or more precursors and may be fluidly connected to one or more intermediate sources associated with one or more semiconductor processing tools (or modules) (e.g., processing chamber 101 or a station of a multi-station tool 4000).

[0097] According to some embodiments, bulk reservoir 401 can be positioned at a lower elevation than at least one of process chamber 101 and intermediate source 405. For example, bulk reservoir 401 can be positioned and / or supported below, for example, floor 117 of a fabrication facility, and intermediate source 405 can be supported on or above floor 117. In some cases, intermediate source 405 can be positioned below a partitioning plane 407 of process chamber 101 or below a plane 409, which can represent a plane tangent to at least the lowest surface of second portion 107 of process chamber 101. Note that partitioning plane 407 can represent a plane tangent to at least one contact interface between first portion 105 and second portion 107 of process chamber 101.

[0098] The push gas source 411 can be configured to supply one or more push gases (e.g., one or more inert gases, such as argon, helium, neon, nitrogen, and / or the like) to at least the bulk reservoir 401 via valve 413 to force or otherwise facilitate the flow of the liquid precursor to the intermediate source 405 via one or more delivery tubes (e.g., delivery tubes 415 and 417). For the purposes of the present invention, the inert gas can be a gas that is non-reactive with the precursors and / or counter-reactants of the relevant semiconductor process. In some cases, a gas scavenger 419 can be fluidly interposed between the push gas source 411 and the bulk reservoir 401. The gas scavenger 419 can be configured to remove contaminants, such as oxygen, moisture, hydrocarbons, etc., from the push gas flow between the push gas source 411 and the bulk reservoir 401. In this manner, the gas sweeper 419 may include any suitable number of traps, filters, catalytic materials, indicators, sensors, etc. to prevent or at least reduce the diffusion of actual and / or potential contaminants into the push gas stream and maintain gas purity levels. As part of operation, push gas may be supplied to the vapor space 421 of the bulk reservoir 401 via the valve 413 to at least partially cause some of the liquid precursor 423 to flow out of the bulk reservoir 401 and into the intermediate source 405.

[0099] The flow of liquid precursor to the intermediate source 405 can also be controlled or otherwise facilitated by actuation of one or more other valves (e.g., valves 425 and 427), pumps, and the like. While valve 413 can provide an inlet valve control function capable of controlling the flow of push gas into the bulk reservoir 401, valve 425 can provide an outlet control function for regulating the flow of liquid precursor from the bulk reservoir 401. It should also be noted that valve 427 can be used to selectively fluidly connect the delivery tube 417 to a vacuum 429, which can be used to purge the delivery tube 417 before and / or after supplying the liquid precursor to the intermediate source 405. The bulk reservoir 401 can also include a drain (or vent) 431 to prevent the buildup of excess pressure and / or vacuum in the vapor space 421, which can be caused by, for example, changes in liquid precursor levels, changes in ambient temperature conditions, heating of the bulk reservoir 401, and the like.

[0100] According to some embodiments, the intermediate source 405 may be heated via one or more heaters (e.g., heater 433) to maintain the intermediate supply 435 of the precursor in a liquid phase. In some cases, the heater 433 may be configured to heat the intermediate supply 435 to a second temperature or within a second temperature range T2. The second temperature (or temperature range) T2 may be greater than the first temperature (or temperature range) T1, but embodiments are not limited thereto. In some cases, the storage space 437 of the intermediate source 405 may be pressurized with an inert gas, which may be the same or different from the propulsion gas of the propulsion gas source 411. It should also be noted that the delivery tube 417 between the bulk reservoir 401 and the intermediate source 405 may be heated, for example, by a heating jacket 439 (e.g., a flexible polymer heating jacket) to maintain the liquid precursor flowing therein, but embodiments are not limited thereto. The heating jacket 439 may be configured to heat the liquid precursor to a third temperature or within a third temperature range T3. The third temperature (or temperature range) T3 may be greater than or equal to the first temperature (or temperature range) T1 and less than or equal to the second temperature (or temperature range) T2, but the embodiment is not limited thereto.

[0101] In some implementations, a flow controller (e.g., a liquid flow controller) of the intermediate source 405 or a flow controller associated therewith (e.g., a liquid flow controller) can be used to regulate the flow rate (e.g., mass flow rate) of the liquid precursor from the bulk reservoir 401 to the intermediate source 405 and from the storage space 437 to the vaporizer (or vaporizers). Although the vaporizer 441 is shown as part of the intermediate source 405, embodiments are not limited thereto. It should also be noted that the flow controller can be configured to control the operation of one or more of the propulsion gas source 411, valves 413, 425, and 427, and / or the vaporizer (or vaporization point) 441. To this end, the flow controller can be configured to receive feedback information (e.g., at least one of temperature, pressure, volume flow rate, etc.) from one or more sensors disposed at various points in and / or along the bulk reservoir 401, the delivery tube 417, the storage volume 437, and / or the vaporizer 441. This feedback information can be used to regulate the flow of the liquid precursor from the bulk reservoir 401 to the intermediate source 405 and from the storage volume 437 to the vaporizer 441. In some cases, the flow controller can be configured to withdraw from the bulk reservoir 401 and / or replenish the intermediate supply 435 with precursor from the bulk reservoir 401 in any suitable manner (e.g., on demand, scheduled, and / or random) and / or based on any suitable information (e.g., supply level information related to the amount of the intermediate supply 435 in the storage volume 437).

[0102] The vaporizer 441 can be configured to convert at least some of the precursors corresponding to the intermediate supply 435 into a gaseous phase or gaseous state for supply to the gas distributor 111 of the processing chamber 101. In some embodiments, the vaporizer 441 can be a heated vaporizer. For example, one or more surfaces of the vaporizer 441 can be heated to a fourth temperature or a fourth temperature range T4 that is higher than the vaporization temperature of the precursor being utilized. The fourth temperature (or temperature range) T4 can therefore be greater than the second temperature (or temperature range) T2. Therefore, the gaseous precursor can be delivered to the gas manifold 443 via delivery tubes 445 and 447. In order to prevent or at least reduce the possibility that the gaseous precursor output from the vaporizer 441 condenses and may react with incompatible gases or materials in downstream components, at least the delivery tubes 445, 447, and 449 can be heated to a temperature higher than the vaporization temperature of the precursor flowing therethrough. In some implementations, heating jackets 451, 453, and 455 may be used to control the temperature of and / or the temperature within delivery tubes 445, 447, and 449, respectively, but embodiments are not limited thereto. In some implementations, heating jackets 451, 453, and 455 may be configured to heat delivery tubes 445, 447, and 449 to at least fifth, sixth, and seventh temperatures, or within fifth, sixth, and seventh temperature ranges T5, T6, and T7, respectively. In some embodiments, the fifth temperature (or temperature range) T5 may be greater than the fourth temperature (or temperature range) T4, the sixth temperature (or temperature range) T6 may be greater than the fifth temperature (or temperature range) T5, and the seventh temperature (or temperature range) T7 may be greater than the sixth temperature (or temperature range) T6. It is also contemplated that the temperature of gas manifold 443 may be controlled by one or more heaters (e.g., heater 457). The heater 457 may be configured to heat at least the gas manifold 443 to an eighth temperature or an eighth temperature range T8 , which may be between the sixth temperature (or temperature range) T6 and the seventh temperature (or temperature range) T7 .

[0103] According to various embodiments, the delivery tubes 445 and 447 can be connected to one or more delivery tubes and disconnects (collectively, fluid interface assembly 459) that are routed through one or more narrow spaces in (or adjacent to) the first portion 105 and / or the second portion 107 of the processing chamber 101. These spaces may not be suitable for conventional heating and insulation techniques. Therefore, the temperature of the fluid interface assembly 459 can be controlled by one or more temperature-controlled housings (in Figure 4The temperature control housing 461 is collectively referred to as the temperature control housing 461 in the specification and is regulated (e.g., controlled to be higher than the vaporization temperature of the precursor flowing therethrough). The temperature control housing may be or include, for example, a sleeve, a pipe, or a closed channel through which one or more conduits can pass. In some cases, the fluid interface assembly 459 may include a first fluid interface assembly 123 having a first temperature control housing 125 and a second fluid interface assembly 127 having a second temperature control housing 129. The combination of the first fluid interface assembly 123 having at least one of the first temperature control housing 125 and the second temperature control housing 129 and the second fluid interface assembly 127 may be considered a thermal control disconnect, which is numbered 131. Figure 5-37 An exemplary fluid interface assembly and an illustrative temperature-controlled housing are described in greater detail, along with some areas in which the fluid interface assembly and the temperature-controlled housing may be arranged and / or positioned.

[0104] Before discussing examples of fluid interface assembly 459 and temperature controlled housing 461, note that a vapor-phase precursor can flow from vaporizer 441 to gas manifold 443, which can include at least one charge volume (or plenum) 463. The vapor-phase precursor received in plenum 463 can, in some cases, be diluted or otherwise mixed with one or more controlled streams of gas 465 (which can be provided, for example, by one or more delivery tubes and disconnects (in the embodiment of FIG. Figure 4 4 and 5. In some embodiments, the fluid interface assembly 467 is supplied to the plenum 463 for mixing. In some embodiments, the gas 465 can be one or more inert gases and / or one or more other types of process gases, which in some embodiments are in a gaseous state under ambient temperature and pressure conditions. Similar to the fluid interface assembly 459, the fluid interface assembly 467 can span the dividing plane 407 of the processing chamber 101. Nevertheless, the fluid interface assembly 467 can be non-temperature controlled, but the embodiment is not limited to this. For example, each of the fluid interface assemblies 459 and 467 can be temperature controlled; however, in order to provide a contrast between temperature-controlled and non-temperature-controlled variations, the fluid interface assembly 467 will be assumed and described as not having a temperature-controlled configuration. In some embodiments, the fluid interface assembly 467 can include a third fluid interface assembly 133 and a fourth fluid interface assembly 135.

[0105] According to some embodiments, the gas manifold 443 can be configured to flow process gases (which may include at least some precursors in a gas phase) from the plenum 463 to the gas distributor 311. The gas distributor 311 can be configured to distribute the process gases within the process volume (or area) 313 and thus toward the wafer 303 associated with at least one semiconductor process. Figure 3As shown, wafer 303 can be positioned below gas distributor 311 and, in some cases, can be supported by susceptor 301. Gas distributor 311 can have any suitable shape and any suitable number and arrangement of gas distribution ports configured to distribute process gases to process volume 313.

[0106] In various implementations, process gases and / or purge gases can exit the processing chamber 101 via an exhaust port (or outlet) 321 fluidly coupled to, for example, a vacuum pump 323, which can be a single-stage or two-stage mechanical dry pump and / or a turbomolecular pump. In this manner, process gases and / or purge gases can be pumped out of the processing chamber 101 to maintain a suitable low-pressure environment therein. To this end, a closed-loop flow restriction device, such as a throttle valve or a pendulum valve, can be controlled by the control module 309 to further ensure a suitable low-pressure environment within the processing chamber 101. In some cases, fluid within the delivery tube 447 can be pumped to, for example, an exhaust 137 via a diverting flow path 139, which can include one or more conduits forming part of a fluid interface assembly 459. The exhaust 137 can be a scrubbed exhaust. In some cases, the temperature of the one or more conduits of the diverting flow path 139 can be controlled by a temperature-controlled housing 461, as will become more apparent below. This can prevent or at least reduce the likelihood of undesirable condensation, deposition, etching, particle generation, etc., in and / or by the diverting flow path 139 and the components forming the drain 137. Fluid within the delivery tube 469 can be pumped, for example, to the drain 137 via the diverting flow path 141, which can include one or more conduits forming part of the fluid interface assembly 467, as will become more apparent below. The one or more conduits of the diverting flow path 141 can be non-temperature controlled, but embodiments are not limited thereto.

[0107] According to some embodiments, the processing chamber 101 may further include one or more liners (or shields) that form a substrate for one or more interior surfaces of the processing chamber 101. The liner may be formed of a metal or metal alloy (e.g., aluminum or an aluminum alloy), but the embodiments are not limited thereto. The liner may be configured to be removed during maintenance of the processing chamber 101 to prevent (or at least reduce) accumulation of material (e.g., metallic material) on the walls of the processing chamber 101. In some cases, the processing chamber 101 may be at least partially arranged in a second configuration, such as Figure 2 As shown, the inner chamber region 109 can be accessed to remove, replace, and / or clean the liner. Further, the one or more liners can also be configured to reduce heat transfer to and from the walls of the process chamber 101 to help stabilize the internal temperature of the process chamber 101. In addition, the liner can serve as a sacrificial layer configured to prevent (or reduce) damage to the process chamber 101.

[0108] In various implementations, system 300 may include or be in communication with thermal system 325, which may be configured to actively control the temperature of one or more of susceptor 301, gas distributor 311, and thermal disconnect 131. In some cases, thermal system 325 may also be configured to actively control the temperature of one or more of gas supply manifold 317, fluid source 315, and heaters 403, 433, 439, 451, 453, and 455. For example, thermal system 325 may be configured to control one or more aspects associated with one or more thermal control elements (e.g., heating elements, cooling tubes, and / or the like of susceptor 301, gas distributor 311, thermal disconnect 131, gas supply manifold 317, fluid source 315, and heaters 403, 433, 439, 451, 453, and 455). In some implementations, control module 309 may control the operation of thermal system 325, although embodiments are not limited thereto.

[0109] Now combine Figure 1-12 Additional aspects of the processing chamber 101 and the thermal disconnect 131 are discussed in greater detail.

[0110] Figure 5 A partially exploded perspective view of a portion of a processing chamber including a thermally controlled disconnect is schematically illustrated, according to some embodiments. Figure 6 and Figure 7 Schematically illustrates a Figure 5 First and second orthographic detail views of a portion of a process chamber. Figure 8 Schematically illustrates a Figure 5 A partial cross-sectional view of the processing chamber. Figure 9 and Figure 10 Schematically illustrates a Figure 5 A partial perspective view and an orthographic projection of a first portion of a processing chamber. Figure 11 and Figure 12 Schematically illustrates a Figure 5 A partial perspective view and an orthographic projection of a second portion of the processing chamber.

