Multi-temperature-zone heating plate for semiconductor

Abstract

The invention discloses a multi-temperature-zone heating plate for a semiconductor, and relates to the technical field of heating plates, the heating plate comprises an upper plate and a lower plate arranged at the lower end of the upper plate, and a heating stage vertical cylinder is fixed in the middle of the lower end of the lower plate; the upper plate comprises a frame and a plurality of heating area plates arranged in the frame. According to the invention, each heating zone plate realizes temperature zone control through an independent heating member and a heat insulation structure, so that the requirement of a semiconductor technology on multi-temperature zone collaborative operation is met; according to the heat insulation structure, the first cavity, the second cavity and the third cavity are evacuated through the air extracting pump through the air outlet pipe, a vacuum environment is formed to block heat transfer, heat insulation between heating area plates is achieved, when rapid cooling is needed, the air supply pump feeds low-temperature air into the first cavity through the air inlet pipe, the air sequentially flows through the second cavity and the third cavity, and the heat insulation effect is achieved. The low-temperature gas takes away heat of the heating area plate in the flowing process, and rapid cooling is achieved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of heating disc, and particularly relates to a multi-temperature-zone heating disc for semiconductor. BACKGROUND

[0002] In the field of semiconductor manufacturing, the wafer processing process has very high requirements for the precision and efficiency of temperature control.

[0003] However, the traditional partition heating disc adopts a simple partition structure, and there is significant heat conduction phenomenon between adjacent heating areas, which leads to blurred temperature zone boundaries and difficult-to-ensure temperature control precision. Especially in the process that needs to maintain the collaborative operation of multiple independent temperature zones, the heat interference problem will directly affect the product yield.

[0004] And the existing heating disc relies on natural heat dissipation to achieve cooling, and lacks an active temperature control mechanism. In the scene that needs to quickly switch the process temperature, the long cooling period seriously restricts the production efficiency and increases the idle time of the equipment.

[0005] Based on this, the present application provides a multi-temperature-zone heating disc for semiconductor, which can eliminate the drawbacks of the existing heating disc. SUMMARY

[0006] The present application aims to provide a multi-temperature-zone heating disc for semiconductor to solve the problems in the background art.

[0007] To achieve the above-mentioned purpose, the present application provides the following technical scheme: A multi-temperature-zone heating disc for semiconductor, comprising an upper disc and a lower disc arranged at the lower end of the upper disc, and a heat table stand cylinder is fixed at the middle of the lower end of the lower disc. The upper disc comprises a frame and a plurality of heating area plates arranged inside the frame, an installation groove is arranged at the lower end of each heating area plate, a heating element is arranged in the installation groove, a heat insulation structure is arranged around the installation groove in each heating area plate, adjacent heat insulation structures are separated by a partition plate, and an adsorption structure for adsorbing and fixing a wafer is further arranged in the heating area plate.

[0008] Preferably, the heat insulation structure comprises cavities one and two arranged in the heating area plate and a cavity three arranged in the frame, the cavities one and two are separated by an air separation plate, the cavities one and two are in communication with the cavity three, the cavity three is connected with the adsorption structure, the cavity one is connected with a gas supply pump through a gas inlet pipe, and the cavity two is connected with a gas extraction pump through a gas outlet pipe.

[0009] Preferably, the adsorption structure comprises a main pipe opened in the heating area plate, one end of the main pipe is connected with the cavity three, the other end of the main pipe is connected with a plurality of connecting pipes, a plurality of adsorption holes are equidistantly opened on the upper end of the heating area plate, and each adsorption hole is connected with a connecting pipe.

[0010] Preferably, the plurality of connecting pipes are mirror image distributed, the distance from the main pipe to each adsorption hole is the same, and the inner diameters of the plurality of adsorption holes are the same.

[0011] Preferably, a one-way air outlet valve is arranged at the connection position of the main pipe and the cavity three.

[0012] Preferably, the middle part of the main pipe is connected with a ventilation pipe one, the other end of the ventilation pipe one is connected with a mounting cavity, a fixing groove is opened on the upper end of the heating area plate, the mounting cavity is connected with the fixing groove through a ventilation pipe two, a cross support is fixed in the mounting cavity, an electric push rod is mounted on the upper end of the cross support, and a blocking block matched with the fixing groove is fixed on the extension end of the electric push rod.

