Electrostatic chuck

Abstract

The application relates to the technical field of semiconductor detection, in particular to an electrostatic chuck, which comprises a base, a plurality of mounting parts arranged on the side surface of the base at intervals, and the mounting parts are flexible; an electrode layer, which is located on the top surface of the base and comprises a positive electrode layer and a negative electrode layer which are insulated from each other; and an insulating layer, which is located on the surface of the electrode layer away from the top surface of the base. The electrostatic chuck has better flatness, and the wafer carried by the electrostatic chuck has higher flatness.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of semiconductor detection, and particularly relates to an electrostatic chuck. BACKGROUND

[0002] In a overlay measurement process, since the measurement speed needs to be matched with the process speed of a lithography machine, and the measurement precision is sub-nanometer level to correct the lithography machine process, in the measurement process, the wafer needs to be placed below an optical detection system, and the chuck is used to drive the wafer to move at a high acceleration or deceleration, and after the wafer is moved to a position, the wafer needs to quickly reach a nanometer level position stability. It is found through analysis that for a process below 28nm node, higher measurement speed and measurement precision are needed, therefore, the platform for driving the wafer to move needs higher acceleration and higher position stability, and at present, the acceleration of the platform for driving the wafer to move is required to be not less than 2g (g is the gravity acceleration), and the in-position stability of the wafer in a static state is required to be less than 1nm.

[0003] For the chuck of the electrostatic adsorption type, not only the relative movement between the wafer and the electrostatic chuck needs to be prevented in the measurement process, but also the electrostatic chuck needs to have higher flatness and nanometer level positioning precision, so as to ensure the accuracy of the overlay measurement, however, the manufacturing process of the electrostatic chuck is complex, and the electrostatic chuck is usually formed by stacking multiple layers, which is easy to cause the adsorption surface of the electrostatic chuck for bearing the wafer to be non-parallel to the bottom surface of the electrostatic chuck for installation, and usually, the bottom surface of the electrostatic chuck is installed on the installation platform in a horizontal state, which will cause the adsorption surface of the electrostatic chuck to be in a non-horizontal state, and affect the measurement. SUMMARY

[0004] Therefore, the application aims to provide an electrostatic chuck, which is beneficial to ensure that the adsorption surface of the electrostatic chuck has better flatness, and further ensure that the wafer borne by the electrostatic chuck has higher flatness.

[0005] To achieve the above object, the technical scheme of the application is as follows:

[0006] The application provides an electrostatic chuck, which comprises a base, a plurality of installation parts arranged at intervals on the side surface of the base, and the installation part is flexible; an electrode layer, which is located on the top surface of the base and comprises a positive electrode layer and a negative electrode layer which are insulated from each other; and an insulating layer, which is located on the surface of the electrode layer away from the top surface of the base.

[0007] Further, the installation part is integrally formed with the base.

[0008] Further, the material of the base and the material of the installation part are both silicon nitride.

[0009] Further, the side of the mounting portion is divided into a first side, a second side, a third side and a fourth side, the first side is connected with the substrate, the second side is opposite to the first side, the third side is opposite to the fourth side, the third side and / or the fourth side has a flexible opening, the flexible opening penetrates the mounting portion along the thickness direction of the mounting portion.

[0010] Further, the third side and the fourth side both have flexible openings, and the flexible openings of the third side and the fourth side are staggered in the direction from the third side to the fourth side.

[0011] Further, the third side and the fourth side both have a corresponding flexible opening, and the ratio of the size of each flexible opening to the width of the mounting portion is within the range of 1 / 2 to 3 / 5 in the direction from the third side to the fourth side.

[0012] Further, the third side has one flexible opening, and the fourth side has a plurality of flexible openings, and the ratio of the size of the flexible opening of the third side to the width of the mounting portion is within the range of 1 / 2 to 3 / 5 in the direction from the third side to the fourth side, and the ratio of the sum of the sizes of the flexible openings of the fourth side to the width of the mounting portion is within the range of 1 / 2 to 3 / 5.

