A semiconductor substrate slow liquid discharge system, processing equipment and slow liquid discharge control method

Abstract

The present application relates to the technical field of semiconductor wet processing equipment, in particular to a semiconductor substrate slow liquid discharge system, processing equipment and a slow liquid discharge control method. The semiconductor substrate slow liquid discharge system provided by the present application comprises a drying container, a cleaning liquid inlet and outlet pipeline system connected to the drying container and a liquid level meter. The drying container comprises an inner container and an outer container. The liquid level meter is arranged in the inner container and comprises a gas pressure conducting component connected to a gas supply pipe for supplying gas and a differential pressure detection assembly electrically connected to a controller. The gas outlet end of the gas pressure conducting component is located at the bottom of the inner container. The differential pressure detection assembly is arranged on the gas pressure conducting component. The controller detects the pressure difference between the liquid surface of the cleaning liquid in the inner container and the gas outlet end of the gas pressure conducting component through the differential pressure detection assembly to obtain the liquid level of the cleaning liquid in the inner container. The liquid level meter is used to control the water inlet and outlet, which has high precision and is not affected by the flow factor.

Description

Technical Field

[0001] This invention relates to the field of semiconductor wet process equipment technology, and in particular to a semiconductor substrate slow drainage system, processing equipment and slow drainage control method. Background Technology

[0002] Marangoni dryers are commonly used equipment in wafer cleaning and drying processes. They utilize the Marangoni effect, which is a flow phenomenon caused by differences in liquid surface tension. When there is a difference in surface tension at the liquid surface, it will cause the liquid to flow. Through this effect, residual moisture or solvents on the wafer surface can be effectively removed, achieving a watermark-free and pollution-free drying effect.

[0003] In a typical wafer cleaning and drying process, the wafer is first immersed in a cleaning solution within a drying tank for initial cleaning. Subsequently, IPA (isopropanol) gas is introduced into the drying tank, creating an IPA gas environment above the water surface. With a slow drainage operation, the wafer gradually separates from the water surface. Because the surface tension of IPA is much lower than that of water, a surface tension gradient is generated on the sloping water surface, leading to Marangoni convection. At this point, the moisture is "drawn back" to the water surface, effectively removing moisture from the wafer surface, achieving a drying effect, ensuring no watermarks remain on the wafer surface, and meeting high cleanliness requirements.

[0004] However, in the existing technology, the drying tank is controlled by time for both water filling and drainage. The instability of the flow rate and other factors can cause the liquid level to deviate from the set position, resulting in poor drying. When the process is changed, the time needs to be recalculated, which is complicated to operate. Summary of the Invention

[0005] The purpose of this invention is to provide a slow drainage system, processing equipment, and slow drainage control method for semiconductor substrates, in order to solve the technical problems in the prior art where the drying tank is controlled by time for both water filling and drainage, which is affected by factors such as unstable flow rate, resulting in the liquid level deviating from the set position and causing poor drying. When the process changes, the time needs to be recalculated, which is complicated to operate.

[0006] In a first aspect, the present invention provides a slow drainage system for semiconductor substrates, used in semiconductor substrate processing equipment, the slow drainage system comprising: a drying container, a cleaning liquid inlet and outlet pipeline system connected to the drying container, and a level gauge;

[0007] The drying container includes an inner container and an outer container. The outer container is connected to the top outer wall of the inner container and forms an overflow collection structure with the outer wall of the inner container, so that the cleaning liquid overflowing from the inner container flows into the overflow collection structure.

[0008] The cleaning fluid inlet and outlet piping system includes an inlet pipe, a slow discharge flow path, an inner tank drain pipe, and an outer tank drain pipe. The inlet pipe is connected to the inner container and is used to inject cleaning fluid into the inner container. The slow discharge flow path is connected to the inner container and is used to discharge the cleaning fluid in the inner container to the overflow collection structure. The inner tank drain pipe is connected to the inner container and is used to discharge the cleaning fluid in the inner container. The outer tank drain pipe is connected to the outer container and is used to discharge the cleaning fluid in the overflow collection structure.

[0009] The level gauge is disposed inside the inner container and includes a pressure transmission component connected to a gas supply pipe and a differential pressure detection component electrically connected to a controller. The outlet of the pressure transmission component is located at the bottom of the inner container, and the differential pressure detection component is disposed on the pressure transmission component. The controller uses the differential pressure detection component to detect the pressure difference between the liquid level above the inner container and the outlet of the pressure transmission component to obtain the liquid level of the inner container.

[0010] In an optional embodiment, a gas supply pipe for supplying gas is also included, wherein a gas filter and a primary pressure regulating valve are provided on the gas supply pipe.

[0011] In an optional embodiment, the pneumatic transmission component is provided with a two-stage pressure regulating valve.

[0012] In an optional embodiment, the air pressure transmission component is provided with an air intake flow regulating valve.

[0013] In an optional embodiment, the air outlet end of the air pressure transmission component is provided with a beveled cut.

[0014] In an optional embodiment, a flow equalization component is provided inside the inner container, and the flow equalization component is located at the bottom of the inner container;

[0015] The air pressure transmission component passes through the flow equalization component, and the air outlet of the air pressure transmission component is located between the flow equalization component and the bottom of the inner container.

[0016] In an optional embodiment, the slow discharge flow path is connected to a second pump, a first valve, and a discharge flow meter. Both the second pump and the discharge flow meter are electrically connected to the controller, so that the controller controls the flow rate of the second pump based on the signal feedback from the discharge flow meter regarding the liquid flow rate in the slow discharge flow path.

[0017] In an optional embodiment, a flow guiding structure is provided on the outer side of the top opening of at least one side wall of the inner container, and an overflow gap is provided between the flow guiding structure and the side wall of the outer container so that the cleaning fluid overflowing from the inner container flows into the overflow collection structure through the overflow gap.

[0018] A liquid distribution device is provided above the flow guiding structure, and the liquid distribution device is provided with a distribution port. The first solution is applied to the flow guiding structure through the distribution port, and then guided to the liquid surface in the inner container through the flow guiding structure to form a first solution film.

[0019] In a second aspect, the present invention provides a semiconductor substrate processing apparatus, including the semiconductor substrate slow drainage system described in any one of the foregoing embodiments.

[0020] Thirdly, the present invention provides a slow-drainage liquid control method, implemented using the semiconductor substrate processing equipment described in the foregoing embodiments, the slow-drainage liquid control method comprising the following steps:

[0021] The first valve and the second pump are opened, and the slow discharge flow path begins to slowly discharge liquid.

[0022] During the process of liquid level drop, when the liquid level gauge detects that the liquid level has reached the first preset position, the first valve and the second pump are closed, and the first preset amount of IPA solution is injected into the application tube. The IPA solution is applied to the flow guiding structure through the application port, and then flowed to the liquid surface in the inner container through the flow guiding structure to form an IPA film.

[0023] After stopping the injection of IPA solution into the application tube, the first valve and the second pump are opened, and the slow discharge flow path continues to slowly discharge the liquid;

[0024] Each time the level gauge detects that the liquid level has reached the position for replenishing IPA solution, a second preset amount of IPA solution is injected into the application tube.

[0025] When the level gauge detects that the liquid level has reached the second preset position, the first valve and the second pump are closed.

[0026] Compared with the prior art, the technical advantages of the slow drainage system, processing equipment, and slow drainage control method for semiconductor substrates provided by the present invention are as follows:

[0027] The present invention provides a slow-drainage system for semiconductor substrates, used in semiconductor substrate processing equipment. The system includes: a drying container, a cleaning fluid inlet / outlet piping system connected to the drying container, and a level gauge. The drying container includes an inner container and an outer container. The outer container is connected to the top outer wall of the inner container and forms an overflow collection structure with the outer wall of the inner container, allowing cleaning fluid overflowing from the inner container to flow into the overflow collection structure. The cleaning fluid inlet / outlet piping system includes an inlet pipe, a slow-drainage path, an inner tank drain pipe, and an outer tank drain pipe. The inlet pipe is connected to the inner container and is used to inject cleaning fluid into the inner container. The slow-drainage path is connected to the inner container and the outer container, and is used to... The cleaning fluid in the inner container is drained to the overflow collection structure. The inner tank drain pipe is connected to the inner container and is used to drain the cleaning fluid in the inner container. The outer tank drain pipe is connected to the outer container and is used to drain the cleaning fluid in the overflow collection structure. The level gauge is installed in the inner container and includes a pressure transmission component connected to a gas supply pipe and a differential pressure detection component electrically connected to the controller. The outlet of the pressure transmission component is located at the bottom of the inner container. The differential pressure detection component is installed on the pressure transmission component. The controller uses the differential pressure detection component to detect the pressure difference between the liquid level above the liquid surface of the cleaning fluid in the inner container and the outlet of the pressure transmission component to obtain the liquid level of the cleaning fluid in the inner container.

[0028] During slow drainage of the inner container, the cleaning fluid inside flows upwards through the slow drainage path to the overflow collection structure, effectively counteracting the direct impact of gravity on the drainage rate. Simultaneously, as the cleaning fluid enters the outer container through the slow drainage path, it does not completely fill the outer container, effectively preventing siphoning and further minimizing fluctuations in drainage speed. The structural design ensures precise and stable drainage speed, avoiding errors caused by manual adjustment, thereby improving cleaning effectiveness and the stability of the subsequent drying process. A level gauge controls the inlet and outlet drainage with high accuracy, unaffected by flow rate factors.

