Process chamber, control method thereof and semiconductor process equipment

Abstract

The invention provides a process chamber, a control method thereof and semiconductor process equipment. The process cavity comprises a cavity body, and an ejector pin mechanism and a heating piece which are arranged in the cavity body; the heating piece is used for heating a wafer under the condition that the wafer is supported by the ejector pin mechanism; wherein the heating element and the wafer can be switched between a first position relation and a second position relation; under the condition of the first position relation, the heating rate of the edge of the wafer is greater than the heating rate of the center of the wafer; under the condition of the second position relation, the heating rate of the center of the wafer is greater than the heating rate of the edge of the wafer. According to the invention, the distance between the heating element and the wafer is variable, so that the temperature uniformity of the surface of the whole wafer after heating can be ensured by adjusting the distance between the heating element and the wafer.

Description

TECHNICAL FIELD

[0001] Embodiments of the present disclosure relate to, but are not limited to, the field of semiconductor, and in particular, to a process chamber and a control method thereof, and a semiconductor process equipment. BACKGROUND

[0002] The mainstream film deposition method is physical vapor deposition (PVD) technology, which uses a magnetron sputtering to generate plasma in the chamber, and then deposits the plasma on the wafer surface. In the mainstream technology of copper as metal interconnection, a trench and a via are formed on the substrate by photolithography technology, and then a barrier layer and a copper seed layer are deposited by PVD, and finally the trench and the via are filled by electroplating.

[0003] With the reduction of wafer size, the size of the via will also be reduced. When the size of the via is smaller than a certain size (such as below 20 nanometers), there will be challenges in depositing the copper seed layer, because the via aperture is very small, and the deposited copper may form a top protrusion or accumulation, resulting in incomplete filling of the via and forming a void or a crack. Moreover, in a small size via, the growth of the copper seed layer may be limited, resulting in a faster growth rate of copper at the via opening and a slower growth rate at the deep via, eventually forming a copper top protrusion or plugging at the via opening. Incomplete filling of the via or formation of a void will affect the electrical performance of the chip.

[0004] Therefore, in the related art, a copper reflow process is performed after the film deposition process to heat the wafer so that the copper atoms deposited on the wafer surface diffuse and fill in the trench. However, in the above-mentioned copper heating reflow process, it is crucial to ensure that the heating temperature is uniformly distributed on the entire wafer surface to avoid the negative impact of temperature unevenness on the process result. SUMMARY

[0005] The present application aims to at least solve one of the technical problems existing in the prior art, and proposes a process chamber and a control method thereof, and a semiconductor process equipment, which can effectively solve the problem of uneven heating temperature existing in the prior art, so that the copper film deposited on the wafer surface is uniformly heated, the heating efficiency is improved, and the time required for the copper reflow process is shortened, thereby effectively improving the production capacity.

[0006] To achieve the object of the present application, a process chamber is provided for a semiconductor process equipment, the process chamber comprising a cavity, a pin mechanism and a heating member disposed in the cavity, the heating member being configured to heat a wafer when the wafer is supported by the pin mechanism; wherein the heating member is switchable between a first positional relationship and a second positional relationship with the wafer; in the first positional relationship, a temperature rising rate of an edge of the wafer is greater than a temperature rising rate of a center of the wafer; in the second positional relationship, the temperature rising rate of the center of the wafer is greater than the temperature rising rate of the edge of the wafer.

[0007] In some embodiments, the heating member is disposed below the wafer, and the heating member is switchable between a first preset height and a second preset height; in the first positional relationship, the heating member is located at the first preset height; in the second positional relationship, the heating member is located at the second preset height; wherein the first preset height is closer to a back surface of the wafer than the second preset height.

[0008] In some embodiments, a controller is further included, the controller comprising a first driving mode and a second driving mode; in the first driving mode, the heating member is switchable to the first preset height or the second preset height and is maintained at the first preset height or the second preset height for a preset time; in the second driving mode, the heating member is capable of continuous reciprocating motion between the first preset height and the second preset height.

[0009] In some embodiments, the controller is configured to execute the second driving mode after executing the first driving mode.

[0010] In some embodiments, the first driving mode comprises a first driving sub-mode and a second driving sub-mode; in the first driving sub-mode, the heating member is switchable from the second preset height to the first preset height and is maintained at the first preset height for a first preset time; in the second driving sub-mode, the heating member is switchable from the first preset height to the second preset height and is maintained at the second preset height for a second preset time.

