Uniform flow assembly and vertical furnace

Abstract

The application provides a uniform flow assembly and a vertical furnace, and relates to the technical field of semiconductor processing. The uniform flow assembly comprises an air inlet structure and an air outlet structure. The air inlet structure comprises an air inlet flow channel and a plurality of air inlet parts connected to the air inlet flow channel. The plurality of air inlet parts are arranged at intervals along a first direction. The air outlet structure comprises an air outlet flow channel and a plurality of air outlet parts connected to the air outlet flow channel. The plurality of air outlet parts are arranged at intervals along the first direction. The plurality of air inlet parts and the plurality of air outlet parts are arranged on opposite sides of a wafer boat and face each other. Each air inlet part corresponds to one air outlet part to form an air flow area therebetween. The plurality of air flow areas can respectively flow through the interval space between two adjacent wafers in the wafer boat, and the flow area of the air flow area completely covers the area where the interval space is located. The uniform flow structure can form a complete and uniform thickness film on the wafer surface, thereby improving the completeness and uniformity of film formation on the wafer surface and ensuring the quality and yield of products.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor processing, and in particular to a flow uniformization assembly and a vertical furnace. BACKGROUND

[0002] In the manufacturing process of semiconductor devices, many heat treatment processes are involved. As a commonly used semiconductor heat treatment process, low pressure chemical vapor deposition (LPCVD) is widely used for the deposition of silicon oxide, nitride, polysilicon and other film layers. LPCVD generally uses a vertical furnace as a thermal reaction device. A vertical boat is generally used as a carrying tool in the vertical furnace for carrying multiple wafers for simultaneous heat treatment. The uniformity of the airflow field in which each wafer is located directly determines the film formation quality on the wafer surface.

[0003] In related technologies, because the wafers in the boat are arranged vertically and spaced apart, the uniformity of the airflow field formed by the gas delivery structure delivering reaction gas to each wafer cannot be guaranteed, resulting in uneven film formation on the wafer surface, which affects the quality and yield of the product. SUMMARY

[0004] The present application aims to provide a flow uniformization assembly and a vertical furnace to solve the technical problem that in related technologies, the uniformity of the airflow field formed by the gas delivery structure delivering reaction gas to each wafer cannot be guaranteed, resulting in uneven film formation on the wafer surface, which affects the quality and yield of the product.

[0005] To solve the above problems, the present application provides a flow uniformization assembly, comprising:

[0006] an inlet structure having an inlet flow channel and a plurality of inlet portions connected to the inlet flow channel, the plurality of inlet portions being arranged along a first direction; and

[0007] an exhaust structure having an exhaust flow channel and a plurality of exhaust portions connected to the exhaust flow channel, the plurality of exhaust portions being arranged along the first direction;

[0008] wherein the plurality of inlet portions and the plurality of exhaust portions are configured to be arranged on opposite sides of the boat and facing each other, each inlet portion corresponding to one exhaust portion to form an airflow zone therebetween, the plurality of airflow zones being able to flow through the spacing between two adjacent wafers in the boat, and the flow area of the airflow zone completely covering the area where the spacing is located.

[0009] Optionally, the extension direction of the airflow zone is parallel to the radial cross-section of the wafer.

[0010] Optionally, the air inlet structure and / or the air outlet structure is / are a target air conveying structure, the air inlet channel or the air outlet channel of the target air conveying structure is / are a target air conveying channel, and the air inlet part or the air outlet part of the target air conveying structure is / are a target air conveying part.

[0011] In the target air conveying structure, the target air conveying channel includes a main channel extending in a first direction and a plurality of branch channels extending in a second direction, the plurality of branch channels are all communicated with the main channel and are arranged at intervals along the extension direction of the main channel, and the plurality of target air conveying parts are respectively communicated with one of the branch channels.

[0012] Optionally, the target air conveying part is divided into a plurality of air conveying areas along the extension direction of the corresponding branch channel, and the air conveying areas gradually increase in area in a direction away from the main channel.

[0013] Optionally, the target air conveying part is arranged symmetrically with respect to the main channel.

[0014] Optionally, the branch channel is an arc-shaped channel coaxial with the crystal boat.

[0015] Optionally, the air conveying areas of the plurality of target air conveying parts gradually increase in area in a direction away from the interface end of the main channel.

[0016] Optionally, the air inlet structure is the target air conveying structure, the air inlet part includes a plurality of air inlet openings, the plurality of air inlet openings are arranged at intervals along the extension direction of the corresponding branch channel, and the diameters of the air inlet openings gradually increase in a direction away from the main channel.

[0017] Optionally, the extension directions of the plurality of air inlet openings of the same air inlet part are arranged in parallel.

[0018] Optionally, along the extension direction of the branch channel, the communication positions of the main channel and the branch channel are staggered with respect to the corresponding air inlet opening.

[0019] Optionally, the air outlet structure is the target air conveying structure, the air outlet part includes a strip-shaped air outlet opening, and the extension direction of the air outlet opening is consistent with the extension direction of the corresponding branch channel.

[0020] Optionally, the target air conveying structure includes a main pipe extending in a first direction and a plurality of branch pipes communicated with the main pipe, the main channel is formed in the main pipe, and the branch channel is formed in the branch pipe.

[0021] Optionally, the air inlet structure and the air outlet structure are both the target air conveying structure, the branch pipe is a semi-annular pipe, and the plurality of branch pipes of the two target air conveying structures are connected one by one to form an annular body.

[0022] Optionally, the ring inner diameter of the ring-shaped body is 5-10 mm larger than the outer diameter of the boat.

[0023] Optionally, the thickness of the branch pipe is 1-2 mm less than the thickness of the corresponding spacing space.

[0024] Optionally, in the air inlet structure, the air inlet channel and the air inlet part form at least two groups of flow channel structures, and each group of the flow channel structures is arranged in a staggered manner along a first direction.

[0025] The application further provides a vertical furnace, comprising:

[0026] a furnace body,

[0027] a furnace pipe arranged in the furnace body;

[0028] a boat arranged in the furnace pipe and capable of carrying a plurality of wafers arranged in a vertical direction in a spaced manner; and

[0029] the above-mentioned flow uniformizing assembly is arranged in the furnace pipe, and the air inlet structure and the air outlet structure of the flow uniformizing assembly are located on opposite sides of the boat, a plurality of the air inlet parts of the air inlet structure are arranged opposite a plurality of the air outlet parts of the air outlet structure, each of the air inlet parts corresponds to one of the air outlet parts to form an air flow area therebetween, a plurality of the air flow areas respectively flow through spacing spaces between two adjacent wafers in the boat, and the flow area of the air flow area completely covers the area where the spacing space is located.

[0030] Optionally, the air inlet structure and the air outlet structure are fixedly arranged in the furnace pipe, and a rotating gap exists between the air inlet structure, the air outlet structure and the boat.