[0029] The semiconductor substrate processing equipment provided by the present invention includes the aforementioned semiconductor substrate slow drainage system. Therefore, the technical advantages and effects achieved therefrom include those achieved by the aforementioned semiconductor substrate slow drainage system, which will not be elaborated here.

[0030] The slow-drainage liquid control method provided by the present invention is implemented using the aforementioned semiconductor substrate processing equipment. Therefore, the technical advantages and effects achieved therefrom include those achieved by the aforementioned semiconductor substrate processing equipment, which will not be elaborated here.

[0031] Other features and advantages of the present invention will be described in detail in the following detailed description section. Attached Figure Description

[0032] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0033] Figure 1 This is a schematic diagram of the semiconductor substrate processing equipment provided in an embodiment of the present invention;

[0034] Figure 2 This is a schematic diagram of the drying container structure provided in an embodiment of the present invention;

[0035] Figure 3 This is a first-view cross-sectional view of a drying container provided in an embodiment of the present invention;

[0036] Figure 4 This is a schematic diagram of the automatic opening and closing mechanism provided in an embodiment of the present invention;

[0037] Figure 5 A partially exploded view of the automatic opening and closing mechanism from a first-view perspective, provided in an embodiment of the present invention;

[0038] Figure 6 This is a partial exploded view of the automatic opening and closing mechanism from a second perspective, provided in an embodiment of the present invention.

[0039] Figure 7 This is a schematic diagram of the inner side of the automatic opening and closing mechanism provided in an embodiment of the present invention;

[0040] Figure 8 This is a partially exploded view of the inner side of the automatic opening and closing mechanism provided in an embodiment of the present invention;

[0041] Figure 9 This is a schematic diagram of the cylinder structure provided in an embodiment of the present invention;

[0042] Figure 10 This is a schematic diagram of the lifting mechanism with a carrier provided in an embodiment of the present invention;

[0043] Figure 11 This is a schematic diagram of the lifting mechanism provided in an embodiment of the present invention when it is not equipped with a carrier;

[0044] Figure 12 This is a schematic diagram of the upper structure of the vehicle support provided in an embodiment of the present invention;

[0045] Figure 13 This is a schematic diagram of the lower structure of the vehicle support provided in an embodiment of the present invention;

[0046] Figure 14 This is a schematic diagram of the exhaust manifold structure provided in an embodiment of the present invention;

[0047] Figure 15 This is a schematic diagram of the piping of a semiconductor substrate processing device provided in an embodiment of the present invention;

[0048] Figure 16 Provided for embodiments of the present invention Figure 15 Enlarged view of point A in the middle;

[0049] Figure 17 Provided for embodiments of the present invention Figure 15 Enlarged view at point B in the middle;

[0050] Figure 18 This is a schematic diagram of the lifting mechanism structure provided in an embodiment of the present invention;

[0051] Figure 19 This is a schematic diagram of the structure of the second mounting plate assembly provided in an embodiment of the present invention;

[0052] Figure 20 Provided for embodiments of the present invention Figure 19 A partial structural diagram.

[0053] Icons: 1-Main body; 11-Exhaust manifold; 111-Plant exhaust system connector; 112-Exhaust regulating plate; 113-Exhaust port; 114-First exhaust valve; 115-Second exhaust valve; 116-Third exhaust valve; 117-Fourth exhaust valve; 118-Exhaust connector; 2-Drying container; 21-Inner container; 211-Flow guiding structure; 212-Inlet pipe; 213-Inner tank drain pipe; 214-Flow equalization component; 215-Support structure; 216-Inlet connection port; 22-Outer container; 221-Overflow collection structure; 222-Outer tank drain pipe; 23-Outer tank cover; 231-Lifting perforation; 232-Detection sensor; 24-Liquid distribution device; 3-Automatic opening and closing mechanism; 31- Tank cover plate; 311-Integrated gas distribution channel; 3111-Gas connector; 312-Gas outlet; 313-Elastic sealing structure; 314-Guide component; 32-Cylinder mounting box; 321-Cylinder; 3211-Throttle valve; 3212-Position sensor; 3213-Buffer; 322-Cylinder connecting plate; 33-Guide rail mounting box; 331-Linear guide rail; 332-Guide rail connecting plate; 34-Tank cover plate; 35-Water receiving plate; 36-Gas supply pipe; 361-Gas filter; 362-First-stage pressure regulating valve; 37-Second gas pipe; 371-Fourth valve; 372-Gas heating device; 373-Flow controller; 374-Temperature sensor; 38-Tank cover connecting plate; 4-Pressure supply... System; 41-Supply pipe; 411-Fifth valve; 412-Second valve; 413-First solution flow meter; 42-First gas pipe; 421-Third valve; 43-Pressure relief valve; 44-Safety valve; 45-Replenishment pipe; 451-First pump; 452-First solution filter; 5-Slow discharge path; 51-Second pump; 52-First valve; 53-Drainage flow meter; 6-Carrier bracket; 61-Plate; 611-Support element; 612-Positioning element; 613-First perforation; 614-Positioning groove; 62-Support plate; 621-Support part; 6211-Inclined surface; 622-Column; 623-Second perforation; 7-Level gauge; 71-Pressure transmission component; 711-Secondary adjustment 712-Intake flow regulating valve; 72-Differential pressure detection component; 8-Lifting mechanism; 81-Electric slide; 811-Slider; 812-First mounting plate assembly; 813-Second mounting plate assembly; 8131-First mounting plate; 8131a-First bending plate; 8132-Second mounting plate; 8132a-Second bending plate; 8132b-Oblong hole; 8133-Third mounting plate; 8133a-Third bending plate; 8133b-First limit bolt; 8133c-Second limit bolt; 8133d-Universal bearing; 814-Tethering plate; 815-Support frame; 8151-Support component; 8151a-Support block; 8151b-Positioning block; 9-Carrier; 91-Semiconductor substrate. Detailed Implementation

[0054] The technical solution of the present invention will be clearly and completely described below with reference to the embodiments. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0055] In the description of this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0056] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0057] Furthermore, the technical solutions of the various embodiments can be combined with each other, but only if they are feasible for those skilled in the art. If the combination of technical solutions is contradictory or cannot be implemented, it should be considered that such combination of technical solutions does not exist and is not within the scope of protection claimed by this invention.

[0058] The present invention will now be described in further detail with reference to specific embodiments and accompanying drawings.

[0059] The specific structure is as follows: Figures 1 to 20 As shown.

[0060] This embodiment provides a semiconductor substrate cleaning and drying assembly for use in a semiconductor substrate processing device. The semiconductor substrate processing device includes a main body 1. The semiconductor substrate cleaning and drying assembly includes a drying container 2 connected to the main body 1 and a liquid distribution device 24 for applying a first solution. The drying container 2 includes an inner container 21 and an outer container 22. The outer container 22 is connected to the top outer wall of the inner container 21 and forms an overflow collection structure 221 with the outer wall of the inner container 21. A flow guiding structure 211 is respectively provided on the outer side of the top opening of a pair of opposite sidewalls of the inner container 21. An overflow gap is provided between the flow guiding structure 211 and the sidewall of the outer container 22 so that the cleaning liquid overflowing from the inner container 21 flows into the overflow collection structure 221 through the overflow gap. A liquid distribution device 24 is respectively provided above the pair of flow guiding structures 211, and a distribution port is provided on the liquid distribution device 24. The first solution is applied to the flow guiding structure 211 through the distribution port and then guided to the liquid surface in the inner container 21 through the flow guiding structure 211 to form a first solution film.

[0061] In this embodiment, since a liquid first solution is used to directly form a first solution film on the liquid surface inside the inner container 21 through the flow guiding structure 211, the problems of uneven diffusion of the gaseous first solution and the formation of droplets by condensation are overcome. Moreover, the film thickness uniformity is much higher than that of the gaseous first solution, effectively reducing the presence of water marks on the semiconductor substrate 91. Since the liquid first solution forms the film directly, there is no need for a phase change process, resulting in a faster response speed. At the same time, it supports a drying mode in which the semiconductor substrate 91 and the carrier are inseparable, avoiding damage to the semiconductor substrate 91 during handling. Furthermore, it is compatible with semiconductor substrates 91 of various materials, specifications, and thicknesses.

[0062] In this embodiment, the flow guiding structure 211 can be an inclined flow guiding plate, an inclined flow guiding channel, or other structures that meet the flow guiding function. The first solution can be an IPA solution or other solutions with a surface tension lower than water. The liquid dispensing device 24 can be a pipe, a tank, etc., as long as it can meet the dispensing requirements. The flow guiding structure 211 is provided on the outer side of the top opening of at least one side wall of the inner container 21, that is, the flow guiding structure 211 can be provided on the outer side of the top opening of one side wall, or the flow guiding structure 211 can be provided on the outer side of the top opening of multiple side walls respectively.

[0063] In the optional technical solution of this embodiment, a liquid storage device for storing the first solution and a liquid supply device for conveying the first solution in the liquid storage device to the liquid distribution device are also included. The liquid storage device can be a liquid storage tank, liquid storage bottle, or liquid storage container, as long as it meets the liquid storage requirements.

