Circuit board surface micro-etching monitoring method and device, computer equipment and storage medium

Abstract

The invention provides a circuit board surface micro-etching monitoring method and device, computer equipment and a storage medium, and the method comprises the steps: obtaining the component parameters of a current micro-etching agent for the surface of a circuit board, carrying out the differential processing of a current hydrogen peroxide parameter and a preset hydrogen peroxide parameter according to a current copper ion parameter, and obtaining a current copper ion parameter; performing differential treatment on the current sulfuric acid parameter and a preset sulfuric acid parameter; and according to the first concentration difference and / or the second concentration difference, sending a micro-etching compensation signal to a micro-etching agent management system for the surface of the circuit board. When surface micro-etching treatment is carried out on the circuit board, component parameters of a current micro-etching agent are obtained, then according to copper ion parameters, hydrogen peroxide parameters and sulfuric acid parameters are compared with corresponding preset parameters to determine corresponding difference values, and the hydrogen peroxide parameters and / or the sulfuric acid parameters are / is adjusted according to the difference values to be within the preset parameters, so that the content of the copper ions in the micro-etching agent is determined. By optimizing the formula of the micro-etching agent for the surface of the circuit board, the uniform micro-etching effect is achieved, and the galvanic effect is inhibited.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the technical field of circuit board production, in particular to a circuit board surface micro-etching monitoring method and device, computer equipment and storage medium. BACKGROUND

[0002] In the process of circuit board production, surface treatment needs to be performed on the circuit board before electrical testing to ensure stable connection between subsequent components and the circuit board.

[0003] However, the Javelli effect often brings many problems to metal processing in the surface treatment process, such as accelerated metal corrosion, reduced plating layer adhesion, affected product appearance and service life, and seriously limits the application and development of surface treatment technology.

[0004] The traditional surface treatment micro-etching agent has problems such as uneven micro-etching effect, large damage to the substrate, and inability to effectively inhibit the Javelli effect. Therefore, how to optimize the micro-etching agent formula is still a problem to be solved by those skilled in the art. SUMMARY

[0005] The purpose of the present disclosure is to overcome the deficiencies in the prior art and provide a circuit board surface micro-etching monitoring method and device, computer equipment and storage medium that can inhibit the Javelli effect by adjusting the concentration of copper, hydrogen peroxide and sulfuric acid to ensure the adhesion of the plating layer and the uniformity of micro-etching.

[0006] The purpose of the present disclosure is achieved by the following technical solutions:

[0007] A circuit board surface micro-etching monitoring method includes the following steps:

[0008] S101, real-time acquisition of the composition parameters of the micro-etching agent for the current circuit board surface, wherein the composition parameters include the current copper ion parameter, the current hydrogen peroxide parameter and the current sulfuric acid parameter;

[0009] S102, according to the current copper ion parameter, differentiating the current hydrogen peroxide parameter from the preset hydrogen peroxide parameter to obtain a first concentration difference, and differentiating the current sulfuric acid parameter from the preset sulfuric acid parameter to obtain a second concentration difference;

[0010] S103, according to the first concentration difference and / or the second concentration difference, sending a micro-etching compensation signal to the micro-etching agent management system for the circuit board surface to adjust the composition parameters of the micro-etching agent for the circuit board surface.

[0011] In one of the embodiments, when performing S101, the method specifically includes the following steps: obtaining the composition parameters of the current microetchant for circuit board surface, wherein the composition parameters include the current copper ion concentration value, the current hydrogen peroxide concentration ratio value and the current sulfuric acid concentration ratio value.

[0012] In one of the embodiments, when performing S102, the method specifically includes the following steps:

[0013] According to the current copper ion parameter value, a difference value between the current hydrogen peroxide concentration ratio value and a preset upper limit value of hydrogen peroxide concentration is calculated, which is recorded as a first ratio difference value;

[0014] A difference value between the current sulfuric acid concentration ratio value and a preset upper limit value of sulfuric acid concentration is calculated, which is recorded as a second ratio difference value.

[0015] In one of the embodiments, when performing S103, the method specifically includes the following steps:

[0016] It is detected whether the first ratio difference value is less than a preset lower limit difference value of hydrogen peroxide concentration;

[0017] If the first ratio difference value is less than the preset lower limit difference value of hydrogen peroxide concentration, a first increment signal is sent to the microetchant management system for circuit board surface to increase the percentage of hydrogen peroxide in the microetchant for circuit board surface.

[0018] In one of the embodiments, after detecting whether the first ratio difference value is less than the preset lower limit difference value of hydrogen peroxide concentration, the method further includes:

[0019] If the first ratio difference value is greater than or equal to the preset lower limit difference value of hydrogen peroxide concentration and the first ratio difference value is less than a critical difference value of upper limit of hydrogen peroxide concentration, it is detected whether the second ratio difference value is less than a preset lower limit difference value of sulfuric acid concentration;

[0020] If the second ratio difference value is less than the preset lower limit difference value of sulfuric acid concentration, a second increment signal is sent to the microetchant management system for circuit board surface to increase the percentage of sulfuric acid in the microetchant for circuit board surface.

[0021] In one of the embodiments, after performing S101 and before performing S102, the method includes the following steps:

[0022] It is detected whether the current copper ion parameter is greater than or equal to a critical region parameter of copper ion;

[0023] If the current copper ion parameter is greater than or equal to the critical region parameter of copper ion, a monitoring stop signal is sent to the microetchant management system for circuit board surface.

[0024] In one of the embodiments, the detecting whether the current copper ion parameter is greater than or equal to the copper ion critical zone parameter further includes: if the current copper ion parameter is less than the copper ion critical zone parameter, performing S102.

[0025] A circuit board surface micro-etching monitoring device includes:

[0026] A micro-etchant collection module is configured to acquire, in real time, a composition parameter of a current micro-etchant for a circuit board surface, wherein the composition parameter includes a current copper ion parameter, a current hydrogen peroxide parameter, and a current sulfuric acid parameter.

