Semiconductor module with ultrasonic welding frame

Abstract

The invention relates to the field of semiconductor modules, and discloses a semiconductor module with an ultrasonic welding framework, which comprises a copper plate, a plurality of connecting frames are linearly arranged at the top of the copper plate, two supporting legs are symmetrically arranged at the bottom of each connecting frame, and the supporting legs are Z-shaped. A copper supporting layer is arranged at the joint of the bottom of the connecting frame and the surface of the copper plate, the copper supporting layer is sputtering plated copper, the thickness of the copper supporting layer is smaller than 5 microns, and the copper supporting layer can reduce a gap between the connecting frame and the copper plate. The copper supporting layer is added, a gap generated between the bottom of the copper supporting piece and the surface of the copper plate during ultrasonic welding is eliminated, an intermetallic compound layer is effectively formed, the bonding strength and the heat transfer effect are quite remarkable, the bonding strength of the intermetallic compound is improved, and the problem of porosity of bonding of traditional soldering paste is solved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor modules, in particular to a semiconductor module with an ultrasonic welding frame. BACKGROUND

[0002] In the patent application with publication number CN105244325A, a metallized substrate (for example made of ceramic) is included, on which a semiconductor chip is fixed, and an electrical terminal, with which the semiconductor module or its chip can be electrically connected to another element. This terminal, which is usually produced from copper, can be connected to the metal layer of the substrate, for example by means of ultrasonic welding. The advantage is that the housing is ultrasonically welded and has a section which, when the disk rotates, controls the air flow so that particles produced in the ultrasonic welding can be prevented from reaching the disk.

[0003] In the prior art including the above-mentioned patent, when the semiconductor module chip is manufactured, the copper support of the ordinary connecting piece and the top of the copper plate are ultrasonically welded, and auxiliary materials such as solder paste are filled during welding to facilitate welding, but after the contact surface of the copper support is joined in a plane, a gap is generated in the middle, which is easy to cause problems in joint strength and heat transfer. SUMMARY

[0004] The problem to be solved by the present application is that a gap is generated in the middle when the copper support and the top of the copper plate are ultrasonically welded.

[0005] To solve the above technical problems, the technical scheme of the present application is as follows: a semiconductor module with an ultrasonic welding frame, comprising a copper plate, the top of the copper plate is arranged in a straight line with a plurality of connecting frames, the bottom of the connecting frame is symmetrically provided with two feet, the feet are in the shape of a Z, a copper support layer is arranged at the connecting position between the bottom of the connecting frame and the surface of the copper plate, the copper support layer is sputter plated with copper, the thickness of the copper support layer is less than 5um, the copper support layer can reduce the gap between the connecting frame and the copper plate, and the connecting frame and the copper plate are ultrasonically welded.

[0006] Preferably, the bottom of the copper plate is provided with a ceramic plate, and the bottom of the ceramic plate is provided with a bottom plate.

[0007] Preferably, the top of the bottom plate is provided with a shell, and the top of the shell is provided with a through slot.

[0008] Preferably, the top of the inner wall of the connecting frame is provided with a connecting piece.

[0009] Preferably, one side of the connecting piece is matched with the through slot.

[0010] Preferably, one side of the top of the bottom plate is provided with a plug-in end.

[0011] Preferably, one side of the plug-in end is electrically connected with the copper plate.

[0012] Compared with the prior art, the technical scheme of the present application has the following advantages: In the process of ultrasonic welding between the copper support of the ordinary connector and the top of the copper plate during the manufacture of the semiconductor module chip, a gap is generated between the contact surface of the copper support and the copper plate after the planar joint, thereby causing problems in joint strength and heat transfer. However, in the process of ultrasonic welding between the copper support and the copper plate surface of the present application, the copper support layer is added to eliminate the gap generated during the ultrasonic welding between the bottom of the copper support and the surface of the copper plate. This not only effectively forms an intermetallic compound layer, but also significantly improves the joint strength and heat transfer effect, enhances the intermetallic compound bonding strength, and solves the problems of porosity, cleaning cost, and insufficient thermal mechanical reliability of traditional solder paste joint. BRIEF DESCRIPTION OF DRAWINGS

[0013] Figure 1 It is a schematic diagram of the overall structure of the present application; Figure 2 It is a schematic diagram of the internal structure of the shell of the present application; Figure 3 It is a front view schematic diagram of the bottom plate structure of the present application; Figure 4 It is a left view schematic diagram of the connector structure of the present application; Figure 5 It is a schematic diagram of the combination of the connector structure of the present application; Figure 6 It is a bottom view schematic diagram of the connector structure of the present application; Figure 7 It is a schematic diagram of the connector structure of the present application; Figure 8 It is a schematic diagram of the copper support layer structure of the present application.

[0014] In the figure: 1, connector frame; 2, plug-in end; 3, shell; 4, copper plate; 5, ceramic plate; 6, connector; 7, bottom plate. DETAILED DESCRIPTION

[0015] To make the purpose, technical scheme and advantages of the embodiments of the present disclosure clearer, the technical scheme of the embodiments of the present disclosure will be described clearly and completely below in conjunction with the drawings of the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, rather than all the embodiments. Based on the described embodiments of the present disclosure, all other embodiments obtained by those of ordinary skill in the art without creative labor fall within the scope of protection of the present disclosure.

