Method for processing substrate for semiconductor packaging

Abstract

The invention relates to a processing method of a substrate for semiconductor packaging, which comprises the following steps of: carrying out local hot pressing on an abnormal warping area of the substrate so as to carry out warping improvement on the substrate in time, so that the problem that a circuit is damaged in a large area due to the fact that an integral pressing process needs to be carried out when a final product is formed can be avoided.

Description

TECHNICAL FIELD

[0001] The present invention relates to a semiconductor packaging process, and more particularly to a processing method of a substrate for semiconductor packaging. BACKGROUND

[0002] With the development of electronic industry, the substrate industry for semiconductor packaging is also developing, and the packaging industry has higher requirements for the substrate. Nowadays, the substrate needs to develop in two directions of thinner and more layers, and both directions will have more impact on the warpage of the substrate. Therefore, in order to control the warpage of the substrate for the packaging factory, the warpage of the shipped substrate also needs to be reduced as much as possible.

[0003] There are many factors that affect the warpage of the substrate, such as material, stacking structure, residual copper rate, etc., but based on the customized needs, the main means to improve the warpage of the substrate is in the process control.

[0004] Currently, the main factor causing the warpage of the substrate in the process is stress residue, such as residual thermal stress and residual mechanical stress. Therefore, in order to improve the warpage when shipping, the industry will perform a plate pressing operation on the shipped substrate, but this method will damage the appearance of the substrate, causing copper material damage on the surface of the substrate, surface treatment structure damage, color difference, and even some stress is still not eliminated, resulting in more serious warpage of the substrate.

[0005] Therefore, how to overcome the various problems caused by the existing plate pressing operation has become a pressing issue to be solved. SUMMARY

[0006] The present invention aims to provide a processing method of a substrate for semiconductor packaging to solve at least one of the above problems.

[0007] In view of the various defects of the prior art, the present invention provides a processing method of a substrate for semiconductor packaging, comprising: performing a conventional processing process on at least one target object, wherein the target object defines a plurality of shipping units and a peripheral portion connecting each shipping unit; performing a measurement and analysis operation to collect the height presentation condition of the target object as initial data, and performing warpage analysis and recording on the initial data to obtain advanced data including warpage condition, wherein the initial data includes the height values of the target object, each shipping unit and the peripheral portion relative to a platform surface; performing a flattening operation to use a plurality of pressing heads to perform local hot pressing on abnormal warpage areas according to the advanced data; and performing a flattening operation to perform a measurement and analysis operation on the target object after the flattening operation to compare and analyze the warpage improvement of the target object and each shipping unit to obtain target data.

[0008] In one embodiment of the aforementioned processing method, the target object and each of the shipping units are subjected to a coding operation, or the method further comprises a coding operation, such that the target object and each of the shipping units have a mark or a barcode, such as a 2D barcode specification. This facilitates the flattening operation based on the mark or the barcode on the target object and each of the shipping units and corresponding advanced data.

[0009] In one embodiment of the aforementioned processing method, the warping condition comprises a warping degree of the target object, each of the shipping units, and the peripheral portion.

[0010] In one embodiment of the aforementioned processing method, the warping degree comprises a maximum warping degree of the target object, a maximum warping degree of each of the shipping units, or a maximum warping degree of the peripheral portion, which is obtained by subtracting a minimum value from a maximum value of a height value.

[0011] In one embodiment of the aforementioned processing method, the warping condition defines a plurality of warping levels to classify the warping degree of the target object, each of the shipping units, and the peripheral portion into corresponding warping levels. For example, the plurality of warping levels comprises a low warping level, a medium warping level, and a high warping level.

[0012] In one embodiment of the aforementioned processing method, the flattening operation adjusts a hot-pressing temperature and a pressure of a pressing head corresponding to each of the shipping units according to the corresponding warping level.