[0111] refer to Figure 1-12 The processing chamber 101 may include a first portion 105 and a second portion 107, wherein the second portion 107 is in a first configuration (eg Figure 1 、 5 and 8) are movably connected to the first portion 105 and can be spaced apart from each other in a second configuration (e.g. Figure 2). For purposes of the present invention, "movably connected" may include a tangential or coincident fit (or abutment) between two or more components having mutually complementary shapes such that the physical interface between the two or more components can be connected / disconnected when, for example, at least one of the two or more components is displaced relative to the other component. For example, some process chambers may include a removable top that can be lifted away from the lower chamber portion to allow access to the interior space. Given the ability to separate the first portion 105 from the second portion 107, the process chamber 101 may include one or more fluid interface assemblies, such as fluid interface assemblies 459 and 467, that allow flow paths of the gas delivery system 103 across at least one dividing plane 407 of the process chamber 101 to be connected and disconnected from each other. At least some of the fluid interface components (e.g., the first fluid interface component 123 and the second fluid interface component 127) can be thermally controlled (e.g., heated) by, for example, one or more temperature-controlled housings (e.g., the first temperature-controlled housing 125 and the second temperature-controlled housing 129) to prevent or at least reduce the possibility of undesirable condensation, deposition, etching, particle generation, etc. in and / or caused by the flow paths associated therewith.

[0112] According to some embodiments, fluid interface assemblies (e.g., first through fourth fluid interface assemblies 123, 127, 133, and 135) can be routed through one or more confined spaces in or associated with process chamber 101 (e.g., region 501 in second portion 107 and at least one of regions 503 and 505 in first portion 105) that may not accommodate conventional heating and insulation techniques. For example, first and third fluid interface assemblies 123 and 133 can be routed through region 501 in second portion 107. Region 501 can be a through-hole extending in an axial direction (e.g., a direction parallel to or substantially parallel to the Z-axis) from first (e.g., upper) surface 901 of second portion 107 through second (e.g., lower) surface 903 of second portion 107. At least one peripheral surface (e.g., peripheral (e.g., front) surface 905) can extend between first surface 901 and second surface 903. In some cases, the first inner surface 601 of the region 501 can be offset from the outer peripheral surface 905 by a distance 603 in a first direction. The first direction can be transverse to the axial direction and, in some cases, can be parallel or substantially parallel to the Y-axis direction. The region 501 can have dimensions 907, 909, and 1001 in the axial direction, the first direction, and the second direction. The second direction can also be transverse to the axial direction and, in some implementations, can be parallel or substantially parallel to the X-axis direction.

[0113] As will become more apparent below, when the first fluid interface assembly 123 is assembled as part of the second portion 107 of the process chamber 101, multiple exterior surfaces of the first temperature-controlled enclosure 125 can be offset from corresponding interior surfaces of the region 501, such as the first, second, and third interior surfaces 601, 605, and 607. For example, the first and second exterior surfaces 609 and 611 can be offset from the first and second interior surfaces 601 and 605 of the region 501 by distances 615 and 617, respectively, which can extend in a first direction. The third exterior surface 613 can be offset from the third interior surface 607 of the region 501 by a distance 619, which can extend in a second direction. In some implementations, the region 501 can include a step 621 defining a fourth interior surface 623 of the region 501. The fourth interior surface 623 can be offset from the second exterior surface 611 of the first temperature-controlled enclosure 125 by a distance 625 in the first direction. Such a configuration can enable air gaps to be formed between various exterior surfaces of the first temperature-controlled enclosure 125 and corresponding interior surfaces of the region 501, which can provide some thermal insulation between the first temperature-controlled enclosure 125 and the second portion 107 of the process chamber 101. This can at least reduce the amount of conductive heat transfer from the first temperature-controlled enclosure 125 to the second portion 107 of the process chamber 101, and thus can at least reduce the likelihood that thermal energy from the first temperature-controlled enclosure 125 will affect process conditions within the process chamber 101.

[0114] According to some embodiments, the second portion 107 of the processing chamber 101 can also include an opening 911 extending in the first direction and fluidly connected to the region 501. As will become more apparent below, the opening 911 can expose a portion of the first fluid interface assembly 123, enabling the first fluid interface assembly 123 to be structurally connected to the second portion 107 via, for example, fasteners 507. The fasteners 507 can engage (e.g., threadedly engage) with the openings 1003 in the fourth inner surface 623 of the region 501. The fourth inner surface 623 can also include openings 1005, which can allow the third fluid interface assembly (or third fluid disconnect) 133 to be structurally connected to the second portion 107 of the processing chamber 101 via corresponding fasteners. In some cases, the second portion 107 can be formed with an inner cavity region 913, which, together with the inner cavity region 109, can define a space (or enclosure) including the first process volume 313 between the first portion 105 and the second portion 107 in the first configuration.

[0115] The first portion 105 of the processing chamber 101 may include a first region 503 and a second region 505, through which the second fluid interface assembly 127 and the fourth fluid interface assembly 135 may be disposed, respectively. In some embodiments, the first region 503 and the second region 505 may be corresponding recesses formed in a first surface 1101 of the first portion 105. The first surface 1101 of the first portion 105 may extend between a second surface 1103 and a third surface 1105 (which may be axially opposed to each other). In some cases, the second surface 1103 of the first portion 105 may form a contact interface with the second surface 903 of the second portion 107 in the first configuration of the processing chamber 101. At least one fluid seal may be provided between the second surfaces 1103 and 903 of the first portion 105 and the second portion 107 via at least one gasket disposed therebetween. For example, the second surface 1103 of the first portion 105 may include first and second recesses 1107 and 1109 configured to support the first and second gaskets therein. In some cases, first groove 1107 and second groove 1109 can be formed circumferentially around interior regions 109 and 913 of process chamber 101. It should also be noted that first groove 1107 can be surrounded by second groove 1109, and interior region 109 can include first (e.g., lower) chamber region 1111 and second (e.g., upper) chamber region 1113. Thus, when process chamber 101 is arranged in the first configuration, the first and second gaskets can be at least partially compressed at least partially within first groove 1107 and second groove 1109 and between first portion 105 and second portion 107 to form, for example, a fluid seal around interior regions 109 and 913.

[0116] like Figure 11 and Figure 12As shown, the first region 503 and the second region 505 may extend in the axial direction. The proximal ends of the first region 503 and the second region 505 may be fluidically connected to the third region 1201, which may be further recessed into the first portion 105 of the processing chamber 101 than the first region 503 and the second region 505. As such, the recessed surface 1115 of the third region 1201 may be positioned farther from the first surface 1101 of the first portion 105 than the recessed surfaces 1117 and 1119 of the first region 503 and the second region 505. In this manner, a support surface 1121 may be formed at the transition between the third region 1201 and the first region 503 and the second region 505. The distal ends of the first region 503 and the second region 505 may be fluidically connected to the fourth region 1203, which may be further recessed into the first portion 105 than the third region 1201, but embodiments are not limited thereto. In some configurations, a partition wall 1123 may be formed between the first region 503 and the second region 505, and thus each of the first region 503 and the second region 505 may be defined by at least three inner surfaces. For example, the first region 503 may be defined by first and second inner surfaces 1125 and 1127, and the concave surface 1117. In this manner, each of the first region 503 and the second region 505 may have a first dimension 1205 extending in the axial direction, a second dimension 1129 extending in the first direction, and a third dimension 1207 extending in the second direction.

[0117] As will become more apparent below, when the second fluid interface assembly 127 is assembled as part of the first portion 105 of the processing chamber 101, multiple exterior surfaces of the second temperature-controlled housing 129 can be offset from corresponding interior surfaces of the first region 503, such as the first and second interior surfaces 1125 and 1127 and the recessed surface 1117. For example, the first and second exterior surfaces 701 and 703 of the second temperature-controlled housing 129 can be offset from the first and second interior surfaces 1125 and 1127 of the first region 503, respectively, by distances 705 and 707, respectively, which can extend in the second direction. The third exterior surface 709 can be offset from the recessed surface 1117 of the first region 503 by a distance 711, which can extend in the first direction. In some implementations, the first through fourth regions 503, 505, 1201, and 1203 can be covered (or otherwise concealed) by a cover 509, which can be coupled (e.g., removably coupled) to the first portion 105 via a plurality of fasteners, such as, for example, fastener 511. The cover plate 509 may include a plurality of through-holes 513, through which fasteners 511 may extend and engage (e.g., threadedly engage) corresponding openings 1209 in the first portion 105 of the process chamber 101. As such, the fourth outer surface 713 of the second temperature-controlled housing 129 may be offset from the inner surface 715 of the cover plate 509 by a distance 717, which may extend in the first direction. This configuration may enable air gaps to be formed between the plurality of outer surfaces of the second temperature-controlled housing 129 and the corresponding inner surfaces of the first region 503 and the cover plate 509, which may provide some thermal insulation between the second temperature-controlled housing 129 and the cover plate 509. This may at least reduce the amount of heat conducted from the second temperature-controlled housing 129 to the first portion 105 of the process chamber 101, and thus at least reduce the likelihood that thermal energy from the second temperature-controlled housing 129 will affect process conditions within the process chamber 101.

[0118] According to some embodiments, and as will become more apparent below, the recessed surface 1115 of the third region 1201 of the first portion 105 of the process chamber 101 can include openings 1131 that enable the second fluid interface assembly 127 to be structurally connected to the first portion 105 via, for example, fasteners 515. In some cases, the fasteners 515 can engage (e.g., threadedly engage) the openings 1131 in the recessed surface 1115. Additionally, the recessed surface 1115 can also include openings 1133 to allow the fourth fluid interface assembly 135 to be structurally connected to the first portion 105 of the process chamber 101 via corresponding fasteners. Thermal disconnect

[0119] Figure 13 and 14 Schematically illustrates a Figure 5 A perspective view of the thermal disconnect. Figure 15 Schematically illustrates a Figure 5 Exploded perspective view of the first fluid interface assembly of the thermal disconnect. Figure 16 Schematically illustrates a Figure 5 Exploded perspective view of a second fluid interface assembly of a thermal disconnect.

[0120] refer to Figure 13-16 The thermal disconnect 131 may include a first fluid interface assembly 123 and a second fluid interface assembly 127, which may be coupled to the first portion 105 and the second portion 107 of the process chamber 101 via first and second fasteners 1301 and 1303. The first and second fasteners 1301 and 1303 may correspond to Figure 5 The first fluid interface assembly 123 may include a first fluid disconnect 1305, first and third conduits 1307 and 1309, a first temperature-controlled housing 1311, first and second thermal insulators 1313 and 1315, a first heating element 1317, and first and second thermocouples 1319 and 1321. The second fluid interface assembly 127 may include a second fluid disconnect 1323, a second and fourth conduits 1325 and 1327, a second temperature-controlled housing 1329, third and fourth thermal insulators 1331 and 1333, a second heating element 1335, and third and fourth thermocouples 1337 and 1339.

[0121] First temperature-controlled housing 1311 may include a first housing portion 1341 and a second housing portion 1343, which may be coupled to each other via one or more fasteners (e.g., fastener 1345). Second temperature-controlled housing 1329 may include a third housing portion 1347 and a fourth housing portion 1349, which may be coupled to each other via one or more fasteners (e.g., fastener 1351). First and second thermocouples 1319 and 1321 may be connected to second housing portion 1343 via one or more fasteners (e.g., fastener 1353). Third and fourth thermocouples 1337 and 1339 may be connected to fourth housing portion 1349 via one or more fasteners (e.g., fastener 1355). In some embodiments, a corresponding set of washers 1501 and locking washers 1503 may be disposed between the head of a corresponding fastener 1345 and second housing portion 1343, and a corresponding set of washers 1601 and 1603 may be disposed between the head of a corresponding fastener 1351 and fourth housing portion 1349. Respective sets of washers 1505 and locking washers 1507 can be positioned between the heads of corresponding fasteners 1353 and the respective connector portions 1509 of the first and second thermocouples 1319 and 1321. In a similar manner, corresponding sets of washers 1605 and locking washers 1607 can be positioned between the heads of corresponding fasteners 1355 and the respective connector portions 1609 of the third and fourth thermocouples 1337 and 1339. As will become more apparent below, threaded inserts (or bushings) 1511, 1513, and 1514 can be used in conjunction with fasteners 1345, 1353, and 1517, respectively, to provide a more durable connection. Similarly, threaded inserts (or bushings) 1611, 1613, and 1614 can be used in conjunction with fasteners 1351, 1355, and 1615, respectively, to provide a more durable connection. Other threaded inserts (or bushings) 1519 and 1617 may be used in conjunction with the second and fourth housing portions 1343 and 1349, respectively, to provide connection points for one or more optional ground wires.

[0122] According to some embodiments, first, second, third, and fourth housing portions 1341, 1343, 1347, and 1349 can be formed from any suitable material, such as any suitable thermally conductive material. For example, at least one of first, second, third, and fourth housing portions 1341, 1343, 1347, and 1349 can be formed from or include one or more of aluminum, aluminum nitride, beryllium oxide, brass, bronze, carbon, copper, gold, iron, silicon, silicon carbide, silver, steel, tungsten, zinc, and / or the like. In some cases, at least one of first, second, third, and fourth housing portions 1341, 1343, 1347, and 1349 can be formed from at least one base material and at least one coating having a higher thermal conductivity than the at least one base material. For example, the base material of at least one of the first, second, third, and fourth housing portions 1341, 1343, 1347, and 1349 may be aluminum and may be coated with, for example, aluminum nitride, but embodiments are not limited thereto. In some cases, additional coatings may be formed on surfaces associated with interfaces with one of the first, second, third, and fourth conduits 1307, 1325, 1309, and 1327, rather than on surfaces exposed to the surface of the processing chamber 101. It should also be noted that the first, second, third, and fourth housing portions 1341, 1343, 1347, and 1349 may be formed in any suitable manner, such as by additive manufacturing, casting, machining, stamping, and / or the like.