[0011] In some embodiments, in the second driving mode, the heating member is capable of uniform motion between the first preset height and the second preset height.

[0012] In some embodiments, a lifting mechanism is further included and disposed in the cavity, the lifting mechanism being connected with the heating member and configured to drive the heating member to descend from the first preset height to the second preset height or to ascend from the second preset height to the first preset height.

[0013] In some embodiments, the heating member comprises a heating lamp tube disposed circumferentially around the wafer.

[0014] In some embodiments, the carrier table further comprises a carrier surface for carrying the heating element, wherein the carrier surface has a roughness greater than or equal to 0.15 microns and less than or equal to 0.25 microns.

[0015] The application further provides a semiconductor process equipment, comprising the process chamber.

[0016] The application further provides a control method for a process chamber for heating a wafer, comprising the following steps: controlling the heating element to be at a first preset height and maintaining the heating element at the first preset height for a first preset time, or controlling the heating element to be at a second preset height and maintaining the heating element at the second preset height for the first preset time; controlling the heating element to descend from the first preset height to the second preset height and maintaining the heating element at the second preset height for a second preset time, or controlling the heating element to ascend from the second preset height to the first preset height and maintaining the heating element at the first preset height for the second preset time; controlling the heating element to make a continuous reciprocating lifting movement between the second preset height and the first preset height until a back surface temperature of the wafer reaches a preset target temperature.

[0017] The application has the following beneficial effects:

[0018] In the embodiments of the present application, the distance between the heating element and the wafer can be variable, and the temperature uniformity of the entire wafer surface after heating can be ensured by adjusting the distance between the heating element and the wafer, thereby improving the temperature uniformity and the temperature rising rate of the wafer surface, and effectively solving the problem of temperature gradient of the wafer surface after heating in the related art.

[0019] Other objects and features of the present application will become apparent from the following detailed description of the application considered in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF DRAWINGS

[0020] The above and / or additional aspects and advantages of the present application will become apparent and be readily understood from the following description, considered in conjunction with the accompanying drawings, in which:

[0021] Figure 1 is a structural schematic diagram of a process chamber of the present application.

[0022] Figure 2 is a structural schematic diagram of a process chamber of the present application.

[0023] Figure 3 is a temperature curve of different test points at different times when a wafer is heated by a fixed lamp tube in the related art; wherein each curve represents the temperature of a different test point in the wafer, and the distance between the curves represents the temperature uniformity.

[0024] Figure 4The temperature corresponding to the test point at different positions on the back surface of the wafer at different times when the heating element of the present application heats the wafer; wherein each curve represents the temperature of different tests in the wafer, and the interval between curves can represent the temperature uniformity.

[0025] Main component symbol explanation:

[0026] 10, process chamber; 20, wafer;

[0027] 100, cavity; 200, base; 300, needle mechanism; 400, lifting mechanism; 410, driving piece; 420, connecting rod; 500, heating element; 600, bearing table; 700, upper cover; 800, magnetron mechanism; 900, cathode target material. DETAILED DESCRIPTION

[0028] The embodiments of the present application will be described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals represent the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the accompanying drawings are exemplary and are only used to explain the present application, and cannot be understood as a limitation of the present application.

[0029] In the related art, in order to raise the temperature of the surface of the wafer 20 to a target temperature so that the copper film can be diffused and filled in the slot hole during the temperature rise of the surface of the wafer 20, a heating lamp is generally fixedly arranged below the wafer 20 to heat the wafer 20 by using the heating lamp. However, the inventors have found that the distance between the heating lamp and the wafer 20 affects the uniformity of the temperature of the surface of the wafer 20 and the rate of temperature rise of the surface of the wafer 20.

[0030] Specifically, when the heating lamp is arranged at a position far from the wafer 20, the wafer 20 needs a longer time to reach the target temperature, and the temperature at the edge of the back surface of the wafer 20 is lower than the temperature at the center of the back surface of the wafer 20, so that the temperature of the back surface of the wafer 20 gradually rises from the edge to the center. When the heating lamp is arranged at a position close to the wafer 20, the temperature at the center of the back surface of the wafer 20 is lower than the temperature at the edge of the back surface of the wafer 20, so that the temperature of the back surface of the wafer 20 gradually decreases from the edge to the center. Therefore, in the related art, the distance between the heating element 500 and the wafer 20 is fixed, and whether the distance is large or small will cause the problem of non-uniform temperature of the surface of the wafer 20, so that the temperature difference between the edge and the center of the surface of the wafer 20 is large. For details, please refer to Figure 3 .

