A chemical mechanical polishing control method, control device, apparatus and storage medium

Abstract

The application discloses a chemical mechanical polishing control method, a control device, equipment and a storage medium, and relates to the technical field of chemical mechanical polishing, and specifically discloses a chemical mechanical polishing control method, a control device, equipment and a storage medium, which comprises the following steps: acquiring state information, current task information and next task information of any polishing chamber; determining whether the polishing chamber is in a waiting state according to the state information of the polishing chamber; if the polishing chamber is in the waiting state, determining the maximum duration for which the polishing chamber can be in the waiting state according to the current task information and the next task information of the polishing chamber; and performing a task object protection operation when the duration for which the polishing chamber is in the waiting state exceeds the maximum duration, wherein the task object protection operation is used for protecting the task object of the polishing chamber, so that the task object is not excessively corroded, and thus the problem that the task object of the polishing chamber is excessively corroded due to the long duration for which the polishing chamber is in the waiting state can be avoided.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing, in particular to a chemical mechanical polishing control method, a control device, an apparatus and a storage medium. BACKGROUND

[0002] Chemical mechanical polishing (CMP) is a technology for achieving global planarization of a surface by using chemical corrosion and mechanical removal. However, in the chemical mechanical polishing process, the polishing task object (such as a wafer) is often over-corroded, which seriously affects the performance of the manufactured semiconductor device. SUMMARY

[0003] The present application discloses a chemical mechanical polishing control method, a control device, an apparatus and a storage medium to solve the problem of over-corrosion of the polishing task object.

[0004] In a first aspect, the present application discloses a chemical mechanical polishing control method, comprising: obtaining state information, current task information and next task information of any polishing chamber; determining whether the polishing chamber is in a waiting state according to the state information of the polishing chamber; if the polishing chamber is in the waiting state, determining a maximum duration that the polishing chamber can be in the waiting state according to the current task information and the next task information of the polishing chamber, and performing a task object protection operation when the duration that the polishing chamber is in the waiting state exceeds the maximum duration; the task object protection operation is used to protect the task object of the polishing chamber so that the task object is not over-corroded.

[0005] In some embodiments of the present application, the determination of the maximum duration that the polishing chamber can be in the waiting state according to the current task information and the next task information of the polishing chamber comprises: determining whether the types of the current task object and the next task object of the polishing chamber are the same according to the current task information and the next task information of the polishing chamber; if the types of the current task object and the next task object of the polishing chamber are different, determining the maximum duration that the polishing chamber can be in the waiting state according to the types of the current task object and the next task object; if the types of the current task object and the next task object of the polishing chamber are the same, determining the maximum duration that the polishing chamber can be in the waiting state according to the polishing parameters of the current task object and the next task object.

[0006] In some embodiments of the present application, the type of the task object comprises a control sheet or a product sheet, and the determining the maximum duration that the polishing chamber can be in the waiting state according to the type of the current task object and the type of the next task object comprises: if the type of the current task object is a control sheet and the type of the next task object is a product sheet, determining that the maximum duration that the polishing chamber can be in the waiting state is a first maximum duration; and the first maximum duration is used to limit the maximum waiting duration of the polishing chamber between the control sheet and the product sheet.

[0007] In some embodiments of the present application, the polishing parameter comprises a polishing step, and the determining the maximum duration that the polishing chamber can be in the waiting state according to the polishing parameter of the current task object and the polishing parameter of the next task object comprises: if the current task object and the next task object are the same product sheet, and the polishing steps of the current task object and the next task object are different, determining that the maximum duration that the polishing chamber can be in the waiting state is a second maximum duration; the second maximum duration is used to limit the maximum waiting duration of the polishing chamber between different polishing steps of the same product sheet; if the current task object and the next task object are different product sheets, and the polishing film layers of the current task object and the next task object are different, determining that the maximum duration that the polishing chamber can be in the waiting state is a third maximum duration; the third maximum duration is used to limit the maximum waiting duration of the polishing chamber between product sheets with different polishing film layers; if the current task object and the next task object are different product sheets of the same batch, and the polishing numbers of the current task object and the next task object are different, determining that the maximum duration that the polishing chamber can be in the waiting state is a fourth maximum duration; and the fourth maximum duration is used to limit the maximum waiting duration of the polishing chamber between different product sheets of the same batch.