[0013] In one embodiment of the aforementioned processing method, the warping improvement condition comprises at least one selected from a group consisting of an improvement condition of a maximum warping degree of the target object and each of the shipping units, a coordinate position change condition of a maximum warping, a distribution area of a medium warping level, and an average value of a warping degree, wherein the medium warping level is 80% of an extreme warping amount to 60% of the extreme warping amount.

[0014] In one embodiment of the aforementioned processing method, the shipping unit has a circuit.

[0015] In one embodiment of the aforementioned processing method, the shipping unit defines a plurality of carrier boards.

[0016] In one embodiment of the aforementioned processing method, the conventional processing process comprises a thermal process.

[0017] In one embodiment of the aforementioned processing method, the pressing head is made of a flexible material resistant to heat of 300°C. In one embodiment, the material forming the pressing head is a silicon rubber resistant to heat of 300°C.

[0018] In one embodiment of the aforementioned processing method, the size and position of the pressing head correspond to the size and position of the shipping unit.

[0019] In a specific embodiment of the aforementioned processing method, the target data is used to improve the process for the next batch of target objects, as parameters for the local hot pressing of the flattening operation.

[0020] As can be seen from the above, in the processing method for the substrate for semiconductor packaging, the flattening operation is mainly used to perform local hot pressing on the abnormal warping area, such as on each of the shipment units, to immediately improve the warping of the shipment units, so that compared with the prior art, the processing method of the present application can avoid the problem of large-area damage to the appearance of the carrier plate caused by the overall pressing process during the final product forming. BRIEF DESCRIPTION OF DRAWINGS

[0021] Figure 1 The figure is a flowchart of the processing method for the substrate for semiconductor packaging of the present application.

[0022] Figure 2 The figure is a plan view of the target object processed by the processing method of the present application.

[0023] Figure 3 The figure is a plan view of another embodiment of the target object processed by the processing method of the present application.

[0024] Figure 4A And Figure 4B The figure is a partial perspective view of the process of the flattening operation of the processing method of the present application.

[0025] The reference signs are as follows:

[0026] 1 target object

[0027] 20, 40 shipment unit

[0028] 21 peripheral portion

[0029] 30 carrier plate

[0030] 41, 42, 43, 44 pressing head

[0031] S11 first step

[0032] S12 second step

[0033] S13 third step

[0034] S14 fourth step

[0035] S15 fifth step DETAILED DESCRIPTION

[0036] The embodiments of the present application will be described below by specific embodiments, and those skilled in the art can easily understand other advantages and effects of the present application from the disclosure.

[0037] It is to be understood that the structures, proportions, sizes, etc. shown in the drawings accompanying the present specification are merely intended to facilitate the understanding of the content disclosed by the present specification for the understanding and reading of those skilled in the art, and are not intended to limit the conditions for implementing the present application, and therefore do not have technical significance. Any modification of the structure, change of the proportional relationship, or adjustment of the size, without affecting the effects and purposes that can be achieved by the present application, should still fall within the scope of the technology disclosed by the present application. Meanwhile, the terms such as "upper", "first", "second", "one", etc. cited in the present specification are only for the convenience of clear description, and are not intended to limit the scope of the present application, and the change or adjustment of the relative relationship without substantial change of the technical content is also considered as the scope of the present application.

[0038] Figure 1 Flowchart of the processing method of the substrate for semiconductor packaging of the present application.

[0039] As Figure 1 shown, first, in the first step S11, the coding operation is performed on at least one target object 1 and each of the shipment units 20 as Figure 2 shown, so that the target object and each of the shipment units have a mark or a barcode, such as a 2D barcode specification. Thereby, the flattening operation is facilitated according to the mark or the barcode on the target object and each of the shipment units and the corresponding advanced data.

[0040] In the present embodiment, the target object 1 is a full-surface substrate for semiconductor packaging, which defines a plurality of shipment units 20 and a peripheral portion 21 connecting each of the shipment units 20.

