Mask pattern optimization method and device, storage medium and program product

Abstract

The embodiment of the invention provides a mask pattern optimization method and device, a storage medium and a program product, and the method comprises the steps: carrying out the initial adjustment of each to-be-optimized mask pattern based on an adjustable range, taking an isolated edge in the pattern after the initial adjustment as optimization completion, and taking the remaining pattern as a to-be-checked pattern. Performing multiple rounds of mask rule inspection on the to-be-inspected graphs, performing adjustment and rollback on the to-be-inspected graphs which do not meet the rule after each round of inspection, taking the to-be-inspected graphs which meet the rule and reach the limit of the adjustable range as optimized graphs, and taking the rest graphs as to-be-readjusted graphs. And performing multiple rounds of excessive de-readjustment processing on the to-be-readjusted graph to obtain an optimized mask graph. According to the technical scheme provided by the invention, optimization can be carried out successively in the mask graph optimization process to complete graph determination, and the number of to-be-optimized graphs is decreased progressively. The consumption of computing power resources and time cost is remarkably reduced, and the optimization rate for the mask pattern is greatly improved.

Description

Technical Field

[0001] The present application belongs to the field of semiconductor manufacturing technology, and in particular relates to a mask layout optimization method, device, storage medium and program product. Background Art

[0002] Optical Proximity Correction (OPC) is one of the most critical steps in the semiconductor manufacturing process. It can effectively optimize the chip mask layout and thus improve the processing effect of the lithography process.

[0003] The mask layout can be effectively optimized through reasonable optical proximity effect correction. At present, when optimizing the mask layout obtained from the initial design, it is necessary to adjust all the graphics to be optimized on the mask layout and perform multiple rounds of mask rule checks (MRC). Each round of inspection also requires determining the fallback value and adjusting the fallback.

[0004] After this, to address the over-solution problem, all graphics to be optimized undergo multiple rounds of re-adjustment, including multiple rounds of mask rule checking and adjustment rollback. This optimization process is overly complex and time-consuming, significantly impacting the optimization rate of the mask layout. As semiconductor process nodes continue to shrink, the number of graphics on the mask layout will increase. Optimizing the layout using this method will dramatically increase the computing power and time required, further impacting the optimization rate of the mask layout.

[0005] Therefore, how to efficiently optimize the mask layout during the optical proximity effect correction process is an important issue that needs to be solved urgently. Summary of the Invention

[0006] The embodiments of the present application provide a mask layout optimization method, device, storage medium, and program product, which can efficiently optimize the graphics of the mask layout.

[0007] In a first aspect, an embodiment of the present application provides a mask layout optimization method, comprising:

[0008] Determining adjustable ranges of multiple mask patterns to be optimized on a mask layout;

[0009] Performing an initial adjustment on each mask pattern to be optimized based on the adjustable range to obtain an initially adjusted pattern corresponding to each mask pattern to be optimized, and using patterns other than isolated edges in the initially adjusted pattern as patterns to be inspected;

[0010] Performing multiple rounds of mask rule checks on at least one pattern to be inspected, performing initial adjustment and rollback processing on the pattern to be inspected that does not meet the preset mask manufacturing rules after each round of mask rule checks, and performing the next round of mask rule checks on the pattern after the rollback processing, and

[0011] The patterns to be inspected that meet the preset mask manufacturing rules and reach the limit of the adjustable range are regarded as optimized patterns. After multiple rounds of mask rule inspection, the patterns to be inspected that do not meet the preset mask manufacturing rules or do not reach the limit of the adjustable range are regarded as patterns to be readjusted.

[0012] Multiple rounds of over-de-resize processing are performed on at least one pattern to be resized to obtain an optimized mask layout.

[0013] In a second aspect, an embodiment of the present application provides a mask layout optimization device, comprising:

[0014] A range determination unit, used to determine the adjustable range of multiple mask patterns to be optimized on the mask layout;

[0015] An initial adjustment unit, configured to perform initial adjustment on each mask pattern to be optimized based on an adjustable range, obtain an initially adjusted pattern corresponding to each mask pattern to be optimized, and use the pattern other than the isolated edge in the initially adjusted pattern as a pattern to be inspected;

[0016] a mask rule checking unit, configured to perform multiple rounds of mask rule checking on at least one pattern to be checked, perform an initial adjustment and fallback process on the pattern to be checked that does not satisfy preset mask manufacturing rules after each round of mask rule checking, perform a next round of mask rule checking on the pattern after the fallback process, and consider the pattern to be checked that satisfies the preset mask manufacturing rules and reaches the limit of the adjustable range as an optimized pattern; and, after multiple rounds of mask rule checking, consider the pattern to be checked that does not satisfy the preset mask manufacturing rules or does not reach the limit of the adjustable range as a pattern to be readjusted;

[0017] The pattern re-adjustment unit is used to perform multiple rounds of transition de-re-adjustment processing on at least one pattern to be re-adjusted to obtain an optimized mask layout.

[0018] In a third aspect, an embodiment of the present application provides an electronic device comprising a processor, a memory, and a program or instruction stored in the memory and executable on the processor. When the program or instruction is executed by the processor, the steps of any mask layout optimization method of the embodiment of the present application are implemented.

[0019] In a fourth aspect, an embodiment of the present application provides a readable storage medium, on which a program or instruction is stored, and when the program or instruction is executed by a processor, the steps of any mask layout optimization method of the embodiment of the present application are implemented.

[0020] In a fifth aspect, an embodiment of the present application provides a computer program product. When the instructions in the computer program product are executed by a processor of an electronic device, the electronic device can perform the steps of any mask layout optimization method of the embodiment of the present application.

[0021] The technical solutions provided by the embodiments of this application bring at least the following beneficial effects:

[0022] A mask layout optimization method provided by an embodiment of the present application includes: performing an initial adjustment based on the adjustable range of each mask graphic to be optimized on the mask layout, and obtaining a plurality of initially adjusted graphics. The isolated edges in the initially adjusted graphics are regarded as optimized, and the remaining graphics are regarded as graphics to be checked. Then, the graphics to be checked can be subjected to multiple rounds of mask rule checks, and after each round of inspection, the graphics to be checked that do not meet the preset mask manufacturing rules are initially adjusted back, and then the next round of mask rule checks is performed. At the same time, the graphics to be checked that meet the rules and reach the limit of the adjustable range can be regarded as optimized graphics, and the remaining graphics that do not meet the rules or do not reach the limit of the adjustable range can be regarded as graphics to be readjusted. Finally, the graphics to be readjusted can be subjected to multiple rounds of over-de-readjustment processing to obtain an optimized mask layout in which all graphics are optimized.

