Light-emitting device, light-emitting device and preparation method thereof

Abstract

The invention discloses a light-emitting device, a light-emitting device and a preparation method thereof, the light-emitting device comprises a metal circuit, a light-emitting chip and a packaging adhesive structure, one side of the metal circuit is provided with an external surface, and the light-emitting chip is electrically connected to the metal circuit and is arranged on one side, far away from the external surface, of the metal circuit. The packaging glue structure covers the light-emitting chip and the surface of the metal circuit except the external surface. The light-emitting device comprises the metal circuit, the light-emitting chip and the packaging adhesive structure, in other words, a substrate of the light-emitting device is omitted, the size of the light-emitting device can be remarkably reduced, and the light-emitting device meets the requirement for further miniaturization. In addition, due to the fact that the light-emitting device is simple in structure, the manufacturing process of the light-emitting device can be simple, high yield can be achieved easily, and the manufacturing cost of the light-emitting device is low.

Description

Technical Field

[0001] The present invention relates to the technical field of electronic devices, and in particular to a light-emitting device, a light-emitting apparatus and a preparation method thereof. Background Art

[0002] The light-emitting device in the related art usually includes a substrate, a metal circuit, a light-emitting chip and a packaging glue structure. The metal circuit is arranged on the substrate, the light-emitting chip is arranged on the metal circuit, and the packaging glue structure covers the light-emitting chip, the metal circuit and one side surface of the substrate.

[0003] To meet the increasing demand for miniaturization of light-emitting devices, related technologies generally reduce the size of light-emitting devices by manufacturing smaller light-emitting chips and thinner substrates. However, such a configuration still cannot meet the demand for further miniaturization of light-emitting devices. Summary of the Invention

[0004] A first object of the present invention is to provide a light emitting device capable of further reducing the size of the light emitting device.

[0005] The second object of the present invention is to provide a method for preparing a light-emitting device, which can manufacture a light-emitting device with a smaller size.

[0006] A third object of the present invention is to provide a light emitting device that can achieve a lighter and thinner design.

[0007] To achieve this object, the present invention adopts the following technical solutions:

[0008] In a first aspect, a light emitting device is provided, comprising:

[0009] a metal circuit, wherein one side of the metal circuit has an external surface;

[0010] a light-emitting chip, the light-emitting chip being electrically connected to the metal circuit and being disposed on a side of the metal circuit away from the external surface; and

[0011] A packaging adhesive structure covers the light-emitting chip and the surface of the metal circuit except the external surface.

[0012] As a preferred technical solution for the light-emitting device, the metal circuit includes a circuit body and a first metal column, the circuit body has the external surface, the circuit body includes a solder foot portion and a solid crystal portion that are electrically connected, the first metal column is arranged on a side of the solid crystal portion away from the external surface, and the light-emitting chip is arranged at an end of the first metal column away from the circuit body.

[0013] As a preferred technical solution of the light emitting device, the metal circuit further comprises a second metal column arranged on the side of the soldering leg away from the circumscribed surface, and the second metal column is spaced apart from the first metal column.

[0014] As a preferred technical solution of the light emitting device, the protruding height of the first metal column from the circumscribed surface is h1, the protruding height of the second metal column from the circumscribed surface is h2, and 0 μm < h2 ≤ h1 + 30 μm.

[0015] As a preferred technical solution of the light emitting device, the outer periphery of at least one metal column is provided with a protruding structure, and the protruding structure is at least partially spaced apart from the circuit body.

[0016] As a preferred technical solution of the light emitting device, the protruding structure has a clamping surface facing the circumscribed surface, and the clamping surface is parallel to the circumscribed surface, or the clamping surface is arranged at an angle with the circumscribed surface.

[0017] As a preferred technical solution of the light emitting device, at least the part of the surface of the metal circuit connected to the light emitting chip in addition to the circumscribed surface is provided with a first plating layer.

[0018] As a preferred technical solution of the light emitting device, the first plating layer has a thickness t1, and 2 μm ≤ t1 ≤ 80 μm.

[0019] As a preferred technical solution of the light emitting device, a solder structure is connected between the light emitting chip and the metal circuit.

[0020] As a preferred technical solution of the light emitting device, the circumscribed surface is covered with a second plating layer.

[0021] As a preferred technical solution of the light emitting device, the second plating layer has a thickness t2, and 1 μm ≤ t2 ≤ 1.5 μm.

[0022] As a preferred technical solution of the light emitting device, in the direction perpendicular to the circumscribed surface, the distance between the end of the encapsulation glue structure away from the circumscribed surface and the end of the light emitting chip away from the circumscribed surface is t3, and 0 μm < t3 ≤ 300 μm.

[0023] As a preferred technical solution of the light emitting device, the metal circuit comprises a plurality of pairs of die bonding portions and a plurality of soldering legs, each pair of the die bonding portions comprises a first die bonding portion and a second die bonding portion arranged in a spaced apart manner, and the plurality of soldering legs comprises a first soldering leg corresponding to the first die bonding portion and a second soldering leg corresponding to the second die bonding portion.

[0024] The first bonding part is electrically connected to the corresponding first solder foot part, the second bonding part is electrically connected to the corresponding second solder foot part, the light-emitting device includes a plurality of light-emitting chips, and the plurality of light-emitting chips correspond one-to-one to a plurality of groups of bonding parts, and the light-emitting chips are connected to the corresponding first bonding part and the second bonding part.

[0025] As a preferred technical solution of the light emitting device, at least two of the first die-bonding portions are electrically connected to the same corresponding first solder foot portion;

[0026] The plurality of second die-bonding portions correspond one-to-one to the plurality of second solder fillets.

[0027] In a second aspect, a method for preparing a light-emitting device is provided, comprising:

[0028] Step S1: providing a carrier board, and manufacturing a plurality of arrays of metal circuits on the carrier board;

[0029] Step S2: arranging a light-emitting chip on a side of each metal circuit facing away from the carrier board;

[0030] Step S3: using packaging glue to cover the metal circuit and the light-emitting chip on the carrier board;

[0031] Step S4, curing the packaging adhesive to form a packaging adhesive structure, causing at least a portion of the metal circuit and the carrier board to be offset in a direction parallel to the board surface of the carrier board and / or in a direction perpendicular to the board surface of the carrier board;

[0032] Step S5: peeling the packaging adhesive structure and the metal circuit off the carrier board as a whole;

[0033] Step S6: cutting the packaging adhesive structure to separate the metal circuits of the array to obtain a plurality of light-emitting devices.

[0034] As a preferred technical solution of the method for preparing the light-emitting device, step S1 includes:

[0035] Step S10: providing the carrier board, and manufacturing at least one array of the metal circuits and a plurality of cutting alignment lines on the carrier board, wherein the cutting alignment lines are located at the periphery of the corresponding group of the metal circuits as a whole, and the cutting alignment lines are arranged directly at the interval between two adjacent metal circuits or at the periphery edge of the group of the metal circuits as a whole;

[0036] The step S3 comprises:

[0037] Step S30: Use the packaging adhesive to cover at least a portion of the metal circuit, the light-emitting chip, and each of the cutting alignment lines on the carrier board.

[0038] As a preferred technical solution of the method for preparing the light-emitting device, the length direction of the cutting alignment line itself is parallel to the relative direction between the cutting alignment line and the corresponding group of metal lines, and the cutting alignment line has a length s1 and a width s2;

[0039] s2≤s1≤5*s2, and / or, 10μm≤s1≤2000μm, and / or, 10μm≤s2≤500μm.

[0040] As a preferred technical solution of the method for preparing the light-emitting device, step S10 includes:

[0041] Step S100: providing the carrier board, and manufacturing at least one array of circuit bodies and a plurality of cutting alignment lines on the carrier board, wherein the cutting alignment lines are located on the periphery of a corresponding group of circuit bodies, and the cutting alignment lines are arranged directly at the interval between two adjacent circuit bodies or at the periphery of a group of circuit bodies;

[0042] Step S101, plating a first metal column on the circuit body, and plating a third metal column on the cutting alignment line;

[0043] The step S30 further includes:

[0044] Step S300: Use the packaging adhesive to cover at least a portion of the metal circuit, the light-emitting chip, the third metal pillar, and each of the cutting alignment lines on the carrier board.