[0008] In some embodiments of the present application, the method further comprises: simulating the execution of the current task and the next task of the polishing chamber, and determining the maximum duration according to the simulation result.

[0009] In some embodiments of the present application, the executing the task object protection operation comprises: executing an alarm operation.

[0010] In some embodiments of the present application, the maximum duration ranges from 0 to 10 minutes.

[0011] In a second aspect, the present application discloses a chemical mechanical polishing control device, comprising a memory and a processor; the memory is used to store a computer program; and the processor is used to realize the chemical mechanical polishing control method according to any one of the above when executing the computer program.

[0012] In a third aspect, the present application discloses a chemical mechanical polishing device comprising the chemical mechanical polishing control device as described above.

[0013] In a fourth aspect, the present application discloses a computer readable storage medium, wherein a computer program is stored in the computer readable storage medium, and the computer program is executed by a processor to implement the chemical mechanical polishing control method according to any one of the above.

[0014] The chemical mechanical polishing control method, the control device, the device and the storage medium disclosed by the present application comprise obtaining state information, current task information and next task information of any polishing chamber, determining whether the polishing chamber is in a waiting state according to the state information of the polishing chamber, if the polishing chamber is in the waiting state, determining a maximum duration that the polishing chamber can be in the waiting state according to the current task information and the next task information of the polishing chamber, and performing a task object protection operation when the duration that the polishing chamber is in the waiting state exceeds the maximum duration, the task object protection operation being used to protect a task object of the polishing chamber so that the task object is not excessively corroded, thereby avoiding the problem that the task object of the polishing chamber is excessively corroded due to the long duration that the polishing chamber is in the waiting state. BRIEF DESCRIPTION OF DRAWINGS

[0015] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the background art, the drawings needed to be used in the embodiments of the present application or the background art will be described below.

[0016] Figure 1 FIG. 1 is a structural schematic diagram of a chemical mechanical polishing device disclosed by an embodiment of the present application.

[0017] Figure 2 FIG. 2 is a flowchart of a chemical mechanical polishing control method disclosed by an embodiment of the present application.

[0018] Figure 3 FIG. 3 is a structural schematic diagram of a chemical mechanical polishing control device disclosed by an embodiment of the present application. DETAILED DESCRIPTION

[0019] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0020] As Figure 1As shown, the chemical mechanical polishing device generally comprises a plurality of polishing chambers, a plurality of cleaning chambers and a plurality of drying chambers, for example, comprising a first polishing chamber 111 to a fourth polishing chamber 114, a first cleaning chamber 121 and a second cleaning chamber 122, a first drying chamber 131 and a second drying chamber 132. It should be noted that, Figure 1 Other chambers in the above are input chambers or output chambers, etc.

[0021] In the process of chemical mechanical polishing of the wafer, firstly, the wafer is controlled to enter the first polishing chamber 111 to the fourth polishing chamber 114 in sequence, so as to perform rough polishing, fine polishing and polishing on the wafer in the first polishing chamber 111 to the fourth polishing chamber 114 respectively, then the wafer is controlled to enter the first cleaning chamber 121 and the second cleaning chamber 122 in sequence, so as to clean the polishing liquid remaining on the surface of the wafer in the first cleaning chamber 121 and the second cleaning chamber 122, and finally the wafer is controlled to enter the first drying chamber 131 and the second drying chamber 132 in sequence, so as to dry the wafer in the first drying chamber 131 and the second drying chamber 132.

[0022] And, in order to improve the polishing efficiency, a plurality of wafers such as the first wafer 101 to the ninth wafer 109 are generally controlled to enter the first polishing chamber 111 to the fourth polishing chamber 114, the first cleaning chamber 121 and the second cleaning chamber 122, the first drying chamber 131 and the second drying chamber 132 in sequence according to a preset path.