[0027] A difference calculation module is configured to perform difference processing on the current hydrogen peroxide parameter and a preset hydrogen peroxide parameter to obtain a first concentration difference, and perform difference processing on the current sulfuric acid parameter and a preset sulfuric acid parameter to obtain a second concentration difference, according to the current copper ion parameter.

[0028] A difference compensation output module is configured to send a micro-etching compensation signal to a micro-etchant management system for a circuit board surface, to adjust the composition parameter of the micro-etchant for the circuit board surface, according to the first concentration difference and / or the second concentration difference.

[0029] A computer device includes a memory and a processor, the memory stores a computer program, and the processor implements the following steps when executing the computer program:

[0030] A composition parameter of a current micro-etchant for a circuit board surface is acquired, wherein the composition parameter includes a current copper ion parameter, a current hydrogen peroxide parameter, and a current sulfuric acid parameter.

[0031] Difference processing is performed on the current hydrogen peroxide parameter and a preset hydrogen peroxide parameter to obtain a first concentration difference, and difference processing is performed on the current sulfuric acid parameter and a preset sulfuric acid parameter to obtain a second concentration difference, according to the current copper ion parameter.

[0032] A micro-etching compensation signal is sent to a micro-etchant management system for a circuit board surface, to adjust the composition parameter of the micro-etchant for the circuit board surface, according to the first concentration difference and / or the second concentration difference.

[0033] A readable storage medium has a computer program stored thereon, and the computer program is executed by a processor to implement the following steps:

[0034] A composition parameter of a current micro-etchant for a circuit board surface is acquired, wherein the composition parameter includes a current copper ion parameter, a current hydrogen peroxide parameter, and a current sulfuric acid parameter.

[0035] According to the current copper ion parameter, the current hydrogen peroxide parameter is processed by difference with a preset hydrogen peroxide parameter to obtain a first concentration difference, and the current sulfuric acid parameter is processed by difference with a preset sulfuric acid parameter to obtain a second concentration difference;

[0036] According to the first concentration difference and / or the second concentration difference, a micro-etching compensation signal is sent to a circuit board surface micro-etching agent management system to adjust the composition parameter of the circuit board surface micro-etching agent.

[0037] Compared with the prior art, the present disclosure has at least the following advantages:

[0038] In the surface micro-etching process of the circuit board, the composition parameters of the current micro-etching agent are obtained, including the copper ion parameter, the hydrogen peroxide parameter and the sulfuric acid parameter. Then, according to the current copper ion parameter, the hydrogen peroxide parameter and the sulfuric acid parameter are compared with the corresponding preset parameters to determine the difference value, and the hydrogen peroxide parameter and / or the sulfuric acid parameter are adjusted according to the difference value to be within the preset parameter. By optimizing the formula of the circuit board surface micro-etching agent, the uniform micro-etching effect is achieved, the occurrence of the Javelli effect is inhibited, and the micro-etching effect is uniform and the damage to the circuit board substrate is small. BRIEF DESCRIPTION OF DRAWINGS

[0039] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the following will briefly introduce the drawings needed to be used in the embodiments. It should be understood that the following drawings only show some embodiments of the present disclosure, and therefore should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can also be obtained without creative labor.

[0040] Figure 1 A flow chart of a circuit board surface micro-etching monitoring method in an embodiment;

[0041] Figure 2 An internal structure diagram of a computer device in an embodiment. DETAILED DESCRIPTION

[0042] In order to facilitate the understanding of the present disclosure, the present disclosure will be described more fully below with reference to the related drawings. The preferred embodiments of the present disclosure are shown in the drawings. However, the present disclosure can be implemented in many different forms, and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present disclosure more thorough and comprehensive.

[0043] It should be noted that when an element is referred to as being "on" another element, it can be directly on the other element or intervening elements can also be present. When an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements can also be present. The terms "vertical", "horizontal", "left", "right" and similar expressions as used herein are for illustrative purposes only and are not intended to be limiting.

[0044] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. The terminology used in the description of the disclosure herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0045] In order to better understand the technical solutions and beneficial effects of the disclosure, the disclosure will be further described in detail below in combination with specific embodiments:

[0046] Please refer to Figure 1 which is a circuit board surface micro-etching monitoring method according to an embodiment of the present application, comprising part or all of the following steps:

[0047] S101, real-time acquisition of the composition parameters of the micro-etching agent currently used on the circuit board surface, wherein the composition parameters include the current copper ion parameter, the current hydrogen peroxide parameter and the current sulfuric acid parameter. In the present embodiment, the above-mentioned current copper ion parameter, current hydrogen peroxide parameter and current sulfuric acid parameter can be understood as the current copper ion concentration value, current hydrogen peroxide concentration value and current sulfuric acid concentration value, or can be understood as the current copper ion concentration proportion value, current hydrogen peroxide concentration proportion value and current sulfuric acid concentration proportion value. By collecting the composition parameters of the micro-etching agent currently used on the circuit board surface, especially the current copper ion parameter, current hydrogen peroxide parameter and current sulfuric acid parameter, the degree of micro-etching on the circuit board surface can be determined according to the copper ion concentration state, so as to make a preliminary preparation for comparing the current hydrogen peroxide parameter and current sulfuric acid parameter with the corresponding preset parameters. At the same time, when the circuit board surface is micro-etched, the system starts timing, at this time, the composition parameters of the micro-etching agent currently used on the circuit board surface, especially the current copper ion parameter, are real-time acquired, and the current hydrogen peroxide parameter and current sulfuric acid parameter are compared with the corresponding reference hydrogen peroxide parameter and reference sulfuric acid parameter of the copper ion parameter on the system to make a preliminary preparation for confirmation of whether adjustment is needed.