[0023] The technical solution provided by the embodiments of this application enables the sequential optimization of completed patterns during multi-round mask layout optimization, thereby reducing the number of patterns to be optimized. This significantly reduces the consumption of computing resources and time costs, greatly improving the optimization rate for mask layouts, and thus improving the processing efficiency of the optical proximity effect correction process and the overall chip production process.

[0024] It should be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required for use in the embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0026] Figure 1 A schematic flow chart of a mask layout optimization method provided in one embodiment of the present application;

[0027] FIG2( a ) is a schematic diagram of determining an optimized pattern after an initial mask rule check according to an embodiment of the present application;

[0028] FIG2( b ) is a schematic diagram of determining an optimized pattern after an initial mask rule check according to an embodiment of the present application;

[0029] Figure 3 is a structural schematic diagram of a mask layout optimization device provided by another embodiment of the present application;

[0030] Figure 4 This is a structural diagram of a mask layout optimization device provided in another embodiment of the present application. DETAILED DESCRIPTION

[0031] The features and exemplary embodiments of various aspects of the present application will be described in detail below. In order to make the purpose, technical solutions and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only intended to explain the present application, rather than to limit the present application. For those skilled in the art, the present application can be implemented without the need for some of these specific details. The following description of the embodiments is merely to provide a better understanding of the present application by illustrating the examples of the present application.

[0032] It should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article, or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or device. In the absence of further limitations, an element defined by the phrase "comprising..." does not exclude the presence of additional identical elements in the process, method, article, or device comprising the element.

[0033] Optical proximity correction is a crucial step in semiconductor manufacturing, primarily used to optimize mask layouts and effectively improve lithographic imaging quality. Currently, when optimizing an initially designed mask layout, optical proximity correction typically requires adjustments to all patterns to be optimized on the layout. After these adjustments, all patterns must undergo a mask rule check. If the check fails, appropriate backoff values ​​must be determined and backoff adjustments performed. This process requires multiple iterations to ensure that all patterns on the mask layout meet the rule requirements.

[0034] Next, to address over-solution issues caused by excessive backoff during iteration, multiple rounds of re-adjustment are required for all the shapes to be optimized. After each round of re-adjustment, mask rule checks and backoff operations are also required. Currently, this multi-round optimization method for all shapes in the mask layout is extremely complex and time-consuming, significantly slowing down the optimization process.

[0035] Furthermore, as semiconductor process nodes continue to shrink, the number of patterns on mask layouts is also increasing. If mask layout optimization continues using the aforementioned methods, the computing resources and time required will increase exponentially, further negatively impacting the mask layout optimization rate during chip manufacturing.

[0036] To address the technical issues discussed above, embodiments of the present application provide a mask layout optimization method, apparatus, storage medium, and program product. The method includes performing an initial adjustment based on the adjustable range of each mask pattern to be optimized on the mask layout, thereby obtaining multiple initially adjusted patterns. Isolated edges in the initially adjusted patterns are considered optimized, and the remaining patterns are considered patterns to be inspected.

[0037] The patterns to be inspected can then be subjected to multiple rounds of mask rule checks. After each round of inspection, any patterns that do not meet the preset mask manufacturing rules are adjusted and rolled back, and the next round of mask rule checks is performed. Patterns to be inspected that meet the rules and reach the limits of the adjustable range are considered optimized patterns, while the remaining patterns that do not meet the rules or do not reach the limits of the adjustable range are considered patterns to be readjusted. Finally, the patterns to be readjusted can be subjected to multiple rounds of over-de-readjustment processing to obtain an optimized mask layout in which all patterns are optimized.

[0038] The technical solution provided by the embodiments of this application enables the sequential optimization of completed patterns during multi-round mask layout optimization, thereby gradually reducing the number of patterns to be optimized. Compared to traditional pattern optimization methods, this significantly reduces computing power and time costs, greatly improving the optimization rate for mask layouts, thereby improving the processing efficiency of the optical proximity effect correction process and chip production efficiency.

[0039] The execution subject used in the embodiments of the present application may be a terminal device, such as a desktop computer, a laptop computer, or a remote control device, such as a server. Furthermore, the execution subject used in the embodiments of the present application may also be an execution subject in the form of software, such as a client or software program installed in a terminal device. The execution subject of the technical solution provided in the embodiments of the present application is not strictly limited here, and can be flexibly selected and set according to the application scenario and actual needs.

[0040] Regarding the mask layout optimization method, device, storage medium and program product provided in the embodiments of the present application, the corresponding specific application scenarios are not strictly limited in this application and can be determined according to actual needs.

[0041] For example, when correcting the optical proximity effect before photolithography on the mask layout during chip design and production, the mask layout optimization method provided in the embodiment of the present application can first perform an initial adjustment on each mask pattern to be optimized on the mask layout, and then perform multiple rounds of mask rule checks and adjustment backoffs. Finally, multiple rounds of readjustment can be performed on each pattern to address the over-solution problem, and finally an optimized mask layout can be obtained.

[0042] During the optimization process of the technical solution provided in the embodiments of the present application, optimized graphics can be determined one by one. For example, isolated edges in the graphics after initial adjustment can be filtered out, and graphics to be checked that meet preset mask manufacturing rules and reach the limit of the adjustable range can be checked. This allows the number of graphics required for corresponding optimization operations to be gradually reduced during multiple rounds of mask rule checking and readjustment. The technical solution provided in the embodiments of the present application can significantly reduce the amount of data processing, save computing resources and time costs, effectively improve the optimization rate of the mask layout, and thus improve the efficiency of the overall chip production process.

[0043] It should be noted that the application scenarios described in the above embodiments of the present application are intended to more clearly illustrate the technical solutions of the embodiments of the present application and do not constitute a limitation on the technical solutions provided in the embodiments of the present application. Those skilled in the art will appreciate that as new application scenarios emerge, the technical solutions provided in the embodiments of the present application will also be applicable to similar technical problems.

[0044] Figure 1 A flowchart of a mask layout optimization method provided for one embodiment of the present application.

[0045] like Figure 1 As shown in , the mask pattern optimization method provided by the embodiment of the present application includes steps S101 to S105.

[0046] S101: Determine adjustable ranges of a plurality of mask patterns to be optimized on a mask layout.

[0047] S102: performing initial adjustment on each mask pattern to be optimized based on the adjustable range to obtain an initially adjusted pattern corresponding to each mask pattern to be optimized, and taking the pattern other than the isolated edge in the initially adjusted pattern as a pattern to be checked.

