Bearing device and semiconductor process equipment

Abstract

The invention provides a bearing device and semiconductor process equipment, and relates to the technical field of semiconductors. The bearing device comprises a base table, an adjusting ring and fingers, wherein a deposition ring is fixedly arranged on the table top of the base table; the top surface of the deposition ring is provided with a first ring surface and a second ring surface, the first ring surface is used for bearing a wafer, and the second ring surface is provided with a limiting structure; the adjusting ring is lapped and limited on the second ring surface through a limiting structure; the multiple fingers are arranged on the peripheral side of the base table in a surrounding mode at intervals. The finger has a support structure for supporting the wafer and the adjustment ring. And the fingers and the base station are configured to be capable of placing the wafer downwards or separating the wafer upwards from the first ring surface and placing the adjusting ring downwards or separating the adjusting ring upwards from the second ring surface in the relative lifting process of the fingers and the base station. In the process of dismounting or replacing the adjusting ring, the adjusting ring is placed downwards or separated upwards from the second ring surface, and the cavity of the semiconductor process equipment does not need to be opened, so that the operation process is simplified, the cost is reduced, and the process processing efficiency is ensured.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor technology, and in particular to a bearing device and a semiconductor process equipment. BACKGROUND

[0002] Power semiconductors are mainly used for power conversion and control circuits of power equipment, and are core components of new energy, consumer electronics and rail transit. The manufacturing process includes forming a unit structure on a substrate, forming a front metal layer, thinning the back of the substrate, forming a collector region on the back, depositing a back metal layer, and forming a front and back target metal. Among them, the thinning improves the heat dissipation efficiency and reduces the packaging volume. The back metalization can reduce the thermal resistance of the device, improve the heat dissipation / cooling efficiency, and improve the product reliability.

[0003] In related technologies, in a semiconductor process equipment for depositing a metal layer on a wafer, a deposition ring is usually arranged around the table surface of a base to support the wafer and a shielding ring, and a gap is provided between the lower surface of the wafer and the table surface of the base to reduce scratches on the back of the wafer or the back metal film caused by the table surface, and a certain gap is maintained between the shielding ring and the edge of the wafer to avoid the shielding ring crushing the edge of the wafer; however, since the deposition ring only supports the edge of the wafer, the edge of the wafer with a small thickness will warp to a certain extent under the action of gravity, resulting in a large gap or no gap between the shielding ring and the edge of the wafer, which will interfere with each other, wherein when the gap is too large, metal particles in the process may be deposited on the inner wall of the chamber through the gap; when there is no gap, the warping height requirement of the wafer edge cannot be met, and the shielding ring may even interfere with the wafer edge and cause the wafer to be scrapped.

[0004] In related technologies, when the warping degree of different batches of wafers changes greatly, the cavity needs to be opened to replace the deposition ring and the base and other hardware to adjust the gap between the shielding ring and the edge of the wafer. This operation is complex, costly and time-consuming. SUMMARY

[0005] The present application aims to provide a bearing device and a semiconductor process equipment to solve the technical problem that in related technologies, the cavity needs to be opened to replace the hardware to adjust the gap between the shielding ring and the warped edge of the wafer, which is complex, costly and time-consuming.

[0006] To solve the above problems, the present application provides a bearing device, which comprises:

[0007] a base, a deposition ring is fixedly arranged on the table surface of the base; the top surface of the deposition ring has a first ring surface and a second ring surface arranged in sequence along the radial direction outward, the first ring surface is used to bear the wafer, and the second ring surface has a limiting structure;

[0008] an adjusting ring, which is overlapped and limited by the limiting structure on the second annular surface; and

[0009] fingers, which are multiple and spaced around the outer periphery of the base platform; the fingers have a supporting structure for supporting the wafer and the adjusting ring;

[0010] The fingers and the base platform are configured to place the wafer downward or separate the wafer upward from the first annular surface and place the adjusting ring downward or separate the adjusting ring upward from the second annular surface during the relative lifting process.

[0011] Optionally, the limiting structure includes a limiting groove, which is recessed on the second annular surface for accommodating the lower region of the adjusting ring.

[0012] Or, the limiting structure includes a limiting protrusion, which protrudes upward on the second annular surface for limiting the inner side wall or the outer side wall of the adjusting ring.

[0013] Optionally, the limiting groove is an annular groove and is adapted to the adjusting ring.

[0014] And / or, the limiting protrusion is an annular protrusion and is adapted to the inner side wall or the outer side wall of the adjusting ring.

[0015] Optionally, the second annular surface is higher than the first annular surface.

[0016] Optionally, the deposition ring has multiple first through-slots for the fingers to pass through.

[0017] Optionally, the outer edge of the platform of the base platform has multiple second through-slots, which are located directly below the first through-slots and for the fingers to pass through.

[0018] Optionally, the fingers have upwardly arranged first and second supporting surfaces.

[0019] The first supporting surface is arranged at the fingertip of the finger and forms an L-shaped opening slot structure with the inner wall surface of the fingertip, which is open inward, and the first supporting surface is used for supporting the wafer.

[0020] The second supporting surface is arranged below the first supporting surface and forms an L-shaped opening slot structure with the outer wall surface of the finger, which is open outward, and the second supporting surface is used for supporting the adjusting ring.

[0021] Optionally, the first supporting surface and the second supporting surface have a preset height difference.

[0022] The preset height difference is configured to maintain a gap between the second supporting surface and the bottom end of the adjusting ring when the first supporting surface of the finger receives the wafer.

[0023] Optionally, the inner wall edge of the fingertip portion has a transition surface arranged obliquely, the transition surface being obliquely upward;

[0024] Optionally, the intersection between the second supporting surface and the outer wall surface of the finger has a guide slope arranged obliquely, the slope surface of the guide slope being obliquely upward.

[0025] The application further provides a semiconductor process equipment, which comprises a chamber, a shielding ring and the above-mentioned bearing device, the shielding ring, the deposition ring, the base and the finger are located in the chamber; the deposition ring is located below the shielding ring, and the inner ring contour of the shielding ring can be vertically projected to the first ring surface of the deposition ring.