[0123] The first, second, third and fourth thermal insulators 1313, 1315, 1331 and 1333 may be formed of any suitable material, such as any suitable thermal insulation material. For example, at least one of the first, second, third and fourth thermal insulators 1313, 1315, 1331 and 1333 may be formed of carbon fiber, ceramic, insulon, or any other suitable material. TM , fiberglass, nylon, perlite, porcelain, one or more resins, rubber, silica, and / or the like, or include one or more of the following: 1. In some cases, at least one of the first, second, third, and fourth thermal insulators 1313, 1315, 1331, and 1333 may be formed from at least one base material and at least one coating having a lower thermal conductivity than the at least one base material. Regardless, the first, second, third, and fourth thermal insulators 1313, 1315, 1331, and 1333 may be formed in any suitable manner, such as by additive manufacturing, casting, dipping, molding, machining, stamping, braiding, and / or the like.

[0124] The first, second, third and fourth conduits 1307, 1309, 1325 and 1335 and the first and second fluid disconnects 1305 and 1323 of the system 400, as well as other conduits, connections, etc., can be formed from any suitable corrosion-resistant material (e.g., aluminum, brass, bronze, carbon steel, copper, stainless steel, titanium and / or the like).

[0125] Figure 17-21 Schematically illustrates a Figure 15 Various views of the second housing portion of the first fluid interface assembly.

[0126] refer to Figure 17-21 , the second housing portion 1343 can have a body formed as a generally rectangular prism, including a first surface 1701 (e.g., a surface facing away from the second portion 107 of the processing chamber 101 (when assembled therewith)) that is opposite to a second surface 1703 (e.g., a surface facing the second portion 107 (when assembled therewith)) in a first direction. Although the body of the second housing portion 1343 will be described as having a generally rectangular prism configuration, embodiments are not limited thereto. For example, the second housing portion 1343 can have any suitable geometric configuration, such as a generally cylindrical, generally prism-shaped, generally conical, generally polyhedral, and the like.

[0127] First and second surfaces 1701 and 1703 of second housing portion 1343 can be defined by one or more peripheral surfaces (e.g., peripheral surfaces (or surfaces) 1705, 1707, 1709, and 1711, which can be interconnected). Second surface 1703 can include one or more recessed portions (or channels), such as first recessed portion 1713 and second recessed portion 1715, configured to accommodate or otherwise interface with first conduit 1307 and third conduit 1309 when assembled with first temperature-controlled housing 1311. In some cases, one or more surfaces defining first recessed portion 1713 and second recessed portion 1715 can abut corresponding portions of first conduit 1307 and third conduit 1309 to facilitate heat transfer between second housing portion 1343 and first conduit 1307 and third conduit 1309. To this end, the respective contours of the first recessed portion 1713 and the second recessed portion 1715 may correspond to the respective contours of the first conduit 1307 and the third conduit 1309, thereby also promoting heat conduction between the second housing portion 1343 and the first conduit 1307 and the third conduit 1309. It should also be noted that in the assembled state of the first temperature-controlled housing 1311, the first conduit 1307 and the third conduit 1309 may be partially (or completely) accommodated in the first recessed portion 1713 and the second recessed portion 1715.

[0128] According to various embodiments, second surface 1703 of second housing portion 1343 may further include a plurality of first through-holes 1717, which may be configured to not only allow fasteners 1345 to pass therethrough, but also to enable first housing portion 1341 and second housing portion 1343 to be assembled together with first conduit 1307 and third conduit 1309 extending therebetween. While second housing portion 1343 is shown as including six first through-holes 1717, embodiments are not limited thereto. For example, second housing portion 1343 may include fewer than six first through-holes, such as one, two, three, four, etc., or may include more than six first through-holes, such as seven, eight, nine, ten, etc.

[0129] In some implementations, the body of the second housing portion 1343 can include openings 1718, 1719, and 1720 extending in the axial direction in the surface 1705. The opening 1719 can be configured to accommodate at least a portion of the first heating element 1317 therein. The size of the opening 1719 in a plane perpendicular to (or substantially perpendicular to) the axial direction can allow for clearance (or transition) fit with the first heating element 1317 when the first heating element 1317 is in a non-operating state. This can allow for differential expansion between the first heating element 1317 and the second housing portion 1343 when the first heating element 1317 is in an operating state. Thus, the opening 1718 can be used in conjunction with the fastener 1517 and the washer 1521 to limit axial displacement of the first heating element 1317 within the opening 1719, as shown in FIG. Figure 14As shown. For example, first heating element 1317 can be slidably received in opening 1719, and washer 1521 can be coupled to second housing portion 1343 via a threaded engagement between fastener 1517 and threaded insert 1514. In this manner, a corresponding portion of washer 1521 can be disposed between the head of fastener 1517 and at least one of opening 1719 (and, therefore, upper surface 1317a of first heating element 1317) and surface 1705 of the body of second housing portion 1343. Thus, the portion of washer 1521 that overlaps opening 1719 and a portion of upper surface 1317a of first heating element 1317 can limit axial displacement of first heating element 1317, preventing first heating element 1317 from sliding out of opening 1719. In some cases, first heating element 1317 can be compressible, allowing opening 1719 to be sized to provide a tight fit or interference fit with first heating element 1317 when in its non-operating state. This may additionally or alternatively serve to limit axial displacement of first heating element 1317 to prevent first heating element 1317 from sliding out of opening 1719. In some cases, opening 1720 may include a threaded insert 1519 to provide a connection point for grounding first fluid interface assembly 123 via, for example, a ground wire.

[0130] The body of the second housing portion 1343 may also include a protrusion 1721 extending a predetermined amount from the second surface 1703 in the first direction. As such, the protrusion 1721 may include a distal surface 1723 and a support surface 1725 extending between the second surface 1703 and the distal surface 1723. As will become more apparent below, when the first fluid interface assembly 123 is assembled, the support surface 1725 may abut a corresponding surface of the second thermal insulator 1315. A distal end of the support surface 1725 may include a retaining protrusion 1727 extending in the axial direction and configured to limit movement of the second thermal insulator 1315 in the first direction when the first fluid interface assembly 123 is assembled. It should also be noted that the second housing portion 1343 may include a through-hole 1729 extending from the distal surface 1723 through the first surface 1701 in the first direction. In some cases, the through hole 1729 may be a counterbore and, therefore, may include a first portion 1729a and a second portion 1729b aligned with the first portion 1729a. However, it is noted that when the first portion 1729a and the second portion 1729b are viewed in a direction opposite to the first direction, the shape of the second portion 1729b may be different from the shape of the first portion 1729a. For example, the first portion 1729a may have a circular shape, while the second portion 1729b may have a D-shaped configuration. Figure 18As shown, the size of the second portion 1729b can be larger than the corresponding size of the first portion 1729a, but the embodiment is not limited thereto. It should also be noted that the flat area of ​​the second portion 1729b of the through hole 1729 can also extend through a portion of the surface 1709, such as Figure 21 In this manner, through-hole 1729 can be configured to allow fastener 507 to pass therethrough and engage with opening 1003 in fourth interior surface 623 of region 501 of second portion 107 of process chamber 101. In some implementations, a portion of the head of fastener 507 can extend from the opening in surface 1709 corresponding to second portion 1729b.

[0131] See also Figure 19 , first through-hole 1717 may include a counterbore portion 1901 in first surface 1701. The corresponding diameter of counterbore portion 1901 may be larger than the corresponding diameter of first through-hole 1717. It should also be noted that the body of second housing portion 1343 may include openings 1903, 1905, 1907, and 1909 formed in first surface 1701 and extending in a first direction toward second surface 1703. Openings 1903 and 1905 may provide connection points for fasteners 1353 to allow first and second thermocouples 1319 and 1321 to be connected to second housing portion 1343. In some cases, openings 1903 and 1905 may include threaded inserts 1513 configured to engage fasteners 1353. First and second thermocouples 1319 and 1321 may be positioned adjacent to first surface 1701 and corresponding to first recessed portion 1713 and second recessed portion 1715 to allow variable temperature feedback information to be provided, for example, to thermal system 325. Such a configuration may also allow the temperature of the first and third conduits 1307 , 1309 to be explicitly monitored relative to the temperature of the second housing portion 1343 associated with the first and second recesses 1713 , 1715 .

[0132] As will become apparent below, the openings 1907 and 1909 can be configured to provide alignment features that correspond to corresponding alignment features in the first thermal insulator 1313. In some cases, the openings 1907 and 1909 can be configured to receive a first portion of the alignment pin 1515 therein. When the first thermal insulator 1313 is assembled as part of the first fluid interface assembly 123, the second portion of the alignment pin 1515 can be at least partially received in the alignment opening 2501 in the first thermal insulator 1313.

[0133] Figure 22 Schematically illustrates a Figure 15 A perspective view of a first housing portion of a first fluid interface assembly.

[0134] refer to Figure 22, the first housing portion 1341 can be a generally rectangular plate-like body having a first surface 2201 (e.g., a surface facing away from the second portion 107 of the processing chamber 101 (when assembled therewith)), which is opposite to the second surface 2203 (e.g., a surface facing the second portion 107 (when assembled therewith)) in a first direction. Although the first housing portion 1341 will be described as having a generally rectangular plate-like configuration, embodiments are not limited thereto. For example, the first housing portion 1341 can have any suitable geometric configuration, such as a generally circular, generally elliptical, generally triangular, generally pentagonal, generally hexagonal, etc.

[0135] The first surface 2201 and the second surface 2203 of the first housing portion 1341 can be defined by one or more peripheral surfaces, such as peripheral surfaces (or surfaces) 2205, 2207, 2209, and 2211, which can be interconnected by one or more peripheral surfaces (e.g., peripheral surface (or surface) 2213). The second surface 2203 can include one or more recessed portions (or channels), such as a first recessed portion 2215 and a second recessed portion 2217. In various embodiments, the first recessed portion 2215 and the second recessed portion 2217 can be configured to accommodate or otherwise interface with the first conduit 1307 and the third conduit 1309 in an assembled state of the first fluid interface assembly 123. In some examples, the first recessed portion 2215 and the second recessed portion 2217 can abut corresponding portions of the first conduit 1307 and the third conduit 1309. As shown, first recess 2215 and second recess 2217 may have flat (or substantially flat) surfaces relative to the contoured surfaces defining first recess 1713 and second recess 1715 in second housing portion 1343, but embodiments are not limited thereto. For example, first recess 2215 and second recess 2217 in first housing portion 1341 may have contoured surfaces similar to the contoured surfaces defining first recess 1713 and second recess 1715 in second housing portion 1343. The dimensions of first conduit 1307 and third conduit 1309 relative to the dimensions of first and second recesses 1713, 1715, 2215, and 2217 in first and second housing portions 1341, 1343 may at least partially result in first housing portion 1341 and second housing portion 1343 being spaced apart from each other by a distance 627 along a first direction when first fluid interface assembly 123 is assembled. In other examples, the second surfaces 1703 and 2203 of the first housing portion 1341 and the second housing portion 1343 can abut against each other in the assembled state of the first fluid interface assembly 123 .

[0136] Second surface 2203 may also include a plurality of first openings 2219 that may be configured to engage with fasteners 1345 to enable first housing portion 1341 and second housing portion 1343 to be assembled together with first conduit 1307 and third conduit 1309 extending therebetween. In some cases, first openings 2219 may each include a corresponding threaded insert of threaded inserts 1511 that may be engaged with a corresponding fastener of fasteners 1345. Although first housing portion 1341 is shown as including six first openings 2219, embodiments are not limited thereto. For example, first housing portion 1341 may include fewer than six first openings, such as one, two, three, four, etc., or may include more than six first openings, such as seven, eight, nine, ten, etc.

[0137] According to some implementations, the first housing portion 1341 may further include a through hole (or slotted area) 2221 extending from the first surface 2201 to the second surface 2203. The through hole 2221 may be sized to allow the protrusion 1721 of the second housing portion 1343 to extend therethrough when the first fluid interface assembly 123 is assembled. Figure 8 and 13 In some cases, surface 2223 (which partially defines through-hole 2221 ) can abut support surface 1725 of protrusion 1721 in the assembled state of first fluid interface assembly 123 .

[0138] Figure 23 and 24 Schematically illustrates a Figure 15 Various views of the second thermal insulator of the first fluid interface assembly.

[0139] refer to Figure 23 and 24 , the second thermal insulator 1315 can be formed as a substantially rectangular prism, including a first surface 2301 that is opposite to the second surface 2303 in the first direction. Although the second thermal insulator 1315 will be described as having a substantially rectangular prism configuration, embodiments are not limited thereto. For example, the second thermal insulator 1315 can have any suitable geometric configuration, such as a substantially cylindrical, substantially prism-shaped, substantially conical, substantially polyhedral, and the like.

[0140] The first surface 2301 and the second surface 2303 of the second thermal insulator 1315 can be defined by one or more peripheral surfaces, such as peripheral surfaces (or surfaces) 2305, 2307, 2309, and 2311, which can be interconnected. In some cases, one or more chamfered surfaces (e.g., chamfered surface 2313) can connect adjacent peripheral surfaces to each other. Additionally, the second thermal insulator 1315 can include an opening 2315 in surface 2309 that extends in an axial direction toward surface 2305. The opening 2315 can also extend from the second surface 2303 through the first surface 2301 in the first direction. In some embodiments, the opening 2315 can be sized to allow a terminal surface 2317 of the opening 2315 to abut against the support surface 1725 of the protrusion 1721 of the second housing portion 1343 when the second thermal insulator 1315 is included as part of the first fluid interface assembly 123. It should also be noted that in the assembled state of the first fluid interface assembly 123, the surface 2305 of the second thermal insulator 1315 can abut the terminating surface 911s of the opening 911 in the second portion 107 of the process chamber 101. This can prevent some contact between the second portion 107 and the first housing portion 1341 and, therefore, can at least partially thermally isolate the second portion 107 of the process chamber 101 from the first housing portion 1341.

