Packaging structure and preparation method thereof, and preparation method of electronic device
The combined structure of the thermal sublimation material layer and the encapsulation film layer solves the problem of damage to the functional interface layer caused by traditional encapsulation methods, achieves effective water and oxygen barrier and easy-to-remove encapsulation effect, and ensures stable device performance.
Patent Information
- Application Number
- CN202510992446.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-07-18
- Publication Date
- 2025-10-17
AI Technical Summary
Traditional packaging methods can easily damage the functional interface layer during the removal process, affecting device performance, and it is difficult to achieve effective water and oxygen barriers.
The functional interface layer is encapsulated by adopting a combined structure of a thermal sublimation material layer and an encapsulation film layer. Double protection is achieved by sublimation and removal of the thermal sublimation material layer to avoid damage to the interface layer.
It achieves mechanical and water-oxygen barrier to the functional interface layer, reduces erosion, and at the same time, the packaging material is easy to remove, avoiding contamination of the interface layer by secondary treatment, ensuring the smooth preparation of subsequent film layers.
Smart Images
Figure CN120813178A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the packaging technical field, in particular to a packaging structure and a preparation method thereof, and a preparation method of an electronic device. BACKGROUND
[0002] In the preparation process of electronic devices such as perovskite solar cells, organic optoelectronic devices, quantum dot light emitting devices, etc., various functional interface layers are often used, such as nickel oxide (NiO) hole transport layer, tin dioxide (SnO2) electron transport layer, self-assembled monolayer (SAM), etc. These interface materials usually have the characteristics of high surface activity, easy moisture absorption, easy oxidation, sensitivity to solvents, and easy pollution. Under the background of the increasing popularity of device division of labor and modular manufacturing, the prefabrication and delivery of functional interface layers have gradually become an industrial demand. For example, an upstream manufacturer may need to deliver FTO or ITO sheets coated with a functional layer to a downstream for perovskite spin coating, but the interface layer is easily moisture-absorbed or degraded in the air, loses surface activity, and seriously affects the subsequent film forming quality and device performance, therefore, the functional interface layer needs to be packaged and then transferred for delivery. However, the traditional packaging means has the problem of easy damage to the functional interface layer in the subsequent removal process. SUMMARY
[0003] Therefore, it is necessary to provide a packaging structure and a preparation method thereof, and a preparation method of an electronic device. The packaging structure of the present application can achieve good packaging effect, reduce the erosion of the functional interface layer by water and oxygen, and at the same time, the packaging material in the packaging structure of the present application is easy to remove, which can reduce the damage to the functional interface layer in the removal process.
[0004] In a first aspect, the present application provides a packaging structure, comprising a substrate, a first functional interface layer, a thermal sublimation material layer, and a packaging film layer.
[0005] The first functional interface layer, the thermal sublimation material layer, and the packaging film layer are sequentially stacked on the surface of the substrate, and the first functional interface layer is arranged between the thermal sublimation material layer and the substrate; the thermal sublimation material layer and the substrate together realize the packaging of the first functional interface layer.
[0006] In some embodiments, the thermal sublimation temperature of the thermal sublimation material layer is 80-150°C.
[0007] In some embodiments, the material of the thermal sublimation material layer comprises at least one of dimethyl terephthalate and its derivatives, dimethyl phthalate and its derivatives, methyl p-hydroxybenzoate and its derivatives, and naphthalene and its derivatives.
[0008] In some embodiments, the thickness of the thermal sublimation material layer is 50-200 nm.
[0009] In some embodiments, the material of the encapsulation film layer comprises at least one of polyethylene, polyethylene terephthalate, and polyvinylidene chloride.
[0010] In some embodiments, the material of the first functional interface layer comprises at least one of a hole transport material, an electron transport material, and a self-assembled molecular material.
[0011] In a second aspect, the present application provides a method for preparing an encapsulation structure, comprising the following steps:
[0012] providing a substrate;
[0013] preparing a first functional interface layer on a surface of the substrate;
[0014] preparing a thermal sublimation material layer on the surface of the substrate, the thermal sublimation material layer covering the first functional interface layer as a whole;
[0015] providing an encapsulation film layer on a surface of the thermal sublimation material layer away from the substrate.
[0016] In some embodiments, preparing a thermal sublimation material layer on the surface of the substrate comprises the following steps:
[0017] coating a solution of the material of the thermal sublimation material layer on the surface of the substrate;
[0018] drying the solution.