[0026] In the bearing device and the semiconductor process equipment provided by the application, the adjusting ring and the limiting structure for limiting the adjusting ring are arranged, so that the corresponding adjusting ring can be selected according to the actual warping condition of the wafer, for example, when the wafer is relatively thin and the warping degree is relatively large, the adjusting ring with a relatively large thickness is selected to increase the height difference between the upper surface of the adjusting ring and the first ring surface of the deposition ring, so as to provide a relatively large warping space for the outer edge of the wafer, so as to avoid that the outer edge of the wafer is pressed by the hardware (such as the shielding ring) above the wafer; in the process of transporting the wafer, the relative lifting movement of the finger and the base is controlled to realize that the wafer is placed downward or separated upward from the first ring surface, and in the process of disassembling or replacing the adjusting ring, the adjusting ring is placed downward or separated upward from the second ring surface, and in this process, the chamber of the semiconductor process equipment does not need to be opened, so that the operation process is simplified, the cost is reduced, and the process treatment efficiency is ensured. At the same time, after a single adjusting ring is placed, it can be continuously used for multiple wafers with similar warping degrees, so that the adjusting ring does not need to be placed multiple times, so that the use frequency of the adjusting ring is improved, the transportation operation of the adjusting ring is reduced, and the process treatment efficiency is further improved. BRIEF DESCRIPTION OF DRAWINGS

[0027] In order to more clearly illustrate the specific embodiments of the application or the technical solutions in the prior art, the following will briefly introduce the drawings needed to be used in the specific embodiments or prior art description. Obviously, the drawings in the following description are some embodiments of the application, and those skilled in the art can also obtain other drawings according to these drawings without creative labor.

[0028] Figure 1 It is a schematic diagram of one of the semiconductor process equipment in the related art;

[0029] Figure 2 Fig. 1 is a schematic view of a semiconductor processing apparatus according to an embodiment of the present application; Figure 1 Fig. 2 is a schematic view of a wafer located in a processing position in a semiconductor processing apparatus according to an embodiment of the present application;

[0030] Figure 3 Fig. 4 is a schematic view of a deposition ring carrying a wafer and upwardly supporting a shadow ring according to an embodiment of the present application; Figure 2 Fig. 5 is a partial enlarged schematic view of a deposition ring carrying a wafer and upwardly supporting a shadow ring according to an embodiment of the present application;

[0031] Figure 4 Fig. 7 is a partial top view schematic view of a deposition ring carrying a wafer downwardly projected according to an embodiment of the present application; Figure 2 Fig. 8 is a schematic view of a wafer edge with a large degree of upward warpage interfering with a shadow ring according to an embodiment of the present application; Fig. 9 is a schematic view of a wafer edge with a large degree of upward warpage interfering with a shadow ring according to an embodiment of the present application;

[0032] Fig. 10 is a schematic view of a semiconductor processing apparatus according to an embodiment of the present application; Figure 5 Fig. 11 is a schematic view of a semiconductor processing apparatus according to an embodiment of the present application; Figure 2 Fig. 12 is a schematic view of a semiconductor processing apparatus according to an embodiment of the present application; Fig. 13 is a schematic view of a semiconductor processing apparatus according to an embodiment of the present application;

[0033] Fig. 14 is a schematic view of a semiconductor processing apparatus according to an embodiment of the present application; Figure 6 Fig. 15 is a schematic view of a semiconductor processing apparatus according to an embodiment of the present application; Fig. 16 is a schematic view of a semiconductor processing apparatus according to an embodiment of the present application;

[0034] Fig. 17 is a schematic view of a semiconductor processing apparatus according to an embodiment of the present application; Figure 7 Fig. 18 is a schematic view of a semiconductor processing apparatus according to an embodiment of the present application; Figure 6 Fig. 19 is a schematic view of a semiconductor processing apparatus according to an embodiment of the present application; Fig. 20 is a schematic view of a semiconductor processing apparatus according to an embodiment of the present application;

[0035] Fig. 21 is a schematic view of a semiconductor processing apparatus according to an embodiment of the present application; Figure 8 Fig. 22 is a schematic view of a semiconductor processing apparatus according to an embodiment of the present application; Fig. 23 is a schematic view of a semiconductor processing apparatus according to an embodiment of the present application;

[0036] Fig. 24 is a schematic view of a semiconductor processing apparatus according to an embodiment of the present application; Figure 9 Fig. 25 is a schematic view of a semiconductor processing apparatus according to an embodiment of the present application; Fig. 26 is a schematic view of a semiconductor processing apparatus according to an embodiment of the present application;

[0037] Fig. 27 is a schematic view of a semiconductor processing apparatus according to an embodiment of the present application; Figure 10a Fig. 28 is a schematic view of a semiconductor processing apparatus according to an embodiment of the present application; Fig. 29 is a schematic view of a semiconductor processing apparatus according to an embodiment of the present application;

[0038] Fig. 30 is a schematic view of a semiconductor processing apparatus according to an embodiment of the present application; Figure 10b Fig. 31 is a schematic view of a semiconductor processing apparatus according to an embodiment of the present application; Fig. 32 is a schematic view of a semiconductor processing apparatus according to an embodiment of the present application;

[0039] Fig. 33 is a schematic view of a semiconductor processing apparatus according to an embodiment of the present application; Figure 11 Fig. 34 is a schematic view of a semiconductor processing apparatus according to an embodiment of the present application; Fig. 35 is a schematic view of a semiconductor processing apparatus according to an embodiment of the present application;

[0040] Fig. 36 is a schematic view of a semiconductor processing apparatus according to an embodiment of the present application; Figure 12 Fig. 37 is a schematic view of a semiconductor processing apparatus according to an embodiment of the present application; Fig. 38 is a schematic view of a semiconductor processing apparatus according to an embodiment of the present application;

[0041] Fig. 39 is a schematic view of a semiconductor processing apparatus according to an embodiment of the present application; Figure 13a Fig. 40 is a schematic view of a semiconductor processing apparatus according to an embodiment of the present application; Figure 10a Fig. 41 is a schematic view of a semiconductor processing apparatus according to an embodiment of the present application; Fig. 42 is a schematic view of a semiconductor processing apparatus according to an embodiment of the present application;

[0042] Fig. 43 is a schematic view of a semiconductor processing apparatus according to an embodiment of the present application; Figure 13bFigure 1 is a schematic view of a finger connected to a base ring in a bearing device provided by an embodiment of the present application, wherein the finger and the base ring correspond to each other. Figure 10b

[0043] Reference signs:

[0044] 10 - chamber; 20 - inner liner; 30 - shielding ring; 31 - shielding edge; 40 - motor; 50 - wafer; 60 - metal particles; 100 - base; 110 - mesa; 200 - finger; 210 - first support part; 211 - first support surface; 220 - limiting part; 222 - inner limiting surface; 222a - conical surface segment; 222b - vertical cylindrical surface segment; 223 - outer limiting surface; 230 - second support part; 231 - second support surface; 240 - guide slope; 250 - mounting part; 300 - deposition ring; 310 - first annular surface; 311 - annular isolation groove; 320 - second annular surface; 321 - limiting groove; 400 - adjustment ring; 500 - avoiding passage; 600 - base ring; 700 - driving assembly. DETAILED DESCRIPTION

[0045] The technical solutions of the present application will be described clearly and completely below with reference to the drawings. Obviously, the described embodiments are only some of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application.