[0064] In the optional technical solution of this embodiment, the liquid storage device includes a pressure supply system 4 for storing the first solution, and the liquid supply device includes a supply pipe 41. The pressure supply system 4 is located outside the drying container 2 and is connected to the liquid distribution device 24 through the supply pipe 41. The supply pipe 41 is equipped with a fifth valve 411, a second valve 412, and a first solution flow meter 413. The first solution flow meter 413 is used to monitor the flow rate of the first solution during application; the fifth valve 411 is used to adjust the flow rate of the first solution; the second valve 412 is a pneumatic valve for controlling the application of the first solution. It has a simple structure, and compared with the existing bubbling method and steam method, which have the risk of combustion and explosion due to the open system and the problem of large consumption of the first solution, storing the first solution through the pressure supply system 4 can effectively solve these problems. It not only avoids evaporation and reduces the consumption of the first solution to save costs, but also improves the safety factor.

[0065] In the optional technical solution of this embodiment, the pressure supply system 4 is connected to a first gas pipe 42 for filling the pressure supply system 4 with gas. The gas maintains a predetermined pressure in the pressure supply system 4 to deliver the first solution to the liquid distribution device 24. A third valve 421 is provided on the first gas pipe 42. The third valve 421 is a valve that provides gas pressurization to the pressure supply system 4 and is normally open, so that the pressure supply system 4 always maintains the set pressure. When the second valve 412 is opened, the first solution in the pressure supply system 4 enters the liquid distribution device 24 through the liquid supply pipe 41 under the drive of gas pressure and is sprayed from the distribution port to the guide structure 211. The first solution flows evenly to the upper layer of the liquid surface along the guide plate to form a first solution film. Due to the gas pressurization, the gas environment inside the drying container 2 is avoided from being contaminated.

[0066] In the optional technical solution of this embodiment, the pressure supply system 4 is equipped with a pressure relief valve 43 and a safety valve 44. When the pressure inside the pressure supply system 4 unexpectedly exceeds the safety set value, the internal pressure will open the safety valve 44 to achieve automatic pressure relief. The closed pressure supply system 4 design + dynamic pressure relief of the safety valve 44 (response time ≤ 0.1s) prevents leakage of the first solution.

[0067] In the optional technical solution of this embodiment, the pressure supply system 4 is connected to a replenishment pipe 45 for replenishing the pressure supply system 4 with a first solution, so that the liquid level in the pressure supply system 4 is higher than the predetermined liquid level L. Along the flow direction of the first solution in the replenishment pipe 45, a first pump 451 and a first solution filter 452 are sequentially arranged on the replenishment pipe 45. Before replenishing the pressure supply system 4, the third valve 421 must be closed and the pressure relief valve 43 must be opened to perform a pressure relief operation. The first solution is drawn from the supply bottle by the first pump 451, filtered by the first solution filter 452, and then enters the pressure supply system 4, so that the liquid level in the pressure supply system 4 is higher than the predetermined liquid level L, which meets the working requirements.

[0068] In this embodiment, in an optional technical solution, the liquid distribution device 24 has multiple distribution ports along its axial direction. This ensures the application effect and uniformity. Alternatively, in this embodiment, the liquid distribution device 24 may have only one distribution port along its axial direction; in this case, the distribution port is elongated, achieving the same effect.

[0069] In this optional embodiment, the dispensing port faces outward from the top opening of the inner container 21. This effectively ensures that the first solution is applied to the flow guiding structure 211 and then flows evenly along the flow guiding structure 211 to the liquid surface inside the inner container 21 to form a first solution film.

[0070] In the optional technical solution of this embodiment, the flow guiding structure 211 is located above the top opening of the inner container 21. This effectively ensures the flow guiding effect of the flow guiding structure 211, while also preventing the first solution from becoming uneven due to excessively fast flow rate.

[0071] This embodiment is not limited to supplying liquid to the storage device by pressurizing gas; it can also supply liquid to the liquid distribution device by gravity, or it can supply liquid from the storage device to the liquid distribution device by installing a pump on the supply pipe.

[0072] In the optional technical solution of this embodiment, the semiconductor substrate cleaning and drying assembly further includes a cleaning liquid inlet and outlet pipeline system connected to the drying container 2; the cleaning liquid inlet and outlet pipeline system includes an inlet pipe 212, a slow discharge flow path 5, an inner tank drain pipe 213, and an outer tank drain pipe 222. The inlet pipe 212 is connected to the inner container 21 and is used to inject cleaning liquid into the inner container 21. The slow discharge flow path 5 is connected to the inner container 21 and the outer container 22 and is used to discharge the cleaning liquid in the inner container 21 to the overflow collection structure 221. The inner tank drain pipe 213 is connected to the inner container 21 and is used to discharge the cleaning liquid in the inner container 21. The outer tank drain pipe 222 is connected to the outer container 22 and is used to discharge the cleaning liquid in the overflow collection structure 221. In this embodiment, when the inner container 21 slowly drains the liquid, the cleaning liquid in the inner container 21 is discharged upward through the slow discharge flow path 5 into the overflow collection structure 221, effectively offsetting the direct influence of gravity on the drainage rate. At the same time, when the cleaning liquid enters the outer container 22 through the slow discharge flow path 5, the cleaning liquid will not fill the outer container 22, effectively avoiding the siphon phenomenon and further avoiding fluctuations in the drainage rate. The structural design ensures the accuracy and stability of the drainage rate, avoiding errors caused by manual adjustment, thereby improving the cleaning effect and the stability of the subsequent drying process.

[0073] In this optional embodiment, the inlet pipe 212 is disposed inside the inner container 21 and located at the bottom of the inner container 21; an inlet connection port 216 is provided on the bottom outer wall of the inner container 21, and the inlet pipe 212 is connected to the inlet connection port 216; the pipe wall of the inlet pipe 212 is provided with an inlet. Liquid enters from the bottom upwards through the inner container 21, avoiding splashing and ensuring overflow effect.

[0074] In this embodiment, multiple inlets are arranged in a row along the axial direction of the inlet pipe 212 to ensure the effectiveness and uniformity of liquid intake. Alternatively, in this embodiment, only one inlet is provided along the axial direction of the inlet pipe 212; in this case, the inlet is elongated, achieving the same effect.

[0075] In the optional technical solution of this embodiment, two rows of inlets are provided along the circumference of the inlet pipe 212, thereby improving the inlet efficiency.

[0076] In this optional embodiment, the two rows of liquid inlets face opposite sides of the bottom of the inner container 21. This avoids affecting the liquid inlet effect by having them directly facing the bottom of the inner container 21.

[0077] In the optional technical solution of this embodiment, a gap is provided between the liquid inlet pipe 212 and the bottom of the inner container 21. This further ensures the liquid inlet effect.

[0078] In the optional technical solution of this embodiment, multiple liquid inlet pipes 212 are provided, preferably two, and they are located on both sides of the inner container 21 respectively.

[0079] In an optional technical solution of this embodiment, a flow equalization component 214 is provided inside the inner container 21. The flow equalization component 214 is located at the bottom of the inner container 21 and above the liquid inlet pipe 212. The flow equalization component 214 is provided with multiple turbulence holes, which serve to turbulent the liquid inlet, ensuring the stability of the liquid surface and preventing debris from falling from above from clogging or damaging the pipe. A support structure 215 is provided at the bottom of the inner container 21, and the flow equalization component 214 is disposed on the support structure 215 to ensure the stability of the flow equalization component 214.

[0080] In the optional technical solution of this embodiment, the slow discharge flow path 5 is connected to a second pump 51, a first valve 52, and a discharge flow meter 53. Both the second pump 51 and the discharge flow meter 53 are electrically connected to the controller, so that the controller controls the flow rate of the second pump 51 based on the signal feedback from the discharge flow meter 53 regarding the liquid flow rate within the slow discharge flow path 5. In this embodiment, the controller is connected to the main body 1. During the slow discharge process, the inner tank discharge pipe 213 is closed, and the cleaning liquid in the inner container 21 begins to discharge through the slow discharge flow path 5. The first valve 52 is opened, and the discharge flow meter 53 monitors the flow rate of the cleaning liquid within the slow discharge flow path 5 in real time and feeds the data back to the controller. The controller automatically adjusts the flow rate of the second pump 51 based on the feedback information to achieve precise control of the cleaning liquid discharge speed. Compared to the prior art, which requires manual adjustment of multiple valves to control the drainage speed, this application adopts an automated control method, which improves the convenience of operation, ensures the accuracy and stability of the discharge speed, avoids errors caused by manual adjustment, and thus improves the cleaning effect and the stability of the subsequent drying process.

[0081] This embodiment is not limited to the second pump 51 and the discharge flow meter 53 working together to achieve closed-loop flow control; it can also be achieved by the regulating valve working together with the discharge flow meter 53.

[0082] It should be noted that slow drainage refers to the process of precisely controlling the drainage speed to allow the liquid level in the inner container 21 to drop slowly. This control method can maintain an appropriate contact time between the liquid level and the surface of the semiconductor substrate 91, and avoid excessively fast water flow from affecting the cleaning effect.

