A photoresist thinning method, device and storage medium

Abstract

Embodiments of the present application provide a photoresist thinning method, device and storage medium, the method comprising: moving a wafer to be processed from a loading position to a reaction mechanism through a feeding and discharging module; controlling a generating mechanism to deliver plasma to the reaction mechanism; controlling a vacuumizing device to perform vacuumizing treatment on the reaction mechanism, so that the plasma uniformly etches a first photoresist on the surface of the wafer to be processed to obtain a target wafer; and moving the target wafer from the reaction mechanism to a discharging position through the feeding and discharging module. The generated plasma is uniformly delivered to the reaction mechanism through the generating mechanism, and the vacuumizing device is synchronously controlled to perform vacuumizing treatment on the reaction mechanism, so that the plasma uniformly etches the first photoresist on the surface of the wafer to be processed, the photoresist thinning of the wafer can be completed according to the requirement, and the thinning efficiency is high and the cost is low.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor processing, and particularly relates to a photoresist thinning method, a photoresist thinning device and a storage medium. BACKGROUND

[0002] The photoresist is a thin film material whose solubility changes after irradiation or radiation of ultraviolet light, electron beams, ion beams, X-rays, etc. When a semiconductor material is processed on the surface, a desired image can be obtained on the surface by using a proper selective photoresist.

[0003] At present, the photoresist removal process of a wafer or an integrated circuit chip usually adopts a dry photoresist removal method. The dry photoresist removal method can only remove all the photoresist or remove the photoresist unevenly, so that the prior art cannot meet the requirement of uniformly thinning the photoresist for circuit manufacturing. SUMMARY

[0004] The following is a summary of the subject matter of the detailed description herein. This summary is not intended to limit the scope of the claims.

[0005] The main purpose of the embodiment of the present application is to provide a photoresist thinning method, a photoresist thinning device and a storage medium, which can uniformly thin the photoresist.

[0006] In a first aspect, the embodiment of the present application provides a photoresist thinning method applied to a photoresist thinning device, wherein the photoresist thinning device comprises a feeding and discharging module and an etching module, the etching module comprises at least one etching unit, the etching unit comprises a photoresist etching device and a vacuum pumping device, the photoresist etching device comprises a generating mechanism and a reaction mechanism, and the photoresist thinning method comprises the following steps.

[0007] The feeding and discharging module is used to move a wafer to be processed from a feeding position to the reaction mechanism;

[0008] The generating mechanism is controlled to uniformly deliver generated plasma to the reaction mechanism, so that the plasma is uniformly distributed in the reaction mechanism;

[0009] The vacuum pumping device is controlled to perform vacuum pumping treatment on the reaction mechanism, so that a target wafer is obtained after the first photoresist on the surface of the wafer to be processed is etched by the plasma, the flatness of the second photoresist on the surface of the target wafer is greater than a preset flatness, and the second photoresist is obtained by etching the first photoresist;

[0010] The feeding and discharging module is used to move the target wafer from the reaction mechanism to a discharging position.

[0011] In some alternative embodiments, the generating mechanism comprises an ionizer, an accelerator and a diffusion disc; and the controlling the generating mechanism to uniformly deliver the generated plasma to the reaction mechanism comprises:

[0012] generating the plasma with uniform concentration by the ionizer and delivering the plasma to the accelerator;

[0013] accelerating the plasma to a preset speed by the accelerator and delivering the plasma to the diffusion disc;

[0014] uniformly diffusing the plasma to the reaction mechanism by the diffusion disc.

[0015] In some alternative embodiments, the uniformly diffusing the plasma to the reaction mechanism by the diffusion disc comprises:

[0016] obtaining a diffusion resistance map of the diffusion disc, the diffusion resistance map indicating molecular diffusion resistance of each region on the diffusion disc;

[0017] obtaining ion type of the plasma and ion speed of the plasma when reaching the diffusion disc;

[0018] determining a first aperture of a central region on the diffusion disc according to the ion type and a first preset relationship table, the first aperture representing diameter of a first diffusion hole on the central region, the central region matching ion output port of the accelerator, the first preset relationship table indicating relationship between the ion type and the first aperture;

[0019] determining a first density of the central region on the diffusion disc according to the ion speed and a second preset relationship table, the first density representing setting density of the first diffusion hole;

[0020] setting a second aperture and a second density of a second diffusion hole according to the diffusion resistance map, the first density and the first aperture, the second diffusion hole being arranged around the central region, the second density representing setting density of the second diffusion hole;

[0021] uniformly diffusing the plasma to the reaction mechanism by the first diffusion hole and the second diffusion hole.

[0022] In some alternative embodiments, the setting the second aperture and the second density of the second diffusion hole according to the diffusion resistance map, the first density and the first aperture comprises:

[0023] obtaining a second concentric circle of the second diffusion hole;

[0024] obtaining a first concentric circle of the first diffusion hole, the first concentric circle and the second concentric circle sharing a same center;

[0025] obtaining a diameter difference between the second concentric circle and the first concentric circle;

[0026] setting the second aperture according to the diameter difference and the first aperture;

[0027] determining an ion diffusion coefficient according to the diffusion resistance map, the first aperture and the first density;

[0028] determining the second density according to the ion diffusion coefficient, the diffusion resistance map and the diameter difference.

[0029] In some optional embodiments, the reaction mechanism reaction chamber and the reaction table, the adsorption disc and the first lifting device arranged in the reaction chamber, the adsorption disc is fixedly arranged on the first lifting device, the reaction table is fixedly arranged on the adsorption disc, the area of the adsorption disc located outside the periphery of the reaction table is uniformly provided with a plurality of adsorption through holes, the vacuum pumping device comprises a plurality of vacuum pumping pipelines, and the vacuum pumping pipelines are communicated with the reaction chamber; the control of the vacuum pumping device for the reaction mechanism to perform vacuum pumping treatment so that the target wafer is obtained after the first photoresist on the surface of the wafer to be processed is uniformly etched by plasma, comprising:

[0030] obtaining the etching depth and the etching time of the wafer to be processed, the etching depth representing the depth difference between the first photoresist and the second photoresist, and the etching time representing the time for etching the first photoresist by plasma;

[0031] obtaining the ion density map of the wafer to be processed, the ion density map indicating the plasma density and plasma energy of each region on the surface of the first photoresist;

[0032] controlling the extraction power of the plurality of vacuum pumping pipelines and the lifting height of the first lifting device according to the ion density map, the etching depth and the etching time, so that after the plurality of vacuum pumping pipelines perform vacuum pumping treatment through the adsorption through holes, the target wafer is obtained after the first photoresist is uniformly etched by plasma.

[0033] In some optional embodiments, the feeding and discharging module comprises a first feeding and discharging mechanism and a second feeding and discharging mechanism, the second feeding and discharging mechanism comprises a wafer placing unit, a wafer cooling unit and a wafer taking and placing unit, the wafer cooling unit comprises a cooling table, a cooling pipeline and a cooling machine; the target wafer is moved from the reaction mechanism to a discharging position by the feeding and discharging module, comprising:

[0034] controlling the wafer taking and placing unit to move the target wafer from the reaction mechanism to the cooling table;

[0035] obtaining a preset cooling time and a target temperature of the target wafer, the target temperature representing a first temperature before the target wafer starts to cool and a second temperature after the target wafer finishes cooling;

[0036] controlling a cooling power of the cooling machine according to the preset cooling time and the target temperature, so that the cooling machine cools the target wafer on the cooling table through the cooling pipeline;

[0037] controlling the first loading and unloading mechanism to move the target wafer, whose cooling is completed, from the cooling table to the unloading position.