[0141] Figure 25 Schematically illustrates a Figure 15 A perspective view of a first thermal insulator of a first fluid interface assembly.

[0142] refer to Figure 25 , the first thermal insulator 1313 can be formed as a substantially rectangular prism, including a first surface 2503 that is opposite to the second surface 2505 in the first direction. Although the first thermal insulator 1313 will be described as having a substantially rectangular prism configuration, embodiments are not limited thereto. For example, the first thermal insulator 1313 can have any suitable geometric configuration, such as a substantially cylindrical, substantially prism-shaped, substantially conical, substantially polyhedral, and the like.

[0143] The first surface 2503 and the second surface 2505 of the first thermal insulator 1313 can be defined by one or more peripheral surfaces, such as peripheral surfaces (or surfaces) 2507, 2509, 2511, and 2513, which can be interconnected. In some cases, one or more chamfered surfaces (e.g., chamfered surface 2515) can interconnect adjacent peripheral surfaces. As previously described, the first thermal insulator 1313 can also include an alignment opening 2501 extending from the second surface 2505 through the first surface 2503 in a first direction. In some embodiments, the alignment opening 2501 can have a slotted or stadium-shaped configuration and can be configured to interface with the alignment pin 1515 in the assembled state of the first fluid interface assembly 123. The first thermal insulator 1313 can also include a through-hole 2519 extending from the second surface 2505 through the first surface 2503 in the first direction. The through-hole 2519 can be sized to allow the first fastener 1301 to extend therethrough.

[0144] According to some embodiments, in an assembled state of the first fluid interface assembly 123, the first thermal insulator 1313 can be disposed between the second housing portion 1343 and the fourth inner surface 623 of the second portion 107 of the process chamber 101. This can prevent some contact between the second portion 107 and the second housing portion 1343 and, thus, can at least partially thermally insulate the second portion 107 of the process chamber 101 from the second housing portion 1343. In some embodiments, in an assembled state of the first fluid interface assembly 123 and the process chamber 101, the first surface 2503 and the second surface 2505 can abut the first surface of the second housing portion 1343 and the fourth inner surface 623 of the region 501 of the second portion 107 of the process chamber 101, respectively.

[0145] Figure 26 and 27 Schematically illustrates a Figure 15 A perspective view and an orthographic projection view of a first fluid disconnect component of a first fluid interface assembly.

[0146] refer to Figure 26 and 27 , the first fluid disconnect member 1305 may be formed as a plate-like body having a first surface 2601 opposite to the second surface 2603 in the axial direction. The first through hole 2701 and the second through hole 2703 may extend from the first surface 2601 through the second surface 2603 in the axial direction. Therefore, when the processing chamber 101 is arranged in the first configuration (e.g. Figure 1), the first surface 2601 of the first fluid disconnect 1305 can mate with the first surface 3601 of the second fluid disconnect 1323 in a manner such that the first conduit 1307 and the second conduit 1325 become fluidly connected to each other and the third conduit 1309 and the fourth conduit 1327 become fluidly connected to each other. As will become more apparent below, the gaskets 2705 and 2707 (in Figure 27 Gaskets 2705 and 2707 may surround first through-hole 2701 and second through-hole 2703, respectively, to fluidically isolate first conduit 1307 and third conduit 1309 from each other, at least within first fluid disconnect 1305.

[0147] In some implementations, the proximal ends of the first and third conduits 1307, 1309 can be fluidically and structurally connected to the first and second through-holes 2701, 2703 via connection points (or connectors) 2605 and 2607. The distal ends of the first and third conduits 1307, 1309 can include corresponding fluid disconnects (e.g., quick disconnects) 2609 and 2611, respectively, to allow the first fluid disconnect 1305 to be relatively easily installed and / or replaced in the system 103.

[0148] According to various embodiments, in an assembled state of the first fluid interface assembly 123, surfaces 2209 and 1709 of the first housing portion 1341 and the second housing portion 1343 can abut against the second surface 2603. Additionally, the second surface 2603 of the first fluid disconnect 1305 can include a recessed (or notched) portion 2613 that can be configured to receive at least a portion of the head of the first fastener 1301 therein when the first fluid interface assembly 123 is assembled with the second portion 107 of the processing chamber 101.

[0149] Figure 28-32 Schematically illustrates a Figure 16 Various views of the fourth housing portion of the second fluid interface assembly.

[0150] refer to Figure 28-32, the fourth housing portion 1349 can have a body formed as a generally rectangular prism, including a first surface 2801 (e.g., a surface facing away from the first portion 105 of the processing chamber 101 (when assembled therewith)), the first surface 2801 being opposite to the second surface 2803 (e.g., a surface facing the second portion 107 (when assembled therewith)) in a first direction. Although the body of the fourth housing portion 1349 will be described as having a generally rectangular prism configuration, embodiments are not limited thereto. For example, the fourth housing portion 1349 can have any suitable geometric configuration, such as a generally cylindrical, generally prism-shaped, generally conical, generally polyhedral, and the like.

[0151] First surface 2801 and second surface 2803 of fourth housing portion 1349 can be defined by one or more peripheral surfaces, such as interconnected peripheral surfaces (or surfaces) 2805, 2807, 2809, and 2811. In some cases, surface 2807 can be connected to second surface 2803 via chamfered surface 2813, and surface 2811 can be connected to second surface 2803 via chamfered surface 2815. First surface 2801 of fourth housing portion 1349 can include one or more recessed portions (or channels), such as first recessed portion 2817 and second recessed portion 2819, configured to accommodate or otherwise interface with second conduit 1325 and fourth conduit 1327 when assembled with temperature-controlled housing 1329. In some cases, one or more surfaces defining the first recess 2817 and the second recess 2819 can abut corresponding portions of the second and fourth conduits 1325, 1327 to facilitate heat transfer between the fourth housing portion 1349 and the second and fourth conduits 1325, 1327. To this end, the respective contours of the first and second recesses 2817, 2819 can correspond to the respective contours of the second and fourth conduits 1325, 1327, thereby also facilitating heat transfer between the fourth housing portion 1349 and the second and fourth conduits 1325, 1327. It should also be noted that in the assembled state of the second temperature-controlled housing 1329, the second and fourth conduits 1325, 1327 can be partially (or completely) accommodated within the first and second recesses 2817, 2819.

[0152] According to various embodiments, first surface 2801 of fourth housing portion 1349 may further include a plurality of first through-holes 2821, which may be configured to not only allow fasteners 1351 to pass therethrough but also enable third housing portion 1347 and fourth housing portion 1349 to be assembled together with second conduit 1325 and fourth conduit 1327 extending therebetween. While fourth housing portion 1349 is shown as including eight first through-holes 2821, embodiments are not limited thereto. For example, fourth housing portion 1349 may include fewer than eight first through-holes, such as one, two, three, four, etc., or may include more than eight first through-holes, such as nine, ten, eleven, twelve, etc.

[0153] In some implementations, the body of the fourth housing portion 1349 can include openings 2823, 3201, and 3203 extending in the axial direction in the surface 2809. The opening 2823 can be configured to receive at least a portion of the second heating element 1335 therein. The dimensions of the opening 2823 in a plane perpendicular (or substantially perpendicular) to the axial direction can allow for a clearance (or transition) fit with the second heating element 1335 when the second heating element 1335 is in a non-operating state. This can allow for differential expansion between the second heating element 1335 and the fourth housing portion 1349 when the second heating element 1335 is in an operating state. Thus, the opening 3201 can be used in conjunction with the fastener 1619 and the washer 1621 to limit axial displacement of the second heating element 1335 within the opening 2823. For example, second heating element 2823 can be slidably received within opening 2823, and gasket 1621 can be coupled to fourth housing portion 1349 via a threaded engagement between fastener 1619 and threaded insert 1615. In this manner, a corresponding portion of gasket 1621 can be disposed between the head of fastener 1619 and at least one of opening 2823 (and, therefore, lower surface 1335a of second heating element 1335) and surface 2809 of the main body of fourth housing 1349. Thus, the portion of gasket 1621 that overlaps opening 2823 and a portion of lower surface 1335a of second heating element 1335 can limit axial displacement of second heating element 1335, preventing second heating element 1335 from sliding out of opening 2823. In some cases, second heating element 1335 can be compressible to allow opening 2823 to be sized to provide a close fit or interference fit with second heating element 1335 when in its inoperative state. This can additionally or alternatively serve to limit axial displacement of the second heating element 1335 to prevent the second heating element 1335 from sliding out of the opening 2823. In some implementations, the opening 3203 can include a threaded insert 1617 to provide a connection point for grounding the second fluid interface assembly 127 via, for example, a ground wire.

[0154] The main body of the fourth housing portion 1349 may further include protrusions 2825 and 2827 extending a predetermined amount from surfaces 2807 and 2811, respectively, in the second direction (or a direction opposite to the second direction). Accordingly, protrusions 2825 and 2827 may include distal surfaces 2829 and 2831, respectively, and support surfaces 2833 and 2835, respectively. In this manner, the fourth housing portion 1349 may have a T-shaped configuration, with the main body forming a web portion extending in the axial direction and protrusions 2825 and 2827 forming a flange portion extending in the second direction (or a direction opposite to the second direction). As will become more apparent below, in the assembled state of the process chamber 101 (including the second fluid interface assembly 127), the support surfaces 2833 and 2835 of the protrusions 2825 and 2827 may be separated from corresponding portions of the support surface 1121 of the first portion 105 of the process chamber 101 by the third thermal insulator 1331.

[0155] Fourth housing portion 1349 may also include a protrusion 2837 that extends a determined amount in the first direction from first surface 2801. Thus, protrusion 2837 may include a distal surface 2839. As will become more apparent below, when first portion 105 of process chamber 101 is assembled, including second fluid interface assembly 127, distal surface 2839 of protrusion 2837 may be spaced apart from recessed surface 1115 of third region 1201 of first portion 105 by a distance 801 extending in the first direction. In some cases, fourth thermal insulator 1333 (which may be configured similarly to first thermal insulator 1313) may be disposed between distal surface 2839 and recessed surface 1115. In some cases, first surface 2503 and second surface 2505 of fourth thermal insulator 1333 may abut distal surface 2839 and recessed surface 1115, respectively, of third region 1201 of first portion 105 of process chamber 101. It should also be noted that the fourth housing portion 1349 may include a through hole 2841 extending from the distal surface 2839 through the second surface 2803 in a direction opposite to the first direction. In some cases, the through hole 2841 may be a counterbore and, therefore, may include a first portion 2841a and a second portion 2841b aligned with the first portion 2841a. Figure 29 As shown in FIG, the size (e.g., diameter) of the second portion 2841b may be larger than the corresponding size (e.g., diameter) of the first portion 2841a, but the embodiment is not limited thereto. To this end, the through hole 2841 may be configured to allow the second fastener 1303 to pass therethrough and engage with the opening 1131 in the third region 1201 of the first portion 105 of the process chamber 101.

[0156] In some implementations, the first through-hole 2821 may include a counterbore portion 2843 located in the second surface 2803. Furthermore, when viewed along the first direction, the corresponding shape of the counterbore portion 2843 may differ from the corresponding shape of the first through-hole 2821. For example, the first through-hole 2821 may have a corresponding circular shape and the counterbore portion 2843 may have a corresponding D-shape, but embodiments are not limited thereto. The dimensions of the counterbore portion 2843 may be larger than the respective corresponding dimensions of the first through-hole 2821, but embodiments are not limited thereto.

[0157] According to some embodiments, chamfered surfaces 2813 and 2815 can include recessed portions 2845 and 2847, respectively, that can be sized and shaped to allow fourth thermocouple 1337 and third thermocouple 1339 to be connected to fourth housing portion 1349 via corresponding openings 2849 and 2851 in recessed portions 2845 and 2847 and fasteners 1355, respectively. In some cases, openings 2849 and 2851 can include threaded inserts 1613 configured to engage fasteners 1355. Third thermocouple 1337 and fourth thermocouple 1339 can be positioned adjacent second surface 2803 and corresponding to first recessed portion 2817 and second recessed portion 2819 to allow variable temperature feedback information to be provided to, for example, thermal system 325. Such a configuration can also allow the temperature of second conduit 1325 and fourth conduit 1327 to be explicitly monitored relative to the temperature of fourth housing portion 1349 relative to first recessed portion 2817 and second recessed portion 2819.

[0158] Figure 33 Schematically illustrates a Figure 16 1 . A perspective view of a third housing portion of a second fluid interface assembly.

[0159] refer to Figure 33 , the third housing portion 1347 can be a generally rectangular plate-shaped body having a first surface 3301 (e.g., a surface facing away from the first portion 105 of the processing chamber 101 (when assembled therewith)), which is opposite to the second surface 3303 (e.g., a surface facing the first portion 105 (when assembled therewith)) in a first direction. Although the third housing portion 1347 will be described as having a generally rectangular plate-shaped configuration, embodiments are not limited thereto. For example, the third housing portion 1347 can have any suitable geometric configuration, such as a generally circular, generally elliptical, generally triangular, generally pentagonal, generally hexagonal, etc.

[0160] The first surface 3301 and the second surface 3303 of the third housing portion 1347 can be defined by one or more peripheral surfaces, such as peripheral surfaces (or surfaces) 3305, 3307, 3309, and 3311, which can be interconnected by one or more peripheral surfaces (e.g., peripheral surface (or surface) 3313). The first surface 3301 can include one or more recessed portions (or channels), such as a first recessed portion 3315 and a second recessed portion 3317. In various embodiments, the first recessed portion 3315 and the second recessed portion 3317 can be configured to accommodate or otherwise interface with the second conduit 1325 and the fourth conduit 1327 in an assembled state of the second fluid interface assembly 127. In some examples, the first recessed portion 3315 and the second recessed portion 3317 can abut respective portions of the second conduit 1325 and the fourth conduit 1327. As shown, first and second recesses 3315, 3317 may have flat (or substantially flat) surfaces relative to the contoured surfaces defining first and second recesses 2817, 2819 in fourth housing portion 1349, but embodiments are not limited thereto. For example, first and second recesses 3315, 3317 in third housing portion 1347 may have contoured surfaces similar to the contoured surfaces defining first and second recesses 2817, 2819 in fourth housing portion 1349. The dimensions of second conduit 1325 and fourth conduit 1327 relative to the dimensions of first and second recesses 2817, 2819, 3317, and 3319 in third and fourth housing portions 1347, 1349 may at least partially result in third and fourth housing portions 1347, 1349 being spaced apart from each other by a distance 719 in the first direction when second fluid interface assembly 127 is assembled. In other implementations, the first surfaces 2801 and 3301 of the third housing portion 1347 and the fourth housing portion 1349 may abut against each other in the assembled state of the second fluid interface assembly 127 .