[0083] In the optional technical solution of this embodiment, one end of the slow discharge flow path 5 is connected to the bottom of the inner container 21, and the other end is connected to the top outer wall of the outer container 22; the outer tank drain pipe 222 is connected to the bottom of the outer container 22. The connection is convenient and the drainage effect is good.

[0084] In the optional technical solution of this embodiment, the semiconductor substrate cleaning and drying assembly further includes: an automatic opening and closing mechanism 3 disposed at the top opening of the drying container 2, and the automatic opening and closing mechanism 3 is connected to the main body 1; the automatic opening and closing mechanism 3 includes a pair of driving components and a pair of slot cover plates 31 respectively connected to the pair of driving components, the pair of driving components drive the pair of slot cover plates 31 to dock to close the top opening or to separate to open the top opening; an integrated gas distribution channel 311 is provided on the upper side of the slot cover plate 31, and a gas outlet 312 is provided on the lower side of the slot cover plate 31, and the gas outlet 312 passes through the slot cover plate 31 and is connected to the integrated gas distribution channel 311. The automatic opening and closing mechanism 3 drives the pair of slot cover plates 31 respectively through the pair of driving components to achieve closing and opening of the top opening, which is simple in structure and convenient to switch on and off.

[0085] In the optional technical solution of this embodiment, the driving component includes a cylinder 321 and a linear guide rail 331; both the cylinder 321 and the linear guide rail 331 are connected to the slot cover plate 31, and the cylinder 321 is used to drive the slot cover plate 31 to move, while the linear guide rail 331 is used to guide the movement of the slot cover plate 31. The structure is simple and the drive is stable. However, it is not limited to this; the cylinder 321 can also be replaced with a linear motor, electric cylinder, slide table, etc., or the driving component can consist only of the cylinder 321 or a linear motor, electric cylinder, slide table, etc.

[0086] Specifically, the automatic opening and closing mechanism 3 also includes a trough cover plate 34, a water receiving plate 35, and a cylinder mounting box 32 and a guide rail mounting box 33 arranged opposite to each other; the cylinder 321 is set in the cylinder mounting box 32, and a cylinder connecting plate 322 is connected to the slider 811 of the cylinder 321; the linear guide rail 331 is set in the guide rail mounting box 33, and a guide rail connecting plate 332 is connected to the slider 811 of the linear guide rail 331; a trough cover connecting plate 38 is connected between the cylinder connecting plate 322 and the guide rail connecting plate 332, and the trough cover plate 31 is connected to the lower side of the trough cover connecting plate 38; the trough cover plate 34 covers the integrated gas distribution channel 311, and one end is connected to the mating end of the trough cover plate 31, and the other end is connected to the upper side of the trough cover connecting plate 38; the two ends of the water receiving plate 35 are respectively connected to the cylinder mounting box 32 and the guide rail mounting box 33. The water receiving plate 35 is used to prevent liquid from dripping onto the equipment and causing corrosion and rust when the main equipment robot arm passes over it. In this embodiment, there is one cylinder mounting box 32 and a pair of guide rail mounting boxes 33. A bracket is installed on the guide rail mounting box 33 and the bracket is connected to the main body 1.

[0087] In this embodiment, cylinder 321 is a rodless cylinder, whose core function is to drive the opening and closing of the slot cover plate 31. A throttle valve 3211 is installed on cylinder 321, which controls the exhaust speed of cylinder 321 by adjusting the airflow rate at the exhaust port 113, thereby precisely controlling the movement speed of cylinder 321 in performing the opening or closing action. Each cylinder 321 is equipped with two throttle valves 3211, which independently control the opening and closing speeds respectively, and the operating speeds of the two cylinders 321 must be kept synchronized by adjusting their respective throttle valves 3211. A position sensor 3212 is also installed on cylinder 321 for detecting... The position of the piston in cylinder 321 is measured, providing feedback signals for the end of the stroke when the cylinder is fully open and fully closed. Cylinder 321 is also equipped with a buffer 3213, which is installed in the threaded holes at both ends of cylinder 321. Its adjusting screw presses against the slider 811 inside cylinder 321, providing a buffering and shock absorption effect to absorb impact and reduce noise when cylinder 321 moves close to the end of its opening and closing motion. At the same time, the extension and retraction of its screw can be adjusted by rotating buffer 3213, thereby achieving fine adjustment of the effective stroke of cylinder 321 (screwing in shortens the stroke, screwing out extends the stroke). The adjusted position of the end of the screw of buffer 3213 also plays a precise mechanical hard limit role.

[0088] In an optional technical solution of this embodiment, an elastic sealing structure 313 is provided at the mating end of the groove cover plate 31. This ensures the airtightness of the groove cover plate 31 when closed. The elastic sealing structure 313 can be a sealing gasket or other structure that achieves a seal through elasticity.

[0089] In an optional technical solution of this embodiment, a guide component 314 for guiding the movement of the slot cover plate 31 is provided on the lower side. The guide component 314 cooperates with the top opening to ensure the stability of the movement of the slot cover plate 31. The guide component 314 may be a guide block, a guide groove, or other components capable of performing guiding functions.

[0090] In the optional technical solution of this embodiment, a gas connector 3111 is connected to the integrated gas distribution channel 311. The integrated gas distribution channel 311 is hollow inside, and both the gas outlet 312 and the gas connector 3111 are connected to the hollow interior of the integrated gas distribution channel 311. Gas is supplied to the integrated gas distribution channel 311 through the gas connector 3111 and then ejected through the gas outlet 312. That is, the integrated gas distribution channel 311 forms a communicating vessel, and multiple gas outlets 312 can be installed on it. Preferably, multiple integrated gas distribution channels 311 are provided on each tank cover plate 31, and multiple nozzle mounting parts are provided on each integrated gas distribution channel 311. The gas outlets 312 can be selectively connected to the nozzle mounting parts as needed, and different diameters of the gas outlets 312 can be selected. Specifically, the position and diameter of the gas outlets 312 can be adjusted according to the shape and position of the carrier 9 to control the focus of hot gas drying. For positions where liquid is likely to remain or where the carrier 9 is far from the automatic opening and closing mechanism 3, a larger diameter gas outlet 312 is used and installed in the corresponding position to ensure drying efficiency.

[0091] In the optional technical solution of this embodiment, a gas supply pipe 36 is also included for providing gas. A second gas pipe 37 is connected between the gas supply pipe 36 and the tank cover plate 31, and the gas outlet 312 is connected to the second gas pipe 37. A gas filter 361 and a first-stage pressure regulating valve 362 are provided on the gas supply pipe 36. The gas filter 361 purifies the gas required by the whole machine, and the first-stage pressure regulating valve 362 is used to set the main inlet pressure in the gas supply pipe 36. A fourth valve 371 for controlling the on / off of the blowing gas and a gas heating device 372 are provided on the second gas pipe 37. The gas in the second gas pipe 37 is heated by the gas heating device 372, and the heated gas is sprayed into the drying container 2 through the gas outlet 312, thereby realizing the heating and drying of the semiconductor substrate 91. The heated gas can quickly remove the trace amount of moisture remaining on the surface of the semiconductor substrate 91, and can also effectively reduce the retention of moisture in the inner container 21, ensuring that the drying process is thorough and water-free.

[0092] In the optional technical solution of this embodiment, the second gas pipe 37 is further equipped with a flow controller 373 for monitoring and regulating the gas flow rate and a temperature sensor 374 for monitoring the gas temperature at the outlet of the gas heating device 372. The gas heating device 372, the flow controller 373, and the temperature sensor 374 are all electrically connected to the controller, so that the controller controls the start-up of the gas heating device 372 based on the signal feedback from the flow controller 373, and controls the power of the gas heating device 372 based on the signal feedback from the temperature sensor 374. The flow controller 373 precisely regulates the gas flow rate; the temperature sensor 374 detects the temperature at the outlet of the gas heating device 372 in real time and feeds the data back to the controller; the controller automatically adjusts the heating power based on the temperature feedback, forming feedback control to achieve precise temperature control. When the flow controller 373 detects that the gas flow rate is lower than the set value, the system will lock the start of the gas heating device 372 to prevent dry burning; the gas heating device 372 has a built-in over-temperature protection device, and when the internal temperature exceeds the safety threshold, the contactor automatically cuts off the power to achieve safety interlocking. The over-temperature protection device adopts existing technology and will not be described in detail here.

[0093] In this embodiment, the coordinated design of the modular automatic opening and closing mechanism 3 and the integrated gas distribution channel 311 achieves the following comprehensive advantages: First, the high integration of the opening and closing action of the tank cover 31 with the gas delivery function reduces reliance on external pipelines; second, the cooperation between the elastic sealing structure 313 and the motion guide component 314 ensures long-term sealing reliability under high-frequency opening and closing; third, the flow controller 373, the gas heating device 372, and the temperature sensor 374 form a temperature-controlled gas supply system, which is configured to dynamically adjust the gas temperature and flow rate according to preset process parameters. Due to the decoupled design of the temperature-controlled gas supply system and the cover structure, it is easy to adapt to different process gas requirements.

[0094] In this embodiment, the slow discharge path can be a pipeline, but it can also be a flow path of other structures, as long as it meets the requirements. The flow controller 373 can be a pump, valve, or other device capable of controlling the flow rate. The gas heating device 372 can be a heater, heat exchanger, or other device capable of raising the temperature of the gas.