[0046] In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" and the like indicate the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first", "second", "third" are only for descriptive purposes and cannot be understood as indicating or implying relative importance.

[0047] In the description of the present application, it should be noted that unless otherwise explicitly specified and limited, the terms "mounting", "connecting", "connecting" should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the communication inside two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0048] ​In the related art of semiconductor process equipment, when transferring the wafer 50, it is usually allowed to only touch the outer edge of the wafer 50. For example, during the transfer of the wafer 50 with the front side plated with metal, Figures 1-5 As shown, the outer edge of the wafer 50 is supported on the first ring surface 310 of the deposition ring 300 or the four fingers 200 (specifically, the fingertip support surface of the fingers), wherein, as shown in FIG. Figure 4 As shown, the outer peripheral wall of the upper end of the base 100 and the inner peripheral wall of the deposition ring 300 both have an avoidance channel 500 for the finger 200 to pass through. The size of the avoidance channel 500 is larger than that of the finger 200 to ensure smooth lifting and lowering of the finger.

[0049] When the wafer 50 needs to be placed on the process position above the base 100, such as Figure 1 As shown, the table 110 of the base 100 is lower than the finger 200, and the wafer 50 is transferred to the finger 200 by a robot (not shown in the figure), and then, as shown in FIG. Figure 2 、 Figure 3 As shown, the base 100 rises relative to the finger 200 until its table 110 is higher than the finger 200. At this time, the second ring surface 320 of the deposition ring 300 pushes up the shielding ring 30, and the first ring surface 310 pushes up the wafer 50, that is, the outer edge of the wafer 50 is supported on the first ring surface 310, so that there is a gap between the back side of the wafer 50 and the table 110 of the base 100, thereby reducing or even avoiding scratches on the back side of the wafer 50 by the table 110 of the base 100; at the same time, the shielding edge 31 of the shielding ring 30 can shield the outer edge of the wafer 50 downward, and there is a gap between the shielding edge 31 and the outer edge of the wafer 50, thereby avoiding the shielding edge 31 from crushing the outer edge of the wafer 50. The gap cannot be too large to reduce or even avoid the metal particles 60 from being deposited on the inner wall of the chamber 10 and the outer wall of the base 100 through the gap and the avoidance channel 500 connected to the gap. After the process is completed, the base 100 moves downward to the initial position relative to the finger 200, and the wafer 50 falls on the finger 200, that is, the outer edge of the wafer 50 is supported by the finger 200. Then, the wafer 50 is lifted up and separated from the finger 200 and transferred out of the chamber 10 by the robot.

[0050] In related technologies, such as Figure 5As shown, for the wafer 50 with a relatively thin thickness, the wafer 50 has a relatively large degree of warping, so that the gap between the shielding ring 30 and the outer edge of the wafer 50 disappears, that is, the outer edge of the wafer 50 is warped upward to the shielding edge 31, at this time, the shielding ring 30 will press down the outer edge of the wafer 50, so that the wafer 50 is easily crushed and scrapped. To avoid this situation, the cavity needs to be opened to replace the related hardware, for example, the deposition ring 300 is replaced by a deposition ring 300 with a larger height difference between the first annular surface 310 and the second annular surface 320, so as to increase the support height of the second annular surface 320 to the shielding ring 30, and correspondingly increase the gap height between the shielding edge 31 and the outer edge of the wafer 50, so as to avoid the outer edge of the wafer 50 being warped upward to the shielding edge 31. However, the operation process of opening the cavity to replace the corresponding hardware is relatively complex and will increase the cost, and the subsequent process needs to re-evacuate the chamber 10, fill the inert gas, and the recovery time is relatively long, which seriously affects the process efficiency.

[0051] In summary, in the related art, when the warping degree of the edge of the wafer 50 changes to cause the gap between the shielding ring 30 and the outer edge of the wafer 50 to be too large or no gap, the cavity of the semiconductor process equipment needs to be opened to replace the corresponding hardware, which is complex, high in cost, long in recovery time of the process environment in the chamber, and low in process efficiency.

[0052] The bearing device provided by the present application can adjust the support height of the deposition ring 300 to the shielding ring 30 without opening the cavity when applied to the semiconductor process equipment, which is convenient to operate, low in cost and high in process efficiency. For the convenience of understanding, the technical solutions disclosed in various embodiments of the present application will be described in detail below with reference to the drawings.

[0053] The bearing device provided by the present application can adjust the support height of the deposition ring 300 to the shielding ring 30 without opening the cavity when applied to the semiconductor process equipment, which is convenient to operate, low in cost and high in process efficiency. For the convenience of understanding, the technical solutions disclosed in various embodiments of the present application will be described in detail below with reference to the drawings. Figures 6-1 3, the bearing device comprises a base 100, an adjusting ring 400 and a finger 200, wherein the top surface of the deposition ring 300 has a first annular surface 310 and a second annular surface 320 arranged in turn along the radial direction outward, the first annular surface 310 is used for bearing the wafer 50, and the second annular surface 320 has a limiting structure; the adjusting ring 400 is lapped and limited to the second annular surface 320 through the limiting structure; the finger 200 is spaced and arranged on the outer circumferential side of the base 100; the finger 200 has a support structure for supporting the wafer and the adjusting ring 400. The finger 200 and the base 100 are configured to: during the relative lifting process of the two, the wafer 50 can be placed downward or separated upward from the first annular surface 310, and the adjusting ring 400 can be placed downward or separated upward from the second annular surface 320.

