Crystal pulling control method and system and monocrystalline silicon rod

Abstract

The embodiment of the invention provides a crystal pulling control method and system and a silicon single crystal rod, and relates to the field of semiconductors, and the method comprises the steps: collecting real-time data of a shouldering stage, and determining that the real-time data of the shouldering stage meets a preset condition; on the premise that the real-time data meets a preset condition, obtaining shouldering control data based on the real-time data; and carrying out crucible lifting operation based on the shouldering control data. According to the application, the real-time data of the shouldering stage can be acquired, the shouldering control data is dynamically obtained based on the real-time data under the condition that the real-time data meets the preset condition, and the crucible lifting operation is performed by utilizing the shouldering control data, so that the stability and consistency of the crystal growth process are ensured.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor technology, in particular to a crystal pulling control method and system and a single crystal silicon rod. BACKGROUND

[0002] Crystal growth is one of the key processes in the high-tech industries of semiconductors, photovoltaics, optics, etc., and its quality directly affects the performance of the final product. In the crystal growth process, the off-heat stage refers to the stage from the start of crystal growth from the seed crystal to the formation of a stable diameter. The control accuracy of the off-heat stage directly affects the diameter uniformity, defect rate and overall growth efficiency of the crystal, and thus is a key link to determine the quality of the crystal.

[0003] However, the crystal growth equipment mainly relies on preset fixed parameters (such as fixed crucible lifting speed) in the control of the off-heat stage, which is prone to problems such as diameter fluctuation and abnormal liquid level, thereby affecting the stability of the crystal growth process. SUMMARY

[0004] The present application provides a crystal pulling control method and system and a single crystal silicon rod to improve the stability of the crystal growth process.

[0005] In a first aspect, the present application provides a crystal pulling control method, which comprises:

[0006] collecting real-time data of the off-heat stage and determining that the real-time data meet a preset condition;

[0007] on the premise that the real-time data meet the preset condition, obtaining off-heat control data based on the real-time data;

[0008] performing a crucible lifting operation based on the off-heat control data.

[0009] In some embodiments, the real-time data includes a current crystal diameter and a crystal actual pulling speed.

[0010] Obtaining off-heat control data based on the real-time data comprises:

[0011] obtaining a current lifting speed value of the crucible lifting based on the current crystal diameter and the crystal actual pulling speed.

[0012] In some embodiments, obtaining a current lifting speed value of the crucible lifting based on the current crystal diameter and the crystal actual pulling speed comprises:

[0013] obtaining a target coefficient value corresponding to the current crystal diameter in a first configuration table based on the current crystal diameter;

[0014] obtaining the current lifting speed value based on the current crystal diameter, the crystal actual pulling speed and the target coefficient value.

[0015] In some embodiments, the crystal pulling control method comprises at least one control period;

[0016] performing crucible lifting operation based on the mold-on shoulder control data, comprising:

[0017] In each of the control periods, performing crucible lifting operation based on the current lifting speed value;

[0018] In the case where the crystal pulling control method comprises at least two control periods, before performing crucible lifting operation based on the current lifting speed value, the crystal pulling control method further comprises:

[0019] obtaining a historical lifting speed value of a previous control period, and determining that a deviation between the current lifting speed value and the historical lifting speed value is less than a preset threshold.

[0020] In some embodiments, the real-time data comprises a current crystal weight and a current crucible position;

[0021] determining that the real-time data satisfies a preset condition, comprising:

[0022] based on the current crystal weight, obtaining a corresponding crucible position protection range interval in a second configuration table;

[0023] based on the current crucible position and a mold-on shoulder start crucible position, obtaining a crucible position difference value, and determining that the crucible position difference value is located in the crucible position protection range interval.

[0024] In some embodiments, the real-time data comprises a current liquid level;

[0025] determining that the real-time data satisfies a preset condition, comprising:

[0026] determining that the current liquid level satisfies a preset liquid level range.

[0027] In some embodiments, the real-time data comprises a current heartbeat signal;

[0028] determining that the real-time data satisfies a preset condition, comprising:

[0029] determining that the current heartbeat signal is not interrupted.

[0030] In some embodiments, the crystal pulling control method further comprises:

[0031] determining that any real-time data of the mold-on shoulder stage does not satisfy the preset condition, triggering an alarm information.

[0032] In a second aspect, the embodiments of the present application provide a crystal pulling control system, comprising:

[0033] The acquisition device is used to acquire real-time data of the crystal and the growth equipment in the shoulder stage.

[0034] The processing device comprises a thread pool, the thread pool comprises a plurality of parallel threads, each thread is used to determine that the preset condition is met based on the real-time data of the crystal and the growth equipment in the shoulder stage, and the shoulder control data of the growth equipment is obtained based on the real-time data.

[0035] The action device is used to control the movement of the growth equipment based on the shoulder control data.

[0036] In a third aspect, the embodiments of the present application provide a single crystal silicon rod, which is prepared by a Czochralski method, and the Czochralski method comprises the crystal pulling control method according to any one of the first aspect.

[0037] The crystal pulling control method provided by the embodiments of the present application can acquire real-time data in the shoulder stage, and in the case that the real-time data meets the preset condition, the shoulder control data is dynamically obtained based on the real-time data, and the crucible lifting operation is performed by using the shoulder control data, thereby ensuring the stability and consistency of the crystal growth process. BRIEF DESCRIPTION OF DRAWINGS

[0038] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed in the embodiment description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0039] Figure 1 It is a whole flowchart of the crystal pulling control method of the embodiments of the present application.

