Novel chip and forming method thereof

Abstract

The invention relates to a novel chip and a forming method thereof, the novel chip comprises a main body plate, the top surface of the main body plate is provided with a flow channel, the bottom of the tail end of the flow channel is provided with a through liquid outlet hole, and the liquid inlet end of the flow channel is communicated with an external liquid supply device; a piezoelectric structure is formed on the top surface of the top plate, the top plate is attached to the top surface of the main body plate, the top plate blocks the top opening of the flow channel, and the acting end of the piezoelectric structure is located over the flow channel; the bottom plate is provided with a spraying hole, the bottom plate is attached to the bottom face of the main body plate, the spraying hole is communicated with the liquid outlet hole, the cross section area of the liquid outlet hole is larger than that of the spraying hole, and all orthographic projections of the spraying hole on the bottom face of the main body plate fall into the liquid outlet hole. The runner is formed in the top surface of the main body plate, and the combined top plate blocks the top end of the runner and serves as the vibration plate, so that the surface smoothness of the main body plate is guaranteed, and the combination quality and the forming quality of all structures are guaranteed.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of inkjet printing technology, and in particular to a new type of chip and a forming method thereof. BACKGROUND

[0002] In the display device processing and forming technology, the inkjet printing technology can accurately spray small droplets (volume: picoliter or femtoliter) at the required position as a non-contact, non-pressure and non-mask technology, and a thin film is formed after the solvent is volatilized, dried and solidified. Therefore, it is easy to form a display device with extremely high resolution, especially when processing large-size panels, which has more advantages. Conventionally, piezoelectric nozzles are used for inkjet processing.

[0003] In the related art, the piezoelectric nozzle includes a chip and a cartridge, and the cartridge supplies the chip with functional liquid, and the functional liquid is sprayed by controlling the chip. Specifically, the chip includes a top plate and a bottom plate combined together, a flow channel is formed on the bottom surface of the top plate, a piezoelectric structure is arranged on the top surface of the top plate, and a spray hole is formed on the bottom plate, and the chip with the flow channel in the inside and the piezoelectric structure on the top is formed by the combination of the top plate.

[0004] The chip is generally made of a silicon wafer, and the thickness of the silicon wafer is relatively thick after it is factory-finished, and the surface thereof is relatively smooth to facilitate the formation of a piezoelectric structure and the like on the surface. Since the top surface of the top plate needs to be formed with a piezoelectric structure and the bottom surface of the top plate needs to be combined with the bottom plate, the smoothness of the top and bottom surfaces of the top plate needs to be ensured.

[0005] Since the thickness of the top plate is relatively thick, when etching the flow channel on the bottom surface of the top plate, the depth of the flow channel needs to be relatively deep to ensure that the top wall of the formed flow channel is relatively thin to form a vibrating plate, which is likely to cause the top plate to be burnt and the like, thereby affecting the forming quality of the chip. Generally, the silicon wafer is thinned after factory-finished, and then the flow channel is etched to reduce the etching depth.

[0006] However, due to the limitation of the thinning process of the silicon wafer, after being thinned by mechanical polishing, the surface of the thinned silicon wafer becomes rough, which affects the forming quality of the piezoelectric structure and the combination quality of the top plate and the bottom plate, and affects the forming quality of the chip. SUMMARY

[0007] The embodiments of the present application provide a new type of chip and a forming method thereof to solve the technical problem that the surface of the top plate of the chip in the related art is rough, which adversely affects the forming of the piezoelectric structure and the combination quality of the top plate and the bottom plate, and affects the forming quality of the chip.

[0008] In a first aspect, a new type of chip is provided, which includes:

[0009] A main body plate, wherein a flow channel is provided on the top surface of the main body plate, a liquid outlet hole is provided at the bottom of the end of the flow channel, and the liquid inlet end of the flow channel is connected to an external liquid supply device;

[0010] A top plate, wherein a piezoelectric structure is formed on the top surface of the top plate, the top plate is attached to the top surface of the main plate, the top plate blocks the top opening of the flow channel, and the active end of the piezoelectric structure is arranged directly above the flow channel;

[0011] A bottom plate, wherein a spray hole is provided on the bottom plate, the bottom plate is attached to the bottom surface of the main body plate, and the spray hole is connected to the liquid outlet hole, the cross-sectional area of ​​the liquid outlet hole is larger than the cross-sectional area of ​​the spray hole, and the orthographic projection of the spray hole on the bottom surface of the main body plate falls entirely into the liquid outlet hole.

[0012] In some embodiments, there are multiple flow channels, and the multiple flow channels are arranged at intervals; the piezoelectric structure includes multiple active ends, and the multiple active ends correspond to the multiple flow channels respectively; there are multiple injection holes, and the multiple injection holes are respectively connected to the multiple liquid outlet holes.

[0013] In some embodiments, a liquid inlet groove is provided on the bottom surface of the main body plate, one end of the liquid inlet groove is connected to the flow channel, and the other end of the liquid inlet groove is connected to the external liquid supply device.

[0014] In some embodiments, a screening structure is provided in the flow channel, and the screening structure increases the area of ​​the inner wall of the flow channel; the screening structure includes at least one block, which is fixed in the flow channel, and the block divides the inner channel of the flow channel into multiple paths, and the functional fluid is suitable for flowing through the multiple paths.