[0048] S103: performing multiple rounds of mask rule checks on at least one pattern to be inspected, performing initial adjustment and rollback processing on the pattern to be inspected that does not meet the preset mask manufacturing rules after each round of mask rule checks, performing the next round of mask rule checks on the pattern after the rollback processing, and taking the pattern to be inspected that meets the preset mask manufacturing rules and reaches the limit of the adjustable range as the optimized pattern. After multiple rounds of mask rule checks, taking the pattern to be inspected that does not meet the preset mask manufacturing rules or does not reach the limit of the adjustable range as the pattern to be readjusted;

[0049] S104: performing multiple rounds of over-de-refocusing processing on at least one pattern to be refocused to obtain an optimized mask layout.

[0050] In step S101, the technical solution provided in the embodiments of the present application can determine the corresponding adjustable range for each mask pattern to be optimized on the mask layout to be optimized. The adjustable range corresponding to each mask pattern to be optimized can be represented by a combination of the adjustable ranges corresponding to the edges to be adjusted that comprise the mask pattern to be optimized. Specifically, the adjustable range can represent the maximum displacement limit corresponding to each edge to be adjusted in the mask pattern to be optimized.

[0051] The specific process for determining the adjustable range and the corresponding criteria are not strictly limited in the embodiments of this application. In some embodiments, the criteria for determining the adjustable range of the mask pattern to be optimized can be based on design rule constraints corresponding to the mask layout, such as the physical limits of the mask manufacturing process, or can be based on optical proximity constraints corresponding to the mask layout, such as the diffraction limit of each mask pattern during subsequent photolithography imaging, or can be based on process window constraints of the actual production process.

[0052] In other embodiments, the method for determining the adjustable range and the judgment criteria may also be other feasible methods and standards, or may be a combination of multiple standards in the above examples. They are not strictly limited here and can be flexibly selected and set according to actual needs and application scenarios.

[0053] In step S102, the technical solution provided in the embodiment of the present application can perform an initial adjustment on each mask pattern to be optimized on the mask layout based on the above-mentioned adjustable range, and regard the isolated edges in the pattern after the initial adjustment as optimized, and the remaining patterns as patterns to be checked.

[0054] Specifically, in an embodiment provided in the present application, each mask pattern to be optimized may be initially adjusted within a corresponding adjustable range according to a preset adjustment parameter corresponding to each mask pattern to be optimized.

[0055] The preset adjustment parameters may be predetermined adjustment parameters for each mask pattern to be optimized. In one embodiment provided herein, the preset adjustment parameters may be determined based on an optical proximity effect correction standard for the mask layout, thereby minimizing the optical impact of the optical proximity effect on the optimized mask layout during subsequent photolithography processes. Specifically, for example, the preset adjustment parameters may include pattern edge offset, pattern corner modification parameters, and the addition of auxiliary patterns for the mask pattern to be optimized.

[0056] Regarding the specific process of the initial adjustment, in some embodiments, it can be to adjust the position of the edge to be adjusted in each mask graphic to be optimized within an adjustable range according to the preset adjustment parameters corresponding to each mask graphic to be optimized, or it can also be to fine-tune the graphic spacing between multiple mask graphics to be optimized that have a spacing or position relationship.

[0057] The specific adjustment process corresponding to the initial adjustment and the specific types of the multiple mask patterns to be optimized are not strictly limited in the embodiment of the present application and can be flexibly set according to actual needs and the specific types corresponding to the mask layout.

[0058] After the initial adjustment process of the above embodiment, each mask pattern to be optimized on the mask layout can be adjusted for the first time, thereby achieving maximum optimization of the mask layout without considering the mask inspection rules, laying a solid foundation for subsequent adjustment backtracking and readjustment processes, and improving the optimization effect and optimization rate of the overall mask layout optimization process.

[0059] After the initial adjustment, the technical solution provided in the embodiment of the present application can regard the isolated edges in the graphics after the initial adjustment as optimized, and use the remaining graphics as graphics to be checked for subsequent mask rule checking processes.

[0060] Isolated edges represent edges on the mask pattern being optimized that are sufficiently distant from other patterns that any adjustments within the corresponding adjustable range will not violate the mask check rules. These edges can be considered optimized after the initial adjustment, eliminating the need for subsequent mask rule checks and readjustments.

[0061] After step S102, isolated edges can be skipped during subsequent rounds of mask rule checking and pattern realignment, significantly reducing the amount of data processing. This effectively saves computing resources and time, thereby improving the optimization rate of the overall mask layout optimization process.

[0062] In step S103, the technical solution provided by the embodiment of the present application can perform multiple rounds of mask rule checks on each pattern to be checked after the processing in step S102. After each round of mask rule checks, the pattern to be checked that does not meet the preset mask manufacturing rules is adjusted and rolled back to a certain extent.

[0063] The number of rounds of mask rule checking corresponding to the embodiment of this application is not strictly limited and can be flexibly set based on the number of mask patterns to be optimized and the actual optimization rate requirements. The reason for performing multiple rounds of mask rule checking is to prevent new pattern violations after a single mask rule check and initial adjustment rollback. Through multiple rounds of mask rule checking, the mask pattern can be guaranteed to comply with the preset mask manufacturing rules with the highest probability, thereby improving the optimization effect of the mask layout.

[0064] At the same time, when performing the initial mask rule check on each pattern to be inspected, the pattern to be inspected that meets the preset mask manufacturing rules in the initial inspection and has reached the corresponding adjustable range limit after the initial adjustment can be regarded as an optimized completed pattern, that is, it will no longer participate in the subsequent pattern readjustment process.

[0065] Then, the remaining graphics that have not been optimized after multiple rounds of mask rule checks, that is, the graphics after inspection that still do not meet the preset mask manufacturing rules after all rounds of mask rule checks and initial back-off adjustments, or the graphics after inspection that meet the preset mask manufacturing rules after only at least one initial adjustment back-off but have not reached the limit of the adjustable range, can be used as the graphics to be readjusted based on the subsequent readjustment process.

[0066] Taking the initial adjustment of the spacing between two mask patterns to be optimized as an example, the specific processing process of treating the pattern to be inspected as the optimized completed pattern that meets the preset mask manufacturing rules and has reached the corresponding adjustable range limit after the initial adjustment is illustrated. For details, please refer to Figures 2(a) and 2(b).

[0067] FIG. 2( a ) and FIG. 2( b ) are schematic diagrams of determining an optimized pattern after an initial mask rule check according to an embodiment of the present application.