[0040] Figure 2 It is a flowchart of real-time data detection in the embodiments of the present application.

[0041] Figure 3 It is a specific flowchart of the crystal pulling control method of the embodiments of the present application.

[0042] Figure 4 It is a structure diagram of the crystal pulling control device of the embodiments of the present application.

[0043] Figure 5 It is a structure diagram of the crystal pulling control system of the embodiments of the present application.

[0044] Explanation of reference signs:

[0045] 401-data detection module; 402-data processing module; 403-equipment control module; 501-acquisition device; 502-processing device; 503-action device. DETAILED DESCRIPTION

[0046] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by a person of ordinary skill in the art without creative work fall within the scope of protection of the present application.

[0047] In the description of the present application, it should be understood that the orientation or positional relationship indicated by the terms “center”, “longitudinal”, “lateral”, “length”, “width”, “thickness”, “upper”, “lower”, “front”, “back”, “left”, “right”, “vertical”, “horizontal”, “top”, “bottom”, “inner”, “outer” and the like is based on the orientation or positional relationship shown in the drawings, and is only for the purpose of facilitating the description of the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application. In addition, the terms “first” and “second” are only for the purpose of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined with “first” and “second” can explicitly or implicitly include one or more of the features. In the description of the present application, the meaning of “plurality” is two or more, unless otherwise explicitly and specifically limited.

[0048] “A and / or B” includes the following three combinations: only A, only B, and a combination of A and B.

[0049] The use of “adapted for” or “configured for” in the present application means open and inclusive language that does not exclude devices adapted for or configured for performing additional tasks or steps. In addition, the use of “based on” means open and inclusive, because the process, step, calculation or other action “based on” one or more stated conditions or values can be based on additional conditions or values beyond those stated in practice.

[0050] In this application, the word "exemplary" is used to mean "serving as an example, instance, or illustration." Any implementation described as "exemplary" in this application is not necessarily to be construed as preferred or advantageous over other implementations. The following description is presented to enable any person skilled in the art to make and use the application. In the following description, for purposes of explanation, specific details are set forth to provide a thorough understanding of the present application. It will be apparent to one skilled in the art, however, that the present application can be practiced without using these specific details. In other instances, well-known structures and processes are not elaborated in order not to obscure the description of the present application with unnecessary details. Thus, the present application is not intended to be limited by the embodiments shown, but is to be accorded with the widest scope consistent with the principles and features disclosed herein.

[0051] The control method of the commonly used growth equipment in the shoulder stage mainly includes four kinds: the first is to rely on manual control, that is, the operator manually adjusts the parameters of the growth equipment according to experience, such as crucible speed, which depends on manual experience, has low control accuracy, slow response speed, and cannot adapt to large-scale production requirements; the second is automatic control based on fixed parameters, that is, the equipment automatically controls according to the preset fixed parameters, which cannot dynamically adjust the parameters according to real-time data, leading to problems such as diameter fluctuation and abnormal liquid level in the crystal growth process, thereby affecting the stability of the crystal growth process; the third is control based on simple feedback, that is, the equipment obtains part of the real-time data through sensors and adjusts the parameters according to a simple feedback mechanism, which has a simple feedback mechanism and cannot handle complex abnormal situations, and it is difficult to achieve efficient management in a multi-equipment environment; the fourth is predictive control based on historical data, that is, by analyzing historical data, predicting parameter changes in the crystal growth process, and adjusting in advance, the prediction accuracy is greatly affected by the quality of historical data, cannot respond to sudden abnormalities in real time, and it is difficult to achieve efficient management in a multi-equipment environment.

[0052] That is to say, the traditional technology often relies on manual monitoring or simple automatic control, cannot obtain and process a large amount of equipment running data in real time, resulting in insufficient control accuracy; or usually uses fixed process parameters, cannot dynamically adjust key parameters according to real-time data, leading to problems such as diameter fluctuation and abnormal liquid level in the crystal growth process, parameter adjustment is relatively lagging, and dynamic adjustment capability is insufficient; or relies more on manual intervention when detecting abnormalities, has slow response speed, and abnormal processing is not timely, which can easily lead to production accidents or rising of waste rate; or in a large-scale production environment, it is difficult to monitor and control the running state of multiple equipment at the same time, resulting in low production efficiency, low resource utilization rate, and difficult management of multiple equipment.

[0053] Therefore, the embodiment of the present application provides a crystal pulling control method, which dynamically adjusts the shoulder opening control data based on the real-time data of the real-time monitored shoulder opening stage, and performs crucible lifting operation by using the shoulder opening control data, thereby ensuring the stability and consistency of the crystal growth process, so that at least part of the above technical problems can be solved.