[0016] Unless otherwise defined, technical terms or scientific terms used in the present disclosure shall have the meanings as commonly understood by one of ordinary skill in the art to which this disclosure belongs. The terms "comprising", "comprises" and "comprised of" as used herein are synonymous with "including", "includes" or "containing", "contains", and allow for the presence of additional elements or steps. The terms "a" and "an" and "the" as used herein mean "one or more" when used in the context of expressing an element's quantity, unless otherwise specifically noted. The term "about" when used before a quantitative value means that the value of the quantitative value can vary by 1%, 5%, 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, 95%, or 99%, or any range derivable therein, unless otherwise specifically noted.

[0017] As shown in the Figures 1 to 8 The present application provides a semiconductor module with ultrasonic welding frame, comprising a plurality of connecting frames 1 arranged in a linear shape on the top of a copper plate 4, two symmetrical supporting legs provided at the bottom of the connecting frame 1, the supporting legs being in a Z shape, a copper supporting layer provided at the connecting position between the bottom of the connecting frame 1 and the surface of the copper plate 4, the copper supporting layer being sputtered copper, the thickness of the copper supporting layer being less than 5um, the copper supporting layer being capable of reducing the gap between the connecting frame 1 and the copper plate 4, and the connecting frame 1 and the copper plate 4 being ultrasonic welded.

[0018] The bottom of the copper plate 4 is provided with a ceramic plate 5, and the bottom of the ceramic plate 5 is provided with a bottom plate 7.

[0019] The top of the bottom plate 7 is provided with an outer shell 3, and the top of the outer shell 3 is provided with a through slot.

[0020] The top of the inner wall of the connecting frame 1 is provided with a connecting piece 6.

[0021] One side of the connecting piece 6 is matched with the through slot.

[0022] One side of the top of the bottom plate 7 is provided with a plug-in end 2.

[0023] One side of the plug-in end 2 is electrically connected with the copper plate 4.

[0024] The working principle and use process of the present application are as follows: a copper supporting layer with a thickness less than 5um is deposited on the surface of the copper plate 4 at a specific position by physical vapor deposition sputtering, so that the sputtered copper supporting layer forms a uniform metal supporting layer on the surface of the copper plate 4, fills the micro-unevenness of the subsequent bonding interface, provides a pure copper contact surface for the terminal, avoids oxidation pollution, and directly places the connecting frame 1 on the sputtered copper layer after the copper supporting layer is sputtered, and then performs welding treatment on the two by applying an ultrasonic welding device, so that the copper atoms are diffused during welding, an intermetallic compound layer is formed at the interface, external welding adhesive is not needed, the pores and bubbles of the traditional solder paste process are eliminated, full-surface metallurgical bonding is achieved, the connecting piece 6 and the like are installed in the connecting frame 1 after welding, and finally the outer shell 3 is installed.

[0025] The above embodiments are only exemplary embodiments of the present application, and are not intended to limit the present application. The scope of protection of the present application is defined by the claims. Those skilled in the art can make various modifications or equivalent replacements to the present application within the spirit and protection scope of the present application, and such modifications or equivalent replacements should also be considered to fall within the protection scope of the present application.

Claims

1. A semiconductor module with an ultrasonic welding frame, comprising a copper plate (4), characterized in that: The top of the copper plate (4) is provided with a plurality of connecting frames (1) arranged in a straight line, and the bottom of the connecting frame (1) is symmetrically provided with two supporting legs, and the supporting legs are in a Z shape. A copper supporting layer is provided at the connection between the bottom of the connecting frame (1) and the surface of the copper plate (4), and the copper supporting layer is sputtered copper. The thickness of the copper supporting layer is less than 5 μm. The copper supporting layer can reduce the gap between the connecting frame (1) and the copper plate (4), and the connecting frame (1) and the copper plate (4) are ultrasonically welded.

2. The semiconductor module with an ultrasonic welding frame according to claim 1, characterized in that: A ceramic plate (5) is provided at the bottom of the copper plate (4), and a bottom plate (7) is provided at the bottom of the ceramic plate (5).

3. The semiconductor module with an ultrasonic welding frame according to claim 2, characterized in that: A shell (3) is provided on the top of the bottom plate (7), and a through slot is provided on the top of the shell (3).

4. The semiconductor module with an ultrasonic welding frame according to claim 1, wherein: A connecting piece (6) is provided on the top of the inner wall of the connecting frame (1).

5. The semiconductor module with an ultrasonic welding frame according to claim 4, characterized in that: One side of the connecting piece (6) is adapted to the through slot.

6. The semiconductor module with an ultrasonic welding frame according to claim 1, characterized in that: A plug-in end (2) is provided on one side of the top of the bottom plate (7).

7. The semiconductor module with an ultrasonic welding frame according to claim 6, characterized in that: One side of the plug-in end (2) is electrically connected to the copper plate (4).

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