High-temperature-resistant reaction tank for silicon powder purification and manufacturing method

Abstract

The high-temperature reaction tank comprises a reaction tank body, a plurality of rectangular isolation silicon plates and a plurality of high-temperature-resistant fixing parts, the fixing parts are welded and fixed along the circumference of the inner wall of the reaction tank body at intervals and extend in the height direction of the reaction tank body, and a fixing channel is formed between every two adjacent fixing parts. Clamping grooves matched with the fixing channels are formed in the two opposite sides of the rectangular isolation silicon plates in the length direction of the rectangular isolation silicon plates, and the multiple rectangular isolation silicon plates are sequentially inserted into the fixing channels through the clamping grooves; the rectangular isolation silicon plates inserted into the two adjacent fixed channels and the two adjacent rectangular isolation silicon plates inserted into the fixed channels are close to each other, and an isolation layer is formed on the inner wall of the reaction tank body so as to seal the fixed part and the inner wall of the reaction tank body; the silicon powder entering the reaction tank body is not in contact with the fixed part and the inner wall of the reaction tank body, so that the pollution to the silicon powder caused by separation of metal ions in the reaction tank body is reduced.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of reaction tank, and particularly relates to a high-temperature-resistant reaction tank for silicon powder purification and a manufacturing method. BACKGROUND

[0002] The silicon powder is a key basic material in the fields of semiconductor, photovoltaic and electronic component manufacturing, and the purity of the silicon powder directly affects the performance and reliability of downstream products. In the production and preparation process of the silicon powder, high-temperature purification is needed through a reaction tank.

[0003] The conventional reaction tank is generally made of metal material (such as stainless steel, carbon steel). In the high-temperature purification process of the silicon powder in the reaction tank, the center temperature of the silicon powder can reach about 600 DEG C. In the process of the inner wall of the reaction tank contacting the high-temperature silicon powder, the metal ions (such as Fe, Ni, Cr, etc.) in the inner wall of the reaction tank can slowly precipitate and adhere to the surface of the silicon powder. These metal ions can significantly reduce the purity of the silicon powder, and further affect the electrical properties in the semiconductor or photovoltaic application.

[0004] At present, in the prior art, in order to reduce the precipitation pollution of metal ions, the industry usually adopts polishing or spraying a silicon material coating on the inner wall of the reaction tank to isolate, to alleviate the above problems, but these methods still have limitations: the polishing process cannot completely eliminate the metal activity, and the silicon material coating is easy to wear and fall off in the process of use, resulting in short service life and poor stability of the reaction tank. Therefore, the high-temperature reaction process of the silicon powder in the reaction tank will become a weak point of pollution control. SUMMARY

[0005] Therefore, it is necessary to provide a high-temperature-resistant reaction tank for silicon powder purification, to solve the technical problem that the silicon powder is easily polluted by metal ions in the high-temperature reaction process in the reaction tank in the prior art.

[0006] It is also necessary to provide a manufacturing method of the high-temperature-resistant reaction tank.

[0007] The technical scheme adopted by the present application to solve the technical problem is: The utility model provides a kind of high-temperature resistant reaction tank for silicon powder purification, including reaction tank body, several rectangular isolation silicon plates made of single crystal silicon or polycrystalline silicon and several high-temperature resistant fixing pieces fixedly arranged on the inner wall of reaction tank body, several fixing pieces are fixed along the inner wall circumference of reaction tank body and are arranged along the height direction of reaction tank body, fixed channel is formed between adjacent two fixing pieces, the opposite sides of the rectangular isolation silicon plate are provided with clamping groove matched with fixed channel along its length direction, and several rectangular isolation silicon plates are sequentially inserted in each fixed channel, and the rectangular isolation silicon plates inserted in adjacent two fixed channels and the rectangular isolation silicon plates inserted in adjacent two fixed channels are closed to each other, to form isolation layer on the inner wall of reaction tank body, to close fixing piece and the inner wall of reaction tank body, so that the silicon powder entering the inner of reaction tank body does not contact with fixing piece and the inner wall of reaction tank body.

[0008] Preferably, the fixing piece includes a long strip-shaped bottom plate, a rib plate and a clamping plate, the bottom plate is fixedly arranged on the inner wall of the reaction tank body along the height direction of the reaction tank body, the rib plate is fixedly arranged on the middle of the upper end of the bottom plate along the height direction of the reaction tank body, and the clamping plate is fixedly arranged on the upper end of the rib plate and is opposite and parallel to the bottom plate, the bottom plate, the rib plate and the clamping plate form a long strip-shaped H-shaped frame body, the clamping plate sides of adjacent two fixing pieces form the fixed channel, and the clamping grooves on the two sides of the rectangular isolation silicon plate are clamped on the clamping plate sides of adjacent two fixing pieces.

