Rapid UV test method for solar cell
By conducting minority carrier lifetime and light-induced open-circuit voltage tests on semi-finished batteries after front and back coatings have been applied, and combining ultraviolet light irradiation and photoluminescence imaging, the accuracy problem of traditional UV decay testing has been solved, enabling accurate evaluation of passivation layer performance and improvement of battery quality.
Patent Information
- Application Number
- CN202510760309.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-06-09
- Publication Date
- 2025-10-24
AI Technical Summary
When traditional UV degradation testing is conducted at the finished cell or module stage, metal contact oxidation interference and module-level testing are affected by multiple factors, making it difficult to accurately assess the passivation layer performance.
Semi-finished batteries with front and back films coated were used as test samples. Initial minority carrier lifetime and open-circuit voltage under illumination were measured using a minority carrier lifetime tester. The minority carrier lifetime and open-circuit voltage under illumination were calculated by irradiating with an ultraviolet light source and monitoring the temperature. The decay distribution was analyzed by combining photoluminescence imaging.
It enables accurate assessment of UV decay in the passivation layer, avoids the influence of metallized gate lines, improves test accuracy and battery quality, and supports timely adjustments to the production process.
Smart Images
Figure CN120834028A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the field of crystalline silicon solar cells, in particular to a rapid UV test method for solar cell wafers. BACKGROUND
[0002] In photovoltaic cell manufacturing, the UV stability of passivation layers (such as Al2O3 / SiN X stacks) is a key factor affecting the long-term reliability of the cells. Traditional UV decay tests are usually performed at the cell or module finished product stage, but there are the following problems:
[0003] Metal contact oxidation interference: metal grid lines (such as Ag) are easily oxidized under UV irradiation, affecting the true evaluation of passivation layer decay.
[0004] Cell and module data mismatch: module-level testing is disturbed by multiple factors such as packaging materials, thermal stress, etc., making it difficult to directly correlate passivation layer performance. SUMMARY
[0005] The present application provides a rapid UV test method for solar cell wafers to solve the problems raised in the background art.
[0006] A rapid UV test method for solar cell wafers, comprising:
[0007] S1: selecting a semi-finished product cell after plating front and back films as a test sample, using a minority carrier lifetime tester to test the test sample to obtain initial minority carrier lifetime and initial light open circuit voltage value;
[0008] S2: using an ultraviolet light source to irradiate the test sample and monitoring the temperature value of the test sample during irradiation;
[0009] S3: using a minority carrier lifetime tester to test the irradiated test sample to obtain current minority carrier lifetime and current light open circuit voltage value;
[0010] S4: calculating the minority carrier lifetime decay rate based on the initial minority carrier lifetime and the current minority carrier lifetime, and calculating the light open circuit voltage decay rate based on the initial light open circuit voltage value and the current light open circuit voltage value.
[0011] Preferably, in S1, the test sample is tested using a minority carrier lifetime tester to obtain initial minority carrier lifetime and initial light open circuit voltage value, comprising:
[0012] Using a minority carrier lifetime tester to test the passivation layer in the test sample multiple times to obtain a sequence of minority carrier lifetimes and a sequence of light open circuit voltage values;
[0013] Taking the average value of the sequence of the minority carrier lifetime as the initial minority carrier lifetime, and taking the average value of the sequence of the light open circuit voltage value as the initial light open circuit voltage value.
[0014] Preferably, in the S2, the ultraviolet light source is a 310 nm LED array or an excimer lamp.
[0015] Preferably, in the S2, the irradiation of the test sample by the ultraviolet light source comprises:
[0016] The ultraviolet light source is controlled to have a light intensity of 100 mW / cm 2 at a distance of 10 cm from the test sample, and continuously irradiate for 1 hour.
[0017] Preferably, in the S2, the temperature value of the test sample during irradiation is monitored, comprising:
[0018] The temperature of the test sample during irradiation is monitored by a temperature sensor to obtain a real-time temperature value, and it is determined whether the real-time temperature value is less than a preset temperature value;
[0019] If yes, it is determined that the irradiation process is normal;
[0020] Otherwise, it is determined that the irradiation process is abnormal, and a warning is given.