[0038] In some optional embodiments, the wafer taking and placing unit comprises a rotating base, a second lifting device, a first loading and unloading assembly and a second loading and unloading assembly, the rotating base is fixedly arranged on the second lifting device, the first loading and unloading assembly and the second loading and unloading assembly are oppositely arranged and are both rotationally connected with the rotating base, the first loading and unloading assembly comprises a first rotating arm, a second rotating arm and a third rotating arm, a first end of the first rotating arm is rotationally connected with a first region of the rotating base, a second end of the first rotating arm is rotationally connected with a first end of the second rotating arm, a second end of the second rotating arm is rotationally connected with a first end of the third rotating arm, and a second end of the third rotating arm is fixedly connected with a first moving member, the second loading and unloading assembly comprises a fourth rotating arm, a fifth rotating arm and a sixth rotating arm, a first end of the fourth rotating arm is rotationally connected with a second region of the rotating base, a second end of the fourth rotating arm is rotationally connected with a first end of the fifth rotating arm, a second end of the fifth rotating arm is rotationally connected with a first end of the sixth rotating arm, and a second end of the third rotating arm is fixedly connected with a second moving member; and the controlling of the wafer taking and placing unit to move the target wafer from the reaction mechanism to the cooling table comprises:

[0039] obtaining first position information of the target wafer;

[0040] obtaining second position information of the first moving member and / or the second moving member;

[0041] generating, according to the first position information, the second position information and cooling position information of the cooling table, a first rotation time sequence graph of the first end of the first rotating arm relative to the first region of the rotating base, a second rotation time sequence graph of the first end of the second rotating arm relative to the second end of the first rotating arm, and a third rotation time sequence graph of the first end of the third rotating arm relative to the second end of the second rotating arm; and / or

[0042] generating a fourth rotation time sequence pattern of the first end of the fourth rotating arm relative to the second area of the rotating base, a fifth rotation time sequence pattern of the first end of the fifth rotating arm relative to the second end of the fourth rotating arm, and a sixth rotation time sequence pattern of the first end of the sixth rotating arm relative to the second end of the fifth rotating arm according to the first position information, the second position information, and the cooling position information of the cooling table;

[0043] controlling the first end of the first rotating arm to rotate relative to the first area of the rotating base according to the first rotation time sequence pattern, controlling the first end of the second rotating arm to rotate relative to the second end of the first rotating arm according to the second rotation time sequence pattern, and controlling the first end of the third rotating arm to rotate relative to the second end of the second rotating arm according to the third rotation time sequence pattern, so that the first transferring member transfers the target wafer to the cooling table; and / or

[0044] controlling the first end of the fourth rotating arm to rotate relative to the second area of the rotating base according to the fourth rotation time sequence pattern, controlling the first end of the fifth rotating arm to rotate relative to the second end of the fourth rotating arm according to the fifth rotation time sequence pattern, and controlling the first end of the sixth rotating arm to rotate relative to the second end of the fifth rotating arm according to the sixth rotation time sequence pattern, so that the second transferring member transfers the target wafer to the cooling table.

[0045] In some optional embodiments, the transferring of the wafer to be processed from the loading position to the reaction mechanism by the loading and unloading module comprises:

[0046] controlling the first loading and unloading mechanism to transfer the wafer to be processed from the loading position to the wafer placement unit;

[0047] obtaining an inscribed circle between all the photoresist etching devices and the wafer placement unit;

[0048] in the case that the first transferring member and the second transferring member transfer the wafer to be processed out of the wafer placement unit, controlling the first transferring member and the second transferring member to be located in a target area covered by the inscribed circle;

[0049] controlling the first end of the first rotating arm to rotate relative to the first area of the rotating base and controlling the first end of the fourth rotating arm to rotate relative to the second area of the rotating base, so that the first transferring member and the second transferring member transfer the wafer to be processed to the reaction mechanism after rotating in the target area.

[0050] In a second aspect, an embodiment of the present application provides a photoresist thinning device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, and the processor executes the computer program to implement the photoresist thinning method in the first aspect.

[0051] In a third aspect, a computer storage medium stores computer executable instructions for implementing the photoresist thinning method in the first aspect.

[0052] The present application has the following beneficial effects: when performing photoresist thinning, the wafer to be processed is transferred from the loading position to the reaction mechanism by the feeding and discharging module; the generated plasma is uniformly delivered to the reaction mechanism by the generating mechanism, so that the plasma is uniformly distributed in the reaction mechanism; the reaction mechanism is vacuumized by the vacuumizing device, so that the target wafer is obtained after the first photoresist on the surface of the wafer to be processed is etched by the plasma, the flatness of the second photoresist on the surface of the target wafer is greater than the preset flatness, and the second photoresist is obtained by etching the first photoresist; and the target wafer is transferred from the reaction mechanism to the discharging position by the feeding and discharging module. In the technical solution of the embodiment, the generated plasma is uniformly delivered to the reaction mechanism by the generating mechanism, and the reaction mechanism is vacuumized by the vacuumizing device at the same time, so that the first photoresist on the surface of the wafer to be processed is etched by the plasma, the photoresist thinning of the wafer can be completed according to the requirement, and the thinning efficiency is high and the cost is low.

[0053] Other features and advantages of the present application will be set forth in the following description, and in part will become apparent from the description, or can be learned by practice of the present application. The objects and other advantages of the present application will be realized and achieved by means of the structures particularly pointed out in the description and the claims. BRIEF DESCRIPTION OF DRAWINGS

[0054] Figure 1 is a schematic diagram of a system platform architecture for implementing a photoresist thinning method provided by an embodiment of the present application;

[0055] Figure 2 is a flowchart of a photoresist thinning method provided by an embodiment of the present application;

[0056] Figure 3 is a structural schematic diagram of a photoresist thinning device provided by an embodiment of the present application;

[0057] Figure 4 is a structural schematic diagram of a second feeding and discharging mechanism provided by an embodiment of the present application;

[0058] Figure 5is a structural schematic view of a first feeding and discharging mechanism provided by an embodiment of the present application;

[0059] Figure 6 is a sectional schematic view of an etching unit provided by an embodiment of the present application;

[0060] Figure 7 is a structural schematic view of a diffusion disc provided by an embodiment of the present application;

[0061] Figure 8 is a sectional schematic view of an adsorption disc provided by an embodiment of the present application.

[0062] Reference signs:

[0063] System platform architecture 1000, processor 1100, memory 1200;

[0064] First feeding and discharging mechanism 100, feeding position 110, discharging position 120, feeding and discharging mechanical arm 130;

[0065] Second feeding and discharging mechanism 200, cooling table 210, cooling pipeline 211, cooling machine 212, wafer placing unit 220, second lifting device 230, rotating base disc 231, first rotating arm 240, second rotating arm 241, third rotating arm 242, first moving member 243, fourth rotating arm 250, fifth rotating arm 251, sixth rotating arm 252, second moving member 253;

[0066] Etching unit 300, ionizer 310, accelerator 320, ion output port 321, diffusion disc 330, first diffusion hole 331, second diffusion hole 332, reaction table 340, adsorption disc 350, adsorption through hole 351, vacuum pipeline 360, first lifting device 370. DETAILED DESCRIPTION

[0067] In order to make the objectives, technical solutions and advantages of the present application clearer, the present application will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and should not be used to limit the present application.

[0068] It should be noted that although the functional modules are divided in the device schematic diagram, and the logical order is shown in the flowchart, in some cases, the steps shown or described can be executed in a manner different from the module division in the device or the order in the flowchart. The terms "first", "second", etc. in the specification, claims or above-described drawings are used to distinguish similar objects, and do not necessarily describe a specific order or sequence.

[0069] The embodiments of the present application will be further described below with reference to the accompanying drawings.

[0070] like Figure 1 As shown, Figure 1 This is a schematic diagram of a system platform architecture for performing a photoresist thinning method according to an embodiment of the present invention.

[0071] exist Figure 1 In the example, the system platform architecture 1000 includes a processor 1100 and a memory 1200, which can be connected via a bus or other means. Figure 1 Taking the example of a connection between China and Israel via a bus.

[0072] Memory 1200, as a non-transitory computer-readable storage medium, can be used to store non-transitory software programs and non-transitory computer-executable programs. Furthermore, memory 1200 may include high-speed random access memory and may also include non-transitory memory, such as at least one disk storage device, flash memory device, or other non-transitory solid-state storage device. In some embodiments, memory 1200 may optionally include memory remotely located relative to processor 1100, and these remote memories can be connected to the photoresist thinning apparatus via a network. Examples of such networks include, but are not limited to, the Internet, intranets, local area networks, mobile communication networks, and combinations thereof.

[0073] Those skilled in the art will understand that the system platform architecture 1000 can be applied to 5G communication network systems and subsequent evolved mobile communication network systems, etc., and this embodiment does not specifically limit it.