[0009] Preferably, the inner wall of the reaction tank body is further provided with a stop plate, the stop plate is matched with the recess groove, and the stop plate is inserted in the recess groove and is fixedly connected with the inner wall of the reaction tank body to limit and stop the rectangular isolation silicon plate.

[0010] Preferably, the bottom plate of the reaction tank body is parallelly laid with a plate-shaped isolation silicon plate made of single crystal silicon or polycrystalline silicon, the lower end of the rectangular isolation silicon plate arranged on the inner wall of the reaction tank body is closed to the plate-shaped isolation silicon plate of the inner bottom of the reaction tank body, so that the silicon powder entering the inner of the reaction tank body does not contact with the inner bottom of the reaction tank body.

[0011] Preferably, the bottom plate and the side wall of the reaction tank body are detachably connected.

[0012] Preferably, a discharge pipe is arranged at the outer bottom of the tank bottom and communicates with the inner bottom of the tank bottom, a second tubular isolation silicon plate made of single crystal silicon or polycrystalline silicon is sleeved in the discharge pipe, the second tubular isolation silicon plate is inserted into the inner bottom of the tank bottom along the discharge pipe, the second tubular isolation silicon plate forms an isolation layer on the inner wall of the discharge pipe, and the plate-shaped isolation silicon plate laid on the inner bottom of the tank bottom and the end outer side wall of the second tubular isolation silicon plate inserted into the inner bottom of the tank bottom are tightly closed around each other to prevent the silicon powder in the reaction tank body from contacting the inner wall of the discharge pipe when the silicon powder is discharged from the discharge pipe.

[0013] Preferably, a feeding pipe is arranged on the outer side wall of the reaction tank body and communicates with the inside of the reaction tank body, a first tubular isolation silicon plate made of single crystal silicon or polycrystalline silicon is sleeved in the feeding pipe, the first tubular isolation silicon plate is inserted into the reaction tank body along the feeding pipe, the first tubular isolation silicon plate forms an isolation layer on the inner wall of the feeding pipe, and the rectangular isolation silicon plate on the inner wall of the reaction tank body and the end outer side wall of the first tubular isolation silicon plate inserted into the reaction tank body are tightly closed around each other to prevent the silicon powder from contacting the inner wall of the feeding pipe when the silicon powder is conveyed from the feeding pipe into the reaction tank body.

[0014] Preferably, a chamfer is arranged on the four peripheral edges of the rectangular isolation silicon plate, the plate-shaped isolation silicon plate, the first tubular isolation silicon plate and the second tubular isolation silicon plate.

[0015] A manufacturing method of a high-temperature-resistant reaction tank, which is used for manufacturing the high-temperature-resistant reaction tank for silicon powder purification, and the manufacturing method comprises the following steps. Step S1: a cylindrical reaction tank body is made by welding stainless steel or carbon steel.

[0016] Step S2: a bottom plate, a rib plate, a clamping plate and a stop plate are made by cutting stainless steel or carbon steel, and the bottom plate, the rib plate and the clamping plate are pre-welded to be combined into a fixed member in the shape of a long H-shaped structure by a welding process.

[0017] Step S3: a plurality of fixed members are welded on the inner wall of the reaction tank body in the height direction of the reaction tank body by a welding process, and are fixed to be uniformly distributed along the circumference of the inner wall of the reaction tank body, so that a fixed channel is formed between two fixed members.

[0018] Step S4: single crystal silicon or polycrystalline silicon is cut to be processed into a rectangular isolation silicon plate matched with the fixed channel, a plate-shaped isolation silicon plate matched with the inner bottom of the tank bottom of the reaction tank body, a first tubular isolation silicon plate matched with the feeding pipe and a second tubular isolation silicon plate matched with the discharge pipe. A clamping groove matched with the fixed member is formed on the length direction of the opposite two sides of each rectangular isolation silicon plate, and a groove matched with the stop plate is formed on the end of the rectangular isolation silicon plate. Pre-opening a through hole or an arc-shaped opening matched with the first tubular isolation silicon plate on the rectangular isolation silicon plate in contact with the first tubular isolation silicon plate; Pre-opening a through hole matched with the second tubular isolation silicon plate on the plate-shaped isolation silicon plate in contact with the second tubular isolation silicon plate; Chamfering the four peripheral edges of the rectangular isolation silicon plate, the plate-shaped isolation silicon plate, the first tubular isolation silicon plate and the second tubular isolation silicon plate.