[0023] However, the inventors have found that in the process of chemical mechanical polishing of a plurality of wafers, due to different polishing time, cleaning time or drying time of different wafers, etc., some polishing chambers need to wait for a long time before entering the next polishing task after completing a polishing task, for example, if the cleaning time of the first wafer 101 is too long, the fourth polishing chamber 114 will be in a waiting state for a long time after completing the polishing of the fourth wafer 104, thereby causing the wafer such as the fourth wafer 104 in the polishing chamber to be excessively corroded by the polishing liquid remaining on the surface of the wafer, thereby causing the semiconductor device made of the wafer to have poor performance.

[0024] Therefore, the present application discloses a chemical mechanical polishing control scheme, according to the state information of the polishing chamber, when the polishing chamber is in a waiting state, according to the current task information and the next task information of the polishing chamber, the maximum duration that the polishing chamber can be in the waiting state is determined, and when the duration that the polishing chamber is in the waiting state exceeds the maximum duration, a task object protection operation is performed, so that the task object is not excessively corroded.

[0025] As an optional implementation of the disclosed content of this invention, an embodiment of this invention discloses a chemical mechanical grinding control method, such as... Figure 2 As shown, the method includes:

[0026] S101: Obtain the status information, current task information, and next task information of any grinding chamber.

[0027] by Figure 1 Taking the chemical mechanical grinding equipment shown as an example, during the operation of the chemical mechanical grinding equipment, the status information, current task information and next task information of any grinding chamber will be acquired in real time. The status information indicates the status of the grinding chamber, the current task information is the information of the task currently being performed by the grinding chamber, and the next task information is the information of the next task to be performed by the grinding chamber.

[0028] The status information includes working status information, waiting status information, or power-off status information. The working status information indicates that the grinding chamber is in a working state, the waiting status information indicates that the grinding chamber is in a waiting state, and the power-off status information indicates that the grinding chamber is in a power-off state. The task information includes the type of the task object and the grinding parameters of the task. The grinding parameters of the object include the grinding steps of the object, the grinding film layer of the object, and the grinding number of the object.

[0029] S102: Determine whether the grinding chamber is in a waiting state based on the status information of the grinding chamber.

[0030] After obtaining the status information of any grinding chamber, it can be determined whether the grinding chamber is in a waiting state based on the status information. For example, if the obtained status information of the grinding chamber is a waiting state, it is determined that the grinding chamber is in a waiting state; if the obtained status information of the grinding chamber is a working state, it is determined that the grinding chamber is not in a waiting state. If it is determined that the grinding chamber is not in a waiting state, the control flow ends; if it is determined that the grinding chamber is in a waiting state, the process proceeds to step S103.

[0031] S103: If the grinding chamber is in a waiting state, the maximum duration for which the grinding chamber can remain in a waiting state is determined based on the current task information and the next task information of the grinding chamber. If the duration for which the grinding chamber remains in a waiting state exceeds the maximum duration, a task object protection operation is performed. The task object protection operation is used to protect the task objects in the grinding chamber so that the task objects are not excessively corroded.

[0032] According to the state information of any one of the polishing chambers, after it is determined that the polishing chamber is in the waiting state, the maximum duration that the polishing chamber can be in the waiting state is determined according to the current task information and the next task information of the polishing chamber. The maximum duration that the polishing chamber can be in the waiting state can be set in advance for different current task information and / or next task information. It should be noted that the maximum duration that the polishing chamber can be in the waiting state can be the same or different for different current task information and / or next task information.

[0033] Based on this, the duration that the polishing chamber is in the waiting state can be obtained, and the task object protection operation is performed when the duration that the polishing chamber is in the waiting state exceeds the maximum duration. The task object protection operation is used to protect the task object of the polishing chamber, so that the task object is not over-eroded. In this way, the problem that the task object of the polishing chamber is over-eroded due to the long duration that the polishing chamber is in the waiting state can be avoided. The task object includes but is not limited to a wafer.

[0034] In some embodiments of the present application, the task object protection operation includes an alarm operation. That is, the operator can be instructed to protect the task object by an alarm indication device, for example, the task object such as a wafer is removed from the polishing chamber, and the polishing liquid remaining on the surface of the task object such as a wafer is cleaned. Of course, the present application is not limited to this, and in other embodiments, the task object protection operation includes moving the task object to a cleaning chamber, or flushing the task object in the polishing chamber.

