Side wiring manufacturing method of double-sided circuit substrate

Abstract

The invention relates to a side edge wiring manufacturing method of a double-sided circuit substrate, which mainly comprises the following steps of: forming a side edge circuit substrate layer on the side edge surface of a provided double-sided circuit substrate, and forming side edge wiring for connecting an upper main circuit substrate layer and a lower main circuit substrate layer on the upper surface and the lower surface of the double-sided circuit substrate by laser processing. The problems that an existing double-sided circuit substrate is complex in manufacturing procedure and consumes energy when side wiring is formed through an etching means are solved, waste pollution can be effectively reduced, the manufacturing efficiency can be improved, and ESG standards of environmental protection, energy conservation, carbon reduction and the like are met.

Description

TECHNICAL FIELD

[0001] The present application relates to a manufacturing method for a double-sided circuit substrate, and in particular to a manufacturing method capable of forming a side edge wiring connecting the upper and lower main circuit substrate layers on the side edge surface of the double-sided circuit substrate. BACKGROUND

[0002] In the prior art manufacturing method of the double-sided circuit substrate, in order to enable the circuits on the upper and lower surfaces of the substrate to be connected, in addition to using a via technology to connect the upper and lower circuits in the substrate, there is also the "substrate side surface wiring forming method" disclosed in Taiwan Patent No. I732530, which mainly forms a side edge wiring metal layer on the side surface of the substrate by evaporation, then forms a photoresist layer on the side edge wiring metal layer, aligns a mask on the photoresist layer, and then performs exposure and development to form a photoresist pattern exposed to a portion of the side surface wiring metal layer, and then etches and removes a portion of the exposed side surface wiring metal layer, and then peels off the photoresist pattern remaining on the side surface wiring metal layer to form a side surface circuit pattern.

[0003] In recent years, in response to climate change and other issues, countries around the world have set net zero carbon emissions as a key policy goal. In addition to the process of developing towards higher value, the circuit substrate industry must also cooperate with ESG (Environment, Social Responsibility, and Governance) sustainable development, and transform towards green energy, circular economy, and other directions, actively introduce energy-saving and carbon-reducing ideas, in order to maintain the competitiveness of the industry. Therefore, how to achieve the goal of energy saving and carbon reduction is an important issue in the current research and development of circuit substrates.

[0004] Based on the aforementioned goal of net zero carbon emissions, in the aforementioned prior art manufacturing method of the double-sided circuit substrate, the "substrate side surface wiring forming method" can provide a side surface wiring connecting the upper and lower double-sided circuits on the side surface of the double-sided circuit substrate, but this substrate side surface wiring forming method still has the following problems:

[0005] 1. Complex process steps and generation of polluting waste: The existing substrate side surface wiring forming method forms a side edge wiring metal layer on the side surface of the substrate by evaporation, then forms a photoresist layer on the side edge wiring metal layer, aligns a mask on the photoresist layer, and then performs exposure and development, and then performs chemical etching to form a side surface circuit pattern. The process steps are complex and energy-consuming. On the other hand, the steps related to the formation of the side surface circuit pattern by chemical etching require the use of a large amount of consumables and energy, and generate a large amount of polluting waste, which has a negative impact on the environment, and the burden of environmental maintenance is large, making it difficult to meet the ESG standards.

[0006] 2. Poor manufacturing efficiency: As mentioned above, the existing substrate side surface portion wiring forming method is to form a side edge wiring metal layer on the side surface portion of the substrate by evaporation, and then sequentially form a photoresist layer on the side edge wiring metal layer. After aligning and configuring a mask on the photoresist layer and exposing and developing, etching is performed to form a side surface portion circuit pattern. The process steps are complex, the entire process is time-consuming, and the manufacturing efficiency is poor.

[0007] 3. Unstable product quality: As mentioned above, the existing substrate side surface portion wiring forming method is to form a side surface portion circuit pattern by etching. Since the chemical etching method is a non-isotropic removal of part of the side edge wiring metal layer, it is difficult to control the predetermined etching part, and it is easy to form a concave on the inside of the side surface portion circuit pattern, etc. The variation of the line width dimension of the side surface wiring pattern and the line spacing in each side surface wiring pattern is large, which leads to the problem of unstable quality of the product completed by the side surface wiring method of the double-sided circuit substrate.