[0019] Step S5, inserting the second tubular isolation silicon plate into the discharge pipe; laying the plate-shaped isolation silicon plates in parallel in the inner bottom of the tank bottom of the reaction tank body, and sleeving the plate-shaped isolation silicon plates on the ports of the second tubular isolation silicon plate, so that the plate-shaped isolation silicon plates and the outer side walls of the end portions of the second tubular isolation silicon plate are tightly closed to each other, to form an isolation layer on the inner bottom of the tank bottom of the reaction tank body and the inner wall of the discharge pipe, so that the silicon powder does not contact the inner bottom of the tank bottom and the inner wall of the discharge pipe; Inserting the first tubular isolation silicon plate into the feed pipe; inserting the rectangular isolation silicon plates into the fixed channels in sequence, and tightly closing the rectangular isolation silicon plates provided with the through holes or the arc-shaped openings to the outer side walls of the end portions of the first tubular isolation silicon plate inserted into the reaction tank body, to form an isolation layer on the inner wall of the reaction tank body and the feed pipe, so as to close the inner wall of the reaction tank body and the inner wall of the feed pipe, and prevent the silicon powder from contacting the fixing member, the inner wall of the reaction tank body and the inner wall of the feed pipe; And inserting a stop plate into the groove of the rectangular isolation silicon plate at the end portion of each fixed channel, and welding and fixing the stop plate on the inner wall of the reaction tank body to limit the rectangular isolation silicon plate and prevent the rectangular isolation silicon plate from moving along the fixed channel.

[0020] Step S6, assembling and connecting the tank bottom and the side wall of the reaction tank body.

[0021] Preferably, the gaps at the connection portions of the rectangular isolation silicon plates, the connection portions of the rectangular isolation silicon plates and the first tubular isolation silicon plate, the connection portions of the rectangular isolation silicon plates and the plate-shaped isolation silicon plate, and the connection portions of the plate-shaped isolation silicon plates and the second tubular isolation silicon plate are filled with silicon powder for sealing.

[0022] The application provides a high-temperature-resistant reaction tank for silicon powder purification and a manufacturing method. BRIEF DESCRIPTION OF DRAWINGS

[0023] Figure 1 It is a perspective structural schematic diagram of the application.

[0024] Figure 2 It is a top view structural schematic diagram of the application.

[0025] Figure 3 It is Figure 1 It is a sectional view structural schematic diagram of the application along A-A.

[0026] Figure 4 It is Figure 1 It is a partial enlarged schematic diagram of A of the application.

[0027] Figure 5 It is a perspective structural schematic diagram of the fixing member arranged in the reaction tank body.

[0028] Figure 6 It is a top view structural schematic diagram of the fixing member arranged in the reaction tank body.

[0029] Figure 7 It is an exploded structural schematic diagram of the reaction tank body and the tank bottom.

[0030] Figure 8 It is a structural schematic diagram of the rectangular isolation silicon plate.

[0031] Figure 9 It is an assembly structural schematic diagram of the rectangular isolation silicon plate and the fixing member.

[0032] Figure 10 Another angle structure diagram for assembling the rectangular isolation silicon plate and the fixing member.

[0033] In the figure: reaction tank body 10, feed pipe 11, discharge pipe 12, tank bottom 13, rectangular isolation silicon plate 20, clamping groove 21, chamfer 22, groove 23, fixing member 30, fixed channel 31, bottom plate 32, rib plate 33, clamping plate 34, first tubular isolation silicon plate 40, plate-shaped isolation silicon plate 50, second tubular isolation silicon plate 60, stop plate 70. DETAILED DESCRIPTION

[0034] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings needed to be used in the embodiments. Obviously, the drawings described in the following are some embodiments of the present application, and other drawings can also be obtained by those skilled in the art without any creative effort on the basis of these drawings.

[0035] Please refer to Figures 1 to 7 The embodiment of the present application provides a high-temperature-resistant reaction tank for silicon powder purification, which comprises a reaction tank body 10, a plurality of rectangular isolation silicon plates 20 and a plurality of high-temperature-resistant fixing members 30 welded and fixed on the inner wall of the reaction tank body 10. The reaction tank body 10 is a cylindrical tank body made of metal material (such as stainless steel, carbon steel), and the upper port of the reaction tank body 10 is used for connecting a silicon powder production device or mounting a sealing cover. The rectangular isolation silicon plate 20 is cut from single crystal silicon or polycrystalline silicon, and the size of the rectangular isolation silicon plate 20 matches the inner diameter of the reaction tank body 10. A plurality of fixing members 30 are evenly distributed and fixed along the inner wall circumference of the reaction tank body 10 by welding, and are arranged along the height direction of the reaction tank body 10. A fixed channel 31 is formed between two adjacent fixing members 30, and the width of the fixed channel 31 matches the width of the rectangular isolation silicon plate 20. A clamping groove 21 matching the fixed channel 31 is formed on the opposite sides of the rectangular isolation silicon plate 20 along the length direction thereof. A plurality of rectangular isolation silicon plates 20 are sequentially inserted into each fixed channel 31 through the clamping groove 21. The rectangular isolation silicon plate 20 is clamped by the fixed channel 31, so as to be fixed tightly against the inner wall of the reaction tank body 10. The rectangular isolation silicon plates 20 inserted into the same fixed channel 31 are connected end to end and tightly closed to each other. The rectangular isolation silicon plates 20 inserted into two adjacent fixed channels 31 are tightly closed to each other along the two adjacent edges facing the inner side of the reaction tank body 10, so as to form an isolation layer on the inner wall of the reaction tank body 10, thereby sealing the fixing member 30 and the inner wall of the reaction tank body 10, and preventing the silicon powder entering the reaction tank body 10 from contacting the fixing member 30 and the inner wall of the reaction tank body 10.

