Micro light emitting diode chip

Abstract

The micro light emitting diode structure includes a first type conductive layer, a second type conductive layer stacked on the first type conductive layer, and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light-emitting layer extends along a horizontal plane away from a top edge of the first-type conductive layer and a bottom edge of the second-type conductive layer such that an edge of the light-emitting layer does not contact the top edge of the first-type conductive layer and the bottom edge of the second-type conductive layer. The bottom side of the second type conductive layer is aligned with the top side of the first type conductive layer.

Description

[0001] This application is a divisional application of the application patent application with the application date of December 27, 2021, the application number of 202180087689.4, and the invention name of “Micro Light Emitting Diode Structure and Micro Light Emitting Diode Chip Including the Structure”.

[0002] CROSS-REFERENCE TO RELATED APPLICATIONS

[0003] This application claims the priority benefit of U.S. provisional application serial number 63 / 131,128, filed December 28, 2020, the entire contents of which are incorporated herein by reference. TECHNICAL FIELD

[0004] The present disclosure relates to a micro light emitting diode structure and a micro light emitting diode chip including the same. BACKGROUND

[0005] A micro light emitting diode (micro-LED) is a device that emits light using an electrical signal and has a size of about several micrometers or even smaller. The micro-LED can be driven with a low voltage, which leads to its widespread implementation in small optical elements. In recent years, the micro-LED has been developed as a lighting light source by improving its efficiency. SUMMARY

[0006] According to an aspect of several embodiments of the present disclosure, a micro light emitting diode structure includes a first type conductive layer, a second type conductive layer stacked on the first type conductive layer, and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer extends along a horizontal plane away from a top edge of the first type conductive layer and a bottom edge of the second type conductive layer, such that edges of the light emitting layer do not contact the top edge of the first type conductive layer and the bottom edge of the second type conductive layer. The bottom edge of the second type conductive layer is aligned with the top edge of the first type conductive layer.

[0007] According to another aspect of several embodiments of the present disclosure, a micro light emitting diode structure includes a first type conductive layer, a second type conductive layer stacked on the first type conductive layer, and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer extends along a horizontal plane away from a top edge of the first type conductive layer and a bottom edge of the second type conductive layer, such that edges of the light emitting layer do not contact the top edge of the first type conductive layer and the bottom edge of the second type conductive layer. An outline of the second type conductive layer projected on a top surface of the first type conductive layer is surrounded by the top edge of the first type conductive layer.

[0008] According to another aspect of the number of embodiments of the present disclosure, a micro light emitting diode structure includes: a first type of conductive layer; a second type of conductive layer stacked on the first type of conductive layer; and a light emitting layer formed between the first type of conductive layer and the second type of conductive layer. The light emitting layer extends along a horizontal plane away from a top edge of the first type of conductive layer and a bottom edge of the second type of conductive layer, such that edges of the light emitting layer do not contact the top edge of the first type of conductive layer and the bottom edge of the second type of conductive layer. A profile of the first type of conductive layer projected perpendicularly on a bottom surface of the second type of conductive layer is enclosed by the bottom edge of the second type of conductive layer.

[0009] According to another aspect of the number of embodiments of the present disclosure, a micro light emitting diode structure includes: a first type of conductive layer; a second type of conductive layer stacked on the first type of conductive layer; and a light emitting layer formed between the first type of conductive layer and the second type of conductive layer. The light emitting layer extends along a horizontal plane away from an edge of the first type of conductive layer. An edge of the light emitting layer is aligned with an edge of the second type of conductive layer. The edge of the second type of conductive layer extends along the horizontal plane away from the edge of the first type of conductive layer.

[0010] According to another aspect of the number of embodiments of the present disclosure, a micro light emitting diode structure includes: a first type of conductive layer; a second type of conductive layer stacked on the first type of conductive layer; and a light emitting layer formed between the first type of conductive layer and the second type of conductive layer. The light emitting layer extends along a horizontal plane away from an edge of the second type of conductive layer. An edge of the light emitting layer is aligned with an edge of the first type of conductive layer. The edge of the first type of conductive layer extends along the horizontal plane away from the edge of the second type of conductive layer.