[0045] As a preferred technical solution of the method for preparing the light-emitting device, the height h1 of the first metal column and the height h3 of the third metal column satisfy: 0 μm<h3≤h1+30 μm.

[0046] As a preferred technical solution of the method for preparing the light-emitting device, after step S101, step S10 further includes:

[0047] Step S102: forming a protruding structure on at least one metal column.

[0048] As a preferred technical solution of the method for preparing the light-emitting device, step S10 includes:

[0049] Step S10a, providing the carrier plate, and manufacturing at least one array of the metal lines, a plurality of cutting alignment lines and a frame on the carrier plate, wherein the cutting alignment line is located at the outer periphery of the corresponding array of the metal lines as a whole, and the cutting alignment line is arranged opposite to the interval between the adjacent two metal lines or the outer periphery edge of the array of the metal lines as a whole, the frame interval corresponds to the outer periphery surrounding the array of the metal lines as a whole, and the frame is connected to all the cutting alignment lines of the corresponding array of the metal lines.

[0050] As a preferred technical solution of the preparation method of the light emitting device, after step S1 and before step S2, the preparation method of the light emitting device further comprises:

[0051] Step S2a, plating a first plating layer on the surface of the metal line at least for connecting to the light emitting chip.

[0052] As a preferred technical solution of the preparation method of the light emitting device, after step S1 and before step S2, the preparation method of the light emitting device further comprises:

[0053] Step S2b, using a silk screen steel mesh to screen print a solder on the surface of the metal line for connecting to the light emitting chip;

[0054] Wherein, the thickness value of the silk screen steel mesh is in the range of 10 μm to 25 μm.

[0055] The step S2 comprises:

[0056] Step S20, placing the light emitting chip on the solder;

[0057] Step S21, bonding the light emitting chip to the metal line through the solder.

[0058] As a preferred technical solution of the preparation method of the light emitting device, after step S5 and before step S6, the preparation method of the light emitting device further comprises:

[0059] Step S6a, plating a second plating layer on the surface of the metal line away from the light emitting chip.

[0060] Thirdly, a light emitting device is provided, comprising a circuit board and at least one light emitting device as described in the first aspect, and the outer surface of the light emitting device is electrically connected to the circuit board.

[0061] The present application has the following beneficial effects:

[0062] By making the light-emitting device include a metal circuit, a light-emitting chip and a packaging adhesive structure, in other words, by eliminating the substrate of the light-emitting device, the size of the light-emitting device can be significantly reduced, so that the light-emitting device can meet the demand for further miniaturization.

[0063] In addition, since the structure of the light-emitting device is simple, the manufacturing process of the light-emitting device can be simplified and a high yield can be easily achieved, so that the manufacturing cost of the light-emitting device is low. BRIEF DESCRIPTION OF THE DRAWINGS

[0064] The present invention will be described in further detail below with reference to the accompanying drawings and examples.

[0065] Figure 1 It is a schematic cross-sectional view of the structure of the light-emitting device (without protruding structure) described in the embodiment.

[0066] Figure 2 It is a schematic cross-sectional view of the structure of the light-emitting device (with a protruding structure) described in the embodiment.

[0067] Figure 3 for Figure 2 Schematic diagram of the structure of the metal circuit shown in.

[0068] Figure 4 This is a structural diagram of the first metal column and protruding structure of the embodiment.

[0069] Figure 5 Schematic diagram of the structure of the second metal column and protruding structure according to the embodiment.

[0070] Figure 6 Schematic diagram of the structure of the third metal column and protrusion structure described in the embodiment.

[0071] Figure 7 Schematic diagram of the structure of the fourth metal column and protrusion structure described in the embodiment.

[0072] Figure 8 Schematic diagram of the structure of the fifth metal column and protrusion structure described in the embodiment.

[0073] Figure 9 Schematic diagram of the structure of the sixth metal column and protrusion structure described in the embodiment.

[0074] Figure 10 It is a schematic structural diagram of the light emitting device according to the embodiment along the direction of looking directly at the circumscribed surface.

[0075] Figure 11 This is a structural diagram of the carrier board, metal circuit, cutting alignment line and frame described in the embodiment.

[0076] Figure 12 for Figure 11Enlarged schematic diagram of point M in the middle.

[0077] Figure 13 Schematic diagram of the structure of the cutting alignment line, the third metal pillar and the protruding structure according to the embodiment.

[0078] Figure 14 It is a schematic diagram of a part of the process of manufacturing the light-emitting device according to the embodiment.

[0079] Figure 15 This is another partial flow chart of the method for manufacturing a light-emitting device according to an embodiment.

[0080] Figure 16 Schematic diagram of the cross-sectional view of the structure of the light-emitting device described in the embodiment.

[0081] In the picture:

[0082] 100. Light-emitting device; 1. Metal circuit; 1a. External surface; 10. Circuit body; 101. Solder leg; 1011. First solder leg; 1012. Second solder leg; 102. Die-bonding unit; 1021. First die-bonding unit; 1022. Second die-bonding unit; 11. First metal pillar; 12. Second metal pillar; 13. Protrusion; 130. Snap-fit ​​surface; 2. Light-emitting chip; 3. Encapsulation adhesive structure; 4. First plating layer; 5. Second plating layer; 6. Solder structure;

[0083] 200, load-bearing plate;

[0084] 300, cutting alignment line; 300a, third metal pillar;

[0085] 400, border;

[0086] 500. Circuit board. DETAILED DESCRIPTION

[0087] To make the technical problems solved, the technical solutions adopted, and the technical effects achieved by the present invention more clearly understood, the technical solutions of the embodiments of the present invention will be further described in detail below with reference to the accompanying drawings. It is apparent that the described embodiments are only some of the embodiments of the present invention, not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort shall fall within the scope of protection of the present invention.

[0088] In the description of the present invention, unless otherwise expressly specified or limited, the terms "connected," "connected," and "fixed" should be understood in a broad sense. For example, they may refer to fixed connections, detachable connections, or integration; mechanical connections or electrical connections; direct connections or indirect connections through an intermediate medium; and internal communication between two components or interaction between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention in specific circumstances.

[0089] In the present invention, unless otherwise expressly specified or limited, a first feature being "above" or "below" a second feature may include the first and second features being in direct contact, or may include the first and second features being in contact not directly but through another feature between them. Furthermore, a first feature being "above," "above," and "above" a second feature may include the first feature being directly above or obliquely above the second feature, or may simply mean that the first feature is higher in level than the second feature. A first feature being "below," "below," and "below" a second feature may include the first feature being directly below or obliquely below the second feature, or may simply mean that the first feature is lower in level than the second feature.

[0090] like Figures 1 to 3 As shown, the present invention provides a light-emitting device 100, including a metal circuit 1, a light-emitting chip 2 and a packaging adhesive structure 3. One side of the metal circuit 1 has an external surface 1a. The light-emitting chip 2 is electrically connected to the metal circuit 1 and is arranged on a side of the metal circuit 1 away from the external surface 1a. The packaging adhesive structure 3 covers the light-emitting chip 2 and the surface of the metal circuit 1 other than the external surface 1a.

[0091] By making the light-emitting device 100 include the metal circuit 1, the light-emitting chip 2 and the packaging glue structure 3, in other words, by eliminating the substrate of the light-emitting device 100, the size of the light-emitting device 100 can be significantly reduced, so that the light-emitting device 100 can meet the demand for further miniaturization.

[0092] In addition, since the light emitting device 100 has a simple structure, the manufacturing process of the light emitting device 100 can be simplified, and a high yield rate can be easily achieved, so that the manufacturing cost of the light emitting device 100 is low.