[0035] In some embodiments of the present application, the type of the current task object and the next task object of any one of the polishing chambers can be determined according to the current task information and the next task information of the polishing chamber. For example, the type of the current task object of the polishing chamber is determined according to the current task information of the polishing chamber, the type of the next task object of the polishing chamber is determined according to the next task information of the polishing chamber, and whether the types of the two task objects are the same is determined.

[0036] If the types of the current task object and the next task object of the polishing chamber are different, the maximum duration that the polishing chamber can be in the waiting state is determined according to the types of the current task object and the next task object. Based on this, the task object protection operation is performed when the duration that the polishing chamber is in the waiting state exceeds the maximum duration, so that the problem that the polishing time, the cleaning time or the drying time of the adjacent two tasks are different due to the different types of the task objects of the adjacent two tasks, and the current task object of the polishing chamber is over-eroded by the polishing liquid remaining on the surface of the current task object due to the long waiting time after the current task is completed before entering the next task can be avoided.

[0037] If the type of the current task object and the next task object of the polishing chamber is the same, a maximum duration that the polishing chamber can be in the waiting state is determined according to the polishing parameters of the current task object and the next task object. Based on this, the problem that the polishing chamber waits for a long time after completing the current task before entering the next task, which is caused by the different polishing time, cleaning time or drying time of the adjacent two tasks due to the same type but different polishing parameters of the task objects of the adjacent two tasks, and the problem that the current task object of the polishing chamber is excessively corroded by the polishing liquid remaining on the surface of the current task object, can be solved by performing a task object protection operation when the duration that the polishing chamber is in the waiting state exceeds the maximum duration.

[0038] In some embodiments of the present application, the type of the task object of the polishing chamber includes a control wafer and a product wafer, the control wafer includes a wafer polished by the polishing chamber during a preheating process, and the product wafer includes a wafer polished by the polishing chamber during a formal working process. If the type of the current task object of the polishing chamber is the control wafer and the type of the next task object is the product wafer, the maximum duration that the polishing chamber can be in the waiting state is determined as a first maximum duration, and the first maximum duration is used to limit the maximum waiting duration of the polishing chamber between the control wafer and the product wafer.

[0039] In other embodiments, the polishing parameters of the task object include a polishing step. If the current task object and the next task object of the polishing chamber are the same product wafer, and the polishing steps of the current task object and the next task object of the polishing chamber are different, for example, the polishing step of the current task object of the polishing chamber is coarse polishing, and the polishing step of the next task object of the polishing chamber is fine polishing, the maximum duration that the polishing chamber can be in the waiting state is determined as a second maximum duration, and the second maximum duration is used to limit the maximum waiting duration of the polishing chamber between different polishing steps of the same product wafer.

[0040] In other embodiments, the polishing parameters of the task object include a polishing film layer. If the current task object and the next task object of the polishing chamber are different product wafers, and the polishing film layers of the current task object and the next task object of the polishing chamber are different, for example, the polishing film layer of the current task object of the polishing chamber is a metal film layer, and the polishing film layer of the next task object of the polishing chamber is a non-metal film layer, the maximum duration that the polishing chamber can be in the waiting state is determined as a third maximum duration, and the third maximum duration is used to limit the maximum waiting duration of the polishing chamber between product wafers with different polishing film layers.

[0041] In some embodiments, the polishing parameters of the task object include a polishing number, and if the current task object of the polishing chamber and the next task object are different product pieces of the same batch, and the polishing numbers of the current task object and the next task object of the polishing chamber are different, for example, the polishing number of the current task object of the polishing chamber is 104, and the polishing number of the next task object of the polishing chamber is 105, wherein the polishing number is used to distinguish different product pieces of the same batch, then the maximum time length during which the polishing chamber can be in the waiting state is determined as a fourth maximum time length, and the fourth maximum time length is used to limit the maximum waiting time length of the polishing chamber between different product pieces of the same batch.