[0036] Please refer to Figures 6 to 10Specifically, the fixing member 30 is made of stainless steel or carbon steel. Each of the fixing members 30 includes a bottom plate 32, a rib plate 33 and a clamping plate 34 of equal length. The bottom plate 32 is fixedly arranged on the inner wall of the reaction tank body 10 along the height direction of the reaction tank body 10 by welding. The rib plate 33 is fixedly arranged in the middle of the upper end of the bottom plate 32 along the height direction of the reaction tank body 10. The clamping plate 34 is fixedly arranged on the rib plate 33 along the height direction of the reaction tank body 10. The upper end is directly opposite to and parallel to the bottom plate 32. The bottom plate 32, the rib plate 33 and the clamping plate 34 are welded together to form a long I-shaped frame. Several fixing members 30 are evenly spaced and fixed along the inner circumference of the reaction tank body 10, so that the above-mentioned fixing channel 31 is formed between the side edges of the clamping plates 34 of two adjacent fixing members 30. The clamping grooves 21 on both sides of the rectangular isolation silicon plate 20 match the clamping plates 34 and the rib plate 33 of the fixing member 30. The two rectangular isolation silicon plates 20 The card slots 21 on the upper side can be combined to form a T-shaped slot for accommodating the card plate 34 and the rib plate 33. After several rectangular isolation silicon plates 20 are inserted into each fixed channel 31 in turn, the two adjacent edges of the rectangular isolation silicon plates 20 facing the inner side of the reaction tank body 10 in the adjacent two fixed channels 31 are tightly closed to each other, forming a wrap-around shield for the card plate 34. In addition, the rectangular isolation silicon plates 20 inserted in the same fixed channel 31 are connected end to end and tightly closed to each other. A fixed channel 31 is established on the inner wall of the reaction tank body 10 through the fixing part 30. Several rectangular isolation silicon plates 20 are fixed on the inner wall of the reaction tank body 10 by inserting and locking, so that an isolation layer is formed on the inner wall of the reaction tank body 10, which can prevent the silicon powder entering the reaction tank body 10 from contacting the fixing part 30 and the inner wall of the reaction tank body 10. Furthermore, the pollution of the silicon powder caused by the precipitation of metal ions in the fixing part 30 and the inner wall of the reaction tank body 10 can be reduced, thereby ensuring the purity and stability of the silicon powder during the reaction process.

[0037] Please see Figure 1 、 Figure 2 、 Figure 4 and Figure 8 Furthermore, in order to prevent the rectangular isolation silicon plate 20 from moving along the fixed channel 31, a stop plate 70 is also provided on the inner wall of the reaction tank body 10. There are multiple stop plates 70, which stop at both ends of each fixed channel 31 respectively. The end of the rectangular isolation silicon plate 20 is provided with a groove 23 matching the stop plate 70. In the specific implementation, after the rectangular isolation silicon plate 20 is inserted into the fixed channel 31, the stop plate 70 is inserted into the groove 23, and the stop plate 70 is fixedly connected to the inner wall of the reaction tank body 10 by welding to limit the rectangular isolation silicon plate 20.

[0038] Please see Figure 1 and Figure 3Further, the outer side wall of the reaction tank body 10 is provided with a feeding pipe 11 communicating with the inside of the reaction tank body 10, and the feeding pipe 11 is used to transport silicon powder into the reaction tank body 10. In order to improve the isolation effect and reduce the pollution of metal ion precipitation in the feeding pipe 11 to the silicon powder, a first tubular isolation silicon plate 40 is sleeved in the feeding pipe 11. The first tubular isolation silicon plate 40 also adopts a tubular structure cut from single crystal silicon or polycrystalline silicon, and the outer diameter of the first tubular isolation silicon plate 40 matches the inner diameter of the feeding pipe 11. The rectangular isolation silicon plate 20 inserted on the inner wall of the reaction tank body 10 is provided with a through hole or an arc-shaped opening matching the outer diameter of the first tubular isolation silicon plate 40. After the first tubular isolation silicon plate 40 is inserted into the reaction tank body 10 along the feeding pipe 11, the rectangular isolation silicon plate 20 and the end portion of the first tubular isolation silicon plate 40 inserted into the reaction tank body 10 are tightly closed around the outer side wall. By forming an isolation layer on the inner wall of the feeding pipe 11 through the first tubular isolation silicon plate 40, when the silicon powder is input into the reaction tank body 10 from the first tubular isolation silicon plate 40, the silicon powder does not contact the inner wall of the feeding pipe 11, which can reduce the pollution of metal ion precipitation in the feeding pipe 11 to the silicon powder and further ensure the purity stability of the silicon powder in the reaction process.