[0093] Optionally, the metal circuit 1 includes a circuit body 10 and a first metal column 11, the circuit body 10 has an external surface 1a, the circuit body 10 includes an electrically connected solder foot portion 101 and a solid crystal portion 102, the first metal column 11 is arranged on a side of the solid crystal portion 102 away from the external surface 1a, and the light-emitting chip 2 is arranged at an end of the first metal column 11 away from the circuit body 10, so that the effective connection area between the metal circuit 1 and the packaging glue structure 3 can be increased by the first metal column 11, so as to improve the connection stability between the solid crystal portion 102 and the packaging glue structure 3, and further, during the manufacturing process of the light-emitting device 100, when the metal circuit 1 and the packaging glue structure 3 are peeled off from the carrier board 200, the possibility of the metal circuit 1 being pulled by the bonding force with the carrier board 200, thereby reducing the possibility of the solid crystal portion 102 and the packaging glue structure 3 being separated from the packaging glue structure 3, thereby reducing the possibility of failure of the electrical connection between the solid crystal portion 102 and the light-emitting chip 2 when the metal circuit 1 and the packaging glue structure 3 are peeled off from the carrier board 200.

[0094] Optionally, a solder structure 6 is connected between the light emitting chip 2 and the metal circuit 1 so that the light emitting chip 2 can be solidified to the metal circuit 1 through the solder structure 6, so that the connection between the light emitting chip 2 and the metal circuit 1 is more stable and the electrical conduction stability is also better.

[0095] Optionally, the metal circuit 1 also includes a second metal column 12 provided on the side of the solder foot 101 away from the external surface 1a, and the second metal column 12 is spaced apart from the first metal column 11, so that the effective connection area between the metal circuit 1 and the packaging glue structure 3 can be further increased by the second metal column 12, so as to improve the connection stability between the solder foot 101 and the packaging glue structure 3, and moreover, during the manufacturing process of the light-emitting device 100, when the metal circuit 1 and the packaging glue structure 3 are peeled off from the carrier board 200, the possibility of the metal circuit 1 being pulled by the bonding force with the carrier board 200, thereby causing the solder foot 101 to separate from the packaging glue structure 3, thereby reducing the possibility of the solder foot 101 causing the electrical connection between the solid crystal part 102 and the light-emitting chip 2 to fail when the metal circuit 1 and the packaging glue structure 3 are peeled off from the carrier board 200.

[0096] The protrusion height of the first metal column 11 protruding from the circumscribed surface 1a is h1. The larger the height h1, the larger the surface area of ​​the first metal column 11, and the better the connection stability between the die-bonding portion 102 and the packaging glue structure 3. However, the larger the size of the light-emitting device 100 along the direction of the height h1, the more disadvantageous it is for the light-emitting device 100 to achieve a more miniaturized design. Therefore, the height h1 cannot be too large. Based on this, optionally, the protrusion height h1 of the first metal column 11 protruding from the circumscribed surface 1a is It can satisfy the following: 0μm

[0097] The protrusion height of the second metal column 12 from the circumscribed surface 1a is h2. The larger the height h2, the larger the outer surface area of ​​the second metal column 12, and the better the connection stability between the solder foot portion 101 and the packaging adhesive structure 3. However, the larger the size of the light-emitting device 100 along the height h2, the more disadvantageous it is for the light-emitting device 100 to achieve a more miniaturized design. Therefore, the height h2 cannot be too large. Based on this, optionally, the protrusion height h2 of the second metal column 12 from the circumscribed surface 1a can meet the following conditions: 0μm

[0098] In the process of setting the light-emitting chip 2 on the end of the first metal column 11 away from the circuit body 10, solder can usually be set on the end of the first metal column 11 away from the circuit body 10 by silk screen printing, and then the light-emitting chip 2 is fixed to the first metal column 11 by solder.

[0099] ​​It can be understood that when the height h2 of the second metal pillar 12 is less than the height h1 of the first metal pillar 11, the second metal pillar 12 is not likely to affect the process of setting the solder by silk screen printing. When the height h2 of the second metal pillar 12 is greater than the height h1 of the first metal pillar 11, the end of the second metal pillar 12 away from the circuit body 10 will resist the setting of the silk screen device, so that the thickness of the solder set by silk screen printing is greater than or equal to the height difference h2-h1 between the second metal pillar 12 and the first metal pillar 11. Figure 1 As shown, Figure 1 exemplarily shows the structure of a light emitting device 100 when the height h2 of the second metal pillar 12 is greater than the height h1 of the first metal pillar 11 .

[0100] Therefore, the height h2 of the second metal column 12 can be less than the height h1 of the first metal column 11, or the height h2 of the second metal column 12 can be greater than the height h1 of the first metal column 11, and the height difference h2-h1 between the second metal column 12 and the first metal column 11 cannot be too large, so as to avoid excessive solder screen-printed on the first metal column 11, resulting in excessive overflow of solder during the solidification process of the light-emitting chip 2, resulting in circuit short circuit and other problems. Based on this, optionally, the second metal column 12 The height h2 of the metal pillar 12 and the height h1 of the first metal pillar 11 may satisfy: 0μm

[0101] Optionally, a protruding structure 13 is provided on the periphery of at least one metal pillar, that is, a protruding structure 13 is provided on the periphery of at least one first metal pillar 11, or a protruding structure 13 is provided on the periphery of at least one second metal pillar 12, or a protruding structure 13 is provided on the periphery of at least one first metal pillar 11 and a protruding structure 13 is provided on the periphery of at least one second metal pillar 12, and the protruding structure 13 is at least partially spaced apart from the circuit body 10. Thus, on the one hand, the effective connection area between the entire metal circuit 1 and the packaging glue structure 3 can be further improved through the protruding structure 13. On the other hand, by providing the protruding structure 13 on the periphery of the metal pillar and spacing the protruding structure 13 from the circuit body 10, when the metal circuit 1 and the packaging glue structure 3 are peeled off from the carrier board 200, the protruding structure 13 can buckle the packaging glue structure 3 located between the protruding structure 13 and the circuit body 10, thereby significantly further improving the connection stability between the metal circuit 1 and the packaging glue structure 3.

[0102] ​Optionally, the convex structure 13 has a clamping surface 130 facing the outer surface 1a, the clamping surface 130 is parallel to the outer surface 1a, or the clamping surface 130 is arranged at an angle with the outer surface 1a, so that when the metal circuit 1 and the encapsulation glue structure 3 are peeled off from the carrier board 200, the clamping surface 130 can clasp the encapsulation glue structure 3 between the convex structure 13 and the circuit body 10, so as to significantly improve the connection stability of the metal circuit 1 and the encapsulation glue structure 3.

[0103] When the clamping surface 130 is arranged at an angle with the outer surface 1a, the clamping surface 130 can be inclined towards the outer peripheral surface of the metal column arranged away from the convex structure 13 or the outer peripheral surface of the metal column arranged away from the convex structure 13.

[0104] Furthermore, the clamping surface 130 can be a plane or a curved surface, and the side surface of the convex structure 13 away from the outer surface 1a can be flush with the end surface of the metal column away from the outer surface 1a, or the side surface of the convex structure 13 away from the outer surface 1a can be a bevel or a curved surface, as shown in Figures 4 to 6 , Figures 4 to 6 , Figure 4 , Figure 5 , Figure 6 , Figures 7 to 9 , Figures 7 to 9 , Figure 7 , Figure 8 , Figure 9 , ,

[0105] In other embodiments, the clamping surface 130 can also be a wavy surface, a jagged surface, or an irregular concave-convex surface.

[0106] Please refer to Figures 1 to 3Optionally, the first plating layer 4 is provided on at least a part of the surface of the metal circuit 1 except the surface 1a, so that the surface of the metal circuit 1 except the surface 1a is protected by the first plating layer 4 to prevent oxidation of the metal circuit 1 and improve the service life of the metal circuit 1.

[0107] When the metal circuit 1 includes the first metal pillar 11 connected to the light emitting chip 2 at an end away from the surface 1a as described in the foregoing technical solutions, it can be understood that the first plating layer 4 covers at least the end surface of the first metal pillar 11 away from the surface 1a.

[0108] Optionally, the first plating layer 4 can be made of metal, alloy or non-metal material. For example, when the first plating layer 4 is made of non-metal material, the first plating layer 4 can be OSP (Organic solderability preservative).

[0109] Further, the first plating layer 4 and the metal circuit 1 can be made of different materials, so that the first plating layer 4 can be made of material having better bonding force with solder than the metal circuit 1. For example, when the solder is tin, the first plating layer 4 can be made of material having better bonding force with tin than the metal circuit 1. For example, when the metal circuit 1 is made of copper, the first plating layer 4 can be made of material including but not limited to gold, silver and tin, so that the light emitting chip 2 is connected to the metal circuit 1 through the solder and the first plating layer 4, and the light emitting chip 2 and the metal circuit 1 are less likely to be separated during the manufacturing and use of the light emitting device 100.