[0048] S102, according to the current copper ion parameter, the current hydrogen peroxide parameter and the preset hydrogen peroxide parameter are differentially processed to obtain the first concentration difference, and the current sulfuric acid parameter and the preset sulfuric acid parameter are differentially processed to obtain the second concentration difference. In this embodiment, the preset hydrogen peroxide parameter is the reference hydrogen peroxide concentration parameter corresponding to the current copper ion concentration parameter, and the preset sulfuric acid parameter is the reference sulfuric acid concentration parameter corresponding to the current copper ion concentration parameter. The difference between the current hydrogen peroxide parameter and the preset hydrogen peroxide parameter is processed, the difference value is obtained, that is, the first concentration difference, and whether the hydrogen peroxide concentration is adjusted is confirmed according to the difference value; the difference between the current sulfuric acid parameter and the preset sulfuric acid parameter is processed, the difference value is obtained, that is, the second concentration difference, and whether the signal is sent is confirmed according to the difference value.

[0049] S103, according to the first concentration difference and / or the second concentration difference, a micro-etching compensation signal is sent to the circuit board surface micro-etching agent management system to adjust the component parameters of the circuit board surface micro-etching agent. In this embodiment, the system determines whether to send a micro-etching compensation signal according to the difference value of the current hydrogen peroxide parameter, that is, the first concentration difference, to adjust the hydrogen peroxide concentration parameter in the circuit board surface micro-etching agent until the parameter is equal to the reference hydrogen peroxide concentration parameter; and the system also determines whether to send a micro-etching compensation signal according to the difference value of the current sulfuric acid parameter, that is, the second concentration difference, to adjust the sulfuric acid concentration parameter in the circuit board surface micro-etching agent until the parameter is equal to the reference sulfuric acid concentration parameter, and then optimize the hydrogen peroxide concentration and the sulfuric acid concentration by the content of copper ions to match the formula table adjusted on the circuit board surface micro-etching agent management system, so as to suppress the Javon effect during the micro-etching of the circuit board surface.

[0050] It can be understood that when the circuit board is treated by the micro-etching agent, generally, the micro-etching agent is an acidic micro-etching agent, which contains sulfuric acid, hydrogen peroxide (H2O2, hydrogen peroxide) and the like. Among them, sulfuric acid provides an acidic environment in the micro-etching cylinder as the main micro-etching component, and is used for biting the copper layer of the circuit board to generate copper ions, which affects the etching rate and ion diffusion; hydrogen peroxide oxidizes the copper layer of the circuit board to form a passivation layer, which directly affects the oxidation-reduction potential balance of the etching reaction. When sulfuric acid and hydrogen peroxide act on copper together, sulfuric acid inhibits the decomposition of hydrogen peroxide, maintains the uniformity of the etching front, hydrogen peroxide provides continuous oxidation ability, inhibits the micro-battery reaction, reduces the potential difference, and both of them prolong the service life of the micro-etching agent. However, too low concentration of sulfuric acid will cause part of the copper ions to be retained on the surface of the circuit, and the ions cannot diffuse, which will cause local corrosion and induce the Javon effect; too high concentration of sulfuric acid will cause excessive corrosion of the copper layer, resulting in uneven micro-etching of the surface of the circuit board; too low concentration of hydrogen peroxide will result in weak oxidation ability and slow etching rate, and the passivation layer on the copper surface is incomplete and different regions have a significant potential difference, which aggravates the Javon effect; too high concentration of hydrogen peroxide will cause local "boiling" of the copper layer, forming an uneven rough surface, expanding the potential difference, and the oxygen generated by the decomposition of hydrogen peroxide reacts with the copper layer to form a loose oxide layer, reducing the plating adhesion. Therefore, the concentration of hydrogen peroxide and sulfuric acid needs to be adjusted according to the concentration of copper ions to effectively inhibit the Javon effect.

[0051] In the above embodiment, when the circuit board is treated by the micro-etching agent, the composition parameters of the current micro-etching agent are obtained, including copper ion parameters, hydrogen peroxide parameters and sulfuric acid parameters. Then, according to the current copper ion parameters, the hydrogen peroxide parameters and the sulfuric acid parameters are compared with the corresponding preset parameters to determine the corresponding difference values, and the hydrogen peroxide parameters and / or the sulfuric acid parameters are adjusted according to the difference value conditions to be within the preset parameters. By optimizing the formula of the micro-etching agent on the surface of the circuit board, a uniform micro-etching effect is achieved, the occurrence of the Javon effect is inhibited, and the micro-etching effect is uniform and the damage to the circuit board substrate is small.

[0052] In one of the embodiments, when performing S101, it specifically includes the following steps: obtaining the composition parameters of the current micro-etchant for the circuit board surface, wherein the composition parameters include the current copper ion concentration value, the current hydrogen peroxide concentration ratio and the current sulfuric acid concentration ratio. It can be understood that by collecting the composition parameters of the current micro-etchant for the circuit board surface, especially the current copper ion concentration value, the current hydrogen peroxide concentration ratio and the current sulfuric acid concentration ratio, the micro-etching degree of the circuit board surface is determined according to the copper ion concentration state, so as to make a preliminary preparation for comparing the current hydrogen peroxide concentration ratio and the current sulfuric acid concentration ratio with the corresponding preset parameter ratio in the next step. For example, in the process of micro-etching the circuit board surface, the collected copper ion concentration is 3g / L, the hydrogen peroxide concentration ratio is 21%, and the sulfuric acid concentration ratio is 14%.

[0053] Further, when performing S102, it specifically includes the following steps: according to the current copper ion parameter value, calculating the difference value between the current hydrogen peroxide concentration ratio and the preset upper limit value of the hydrogen peroxide concentration, denoted as the first ratio difference value; calculating the difference value between the current sulfuric acid concentration ratio and the preset upper limit value of the sulfuric acid concentration, denoted as the second ratio difference value.

