Temperature calibration method

Abstract

The invention provides a temperature calibration method, and relates to the technical field of semiconductor equipment, and the temperature calibration method comprises the steps: setting n comparison process temperatures, obtaining a process result index of a reference cavity at each comparison process temperature, and obtaining an actual measurement temperature needed by a to-be-matched cavity to achieve the same process result index, obtaining n actually measured temperatures corresponding to the comparison process temperatures; based on the Planck black body radiation law, the radiance matching ratio of each comparison process temperature to the corresponding actually-measured temperature is calculated, and a relation model between the radiance matching ratio and the actually-measured temperature is established; and for any actually measured temperature of the to-be-matched cavity, a corresponding radiance matching ratio is obtained through interpolation based on the relation model, and the calibrated temperature of the to-be-matched cavity is calculated by using the radiance matching ratio obtained through interpolation. According to the method, the consistency of process result indexes among the process cavities is improved, and the influence of factors such as internal mechanical assembly difference of the process cavities and a temperature field-flow field coupling effect on a temperature measurement result is reduced.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor equipment, in particular to a temperature calibration method. BACKGROUND

[0002] In the running process of semiconductor equipment, real-time monitoring of substrate temperature is a key link to ensure process quality. Temperature measurement technology is mainly divided into two categories: contact type and non-contact type. Contact type measurement mainly uses thermal resistance, thermocouple and other sensors; non-contact type measurement includes fluorescence temperature measurement, infrared temperature measurement and other technical means. Among them, infrared temperature measurement technology is widely used in the field of semiconductor equipment temperature monitoring due to its non-contact, fast response and other advantages.

[0003] In a semiconductor manufacturing system, a semiconductor equipment usually contains multiple independent process chambers, which requires the configuration of multiple infrared temperature meters for synchronous temperature monitoring of each process chamber to realize real-time acquisition of temperature parameters of each process chamber. However, the measurement accuracy of the infrared temperature meter is affected by multiple parameters, including the radiation rate of the measured object, the measurement distance, the sensor position and the field of view range. Therefore, before the semiconductor equipment is put into use, the infrared temperature meter must be initially calibrated.

[0004] It is worth noting that during the processing of the substrate, due to the existence of complex factors such as mechanical assembly differences, temperature field-flow field coupling effects in each process chamber, even under the same process conditions, relying only on the initially calibrated infrared temperature meter may still cause deviations in the process result indicators between different process chambers, resulting in the inconsistency of the process results of different process chambers in the same type of semiconductor equipment cannot meet the expected, thereby affecting the quality stability of the semiconductor product. SUMMARY

[0005] The purpose of the present application is to provide a temperature calibration method for solving the problem that relying only on the initially calibrated infrared temperature meter may still cause deviations in the process result indicators between different process chambers.

[0006] In order to achieve the above purpose, the present application realizes by the following technical scheme:

[0007] A temperature calibration method for a semiconductor equipment, the semiconductor equipment comprising a reference chamber and a chamber to be matched, comprising the following steps:

[0008] Setting n comparison process temperatures, obtaining process result indicators of the reference chamber at each comparison process temperature, and obtaining measured temperatures required by the chamber to be matched to achieve the same process result indicators, thereby obtaining n measured temperatures corresponding to each comparison process temperature, wherein n≥2;

[0009] Based on Planck blackbody radiation law, the emissivity matching ratio of each comparison process temperature and the corresponding measured temperature is calculated respectively, and a relationship model between the emissivity matching ratio and the measured temperature is established;

[0010] For any measured temperature of the cavity to be matched, the corresponding emissivity matching ratio is obtained by interpolation based on the relationship model, and the calibration temperature of the cavity to be matched is calculated using the emissivity matching ratio obtained by interpolation.