[0110] The first plating layer 4 has a thickness t1. The greater the thickness t1, the better the anti-oxidation protection effect of the first plating layer 4 on the metal circuit 1. However, if the thickness t1 is too large, the material cost of the first plating layer 4 will be too high, the process of plating the first plating layer 4 will take too long, and it will be difficult to make the light emitting device 100 smaller. Therefore, the thickness t1 of the first plating layer 4 should not be too large. Based on this, the thickness t1 of the first plating layer 4 can satisfy 0 μm < t1 ≤ 80 μm. For example, the thickness t1 of the first plating layer 4 can be 0.01 μm, 0.02 μm, 0.05 μm, 0.1 μm, 0.2 μm, 0.3 μm, 0.5 μm, 0.7 μm, 1 μm, 1.5 μm, 2 μm, 5 μm, 7 μm, 10 μm, 15 μm, 20 μm, 25 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm or 80 μm, etc.

[0111] Optionally, the surface 1a is covered with a second plating layer 5 to protect the surface 1a from oxidation and improve the service life of the metal circuit 1.

[0112] Among them, the second coating 5 and the first coating 4 can be formed through two processes respectively. Therefore, optionally, the thickness and material of the second coating 5 and the first coating 4 can be different, so that the thickness and material of the first coating 4 and the second coating 5 can be designed more flexibly.

[0113] Optionally, the second coating layer 5 may include a metal, an alloy or a non-metal material. For example, when the second coating layer 5 includes a non-metal material, the second coating layer 5 may be an OSP (Organic solderability preservative).

[0114] Since the external surface 1a needs to be electrically connected to the external circuit through the second plating layer 5 so that the light-emitting device 100 is electrically connected to the external circuit, and the light-emitting device 100 usually needs to be soldered to the external circuit through solder to be fixed to the circuit board carrying the external circuit, therefore, optionally, the second plating layer 5 can be a material with better bonding strength with the solder than the metal circuit 1. For example, when the solder is tin, the second plating layer 5 can be a material that is more tin-friendly than the metal circuit 1. Taking the metal circuit 1 as an example of copper material, the second plating layer 5 can be a material with better bonding strength with the solder tin, including but not limited to gold, silver, and tin, so that the light-emitting device 100 is connected to the external circuit through the second plating layer 5 and the solder with better connection stability.

[0115] The second coating layer 5 has a thickness t2. The greater the thickness t2, the better the anti-oxidation protection effect of the second coating layer 5 on the external surface 1a. However, if the thickness t2 is too thick, the material cost of the second coating layer 5 will be too high, the process of coating the second coating layer 5 will take too long, and it will be unfavorable for the light-emitting device 100 to achieve a more miniaturized design. Therefore, the thickness t2 of the second coating layer 5 cannot be too large. Based on this, optionally, the thickness t2 of the second coating layer 5 can meet the following requirements: 0 μm <t2≤80μm, for example, the thickness t2 of the second coating layer 5 may be 0.01μm, 0.02μm, 0.05μm, 0.1μm, 0.2μm, 0.3μm, 0.5μm, 0.7μm, 1μm, 1.5μm, 2μm, 5μm, 7μm, 10μm, 15μm, 20μm, 25μm, 30μm, 40μm, 50μm, 60μm, 70μm or 80μm, etc.

[0116] In the direction perpendicular to the external surface 1a, the distance between the end of the encapsulation glue structure 3 away from the external surface 1a and the end of the light-emitting chip 2 away from the external surface 1a is t3. It can be understood that as long as the distance t3 is greater than zero, the encapsulation glue structure 3 can achieve the effect of protecting the light-emitting chip 2 and the metal circuit 1 and connecting the light-emitting chip 2 and the metal circuit 1 into a whole. Moreover, the larger the distance t3, the better the protection and connection effect of the encapsulation glue structure 3 on the light-emitting chip 2 and the metal circuit 1. However, if the distance t3 is too large, the light-emitting device 100 will be deformed in the direction perpendicular to the external surface. The size in the direction of 1a is too large, which is not conducive to achieving a more miniaturized design of the light-emitting device 100. Based on this, optionally, the distance t3 between the end of the encapsulation glue structure 3 away from the external surface 1a and the end of the light-emitting chip 2 away from the external surface 1a can satisfy: 0μm<t3≤300μm, for example, the distance t3 can be 0.05μm, 0.1μm, 0.5μm, 1μm, 2μm, 3μm, 5μm, 10μm, 20μm, 50μm, 100μm, 150μm, 200μm, 250μm or 300μm, etc.

[0117] Please Figures 1 to 3 Based on Figure 10 As shown, optionally, the metal circuit 1 includes multiple pairs of die-bonding portions 102 and multiple solder legs 101, each pair of die-bonding portions 102 includes a first die-bonding portion 1021 and a second die-bonding portion 1022 that are spaced apart, and the multiple solder legs 101 include a first solder leg 1011 corresponding to the first die-bonding portion 1021 and a second solder leg 1012 corresponding to the second die-bonding portion 1022, the first die-bonding portion 1021 is electrically connected to the corresponding first solder leg 1011, and the second die-bonding portion 1022 is electrically connected to the corresponding second solder leg 101. 2. The light-emitting device 100 includes a plurality of light-emitting chips 2, each of which corresponds to a plurality of sets of die-bonding portions 102. The light-emitting chips 2 are connected to the corresponding first die-bonding portions 1021 and the second die-bonding portions 1022. Thus, the light-emitting device 100 includes a plurality of light-emitting chips 2 and is electrically connected to the plurality of light-emitting chips 2 through the metal line 1. When the solder foot portion 101 is electrically connected to an external circuit, the external circuit can control the light-emitting effect of each light-emitting chip 2 separately through the metal line 1, thereby controlling the light-emitting effect presented by the plurality of light-emitting chips 2 together.

[0118] Optionally, at least two first crystal-bonding parts 1021 are electrically connected to the corresponding same first solder foot 1011, and multiple second crystal-bonding parts 1022 correspond one-to-one to multiple second solder foot 1012, so that when each solder foot 101 is connected to an external circuit, the external circuit can control each light-emitting chip 2 respectively through each second solder foot 1012, and by making at least two first crystal-bonding parts 1021 correspondingly connected to the same first solder foot 1011, the metal circuit 1 and the external circuit correspondingly connected to the first solder part can be simplified.

[0119] The light emitting device 100 may include one, two, three, four, five, six or more light emitting chips 2. In this embodiment, the light emitting device 100 may include three light emitting chips 2, and the three light emitting chips 2 are respectively used to emit red light, green light and blue light. Based on this, for example, the metal line 1 may specifically include three pairs of solid crystal portions 102 and four solder feet 101. The three pairs of solid crystal portions 102 are arranged at intervals, and each pair of solid crystal portions 102 includes a first solid crystal portion 1021 and a second solid crystal portion 102 arranged at intervals. 2. The four solder legs 101 include a first solder leg 1011 and three second solder legs 1012. All the first die-bonding portions 1021 are electrically connected to the same first solder leg 1011. The remaining three second solder legs 1012 are electrically connected to the three second die-bonding portions 1022 in a one-to-one correspondence. The light-emitting device 100 includes three light-emitting chips 2. The three light-emitting chips 2 correspond to the three groups of die-bonding portions 102 respectively, and the light-emitting chips 2 are connected to the corresponding first die-bonding portions 1021 and second die-bonding portions 1022.

[0120] In other embodiments, the plurality of first die-bonding portions 1021 may correspond one to one with the plurality of first solder fillet portions 1011 .

[0121] like Figure 11 and Figure 12 As shown, the present invention also provides a method for preparing a light-emitting device, comprising:

[0122] Step S1 : providing a carrier board 200 , and manufacturing a plurality of arrays of metal circuits 1 on the carrier board 200 .