[0015] In some embodiments, a flow limiting structure is arranged in the flow channel. In the flow direction of the functional fluid, the screening structure and the flow limiting structure are arranged in sequence. The flow limiting structure is used to limit the backflow of the functional fluid in the flow channel. The flow limiting structure includes a flow limiting block, which is arranged in the middle of the flow channel and blocks part of the flow channel.

[0016] Wherein, the cross-sectional area of ​​the flow channel provided with the flow-limiting structure portion gradually decreases along the flow direction of the functional fluid.

[0017] The beneficial effects of the technical solution provided by this application include:

[0018] The embodiment of the application provides a novel chip, since a flow channel is directly arranged on the top surface of a main plate, the opening of the top part of the flow channel is blocked by bonding a top plate on the top surface of the main plate, the top plate is used as a vibrating plate, and a piezoelectric structure is arranged on the top plate. Therefore, the depth of the flow channel does not need to be additionally deepened to form a thin-wall feature, the etching depth is shallow during processing of the flow channel, the etching difficulty is low, the main plate is not easy to be glued and burned, and the processing quality of the flow channel is ensured.

[0019] Since the main plate is thinned without reducing the process difficulty, the main plate is in a factory state, the smoothness of the upper and lower surfaces of the main plate is better, the placement flatness of the main plate during processing of the flow channel and other structures on the processing table is better, and the etching precision is ensured.

[0020] In addition, since the through liquid outlet holes are arranged at the bottom of the flow channel, the depth consistency of the plurality of liquid outlet holes is better, the through spray holes are arranged on the bottom plate, the consistency of the plurality of spray holes is better, the forming quality of the chip is improved, the flow resistance consistency of the functional liquid in different spray holes is better, the piezoelectric structure drives the functional liquid to be sprayed from the plurality of spray holes, the functional liquid in part of the flow channels is not easy to flow back, the printing consistency is ensured, and the printing quality is ensured.

[0021] In a second aspect, a forming method of a novel chip is provided, which is used for forming the novel chip as described above, and includes the following steps.

[0022] A silicon wafer is obtained as a main plate, and the surface of the main plate is cleaned;

[0023] A flow channel is etched on the top surface of the main plate;

[0024] Through liquid outlet holes are etched on the bottom surface of the end of the flow channel;

[0025] An SOI silicon wafer is obtained, and the top surface of the SOI silicon wafer is bonded and fixed to the top surface of the main plate;

[0026] The bottom silicon layer and the buried oxygen layer of the SOI silicon wafer are sequentially etched and removed to form a top plate;

[0027] A piezoelectric structure is formed on the top surface of the top plate;

[0028] A bottom plate is obtained, and the bottom plate is bonded to the bottom surface of the main plate;

[0029] Spray holes are etched on the bottom plate.

[0030] In some embodiments, the etching of the flow channel on the top surface of the main plate further includes:

[0031] A stop block and a flow limiting block are etched in the flow channel.

[0032] In some embodiments, before the flow channel is formed on the top surface of the main plate, a liquid inlet groove is formed on the bottom surface of the main plate; and while the liquid outlet hole is etched through the bottom surface of the end of the flow channel, a communication hole is etched in the flow channel and communicates with the liquid inlet groove.

[0033] In some embodiments, the piezoelectric structure formed on the top surface of the top plate includes:

[0034] A first electrode layer is grown on the top surface of the top plate;

[0035] A piezoelectric thin film layer is grown on the first electrode layer;

[0036] A second electrode layer is grown on the piezoelectric thin film layer;

[0037] The first electrode layer, the piezoelectric thin film layer, and the second electrode layer are etched on the top plate to form a first electrode, a piezoelectric thin film, and a second electrode.

[0038] In some embodiments, the material of the bottom plate includes a hydrophobic material.

[0039] Another embodiment of the present application provides a forming method of a new chip. Since the forming method is used to form the new chip as described above, the beneficial effects of the forming method are consistent with those of the new chip, which will not be repeated here. BRIEF DESCRIPTION OF DRAWINGS

[0040] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed in the embodiment description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0041] Figure 1 A schematic diagram of the new chip provided by the embodiments of the present application is shown;

[0042] Figure 2 A partial exploded view of the new chip provided by the embodiments of the present application is shown;

[0043] Figure 3 A partial exploded view of the new chip provided by the embodiments of the present application is shown; Figure 2 An enlarged view of point P in the middle;

[0044] Figure 4 A partial exploded view of the new chip provided by the embodiments of the present application is shown;

[0045] Figure 5 A schematic diagram of the piezoelectric structure provided by the embodiments of the present application is shown;

[0046] Figure 6A new chip internal structure schematic diagram provided by the embodiment of the present application is shown in the figure.

[0047] Figure 7 A flow chart of a new chip forming method provided by another embodiment of the present application is shown in the figure.