[0011] In some embodiments, before obtaining the process result indicators of the reference cavity at each comparison process temperature respectively, the following steps are further included:

[0012] The temperature measuring instruments of the reference cavity and the cavity to be matched are initially calibrated using a temperature standard gauge, to obtain a first emissivity correction ratio ε1 of the temperature measuring instrument of the reference cavity and a second emissivity correction ratio ε2 of the temperature measuring instrument of the cavity to be matched.

[0013] In some embodiments, the i-th comparison process temperature in the n comparison process temperatures is T i , the i-th measured temperature corresponding to the i-th comparison process temperature is T i , and the calculation formula of the corresponding emissivity matching ratio M i is:

[0014]

[0015] Where h is Planck's constant, c is the speed of light, λ is the temperature measurement wavelength, k is the Boltzmann constant, ε1 is the first emissivity correction ratio, and ε2 is the second emissivity correction ratio.

[0016] In some embodiments, the step of obtaining the corresponding emissivity matching ratio based on the relationship model for any measured temperature of the cavity to be matched, and calculating the calibration temperature of the cavity to be matched using the emissivity matching ratio obtained by interpolation includes:

[0017] For any measured temperature T k of the cavity to be matched, the corresponding emissivity matching ratio M k is obtained by interpolation based on the relationship model, and the calibration temperature T k of the cavity to be matched is calculated by substituting the emissivity matching ratio M k obtained by interpolation into the following formula:

[0018]

[0019] Where h is Planck's constant, c is the speed of light, λ is the temperature measurement wavelength, k is the Boltzmann constant, ε1 is the first emissivity correction ratio, and ε2 is the second emissivity correction ratio.

[0020] In some embodiments, the temperature measuring instrument of the reference cavity and the temperature measuring instrument of the cavity to be matched are both infrared temperature measuring instruments with a wavelength range of 2.3-2.7 μm.

[0021] In some embodiments, when the temperature measuring instrument of the reference cavity and the temperature measuring instrument of the cavity to be matched are initially calibrated by using the temperature standard gauge, the total heating power of the reference cavity and the total heating power of the cavity to be matched are kept consistent.

[0022] In some embodiments, the process result index is the growth rate of the thin film.

[0023] In some embodiments, the relationship model is a linear regression model, and the linear regression model fits a global linear relationship between the emissivity matching ratio and the measured temperature by using the least square method.

[0024] In some embodiments, the relationship model is a piecewise linear model, and the piecewise linear model divides temperature intervals and independently fits a linear relationship between the emissivity matching ratio and the measured temperature in each temperature interval; the temperature intervals are divided according to a preset temperature interval d, and d=5m is satisfied, where m is an integer and 1≤m≤10.

[0025] In some embodiments, the range of the contrast process temperature of the reference cavity is 400-1200℃.

[0026] Compared with the prior art, the present application has the following advantages:

[0027] Firstly, the present application effectively solves the problem that the deviation of the process result index between different process cavities may still exist after the initial calibration of the infrared temperature measuring instrument only by introducing the contrast calibration mechanism of the reference cavity and the cavity to be matched; this method significantly improves the consistency of the process results between different process cavities in the same type of semiconductor equipment, and provides a strong guarantee for the stability and reliability of the semiconductor manufacturing process.

[0028] Secondly, based on the Planck blackbody radiation law, the present application realizes the accurate calibration of any measured temperature of the cavity to be matched by establishing a relationship model between the measured temperature and the emissivity matching ratio; this innovative method significantly reduces the influence of factors such as the mechanical assembly difference of the cavity, the temperature field-flow field coupling effect, etc. on the temperature measurement result, and provides more accurate data support for the process temperature control, which helps to accurately control the thin film deposition process on the substrate surface and ensures the quality stability of the semiconductor products. BRIEF DESCRIPTION OF DRAWINGS

[0029] In order to more clearly illustrate the technical solutions of the present application, the drawings required in the description will be briefly introduced as follows: obviously, the drawings in the following description are an embodiment of the present application, and other drawings can also be obtained by those skilled in the art without creative labor.