[0021] Preferably, in the S3, the irradiated test sample is tested by a minority carrier lifetime tester to obtain a current minority carrier lifetime and a current light open circuit voltage value, comprising:
[0022] The irradiated test sample is continuously tested by the minority carrier lifetime tester at a preset test frequency until the error between the preset number of minority carrier lifetimes continuously collected is within a preset lifetime error, and the error between the preset number of light open circuit voltage values continuously collected is within a preset voltage error, and the last sequentially tested minority carrier lifetime and light open circuit voltage value are taken as the current minority carrier lifetime and the current light open circuit voltage value, respectively.
[0023] Preferably, in the S4, the minority carrier lifetime decay rate is calculated based on the initial minority carrier lifetime and the current minority carrier lifetime, comprising:
[0024] The minority carrier lifetime decay rate calculation formula is as follows:
[0025]
[0026] Wherein, L represents the minority carrier lifetime decay rate, τ0 represents the initial minority carrier lifetime, and τ1 represents the current minority carrier lifetime.
[0027] Preferably, in the S4, the light open circuit voltage decay rate is calculated based on the initial light open circuit voltage value and the current light open circuit voltage value, comprising:
[0028]
[0029] Wherein, V represents the illumination open-circuit voltage decay rate, Voc0 represents the initial illumination open-circuit voltage value, and Voc1 represents the current illumination open-circuit voltage value.
[0030] Preferably, based on the minority carrier lifetime decay rate and the illumination open-circuit voltage decay rate, in combination with the contrast of photoluminescence imaging before and after irradiation, the decay evaluation result of the test sample is determined, including:
[0031] The photoluminescence imaging of the test sample before irradiation is performed to obtain an initial multi-color display image, and based on the relationship between the color and the film layer performance characteristics, the initial topographic distribution information of the test sample is determined.
[0032] The photoluminescence imaging of the test sample after irradiation is performed to obtain a current multi-color display image, and based on the relationship between the color and the film layer performance characteristics, the current topographic distribution information of the test sample is determined.
[0033] Based on the distribution lateral performance difference of the initial topographic distribution information, the lateral decay distribution weight of the test sample is determined, and based on the distribution longitudinal performance difference between the initial topographic distribution information and the current topographic distribution information, the longitudinal decay distribution weight of the test sample is determined.
[0034] Based on the lateral decay distribution weight and the longitudinal decay distribution weight, the standard decay evaluation is weighted and processed to obtain the corresponding specific decay evaluation standard of different regions of the test sample.
[0035] It is judged whether the minority carrier lifetime decay rate and the illumination open-circuit voltage decay rate of each region of the test sample meet the corresponding specific decay evaluation standard.
[0036] If yes, the spatial decay uniformity index of each region of the test sample is determined, and it is judged whether the spatial decay uniformity index meets the preset uniformity requirement, if yes, it is determined that the decay test of the test sample meets the standard, otherwise, it is determined that the decay test of the test sample does not meet the standard.
[0037] Otherwise, it is determined that the decay test of the test sample does not meet the standard.
[0038] Compared with the prior art, the present application has the following beneficial effects:
[0039] By selecting the semi-finished battery after plating the front and back films as a test sample, the test sample is tested by using a minority carrier lifetime tester, initial minority carrier lifetime and initial light open circuit voltage values are obtained, the influence of the grid line after metallization on the attenuation is avoided, the accuracy of the test is improved, the test sample is irradiated by using an ultraviolet light source, and the temperature value of the test sample during irradiation is monitored, the test sample after irradiation is tested by using the minority carrier lifetime tester, the current minority carrier lifetime and the current light open circuit voltage value are obtained, the passivation layer of the battery can be targetedly influenced, the accuracy of the test is improved, the minority carrier lifetime decay rate is calculated based on the initial minority carrier lifetime and the current minority carrier lifetime, the light open circuit voltage decay rate is calculated based on the initial light open circuit voltage value and the current light open circuit voltage value, the attenuation of the UV is realized online and quickly tested, and timely adjustment of the production process is helpful to improve the quality and performance of the battery.
[0040] Other features and advantages of the present application will be set forth in the following description, and in part will become apparent to those skilled in the art from the description, or can be learned by practice of the application. The objects and other advantages of the present application can be realized and attained by the structure particularly pointed out in the written description and claims hereof.
[0041] The technical solutions of the present application will be further described in detail below with the help of the drawings and examples. BRIEF DESCRIPTION OF DRAWINGS
[0042] The accompanying drawings are included to provide a further understanding of the present application, and constitute a part of the specification, together with the embodiments of the present application, to explain the present application, and do not constitute a limitation on the present application. In the drawings:
[0043] Figure 1 A flowchart of a rapid UV test method for a solar cell wafer in an embodiment of the present application is shown.