[0013] Further, the electrostatic chuck further comprises a mounting bracket corresponding to the mounting portion and a fastener, the first end of the mounting bracket has a through hole, the second side of the mounting portion has a fastening hole, the fastener penetrates the through hole and is fastened to the fastening hole to realize the connection between the mounting portion and the mounting bracket; wherein the outer diameter of the fastener matches the inner diameter of the fastening hole, and the inner diameter of the through hole is greater than the outer diameter of the fastener, and the position of the mounting portion relative to the mounting bracket in the thickness direction of the substrate is adjustable.

[0014] Further, the side of the substrate has a needle opening penetrating the substrate, and a plurality of needle openings are arranged at intervals on the side of the substrate; the electrostatic chuck further comprises a needle liftable in the needle opening.

[0015] Further, the needle comprises a bearing portion, a supporting portion and a protruding portion, the protruding portion is arranged on the bearing portion, the bearing portion is arranged on the supporting portion, the bearing portion extends in the direction parallel to the top surface of the substrate, and the supporting portion extends in the thickness direction of the substrate.

[0016] Compared with the prior art, the application can achieve the following beneficial effects:

[0017] The mounting portion for realizing electrostatic chuck mounting is arranged at the edge of the base, and the mounting portion is designed to have a flexible structure, so that after the electrostatic chuck is mounted in place by the mounting portion, even if the parallelism between the upper and lower surfaces of the electrostatic chuck is poor, the adjustment of the flatness of the upper surface of the electrostatic chuck is not limited, and the corresponding mounting portion is fine-tuned relative to the mounting position, so that the parallelism adjustment of the upper surface of the electrostatic chuck can be realized, and during the fine-tuning of the mounting portion, since the mounting portion has flexibility, the mounting portion can absorb the stress generated by the fine-tuning on the electrostatic chuck, thereby ensuring that the upper surface of the electrostatic chuck for carrying the wafer always has high flatness, thereby facilitating the improvement of the precision of the overlay measurement of the wafer;

[0018] In addition, the mounting portion is integrally formed with the base, so that the mounting portion and the base have good stress transmission, thereby facilitating the effective absorption of the stress of the base by the mounting portion; silicon nitride is used as the material of the base and the mounting portion, on the one hand, which is conducive to reducing the weight of the electrostatic chuck, improving the rigidity of the electrostatic chuck, and facilitating the processing of the electrostatic chuck, on the other hand, the silicon nitride material has better flexibility than other types of ceramic materials, which is conducive to ensuring that the mounting portion has better flexibility; in addition, the mounting portion is designed at the edge of the base, avoiding the opening of the base and the setting of metal mounting parts in the opening for mounting the electrostatic chuck, thereby reducing the magnetic interference caused by the mounting structure, avoiding the change of the magnetic field strength in the measurement area of the wafer, and more conducive to meeting the requirement of electron beam measurement on the magnetic field, thereby providing an electrostatic chuck with light weight, high rigidity, high flatness, high position stability of the wafer under high-speed motion, fine adjustment of the flatness, and less magnetic field interference. BRIEF DESCRIPTION OF DRAWINGS

[0019] The accompanying drawings, which form a part of the present application, are used to provide a further understanding of the present application and are incorporated herein for explanatory purposes. The description of the embodiments of the present application and their illustrations serve to explain the present application without imposing any undue limitation thereto. In the drawings:

[0020] Figure 1 A structural schematic diagram of the electrostatic chuck according to the embodiment of the present application;

[0021] Figure 2 A structural schematic diagram of the mounting portion according to the embodiment of the present application;

[0022] Figure 3 A mounting schematic diagram of the electrostatic chuck according to the embodiment of the present application;

[0023] Figure 4 A mounting schematic diagram of the electrostatic chuck in the prior art;

[0024] Figure 5A top view of two mounting parts with different flexible openings according to an embodiment of the present application.