[0031] Optionally, a peripheral space is formed between the flow uniformizing assembly and the furnace pipe, the furnace body is provided with an outer ring air inlet port corresponding to the area of the air inlet structure, the outer ring air inlet port is configured to supply a filling gas to the peripheral space, and the furnace body is provided with an outer ring air outlet port corresponding to the area of the air outlet structure, the outer ring air outlet port is configured to discharge the gas in the peripheral space.

[0032] Optionally, the flow uniformizing assembly forms a reaction space, and the gas pressure in the reaction space is not less than the gas pressure in the peripheral space.

[0033] Optionally, the outer ring air inlet pipe is connected with an outer ring air inlet tube, the outer ring air inlet tube extends upward in the peripheral space and is located on the side of the air inlet structure away from the boat.

[0034] Optionally, the outer ring air inlet tube extends in a vertical direction, the top end of the outer ring air inlet tube is not lower than the air inlet structure and the boat, and the outer ring air outlet port is located in a lower area of the furnace body.

[0035] Optionally, along the circumference of the peripheral space, the outer ring gas supply pipe corresponds to the middle position of the gas inlet structure, and the outer ring gas outlet corresponds to the middle position of the gas outlet structure.

[0036] Optionally, the outer ring gas outlet is connected to an exhaust pump through a first pipeline, and the first pipeline is provided with a first regulating valve; the interface end of the gas flow channel of the gas outlet structure is connected to the exhaust pump through a second pipeline, and the second pipeline is provided with a second regulating valve.

[0037] When the uniform flow assembly provided by the application is applied to a vertical furnace, each bearing position of the wafer boat bears a wafer, and a plurality of wafers are arranged in a vertical stack with intervals, and there is an interval space between any two adjacent wafers. Each gas inlet portion and each gas outlet portion are respectively located at the first side and the second side opposite to the first side along the horizontal direction of one interval space; the reaction gas flows through the gas inlet flow channel to each gas inlet portion and is blown out from the first side of each gas inlet portion to the corresponding interval space; the gas outlet flow channel generates a suction effect on each gas outlet portion, thereby generating a suction effect on the reaction gas blown into the interval space at the second side of the corresponding interval space. The blowing direction of the gas inlet portion and the suction direction of the gas outlet portion are consistent, so that the reaction gas can stably flow from the gas inlet portion to the gas outlet portion under the joint action of the blowing effect of the gas inlet portion and the suction effect of the gas outlet portion, thereby forming a stable and uniform gas flow field between the gas inlet portion and the gas outlet portion. At the same time, the flow region of the gas flow field is consistent with the extension region of the gas flow area, and the extension width of the gas flow field is not less than the diameter of the wafer. The projection profile of the wafer along the axial direction towards the gas flow area is completely located within the gas flow area and the flow region of the gas flow field. Correspondingly, the reaction gas in the gas flow field can form a complete and uniform thin film on the wafer surface, thereby improving the completeness and uniformity of film formation on the wafer surface and ensuring the quality and yield of the product. BRIEF DESCRIPTION OF DRAWINGS

[0038] In order to more clearly illustrate the technical solutions in the specific embodiments or related art, the following will briefly introduce the drawings needed to be used in the specific embodiments or related art description. Obviously, the drawings in the following description are some embodiments of the present application, and those skilled in the art can also obtain other drawings according to these drawings without creating any inventive labor.

[0039] Figure 1 FIG. 1 is a vertical sectional view of a vertical furnace in the related art;

[0040] Figure 2 FIG. 2 is a schematic view of the relative positions of the gas inlet structure and the wafer in the vertical furnace in the related art; Figure 1

[0041] Figure 3 FIG. 3 is a vertical sectional view of a vertical furnace provided by an embodiment of the present application; ​

[0042] Figure 4 A schematic diagram of relative positions of a gas inlet structure in a vertical furnace and a wafer boat in a vertical direction according to an embodiment of the present application;

[0043] Figure 5 A schematic diagram of a gas inlet structure in a uniform flow assembly according to an embodiment of the present application;

[0044] Figure 6 A schematic diagram of relative positions of a gas inlet structure in a vertical furnace and a wafer boat in a vertical direction according to an embodiment of the present application; Figure 5 A schematic diagram of a gas inlet structure in a vertical furnace according to an embodiment of the present application;

[0045] Figure 7 A schematic diagram of relative positions of a gas inlet structure in a vertical furnace and a wafer boat in a vertical direction according to an embodiment of the present application;

[0046] Figure 8 A schematic diagram of a gas outlet structure in a uniform flow assembly according to an embodiment of the present application;

[0047] Figure 9 A schematic diagram of relative positions of a gas inlet structure in a vertical furnace and a wafer boat in a vertical direction according to an embodiment of the present application; Figure 8 A schematic diagram of a gas outlet structure in a vertical furnace according to an embodiment of the present application;

[0048] Figure 10 A schematic diagram of relative positions of a gas inlet structure in a vertical furnace and a wafer boat in a vertical direction according to an embodiment of the present application.

[0049] BRIEF DESCRIPTION OF THE DRAWINGS

[0050] 10 - furnace body; 11 - annular side wall; 12 - heat insulation layer; 13 - base; 13a - bottom plate; 13b - bottom wall; 13c - step; 14 - heat insulation barrel; 15 - gas passing gap; 16 - outer ring gas inlet; 17 - outer ring gas outlet; 20 - furnace tube; 30 - wafer boat; 40 - wafer; 40A - spacing space; 50 - uniform flow assembly; 50A - gas flow area; 50B - annular body; 50C - rotating gap; 50D - reaction space; 50E - peripheral space; 51 - top space; 52 - outer ring space; 61 - first pipeline; 62 - first regulating valve; 63 - first vacuum gauge; 64 - second pipeline; 65 - second regulating valve; 66 - second vacuum gauge; 70 - exhaust pump; 81 - exhaust pipeline; 82 - outer ring gas inlet pipe; 83 - outer ring gas outlet pipe;

[0051] 100 - gas inlet structure; 110 - main gas inlet pipe; 111 - main gas inlet channel; 120 - branch gas inlet pipe; 121 - branch gas inlet channel; 13A - gas inlet flow channel; 140 - gas inlet part; 141 - gas inlet; 200 - gas outlet structure; 210 - main gas outlet pipe; 211 - main gas outlet channel; 220 - branch gas outlet pipe; 221 - branch gas outlet channel; 23A - gas outlet flow channel; 240 - gas outlet part; 241 - gas outlet; 310 - main pipe; 311 - main flow channel; 320 - branch pipe; 321 - branch flow channel. DETAILED DESCRIPTION

[0052] The technical solutions of the present application will be described clearly and completely in combination with the drawings. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0053] In the description of the present application, it should be noted that the orientations or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application. In addition, the terms "first", "second", "third" are only for descriptive purposes and cannot be understood as indicating or implying relative importance.