[0030] Figure 1 A structure schematic diagram of a semiconductor device provided for an embodiment of the present application is shown in FIG. 1.

[0031] Figure 2 A structure schematic diagram of an epitaxial cavity provided for an embodiment of the present application is shown in FIG. 2.

[0032] Figure 3 A flow chart of a temperature calibration method provided for an embodiment of the present application is shown in FIG. 3.

[0033] Figures 1 to 3 The following reference signs are included in the description:

[0034] Reference cavity 1', cavity to be matched 1, transmission module 2, load lock cavity 3, device front end module 4.

[0035] Upper inner liner 100, heating assembly 101, lower temperature detector 102, upper flange 103, substrate 104, pedestal 105, exhaust port 106, lower flange 107, lower dome 108, rotating support shaft 109, support bracket 110, pin 111, lower inner liner 112, gas inlet 113, upper temperature detector 114, preheating ring 115, upper dome 116. DETAILED DESCRIPTION

[0036] The present application will be further described below in conjunction with the drawings and specific embodiments. The advantages and features of the present application will be more apparent from the following description. It should be noted that the drawings are greatly simplified and all use non-precise proportions, only to facilitate, clear to assist in the description of the purpose of the embodiments of the present application. In order to make the purpose, features and advantages of the present application more apparent and easy to understand, please refer to the drawings. It should be noted that the structure, proportion, size, etc. shown in the drawings attached to the present specification, are only used to cooperate with the content disclosed in the specification, so that those skilled in the art can understand and read, and are not used to limit the conditions of the implementation of the present application, therefore, any modification of the structure, change of the proportion relationship or adjustment of the size, without affecting the effect and purpose that can be produced by the present application, should still fall within the scope of the technical content disclosed by the present application.

[0037] In actual semiconductor production process, although each process cavity of the same model adopts the same structure design, due to the specific structure error, transmittance difference and temperature field-flow field coupling and other complex factors in the process cavity, under the same process condition, the process result index of each process cavity of the same model will still have certain difference. In order to improve the consistency of the process result index of each process cavity of the same model under the same process condition, it is necessary to calibrate the temperature detector of each process cavity of the same model.

[0038] Please refer toFigure 1 , Figure 1 A schematic diagram of a semiconductor device is shown, which includes an equipment front end module 4 (EFEM), a load lock chamber 3, a transfer module 2 (TM) and several process chambers (PM), among which one is selected as a reference chamber 1' and the rest are to-be-matched chambers 1. The equipment front end module 4 is connected to the transfer module 2 through the load lock chamber 3, and the equipment front end module 4 is coupled to one or more containers on the opposite side of the load lock chamber 3, which are usually front opening unified pods (FOUPs) entering from a clean room; the transfer module 2 is coupled to the load lock chamber 3, and the load lock chamber 3 maintains a vacuum condition. The transfer module 2 is built-in with a mechanical arm for transferring a substrate between the load lock chamber 3 and the process chambers (the reference chamber 1' and the to-be-matched chambers 1). The several process chambers are coupled to the transfer module 2. The process chambers can be used to perform processes related to the substrate, and the process chambers include but are not limited to chemical vapor deposition chambers, physical vapor deposition chambers, epitaxial chambers, etching chambers, thermal oxidation chambers, thermal nitridation chambers, etc.

[0039] It should be noted that the temperature calibration method of the present application can not only match each process chamber of the same type in the same semiconductor device, but also match each process chamber of the same type between different semiconductor devices; thereby reducing the deviation of the process result indicators of each process chamber of the same type under the same process conditions, and making the consistency of the process results of each process chamber of the same type reach the expectation.

[0040] Among them, one process chamber of the same type to be calibrated needs to be selected by a person skilled in the art as a reference chamber 1', and the rest are to-be-matched chambers 1, which can be calibrated by the reference chamber 1.