[0048] In the figure: 1, main plate; 2, top plate; 3, bottom plate; 4, piezoelectric structure; 41, first electrode; 42, piezoelectric film; 43, second electrode; a, flow channel; a1, screening structure; a2, flow limiting structure; b, liquid outlet hole; c, liquid inlet groove; d, communication hole; e, jet hole; A, SOI silicon wafer; A1, top silicon layer; A2, buried oxygen layer; A3, bottom silicon layer; B1, first electrode layer; B2, piezoelectric film layer; B3, second electrode layer. DETAILED DESCRIPTION

[0049] To make the purpose, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the scope of protection of the present application.

[0050] The embodiments of the present application provide a new chip and a forming method thereof. A flow channel is formed on the top surface of a main plate, and a top plate is combined to block the top end of the flow channel and serve as a vibrating plate, so as to ensure the smoothness of the surface of the main plate, and ensure the combination quality and the forming quality of each structure. The present application solves the technical problem that the surface of the top plate of the chip is rough in the related art, which has a bad influence on the forming of the piezoelectric structure, and has a bad influence on the combination quality of the top plate and the bottom plate, and affects the forming quality of the chip.

[0051] Reference Figures 1-4 A new chip includes a main plate 1, a top plate 2 and a bottom plate 3. A flow channel a is formed on the top surface of the main plate 1, and a through liquid outlet hole b is formed at the bottom of the end of the flow channel a. The liquid inlet end of the flow channel a is in communication with an external liquid supply device. In the embodiment, an ink cartridge is in communication with the liquid inlet end of the flow channel a to supply functional liquid into the flow channel a. The top plate 2 is attached to the top surface of the main plate 1, and the top plate 2 blocks the upper opening of the flow channel a and serves as a vibrating plate. The top surface of the top plate 2 is formed with a piezoelectric structure 4, and the working end of the piezoelectric structure 4 is arranged directly above the flow channel a.

[0052] In this way, the piezoelectric structure 4 acts on the top plate 2 to make the top plate 2 vibrate to push the functional liquid in the flow channel a out of the liquid outlet hole b. By controlling the piezoelectric structure 4, the ejection control is realized. Since the flow channel a is directly provided on the top surface of the main plate 1, by bonding the top plate 2 on the top surface of the main plate 1 to block the opening of the top of the flow channel a, the top plate 2 is used as a vibrating plate, and the piezoelectric structure 4 is arranged on the top plate 2. Therefore, it is not necessary to add a thin-walled feature by deepening the depth of the flow channel a, and when the flow channel a is processed, the etching depth is shallow, the etching difficulty is low, and the main plate 1 is not easy to burn the main plate 1, so as to ensure the processing quality of the flow channel a.

[0053] Since the main plate 1 is not thinned to reduce the processing difficulty, the main plate 1 is in the factory state, the smoothness of the upper and lower surfaces of the main plate 1 is better, and when the main plate 1 is placed on the processing table to etch the flow channel a and other structures, the placement flatness of the main plate 1 during processing is better, so as to ensure the etching precision.

[0054] The thickness of the top plate 2 is less than the thickness of the main plate 1, so as to ensure that the top plate 2 meets the function as a vibrating plate.

[0055] Referring to Figure 6 In the embodiment, the main plate 1 is a silicon wafer, and the top plate 2 is a top silicon layer A1 part of an SOI silicon wafer A. The SOI silicon wafer A includes a top silicon layer A1, a buried oxygen layer A2 and a bottom silicon layer A3 from top to bottom. The thickness of the top silicon layer A1 is less than that of the bottom silicon layer A3. The top silicon layer A1 is fixed to the top surface of the main plate 1 by silicon-silicon bonding. Then, the bottom silicon layer A3 and the buried oxygen layer A2 are etched in sequence to leave the top silicon layer A1, so as to form the thin top plate 2 on the top of the main plate 1.

[0056] In this way, since the top silicon layer A1, the buried oxygen layer A2 and the bottom silicon layer A3 are arranged in layers, the bottom silicon layer A3 and the buried oxygen layer A2 can be etched in sequence. The materials of different layers are different, so the etching parameters are different. The top silicon layer A1 can be completely reserved, and the smoothness of the surface of the top silicon layer A1 is ensured. When the piezoelectric structure 4 is formed on the surface of the top silicon layer A1, the forming quality of the piezoelectric structure 4 is better.

[0057] Referring to Figure 4 and Figure 6 The bottom plate 3 is bonded to the bottom of the main plate 1, and the ejection hole e is provided on the bottom plate 3. The ejection hole e is in communication with the liquid outlet hole b. The cross-sectional area of the liquid outlet hole b is greater than that of the ejection hole e. The orthographic projection of the ejection hole e on the bottom surface of the main plate 1 falls entirely into the liquid outlet hole b.

[0058] In this way, the liquid outlet hole b collects the functional liquid, ensures the supply of the functional liquid to the ejection hole e, and ensures the consistency of the functional liquid in the ejection hole e for each printing, so as to ensure the printing quality.

[0059] In the embodiment, the flow channel a is provided with multiple flow channels a arranged at intervals. The piezoelectric structure 4 includes multiple acting ends, and the multiple acting ends correspond to the multiple flow channels a respectively. The ejection hole e is provided with multiple ejection holes e, and the multiple ejection holes e are communicated with the multiple liquid outlet holes b respectively.