[0068] Line segment 201 and line segment 202 are two line segments of the mask pattern to be optimized whose spacing needs to be adjusted, and boundary 203 is the maximum displacement boundary corresponding to line segment 201. The area between line segment 201 and boundary 203 constitutes the adjustable range of line segment 201. That is, when line segment 201 is moved toward line segment 202, the moved position of line segment 201 cannot exceed boundary 203.

[0069] Boundary 204 is the maximum displacement boundary corresponding to line segment 202. The area between line segment 202 and boundary 204 constitutes the adjustable range of line segment 202, that is, when line segment 202 moves toward line segment 201, the moved position of line segment 202 cannot exceed boundary 204.

[0070] Boundary 205 and boundary 206 are boundary positions corresponding to the minimum pattern spacing specified between line segment 201 and line segment 202 in the preset mask manufacturing rules. The perpendicular distance from any point on either boundary 205 or boundary 206 to the other boundary is the minimum pattern spacing.

[0071] Figure 2(a) shows two mask patterns to be optimized before the initial adjustment, and Figure 2(b) shows two mask patterns to be optimized after the initial adjustment. Figure 2(a) to Figure 2(b) , line segment 201 is adjusted to the extreme position of boundary 203, and line segment 202 is adjusted to the extreme position of boundary 204. Furthermore, the adjusted position of line segment 201 does not exceed boundary 205, and the adjusted position of line segment 202 does not exceed boundary 206. That is, the spacing between adjusted line segments 201 and 202 does not violate the minimum pattern spacing specified by the preset mask manufacturing rules.

[0072] In this case, after performing the initial mask rule check on the mask pattern to be optimized after the initial adjustment in Figure 2(b), it can be determined that line segments 201 and line segments 202 meet the preset mask manufacturing rules and have reached the limit of the adjustable range. It can be determined that the optimized pattern is completed, that is, the subsequent multiple rounds of mask rule checks and readjustment processes can be skipped.

[0073] Regarding the specific processing process corresponding to each round of mask rule checking: In one embodiment provided in the present application, in each round of mask rule checking, a mask rule check can be performed on each pattern to be checked after the initial adjustment based on preset mask manufacturing rules.

[0074] The specific content of the preset mask manufacturing rules is not strictly defined in this application. In some embodiments, the preset mask manufacturing rules may include, but are not limited to, geometric dimension rules such as minimum feature size, minimum pattern spacing, and minimum internal and external angles; pattern complexity rules such as maximum number of vertices, minimum radius of curvature, and longest straight edge; and auxiliary pattern rules such as maximum width of auxiliary patterns and minimum spacing between auxiliary patterns. These rules can be flexibly set based on the actual application scenario and the specific type of mask layout.

[0075] For each pattern to be inspected, after each round of mask rule inspection, if it is determined that the pattern to be inspected does not meet the preset mask manufacturing rules, it is determined that the pattern to be inspected has not passed the mask rule inspection of this round, and it is necessary to make an initial adjustment and rollback and then conduct the next round of mask rule inspection. The pattern after adjustment and rollback can be used as the pattern to be inspected for the next round of mask rule inspection.

[0076] If it is determined that the pattern to be inspected meets the preset mask manufacturing rules, the pattern to be inspected is considered to have passed the current round of mask rule checking, meaning that a further round of mask rule checking is not required. During the initial mask rule checking, it is determined whether the pattern to be inspected that meets the preset mask manufacturing rules has reached the limit of the adjustable range after initial adjustment. If so, the corresponding pattern to be inspected is considered to be an optimized pattern. In subsequent rounds of mask rule checking beyond the first round, if the pattern to be inspected is determined to meet the preset mask manufacturing rules, the pattern is used as the pattern to be re-adjusted in the subsequent re-adjustment process.

[0077] The reason we only consider patterns that reach the adjustable range limit during the first round of mask rule checking is that only patterns that have undergone initial adjustment are likely to both meet the preset mask manufacturing rules and reach the adjustable range limit. Patterns in subsequent rounds of mask rule checking have all undergone at least one initial adjustment and are unlikely to reach the adjustable range limit again. Therefore, patterns that pass subsequent rounds of mask rule checking can be directly used as patterns for readjustment and subsequent transitional de-readjustment processing.

[0078] The termination condition for the mask rule checking process corresponding to step S103 may specifically be that after initial adjustment, all patterns to be checked meet the preset mask manufacturing rules after undergoing at least one round of mask rule checking, or the mask rule checking process is terminated when multiple rounds of mask rule checking have been completed. The specific number of multiple rounds is not strictly limited in this application and can be flexibly set based on actual needs and application scenarios.

[0079] Regarding the specific processing of the rollback adjustment operation in each round of mask rule checking, in one embodiment provided in the present application, for a pattern to be checked that does not meet the preset mask rule, violation information corresponding to the pattern to be checked can be determined according to the preset mask rule.

[0080] The violation information may include, but is not limited to, the violation type corresponding to the graphics being inspected, as well as the locations of the graphics within the graphics being inspected that do not meet the preset masking rules. Examples of violation types include graphics that are too small, insufficient image spacing, or too many vertices. The locations of the graphics that do not meet the preset masking rules may specifically indicate at least a portion of the graphics within the graphics being inspected.

[0081] Based on the violation information and the preset mask rules, a rollback parameter corresponding to the initial adjustment rollback can be determined for at least a portion of the inspected pattern that does not meet the preset mask rules. For example, the rollback displacement value corresponding to the violating edge in the inspected pattern after the initial adjustment or after the previous round of initial adjustment rollback can be determined. The rollback parameter can specifically represent the minimum adjustment parameter required for the inspected pattern to meet the preset mask manufacturing rules.

[0082] Based on the rollback parameters, unchecked patterns that don't meet the preset mask manufacturing rules can be adjusted back. These adjusted patterns then serve as the next round of mask rule checks. This multi-round mask rule check and initial adjustment and rollback process effectively ensures that all patterns in the final optimized mask layout meet the preset mask manufacturing rules. This maximizes the optical correction effect of the initial adjustments while ensuring that each mask pattern conforms to the rules, effectively improving optimization results.

[0083] Through the processing of the above-described embodiments, accurate and effective mask rule checking can be achieved for each pattern to be inspected after initial adjustment, providing accurate and effective data for subsequent readjustment processes, thereby improving the optimization effect of the overall mask layout optimization process. Furthermore, the technical solution provided by the embodiments of the present application can, during the initial mask rule check, select the pattern to be inspected that meets the preset mask manufacturing rules and has reached the limit of the movable range after initial adjustment as the optimized pattern. This operation significantly reduces the amount of data required to be processed during subsequent readjustment processes, thereby improving the optimization of the overall mask layout optimization process.