[0054] In the description of the present application, it should be noted that unless otherwise explicitly specified and limited, the terms "mounting", "connecting", "connection" should be understood broadly, for example, it can be fixed connection, or detachable connection, or integrally connected; it can be mechanical connection, or electrical connection; it can be directly connected, or indirectly connected through an intermediate medium, or the internal communication of two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0055] In the related art of heat treatment using a vertical furnace, as shown in Figure 1 The two gas inlet structures 100 are arranged on opposite sides of the crystal boat 30 in the furnace tube 20 of the vertical furnace. The gas inlet structure 100 specifically includes a vertically extending main gas inlet pipe 110 and a plurality of arc-shaped branch gas inlet pipes 120 communicated with the main gas inlet pipe 110 and arranged vertically and spaced apart. The branch gas inlet pipe 120 is provided with a plurality of dispersedly arranged gas inlets 141 on the side facing the crystal boat 30. The bottom region of the vertical furnace is provided with an exhaust pipe 81. In use, the crystal boat 30 carries a plurality of horizontally arranged and vertically spaced apart wafers 40. The gas inlet structures 100 on both sides simultaneously blow reaction gas towards the reaction region of the wafers 40. The remaining gas after reaction and the particles entrained therein are then discharged downward along the outer ring space 52 between the side wall of the furnace tube 20 and the gas inlet structure 100 under the suction action of the exhaust pipe 81.

[0056] In the related art, as shown in Figure 2As shown, the two opposite gas inlet structures 100 blow the reaction gas towards each other, and the two gas flows flow in the directions shown by the arrows and converge at the central region of the wafer 40, so that the reaction gas concentration in the convergence region is large, the gas concentration in the remaining region, especially the gap region between the two gas inlet structures 100, is small, and the two gas flows collide with each other, resulting in poor flow stability and uniformity of the formed gas flow field, which causes poor uniformity of the film formed on the surface of the wafer 40, and affects the quality and yield of the product.

[0057] The embodiment of the present application provides a flow uniformization assembly 50 applied to a vertical furnace, and the reaction gas flow blown by the flow uniformization assembly 50 can form a uniform and stable gas flow field in the spacing space 40A between each adjacent wafer 40, thereby forming a film with uniform thickness on the surface of each wafer 40, improving the uniformity of the film thickness on the surface of the wafer 40, and improving the product yield. For the convenience of understanding, the technical solutions disclosed in each embodiment of the present application will be described in detail below with reference to the accompanying drawings.

[0058] The embodiment of the present application provides a flow uniformization assembly 50, as shown by Figures 3-10 The flow uniformization assembly 50 includes a gas inlet structure 100 and a gas outlet structure 200, wherein the gas inlet structure 100 has a gas inlet flow channel 13A and a plurality of gas inlet portions 140 communicated with the gas inlet flow channel 13A, and the plurality of gas inlet portions 140 are arranged at intervals along a first direction; the gas outlet structure 200 has a gas outlet flow channel 23A and a plurality of gas outlet portions 240 communicated with the gas outlet flow channel 23A, and the plurality of gas outlet portions 240 are arranged at intervals along the first direction; the plurality of gas inlet portions 140 and the plurality of gas outlet portions 240 are configured to be arranged on opposite sides of the wafer boat 30 and arranged towards each other, each gas inlet portion 140 corresponds to one gas outlet portion 240 to form a gas flow area 50A therebetween, the plurality of gas flow areas 50A can respectively flow through the spacing space 40A between two adjacent wafers 40 in the wafer boat 30, and the flow area of the gas flow area 50A completely covers the region where the spacing space 40A is located.

[0059] The embodiment of the present application also provides a vertical furnace, as shown by Figure 3 and Figure 10As shown, the vertical furnace includes a furnace body 10, a furnace tube 20, a wafer boat 30, and the uniform flow assembly 50 described above, wherein the furnace tube 20 is arranged in the furnace body 10; the wafer boat 30 is arranged in the furnace tube 20 and can carry a plurality of vertically spaced wafers 40; the uniform flow assembly 50 is arranged in the furnace tube 20, and the air inlet structure 100 and the air outlet structure 200 of the uniform flow assembly 50 are located on opposite sides of the wafer boat 30, a plurality of air inlet portions 140 of the air inlet structure 100 are arranged opposite a plurality of air outlet portions 240 of the air outlet structure 200, each air inlet portion 140 corresponds to one air outlet portion 240 to form an air flow area 50A therebetween, a plurality of air flow areas 50A respectively flow through the spacing space 40A between two adjacent wafers 40 in the wafer boat 30, and the flow area of the air flow area 50A completely covers the area where the spacing space 40A is located.

[0060] When the uniform flow assembly 50 provided by the embodiment of the present application is applied to a vertical furnace, the wafer boat 30 extends vertically, the first direction Z is consistent with the axial direction of the wafer boat 30, the wafer boat 30 has a plurality of vertically spaced carrying positions, the air inlet structure 100 and the air outlet structure 200 are arranged on opposite sides of the wafer boat 30 in the radial direction, and a plurality of air inlet portions 140 of the air inlet structure 100 are vertically spaced, a plurality of air outlet portions 240 of the air outlet structure 200 are vertically spaced, the plurality of air inlet portions 140 and the plurality of air outlet portions 240 are vertically one-to-one corresponding, and the corresponding air inlet portion 140 and air outlet portion 240 are opposite to each other, and the area between them serves as an air flow area 50A.

[0061] In use, each carrier position carries a wafer 40, and a plurality of wafers 40 are vertically stacked and spaced apart, and any two adjacent wafers 40 have a spacing space 40A therebetween, and each gas inlet portion 140 and each gas outlet portion 240 are located at a first side and a second side, respectively, of one of the spacing spaces 40A opposite to each other in the horizontal direction; the reaction gas flows through the gas inlet channel 13A to the gas inlet portions 140, and is blown out from the gas inlet portions 140 to the corresponding spacing space 40A at the first side; the gas outlet channel 23A generates a suction effect on the gas outlet portions 240, thereby generating a suction effect on the reaction gas blown into the spacing space 40A at the second side of the corresponding spacing space 40A; the blowing direction of the gas inlet portions 140 and the suction direction of the gas outlet portions 240 are consistent, so that the reaction gas can stably flow from the gas inlet portions 140 to the gas outlet portions 240 under the combined action of the blowing action of the gas inlet portions 140 and the suction action of the gas outlet portions 240, thereby forming a stable and uniform gas flow field between the gas inlet portions 140 and the gas outlet portions 240; at the same time, the flow region of the gas flow field is consistent with the extension region of the gas flow area 50A, and the extension width of the gas flow field is not less than the diameter of the wafer 40, and the projection profile of the wafer 40 along the axial direction towards the gas flow area 50A is completely located in the gas flow area 50A and the flow region of the gas flow field, and accordingly, the reaction gas in the gas flow field can form a complete and uniform thickness film on the surface of the wafer 40, thereby improving the completeness and uniformity of film formation on the surface of the wafer 40, and ensuring the quality and yield of the product.