[0019] In a third aspect, the present application provides a method for preparing an electronic device, comprising the following steps:
[0020] providing the encapsulation structure according to any one of the above, or the encapsulation structure prepared by the method for preparing an encapsulation structure according to any one of the above;
[0021] performing a heating treatment on the encapsulation structure to sublimate the thermal sublimation material layer and remove the encapsulation film layer;
[0022] sequentially preparing an active layer, a second functional interface layer, and an electrode on a surface of the first functional interface layer.
[0023] In some embodiments, the heating treatment is performed in an atmosphere with a gas pressure less than or equal to 10 Pa.
[0024] In some embodiments, the heating treatment is performed at a temperature of 100℃ to 130℃.
[0025] In some embodiments, the heating treatment is performed for a time of 5 min to 10 min.
[0026] The packaging structure encapsulates the first functional interface layer on the surface of the substrate by the thermal sublimation material layer, and realizes double protection by the packaging film layer arranged on the thermal sublimation material layer, can mechanically and water-oxygen barrier double-protect the first functional interface layer, to realize better packaging effect, reduce the water oxygen erosion of the functional interface layer. At the same time, the thermal sublimation material layer can be removed by thermal sublimation, and the surface of the first functional interface layer will not be damaged in the removal process. With the thermal sublimation of the thermal sublimation material layer, the packaging film layer can also be removed directly. The removal of the thermal sublimation material layer and the packaging film layer in the packaging structure is convenient, without the aid of cleaning and other secondary processing, which can reduce the pollution to the first functional interface layer, and facilitate the subsequent preparation of other film layers on the surface of the first functional interface layer. The packaging structure of the present application can realize better packaging effect, reduce the water oxygen erosion of the first functional interface layer, and at the same time, the packaging material in the packaging structure of the present application is easy to remove, which can reduce the damage to the first functional interface layer in the removal process. BRIEF DESCRIPTION OF DRAWINGS
[0027] Figure 1 The structure schematic diagram of the packaging structure provided by an embodiment of the present application is shown.
[0028] Figure 2 The structure schematic diagram of the electronic device provided by an embodiment of the present application is shown.
[0029] Explanation of reference signs:
[0030] 10-substrate; 20-transparent conductive layer; 30-first functional interface layer; 40-thermal sublimation material layer; 50-packaging film layer; 60-active layer; 70-second functional interface layer; 80-electrode. DETAILED DESCRIPTION
[0031] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific embodiments of the present application are described in detail below. In the following description, a large number of specific details are set forth in order to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without departing from the spirit of the present application, therefore the present application is not limited by the specific embodiments disclosed below.
[0032] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description of the application herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.
[0033] In the description of the present application, it needs to be understood that the orientation or positional relationship indicated by the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like is based on the orientation or positional relationship shown in the drawings, and is only for the purpose of facilitating the description of the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation of the present application.
[0034] In addition, the terms "first", "second" are only for the purpose of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined with "first", "second" can explicitly or implicitly include at least one of the features. In the description of the present application, the meaning of "a plurality of" is at least two, such as two, three, etc., unless otherwise explicitly specified and limited.
[0035] In the present application, unless otherwise explicitly specified and limited, the terms "mounting", "connection", "connection", "fixing" and the like should be understood in a broad sense, for example, it can be fixedly connected, or it can be detachably connected, or it can be integrated; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the internal communication of two elements or the interaction relationship between two elements, unless otherwise explicitly limited. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.
[0036] The conventional packaging means is prone to damage the functional interface layer in the subsequent removal process. For example, PVA (polyvinyl alcohol) or PMMA (polymethyl methacrylate) is used to cover the functional interface layer to achieve packaging, but the removal of PVA requires water washing and the removal of PMMA requires solvent elution, which may cause damage to the functional interface layer or residue of cleaning agent in the removal process; physical film (such as PET film, PE protective film) is used to cover the entire sheet, but the surface material may be taken away during removal, and the interface is seriously contaminated; irreversible schemes such as UV packaging glue are used, which are difficult to clean and remove subsequently.
[0037] Therefore, with reference to Figure 1As shown, an embodiment of the present application provides a packaging structure, which comprises a substrate 10, a first functional interface layer 30, a thermal sublimation material layer 40 and a packaging film layer 50; the first functional interface layer 30, the thermal sublimation material layer 40 and the packaging film layer 50 are sequentially stacked on the surface of the substrate 10, and the first functional interface layer 30 is arranged between the thermal sublimation material layer 40 and the substrate 10; the thermal sublimation material layer 40 and the substrate 10 jointly realize packaging of the first functional interface layer 30.