[0054] It can be understood that the preset upper limit value of the hydrogen peroxide concentration is the reference upper limit value of the hydrogen peroxide concentration corresponding to the current copper ion concentration parameter, that is, the preset hydrogen peroxide parameter, i.e. the reference hydrogen peroxide concentration has an upper limit value and a lower limit value; the preset upper limit value of the sulfuric acid concentration is the reference upper limit value of the sulfuric acid concentration corresponding to the current copper ion concentration parameter, that is, the preset sulfuric acid parameter, i.e. the reference sulfuric acid concentration has an upper limit value and a lower limit value. Calculating the difference value between the current hydrogen peroxide concentration ratio and the preset upper limit value of the hydrogen peroxide concentration is to process the difference degree between the current hydrogen peroxide concentration ratio and the preset upper limit value of the hydrogen peroxide concentration, and to obtain the difference degree value, i.e. the first ratio difference value, and to determine whether to increase or decrease the hydrogen peroxide concentration according to the difference degree value; calculating the difference value between the current sulfuric acid concentration ratio and the preset upper limit value of the sulfuric acid concentration is to process the difference degree between the current sulfuric acid concentration ratio and the preset upper limit value of the sulfuric acid concentration, and to obtain the difference degree value, i.e. the second ratio difference value, and to determine whether to increase or decrease the sulfuric acid concentration according to the difference degree value. Specifically, after obtaining the current copper ion concentration value, the current hydrogen peroxide concentration ratio and the current sulfuric acid concentration ratio, the current hydrogen peroxide concentration ratio is compared with the reference hydrogen peroxide concentration ratio corresponding to the current copper ion concentration value, and the current sulfuric acid concentration ratio is compared with the reference sulfuric acid concentration ratio corresponding to the current copper ion concentration value, so as to confirm the corresponding difference degree value and make a preliminary preparation for issuing the adjustment signal.

[0055] It can also be understood that since the preset hydrogen peroxide parameter has an upper limit and a lower limit, that is, it has a preset interval of hydrogen peroxide concentration, and the preset sulfuric acid parameter has an upper limit and a lower limit, that is, it has a preset interval of sulfuric acid concentration, when the current hydrogen peroxide concentration is within the preset interval of hydrogen peroxide concentration, and the current sulfuric acid concentration is within the preset interval of sulfuric acid concentration, there is no need to send a signal to the system. Otherwise, when at least one condition is not met, a signal is sent to the micro-etching agent management system on the surface of the circuit board to adjust the hydrogen peroxide concentration and / or sulfuric acid concentration to suppress the occurrence of the Galvani effect.

[0056] Furthermore, when executing S103, the following steps are specifically included: detecting whether the first ratio difference is less than the upper limit difference of the preset hydrogen peroxide concentration; if the first ratio difference is less than the upper limit difference of the preset hydrogen peroxide concentration, sending a first incremental signal to the micro-etching agent management system for the circuit board surface to increase the percentage of hydrogen peroxide in the micro-etching agent on the circuit board surface.

[0057] In this embodiment, the preset upper and lower limit difference of the hydrogen peroxide concentration is the difference between the lower limit and the upper limit of the benchmark hydrogen peroxide concentration, and the first ratio difference is the difference between the current hydrogen peroxide concentration and the upper limit of the benchmark hydrogen peroxide concentration. When the first ratio difference is less than the preset upper and lower limit difference of the hydrogen peroxide concentration, it can be determined that the hydrogen peroxide concentration is too low. At this time, a first incremental signal is sent to the micro-etching agent management system for the circuit board surface to increase the percentage of hydrogen peroxide in the micro-etching agent on the circuit board surface, thereby preventing the micro-etching from being uneven due to weak oxidation ability and obvious potential difference caused by too low hydrogen peroxide concentration, thereby ensuring that the copper layer of the circuit board can be fully micro-etched. The first incremental signal is an enable signal for increasing the hydrogen peroxide concentration.

[0058] In another embodiment, detecting whether the current first ratio difference is less than a preset upper limit of hydrogen peroxide concentration further includes: if the first ratio difference is greater than or equal to a preset lower upper limit of hydrogen peroxide concentration, and the first ratio difference is less than a critical upper limit of hydrogen peroxide concentration, detecting whether the second ratio difference is less than a preset lower upper limit of sulfuric acid concentration; if the second ratio difference is less than the preset lower upper limit of sulfuric acid concentration, sending a second incremental signal to the micro-etching agent management system for the circuit board surface to increase the percentage of sulfuric acid in the micro-etching agent on the circuit board surface.

[0059] It can be understood that when the first ratio difference is greater than or equal to the preset upper limit difference of the hydrogen peroxide concentration, and the first ratio difference is less than the upper limit critical difference of the hydrogen peroxide concentration, it can be determined that the hydrogen peroxide concentration is between the upper limit value and the lower limit value of the reference hydrogen peroxide concentration, and no adjustment of the hydrogen peroxide concentration is made, and the current sulfuric acid concentration is detected. The preset lower limit difference of the sulfuric acid concentration is the difference between the lower limit value and the upper limit value of the reference sulfuric acid concentration, and the second ratio difference is the difference between the current sulfuric acid concentration and the upper limit value of the reference sulfuric acid concentration. When the second ratio difference is less than the preset lower limit difference of the sulfuric acid concentration, it can be determined that the concentration of sulfuric acid is too low. At this time, a second incremental signal is sent to the circuit board surface etchant management system to increase the percentage of sulfuric acid on the circuit board surface to prevent copper ions from being retained on the circuit surface and to prevent the reaction of oxygen generated by the decomposition of hydrogen peroxide with the copper layer, which hinders the etching of the copper layer. The second incremental signal is an increase in the sulfuric acid concentration enable signal, and the upper limit critical difference of the hydrogen peroxide concentration is 0. For example, the collected copper ion concentration is 3g / L, the hydrogen peroxide concentration ratio is 16%, and the sulfuric acid concentration ratio is 14%. The upper limit value of the reference hydrogen peroxide concentration is 27.4%, the lower limit value is 18.3%, the preset lower limit difference of the hydrogen peroxide concentration is -9.1%, the first ratio difference is -11.4%, which is less than the preset lower limit difference of the hydrogen peroxide concentration, and it is determined that the hydrogen peroxide concentration is low, and a signal is sent to the system to increase the percentage of hydrogen peroxide concentration. For another example, the collected copper ion concentration is 5g / L, the hydrogen peroxide concentration ratio is 20%, and the sulfuric acid concentration ratio is 7%. The upper limit value of the reference hydrogen peroxide concentration is 25.8%, the lower limit value is 17.2%, the upper limit value of the reference sulfuric acid concentration is 17.2%, the lower limit value is 8.6%, the preset lower limit difference of the hydrogen peroxide concentration is -9.1%, the first ratio difference is -5.8%, which is greater than the preset lower limit difference of the hydrogen peroxide concentration, and less than the upper limit critical difference of the hydrogen peroxide concentration, the preset lower limit difference of the sulfuric acid concentration is -8.6%, and the second ratio difference is -10.2%, which is less than the preset lower limit difference of the sulfuric acid concentration. It is determined that the hydrogen peroxide concentration is normal, but the sulfuric acid concentration is low, and a signal is sent to the system to increase the percentage of sulfuric acid concentration.