[0161] First surface 3301 of third housing portion 1347 may also include a plurality of first openings 3319, which may be configured to engage with fasteners 1351 to enable assembly of third and fourth housing portions 1347, 1349 with second and fourth conduits 1325, 1327 extending therebetween. In some cases, first openings 3319 may each include a corresponding threaded insert of threaded insert 1611, which may be engaged with a corresponding fastener of fasteners 1351. While third housing portion 1347 is shown as including eight first openings 3319, embodiments are not limited thereto. For example, third housing portion 3341 may include fewer than eight first openings, such as one, two, three, four, etc., or may include more than eight first openings, such as nine, ten, eleven, twelve, etc.

[0162] According to some embodiments, the third housing portion 1347 may further include a through hole (or slotted area) 3321 extending from the first surface 3301 to the second surface 3303. The through hole 3321 may be sized to allow the protrusion 2837 of the fourth housing portion 1349 to extend therethrough when the second fluid interface assembly 127 is assembled. Figure 8 and 14 In some cases, surface 3323 (which can partially define through-hole 3321 ) can abut support surface 2857 of protrusion 2837 in the assembled state of second fluid interface assembly 127 .

[0163] Figure 34 Schematically illustrates a Figure 16 A perspective view of the third thermal insulator of the second fluid interface assembly.

[0164] refer to Figure 34 , third thermal insulator 1331 may be formed as a generally irregular prism, including at least first surface 3401 opposite second surface 3403 in the axial direction. Although third thermal insulator 1331 will be described as having such an irregular prism configuration, embodiments are not limited thereto. For example, third thermal insulator 1331 may have any suitable geometric configuration, such as a generally cylindrical, generally prism-shaped, generally conical, generally polyhedral, or the like.

[0165] The first surface 3401 and the second surface 3403 of the third thermal insulator 1331 can be defined by one or more outward-facing surfaces, such as outward-facing surfaces (or surfaces) 3405, 3407, 3409, 3411, 3413, 3415, and 3417, which can be connected to each other. In some cases, one or more chamfered surfaces (e.g., chamfered surface 3419) can connect adjacent outer surfaces to each other. In various implementations, the third thermal insulator 1331 can include an opening 3421 extending in an axial direction between the second surface 3401 and the first surface 3403 and extending in a first direction from surfaces 3411 and 3413 toward surface 3405. The opening 3421 can be at least partially defined (or otherwise defined) by one or more inward-facing surfaces (e.g., inward-facing surfaces 3423, 3425, and 3427). To this end, the opening 3421 can be sized and configured to at least partially surround the second temperature-controlled housing 1329 in the assembled state of the second fluid interface assembly 127. Figure 8 、 1314. This configuration can also allow the third thermal insulator 1331 to be stacked between the support surfaces 2833 and 2835 of the fourth housing portion 1349 and the support surface 1121 of the first portion 105 of the process chamber 101 when the process chamber 101 (including the second fluid interface assembly 127) is assembled. This can prevent some contact between the first portion 105 and the second temperature-controlled housing 1329 and, thus, can at least partially thermally isolate the first portion 105 of the process chamber 101 from the second temperature-controlled housing 1329. In addition, the third thermal insulator 1331 can include a notched (or recessed) portion 3429 formed in the first surface 3401 and the surface 3405.

[0166] Figure 35 Schematically illustrates a Figure 15 and 16 A partial perspective view of a cartridge heater of at least one of the first and second fluid interface assemblies.

[0167] In some implementations, the first heating element 1317 and the second heating element 1335 may be formed as cartridge heaters, but the embodiments are not limited thereto. In some cases, the first heating element 1317 and the second heating element 1335 may be similarly formed to have a generally cylindrical body 3501 (which may be formed, for example, of stainless steel), a heating filament 3503, and a filler material 3505, such as magnesium oxide. The heating filament 3503 may extend through a central region within the body 3501. In some cases, the heating filament 3503 may include a coiled wire segment and / or any other suitable wiring pattern within the body 3501 to form, for example, a resistor or resistive load configured to generate heat based on an applied current. Filler material 3505 may be provided to fill the space between the heating filament 3503 and the inner surface of the body 3501. Input and output bus lines 3507 and 3509 may be electrically connected to the heating filament 3503 to enable current to be applied to and flow through the heating filament 3503.

[0168] Figure 36 and 37 Schematically illustrates a Figure 16 A perspective view and an orthographic projection of a second fluid disconnect member of a second fluid interface assembly.

[0169] refer to Figure 36 and 37, second fluid disconnect 1323 can be formed as a plate-like body having a first surface 3601 axially opposed to second surface 3603. At least peripheral surfaces (or surfaces) 3605 and 3607 can extend axially between first and second surfaces 3601 and 3603. First through-hole 3701 and second through-hole 3703 can extend axially from first surface 3601 through second surface 3603. It should also be noted that second fluid disconnect 1323 can include recessed openings 3609 and 3611 in first surface 3601, extending axially toward second surface 3603. In some cases, recessed openings 3609 and 3611 can have a generally annular configuration, with protrusions 3613 and 3615 formed within inner circular regions of recessed openings 3609 and 3611, respectively. In this manner, the recessed openings 3609 and 3611 can be configured to support the shims 2705 and 2707, respectively, at least partially therein. One or more first machined recesses (e.g., first machined recesses 3617 and 3619) can be formed in the first surface 3601 and can be arranged at or near the outer boundaries of the recessed openings 3609 and 3611. One or more second machined recesses (e.g., second machined recesses 3621 and 3623) can be formed in the protrusions 3613 and 3615 at or near the inner boundaries of the recessed openings 3609 and 3611. Note that the first and second machined recesses 3617-3623 can allow the shims 2705 and 2707 to be more easily removed from the recessed openings 3609 and 3611 using a tool, such as a shim picker.

[0170] According to some embodiments, when the processing chamber 101 is arranged in the first configuration (e.g. Figure 1 ), the first surface 2601 of the first fluid disconnect 1305 cooperates with the first surface 3601 of the second fluid disconnect 1323 in a manner that allows the first conduit 1307 and the second conduit 1325 to become fluidically connected to each other and the third conduit 1309 and the fourth conduit 1327 to become fluidically connected to each other. It should also be noted that the gaskets 2705 and 2707 (in Figure 27 3609 and 3611) can be at least partially compressed between the first and second fluid disconnects 1305 and 1323 to enhance the seal therebetween. Gaskets 2705 and 2707 can surround the first through-hole 3701 and the second through-hole 3703, respectively, to fluidically isolate the second and fourth conduits 1325 and 1327 from each other, at least within the second fluid disconnect 1323.

[0171] In some implementations, the proximal ends of the second conduit 1325 and the fourth conduit 1327 can be fluidically and structurally connected to the first through-hole 3701 and the second through-hole 3703 via connection points (or connections) similar to the connection points 2605 and 2607 of the first fluid disconnect 1305. The distal ends of the second conduit 1325 and the fourth conduit 1327 can include corresponding fluid disconnects (e.g., quick disconnects) 3625 and 3627, respectively, to allow the second fluid disconnect 1323 to be relatively easily installed and / or replaced in the system 103. It should also be noted that the first surface 3601 of the second fluid disconnect 1323 can include one or more leak detection grooves (e.g., leak detection grooves 3629 and 3631) that are fluidly connected to the first through-hole 3701 and the second through-hole 3703. In some embodiments, the leak detection groove 3629 can extend in the second direction and can fluidically connect the first through-hole 3701 and the second through-hole 3703 to each other without the gaskets 2705 and 2707. The leak detection groove 3631 can extend in the first direction and can include a distal end fluidically connected to the leak detection groove 3629 and a proximal end fluidically connected to the surrounding environment via the surface 3605. In response to failure of at least one of the gaskets 2705 and 2707, fluid flowing through the corresponding flow path (or fluid passage) through the corresponding one of the first through-hole 3701 and the second through-hole 3703 can flow out of the leak detection grooves 3629 and 3631 to alert a user of the malfunction.

[0172] According to various embodiments, surfaces 2805 and 3309 of third and fourth housing portions 1347, 1349 can abut second surface 3603 in an assembled state of second fluid interface assembly 127. Additionally, second surface 3603 and surface 3607 of second fluid disconnect 1323 can further include a recessed (or notched) portion 3633.

[0173] Figure 38 and 39 Schematically illustrates a Figure 5 A perspective view of third and fourth fluid disconnects of a semiconductor processing chamber.

[0174] refer to Figure 38Third fluid disconnect 3801 can be formed similarly to first fluid disconnect 1305, except that the body portion of third fluid disconnect 3801 can be thicker in the axial direction than the body portion of first fluid disconnect 1305 and can include a through-hole 3803 extending therethrough in the first direction. Through-hole 3803 can be configured to allow a fastener to extend therethrough and engage with opening 1005 in second portion 107 of process chamber 101. This can allow third fluid disconnect 3801 to be structurally connected to second portion 107. Furthermore, third fluid disconnect 3801 can omit recess 2613 formed in first fluid disconnect 1305. The remaining features of third fluid disconnect 3801 can be similar to those of first fluid disconnect 1305, except that third fluid disconnect 3801 can be free of abutment against the temperature-controlled housing and can be associated with delivery tube 469 and diverting flow path 141, rather than first conduit 1307 and third conduit 1309. Therefore, repetitive descriptions will be omitted so as not to obscure the embodiments described herein.

[0175] like Figure 39 As shown, fourth fluid disconnect 3901 can be formed similarly to second fluid disconnect 1323, except that the body portion of fourth fluid disconnect 3901 can be thicker in the axial direction than the body portion of second fluid disconnect 1323 and can include a through-hole 3903 extending therethrough in a first direction. Through-hole 3903 can be configured to allow a fastener to extend therethrough and engage with opening 1133 in first portion 105 of process chamber 101. This can allow fourth fluid disconnect 3901 to be structurally connected to first portion 105. Furthermore, fourth fluid disconnect 3901 can omit recess 3633 formed in second fluid disconnect 1323. The remaining features of fourth fluid disconnect 3901 can be similar to those of second fluid disconnect 1323, except that fourth fluid disconnect 3901 can be free of abutment against the temperature-controlled housing and can be associated with delivery tube 469 and diverter flow path 141, rather than second conduit 1325 and fourth conduit 1327. Therefore, repetitive descriptions will be omitted so as not to obscure the embodiments described herein. Multi-station processing tools

[0176] Figure 40 A multi-station processing tool is schematically illustrated according to some embodiments.

[0177] In some implementations, the multi-station processing tool 4000 may include an inbound load lock 4003 and an outbound load lock 4005, one or both of which may include a plasma source and / or an ultraviolet (UV) source. A robot 4007 at atmospheric pressure is configured to move wafers from a cassette loaded via a transfer pod 4009 to the inbound load lock 4003 via an atmospheric port 4011. The wafer 303 is placed on a pedestal 4013 in the inbound load lock 4003 by the robot 4007, the atmospheric port 4011 is closed, and the inbound load lock 4003 is evacuated. In instances where the inbound load lock 4003 includes a remote plasma source, the wafer 303 may be exposed to the remote plasma treatment in the inbound load lock 4003 before being introduced into the processing chamber 4015. In some embodiments, the processing chamber 101 may form part of the processing chamber 4015. Further, the wafer 303 may be heated in the inbound load lock 4003, for example to remove moisture and / or adsorbed gases. Next, a chamber transfer port 4017 to a processing chamber 4015 is opened, and another robot 4019 places the wafer 303 on a pedestal at the first station in the reactor (shown in the reactor) for processing. Although depicted in FIG. Figure 40 The implementation in FIG. 3 includes a load lock, but it should be understood that in some implementations, wafer 303 may be provided directly into a processing station.

[0178] like Figure 40 As shown, processing chamber 4015 includes four processing stations, numbered from 1 to 4. Each station has a temperature-controlled base (e.g., temperature-controlled base 4021 of station 1) and a gas line inlet. It should be understood that in some cases, each processing station may have different or multiple purposes. For example, in some embodiments, a processing station may switch between chemical vapor deposition (CVD) and PECVD process modes. In another example, a deposition operation, such as a PECVD operation, may be performed in one station, and exposure to UV radiation for UV curing may be performed in another station. In some cases, deposition and UV curing may be performed in the same station. Further, although processing chamber 4015 is shown as including four stations, embodiments are not limited thereto. For example, processing chamber 4015 may have any suitable number of stations, such as five or more stations, or three or less stations.

[0179] The multi-station processing tool 4000 may include a wafer handling system (e.g., a robot 4019 including a spider 4001) for transferring and / or positioning wafers within the processing chamber 4015. In some embodiments, the wafer handling system may transfer wafers between various processing stations and / or between a processing station and a load lock. However, it is contemplated that any suitable wafer handling system may be employed, such as, for example, wafer carousels, other wafer handling robots, etc. Further, the multi-station processing tool 4000 may include (or otherwise be coupled to) a system controller 4023 for controlling process conditions and hardware states of the multi-station processing tool 4000. The system controller 4023 may include one or more memory devices 4025, one or more mass storage devices 4027, and one or more processors 4029. Each processor 4029 may include a central processing unit (CPU) or computer, analog and / or digital input / output connections, a stepper motor controller board, etc.