[0038] The packaging structure described above realizes packaging of the first functional interface layer 30 on the surface of the substrate 10 through the thermal sublimation material layer 40, and realizes double protection through the packaging film layer 50 arranged on the thermal sublimation material layer 40, so as to realize mechanical and water-oxygen blocking double protection of the first functional interface layer 30, to realize better packaging effect and reduce water-oxygen erosion of the functional interface layer. Meanwhile, the thermal sublimation material layer 40 can be removed through thermal sublimation, and the surface of the first functional interface layer 30 will not be damaged in the removal process. With thermal sublimation of the thermal sublimation material layer 40, the packaging film layer 50 can also be directly removed. In the packaging structure described above, the thermal sublimation material layer 40 and the packaging film layer 50 are easy to remove, without the need for secondary processing such as cleaning, so as to reduce pollution to the first functional interface layer 30 and facilitate subsequent preparation of other film layers on the surface of the first functional interface layer 30. The packaging structure of the present application can realize better packaging effect and reduce water-oxygen erosion of the first functional interface layer 30, and meanwhile, the packaging material in the packaging structure of the present application is easy to remove, so as to reduce damage to the first functional interface layer 30 in the removal process.
[0039] In some embodiments, the thermal sublimation temperature of the thermal sublimation material layer 40 is 80-150°C.
[0040] It can be understood that the thermal sublimation temperature here refers to the thermal sublimation temperature of the thermal sublimation material layer 40 under normal pressure. The thermal sublimation temperature of the thermal sublimation material layer 40 is in the range described above, so as to enable the packaging structure to have better stability under general temperature conditions. Meanwhile, the thermal sublimation material layer 40 can be removed through thermal sublimation at a relatively low temperature, to prevent thermal sublimation at a high temperature from affecting the first functional interface layer 30. Alternatively, the thermal sublimation temperature of the thermal sublimation material layer 40 is 80°C, 90°C, 100°C, 110°C, 120°C, 130°C, 140°C or 150°C, or the thermal sublimation temperature of the thermal sublimation material layer 40 can also be in a range between any two temperatures described above.
[0041] In some embodiments, the material of the thermal sublimation material layer 40 comprises at least one of dimethyl terephthalate and derivatives thereof, dimethyl phthalate and derivatives thereof, methyl p-hydroxybenzoate and derivatives thereof, and naphthalene and derivatives thereof.
[0042] The material described above is stable at room temperature, insoluble in water, and does not react with the interface layer, and can achieve a good encapsulation effect on the first functional interface layer 30.
[0043] In some embodiments, the thickness of the thermal sublimation material layer 40 is 50 nm to 200 nm.
[0044] If the thickness of the thermal sublimation material layer 40 is too small, the encapsulation effect on the first functional interface layer 30 can be poor. If the thickness of the thermal sublimation material layer 40 is too large, subsequent thermal sublimation removal wastes energy. Optionally, the thickness of the thermal sublimation material layer 40 is 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, 110 nm, 120 nm, 130 nm, 140 nm, 150 nm, 160 nm, 170 nm, 180 nm, 190 nm, or 200 nm, or the thickness of the thermal sublimation material layer 40 can also be within a range between any two thicknesses described above.
[0045] In some embodiments, the material of the encapsulation film layer 50 includes at least one of polyethylene, polyethylene terephthalate, and polyvinylidene chloride.
[0046] In some embodiments, the material of the first functional interface layer 30 includes at least one of a hole transport material, an electron transport material, and a self-assembled molecular material.
[0047] In some embodiments, the hole transport material includes at least one of Spiro-OMeTAD (2,2',7,7'-tetrakis(N,N-diphenylamine)-9,9'-spirobifluorene), CBP (4,4'-bis(carbazol-9-yl) biphenyl), PEDOT:PSS (poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)), poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] (Poly-TPD), nickel oxide (NiO), molybdenum trioxide (MoO3), and vanadium pentoxide (V2O5).
[0048] In some embodiments, the electron transport material includes at least one of BPhen (4,7-diphenyl-1,10-phenanthroline), TmPyPB (1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene), aluminum quinolinol (Alq3), fullerene and its derivatives, poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT), titanium dioxide (TiO2), zinc oxide (ZnO), tin oxide (SnO2), strontium titanate (SrTiO3), cadmium sulfide (CdS), and zinc sulfide (ZnS).
[0049] In some embodiments, the self-assembled molecular material includes at least one of 2PACz, MeO-PACz, MeO-2PACz, and Me-4PACz.