[0031] Therefore, the technical solution of fixing the heating lamp below the wafer 20 to make the temperature of the wafer 20 reach the target temperature in the related art will bring the problem of non-uniform surface temperature of the wafer 20 and temperature gradient, thereby affecting the uniformity of the copper reflow process and the process result.

[0032] To solve the above problems, the embodiment of the present disclosure proposes a process chamber 10 which can be applied to a semiconductor process equipment for performing a corresponding semiconductor process, such as a thin film deposition process, on a wafer 20.

[0033] The process chamber 10 includes a cavity 100, a thimble mechanism 300 and a heating piece 500, both of which are arranged in the cavity 100. The thimble mechanism 300 is used to carry the wafer 20. The heating piece 500 is used to heat the wafer 20 when the wafer 20 is supported by the thimble mechanism 300, which can be specifically referred to Figure 1 and Figure 2 . Wherein the heating piece 500 and the wafer 20 can be switched between a first positional relationship and a second positional relationship, in the case of the first positional relationship, the temperature rising rate of the wafer 20 edge is greater than that of the wafer 20 center; in the case of the second positional relationship, the temperature rising rate of the wafer 20 center is greater than that of the wafer 20 edge.

[0034] It should be noted that the difference between the first positional relationship and the second positional relationship is the difference in the distance between the heating piece 500 and the wafer 20. The distance between the heating piece 500 and the wafer 20 in the first positional relationship is smaller than the distance between the heating piece 500 and the wafer 20 in the second positional relationship, in other words, in the case of the first positional relationship, the heating piece 500 is closer to the wafer 20, and in the case of the second positional relationship, the heating piece 500 is farther away from the wafer 20. For example: the distance between the heating piece 500 and the wafer 20 in the first positional relationship is 200mm, and the distance between the heating piece 500 and the wafer 20 in the second positional relationship is 400mm. Herein, only examples are explained and the distance between the heating piece 500 and the wafer 20 is not limited, which can be specifically set according to the size of the cavity 100. In addition, the relative position between the heating piece 500 and the wafer 20 is not specifically limited, such as the heating piece 500 being above the wafer 20, or the heating piece 500 being below the wafer 20.

[0035] When the distance between the heating element 500 and the wafer 20 is small, the heating element 500 mainly heats the edge of the wafer 20, so that the temperature rising rate of the edge of the wafer 20 is greater than that of the center of the wafer 20; when the distance between the heating element 500 and the wafer 20 is large, the heating element 500 mainly heats the center of the wafer 20, so that the temperature rising rate of the center of the wafer 20 is greater than that of the edge of the wafer 20. In the embodiment, the distance between the heating element 500 and the wafer 20 is variable, so that the distance between the heating element 500 and the wafer 20 can be first increased and then decreased, or first decreased and then increased, or cyclically increased and decreased, to accurately adjust the temperature of the wafer 20 after being heated, thereby avoiding the phenomenon of uneven temperature distribution on the surface of the wafer 20 caused by fixed distance. For details, please refer to Figure 4 .

[0036] Compared with the related art, the distance between the heating element 500 and the wafer 20 is fixed, and whether the distance is large or small will cause the problem of uneven temperature on the surface of the wafer 20. In the embodiment of the present disclosure, the distance between the heating element 500 and the wafer 20 is variable, which can ensure the temperature uniformity of the entire surface of the wafer 20 after heating by adjusting the distance between the heating element 500 and the wafer 20, improve the temperature uniformity and temperature rising rate of the surface of the wafer 20, and effectively solve the problem of temperature gradient on the surface of the wafer 20 after heating in the related art.

[0037] The heating element 500 can be arranged below the wafer 20 to heat the back surface of the wafer 20, or arranged above the wafer 20 to heat the front surface of the wafer 20, and when switching between the first position relationship and the second position relationship, the position of the heating element 500 can change, or the position of the wafer can change.