[0054] The embodiment of the present application also provides a semiconductor process equipment, which comprises the chamber 10, the shielding ring 30 and the bearing device, the shielding ring 30, the deposition ring 300, the base 100 and the finger 200 are located in the chamber 10; the deposition ring 300 is located below the shielding ring 30, and the inner ring profile of the shielding ring 30 can be vertically projected to the first ring surface 310 of the deposition ring 300.

[0055] In the bearing device provided by the embodiment of the present application, the adjusting ring 400 and the limiting structure for limiting the adjusting ring 400 are arranged, so that the adjusting ring 400 can be selected according to the actual warping condition of the wafer 50, for example, when the wafer 50 is relatively thin and the warping degree is relatively large, the adjusting ring 400 with a relatively large thickness is selected to increase the height difference between the upper surface of the adjusting ring 400 and the first ring surface 310 of the deposition ring 300, so as to provide a relatively large warping space for the outer edge of the wafer 50, thereby avoiding that the outer edge of the wafer 50 is pressed by the hardware (such as the shielding ring 30) above the wafer 50; in the process of conveying the wafer 50, the wafer 50 is placed downward or separated upward from the first ring surface 310 by controlling the relative lifting movement of the finger 200 and the base 100, and in the process of disassembling or replacing the adjusting ring 400, the adjusting ring 400 is placed downward or separated upward from the second ring surface 320, and in this process, the chamber 10 of the semiconductor process equipment does not need to be opened, so that the operation process is simplified, the cost is reduced, and the process efficiency is ensured. Meanwhile, the single adjusting ring can be continuously used for multiple wafers with similar warping degrees after being placed, so that the adjusting ring does not need to be placed multiple times, thereby improving the use frequency of the adjusting ring, reducing the conveying operation of the adjusting ring, and further improving the process efficiency.

[0056] In the embodiment of the present application, before the process, the thickness of the wafer can be matched with the thickness of the adjusting ring 400, that is, wafers 50 with different thicknesses are matched with adjusting rings 400 with different thicknesses, and in the process of conveying wafers 50 with corresponding thicknesses, the adjusting ring 400 with a corresponding thickness can be conveyed to a preset position in the chamber 10 by the mechanical hand, for example, conveyed above the deposition ring 300, and then the adjusting ring 400 is placed on the second ring surface 320 of the deposition ring 300 by controlling the relative lifting movement of the finger 200 and the base 100, and the relative position between the adjusting ring 400 and the deposition ring 300 is limited by the limiting structure, and then the wafer 50 with a corresponding thickness can be conveyed to a preset position in the chamber 10 by the mechanical hand, for example, conveyed directly above the base 100, and then the wafer 50 is placed on the first ring surface 310 of the deposition ring 300 by controlling the relative lifting movement of the finger 200 and the base 100, so that the adjusting ring 400 can be replaced and the wafer 50 with a corresponding thickness can be conveyed only by the relative lifting movement of the finger 200 and the base 100 without opening the chamber.

[0057] In the embodiment of the present application, as shown in FIG. 6, the adjusting ring 400 is placed on the second ring surface 320 of the deposition ring 300, and the wafer 50 is placed on the first ring surface 310 of the deposition ring 300. Figure 11As shown, the limiting structure includes a limiting groove 321 recessed in the second annular surface 320 for accommodating a lower region of the adjusting ring 400; in this way, the adjusting ring 400 can be embedded into the limiting groove 321, thereby limiting the adjusting ring 400. Specifically, the limiting groove 321 can be set as an annular groove and be adapted to the adjusting ring 400.

[0058] In the embodiment of the present application, the limiting structure can be set as other structures besides the limiting groove 321, for example, the limiting structure can be set as: the limiting structure includes a limiting protrusion (not shown in the figure) protruding upward from the second annular surface 320 for limiting the inner side wall of the adjusting ring 400 or the outer side wall of the adjusting ring 400 in the radial direction; in this way, the adjusting ring 400 can be set on the outer side wall of the limiting protrusion or the inner side wall of the limiting protrusion. Specifically, the limiting protrusion can be set as an annular protrusion and be adapted to the inner side wall or the outer side wall of the adjusting ring 400.

[0059] In the embodiment of the present application, the second annular surface 320 is higher than the first annular surface 310; in this way, on the one hand, the inner side wall of the second annular surface 320 can limit the outer edge of the wafer 50 when the first annular surface 310 bears the wafer 50, on the other hand, since there is a height difference between the second annular surface 320 and the first annular surface 310, for the wafer with a small warping degree, when the height difference is greater than the warping height of the outer edge of the wafer 50, the adjusting ring 400 can not be installed, at this time, the second annular surface 320 directly bears the function of the upper end surface of the adjusting ring 400, that is, the second annular surface 320 directly bears the shielding ring 30.

[0060] In the embodiment of the present application, as shown in Figures 7-9 As shown, the deposition ring 300 has a plurality of first through grooves for the fingers 200 to pass through; in this way, the fingers 200 can be smoothly lifted and lowered relative to the base 100.

[0061] In the embodiment of the present application, the outer edge of the table of the base 100 has a plurality of second through grooves located directly below the first through grooves and for the fingers 200 to pass through; in this way, the fingers 200 can be smoothly lifted and lowered relative to the base 100.

[0062] In the embodiment of the present application, as shown in Figures 7-1As shown in FIG. 1, the finger 200 has a first support surface 211 and a second support surface 231 arranged upwardly; the first support surface 211 is arranged at the fingertip of the finger 200 and forms an L-shaped opening groove structure with the inner wall surface of the fingertip, and is used for supporting the wafer 50; the second support surface 231 is arranged below the first support surface 211 and forms an L-shaped opening groove structure with the outer wall surface of the finger 200, and is used for supporting the adjusting ring 400. In this way, when the wafer 50 needs to be transported, the wafer 50 can be supported on or separated from the first support surface 211 of the finger 200 by controlling the lifting of the finger 200 relative to the base 100; when the adjusting ring 400 needs to be disassembled or replaced, the adjusting ring 400 can be supported on or separated from the second support surface 231 by controlling the lifting of the finger 200 relative to the base 100.