[0084] In step S104, the technical solution provided by the embodiments of the present application can perform multiple rounds of over-de-resize processing on the patterns to be resized after undergoing multiple rounds of mask rule checks, thereby determining an optimized pattern corresponding to each pattern to be resized. The optimized pattern corresponding to the pattern to be resized can then be combined with the optimized patterns determined in the previous steps and the isolated edges deemed optimized to be complete to obtain an optimized mask layout.

[0085] The reason why the over-decoding and readjustment processing is required for the unoptimized graphics after multiple rounds of mask rule checks is that in the embodiment of the present application, it is considered that the adjustment back-off operation in step S103 may cause a large back-off range of the graphics to be checked, resulting in a gap between the graphics after inspection and the graphics after the initial adjustment corresponding to the preset mask manufacturing rules, that is, there is an over-solution, and the existence of the over-solution will seriously weaken the correction effect of the optimized mask layout on the optical proximity effect.

[0086] Based on this, in an embodiment provided in the present application, the graphics to be realigned obtained after step S103 can be subjected to multiple rounds of over-de-realignment processing, so that each graphics to be realigned can retain the optical proximity effect correction effect corresponding to the graphics after the initial adjustment to the maximum extent while meeting the preset mask manufacturing rules, thereby improving the optimization effect of the overall mask layout.

[0087] Specifically, the specific process of each round of over-de-re-scaling processing is similar to steps S101 to S103 above, except that the filtering operation for isolated edges in step S102 is omitted. First, in each round of over-de-re-scaling processing, corresponding re-scaling parameters and re-scaling ranges can be determined for each image to be re-scaled.

[0088] The rescale parameter, similar to the rollback parameter in step S103, represents the specific adjustment value for the rescaled pattern. Specifically, it includes the displacement value of each edge in the rescaled pattern. The rescale parameter differs from the rollback parameter in that it adjusts the rescaled pattern toward the initial adjustment, rather than reversing the initial adjustment. The rescale range is similar to the adjustable range in step S101, except that the target graphic object changes from the mask pattern to be optimized to the rescaled pattern.

[0089] Then, the pattern to be rescaled can be rescaled according to the rescale parameters within the corresponding rescale range to obtain a rescaled pattern corresponding to the round of over-demiscaling. This process is similar to the initial adjustment of the mask pattern to be optimized in step S102.

[0090] Next, a mask rule check similar to the multiple rounds in step S103 can be performed on each secondary adjustment pattern. After each round of mask rule check, secondary adjustment rollback can also be performed on secondary adjustment patterns that do not meet the preset mask manufacturing rules. The number of mask rule check rounds during the readjustment process can be the same as the number of mask rule check rounds after the initial adjustment described above.

[0091] Furthermore, during the initial mask rule check for the secondary adjustment pattern, any secondary adjustment pattern that meets the preset mask manufacturing rules and has reached the readjustment range limit after secondary adjustment can be considered the optimized pattern. Subsequent mask rule checks will not identify the optimized pattern as completed, as it is no longer possible to reach the readjustment range limit after at least one secondary adjustment rollback operation.

[0092] After each round of mask rule checking, the remaining secondary adjusted patterns that have undergone secondary adjustment and fallback are used as the secondary adjusted patterns for the next round of mask rule checking, similar to the patterns to be checked in step S103 above. Patterns that have not been considered optimized after multiple rounds of mask rule checking are used as the patterns to be readjusted for the next round of over-de-readjustment processing, and this cycle repeats.

[0093] When the maximum preset number of over-de-resize cycles has been completed for the pattern to be resized, or when no more patterns to be resized require over-de-resize processing, the resize process can be terminated, and the resized patterns corresponding to the patterns to be resized can be used as optimized patterns. At this point, all mask patterns to be optimized on the unoptimized mask layout have been optimized in different steps, ultimately resulting in an optimized mask layout.

[0094] In addition, the number of rounds corresponding to the over-demosing process is not strictly limited in the embodiment of the present application and can be flexibly set according to the actual optimization rate requirements and the number of mask patterns.

[0095] Regarding the specific process of determining the retuning parameters in the over-demodification process, in one embodiment provided in the present application, for each pattern to be retuned, a pattern position deviation between the pattern to be retuned and the corresponding initially adjusted pattern can be determined. The determined pattern position deviation can be used to indicate the degree of difference between the pattern to be retuned and an ideal pattern that can minimize the effect of optical proximity.

[0096] Based on the graphic position deviation and the above-mentioned preset mask manufacturing rules, the readjustment parameters that can make the graphic to be readjusted closest to the initially adjusted graphic while satisfying the preset mask manufacturing rules can be determined, such as the displacement value of the readjustment range corresponding to a certain edge in the graphic to be readjusted.

[0097] The above-described embodiment enables precise determination of realignment parameters, providing a practical basis for the over-de-realignment process while also enhancing the optimization effect for each mask pattern to be optimized. While meeting pre-defined mask manufacturing rules, the ability to correct for optical proximity effects is maximized, significantly improving the optimization effect of the overall mask layout.

[0098] Through the above-described embodiments, efficient and accurate over-de-refocusing can be performed on each pattern to be refocused, and each pattern to be refocused can be finally optimized to obtain an optimized mask layout. Multiple rounds of refocusing can significantly improve the optimization effect of the mask layout. In each round of over-de-refocusing, the mask rule check step can also be used to optimize the pattern determination, gradually reducing the number of patterns to be refocused, increasing the refocusing rate, and significantly improving the optimization rate of the overall mask layout optimization process.

[0099] The above is the specific content and corresponding embodiments corresponding to each step in the mask layout optimization method provided in the embodiment of the present application. In order to facilitate the overall understanding of the technical solution provided by the embodiment of the present application and the effect of improving the optimization rate, the following is a further introduction from the calculation amount of each link in the specific optimization process. For details, please refer to the following formulas (1) and (2):

[0100] C1=Nl+mNl+nN(2l+ml) Formula (1)

[0101]

[0102] A1=N-a1,A2=A1-a2,B i '=B i -b i

[0103] Formula (1) represents the computational effort required for optimizing each mask pattern to be optimized in a conventional mask layout. N represents the number of mask patterns to be optimized. l represents the computational effort required to determine the adjustable range and corresponding adjustments for a pattern, or to perform mask rule checks and determine fallback parameters, or to determine readjustment parameters. Specifically, it represents the computational effort and time required for the corresponding operations. m represents the number of mask rule checks, and n represents the number of over-de-readjustment rounds.