[0038] Since the movement of the wafer 20 position can cause the wafer 20 position to deviate, in a preferred embodiment, the heating element 500 is arranged below the wafer 20, and the heating element 500 can be switched between a first preset height and a second preset height. In the first position relationship, the heating element 500 is located at the first preset height; in the second position relationship, the heating element 500 is located at the second preset height; wherein the first preset height is closer to the back surface of the wafer 20 than the second preset height.

[0039] In an optional embodiment, the height difference between the first preset height and the second preset height can be between 15mm and 30mm. Preferably, the height difference between the first preset height and the second preset height can be 20mm.

[0040] In an optional embodiment, the process chamber 10 further comprises a lifting mechanism 400 disposed in the cavity 100, the lifting mechanism 400 being connected with the heating member 500 for driving the heating member 500 to descend from the first preset height to the second preset height or to ascend from the second preset height to the first preset height.

[0041] In a specific embodiment, the lifting mechanism 400 comprises a driving member 410 and a connecting rod 420, the driving member 410 can comprise a motor or an electric cylinder, however, the selection of the driving member 410 is not limited to the motor or the electric cylinder, other driving structures can also be adopted, which are not listed one by one here. The flexibility of the movement mode of the driving member 410 is very important, various movement modes for improving the heating efficiency can be adopted to meet different process requirements.

[0042] The number of the connecting rods 420 is not limited to two, and can be three or more, so as to ensure that the heating member 500 is uniformly stressed during movement, thereby ensuring the stable operation of the heating member 500.

[0043] As a preferred embodiment, the number of the lifting mechanisms 400 is multiple, each lifting mechanism comprising a driving member 410 and a connecting rod 420, the multiple lifting mechanisms being used for synchronously driving the heating member 500 to ascend and descend.

[0044] The process chamber 10 further comprises a controller, the controller comprising a first driving mode and a second driving mode; in the first driving mode, the heating member 500 can be switched to the first preset height or the second preset height and maintained at the first preset height or the second preset height for a preset time; in the second driving mode, the heating member 500 can continuously reciprocate between the first preset height and the second preset height. The reciprocating ascent and descent of the heating member 500 can ensure that the copper film on the surface of the wafer 20 is uniformly heated, which helps to improve the heating efficiency, shorten the time required for the reflow process, and thereby effectively improve the production capacity.

[0045] In an optional embodiment, the process chamber 10 further comprises a servo driver, a communication bus and a lower machine software. The servo driver usually has an interface that can communicate with the controller through the communication bus, receive control instructions and send feedback information. The communication bus is an industrial Ethernet protocol used to realize real-time data exchange and control. In the servo control system, the communication bus is responsible for connecting the servo controller, the servo driver, the lower machine software and the controller to realize data communication and control command transmission between them to ensure that the process chamber 10 in the present disclosure can still operate stably in scenarios with high real-time requirements. The lower machine software is used to send motion control instructions to the servo driver and monitor the state of the driver in real time. Specifically, the servo driver is a key component for controlling the top pin mechanism 300, the base 200 and the lifting mechanism 400, which is responsible for receiving instructions from the controller and converting them into specific movements of the top pin mechanism 300, the base 200 and the lifting mechanism 400. The servo driver is usually directly connected to the top pin mechanism 300, the base 200 and the lifting mechanism 400 to control the speed and position parameters thereof. The lower machine software is a software program running on the controller or below the controller, which is responsible for generating control instructions, monitoring system status in real time and processing feedback information.

[0046] In an optional embodiment, the controller is configured to execute the second driving mode after executing the first driving mode. That is, the heating member 500 first heats the wafer 20 at a fixed position (the first preset height or the second preset height) to rapidly raise the temperature of the surface (the center and the edge) of the wafer 20 to near the target temperature to improve the heating efficiency. Then, the temperature of the surface of the wafer 20 is slowly raised through repeated lifting and lowering, and the temperature of the surface of the wafer 20 can be finely adjusted to improve the uniformity of the surface of the wafer 20.

[0047] In an optional embodiment, the first driving mode comprises a first driving sub-mode and a second driving sub-mode. In the first driving sub-mode, the heating member 500 can switch from the second preset height to the first preset height and maintain at the first preset height for a first preset time. In the second driving sub-mode, the heating member 500 can switch from the first preset height to the second preset height and maintain at the second preset height for a second preset time.