[0063] In the embodiment of the present application, as shown in FIG. 1, Figures 7-1 As shown in FIG. 1, the first support surface 211 and the second support surface 231 have a preset height difference, and the first support surface 211 is higher than the second support surface 231 by a preset height; the preset height difference is configured to maintain a gap between the second support surface 231 and the bottom end of the adjusting ring 400 when the first support surface 211 of the finger 200 supports the wafer 50. In this way, during the transportation of the wafer 50, the height position of the adjusting ring 400 is not affected, and thus the working state of the adjusting ring 400 is not affected.

[0064] In the embodiment of the present application, as shown in FIG. 1, Figures 7-1 As shown in FIG. 1, the inner wall edge of the fingertip of the finger 200 has a transition surface arranged obliquely, and the transition surface is directed obliquely upwardly; in this way, during the transportation of the wafer 50, the outer edge of the wafer 50 can be guided until the wafer 50 is stably supported on the first support surface 211 during the process of placing the wafer 50 on the first support surface 211; the junction between the second support surface 231 and the outer wall surface of the finger 200 has a guide slope 240 arranged obliquely, and the slope surface of the guide slope 240 is directed obliquely upwardly; in this way, during the process of replacing the adjusting ring 400, the inner edge of the adjusting ring 400 can be guided until the adjusting ring 400 is stably supported on the second support surface 231 during the process of placing the adjusting ring on the second support surface 231.

[0065] Specifically, when the warping degree of the outer edge of the wafer 50 increases, the distance between the warping height of the outer edge of the wafer 50 and the shielding edge 31 is small, or even interference may occur between them, then the adjusting ring 400 needs to be placed in the bearing device; the selection of the adjusting ring 400 can be combined with the warping degree of the wafer 50 and the height difference between the second ring surface 320 and the first ring surface 310 to select the adjusting ring 400 with appropriate thickness, such as Figure 12As shown, the adjusting ring 400 is a ring with uniform thickness; when the adjusting ring 400 is placed, the mechanical hand can send the adjusting ring 400 above the base 100 and the fingers 200, and through the lifting cooperation of the mechanical hand, the base 100 and the fingers 200, the adjusting ring 400 is placed on the second annular surface 320, and then the mechanical hand exits the chamber 10, completing the placement of the adjusting ring 400. Subsequently, the mechanical hand sends the wafer 50 above the base 100 and the fingers 200, the outer diameter of the wafer 50 is greater than the inner diameter of the first annular surface 310 and less than the outer diameter of the first annular surface 310, and at the same time, the outer diameter of the wafer 50 is greater than the inner diameter of the annular profile formed by the plurality of first support surfaces 211 and less than the outer diameter of the annular profile, and through the relative lifting cooperation between the mechanical hand, the base 100 and the fingers 200, the wafer 50 is transmitted to the first annular surface 310, and then the mechanical hand exits the chamber 10, completing the placement of the wafer 50. Subsequently, the adjusting ring 400 and the wafer 50 rise with the base 100 to the process position, at this time, the adjusting ring 400 upwardly lifts the shielding ring 30, the adjusting ring 400 can increase the gap spacing between the shielding edge 31 and the outer edge of the wafer 50, so as to meet the required gap spacing requirement of the warping of the outer edge of the wafer 50, so that the outer edge of the wafer 50 does not abut against the shielding edge 31 of the shielding ring 30, thereby meeting the process environment requirement of the chamber 10 for processing the top surface of the wafer 50.

[0066] In the embodiment of the present application, after the process is completed, the mechanical hand enters the chamber 10, the fingers 200 are lifted relative to the base 100, the first support surface 211 lifts the wafer 50 after the process is completed, the mechanical hand extends into the gap space between the wafer 50 and the adjusting ring 400, and then the wafer 50 is transmitted to the mechanical hand and sent out of the chamber 10 by the mechanical hand through the lifting of the mechanical hand or the lowering of the fingers 200; wherein the height difference between the first support surface 211 and the second support surface 231 is set to ensure that the adjusting ring 400 is not sent out synchronously with the wafer 50 after the process is completed, but still remains on the second annular surface 320, thereby realizing the cooperation of the subsequent multiple wafers 50, reducing the increase of process steps and the low efficiency of process treatment caused by the circulation of the adjusting ring 400 and the wafer 50, and correspondingly improving the use frequency of the adjusting ring 400, reducing the process steps and improving the process efficiency.

[0067] Similarly, when the warping degree of the outer edge of the next batch of wafers 50 decreases and causes the gap between the shielding edge 31 and the edge of the wafer 50 to be too large during the process, before the next batch of wafers 50 is sent in, the mechanical hand can enter the chamber 10 and take down the adjusting ring 400 on the second annular surface 320 and send it out through the lifting cooperation between the base 100 and the fingers 200, and then according to the actual needs, a smaller thickness adjusting ring 400 can be placed on the second annular surface 320 again, and the process of the next batch of wafers 50 can be continued.

[0068] In the embodiment of the present application, for wafers 50 with different warping degrees, the adjustment ring 400 with different thickness can be placed in the second ring surface 320 of the deposition ring 300, so that the adjustment of the support height of the deposition ring 300 to the shielding ring 30 can be realized without opening the cavity, which is convenient to operate, low in cost and high in process processing efficiency; at the same time, the single adjustment ring 400 can be continuously used for multiple wafers 50 with similar warping degrees after being placed, without the need for multiple placements of the adjustment ring 400, so as to improve the use frequency of the adjustment ring 400, reduce the transportation operation of the adjustment ring 400, and further improve the process processing efficiency. Specifically, for example, when the increase of the warping height of the outer edge of the wafer 50 is 0.1mm-0.5mm, the thickness of the adjustment ring 400 can be increased by 0.5mm; when the decrease of the warping height of the outer edge of the wafer 50 is less than 0.5mm, the thickness of the adjustment ring 400 remains unchanged; when the decrease of the warping height of the outer edge of the wafer 50 reaches 0.5mm, the thickness of the adjustment ring 400 can be reduced by 0.5mm.