[0041] For example, the temperature calibration method of the present application can be used to calibrate the temperature measuring instruments of each epitaxial chamber of the same type; please refer to Figure 2 , Figure 2A schematic view of a single epitaxial chamber is shown, the epitaxial chamber includes an upper dome 116 and a lower dome 108, both of which are made of quartz, and the upper dome 116 and the lower dome 108 enclose a sealed cavity; a susceptor 105 for carrying a substrate 104 is arranged in the epitaxial chamber; heating assemblies 101 are arranged at the top and the bottom of the epitaxial chamber, the heating assemblies 101 provide heat energy to the epitaxial chamber by infrared radiation, and the process temperature in the epitaxial chamber is changed by controlling the power of the heating assemblies 101; an upper temperature measuring instrument 114 and a lower temperature measuring instrument 102 are arranged at the top and the bottom of the epitaxial chamber, the upper temperature measuring instrument 114 is used to monitor the temperature above the substrate 104, and the lower temperature measuring instrument 102 is used to monitor the temperature below the susceptor 105. The epitaxial chamber further includes an upper inner liner 100, a lower inner liner 112, an upper flange 103 and a lower flange 107, the upper inner liner 100 and the lower inner liner 112 are both annular bodies made of quartz and are arranged inside the upper dome 116 and the lower dome 108 respectively; the upper inner liner 100 is arranged above the lower inner liner 112, and a gas inlet 113 and an exhaust port 106 opposite to the gas inlet 113 are formed on the side of the upper inner liner 100 and the lower inner liner 112 for the process gas to pass through. The upper dome 116 is connected with the upper flange 103, and the upper dome 116 is fixed on the side wall through the upper flange 103; the lower dome 108 is connected with the lower flange 107, and the lower dome 108 is fixed on the side wall through the lower flange 107. A rotating support shaft 109, a support bracket 110 and a pin 111 are arranged below the susceptor 105, the rotating support shaft 109 is used to support the rotation and lifting of the susceptor 105, and the support bracket 110 is used to support the pin 111 when the rotating support shaft 109 is lowered, so as to separate the substrate 104 from the susceptor 105 during the transmission of the substrate 104. A preheating ring 115 is further arranged around the susceptor 105 for preheating the process gas entering the epitaxial chamber.

[0042] Please refer to Figure 3 , Figure 3 A flowchart of the temperature calibration method of the present application is shown; taking the calibration of epitaxial chambers of the same model as an example (the epitaxial chambers of the same model can be in the same semiconductor device or in different semiconductor devices), one of the epitaxial chambers of the same model is selected as a reference chamber 1', and the rest of the epitaxial chambers are matched chambers 1.

[0043] The temperature calibration method of the present application includes the following steps:

[0044] S1, set n comparison process temperatures, respectively acquire process result indicators of the reference chamber at each comparison process temperature, and acquire measured temperatures required for the matched chamber to reach the same process result indicators, thereby obtaining n measured temperatures corresponding to each of the comparison process temperatures, wherein n≥2;

[0045] For example, as shown in Table 1 below, three comparison process temperatures (610, 637, and 725) can be preset, and the process result indicators of the reference chamber at each comparison process temperature are obtained respectively. The measured temperatures (613.9, 640.4, and 726.4) required for the matching chamber to achieve the same process result indicators are also obtained, thus obtaining three sets of comparison process temperatures and their corresponding measured temperatures.

[0046]

[0047] Table 1. Comparative process temperatures of the reference chamber and the measured temperatures of the corresponding chambers to be matched

[0048] As shown in Table 1 above, before the process result indicator feedback calibration is performed, there is a certain temperature difference between the reference chamber and the chamber to be matched. This temperature difference will affect the consistency of the process result indicators, thereby causing the process results to not meet expectations.

[0049] S2. Based on Planck's blackbody radiation law, calculate the emissivity matching ratio of each comparison process temperature and the corresponding measured temperature, and establish a relationship model between the emissivity matching ratio and the measured temperature;

[0050] For example, as shown in Table 2 below, based on Planck's blackbody radiation law, the emissivity matching ratios corresponding to the three sets of process temperatures and the measured temperatures are calculated respectively; and a relationship model between the emissivity matching ratios and the measured temperatures can be established based on the three measured temperatures and the calculated corresponding emissivity matching ratios.