[0048] In a specific embodiment, the controller is configured to execute the second driving sub-mode after executing the first driving sub-mode. When the heating member 500 heats the wafer 20 at the first preset height close to the wafer 20, the wafer 20 can be heated at a relatively high temperature even if the heating member 500 does not reach the specified power, so that the surface of the wafer 20 can be rapidly heated, further improving the heating efficiency.

[0049] In an alternative embodiment, the first preset time and the second preset time can be the same or different. In a specific embodiment, the first preset time is between 3s and 7s, and the second preset time is between 3s and 7s. Preferably, the first preset time and the second preset time are both 5s.

[0050] In a preferred embodiment, in the second driving mode, the heating member 500 is capable of moving at a constant speed between the first preset height and the second preset height.

[0051] Specifically, the speed of the constant speed movement is 100-300um / s.

[0052] In an alternative embodiment, the process chamber 10 further comprises a susceptor 200 disposed in the cavity 100. The susceptor 200 is configured to support the wafer 20 for performing a semiconductor process in the cavity 100. The semiconductor process can be a thin film deposition process. The susceptor 200 is also configured to move upward or downward along an axial direction of the wafer 20 in the cavity 100. It is noted that the axial direction of the wafer 20 can be indicated by the arrow x in FIG. 1. Figure 1

[0053] In an alternative embodiment, the controller is configured to control the susceptor 200 to switch between the first process mode and the second process mode.

[0054] In the first process mode, the susceptor 200 is configured to move upward to drive the wafer 20 to move to a process position, and perform a semiconductor process at the process position.

[0055] In the second process mode, the susceptor 200 is configured to move downward to drive the wafer 20 to move to a clearance position, and control the needle mechanism 300 to move upward to drive the wafer 20 to move to a preset position which is higher than the clearance position and lower than the process position.

[0056] ​In an optional embodiment, the process chamber 10 is configured to perform a plating process when the susceptor 200 is in the first process mode, and the process chamber 10 is configured to perform a copper reflow process when the susceptor 200 is in the second process mode. The plating process is configured to form a copper film on the surface of the wafer 20, and the copper reflow process is configured to reflow copper atoms into the trenches by heating after the copper film is formed to ensure the quality and reliability of the copper interconnects. These two process steps are usually closely connected in the semiconductor manufacturing process to complete the preparation of the copper interconnect structure. In an optional embodiment, the process chamber 10 further includes a cover 700, a magnetron mechanism 800, and a cathode target 900. The cathode target 900 is a solid target containing a target metal (such as copper) placed in the plating system. By introducing argon gas into the cavity 100 and ionizing the argon gas into plasma under the action of the glow discharge, the argon ions move under the action of the magnetron mechanism 800 and impact the cathode target 900, and then the metal atoms formed by the impact are deposited on the surface of the wafer 20 inside and outside the trenches to form a copper film on the upper surface of the wafer 20. After the plating process is completed, the wafer 20 is moved to the next process step, i.e., the copper reflow process. The copper reflow process is configured to treat possible voids or unevenness in the copper film to improve the quality and reliability of the copper interconnects. In the copper reflow process, the pin mechanism 300 is raised to lift the wafer 20 to a preset position higher than the avoidance position and lower than the process position, and the pin mechanism 300 always supports the wafer 20 at the preset position during the entire copper reflow process. Then, the back surface of the wafer 20 is heated by the liftable heating element 500 to reflow the metal atoms in the copper film outside the trenches into the trenches to fill the voids and uneven areas.

[0057] Figure 1 The dashed line a indicates that the wafer 20 is at the preset position, the dashed line b indicates that the heating element 500 is at the first preset height, and the dashed line c indicates that the heating element 500 is at the second preset height.

[0058] In an optional embodiment, the pin mechanism 300 is configured to extend out of the susceptor 200 to carry the wafer 20, or is capable of lifting or lowering the wafer 20.

[0059] The controller is configured to control the lifting mechanism 400 to drive the heating element 500 to stop and return to the first preset height or the second preset height when the temperature of the back surface of the wafer 20 rises to a target temperature. Optionally, the target temperature can be in the range of 200°C to 300°C. In a specific embodiment, the process chamber 10 can further include a temperature sensor, and the controller is connected to the temperature sensor. By using the temperature sensor and the controller, the process chamber 10 can monitor and adjust the entire heating process of the copper reflow process in real time to ensure that the heating temperature is within the required range and is uniformly distributed on the entire surface of the wafer 20.