[0062] In the embodiment of the present application, as shown in Figure 10 The extension direction of the gas flow area 50A is parallel to the radial cross section of the wafer 40. The flow direction of the reaction gas flowing through the gas flow area 50A is the extension direction of the gas flow area 50A, and the reaction gas flow flows through the spacing space 40A in a direction parallel to the radial cross section of the wafer 40, without direct blowing collision with the wafer 40, and the spacing between the wafer 40 and the reaction gas flow is more uniform, thereby further improving the uniformity of the gas flow field formed by the uniform flow assembly 50 between the wafers 40, and accordingly further improving the film formation uniformity on the surface of the wafer 40. Specifically, when the uniform flow assembly 50 is applied to a vertical furnace, the height of the gas inlet portion 140 and the corresponding gas outlet portion 240 in the vertical direction is approximately the same, so as to form a gas flow area 50A extending approximately in the horizontal direction therebetween.

[0063] In the embodiment of the present application, at least one of the gas inlet structure 100 and the gas outlet structure 200 is taken as a target gas conveying structure, the gas inlet channel 13A or the gas outlet channel 23A of the target gas conveying structure is taken as a target gas conveying channel, and the gas inlet part 140 or the gas outlet part 240 of the target gas conveying structure is taken as a target gas conveying part; in the target gas conveying structure, the target gas conveying channel includes a main channel 311 extending along a first direction and a plurality of branch channels 321 extending along a second direction, the plurality of branch channels 321 are all communicated with the main channel 311 and are arranged along the extension direction of the main channel 311 at intervals, and the plurality of target gas conveying parts are respectively communicated with one of the branch channels 321. One of the gas inlet structure 100 and the gas outlet structure 200 is taken as the target gas conveying structure in a corresponding form, or both of the gas inlet structure 100 and the gas outlet structure 200 are taken as the target gas conveying structure in a corresponding form; in the target gas conveying structure, the extension direction of the main channel 311 is consistent with the axial direction of the wafer boat 30, and the extension direction of the branch channel 321 is parallel to the radial cross section of the wafer 40; when the embodiment is applied to a vertical furnace, the first direction Z is consistent with the vertical direction, and the second direction Y is parallel to the horizontal plane.

[0064] When the gas inlet structure 100 is taken as the target gas conveying structure, the main channel 311 is the main gas inlet channel 111, and the branch channel 321 is the branch gas inlet channel 121; in the process, the reaction gas first flows to each branch gas inlet channel 121 through the main gas inlet channel 111, and then is blown out to the corresponding interval space 40A through the gas inlet part 140, so that the gas supply to the plurality of gas inlet parts 140 can be realized by using a single reaction gas source, and the structure is simpler and the cost is lower.

[0065] As shown in Figure 4 , Figure 5 and Figure 10 , when the gas outlet structure 200 is taken as the target gas conveying structure, the main channel 311 is the main gas outlet channel 211, and the branch channel 321 is the branch gas outlet channel 221; in the process, the main gas outlet channel 211 simultaneously generates a suction effect on the plurality of branch gas outlet channels 221 and the gas outlet parts 240 thereon, so that the gas flow in the corresponding interval space 40A is sucked, and the gas discharge to the plurality of gas outlet parts 240 can be realized by using a single gas pump 70, and the structure is simpler and the cost is lower.

[0066] Specifically, in the embodiment of the present application, as shown in Figure 4 , Figure 5 , Figure 7 , Figure 8 and Figure 10As shown, the target gas delivery structure includes a main pipe 310 extending along a first direction and a plurality of branch pipes 320 connected to the main pipe 310, a main flow channel 311 is formed in the main pipe 310, and a branch flow channel 321 is formed in the branch pipe 320. The main pipe 310 is a vertical straight pipe, the top end of which is closed or connected to the branch pipe 320, and the bottom end of which extends to the sidewall of the furnace body 10 near the bottom region or penetrates through the sidewall to the outside of the furnace body 10 to serve as an interface end for connecting a reaction gas source; both ends of each branch pipe 320 are closed, and the branch pipe 320 is provided with an opening on the side facing the wafer boat 30 as a gas delivery part. Specifically, the branch pipe 320 can be welded to the main pipe 310, or the branch pipe 320 and the main pipe 310 can be integrally formed.

[0067] As shown in Figure 7 , Figure 8 and Figure 10 , when the gas inlet structure 100 serves as the target gas delivery structure, the main pipe 310 is a main gas inlet pipe 110, the main gas inlet pipe 110 is hollow inside to form a main gas inlet channel 111, and the branch pipe 320 is a branch gas inlet pipe 120, the branch gas inlet pipe 120 is hollow inside to form a branch gas inlet channel 121; when the gas outlet structure 200 serves as the target gas delivery structure, the main pipe 310 is a main gas outlet pipe 210, the main gas outlet pipe 210 is hollow inside to form a main gas outlet channel 211, and the branch pipe 320 is a branch gas outlet pipe 220, the branch gas outlet pipe 220 is hollow inside to form a branch gas outlet channel 221.

[0068] As shown in Figure 10 , the gas inlet structure 100 and the gas outlet structure 200 both serve as the target gas delivery structure, and the branch pipe 320 is semi-annular. The plurality of branch pipes 320 of the two target gas delivery structures are connected one by one to form an annular body 50B. The annular body 50B is arranged approximately coaxially with the wafer boat 30. In a first aspect, the plurality of branch pipes 320 of the gas inlet structure 100 and the gas outlet structure 200 are connected one by one, which can effectively improve the structural stability of the uniform flow assembly 50 and the positional stability of the gas inlet structure 100 and the gas outlet structure 200 arranged in the furnace pipe 20, thereby ensuring the effective cooperation of the plurality of gas flow regions 50A formed by the uniform flow assembly 50 and the plurality of spaced spaces 40A formed on the wafer boat 30, and further ensuring the uniformity of film formation on the surface of the wafer 40; in a second aspect, the shape of the gas flow region 50A formed between the annular bodies 50B is similar to the shape of the wafer 40, and the distance between the different regions of the gas inlet part 140 and the corresponding edges of the wafer 40 is approximately equal along the width direction of the gas flow region 50A, thereby further improving the uniformity of the gas flow field in the wafer 40 region and further improving the uniformity of film formation of the reaction gas on the surface of the wafer 40.

[0069] In a third aspect, the branch inlet pipe 120 of the inlet structure 100 and the branch outlet pipe 220 of the outlet structure 200 are both in the form of a semi-annular pipe body, and the corresponding branch inlet pipe 120 and branch outlet pipe 220 are detachably connected to form an annular body 50B. The inlet portion 140 can be arranged in the arrangement area of the branch inlet pipe 120, and the outlet portion 240 can be arranged in the arrangement area of the branch outlet pipe 220 according to the diameter of the wafer 40, so as to improve the arrangement convenience and flexibility of the inlet portion 140 and the outlet portion 240. In a fourth aspect, the inlet structure 100 and the outlet structure 200 are both in the form of a main pipe 310 and a plurality of branch pipes 320, and the main structures are the same. The main structures of the inlet structure 100 and the outlet structure 200 can be mass-produced, and then the inlet portion 140 or the outlet portion 240 can be processed on the branch pipe 320 according to the needs, so as to improve the processing convenience of the uniform flow assembly 50.