[0074] It will be understood by those skilled in the art that Figure 1 The system platform architecture 1000 shown does not constitute a limitation on the embodiments of the present invention. It may include more or fewer components than shown, or combine certain components, or have different component arrangements.

[0075] Reference Figure 2 , Figure 2 This is a flowchart of a photoresist thinning method provided in an embodiment of the present invention. Figures 3-8 The photoresist thinning equipment shown includes a loading and unloading module and an etching module. The etching module includes at least one etching unit 300. The etching unit 300 includes a photoresist etching device and a vacuum device. The photoresist etching device includes a generation mechanism and a reaction mechanism. The photoresist thinning method of this embodiment may include, but is not limited to, steps S100, S200, S300, and S400.

[0076] Step S100: The wafer to be processed is transferred from the loading position 110 to the reaction mechanism through the loading and unloading module;

[0077] Step S200, controlling the generating mechanism to uniformly deliver the generated plasma to the reaction mechanism, so that the plasma is uniformly distributed in the reaction mechanism;

[0078] Step S300, controlling the vacuumizing device to perform vacuumizing treatment on the reaction mechanism, so that the first photoresist on the surface of the wafer to be processed is uniformly etched by the plasma to obtain a target wafer, the flatness of the second photoresist on the surface of the target wafer is greater than a preset flatness, and the second photoresist is obtained by etching the first photoresist;

[0079] Step S400, moving the target wafer from the reaction mechanism to a discharging position 120 by the feeding and discharging module.

[0080] Specifically, the etching module of the present application comprises at least one etching unit 300 (a plurality of etching units can be arranged according to the production capacity demand to realize synchronous processing, and the specific number of arrangement is not limited here), each etching unit 300 is composed of a photoresist etching device and a vacuumizing device; and the photoresist etching device is further divided into a generating mechanism and a reaction mechanism, the generating mechanism is responsible for the generation of plasma, and the reaction mechanism is used for placing a wafer to be processed, and the photoresist on the surface of the wafer is etched and thinned by the plasma.

[0081] The wafer to be processed (the surface of which is coated with a first photoresist which needs to be thinned) is initially placed in a feeding position 110, and the feeding and discharging module grasps the wafer by a mechanical arm (equipped with a vacuum suction cup or a pneumatic gripper). During the movement of the mechanical arm, the positioning gap or mark of the edge of the wafer is recognized by a visual positioning system (such as an industrial camera), the attitude of the wafer is calibrated (to ensure concentricity with the bearing table of the reaction mechanism), and then the wafer is accurately placed on the worktable surface (ceramic or metal table resistant to high temperature and corrosion) of the reaction mechanism, and the feeding is completed.

[0082] The generating mechanism ionizes the reaction gas (such as oxygen, carbon tetrafluoride, etc., which is selected according to the type of photoresist, and is not limited here) into plasma by means of energy devices such as radio frequency power supply and microwave generator. During the generation process, the initial plasma density is ensured to be uniform by means of symmetrical electrode design and uniform gas inlet structure. The generated plasma is delivered to the reaction mechanism through a transmission channel (such as a pipeline with diffusion structure). During the transmission process, the gradient hole distribution (center sparse, edge dense) of the diffusion disc 330, the symmetrical flow field design (laminar flow state is maintained), and the magnetic field auxiliary constraint (reducing particle diffusion loss) are used to make the plasma uniformly distributed in the cross section of the cavity after entering the reaction mechanism, so as to ensure that the photoresist can be uniformly etched.

[0083] When etching, the vacuum pumping device is started synchronously or in advance to extract the gas inside the cavity through a plurality of uniformly distributed gas extraction holes (arranged in a triangle or matrix, without limitation on the specific arrangement) at the bottom or sidewall of the reaction mechanism, so as to control the pressure in the reaction mechanism within a preset range. The stable pressure environment can avoid the generation of density gradient of plasma due to local pressure fluctuation, and accelerate the discharge of etching by-products (such as carbon oxides and fluorides), thereby preventing the accumulation of by-products on the photoresist surface and affecting the reaction uniformity.

[0084] In the stable pressure field maintained by the vacuum pumping device, the plasma (active particles) in the reaction mechanism chemically reacts with or physically bombards the first photoresist on the surface of the wafer to be processed, thereby achieving the thinning of the photoresist. Since the plasma is uniformly distributed, and the vacuum pumping device extracts gas by partition, different gas extraction powers are used to further compensate for etching differences, so as to ensure that the first photoresist is uniformly etched to obtain a thinned second photoresist. The flatness of the second photoresist obtained by etching is greater than the preset flatness, and the flatness is good, which is convenient for subsequent line production.

[0085] The vacuum pumping device is composed of multiple-stage vacuum pumps, which can continuously pump the photoresist etching device to maintain a high vacuum environment inside the photoresist etching device, improve the efficiency and quality of the photoresist etching device, and ensure the uniformity of the etching and the thinning effect by pumping the plasma to uniformly etch the photoresist. The vacuum pumping device is also equipped with a high-precision vacuum degree sensor, which can monitor the vacuum degree inside the photoresist etching device in real time, and automatically adjust the working state of the vacuum pump according to the process requirements to ensure that the vacuum degree is stable within the set range.

[0086] In some optional embodiments, the moving of the wafer to be processed from the loading position 110 to the reaction mechanism by the loading and unloading module includes:

[0087] S110, controlling the first loading and unloading mechanism 100 to move the wafer to be processed from the loading position 110 to the wafer placing unit 220;

[0088] S120, obtaining the inscribed circle between all the photoresist etching devices and the wafer placing unit 220;

[0089] S130, in the case that the first moving part 243 and the second moving part 253 move the wafer to be processed out of the wafer placing unit 220, controlling the first moving part 243 and the second moving part 253 to be located in the target area covered by the inscribed circle;

[0090] S140, control the first end of the first rotating arm 240 to rotate relative to the first area of the rotating base 231, and control the first end of the fourth rotating arm 250 to rotate relative to the second area of the rotating base 231, so that the first transferring member 243 and the second transferring member 253 rotate in the target area and then transfer the wafer to be processed to the reaction mechanism.

[0091] Specifically, with reference to Figure 4 and Figure 5 When loading, the first loading and unloading mechanism 100 completes the preliminary transfer. The first loading and unloading mechanism 100 (through the loading and unloading robot 130) grabs the wafer to be processed from the initial loading position 110 and transfers the wafer to be processed to the wafer placing unit 220 (with a positioning groove or a vacuum adsorption function to ensure stable wafer placement). Get the incircle between all photoresist etching devices and the wafer placing unit 220. The "incircle" here refers to a maximum circular area calculated in the device layout, taking the wafer placing unit 220 as the reference, and comprehensively considering the position distribution of all photoresist etching devices (multiple etching units 300, the specific number is not limited). The circle is completely contained in the gap space between the wafer placing unit 220 and each etching device, and does not overlap with any etching device. Its function is to define the "safe activity range" for the first transferring member 243 and the second transferring member 253, and to ensure that they do not collide with the etching device during the transfer process. When calculating, the parameters such as the shape size of each etching device and the distance from the wafer placing unit 220 are combined to determine the center and radius of the incircle through geometric modeling.

[0092] During the process of the first transferring member 243 and the second transferring member 253 taking out the wafer to be processed from the wafer placing unit 220, the initial positions of the two are strictly controlled. When the first and second loading and unloading assemblies of the wafer taking and placing unit are started, the first transferring member 243 (the end of the third rotating arm 242) and the second transferring member 253 (the end of the sixth rotating arm 252) approach the wafer placing unit 220 and grab the wafer, the system will monitor the coordinates of the two in real time through the position sensor on the rotating arm, to ensure that they are completely within the "target area" covered by the above-mentioned incircle, that is, any part of the first transferring member 243 and the second transferring member 253 does not exceed the boundary of the incircle.