[0104] The first term Nl on the right side of formula (1) represents the amount of computation required to determine and adjust the adjustable range of all mask graphics to be optimized in the mask layout, mNl represents the amount of computation required to perform m rounds of mask rule checks and adjustment backoff on all mask graphics to be optimized, and nN(2l+ml) represents the amount of computation required to perform n rounds of over-de-re-adjustment processing on all mask graphics to be optimized that have undergone m rounds of mask rule checks, including Nl calculations for determining the readjustment parameters, Nl calculations for the readjustment range and secondary adjustment, and m rounds of mask rule checks and adjustment backoff.

[0105] It can be seen that when performing mask layout optimization using conventional techniques, as the number N of mask patterns to be optimized increases, the overall computational effort C1 increases dramatically, severely slowing down the optimization rate of the mask layout. The technical solution provided by the embodiments of the present application can effectively improve the optimization rate of the mask layout, specifically corresponding to the above formula (2), where the computational effort for determining the adjustable range corresponding to the number N of mask patterns to be optimized and the corresponding adjustments are the same as in formula (1), both being N1.

[0106] In formula (2), A1 represents the number of graphics to be checked, and A2 represents the number of graphics to be checked remaining after the initial mask rule check, with A1 ≥ A2. Before performing m rounds of mask rule checks, the isolated edges in the graphics after the initial adjustment can be considered as optimized, and the remaining graphics as graphics to be checked. The number of isolated edges is a1 in formula (2). After the initial mask rule check, the graphics in the graphics after the initial adjustment that meet the preset mask manufacturing rules and have reached the limit of the adjustable range can also be considered as optimized graphics. The number is a2 in formula (2). The computational complexity of this mask rule check process becomes [A1l+(m-1)A2l], which is significantly reduced compared to mNl in formula (1).

[0107] During the readjustment process, B in formula (2) i Indicates the number of graphics to be re-adjusted corresponding to each round of excessive de-adjustment processing, B i Similar to A2 above, it represents the number of secondary adjustment patterns remaining after the initial mask rule check in each round of excessive demodulation processing, B i ≥B i '≥B i+1 . b i The number of graphics that meet the preset mask manufacturing rules and have reached the limit of the adjustable range after secondary adjustment. i l corresponds to the amount of calculation required to determine the rescaling parameters and rescaling range corresponding to the image to be rescaled in each round of the over-demoscaling process.

[0108] After optimizing and filtering the graphics in each round of re-adjustment, the number of graphics to be re-adjusted in the next round can be effectively reduced. The specific calculation amount is Compared with nN(2l+ml) in formula (1), the number of calculations in the mask rule checking process and the readjustment process is significantly reduced, which greatly reduces the amount of calculation C2 required for the overall mask layout optimization process and significantly improves the optimization rate of the mask layout optimization process.

[0109] The above is a specific implementation of the mask layout optimization method provided in the embodiments of this application. The technical solution provided by the embodiments of this application can optimize and complete the determination of graphics one by one during the multi-round mask layout optimization process, including the initial mask rule check during isolated edges, normal mask inspection, and readjustment to determine graphics that meet the mask inspection rules and reach the limit of the adjustable range, thereby gradually reducing the number of graphics to be optimized. Compared with traditional graphics optimization methods, this method significantly reduces the consumption of computing resources and time costs, greatly improving the optimization rate of the mask layout, and thus improving the processing efficiency of the optical proximity effect correction process and chip production efficiency.

[0110] Based on the mask layout optimization method provided in the above embodiment, the present application also provides a specific implementation method of the mask layout optimization device, please refer to the following embodiments.

[0111] Figure 3 A structural schematic diagram of a mask layout optimization device provided in another embodiment of the present application.

[0112] A range determination unit 301 is used to determine the adjustable range of multiple mask patterns to be optimized on the mask layout;

[0113] The initial adjustment unit 302 is configured to perform initial adjustment on each mask pattern to be optimized based on the adjustable range, obtain an initially adjusted pattern corresponding to each mask pattern to be optimized, and use the pattern other than the isolated edge in the initially adjusted pattern as the pattern to be checked;

[0114] a mask rule checking unit 303 configured to perform multiple rounds of mask rule checking on at least one pattern to be checked, perform initial adjustment and rollback processing on patterns to be checked that do not satisfy preset mask manufacturing rules after each round of mask rule checking, perform the next round of mask rule checking on the patterns after rollback processing, and select patterns to be checked that satisfy the preset mask manufacturing rules and reach the limit of the adjustable range as optimized patterns; and select patterns to be checked that do not satisfy the preset mask manufacturing rules or do not reach the limit of the adjustable range as patterns to be readjusted after multiple rounds of mask rule checking;

[0115] The pattern re-adjustment unit 304 is configured to perform multiple rounds of transition de-re-adjustment processing on at least one pattern to be re-adjusted to obtain an optimized mask layout.

[0116] In one embodiment, the graphic rescaling unit 304 is specifically configured to determine, in each round of transitional descaling, a rescaling parameter and a rescaling range corresponding to each graphic to be rescaled in the transitional descaling process, wherein the rescaling parameter represents a displacement value of each edge to be rescaled of the graphic to be rescaled.

[0117] Performing secondary adjustment on the image to be retuned according to the retuning parameter and the retuning range to obtain a secondary adjustment image corresponding to the over-de-retuning process of the image to be retuned in this round;

[0118] Perform multiple rounds of mask rule checks on the secondary adjustment patterns. After each round of mask rule checks, perform secondary adjustment rollback processing on the secondary adjustment patterns that do not meet the preset mask manufacturing rules, and perform the next round of mask rule checks on the patterns after rollback processing.

[0119] The secondary adjusted pattern that meets the preset mask manufacturing rules and reaches the readjustment range limit is regarded as the optimized completed pattern. After multiple rounds of mask rule checks, the secondary adjusted pattern that does not meet the preset mask manufacturing rules or does not reach the readjustment range limit is regarded as the pattern to be readjusted in the next round of excessive de-readjustment processing;

[0120] After multiple rounds of over-demoscaling processing or when there is no pattern to be realigned, the mask layout optimization is completed and an optimized mask layout is obtained.

[0121] In one embodiment, the pattern re-adjustment unit 304 is specifically configured to determine, for each pattern to be re-adjusted, a pattern position deviation between the pattern to be re-adjusted and a pattern corresponding to the pattern to be re-adjusted after initial adjustment.

[0122] According to the pattern position deviation and the preset mask manufacturing rule, the re-adjustment parameter corresponding to the over-de-re-adjustment process of the pattern to be re-adjusted in this round is determined.