[0070] In the embodiment of the present application, as shown in Figure 3 The inlet structure 100 and the outlet structure 200 are fixedly arranged in the furnace pipe 20, and there is a rotation gap 50C between the inlet structure 100 and the outlet structure 200 and the wafer boat 30. In the process, the inlet structure 100 and the outlet structure 200 remain stationary in the furnace pipe 20, and correspondingly, the airflow area 50A and the airflow field in the airflow area 50A remain in a dynamic stable state. The wafer boat 30 rotates, and the rotation gap 50C can ensure the relative rotation of the wafer boat 30 and the inlet structure 100 and the outlet structure 200. Correspondingly, the wafer 40 rotates synchronously with the wafer boat 30, and at the same time, the wafer 40 deflects in the circumferential direction relative to the airflow field, so as to further improve the completeness and uniformity of the thin film formed by the reaction gas on the surface of the wafer 40.

[0071] Specifically, in the embodiment of the present application, the inner diameter of the annular body 50B is 5-10mm larger than the outer diameter of the wafer boat 30. The rotation gap 50C of 2.5-5mm is formed between the annular body 50B and the wafer boat 30. On the basis of ensuring that the wafer boat 30 can rotate relative to the uniform flow assembly 50 and that the airflow area 50A covers the area where the wafer 40 is located, the extension length of the airflow area 50A can be minimized, and the utilization rate of the reaction gas can be improved.

[0072] In the embodiment of the present application, the thickness of the branch pipe 320 is 1-2 mm less than the thickness of the corresponding spacing space 40A. When the gas inlet structure 100 and the gas outlet structure 200 adopt the form of the target gas conveying structure, the plurality of branch pipes 320 of the two correspondingly locate the outer side of the plurality of spacing spaces 40A and shield the outer side of the spacing space 40A; the maximum size of the branch pipe 320 in the first direction, that is, the outer diameter of the branch pipe 320, is the thickness thereof, and the distance of the spacing space 40A along the axial direction of the wafer 40 is the thickness thereof; the thickness of the branch pipe 320 is set to be less than the thickness of the spacing space 40A in the embodiment of the present application, so that the branch pipe 320 does not completely shield the outer port of the spacing space 40A, preferably, there is a gap between the branch pipe 320 and the upper and lower wafers 40, and in the heating process, the furnace body 10 can radiate and heat the wafer 40 through the gap; in the cooling process, the wafer 40 can dissipate heat outward through the gap, thereby improving the heating efficiency and the cooling efficiency of the vertical furnace on the wafer 40 and reducing the efficiency of heat exchange between the wafer 40 and the furnace body 10 as much as possible.

[0073] In the embodiment of the present application, the target gas conveying part is divided into a plurality of gas conveying areas along the extension direction of the corresponding branch channel 321, and the gas conveying areas gradually increase in size in the direction away from the main channel 311. The main channel 311 conveys the reaction gas to the branch channel 321 through the communication part, and the reaction gas continuously flows out to the outside during the process of flowing through the branch channel 321; in the direction away from the main channel 311, the gas conveying area of the gas conveying area is gradually increased to compensate for the gradual decrease in gas pressure, thereby improving the flow balance of the reaction gas conveyed outward by the plurality of gas conveying areas, and correspondingly improving the uniformity of the gas flow field formed by the plurality of gas conveying areas.

[0074] Specifically, in the embodiment of the present application, the target gas conveying part is symmetrically arranged with respect to the main channel 311. The main channel 311 is located at the midpoint of the plurality of gas conveying areas, and on the basis that the arrangement length of the plurality of gas conveying areas is not less than the diameter of the wafer 40, the spacing of the main channel 311 in the gas conveying area is minimized to ensure the uniformity of the gas flow of each gas conveying area.

[0075] In the embodiment of the present application, the gas conveying area of the plurality of target gas conveying parts gradually increases in size in the direction away from the interface end of the main channel 311. The interface end of the main channel 311 is used to connect the reaction gas source, and the reaction gas source conveys the reaction gas to the main channel 311 through the interface end; the reaction gas continuously flows out to the outside during the process of flowing through the branch channel 321; in the direction away from the interface end, the total gas conveying area of the plurality of gas conveying areas in each target gas conveying part is gradually increased to compensate for the gradual decrease in gas pressure, thereby improving the gas pressure balance of the plurality of target gas conveying parts, and correspondingly improving the uniformity of the gas flow field formed by each target gas conveying part, and ensuring the consistency of film formation on the surface of each wafer 40.

[0076] In the embodiment of the present application, asFigure 10 As shown in the figure, the branch flow channel 321 is a curved flow channel coaxial with the crystal boat 30. The branch flow channel 321 extends along the circumference of the wafer 40, and the second direction Y is the RZ direction. The plurality of gas delivery zones inside the branch flow channel 321 are approximately equally distant from the edge of the wafer 40, thereby further improving the effectiveness and uniformity of the gas flow field formed by the plurality of gas delivery zones of the target gas delivery portion on the surface of the wafer 40, and correspondingly further improving the uniformity of film formation on the surface of the wafer 40 and reducing the consumption of reaction gas.

[0077] In the embodiment of the present application, as shown in Figures 4-6 , Figure 10 , the gas inlet structure 100 is the target gas delivery structure, the gas inlet portion 140 includes a plurality of gas inlets 141, the plurality of gas inlets 141 are arranged at intervals along the extension direction of the corresponding branch flow channel 321, and the diameter of each gas inlet 141 gradually increases in the direction away from the main flow channel 311. As the target gas delivery structure, the gas inlet portion 140 is the target gas delivery portion, the branch gas inlet channel 121 is the branch flow channel 321, a plurality of gas inlets 141 are arranged along the extension direction of the branch gas inlet channel 121 as gas delivery zones, and by setting the diameter of each gas inlet 141, the gas inlet area of each gas inlet 141 is adjusted to compensate for the gas pressure at its corresponding position, thereby improving the gas inlet uniformity of each gas inlet 141.

[0078] In the embodiment of the present application, as shown in Figure 10 , the extension directions of the plurality of gas inlets 141 of the same gas inlet portion 140 are arranged in parallel. The directions in which the reaction gas is blown out of the plurality of gas inlets 141 are parallel to each other, thereby improving the smoothness and uniformity of the gas flow field formed by the gas inlet portion 140 on the surface of the wafer 40, reducing the occurrence of collisions between the reaction gas blown out of the plurality of gas inlets 141, which would cause the gas flow field to be turbulent and affect the uniformity of film formation. Preferably, the extension direction of the gas inlet 141 is parallel to the perpendicular line from the center of the wafer 40 to the axis of the main gas inlet channel 111.

