Method for removing monochlorotrifluoromethane impurity in trifluoromethane electronic gas
CN120829337APending Publication Date: 2025-10-24PERIC SPECIAL GASES CO LTD
Patent Information
- Application Number
- CN202511039177.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-07-28
- Publication Date
- 2025-10-24
Abstract
The invention belongs to the technical field of electronic gas purification, and particularly relates to a method for removing monochlorotrifluoromethane impurities in trifluoromethane electronic gas. Comprising the following steps: S1, pre-reaction dechlorination: introducing a crude product trifluoromethane into a reactor filled with a catalyst for reaction and preliminary catalysis to remove monochlorotrifluoromethane; s2, complexing adsorption: introducing the gas from which the trifluorochloromethane is preliminarily removed into an adsorber filled with an adsorbent, and adsorbing to remove trifluorochloromethane impurities again; and S3, low-temperature rectification and purification: introducing the gas discharged in the step S2 into a rectification tower to desorb monochlorotrifluoromethane to obtain high-purity trifluoromethane. According to the method provided by the invention, the content of CClF3 in the final product is less than 0.05 ppm. The method has remarkable application value in the fields of semiconductor manufacturing, photovoltaic material deposition and the like.
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Citation Information
Patent Citations
Method for purifying electronic-grade trifluoromethane
CN113816827A
Adsorption tower for preparing electronic-grade trifluoromethane
CN114870561A