[0060] In another embodiment, if the first ratio difference value is greater than or equal to the upper limit critical difference value of the hydrogen peroxide concentration, a first reduction signal is sent to the circuit board surface micro-etchant management system to reduce the percentage of hydrogen peroxide in the circuit board surface micro-etchant. It can be understood that the upper limit critical difference value of the hydrogen peroxide concentration is 0, so as to determine whether the first ratio difference value exceeds the upper limit critical difference value of the hydrogen peroxide concentration, that is, to facilitate the determination of whether the current hydrogen peroxide concentration exceeds the upper limit value of the reference hydrogen peroxide concentration. When the first ratio difference value is greater than or equal to the upper limit critical difference value of the hydrogen peroxide concentration, it can be determined that the hydrogen peroxide concentration is too high. At this time, the first reduction signal is sent to the circuit board surface micro-etchant management system to reduce the percentage of hydrogen peroxide in the circuit board surface micro-etchant, so as to prevent the copper layer from reacting violently locally due to the high concentration of hydrogen peroxide, causing uneven roughening of the circuit board, and preventing the reaction between the oxygen generated by the decomposition of hydrogen peroxide and the copper layer, which hinders the micro-etching of the copper layer. The normal micro-etching of the circuit board surface is ensured, wherein the first reduction signal is a hydrogen peroxide concentration reduction enable signal. For example, the acquired collected copper ion concentration is 3 g / L, the hydrogen peroxide concentration ratio is 30%, the sulfuric acid concentration ratio is 14%, the upper limit value of the reference hydrogen peroxide concentration is 27.4%, the lower limit value is 18.3%, the upper limit critical difference value of the hydrogen peroxide concentration is 0, the first ratio difference value is 2.6%, which is greater than the upper limit critical difference value of the hydrogen peroxide concentration, and it is determined that the hydrogen peroxide concentration is high. Further, a signal is sent to the system to reduce the percentage of hydrogen peroxide concentration.

[0061] In another embodiment, if the second ratio difference value is greater than or equal to the preset lower limit difference value of the sulfuric acid concentration and the second ratio difference value is less than the upper limit critical difference value of the sulfuric acid concentration, no processing is performed. That is, when the first ratio difference value is greater than or equal to the preset lower limit difference value of the hydrogen peroxide concentration and the first ratio difference value is less than the upper limit critical difference value of the hydrogen peroxide concentration, and the second ratio difference value is greater than or equal to the preset lower limit difference value of the sulfuric acid concentration and the second ratio difference value is less than the upper limit critical difference value of the sulfuric acid concentration, it can be determined that the current hydrogen peroxide concentration is between the upper limit value and the lower limit value of the reference hydrogen peroxide concentration, and the current sulfuric acid concentration is between the upper limit value and the lower limit value of the reference sulfuric acid concentration, so that no corresponding adjustment signal is sent for processing.

[0062] In another embodiment, if the second ratio difference is greater than or equal to the upper limit critical difference of the sulfuric acid concentration, a second reduction signal is sent to the surface micro-etching agent management system to reduce the percentage of sulfuric acid in the surface micro-etching agent. It can be understood that the upper limit critical difference of the sulfuric acid concentration is 0, so as to determine whether the second ratio difference exceeds the upper limit critical difference of the sulfuric acid concentration, that is, to facilitate the determination of whether the current calculation concentration exceeds the upper limit value of the reference sulfuric acid concentration, when the second ratio difference is greater than or equal to the upper limit critical difference of the sulfuric acid concentration, it can be determined that the sulfuric acid concentration is too high, at this time, the second reduction signal is sent to the surface micro-etching agent management system to reduce the percentage of sulfuric acid in the surface micro-etching agent, to prevent excessive corrosion of the copper layer caused by the high concentration of sulfuric acid, and to ensure the quality of the surface micro-etching of the circuit board, wherein the second reduction signal is a reduction signal of the sulfuric acid concentration.

[0063] In one embodiment, after S101 is performed and before S102 is performed, the following step is included: detecting whether the current copper ion parameter is greater than or equal to the copper ion critical zone parameter; if the current copper ion parameter is greater than or equal to the copper ion critical zone parameter, a monitoring stop signal is sent to the surface micro-etching agent management system. In this embodiment, the copper ion critical zone parameter is the critical value of the copper ion content when the micro-etching agent needs to be replaced, that is, the critical value of the copper ion content when the surface micro-etching agent for the circuit board needs to be replaced. During the surface micro-etching of the circuit board, the micro-etching device first acquires the current copper ion parameter, the current hydrogen peroxide parameter and the current sulfuric acid parameter, that is, the copper ion concentration, the hydrogen peroxide concentration and the sulfuric acid concentration. The copper ion concentration is the focus of detection. When the copper ion concentration of the surface micro-etching agent for the circuit board is high, that is, exceeds the critical point, it can be determined that the current micro-etching agent does not have the condition of uniform micro-etching of the copper layer of the circuit board, that is, the micro-etching agent cannot continue to micro-etch the copper layer. At this time, a monitoring stop signal is sent to the surface micro-etching agent management system to suspend the surface micro-etching process of the circuit board, and an acoustic signal / optical signal is used to inform the operator, and then a new micro-etching agent is replaced. When the replacement of the micro-etching agent is completed and the execution instruction is received, the surface micro-etching process of the circuit board is continued.