[0095] In the optional technical solution of this embodiment, the semiconductor substrate cleaning and drying assembly further includes: a lifting mechanism 8 for lifting the carrier 9 into the drying container 2, the lifting mechanism 8 being connected to the main body 1; an outer tank cover 23 is provided on the drying container 2, the outer tank cover 23 having a top opening and a lifting through hole 231, an automatic opening and closing mechanism 3 being provided at the top opening, and the lifting mechanism 8 passing through the lifting through hole 231; a detection sensor 232 is provided on the inner side of the outer tank cover 23, and the detection sensor 232 is located on the movement path of the carrier 9; the lifting mechanism 8, the automatic opening and closing mechanism 3, and the detection sensor 232 are all electrically connected to the controller, so that the controller controls the working state of the automatic opening and closing mechanism 3 and the lifting mechanism 8 according to the opening and closing state of the automatic opening and closing mechanism 3 and the signal feedback of the detection sensor 232. When the automatic opening and closing mechanism 3 is closed and the lifting mechanism 8 is performing an upward movement, if the detection sensor 232 is blocked by the carrier 9 and detects material, the lifting mechanism 8 will immediately stop automatically. At this point, the automatic opening and closing mechanism 3 must be manually opened before the lifting mechanism 8 can continue its upward operation. This design, through a mandatory manual confirmation mechanism, prevents collisions between the carrier 9 and the automatic opening and closing mechanism 3, thus preventing debris and equipment damage. When the automatic opening and closing mechanism 3 is open, if the carrier 9 has not moved out of the detection range of the detection sensor 232 (i.e., the detection sensor 232 continuously detects material), the controller will prohibit the closing of the automatic opening and closing mechanism 3. The locking state can only be released and the closing of the automatic opening and closing mechanism 3 allowed after the lifting mechanism 8 descends out of the detection range of the detection sensor 232 or the carrier 9 is removed. This design, verified through physical space, avoids the risk of debris caused by the automatic opening and closing mechanism 3 clamping the carrier 9 when it closes. The outer container 22 is equipped with an outer tank cover 23.

[0096] In this embodiment, an upper limit sensor and a lower limit sensor can also be installed inside the drying container 2. The upper limit sensor works with the lifting mechanism 8 to limit the lifting mechanism 8 to only lift to a preset upper limit position, and the lower limit sensor works with the lifting mechanism 8 to limit the lifting mechanism 8 to only descend to a preset lower limit position.

[0097] In this embodiment, an optional technical solution also includes an alarm device electrically connected to the controller. A high-precision infrared detection sensor 232 is installed at the top opening of the drying container 2 to detect the position of the carrier 9 in real time. When the carrier 9 does not move out of the range of the detection sensor 232, the controller automatically locks the automatic opening and closing mechanism 3 to close and triggers the alarm device; if the lifting mechanism 8 does not reach the safe position, the rotation mechanism and the automatic opening and closing mechanism 3 of the semiconductor substrate cleaning and drying assembly are both disabled to avoid mechanical collision. The alarm device is an audible and visual alarm, which has a significant warning effect.

[0098] In the optional technical solution of this embodiment, the lifting mechanism 8 includes an electric slide table 81 connected to the main body 1, a first mounting plate group 812 connected to the slider 811 of the electric slide table 81, a second mounting plate group 813 connected to the end of the first mounting plate group 812 away from the slider 811, a traction plate 814 connected to the end of the second mounting plate group 813 away from the first mounting plate group 812, and a support frame 815 connected to the traction plate 814 away from the second mounting plate group 813. The traction plate 814 passes through the lifting through hole 231. The lifting mechanism 8 utilizes the existing electric slide table 81 and slider 811, driving the slider 811 to move via the electric slide table 81, thus achieving synchronous lifting and lowering of the support frame 815. When the electric slide table 81 drives the slider 811 to move up and down, the slider 811 transmits motion step by step through the first mounting plate group 812, the second mounting plate group 813, and the traction plate 814, causing the support frame 815 to rise and fall smoothly accordingly. The two opposing inner sidewalls of the support frame 815 are respectively connected to support members 8151. The support member 8151 includes a support block 8151a connected to the support frame 815 by fasteners and a positioning block 8151b connected to the support block 8151a.

[0099] The second mounting plate assembly 813 includes a first mounting plate 8131 connected to the first mounting plate assembly 812, a second mounting plate 8132 connected to one end of the first mounting plate 8131 away from the first mounting plate assembly 812, and a third mounting plate 8133 connected to one end of the second mounting plate 8132 away from the first mounting plate 8131. A tension plate 814 is connected to the third mounting plate 8133. The first mounting plate 8131 is bent on both sides to form a first bent plate 8131a, the second mounting plate 8132 is bent on both sides to form a second bent plate 8132a, and the third mounting plate 8133 is bent on both sides to form a third bent plate 8133a. The second bent plate 8132a abuts against the outside of the first bent plate 8131a. The first bent plate 8131a has multiple threaded holes, and the second bent plate 8132a has multiple elongated holes 8132b that mate with the threaded holes. The second mounting plate 8132 is bent on both sides to form a second bent plate 8132a, which is closely attached to the outer side of the first bent plate 8131a of the first mounting plate 8131. The threaded hole on the first bent plate 8131a mates with the elongated hole 8132b on the second bent plate 8132a, so that the position of the second mounting plate 8132 can be adjusted along the length direction of the elongated hole 8132b (which is the same as the length extension direction of the second mounting plate 8132). The third mounting plate 8133 is connected to the second mounting plate 8132 by multiple fasteners. The third mounting plate 8133 is threaded with multiple first limiting bolts 8133b, one end of which abuts against the second mounting plate 8132, to adjust the distance between the third mounting plate 8133 and the second mounting plate 8132. The third bent plate 8133a is threaded with multiple second limiting bolts 8133c, one end of which abuts against the outer wall of the second bent plate 8132a, to adjust the distance between the third bent plate 8133a and the second bent plate 8132a. The third mounting plate 8133 is connected to the second mounting plate 8132 by multiple fasteners, and the distance between the third mounting plate 8133 and the second mounting plate 8132 is adjusted by the multiple first limiting bolts 8133b. One end of the first limiting bolt 8133b abuts against the second mounting plate 8132. After rotation and adjustment, the relative position of the third mounting plate 8133 and the second mounting plate 8132 can be changed. Finally, the third mounting plate 8133 and the second mounting plate 8132 are connected by multiple fasteners.

[0100] Meanwhile, the third bending plate 8133a engages with the outer wall of the second bending plate 8132a via the second limiting bolts 8133c. One end of each of the second limiting bolts 8133c abuts against the outer wall of the second bending plate 8132a. By rotating and adjusting the second limiting bolts 8133c, the distance between the third bending plate 8133a and the second bending plate 8132a can be adjusted. Through the combination and adjustment of related structures such as the elongated hole 8132b, the first limiting bolts 8133b, and the second limiting bolts 8133c, the position of the support frame 815 can be precisely fine-tuned in three vertical directions. In some embodiments, fasteners can also be connected between the first mounting plate 8131 and the second mounting plate 8132 to further fix the position between them. A universal bearing 8133d connects the third mounting plate 8133 and the second mounting plate 8132. The universal bearing 8133d can ensure the relative connection between the third mounting plate 8133 and the second mounting plate 8132, and facilitate the adjustment of the positional relationship between the third mounting plate 8133 and the second mounting plate 8132 by means of the first limiting bolt 8133b and the second limiting bolt 8133c.

[0101] This embodiment provides a carrier support 6 for a semiconductor substrate cleaning and drying assembly. The carrier support 6 includes: a tray 61 disposed within a support frame 815 for supporting a carrier 9, and a support plate 62 movably disposed on the tray 61. The support plate 62 is provided with a plurality of support portions 621 for supporting semiconductor substrates 91 within the carrier 9. The support portions 621 have contact structures, and the contact structures extend along the arrangement direction of the semiconductor substrates 91 within the carrier 9 so that the contact structures make point contact or line contact with the semiconductor substrates 91 within the carrier 9. The tray 61 and the support plate 62 are configured to, in response to contacting the bottom of the drying container 2 during the descent of the carrier support 6, trigger relative movement between the tray 61 and the support plate 62 to lift the semiconductor substrates 91 within the carrier 9.