[0011] According to another aspect of the number of embodiments of the present disclosure, a micro light emitting diode chip includes a plurality of micro-LEDs. At least one micro-LED of the plurality of micro-LEDs includes: a first type of conductive layer; a second type of conductive layer stacked on the first type of conductive layer; and a light emitting layer formed between the first type of conductive layer and the second type of conductive layer. The light emitting layer is continuously formed on the entire micro light emitting diode chip, and the plurality of micro-LEDs share the light emitting layer.

[0012] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one micro-LED of the plurality of micro-LEDs includes: a first type of conductive layer; a second type of conductive layer stacked on the first type of conductive layer; and a light emitting layer formed between the first type of conductive layer and the second type of conductive layer. The light emitting layer is continuously formed across the micro-LED chip, and the plurality of micro-LEDs share the light emitting layer. An isolation structure is formed between adjacent micro-LEDs, and at least a portion of the isolation structure is formed in the light emitting layer.

[0013] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one micro-LED of the plurality of micro-LEDs includes: a first type of conductive layer; a second type of conductive layer stacked on the first type of conductive layer; and a light emitting layer formed between the first type of conductive layer and the second type of conductive layer. The light emitting layer is continuously formed across the chip, and the plurality of micro-LEDs share the light emitting layer. An isolation structure is formed between adjacent micro-LEDs, and at least a portion of the isolation structure is formed in the light emitting layer. A top surface of the isolation structure is aligned with a top of the light emitting layer, and a bottom surface of the isolation structure is below the light emitting layer.

[0014] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one micro-LED of the plurality of micro-LEDs includes: a first type of conductive layer; a second type of conductive layer stacked on the first type of conductive layer; and a light emitting layer formed between the first type of conductive layer and the second type of conductive layer. The light emitting layer is continuously formed across the micro-LED chip, and the plurality of micro-LEDs share the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer, wherein an edge of the top spacer is aligned with an edge of the light emitting layer, and an edge of the bottom spacer is aligned with the edge of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light emitting layer, a top surface of the isolation structure is aligned with a top of the light emitting layer, and a bottom surface of the isolation structure is above a bottom surface of the bottom spacer and below the light emitting layer.

[0015] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one micro-LED of the plurality of micro-LEDs includes: a first type of conductive layer; a second type of conductive layer stacked on the first type of conductive layer; a light emitting layer formed between the first type of conductive layer and the second type of conductive layer. The light emitting layer is formed continuously across the chip, and the plurality of micro-LEDs share the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer, wherein an edge of the top spacer is aligned with an edge of the light emitting layer, and an edge of the bottom spacer is aligned with the edge of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light emitting layer, a top surface of the isolation structure is aligned with a top of the light emitting layer, and a bottom surface of the isolation structure is below the bottom spacer.

[0016] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one micro-LED of the plurality of micro-LEDs includes: a first type of conductive layer; a second type of conductive layer stacked on the first type of conductive layer; a light emitting layer formed between the first type of conductive layer and the second type of conductive layer. The light emitting layer is formed continuously across the micro-LED chip, and the plurality of micro-LEDs share the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer, wherein an edge of the top spacer is aligned with an edge of the light emitting layer, and an edge of the bottom spacer is aligned with the edge of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light emitting layer, a top surface of the isolation structure is aligned with a top of the light emitting layer, and a bottom surface of the isolation structure is aligned with a bottom surface of the bottom spacer.

[0017] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one micro-LED of the plurality of micro-LEDs includes: a first type of conductive layer; a second type of conductive layer stacked on the first type of conductive layer; a light emitting layer formed between the first type of conductive layer and the second type of conductive layer. The light emitting layer is formed continuously across the micro-LED chip, and the plurality of micro-LEDs share the light emitting layer. The micro-LED chip further includes: an isolation structure formed between adjacent micro-LEDs, at least a portion of the isolation structure is formed in the light emitting layer. A top surface of the isolation structure is above the light emitting layer. A bottom surface of the isolation structure is aligned with a bottom of the light emitting layer.

[0018] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one micro-LED of the plurality of micro-LEDs includes: a first type of conductive layer; a second type of conductive layer stacked on the first type of conductive layer; and a light emitting layer formed between the first type of conductive layer and the second type of conductive layer. The light emitting layer is continuously formed on the entire micro-LED chip, and the plurality of micro-LEDs share the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer, wherein an edge of the top spacer is aligned with an edge of the light emitting layer, and an edge of the bottom spacer is aligned with the edge of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light emitting layer, a bottom surface of the isolation structure is aligned with a bottom surface of the light emitting layer, and a top surface of the isolation structure is above the light emitting layer and below the top surface of the top spacer.