[0060] In this way, since the liquid outlet hole b is provided at the bottom of the flow channel a and has a deep depth, the liquid outlet hole b is directly etched to be penetrated, so as to ensure the consistency of the depths of the multiple liquid outlet holes b. In addition, the ejection hole e is provided at the bottom plate 3 and has a deep depth, so that the ejection hole e is directly penetrated to make the consistency of the multiple ejection holes e better, and the forming quality of the chip is improved.

[0061] Since the consistency of the multiple liquid outlet holes b is better and the consistency of the depths of the multiple ejection holes e is better, the consistency of the flow resistance values of the functional liquid in the different ejection holes e is better, and when the piezoelectric structure 4 drives the functional liquid to be ejected from the multiple ejection holes e, the functional liquid in part of the flow channel a is less likely to flow back, and the printing consistency and the printing quality are ensured.

[0062] In the embodiment, the material of the bottom plate 3 includes a hydrophobic layer material, and preferably, the material of the bottom plate 3 includes an epoxy resin. The functional liquid is less likely to adhere to the surface of the bottom plate 3, so as to ensure the printing quality.

[0063] Referring to Figure 2 and Figure 6 The bottom surface of the main plate 1 is provided with a liquid inlet groove c, one end of the liquid inlet groove c is communicated with the flow channel a, and the other end of the liquid inlet groove c is communicated with an external liquid supply device. In the embodiment, the liquid inlet groove c is provided with multiple liquid inlet grooves c arranged corresponding to the multiple flow channels a respectively.

[0064] The external ink cartridge sends the functional liquid to the liquid inlet groove c, and when the functional liquid accumulated in the liquid inlet groove c to a certain height, the functional liquid overflows from the liquid inlet groove c and flows into the flow channel a. Therefore, the functional liquid is less likely to generate bubbles when entering the flow channel a, and the functional liquid entering the liquid outlet hole b does not have bubbles, so as to ensure the printing quality.

[0065] Referring to Figure 2 and Figure 3 The flow channel a is provided with a screening structure a1, and the screening structure a1 increases the area of the inner wall of the flow channel a.

[0066] When the functional liquid flows through the screening structure a1, the screening structure a1 divides the flow channel a to convey the functional liquid, so that the functional liquid can contact the screening structure a1 as much as possible when the functional liquid flows through the screening structure a1. The impurities in the functional liquid are easy to adhere to the screening structure a1 after contacting the screening structure a1, thereby playing a filtering role on the impurities. After the functional liquid filtered of impurities is conveyed to the jet hole e, the jet hole e is not easy to be blocked, thereby ensuring normal printing. In addition, during printing, impurities are not printed to the substrate, thereby improving the printing quality.

[0067] With reference to Figure 2 and Figure 3 Specifically, the screening structure a1 includes at least one blocking piece. The blocking piece is fixed in the flow channel a, and the blocking piece divides the inner channel of the flow channel a into multiple paths, and the functional liquid is adapted to flow through the multiple paths. By dividing, the flow path of each flow of the functional liquid is reduced, so that more functional liquid contacts the inner wall of the flow channel a.

[0068] In this embodiment, when the blocking piece is provided with one, the blocking piece is arranged at the middle of the width direction of the flow channel a to divide the flow channel a into two paths. When the blocking piece is provided with multiple, the multiple blocking pieces are arranged at intervals in the width direction of the flow channel a, and the multiple blocking pieces can be provided with multiple rows in the conveying direction of the flow channel a. Each row of blocking pieces is arranged staggered in the conveying direction of the flow channel a to leave a path for the functional liquid to pass through. Thus, the area of contact with the functional liquid is increased.

[0069] In this embodiment, the blocking piece is formed together when the flow channel a is formed. In this embodiment, the flow channel a is processed by etching process. When the flow channel a is processed, the structure of the blocking piece is reserved, so that the flow channel a and the screening structure a1 are formed together.

[0070] In this way, by arranging the blocking piece, the area of contact with the functional liquid is increased, the adhesion rate of the impurities is improved, and the impurities entering the jet hole e are greatly reduced, thereby ensuring the printing quality.

[0071] With reference to Figure 2 and Figure 3 The flow channel a is arranged with a flow limiting structure a2. The screening structure a1 and the flow limiting structure a2 are arranged in sequence in the flow direction of the functional liquid. The flow limiting structure a2 is used to limit the backflow of the functional liquid in the flow channel a. The content of the functional liquid in the flow channel a is maintained to ensure stable ink supply to the jet hole e. And the backflow of the functional liquid is avoided to prevent bubbles from being generated due to the turbulent flow of the functional liquid.

[0072] Specifically, the flow limiting structure a2 includes a flow limiting block. The flow limiting block is arranged at the middle of the flow channel a, and the flow limiting block blocks part of the flow channel a. Thus, the cross-sectional area of the part of the flow channel a arranged with the flow limiting structure a2 is small.

[0073] In this way, by arranging the flow-restricting block in the flow channel a, the communication area of the flow channel a is reduced, and due to the pressure difference, the functional liquid in the flow channel a is more easily sent to the liquid outlet hole b, so as to maintain the stable ink supply to the ejection hole e.