[0180] In some embodiments, the system controller 4023 controls every activity of the multi-station processing tool 4000. For example, the system controller 4023 may execute system control software 4031 stored in a mass storage device 4027, loaded into a memory device 4025, and executed by a processor 4029. Alternatively, the control logic may be hard-coded in the system controller 4023. Application-specific integrated circuits (ASICs), programmable logic devices (e.g., field programmable gate arrays (FPGAs)), and / or the like may be used for these purposes. In the following discussion, wherever "software" or "code" is used, functionally equivalent hard-coded logic may be used instead. The system control software 4031 may include software for controlling the relative displacement between the first portion 105 and the second portion 107 of the process chamber, timing, gas mixing, gas flow rates, conductance, temperatures of components forming a gas delivery system (e.g., system 103), chamber and / or station pressures, chamber and / or station temperatures, wafer temperatures, target power levels, RF power levels, substrate pedestal, chuck and / or pedestal positions, and other parameters for a particular process performed by the multi-station process tool 4000. For example, various process tool component subroutines or control objects may be written to control the operation of the process tool components required to perform various process tool processes. The system control software 4031 may be encoded in any suitable computer-readable programming language.

[0181] In some embodiments, the system control software 4031 may include input / output control (IOC) sequence instructions for controlling the various parameters described above. In some embodiments, other computer software and / or programs stored on the mass storage device 4027 and / or the memory device 4025 associated with the system controller 4023 may be used. Examples of programs or program segments used for this purpose include substrate positioning programs, process gas control programs, pressure control programs, heater control programs, cooler control programs, and plasma control programs.

[0182] The substrate positioning program may include code for processing tool components that are used to load and position the wafer 303 on the pedestal 4021 and control the spacing between the wafer 303 and other components of the multi-station processing tool 4000.

[0183] The process gas control program may include code for controlling the flow rate and conductance of gas compositions (e.g., silicon-containing gas, oxygen-containing gas, nitrogen-containing gas, diluent (or inert) gas, etc.), and optionally for flowing gases into one or more process stations prior to deposition to stabilize the pressure in the process station. The process gas control program may additionally or alternatively include code for controlling the delivery of gaseous precursors (which may be in solid or liquid phase at ambient temperature and pressure conditions). The pressure control program may include code for controlling the pressure in the process station by, for example, adjusting a throttle valve or pendulum valve in the exhaust system of the process station, the flow of gas into the process station through the gas delivery system 103, and / or similar operations.

[0184] The heater control program may include code for controlling the flow of current to one or more heating units used to heat a susceptor (e.g., susceptor 4021), a gas distributor (e.g., gas distributor 311) of the processing chamber 4015, conduits, and / or other components of the gas delivery system 103. Additionally or alternatively, the heater control program may control the delivery of a heat transfer gas (e.g., helium) to the gas distributor (and therefore to the wafer 303).

[0185] The cooling control program may include code for controlling the flow rate of a conductive cooling fluid through a cooling unit that is used to extract heat from a pedestal (e.g., pedestal 4021) and / or a gas distributor (e.g., gas distributor 311) and thereby transfer such thermal energy to, for example, a waste heat capture, storage, recovery, and / or disposal system. The flow of cooling fluid through the cooling unit may also extract heat from wafer 303.

[0186] A plasma control program may include code for setting RF power levels applied to process electrodes in one or more process stations according to various embodiments.

[0187] According to various embodiments, the pressure control program may include code for maintaining the pressure in the reaction chamber.

[0188] In some embodiments, there may be a user interface associated with the system controller 4023. The user interface may include a display screen, a graphical software display of apparatus and / or process conditions, and user input devices (e.g., a pointing device, keyboard, touch screen, microphone, etc.).

[0189] In some embodiments, the parameters adjusted by the system controller 4023 may be related to process conditions. Non-limiting examples include process gas composition and flow rate, temperature, pressure, plasma conditions (e.g., RF bias power level), pressure, temperature, etc. These parameters may be provided to the user in the form of a recipe that can be input using a user interface.

[0190] Signals for monitoring the process may be provided from various process tool sensors (e.g., the first through fourth thermocouples 1319, 1321, 1337, and 1339) via analog and / or digital input connections of the system controller 4023. Signals for controlling the process may be output on analog and / or digital output connections of the multi-station process tool 4000. Non-limiting examples of process tool sensors that may be monitored include mass flow controllers, pressure sensing gauges (e.g., manometers), thermocouples, and the like. Appropriately programmed feedback and control algorithms may be used with the data from these sensors to maintain process conditions.

[0191] The system controller 4023 may provide program instructions for implementing one or more of the above-described processes. The program instructions may control various process parameters, such as direct current (DC) power level, RF bias power level, pressure, temperature, etc. The instructions may control these parameters according to various embodiments to operate the deposition of the stress-compensating layer stack.

[0192] The system controller 4023 will typically include one or more memory devices and one or more processors configured to execute the instructions so that the apparatus will perform methods according to some embodiments. In some cases, a machine-readable medium containing instructions for controlling process operations according to various embodiments may be coupled to the system controller 4023.

[0193] In some embodiments, the system controller 4023 can be part of a system that can be part of the examples described above. Such a system can include semiconductor processing equipment that includes one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (e.g., wafer pedestals, gas flow systems, thermal management systems, etc.). The systems discussed above can be integrated with electronic devices that control their operation before, during, and / or after processing of semiconductor wafers or substrates. The electronic devices can be referred to as "controllers" that can control various components or subcomponents of one or more systems. For example, depending on the processing requirements and / or system type, the system controller 4023 can be programmed to control any of the processes disclosed herein, including the delivery of process gases, temperature settings (e.g., heating and / or cooling), valve operation, flow regulator operation, light source control for radiative heating, pressure settings, vacuum settings, power settings, RF generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfer into and out of tools or chambers and other transfer tools and / or load locks connected or docked with a specific system. In this manner, the system controller 4023 may be configured to control various actuators and motors of the wafer processing system as well as flow regulators and other systems of the fluid delivery system.

[0194] Broadly speaking, the system controller 4023 can be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, and / or similar operations. The integrated circuits can include chips in the form of firmware that stores program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). The program instructions can be instructions sent to the system controller 4023 in the form of various separate settings (or program files) that define operating parameters for performing a specific process on or for a semiconductor wafer or system. In some embodiments, the operating parameters can be part of a recipe defined by a process engineer to complete one or more processing steps during the manufacture of one or more layers, materials, metals, oxides, silicon, silicon oxides, surfaces, circuits, dies on a wafer, and the like.

[0195] In some implementations, the system controller 4023 can be part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the system controller 4023 can be in the "cloud" or all or part of a wafer fab host system that can allow remote access to wafer processing. The computer can enable remote access to the system to monitor the current progress of manufacturing operations, review the history of past manufacturing operations, review trends or performance metrics for multiple manufacturing operations, change parameters of the current process, set processing steps to follow the current process, or start a new process. In some examples, a remote computer (e.g., a server) can provide process recipes to the system via a network (which can include a local network or the Internet). The remote computer can include a user interface that enables the input or programming of parameters and / or settings, which are then sent from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify parameters for each processing step to be performed during one or more operations. It should be understood that the parameters can be specific to the type of process to be performed and the type of tool the controller is configured to interface with or control. Thus, as described above, the system controller 4023 can be distributed, for example, by including one or more discrete controllers networked together and working toward a common purpose (e.g., process and control as described herein). An example of a distributed controller for such a purpose is one or more integrated circuits on a chamber that communicate with one or more integrated circuits remotely (e.g., at a platform level or as part of a remote computer), which combine to control the process on the chamber.

[0196] Example systems may include, but are not limited to, plasma etch chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, bevel edge etch chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etch (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing system that may be associated with or used in the manufacture and / or preparation of semiconductor wafers.

[0197] As described above, depending on one or more processing steps to be performed by the tool, the system controller 4023 can communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the factory, a host computer, another controller, or tools used in the transport of materials for transporting wafer containers to and from tool locations and / or load ports in a semiconductor manufacturing facility.

[0198] Certain embodiments relate to an apparatus comprising a semiconductor processing chamber having a first portion and a second portion movably connected to the first portion in a first configuration, the first portion and the second portion defining a housing associated with the first configuration. The apparatus also includes at least one gas distributor configured to distribute one or more process gases within the housing and a first fluid interface assembly. The first fluid interface assembly also includes a first fluid disconnect, a first conduit extending in an axial direction and including a first end structurally connected to the first fluid disconnect, a first temperature-controlled housing at least partially surrounding and contacting the first conduit, and a second fluid interface assembly structurally connected to the second portion. The first temperature-controlled housing is structurally connected to the first portion and includes a first heater. The second fluid interface assembly includes a second fluid disconnect and a second conduit extending in an axial direction and including a first end structurally connected to the second fluid disconnect. Furthermore, at least one of the first portion and the second portion is movable between the first configuration and a second configuration. In the second configuration, the first portion and the second portion are spaced apart from each other in the axial direction. In the first configuration, the first and second fluid disconnects are configured to be fluidically connected to form a first fluid path across a contact interface between the first and second portions through the first and second conduits. Furthermore, the first temperature-controlled housing is configured to transfer thermal energy to the first conduit via the first heater. Furthermore, the thermal energy transferred to the first conduit raises the temperature of the first conduit to a temperature above the vaporization temperature of the precursor of the one or more process gases. The apparatus further includes a cover plate removably coupled to the second portion. The cover plate includes a surface facing the recessed area of ​​the second portion in a direction transverse to the axial direction, and the surface of the cover plate is spaced apart from the second temperature-controlled housing in this direction. In one embodiment, the second temperature-controlled housing at least partially surrounds and contacts the fourth conduit; the second temperature-controlled housing is further configured to transfer thermal energy to the fourth conduit via the second heater; and the thermal energy transferred to the fourth conduit raises the temperature of the fourth conduit to at least the vaporization temperature of the precursor. In one example, the apparatus further includes a third fluid interface assembly and a fourth fluid interface assembly. The third fluid interface assembly includes a third fluid disconnect member structurally connected to the first portion; a fifth conduit extending in the axial direction and including a first end structurally connected to the third fluid disconnect member; and a seventh conduit extending in the axial direction and including a first end structurally connected to the third fluid disconnect member. The fourth fluid interface assembly includes a fourth fluid disconnect component structurally connected to the second portion; a sixth conduit extending in an axial direction and including a first end structurally connected to the fourth fluid disconnect component; and an eighth conduit extending in an axial direction and including a first end structurally connected to the fourth fluid disconnect component. In a first configuration, the third and fourth fluid disconnect components are fluidly connected to form a third fluid pathway across the contact interface via the fifth and sixth conduits, and a fourth fluid pathway across the contact interface via the seventh and eighth conduits.Furthermore, the third fluid passage is configured to supply at least one gas to the gas distributor, and the fourth fluid passage is configured to divert the at least one gas to the purge drain. In one embodiment of the present invention, neither the third fluid interface assembly nor the fourth fluid interface assembly includes a heater; and the third fluid interface assembly and the fourth fluid interface assembly are disposed adjacent to the first fluid interface assembly and the second fluid interface assembly.

[0199] Certain embodiments relate to an apparatus comprising a semiconductor processing chamber having a first portion and a second portion movably connected to the first portion in a first configuration, the first portion and the second portion defining a housing associated with the first configuration. The apparatus also includes at least one gas distributor configured to distribute one or more process gases within the housing and a first fluid interface assembly. The first fluid interface assembly also includes a first fluid disconnect, a first conduit extending in an axial direction and including a first end structurally connected to the first fluid disconnect, a first temperature-controlled housing at least partially surrounding and contacting the first conduit, and a second fluid interface assembly structurally connected to the second portion. The first temperature-controlled housing is structurally connected to the first portion and includes a first heater. The second fluid interface assembly includes a second fluid disconnect and a second conduit extending in an axial direction and including a first end structurally connected to the second fluid disconnect. Furthermore, at least one of the first portion and the second portion is movable between the first configuration and a second configuration. In the second configuration, the first portion and the second portion are spaced apart from each other in the axial direction. In the first configuration, the first and second fluid disconnects are configured to be fluidically connected to form a first fluid path across a contact interface between the first and second portions through the first and second conduits. Furthermore, the first temperature-controlled housing is configured to transfer thermal energy to the first conduit via a first heater. Furthermore, the thermal energy transferred to the first conduit raises the temperature of the first conduit to a temperature above the vaporization temperature of the precursor of the one or more process gases. In these embodiments, the first fluid passage is configured to supply the one or more process gases to the gas distributor. Furthermore, the first temperature-controlled housing includes a first housing portion and a second housing portion coupled to the first housing portion. The first housing portion includes a first surface and a second surface, the second surface opposing the first surface in a first direction transverse to the axial direction and facing the first conduit in a second direction opposite the first direction. The second housing portion includes a third surface and a fourth surface opposing the third surface in a second direction, the fourth surface facing the second surface in the first direction and including a first channel configured to accommodate a portion of the first conduit therein. The first fluid interface assembly further includes one or more thermal insulators configured to at least partially isolate the first portion from the first temperature-controlled housing. In one embodiment, the one or more thermal insulators include quartz. In one embodiment, the one or more thermal insulators include a first thermal insulator disposed between the first housing portion and a first corresponding portion of the first portion. In one embodiment, the through-hole of the first portion extends in the axial direction; the through-hole includes an opening extending in a direction transverse to the axial direction; and the first thermal insulator abuts against a first surface of the protrusion in the fourth surface of the second housing portion and a corresponding surface of the opening in the through-hole in the first portion. In one embodiment, the one or more thermal insulators include a second thermal insulator disposed between the second housing portion and a second corresponding portion of the first portion.In one embodiment, the second thermal insulator includes a first through-hole aligned with the second through-hole in the second housing portion; the first through-hole in the second thermal insulator is configured to accommodate a second fastener therethrough; and the second thermal insulator includes the one or more corresponding alignment features configured to interface with the one or more alignment features of the third surface of the second housing portion.