[0123] Specifically, a plurality of arrays of metal circuits 1 can be plated on the carrier board 200 by at least one method including but not limited to electroplating, chemical plating, chemical deposition, and evaporation, and can be used in conjunction with but not limited to masks and photoresists to assist in limiting the pattern of the metal circuits 1 formed by plating.

[0124] Please combine Figure 14 As shown, optionally, step S1 includes:

[0125] Step S10, providing a carrier plate 200, manufacturing at least one array of metal lines 1 and a plurality of cutting alignment lines 300 on the carrier plate 200, wherein the cutting alignment lines 300 are located at the outer periphery of the corresponding one array of metal lines 1 as a whole, and the cutting alignment lines 300 are arranged opposite to the interval between the adjacent two metal lines 1 or the outer periphery edge of the one array of metal lines 1 as a whole.

[0126] Thus, the cutting alignment lines 300 are manufactured on the carrier plate 200, so that in the subsequent step of cutting and separating each metal line 1, the cutting equipment can be provided with alignment reference through the cutting alignment lines 300, wherein, Figure 14 The structure obtained after step S1, step S101, step S102, step S2a and step S21 is sequentially shown in the middle.

[0127] Optionally, a plurality of arrays of metal lines 1 can be manufactured on the carrier plate 200 in step S10, each array of metal lines 1 is spaced apart, and the outer periphery of each array of metal lines 1 as a whole is provided with a cutting alignment line 300, so that the number of metal lines 1 included in one array of metal lines 1 can be adjusted more flexibly according to the needs. For example, by making the number of metal lines 1 included in one array of metal lines 1 smaller, the setting range of one array of metal lines 1 can be smaller, so that when the packaging glue is set for one array of metal lines 1 subsequently, the setting area of the packaging glue can also be smaller, so that the total amplitude of shrinkage of the packaging glue during the curing process is smaller, and the amplitude of warping due to shrinkage during the curing process of the packaging glue can be reduced.

[0128] Optionally, the length direction of the cutting alignment line 300 is parallel to the relative direction between the cutting alignment line 300 and the corresponding one array of metal lines 1, so that the cutting alignment line 300 can point to the interval between the adjacent two metal lines 1 along the length direction of itself, so that the cutting alignment line 300 has a better effect of providing alignment reference.

[0129] The cutting alignment line 300 has a length s1 and a width s2. The greater the length s1 is than the width s2, the better the indication effect of the cutting alignment line 300 along the extension direction is. However, if the length s1 is too large, the setting area occupied by the cutting alignment line 300 is too large, and the cutting alignment line 300 is more likely to be deformed during the peeling process from the carrier plate 200, resulting in entanglement with other cutting alignment lines 300. Therefore, the length s1 cannot be too large. Based on this, an optional In one embodiment, the length s1 and the width s2 of the cutting alignment line 300 may satisfy: s2≤s1≤5*s2. For example, the length s1 of the cutting alignment line 300 may be s2, 1.05s2, 1.1s2, 1.2s2, 1.5s2, 1.7s2, 2s2, 2.2s2, 2.5s2, 2.7s2, 3s2, 3.2s2, 3.5s2, 3.7s2, 4s2, 4.2s2, 4.5s2, 4.7s2, or 5s2, etc.

[0130] It can be understood that the longer the length s1 of the cutting alignment line 300 is, the better the indication effect of the cutting alignment line 300 along the extension direction is. However, if the length s1 is too large, the setting area occupied by the cutting alignment line 300 will be too large. Therefore, the length s1 cannot be too large. Based on this, in another optional embodiment, the length s1 of the cutting alignment line 300 can meet the following conditions: 10 μm ≤ s1 ≤ 2000 μm. For example, the length s1 of the cutting alignment line 300 is 10 μm ≤ s1 ≤ 2000 μm. The length s1 may be 10 μm, 20 μm, 30 μm, 50 μm, 70 μm, 100 μm, 120 μm, 150 μm, 170 μm, 200 μm, 250 μm, 300 μm, 350 μm, 400 μm, 450 μm, 500 μm, 600 μm, 800 μm, 1000 μm, 1200 μm, 1500 μm, 1700 μm or 2000 μm, etc.

[0131] The smaller the width s2 of the cutting alignment line 300, the smaller the cutting position range indicated by the cutting alignment line 300 along its own length direction, and the more accurately it can indicate the optimal cutting position. However, if the width s2 of the cutting alignment line 300 is too small, the cutting alignment line 300 will be too thin, which will significantly increase the difficulty of identifying the cutting alignment line 300. Therefore, the width s2 cannot be too small. Based on this, in another optional embodiment, the width s2 of the cutting alignment line 300 may satisfy: 10μm≤s2≤500μm. For example, the width s2 of the cutting alignment line 300 may be 10μm, 20μm, 30μm, 50μm, 70μm, 100μm, 120μm, 150μm, 170μm, 200μm, 250μm, 300μm, 350μm, 400μm, 450μm or 500μm, etc.

[0132] In addition, the length s1 and the width s2 of the cutting alignment line 300 may also satisfy at least two of the three optional embodiments mentioned above, so that the cutting alignment line 300 has better and more stable performance in indicating the cutting position.

[0133] When the metal circuit 1 includes metal pillars as described in the above technical solution, that is, the metal circuit 1 includes the first metal pillar 11, or includes the second metal pillar 12, or includes both the first metal pillar 11 and the second metal pillar 12, the circuit body 10 of the array can be first manufactured on the supporting board 200, and then the metal pillars can be manufactured on the circuit body 10.

[0134] Please combine Figure 13 As shown, optionally, a third metal column 300a can be provided on the cutting alignment line 300, and the packaging glue structure 3 also covers the third metal column 300a, so as to improve the connection stability between the cutting alignment line 300 and the packaging glue structure 3. When the cutting alignment line 300 and the packaging glue structure 3 are peeled off from the carrier board 200, the possibility of the cutting alignment line 300 being separated from the packaging glue structure 3 can be reduced, and the problem of large deformation of the cutting alignment line 300 relative to the packaging glue structure 3 can be alleviated. After the cutting alignment line 300 and the packaging glue structure 3 are peeled off from the carrier board 200, the cutting alignment line 300 can still better achieve the effect of indicating the cutting position.

[0135] Specifically, when the metal circuit 1 includes a metal column, the cutting alignment line 300 can be provided with a third metal column 300a or not. When the metal circuit 1 does not include a metal column, the cutting alignment line 300 can be provided with a third metal column 300a or not.

[0136] Taking the example that the metal line 1 includes the first metal pillar 11 and the third metal pillar 300 a is provided on the cutting alignment line 300 , step S10 may optionally include:

[0137] Step S100: Provide a carrier plate 200, and manufacture at least one array of circuit bodies 10 and a plurality of cutting alignment lines 300 on the carrier plate 200. The cutting alignment lines 300 are located on the periphery of the entire group of circuit bodies 10, and the cutting alignment lines 300 are arranged directly opposite the space between two adjacent circuit bodies 10 or the peripheral edge of the entire group of circuit bodies 10.

[0138] Step S101 : Plate a first metal pillar 11 on the circuit body 10 , and plate a third metal pillar 300 a on the cutting alignment line 300 .

[0139] Therefore, the first metal pillar 11 and the third metal pillar 300 a can be manufactured in the same process, which can simplify the manufacturing process of the first metal pillar 11 and the third metal pillar 300 a.

[0140] For example, metal pillars can be formed by plating at locations where metal pillars need to be plated. Specifically, a mask or photoresist can be used to cover locations where metal pillars are not needed. Then, metal pillars can be formed at locations where metal pillars need to be set by methods including but not limited to electroplating, chemical deposition, and evaporation. The mask can then be removed or the photoresist can be removed.

[0141] As mentioned in the aforementioned technical solution, in the process of setting the light-emitting chip 2 on the end of the first metal column 11 away from the circuit body 10, solder can usually be set on the end of the first metal column 11 away from the circuit body 10 by silk screen printing, and then the light-emitting chip 2 is fixed to the first metal column 11 by solder.

[0142] Based on this, when the height h3 of the third metal pillar 300a is less than the height h1 of the first metal pillar 11, the third metal pillar 300a is not likely to affect the process of silk-screening the solder, and when the height h3 of the third metal pillar 300a is greater than the height h1 of the first metal pillar 11, the end of the third metal pillar 300a away from the cutting alignment line 300 will resist the setting of the silk-screen device, so that the thickness of the solder set by silk-screening is greater than or equal to the height difference h3-h1 between the third metal pillar 300a and the first metal pillar 11.