[0074] In addition, under the action of the flow-restricting structure a2, the functional liquid is not prone to backflow, and the flow of the functional liquid is not prone to disorder, so as to avoid the generation of bubbles and protect the printing quality.

[0075] With reference to Figure 2 and Figure 3 In this embodiment, the flow-restricting block is connected to the side wall of the flow channel a, and the flow-restricting block includes a guide inclined surface, and the included angle between the guide inclined surface and the side surface of the flow channel a is arranged as an obtuse angle. In the flow direction of the functional liquid, the flow channel a is provided with a flow-restricting structure a2 part, and the cross-sectional area of the flow-restricting structure a2 part gradually decreases along the flow direction of the functional liquid.

[0076] In this way, since the cross-sectional area of the flow-restricting structure a2 part gradually decreases along the flow direction of the functional liquid, when the functional liquid flows through the flow-restricting structure a2, the functional liquid is not directly blocked, and the functional liquid is not prone to impact and backflow, so as to avoid the generation of bubbles in the functional liquid. The functional liquid flows more stably to the liquid outlet hole b, and the ink supply to the ejection hole e is more stable.

[0077] In this embodiment, when the flow channel a is formed, the flow-restricting block is also formed. In this embodiment, the flow channel a is processed by etching process, and when the flow channel a is processed, the structure of the flow-restricting block is reserved, so that the flow channel a and the flow-restricting structure a2 are formed at the same time.

[0078] With reference to Figure 5 and Figure 6 Each of the action ends of the piezoelectric structure 4 includes a plurality of first electrodes 41, a plurality of piezoelectric films 42 and a plurality of second electrodes 43.

[0079] The plurality of first electrodes 41 are all covered and fixed on the surface of the top plate 2, and the first electrodes 41 are located directly above the flow channel a. The plurality of piezoelectric films 42 are respectively connected to the surfaces of the plurality of first electrodes 41. The plurality of second electrodes 43 are respectively connected to the surfaces of the plurality of piezoelectric films 42.

[0080] In this way, the piezoelectric films 42 are powered through the first electrodes 41 and the second electrodes 43, and different piezoelectric films 42 are controlled by controlling different second electrodes 43. The vibration of the top plate 2 caused by the working of the piezoelectric films 42 can press the functional liquid in the flow channel a, so that the functional liquid is ejected from the ejection hole e.

[0081] The embodiment of the application provides a novel chip, since the flow channel a is directly arranged on the top surface of the main plate 1, the opening at the top of the flow channel a is blocked by bonding the top plate 2 to the top surface of the main plate 1, the top plate 2 is used as a vibrating plate, and the piezoelectric structure 4 is arranged on the top plate 2. Therefore, the thin-wall feature does not need to be formed by additionally deepening the depth of the flow channel a, the etching depth is shallow during the machining of the flow channel a, the etching difficulty is low, and the main plate 1 is not easy to be burnt, so that the machining quality of the flow channel a is ensured.

[0082] Since the main plate 1 is not thinned by reducing the process difficulty, the main plate 1 is in a factory state, the smoothness of the upper and lower surfaces of the main plate 1 is better, and when the main plate 1 is placed on a machining table to etch the flow channel a and other structures, the placement flatness of the main plate 1 during machining is better, so that the etching precision is ensured.

[0083] In addition, since the through liquid outlet holes b are arranged at the bottom of the flow channel a, the depth consistency of the plurality of liquid outlet holes b is better, and the through spray holes e are arranged on the bottom plate 3, the consistency of the plurality of spray holes e is better, the forming quality of the chip is improved, therefore, the flow resistance consistency of the functional liquid in different spray holes e is better, when the piezoelectric structure 4 drives the functional liquid to be sprayed from the plurality of spray holes e, the functional liquid in part of the flow channel a is not easy to flow back, and the printing consistency and the printing quality are ensured.

[0084] Referring to Figure 7 The embodiment of the application further provides a forming method of the novel chip, which is used for forming the novel chip and comprises the following steps S100-S800:

[0085] S100, a silicon wafer is obtained as the main plate 1, and the surface of the main plate 1 is cleaned.

[0086] S200, the flow channel a is etched and formed on the top surface of the main plate 1.

[0087] S300, the through liquid outlet hole b is etched on the bottom surface of the end of the flow channel a.

[0088] S400, an SOI silicon wafer A is obtained, and the top surface of the SOI silicon wafer A is bonded and fixed to the top surface of the main plate 1.

[0089] S500, the bottom silicon layer A3 and the buried oxygen layer A2 of the SOI silicon wafer A are sequentially etched and removed, and the top plate 2 is formed.

[0090] S600, the piezoelectric structure 4 is formed on the top surface of the top plate 2.

[0091] S700, the bottom plate 3 is obtained, and the bottom plate 3 is bonded to the bottom surface of the main plate 1.

[0092] S800, the spray hole e is etched and formed on the bottom plate 3.

[0093] In this way, the flow channel a is formed on the top surface of the main plate 1, and the top plate 2 is formed on the main plate 1 as a vibration plate. Therefore, the thin-walled feature is formed without deepening the depth of the flow channel a, and the etching depth is shallow during the processing of the flow channel a, the etching difficulty is low, and the main plate 1 is not easy to burn, so as to ensure the processing quality of the flow channel a.