[0093] The final transferring is completed by the coordinated rotation of the rotating arms. The first rotating arm 240 of the first loading and unloading assembly (the first end of which is connected with the first area of the rotating base 231) and the fourth rotating arm 250 of the second loading and unloading assembly (the first end of which is connected with the second area of the rotating base 231) are respectively rotated: the first rotating arm 240 drives the first transferring member 243, and the fourth rotating arm 250 drives the second transferring member 253, and the angles are synchronously adjusted in the target area (for example, the first rotating arm 240 is rotated clockwise by 45 degrees, and the fourth rotating arm 250 is rotated counterclockwise by 45 degrees), and through the multi-joint linkage (the first rotating arm 240 to the third rotating arm 242, and the fourth rotating arm 250 to the sixth rotating arm 252 are coordinately stretched or contracted), the two transferring members stably transfer the wafer to be processed from the wafer placing unit 220 to the workbench (such as the bearing table of the reaction mechanism) of the target reaction mechanism within the range of the inscribed circle without exceeding the range of the inscribed circle. During the whole rotating process, the system real-time checks the position coordinates of the transferring members, ensures that the transferring members always move in the target area, and finally accurately places the wafer to be processed at the specified position of the reaction mechanism, and completes the loading. The target wafer can also be transferred to the cooling table 210 by the same transferring mode during unloading, which is not described herein.

[0094] In some optional embodiments, the generating mechanism includes an ionizer 310, an accelerator 320 and a diffusion disc 330; and the control of the generating mechanism to uniformly deliver the generated plasma to the reaction mechanism includes:

[0095] S210, generating a plasma with uniform concentration by the ionizer 310, and delivering the plasma to the accelerator 320;

[0096] S220, accelerating the plasma to a preset speed by the accelerator 320 and then delivering the plasma to the diffusion disc 330;

[0097] S230, uniformly diffusing the plasma to the reaction mechanism by the diffusion disc 330.

[0098] Specifically, referring to Figure 6The ionizer 310 is connected to a specific reaction gas (such as oxygen, carbon tetrafluoride, etc., selected according to the type of photoresist), and uses radio frequency power or microwave energy to excite the gas molecules to form a plasma containing a large number of active ions, electrons and free radicals. To ensure uniformity of the initial generated plasma concentration, the ionizer 310 uses a symmetrical electrode structure and uniform gas inlet method, for example, the reaction gas is uniformly introduced into the ionization cavity through a ring-shaped gas inlet, and the radio frequency energy is uniformly distributed on the electrode surface, avoiding the aggregation of plasma caused by excessive local electric field. The generated plasma is transported to the accelerator 320 through the connection channel between the ionizer 310 and the accelerator 320. During the transportation process, the smooth treatment of the inner wall of the pipeline reduces the collision loss of the plasma with the wall surface, and maintains the uniformity of its concentration.

[0099] The accelerator 320 is provided with an acceleration electric field composed of a plurality of electrodes. When the plasma enters the accelerator 320, the charged particles (such as positive ions) are accelerated under the action of the electric field force, so that the overall motion speed reaches a preset value (the speed is set according to the distance between the reaction mechanism and the generation mechanism, the plasma lifetime and other parameters, and needs to ensure that the plasma still maintains high activity when it reaches the reaction mechanism). During the acceleration process, the uniformity of the electric field strength is controlled to ensure that the particles in each region of the plasma obtain the same acceleration, avoiding the concentration distribution deviation caused by uneven acceleration. The accelerated plasma enters the diffusion disc 330 through the outlet of the accelerator 320.

[0100] The diffusion disc 330 is located between the accelerator 320 and the reaction mechanism, and its surface is distributed with a specially designed microporous structure. When the high-speed flowing plasma enters the diffusion disc 330, it will be divided and diffused through these micropores. The micropores of the diffusion disc 330 are designed in a gradient distribution, for example, the central region has smaller aperture and lower density, and the edge region has larger aperture and higher density. This design can compensate for the resistance difference of the plasma in the diffusion process due to the different path lengths. At the same time, the shape of the micropore is conical (narrow at the inlet end and wide at the outlet end), which can reduce the turbulence of the plasma flow and make the plasma enter the reaction mechanism in a laminar state. Through the action of the diffusion disc 330, the originally concentrated flowing plasma is dispersed into uniform gas flow, forming a plasma environment with wide coverage and consistent concentration distribution in the reaction mechanism.

[0101] In some optional embodiments, the diffusion disc 330 uniformly diffuses the plasma to the reaction mechanism, including:

[0102] S231, obtain a diffusion resistance map of the diffusion disc 330, the diffusion resistance map indicating the molecular diffusion resistance of each region on the diffusion disc 330;

[0103] S232, obtain the ion type of the plasma and the ion velocity when reaching the diffusion disc 330;

[0104] S233, determine the first aperture of the center region on the diffusion disc 330 according to the ion type and a first preset relationship table, the first aperture representing the diameter of the first diffusion hole 331 on the center region, the center region matching the ion output port 321 of the accelerator 320, the first preset relationship table indicating the relationship between the ion type and the first aperture;

[0105] S234, determine the first density of the center region on the diffusion disc 330 according to the ion velocity and a second preset relationship table, the first density representing the setting density of the first diffusion hole 331;

[0106] S235, set the second aperture and the second density of the second diffusion hole 332 according to the diffusion resistance map, the first density and the first aperture, the second diffusion hole 332 being arranged around the center region, the second density representing the setting density of the second diffusion hole 332;

[0107] S236, uniformly diffuse the plasma through the first diffusion hole 331 and the second diffusion hole 332 to the reaction mechanism.

[0108] Specifically, the diffusion resistance map is a "resistance distribution map" representing the difference in molecular diffusion resistance of different regions of the diffusion disc 330, which is generated based on the geometric structure of the diffusion disc 330 (such as the thickness of different regions, the distance from the reaction mechanism) and the motion characteristics of gas molecules. The diffusion resistance map is obtained through preliminary experiments or fluid simulation and contains the molecular diffusion resistance value of each small region on the diffusion disc 330. For example, the center region of the diffusion disc 330 (close to the ion output port 321 of the accelerator 320) has a low molecular diffusion resistance value due to a short diffusion path and small solid resistance; the edge region has a high molecular diffusion resistance value due to a long path and close proximity to the device cavity wall, resulting in large solid resistance.

[0109] Ion type: the type of active ions in the plasma, different ions have different molecular diameters, masses and electrical properties (such as fluorine ions with smaller diameters than trifluoromethyl positive ions), and there are differences in "flow resistance" when passing through the diffusion hole (large-diameter ions have greater resistance when passing through small holes).

[0110] Ion velocity: refers to the average movement speed of the plasma when reaching the diffusion disc 330, which is determined by the acceleration electric field intensity of the accelerator 320; the higher the speed, the more ions reaching the diffusion disc 330 per unit time, and the stronger the ability to pass through the diffusion hole.

[0111] The central region of the diffusion disc 330 is opposite to the ion output port 321 of the accelerator 320, and the parameters of the diffusion hole (the first diffusion hole 331) thereof need to be matched with the initial state of the plasma: the first aperture of the first diffusion hole 331 is determined by the ion type and the first preset relationship table. The first preset relationship table is a correspondence between the ion type and the minimum flow-through aperture established by experiments in advance. For example, for oxygen ions with a smaller diameter (about 0.3 nm), the first aperture can be set to 0.5-1 mm (to ensure smooth passage of ions and avoid “throttling effect” due to too small aperture); for trifluoromethyl positive ions with a larger diameter (about 0.5 nm), the first aperture needs to be increased to 1-1.5 mm (to reduce the collision resistance when large ions pass through).

[0112] The first density is the number of first diffusion holes 331 per unit area in the central region, which is determined by the ion velocity and the second preset relationship table. The second preset relationship table relates the ion velocity and the number of holes per unit area: the higher the ion velocity, the greater the amount of ions impacting the central region per unit time, and the stronger the ability to pass through the first diffusion hole 331. In the case of a required plasma density, a lower first density is needed to balance the plasma density passing through the first diffusion hole 331; when the velocity is lower, the first density is appropriately increased, thereby increasing the plasma density passing through the first diffusion hole 331.