[0044] Figure 2 A flowchart of obtaining initial minority carrier lifetime and initial light open circuit voltage values in an embodiment of the present application is shown.
[0045] Figure 3 A flowchart of obtaining current minority carrier lifetime and current light open circuit voltage values in an embodiment of the present application is shown. DETAILED DESCRIPTION
[0046] The preferred embodiments of the present application will be described below in conjunction with the accompanying drawings, and it should be understood that the preferred embodiments described herein are only used to explain and illustrate the present application, and do not constitute a limitation on the present application.
[0047] Example 1:
[0048] An embodiment of the present application provides a rapid UV test method for a solar cell wafer, as shown in Figure 1 .
[0049] S1: select the semi-finished battery after plating the front and back films as a test sample, test the test sample using a minority carrier lifetime tester to obtain an initial minority carrier lifetime and an initial light open-circuit voltage value;
[0050] S2: irradiate the test sample using an ultraviolet light source and monitor the temperature value of the test sample during irradiation;
[0051] S3: test the irradiated test sample using a minority carrier lifetime tester to obtain a current minority carrier lifetime and a current light open-circuit voltage value;
[0052] S4: calculate the minority carrier lifetime decay rate based on the initial minority carrier lifetime and the current minority carrier lifetime, and calculate the light open-circuit voltage decay rate based on the initial light open-circuit voltage value and the current light open-circuit voltage value.
[0053] In this embodiment, the test sample is obtained by skipping printing after completing the front and back films according to the normal battery process and directly passing through a sintering process once.
[0054] In this embodiment, the semi-finished battery after plating the front and back films is selected as the test sample to avoid the influence of the grid lines after metallization on the decay and improve the accuracy of the test.
[0055] In this embodiment, the minority carrier lifetime is tested using a minority carrier lifetime tester, and the comparison of the light open-circuit voltage values can directly reflect the changes in the passivation layer before and after the decay, providing a reliable basis for evaluating the UV decay.
[0056] The beneficial effects of the above design scheme are: by selecting the semi-finished battery after plating the front and back films as a test sample, testing the test sample using a minority carrier lifetime tester to obtain an initial minority carrier lifetime and an initial light open-circuit voltage value, avoiding the influence of the grid lines after metallization on the decay and improving the accuracy of the test, irradiating the test sample using an ultraviolet light source and monitoring the temperature value of the test sample during irradiation, testing the irradiated test sample using a minority carrier lifetime tester to obtain a current minority carrier lifetime and a current light open-circuit voltage value, which can specifically affect the passivation layer of the battery, improve the accuracy of the test, calculate the minority carrier lifetime decay rate based on the initial minority carrier lifetime and the current minority carrier lifetime, and calculate the light open-circuit voltage decay rate based on the initial light open-circuit voltage value and the current light open-circuit voltage value, to realize online rapid testing of the decay of UV, which is helpful for timely adjusting the production process and improving the quality and performance of the battery.
[0057] Embodiment 2:
[0058] Based on the basis of embodiment 1, the present embodiment provides a rapid UV test method for a solar cell, as Figure 2As shown, in the S1, the test sample is tested by using a minority carrier lifetime tester to obtain an initial minority carrier lifetime and an initial light open circuit voltage value, including:
[0059] The passivation layer in the test sample is tested multiple times by using the minority carrier lifetime tester to obtain a minority carrier lifetime sequence and a light open circuit voltage value sequence.
[0060] The average value of the minority carrier lifetime sequence is taken as the initial minority carrier lifetime, and the average value of the light open circuit voltage value sequence is taken as the initial light open circuit voltage value.
[0061] The beneficial effects of the above design scheme are that the average value obtained through multiple measurements is taken as the initial minority carrier lifetime and the initial light open circuit voltage value, thereby ensuring the test accuracy of the test sample before irradiation.
[0062] Embodiment 3:
[0063] Based on the basis of Embodiment 1, the present embodiment provides a rapid UV test method for a solar cell piece, in the S2, the ultraviolet light source is a 310 nm LED array or an excimer lamp.
[0064] In this embodiment, the Si-H bond energy in the passivation layer of the test sample is 3.0-3.5 eV, and the photon energy corresponding to the 310 nm ultraviolet light is 4.0 eV, which can effectively destroy the Si-H bond, simulate the chemical passivation failure in the real environment, and select 310 nm instead of a shorter wavelength (such as 254 nm) to avoid excessive excitation of non-target bonds (such as Al-O bonds) and improve the test specificity.