[0054] The embodiment of the present application has a wide application field, mainly focusing on the field requiring high-precision crystal growth control. For example, in the semiconductor manufacturing field, crystal growth is a key step for producing silicon wafers, and the quality of silicon wafers directly affects the performance of semiconductor devices. The embodiment of the present application can ensure that the diameter uniformity and defect rate of silicon wafers are controlled at a very low level by real-time monitoring and dynamically adjusting the crystal growth parameters, thereby improving the yield and performance of semiconductor devices. In the photovoltaic field, crystalline silicon is the core material of solar cells, and the quality of crystalline silicon directly affects the conversion efficiency of solar cells. The embodiment of the present application can ensure the high-quality growth of crystalline silicon by precisely controlling the crucible lifting speed during the crystal growth process, thereby improving the efficiency and stability of solar cells. In the field of optical material manufacturing, such as laser crystals and optical glass, crystal growth is a key step to ensure the optical performance of materials. The embodiment of the present application can ensure the high transparency and low defect rate of optical materials by dynamically adjusting the crystal growth parameters, thereby meeting the needs of high-precision optical devices. In the LED field, sapphire crystal is the main material of LED substrates, and the quality of sapphire crystal directly affects the brightness and service life of LEDs. The embodiment of the present application can ensure the stability and consistency of the sapphire crystal growth process by real-time monitoring and anomaly detection, thereby improving the quality and reliability of LED products. In the field of aerospace materials, high-temperature alloy single crystal material is a key material for manufacturing turbine blades, and the quality of single crystal material directly affects the performance and service life of engines. The embodiment of the present application can ensure the high strength and low defect rate of high-temperature alloy single crystal material by precisely controlling the parameters during the crystal growth process, thereby meeting the high standards of the aerospace field. In the scientific research and laboratory environment, crystal growth is an important part of materials science research. The embodiment of the present application can improve the precision and repeatability of crystal growth experiments by automatic control and real-time monitoring, thereby providing support for the research and development of new materials. In the field of large-scale industrial production, such as the production of polycrystalline silicon and single crystal silicon, crystal growth is one of the core processes. The embodiment of the present application can realize efficient monitoring and management of large-scale equipment by multi-thread parallel processing and centralized control, thereby improving production efficiency and resource utilization. In the context of intelligent manufacturing and Industry 4.0, the intelligentization and automation of crystal growth equipment are the development trend. The embodiment of the present application can realize intelligent control of crystal growth equipment by real-time data acquisition, dynamic parameter adjustment and anomaly detection, thereby promoting the development of intelligent manufacturing.

[0055] That is to say, the crystal pulling control method of the embodiments of the present application has wide application prospects in the fields of semiconductor manufacturing, photovoltaic industry, optical material manufacturing, LED industry, aerospace materials, scientific research and laboratory, large-scale industrial production, and intelligent manufacturing and Industry 4.0. Through real-time monitoring, dynamic parameter adjustment, abnormality detection and alarm, multi-thread parallel processing and other functions, the embodiments of the present application can significantly improve the quality and efficiency of crystal growth, meeting the needs of various industries for high-precision crystal growth control.

[0056] The method of the embodiments of the present application will be introduced below in conjunction with the accompanying drawings.

[0057] Please refer to Figure 1 , Figure 1 is a schematic diagram of the overall process of the crystal pulling control method of the embodiments of the present application. The method specifically includes the following steps:

[0058] Step 101: Collect real-time data in the shoulder-up stage, and determine that the real-time data meet the preset conditions.

[0059] In some examples, the real-time data in the shoulder-up stage can represent the real-time data of the crystal and the growth equipment in the shoulder-up stage. The real-time data in the shoulder-up stage can include the current crystal weight, the current crucible position, the current crystal diameter, and the actual crystal pulling speed, and can also include the current liquid level, the current heartbeat signal, the furnace table number of the growth equipment, etc. Specifically, the real-time data in the shoulder-up stage can be obtained through a parameter acquisition system, which is used to acquire the current crystal weight, the current crucible position, the current crystal diameter, the actual crystal pulling speed, the current liquid level, etc., and store each parameter through the corresponding identifier. In this way, by obtaining the specific value corresponding to the identifier of the corresponding parameter in the parameter acquisition system, the values of the real-time data can be obtained. The data type of the real-time data can be Double type, which is double precision type. The shoulder-up control data can include the current speed value of the crucible lifting, that is, the current speed value of the growth equipment for lifting the crucible. Exemplarily, the growth equipment can be a crucible in a single crystal furnace.

[0060] Exemplarily, the unit of the current crystal weight is kg (kilogram), and the value range can be 0 kg-11 kg, for example, it can be 9 kg. The unit of the current crucible position is mm (millimeter), and the value range can be -100 mm-555 mm, for example, it can be 76 mm. The unit of the current crystal diameter is mm (millimeter), and the value range can be 5 mm-299 mm, for example, it can be 130 mm. The unit of the actual crystal pulling speed is mm / h (millimeter per hour), and the value range can be 50 mm / h-120 mm / h, for example, it can be 63 mm / h. The unit of the current liquid level is mm (millimeter), and the value range can be 22 mm-29 mm, for example, it can be 25 mm.

[0061] In some embodiments, the method of determining that the real-time data of the shoulder-growing stage satisfies the preset condition can comprise:

[0062] Step one, based on the current crystal weight, obtain the corresponding crucible position protection range interval in the second configuration table.

[0063] Specifically, the second configuration table comprises a mapping relationship between the crystal weight and the crucible position protection range interval. The second configuration table can be obtained by reverse reasoning according to actual needs, and the specific form is not limited in the embodiments of the present application. In the second configuration table, the crystal weight is embodied in the form of a range value, for example, the crystal weight interval [0, 1) corresponds to a crucible position protection range interval [0, 1.2), the unit of the crystal weight is kg (kilogram), and the unit of the crucible position protection range interval is mm (millimeter). According to the current crystal weight, the corresponding crystal weight interval is obtained from the second configuration table, and the crucible position protection range interval corresponding to the crystal weight interval is determined as the crucible position protection range interval corresponding to the current crystal weight.

[0064] Exemplarily, the second configuration table can refer to the following Table 1 example.