[0019] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one micro-LED of the plurality of micro-LEDs includes: a first type of conductive layer; a second type of conductive layer stacked on the first type of conductive layer; and a light emitting layer formed between the first type of conductive layer and the second type of conductive layer. The light emitting layer is continuously formed on the entire micro-LED chip, and the plurality of micro-LEDs share the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer, wherein an edge of the top spacer is aligned with an edge of the light emitting layer, and an edge of the bottom spacer is aligned with the edge of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light emitting layer, a bottom surface of the isolation structure is aligned with a bottom surface of the light emitting layer, and a top surface of the isolation structure is aligned with a top surface of the top spacer.

[0020] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one micro-LED of the plurality of micro-LEDs includes a first type of conductive layer, a second type of conductive layer stacked on the first type of conductive layer, and a light emitting layer formed between the first type of conductive layer and the second type of conductive layer. The light emitting layer is continuously formed across the micro-LED chip, and the plurality of micro-LEDs share the light emitting layer. The micro-LED chip further includes a top spacer formed on a top surface of the light emitting layer, a bottom spacer formed on a bottom surface of the light emitting layer, wherein edges of the top spacer are aligned with edges of the light emitting layer and edges of the bottom spacer are aligned with the edges of the light emitting layer, and an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light emitting layer, a bottom surface of the isolation structure is aligned with a bottom surface of the light emitting layer, and a top surface of the isolation structure is above the top surface of the light emitting layer.

[0021] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one micro-LED of the plurality of micro-LEDs includes a first type of conductive layer, a second type of conductive layer stacked on the first type of conductive layer, and a light emitting layer formed between the first type of conductive layer and the second type of conductive layer. The light emitting layer is continuously formed across the micro-LED chip, and the plurality of micro-LEDs share the light emitting layer. An isolation structure is formed between adjacent micro-LEDs, at least a portion of the isolation structure is formed in the light emitting layer. A top surface of the isolation structure is above the light emitting layer, and a bottom surface of the isolation structure is below the light emitting layer.

[0022] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one micro-LED of the plurality of micro-LEDs includes a first type of conductive layer, a second type of conductive layer stacked on the first type of conductive layer, and a light emitting layer formed between the first type of conductive layer and the second type of conductive layer. The light emitting layer is continuously formed across the micro-LED chip, and the plurality of micro-LEDs share the light emitting layer. The micro-LED chip further includes a top spacer formed on a top surface of the light emitting layer, a bottom spacer formed on a bottom surface of the light emitting layer, wherein edges of the top spacer are aligned with edges of the light emitting layer and edges of the bottom spacer are aligned with the edges of the light emitting layer, and an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light emitting layer, a top surface of the isolation structure is above the light emitting layer and below a top surface of the top spacer, and a bottom surface of the isolation structure is below a bottom of the light emitting layer.

[0023] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one micro-LED of the plurality of micro-LEDs includes: a first type of conductive layer; a second type of conductive layer stacked on the first type of conductive layer; and a light emitting layer formed between the first type of conductive layer and the second type of conductive layer. The light emitting layer is continuously formed across the micro-LED chip, and the plurality of micro-LEDs share the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer, wherein an edge of the top spacer is aligned with an edge of the light emitting layer, and an edge of the bottom spacer is aligned with the edge of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light emitting layer, a top surface of the isolation structure is above the light emitting layer and below a top surface of the top spacer, and a bottom surface of the isolation structure is below a bottom of the light emitting layer and above a bottom surface of the bottom spacer.

[0024] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one micro-LED of the plurality of micro-LEDs includes: a first type of conductive layer; a second type of conductive layer stacked on the first type of conductive layer; and a light emitting layer formed between the first type of conductive layer and the second type of conductive layer. The light emitting layer is continuously formed across the micro-LED chip, and the plurality of micro-LEDs share the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer, wherein an edge of the top spacer is aligned with an edge of the light emitting layer, and an edge of the bottom spacer is aligned with the edge of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light emitting layer, a top surface of the isolation structure is above the light emitting layer and below a top surface of the top spacer, and a bottom surface of the isolation structure is aligned with a bottom surface of the bottom spacer.