[0113] The second diffusion hole 332 is distributed around the central region (covering the edge and the transition region of the diffusion disc 330), and the parameters thereof need to be designed for “resistance compensation” according to the diffusion resistance map and the parameters of the first diffusion hole 331, to balance the diffusion effects of the center and the edge: the diffusion resistance of the edge region is higher than that of the central region, so the second aperture needs to be larger than the first aperture (to reduce the flow-through resistance by increasing the aperture). The design of the second density needs to be coordinated with the second aperture to ensure that the passing ability of the edge region matches that of the central region. By reasonably setting the first diffusion hole 331 and the second diffusion hole 332, the “ion flux per unit area” of the entire region of the diffusion disc 330 is uniform, thereby uniformly diffusing the plasma to the reaction mechanism.

[0114] In some optional embodiments, the second aperture and the second density of the second diffusion hole 332 are set according to the diffusion resistance map, the first density, and the first aperture, including:

[0115] S2351、obtaining a second concentric circle of the second diffusion hole 332;

[0116] S2352, obtain a first concentric circle of the first diffusion hole 331, the first concentric circle and the second concentric circle share a same center;

[0117] S2353, obtain a diameter difference between the second concentric circle and the first concentric circle;

[0118] S2354, set the second pore diameter according to the diameter difference and the first pore diameter;

[0119] S2355, determine an ion diffusion coefficient according to the diffusion resistance map, the first pore diameter and the first density;

[0120] S2356, determine the second density according to the ion diffusion coefficient, the diffusion resistance map and the diameter difference.

[0121] Specifically, referring to Figure 7 , the center point of the center area is taken as the center, a plurality of first concentric circles with gradually increasing diameters are arranged in the center area, and a plurality of first diffusion holes 331 are uniformly arranged on the first concentric circles. According to specific setting requirements, a plurality of second concentric circles with gradually increasing diameters are arranged on the periphery of the first concentric circles, and a plurality of second diffusion holes 332 are uniformly arranged on the second concentric circles.

[0122] The diameter difference between the second concentric circle and the first concentric circle is calculated, specifically, the diameter difference between any second concentric circle and a first concentric circle at a preset position is calculated, and the first concentric circle at the preset position can be any first concentric circle arranged in the center area (such as the first concentric circle at the outermost periphery of the center area), which is not specifically limited here.

[0123] The diameter difference directly reflects the "diffusion path length difference" between the region where the second diffusion hole 332 is located and the center area; the diameter difference is greater, the longer the diffusion path of the region where the second diffusion hole 332 is located, and the greater the molecular diffusion resistance (the higher the resistance value in the resistance map of this region). In order to reduce the flow resistance, the second pore diameter needs to be greater than the first pore diameter, and is positively correlated with the pore diameter increment. For example, the basic relationship is set as: second pore diameter = first pore diameter + ( , which is a proportional coefficient, for example, ). If the first pore diameter is , , the second pore diameter , the pore diameter is increased to compensate for the resistance brought by the path length increase.

[0124] The diffusion coefficient is inversely proportional to the diffusion resistance (the smaller the resistance, the easier the diffusion), and is proportional to the first pore diameter and the first density (the larger the pore diameter and the more the pores, the larger the total flow area, and the stronger the diffusion ability).

[0125] molecular diffusion resistance of the region where the second diffusion hole 332 is located greater than the molecular diffusion resistance of the central region , and the difference in diameter is greater, the higher the diffusion coefficient of the edge region is closer to the diffusion coefficient of the central region , the influence of resistance and distance is compensated by increasing the second density.

[0126] Set = , combined with the second aperture , the second density formula:

[0127] where, and are correction factors (a quantify the attenuation effect on diffusion).

[0128] In some alternative embodiments, the reaction mechanism reaction chamber and the reaction table 340, adsorption disc 350 and first lifting device 370 arranged in the reaction chamber, the adsorption disc 350 is fixedly arranged on the first lifting device 370, the reaction table 340 is fixedly arranged on the adsorption disc 350, the adsorption disc 350 is uniformly provided with a plurality of adsorption through holes 351 in the area outside the periphery of the reaction table 340, the vacuum pumping device comprises a plurality of vacuum pumping pipelines 360, the vacuum pumping pipeline 360 communicates with the reaction chamber; the control of the vacuum pumping device to the reaction mechanism carries out vacuumizing treatment, so that the target wafer is obtained after the first photoresist on the surface of the wafer to be processed is etched by plasma uniformity, comprising:

[0129] S310, the etching depth and etching time of the wafer to be processed are obtained, the etching depth represents the depth difference between the first photoresist and the second photoresist, and the etching time represents the time of etching the first photoresist by plasma;

[0130] S320, the ion density spectrum of the wafer to be processed is obtained, which indicates the plasma density and plasma energy of each region on the surface of the first photoresist;

[0131] ​S330, control the pumping power of the plurality of vacuum pumping pipes 360 and the lifting height of the first lifting device 370 according to the ion density map, the etching depth and the etching time, so that after the plurality of vacuum pumping pipes 360 are vacuumized through the adsorption through holes 351, the plasma uniformly etches the first photoresist to obtain the target wafer.

[0132] Specifically, the etching depth is the thickness difference between the first photoresist (before etching) and the second photoresist (after etching); the etching time is the time length for completing the etching depth. The ion density map is a two-dimensional map formed by collecting the plasma distribution data of the surface of the wafer to be processed in the reaction chamber in real time through an optical diagnostic device (such as an emission spectrometer, an ion probe). Each pixel point in the ion density map contains: plasma density (number of active ions per unit volume) and plasma energy (average kinetic energy of ions). The plasma density and the plasma energy jointly determine the local etching rate: the higher the density and the greater the energy, the faster the etching rate.

[0133] Referring to Figure 6 and Figure 8 , the plurality of vacuum pumping pipes 360 (corresponding to the adsorption through holes 351 on the periphery of the adsorption disc 350, distributed in a ring shape, and different vacuum pumping pipes 360 correspond to different areas of the adsorption through holes 351) of the vacuum pumping device adjust the pumping power to change the local pressure and gas flow in the reaction chamber, and then adjust the plasma density and energy. For example, for the area where the etching is too fast (such as the first area of the photoresist), the pumping power of the corresponding vacuum pumping pipe 360 is increased, so that the gas extraction rate of the vacuum pumping pipe 360 through the adsorption through hole 351 is accelerated, the plasma in this area is extracted faster, the residence time and collision frequency of ions on the wafer surface are reduced, and the local etching rate is reduced; for the area where the etching is too slow (such as the second area of the photoresist): the pumping power of the corresponding area of the vacuum pumping pipe 360 is reduced, so that the gas extraction is slowed down, the residence time of the plasma in this area is prolonged, the ion density and collision probability are increased, and the local etching rate is improved.

[0134] According to the rate difference ratio of each area in the ion density map, the power of each pipe is dynamically allocated to ensure that the etching rate deviation of each area after correction is less than the deviation threshold, and the uniformity of photoresist etching is improved.

[0135] The first lifting device 370 adjusts the vertical distance between the wafer to be processed and the plasma source (diffusion disc 330) by changing the height of the adsorption disc 350, thereby indirectly affecting the density and energy of the plasma reaching the surface of the wafer to be processed. If the ion density map shows that the overall plasma density is low (the overall etching rate is slow), the first lifting device 370 is controlled to raise the adsorption disc 350, thereby shortening the distance between the wafer and the plasma source, reducing the attenuation of the plasma in transmission, and increasing the overall ion density and etching rate. If the etching is still slow in the local area (such as the edge) after being adjusted by vacuum pumping, the overall height can be slightly raised, and the vacuum pumping power of the edge can be reduced at the same time, thereby doubling the ion density in the edge area; on the contrary, if the center area is still fast, the overall height can be reduced, and the center vacuum pumping power can be increased at the same time, thereby reducing the etching rate in the center area. As the etching time elapses, the thickness of the photoresist gradually decreases, and the reaction efficiency of the ions and the photoresist changes (for example, the thinner the remaining photoresist, the more sensitive the reaction), so the height needs to be dynamically adjusted to maintain a stable etching rate.

[0136] The vacuum pumping pipeline 360 forms a "local flow field adjustment" through the adsorption through hole 351, and specifically corrects the plasma density difference in each area; the lifting device adjusts the overall transmission efficiency of the plasma through "distance adjustment", and cooperates with the local correction; the two work together to make the plasma density and energy in each area of the wafer surface consistent, so as to ensure that the first photoresist is uniformly etched to the target depth within the preset etching time, and the surface flatness of the second photoresist formed finally is greater than the preset flatness, thereby obtaining a qualified target wafer.