[0013] Preferably, the heating element comprises a bottom plate and a heat-conducting plate mounted in the mounting groove, a heating wire is arranged between the bottom plate and the heat-conducting plate, the heating wire is connected with a thermocouple, the thermocouple is mounted in a mounting hole and connected with an external control system, and the mounting hole is opened on the upper end of the heating area plate.

[0014] Preferably, each heating element is controlled in an independent control mode to realize different temperatures of different heating area plates.

[0015] Preferably, a vacuum cavity is opened in the lower disc.

[0016] Compared with the prior art, the present application has the following advantages: 1、The present application realizes temperature partition control of each heating area plate through independent heating elements and heat insulation structures, meets the demand of semiconductor process for multi-temperature zone cooperative operation, the heat insulation structures form a vacuum environment through the air pump to extract the cavity one, the cavity two and the cavity three through the air outlet pipe to block the heat transfer, realize the heat insulation between the heating area plates, and when rapid cooling is needed, the air pump sends low-temperature gas into the cavity one through the air inlet pipe, the gas flows through the cavity two, the cavity three in turn, and is finally extracted by the air pump through the air outlet pipe to form a cycle, the low-temperature gas carries away the heat of the heating area plate during the flow process, and rapid cooling is realized.

[0017] 2、The mirror image symmetrical connecting pipeline ensures uniform distribution of gas to each adsorption hole, eliminates local adsorption force difference, avoids wafer warping or hidden cracking due to stress concentration, and controls the vertical movement of the blocking block driven by the push rod, controls the on-off of the air pipeline two and the fixed groove, releases the wafer through instantaneous balance of air pressure, is more efficient than the traditional vacuum breaking mode, and avoids damage to the wafer caused by mechanical clamping or air flow impact. BRIEF DESCRIPTION OF DRAWINGS

[0018] Figure 1 It is a structural schematic diagram of the present application.

[0019] Figure 2 It is a structural schematic diagram of the adsorption structure of the present application.

[0020] Figure 3 It is a structural schematic diagram of the present application Figure 1 at position A.

[0021] Figure 4 It is a structural schematic diagram of the present application Figure 1 at position B.

[0022] Figure 5 It is a structural schematic diagram of the heat insulation structure position of the present application.

[0023] Figure 6 It is a structural schematic diagram of the heating element of the present application.

[0024] Reference signs annotation: 1, upper disc; 11, heating area plate; 111, mounting hole; 112, partition plate; 12, frame; 13, adsorption structure; 131, main pipeline; 1311, one-way air outlet valve; 132, connecting pipeline; 133, adsorption hole; 134, air passage one; 135, mounting cavity; 1351, cross support; 136, air passage two; 137, fixed groove; 138, electric push rod; 139, blocking block; 14, heat insulation structure; 141, cavity one; 142, cavity two; 143, air inlet pipe; 144, air outlet pipe; 145, cavity three; 146, air isolation plate; 15, mounting groove; 2, hot table stand cylinder; 3, heating element; 301, heating wire; 302, thermocouple; 303, bottom plate; 304, heat conduction plate; 4, lower disc; 41, vacuum cavity. DETAILED DESCRIPTION

[0025] In order to make the purpose, technical scheme and advantages of the present application more clear and explicit, the present application is further described in detail below in combination with the drawings and examples.

[0026] In one embodiment, as Figures 1-6As shown, a multi-temperature zone heating disc for semiconductor includes an upper disc 1 and a lower disc 4 arranged at the lower end of the upper disc 1, and a heat table vertical cylinder 2 is fixed at the middle of the lower end of the lower disc 4; The upper disc 1 includes a frame 12 and a plurality of heating area plates 11 arranged inside the frame 12, each of the heating area plates 11 is provided with a mounting groove 15 at the lower end, and a heating element 3 is arranged inside the mounting groove 15, and a heat insulation structure 14 is arranged around the mounting groove 15 inside each of the heating area plates 11, adjacent heat insulation structures 14 are separated by a partition plate 112, and an adsorption structure 13 for adsorbing and fixing a wafer is further arranged inside the heating area plate 11 and located above the mounting groove 15.