[0200] Certain embodiments relate to an apparatus comprising a semiconductor processing chamber having a first portion and a second portion movably connected to the first portion in a first configuration, the first portion and the second portion defining a housing associated with the first configuration. The apparatus also includes at least one gas distributor configured to distribute one or more process gases within the housing and a first fluid interface assembly. The first fluid interface assembly also includes a first fluid disconnect, a first conduit extending in an axial direction and including a first end structurally connected to the first fluid disconnect, a first temperature-controlled housing at least partially surrounding and contacting the first conduit, and a second fluid interface assembly structurally connected to the second portion. The first temperature-controlled housing is structurally connected to the first portion and includes a first heater. The second fluid interface assembly includes a second fluid disconnect and a second conduit extending in an axial direction and including a first end structurally connected to the second fluid disconnect. Furthermore, at least one of the first portion and the second portion is movable between the first configuration and a second configuration. In the second configuration, the first portion and the second portion are spaced apart from each other in the axial direction. In the first configuration, the first and second fluid disconnects are configured to be fluidically connected to form a first fluid path across a contact interface between the first and second portions through the first and second conduits. Furthermore, the first temperature-controlled housing is configured to transfer thermal energy to the first conduit via a first heater. Furthermore, the thermal energy transferred to the first conduit raises the temperature of the first conduit to a temperature above the vaporization temperature of the precursor of the one or more process gases. In these embodiments, the first fluid passage is configured to supply the one or more process gases to the gas distributor. Furthermore, the first temperature-controlled housing includes a first housing portion and a second housing portion coupled to the first housing portion. The first housing portion includes a first surface and a second surface, the second surface opposing the first surface in a first direction transverse to the axial direction and facing the first conduit in a second direction opposite the first direction. The second housing portion includes a third surface and a fourth surface opposing the third surface in a second direction, the fourth surface facing the second surface in the first direction and including a first channel configured to accommodate a portion of the first conduit therein. In one embodiment, the first housing portion includes a fifth surface extending between the first and second surfaces; the second housing portion includes a sixth surface extending between the third and fourth surfaces; and the first fluid disconnect abuts the fifth and sixth surfaces. In one embodiment, the first and second housing portions comprise aluminum.

[0201] Certain embodiments relate to an apparatus comprising a semiconductor processing chamber having a first portion and a second portion movably connected to the first portion in a first configuration, the first portion and the second portion defining a housing associated with the first configuration. The apparatus also includes at least one gas distributor configured to distribute one or more process gases within the housing and a first fluid interface assembly. The first fluid interface assembly also includes a first fluid disconnect, a first conduit extending in an axial direction and including a first end structurally connected to the first fluid disconnect, a first temperature-controlled housing at least partially surrounding and contacting the first conduit, and a second fluid interface assembly structurally connected to the second portion. The first temperature-controlled housing is structurally connected to the first portion and includes a first heater. The second fluid interface assembly includes a second fluid disconnect and a second conduit extending in an axial direction and including a first end structurally connected to the second fluid disconnect. Furthermore, at least one of the first portion and the second portion is movable between the first configuration and a second configuration. In the second configuration, the first portion and the second portion are spaced apart from each other in the axial direction. In the first configuration, the first and second fluid disconnects are configured to be fluidically connected to form a first fluid path across a contact interface between the first and second portions through the first and second conduits. Furthermore, the first temperature-controlled housing is configured to transfer thermal energy to the first conduit via a first heater. Furthermore, the thermal energy transferred to the first conduit raises the temperature of the first conduit to a temperature above the vaporization temperature of the precursor of the one or more process gases. In these embodiments, the first fluid passage is configured to supply the one or more process gases to the gas distributor. Furthermore, the second temperature-controlled housing includes a third housing portion and a fourth housing portion. The third housing portion includes a seventh surface and an eighth surface, the eighth surface opposing the seventh surface in a second direction transverse to the axial direction and facing the second conduit in a first direction opposite the second direction. The fourth housing portion includes a ninth surface and a tenth surface opposing the ninth surface in a first direction, the tenth surface facing the eighth surface in a second direction. The tenth surface includes a second channel configured to accommodate a portion of the second conduit therein. In one embodiment, the third housing portion includes a plurality of second openings located in the eighth surface; the fourth housing portion includes a plurality of second through-holes extending between the ninth and tenth surfaces; each of the second through-holes is aligned with a corresponding second opening of the second openings; and the second temperature-controlled housing further includes a plurality of second fasteners, each of the second fasteners extending through a corresponding second through-hole of the second through-holes and engaging with a corresponding second opening aligned with the corresponding second through-hole. In one embodiment, the fourth housing portion includes a first chamfered surface located on a first side of the ninth surface and a second chamfered surface located on a second side of the ninth surface, the first chamfered surface and the second chamfered surface extending between the ninth surface and the tenth surface. Furthermore, the second temperature-controlled housing further includes at least one thermocouple connected to one of the first chamfered surface and the second chamfered surface.In one embodiment, the at least one thermocouple includes a third thermocouple connected to the first chamfered surface and a fourth thermocouple connected to the second chamfered surface. In one embodiment, the tenth surface of the fourth housing portion includes a protrusion extending in the second direction; the fourth housing portion includes a fourth through-hole extending from the ninth surface through the protrusion; the fourth through-hole is configured to receive a third fastener therethrough; and the third fastener is configured to engage with the second portion to structurally connect the second temperature-controlled housing to the second portion. In one embodiment, the third housing portion includes a fifth through-hole extending between the seventh and eighth surfaces, and the fifth through-hole is configured to receive the protrusion in the tenth surface of the fourth housing portion therethrough. In one implementation of this embodiment, the fourth thermal insulator includes a second through-hole aligned with the fourth through-hole in the fourth housing portion, and the second through-hole in the fourth thermal insulator is configured to receive the third fastener therethrough. In one embodiment, the third thermal insulator is stacked between the fourth thermal insulator and a support surface extending between the first and second recessed areas of the second portion. In one embodiment, the second fluid interface assembly further includes one or more thermal insulators configured to at least partially thermally insulate the second portion from the second temperature-controlled housing. In one embodiment, the one or more thermal insulators comprise quartz. In another embodiment, the one or more thermal insulators comprise a third thermal insulator disposed between the fourth housing portion and a first corresponding portion of the second portion. In another embodiment, the one or more thermal insulators comprise a fourth thermal insulator disposed between the fourth housing portion and a second corresponding portion of the second portion. In another embodiment, the tenth surface of the fourth housing portion comprises a protrusion extending in the second direction; the fourth housing portion comprises a fourth through-hole extending from the ninth surface through the protrusion; the fourth through-hole is configured to receive a third fastener therethrough; and the third fastener is configured to engage the second portion to structurally connect the second temperature-controlled housing to the second portion. In one example of this embodiment, the third housing portion comprises a fifth through-hole extending between the seventh and eighth surfaces; and the fifth through-hole is configured to receive the protrusion in the tenth surface of the fourth housing portion therethrough. In one embodiment, the third housing portion includes an eleventh surface extending between the seventh and eighth surfaces; the fourth housing portion includes a twelfth surface extending between the ninth and tenth surfaces; and the second fluid disconnect abuts the eleventh and twelfth surfaces. In one embodiment, the third and fourth housing portions comprise aluminum.

[0202] Certain embodiments relate to an apparatus comprising a semiconductor processing chamber having a first portion and a second portion movably connected to the first portion in a first configuration, the first portion and the second portion defining a housing associated with the first configuration. The apparatus also includes at least one gas distributor configured to distribute one or more process gases within the housing and a first fluid interface assembly. The first fluid interface assembly also includes a first fluid disconnect, a first conduit extending in an axial direction and including a first end structurally connected to the first fluid disconnect, a first temperature-controlled housing at least partially surrounding and contacting the first conduit, and a second fluid interface assembly structurally connected to the second portion. The first temperature-controlled housing is structurally connected to the first portion and includes a first heater. The second fluid interface assembly includes a second fluid disconnect and a second conduit extending in an axial direction and including a first end structurally connected to the second fluid disconnect. Furthermore, at least one of the first portion and the second portion is movable between the first configuration and a second configuration. In the second configuration, the first portion and the second portion are spaced apart from each other in the axial direction. In the first configuration, the first and second fluid disconnects are configured to be fluidically connected to form a first fluid path across a contact interface between the first and second portions through the first and second conduits. Furthermore, the first temperature-controlled housing is configured to transfer thermal energy to the first conduit via the first heater. Furthermore, the thermal energy transferred to the first conduit raises the temperature of the first conduit to a temperature above the vaporization temperature of the precursor of the one or more process gases. The apparatus further includes a cover plate removably coupled to the second portion. The cover plate includes a surface facing the recessed region of the second portion in a direction transverse to the axial direction, and the surface of the cover plate is spaced apart from the second temperature-controlled housing in this direction. The second temperature-controlled housing is structurally connected to the second portion and is at least partially within the recessed region of the second portion. Furthermore, the recessed region of the second portion includes a first recessed region, a second recessed region further recessed into the second portion than the first recessed region, and a support surface extending between the first and second recessed regions. In a view transverse to the axial direction, the fourth housing portion has a T-shape including a web portion extending in the axial direction and a flange portion extending in the transverse direction. A third thermal insulator is stacked between the support surface of the recessed region and the first surface of each of the protruding portion of the tenth surface of the fourth housing portion and the flange portion of the fourth housing portion. In one example, the third thermal insulator includes a C-shaped structure at least partially surrounding the web portion of the fourth housing portion.

[0203] Certain embodiments relate to an apparatus comprising a semiconductor processing chamber having a first portion and a second portion movably connected to the first portion in a first configuration, the first portion and the second portion defining a housing associated with the first configuration. The apparatus also includes at least one gas distributor configured to distribute one or more process gases within the housing and a first fluid interface assembly. The first fluid interface assembly also includes a first fluid disconnect, a first conduit extending in an axial direction and including a first end structurally connected to the first fluid disconnect, a first temperature-controlled housing at least partially surrounding and contacting the first conduit, and a second fluid interface assembly structurally connected to the second portion. The first temperature-controlled housing is structurally connected to the first portion and includes a first heater. The second fluid interface assembly includes a second fluid disconnect and a second conduit extending in an axial direction and including a first end structurally connected to the second fluid disconnect. Furthermore, at least one of the first portion and the second portion is movable between the first configuration and a second configuration. In the second configuration, the first portion and the second portion are spaced apart from each other in the axial direction. In the first configuration, the first and second fluid disconnects are configured to be fluidically connected to form a first fluid path across a contact interface between the first and second portions through the first and second conduits. Furthermore, the first temperature-controlled housing is configured to transfer thermal energy to the first conduit via the first heater. Furthermore, the thermal energy transferred to the first conduit raises the temperature of the first conduit to above the vaporization temperature of the precursor of the one or more process gases. In one of these embodiments, the second end of the first conduit is fluidly connected to the gas distributor and the second end of the second conduit is fluidly connected to the precursor source. In one of these embodiments, the first portion forms a lid of the semiconductor processing chamber. In one of these embodiments, the first portion and the second portion comprise aluminum. Additional and / or Alternative Embodiments

[0204] Unless otherwise indicated, the embodiments shown should be understood as providing exemplary features of varying details of some embodiments. Therefore, unless otherwise indicated, the features, components, modules, layers, films, regions, aspects, structures, etc. (hereinafter individually or collectively referred to as "elements" or "elements") of the various diagrams may be combined, separated, interchanged, and / or rearranged in other ways without departing from the teachings of the present invention.

[0205] The terminology used herein is for the purpose of describing some embodiments and is not intended to be limiting. As used herein, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should be understood that the phrases "for each <item> of the one or more <items>," "each <item> of the one or more <items>," and / or the like, if used herein, encompass both single and multiple groups of items, i.e., the phrase "for each of..." is used in a programming language to refer to each item in the entire group of items being referred to. For example, if the group of items being referred to is a single item, then "each" will refer only to that single item (despite the fact that the dictionary definition of "each" is often defined as meaning "each of two or more things"), and does not mean that there must be at least two of those items. Similarly, the term "set" or "subset" itself should not be taken to necessarily include a plurality of items—it should be understood that a set or subset may contain only one member or multiple members (unless the context indicates otherwise). The terms "comprise," "comprising," "include," and / or "including" (when used in this specification) specify the presence of stated features, integers, steps, operations, components, parts, and / or groups thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, parts, and / or groups thereof. It should be noted that as used herein, the terms "substantially," "approximately," and other similar terms are used as terms of approximation rather than terms of degree, and are therefore used to account for inherent deviations in measuring, calculating, and / or providing values ​​as understood by those of ordinary skill in the art. Accordingly, unless otherwise indicated, the term "substantially" as used herein means within 5% of a reference value. For example, substantially perpendicular means within ±5% of parallel.

[0206] The use of cross hatching and / or shading in the accompanying drawings is generally provided to make the boundaries between adjacent elements clear. Therefore, the presence or absence of cross hatching or shading does not convey or indicate any preference or requirement for a particular material, material properties, size, ratio, commonality between the elements shown, and / or any other characteristics, attributes, characteristics, etc. of the elements, unless otherwise stated. Further, in the accompanying drawings, the sizes and relative sizes of the elements may be exaggerated for clarity and / or description purposes. Therefore, the sizes and relative sizes of the various elements are not necessarily limited to the sizes and relative sizes shown in the figures. When the embodiment can be implemented in different ways, the specific process sequence can be performed differently from the described sequence. For example, two consecutively described processes can be performed substantially simultaneously or in an order opposite to the described sequence.