[0050] In some embodiments, the encapsulation structure further includes a transparent conductive layer 20, which is located between the first functional interface layer 30 and the substrate 10.
[0051] Another embodiment of the present application provides a method for preparing an encapsulation structure, including the following steps:
[0052] providing a substrate 10;
[0053] preparing a first functional interface layer 30 on a surface of the substrate 10;
[0054] preparing a thermal sublimation material layer 40 on the surface of the substrate 10, the thermal sublimation material layer 40 entirely covering the first functional interface layer 30;
[0055] providing an encapsulation film layer 50 on a surface of the thermal sublimation material layer 40 away from the substrate 10.
[0056] In some embodiments, preparing the thermal sublimation material layer 40 on the surface of the substrate 10 includes the following steps:
[0057] applying a solution of the material of the thermal sublimation material layer 40 on the surface of the substrate 10;
[0058] drying the solution.
[0059] applying a solution of the material of the thermal sublimation material layer 40 on the surface of the substrate 10, and drying the solution, so that a dense thermal sublimation material layer 40 entirely covering the first functional interface layer 30 is formed on the surface of the substrate 10, and the first functional interface layer 30 is encapsulated.
[0060] In some embodiments, the solvent of the solution includes at least one of dichloromethane and ethyl acetate.
[0061] The above-mentioned solvent has a relatively low boiling point, which facilitates drying the solution to prepare the thermal sublimation material layer 40 at a relatively low temperature and prevents damage to the thermal sublimation material layer 40.
[0062] Another embodiment of the present application provides a method for preparing an electronic device, including the following steps:
[0063] providing an encapsulation structure according to any one of the above-mentioned encapsulation structures, or an encapsulation structure prepared by the method according to any one of the above-mentioned methods for preparing an encapsulation structure;
[0064] performing a heating treatment on the encapsulation structure, so that the thermal sublimation material layer 40 sublimates, and the encapsulation film layer 50 is removed;
[0065] The active layer 60, the second functional interface layer 70 and the electrode 80 are sequentially prepared on the surface of the first functional interface layer 30.
[0066] In some embodiments, the electronic device comprises at least one of a perovskite solar cell, an organic solar cell, an organic optoelectronic device and a quantum dot light emitting device.
[0067] In some embodiments, the electronic device comprises a substrate 10, a transparent conductive layer 20, a first functional interface layer 30, an active layer 60, a second functional interface layer 70 and an electrode 80 which are sequentially stacked.
[0068] For example, taking a perovskite solar cell as an example, the first functional interface layer 30 is a hole transport layer, and the second functional interface layer 70 is an electron transport layer. The first functional interface layer 30 is an electron transport layer, and the second functional interface layer 70 is a hole transport layer. When the first functional interface layer 30 is a hole transport layer, the preparation method of the perovskite solar cell is to sequentially prepare a perovskite layer, an electron transport layer and a metal electrode 80 on the surface of the hole transport layer after removing the thermal sublimation material layer 40 and the encapsulation film layer 50.
[0069] In some embodiments, the heating treatment is performed in an atmosphere with a gas pressure less than or equal to 10 Pa.
[0070] Performing the heating treatment in an atmosphere with a higher vacuum degree makes the thermal sublimation material layer 40 thermally sublimate, which facilitates the removal of the thermally sublimated thermal sublimation material. Optionally, the heating treatment is performed in an atmosphere with a gas pressure less than or equal to 9 Pa, or in an atmosphere with a gas pressure less than or equal to 8 Pa, or in an atmosphere with a gas pressure less than or equal to 7 Pa, or in an atmosphere with a gas pressure less than or equal to 6 Pa, or in an atmosphere with a gas pressure less than or equal to 5 Pa, or in an atmosphere with a gas pressure less than or equal to 4 Pa, or in an atmosphere with a gas pressure less than or equal to 3 Pa, or in an atmosphere with a gas pressure less than or equal to 2 Pa, or in an atmosphere with a gas pressure less than or equal to 1 Pa.
[0071] In some embodiments, the temperature of the heating treatment is 100°C to 130°C.
[0072] Optionally, the temperature of the heating treatment is 100°C, 120°C, 140°C, 160°C, 180°C, 200°C, 220°C, 240°C, 260°C, 280°C or 130°C, or the temperature of the heating treatment can also be within a range between any two of the above temperatures.
[0073] In some embodiments, the heating treatment is performed for 5 min to 10 min.
[0074] Optionally, the heating treatment is performed for 5 min, 5.5 min, 6 min, 6.5 min, 7 min, 7.5 min, 8 min, 8.5 min, 9 min, 9.5 min, or 10 min, or the heating treatment can also be performed for a time within a range between any two of the above-mentioned times.