[0137] In some optional embodiments, the feeding and discharging module includes a first feeding and discharging mechanism 100 and a second feeding and discharging mechanism 200, the second feeding and discharging mechanism 200 includes a wafer placing unit 220, a wafer cooling unit, and a wafer taking and placing unit, and the wafer cooling unit includes a cooling table 210, a cooling pipeline 211, and a cooling machine 212.

[0138] S410, controlling the wafer taking and placing unit to move the target wafer from the reaction mechanism to the cooling table 210;

[0139] S420, obtaining a preset cooling time and a target temperature of the target wafer, the target temperature representing a first temperature before the target wafer starts to cool and a second temperature after the target wafer stops cooling;

[0140] S430, controlling the cooling power of the cooling machine 212 according to the preset cooling time and the target temperature, so that the cooling machine 212 cools the target wafer on the cooling table 210 through the cooling pipeline 211;

[0141] S440, control the first feeding and discharging mechanism 100 to move the target wafer after cooling from the cooling table 210 to the discharging position 120.

[0142] Specifically, with reference to Figure 4 and Figure 5 After the target wafer is obtained by thinning the photoresist, the wafer picking and placing unit in the second feeding and discharging mechanism 200 is controlled to act. The wafer picking and placing unit takes out the target wafer after etching from the reaction mechanism. The target wafer is at a high temperature due to the etching process, and direct movement may cause temperature-related damage. During the picking and placing process, the mechanical arm moves smoothly to ensure the stability of the wafer posture, and then the target wafer is accurately placed on the cooling table 210 of the wafer cooling unit. Then, the system obtains a preset cooling time and a target temperature of the target wafer. The preset cooling time is a fixed cooling time set according to the wafer material, size and subsequent process requirements; the target temperature includes two key parameters, one is the first temperature before the target wafer starts to cool (i.e. the real-time temperature when it is taken out from the reaction mechanism, which can be detected by an infrared temperature detector), and the other is the second temperature that needs to be reached after cooling (usually close to room temperature or a specific temperature required by the subsequent process, such as 25-30℃, and the specific temperature is not limited).

[0143] The cooling power of the cooling machine 212 is calculated and controlled according to the preset cooling time and the target temperature. The cooling machine 212 is connected to the cooling table 210 through the cooling pipeline 211, and cooling liquid (such as cooling water or special cooling medium) flows in the cooling pipeline 211. The system automatically adjusts the output power of the cooling machine 212 (such as adjusting the flow and temperature of the cooling liquid) according to the difference between the first temperature and the second temperature, the preset cooling time, and the heat conduction efficiency of the cooling table 210, so that the cooling machine 212 transmits cold energy to the cooling table 210 through the cooling pipeline 211, and then the cooling table 210 uniformly conducts the cold energy to the target wafer, achieving precise cooling.

[0144] Finally, when the target wafer is cooled to the second temperature (i.e. cooling is completed), the first feeding and discharging mechanism 100 is controlled to act. The first feeding and discharging mechanism 100 (with a high-precision feeding and discharging mechanical arm 130) smoothly takes the target wafer from the cooling table 210 and moves it to the discharging position 120 (such as a discharging carrier table or a wafer storage box) through a preset path, completing the entire discharging process. Through the cooling of the cooling table 210, it is ensured that the temperature of the target wafer meets the requirements of the subsequent processing, avoiding problems such as wafer deformation and changes in photoresist performance caused by high temperature.

[0145] In some optional embodiments, the wafer pick-and-place unit comprises a rotating base 231, a second lifting device 230, a first loading and unloading assembly, and a second loading and unloading assembly. The rotating base 231 is fixedly arranged on the second lifting device 230. The first loading and unloading assembly and the second loading and unloading assembly are oppositely arranged and are both rotationally connected with the rotating base 231. The first loading and unloading assembly comprises a first rotating arm 240, a second rotating arm 241, and a third rotating arm 242. A first end of the first rotating arm 240 is rotationally connected with a first region of the rotating base 231. A second end of the first rotating arm 240 is rotationally connected with a first end of the second rotating arm 241. A second end of the second rotating arm 241 is rotationally connected with a first end of the third rotating arm 242. A second end of the third rotating arm 242 is fixedly connected with a first transferring member 243. The second loading and unloading assembly comprises a fourth rotating arm 250, a fifth rotating arm 251, and a sixth rotating arm 252. A first end of the fourth rotating arm 250 is rotationally connected with a second region of the rotating base 231. A second end of the fourth rotating arm 250 is rotationally connected with a first end of the fifth rotating arm 251. A second end of the fifth rotating arm 251 is rotationally connected with a first end of the sixth rotating arm 252. A second end of the third rotating arm 242 is fixedly connected with a second transferring member 253. The control of the wafer pick-and-place unit to transfer the target wafer from the reaction mechanism to the cooling table 210 comprises:

[0146] S411, acquiring first position information of the target wafer;

[0147] S412, acquiring second position information of the first transferring member 243 and / or the second transferring member 253;

[0148] S413, generating, according to the first position information, the second position information, and cooling position information of the cooling table 210, a first rotation time sequence graph of the first end of the first rotating arm 240 relative to the first region of the rotating base 231, a second rotation time sequence graph of the first end of the second rotating arm 241 relative to the second end of the first rotating arm 240, and / or a third rotation time sequence graph of the first end of the third rotating arm 242 relative to the second end of the second rotating arm 241;

[0149] S414, generating a fourth rotation timing pattern of the first end of the fourth rotating arm 250 relative to the second area of the rotating base 231, a fifth rotation timing pattern of the first end of the fifth rotating arm 251 relative to the second end of the fourth rotating arm 250, and a sixth rotation timing pattern of the first end of the sixth rotating arm 252 relative to the second end of the fifth rotating arm 251 according to the first position information, the second position information, and the cooling position information of the cooling table 210;

[0150] S415, controlling the first end of the first rotating arm 240 relative to the first area of the rotating base 231 according to the first rotation timing pattern, controlling the first end of the second rotating arm 241 relative to the second end of the first rotating arm 240 according to the second rotation timing pattern, and controlling the first end of the third rotating arm 242 relative to the second end of the second rotating arm 241 according to the third rotation timing pattern, so that the first transferring member 243 transfers the target wafer to the cooling table 210; and / or

[0151] S416, controlling the first end of the fourth rotating arm 250 relative to the second area of the rotating base 231 according to the fourth rotation timing pattern, controlling the first end of the fifth rotating arm 251 relative to the second end of the fourth rotating arm 250 according to the fifth rotation timing pattern, and controlling the first end of the sixth rotating arm 252 relative to the second end of the fifth rotating arm 251 according to the sixth rotation timing pattern, so that the second transferring member 253 transfers the target wafer to the cooling table 210.

[0152] Specifically, the present application obtains the specific coordinates of the target wafer in the reaction mechanism through the position sensor (such as a laser positioner or a vision camera) in the reaction mechanism, i.e. the initial position (first position information) of the target wafer. The current position coordinates of the first transferring member 243 (the end of the first loading and unloading assembly) and / or the second transferring member 253 (the end of the second loading and unloading assembly) are collected in real time through the encoders (such as angle sensors) on the rotating base 231 and the rotating arms, to determine the initial standby position (second position information) thereof. The cooling position information of the surface of the cooling table 210 for placing the wafer, i.e. the cooling position of the target wafer, is obtained.

[0153] In generating the timing atlas, the first position information, the second position information and the cooling position information are input into a preset generation model. The pose transformation matrix of the first transfer member 243 is calculated through the generation model, so as to solve the rotation angle of each joint corresponding to the pose transformation matrix through inverse kinematics, and the rotation angle is distributed to different time points, so that the joint rotation angle and time joint curve are obtained. After smoothing filtering processing is performed on the joint curve, the corresponding rotation timing atlas is obtained, that is, the first rotation timing atlas, the second rotation timing atlas and the third rotation timing atlas are obtained. The first end of the first rotating arm 240 is controlled to rotate relative to the first area of the rotating chassis 231 according to the first rotation timing atlas; the first end of the second rotating arm 241 is controlled to rotate relative to the second end of the first rotating arm 240 according to the second rotation timing atlas; and the first end of the third rotating arm 242 is controlled to rotate relative to the second end of the second rotating arm 241 according to the third rotation timing atlas, so as to transfer the target wafer to the cooling table 210.