[0123] In one embodiment, the initial adjustment unit 302 is specifically configured to determine preset adjustment parameters corresponding to a plurality of mask patterns to be optimized;

[0124] For each mask pattern to be optimized, the mask pattern to be optimized is initially adjusted according to the preset adjustment parameters and adjustable range corresponding to the mask pattern to be optimized.

[0125] In one embodiment, the initial adjustment unit 302 is specifically configured to obtain an optical proximity effect correction standard corresponding to the mask layout;

[0126] Based on the optical proximity effect correction standard, a preset adjustment parameter corresponding to each mask pattern to be optimized is determined.

[0127] In one embodiment, the mask rule checking unit 303 is specifically configured to determine, for each pattern to be checked that does not satisfy a preset mask manufacturing rule, violation information corresponding to the pattern to be checked according to the preset mask manufacturing rule, wherein the violation information includes a violation type and a pattern violation location corresponding to the pattern to be checked;

[0128] Determining a fallback parameter corresponding to the pattern to be inspected based on the violation information and the preset mask manufacturing rules, where the fallback parameter represents a minimum adjustment value required to ensure that the pattern to be inspected satisfies the preset mask manufacturing rules;

[0129] According to the rollback parameters, the graphics to be checked are initially adjusted and rolled back.

[0130] Figure 4 A schematic diagram of the hardware structure of a mask layout optimization device provided in another embodiment of the present application.

[0131] The mask layout optimization device may include a processor 401 and a memory 402 storing computer program instructions.

[0132] Specifically, the processor 401 may include a central processing unit (CPU), or an application-specific integrated circuit (ASIC), or may be configured to implement one or more integrated circuits of the embodiments of the present application.

[0133] Memory 402 may include a large capacity memory for data or instructions. By way of example and not limitation, memory 402 may include a hard disk drive (HDD), a floppy disk drive, a flash memory, an optical disk, a magneto-optical disk, a magnetic tape, or a universal serial bus (USB) drive, or a combination of two or more of these. Where appropriate, memory 402 may include removable or non-removable (or fixed) media. Where appropriate, memory 402 may be inside or outside the integrated gateway disaster recovery device. In a specific embodiment, memory 402 is a non-volatile solid-state memory.

[0134] In certain embodiments, memory 402 includes read-only memory (ROM). The ROM may be mask-programmed ROM, programmable ROM (PROM), erasable PROM (EPROM), electrically erasable PROM (EEPROM), electrically alterable ROM (EAROM), or flash memory, or a combination of two or more thereof, where appropriate.

[0135] The processor 401 reads and executes computer program instructions stored in the memory 402 to implement any one of the mask layout optimization methods in the above embodiments.

[0136] In one example, the mask layout optimization device may further include a communication interface 403 and a bus 410. Figure 4 As shown, the processor 401 , the memory 402 , and the communication interface 403 are connected via a bus 410 and communicate with each other.

[0137] The communication interface 403 is mainly used to implement communication between various modules, devices, units and / or equipment in the embodiments of the present application.

[0138] Bus 410 includes hardware, software or both, and the components of online data flow metering equipment are coupled to each other. For example, but not limitation, bus may include accelerated graphics port (AGP) or other graphics bus, enhanced industry standard architecture (EISA) bus, front side bus (FSB), hypertransport (HT) interconnection, industry standard architecture (ISA) bus, infinite bandwidth interconnection, low pin count (LPC) bus, memory bus, micro channel architecture (MCA) bus, peripheral component interconnection (PCI) bus, PCI-Express (PCI-X) bus, serial advanced technology attachment (SATA) bus, video electronics standard association local (VLB) bus or other suitable bus or two or more of these combinations. In appropriate cases, bus 410 may include one or more buses. Although the present application embodiment describes and shows a specific bus, the application considers any suitable bus or interconnection.

[0139] In addition, in conjunction with the mask layout optimization method in the above embodiments, the present application can provide a computer storage medium for implementation. The computer storage medium stores computer program instructions; when the computer program instructions are executed by a processor, any of the mask layout optimization methods in the above embodiments is implemented.

[0140] An embodiment of the present application also provides a computer program product, including a computer program, which implements any one of the mask layout optimization methods in the above embodiments when the computer program is processed and executed.

[0141] It should be understood that the present application is not limited to the specific configurations and processes described above and illustrated in the figures. For the sake of brevity, a detailed description of known methods is omitted here. In the above embodiments, several specific steps are described and illustrated as examples. However, the method process of the present application is not limited to the specific steps described and illustrated. Those skilled in the art can make various changes, modifications, and additions, or change the order of the steps after understanding the spirit of the present application.

[0142] The functional blocks shown in the above-described block diagram can be implemented as hardware, software, firmware or a combination thereof. When implemented in hardware, they can be, for example, electronic circuits, application specific integrated circuits (ASICs), appropriate firmware, plug-ins, function cards, etc. When implemented in software, the elements of the present application are programs or code segments that are used to perform the required tasks. The program or code segment can be stored in a machine-readable medium, or transmitted on a transmission medium or a communication link by a data signal carried in a carrier wave. "Machine-readable medium" can include any medium that can store or transmit information. Examples of machine-readable media include electronic circuits, semiconductor memory devices, ROMs, flash memories, erasable ROMs (EROMs), floppy disks, CD-ROMs, optical disks, hard disks, optical fiber media, radio frequency (RF) links, etc. The code segment can be downloaded via a computer network such as the Internet, an intranet, etc.

[0143] It should also be noted that the exemplary embodiments mentioned in this application describe some methods or systems based on a series of steps or devices. However, this application is not limited to the order of the above steps. In other words, the steps can be performed in the order mentioned in the embodiments, or in a different order, or several steps can be performed simultaneously.

[0144] Aspects of the present disclosure have been described above with reference to the flowcharts and / or block diagrams of the methods, devices (systems) and computer program products according to the embodiments of the present disclosure. It should be understood that each box in the flowchart and / or block diagram and the combination of each box in the flowchart and / or block diagram can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer or other programmable data processing device to produce a machine so that these instructions executed by the processor of the computer or other programmable data processing device enable the implementation of the function / action specified in one or more boxes of the flowchart and / or block diagram. Such a processor can be, but is not limited to, a general-purpose processor, a special-purpose processor, a special application processor or a field programmable logic circuit. It is also understood that each box in the block diagram and / or flowchart and the combination of the boxes in the block diagram and / or flowchart can also be implemented by dedicated hardware that performs the specified function or action, or can be implemented by a combination of dedicated hardware and computer instructions.