[0041] For example, the shipment unit 20 can include a plurality of carrier boards 30 having lines, as Figure 3 shown, and the form of the carrier board 30 can be a circuit board with a core layer, a circuit structure in a coreless form, a silicon interposer (TSI) with a conductive through-silicon via (TSV), a lead frame, a wafer, or other board bodies with metal routing, etc., without particular limitation.

[0042] In the second step S12, the good target object 1 in the first step S11 is selected for the conventional processing technology.

[0043] In this embodiment, the conventional processing includes thermal processes, such as creating a solder mask or creating other structures. For example, a solder mask such as a green solder mask is formed on each of the carrier boards 30. It should be understood that the conventional processing can also include additional layering processes, surface treatment processes, or other processes as needed.

[0044] In the third step S13, a measurement analysis operation is performed to collect the height profile of the target object 1 as initial data after the completion of the processes (e.g., thermal processes) in the conventional processing of the second step S12 that affect the warpage condition, by performing a three-dimensional height measurement or a three-dimensional height imaging of the surface of the target object 1 with respect to a reference surface, such as a platform. The area used to collect the initial data can include the target object 1 (i.e., the entire surface of the substrate), the edge area and the center area of the shipping unit 20, i.e., the initial data includes the height values of the target object, the shipping units, and the peripheral portion with respect to the surface of the platform. Then, the 2D barcode is scanned by the analysis device to perform warpage analysis and record the initial data, and to obtain further data including the warpage condition.

[0045] In this embodiment, the warpage condition is the warpage of any area on the target object. For example, the warpage includes the maximum warpage of the target object obtained by subtracting the lowest point from the highest point of the height values of the target object, the maximum warpage of the shipping units obtained by subtracting the lowest point from the highest point of the height values of the shipping units, or the maximum warpage of the peripheral portion obtained by subtracting the lowest point from the highest point of the peripheral portion, and the maximum warpage of each corresponding maximum warpage is obtained as the further data, and the lowest height of the edge area (or the peripheral portion 21) of the target object 1 can also be used as the board thickness data and as further data.

[0046] Further, the analysis device has preset a limit warpage amount K (height) of the warpage condition allowed by the current process and defines a plurality of warpage levels to classify the warpage of the target object, the shipping units, and the peripheral portion into corresponding warpage levels. For example, the warpage levels include a high warpage level coefficient a (i.e., a high warpage level), a medium warpage level coefficient b (i.e., a medium warpage level), and a low warpage level coefficient c (i.e., a low warpage level), and the analysis device can perform coordinate recording and visual monitoring for a specific area (e.g., an area where warpage can occur) to obtain the area and distribution of the warpage level as further data, and display the area and distribution on a screen for monitoring and subsequent actions to improve the warpage. The limit warpage amount K represents the maximum warpage allowed by the process, and if the warpage of the analysis device exceeds this value, it is considered to be unqualified, and the product warpage level is a coefficient used to divide the warpage levels.

[0047] Further, the analysis device analyzes a warpage W of the known coordinates to determine and classify the warpage level of the region (the target object, the respective shipping unit, and the peripheral portion). When K≥|W|≥Kxa, the region of the known coordinates is a region of large warpage or a region of high warpage level. When Kxa≥|W|≥Kxb, the region of the known coordinates is a region of general warpage or a region of medium warpage level. When Kxb≥|W|≥Kxc, the region of the known coordinates is a region of small warpage or a region of low warpage level.

[0048] For example, the analysis device defines the limit warpage K as 2 mm. When the warpage W of the known coordinates exceeds 2 mm, the region of the known coordinates is unqualified. The high warpage level coefficient a, the medium warpage level coefficient b, and the low warpage level coefficient c are respectively set as 80%, 60%, and 40%. When the warpage W of the known coordinates is between 2 mm and 1.6 mm (2x80%=1.6), that is, 2≥|W|≥1.6, the region of the known coordinates is a region of large warpage or a region of high warpage level.