[0079] In the embodiment of the present application, as shown in Figure 4 and Figure 5As shown, along the extension direction of the branch flow channel 321, the communication position of the main flow channel 311 and the branch flow channel 321 is staggered with the corresponding gas inlet 141. The branch flow channel 321 corresponding to the flow channel section of the main flow channel 311 is not provided with the gas inlet 141 as a guide section, which can shield and guide the communication port of the branch flow channel 321 and the main flow channel 311. The reaction gas of the main flow channel 311 first flows into the guide section through the communication port, and is diverted under the guidance of the guide section, and flows into the branch flow channel 321 along the extension direction of the branch flow channel 321 to both sides, and transports the reaction gas to each gas inlet 141, thereby improving the uniformity of the reaction gas transported by the main flow channel 311 to each gas inlet 141 of the branch flow channel 321, and reducing the case that the reaction gas of the main flow channel 311 directly flows into the corresponding gas inlet 141 of the communication port, and a large amount of reaction gas is sprayed out of the gas inlet 141, resulting in a large difference in flow rate and uniformity of the reaction gas blown out of each gas inlet 141.

[0080] As shown in the drawings, Figure 6 The exhaust part 240 includes 12 exhaust holes arranged in the horizontal direction, and the 12 exhaust holes are symmetrically arranged about the main gas inlet pipe 110. The hole diameters of the six exhaust holes located on the same side of the main gas inlet pipe 110 gradually increase in the direction away from the main gas inlet pipe 110. Specifically, the outer diameter of the main gas inlet pipe 110 is 10-30 mm, the inner diameter of the main gas inlet pipe 110 is 5-8 mm, and the hole diameters of the six exhaust holes are 2±0.2 mm, 2.5±0.2 mm, 3±0.2 mm, 3.5±0.2 mm, 4±0.2 mm, and 4.5±0.2 mm, respectively.

[0081] As shown in the drawings, Figures 7-10 The exhaust structure 200 is used as a target gas conveying structure, and the exhaust part 240 includes a strip-shaped exhaust port 241. The extension direction of the exhaust port 241 is consistent with the extension direction of the corresponding branch flow channel 321. When the exhaust structure 200 is used as a target gas conveying structure, the exhaust part 240 is provided as a strip-shaped exhaust port 241 extending along the length direction of the corresponding branch flow channel 321. The exhaust port 241 can comprehensively receive and suck the reaction gas blown out of the opposite gas inlet part 140 and the remaining gas after the reaction of the reaction gas, thereby improving the comprehensive exhaust effect of the exhaust part 240.

[0082] In the direction away from the main flow channel 311, the width of the exhaust port 241 gradually increases, so as to improve the suction uniformity of each exhaust port 241, thereby further improving the uniformity of the gas flow field.

[0083] Specifically, the outer diameter of the main exhaust pipe 210 is 20-200 mm, and the inner diameter of the main exhaust pipe 210 is 30-150 mm. The width of the exhaust port 241 changes between (3-8)±1 mm.

[0084] In the embodiment of the present application, the flow channel structure formed by the gas inlet channel 13A and the gas inlet part 140 in the gas inlet structure 100 is at least two groups, and each group of flow channel structure is arranged in staggered layers along the first direction. The gas inlet structure 100 includes multiple groups of flow channel structure, each group of flow channel structure is arranged in vertical staggered layers and is relatively independent; during the process, different reaction gases can be input into different flow channel structures at the same time, thereby improving the functionality, applicability and process efficiency of the uniform flow assembly 50 and the vertical furnace.

[0085] In the embodiment of the present application, as shown in Figure 3 The outer ring gas inlet 16 is arranged corresponding to the area of the gas inlet structure 100 of the furnace body 10, and is configured to supply the filling gas to the peripheral space 50E. The outer ring gas outlet 17 is arranged corresponding to the area of the gas outlet structure 200 of the furnace body 10, and is configured to discharge the gas in the peripheral space 50E. The reaction space 50D is surrounded by the gas inlet structure 100 and the gas outlet structure 200 of the uniform flow assembly 50, and the peripheral space 50E is surrounded outside the reaction space 50D. In use, the outer ring gas inlet 16 is connected to the filling gas source, and the outer ring gas outlet 17 is connected to the exhaust pump 70. During the process, the reaction gas source supplies the reaction gas to the reaction space 50D through the gas inlet structure 100, and the gas outlet structure 200 discharges the remaining gas and particulate matter in the reaction space 50D. At the same time, the filling gas source supplies the filling gas that does not affect the reaction of the reaction gas to the peripheral space 50E through the outer ring gas inlet 16, and the filling gas flows through the peripheral space 50E and is discharged through the outer ring gas outlet 17, so as to achieve a balanced state of dynamically filling the peripheral space 50E, thereby reducing the escape of the reaction gas in the reaction space 50D to the peripheral space 50E, and reducing the occurrence of the case that the reaction gas is greatly consumed and the cost is high. Correspondingly, the reaction gas is guided to flow through the interval space 40A to the greatest extent, thereby improving the utilization rate of the reaction gas and reducing the cost.

[0086] The filling gas can be selected from inert gases such as argon and nitrogen.

[0087] In the embodiment of the present application, the uniform flow assembly 50 surrounds the reaction space 50D, and the gas pressure in the reaction space 50D is not less than the gas pressure in the peripheral space 50E. During the process, the gas pressure of the reaction gas in the reaction space 50D can be equal to the gas pressure of the filling gas in the peripheral space 50E, and the reaction gas completely flows through the interval space 40A to maximize the utilization rate of the reaction gas. In addition, the gas pressure of the reaction gas in the reaction space 50D can be slightly greater than the gas pressure of the filling gas in the peripheral space 50E, and the pressure difference between the two can be 0.2-10 torr. This process condition is easier to control, and the reaction gas in the reaction space 50D has a flow trend to the peripheral space 50E, thereby reducing the occurrence of the case that the filling gas flows to the reaction space 50D to affect the film uniformity.

[0088] In the embodiment of the present application, as shown in Figure 3 The outer ring gas feeding pipe 82 extends upward in the outer peripheral space 50E and is located on the side of the gas inlet structure 100 away from the wafer boat 30. During the process, the filling gas is fed upward into the outer peripheral space 50E through the outer ring gas feeding pipe 82, and then flows to the outer ring gas outlet 17 along the outer peripheral space 50E under the suction of the outer ring gas outlet 17 and is discharged, so as to reduce the disturbance of the filling gas directly blowing out toward the reaction space 50D to the reaction gas in the reaction space 50D, thereby improving the filling effect of the filling gas on the outer peripheral space 50E and improving the stability of the gas flow field formed by the reaction gas in the reaction space 50D.