[0069] In the embodiment of the present application, the placement of the adjustment ring 400 can be realized through the relative lifting cooperation among the mechanical hand, the base 100 and the finger 200. Taking the case that the height position of the adjustment ring 400 sent into the chamber 10 by the mechanical hand is certain and the base 100 is stationary as an example, the specific operation steps can be: the adjustment ring 400 is sent into the chamber 10 by the mechanical hand to a preset height position and is located above the base 100 and the finger 200, the finger 200 is lifted to the first wafer transferring position through the avoiding passage 500, and the adjustment ring 400 on the mechanical hand is carried on the second support surface 231; then, the mechanical hand is withdrawn, the finger 200 is lowered, and the adjustment ring 400 is carried on the second ring surface 320, so that the placement of the adjustment ring 400 is completed.

[0070] In the embodiment of the present application, the placement of the wafer 50 can be realized through the lifting cooperation among the mechanical hand, the base 100 and the finger 200. Taking the case that the height position of the adjustment ring 400 sent into the chamber 10 by the mechanical hand is certain and the base 100 is stationary as an example, the specific operation steps can be: the wafer 50 is sent into the chamber 10 by the mechanical hand to a preset height position and is located above the base 100 and the finger 200, the finger 200 is lifted to the second wafer transferring position through the avoiding passage 500, and the wafer 50 on the mechanical hand is transferred to the first support surface 211, then, the mechanical hand is withdrawn, the finger 200 is lowered, and the wafer 50 is carried on the first ring surface 310, so that the placement of the wafer 50 is completed.

[0071] Specifically, as shown in FIG. 6, the finger 200 is provided with a first support surface 211 and a second support surface 231, and the first support surface 211 and the second support surface 231 are arranged in parallel and are separated by a certain distance. Figure 9As shown, when the robot transfers the wafer 50 to the first supporting surface 211 of the finger 200, the second supporting surface 231 is lower than the bottom surface of the adjusting ring 400, and the first supporting surface 211 is higher than the top surface of the adjusting ring 400. In this way, during the placing and sending of the wafer 50, the second supporting surface 231 does not push the adjusting ring 400 upward, so that the adjusting ring 400 is kept in the second ring surface 320, and the gap between the first supporting surface 211 and the adjusting ring 400 can be used for the robot to place and take the wafer 50 on the first supporting surface 211. In this way, during the placing and taking of the wafer 50, the robot and the finger 200 do not interfere with the adjusting ring 400 when they are relatively lifted, so that the finger 200 and the robot do not cause invalid transmission to the adjusting ring 400 during the process of placing or sending the wafer 50, thereby reducing the invalid load caused by the synchronous lifting of the adjusting ring 400 by the finger 200 and the robot during the transmission of the wafer 50.

[0072] In the embodiment of the present application, the adjusting ring 400 and the wafer 50 can be selected to have different process formulations, wherein the process formulation of the adjusting ring 400 is bound to the first wafer transferring position, and the process formulation of the wafer 50 is bound to the second wafer transferring position. The adjusting ring 400 and the wafer 50 are identified by the process formulation, and accordingly, the finger 200 is automatically controlled to rise to the wafer transferring position corresponding to the process formulation, for example, when the identified process formulation is the adjusting ring 400, the finger 200 rises to the first wafer transferring position, and other process steps corresponding thereto are performed, so as to realize automatic replacement of the adjusting ring 400; when the identified process formulation is the wafer 50, the finger rises to the second wafer transferring position, and other process steps corresponding thereto are performed, so as to realize automatic transmission of the wafer 50.

[0073] Specifically, in the embodiment of the present application, the wafer 50 is selected to be a silicon wafer, and the adjusting ring 400 can be a metal ring or a ceramic ring. In use, the adjusting ring 400 and the wafer 50 can be stored in different wafer boxes, and after the adjusting ring 400 is placed in each chamber 10, the wafer 50 is transmitted; or the adjusting ring 400 and the wafer 50 can be stored in the same wafer box, and the robot identifies the adjusting ring 400 and the wafer 50 by the process formulation, and transmits them to the corresponding position, for example, when the wafer 50 and the adjusting ring 400 are stored in the same wafer box, during the transmission of the wafer 50 or the adjusting ring 400, the robot transmits them into the chamber 10 together, and controls the finger 200 to lift twice to take and place the adjusting ring 400 and the wafer 50 respectively.

[0074] In the embodiment of the present application, the placement of the adjusting ring 400 is achieved by the relative lifting cooperation among the mechanical hand, the base 100 and the fingers 200. In addition to the lifting cooperation mode described above, other lifting cooperation modes can also be used, for example: the mechanical hand sends the adjusting ring 400 into the first preset position in the chamber 10, the fingers 200 are not moved, the base 100 is lowered until the adjusting ring 400 on the mechanical hand is carried on the second support surface 231; then, the mechanical hand is withdrawn, the base 100 is raised until the adjusting ring 400 is carried on the second ring surface 320, and the placement of the adjusting ring 400 is completed. Of course, in addition to the above two modes, the placement of the adjusting ring 400 can also be completed by other specific operation steps, and is not limited to the above operation sequence.

[0075] In the embodiment of the present application, the placement of the wafer 50 is achieved by the lifting cooperation among the mechanical hand, the base 100 and the fingers 200. In addition to the lifting cooperation mode described above, other lifting cooperation modes can also be used, for example: the mechanical hand sends the wafer 50 into the second preset position in the chamber 10, the fingers 200 are not moved, the base 100 is lowered until the wafer 50 is carried on the first support surface 211, then the mechanical hand is withdrawn, the base 100 is raised until the wafer 50 is carried on the first ring surface 310, and the placement of the wafer 50 is completed. Of course, in addition to the above two modes, the placement of the wafer 50 can also be completed by other specific operation steps, and is not limited to the above operation sequence. It should be noted that the first preset position and the second preset position are determined according to specific scenarios.

[0076] In the embodiment of the present application, as shown in Figures 7-10b The fingers 200 include a first support part 210, a limiting part 220 and a second support part 230, which are sequentially fixed in the outward radial direction. The limiting part 220 is vertically extended, the first support part 210 is close to the upper end of the limiting part 220, the top surface of the first support part 210 serves as the first support surface 211, the second support part 230 is located at the oblique lower position of the first support part 210, the top surface of the second support part 230 serves as the second support surface 231, the upper end of the limiting part 220 is higher than the first support part 210, and the side wall surface of the limiting part 220 towards the first support part 210 is the inner limiting surface 222, which is a coaxial circular surface of the base 100. The inner limiting surfaces 222 of the plurality of fingers 200 can surround a circular side enclosure coaxial with the base 100, and the radial dimension of the circular side enclosure is adapted to the radial dimension of the wafer 50. When the wafer 50 is carried on the first support surface 211 to form a ring profile, the plurality of inner limiting surfaces 222 can radially limit the wafer 50 at different positions in the circumferential direction, thereby improving the position accuracy and stability of the wafer 50 carried on the first ring surface 310, and accordingly improving the process processing accuracy of the semiconductor process equipment on the wafer 50.