[0049] In the fourth step S14, a flattening operation is performed. The pressing heads 41, 42, 43, and 44 are used to locally heat-press the abnormal warpage region, as shown in FIGS. 4A and 4B. Figure 4A Figure 4B

[0050] In the present embodiment, the local improvement part of the flattening operation is matched with the complete set of modular pressing heads 41, 42, 43, and 44. The sizes and positions of the pressing heads 41, 42, 43, and 44 correspond to the sizes and positions of the respective shipping units 20 and 40, so that the pressing heads 41, 42, 43, and 44 are matched with the respective shipping units 20 and 40. The pressing heads 41, 42, 43, and 44 can be set to different output pressures. The pressing heads 41, 42, 43, and 44 can be made of, for example, silicone rubber and / or flexible material resistant to heat of 300°C. Therefore, in the local heat-pressing process, the pressing heads 41, 42, 43, and 44 will not damage the circuit on the shipping unit 20 due to the high elasticity of the material, while being able to conduct a certain amount of heat to improve the effect and efficiency of local flattening.

[0051] For example, in the local heat-pressing process, the pressing heads 41, 42, 43, and 44 are pressed onto the respective shipping units 20 and 40. A specific pressing head 41 is heated to a target temperature (for example, about 200°C). During the heating process, the pressing head 41 can appropriately increase the temperature and pressure for the shipping unit 40 (or the region of the target object 1 with excessively large warpage) with abnormal warpage W. In other words, the flattening operation adjusts the heat-pressing temperature and pressure of the pressing heads 41, 42, 43, and 44 corresponding to the respective shipping units 20 and 40 according to the respective warpage levels.

[0052] ​​In the fifth step S15, a flattening operation is performed, so that the analysis device performs a measurement analysis operation on the target object 1 subjected to the flattening operation, to compare the warping improvement of the target object 1 and each of the shipment units 20, 40, i.e., to compare the warping degree W of each of the shipment units 20, 40 with the overall warping degree W of the target object 1, to obtain target data as parameters (i.e., reference data) of the local heat pressing of the flattening operation for improving the process of the next batch of target objects, thereby effectively improving the overall warping quality of the products.

[0053] In the present embodiment, according to the warping conditions (e.g., improvement of the maximum warping degree, coordinate position change of the maximum warping, distribution area of the middle warping level, and average value of the warping degree, etc.) of the finished products of the target object 1 and each of the shipment units 20, 40, data collection is performed to compile a database containing target data for improving the parameters of the local pressing of the target objects or similar products (e.g., same stacking structure, similar copper residue rate, etc.). In a specific embodiment, the middle warping level is 80% of the limit warping amount to 60% of the limit warping amount.

[0054] For example, when the improvement of the maximum warping area is not obvious, or when the area of the region where the middle warping level (general warping degree) is distributed is not obviously reduced, the pressing head 41, 42, 43, 44 can be appropriately increased in pressure and the temperature of the pressing head 41, 42, 43, 44 can be increased to improve the warping condition. Alternatively, when the coordinate position of the maximum warping area is shifted by a large amplitude, or when the area of the region where the middle warping level (general warping degree) is distributed is expanded, the average value of the warping of the target object 1 or the shipment unit 20 is increased, thereby generating more stress, so the pressure of the pressing head 41, 42, 43, 44 should be reduced.

[0055] In summary, the processing method of the substrate for semiconductor packaging of the present application has the following advantages:

[0056] First, the measurement analysis operation (e.g., the third step S13) is performed to monitor the process (e.g., the heat process of the second step S12) affecting the warping degree W, to effectively control the warping degree W of the shipment unit 20, and to improve it in advance (e.g., the fourth step S14), thereby avoiding the problem of local accumulation of the warping shaping or deformation amount, and avoiding the situation that the overall warping amount of the final product cannot meet the standard after being formed.

[0057] Second, the flattening operation (e.g., the fourth step S14) is performed to locally improve the target object 1 or the shipment unit 40 with abnormal warping degree W, to specifically eliminate part of the stress, and to transfer the stress that cannot be eliminated to the peripheral portion 21, to maximize the improvement of the warping degree W of the shipment unit 40.