[0025] Reference signs: 1, electrostatic chuck; 2, mounting platform; A, mounting plane; 100, base; 101, mounting part; 110, positive electrode layer; 120, negative electrode layer; 160, reverse electrode reserved hole; 151, first side; 152, second side; 153, third side; 154, fourth side; 150, flexible opening; 102, mounting support; 170, fastener; 140, through hole; 141, fastening hole; 1021, first support part; 1022, second support part; 103, thimble; 104, bearing part; 105, support part; 106, protruding part; 130, isolation structure; 132, first isolation part; 131, second isolation part; 112, first positive electrode part; 111, second positive electrode part; 122, first negative electrode part; 121, second negative electrode part. DETAILED DESCRIPTION

[0026] It is found through analysis that, in the related art, the mounting method of the electrostatic chuck 1 is usually front mounting, that is, the electrostatic chuck 1 has a corresponding mounting hole, and the electrostatic chuck 1 is mounted on the mounting platform 2 by setting a mounting piece in the mounting hole. Figure 4 The front mounting has the following problems: the thickness of the electrostatic chuck 1 is relatively thin, and the installation torque can cause the surface of the electrostatic chuck 1 to deform, affecting the requirement of high flatness for measurement; the mounting hole of the front mounting can destroy the consistency of electrostatic adsorption, causing the adsorption force applied by the electrostatic chuck 1 to the wafer to be uneven; the mounting piece of the front mounting is usually a metal screw, which can easily cause electrode effect under normal circumstances, which is not conducive to electron beam measurement; and the mounting piece of the metal material can also cause magnetization and local magnetic field fluctuation, affecting electron beam measurement.

[0027] In addition, the electrostatic chuck 1 is usually a multi-layer superimposed structure, and the parallelism error of each layer is easily accumulated, which can cause the top surface and the bottom surface of the electrostatic chuck 1 to be in a non-parallel state. Therefore, after the bottom surface of the electrostatic chuck 1 is positioned on the mounting plane A, even if the mounting plane A is in a horizontal state, the adsorption surface of the electrostatic chuck 1 for bearing the wafer and the mounting plane A will have a parallelism error, and the error is 2um~5um, which will directly cause the flatness of the system to decrease. Sub-nanometer overlay measurement requires high flatness, but the up-down adjustment of the electrostatic chuck 1 is constrained by the mounting plane A, so that the electrostatic chuck 1 is difficult to realize up-down adjustment. If a gasket is added between the electrostatic chuck 1 and the mounting plane A, some areas of the lower surface of the electrostatic chuck 1 will be supported, and some areas will be in a suspended state, causing the mounting position of the electrostatic chuck 1 to be unevenly stressed, which can easily cause local deformation of the electrostatic chuck 1, and then affect the flatness of the adsorption surface and the mounting stability of the electrostatic chuck.

[0028] In order to solve the above problems, the electrostatic chuck is provided, and the mounting structure of the electrostatic chuck is realized by the flexible mounting part on the side of the base. Even if the parallelism between the upper and lower surfaces of the electrostatic chuck is poor, the flatness of the upper surface of the electrostatic chuck is not affected. By fine-tuning the corresponding mounting part relative to the mounting position, the parallelism of the upper surface of the electrostatic chuck can be adjusted. During the fine-tuning of the mounting part, the mounting part is flexible, so the stress caused by the fine-tuning of the electrostatic chuck is absorbed by the mounting part, thereby ensuring that the upper surface of the electrostatic chuck for carrying the wafer always has high flatness.

[0029] In order to make the purpose, technical scheme and advantages of the present application clearer, the present application will be further described in detail below with reference to the drawings and specific embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application, and do not constitute a limitation on the present application.

[0030] It should be noted that the embodiments in the present application and the features in the embodiments can be combined with each other without conflict.

[0031] In the description of the present application, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first", "second" and the like are only for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features limited by "first", "second" and the like can explicitly or implicitly include one or more features. In the description of the present application, unless otherwise specified, the meaning of "a plurality of" is two or more.

[0032] In the description of the present application, it should be noted that unless otherwise specified and limited, the terms "mounting", "connection", "connection" should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium, or it can be the communication between two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0033] The present application will be described in detail below with reference to the accompanying drawings and in conjunction with embodiments.