[0027] In this embodiment, the wafer is placed on the heating area plate 11, and the adsorption structure 13 is started to stably adsorb the wafer on the heating area plate 11, then the heating element 3 is started, and the target temperature of each heating area plate 11 is set according to the requirements of the semiconductor processing technology, and the temperature of different heating area plates 11 is adjusted as needed during the processing to meet the requirements of different temperature zones in the semiconductor processing, and after the processing is completed, the heating element 3 and the adsorption structure 13 are turned off to release the wafer.

[0028] In an alternative embodiment, the heat insulation structure 14 includes a cavity one 141, a cavity two 142 arranged inside the heating area plate 11, and a cavity three 145 arranged inside the frame 12, the cavity one 141 and the cavity two 142 are separated by an air separation plate 146, the cavity one 141 and the cavity two 142 are connected with the cavity three 145, the cavity three 145 is connected with the adsorption structure 13, the cavity one 141 is connected with a gas supply pump through a gas inlet pipe 143, and the cavity two 142 is connected with a gas exhaust pump through a gas outlet pipe 144.

[0029] It should be noted that before the wafer is processed, the gas inside the cavity one 141, the cavity two 142 and the cavity three 145 is extracted by the gas exhaust pump through the gas outlet pipe 144 to form a vacuum environment, which effectively blocks the heat transfer and realizes the thermal insulation between the heating area plates 11.

[0030] When rapid cooling is needed, the gas supply pump can send low-temperature gas into the cavity one 141 through the gas inlet pipe 143, the low-temperature gas then enters the cavity two 142 and the cavity three 145, and is finally extracted by the gas exhaust pump through the gas outlet pipe 144 to form a gas circulation. The low-temperature gas flows in the cavity and carries away the heat of the heating area plates 11 to realize rapid cooling.

[0031] The heat insulation structure 14 provides a relatively independent thermal environment for each heating area plate 11, so that the heating element 3 can more accurately control the temperature of each temperature zone to meet the stringent requirements of the semiconductor processing technology on temperature accuracy.

[0032] In an alternative embodiment, the adsorption structure 13 comprises a main pipe 131 opened in the heating area plate 11, one end of the main pipe 131 is connected with the cavity three 145, the other end of the main pipe 131 is connected with a plurality of connecting pipes 132, a plurality of adsorption holes 133 are equidistantly opened on the upper end of the heating area plate 11, and each adsorption hole 133 is connected with a connecting pipe 132.

[0033] It should be noted that after the wafer is placed on the heating area plate 11, the air pump is started, and the gas in the cavities one 141, two 142 and three 145 is pumped out through the air outlet pipe 144, so as to form a negative pressure environment at the adsorption hole 133.

[0034] In an alternative embodiment, a plurality of connecting pipes 132 are mirror image distributed, the distance from the main pipe 131 to each adsorption hole 133 is the same, and the inner diameters of a plurality of adsorption holes 133 are the same.

[0035] It should be noted that the mirror image distribution of a plurality of connecting pipes 132 enables the gas to be uniformly distributed to each adsorption hole 133, ensures that the ventilation amount and adsorption force of each adsorption hole 133 are consistent, and avoids deformation or damage of the wafer caused by uneven force on the wafer. The design that the inner diameters of a plurality of adsorption holes 133 are the same avoids local insufficient or excessive adsorption force, and realizes uniform adsorption of the wafer.

[0036] In an alternative embodiment, a one-way air outlet valve 1311 is arranged at the connecting position of the main pipe 131 and the cavity three 145.

[0037] It should be noted that the one-way valve ensures that the gas can only flow in one direction, prevents external gas from flowing back to the main pipe 131, avoids fluctuation of the vacuum degree, provides the wafer with continuous and stable adsorption force, and ensures the flatness and position accuracy of the wafer during processing.

[0038] In an alternative embodiment, the middle part of the main pipe 131 is connected with the air pipe one 134, the other end of the air pipe one 134 is connected with the mounting cavity 135, the upper end of the heating area plate 11 is provided with a fixing groove 137, the mounting cavity 135 is connected with the fixing groove 137 through the air pipe two 136, a cross-shaped bracket 1351 is fixed in the mounting cavity 135, an electric push rod 138 is installed on the upper end of the cross-shaped bracket 1351, and a blocking block 139 matched with the fixing groove 137 is fixed on the extension end of the electric push rod 138.

