Method for removing monochlorotrifluoromethane impurity in trifluoromethane electronic gas

CN120829337APending Publication Date: 2025-10-24PERIC SPECIAL GASES CO LTD
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Patent Information

Application Number
CN202511039177.7
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-07-28
Publication Date
2025-10-24
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Abstract

The invention belongs to the technical field of electronic gas purification, and particularly relates to a method for removing monochlorotrifluoromethane impurities in trifluoromethane electronic gas. Comprising the following steps: S1, pre-reaction dechlorination: introducing a crude product trifluoromethane into a reactor filled with a catalyst for reaction and preliminary catalysis to remove monochlorotrifluoromethane; s2, complexing adsorption: introducing the gas from which the trifluorochloromethane is preliminarily removed into an adsorber filled with an adsorbent, and adsorbing to remove trifluorochloromethane impurities again; and S3, low-temperature rectification and purification: introducing the gas discharged in the step S2 into a rectification tower to desorb monochlorotrifluoromethane to obtain high-purity trifluoromethane. According to the method provided by the invention, the content of CClF3 in the final product is less than 0.05 ppm. The method has remarkable application value in the fields of semiconductor manufacturing, photovoltaic material deposition and the like.
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Citation Information

Patent Citations

  • Method for purifying electronic-grade trifluoromethane

    CN113816827A

  • Adsorption tower for preparing electronic-grade trifluoromethane

    CN114870561A