[0143] Therefore, the height h3 of the third metal column 300a can be less than the height h1 of the first metal column 11, or the height h3 of the third metal column 300a can be greater than the height h1 of the first metal column 11, and the height difference h3-h1 between the third metal column 300a and the first metal column 11 cannot be too large, so as to avoid excessive solder screen-printed on the first metal column 11, resulting in excessive overflow of solder during the die-bonding process of the light-emitting chip 2, resulting in circuit short circuit and other problems. Based on this, optionally, the third metal column 300a can be made larger than the height h1 of the first metal column 11, and the height difference h3-h1 between the third metal column 300a and the first metal column 11 cannot be too large. The height h1 of the first metal pillar 11 and the height h3 of the third metal pillar 300a may satisfy: 0μm<h3≤h1+30μm. For example, h3 may be h1+30μm, h1+25μm, h1+20μm, h1+15μm, h1+10μm, h1+5μm, h1, h1-5μm, h1-10μm, h1-15μm, h1-20μm, h1-25μm or h1-30μm, etc., on the premise that h3 is greater than zero.

[0144] It can be understood that when the metal circuit 1 does not include the first metal pillar 11, it is equivalent to the height h1 of the first metal pillar 11 being equal to zero. At this time, in order to avoid excessive solder silk-screened on the first metal pillar 11 due to the structure of the third metal pillar 300a, the height h3 of the third metal pillar 300a can satisfy: 0μm<h3≤30μm. For example, h3 can be 0.01μm, 0.02μm, 0.05μm, 0.1μm, 0.2μm, 0.3μm, 0.5μm, 0.7μm, 1μm, 1.5μm, 2μm, 2.5μm, 3μm, 5μm, 7μm, 10μm, 15μm, 20μm, 25μm or 30μm, etc.

[0145] Optionally, after step S101, step S10 further includes:

[0146] Step S102 : forming a protruding structure 13 on at least one metal column.

[0147] The protruding structure 13 can be formed by plating at least one metal pillar, thereby further improving the connection stability between the at least one metal pillar and the encapsulation structure 3. The protruding structure 13 can be formed by plating at least one first metal pillar 11, and / or at least one second metal pillar 12, and / or at least one third metal pillar 300a.

[0148] Specifically, the periphery of the metal column where the protruding structure 13 is not required is blocked by a mask or colloid, and then the periphery of the unblocked metal column is plated at the position where the protruding structure 13 is required by a method including but not limited to electroplating, chemical plating, chemical deposition, and evaporation, and the mask is subsequently removed or the colloid is removed.

[0149] Alternatively, the entire peripheral surface of at least one metal column where the protruding structure 13 is required can be directly blocked by a mask or colloid, and then the end of the metal column away from the supporting plate 200 and the protruding structure 13 surrounding the periphery of the end can be formed on the top of the metal column by methods including but not limited to electroplating, chemical plating, chemical deposition, and evaporation.

[0150] Optionally, step S10 includes:

[0151] Step S10a: Provide a carrier board 200, and manufacture at least one array of metal circuits 1, multiple cutting alignment lines 300, and a frame 400 on the carrier board 200, wherein the cutting alignment lines 300 are located at the outer periphery of the corresponding group of metal circuits 1 as a whole, and the cutting alignment lines 300 are arranged directly at the interval between two adjacent metal circuits 1 or at the outer peripheral edge of the entire group of metal circuits 1. The frame 400 is spaced correspondingly around the outer periphery of the entire group of metal circuits 1, and the frame 400 is connected to all cutting alignment lines 300 corresponding to the same group of metal circuits 1.

[0152] Thus, multiple cutting alignment lines 300 can be connected through the frame 400 to limit the multiple cutting alignment lines 300, and by limiting the multiple cutting alignment lines 300, in the subsequent steps, the packaging glue structure 3 connected to the multiple cutting alignment lines 300 is limited, which can alleviate the problem of the packaging glue shrinking during the curing process, causing the metal circuit 1 and the cutting alignment lines 300 to be separated from the carrier board 200 on a large scale and causing warping.

[0153] Specifically, since the frame 400 is arranged around the entire periphery of a group of metal circuits 1, during the curing process of the packaging glue, the frame 400 can apply a force to the packaging glue through the cutting alignment line 300 from the entire periphery of the group of metal circuits 1, so as to at least counteract the board surface force parallel to the carrier board 200 applied to the cutting alignment line 300 and the metal circuit 1 due to the shrinkage of the packaging glue itself during the curing process.

[0154] When multiple groups of metal circuits 1 are arranged at intervals on the carrier board 200, optionally, two frames 400 respectively surrounding two adjacent groups of metal circuits 1 can be connected, so that the arrangement of the frames 400 is more compact, and when the packaging glue on the two adjacent groups of metal circuits 1 is cured, the two parts of the packaging glue exert opposite forces on the connected parts of the frames 400, so that the deformation of the connected parts of the frames 400 can be smaller, and the frames 400 have a better effect on reducing the deformation amplitude of the packaging glue and the metal circuits 1.

[0155] Optionally, after step S10a, step S10 may further include the aforementioned steps S101 and S102.

[0156] When, as described in the above technical solution, the metal circuit 1 is provided with a first plating layer 4 on at least a portion of the surface connected to the light-emitting chip 2 in addition to the external surface 1 a, optionally, after step S1 and before step S2, the method for preparing the light-emitting device 100 further includes:

[0157] Step S2a: forming a first plating layer 4 on at least a portion of the surface of the metal circuit 1 that is used to connect to the light-emitting chip 2 .

[0158] Specifically, the first coating layer 4 may be formed by methods including but not limited to electroplating, chemical plating, chemical deposition, and evaporation.

[0159] Optionally, after step S1 and before step S2, the method for preparing the light-emitting device 100 further includes:

[0160] Step S2b: using a silk screen stencil to screen-print solder on the surface of the portion of the metal circuit 1 that is used to connect to the light-emitting chip 2 .

[0161] The thickness of the silk screen stencil is in the range of 10 μm to 25 μm, so that the amount of solder set by silk screen printing is moderate, which can more firmly fix the light emitting chip 2 to the metal circuit 1 while preventing the solder from excessively overflowing and causing defects such as short circuits.

[0162] In other embodiments, solder may be provided on the surface of the portion of the metal circuit 1 that is connected to the light emitting chip 2 by spot soldering, batch solder transfer, or the like.

[0163] It can be understood that when the preparation method of the light-emitting device 100 further includes step S2a after step S1 and before step S2, step S2b is after step S2a and before step S2, so that the first plating layer 4 can be connected between the solder and the metal circuit 1, so that when the bonding force between the first plating layer 4 and the solder is greater than the bonding force between the metal circuit 1 and the solder, the first plating layer 4 can be used to improve the connection stability between the solder and the metal circuit 1.

[0164] Step S2 : Arrange the light-emitting chip 2 on the side of each metal circuit 1 facing away from the carrier board 200 .

[0165] The light emitting chip 2 may be bonded to the metal circuit 1 by any existing bonding technology. For example, when the light emitting chip 2 is bonded to the metal circuit 1 by solder, the method for preparing the light emitting device 100 may further include step S2b, and step S2 may include:

[0166] Step S20: placing the light emitting chip 2 on the solder.

[0167] Step S21 : bonding the light emitting chip 2 to the metal circuit 1 through solder.

[0168] Please also see Figure 11 、 Figure 12 as well as Figure 15 In step S3 , the metal circuit 1 and the light-emitting chip 2 on the carrier board 200 are covered with packaging glue.

[0169] in, Figure 15 , step S4, step S5, step S6a, and the structure obtained after step S6 are shown in sequence.

[0170] When, as described in the above technical solution, step S1 includes step S10, that is, when the cutting alignment line 300 is manufactured in step S10, step S3 may include:

[0171] Step S30 : Using packaging glue to cover the metal circuit 1 , the light-emitting chip 2 and at least a portion of each cutting alignment line 300 on the carrier board 200 .