[0075] Referring to Figure 2 Another embodiment of the present application provides an electronic device prepared by the preparation method of the electronic device of any one of the above-mentioned embodiments, comprising a substrate 10, a transparent conductive layer 20, a first functional interface layer 30, an active layer 60, a second functional interface layer 70, and an electrode 80, which are sequentially stacked.
[0076] In some embodiments, the electronic device is a perovskite solar cell.
[0077] In some embodiments, the perovskite solar cell comprises a transparent substrate 10, a transparent conductive layer 20, a hole transport layer, a perovskite layer, an electron transport layer, and a metal electrode 80, which are sequentially stacked.
[0078] In some embodiments, the perovskite solar cell comprises a transparent substrate 10, a transparent conductive layer 20, an electron transport layer, a perovskite layer, a hole transport layer, and a metal electrode 80, which are sequentially stacked.
[0079] In some embodiments, the perovskite layer comprises a perovskite material having a general chemical formula of ABX3, wherein A is selected from at least one of FA + , MA + , Cs + , and Rb + , B is selected from at least one of Pb 2+ , Sn 2+ , and Sr 2+ , and X is selected from at least one of Cl - , Br - , and I - .
[0080] Any combination of the technical features of the above-mentioned embodiments can be made, and for the sake of brevity, not all possible combinations of the technical features in the above-mentioned embodiments are described, however, as long as the combination of the technical features does not exist, it should be considered as the scope of the present application.
[0081] The above embodiments only express several implementation manners of the present application, and the description is relatively specific and detailed, but it should not be understood as a limitation on the patent scope of the application. It should be pointed out that for ordinary skilled persons in the art, several modifications and improvements can be made without departing from the concept of the present application, which are all within the protection scope of the present application. Therefore, the protection scope of the patent of the present application should be subject to the appended claims, and the description and drawings can be used to explain the content of the claims.
Claims
1. A packaging structure, characterized in that: It includes a substrate, a first functional interface layer, a thermal sublimation material layer and an encapsulation film layer; The first functional interface layer, the thermal sublimation material layer and the packaging film layer are sequentially stacked on the surface of the substrate, and the first functional interface layer is arranged between the thermal sublimation material layer and the substrate; the thermal sublimation material layer and the substrate jointly realize the packaging of the first functional interface layer.
2. The packaging structure according to claim 1, wherein: The thermal sublimation temperature of the thermal sublimation material layer is 80° C. to 150° C.
3. The packaging structure according to claim 1, wherein: The material of the thermal sublimation material layer includes at least one of dimethyl terephthalate and its derivatives, dimethyl phthalate and its derivatives, methyl parahydroxybenzoate and its derivatives, and naphthalene and its derivatives.
4. The packaging structure according to claim 1, wherein: The thickness of the thermal sublimation material layer is 50nm~200nm.
5. The packaging structure according to any one of claims 1 to 4, characterized in that: The material of the packaging film layer includes at least one of polyethylene, polyethylene terephthalate and polyvinylidene chloride.
6. The packaging structure according to any one of claims 1 to 4, characterized in that: The material of the first functional interface layer includes at least one of a hole transport material, an electron transport material and a self-assembling molecular material.
7. A method for preparing a packaging structure, characterized in that: The steps include: providing a substrate; preparing a first functional interface layer on the surface of the substrate; Preparing a thermal sublimation material layer on the surface of the substrate, wherein the thermal sublimation material layer entirely covers the first functional interface layer; A packaging film layer is disposed on the surface of the thermal sublimation material layer away from the substrate.
8. The method for preparing a packaging structure according to claim 7, wherein: Preparing a thermal sublimation material layer on the surface of the substrate comprises the following steps: coating a solution of the material of the thermal sublimation material layer on the surface of the substrate; The solution was dried.
9. A method for preparing an electronic device, characterized in that: The steps include: Provided is a package structure according to any one of claims 1 to 6, or a package structure prepared by the method for preparing the package structure according to any one of claims 7 to 8; performing a heating treatment on the packaging structure to sublime the thermal sublimation material layer and remove the packaging film layer; An active layer, a second functional interface layer and an electrode are sequentially prepared on the surface of the first functional interface layer.
10. The method for preparing an electronic device according to claim 9, wherein: The heat treatment is performed in an atmosphere with a pressure less than or equal to 10 Pa; and / or, The temperature of the heating treatment is 100°C to 130°C; and / or, The heating time is 5 min to 10 min.