[0039] It should be noted that the obstruction block 139 is driven to move up and down by the electric push rod 138, so as to quickly open or close the passage of the ventilation pipe 136 and the fixed groove 137, compared with the traditional vacuum breaking mode, the structure can release the wafer in a shorter time, improve the production efficiency, and release the wafer by balancing the air pressure, so as to avoid the damage to the wafer caused by mechanical clamping or air flow impact.

[0040] In an optional embodiment, the heating element 3 comprises a bottom plate 303 and a heat conduction plate 304 installed inside the mounting groove 15, a heating wire 301 is arranged between the bottom plate 303 and the heat conduction plate 304, the heating wire 301 is connected with a thermocouple 302, the thermocouple 302 is installed inside the mounting hole 111 and connected with an external control system, and the mounting hole 111 is arranged on the upper end of the heating area plate 11.

[0041] It should be noted that the heating wire 301 transmits heat to the heating area plate 11 through the heat conduction plate 304, and the thermocouple 302 is directly installed on the heating area plate 11, so as to accurately reflect the actual temperature of the heating area plate 11 in real time.

[0042] In an optional embodiment, each heating element 3 is controlled in an independent control mode, so as to realize different temperatures of different heating area plates 11.

[0043] It should be noted that the independent control can accurately control the temperature of each heating area plate 11, reduce the thermal interference between the temperature zones, and improve the temperature uniformity of the whole heating disc.

[0044] Each heating element 3 is matched with an independent thermocouple 302 as a temperature sensor, the actual temperature of the heating area plate 11 is monitored in real time, and the temperature signal is fed back to the external control system. The control system compares the actual temperature with a preset target temperature, dynamically adjusts the current of the heating wire 301 through a PID algorithm and other control strategies, forms a closed loop control, and ensures that the temperature of each temperature zone is accurately and stably set at a set value.

[0045] In an optional embodiment, the lower disc 4 is internally provided with a vacuum cavity 41.

[0046] It should be noted that the vacuum cavity 41 is located inside the lower disc 4, which separates the heating area plate 11 from the external environment, forms a physical barrier, prevents heat from being transmitted downward, reduces the heat loss of the heating area plate 11 downward, and improves the utilization efficiency of heat energy.

[0047] The working principle of the multi-temperature zone heating disc for semiconductor disclosed in the above embodiment is as follows: the wafer is placed on the heating zone plate 11, and then the air pump draws the gas in the cavity one 141, the cavity two 142 and the cavity three 145 through the air outlet pipe 144. Since the one-way air outlet valve 1311 is arranged at the connecting position of the main pipe 131 and the cavity three 145, the cavity one 141, the cavity two 142 and the cavity three 145, the main pipe 131 and the connecting pipe 132 are in a vacuum state, and at this time, the wafer is adsorbed and fixed by the adsorption holes 133; Then the heating element 3 is started, the target temperature of each heating zone plate 11 is set according to the requirement of the semiconductor processing process, the actual temperature of the heating zone plate 11 is monitored in real time by the thermocouple 302, and the power of the heating wire 301 is adjusted according to the deviation between the actual temperature and the target temperature, so as to realize the accurate control of the temperature of the heating zone plate 11. The adjacent heating elements 3 are separated by two cavity ones 141 or two cavity twos 142, forming a double-layer vacuum structure, avoiding the mutual influence of the adjacent heating elements 3, thereby avoiding affecting the adjacent heating zone plates 11, and further ensuring the stability of the temperature of the heating zone plate 11. After the processing is completed, in order to quickly reduce the temperature of the heating zone plate 11, the heating element 3 is turned off, the low-temperature gas is introduced into the cavity one 141, the cavity two 142 and the cavity three 145 through the air inlet pipe 143 by the air supply pump, and the air pump draws the gas, so as to realize the circulation of the low-temperature gas in the cavity one 141, the cavity two 142 and the cavity three 145, and take away the heat of the heating zone plate 11, thereby realizing the rapid cooling. After the processing is completed, the electric push rod 138 drives the blocking block 139 to move upwards, opens the channel of the air passage two 136 and the fixed groove 137, balances the air pressure in the mounting cavity 135 with the outside, and eliminates the vacuum negative pressure at the adsorption hole 133.