[0008] 4. High manufacturing cost: As mentioned above, the existing substrate side surface portion wiring forming method is to form a side edge wiring metal layer on the side surface portion of the substrate by evaporation, and then sequentially form a photoresist layer on the side edge wiring metal layer. After aligning and configuring a mask on the photoresist layer and exposing and developing, etching is performed to form a side surface portion circuit pattern. In order to meet the needs of different products, a special mask with a specific circuit pattern must be designed and manufactured to cooperate with the etching step. Due to the precision requirement of the mask, the cost is high, which leads to high overall manufacturing cost. SUMMARY

[0009] The technical problem to be solved by the present application is to solve the technical problems of complex process steps, energy consumption and environmental pollution in forming a side surface portion circuit pattern by etching means for the existing double-sided circuit substrate.

[0010] The technical solution provided by the present application is to provide a side edge wiring method for a double-sided circuit substrate, which comprises:

[0011] The step of providing a double-sided circuit substrate includes a substrate body and an upper main circuit substrate layer and a lower main circuit substrate layer formed on the upper surface and the lower surface of the substrate body, respectively;

[0012] The step of forming a side edge circuit substrate layer is to form a side edge circuit substrate layer on at least one side surface between the upper and lower surfaces of the double-sided circuit substrate, and the side edge circuit substrate layer connects the upper main circuit substrate layer and the lower main circuit substrate layer; and

[0013] The step of laser processing to form a side edge wiring is to remove part of the side edge circuit substrate layer of the double-sided circuit substrate by laser at a predetermined position, and to form at least one side edge wiring connecting the upper main circuit substrate layer and the lower main circuit substrate layer.

[0014] In the method of manufacturing the side edge wiring of the double-sided circuit substrate as described above, in the step of forming the side edge wiring by laser processing, at least one laser source is used, and the laser source is driven by a controlled driving mechanism to move in three-dimensional space to perform the step of forming the side edge wiring.

[0015] In the method of manufacturing the side edge wiring of the double-sided circuit substrate as described above, in the step of forming the side edge wiring by laser processing, at least one laser source is used, and the laser source is driven by a controlled driving mechanism to move in three-dimensional space to perform the step of forming the side edge wiring.

[0016] In the method of manufacturing the side edge wiring of the double-sided circuit substrate as described above, in the step of forming the side edge wiring by laser processing, at least one laser source is used, and the laser source is driven by a controlled driving mechanism to move in three-dimensional space to perform the step of forming the side edge wiring.

[0017] In the method of manufacturing the side edge wiring of the double-sided circuit substrate as described above, in the step of forming the side edge wiring by laser processing, at least one laser source is used, and the laser source is driven by a controlled driving mechanism to move in three-dimensional space to perform the step of forming the side edge wiring.

[0018] In the method of manufacturing the side edge wiring of the double-sided circuit substrate as described above, in the step of forming the side edge wiring by laser processing, at least one laser source is used, and the laser source is driven by a controlled driving mechanism to move in three-dimensional space to perform the step of forming the side edge wiring.

[0019] In the method of manufacturing the side edge wiring of the double-sided circuit substrate as described above, in the step of forming the side edge wiring by laser processing, at least one laser source is used, and the laser source is driven by a controlled driving mechanism to move in three-dimensional space to perform the step of forming the side edge wiring.

[0020] In the method of manufacturing the side edge wiring of the double-sided circuit substrate as described above, in the step of forming the side edge wiring by laser processing, at least one laser source is used, and the laser source is driven by a controlled driving mechanism to move in three-dimensional space to perform the step of forming the side edge wiring.

[0021] The beneficial effects achieved by the present application are as follows:

[0022] 1. Energy saving and reducing environmental pollution: The present application is to form a side edge circuit substrate layer on the side edge surface of a double-sided circuit substrate, and then use laser to process the side edge circuit substrate layer to form a side edge wiring connecting the upper main circuit substrate layer and the lower main circuit substrate layer on the upper and lower surfaces of the double-sided circuit substrate. In this way, the problems of complex manufacturing process and waste generated by etching step of the existing double-sided circuit substrate are solved, so that the present application can achieve energy saving, avoid environmental pollution, and meet the specifications of ESG.

[0023] 2. Simplify process steps and improve manufacturing efficiency: As described above, the present application forms a side edge circuit substrate layer on the side edge surface of a double-sided circuit substrate, and then uses laser to process the side edge circuit substrate layer to form a side edge wiring connecting the upper main circuit substrate layer and the lower main circuit substrate layer on the upper and lower surfaces of the double-sided circuit substrate. In this way, the manufacturing process is simplified, compared with the existing double-sided circuit substrate manufacturing process using etching method to form side edge wiring, which simplifies process steps, shortens process time, and effectively improves process efficiency.