[0025] According to another aspect of the number of embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one micro-LED of the plurality of micro-LEDs includes: a first type of conductive layer; a second type of conductive layer stacked on the first type of conductive layer; and a light emitting layer formed between the first type of conductive layer and the second type of conductive layer. The light emitting layer is continuously formed on the entire micro-LED chip, and the plurality of micro-LEDs share the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer, wherein an edge of the top spacer is aligned with an edge of the light emitting layer, and an edge of the bottom spacer is aligned with the edge of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light emitting layer, a top surface of the isolation structure is above the light emitting layer and below a top surface of the top spacer, and a bottom surface of the isolation structure is below the bottom spacer.

[0026] According to another aspect of the number of embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one micro-LED of the plurality of micro-LEDs includes: a first type of conductive layer; a second type of conductive layer stacked on the first type of conductive layer; and a light emitting layer formed between the first type of conductive layer and the second type of conductive layer. The light emitting layer is continuously formed on the entire micro-LED chip, and the plurality of micro-LEDs share the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer, wherein an edge of the top spacer is aligned with an edge of the light emitting layer, and an edge of the bottom spacer is aligned with the edge of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light emitting layer, a bottom surface of the isolation structure is below the light emitting layer and above a bottom surface of the bottom spacer, and a top surface of the isolation structure is aligned with a top surface of the top spacer.

[0027] According to another aspect of the number of embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one micro-LED of the plurality of micro-LEDs includes: a first type of conductive layer; a second type of conductive layer stacked on the first type of conductive layer; and a light emitting layer formed between the first type of conductive layer and the second type of conductive layer. The light emitting layer is continuously formed on the entire micro-LED chip, and the plurality of micro-LEDs share the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer, wherein an edge of the top spacer is aligned with an edge of the light emitting layer, and an edge of the bottom spacer is aligned with the edge of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light emitting layer, a bottom surface of the isolation structure is below the light emitting layer and above a bottom surface of the bottom spacer, and a top surface of the isolation structure is above the top spacer.

[0028] According to another aspect of the number of embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one micro-LED of the plurality of micro-LEDs includes: a first type of conductive layer; a second type of conductive layer stacked on the first type of conductive layer; and a light emitting layer formed between the first type of conductive layer and the second type of conductive layer. The light emitting layer is continuously formed on the entire micro-LED chip, and the plurality of micro-LEDs share the light emitting layer. An isolation structure is formed between adjacent micro-LEDs, at least a portion of the isolation structure is formed in the light emitting layer. A bottom surface of the isolation structure is aligned with a bottom of the light emitting layer, and a top surface of the isolation structure is aligned with a top surface of the light emitting layer.

[0029] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one micro-LED of the plurality of micro-LEDs includes: a first type of conductive layer; a second type of conductive layer stacked on the first type of conductive layer; and a light emitting layer formed between the first type of conductive layer and the second type of conductive layer. The light emitting layer is continuously formed across the micro-LED chip, and the plurality of micro-LEDs share the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer, wherein edges of the top spacer are aligned with edges of the light emitting layer, and edges of the bottom spacer are aligned with the edges of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light emitting layer, a bottom surface of the isolation structure is aligned with a bottom surface of the bottom spacer, and a top surface of the isolation structure is aligned with a top surface of the top spacer.

[0030] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one micro-LED of the plurality of micro-LEDs includes: a first type of conductive layer; a second type of conductive layer stacked on the first type of conductive layer; and a light emitting layer formed between the first type of conductive layer and the second type of conductive layer. The light emitting layer is continuously formed across the micro-LED chip, and the plurality of micro-LEDs share the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer, wherein edges of the top spacer are aligned with edges of the light emitting layer, and edges of the bottom spacer are aligned with the edges of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light emitting layer, a top surface of the isolation structure is aligned with a top surface of the top spacer, and a bottom surface of the isolation structure is below the bottom spacer.