[0094] Since the main plate 1 is not thinned to reduce the processing difficulty, the main plate 1 is in the factory state, the smoothness of the upper and lower surfaces of the main plate 1 is good, and the placement flatness of the main plate 1 during the etching of the flow channel a and other structures on the processing table is better, so as to ensure the etching precision.

[0095] In the step S100, a silicon wafer is obtained as the main plate 1, and the surface thereof is cleaned. Specifically, the silicon wafer is provided by a manufacturer, and the surface smoothness of the silicon wafer is good after being factory-produced.

[0096] In this embodiment, the surface of the silicon wafer is cleaned by ultrasonic cleaning and plasma cleaning to ensure the cleanliness of the surface of the silicon wafer.

[0097] The thickness of the silicon plate as the main plate 1 in this embodiment is preferably less than 500 microns.

[0098] In the step S200, the flow channel a is etched on the top surface of the main plate 1.

[0099] Specifically, the flow channel a is formed on the top surface of the main plate 1 by an etching process. In this embodiment, the flow channel a is formed in multiple, and the depth of the flow channel a is preferably less than 100 microns.

[0100] In this way, the flow channel a is formed on the top surface of the main plate 1, and the depth of the flow channel a does not need to be too deep, so as to reduce the etching difficulty and avoid that the flow channel a is etched too deep to damage the main plate 1 itself. The forming difficulty of the flow channel a is reduced, and the forming cost is also reduced.

[0101] Further, the flow channel a is etched on the top surface of the main plate 1, and the step further comprises:

[0102] The stop block and the flow limiting block are etched in the flow channel a.

[0103] In this way, the flow channel a, the stop block and the flow limiting block are formed synchronously to form the screening structure a1 and the flow limiting structure a2 in the flow channel a, so as to save the forming time and steps of the flow channel a and the internal structure thereof.

[0104] In the step S300, the liquid outlet hole b is etched through the bottom surface of the end of the flow channel a.

[0105] Specifically, the liquid outlet hole b is processed through the bottom surface of the flow channel a. Therefore, the depth consistency of the plurality of liquid outlet holes b is conveniently controlled, so as to ensure the printing consistency.

[0106] In some embodiments, before the forming of the flow channel a, a liquid inlet groove c is formed on the bottom surface of the main plate 1. At the same time of etching the liquid outlet hole b through the bottom surface of the end of the flow channel a, a communication hole d is etched in the flow channel a, which is in communication with the liquid inlet groove c.

[0107] Specifically, before the processing of the flow channel a, a plurality of liquid inlet grooves c are formed on the bottom surface of the main plate 1, and the depth of the liquid inlet groove c is less than 100 microns. One end of the liquid inlet groove c extends to the side of the main plate 1 and is arranged as an opening to communicate with the external ink cartridge. The length of the liquid inlet groove c is less than the length of the flow channel a. The plurality of liquid inlet grooves c correspond to the plurality of flow channels a one by one. The end of the liquid inlet groove c and the liquid inlet end of the flow channel a have an overlapping projection in the vertical direction.

[0108] In addition, when the liquid outlet hole b is processed, a communication hole d is etched through the bottom surface of the liquid inlet end of the flow channel a, and the communication hole d communicates the liquid inlet groove c and the flow channel a.

[0109] In this way, the liquid inlet groove c is processed before the processing of the flow channel a. Since the proportion of the area of the liquid inlet groove c on the main plate 1 is small, after the processing of the liquid inlet groove c, the bottom surface of the main plate 1 is still relatively complete and has a guaranteed smoothness. When the flow channel a is subsequently processed, the bottom surface of the main plate 1 contacts the processing table, which ensures that the main plate 1 is stable and placed flat, thereby ensuring the precision of etching and processing the flow channel a and the forming quality of the flow channel a.

[0110] In addition, the communication hole d is etched at the same time of the processing of the liquid outlet hole b. Since the opening surfaces of the communication hole d and the liquid outlet hole are both the bottom surface of the flow channel a, the communication hole d and the liquid outlet hole b can be simultaneously formed, thereby saving the processing steps.

[0111] By processing the liquid inlet groove c and the communication hole d, the external ink cartridge sends the functional liquid to the liquid inlet groove c. After the functional liquid accumulated in the liquid inlet groove c to a certain height, the functional liquid overflows from the liquid inlet groove c and flows into the flow channel a. Therefore, the functional liquid entering the flow channel a is not easy to produce bubbles, which ensures that the functional liquid entering the liquid outlet hole b does not have bubbles, thereby ensuring the printing quality.

[0112] In other embodiments, the liquid inlet groove c and the communication hole d can not be processed. In this case, the liquid inlet end of the flow channel a extends to the side of the main plate 1 and is arranged as an opening, and the flow channel a is directly supplied with the functional liquid by the external ink cartridge.

[0113] In the step S400, the SOI silicon wafer A is obtained, and the top surface of the SOI silicon wafer A is bonded and fixed to the top surface of the main plate 1.

[0114] Specifically, the SOI silicon wafer A includes a top silicon layer A1, a buried oxygen layer A2, and a bottom silicon layer A3, and the thickness of the top silicon layer A1 is less than that of the bottom silicon layer A3. Specifically, the thickness of the top silicon layer A1 meets the thickness requirement of the vibration plate.