[0039] Please refer to Figure 2 , Figure 3 and Figure 7 , further, the inner bottom of the tank bottom 13 of the reaction tank body 10 is parallelly laid with a plate-shaped isolation silicon plate 50, and the plate-shaped isolation silicon plate 50 also adopts a plate-shaped structure matching the inner bottom of the tank bottom 13, which is cut from single crystal silicon or polycrystalline silicon. The lower end of the rectangular isolation silicon plate 20 on the inner wall of the reaction tank body 10 is tightly closed with the plate-shaped isolation silicon plate 50 on the inner bottom of the reaction tank body 10, so that the silicon powder entering the reaction tank body 10 does not contact the inner bottom of the reaction tank body 10, which further ensures the purity stability of the silicon powder in the reaction process.

[0040] In the embodiment, the tank bottom 13 is detachably connected with the sidewall of the reaction tank body 10, which facilitates laying the plate-shaped isolation silicon plate 50 on the inner bottom of the tank bottom 13 and assembling the rectangular isolation silicon plate 20 on the inner wall of the reaction tank body 10. In order to facilitate discharging, a discharge pipe 12 is arranged on the outer bottom of the tank bottom 13 and communicates with the inner bottom of the tank bottom 13. A second tubular isolation silicon plate 60 is sleeved on the discharge pipe 12. The second tubular isolation silicon plate 60 is also a tubular structure matched with the discharge pipe 12 and is cut from single crystal silicon or polycrystalline silicon. The outer diameter of the second tubular isolation silicon plate 60 matches the inner diameter of the discharge pipe 12. A through hole with an outer diameter matching that of the second tubular isolation silicon plate 60 is formed in the plate-shaped isolation silicon plate 50 laid on the inner bottom of the tank bottom 13. After the second tubular isolation silicon plate 60 is inserted into the inner bottom of the tank bottom 13 along the discharge pipe 12, the plate-shaped isolation silicon plate 50 laid on the inner bottom of the tank bottom 13 and the end portion of the second tubular isolation silicon plate 60 inserted into the inner bottom of the tank bottom 13 abut against each other outside the sidewall of the tank bottom 13. The second tubular isolation silicon plate 60 forms an isolation layer on the inner wall of the discharge pipe 12, so that the silicon powder in the reaction tank body 10 does not contact the inner wall of the discharge pipe 12 when being discharged from the discharge pipe 12. The metal ions in the discharge pipe 12 are less likely to precipitate and pollute the silicon powder, which further ensures the purity stability of the silicon powder during the reaction and discharging.

[0041] In the above embodiment, the number of the feeding pipe 11 and the discharge pipe 12 can be set according to actual use requirements.

[0042] Further, the rectangular isolation silicon plate 20, the plate-shaped isolation silicon plate 50, the first tubular isolation silicon plate 40 and the second tubular isolation silicon plate 60 are all cut from single crystal silicon or polycrystalline silicon, and the corners thereof are relatively fragile and are prone to collapse. Therefore, chamfers 22 are arranged on the four peripheral edges of the rectangular isolation silicon plate 20, the plate-shaped isolation silicon plate 50, the first tubular isolation silicon plate 40 and the second tubular isolation silicon plate 60.

[0043] In the above embodiment, the rectangular isolation silicon plate 20, the plate-shaped isolation silicon plate 50, the first tubular isolation silicon plate 40 and the second tubular isolation silicon plate 60 are preferably cut from polycrystalline silicon, and the thickness of the rectangular isolation silicon plate 20, the plate-shaped isolation silicon plate 50, the first tubular isolation silicon plate 40 and the second tubular isolation silicon plate 60 is preferably 8-12 mm. The polycrystalline silicon is manufactured by the ingot casting method, which is simpler than the manufacturing process of single crystal silicon and has a lower production cost. The polycrystalline silicon has the same production raw material, chemical composition and physical property as the silicon powder and has high wear resistance and stability. The polycrystalline silicon is used to form an isolation layer on the inner wall of the reaction tank body 10, the feeding pipe 11 and the discharge pipe 12, which effectively isolates the silicon powder, reduces the pollution of the metal ions in the reaction tank body 10 to the silicon powder and ensures the purity stability of the silicon powder during the reaction.

[0044] It should be noted that in the production and manufacturing process of the high-temperature-resistant reaction tank, there will be certain gaps or gaps between the connecting parts of the high-purity silicon plates due to construction process defects, but in the actual use process, part of the silicon powder will enter the gaps between the high-purity silicon plates, and will be filled, and will play a closing role, and will not affect the purity stability of the silicon powder in the reaction process.