[0065] The beneficial effects of the above design scheme are that the ultraviolet light source is selected as a 310 nm LED array or an excimer lamp, and 310 nm is selected instead of a shorter wavelength to avoid excessive excitation of non-target bonds and improve the test specificity.
[0066] Embodiment 4:
[0067] Based on the basis of Embodiment 1, the present embodiment provides a rapid UV test method for a solar cell piece, in the S2, the test sample is irradiated by using an ultraviolet light source, including:
[0068] The ultraviolet light source is used at a position 10 cm away from the test sample to control the light intensity to be 100 mW / cm 2 , and the irradiation is continued for 1 hour.
[0069] The beneficial effects of the above design scheme are that the ultraviolet light source is used at a position 10 cm away from the test sample to control the light intensity to be 100 mW / cm 2 , and the irradiation is continued for 1 hour, thereby realizing accurate testing of the test sample and ensuring the test accuracy from the test operation process.
[0070] Example 5:
[0071] Based on Example 1, the present invention provides a rapid UV testing method for solar cells. In S2, monitoring the temperature of the test sample during the irradiation process includes:
[0072] Using a temperature sensor to monitor the temperature of the test sample during the irradiation process, obtaining a real-time temperature value, and determining whether the real-time temperature value is less than a preset temperature value;
[0073] If so, confirm that the irradiation process is normal;
[0074] Otherwise, the irradiation process is determined to be abnormal and an early warning reminder is issued.
[0075] In this embodiment, the preset temperature value is set to 50°C.
[0076] The beneficial effects of the above design scheme are: ensuring that the temperature of the test sample is within the preset temperature through real-time temperature monitoring, ensuring the reasonable compliance of the test process from the temperature factor, and improving the test accuracy.
[0077] Example 6:
[0078] Based on Example 1, the present invention provides a rapid UV testing method for solar cells, such as Figure 3 As shown, in S3, the irradiated test sample is tested using a minority carrier lifetime tester to obtain the current minority carrier lifetime and the current illumination open circuit voltage value, including:
[0079] The irradiated test sample is continuously tested using a minority carrier lifetime tester according to a preset test frequency until the error between the preset number of minority carrier lifetimes continuously collected is within the preset lifetime error, and the error between the preset number of illumination open-circuit voltage values continuously collected is within the preset voltage error. The minority carrier lifetime and illumination open-circuit voltage values finally obtained by the tests are taken as the current minority carrier lifetime and the current illumination open-circuit voltage values, respectively.
[0080] The beneficial effect of the above design scheme is that the current minority carrier lifetime and the current illumination open-circuit voltage value are obtained by continuous acquisition until the acquired data is determined to be stable, thereby ensuring the accuracy of the test results.
[0081] Example 7:
[0082] Based on Example 1, the present invention provides a rapid UV testing method for solar cells. In S4, the minority carrier lifetime decay rate is calculated based on the initial minority carrier lifetime and the current minority carrier lifetime, including:
[0083] The formula for calculating the minority carrier lifetime decay rate is as follows:
[0084]
[0085] Wherein, L represents the minority carrier lifetime decay rate, τ0 represents the initial minority carrier lifetime, and τ1 represents the current minority carrier lifetime.
[0086] The beneficial effects of the above design scheme are: through the calculation of the minority carrier lifetime decay rate, data basis is provided for battery decay evaluation.
[0087] Embodiment 8:
[0088] Based on the basis of embodiment 1, the embodiment of the application provides a rapid UV test method for a solar cell piece, in which, the illumination open circuit voltage decay rate is calculated based on the initial illumination open circuit voltage value and the current illumination open circuit voltage value, comprising:
[0089]
[0090] Wherein, V represents the illumination open circuit voltage decay rate, Voc0 represents the initial illumination open circuit voltage value, and Voc1 represents the current illumination open circuit voltage value.
[0091] The beneficial effects of the above design scheme are: through the calculation of the illumination open circuit voltage decay rate, data basis is provided for battery decay evaluation.