[0064] In one embodiment, the specific value of the copper ion critical zone parameter is 20 g / L. When the collected copper ion content exceeds the specific value, a monitoring stop signal is sent to the surface micro-etching agent management system.

[0065] In another embodiment, after detecting whether the current copper ion parameter is greater than or equal to the copper ion critical zone parameter, the following step is further included: if the current copper ion parameter is less than the copper ion critical zone parameter, S102 is performed to adjust the hydrogen peroxide concentration and the sulfuric acid concentration according to the current copper ion concentration, so that they are located between the upper limit value and the lower limit value of the corresponding reference concentration.

[0066] When the surface of the circuit board is treated, it is necessary to reasonably adjust the proportion of the concentration of hydrogen peroxide and sulfuric acid. If the proportion of any one is too high, the surface micro-etching effect of the circuit board will be poor, and the subsequent plating bonding force cannot be guaranteed. Specifically, when the concentration of hydrogen peroxide is too high, the copper layer will be excessively oxidized, and hydrogen peroxide will decompose under the condition of rising ambient temperature, thereby causing "violent boiling", i.e. the generation of oxygen by itself, resulting in uncontrolled etching of the copper layer, excessive plating bonding force, and surface cracking. When the concentration of sulfuric acid is too high, the copper layer will be excessively corroded, and even the surface of the substrate will be flaky, reducing the plating bonding force and affecting the electrical performance of the circuit board, thereby causing circuit open / short circuit.

[0067] To solve the above problems, after S103, part or all of the following steps are further included:

[0068] S1041, obtaining the adjusted current hydrogen peroxide parameter and the current sulfuric acid parameter;

[0069] S1042, performing ratio calculation on the current hydrogen peroxide parameter and the current sulfuric acid parameter to obtain a current ratio value;

[0070] S1043, detecting whether the current ratio value matches the reference ratio value;

[0071] S1044, if the current ratio value does not match the reference ratio value, sending a ratio abnormal alarm signal to the micro-etchant management system for the surface of the circuit board.

[0072] In this embodiment, the adjusted current hydrogen peroxide parameter and the current sulfuric acid parameter can be represented as the concentration value of the current hydrogen peroxide and the concentration value of the current sulfuric acid parameter, or as the concentration proportion value of the current hydrogen peroxide and the concentration proportion value of the current sulfuric acid. The ratio calculation of the two parameters obtains the current ratio value, i.e. the ratio of the two parameters is calculated and the ratio value is obtained. If the ratio value does not match the reference ratio value, it is confirmed that the proportion of the current hydrogen peroxide parameter and the current sulfuric acid parameter is unreasonable, and a ratio abnormal alarm signal is sent to the micro-etchant management system for the surface of the circuit board to prevent the circuit board production quality problem caused by the continuous surface micro-etching of the circuit board. Specifically, the reference ratio value is 2, i.e. the ratio of the preset hydrogen peroxide parameter to the preset sulfuric acid parameter is 2:1. Further, the error value allowed by the reference ratio value is ±0.1.

[0073] Further, when S1044 is performed, the following steps are specifically included:

[0074] S1044A, if the current ratio value is lower than the reference ratio value, a first ratio abnormal alarm signal is sent to the micro-etchant management system for the surface of the circuit board, otherwise S1044B is performed;

[0075] S1044B, if the current ratio value is higher than the reference ratio value, a second ratio abnormal alarm signal is sent to the micro-etchant management system for circuit board surface.

[0076] In the embodiment, if the current ratio value is lower than the reference ratio value, it is confirmed that the proportion of sulfuric acid concentration is too high, and it is further confirmed that the situation of excessive micro-etching of the circuit board surface exists, so that the plating layer bonding force of the circuit board is too weak. A first ratio abnormal alarm signal is sent to the micro-etchant management system for circuit board surface, so as to timely warn the sulfuric acid parameter situation of the micro-etchant for circuit board surface, avoid unnecessary excessive micro-etching caused by too high proportion of sulfuric acid concentration, and appropriately enhance the plating layer bonding force of the circuit board. If the current ratio value is higher than the reference ratio value, it is confirmed that the proportion of hydrogen peroxide concentration is too high, and it is further confirmed that the situation of excessive oxidation of the copper layer of the circuit board exists, and the copper layer etching is out of control, so that the plating layer bonding force of the circuit board is too strong. A second ratio abnormal alarm signal is sent to the micro-etchant management system for circuit board surface, so as to timely warn the hydrogen peroxide parameter situation of the micro-etchant for circuit board surface, avoid the "violent boiling" situation caused by its own decomposition due to too high proportion of hydrogen peroxide, and appropriately reduce the plating layer bonding force of the circuit board. The first ratio abnormal alarm signal is a sulfuric acid proportion too high abnormal signal, and the second ratio abnormal alarm signal is a hydrogen peroxide proportion too high abnormal signal.

[0077] In another embodiment, after S1043 is performed, the following steps are included:

[0078] S1045A, if the current ratio value matches the reference ratio value, the pressure load value of the circuit board plating layer is obtained;

[0079] S1045B, detecting that the pressure load value of the circuit board plating layer is greater than the reference load value;

[0080] S1045C, if the pressure load value of the circuit board plating layer is greater than the reference load value, a first bonding force abnormal alarm signal is sent to the micro-etchant management system for circuit board surface.