[0065] Table 1: Second configuration table

[0066]

[0067]

[0068] Step two, based on the current crucible position and the shoulder-growing start crucible position, obtain a crucible position difference value, and determine that the crucible position difference value is located in the crucible position protection range interval.

[0069] The current crucible position is of Double type. The shoulder-growing start crucible position can be obtained through a parameter acquisition system, and the unit of the shoulder-growing start crucible position is mm (millimeter), and the value range can be -100 mm-555 mm, for example, it can be 43 mm.

[0070] Specifically, the crucible position difference value is obtained by subtracting the shoulder-growing start crucible position from the current crucible position, if the crucible position difference value is located in the crucible position protection range interval, it is determined that the real-time data of the crystal and the growth equipment in the shoulder-growing stage satisfies the preset condition; if the crucible position difference value exceeds the crucible position protection range interval, it is determined that the real-time data of the crystal and the growth equipment in the shoulder-growing stage does not satisfy the preset condition.

[0071] Through the above scheme, the second configuration table is used to judge whether the crucible position is normal, which can more conveniently and accurately evaluate dynamically according to the crystal weight.

[0072] In some embodiments, the method of determining that the real-time data of the shoulder-growing stage satisfies the preset condition can further comprise:

[0073] determine that the current liquid level meets the preset liquid level range.

[0074] In some embodiments, the method of determining that the real-time data of the shoulder stage meets the preset condition can further comprise:

[0075] determine that the current crystal diameter meets the preset diameter range.

[0076] Specifically, it can be firstly determined whether the current liquid level meets the preset liquid level range, for example, the preset liquid level range can be 34mm-36mm. If the current liquid level meets the preset liquid level range, it is determined whether the current crystal diameter meets the preset diameter range, for example, the preset diameter range can be 30mm-35mm. If the current crystal diameter meets the preset diameter range, it is determined that the real-time data of the shoulder stage meets the preset condition. If the current crystal diameter does not meet the preset diameter range or the current liquid level does not meet the preset liquid level range, it is determined that the real-time data of the shoulder stage does not meet the preset condition. Exemplarily, if the current crystal diameter is less than the lower limit value of the preset diameter range, the current crystal diameter can be continuously acquired until the current crystal diameter is greater than or equal to the lower limit value of the preset diameter range, so as to meet the preset diameter range and continue to determine the current crucible position. If the current crystal diameter is greater than the upper limit value of the preset diameter range, the method of the present application embodiment is exited.

[0077] In some embodiments, the method of determining that the real-time data of the shoulder stage meets the preset condition can further comprise:

[0078] determine that the current heartbeat signal is not interrupted.

[0079] Specifically, in the case that the current heartbeat signal is not interrupted, it is determined that the real-time data of the shoulder stage meets the preset condition. In the case that the current heartbeat signal is interrupted, it is determined that the real-time data of the shoulder stage does not meet the preset condition. The step of detecting whether the current heartbeat signal is interrupted can be performed after detecting whether the current liquid level and the current crystal diameter meet the corresponding preset ranges.

[0080] Please refer to Figure 2 , Figure 2A flowchart of a real-time data detection process in the embodiment. Illustratively, it can be firstly judged whether the current liquid level meets the preset liquid level range. If the current liquid level meets the preset liquid level range, it is judged whether the current crystal diameter meets the preset diameter range. If the current crystal diameter meets the preset diameter range, the PLC remote control button of the single crystal furnace is opened and a heartbeat random number, for example, 0-200, is issued. The current heartbeat value is recorded, the last written heartbeat value is obtained from the cache, and if the current heartbeat value is inconsistent with the last written heartbeat value, a record is made. If the inconsistency continues for three times, an alarm is triggered and the PLC remote control button is closed. If the current heartbeat value is consistent with the last written heartbeat value, it is determined that the current heartbeat signal is not interrupted, and it is continued to be judged whether the current crucible position is normal. If the current crucible position is normal, it is determined that the real-time data meets the preset condition. If the current crucible position is not normal, or the current crystal diameter does not meet the preset diameter range, or the current liquid level does not meet the preset liquid level range, it is determined that the real-time data does not meet the preset condition.

[0081] The purpose of opening the PLC remote control button of the single crystal furnace is to write parameters to the single crystal furnace. If it is not opened, the parameters cannot be written to the single crystal furnace, i.e., the parameters cannot be written in. If the parameters cannot be written in, it will directly affect the execution of the method of the embodiment.

[0082] In some embodiments, before detecting whether the current liquid level meets the preset liquid level range, a judgment of the shoulder placing step can be performed. That is, in the case of determining that the current is the shoulder placing step, the subsequent step of detecting whether the current liquid level meets the preset liquid level range is continued. In the case of determining that the current is not the shoulder placing step, the PLC remote control switch is closed, and the method of the embodiment is exited, an alarm is triggered, and an "abnormal exit" mark is made for the exit of the furnace platform, so that it does not work in the next cycle.

[0083] In some embodiments, the method of the embodiment further comprises:

[0084] Determining that any real-time data of the shoulder placing stage does not meet the preset condition, triggering an alarm information.

[0085] Specifically, the alarm information can be in one or more forms such as text, voice, and light. For example, sound alarm, short message notification, and email notification can be used, and the embodiment does not make specific limitations.

[0086] Illustratively, in the case that the difference between the current crucible position and the shoulder placing starting crucible position exceeds the crucible position protection range interval, or in the case that the current liquid level does not meet the preset liquid level range, or in the case that the current crystal diameter does not meet the preset diameter range, or in the case that it is determined that the current heartbeat signal is interrupted, or in the case that any other data is judged to exceed the corresponding preset range, an alarm information can be triggered.