[0145] The above description is only a specific embodiment of the present application. Those skilled in the art will clearly understand that for the convenience and brevity of description, the specific working processes of the systems, modules and units described above can refer to the corresponding processes in the aforementioned method embodiments, and will not be repeated here. It should be understood that the scope of protection of the present application is not limited thereto. Any person skilled in the art can easily think of various equivalent modifications or replacements within the technical scope disclosed in the present application, and these modifications or replacements should be included in the scope of protection of the present application.

Claims

1. A mask layout optimization method, characterized in that: include: Determining adjustable ranges of multiple mask patterns to be optimized on a mask layout; Performing an initial adjustment on each of the mask patterns to be optimized based on the adjustable range to obtain an initially adjusted pattern corresponding to each of the mask patterns to be optimized, and using patterns other than isolated edges in the initially adjusted patterns as patterns to be inspected; Performing multiple rounds of mask rule checks on at least one of the patterns to be inspected, performing initial adjustment and rollback processing on the patterns to be inspected that do not meet the preset mask manufacturing rules after each round of mask rule checks, and performing the next round of mask rule checks on the patterns after the rollback processing; and The pattern to be inspected that satisfies the preset mask manufacturing rules and reaches the limit of the adjustable range is regarded as an optimized pattern, and after multiple rounds of mask rule inspection, the pattern to be inspected that does not satisfy the preset mask manufacturing rules or does not reach the limit of the adjustable range is regarded as a pattern to be readjusted; Multiple rounds of over-de-resize processing are performed on at least one of the patterns to be resized to obtain an optimized mask layout.

2. The method according to claim 1, characterized in that Performing multiple rounds of over-de-resize processing on at least one of the patterns to be resized to obtain an optimized mask layout, comprising: In each round of the transitional de-re-scaling process, determining a re-scaling parameter and a re-scaling range corresponding to each of the graphics to be re-scaled in the transitional de-re-scaling process, wherein the re-scaling parameter represents a displacement value of each edge to be re-scaled of the graphics to be re-scaled; Performing secondary adjustment on the graphic to be retuned according to the retuning parameter and the retuning range to obtain a secondary adjustment graphic corresponding to the over-de-retuning process of the graphic to be retuned in this round; Performing multiple rounds of mask rule checks on the secondary adjustment pattern, performing secondary adjustment fallback processing on the secondary adjustment pattern that does not meet the preset mask manufacturing rules after each round of mask rule checks, and performing the next round of mask rule checks on the pattern after fallback processing, and The secondary adjustment pattern that satisfies the preset mask manufacturing rules and reaches the limit of the readjustment range is regarded as an optimized pattern, and after multiple rounds of mask rule checks, the secondary adjustment pattern that does not satisfy the preset mask manufacturing rules or does not reach the limit of the readjustment range is regarded as a pattern to be readjusted in the next round of excessive de-readjustment processing; After multiple rounds of excessive de-emphasis processing or when there is no pattern to be realigned, the mask layout optimization is completed to obtain the optimized mask layout.

3. The method according to claim 2, characterized in that Determining the rescaling parameters corresponding to the transitional descaling process of each of the to-be-rescaled graphics in this round includes: For each pattern to be readjusted, determining a pattern position deviation between the pattern to be readjusted and a pattern after initial adjustment corresponding to the pattern to be readjusted; According to the pattern position deviation and the preset mask manufacturing rule, a rescaling parameter corresponding to the over-de-rescale process of the pattern to be rescaled in this round is determined.

4. The method according to claim 1, wherein Performing an initial adjustment on each of the mask patterns to be optimized based on the adjustable range to obtain an initially adjusted pattern corresponding to each of the mask patterns to be optimized, comprising: Determining preset adjustment parameters corresponding to a plurality of mask patterns to be optimized; For each of the mask patterns to be optimized, initial adjustment is performed on the mask pattern to be optimized according to the preset adjustment parameters corresponding to the mask pattern to be optimized and the adjustable range.

5. The method according to claim 4, characterized in that Determining a plurality of preset adjustment parameters corresponding to the mask patterns to be optimized includes: Obtaining an optical proximity effect correction standard corresponding to the mask pattern; Based on the optical proximity effect correction standard, a preset adjustment parameter corresponding to each of the mask patterns to be optimized is determined.

6. The method according to claim 1, characterized in that For the graphics to be inspected that do not meet the preset mask manufacturing rules, initial adjustment and rollback processing is performed, including: For each pattern to be inspected that does not meet the preset mask manufacturing rules, determining violation information corresponding to the pattern to be inspected according to the preset mask manufacturing rules, wherein the violation information includes a violation type and a pattern violation location corresponding to the pattern to be inspected; Determining, based on the violation information and the preset mask manufacturing rules, a fallback parameter corresponding to the pattern to be inspected, wherein the fallback parameter represents a minimum adjustment value required to ensure that the pattern to be inspected satisfies the preset mask manufacturing rules; According to the rollback parameters, the graphic to be checked is initially adjusted and rolled back.

7. A mask layout optimization device, characterized in that: include: A range determination unit, used to determine the adjustable range of multiple mask patterns to be optimized on the mask layout; an initial adjustment unit, configured to perform initial adjustment on each of the mask patterns to be optimized based on the adjustable range, obtain an initially adjusted pattern corresponding to each of the mask patterns to be optimized, and use the pattern other than the isolated edge in the initially adjusted pattern as a pattern to be inspected; a mask rule checking unit, configured to perform multiple rounds of mask rule checking on at least one of the patterns to be checked, perform an initial adjustment and fallback process on the patterns to be checked that do not satisfy the preset mask manufacturing rules after each round of mask rule checking, perform a next round of mask rule checking on the patterns after the fallback process, and use the patterns to be checked that satisfy the preset mask manufacturing rules and reach the limit of the adjustable range as optimized patterns; and after multiple rounds of mask rule checking, use the patterns to be checked that do not satisfy the preset mask manufacturing rules or do not reach the limit of the adjustable range as patterns to be readjusted; The pattern re-adjustment unit is used to perform multiple rounds of transition de-re-adjustment processing on at least one of the patterns to be re-adjusted to obtain an optimized mask layout.

8. An electronic device, characterized in that: The device includes: a processor and a memory storing computer program instructions; When the processor executes the computer program instructions, the mask layout optimization method according to any one of claims 1 to 7 is implemented.

9. A computer-readable storage medium, characterized in that The computer-readable storage medium stores computer program instructions, and when the computer program instructions are executed by a processor, the mask layout optimization method according to any one of claims 1 to 7 is implemented.

10. A computer program product, characterized in that When the instructions in the computer program product are executed by a processor of an electronic device, the electronic device executes the mask layout optimization method according to any one of claims 1 to 7.

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