[0081] In the embodiment, the reference load value is the reference bonding force of the circuit board plating layer, and when the current ratio value matches the reference ratio value, it indicates that the current ratio value is equal to the reference ratio value, and also indicates that the ratio of the hydrogen peroxide concentration to the sulfuric acid concentration reaches the reference value, i.e., is equal to the reference ratio value or fluctuates within the allowable error range (e.g., ±0.1) of the reference ratio value, and can reach the bonding force of the circuit board plating layer in a reasonable ratio. However, when the circuit board surface is etched, the ratio value of the initial hydrogen peroxide concentration to the sulfuric acid concentration is too high and cannot reach the reference value. After adjustment, the reference value is reached. That is, the current ratio value is higher than the reference ratio value in the first half of the time, which will affect the bonding force of the circuit board plating layer. In the second half of the time, the current ratio value is equal to the reference ratio value, which affects the overall plating bonding force. Therefore, the pressure load value of the circuit board plating layer is collected, wherein the pressure load value is represented as the force value when a trace is drawn on the circuit board plating layer, to confirm whether the reference bonding is reached. For example, when a trace is drawn on the circuit board plating layer by a probe, if the pressure load value obtained at the moment of drawing the trace is greater than the reference load value, it is confirmed that the bonding force of the circuit board plating layer is too high. At this time, a first bonding force abnormal alarm signal is sent to the micro-etchant management system for the circuit board surface to appropriately reduce the concentration of hydrogen peroxide, i.e., to appropriately reduce the ratio between the current hydrogen peroxide parameter and the current sulfuric acid parameter, to ensure the reliability of the subsequent micro-etching of the circuit board surface.

[0082] In another embodiment, if the pressure load value of the circuit board plating layer is less than the reference load value, a second bonding force abnormal alarm signal is sent to the micro-etchant management system for the circuit board surface. That is, when the copper layer is drawn at the moment of drawing the trace, if the pressure load value obtained is less than the reference load value, it is confirmed that the bonding force of the circuit board plating layer is too low. At this time, a second bonding force abnormal alarm signal is sent to the micro-etchant management system for the circuit board surface to appropriately reduce the concentration of sulfuric acid, i.e., to appropriately increase the ratio between the current hydrogen peroxide parameter and the current sulfuric acid parameter, to ensure the reliability of the subsequent micro-etching of the circuit board surface.

[0083] In another embodiment, if the pressure load value of the circuit board plating layer is equal to the reference load value, no abnormal signal is sent.

[0084] The above-mentioned reference value or preset value exists in the database for easy extraction, and different reference values or preset values are located in different parameter units, and the adjusted current hydrogen peroxide parameter, the adjusted current sulfuric acid parameter, and the pressure load value can be collected by the corresponding detector.

[0085] The present disclosure also provides a circuit board surface micro-etching monitoring device, comprising a micro-etching agent acquisition module, a difference calculation module and a difference compensation output module. The micro-etching agent acquisition module is used to acquire the composition parameters of the current micro-etching agent for the circuit board surface in real time, wherein the composition parameters include the current copper ion parameter, the current hydrogen peroxide parameter and the current sulfuric acid parameter. The difference calculation module is used to perform difference processing on the current hydrogen peroxide parameter and the preset hydrogen peroxide parameter according to the current copper ion parameter to obtain a first concentration difference, and perform difference processing on the current sulfuric acid parameter and the preset sulfuric acid parameter to obtain a second concentration difference. The difference compensation output module is used to send a micro-etching compensation signal to a micro-etching agent management system for the circuit board surface according to the first concentration difference and / or the second concentration difference, so as to adjust the composition parameters of the micro-etching agent for the circuit board surface.

[0086] In the above embodiment, when the circuit board is subjected to surface micro-etching treatment, the composition parameters of the current micro-etching agent are acquired, including the copper ion parameter, the hydrogen peroxide parameter and the sulfuric acid parameter. Then, according to the current copper ion parameter, the hydrogen peroxide parameter and the sulfuric acid parameter are compared with the corresponding preset parameters to determine the corresponding difference values, and the hydrogen peroxide parameter and / or the sulfuric acid parameter is adjusted according to the difference values to be within the preset parameters. By optimizing the formula of the micro-etching agent for the circuit board surface, a uniform micro-etching effect is achieved, the occurrence of the Javelli effect is inhibited, and the micro-etching effect is uniform and less damaging to the circuit board substrate.

[0087] In one embodiment, a computer device, which can be a server, has an internal structure diagram as shown in Figure 2 The computer device includes a processor, a memory and a network interface connected through a system bus. The processor of the computer device is used to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system, a computer program and a database. The internal memory provides an environment for the operation of the operating system and the computer program in the non-volatile storage medium. The database of the computer device is used to store data such as the current copper ion parameter, the current hydrogen peroxide parameter, the current sulfuric acid parameter, the preset hydrogen peroxide parameter, the preset sulfuric acid parameter and the micro-etching compensation signal. The network interface of the computer device is used to communicate with an external terminal through a network connection. The computer program is executed by the processor to implement a circuit board surface micro-etching monitoring method.

[0088] Those skilled in the art can understand that Figure 2 The structure shown in the above embodiment is only a block diagram of part of the structure related to the scheme of the present application, and does not constitute a limitation on the computer device to which the scheme of the present application is applied. The specific computer device can include more or fewer components than those shown in the figure, or combine certain components, or have a different component arrangement.

[0089] The application further provides a computer device, comprising a memory and a processor, the memory storing a computer program, wherein the computer program records current copper ion parameters, current hydrogen peroxide parameters, current sulfuric acid parameters, preset hydrogen peroxide parameters, preset sulfuric acid parameters and micro-etching compensation signals and the like, and the processor implements the steps in the above method embodiments when executing the computer program.

[0090] The application further provides a computer readable storage medium, which stores a computer program, wherein the computer program records current copper ion parameters, current hydrogen peroxide parameters, current sulfuric acid parameters, preset hydrogen peroxide parameters, preset sulfuric acid parameters and micro-etching compensation signals and the like, and the computer program implements the steps in the above method embodiments when executed by a processor.

[0091] Those skilled in the art can understand that all or part of the processes in the above method embodiments can be completed by a computer program instructing related hardware, and the computer program can be stored in a non-volatile computer readable storage medium. When the computer program is executed, the processes of the above method embodiments can be included. Any reference to a memory, storage, database or other medium in each embodiment provided by the application can include at least one of a non-volatile and volatile memory. The non-volatile memory can include a read-only memory (ROM), a magnetic tape, a floppy disk, a flash memory or an optical memory. The volatile memory can include a random access memory (RAM) or an external cache memory. As an illustration but not limitation, the RAM can be in various forms, such as a static random access memory (SRAM) or a dynamic random access memory (DRAM).