[0051]

[0052] Table 2. Emissivity matching ratios calculated by comparing process temperature with measured temperature in each group

[0053] S3. For any measured temperature of the cavity to be matched, obtain a corresponding emissivity matching ratio by interpolation based on the relationship model, and calculate the calibration temperature of the cavity to be matched using the emissivity matching ratio obtained by interpolation.

[0054] For example, the measured temperature of the cavity to be matched is 682.5, and the emissivity matching ratio corresponding to the measured temperature of 682.5 is obtained as 0.9834 based on the relational model interpolation. The calibration temperature of the cavity to be matched is calculated to be 680 using the emissivity matching ratio of 0.9834. After calibration through process result indicator feedback, the temperature difference between the cavity to be matched and the reference cavity can be controlled within ±1, that is, the absolute value of the temperature difference does not exceed 1.

[0055] By introducing the contrast calibration mechanism of the reference cavity and the cavity to be matched, the temperature calibration method effectively solves the problem of deviation of process result indexes between different process cavities, and improves the consistency of process results between different process cavities in the same type of semiconductor equipment.

[0056] Optionally, before acquiring the process result indexes of the reference cavity at each contrast process temperature respectively, the following steps are further included:

[0057] The temperature measuring instruments of the reference cavity and the cavity to be matched are calibrated by using the temperature standard gauge, to obtain the first emissivity correction ratio ε1 of the temperature measuring instrument of the reference cavity and the second emissivity correction ratio ε2 of the temperature measuring instrument of the cavity to be matched.

[0058] Taking an epitaxial cavity as an example, as shown in Figure 2 The top and bottom of the epitaxial cavity are both provided with an upper temperature measuring instrument 114 and a lower temperature measuring instrument 102, the upper temperature measuring instrument 114 is used to monitor the temperature above the substrate 104, and the lower temperature measuring instrument 102 is used to monitor the temperature below the susceptor 105.

[0059] We select one epitaxial cavity as the reference cavity and the rest of the epitaxial cavities as the cavities to be matched in each epitaxial cavity of the same type;

[0060] Therefore, the top and bottom of the reference cavity are respectively provided with a first upper temperature measuring instrument and a first lower temperature measuring instrument, and the top and bottom of the cavity to be matched are respectively provided with a second upper temperature measuring instrument and a second lower temperature measuring instrument.

[0061] The total heating power of the reference cavity is set as P, the reference temperature T c of the reference cavity is measured by using the temperature standard gauge, the temperature T t is measured by using the first upper temperature measuring instrument, and the first emissivity correction factor ε1' of the first upper temperature measuring instrument is calculated by using the following formula:

[0062]

[0063] Wherein, h is Planck's constant, c is the speed of light, λ is the temperature measuring wavelength, and k is the Boltzmann constant.

[0064] The measurement temperature of the first upper temperature measuring instrument is calibrated by using the first emissivity correction factor ε1';

[0065] The temperature T b is measured by using the first lower temperature measuring instrument, and the first emissivity correction ratio ε1 of the first lower temperature measuring instrument is calculated by using the following formula:

[0066]

[0067] Wherein, T t 'The measured temperature of the first upper temperature measuring instrument after calibration is T

[0068] The measured temperature of the first lower temperature measuring instrument after calibration is T

[0069] Similarly, the total heating power of the cavity to be matched is set as P (i.e. the total heating power of the cavity to be matched is consistent with the total heating power of the reference cavity), and the temperature standard gauge is used for calibration to obtain a second emissivity correction factor ε2' of the second upper temperature measuring instrument of the cavity to be matched and a second emissivity correction ratio ε2 of the second lower temperature measuring instrument. The calculation process of the second emissivity correction factor ε2' of the second upper temperature measuring instrument and the second emissivity correction ratio ε2 of the second lower temperature measuring instrument can refer to the calculation process of the first emissivity correction factor ε1' of the first upper temperature measuring instrument and the first emissivity correction ratio ε1 of the first lower temperature measuring instrument, which will not be described here.