[0172] After the packaging glue is cured to form the packaging glue structure 3, the packaging glue structure 3 can be used to connect the cutting alignment lines 300, the metal circuit 1 and the light-emitting chip 2 into a whole, so that the relative positions of the cutting alignment lines 300, the metal circuit 1 and the light-emitting chip 2 can be stabilized during the subsequent peeling process of the carrier board 200.

[0173] When, as described in the above technical solution, step S10 includes step S100 and step S101, that is, when the third metal pillar 300a is plated on the cutting alignment line 300 in step S101, step S30 further includes:

[0174] In step S300 , a packaging adhesive is used to cover the metal circuit 1 , the light-emitting chip 2 , the third metal pillar 300 a and at least a portion of each cutting alignment line 300 on the carrier board 200 .

[0175] Therefore, the effective connection area with the packaging adhesive can be increased by the third metal pillar 300 a , so that the connection stability between the cutting alignment line 300 and the cured packaging adhesive structure 3 is better.

[0176] Step S4: curing the packaging adhesive to form a packaging adhesive structure 3.

[0177] Thus, at least a portion of the metal circuit 1 and the carrier board 200 can be offset in a direction parallel to the board surface of the carrier board 200 and / or in a direction perpendicular to the board surface of the carrier board 200, so as to achieve pre-peeling of at least a portion of the metal circuit 1 relative to the carrier board 200, thereby reducing the difficulty of the subsequent step of peeling the metal circuit 1 and the packaging glue structure 3 from the carrier board 200 as a whole, and reducing the pulling force on the metal circuit 1 when it is peeled off the carrier board 200 as a whole, so as to reduce the deformation amplitude of the metal circuit 1 during the peeling process, thereby improving the yield of the manufactured light-emitting device 100.

[0178] Specifically, due to the shrinkage characteristic of the encapsulant during the curing process, after the encapsulant has cured to a certain degree, the connection between the encapsulant and the metal circuit 1 tends to be stable. As a result, the encapsulant will cause the metal circuit 1 to shift in a direction parallel to the surface of the carrier board 200 or perpendicular to the surface of the carrier board 200, or in a direction parallel to the surface of the carrier board 200 and perpendicular to the surface of the carrier board 200, during the shrinkage process, thereby releasing at least a portion of the structure of the metal circuit 1 from the carrier board 200. Therefore, on the one hand, compared to peeling the metal circuit 1 from a local area, the encapsulant can simultaneously apply force to the metal circuit 1 at all locations during the curing process during the shrinkage process, thereby more evenly distributing the shrinkage force on each metal circuit 1. This can prevent excessive local force on the metal circuit 1 from causing significant deformation of the metal circuit 1. On the other hand, by causing the encapsulant structure 3 to initially release the structure of the metal circuit 1 from the carrier board 200 in step S4, the difficulty of the subsequent step S5 can be reduced.

[0179] When, as described in the aforementioned technical solution, step S10 includes step S10a, when forming a frame 400 on the carrier board 200, the frame 400 can form a certain pulling on the encapsulation glue by cutting the alignment line 300 during the curing process of the encapsulation glue, so as to form a certain resistance force on the cutting alignment line 300 during the shrinkage process of the encapsulation glue, thereby reducing the shrinkage amplitude of the encapsulation glue, so that the encapsulation glue can drive at least part of the structure of at least part of the metal circuit 1 to shift relative to the carrier board 200 during the curing process, while making the degree of position shift small. After the encapsulation glue is cured to form the encapsulation glue structure 3, the overall structure formed by connecting the encapsulation glue structure 3 with the metal circuit 1, the light-emitting chip 2, and the cutting alignment line 300 does not warp or the degree of warping is small.

[0180] Step S5 , peeling the packaging adhesive structure 3 and the metal circuit 1 off the carrier board 200 .

[0181] Specifically, the encapsulation adhesive structure 3 can be peeled off from the carrier board 200 from a corner of the encapsulation adhesive structure 3 manually or by machine, and then the encapsulation adhesive structure 3 can be gradually used to drive the entire metal circuit 1 to be peeled off from the carrier board 200.

[0182] When, as described in the aforementioned technical solution, step S10 includes step S10a, to manufacture a frame 400 on the carrier board 200, the frame 400 can be peeled off from the carrier board 200 from a corner of the frame 400 manually or by machine, and then the frame 400 is gradually used to drive the cutting alignment line 300, the packaging glue structure 3 and the metal circuit 1 to be peeled off from the carrier board 200 as a whole.

[0183] Optionally, after step S5 and before step S6, the method for preparing the light-emitting device 100 further includes:

[0184] Step S6a: depositing a second coating layer 5 on the surface of the metal circuit 1 facing away from the light-emitting chip 2 .

[0185] Thus, the second coating 5 can be provided on the surface of the metal circuit 1 facing away from the light-emitting chip 2, that is, the external surface 1a of the metal circuit 1 in the aforementioned technical solution, to protect the external surface 1a of the metal circuit 1. Furthermore, by coating the second coating 5 on the external surface 1a after stripping the metal circuit 1 from the carrier board 200 in step S5, compared to the technical solution of directly providing the second coating 5 on the carrier board 200 and then forming the metal circuit 1 on the second coating 5, this arrangement can also prevent the second coating 5 from being damaged during the stripping process in step S5. In other words, the structure of the second coating 5 can be made uniform, so that the second coating 5 has a better protective effect on all positions of the external surface 1a.

[0186] Step S6 : cutting the packaging adhesive structure 3 to separate the metal circuits 1 of the array to obtain a plurality of light-emitting devices 100 .

[0187] Thus, the light-emitting device 100 with a smaller size as described in the above technical solution can be manufactured.

[0188] Among them, when a group of metal circuits 1 have a plurality of cutting alignment lines 300 distributed on the periphery as a whole as described in the aforementioned technical solution, in step S6, the cutting equipment can use the cutting alignment lines 300 as a reference to cut the packaging glue structure 3 to separate the metal circuits 1 of the array, and at the same time separate the cutting alignment lines 300 from the adjacent metal circuits 1 to obtain a plurality of light-emitting devices 100 with higher shape accuracy.

[0189] See Figure 16 The present invention also provides a light-emitting device, which includes a circuit board 500 and at least one light-emitting device 100 as described in the aforementioned technical solution. The external surface 1a of the light-emitting device 100 is electrically connected to the circuit board 500. Since the light-emitting device 100 can be designed in a smaller size, the structure of the light-emitting device can be lighter and thinner.

[0190] In the description herein, it should be understood that the terms "upper," "lower," "left," "right," and other orientations or positional relationships are based on the orientations or positional relationships shown in the accompanying drawings and are intended solely for ease of description and simplified operation. They do not indicate or imply that the devices or components referred to must have a specific orientation, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limitations on the present invention. Furthermore, the terms "first" and "second" are used solely for descriptive purposes and have no special meaning.

[0191] In this specification, reference to terms such as "one embodiment" or "example" means that a specific feature, structure, material, or characteristic described in conjunction with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example.

[0192] In addition, it should be understood that although this specification is described in terms of implementation methods, not every implementation method contains only one independent technical solution. This narrative method of the specification is only for the sake of clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment can also be appropriately combined to form other implementation methods that can be understood by those skilled in the art.

[0193] The technical principles of the present invention have been described above with reference to specific embodiments. These descriptions are intended solely to illustrate the principles of the present invention and are not to be construed in any way as limiting the scope of protection of the present invention. Based on the explanations herein, those skilled in the art will readily conceive of other specific embodiments of the present invention without inventive effort, and such embodiments will fall within the scope of protection of the present invention.

Claims

1. A light emitting device, characterized in that: include: A metal circuit (1), one side of the metal circuit (1) having an external surface (1a); a light-emitting chip (2), the light-emitting chip (2) being electrically connected to the metal circuit (1) and being arranged on a side of the metal circuit (1) away from the external surface (1a); and A packaging adhesive structure (3), the packaging adhesive structure (3) covers the light-emitting chip (2) and the surface of the metal circuit (1) except the external surface (1a).