[0077] In the embodiment of the present invention, Figures 9-10b As shown, the inner limiting surface 222 includes a tapered conical surface section 222a and a vertical cylindrical surface section 222b from top to bottom, wherein the tapered conical surface section 222a serves as an inclined transition surface. The tapered conical sections of the multiple fingers 200 form a tapered groove section that is tapered from top to bottom, and the vertical cylindrical sections 222b of the multiple fingers 200 form a straight groove section that is straight groove-shaped from top to bottom. In the process of the fingers 200 rising relative to the robot to transfer the wafer 50, when there is an offset between the position of the wafer 50 and the coaxiality of the base 100, the wafer 50 first enters the flared end at the top of the shrinking groove section, and then realizes centering adjustment under the guidance of the shrinking groove section until it enters the straight groove section and is carried on the first supporting surface 211, thereby realizing centering adjustment of the wafer 50. On the basis of ensuring the accuracy of the wafer 50 placed in the first annular surface 310 and the coaxiality of the wafer 50 and the base 100, the position accuracy requirement for the robot to transfer the wafer 50 is reduced.

[0078] In the embodiment of the present invention, Figures 9-10b As shown, the side wall surface of the limiting portion 220 facing the second supporting portion 230 is the outer limiting surface 223. The outer limiting surface 223 is a circular arc surface coaxial with the base 100, and a transition inclined surface is provided at the corner between the outer limiting surface 223 and the second supporting surface 231. The transition inclined surface is the above-mentioned guide slope 240. The outer limiting surfaces 223 of multiple fingers 200 can form a circular side enclosure coaxial with the base 100, and the radial dimension of the circular side enclosure is smaller than the inner diameter of the adjustment ring 400; the multiple guide slopes 240 can form a guide ring conical surface coaxial with the base 100, and the outer wall of the guide ring conical surface is an outward-expanding conical surface, and the outer diameter of the bottom end of the guide ring conical surface is adapted to the inner diameter of the adjustment ring 400. In the process of the finger 200 rising relative to the manipulator to transfer the adjustment ring 400, when the position of the adjustment ring 400 is offset from the coaxiality of the base 100, the adjustment ring 400 is first sleeved on the outer side. The circular side block formed by the limiting surface 223 then descends to the guide ring formed by the guide slope 240. The guide slope 240 then guides the finger 200 down to the bottom of the slope, where it becomes coaxial with the bottom end of the guide ring, thereby achieving centering adjustment of the adjustment ring 400. The finger 200 then descends relative to the base 100, transferring the adjustment ring 400 to the second annular surface 320. While ensuring the accuracy of the adjustment ring 400's placement into the second annular surface 320 and the coaxiality of the adjustment ring 400, the base 100, and the shielding ring 30, the positional accuracy requirements for the manipulator's transfer of the adjustment ring 400 are reduced. Specifically, the slope (conical surface) of the guide slope 240 can be a conical arc surface, a convex arc surface, or a concave arc surface.

[0079] Specifically, such as Figures 10a-10bAs shown, the second limiting portion 230 protrudes radially outward from the outer side wall of the limiting portion 220 to form a side boss, and the top surface of the side boss serves as a second supporting surface 231. In this way, on the basis of achieving effective bearing of the adjustment ring 400 by the top surface of the side boss as the second supporting surface 231, the side boss protrudes locally relative to the mounting portion 250. During the lifting of the fingers 200, the empty area below the side boss does not interfere with other components, thereby reducing the space occupied by the fingers 200 and improving the utilization rate of the space in the chamber 10. In addition, the side boss can be added to the outer side wall of the related art finger 200 to obtain the finger 200 of the present application, thereby achieving secondary utilization of the improved finger 200 and reducing the processing difficulty and cost of the finger 200.

[0080] In the embodiment of the present application, as shown in Figures 6-9 , the base ring 600 is annular and is sleeved on the outer periphery of the base 100, and the bottom of the finger 200 is fixed to the base ring 600. Specifically, as shown in FIG. 13, a plurality of fingers 200 are fixed to the base ring 600 and are arranged at intervals along the circumference of the base ring 600. During use, the base ring 600 is controlled to lift to synchronously drive the plurality of fingers 200 to lift synchronously, thereby improving the synchronization of the lifting of the plurality of fingers 200 relative to the base 100, and correspondingly simplifying the structure of the carrying device and the semiconductor process equipment, while improving the operation accuracy of the carrying device and the semiconductor process equipment. Specifically, the finger 200 can be four, and the four fingers 200 are uniformly and intervaliy arranged along the circumference of the base ring 600 to stably carry the adjustment ring 400 and the wafer 50 at different positions along the circumference during transmission.

[0081] In the embodiment of the present application, the connection structure of the finger 200 and the base ring 600 can adopt various connection modes. For example, as shown in Figures 6-9 , the bottom of the finger 200 is in an integral structure with the base ring 600; or the two are connected by welding; or, as shown in Figures 10a-10b , the bottom of the finger 200 can be provided with a mounting portion 250. Specifically, as shown in Figure 10a , the mounting portion 250 protrudes radially inward from the inner side wall of the limiting portion 220; or, as shown in Figure 10b , the mounting portion 250 protrudes radially outward from the outer side wall of the limiting portion 220; the mounting portion 250 has a mounting hole, and Figures 13a-13b , the finger 200 can be fixedly mounted to the base ring 600 through the mounting hole.

[0082] In the embodiment of the present application, as shown in Figure 11As shown, the outer edge of the first annular surface 310 is surrounded by an annular isolation groove 311. The first annular surface 310 is used to support the wafer 50, which has high surface accuracy requirements. The first annular surface 310 can be subjected to sand blasting, film coating and other operations during the processing process. The annular isolation groove 311 is arranged at the connection between the first annular surface 310 and the second annular surface 320 to isolate the two, so as to reduce the adverse effects of sand blasting and other operations on the second annular surface 320.