[0048] The above is only a specific embodiment of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art can easily think of changes or replacements within the technical range disclosed in the present application, which should be covered within the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims

1. A multi-temperature zone heating plate for semiconductors, characterized in that: It comprises an upper plate (1) and a lower plate (4) arranged at the lower end of the upper plate (1), wherein a hot plate vertical cylinder (2) is fixed to the middle of the lower end of the lower plate (4); The upper plate (1) includes a frame (12) and a plurality of heating area plates (11) arranged inside the frame (12), a mounting groove (15) is provided at the lower end of each heating area plate (11), a heating element (3) is installed inside the mounting groove (15), a heat insulation structure (14) is provided around the mounting groove (15) inside each heating area plate (11), adjacent heat insulation structures (14) are separated by a partition plate (112), and an adsorption structure (13) for adsorbing and fixing wafers is also provided inside the heating area plate (11), and the adsorption structure (13) is located above the mounting groove (15).

2. A multi-temperature zone heating plate for semiconductors according to claim 1, characterized in that: The heat-insulating structure (14) includes a cavity one (141) and a cavity two (142) opened inside the heating area plate (11), and a cavity three (145) opened inside the frame (12). The cavity one (141) and the cavity two (142) are separated by an air separation plate (146). The cavity one (141) and the cavity two (142) are both connected to the cavity three (145). The cavity three (145) is connected to the adsorption structure (13). The cavity one (141) is connected to the air supply pump through the air inlet pipe (143), and the cavity two (142) is connected to the air extraction pump through the air outlet pipe (144).

3. The multi-temperature zone heating plate for semiconductor according to claim 2, characterized in that: The adsorption structure (13) includes a main pipe (131) opened inside the heating area plate (11), one end of the main pipe (131) is connected to the cavity three (145), and the other end of the main pipe (131) is connected to a plurality of connecting pipes (132). A plurality of adsorption holes (133) are equidistantly opened on the upper end of the heating area plate (11), and each of the adsorption holes (133) is connected to a connecting pipe (132).

4. The multi-temperature zone heating plate for semiconductors according to claim 3, characterized in that: The plurality of connecting pipes (132) are distributed in a mirror-image manner, the distance from the main pipe (131) to each of the adsorption holes (133) is the same, and the inner diameters of the plurality of adsorption holes (133) are the same.

5. The multi-temperature zone heating plate for semiconductors according to claim 3, characterized in that: A one-way air outlet valve (1311) is provided at the connection position between the main pipeline (131) and cavity three (145).

6. The multi-temperature zone heating plate for semiconductors according to claim 3, characterized in that: The middle part of the main pipe (131) is connected to the ventilation pipe (134), and the other end of the ventilation pipe (134) is connected to the installation cavity (135). A fixing groove (137) is provided at the upper end of the heating area plate (11). The installation cavity (135) is connected to the fixing groove (137) through the ventilation pipe (136). A cross bracket (1351) is fixed inside the installation cavity (135). An electric push rod (138) is installed at the upper end of the cross bracket (1351). A blocking block (139) matching the fixing groove (137) is fixed at the telescopic end of the electric push rod (138).

7. The multi-temperature zone heating plate for semiconductors according to claim 1, characterized in that: The heating element (3) comprises a base plate (303) and a heat conducting plate (304) mounted inside the mounting groove (15); a heating wire (301) is provided between the base plate (303) and the heat conducting plate (304); the heating wire (301) is connected to a thermocouple (302); the thermocouple (302) is mounted inside a mounting hole (111) and connected to an external control system; the mounting hole (111) is provided at the upper end of the heating region plate (11).

8. The multi-temperature zone heating plate for semiconductors according to claim 1, characterized in that: Each heating element (3) is controlled in an independent control manner to achieve different temperatures of the plates (11) in different heating areas.

9. The multi-temperature zone heating plate for semiconductors according to claim 1, characterized in that: A vacuum cavity (41) is provided inside the lower plate (4).

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