[0060] In a specific embodiment, when the copper reflow process is performed in the process chamber 10, the servo driver drives the motor connected to the pedestal 200 to lower the pedestal 200 along the wafer 20 axis to the avoiding position, while the pin mechanism 300 drives the wafer 20 to the preset position. Under the high-power irradiation of the heating element 500, the wafer 20 is heated. Since the heating element 500 is located at the first preset height close to the wafer 20 at this time, the temperature at the edge of the wafer 20 will be higher than the center temperature. After about 5 seconds of heating time, the wafer 20 edge temperature continues to rise. At this time, the lower computer software sends a position command to the servo driver to control the lifting mechanism 400 to lower the heating element 500 by a second preset height to irradiate the back of the wafer 20, so that the center of the wafer 20 is quickly heated. After about 5 seconds of heating time, the lifting mechanism 400 makes the heating element 500 move up and down at a uniform speed of 100-300 um / s between the first preset height and the second preset height, while keeping the heating power of the heating element 500 unchanged, to ensure that the thin film deposited on the wafer 20 is heated uniformly. When the surface temperature of the wafer 20 rises to 200-300℃, the copper thin film in the trench begins to reflow. Once the copper reflow is completed, the lifting mechanism 400 drives the heating element 500 to move to the second preset height, waiting for the next copper reflow process. Subsequently, the wafer 20 is taken out of the chamber by the robot for the next process.

[0061] In an alternative embodiment, the heating element 500 includes a heating lamp tube arranged circumferentially around the wafer 20. This embodiment uses a movable heating lamp tube, which can flexibly adjust the position and angle to adapt to different heating needs.

[0062] In an alternative embodiment, the process chamber 10 further includes a bearing table 600 having a bearing surface for bearing the heating element 500. The roughness of the bearing surface is greater than or equal to 0.15 microns and less than or equal to 0.25 microns.

[0063] In a preferred embodiment, the bearing surface is arranged as a circular arc surface, which is convex in the direction away from the heating element 500.

[0064] In an alternative embodiment, the roughness of the circular arc surface is greater than or equal to 0.15 microns and less than or equal to 0.25 microns. Specifically, the roughness of the circular arc surface is 0.2 microns, i.e. Ra0.2 microns. The heating element 500 is located on the mirror circular arc surface with a Ra0.2 micron finish, to ensure that most of the heat can be concentrated on the wafer 20, thereby avoiding heat loss. Since the heating element 500 is in a moving state, a circular arc surface with smaller curvature can be used. The specific curvature of the circular arc surface can be determined according to the irradiation range and the principle of light reflection, or light path simulation software can be used to determine it, which will not be described one by one here.

[0065] The application also provides a semiconductor process equipment comprising the process chamber 10 of the above embodiments. The semiconductor process equipment is suitable for the preparation of Cu, Ta, Al and other thin film materials, and has wide applicability and practicality.

[0066] The application also provides a control method for the process chamber 10, which is used for heating the wafer 20. The control method comprises steps S1-S3.

[0067] S1: control the heating member 500 to be at a first preset height and maintain at the first preset height for a first preset time, or control the heating member 500 to be at a second preset height and maintain at the second preset height for the first preset time.

[0068] S2: control the heating member 500 to descend from the first preset height to the second preset height and maintain at the second preset height for a second preset time, or control the heating member 500 to ascend from the second preset height to the first preset height and maintain at the first preset height for the second preset time.

[0069] S3: control the heating member 500 to make continuous reciprocating lifting motion between the second preset height and the first preset height until the back surface temperature of the wafer 20 reaches a preset target temperature.

[0070] By controlling the heating member 500 to maintain at the first preset height and the second preset height for the corresponding preset time respectively, and then controlling the heating member 500 to reciprocate, the temperature uniformity of the entire wafer surface after heating is ensured, the temperature uniformity and the temperature rising rate of the wafer surface are more effectively improved, and the problem of temperature gradient of the wafer surface after heating in the related art is effectively solved.

[0071] In the description of the application, it should be understood that the terms "first", "second" are only for the purpose of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined with "first", "second" can explicitly or implicitly include one or more of the features. In the description of the application, the meaning of "multiple" is two or more, unless otherwise specifically limited.