[0058] Third, the warping of the shipping unit 40 is improved by a flattening operation (e.g., the fourth step S14) to avoid the need for overall pressing during the final product forming process, which can cause large-area damage to the appearance of the target object 1 or the carrier plate 30.

[0059] Fourth, the modular pressing heads 41, 42, 43, 44 are made of silicone rubber to have high elasticity and high-temperature resistance, so that the pressing heads 41, 42, 43, 44 can conduct heat during local hot pressing, which not only improves the flattening effect, but also avoids damaging the circuit of the shipping unit 20.

[0060] Fifth, the sizes of the shipping units 20 of the current carrier plate manufacturers are roughly the same, so the modular pressing heads 41, 42, 43, 44 can be reused, and the flattening operation (e.g., the fifth step S15) is used to integrate general pressing parameters (target data) according to the warping improvement to improve the quality of the target object 1 during mass production, thereby improving production efficiency.

[0061] The above embodiments are only used to illustrate the principles and effects of the present application, and are not intended to limit the present application. Those skilled in the art can modify the above embodiments without departing from the spirit and scope of the present application. Therefore, the protection scope of the present application should be subject to the claims.

Claims

1. A method for processing a substrate for semiconductor packaging, characterized in that: include: Performing a conventional processing on at least one target object, wherein the target object defines a plurality of shipping units and a peripheral portion connecting each of the shipping units; performing a measurement and analysis operation to collect a height presentation condition of the target object as initial data, and performing a warpage analysis and recording the initial data to obtain advanced data including the warpage condition, wherein the initial data includes height values ​​of the target object, each of the shipping units, and the peripheral portion relative to a platform surface; performing a leveling operation to perform local hot pressing on the abnormally warped area using a plurality of pressing heads according to the advanced data; and An integration operation is performed to measure and analyze the target object after the leveling operation, so as to compare and analyze the warpage improvement of the target object and each of the shipping units to obtain target data.

2. The processing method according to claim 1, wherein The warping status includes displaying the warping degree of the target object, each of the shipping units, and the peripheral portion.

3. The processing method according to claim 2, characterized in that The warpage includes the maximum warpage of the target object obtained by subtracting the lowest point from the highest point of the height value of the target object, the maximum warpage of the shipping unit obtained by subtracting the lowest point from the highest point of the height value of each shipping unit, or the maximum warpage of the peripheral part obtained by subtracting the lowest point from the highest point of the peripheral part.

4. The processing method according to claim 2, characterized in that: The warping condition is defined as a plurality of warping levels to classify the warping of the target object, each of the shipping units, and the peripheral portion into corresponding warping levels.

5. The processing method according to claim 4, characterized in that: The plurality of warpage levels include a low warpage level, a medium warpage level, and a high warpage level.

6. The processing method according to claim 4, characterized in that: The leveling operation adjusts the hot pressing temperature and pressure of the pressing head corresponding to each shipping unit according to the corresponding warping level.

7. The processing method according to claim 3, wherein: The warpage improvement includes at least one selected from the group consisting of an improvement in the maximum warpage of the target object and each of the shipping units, a change in the coordinate position of the maximum warpage, a distribution area of ​​a medium warpage level, and an average value of the warpage, wherein the medium warpage level is 80% to 60% of the limit warpage amount.

8. The processing method according to claim 1, wherein: The shipping unit has a line.

9. The processing method according to claim 1, wherein: The shipping unit is defined with multiple carrier boards.

10. The processing method according to claim 1, wherein: The conventional processing technology includes a thermal process.

11. The processing method according to claim 1, wherein: The pressure head is made of a flexible material that is heat-resistant to 300°C.

12. The processing method according to claim 1, wherein: The material forming the pressure head is silicone rubber.

13. The processing method according to claim 1, wherein: The size and position of the pressure head correspond to the size and position of the shipping unit.

14. The processing method according to claim 1, wherein: The target data is used as a parameter for improving the process of the next batch of targets for the local hot pressing of the leveling operation.

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