[0042] In some embodiments of the present application, the current task and the next task of the polishing chamber can be simulated, and the maximum time length can be determined according to the simulation result. For example, in the case that the type of the current task object of the polishing chamber is a control piece, and the type of the next task object is a product piece, the current task and the next task of the polishing chamber can be simulated, and the first maximum time length can be determined according to the simulation result; in the case that the current task object and the next task object of the polishing chamber are the same product piece, and the polishing steps of the current task object and the next task object of the polishing chamber are different, the current task object and the next task object of the polishing chamber are the same product piece, and the polishing steps of the current task object and the next task object of the polishing chamber are different, the second maximum time length can be determined; in the case that the current task object and the next task object of the polishing chamber are different product pieces, and the polishing film layers of the current task object and the next task object of the polishing chamber are different, the current task and the next task of the polishing chamber can be simulated, and the third maximum time length can be determined according to the simulation result; in the case that the current task object and the next task object of the polishing chamber are different product pieces of the same batch, and the polishing numbers of the current task object and the next task object of the polishing chamber are different, the current task and the next task of the polishing chamber can be simulated, and the fourth maximum time length can be determined according to the simulation result.

[0043] Of course, the present application is not limited to this, and in other embodiments, the maximum time length such as the first maximum time length, the second maximum time length, the third maximum time length and the fourth maximum time length can also be set according to experience. The range of the maximum time length such as the first maximum time length, the second maximum time length, the third maximum time length or the fourth maximum time length is 0 to 10 min, or in other words, the maximum time length such as the first maximum time length, the second maximum time length, the third maximum time length or the fourth maximum time length can be any time length within 0 to 10 min.

[0044] It can be understood that, in the embodiments of the present application, only the type of the object and the polishing parameter in the current task information and the next task information are taken as examples for illustration, but the present application is not limited thereto, and in other embodiments, the maximum duration during which the polishing chamber can be in the waiting state can also be determined according to other information in the current task information and the next task information, which will not be described herein again.

[0045] As an optional implementation of the present disclosure, the embodiments of the present application disclose a chemical mechanical polishing control device, which comprises a memory for storing a computer program and a processor for implementing the chemical mechanical polishing control method disclosed in any of the above embodiments when executing the computer program. The control device comprises an APC (Advanced Process Control) device and the like.

[0046] In some embodiments of the present application, the control device can be a terminal, and its internal structure diagram can be as shown in Figure 3 The control device can comprise a processor, a memory, an input / output interface, a communication interface, a display unit and an input device. The processor, the memory and the input / output interface are connected through a system bus, and the communication interface, the display unit and the input device are connected to the system bus through the input / output interface. The processor of the control device is used to provide computing and control capabilities. The memory of the control device comprises a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the operating system and the computer program in the non-volatile storage medium to run. The input / output interface of the control device is used to exchange information between the processor and external devices. The communication interface of the control device is used to communicate with external terminals in a wired or wireless manner. The wireless manner can be achieved through WIFI, mobile cellular network, NFC (Near Field Communication) or other technologies. The computer program is executed by the processor to implement the control method of the chemical mechanical polishing involved above. The display unit of the control device is used to form a visually visible picture, which can be a display screen, a projection device or a virtual reality imaging device. The display screen can be a liquid crystal display screen or an electronic ink display screen. The input device of the control device can be a touch layer overlaid on the display screen, or a key, trackball or touchpad arranged on the shell of the control device, or an external keyboard, touchpad or mouse and the like.

[0047] Those skilled in the art can understand that Figure 3 The structure shown in

[0048] As another optional implementation of the present disclosure, the embodiment of the present disclosure further discloses a chemical mechanical grinding device comprising the control device disclosed in any of the above embodiments. Of course, the chemical mechanical grinding device is described in detail with reference to the above embodiments. Figure 1 The chemical mechanical grinding device further comprises a plurality of grinding chambers, a plurality of cleaning chambers, a plurality of drying chambers, etc., which are not described herein.

[0049] As another optional implementation of the present disclosure, the embodiment of the present disclosure further discloses a computer readable storage medium, wherein a computer program is stored in the computer readable storage medium, and the computer program is executed by a processor to implement the chemical mechanical grinding control method disclosed in any of the above embodiments.

[0050] As another optional implementation of the present disclosure, the embodiment of the present disclosure further discloses a computer product comprising a computer program, and the computer program is executed by a processor to implement the chemical mechanical grinding control method disclosed in any of the above embodiments.