[0102] Specifically, the support plate 62 is provided with a plurality of support portions 621 for supporting semiconductor substrates 91 in the carrier 9 and a plurality of pillars 622 for supporting the support plate 62. The support portions 621 have contact structures, and the contact structures extend along the arrangement direction of the semiconductor substrates 91 in the carrier 9 so that the contact structures make point contact or line contact with the semiconductor substrates 91 in the carrier 9. The pillars 622 pass through the tray 61 and can abut against the bottom of the drying container 2 so that the support plate 62 and the tray 61 move relative to each other to lift the semiconductor substrates 91 in the carrier 9. In the cleaning process, the carrier bracket 6 can be placed inside the support frame 815 of the lifting mechanism 8, and the carrier 9 containing the semiconductor substrate 91 can be placed on the tray 61. The lifting mechanism 8 slowly raises and lowers the carrier 9 containing the semiconductor substrate 91 into the drying container 2 of the semiconductor substrate cleaning and drying assembly. During the descent of the carrier 9, the contact structure of the support part 621 on the support plate 62 does not contact the semiconductor substrate 91 until the support column 622 abuts against the bottom of the drying container 2 and continues to descend. The tray 61 continues to descend with the lifting mechanism 8 and separates from the support plate 62. The contact structure of the support part 621 on the support plate 62 contacts the semiconductor substrate 91 and lifts the semiconductor substrate 91 in the carrier 9. Since the contact structure makes point contact or line contact with the semiconductor substrate 91 in the carrier 9, the contact area is relatively small, maximizing the cleaning exposure area on the surface of the semiconductor substrate 91. This effectively solves the problem of incomplete local cleaning caused by the large contact area in the prior art, and improves the cleaning quality of the semiconductor substrate 91 and the yield of subsequent processes. Meanwhile, the carrier bracket 6 is replaceable by taking it out and placing it on the support frame 815 without adjusting its positioning. It can be compatible with semiconductor substrates 91 of different sizes. The support plate 62 is movably set on the tray 61. The two are integrated into one piece, making installation and adjustment more convenient. When in use, the semiconductor substrate 91 only needs to be lifted to a certain height in the carrier 9. The semiconductor substrate 91 does not need to be separated from the carrier 9 during the entire drying process. That is, the tightness between the semiconductor substrate 91 and the carrier 9 is reduced to the point that the first solution film can enter between the semiconductor substrate 91 and the carrier 9 for dehydration. This makes it more compatible and significantly reduces the breakage rate and bending degree.

[0103] In this embodiment, the insertion of the support column 622 is only one way to realize the relative movement between the trigger plate 61 and the support plate 62. It can also be realized by other structures, such as setting levers, inclined planes, hydraulics and other mechanisms to realize the relative movement between the plate 61 and the support plate 62.

[0104] In the optional technical solution of this embodiment, a plurality of support elements 611 for supporting the carrier 9 are connected to the pallet 61, and the support elements 611 cause the carrier 9 to be tilted.

[0105] Specifically, the height of the support element 611 extending above the support plate 61 is adjustable; the height of all support elements 611 extending above the support plate 61 decreases sequentially, so that the carrier 9 is tilted. After the carrier 9 is placed on the support element 611, it can tilt to prevent water accumulation. Specifically, the support element 611 can be a pointed set screw, installed in the screw hole of the support plate 61, with the pointed end facing upward to support the carrier 9. The height is adjustable, and each carrier 9 is equipped with four screws, each with a different installation height. After the carrier 9 is placed on it, it is tilted in all directions. The tilt angle of the carrier 9 can be changed by adjusting the pointed set screws. The tilt angle in all directions is adjustable from 0 to 10 degrees. This tilting prevents water from accumulating on the surface of the carrier 9. The locking nut is connected to the pointed set screw from the lower side of the support plate 61 to prevent the pointed set screw from rotating.

[0106] This embodiment is not limited to this. The support element 611 can also make the carrier 9 tilt in other ways, such as using a wedge block or an angled mounting surface.

[0107] In the optional technical solution of this embodiment, after the relative movement between the pallet 61 and the support plate 62, the support plate 62 can make the semiconductor substrate 91 in the carrier 9 tilt.

[0108] Specifically, the height of the support column 622 extending from the lower side of the support plate 62 is adjustable, and the height of all the support columns 622 extending from the lower side of the support plate 62 decreases sequentially, so that the semiconductor substrate 91 inside the carrier 9 forms the same tilt posture as the tilt posture of the carrier 9, ensuring the cleaning effect and the positional stability between the carrier 9 and the semiconductor substrate 91. The support column 622 has a threaded structure and its height is adjustable. Each support plate 62 has four support columns 622, and the height of the four support columns 622 is adjusted according to the tilt angle of the carrier 9, so that the support plate 62 remains parallel to the carrier 9 when supporting the semiconductor substrate 91.

[0109] This embodiment is not limited to this. After the relative movement between the pallet 61 and the support plate 62, the semiconductor substrate 91 inside the carrier 9 may be tilted in a different way than the tilting posture of the carrier 9.

[0110] In the optional technical solution of this embodiment, the contact structure is located at the top of the support 621. The support 621 includes a flow guiding structure. The flow guiding structure is configured to guide liquid to flow in a direction away from the contact area between the semiconductor substrate 91 in the carrier 9 and the support 621 when the support 621 supports the semiconductor substrate 91 in the carrier 9.

[0111] Specifically, one side of the support 621 is a vertical surface, and the other side is an inclined surface 6211. The inclined surface 6211 forms a flow guiding structure, and the intersection of the top of the vertical surface and the top of the inclined surface 6211 forms a contact structure. The inclined surface 6211 serves as a flow guide, allowing water droplets at the contact point between the semiconductor substrate 91 and the support 621 to be guided away during the slow drainage process.

[0112] It should be noted that both sides of the support portion 621 can also be inclined surfaces 6211, meaning that both sides of the support portion 621 have flow guiding structures. These flow guiding structures are not limited to inclined surfaces 6211; they can also be curved surfaces or grooves. Furthermore, the contact structure along the arrangement direction of the semiconductor substrate 91 within the carrier 9 can be a toothed structure, a linear structure, or a dotted structure, and it is not limited to being located at the top of the support portion 621; it can be located at other positions, as long as the requirements are met.

[0113] In the optional technical solution of this embodiment, a plurality of positioning components 612 that cooperate with the carrier 9 are connected to the upper side of the pallet 61. These positioning components 612 are distributed around the carrier 9, which can effectively restrict the movement of the carrier 9 and ensure that the position of the carrier 9 is stable during the lifting process, without deviation or shaking.

[0114] In an optional technical solution of this embodiment, the tray 61 is provided with a first perforation 613. This reduces weight and facilitates drainage.

[0115] In an optional technical solution of this embodiment, a second perforated hole 623 is provided on the support plate 62. This reduces weight and facilitates drainage.

[0116] In the optional technical solution of this embodiment, a guide sleeve is provided between the support column 622 and the support plate 61. The guide sleeve is a guide sleeve for the support column 622, which serves a lubricating function and prevents jamming when the support plate 61 and the support plate 62 move relative to each other.

[0117] This embodiment provides a semiconductor substrate drying process implemented using a semiconductor substrate cleaning and drying assembly. The semiconductor substrate drying process includes the following steps: placing a carrier 9 on a tray 61 and immersing it in a cleaning solution; lifting a semiconductor substrate 91 by the relative movement of a support plate 62 and a tray 61, so that the contact structure between the semiconductor substrate 91 and the support portion 621 forms point contact or line contact; applying a first solution to the surface of the cleaning solution to form a first solution film; controlling the liquid level of the cleaning solution to decrease at a uniform speed; and replenishing the first solution during the decrease.

[0118] In an optional technical solution of this embodiment, the pallet 61 has a positioning groove 614 that penetrates itself and cooperates with the positioning block 8151b. The pallet 61 is supported by the positioning groove 614 passing through the positioning block 8151b, ensuring the stability of the pallet 61 within the support frame 815. When the lifting mechanism 8 descends, the pallet 61 moves together with the support frame 815 until the carrier 9 is accurately positioned in the washing and drying position.

[0119] It should be noted that in this embodiment, a support plate 62 can be installed on the tray 61 to realize the tray support function, or the support plate 62 can be omitted when the tray support function is not needed.

[0120] In the optional technical solution of this embodiment, the semiconductor substrate cleaning and drying assembly further includes: a level gauge 7; the level gauge 7 is disposed inside the inner container 21 and includes a pressure transmission component 71 connected to a gas supply pipe 36 and a differential pressure detection component 72 electrically connected to a controller. The outlet end of the pressure transmission component 71 is located at the bottom of the inner container 21, and the differential pressure detection component 72 is disposed on the pressure transmission component 71. The controller uses the differential pressure detection component 72 to detect the pressure difference between the liquid level above the cleaning liquid in the inner container 21 and the outlet end of the pressure transmission component 71 to obtain the liquid level of the cleaning liquid in the inner container 21. Using the level gauge 7 to control the inlet and outlet of the water supply provides high accuracy and is not affected by flow rate factors. The differential pressure detection component 72 outputs a differential pressure value that is proportional to the liquid level height and offsets the influence of gas pressure fluctuations. The gas pressure transmission component 71 continuously supplies low-pressure gas (typical pressure 0.25 bar), causing microbubbles to form at the outlet of the gas pressure transmission component 71. This prevents liquid backflow or crystallization from clogging the gas pressure transmission component 71. Furthermore, the gas is inert, preventing liquid oxidation or contamination, making it particularly suitable for ultrapure chemicals.