[0092] Embodiment 9:
[0093] Based on the basis of embodiment 1, the embodiment of the application provides a rapid UV test method for a solar cell piece, based on the minority carrier lifetime decay rate and the illumination open circuit voltage decay rate, combined with the comparison of photoluminescence imaging before and after irradiation, the decay evaluation result of the test sample is determined, comprising:
[0094] Photoluminescence imaging is performed on the test sample before irradiation to obtain an initial multicolor display image, and based on the relationship between color and film layer performance characteristics, the initial topographic distribution information of the test sample is determined;
[0095] Photoluminescence imaging is performed on the test sample after irradiation to obtain a current multicolor display image, and based on the relationship between color and film layer performance characteristics, the current topographic distribution information of the test sample is determined;
[0096] Based on the distribution transverse performance difference of the initial topographic distribution information, the transverse decay distribution weight of the test sample is determined, and based on the distribution longitudinal performance difference between the initial topographic distribution information and the current topographic distribution information, the longitudinal decay distribution weight of the test sample is determined;
[0097] The standard attenuation evaluation is weighted based on the transverse attenuation distribution weight and the longitudinal attenuation distribution weight to obtain a corresponding specific attenuation evaluation standard of different regions of the test sample;
[0098] It is determined whether the minority carrier lifetime attenuation rate and the light open-circuit voltage attenuation rate of each region of the test sample meet the corresponding specific attenuation evaluation standard.
[0099] If yes, a spatial attenuation uniformity index of each region of the test sample is determined, and it is determined whether the spatial attenuation uniformity index meets a preset uniformity requirement. If yes, it is determined that the attenuation test of the test sample is qualified, otherwise, it is determined that the attenuation test of the test sample is unqualified.
[0100] Otherwise, it is determined that the attenuation test of the test sample is unqualified.
[0101] In this embodiment, the topography distribution information includes film thickness, impurity enrichment, etc. The corresponding attenuation evaluation standard is designed for the region of different thickness to obtain the impurity distribution, so that the evaluation is more specific and more accurate.
[0102] In this embodiment, the multi-color display such as different color PL intensity gradient through photoluminescence imaging can intuitively identify the attenuation difference of the micron-level region such as film thickness unevenness, pinhole defect or impurity enrichment area. Compared with the traditional overall average test, the spatial resolution is improved to 10 μm level.
[0103] In this embodiment, based on the initial topography difference of the same sample at different positions, such as center-edge, the contribution of process uniformity to attenuation is quantified. Specifically, the attenuation weight of the edge film-thin area is improved by 30%.
[0104] In this embodiment, the topography change of the same position before and after irradiation is compared to distinguish UV-induced damage and inherent defects. For example, if the longitudinal attenuation weight of a certain region is greater than 70%, it is determined as UV-sensitive failure.
[0105] In this embodiment, for the attenuation of the center region (transverse weight 0.6) caused by material intrinsic defects, the allowable threshold can be relaxed to 1.2 times of the standard value; while the same degree of attenuation of the edge region (transverse weight 1.4) is determined as unqualified, which is more consistent with the actual risk distribution of mass production process.
[0106] In this embodiment, the weight calculation and photoluminescence image analysis can be determined based on a machine learning model.
[0107] The beneficial effects of the above design scheme are: by introducing photoluminescence imaging analysis and spatial decay distribution weight, the accuracy and process guidance value of the UV decay test are significantly improved, the technical bottleneck of traditional UV decay test overall averaging is broken through, the upgrade from performance qualification judgment to defect mechanism analysis and process optimization guidance is realized, and finally the accuracy and efficiency of test evaluation are improved.
[0108] Obviously, those skilled in the art can make various modifications and variations to the present application without departing from the spirit and scope of the present application. Thus, if these modifications and variations of the present application belong to the scope of the present application and its equivalent technologies, the present application also intends to include these modifications and variations.
Claims
1. A method for rapid UV testing of solar cells, characterized in that, The method comprises the following steps: S1: select a semi-finished battery plated with front and back films as a test sample, test the test sample by using a minority carrier lifetime tester to obtain an initial minority carrier lifetime and an initial light open circuit voltage value; S2: irradiate the test sample by using an ultraviolet light source and monitor the temperature value of the test sample during irradiation; S3: test the test sample after irradiation by using the minority carrier lifetime tester to obtain a current minority carrier lifetime and a current light open circuit voltage value; S4: calculate a minority carrier lifetime decay rate based on the initial minority carrier lifetime and the current minority carrier lifetime, and calculate a light open circuit voltage decay rate based on the initial light open circuit voltage value and the current light open circuit voltage value.