[0024] 3. Improve product quality level: As described above, the present application uses laser processing to form side edge wiring, which can accurately control the projection position of laser emitted by laser source and the depth of laser processing, ensure the uniformity of line spacing between adjacent two side edge wirings and the line width size of side edge wiring, and improve the level of product quality.

[0025] 4. Eliminate the use of mask with circuit pattern and reduce manufacturing cost: As described above, the present application uses laser processing to form side edge wiring, in which the laser source can be precisely controlled by driving mechanism, and the side edge wiring pattern and size data required by different products are set, and then the laser source is driven to form the side edge circuit substrate layer into precise side edge wiring with predetermined pattern and size. Compared with the existing technology of etching step with mask, the present application can eliminate the use of mask with circuit pattern and reduce manufacturing cost.

[0026] In the side edge wiring manufacturing method of the double-sided circuit substrate of the present application, two groups of laser sources arranged in different two axial directions can be further used in the step of laser processing to form side edge wiring, and the two groups of laser sources can be driven by controlled driving mechanism to move in three-dimensional space to perform the step of forming side edge wiring on the side edge circuit substrate layer, which can speed up the processing time of forming three-dimensional space side edge wiring connecting the upper main circuit substrate layer and the lower main circuit substrate layer on the upper and lower surfaces of the double-sided circuit substrate, and improve the process efficiency.

[0027] The side edge wiring method of the double-sided circuit substrate further selects a laser source capable of emitting laser with wavelength of 257nm, so that the laser source is suitable for the substrate body of glass and other light-transmitting materials, and ensures that the laser emitted by the laser source can accurately perform the precise side edge wiring of processing the side edge circuit substrate layer to form a three-dimensional space. BRIEF DESCRIPTION OF DRAWINGS

[0028] Figure 1 is a flow chart of an embodiment of the side edge wiring method of the double-sided circuit substrate.

[0029] Figure 2 is a plan view of an embodiment of the side edge wiring method of the double-sided circuit substrate.

[0030] Figure 3 is a plan view of another perspective of an embodiment of the side edge wiring method of the double-sided circuit substrate.

[0031] Figure 4 is a flow chart of another embodiment of the side edge wiring method of the double-sided circuit substrate.

[0032] BRIEF DESCRIPTION OF DRAWINGS:

[0033] 10: double-sided circuit substrate

[0034] 100: substrate body

[0035] 101: upper main circuit substrate layer

[0036] 1011: upper contact point

[0037] 102: lower main circuit substrate layer

[0038] 1021: lower contact point

[0039] 11: side edge circuit substrate layer

[0040] 12: side edge wiring

[0041] 20: laser DETAILED DESCRIPTION

[0042] The following further describes the technical means adopted by the present application to achieve the predetermined object of the application in combination with the drawings and embodiments of the present application.

[0043] As shown in Figure 1 , an embodiment of the side edge wiring method of the double-sided circuit substrate is disclosed, which includes the steps of providing a double-sided circuit substrate, forming a side edge circuit substrate layer, and laser processing to form a side edge wiring. The content of each step is further described below.

[0044] As Figures 1 to 3 shown, in the step of providing the double-sided circuit substrate 10, the double-sided circuit substrate 10 includes a substrate body 100, and an upper main circuit substrate layer 101 and a lower main circuit substrate layer 102 formed on the upper and lower surfaces of the substrate body 100, respectively. The substrate body 100 of the double-sided circuit substrate 10 is a plate body made of an insulating material, which can be glass or other light-transmitting material, or non-light-transmitting material. The materials of the upper main circuit substrate layer 101 and the lower main circuit substrate layer 102 can be copper, silver, gold or alloys thereof, or other metal materials having electrical conductivity. Basically, the materials of the upper main circuit substrate layer 101 and the lower main circuit substrate layer 102 are mainly selected from copper.

[0045] As Figure 2 and Figure 3 shown, in the step of providing the double-sided circuit substrate 10, the double-sided circuit substrate 10 includes a substrate body 100, and an upper main circuit substrate layer 101 and a lower main circuit substrate layer 102 formed on the upper and lower surfaces of the substrate body 100, respectively. The substrate body 100 of the double-sided circuit substrate 10 is a plate body made of an insulating material, which can be glass or other light-transmitting material, or non-light-transmitting material. The materials of the upper main circuit substrate layer 101 and the lower main circuit substrate layer 102 can be copper, silver, gold or alloys thereof, or other metal materials having electrical conductivity. Basically, the materials of the upper main circuit substrate layer 101 and the lower main circuit substrate layer 102 are mainly selected from copper.