[0154] The rotation timing graph generation logic of the second loading and unloading assembly is consistent with that of the first loading and unloading assembly, and fourth, fifth and sixth rotation timing atlases are generated for the fourth, fifth and sixth rotating arms 252 respectively: the fourth rotating arm 250 rotates relative to the second area of the rotating chassis 231 to determine the overall motion direction; the fifth rotating arm 251 rotates relative to the fourth rotating arm 250 to adjust the extension distance of the second transfer member 253; and the sixth rotating arm 252 rotates relative to the fifth rotating arm 251 to fine-tune the attitude of the second transfer member 253 to adapt to the wafer grabbing and placing requirements.

[0155] The actions of the rotating arms of the first loading and unloading assembly and the second loading and unloading assembly are strictly synchronized, ensuring that the motion trajectory of the first transfer member 243 and / or the second transfer member 253 is a continuous and smooth curve (avoiding wafer shaking caused by broken-line motion) and there is no collision interference throughout the process.

[0156] According to the first rotation timing atlas, the first end of the first rotating arm 240 is controlled to rotate relative to the first area of the rotating chassis 231, driving the entire first loading and unloading assembly to rotate towards the reaction mechanism; simultaneously according to the second rotation timing atlas, the second rotating arm 241 is controlled to rotate relative to the first rotating arm 240, so that the first transfer member 243 gradually approaches the target wafer; simultaneously according to the third rotation timing atlas, the third rotating arm 242 is controlled to rotate, adjusting the attitude of the first transfer member 243, so that it is completely attached to the wafer surface and then vacuum adsorption is started (to grab the wafer); after the grabbing is completed, the rotating arms act according to the reverse timing atlas (the first rotating arm 240 reversely rotates, and the second and third rotating arms 242 are synchronously retracted), driving the target wafer to move from the reaction mechanism to above the cooling table 210, and then through fine-tuning of the angles of the rotating arms, the wafer is accurately placed at the cooling position.

[0157] When the second transfer member 253 needs to transfer the target wafer, the fourth, fifth and sixth rotation timing diagrams are used to control the fourth rotating arm 250 to rotate relative to the second area of the rotating base 231, the fifth rotating arm 251 to rotate relative to the fourth rotating arm 250, and the sixth rotating arm 252 to rotate relative to the fifth rotating arm 251, so that the second transfer member 253 completes the action of grabbing the target wafer from the reaction mechanism and transferring to the cooling table 210. The first and second transfer members can synchronously transfer the target wafer or separately transfer the target wafer, which is determined according to the number of target wafers and the setting position of the reaction mechanism, and is not limited herein.

[0158] Since the first and second feeding and discharging assemblies are arranged on the rotating base 231, the height of the rotating base 231 can be adjusted by the second lifting device 230 (for example, the height is lowered when grabbing and the height is raised to avoid obstacles when transferring), and the two assemblies can alternately work (for example, the first transfer member 243 transfers while the second transfer member 253 is on standby for the next grabbing) or synchronously work, thereby improving the transfer efficiency.

[0159] The embodiment of the present application has the following beneficial effects: when performing photoresist thinning, the wafer to be processed is transferred from the feeding position 110 to the reaction mechanism by the feeding and discharging module; the generated plasma is uniformly delivered to the reaction mechanism by the generating mechanism, so that the plasma is uniformly distributed in the reaction mechanism; the reaction mechanism is vacuumized by the vacuumizing device, so that the target wafer is obtained after the first photoresist on the surface of the wafer to be processed is uniformly etched by the plasma, the flatness of the second photoresist on the surface of the target wafer is greater than the preset flatness, and the second photoresist is obtained by etching the first photoresist; and the target wafer is transferred from the reaction mechanism to the discharging position 120 by the feeding and discharging module. In the technical solution of the embodiment, the generated plasma is uniformly delivered to the reaction mechanism by the generating mechanism, and the reaction mechanism is vacuumized by the vacuumizing device at the same time, so that the first photoresist on the surface of the wafer to be processed is uniformly etched by the plasma, the photoresist thinning of the wafer can be completed according to the demand, and the thinning efficiency is high and the cost is low.

[0160] In addition, an embodiment of the present application provides a photoresist thinning device, which comprises a memory, a processor and a computer program stored in the memory and capable of running on the processor.

[0161] The processor and the memory can be connected by a bus or other means.

[0162] It should be noted that the computer in the embodiment can correspond to the memory and the processor in the embodiment as shown in the drawings, which can constitute Figure 1 Figure 1 ​Part of the system architecture platform in the illustrated embodiment, both belong to the same inventive concept, so both have the same implementation principle and beneficial effects, which are not described in detail here.

[0163] The non-transitory software programs and instructions required to implement the uplink co-frequency interference cancellation method of the above embodiments are stored in the memory, and when executed by the processor, the photoresist thinning method of the above embodiments is executed, for example, the method steps S100 to S400 in the above description are executed. Figure 2

[0164] In addition, one embodiment of the present application also provides a computer readable storage medium, which stores computer executable instructions, when the computer executable instructions are used to execute the photoresist thinning method of the above photoresist thinning device, for example, the method steps S100 to S400 in the above description are executed. Figure 2

[0165] Those of ordinary skill in the art can understand that all or some steps in the above disclosed method, system can be implemented as software, firmware, hardware and their appropriate combinations. Some physical components or all physical components can be implemented as software executed by a processor such as a central processor, a digital signal processor or a microprocessor, or as hardware, or as an integrated circuit such as an application specific integrated circuit. Such software can be distributed on a computer readable medium, which can include computer storage media (or non-transitory media) and communication media (or transitory media). As known to those of ordinary skill in the art, the term computer storage media includes volatile and non-volatile, removable and non-removable media implemented in any method or technology for storing information such as computer readable instructions, data structures, program modules or other data. Computer storage media includes, but is not limited to, RAM, ROM, EEPROM, flash memory or other memory technology, CD-ROM, digital versatile disk (DVD) or other optical disk storage, magnetic cassettes, magnetic tapes, magnetic disk storage or other magnetic storage devices, or any other medium that can be used to store desired information and can be accessed by a computer. In addition, as known to those of ordinary skill in the art, communication media generally includes computer readable instructions, data structures, program modules or other data in a modulated data signal such as a carrier wave or other transmission mechanism, and can include any information delivery medium.

[0166] The above is a specific description of the preferred embodiment of the present application, but the present application is not limited to the above embodiments, and those skilled in the art can make various equivalent modifications or replacements without departing from the spirit of the present application. These equivalent modifications or replacements are all included in the scope defined by the claims of the present application.​​

Claims

1. A photoresist thinning method, characterized by, The application is applied to a photoresist thinning device, which comprises a feeding and discharging module and an etching module, the etching module comprises at least one etching unit, the etching unit comprises a photoresist etching device and a vacuum pumping device, the photoresist etching device comprises a generating mechanism and a reaction mechanism, the generating mechanism comprises an ionizer, an accelerator and a diffusion disc, and the photoresist thinning method comprises: moving a wafer to be processed from a feeding position to the reaction mechanism through the feeding and discharging module; controlling the generating mechanism to uniformly deliver generated plasma to the reaction mechanism, so that the plasma is uniformly distributed in the reaction mechanism; specifically comprising: generating plasma with uniform concentration through the ionizer, and delivering the plasma to the accelerator; accelerating the plasma to a preset speed through the accelerator and then delivering the plasma to the diffusion disc; uniformly diffusing the plasma to the reaction mechanism through the diffusion disc; the diffusion disc comprises: obtaining a diffusion resistance map of the diffusion disc, the diffusion resistance map indicating the molecular diffusion resistance of each region on the diffusion disc; obtaining the ion type of the plasma and the ion speed when reaching the diffusion disc; determining the first aperture of the center region on the diffusion disc according to the ion type and a first preset relationship table, the first aperture representing the diameter of the first diffusion hole on the center region, the center region matching the ion output port of the accelerator, and the first preset relationship table indicating the relationship between the ion type and the first aperture; determining the first density of the center region on the diffusion disc according to the ion speed and a second preset relationship table, the first density representing the setting density of the first diffusion hole; setting the second aperture and the second density of the second diffusion hole according to the diffusion resistance map, the first density and the first aperture, the second diffusion hole being arranged around the center region, and the second density representing the setting density of the second diffusion hole; uniformly diffusing the plasma to the reaction mechanism through the first diffusion hole and the second diffusion hole; controlling the vacuum pumping device to perform vacuum pumping treatment on the reaction mechanism, so that the target wafer is obtained after the first photoresist on the surface of the wafer to be processed is uniformly etched by the plasma, the flatness of the second photoresist on the surface of the target wafer is greater than a preset flatness, and the second photoresist is obtained by etching the first photoresist; moving the target wafer from the reaction mechanism to a discharging position through the feeding and discharging module.