2. The method for rapid UV test of solar cell according to claim 1, characterized in that, In the S1, the test sample is tested by using the minority carrier lifetime tester to obtain the initial minority carrier lifetime and the initial light open circuit voltage value, which comprises the following steps: The passivation layer in the test sample is tested by using the minority carrier lifetime tester for multiple times to obtain a minority carrier lifetime sequence and a light open circuit voltage value sequence; The average value of the minority carrier lifetime sequence is taken as the initial minority carrier lifetime, and the average value of the light open circuit voltage value sequence is taken as the initial light open circuit voltage value.
3. The method for rapid UV test of solar cell according to claim 1, characterized in that, In the S2, the ultraviolet light source is a 310 nm LED array or an excilamp.
4. The method for rapid UV test of solar cell according to claim 1, characterized in that, In the S2, the test sample is irradiated by using the ultraviolet light source, which comprises the following steps: The test sample was irradiated with UV light at a distance of 10 cm from the test sample, with a light intensity of 100 mW / cm controlled for 1 hour. 2 , for 1 hour.
5. The method of claim 1, wherein the method is a rapid UV test method for solar cells. In the S2, the temperature value of the test sample during irradiation is monitored, which comprises the following steps: The temperature of the test sample during irradiation is monitored by using a temperature sensor to obtain a real-time temperature value, and it is judged whether the real-time temperature value is less than a preset temperature value; If yes, it is determined that the irradiation process is normal; otherwise, it is determined that the irradiation process is abnormal, and a warning is given.
6. The method of claim 1, wherein the method is a rapid UV test method for solar cells. In the S3, the test sample after irradiation is tested by using the minority carrier lifetime tester to obtain the current minority carrier lifetime and the current light open circuit voltage value, which comprises the following steps: The test sample after irradiation is continuously tested by using the minority carrier lifetime tester at a preset test frequency until the error between a preset number of minority carrier lifetimes continuously collected is within a preset lifetime error, and the error between a preset number of light open circuit voltage values continuously collected is within a preset voltage error, and the last minority carrier lifetime and light open circuit voltage value tested in turn are taken as the current minority carrier lifetime and the current light open circuit voltage value, respectively.
7. The method of claim 1, wherein the method is a rapid UV test method for solar cells. In the S4, the minority carrier lifetime decay rate is calculated based on the initial minority carrier lifetime and the current minority carrier lifetime, which comprises the following steps: The minority carrier lifetime decay rate calculation formula is as follows: Wherein, L represents the minority carrier lifetime decay rate, τ0 represents the initial minority carrier lifetime, and τ1 represents the current minority carrier lifetime.
8. The method of claim 1, wherein the method is a rapid UV test method for solar cells. In the S4, the light open circuit voltage decay rate is calculated based on the initial light open circuit voltage value and the current light open circuit voltage value, which comprises the following steps: wherein V represents the illumination open circuit voltage decay rate, represents the initial illumination open circuit voltage value, represents the current illumination open circuit voltage value.
9. The method of claim 1, wherein the method is a rapid UV test method for solar cells. Based on the minority carrier lifetime decay rate and the light open circuit voltage decay rate, the contrast of photoluminescence imaging is used to determine the decay evaluation result of the test sample, which comprises the following steps: Photoluminescence imaging is performed on the test sample before irradiation to obtain an initial multi-color display image, and the initial topographic distribution information of the test sample is determined based on the relationship between color and film layer performance characteristics; The test sample is subjected to photoluminescence imaging after irradiation to obtain a current multicolor display image, and based on the relationship between the color and the film layer performance characteristics, the current topography distribution information of the test sample is determined; based on the distribution transverse performance difference of the initial topography distribution information, the transverse attenuation distribution weight of the test sample is determined, and based on the distribution longitudinal performance difference of the initial topography distribution information and the current topography distribution information, the longitudinal attenuation distribution weight of the test sample is determined; based on the transverse attenuation distribution weight and the longitudinal attenuation distribution weight, the standard attenuation evaluation is weighted to obtain the corresponding specific attenuation evaluation standard of different regions of the test sample; determine whether the minority carrier lifetime decay rate and the light open-circuit voltage decay rate of each region of the test sample meet the corresponding specific attenuation evaluation standard; if yes, determine the spatial attenuation uniformity index of each region of the test sample, and determine whether the spatial attenuation uniformity index meets the preset uniformity requirement, if yes, determine that the attenuation test of the test sample meets the standard, otherwise, determine that the attenuation test of the test sample does not meet the standard; otherwise, it is determined that the attenuation test of the test sample does not meet the standard.