[0089] Specifically, in the embodiment of the present application, as shown in Figure 3 The outer ring gas feeding pipe 82 extends vertically, and the top end of the outer ring gas feeding pipe 82 is not lower than the gas inlet structure 100 and the wafer boat 30. The outer ring gas outlet 17 is located in the lower region of the furnace body 10. The space above the wafer boat 30 and the flow uniformizing assembly 50 is a top space 51, and the annular space outside the flow uniformizing assembly 50 is an outer ring space 52. During the process, the filling gas fed through the outer ring gas feeding pipe 82 directly flows into the top space 51, and then flows downward to the outer ring gas outlet 17 along the outer ring space 52 under the suction of the outer ring gas outlet 17 and is discharged, so as to ensure the effective filling of the filling gas on the entire region of the outer peripheral space 50E and reduce the occurrence of the case that the filling gas blows in at a lower position and directly flows horizontally to the outer ring gas outlet 17.

[0090] Specifically, in the embodiment of the present application, along the circumference of the outer peripheral space 50E, the outer ring gas feeding pipe 82 corresponds to the middle position of the gas inlet structure 100, and the outer ring gas outlet 17 is oppositely arranged with the outer ring gas feeding pipe 82. Along the circumference of the outer peripheral space 50E, the outer ring gas outlet 17 corresponds to the middle position of the gas outlet structure 200, so that the flow trend of the reaction gas in the reaction space 50D and the flow trend of the filling gas in the outer peripheral space 50E are consistent, thereby ensuring the flow stability of the reaction gas in the reaction space 50D and the flow stability of the filling gas in the outer peripheral space 50E, reducing the disturbance of the suction of the gas outlet structure 200 to the filling gas and the disturbance of the suction of the outer ring gas outlet 17 to the reaction gas.

[0091] In the embodiment of the present application, as shown in Figure 3As shown, the furnace body 10 specifically comprises a ring-shaped side wall 11, an insulation layer 12 arranged on the top of the ring-shaped side wall 11, and a base 13 arranged at the bottom of the ring-shaped side wall 11, wherein the base 13 specifically comprises a bottom plate 13a and a bottom wall 13b arranged around the bottom plate 13a, the top end of the bottom wall 13b is outwardly folded with a step 13c, the furnace tube 20 is arranged at the step 13c, the insulation barrel 14 is arranged on the bottom plate 13a, and there is an air gap 15 between the insulation barrel 14 and the bottom plate 13a; the crystal boat 30 is arranged on the top of the insulation barrel 14; the main gas inlet pipe 110, the main gas outlet pipe 210 and the outer ring gas supply pipe 82 all pass through the bottom wall 13b to extend outwardly to be connected with corresponding gas sources or the exhaust pump 70, and the outer ring gas outlet 17 is arranged on the bottom wall 13b to be connected with the exhaust pump 70.

[0092] Specifically, as shown in the drawings, Figure 3 The outer ring gas outlet 17 is connected with an outer ring gas outlet pipe 83, the outer ring gas outlet pipe 83 extends upwardly in the outer peripheral space 50E and is located on the side of the exhaust structure 200 away from the crystal boat 30. The suction effect of the outer ring gas outlet pipe 83 on the outer peripheral space 50E is downward, so as to reduce the disturbance of the reaction gas in the reaction space 50D caused by the suction of the outer ring gas outlet 17 directly toward the reaction space 50D, thereby further improving the stability of the gas flow field formed in the reaction space 50D; wherein the outer ring gas outlet pipe 83 can extend out of the bottom wall 13b.

[0093] As shown in the drawings, Figure 3 When the vertical furnace provided by the embodiment of the present application is used for thin film deposition, the main gas inlet pipe 110 transports the reaction gas upwardly from bottom to top, the reaction gas flows through the corresponding interval space 40A in the approximate horizontal direction through the exhaust part 240 at different heights, flows to the opposite exhaust part 240 and is collected into the main gas outlet pipe 210 to be discharged downwardly; the outer ring gas supply pipe 82 transports the filling gas upwardly from bottom to top, the filling gas is sent into the outer peripheral space 50E through the top port and is divided into two paths under the suction of the outer ring gas outlet pipe 83, one path of the filling gas flows through the top space 51 and then flows downwardly along the outer ring space 52 to the outer ring gas outlet pipe 83 and is discharged; the other path of the filling gas flows downwardly along the side of the outer ring space 52 where the outer ring gas supply pipe 82 is located to the bottom plate 13a, and then flows to the outer ring gas outlet pipe 83 through the air gap 15 between the insulation barrel 14 and the bottom plate 13a and is discharged.

[0094] In the embodiment of the present application, as shown in the drawings, Figure 3 Figure 3As shown, the outer ring exhaust port 17 is connected to the exhaust pump 70 through the first pipeline 61, and the first pipeline 61 is provided with a first regulating valve 62; the interface end of the exhaust flow channel 23A of the exhaust structure 200 is connected to the exhaust pump 70 through the second pipeline 64, and the second pipeline 64 is provided with a second regulating valve 65. In the process, the exhaust pump 70 operates, and the opening degrees of the first regulating valve 62 and the second regulating valve 65 can be adjusted according to the required air pressure of the reaction space 50D and the peripheral space 50E, and the suction effect of the outer ring exhaust port 17 on the peripheral space 50E through the first pipeline 61 and the suction effect of the exhaust part 240 on the corresponding interval space 40A through the second pipeline 64 are adjusted accordingly; wherein the adjustment of the suction effect of the two pipelines is realized by a single exhaust pump 70, which is simple in structure and strong in function.

[0095] Wherein, the first regulating valve 62 can adopt a two-step valve, and the second regulating valve 65 can adopt a control butterfly valve; the first pipeline 61 can be provided with a first vacuum gauge 63, and the second pipeline 64 can be provided with a second vacuum gauge 66; the first vacuum gauge 63, the second vacuum gauge 66, the first regulating valve 62 and the second regulating valve 65 are all connected to a controller, which adjusts the opening degree of the first regulating valve 62 according to the vacuum pressure of the first pipeline 61 measured by the first vacuum gauge 63, and adjusts the opening degree of the second regulating valve 65 according to the vacuum pressure of the second pipeline 64 measured by the second vacuum gauge 66.