[0046] In this embodiment, the substrate body 100 is rectangular, and has four side surfaces between the upper and lower surfaces. The upper main circuit substrate layer 101 and the lower main circuit substrate layer 102 have a plurality of upper contact points 1011 and a plurality of lower contact points 1021, respectively. The upper contact points 1011 and the lower contact points 1021 are arranged in positions corresponding to the upper and lower sides of one side surface of the substrate body 100, or in positions corresponding to the upper and lower sides of a plurality of side surfaces of the substrate body 100. The positions of the upper contact points 1011 and the lower contact points 1021 are determined according to the wiring requirements of the actual product.

[0047] As Figure 2 and Figure 3As shown, in the step of forming the side edge circuit substrate layer, a side edge circuit substrate layer 11 is formed on at least one side edge surface of the double-sided circuit substrate 10 between the upper and lower surfaces of the substrate body 100, and the side edge circuit substrate layer 11 connects the upper main circuit substrate layer 101 and the lower main circuit substrate layer 102. When the upper main circuit substrate layer 101 and the lower main circuit substrate layer 102 formed on the upper and lower surfaces of the substrate body 100 are metal layers with patterned circuits, in the step of forming the side edge circuit substrate layer 11, the side edge circuit substrate layer 11 connects at least the upper contact point 1011 of the upper main circuit substrate layer 101 and the lower contact point 1021 of the lower main circuit substrate layer 102.

[0048] The material of the side edge circuit substrate layer 11 can be copper, silver, gold or alloys thereof, or other conductive metal materials. Basically, the material of the side edge circuit substrate layer 11 is the same as that of the upper main circuit substrate layer 101 and the lower main circuit substrate layer 102, and copper is mainly selected.

[0049] As shown in Figure 2 and Figure 3 In the foregoing, in the step of forming the side edge circuit substrate layer, the side edge circuit substrate layer 11 is plated on the predetermined side edge surface of the substrate body 100, and the side edge circuit substrate layer 11 connects at least the upper contact point 1011 of the upper main circuit substrate layer 101 and the lower contact point 1021 of the lower main circuit substrate layer 102 on the upper and lower surfaces of the substrate body 100. In this embodiment, the side edge circuit substrate layer 12 can be formed by sputtering, evaporation or other means.

[0050] As shown in Figure 2 and Figure 3 In the step of forming the side edge circuit substrate layer, the side edge circuit substrate layer 11 is plated on the predetermined side edge surface of the substrate body 100, and the side edge circuit substrate layer 11 connects at least the upper contact point 1011 of the upper main circuit substrate layer 101 and the lower contact point 1021 of the lower main circuit substrate layer 102 on the upper and lower surfaces of the substrate body 100. In this embodiment, the side edge circuit substrate layer 12 can be formed by sputtering, evaporation or other means.

[0051] As shown in Figure 2 and Figure 3As shown in the foregoing, in the step of forming the side edge wiring 12 by the laser 20, a set of laser sources or multiple sets of laser sources are used to perform the step, and the laser sources can be driven by a controlled driving mechanism to move in three-dimensional space; or the double-sided circuit substrate 10 can be driven by a controlled driving mechanism to move in three-dimensional space; or both the laser sources and the double-sided circuit substrate 10 can be driven by a controlled driving mechanism to move in three-dimensional space. In the foregoing, the driving mechanism for driving the laser sources or / and the double-sided circuit substrate 10 and the driving method thereof are prior art and will not be described here. Under the precise digital control of the driving mechanism, the side edge wiring pattern and size data set according to the product requirements, the laser sources are driven to form the side edge circuit substrate layer 11 into a precise side edge wiring 12 of a predetermined pattern and size by the laser 20.

[0052] As shown in the foregoing, Figure 2 and Figure 3 In this embodiment, in the step of forming the side edge wiring 12 by the laser 20, two sets of laser sources arranged in different axial directions are used, and the two sets of laser sources can be driven by a controlled driving mechanism to move in three-dimensional space and emit laser 20 to perform the step of forming the side edge wiring 12 from the side edge circuit substrate layer 11.