[0087] Exemplarily, in a case where it is determined that the real-time data does not satisfy the preset condition, an abnormal processing mechanism can also be executed, including multiple retries and / or alarm escalation. In this way, it can be ensured that the abnormal situation can be handled in time.

[0088] Through the above scheme, whether the liquid level, the diameter, the heartbeat signal, and the crucible position satisfy the preset range can be determined according to the preset order, so that the subsequent dynamic control logic is continued to be executed in a case where it is determined that the real-time data satisfies the preset condition, and thus better control effect can be achieved, and abnormal situations in the crystal growth process can also be automatically identified, and an alarm mechanism is triggered to timely notify the operator to intervene, so as to avoid production accidents.

[0089] In some embodiments, before step 101 is executed, the method of the embodiments of the present application can further include:

[0090] First, real-time data of the shoulder-growing stage is acquired, and the real-time data includes a current crystal weight, a current crucible position, a current crystal diameter, a crystal actual pulling speed, a current liquid level, a current heartbeat signal, and the like. Then, coefficient parameters are initialized, and system parameters include a preset liquid level range, a preset diameter range, a first configuration table, and a second configuration table, and the like.

[0091] It can be understood that the embodiments of the present application can dynamically adjust key parameters such as crucible lifting speed according to real-time data of the crystal growth equipment and preset configuration tables, so as to ensure the stability and consistency of the crystal growth process. Through real-time data analysis and dynamic parameter adjustment, the process parameters of the crystal growth can be optimized, the quality and production efficiency of the crystal growth can be improved, and the waste rate and resource waste can be reduced. Abnormal situations in the crystal growth process (such as liquid level abnormalities, crystal diameter fluctuations, heartbeat interruptions, and the like) can also be automatically identified, and an alarm mechanism is triggered to timely notify the operator to intervene, so as to avoid production accidents.

[0092] Step 102: On the premise that the real-time data satisfies the preset condition, shoulder-growing control data is obtained based on the real-time data.

[0093] In some embodiments, step 102 can be implemented through the following steps:

[0094] Based on the current crystal diameter and the crystal actual pulling speed, a current lifting speed value of the crucible lifting is obtained.

[0095] Specifically, the current lifting speed value of the crucible lifting can be used to represent the current lifting speed value of the growth equipment.

[0096] In some examples, based on the current crystal diameter and the crystal actual pulling speed, the current lifting speed value of the crucible lifting can be obtained through the following steps:

[0097] Step one, based on the current crystal diameter, a target coefficient value corresponding to the current crystal diameter is obtained in the first configuration table.

[0098] Specifically, the first configuration table can include a mapping relationship between the crystal diameter and the target coefficient value. The first configuration table can be obtained by reverse reasoning according to actual needs, and the specific form is not limited in the embodiments of the present application.

[0099] In some examples, the target coefficient value can include a calculation constant and an adjustment coefficient. The calculation constant is usually related to the material properties, for example, it can be calculated based on the solid silicon density, the melt silicon density, and the inner diameter of the crucible, that is, the calculation constant = solid silicon density / melt silicon density / crucible inner diameter 2 , the calculation constant is usually a constant value of 0.000001102409656, dimensionless; the adjustment coefficient is used to represent the multiple of the crucible lifting, which is usually an empirical value, and the value range can be 1-4, for example, it can be 3.1, dimensionless.

[0100] In the first configuration table, the crystal diameter can be in the form of a range value, for example, the crystal diameter interval [0, 2) corresponds to a calculation constant and an adjustment coefficient, for example, the calculation constant is 0.000001102409656, and the adjustment coefficient is 1. Specifically, the corresponding crystal diameter interval of the current crystal diameter (Double type) can be determined from the first configuration table, and the calculation constant and the adjustment coefficient corresponding to the crystal diameter interval are determined as the calculation constant and the adjustment coefficient corresponding to the current crystal diameter.

[0101] For example, the first configuration table can refer to the following Table 2 example.

[0102] Table 2: First configuration table

[0103]

[0104]

[0105] Step two, based on the current crystal diameter, the actual pulling speed of the crystal, and the target coefficient value, the current lifting speed value is obtained.

[0106] Specifically, the current lifting speed value = crystal actual pulling speed × current crystal diameter 2 × target coefficient value. In the case where the target coefficient value includes a calculation constant and an adjustment coefficient, the current lifting speed value = crystal actual pulling speed × current crystal diameter 2 × calculation constant × adjustment coefficient.

[0107] Step 103: Perform crucible lifting operation based on the shoulder control data.

[0108] In some embodiments, the crystal pulling control method can include at least one control period. Step 103 can be implemented by the following steps:

[0109] In each control cycle, the crucible lifting operation is performed based on the current lifting speed value.

[0110] Specifically, after determining the current lifting speed value of the crucible, the growth device can be controlled to move based on the current lifting speed value in each control cycle. Specifically, an adjustment instruction can be pushed to a driving device of the growth device, which is used to drive the growth device to move based on the current lifting speed value.

[0111] In some examples, when the crystal pulling control method includes at least two control cycles, before executing step 103, the crystal pulling control method of the embodiment of the present application may further include:

[0112] Obtain the historical speed-up value of the previous control cycle, and determine whether the deviation between the current speed-up value and the historical speed-up value is less than a preset threshold.