[0034] With reference to Figures 1 to 3 The present application provides an electrostatic chuck, comprising: a substrate 100, and a plurality of mounting portions 101 arranged at intervals on the side surface of the substrate 100, and the mounting portion 101 is flexible; an electrode layer, the electrode layer is located on the top surface of the substrate 100, and the electrode layer comprises a positive electrode layer 110 and a negative electrode layer 120 which are insulated from each other; and an insulating layer, the insulating layer is located on the surface of the electrode layer away from the top surface of the substrate 100. Wherein, the surface of the insulating layer away from the electrode layer is used to carry a wafer. It should be noted that, in order to facilitate understanding, Figure 1 The insulating layer is illustrated in a transparent state, and the actual insulating layer can be in a non-transparent state.

[0035] The mounting portion 101 is designed on the side surface of the substrate 100, which not only avoids the limitation of the mounting platform on the parallelism adjustment of the electrostatic chuck, solves the problem of poor flatness of the adsorption surface caused by the low parallelism of the front and back surfaces of the electrostatic chuck, and the flexible mounting portion 101 is also used to absorb the structural deformation caused by machining and assembly adjustment, thereby relieving the stress deformation of the electrostatic chuck, and further ensuring that the electrostatic chuck has high flatness.

[0036] In some embodiments, the mounting portion 101 is integrally formed with the substrate 100, which is conducive to ensuring good stress transmission between the mounting portion and the substrate, and further conducive to effectively absorbing the stress of the substrate by the mounting portion.

[0037] In some embodiments, the side surface of the substrate 100 has three mounting portions 101, and the three mounting portions 101 are distributed at equal intervals on the side surface of the substrate 100, which is conducive to ensuring that the substrate 100 is stressed evenly, and further ensuring that the electrostatic chuck has high flatness.

[0038] In some embodiments, the material of the substrate 100 and the material of the mounting portion 101 are both silicon nitride. Using silicon nitride as the material of the substrate and the mounting portion, on the one hand, it is conducive to reducing the weight of the electrostatic chuck, improving the rigidity of the electrostatic chuck, and facilitating the processing of the electrostatic chuck, and on the other hand, the silicon nitride material has better flexibility than other types of ceramic materials, which is conducive to ensuring that the mounting portion has better flexibility.

[0039] In some embodiments, the electrostatic chuck also has a reverse electrode reserved hole 160, the reverse electrode reserved hole 160 penetrates the electrostatic chuck along the thickness direction of the electrostatic chuck, and the reverse electrode reserved hole 160 is used to accommodate a measurement electrode, and the measurement electrode is used to apply voltage to the wafer during measurement.

[0040] In some examples, the top surface and the bottom surface of the substrate 100 are both circular.

[0041] In some embodiments, the side of the mounting portion 101 is divided into a first side 151, a second side 152, a third side 153 and a fourth side 154, the first side 151 is connected with the base 100, the second side 152 is opposite to the first side 151, the third side 153 is opposite to the fourth side 154, the third side 153 and / or the fourth side 154 has a flexible opening 150, the flexible opening 150 penetrates the mounting portion 101 along the thickness direction of the mounting portion 101.

[0042] In some embodiments, the third side 153 and the fourth side 154 both have the flexible opening 150, and the flexible opening 150 of the third side 153 and the flexible opening 150 of the fourth side 154 are staggered in the direction of the third side 153 pointing to the fourth side 154.

[0043] In some embodiments, the size of each flexible opening 150 is the same in the direction of the first side 151 pointing to the second side 152.