[0207] When an element (e.g., a layer) is referred to as being "on," "connected to," or "coupled to" another component, it may be directly on, directly connected to, or directly coupled to the other element, or there may be at least one intervening element. However, when an element is referred to as being "directly on," "directly connected to," or "directly coupled to" another element, there are no intervening elements. Other terms and / or phrases (if used herein to describe relationships between elements) should be interpreted in a similar manner, such as "between" versus "directly between," "adjacent" versus "directly adjacent," "on" versus "directly on," etc. Further, the term "connected" may refer to physical, electrical, and / or fluidic connections. To this end, for purposes of the present invention, the phrase "fluidically connected" is used with respect to volumes, plenums, holes, etc. that can be interconnected to form a fluidic connection, similar to how the phrase "electrically connected" is used with respect to components that are connected together to form an electrical connection. The phrase "fluidically interposed" (if used) may be used to refer to a component, volume, plenum, or aperture that is fluidically connected to at least two other components, volumes, plenums, or apertures such that fluid flowing from one of these other components, volumes, plenums, or apertures to the other of these other components, volumes, plenums, or apertures flows through the "fluidically interposed" component before reaching the other of these other components, volumes, plenums, or apertures. For example, if a pump is fluidly interposed between a container and an outlet, fluid flowing from the container to the outlet flows through the pump before reaching the outlet. The phrase "fluidically adjacent" (if used) may be used to refer to the placement of a fluid element relative to another fluid element such that there is no potential configuration of fluid interposition between the two elements that could potentially disrupt fluid flow between the two fluid elements. For example, in a flow path in which a first valve, a second valve, and a third valve are sequentially disposed along the flow path, the first valve is fluidically adjacent to the second valve, the second valve is fluidically adjacent to both the first valve and the third valve, and the third valve is fluidically adjacent to the second valve.

[0208] For the purposes of the present invention, “at least one of X, Y ... and Z” and “at least one selected from the group consisting of X, Y ... and Z” may be interpreted as only X, only Y ..., only Z, or any combination of two or more of X, Y ... and Z, such as XYZ, XYY, YZ, and ZZ. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items.

[0209] Although the terms "first," "second," "third," etc., may be used herein to describe various elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another. Thus, the first element discussed below could be referred to as the second element without departing from the teachings of the present invention. For this reason, the use of these identifiers (e.g., "first element") should not be construed to imply or inherently suggest that another instance (e.g., "second element") necessarily exists. Further, any ordinal numbers (if any) used in this disclosure and the appended claims, such as (a), (b), (c) ... or (1), (2), (3) ... or the like, should be understood not to convey any particular order or sequence, unless such order or sequence is explicitly indicated. For example, if there are three steps labeled (i), (ii), and (iii), it should be understood that, unless otherwise indicated, these steps can be performed in any order (or even simultaneously, if not otherwise limited). For example, if step (ii) involves processing the element created in step (i), step (ii) can be considered to occur at some point after step (i). In a similar manner, if step (i) involves processing an element created in step (ii), the opposite should be understood.

[0210] Spatially relative terms, such as "beneath," "below," "under," "lower," "above," "upper," "over," "higher," "side" (e.g., as "sidewall"), and the like, may be used herein for descriptive purposes, and thereby to describe the spatial relationship of one element to at least one other element as shown in the figures. Spatially relative terms are intended to encompass different orientations of the device in use, operation, and / or manufacture in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" or "above" the other elements or features. Thus, the term "below" would encompass both above and below orientations. Furthermore, the device may be otherwise oriented (e.g., rotated 90 degrees or at other orientations), and the spatially relative descriptors used herein should be interpreted accordingly.

[0211] As used herein, the term "between" when used in conjunction with a range of values ​​should be understood to include both the starting and ending values ​​of the range unless otherwise indicated. For example, "between 1 and 5" should be understood to include the numbers 1, 2, 3, 4, and 5, rather than just the numbers 2, 3, and 4.

[0212] As used herein, the term "operably connected" should be understood to refer to a state in which two components and / or systems are connected (directly or indirectly) such that, for example, at least one component or system can control the other. For example, a controller may be described as being operably connected to (or operably connected to) a resistive heating unit, which includes the controller being connected to a sub-controller of the resistive heating unit, the resistive heating unit being electrically connected to a relay, the relay being configured to controllably connect and disconnect the resistive heating unit from a power source capable of providing an amount of power capable of powering the resistive heating unit to produce a desired degree of heating. The controller itself may not be able to directly supply such power to the resistive heating unit due to the currents involved, but it should be understood that the controller is still operably connected to the resistive heating unit.

[0213] As used herein, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly dictates otherwise. It should be understood that the phrases "for each <item> of the one or more <items>," "each <item> of the one or more <items>," and / or the like, if used herein, encompass both single groups of items and multiple groups of items, i.e., use of the phrase "for each of" means that it is used in a programming language to refer to each item in the entire group of items being referred to. For example, if the group of items being referred to is a single item, then "each" would refer only to that single item (despite the fact that the dictionary definition of "each" is often defined as meaning "each of two or more things"), and does not mean that there must be at least two of those items. Similarly, the terms "set" or "subset" should not themselves be taken to necessarily encompass a plurality of items—it should be understood that a set or subset may contain only one member or multiple members (unless the context dictates otherwise). In addition, the terms "comprises," "comprising," "includes," and / or "comprising" (when used in this specification) specify the presence of stated features, integers, steps, operations, elements, parts, and / or groups thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, parts, and / or groups thereof.

[0214] Various embodiments are described herein with reference to cross-sectional, isometric, perspective, plan, and / or exploded views, which are schematic illustrations of idealized embodiments and / or intermediate structures. Thus, variations from the illustrated shapes due to, for example, manufacturing techniques and / or tolerances are anticipated. Accordingly, the embodiments disclosed herein should not be construed as limited to the specific illustrated shapes of regions, but rather include deviations in shapes due to, for example, manufacturing. To this end, the regions illustrated in the figures may be schematic in nature, and the shapes of these regions may not reflect the actual shapes of regions of a device and, therefore, are not intended to be limiting.

[0215] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms (such as those defined in commonly used dictionaries) should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and should not be interpreted as idealized or overly formal unless explicitly defined as such herein.

[0216] According to the convention of the art, some embodiments are described and shown in the accompanying drawings with functional blocks, units and / or module angles. It will be understood by those skilled in the art that these blocks, units and / or modules are physically implemented by electronic (or optical) circuits, such as logic circuits, discrete components, microprocessors, hard-wired circuits, memory elements, wiring connections and the like, which can be formed using semiconductor-based manufacturing techniques or other manufacturing techniques. In the case where a block, unit and / or module is implemented by a microprocessor or other similar hardware, it can be programmed and controlled using software (e.g., microcode) to perform the various functions discussed herein, and optionally driven by firmware and / or software. It is also contemplated that each block, unit and / or module can be implemented by dedicated hardware, or as a combination of dedicated hardware performing certain functions and a processor performing other functions (e.g., one or more programmed microprocessors and related circuits). In addition, each block, unit and / or module of some embodiments can be physically divided into two or more interacting and discrete blocks, units and / or modules without departing from the concept of the present invention. Furthermore, the blocks, units and / or modules of some embodiments may be physically combined into more complex blocks, units and / or modules without departing from the teachings of the present invention.

[0217] Although the foregoing embodiments have been described in some detail for purposes of clarity of understanding, it will be apparent that certain changes and modifications may be practiced within the scope of the appended claims. It should be noted that there are many alternative ways of implementing the processes, systems, and apparatus of the disclosed embodiments. Accordingly, the embodiments are to be considered as illustrative and not restrictive, and the embodiments are not to be limited to the details given herein.

Claims

1. A device comprising: a semiconductor processing chamber comprising a first portion and a second portion movably coupled to the first portion in a first configuration, the first portion and the second portion defining an enclosure associated with the first configuration; at least one gas distributor configured to distribute one or more process gases within the enclosure; as well as A first fluid interface assembly comprising: a first fluid disconnect; a first conduit extending in an axial direction and including a first end structurally connected to the first fluid disconnect; a first temperature-controlled enclosure at least partially surrounding and contacting the first conduit, wherein the first temperature-controlled enclosure is structurally connected to the first portion and includes a first heater; and A second fluid interface assembly is structurally connected to the second portion, the second fluid interface assembly comprising: a second fluid disconnect; and a second conduit extending in the axial direction and comprising a first end structurally connected to the second fluid disconnect, in: At least one of the first portion and the second portion is movable between the first configuration and a second configuration; In the second configuration, the first portion and the second portion are spaced apart from each other in the axial direction; In the first configuration, the first fluid disconnect and the second fluid disconnect are configured to be fluidly connected to form a first fluid passage across a contact interface between the first portion and the second portion through the first conduit and the second conduit; The first temperature-controlled housing is configured to transfer thermal energy to the first conduit via the first heater; and The thermal energy transferred to the first conduit raises the temperature of the first conduit to above a vaporization temperature of a precursor of the one or more process gases.

2. An apparatus according to claim [0198], wherein the first fluid passage is configured to supply the one or more process gases to the gas distributor.

3. The apparatus of claim 2 or 3, wherein: The second fluid interface assembly further includes a second temperature controlled housing at least partially surrounding and contacting the second conduit; the second temperature-controlled housing being structurally connected to the second portion and comprising a second heater; The second temperature-controlled housing is configured to transfer thermal energy to the second conduit via the second heater; and The thermal energy transferred to the second conduit raises the temperature of the second conduit to above the vaporization temperature of the precursor.

4. The apparatus of any one of claims [0198]-3, wherein the first temperature-controlled housing is structurally connected to the first portion and within a through hole extending through the first portion.

5. The apparatus of claim 3, wherein the second temperature-controlled housing is structurally connected to the second portion and is at least partially within a recessed area of ​​the second portion.

6. The apparatus of claim [0198], wherein: The first fluid interface assembly further includes: a third conduit having a first end structurally connected to the first fluid disconnect; The first temperature-controlled housing at least partially surrounds and contacts the third conduit; The second fluid interface assembly further includes: a fourth conduit having a first end structurally connected to the second fluid disconnect; In the first configuration, the first fluid disconnect and the second fluid disconnect are further configured to be fluidically connected to form a second fluid passage across the contact interface between the first portion and the second portion through the third conduit and the fourth conduit; the second fluid passage being fluidly connected to a scavenge drain; The first temperature-controlled housing is further configured to transfer thermal energy to the third conduit via the first heater; and The thermal energy transferred to the third conduit raises the temperature of the third conduit to at least the vaporization temperature of the precursor.

7. The apparatus of claim 2, wherein the first temperature-controlled housing comprises: A first housing portion comprising: a first surface; and a second surface opposing the first surface in a first direction transverse to the axial direction and facing the first conduit in a second direction opposite to the first direction; and a second housing portion coupled to the first housing portion, the second housing portion comprising: a third surface; and A fourth surface is opposite to the third surface in the second direction, faces the second surface in the first direction, and includes a first channel configured to receive a portion of the first conduit therein.

8. The apparatus of claim [0199], wherein: the first housing portion including a plurality of first openings in the second surface; the second housing portion including a plurality of first through holes extending between the third surface and the fourth surface; Each of the first through holes is aligned with a corresponding first opening of the first opening; and The first temperature-controlled housing further includes a plurality of first fasteners, each of the first fasteners extending through a corresponding first through-hole among the first through-holes and engaging the corresponding first opening aligned with the corresponding first through-hole.

9. The device of claim 8 or 9, wherein the third surface of the second housing portion comprises: One or more alignment features configured to interface with one or more corresponding alignment features in at least one other component of the first temperature-controlled enclosure.

10. The apparatus of claim [0199] or 89, wherein the first temperature-controlled housing further comprises at least one thermocouple connected to the third surface of the second housing portion.

11. The apparatus of claim 10, wherein the at least one thermocouple comprises: a first thermocouple connected to the third surface of the second housing portion and located at a position overlapping the first channel in the first direction; as well as A second thermocouple is connected to the third surface of the second housing portion and is located overlapping a second channel formed in the fourth surface of the second housing portion, wherein the second channel is configured to receive a portion of a third conduit therein.

12. The apparatus of claim [0199] or claim 8, wherein: the fourth surface of the second housing portion includes a convex portion extending in the first direction; the second housing portion including a second through-hole extending from the third surface through the protrusion; The second through-hole is configured to receive a second fastener therethrough; and The second fastener is configured to engage the first portion to structurally connect the first temperature-controlled enclosure to the first portion.

13. The apparatus according to claim 12, wherein: The first housing portion includes a third through-hole extending between the first surface and the second surface; and The third through-hole is configured to receive the protrusion in the fourth surface of the second housing portion therethrough.

14. The apparatus of claim [0199] or claim 8, wherein the first fluid interface assembly further comprises: One or more thermal insulators configured to at least partially thermally insulate the first portion from the first temperature-controlled housing.

15. The apparatus of any one of claims 2, 6, and 7, wherein: The first fluid disconnect comprises a first body having a first surface; The second fluid disconnect comprises a second body having a second surface, the second surface facing the first surface in the axial direction; At least one of the first body and the second body includes a first blind hole concentrically aligned with the first conduit and the second conduit; as well as The first blind hole includes a gasket that is at least partially compressed between the first body and the second body in the first configuration and fluidly seals the first fluid passage between the first body and the second body.

16. The apparatus according to claim 6, wherein: said at least one of said first body and said second body further comprising a second blind hole concentrically aligned with said third conduit and said fourth conduit; as well as The second blind hole includes a gasket that is at least partially compressed between the first body and the second body in the first configuration and fluidly seals the second fluid passage between the first body and the second body.

17. The apparatus of claim 6, wherein the at least one of the first body and the second body further comprises one or more leak detection grooves fluidly connected to the first blind hole and the second blind hole.

18. The apparatus of any one of claims [0198], 2, 6, and 7, wherein the precursor source is an intermediate source configured to maintain the precursor in a liquid phase during storage.

19. The apparatus of claim 18, wherein the intermediate source comprises: A vaporizer is configured to flow the precursor into the first fluid passage as a vapor.

20. The apparatus of claim 18, wherein the intermediate source is disposed at a lower height than the semiconductor processing chamber.

21. The device according to any one of claims 18 to 20, wherein: The intermediate source is fluidly connected to a centralized source of the precursor; and The intermediate source is further configured to replenish the supply of the precursor from the centralized source.

22. The apparatus of claim 21, wherein the concentrated source is disposed at a lower height than the intermediate source.

23. The apparatus of claim 22, wherein: The intermediate source is supported on a floor of a manufacturing facility; and The concentrated source is supported below the floor of the fabrication facility.

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