[0113] For example, the preset threshold can be set to 5 mm / h (millimeter per hour). If the absolute value of the deviation between the current acceleration value and the historical acceleration value is less than 5 mm / h, step 103 can be continued. If the absolute value of the deviation between the current acceleration value and the historical acceleration value is greater than or equal to 5 mm / h, an alarm message can be triggered. The historical acceleration value can be obtained from cached historical data.

[0114] In other examples, when the crystal pulling control method includes only one control cycle, there is no need to obtain the historical speed-up value of the previous control cycle. It is only necessary to perform the crucible lifting operation based on the current speed-up value within the control cycle.

[0115] See also Figure 3 , Figure 3 Schematic diagram of a specific process of the crystal pulling control method according to an embodiment of the present application. In some embodiments, the method according to an embodiment of the present application may further include the following steps:

[0116] Step 301: Obtain cached historical data.

[0117] Specifically, cached historical data refers to data cached in Redis (a key-value storage database). This facilitates access to historical data and improves data processing efficiency. You can cache only the furnace number, step time, cache time, and speed increase value in the historical data. For example, you can cache it in the following form: [

[0119] {

[0120] "step":"9",

[0121] "time":"2025-02-24 10:38:52",

[0122] "deviceId":"203",

[0123] "potLiftSpeed": 0.31132103638532915

[0124] } ]

[0126] Step 302: Compare real-time data and historical data to determine whether there is data corresponding to the furnace number in the historical data.

[0127] Step 303: If there is data corresponding to the furnace number in the historical data, update the historical data corresponding to the furnace number with real-time data corresponding to the furnace number.

[0128] Step 304: If there is no data corresponding to the furnace number in the historical data, cache the real-time data.

[0129] Specifically, if there is no cache data corresponding to the furnace number in the cache, the data corresponding to the furnace number is encapsulated and cached in Redis. If there is cache data corresponding to the furnace number in the cache, the real-time data corresponding to the furnace number is used to update the corresponding historical data.

[0130] Through the above scheme, it can be determined whether the cache needs to be updated by comparing real-time data and cache data. If the data changes, the cache is updated; otherwise, new cache data is added. The cache mechanism is used to store real-time data and historical data of the device, ensuring that the data can be quickly accessed and processed, thereby ensuring the rapidity and efficiency of data processing. At the same time, after processing the data of each device, the data in the cache is updated to ensure that the data in the cache is consistent with the real-time state of the device. If the data processing of the device is completed or the device no longer needs to be monitored, the cache data that is no longer needed can be automatically cleaned up, releasing system resources and improving overall operation efficiency.

[0131] In some embodiments, the method of the present application embodiment can further include the following steps:

[0132] Step 305: Create log data to record real-time data and shoulder control data through the log data.

[0133] For example, the log data can include furnace number, processing time, key parameter value, abnormal reason, etc. These log data are stored in the database for subsequent analysis and auditing.

[0134] Step 306: Store the log data.

[0135] Through the above scheme, detailed logs can be recorded in the processing process, including device ID, processing time, key parameter values, abnormal reason, etc., and these log data are stored into a database for subsequent analysis and auditing. Historical data can also be analyzed to optimize parameter settings in the crystal growth process, improving the quality and efficiency of crystal growth.

[0136] Exemplarily, a complete example flow of the crystal pulling control method of the embodiment of the present application is introduced below. After starting, the process data in the single crystal furnace can be acquired, it is judged whether the process step of the single crystal furnace is a shoulder placing process step, if it is a shoulder placing process step, the current liquid level of the single crystal furnace in the shoulder placing stage is acquired, it is judged whether the current liquid level meets the preset liquid level range, if the current liquid level meets the preset liquid level range, the current crystal diameter is acquired, it is judged whether the current crystal diameter meets the preset diameter range, if the preset diameter range is not met, the current crystal diameter of the single crystal furnace is continuously acquired until the preset diameter range is met (the diameter value starts to be executed at 30mm-35mm; greater than 35mm is exited; less than 30mm is waited); if the above conditions are all met, the PLC remote control button of the single crystal furnace is opened and a heartbeat random number (0-200) is issued, the heartbeat value written this time is recorded, the heartbeat value written last time is acquired from the cache next time, it is judged whether the two heartbeat values are the same, if they are not the same, a record is made, and after three times in succession, an alarm is given and the PLC switch button switch is closed; if the heartbeat values of the last time and the current time are consistent, the current crucible position and the current crystal weight of the single crystal furnace are acquired, and it is further judged from the second configuration table whether the current crystal weight is in a certain range, and whether the current crucible position is in the corresponding range, if the current crucible position is not in the corresponding range, the method of the embodiment of the present application is exited and the PLC switch button is closed and an alarm is given; if the current crucible position is in the corresponding range, the actual pulling speed of the crystal and the current crystal diameter are read, the calculation constant and the adjustment coefficient are determined from the first configuration table, and the target crucible lifting speed is calculated through a formula (target crucible lifting speed = actual pulling speed of crystal x current crystal diameter2x calculation constant x adjustment coefficient). Then it is judged whether ABS (current lifting speed value - historical lifting speed value) is ≥5mm / s, i.e. whether the current lifting speed value - historical lifting speed value is ≥5mm / s, if yes, the method of the embodiment of the present application is exited and the PLC switch button is closed and an alarm is given, if not, the current lifting speed value is written to the single crystal furnace, and the method of the embodiment of the present application is executed in a loop until the current crystal diameter exceeds the diameter setting range of the last row of parameters, the method of the embodiment of the present application is exited and the PLC switch button is closed and an alarm is given.