[0083] In the embodiment of the present application, the bearing device further comprises a driving assembly 700. Specifically, the driving assembly 700 can be a single one, and the driving end of the driving assembly 700 is connected to the base 100 or the finger 200, and is used to drive one of the base 100 and the finger 200 to lift; or, as shown in the figure, Figure 6 and Figure 7 Specifically, the driving assembly 700 can be selected from a push rod motor 40, a linear motor 40 and the like.

[0084] In summary, in the bearing device and the semiconductor process equipment provided by the embodiment of the present application, the gap spacing between the shielding edge 310 of the shielding ring 300 and the first annular surface 310 of the deposition ring 300 is changed by replacing the adjusting ring 400 with different thicknesses, so that the gap spacing meets the warping height of the outer edge of the wafer 50; different materials are transmitted by the first support surface 211 and the second support surface 231 of different heights on the finger 200, i.e. the adjusting ring 400 and the wafer 50 are transmitted respectively; the finger 200 is lifted relative to the base 100 and the robot, and the material transmission between the robot and the corresponding material, i.e. the adjusting ring 400 and the wafer 50, is performed, and all the adjusting rings 400 are defined as one process formula, and the wafer 50 is defined as one process formula, so that the transmission of two different materials is identified by different process formulas, and the compatibility of wafers 50 with different deformation sizes (warping degrees) is realized.

[0085] In the process, when conveying wafers 50 with different warping degrees, the adjusting ring 400 with the corresponding thickness can be replaced by the robot, so that the gap between the shielding edge 310 of the shielding ring 300 and the first annular surface 310 of the deposition ring 300 meets the warping height of the outer edge of the wafer 50, which not only avoids the deposition of metal particles on the inner wall of the chamber 10, the finger 200, the base 100 and other parts, but also avoids the crushing of the wafer 50. In the process of replacing the adjusting ring 400, it is not necessary to open the chamber to replace the deposition ring 300 and other related hardware. The replacement step is equivalent to the step of picking and placing the wafer 50, which greatly simplifies the operation process, saves the replacement time of opening the chamber to replace the corresponding hardware, reduces the replacement cost of opening the chamber to replace the corresponding hardware, and ensures the process efficiency.

[0086] In addition, the same wafer 50 usually undergoes processes in different chambers 10, and in the related art, the hardware such as the deposition ring 300 involved needs to be cleaned and surface treated, and the chamber process environment also needs to be restored, which requires a large amount of time, and all of these are calculated in the cost of each wafer 50; while for the carrier device and semiconductor process equipment provided by the embodiments of the present application, only the adjustment ring 400 needs to be replaced on the basis of not opening the chamber, which further saves the restoration time of the chamber process environment after the chamber is opened, and reduces the process cost.

[0087] Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present application, but not to limit it; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that: it can still modify the technical solutions recorded in the foregoing embodiments, or make equivalent replacement for part or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A load bearing device, characterized by, The application relates to a base (100) with a deposition ring (300) fixedly arranged on a platform (110) of the base (100), wherein a top surface of the deposition ring (300) is sequentially provided with a first ring surface (310) and a second ring surface (320) in a radial direction, the first ring surface (310) is used for carrying a wafer, and the second ring surface (320) is provided with a limiting structure; an adjusting ring (400) is lapped and limited on the second ring surface (320) through the limiting structure; and a finger (200) is provided on an outer circumferential side of the base (100) and is used for supporting the wafer and the adjusting ring (400). The finger (200) and the base (100) are configured to be capable of placing the wafer on the first ring surface (310) or separating the wafer from the first ring surface (310) upward or downward during relative lifting of the two, and capable of placing the adjusting ring (400) on the second ring surface (320) or separating the adjusting ring (400) from the second ring surface (320) upward or downward. The limiting structure comprises a limiting groove (321) recessed on the second ring surface (320) and used for accommodating a lower area of the adjusting ring (400). Or, the limiting structure comprises a limiting protrusion upwardly protruding from the second ring surface (320) and used for limiting an inner side wall or an outer side wall of the adjusting ring (400) in a radial direction. The limiting groove (321) is an annular groove and is matched with the adjusting ring (400).

2. The load bearing device of claim 1, wherein, And / or, the limiting protrusion is an annular protrusion and is matched with the inner side wall or the outer side wall of the adjusting ring (400). The second ring surface (320) is higher than the first ring surface (310).

3. The load bearing device of claim 2, wherein, The deposition ring (300) is provided with a plurality of first through grooves for the finger (200) to pass through. An outer edge of the platform of the base (100) is provided with a plurality of second through grooves located directly below the first through grooves and used for the finger (200) to pass through.

4. The load bearing device of any of claims 1-3, wherein, The finger (200) is provided with a first supporting surface (211) and a second supporting surface (231) arranged upwardly.

5. The load bearing device of any of claims 1-3, wherein, The first supporting surface (211) is arranged at a fingertip of the finger (200) and forms an L-shaped opening groove structure with an inner wall surface of the fingertip, and the first supporting surface (211) is used for supporting the wafer.

6. The load bearing device of claim 5, wherein, The second supporting surface (231) is arranged below the first supporting surface (211) and forms an L-shaped opening groove structure with an outer wall surface of the finger (200), and the second supporting surface (231) is used for supporting the adjusting ring (400).

7. The load bearing device of any of claims 1-3, wherein, The first supporting surface (211) and the second supporting surface (231) have a preset height difference. The preset height difference is configured to keep a gap between the second supporting surface (231) and a bottom end of the adjusting ring (400) when the first supporting surface (211) of the finger (200) supports the wafer. An inner wall edge of the fingertip is provided with a transition surface arranged obliquely upwardly.

8. The load bearing device of claim 7, wherein, ​ ​ 9. The load bearing device of claim 7, wherein, ​ And / or, the second supporting surface (231) has a guide slope (240) obliquely arranged at the junction with the outer wall surface of the finger (200), and the slope surface of the guide slope (240) faces obliquely upward.

10. A semiconductor process apparatus, characterized by, The chamber (10), the shielding ring (30) and the bearing device of any one of claims 1-9 are all located in the chamber (10); the deposition ring (300) is located below the shielding ring (30), and the inner ring contour of the shielding ring (30) can be vertically projected to the first ring surface (310) of the deposition ring (300).

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