[0045] The application also provides a manufacturing method of a high-temperature-resistant reaction tank, which is used for manufacturing the high-temperature-resistant reaction tank for silicon powder purification. Step S1, a cylindrical reaction tank body 10 is made by welding stainless steel or carbon steel.

[0046] Step S2, the bottom plate 32, the rib plate 33, the clamping plate 34 and the stop plate 70 are cut from stainless steel or carbon steel, and the bottom plate 32, the rib plate 33 and the clamping plate 34 are pre-welded into a long strip-shaped I-shaped structure of the fixing piece 30 by using a laser welding process.

[0047] Step S3, a plurality of fixing pieces 30 are welded on the inner wall of the reaction tank body 10 along the height direction of the reaction tank body 10 by using a laser welding process, and are fixed along the circumference of the inner wall of the reaction tank body 10 at intervals, so that the fixed channels 31 are formed between the two fixing pieces 30.

[0048] Step S4, single crystal silicon or polycrystalline silicon is cut and processed into a rectangular isolation silicon plate 20 matched with the fixed channel 31, a plate-shaped isolation silicon plate 50 matched with the inner bottom of the tank bottom 13 of the reaction tank body 10, a first tubular isolation silicon plate 40 matched with the feeding pipe 11, and a second tubular isolation silicon plate 60 matched with the discharging pipe 12 by using a wire cutting process. A clamping groove 21 matched with the fixing piece 30 is formed on the opposite sides of each rectangular isolation silicon plate 20 along the length direction, and a recess 23 matched with the stop plate 70 is formed on the end of the rectangular isolation silicon plate 20. A through hole or an arc-shaped opening matched with the first tubular isolation silicon plate 40 is pre-formed on the rectangular isolation silicon plate 20 in contact with the first tubular isolation silicon plate 40. A through hole matched with the second tubular isolation silicon plate 60 is pre-formed on the plate-shaped isolation silicon plate 50 in contact with the second tubular isolation silicon plate 60. The four edges of the rectangular isolation silicon plate 20, the plate-shaped isolation silicon plate 50, the first tubular isolation silicon plate 40 and the second tubular isolation silicon plate 60 are chamfered 22.

[0049] Step S5, insert the second tubular isolation silicon plate 60 into the discharge pipe 12; lay the plate-shaped isolation silicon plate 50 in parallel in the inner bottom of the tank bottom 13 of the reaction tank body 10, and correspondingly set the plate-shaped isolation silicon plate 50 on the port of the second tubular isolation silicon plate 60, so that the plate-shaped isolation silicon plate 50 and the outer side wall of the end of the second tubular isolation silicon plate 60 are tightly closed to each other, to form an isolation layer on the inner bottom of the tank bottom 13 of the reaction tank body 10 and the inner wall of the discharge pipe 12, so that the silicon powder does not contact the inner bottom of the tank bottom 13 and the inner wall of the discharge pipe 12; insert the first tubular isolation silicon plate 40 into the feed pipe 11; insert the rectangular isolation silicon plate 20 into each fixed channel 31 in turn, and correspondingly close the rectangular isolation silicon plate 20 with a through hole or an arc-shaped opening to the end of the first tubular isolation silicon plate 40 inserted into the reaction tank body 10, so as to form an isolation layer on the inner wall of the reaction tank body 10 and the feed pipe 11, and to close the fixed part 30, the inner wall of the reaction tank body 10 and the inner wall of the feed pipe 11, so that the silicon powder does not contact the fixed part 30, the inner wall of the reaction tank body 10 and the inner wall of the feed pipe 11.

[0050] During the installation of the rectangular isolation silicon plate 20, the stop plate 70 is inserted into the groove 23 of the rectangular isolation silicon plate 20 in a spaced welding manner, and the stop plate 70 is correspondingly welded and fixed on the inner wall of the reaction tank body 10 to limit and stop the rectangular isolation silicon plate 20; and the stop plate 70 is also welded and fixed at the end of each fixed channel 31 to limit and stop the rectangular isolation silicon plate 20, preventing the rectangular isolation silicon plate 20 from moving along the fixed channel 31.

[0051] Step S6, assemble and connect the tank bottom 13 and the side wall of the reaction tank body 10 by the fixing bolts.

[0052] Further, fill the silicon powder in the gaps at the connection of each rectangular isolation silicon plate 20, the connection of the rectangular isolation silicon plate 20 and the first tubular isolation silicon plate 40, the connection of the rectangular isolation silicon plate 20 and the plate-shaped isolation silicon plate 50, and the connection of the plate-shaped isolation silicon plate 50 and the second tubular isolation silicon plate 60, to seal the gaps by the silicon powder.