[0121] In this embodiment, the level gauge is not limited to level gauge 7, but can also be other level gauges, such as submersible hydrostatic level gauges, ultrasonic level gauges, radar level gauges, photoelectric level gauges, and float level gauges. However, compared with other level measurement technologies, level gauge 7 performs better in the following aspects: 1. Corrosion resistance and anti-clogging capability: Semiconductor cleaning fluids are highly corrosive. The gas pressure transmission component 71 of level gauge 7 is made of corrosion-resistant and highly clean material, and gas purging avoids direct contact between the liquid and the sensor core, resulting in a significantly longer lifespan than submersible hydrostatic level gauges. Grinding fluids contain particles and are prone to deposition. Continuous gas purging keeps the pipeline unobstructed, while the probes of ultrasonic or radar level gauges are easily interfered with by deposits. 2. High purity assurance: Due to non-contact measurement, only gas contacts the liquid, avoiding the introduction of metal ion contamination by photoelectric / float sensors, meeting semiconductor-grade purity requirements (ppt level). Furthermore, there is no risk of penetration, eliminating the possibility of media penetration leading to failure compared to capacitive sensors (which require electrode contact). III. Adaptability to complex operating conditions: Suitable for sealed pressure vessels, directly compatible with nitrogen-sealed storage tanks (a common design in semiconductor processes), the differential pressure principle naturally offsets the effects of gas pressure fluctuations. Suitable for high-temperature / high-pressure environments, with a wide temperature tolerance range (-40~125℃) and pressure up to 40 bar, superior to plastic floats or photoelectric sensors. IV. Accuracy and reliability: Full-temperature compensation is possible; the diffused silicon sensor has built-in temperature compensation, achieving an accuracy of ±0.5%FS, avoiding signal scattering of ultrasonic waves due to steam / foam. Furthermore, there are no moving mechanical parts; magnetostrictive or float-type sensors have a risk of jamming. With no moving parts, maintenance is low. V. Real-time monitoring, multi-point control, and real-time feedback from the level gauge.

[0122] In an optional technical solution of this embodiment, a two-stage pressure regulating valve 711 is provided on the pressure transmission component 71 to regulate the inlet pressure of the pressure transmission component 71. An inlet flow regulating valve 712 is provided on the pressure transmission component 71 to precisely regulate the outlet rate by controlling the speed at which gas enters the pressure transmission component 71.

[0123] When the inner container 21 is filled with water, the air pressure transmission component 71 inside the inner container 21 forms bubbles in the water. The airflow regulation of the air inlet flow regulating valve 712 directly affects the bubble generation frequency. Specifically, the faster the flow rate, the more sensitive the level gauge 7 becomes (increased liquid level fluctuation), and the slower the flow rate, the slower the response (the liquid level tends to stabilize). The outlet end of the air pressure transmission component 71 is provided with a beveled cut to prevent it from contacting and blocking the bottom plane of the inner container 21. The inner container 21 is provided with a fixed structure, and the air pressure transmission component 71 is fixed to the fixed structure. The fixed structure can be a fixed block, a fixed plate, or other structure that meets the requirements. The air pressure transmission component 71 can be a metal pipe, an air pipe, or other structure that meets the requirements. The level gauge 7 monitors the liquid level height inside the inner container 21 in real time, and the feedback liquid level data is connected to the PLC system. By triggering the process sequence switching node through a predetermined liquid level threshold, the entire process of water filling and drainage is automated and closed-loop controlled. Slow drainage control: Set liquid level value - Set slow drainage flow rate - Slow drainage begins - Reach set liquid level - Slow drainage starts - Controller starts second pump 51 according to the set flow rate - Drainage flow meter 53 monitors the flow rate in real time and provides feedback to the controller. The controller automatically calculates and adjusts the power of second pump 51 based on the flow rate feedback from drainage flow meter 53 to achieve the set flow rate, forming a closed-loop control. When the next liquid level node is reached, the controller automatically adjusts the power of second pump 51 according to the flow rate feedback from drainage flow meter 53 to achieve the flow rate of this node until the slow drainage end liquid level node is reached. Then, slow drainage ends and the next step begins. The entire slow drainage process can have multiple speed-varying nodes.

[0124] In an optional technical solution of this embodiment, the air pressure transmission component 71 passes through the flow equalization component 214, and the air outlet of the air pressure transmission component 71 is located between the flow equalization component 214 and the bottom of the inner container 21. This ensures detection accuracy.

[0125] It should be noted that in some embodiments of this application, the drying container 2 can also be a prior art drying container 2, such as a drying container 2 including a first container connected to the main body 1 and a second container connected to the top outer wall of the first container. The second container and the outer wall of the first container form an overflow collection structure 221, so that the cleaning liquid overflowing from the first container flows into the overflow collection structure 221. A second drain pipe is connected to the bottom of the overflow collection structure 221; an inlet pipe 212 is connected to the side wall of the first container, a first drain pipe is connected to the bottom wall of the first container, a first solution bubbling tank is connected to the side wall of the second container, and the opening of the first solution bubbling tank is higher than the top opening of the first container. The cap is connected to the top opening of the second container. The first drain pipe includes a first section connected to the first container, a second section connected to the end of the first section away from the first container, and a third section connected to the end of the second section away from the first section and used to drain the cleaning liquid in the first container to the outside of the main body 1. The second pump 51, the first valve 52, and the flow meter are connected to the second section. The first drain pipe is connected to a sixth pipe. One end of the sixth pipe is connected to the junction of the first section and the second section, and the other end is connected to the junction of the second section and the third section. The sixth pipe is connected to a ninth valve. The highest point of the second section is higher than the top opening of the first container. The inner diameter of the third section gradually increases from the end near the second section to the tail end of the third section.

[0126] This embodiment provides an exhaust manifold device 11 for use in a semiconductor substrate processing equipment. The exhaust manifold device 11 is hollow inside and connected to the main body 1. A plant exhaust system connector 111 is provided on the first side of the exhaust manifold device 11. An adjusting elongated hole, an exhaust adjusting plate 112, and an exhaust port 113 are provided on the second side of the exhaust manifold device 11. The exhaust adjusting plate 112 is located at the exhaust port 113 and is connected to the adjusting elongated hole by screws. The adjusting plate 112 adjusts its connection position through the adjusting elongated hole to change the opening of the exhaust port 113. The plant exhaust system connector 111 of the exhaust manifold device 11 is connected to the interface of the plant exhaust system, which is convenient for one-to-one connection. At the same time, the exhaust port 113 can promptly remove air from the main body 1 of the semiconductor substrate processing equipment to avoid contamination and also to cool it down.

[0127] In the optional technical solution of this embodiment, a row of exhaust ports 113 is arranged vertically; both ends of the row of exhaust ports 113 are provided with adjustment elongated holes, and both ends of the exhaust adjustment plate 112 are respectively connected to the adjustment elongated holes. The exhaust ports 113 can be moved back and forth to open or close, improving the exhaust effect, and the vertical arrangement occupies a small area. A first exhaust valve 114 with manually adjustable opening is provided on the third side of the exhaust manifold device 11. The first exhaust valve 114 is connected to the lifting mechanism 8 through a first flexible hose to exhaust air into the lifting mechanism 8 area. A second exhaust valve 115 and a third exhaust valve 116 with manually adjustable opening are provided on the fourth side of the exhaust manifold device 11. The second exhaust valve 115 is connected to the exhaust boxes on both sides of the drying container 2 through a second flexible hose, and the third exhaust valve 116 is connected to the exhaust boxes through a third flexible hose to exhaust air into the exhaust boxes. The fourth side of the exhaust manifold 11 is equipped with a manually adjustable fourth exhaust valve 117. The fourth exhaust valve 117 is connected to a three-way valve on the drain pipe of the drying container 2 via a fourth flexible hose, venting air from the drying container 2. The first side of the exhaust manifold 11 also has a multi-functional area with multiple exhaust connectors 118. At least one exhaust connector 118 is connected to an exhaust negative pressure gauge via an air pipe, and the exhaust negative pressure gauge is used to monitor the exhaust pressure within the exhaust manifold 11. At least one exhaust connector 118 is connected to a cylinder mounting box 32 via an air pipe, venting air from the cylinder mounting box 32. At least one exhaust connector 118 is connected to a guide rail mounting box 33 via an air pipe, venting air from the guide rail mounting box 33. At least one exhaust connector 118 is connected to a pressure supply system 4 via an air pipe, venting air from the pressure supply system 4. The entire exhaust manifold 11 has a simple structure and can meet the overall exhaust requirements of the semiconductor substrate processing equipment.

[0128] It should be noted that the first exhaust valve 114, the second exhaust valve 115, the third exhaust valve 116 and the fourth exhaust valve 117 are all equipped with an adjusting plate that can rotate 90°. The valve opening can be adjusted by manually rotating the plate, thereby controlling the exhaust volume in that area. The structure is simple and the operation is convenient.

[0129] This embodiment provides a semiconductor substrate processing apparatus, including the aforementioned semiconductor substrate cleaning and drying assembly. Therefore, the technical advantages and effects achieved by this semiconductor substrate processing apparatus include those achieved by the aforementioned semiconductor substrate cleaning and drying assembly, which will not be elaborated here.

[0130] The semiconductor substrate 91 cleaning and drying process provided in this embodiment is implemented using the aforementioned semiconductor substrate processing equipment. Therefore, the technical advantages and effects achieved by the semiconductor substrate 91 cleaning and drying process include the technical advantages and effects achieved by the aforementioned semiconductor substrate processing equipment, which will not be repeated here.