[0072] In the description of the present application, unless otherwise clearly specified and limited, "on" or "under" of a first feature to a second feature can include that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, "on", "above" and "over" of a first feature to a second feature include that the first feature is directly above and obliquely above the second feature, or simply means that the first feature is horizontally higher than the second feature. "Under", "below" and "underneath" of a first feature to a second feature include that the first feature is directly below and obliquely below the second feature, or simply means that the first feature is horizontally lower than the second feature.

[0073] In the description of the present application, the description referring to the terms "one embodiment", "certain embodiments", "exemplary embodiment", "example", "specific example" or "some examples" etc. means that the specific feature, structure, material or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present application. The exemplary expressions of the above terms in the present specification do not necessarily refer to the same embodiment or example. Moreover, the specific feature, structure, material or characteristic described can be combined in any suitable manner in one or more embodiments or examples.

[0074] It can be understood that the above embodiments are only exemplary embodiments for illustrating the principles of the present application, and the present application is not limited thereto. Various modifications and improvements can be made by those of ordinary skill in the art without departing from the spirit and essence of the present application, and these modifications and improvements are also considered to be within the scope of protection of the present application.

Claims

1. A process chamber for semiconductor process equipment, comprising: The process chamber comprises a cavity, a pushpin mechanism and a heating element disposed in the cavity, the heating element being used for heating a wafer supported by the pushpin mechanism; The heating element and the wafer can be switched between a first positional relationship and a second positional relationship; In the first positional relationship, the temperature rising rate of the wafer edge is greater than that of the wafer center; In the second positional relationship, the temperature rising rate of the wafer center is greater than that of the wafer edge.

2. The process chamber of claim 1, wherein, The heating element is disposed below the wafer, and the heating element can be switched between a first preset height and a second preset height; In the first positional relationship, the heating element is located at the first preset height; In the second positional relationship, the heating element is located at the second preset height; The first preset height is closer to the back surface of the wafer than the second preset height.

3. The process chamber of claim 2, wherein, Further comprising a controller, the controller comprising a first driving mode and a second driving mode; In the first driving mode, the heating element can be switched to the first preset height or the second preset height and maintained at the first preset height or the second preset height for a preset time; In the second driving mode, the heating element can be continuously reciprocated between the first preset height and the second preset height.

4. The process chamber of claim 3, wherein, The controller is used for executing the second driving mode after executing the first driving mode.

5. The process chamber of claim 3, wherein, The first driving mode comprises a first driving sub-mode and a second driving sub-mode; In the first driving sub-mode, the heating element can be switched from the second preset height to the first preset height and maintained at the first preset height for a first preset time; In the second driving sub-mode, the heating element can be switched from the first preset height to the second preset height and maintained at the second preset height for a second preset time.

6. The process chamber of claim 3, wherein, In the second driving mode, the heating element can be uniformly moved between the first preset height and the second preset height.

7. The process chamber of any of claims 2-6, wherein, Further comprising a lifting mechanism disposed in the cavity, the lifting mechanism being connected with the heating element and used for driving the heating element to descend from the first preset height to the second preset height or driving the heating element to ascend from the second preset height to the first preset height.

8. The process chamber of any of claims 1 to 6, wherein, The heating element comprises a heating lamp tube disposed circumferentially around the wafer.

9. The process chamber of any one of claims 1-6, wherein, Further comprising a carrying table having a carrying surface, the carrying surface being used for carrying the heating element; The roughness of the carrying surface is greater than or equal to 0.15 microns and less than or equal to 0.25 microns.

10. A semiconductor process apparatus characterized by comprising: The process chamber comprises a process chamber according to any one of claims 1 to 9.

11. A control method for a process chamber for heating a wafer, characterized by, The process chamber comprises the following steps: Controlling the heating element to be located at the first preset height and maintained at the first preset height for a first preset time, or controlling the heating element to be located at the second preset height and maintained at the second preset height for a first preset time; controlling the heating member to descend from the first preset height to a second preset height and maintain at the second preset height for a second preset time, or controlling the heating member to ascend from the second preset height to the first preset height and maintain at the first preset height for a second preset time; controlling the heating member to make continuous reciprocating lifting and descending movement between the second preset height and the first preset height until the back surface temperature of the wafer reaches a preset target temperature.

Images