[0044] In some embodiments, referring to (a) in Figure 5 In some embodiments, referring to (a) in

[0045] In some embodiments, referring to (a) in Figure 5In the (b) of the first aspect, the third side 153 has one flexible opening 150, and the fourth side 154 has a plurality of flexible openings 150, for example, the fourth side 154 has 2 flexible openings 150, in the direction along the third side 153 pointing to the fourth side 154, the ratio of the size of the flexible opening 150 of the third side 153 to the width of the mounting portion 101 is within the range of 1 / 2~3 / 5, and the sum of the sizes of the flexible openings 150 of the fourth side 154 to the width of the mounting portion 101 is within the range of 1 / 2~3 / 5; or, the fourth side 154 has one flexible opening 150, and the third side 153 has a plurality of flexible openings 150, for example, the third side 153 has 2 flexible openings 150, in the direction along the fourth side 154 pointing to the third side 153, the ratio of the size of the flexible opening 150 of the fourth side 154 to the width of the mounting portion 101 is within the range of 1 / 2~3 / 5, and the sum of the sizes of the flexible openings 150 of the third side 153 to the width of the mounting portion 101 is within the range of 1 / 2~3 / 5. In this way, the flexibility distribution of the mounting portion 101 can be ensured to be uniform, thereby facilitating the absorption of the corresponding stress of the mounting portion 101 to be more uniform.

[0046] It should be noted that, for the case that the fourth side 154 or the third side 153 has a plurality of flexible openings 150, in the direction along the first side 151 pointing to the second side 152, the flexible openings 150 located on the fourth side 154 and the flexible openings 150 located on the third side 153 are arranged alternately, in this way, the flexibility distribution of the mounting portion 101 can be ensured to be uniform, thereby facilitating the absorption of the corresponding stress of the mounting portion 101 to be more uniform.

[0047] In some embodiments, the electrostatic chuck further comprises a mounting bracket 102 corresponding to the mounting portion 101, the first end of the mounting bracket 102 having a through hole 140, the second side 152 of the mounting portion 101 having a fastening hole 141, and a fastener 170 penetrating the through hole 140 and fastened to the fastening hole 141 to realize the connection of the mounting portion 101 and the mounting bracket 102; wherein the outer diameter of the fastener 170 matches the inner diameter of the fastener 170, and the inner diameter of the through hole 140 is greater than the outer diameter of the fastener 170, and the position of the mounting portion 101 relative to the mounting bracket 102 in the thickness direction of the substrate 100 is adjustable. In this way, the mounting bracket 102 cooperates with the mounting portion 101 to support the electrostatic chuck, so that the up-down adjustment of the electrostatic chuck is not restricted by the mounting platform. Since the up-down adjustment amount of the electrostatic chuck is usually in microns, the adjustment range requirement can be met by reserving a gap for the through hole 140, that is, the inner diameter of the through hole 140 is greater than the outer diameter of the fastener 170, so that the fastener 170 is adjustable in the through hole 140 in the thickness direction of the substrate 100. By adjusting the relative position of the mounting bracket 102 and the mounting portion 101 in the vertical direction of each mounting fixed point, the planarity of the upper surface of the electrostatic chuck is fine-tuned to achieve high planarity of the wafer.

[0048] In some examples, the fastening hole 141 can be a threaded hole, and the fastener 170 can be a nut.

[0049] In some embodiments, the difference between the inner diameter of the through hole 140 and the outer diameter of the fastener 170 is in the range of 0.08mm-0.12mm.

[0050] In some embodiments, the mounting bracket 102 comprises a first support portion 1021 and a second support portion 1022 connected thereto, the first support portion 1021 extends in the thickness direction of the substrate 100, the second support portion 1022 extends in the horizontal direction, the through hole 140 is located at the first end of the first support portion 1021, and the second end of the first support portion 1021 is connected to the second support portion 1022.

[0051] In some embodiments, the side surface of the substrate 100 has a plurality of pin openings penetrating the substrate 100, and the plurality of pin openings are arranged at intervals on the side surface of the substrate 100; the electrostatic chuck further comprises a pin 103 that can be lifted in the pin opening. By providing the pin opening on the edge of the substrate 100, the center opening of the electrostatic chuck for setting the pin 103 is avoided, thereby alleviating the impact of the center opening on the adsorption uniformity.

[0052] In some embodiments, the pin opening is in the shape of a U.

[0053] In some examples, the side surface of the substrate 100 has three pin openings penetrating the substrate 100, and the three pin openings are uniformly arranged on the side surface of the substrate 100.