[0051] The technical features of the above embodiments can be combined arbitrarily. In order to make the description simple, all possible combinations of the technical features in the above embodiments are not described, however, as long as the combinations of the technical features do not exist contradictions, they should be considered as the scope of the present disclosure.

[0052] The above embodiments only express several implementation manners of the present disclosure, and the description is more specific and detailed, but it should not be understood as a limitation on the scope of the patent. It should be pointed out that for ordinary skilled in the art, without departing from the concept of the present disclosure, a number of modifications and improvements can be made, which are all within the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be subject to the appended claims.

Claims

1. A method for controlling chemical mechanical grinding, characterized in that, include: Obtain the status information, current task information, and next task information for any grinding chamber; Based on the status information of the grinding chamber, determine whether the grinding chamber is in a waiting state; If the grinding chamber is in a waiting state, the maximum duration for which the grinding chamber can remain in a waiting state is determined based on the current task information and the next task information of the grinding chamber. If the duration for which the grinding chamber remains in a waiting state exceeds the maximum duration, a task object protection operation is performed. The task object protection operation is used to protect the task object of the grinding chamber so that the task object is not excessively corroded. The step of determining the maximum duration for which the grinding chamber can remain in a waiting state based on the current task information and the next task information of the grinding chamber includes: determining whether the types of the current task object and the next task object of the grinding chamber are the same based on the current task information and the next task information of the grinding chamber; if the types of the current task object and the next task object of the grinding chamber are different, then determining the maximum duration for which the grinding chamber can remain in a waiting state based on the types of the current task object and the next task object; if the types of the current task object and the next task object of the grinding chamber are the same, then determining the maximum duration for which the grinding chamber can remain in a waiting state based on the grinding parameters of the current task object and the next task object. The grinding parameters include grinding steps. Determining the maximum waiting time for the grinding chamber based on the grinding parameters of the current task object and the next task object includes: if the current task object and the next task object are the same product piece, and the grinding steps of the current task object and the next task object are different, then the maximum waiting time for the grinding chamber is determined to be a second maximum waiting time; the second maximum waiting time is used to limit the maximum waiting time of the grinding chamber between different grinding steps of the same product piece; if the current task object and the next task object are different product pieces, and the grinding parameters of the current task object and the next task object are different, then the maximum waiting time for the grinding chamber is determined to be a second maximum waiting time. If the polishing film layer of the previous task object and the next task object are different, then the maximum waiting time for the polishing chamber is determined to be the third maximum time. The third maximum time is used to limit the maximum waiting time of the polishing chamber between product wafers with different polishing film layers. If the current task object and the next task object are different product wafers in the same batch, and the polishing numbers of the current task object and the next task object are different, then the maximum waiting time for the polishing chamber is determined to be the fourth maximum time. The fourth maximum time is used to limit the maximum waiting time of the polishing chamber between different product wafers in the same batch.

2. The chemical mechanical grinding control method according to claim 1, characterized in that, The type of the task object includes control wafers or product wafers. Determining the maximum duration for which the grinding chamber can remain in a waiting state based on the types of the current task object and the next task object includes: If the current task object is a control wafer and the next task object is a product wafer, then the maximum duration for which the grinding chamber can remain in a waiting state is determined to be a first maximum duration; the first maximum duration is used to limit the maximum waiting time of the grinding chamber between the control wafer and the product wafer.

3. The chemical mechanical grinding control method according to claim 1, characterized in that, Also includes: The current and next tasks of the grinding chamber are simulated, and the maximum duration is determined based on the simulation results.

4. The chemical mechanical grinding control method according to claim 1, characterized in that, The protection operations for the task object include: performing an alarm operation.

5. The chemical mechanical grinding control method according to claim 1, characterized in that, The maximum duration is in the range of 0-10 minutes.

6. A chemical mechanical grinding control device, characterized in that, Including memory and processor; The memory is used to store computer programs; The processor is used to implement the chemical mechanical grinding control method according to any one of claims 1 to 5 when executing the computer program.

7. A chemical mechanical grinding apparatus, characterized in that, Includes the chemical mechanical grinding control device as described in claim 6.

8. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores a computer program that, when executed by a processor, implements the chemical mechanical grinding control method according to any one of claims 1 to 5.

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