[0096] Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present application, and not to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that: it can still modify the technical solutions recorded in the foregoing embodiments, or make equivalent replacement for part or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A flow uniformity assembly, comprising: The application relates to a target gas conveying structure, comprising: an air inlet structure (100) having an air inlet flow channel (13A) and a plurality of air inlet parts (140) connected to the air inlet flow channel (13A), the plurality of air inlet parts (140) are arranged in a first direction, the air inlet part (140) comprises a plurality of air inlet openings (141), and the extension directions of the plurality of air inlet openings (141) of the same air inlet part (140) are arranged in parallel; and an air outlet structure (200) having an air outlet flow channel (23A) and a plurality of air outlet parts (240) connected to the air outlet flow channel (23A), the plurality of air outlet parts (240) are arranged in the first direction; the air inlet structure (100) and / or the air outlet structure (200) are the target gas conveying structure, the air inlet flow channel (13A) or the air outlet flow channel (23A) of the target gas conveying structure is the target gas flow channel, and the air inlet part (140) or the air outlet part (240) of the target gas conveying structure is the target gas part; in the target gas conveying structure, the target gas flow channel comprises a main flow channel (311) extending in the first direction and a plurality of branch flow channels (321) extending in a second direction, the plurality of branch flow channels (321) are all connected to the main flow channel (311) and are arranged in the extension direction of the main flow channel (311) in a spaced manner; the plurality of target gas parts are respectively connected to one of the branch flow channels (321), and the target gas part is divided into a plurality of gas conveying areas in the extension direction of the corresponding branch flow channel (321), and the gas conveying areas gradually increase in the direction away from the main flow channel (311); wherein the extension direction of the main flow channel (311) is consistent with the axial direction of a crystal boat (30), the extension direction of the branch flow channel (321) is parallel to the radial cross section of a wafer (40), and the branch flow channel (321) is an arc-shaped flow channel coaxial with the crystal boat (30); the plurality of air inlet parts (140) and the plurality of air outlet parts (240) are arranged on the opposite sides of the crystal boat (30) and are arranged in a facing manner, each air inlet part (140) corresponds to one air outlet part (240) to form an air flow area (50A) therebetween, the plurality of air flow areas (50A) can respectively flow through the spacing space (40A) between two adjacent wafers (40) in the crystal boat (30), and the flow area of the air flow area (50A) completely covers the area where the spacing space (40A) is located.

2. The flow uniforming assembly of claim 1, wherein, The extension direction of the air flow area (50A) is parallel to the radial cross section of the wafer (40).

3. The flow uniforming assembly of claim 1, wherein, The target gas part is arranged in a symmetrical manner relative to the main flow channel (311).

4. The flow uniforming assembly of claim 1, wherein, In the direction away from the interface end of the main flow channel (311), the gas conveying areas of the plurality of target gas parts gradually increase.

5. The flow uniforming assembly of any of claims 1-4, wherein, The air inlet structure (100) is the target gas conveying structure, the plurality of air inlet openings (141) of the same air inlet part (140) are arranged in the extension direction of the corresponding branch flow channel (321) in a spaced manner, and the diameters of the air inlet openings (141) gradually increase in the direction away from the main flow channel (311).

6. The flow uniforming assembly of claim 5, wherein, The communication position of the main flow channel (311) and the branch flow channel (321) along the extension direction of the branch flow channel (321) is staggered with the corresponding air inlet (141).

7. The flow uniforming assembly of any of claims 1-4, wherein, The exhaust structure (200) is the target gas conveying structure, and the exhaust part (240) comprises a strip-shaped exhaust port (241), and the extension direction of the exhaust port (241) is consistent with the extension direction of the corresponding branch flow channel (321).

8. The flow uniforming assembly of any of claims 1-4, wherein, The target gas conveying structure comprises a main pipe (310) extending along a first direction and a plurality of branch pipes (320) communicated with the main pipe (310), the main flow channel (311) is formed in the main pipe (310), and the branch flow channel (321) is formed in the branch pipe (320).

9. The flow uniforming assembly of claim 8, wherein, The air inlet structure (100) and the exhaust structure (200) are both the target gas conveying structure, the branch pipe (320) is semi-annular, and a plurality of branch pipes (320) of the two target gas conveying structures are connected one by one to form an annular body (50B).

10. The flow uniforming assembly of claim 9, wherein, The inner diameter of the annular body (50B) is 5-10 mm larger than the outer diameter of the boat (30).

11. The flow uniforming assembly of claim 8, wherein, The thickness of the branch pipe (320) is 1-2 mm smaller than the thickness of the corresponding spacing space (40A).

12. The flow uniforming assembly of any of claims 1-3, wherein, In the air inlet structure (100), the flow channel structure formed by the air inlet flow channel (13A) and the air inlet part (140) is at least two groups, and each group of the flow channel structure is arranged in a staggered layer along the first direction.

13. A vertical furnace characterized by Comprise: a furnace body (10), a furnace pipe (20) arranged in the furnace body (10); a boat (30) arranged in the furnace pipe (20) and capable of carrying a plurality of vertically spaced wafers (40); and The uniform flow assembly (50) of any one of claims 1-12 is arranged in the furnace pipe (20), and the air inlet structure (100) and the exhaust structure (200) of the uniform flow assembly are located on opposite sides of the boat (30), a plurality of air inlet parts (140) of the air inlet structure (100) are arranged opposite a plurality of exhaust parts (240) of the exhaust structure (200), each air inlet part (140) corresponds to one of the exhaust parts (240) to form an air flow area (50A) therebetween, a plurality of air flow areas (50A) respectively flow through the spacing space (40A) between two adjacent wafers (40) in the boat (30), and the flow area of the air flow area (50A) completely covers the area where the spacing space (40A) is located.

14. The vertical furnace of claim 13, wherein The air inlet structure (100) and the exhaust structure (200) are both fixedly arranged in the furnace pipe (20), and there is a rotation gap (50C) between the air inlet structure (100), the exhaust structure (200) and the boat (30).

15. A shaft furnace according to claim 13 or 14, characterized in that The uniform flow assembly (50) and the furnace tube (20) form a peripheral space (50E), the furnace body (10) is provided with an outer ring gas inlet (16) corresponding to the area of the gas inlet structure (100), the outer ring gas inlet (16) is configured to supply the peripheral space (50E) with filling gas; the furnace body (10) is provided with an outer ring gas outlet (17) corresponding to the area of the gas outlet structure (200), the outer ring gas outlet (17) is configured to discharge the gas in the peripheral space (50E).

16. The vertical furnace of claim 15, wherein The uniform flow assembly (50) forms a reaction space (50D), the gas pressure in the reaction space (50D) is not less than the gas pressure in the peripheral space (50E).

17. The vertical furnace of claim 15, wherein The outer ring gas inlet (16) is connected with an outer ring gas inlet pipe (82), the outer ring gas inlet pipe (82) extends upward in the peripheral space (50E) and is located on the side of the gas inlet structure (100) away from the boat (30).

18. The vertical furnace of claim 17, wherein, The outer ring gas inlet pipe (82) extends vertically, and the top end of the outer ring gas inlet pipe (82) is not lower than the gas inlet structure (100) and the boat (30); the outer ring gas outlet (17) is located in the lower area of the furnace body (10).

19. The vertical furnace of claim 18, wherein Along the circumference of the peripheral space (50E), the outer ring gas inlet pipe (82) corresponds to the middle position of the gas inlet structure (100), and the outer ring gas outlet (17) corresponds to the middle position of the gas outlet structure (200).

20. The vertical furnace of claim 15, wherein, The outer ring gas outlet (17) is connected with an exhaust pump (70) through a first pipeline (61), and the first pipeline (61) is provided with a first regulating valve (62); the interface end of the exhaust flow channel (23A) of the gas outlet structure (200) is connected with the exhaust pump (70) through a second pipeline (64), and the second pipeline (64) is provided with a second regulating valve (65).

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