[0070] Optionally, the i th comparative process temperature in the n comparative process temperatures is T i The i th measured temperature corresponding to the i th comparative process temperature is T i The calculation formula of the corresponding emissivity matching ratio M i is as follows:

[0071]

[0072] Wherein, h is Planck constant, c is light speed, λ is temperature measuring wavelength, k is Boltzmann constant, ε1 is the first emissivity correction ratio, and ε2 is the second emissivity correction ratio.

[0073] Optionally, the step of obtaining the calibration temperature of the cavity to be matched by using the emissivity matching ratio obtained by interpolation based on the relationship model comprises the following steps:

[0074] For any measured temperature T k ' of the cavity to be matched, the corresponding emissivity matching ratio M k is obtained by interpolation based on the relationship model. k The calibration temperature T k of the cavity to be matched is calculated by substituting the emissivity matching ratio M k obtained by interpolation into the following formula:

[0075]

[0076] Wherein, h is Planck constant, c is light speed, λ is temperature measuring wavelength, k is Boltzmann constant, ε1 is the first emissivity correction ratio, and ε2 is the second emissivity correction ratio.

[0077] Optionally, the temperature measuring instruments of the reference cavity and the cavity to be matched are infrared temperature measuring instruments with a radiation wavelength range of 2.3-2.7 μm.

[0078] Optionally, the total heating power of the reference cavity and the total heating power of the cavity to be matched are kept consistent when the temperature measuring instruments of the reference cavity and the cavity to be matched are calibrated by the temperature standard.

[0079] Preferably, the process result index is the growth rate of the thin film, and the growth rate of the thin film is the thickness of the deposited thin film on the substrate surface per unit time.

[0080] Optionally, the relationship model is a linear regression model, and the linear regression model fits the global linear relationship between the emissivity matching ratio and the measured temperature by the least square method.

[0081] Optionally, the relationship model is a piecewise linear model, and the piecewise linear model divides the temperature interval and independently fits the linear relationship between the emissivity matching ratio and the measured temperature in each temperature interval; the temperature interval is divided according to a preset temperature interval d, and d=5m, where m is an integer and 1≤m≤10.

[0082] For example, the preset temperature interval d can be 5, 10, 15, 20, 25, 30, 35, 40, 45, or 50. A smaller preset temperature interval d can make the relationship model more accurate.

[0083] Optionally, the reference cavity has a contrast process temperature range of 400-1200℃.

[0084] It should be noted that, in this article, relational terms such as first and second are merely used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply the existence of any such actual relationship or order between these entities or operations. Moreover, the terms "comprise", "include" or any other variants thereof are intended to cover non-exclusive inclusion, so that the process, method, article or equipment comprising a series of elements not only includes those elements, but also includes other elements not clearly listed, or also includes elements inherent to such process, method, article or equipment. In the absence of further restrictions, the elements limited by the sentence "comprise a ..." do not exclude the presence of other identical elements in the process, method, article or equipment comprising the elements. The various devices selected in this application (parts of the specific structure not described) are all universal standard parts or parts known to those skilled in the art, and their structures and principles are all known to those skilled in the art through technical manuals or through conventional experimental methods. In addition, the term "connection" herein means that A and B are directly connected, or that A and B are indirectly connected, such as A and B being connected through C, or even through more components such as C and D. The connection between A and B can be integral or separate, detachable or fixed. In addition, those skilled in the art will understand that although some embodiments described herein include certain features included in other embodiments but not other features, the combination of features of different embodiments is meant to be within the scope of this application and to form different embodiments. For example, in the claims, any one of the claimed embodiments can be used in any combination. The term "optional" herein means that the technical feature can be combined with or not combined with any feature in the text.