[0137] It can be understood that the method of the embodiment of the application can dynamically adjust the key parameters such as the lifting speed of the crucible according to the real-time data of the crystal and the growth equipment and the preset configuration table (such as the first configuration table, the second configuration table, etc.), ensure the stability of the crystal growth process, and automatically adjust the lifting speed of the crucible according to the change of the crystal diameter to avoid the diameter fluctuation or abnormality in the crystal growth process. In addition, the method can detect abnormal conditions in the equipment operation in real time, such as the liquid level exceeding the range, the abnormal crystal diameter, the heartbeat interruption, etc. Once the abnormality is detected, the alarm mechanism will be triggered, and the equipment will be notified to adjust through the push instruction. The abnormality processing mechanism can also be executed for the abnormality, and the abnormality processing mechanism includes multiple retries and alarm escalation, which ensures that the abnormality can be handled in time. The method can also record detailed logs in the processing process, including the device ID, the processing time, the key parameter value, the abnormal reason, etc. These log data are stored in the database for subsequent analysis and audit. The method stores the real-time data and the historical data of the equipment through the cache mechanism, ensures that the data can be quickly accessed and processed, and if the data processing of the equipment is completed or the equipment no longer needs to be monitored, the corresponding data in the cache can also be cleaned up to release resources and realize resource optimization. In addition, the historical data can also be analyzed to optimize the parameter setting in the crystal growth process and improve the quality and efficiency of the crystal growth.

[0138] Correspondingly, the embodiment of the application also provides a crystal pulling control device. Please refer to Figure 4 , Figure 4 FIG. 1 is a structural schematic diagram of the crystal pulling control device of the embodiment of the application. The device includes a data detection module 401, a data processing module 402 and a device control module 403.

[0139] The data detection module 401 is used to collect the real-time data in the shoulder placing stage and determine that the real-time data meet the preset condition.

[0140] The data processing module 402 is used to obtain the shoulder placing control data based on the real-time data on the premise that the real-time data meet the preset condition.

[0141] The device control module 403 is used to perform the crucible lifting operation based on the shoulder placing control data.

[0142] In some embodiments, the real-time data includes the current crystal diameter and the actual crystal pulling speed;

[0143] The data processing module 402 is specifically used to:

[0144] Obtain the current lifting speed value of the crucible lifting based on the current crystal diameter and the actual crystal pulling speed.

[0145] In some embodiments, the data processing module 402 is specifically used to:

[0146] Based on the current crystal diameter, a target coefficient value corresponding to the current crystal diameter is obtained in a first configuration table;

[0147] Based on the current crystal diameter, the actual crystal pulling speed, and the target coefficient value, a current speed-up value is obtained.

[0148] In some embodiments, the crystal pulling control method includes at least one control period;

[0149] The device control module 403 is specifically configured to:

[0150] In each control period, a crucible lifting operation is performed based on the current speed-up value;

[0151] In the case where the crystal pulling control method includes at least two control periods, before the crucible lifting operation based on the current speed-up value, the device control module 403 is specifically further configured to:

[0152] Obtain a historical speed-up value of the previous control period, and determine that a deviation between the current speed-up value and the historical speed-up value is less than a preset threshold.

[0153] In some embodiments, the real-time data in the shoulder placing stage includes a current crystal weight and a current crucible position;

[0154] The data detection module 401 is specifically configured to:

[0155] Based on the current crystal weight, a corresponding crucible position protection range interval is obtained in a second configuration table;

[0156] Based on the current crucible position and a shoulder placing start crucible position, a crucible position difference value is obtained, and it is determined that the crucible position difference value is located in the crucible position protection range interval.

[0157] In some embodiments, the real-time data further includes a current liquid level;

[0158] The data detection module 401 is specifically further configured to:

[0159] Determine that the current liquid level meets a preset liquid level range.

[0160] In some embodiments, the real-time data further includes a current heartbeat signal; the data detection module 401 is specifically further configured to:

[0161] Determine that the current heartbeat signal is not interrupted.

[0162] In some embodiments, the data processing module 402 is further configured to:

[0163] Determine that any real-time data in the shoulder placing stage does not meet a preset condition, and trigger an alarm information.

[0164] It can be understood that the crystal pulling control device provided by the embodiments of the present application can collect real-time data in the shoulder placing stage, and in the case that the real-time data meet the preset condition, the shoulder placing control data is dynamically obtained based on the real-time data, and the crucible lifting operation is performed by using the shoulder placing control data, thereby ensuring the stability and consistency of the crystal growth process.

[0165] Correspondingly, the embodiments of the present application also provide a crystal pulling control system. Please refer to Figure 5 , Figure 5 FIG. 1 is a structural schematic diagram of a crystal pulling control system according to an embodiment of the present application. The crystal pulling control system comprises an acquisition device 501, a processing device 502 and an action device 503.

[0166] The acquisition device 501 is configured to acquire real-time data of a crystal and a growth device in a shoulder placing stage.

[0167] The processing device 502 comprises a thread pool, and the thread pool comprises a plurality of parallel threads. Each thread is configured to determine whether the real-time data of the corresponding crystal and growth device in the shoulder placing stage meet a preset condition, and obtain shoulder placing control data of the growth device based on the real-time data.

[0168] The action device 503 is configured to control the growth device to move based on the shoulder placing control data.

[0169] That is to say, the processing device 502 can process the real-time data of a plurality of devices in parallel through the thread pool, thereby ensuring efficient processing of data of a large number of devices. Each thread can independently execute the crystal pulling control method according to the foregoing embodiments of the present application based on the real-time data of the corresponding crystal and growth device.