[0131] The semiconductor substrate 91 cleaning and drying process includes the following steps:

[0132] Standby state before cleaning of semiconductor substrate 91: The inlet pipe 212 slowly injects cleaning fluid into the inner container 21. The cleaning fluid in the inner container 21 is in a state of full water slow overflow. The overflowing cleaning fluid enters the overflow collection structure 221 and is discharged through the outer tank drain pipe 222. The lifting height of the lifting mechanism 8 is in the standby position. The automatic opening and closing mechanism 3 is in the closed state. The gas outlet 312 on the automatic opening and closing mechanism 3 blows gas into the drying container 2. The liquid level in the pressure supply system 4 is higher than the predetermined L liquid level. The first gas pipe 42 fills the pressure supply system 4 with gas.

[0133] Semiconductor substrate 91 cleaning: When the cleaning fluid level in the inner container 21 reaches the overflow state and the temperature at the outlet of the gas heating device 372 reaches the predetermined temperature, the gas outlet 312 on the automatic opening and closing mechanism 3 stops blowing gas into the drying container 2, the automatic opening and closing mechanism 3 opens, the carrier 9 is placed on the lifting mechanism 8, the lifting mechanism 8 descends to the cleaning position, the semiconductor substrate 91 in the carrier 9 is immersed in the cleaning fluid in the inner container 21, and the automatic opening and closing mechanism 3 closes; the inlet pipe 212 quickly injects cleaning fluid into the inner container 21, the cleaning fluid in the inner container 21 is in a full overflow state, and the inlet pipe 212 stops injecting cleaning fluid into the inner container 21.

[0134] Slow drainage: The first valve 52 and the second pump 51 are opened, and the slow drainage path 5 begins to slowly drain liquid. During the liquid level drop, when the level gauge 7 detects that the liquid level has reached the first predetermined position, the first valve 52 and the second pump 51 are closed, and a first predetermined amount of the first solution is injected into the liquid distribution device 24. The first solution is applied to the guide structure 211 through the distribution port, and then guided to the liquid surface in the inner container 21 through the guide structure 211 to form a first solution film. After stopping the injection of the first solution into the liquid distribution device 24, the first valve 52 and the second pump 51 are opened, and the slow drainage path 5 continues to slowly drain liquid. Each time the level gauge 7 detects that the liquid level has reached the replenishment position of the first solution, a second predetermined amount of the first solution is injected into the liquid distribution device 24. When the level gauge 7 detects that the liquid level has reached the second predetermined position, the first valve 52 and the second pump 51 are closed.

[0135] Quick drainage: The inner tank drain pipe 213 quickly drains the cleaning fluid. When the level gauge 7 detects that the liquid level has reached the third predetermined position, the lifting mechanism 8 rises to the second intermediate position. After all the cleaning fluid in the inner container 21 is drained, the inner tank drain pipe 213 stops draining after a set time.

[0136] Semiconductor substrate 91 drying: Gas supply pipe 36 and second gas pipe 37 supply gas to gas outlet 312 on automatic opening and closing mechanism 3, and at the same time turn on gas heating device 372 to heat the gas, so that the hot gas ejected from gas outlet 312 dries semiconductor substrate 91 and carrier 9. After drying for a set time, lifting mechanism 8 rises to the first intermediate position, gas heating device 372 is turned off, and gas supply pipe 36 and second gas pipe 37 continue to supply gas to gas outlet 312 on automatic opening and closing mechanism 3 at a small flow rate.

[0137] Process completion: Gas supply pipe 36 and second gas pipe 37 stop supplying gas to gas outlet 312 on automatic opening and closing mechanism 3, automatic opening and closing mechanism 3 opens, lifting mechanism 8 rises to standby position, liquid inlet pipe 212 slowly injects cleaning fluid into inner container 21, carrier 9 on lifting mechanism 8 is removed, automatic opening and closing mechanism 3 closes, when the liquid level of cleaning fluid in inner container 21 reaches the fourth predetermined position, liquid inlet pipe 212 quickly injects cleaning fluid into inner container 21, when the liquid level of cleaning fluid in inner container 21 reaches the fifth predetermined position, liquid inlet pipe 212 slowly injects cleaning fluid into inner container 21, so that the cleaning fluid in inner container 21 is in a full water slow overflow state;

[0138] The lifting height points of the lifting mechanism 8, from high to low, are: standby position, first intermediate position, second intermediate position, and cleaning position.

[0139] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A slow-drainage system for semiconductor substrates, used in semiconductor substrate processing equipment, characterized in that, The semiconductor substrate slow drainage system includes: a drying container (2), a cleaning liquid inlet and outlet pipeline system connected to the drying container (2), and a level gauge (7). The drying container (2) includes an inner container (21) and an outer container (22). The outer container (22) is connected to the top outer wall of the inner container (21) and forms an overflow collection structure (221) with the outer wall of the inner container (21) so that the cleaning liquid overflowing from the inner container (21) flows into the overflow collection structure (221). The cleaning fluid inlet and outlet pipeline system includes an inlet pipe (212), a slow discharge flow path (5), an inner tank drain pipe (213), and an outer tank drain pipe (222). The inlet pipe (212) is connected to the inner container (21) and is used to inject cleaning fluid into the inner container (21). The slow discharge flow path (5) is connected to the inner container (21) and the outer container (22) and is used to discharge the cleaning fluid in the inner container (21) to the overflow collection structure (221). The inner tank drain pipe (213) is connected to the inner container (21) and is used to discharge the cleaning fluid in the inner container (21). The outer tank drain pipe (222) is connected to the outer container (22) and is used to discharge the cleaning fluid in the overflow collection structure (221). The level gauge (7) is installed inside the inner container (21) and includes a pressure transmission component (71) connected to a gas supply pipe (36) and a differential pressure detection component (72) electrically connected to the controller. The outlet of the pressure transmission component (71) is located at the bottom of the inner container (21), and the differential pressure detection component (72) is installed on the pressure transmission component (71). The controller uses the differential pressure detection component (72) to detect the pressure difference between the liquid level above the cleaning fluid in the inner container (21) and the outlet of the pressure transmission component (71) to obtain the liquid level of the cleaning fluid in the inner container (21). The slow discharge flow path (5) is connected to a second pump (51), a first valve (52) and a discharge flow meter (53). The second pump (51) and the discharge flow meter (53) are both electrically connected to the controller so that the controller controls the flow rate of the second pump (51) based on the signal feedback of the discharge flow meter (53) on the liquid flow rate in the slow discharge flow path (5). The cleaning fluid in the inner container (21) is discharged upward through the slow discharge path (5) into the overflow collection structure (221), effectively offsetting the direct influence of gravity on the drainage rate.

2. The slow-drainage system for semiconductor substrates according to claim 1, characterized in that, It also includes a gas supply pipe (36) for supplying gas, on which a gas filter (361) and a primary pressure regulating valve (362) are provided.

3. The slow-drainage system for semiconductor substrates according to claim 1, characterized in that, The pneumatic transmission component (71) is equipped with a two-stage pressure regulating valve (711).

4. The slow-drainage system for semiconductor substrates according to claim 1, characterized in that, The air pressure transmission component (71) is equipped with an air intake flow regulating valve (712).

5. The slow-drainage system for semiconductor substrates according to claim 1, characterized in that, The air outlet of the air pressure transmission component (71) is provided with a slanted cut.

6. The slow-drainage system for semiconductor substrates according to claim 1, characterized in that, The inner container (21) is provided with a flow equalization component (214), which is located at the bottom of the inner container (21); The air pressure transmission component (71) passes through the flow equalization component (214), and the air outlet of the air pressure transmission component (71) is located between the flow equalization component (214) and the bottom of the inner container (21).

7. The slow-drainage system for semiconductor substrates according to claim 1, characterized in that, A flow guiding structure (211) is provided on the outer side of the top opening of at least one side wall of the inner container (21), and an overflow gap is provided between the flow guiding structure (211) and the side wall of the outer container (22) so that the cleaning liquid overflowing from the inner container (21) flows into the overflow collection structure (221) through the overflow gap. A liquid distribution device (24) is provided above the flow guiding structure (211), and a distribution port is provided on the liquid distribution device (24). The first solution is applied to the flow guiding structure (211) through the distribution port, and then guided to the liquid surface in the inner container (21) through the flow guiding structure (211) to form a first solution film.

8. A semiconductor substrate processing apparatus, characterized in that, The semiconductor substrate slow-drainage system includes any one of claims 1-7.

9. A method for controlling slow drainage, characterized in that, Implemented using the semiconductor substrate processing apparatus of claim 8, the slow-drainage control method includes the following steps: The first valve (52) and the second pump (51) are opened, and the slow discharge flow path (5) begins to slowly discharge liquid; During the process of liquid level drop, when the liquid level gauge (7) detects that the liquid level has reached the first preset position, the first valve (52) and the second pump (51) are closed, and the first preset amount of first solution is injected into the liquid distribution device (24). The first solution is applied to the flow guiding structure (211) through the application port, and then guided to the liquid surface in the inner container (21) through the flow guiding structure (211) to form a first solution film. After the injection of the first solution into the liquid distribution device (24) is stopped, the first valve (52) and the second pump (51) are opened, and the slow discharge flow path (5) continues to slowly discharge the liquid; Each time the level gauge (7) detects that the liquid level has reached the position for replenishing the first solution, it injects a second preset amount of the first solution into the liquid distribution device (24); When the level gauge (7) detects that the liquid level has reached the second preset position, the first valve (52) and the second pump (51) are closed.

Images