[0085] Although the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description is not intended to limit the present invention. After reading the above description, various modifications and substitutions of the present invention will become apparent to those skilled in the art. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A temperature calibration method for a semiconductor device comprising a reference cavity and a cavity to be matched, characterized in that: The following steps are involved: Set n comparison process temperatures, obtain the process result index of the reference chamber at each comparison process temperature, and obtain the measured temperature required for the matching chamber to achieve the same process result index, thereby obtaining n measured temperatures corresponding to each of the comparison process temperatures, where n ≥ 2; Based on Planck's blackbody radiation law, the emissivity matching ratio of each comparative process temperature and the corresponding measured temperature is calculated, and a relationship model between the emissivity matching ratio and the measured temperature is established; For any measured temperature of the cavity to be matched, a corresponding emissivity matching ratio is obtained by interpolation based on the relationship model, and the calibration temperature of the cavity to be matched is calculated using the emissivity matching ratio obtained by interpolation.

2. The temperature calibration method according to claim 1, wherein: Before respectively obtaining the process result indicators of the reference chamber at each comparative process temperature, the following steps are also included: The thermometer of the reference cavity and the thermometer of the cavity to be matched are initially calibrated using a temperature standard measuring tool to obtain a first emissivity correction ratio ε1 of the thermometer of the reference cavity and a second emissivity correction ratio ε2 of the thermometer of the cavity to be matched.

3. The temperature calibration method according to claim 2, wherein: The i-th comparative process temperature among the n comparative process temperatures is T i , the i-th measured temperature corresponding to the i-th comparison process temperature is T i ', then the corresponding radiance matching ratio M i The calculation formula is: Where h is Planck's constant, c is the speed of light, λ is the temperature measurement wavelength, k is the Boltzmann constant, ε1 is the first emissivity correction ratio, and ε2 is the second emissivity correction ratio.

4. The temperature calibration method according to claim 2, wherein: The step of interpolating a corresponding emissivity matching ratio based on the relationship model for any measured temperature of the cavity to be matched, and calculating the calibration temperature of the cavity to be matched using the emissivity matching ratio obtained by interpolation includes: For any measured temperature T of the cavity to be matched k ', based on the relationship model interpolation to obtain the corresponding radiation matching ratio M k , match the interpolated radiance to M k Substitute the following formula to calculate the calibration temperature T of the cavity to be matched: k : Where h is Planck's constant, c is the speed of light, λ is the temperature measurement wavelength, k is the Boltzmann constant, ε1 is the first emissivity correction ratio, and ε2 is the second emissivity correction ratio.

5. The temperature calibration method according to claim 2, wherein: The thermometer of the reference cavity and the thermometer of the cavity to be matched are both infrared thermometers with a radiation wavelength range of 2.3 to 2.7 μm.

6. The temperature calibration method according to claim 2, wherein: When the temperature measuring instrument of the reference cavity and the temperature measuring instrument of the cavity to be matched are initially calibrated using a temperature standard measuring instrument, the total heating power of the reference cavity and the total heating power of the cavity to be matched are kept consistent.

7. The temperature calibration method according to claim 1, wherein: The process result indicator is the growth rate of the thin film.

8. The temperature calibration method according to claim 1, wherein: The relationship model is a linear regression model, and the linear regression model fits the global linear relationship between the emissivity matching ratio and the measured temperature through the least squares method.

9. The temperature calibration method according to claim 1, wherein: The relationship model is a piecewise linear model, which divides the temperature interval into sections and independently fits the linear relationship between the emissivity matching ratio and the measured temperature in each temperature interval; the temperature interval is divided according to a preset temperature interval d, and satisfies d=5m, where m is an integer and 1≤m≤10.

10. The temperature calibration method according to claim 1, wherein: The comparison process temperature of the reference chamber ranges from 400 to 1200°C.

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