[0170] In some examples, the number of threads can be greater than or equal to 10. The number of threads can be determined according to actual conditions, and the embodiments of the present application do not make specific limitations in this regard.

[0171] For example, for 3072 single crystal furnaces, the acquisition device 501 can acquire real-time data once per second, the processing device 502 can create 10 threads to process the real-time data of the 3072 single crystal furnaces in parallel, and in the actual execution process, each thread sequentially processes the real-time data of a plurality of single crystal furnaces until the shoulder placing control of all 3072 single crystal furnaces is finally realized.

[0172] It can be understood that the crystal pulling control system according to the embodiments of the present application can simultaneously monitor and process real-time data of a plurality of single crystal furnaces through the multi-thread parallel processing mechanism, thereby ensuring efficient operation in a large-scale production environment. Since a set of code does not need to be deployed for each device, the deployment process can be reduced, hardware device resources can be saved, management is more convenient, and updates can be faster and more efficient. The multi-thread concurrent execution has a high execution speed, which can greatly meet the business requirements.

[0173] Correspondingly, the application also provides a computer readable storage medium, which stores a computer program, and the computer program is loaded by a processor to execute the crystal pulling control method in the foregoing application embodiments.

[0174] In the embodiments of the present application, the storage medium can be a magnetic disk, an optical disk, a Read Only Memory (ROM), or a Random Access Memory (RAM), etc.

[0175] Correspondingly, the application also provides a single crystal silicon rod. The single crystal silicon rod is prepared by using a Czochralski method preparation process, and the Czochralski method preparation process comprises the crystal pulling control method in the embodiments of the present application.

[0176] In the foregoing embodiments, the description of each embodiment has its own focus, and the parts not described in detail in a certain embodiment can be referred to the relevant description of other embodiments.

[0177] The crystal pulling control method, system and single crystal silicon rod provided in the embodiments of the present application are described in detail above, and the principles and implementation manners of the present application are described by using specific examples in this paper. The foregoing embodiment descriptions are only used to help understand the method of the present application and its core idea; meanwhile, for those skilled in the art, the specific implementation manners and application ranges will be changed according to the idea of the present application, and the foregoing description of the present application should not be understood as a limitation.

Claims

1. A crystal pulling control method, characterized in that: The crystal pulling control method comprises: collecting real-time data during the shoulder release phase, and determining that the real-time data meets a preset condition; On the premise that the real-time data satisfies the preset conditions, obtaining shoulder release control data based on the real-time data; The crucible lifting operation is performed based on the shoulder release control data.

2. The crystal pulling control method according to claim 1, characterized in that: The real-time data includes the current crystal diameter and the actual crystal pulling speed; Based on the real-time data, shoulder release control data is obtained, including: Based on the current crystal diameter and the actual pulling speed of the crystal, a current lifting speed value of the crucible is obtained.

3. The crystal pulling control method according to claim 2, characterized in that: Based on the current crystal diameter and the actual crystal pulling speed, a current lifting speed value of the crucible is obtained, including: Based on the current crystal diameter, obtaining a target coefficient value corresponding to the current crystal diameter in a first configuration table; The current speed-up value is obtained based on the current crystal diameter, the actual crystal pulling speed and the target coefficient value.

4. The crystal pulling control method according to claim 2, wherein: The crystal pulling control method includes at least one control cycle; Performing a crucible lifting operation based on the shoulder release control data includes: In each of the control cycles, performing a crucible lifting operation based on the current lifting speed value; In a case where the crystal pulling control method includes at least two control cycles, before performing the crucible lifting operation based on the current lifting speed value, the crystal pulling control method further includes: Obtain a historical speed-up value of the previous control cycle, and determine whether a deviation between the current speed-up value and the historical speed-up value is less than a preset threshold.

5. The crystal pulling control method according to claim 1, wherein: The real-time data includes the current crystal weight and the current crucible position; Determining that the real-time data meets a preset condition includes: Based on the current crystal weight, obtaining a corresponding crucible position protection range interval in the second configuration table; A crucible position difference is obtained based on the current crucible position and the shoulder release starting crucible position, and it is determined that the crucible position difference is within the crucible position protection range.

6. The crystal pulling control method according to claim 1, characterized in that: The real-time data includes the current liquid level; Determining that the real-time data meets a preset condition includes: Determine whether the current liquid level meets a preset liquid level range.

7. The crystal pulling control method according to claim 1, characterized in that: The real-time data includes a current heartbeat signal; Determining that the real-time data meets a preset condition includes: Determine that the current heartbeat signal is not interrupted.

8. The crystal pulling control method according to any one of claims 1 to 7, characterized in that: The crystal pulling control method further includes: It is determined that any real-time data in the shoulder release stage does not meet the preset conditions, and an alarm message is triggered.

9. A crystal pulling control system, characterized in that: include: Acquisition device, used to obtain real-time data of crystals and growth equipment during the shouldering stage; A processing device, comprising a thread pool, the thread pool comprising a plurality of parallel threads, each of the threads being configured to determine whether real-time data corresponding to the crystal and the growth device during the shoulder release phase satisfies a preset condition, and to obtain shoulder release control data for the growth device based on the real-time data; An action device is used to control the movement of the growing device based on the shoulder release control data.

10. A single crystal silicon rod, characterized in that: The single crystal silicon rod is prepared by a Czochralski method, and the Czochralski method includes the crystal pulling control method according to any one of claims 1 to 8.

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