2. The photoresist thinning method according to claim 1, wherein the second aperture and the second density of the second diffusion hole are set according to the diffusion resistance map, the first density and the first aperture, comprising: obtaining a second concentric circle of the second diffusion hole; obtaining a first concentric circle of the first diffusion hole, the first concentric circle and the second concentric circle sharing a same center; obtaining a diameter difference between the second concentric circle and the first concentric circle; setting the second aperture according to the diameter difference and the first aperture; determining an ion diffusion coefficient according to the diffusion resistance map, the first aperture and the first density; The second density is determined according to the ion diffusion coefficient, the diffusion resistance map and the diameter difference.

3. The photoresist thinning method of claim 1, wherein The reaction mechanism comprises a reaction chamber, a reaction table, an adsorption disc and a first lifting device arranged in the reaction chamber, the adsorption disc is fixedly arranged on the first lifting device, the reaction table is fixedly arranged on the adsorption disc, a plurality of adsorption through holes are uniformly arranged on the adsorption disc in the area outside the periphery of the reaction table, the vacuumizing device comprises a plurality of vacuumizing pipelines, and the vacuumizing pipelines are communicated with the reaction chamber; the control of the vacuumizing device for vacuumizing treatment of the reaction mechanism so that the target wafer is obtained after the first photoresist on the surface of the wafer to be processed is uniformly etched by plasma, comprising: The etching depth and etching time of the wafer to be processed are obtained, the etching depth represents the depth difference between the first photoresist and the second photoresist, and the etching time represents the time for etching the first photoresist by plasma; An ion density map of the wafer to be processed is obtained, the ion density map indicates the plasma density and plasma energy of each region on the surface of the first photoresist; According to the ion density map, the etching depth and the etching time, the extraction power of the plurality of vacuumizing pipelines and the lifting height of the first lifting device are controlled, so that after the vacuumizing treatment of the plurality of vacuumizing pipelines through the adsorption through holes, the target wafer is obtained after the first photoresist is uniformly etched by plasma.

4. The photoresist thinning method of claim 1, wherein The feeding and discharging module comprises a first feeding and discharging mechanism and a second feeding and discharging mechanism, the second feeding and discharging mechanism comprises a wafer placing unit, a wafer cooling unit and a wafer taking and placing unit, the wafer cooling unit comprises a cooling table, a cooling pipeline and a cooling machine; the target wafer is transferred from the reaction mechanism to a discharging position by the feeding and discharging module, comprising: The wafer taking and placing unit is controlled to transfer the target wafer from the reaction mechanism to the cooling table; A preset cooling time and a target temperature of the target wafer are obtained, the target temperature represents a first temperature before the target wafer starts to cool and a second temperature after the target wafer finishes cooling; According to the preset cooling time and the target temperature, the cooling power of the cooling machine is controlled, so that the target wafer on the cooling table is cooled by the cooling machine through the cooling pipeline; The first feeding and discharging mechanism is controlled to transfer the target wafer after cooling from the cooling table to the discharging position.

5. The photoresist thinning method of claim 4, wherein The wafer taking and placing unit comprises a rotating base, a second lifting device, a first feeding and discharging assembly and a second feeding and discharging assembly, the rotating base is fixedly arranged on the second lifting device, the first feeding and discharging assembly and the second feeding and discharging assembly are oppositely arranged and are rotationally connected with the rotating base, the first feeding and discharging assembly comprises a first rotating arm, a second rotating arm and a third rotating arm, a first end of the first rotating arm is rotationally connected with a first region of the rotating base, a second end of the first rotating arm is rotationally connected with a first end of the second rotating arm, a second end of the second rotating arm is rotationally connected with a first end of the third rotating arm, and a second end of the third rotating arm is fixedly connected with a first moving member, the second feeding and discharging assembly comprises a fourth rotating arm, a fifth rotating arm and a sixth rotating arm, a first end of the fourth rotating arm is rotationally connected with a second region of the rotating base, a second end of the fourth rotating arm is rotationally connected with a first end of the fifth rotating arm, a second end of the fifth rotating arm is rotationally connected with a first end of the sixth rotating arm, and a second end of the sixth rotating arm is fixedly connected with a second moving member; and the control of the wafer taking and placing unit to move the target wafer from the reaction mechanism to the cooling table comprises: obtaining first position information of the target wafer; obtaining second position information of the first moving member and / or the second moving member; generating a first rotation time sequence graph of the first end of the first rotating arm relative to the first region of the rotating base, a second rotation time sequence graph of the first end of the second rotating arm relative to the second end of the first rotating arm, and / or a third rotation time sequence graph of the first end of the third rotating arm relative to the second end of the second rotating arm according to the first position information, the second position information and cooling position information of the cooling table; and / or generating a fourth rotation time sequence graph of the first end of the fourth rotating arm relative to the second region of the rotating base, a fifth rotation time sequence graph of the first end of the fifth rotating arm relative to the second end of the fourth rotating arm, and / or a sixth rotation time sequence graph of the first end of the sixth rotating arm relative to the second end of the fifth rotating arm according to the first position information, the second position information and the cooling position information of the cooling table; controlling the first end of the first rotating arm to rotate relative to the first region of the rotating base according to the first rotation time sequence graph, controlling the first end of the second rotating arm to rotate relative to the second end of the first rotating arm according to the second rotation time sequence graph, and / or controlling the first end of the third rotating arm to rotate relative to the second end of the second rotating arm according to the third rotation time sequence graph, so that the first moving member moves the target wafer to the cooling table; and / or According to the fourth rotation time sequence map, the first end of the fourth rotating arm is controlled to rotate relative to the second region of the rotating base; according to the fifth rotation time sequence map, the first end of the fifth rotating arm is controlled to rotate relative to the second end of the fourth rotating arm; and according to the sixth rotation time sequence map, the first end of the sixth rotating arm is controlled to rotate relative to the second end of the fifth rotating arm, so that the second transferring member transfers the target wafer to the cooling table.

6. The photoresist thinning method according to claim 5, wherein The transferring of the wafer to be processed from the wafer loading position to the reaction mechanism by the wafer loading and unloading module comprises: controlling the first wafer loading and unloading mechanism to transfer the wafer to be processed from the wafer loading position to the wafer placing unit; acquiring the inscribed circle between all the photoresist etching devices and the wafer placing unit; in the case that the first transferring member and the second transferring member transfer the wafer to be processed out of the wafer placing unit, controlling the first transferring member and the second transferring member to be located in a target region covered by the inscribed circle; controlling the first end of the first rotating arm to rotate relative to the first region of the rotating base and controlling the first end of the fourth rotating arm to rotate relative to the second region of the rotating base, so that the first transferring member and the second transferring member rotate in the target region and then transfer the wafer to be processed to the reaction mechanism.

7. A photoresist thinning apparatus, comprising: comprise: a memory, a processor, and a computer program stored in the memory and executable on the processor, and the processor executes the computer program to implement the photoresist thinning method of any one of claims 1-6.

8. A computer storage medium, characterized in that The computer storage medium stores computer executable instructions, and the computer executable instructions are used to execute the photoresist thinning method of any one of claims 1-6. The computer storage medium stores computer executable instructions, and the computer executable instructions are used to execute the photoresist thinning method of any one of claims 1-6.

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