[0115] The SOI silicon wafer A is fixed to the main plate 1 by bonding the top silicon layer A1 to the top surface of the main plate 1. In this embodiment, the top silicon layer A1 and the main plate 1 are fixed by silicon-silicon bonding.

[0116] In this arrangement, the upper opening of the flow channel a is shielded by the SOI silicon wafer A. In addition, since the top surface of the main plate 1 is relatively flat, and the surface of the SOI silicon wafer A is also relatively flat, the bonding quality between the SOI silicon wafer A and the main plate 1 is better.

[0117] In step S500 , the bottom silicon layer A3 and the buried oxide layer A2 of the SOI silicon wafer A are sequentially etched away to form a top plate 2 .

[0118] Specifically, the bottom silicon layer A3 is first etched away, and then the buried oxide layer A2 is etched away. Since the bottom silicon layer A3 is composed of silicon and the buried oxide layer A2 is composed of silicon dioxide, the etching selectivity of the bottom silicon layer A3 and the buried oxide layer A2 is different.

[0119] Therefore, when etching away the bottom silicon layer A3, the buried oxide layer A2 is not damaged, thereby ensuring the surface flatness and smoothness of the buried oxide layer A2. When etching away the buried oxide layer A2, the top silicon layer A1 is not damaged, thereby ensuring the surface flatness and smoothness of the top silicon layer A1. This not only allows a thinner top plate 2 to be formed on the top surface of the main plate 1 to function as a vibration plate, but also ensures that the surface flatness and smoothness of the top plate 2 are improved, thereby ensuring the precision and quality of the subsequent molding of the piezoelectric structure 4 on the surface of the top plate 2.

[0120] The step S600 is to form a piezoelectric structure 4 on the top surface of the top plate 2, which specifically includes steps S610-S640.

[0121] S610, growing a first electrode layer B1 on the top surface of the top plate 2;

[0122] S620, growing a piezoelectric film layer B2 on the first electrode layer;

[0123] S630, growing a second electrode layer B3 on the piezoelectric film layer;

[0124] S640 , etching the first electrode layer B1 , the piezoelectric film layer B2 , and the second electrode layer B3 on the top plate 2 to form a first electrode 41 , a piezoelectric film 42 , and a second electrode 43 .

[0125] In this arrangement, the first electrode layer B1, the piezoelectric film layer B2 and the second electrode layer B3 are sequentially grown on the surface of the top plate 2, and finally the first electrode layer B1, the piezoelectric film layer B2 and the second electrode layer B3 are etched to form the piezoelectric structure 4.

[0126] Specifically, the first electrode layer B1 and the second electrode layer B3 are formed in the form of magnetron sputtering or electron beam evaporation; and the piezoelectric film layer B2 is formed by sol-gel method.

[0127] In step S700, the bottom plate 3 is obtained and attached to the bottom surface of the main plate 1.

[0128] Specifically, the material of the bottom plate 3 includes a hydrophobic layer material, and in this embodiment, the material of the bottom plate 3 includes epoxy resin. The bottom plate 3 is attached to the bottom surface of the main plate 1 by industrial glue.

[0129] In step S800, the ejection holes e are etched and formed on the bottom plate 3.

[0130] Specifically, the ejection holes e are opened on the bottom surface of the bottom plate 3, so that the ejection holes e are in communication with the liquid outlet holes b. The cross-sectional area of the ejection holes e is smaller than that of the liquid outlet holes b. Since the ejection holes e are arranged through the bottom plate 3, the depth consistency of the plurality of ejection holes e is better.

[0131] In this way, the liquid outlet holes b collect the functional liquid, ensuring the supply of the functional liquid to the ejection holes e and the consistency of the functional liquid in the ejection holes e for each printing, thereby ensuring the printing quality.

[0132] Since the through liquid outlet holes b are opened at the bottom of the flow channel a, and the depth of the liquid outlet holes b is relatively deep, the liquid outlet holes b are directly etched to be through, thereby ensuring the depth consistency of the plurality of liquid outlet holes b. In addition, the through ejection holes e are opened on the bottom plate 3, and the depth of the ejection holes e is relatively deep, so that the ejection holes e are directly made to be through, thereby improving the consistency of the plurality of ejection holes e and the forming quality of the chip.

[0133] Since the consistency of the plurality of liquid outlet holes b and the depth consistency of the plurality of ejection holes e are better, the flow resistance consistency of the functional liquid in the different ejection holes e is better, and the functional liquid driven by the piezoelectric structure 4 to be sprayed from the plurality of ejection holes e is not prone to backflow in the functional liquid in the partial flow channel a, thereby ensuring the printing consistency and the printing quality.

[0134] In this embodiment, since the material of the bottom plate 3 includes a hydrophobic layer material, the functional liquid is not prone to adhere to the surface of the bottom plate 3 after being sprayed from the bottom plate 3, thereby ensuring the printing quality.

[0135] Another embodiment of the present application provides a new chip forming method. Since the forming method is used to form the new chip as described above, the beneficial effects of the forming method are consistent with those of the new chip, which will not be repeated here.