[0053] The application provides a manufacturing method of the high-temperature-resistant reaction tank, which adopts the rectangular isolated silicon plate 20, the plate-shaped isolated silicon plate 50, the first tubular isolated silicon plate 40 and the second tubular isolated silicon plate 60 which are made of polycrystalline silicon or monocrystalline silicon material to establish the isolation layer in the reaction tank body 10 and the feeding pipe 11 and the discharging pipe 12, so that the silicon powder in the reaction tank body 10 is not in contact with the fixed part 30, the reaction tank body 10, the feeding pipe 11 and the inner wall of the discharging pipe 12, the polycrystalline silicon or monocrystalline silicon is the same as the production raw material, chemical composition and physical property of the silicon powder, can effectively isolate the silicon powder in the reaction tank body 10, reduces the pollution of the metal ion precipitation in the reaction tank body 10 to the silicon powder, and the polycrystalline silicon and monocrystalline silicon material has high wear resistance and stability, can improve the service life of the reaction tank body 10, and guarantees the purity stability of the silicon powder in the reaction process.

[0054] The above only discloses the preferred embodiments of the application, and of course cannot limit the scope of the application, and those skilled in the art can understand that all or part of the above-mentioned embodiments can be implemented, and equivalent changes made according to the claims of the application still belong to the scope of the application.

Claims

1. A high temperature resistant reaction tank for purifying silicon powder, characterized by: It includes a reaction tank body, several rectangular isolation silicon plates made of single crystal silicon or polycrystalline silicon, and several high-temperature resistant fixing parts welded and fixed on the inner wall of the reaction tank body. Several of the fixing parts are fixed at intervals along the circumference of the inner wall of the reaction tank body and extend along the height direction of the reaction tank body. A fixed channel is formed between two adjacent fixing parts. The opposite sides of the rectangular isolation silicon plates are provided with card grooves matching the fixed channels along their length directions. Several of the rectangular isolation silicon plates are inserted into each fixed channel in sequence, and the rectangular isolation silicon plates inserted in two adjacent fixed channels and the adjacent two rectangular isolation silicon plates inserted in each fixed channel are tightly closed to form an isolation layer on the inner wall of the reaction tank body to seal the fixing parts and the inner wall of the reaction tank body, so that the silicon powder entering the reaction tank body does not contact the fixing parts and the inner wall of the reaction tank body.

2. The high temperature resistant reaction tank for silicon powder purification according to claim 1, characterized in that: The fixing part includes a long strip of bottom plate, a rib plate and a card plate. The bottom plate extends along the height direction of the reaction tank body and is fixed on the inner wall of the reaction tank body. The rib plate extends along the height direction of the reaction tank body and is fixed at the middle of the upper end of the bottom plate. The card plate extends along the height direction of the reaction tank body and is fixed at the upper end of the rib plate, and is opposite and parallel to the bottom plate. The bottom plate, the rib plate and the card plate are combined with each other to form a long strip of I-shaped structure frame. The above-mentioned fixed channel is formed between the side edges of the card plates of two adjacent fixing parts. The card grooves on both sides of the rectangular isolation silicon plate are correspondingly clamped on the side edges of the card plates of the two adjacent fixing parts, and the rectangular isolation silicon plates in the two adjacent fixed channels are tightly closed against each other at the two adjacent edges facing the inner side of the reaction tank body.

3. The high temperature resistant reaction tank for silicon powder purification according to claim 2, characterized in that: A stop plate is also provided at the upper end of the inner wall of the reaction tank body. There are multiple stop plates, which stop at both ends of each fixed channel respectively. The end of the rectangular isolation silicon plate is provided with a groove matching the stop plate. The stop plate is inserted in the groove and fixedly connected to the inner wall of the reaction tank body to limit the rectangular isolation silicon plate.

4. The high temperature resistant reaction tank for silicon powder purification according to claim 3, characterized in that: A plate-shaped isolation silicon plate made of single crystal silicon or polycrystalline silicon is laid parallel to the inner bottom of the bottom of the reaction tank body. The lower end of the rectangular isolation silicon plate arranged on the inner wall of the reaction tank body is tightly closed to the plate-shaped isolation silicon plate at the bottom of the reaction tank body, so that the silicon powder entering the reaction tank body does not contact the inner bottom of the reaction tank body.

5. The high temperature resistant reaction tank for silicon powder purification according to claim 4, characterized in that: The tank bottom is detachably connected to the side wall of the reaction tank body.

6. The high temperature resistant reaction tank for silicon powder purification according to claim 5, characterized in that: A discharge pipe connected to the inner bottom of the tank bottom is provided at the outer bottom of the tank bottom, and a second tubular isolation silicon plate made of monocrystalline silicon or polycrystalline silicon is sleeved in the discharge pipe. The second tubular isolation silicon plate is inserted into the inner bottom of the tank bottom along the discharge pipe. The second tubular isolation silicon plate forms an isolation layer on the inner wall of the discharge pipe. The plate-shaped isolation silicon plate laid on the inner bottom of the tank bottom and the outer side wall of the end of the second tubular isolation silicon plate inserted into the inner bottom of the tank bottom are tightly closed to each other, so that the silicon powder in the reaction tank body does not contact the inner wall of the discharge pipe when it is discharged outward from the discharge pipe.