[0054] In some embodiments, the top pin 103 comprises a bearing part 104, a supporting part 105, and a protruding part 106, the protruding part 106 is arranged on the bearing part 104, the bearing part 104 is arranged on the supporting part 105, the bearing part 104 extends along a direction parallel to the top surface of the substrate 100, and the supporting part 105 extends along a thickness direction of the substrate 100.

[0055] In some embodiments, the edge of the top pin 103 away from the center of the substrate 100 is aligned with the edge of the substrate 100, and the protruding part 106 is higher than the bearing part 104 along the thickness direction of the substrate 100.

[0056] It can be understood that for the way of using an electrostatic chuck to carry a wafer for measurement, a non-vacuum adsorbed mechanical hand with a large size is usually used to pick and place the wafer, and the mechanical hand with a large size is used to avoid the wafer from falling in the case of no vacuum adsorption. Therefore, if only the top pin extending along the vertical direction is used, the multiple top pins will affect the large-size mechanical hand to pick and place the wafer. However, the top pin 103 in the present application is used, the supporting part 105 not only sets the protruding part 106 below the wafer through the bearing part 104, but also leaves a moving space for the large-size mechanical hand by the L-shaped structure formed by the supporting part 105 and the bearing part 104, thereby avoiding the interference to the mechanical hand to pick and place the wafer. In addition, the protruding part 106 with a smaller size than the bearing part 104 is used to support the wafer, thereby avoiding the large-area bearing part 104 from directly contacting the wafer, ensuring that the top pin 103 provided by the present application still has a small contact area with the wafer, and further avoiding the increase of the pollution to the wafer.

[0057] In some embodiments, the electrode layer further comprises an isolation structure 130, the positive electrode layer 110, the negative electrode layer 120, and the isolation structure 130 are arranged on the top surface of the substrate 100; the isolation structure 130 comprises a first isolation part 132 and a second isolation part 131, the first isolation part 132 encloses a sealed area on the top surface of the substrate 100, the positive electrode layer 110, the negative electrode layer 120, and the second isolation part 131 are located in the sealed area, and the second isolation part 131 is located between the positive electrode layer 110 and the negative electrode layer 120. It can be understood that the isolation structure 130 and the insulating layer on the top surface of the substrate 100 are both insulating materials, and the positive electrode layer 110 and the negative electrode layer 120 are both conductive materials, and different voltages are applied to the positive electrode layer 110 and the negative electrode layer 120 respectively to form electrostatic adsorption to the wafer.

[0058] In some embodiments, the positive electrode layer 110 includes a first positive electrode part 112 located at a central region of the top surface of the substrate 100 and a plurality of second positive electrode parts 111 in the form of sectors arranged at intervals around the outer periphery of the first positive electrode part 112, each second positive electrode part 111 being connected to the first positive electrode part 112 at one end thereof facing the first positive electrode part 112; and the negative electrode layer 120 includes a plurality of first negative electrode parts 122 and a plurality of second negative electrode parts 121, the number of the first negative electrode parts 122, the number of the second negative electrode parts 121 and the number of the second positive electrode parts 111 being the same, each second negative electrode part 121 being in the form of a sector and located between two adjacent second positive electrode parts 111, each first negative electrode part 122 being located on a side of a second positive electrode part 111 away from the first positive electrode part 112, and two adjacent second negative electrode parts 121 being connected by a corresponding first negative electrode part 122. The second positive electrode parts 111 in the form of sectors and the second negative electrode parts 121 in the form of sectors are arranged alternately, which is conducive to improving the electrostatic adsorption capacity, ensuring that the wafers after adsorption are subjected to uniform stress, and ensuring that the wafers after adsorption have a relatively optimal flatness.

[0059] In some examples, the positive electrode layer 110 includes the first positive electrode part 112 and six second positive electrode parts 111, and the negative electrode layer 120 includes six first negative electrode parts 122 and six second negative electrode parts 121.

[0060] It should be understood that the various forms of flow shown above can be used to reorder, add or delete steps. For example, the steps described in the present disclosure can be executed in parallel, in sequence, or in a different order, as long as the desired results of the technical solutions of the present disclosure can be achieved, and the present disclosure is not limited herein.