[0136] In the description of the present application, it should be noted that the terms "upper", "lower", and the like are used for indicating the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application. Unless otherwise explicitly specified and limited, the terms "mounting", "connection", "connecting" should be interpreted broadly, for example, can be fixed connection, can also be detachable connection, or integrally connected; can be mechanical connection, can also be electrical connection; can be directly connected, can also be indirectly connected through an intermediate medium, can be the internal communication of two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0137] It should be noted that in the present application, relational terms such as "first" and "second", and the like are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply that there is any such actual relationship or order between these entities or operations. Moreover, the terms "comprising", "including" or any other variant thereof are intended to cover non-exclusive inclusion, so that a process, method, article or apparatus including a series of elements includes not only those elements, but also other elements not explicitly listed, or other elements inherent in such a process, method, article or apparatus. Without more limitations, the element defined by the statement "comprising a" does not exclude the presence of other identical elements in the process, method, article or apparatus including the element.

[0138] The above is only a specific embodiment of the present application, which enables those skilled in the art to understand or implement the present application. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application will not be limited to these embodiments shown herein, but will conform to the widest scope consistent with the principles and novel features applied herein.

Claims

1. A new chip, characterized in that: It includes: A main body plate, wherein a flow channel is provided on the top surface of the main body plate, a liquid outlet hole is provided at the bottom of the end of the flow channel, and the liquid inlet end of the flow channel is connected to an external liquid supply device; A top plate, wherein a piezoelectric structure is formed on the top surface of the top plate, the top plate is attached to the top surface of the main plate, the top plate blocks the top opening of the flow channel, and the active end of the piezoelectric structure is arranged directly above the flow channel; A bottom plate, wherein a spray hole is provided on the bottom plate, the bottom plate is attached to the bottom surface of the main body plate, and the spray hole is connected to the liquid outlet hole, the cross-sectional area of ​​the liquid outlet hole is larger than the cross-sectional area of ​​the spray hole, and the orthographic projection of the spray hole on the bottom surface of the main body plate falls entirely into the liquid outlet hole.

2. The novel chip according to claim 1, characterized in that: There are multiple flow channels, which are arranged at intervals; the piezoelectric structure includes multiple active ends, which are respectively arranged corresponding to the multiple flow channels; there are multiple injection holes, which are respectively connected to the multiple liquid outlet holes.

3. The novel chip according to claim 1, characterized in that: A liquid inlet groove is provided on the bottom surface of the main body plate, one end of the liquid inlet groove is communicated with the flow channel, and the other end of the liquid inlet groove is communicated with the external liquid supply device.

4. The novel chip according to claim 1, characterized in that: A screening structure is provided in the flow channel, which increases the area of ​​the inner wall of the flow channel; the screening structure includes at least one block, which is fixed in the flow channel and divides the inner channel of the flow channel into multiple paths, and the functional fluid is suitable for flowing through the multiple paths.

5. The novel chip according to claim 4, characterized in that: A flow limiting structure is arranged in the flow channel. In the flow direction of the functional fluid, the screening structure and the flow limiting structure are arranged in sequence. The flow limiting structure is used to limit the backflow of the functional fluid in the flow channel. The flow limiting structure includes a flow limiting block, which is arranged in the middle of the flow channel and blocks part of the flow channel. Wherein, the cross-sectional area of ​​the flow channel provided with the flow-limiting structure portion gradually decreases along the flow direction of the functional fluid.

6. A new chip forming method, characterized in that: The method for forming the novel chip according to any one of claims 1 to 5 comprises the following steps: Obtaining a silicon wafer as a main plate and cleaning its surface; Etching a forming flow channel on the top surface of the main body plate; Etching a liquid outlet hole through the bottom surface of the end of the flow channel; Obtaining an SOI silicon wafer, and bonding and fixing the top surface of the SOI silicon wafer to the top surface of the main plate; The bottom silicon layer and buried oxide layer of the SOI silicon wafer are sequentially etched away to form a top plate; forming a piezoelectric structure on the top surface of the top plate; Obtain the base plate and attach it to the bottom surface of the main plate; The injection holes are etched on the bottom plate.

7. The method for forming a novel chip according to claim 6, characterized in that: While etching the flow channel on the top surface of the main plate, the process also includes: A stopper and a flow limiter are etched in the flow channel.

8. The method for forming a novel chip according to claim 6, characterized in that: Before etching the flow channel on the top surface of the main body plate, a liquid inlet groove is also provided on the bottom surface of the main body plate; while etching a liquid outlet hole through the bottom surface at the end of the flow channel, a connecting hole connected to the liquid inlet groove is also etched in the flow channel.

9. The method for forming a novel chip according to claim 6, characterized in that: The piezoelectric structure is formed on the top surface of the top plate, including: growing a first electrode layer on the top surface of the top plate; growing a piezoelectric thin film layer on the first electrode layer; growing a second electrode layer on the piezoelectric film layer; The first electrode layer, the piezoelectric film layer and the second electrode layer are etched on the top plate to form the first electrode, the piezoelectric film and the second electrode.

10. The method for forming a novel chip according to claim 6, characterized in that: The material of the bottom plate includes hydrophobic material.

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