[0053] When the material of the substrate body 11 of the double-sided circuit substrate 10 is glass or other light-transmitting material, preferably, the laser source emits laser with a wavelength of 257 nm, so that the laser source is suitable for the substrate body 11 of glass and other light-transmitting materials.

[0054] As shown in the foregoing, Figure 2 Figure 3 Figure 4 After the step of forming the side edge wiring 12 by the laser 20, a surface cleaning step can be further included, which is to clean the surface of the double-sided circuit substrate 10 on which the side edge wiring 12 is formed to remove residues generated after the double-sided circuit substrate 10 is processed by the laser 20 to form the side edge wiring 12. The surface cleaning step can use the known surface cleaning method in the process of circuit substrate.

[0055] As can be known from the foregoing description, after the side edge circuit substrate layer is formed on the side edge surface of the double-sided circuit substrate, the side edge wiring connecting the upper main circuit substrate layer and the lower main circuit substrate layer on the upper and lower surfaces of the double-sided circuit substrate is processed by laser. At the same time, by simplifying the process steps, the manufacturing cost is reduced, the manufacturing efficiency is effectively improved, and the line spacing between the two adjacent side edge wirings and the uniformity of the line width size of the side edge wiring in the side edge wiring can be precisely controlled, and the product quality level is improved. In this way, by simplifying the process steps, the present application can achieve energy saving and avoid environmental pollution to meet the ESG specifications.

[0056] The above merely describes the embodiments of the present application, and does not limit the present application in any form. Although the present application has been disclosed as above with the embodiments, it is not intended to limit the present application. Any person skilled in the art can make some changes or modifications to the above disclosed technical contents to obtain equivalent embodiments with equivalent changes, as long as the changes or modifications do not deviate from the technical solution of the present application. Any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present application still belong to the scope of the technical solution of the present application.

Claims

1. A method of forming a side edge wiring of a double-sided wiring substrate, characterized by, It includes: a step of providing a double-sided circuit substrate including a substrate body and an upper main circuit substrate layer and a lower main circuit substrate layer formed on an upper surface and a lower surface of the substrate body, respectively; a step of forming a side circuit substrate layer on at least one side surface of the double-sided circuit substrate between the upper and lower surfaces of the substrate body, the side circuit substrate layer connecting the upper main circuit substrate layer and the lower main circuit substrate layer; and a step of laser processing to form a side wiring by removing a portion of the side circuit substrate layer of the double-sided circuit substrate at a predetermined position. In the step of laser processing to form a side wiring, at least one laser source is used, and the laser source is driven by a controlled driving mechanism to move in a three-dimensional space to perform the step of forming a side wiring.

2. The edge wiring method of a double-sided circuit board according to claim 1, wherein In the step of laser processing to form a side wiring, at least one laser source at a fixed position is selected, and the double-sided circuit substrate is driven by a controlled driving mechanism to move in a three-dimensional space to perform the step of forming a side wiring.

3. The edge wiring method of a double-sided circuit board according to claim 1, wherein In the step of laser processing to form a side wiring, both the laser source and the double-sided circuit substrate are driven by a controlled driving mechanism to move in a three-dimensional space to perform the step of forming a side wiring.

4. The edge wiring method of a double-sided circuit board according to claim 1, wherein In the step of laser processing to form a side wiring, two sets of laser sources arranged in different axial directions are used, and the two sets of laser sources are driven by a controlled driving mechanism to move in a three-dimensional space to perform the step of forming a side wiring.

5. The edge wiring method of a double-sided circuit board according to claim 1, wherein In the step of forming a side circuit substrate layer, the side circuit substrate layer is formed by sputtering.

6. The edge wiring method of a double-sided circuit board according to any one of claims 1 to 5, characterized in that, In the step of providing a double-sided circuit substrate, the substrate body of the double-sided circuit substrate is made of glass; in the step of laser processing to form a side wiring, a laser source that can emit a wavelength of 257 nm is selected.

7. The edge wiring method of a double-sided circuit board according to any one of claims 1 to 5, wherein In the step of providing a double-sided circuit substrate, the substrate body of the double-sided circuit substrate is made of glass; in the step of forming a side circuit substrate layer, the side circuit substrate layer is formed by sputtering; in the step of laser processing to form a side wiring, a laser source that can emit a wavelength of 257 nm is selected.

8. The edge wiring method of a double-sided circuit board according to any one of claims 1 to 5, characterized in that, ​

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