7. The high temperature resistant reaction tank for silicon powder purification according to claim 6, characterized in that: A feed pipe connected to the interior of the reaction tank body is provided on the outer wall of the reaction tank body, and a first tubular isolation silicon plate made of single crystal silicon or polycrystalline silicon is sleeved in the feed pipe. The first tubular isolation silicon plate is inserted into the reaction tank body along the feed pipe. The first tubular isolation silicon plate forms an isolation layer on the inner wall of the feed pipe, and the rectangular isolation silicon plate on the inner wall of the reaction tank body and the outer wall of the end of the first tubular isolation silicon plate inserted into the reaction tank body are tightly closed to each other, so that the silicon powder does not contact the inner wall of the feed pipe when being transported from the feed pipe to the reaction tank body.

8. The high temperature resistant reaction tank for silicon powder purification according to claim 7, characterized in that: Chamfers are provided on the four peripheral edges of the rectangular isolation silicon plate, the plate-shaped isolation silicon plate, the first tubular isolation silicon plate and the second tubular isolation silicon plate.

9. A method for manufacturing a high-temperature resistant reaction tank for silicon powder purification according to any one of claims 3 to 9, characterized in that: The manufacturing method comprises the following steps: Step S1, using stainless steel or carbon steel welding to make a cylindrical reaction tank body; Step S2: Cut and manufacture a bottom plate, rib plate, clamp plate, and stop plate from stainless steel or carbon steel, and pre-weld the bottom plate, rib plate, and clamp plate into a long I-shaped fixing member by welding; Step S3: Using a welding process, several fixing members are extended along the height direction of the reaction tank body and welded to the inner wall of the reaction tank body, and are evenly spaced and fixed along the circumference of the inner wall of the reaction tank body to form a fixed channel between two fixing members; Step S4: using a cutting process to cut and process the single crystal silicon or polycrystalline silicon into a rectangular isolation silicon plate that matches the fixed channel, a plate-shaped isolation silicon plate that matches the bottom of the reaction tank body, a first tubular isolation silicon plate that matches the feed pipe, and a second tubular isolation silicon plate that matches the discharge pipe; A slot matching the fixing piece is provided on opposite sides of each rectangular isolation silicon plate along its length, and a groove matching the stop plate is provided at the end of the rectangular isolation silicon plate; A through hole or an arc-shaped opening matching the first tubular isolation silicon plate is pre-opened on the rectangular isolation silicon plate in contact with the first tubular isolation silicon plate; A through hole matching the second tubular isolation silicon plate is pre-opened on the plate-shaped isolation silicon plate in contact with the second tubular isolation silicon plate; Chamfering the four edges of the rectangular isolation silicon plate, the plate-shaped isolation silicon plate, the first tubular isolation silicon plate, and the second tubular isolation silicon plate; Step S5, inserting the second tubular isolation silicon plate into the discharge pipe; laying the plate-shaped isolation silicon plates in parallel on the inner bottom of the tank bottom of the reaction tank body, and correspondingly sleeved on the ends of the second tubular isolation silicon plate, so that the plate-shaped isolation silicon plate and the outer side walls of the ends of the second tubular isolation silicon plate are tightly closed to form an isolation layer on the inner bottom of the tank bottom of the reaction tank body and the inner wall of the discharge pipe, so that the silicon powder does not contact the inner bottom of the tank bottom and the inner wall of the discharge pipe; Inserting a first tubular isolation silicon plate into the feed pipe; inserting rectangular isolation silicon plates into each fixed channel in sequence, and closing the outer walls of the end of the rectangular isolation silicon plate with a through hole or an arc-shaped opening corresponding to the first tubular isolation silicon plate inserted into the reaction tank body tightly together to form an isolation layer on the inner wall of the reaction tank body and the feed pipe, sealing the fixing piece, the inner wall of the reaction tank body, and the inner wall of the feed pipe, so that the silicon powder does not contact the fixing piece, the inner wall of the reaction tank body, and the inner wall of the feed pipe; A stopper plate is inserted into the groove of the rectangular isolation silicon plate at the end of each fixed channel, and the stopper plate is welded and fixed to the inner wall of the reaction tank body to limit the position of the rectangular isolation silicon plate and prevent the rectangular isolation silicon plate from moving along the fixed channel; Step S6: Assemble and connect the tank bottom and the side wall of the reaction tank body.

10. The method for manufacturing a high temperature resistant reaction tank according to claim 9, wherein: Silicon powder is filled in the gaps between the rectangular isolation silicon plates, the connection between the rectangular isolation silicon plate and the first tubular isolation silicon plate, the connection between the rectangular isolation silicon plate and the plate-shaped isolation silicon plate, and the connection between the plate-shaped isolation silicon plate and the second tubular isolation silicon plate for sealing.

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