[0061] The above detailed description does not constitute a limitation on the scope of protection of the present application. Those skilled in the art should understand that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modifications, equivalent replacements and improvements made within the spirit and principles of the present application shall be included in the scope of protection of the present application.

Claims

1. An electrostatic chuck, comprising: The application relates to a static chuck, which comprises a base (100) and a plurality of mounting parts (101) arranged on the side of the base (100) and having flexibility, the side of the mounting part (101) is divided into a first side (151), a second side (152), a third side (153) and a fourth side (154), the first side (151) is connected with the base (100), the second side (152) is opposite to the first side (151), the third side (153) is opposite to the fourth side (154), the third side (153) and / or the fourth side (154) has a flexible notch (150), the flexible notch (150) penetrates the mounting part (101) along the thickness direction of the mounting part (101), and the mounting part (101) is used for absorbing the stress generated on the static chuck during fine adjustment to adjust the flatness of the upper surface of the static chuck. An electrode layer is arranged on the top surface of the base (100), and the electrode layer comprises a positive electrode layer (110) and a negative electrode layer (120) which are insulated from each other. An insulating layer is arranged on the surface of the electrode layer away from the top surface of the base (100). The mounting part (101) is integrally formed with the base (100).

2. The electrostatic chuck of claim 1, wherein, The material of the base (100) and the material of the mounting part (101) are both silicon nitride.

3. The electrostatic chuck of claim 1 or 2, wherein, The third side (153) and the fourth side (154) both have flexible notches (150), and the flexible notch (150) of the third side (153) is staggered with the flexible notch (150) of the fourth side (154) in the direction in which the third side (153) points to the fourth side (154).

4. The electrostatic chuck of claim 1, wherein, The third side (153) and the fourth side (154) both have a corresponding flexible notch (150), and the size ratio of each flexible notch (150) to the width of the mounting part (101) is within the range of 1 / 2-3 / 5 in the direction in which the third side (153) points to the fourth side (154).

5. The electrostatic chuck of claim 4, wherein, The third side (153) has one flexible notch (150), and the fourth side (154) has a plurality of flexible notches (150), the size ratio of the flexible notch (150) of the third side (153) to the width of the mounting part (101) is within the range of 1 / 2-3 / 5 in the direction in which the third side (153) points to the fourth side (154), and the total size ratio of the flexible notches (150) of the fourth side (154) to the width of the mounting part (101) is within the range of 1 / 2-3 / 5.

6. The electrostatic chuck of claim 4, wherein, ​ 7. The electrostatic chuck of claim 1, wherein, The electrostatic chuck further comprises a mounting bracket (102) corresponding to the mounting portion (101) and a fastener (170), a first end of the mounting bracket (102) has a through hole (140), a second side (152) of the mounting portion (101) has a fastening hole (141), the fastener (170) penetrates the through hole (140) and is fastened to the fastening hole (141) to realize the connection of the mounting portion (101) and the mounting bracket (102); Wherein, the outer diameter of the fastener (170) matches the inner diameter of the fastening hole (141), and the inner diameter of the through hole (140) is greater than the outer diameter of the fastener (170), the position of the mounting portion (101) relative to the mounting bracket (102) in the thickness direction of the substrate (100) is adjustable.

8. The electrostatic chuck of claim 1, wherein, The side of the substrate (100) has a thimble aperture penetrating the substrate (100), and a plurality of thimble apertures are arranged at intervals on the side of the substrate (100). The electrostatic chuck further comprises a thimble (103) which can be lifted in the thimble aperture.

9. The electrostatic chuck of claim 8, wherein, The thimble (103) comprises a bearing portion (104), a support portion (105) and a protruding portion (106), the protruding portion (106) is arranged on the bearing portion (104), the bearing portion (104) is arranged on the support portion (105), the bearing portion (104) extends in the direction parallel to the top surface of the substrate (100), and the support portion (105) extends in the thickness direction of the substrate (100).

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