[0092] Compared with the prior art, the present disclosure has at least the following advantages:

[0093] In the surface micro-etching treatment of the circuit board, the composition parameters of the current micro-etching agent are obtained, including copper ion parameters, hydrogen peroxide parameters and sulfuric acid parameters. Then, according to the current copper ion parameters, the hydrogen peroxide parameters and the sulfuric acid parameters are compared with the corresponding preset parameters to determine the corresponding difference values, and the hydrogen peroxide parameters and / or the sulfuric acid parameters are adjusted according to the difference values to be within the preset parameters. By optimizing the formula of the micro-etching agent on the surface of the circuit board, a uniform micro-etching effect is achieved, the occurrence of the Javelli effect is inhibited, and the micro-etching effect is uniform and the damage to the circuit board substrate is small.

[0094] The above-described embodiments are merely illustrative of several embodiments of the present disclosure, which are described in a more specific and detailed manner, but should not be construed as limiting the scope of the patent disclosure. It should be noted that for those skilled in the art, several modifications and improvements can be made without departing from the concept of the present disclosure, and these all belong to the protection scope of the present disclosure. Therefore, the protection scope of the patent of the present disclosure should be subject to the appended claims.

Claims

1. A method of monitoring microetching of a surface of a wiring board, characterized by, The method comprises the following steps: S101, real-time acquisition of a current circuit board surface micro-etchant composition parameter, wherein the composition parameter comprises a current copper ion parameter, a current hydrogen peroxide parameter and a current sulfuric acid parameter; S102, difference processing of the current hydrogen peroxide parameter and a preset hydrogen peroxide parameter according to the current copper ion parameter to obtain a first concentration difference, and difference processing of the current sulfuric acid parameter and a preset sulfuric acid parameter to obtain a second concentration difference; S103, sending of a micro-etching compensation signal to a circuit board surface micro-etchant management system according to the first concentration difference and / or the second concentration difference to adjust the composition parameter of the circuit board surface micro-etchant.

2. The method of claim 1, wherein the step of monitoring the surface microetching of the circuit board is performed by using a camera. When S101 is executed, the following steps are specifically included: Acquisition of a current circuit board surface micro-etchant composition parameter, wherein the composition parameter comprises a current copper ion concentration value, a current hydrogen peroxide concentration ratio and a current sulfuric acid concentration ratio.

3. The method of claim 2, wherein the step of monitoring the surface microetching of the circuit board is performed by using a camera. When S102 is executed, the following steps are specifically included: According to the current copper ion parameter value, a difference value between the current hydrogen peroxide concentration ratio and a preset hydrogen peroxide concentration upper limit value is calculated, which is recorded as a first ratio difference value; A second ratio difference value between the current sulfuric acid concentration ratio and a preset sulfuric acid concentration upper limit value is calculated.

4. The method of claim 3, wherein the step of monitoring the surface microetching of the circuit board is performed by using a camera. When S103 is executed, the following steps are specifically included: Detection of whether the first ratio difference value is less than a preset hydrogen peroxide concentration lower limit difference value; If the first ratio difference value is less than the preset hydrogen peroxide concentration lower limit difference value, a first increment signal is sent to the circuit board surface micro-etchant management system to increase the percentage of hydrogen peroxide in the circuit board surface micro-etchant.

5. The method of claim 4, wherein the step of monitoring the surface microetching of the circuit board is performed by using a camera. After the detection of whether the first ratio difference value is less than the preset hydrogen peroxide concentration lower limit difference value, the following steps are further included: If the first ratio difference value is greater than or equal to the preset hydrogen peroxide concentration lower limit difference value and the first ratio difference value is less than a hydrogen peroxide concentration upper limit critical difference value, detection is performed on whether the second ratio difference value is less than a preset sulfuric acid concentration lower limit difference value; If the second ratio difference value is less than the preset sulfuric acid concentration lower limit difference value, a second increment signal is sent to the circuit board surface micro-etchant management system to increase the percentage of sulfuric acid in the circuit board surface micro-etchant.

6. The circuit board surface micro-etching monitoring method according to claim 1, characterized in that: After S101 is executed and before S102 is executed, the following steps are included: Detection of whether the current copper ion parameter is greater than or equal to a copper ion critical region parameter; If the current copper ion parameter is greater than or equal to the copper ion critical region parameter, a monitoring stop signal is sent to the circuit board surface micro-etchant management system.

7. The method of claim 6, wherein the step of monitoring the surface microetching of the circuit board is performed by using a camera. After the detection of whether the current copper ion parameter is greater than or equal to the copper ion critical region parameter, the following steps are further included: If the current copper ion parameter is less than the copper ion critical region parameter, S102 is executed.

8. A line board surface micro-etching monitoring device, characterized by, The method comprises: A micro-etchant acquisition module for real-time acquisition of a current circuit board surface micro-etchant composition parameter, wherein the composition parameter comprises a current copper ion parameter, a current hydrogen peroxide parameter and a current sulfuric acid parameter; A difference calculation module is configured to calculate a first concentration difference by subtracting a preset hydrogen peroxide parameter from the current hydrogen peroxide parameter according to the current copper ion parameter, and calculate a second concentration difference by subtracting a preset sulfuric acid parameter from the current sulfuric acid parameter. A difference compensation output module is configured to send a micro-etching compensation signal to a circuit board surface micro-etching agent management system according to the first concentration difference and / or the second concentration difference, so as to adjust a component parameter of the circuit board surface micro-etching agent. 9.A computer device, comprising a memory and a processor, wherein the memory stores a computer program, and the computer device is configured to perform the method according to any one of claims 1-8 when the computer program is executed by the processor. The processor executes the computer program to implement the steps of the method in any one of claims 1 to 7.

10. A readable storage medium, having stored thereon a computer program, characterized in that, The computer program is executed by the processor to implement the steps of the method in any one of claims 1 to 7.

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