2. The light emitting device according to claim 1, wherein The metal circuit (1) comprises a circuit body (10) and a first metal column (11), the circuit body (10) having the external surface (1a), the circuit body (10) comprising a solder foot portion (101) and a crystal-fixing portion (102) electrically connected to each other, the first metal column (11) being arranged on a side of the crystal-fixing portion (102) away from the external surface (1a), and the light-emitting chip (2) being arranged on an end of the first metal column (11) away from the circuit body (10).

3. The light emitting device according to claim 2, characterized in that The metal circuit (1) further comprises a second metal column (12) provided on a side of the solder foot portion (101) away from the external surface (1a), and the second metal column (12) is spaced apart from the first metal column (11).

4. The light emitting device according to claim 3, characterized in that The protruding height of the first metal column (11) protruding from the circumscribed surface (1a) is h1, and the protruding height of the second metal column (12) protruding from the circumscribed surface (1a) is h2, 0μm<h2≤h1+30μm.

5. The light emitting device according to any one of claims 2 to 4, characterized in that: A protruding structure (13) is provided on the outer periphery of at least one metal column, and the protruding structure (13) is at least partially spaced apart from the circuit body (10).

6. The light emitting device according to claim 5, characterized in that The protruding structure (13) has a buckling surface (130) facing the circumscribed surface (1a), and the buckling surface (130) is parallel to the circumscribed surface (1a), or the buckling surface (130) is arranged at an angle to the circumscribed surface (1a).

7. The light emitting device according to any one of claims 1 to 4, characterized in that: The metal circuit (1), except for the external surface (1a), is provided with a first plating layer (4) on at least a portion of the surface connected to the light-emitting chip (2); and / or, The circumscribed surface (1a) is covered with a second coating (5).

8. The light emitting device according to any one of claims 1 to 4, characterized in that: The metal circuit (1), except for the external surface (1a), is provided with a first plating layer (4) on at least a portion of the surface connected to the light-emitting chip (2), the first plating layer (4) having a thickness t1, 2μm≤t1≤80μm; and / or, The circumscribed surface (1a) is covered with a second plating layer (5), the second plating layer (5) having a thickness t2, 1 μm≤t2≤1.5 μm.

9. The light emitting device according to any one of claims 1 to 4, characterized in that: The metal circuit (1) comprises a plurality of pairs of crystal-bonding portions (102) and a plurality of soldering feet (101), each pair of the crystal-bonding portions (102) comprising a first crystal-bonding portion (1021) and a second crystal-bonding portion (1022) arranged at intervals, and the plurality of soldering feet (101) comprising a first soldering foot (1011) corresponding to the first crystal-bonding portion (1021) and a second soldering foot (1012) corresponding to the second crystal-bonding portion (1022); The first crystal-bonding portion (1021) is electrically connected to the corresponding first solder foot portion (1011), and the second crystal-bonding portion (1022) is electrically connected to the corresponding second solder foot portion (1012). The light-emitting device (100) includes a plurality of light-emitting chips (2), and the plurality of light-emitting chips (2) correspond one-to-one to a plurality of groups of crystal-bonding portions (102), and the light-emitting chips (2) are connected to the corresponding first crystal-bonding portion (1021) and the second crystal-bonding portion (1022).

10. The light emitting device according to claim 9, characterized in that At least two of the first die-bonding portions (1021) are electrically connected to a corresponding first solder foot portion (1011); The plurality of second crystal-fixing portions (1022) correspond one-to-one to the plurality of second solder foot portions (1012).

11. A method for preparing a light-emitting device, characterized in that: include: Step S1, providing a carrier plate (200), and manufacturing a plurality of arrays of metal circuits (1) on the carrier plate (200); Step S2, arranging a light-emitting chip (2) on a side of each metal circuit (1) facing away from the carrier board (200); Step S3: using packaging glue to cover the metal circuit (1) and the light-emitting chip (2) on the carrier board (200); Step S4, curing the packaging adhesive to form a packaging adhesive structure (3); Step S5, peeling the packaging adhesive structure (3) and the metal circuit (1) off the carrier board (200); Step S6: cutting the packaging adhesive structure (3) to separate the metal circuits (1) of the array to obtain a plurality of light-emitting devices (100).

12. The method for preparing a light-emitting device according to claim 11, wherein: The step S1 comprises: Step S10, providing the carrier board (200), manufacturing at least one group of arrayed metal circuits (1) and a plurality of cutting alignment lines (300) on the carrier board (200), wherein the cutting alignment lines (300) are located at the periphery of the entire group of the corresponding metal circuits (1), and the cutting alignment lines (300) are arranged directly opposite to the interval between two adjacent metal circuits (1) or the peripheral edge of the entire group of the metal circuits (1); The step S3 comprises: Step S30: using the packaging glue to cover at least a portion of the metal circuit (1), the light-emitting chip (2), and each of the cutting alignment lines (300) on the carrier board (200).

13. The method for preparing a light-emitting device according to claim 12, wherein: The length direction of the cutting alignment line (300) itself is parallel to the relative direction between the cutting alignment line (300) and a corresponding set of the metal lines (1), and the cutting alignment line (300) has a length s1 and a width s2; s2≤s1≤5*s2, and / or, 10μm≤s1≤2000μm, and / or, 10μm≤s2≤500μm.

14. The method for preparing a light-emitting device according to claim 12, wherein: The step S10 includes: Step S100, providing the carrier plate (200), manufacturing at least one array of circuit bodies (10) and a plurality of cutting alignment lines (300) on the carrier plate (200), wherein the cutting alignment lines (300) are located on the outer periphery of a corresponding group of the circuit bodies (10), and the cutting alignment lines (300) are arranged directly opposite to the interval between two adjacent circuit bodies (10) or the outer peripheral edge of a group of the circuit bodies (10); Step S101, plating a first metal column (11) on the circuit body (10), and plating a third metal column (300a) on the cutting alignment line (300); The step S30 further includes: Step S300: Using the packaging glue to cover at least a portion of the metal circuit (1), the light-emitting chip (2), the third metal column (300a), and each of the cutting alignment lines (300) on the carrier board (200).

15. The method for preparing a light-emitting device according to claim 14, wherein: After step S101, step S10 further includes: Step S102: Plating a protruding structure (13) on at least one metal column.

16. The method for preparing a light-emitting device according to any one of claims 12 to 15, characterized in that: The step S10 includes: Step S10a, providing the carrier board (200), manufacturing at least one group of arrayed metal circuits (1), a plurality of cutting alignment lines (300) and a frame (400) on the carrier board (200), wherein the cutting alignment lines (300) are located at the periphery of a corresponding group of metal circuits (1) as a whole, and the cutting alignment lines (300) are arranged opposite to the interval between two adjacent metal circuits (1) or the peripheral edge of a group of metal circuits (1) as a whole, the frame (400) is spaced correspondingly around the periphery of a group of metal circuits (1), and the frame (400) is connected to all the cutting alignment lines (300) corresponding to the same group of metal circuits (1).

17. The method for preparing a light-emitting device according to claim 11, wherein: After step S1 and before step S2, the method for preparing the light-emitting device further includes: Step S2a: Plating a first plating layer (4) on at least a portion of the surface of the metal circuit (1) that is used to connect to the light-emitting chip (2).

18. The method for preparing a light-emitting device according to any one of claims 11 to 15 or claim 17, wherein: After step S1 and before step S2, the method for preparing the light-emitting device further includes: Step S2b, using a silk screen steel mesh to silk screen solder on the surface of the portion of the metal circuit (1) that is used to connect to the light-emitting chip (2); Wherein, the thickness of the silk screen steel mesh is in the range of 10 μm to 25 μm; The step S2 comprises: Step S20, placing the light-emitting chip (2) on the solder; Step S21: bonding the light-emitting chip (2) to the metal circuit (1) through the solder.

19. The method for preparing a light-emitting device according to any one of claims 11 to 15 or claim 17, wherein: After step S5 and before step S6, the method for preparing the light-emitting device further includes: Step S6a: Plating a second plating layer (5) on the surface of the metal circuit (1) facing away from the light-emitting chip (2).

20. A light emitting device, characterized in that: The invention comprises a circuit board (500) and at least one light emitting device (100) according to any one of claims 1 to 10, wherein an external surface (1a) of the light emitting device (100) is electrically connected to the circuit board (500).

Images