[0031] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one micro-LED of the plurality of micro-LEDs includes: a first type of conductive layer; a second type of conductive layer stacked on the first type of conductive layer; and a light emitting layer formed between the first type of conductive layer and the second type of conductive layer. The light emitting layer is continuously formed across the micro-LED chip, and the plurality of micro-LEDs share the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer, wherein edges of the top spacer are aligned with edges of the light emitting layer, and edges of the bottom spacer are aligned with the edges of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light emitting layer, a bottom surface of the isolation structure is aligned with a bottom surface of the bottom spacer, and a top surface of the isolation structure is above the top spacer.

[0032] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one micro-LED of the plurality of micro-LEDs includes: a first type of conductive layer; a second type of conductive layer stacked on the first type of conductive layer; and a light emitting layer formed between the first type of conductive layer and the second type of conductive layer. The light emitting layer is continuously formed across the micro-LED chip, and the plurality of micro-LEDs share the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer, wherein edges of the top spacer are aligned with edges of the light emitting layer, and edges of the bottom spacer are aligned with the edges of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light emitting layer, a bottom surface of the isolation structure is below the bottom spacer, and a top surface of the isolation structure is above the top spacer.

[0033] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one micro-LED of the plurality of micro-LEDs includes: a first type of conductive layer; a second type of conductive layer stacked on the first type of conductive layer; and a light emitting layer formed between the first type of conductive layer and the second type of conductive layer. The light emitting layer is continuously formed across the micro-LED chip, and the plurality of micro-LEDs share the light emitting layer. A bottom edge of the second type of conductive layer is aligned with a top edge of the first type of conductive layer.

[0034] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one micro-LED of the plurality of micro-LEDs includes: a first type of conductive layer; a second type of conductive layer stacked on the first type of conductive layer; and a light emitting layer formed between the first type of conductive layer and the second type of conductive layer. The light emitting layer is continuously formed across the micro-LED chip, and the plurality of micro-LEDs share the light emitting layer. An outline of the second type of conductive layer vertically projected on a top surface of the first type of conductive layer is enclosed by edges of the first type of conductive layer.

[0035] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one micro-LED of the plurality of micro-LEDs includes: a first type of conductive layer; a second type of conductive layer stacked on the first type of conductive layer; and a light emitting layer formed between the first type of conductive layer and the second type of conductive layer. The light emitting layer is continuously formed across the micro-LED chip, and the plurality of micro-LEDs share the light emitting layer. An outline of the first type of conductive layer vertically projected on a bottom surface of the second type of conductive layer is enclosed by edges of the second type of conductive layer.

[0036] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one micro-LED of the plurality of micro-LEDs includes: a first type of conductive layer; a second type of conductive layer stacked on the first type of conductive layer; and a light emitting layer formed between the first type of conductive layer and the second type of conductive layer, at least a portion of the light emitting layer being formed between adjacent micro-LEDs. The micro-LED chip further includes a metal layer formed on the light emitting layer between the adjacent micro-LEDs.

[0037] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one micro-LED of the plurality of micro-LEDs includes: a first type of conductive layer; a second type of conductive layer stacked on the first type of conductive layer; and a light emitting layer formed between the first type of conductive layer and the second type of conductive layer. The light emitting layer extends along a horizontal plane away from a top edge of the first type of conductive layer and a bottom edge of the second type of conductive layer, such that edges of the light emitting layer do not contact the top edge of the first type of conductive layer and the bottom edge of the second type of conductive layer, and the bottom edge of the second type of conductive layer is aligned with the top edge of the first type of conductive layer. The micro-LED chip further includes a metal layer formed on the light emitting layer between adjacent micro-LEDs.

[0038] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one micro-LED of the plurality of micro-LEDs includes: a first type of conductive layer; a second type of conductive layer stacked on the first type of conductive layer; and a light emitting layer formed between the first type of conductive layer and the second type of conductive layer. The light emitting layer extends along a horizontal plane away from a top edge of the first type of conductive layer and a bottom edge of the second type of conductive layer, such that edges of the light emitting layer do not contact the top edge of the first type of conductive layer and the bottom edge of the second type of conductive layer, and an outline of the second type of conductive layer vertically projected on a top surface of the first type of conductive layer is enclosed by edges of the first type of conductive layer. The micro-LED chip further includes a metal layer formed on a portion of the light emitting layer extending from the top edge of the first type of conductive layer.

[0039] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one micro-LED of the plurality of micro-LEDs includes: a first type of conductive layer; a second type of conductive layer stacked on the first type of conductive layer; and a light emitting layer formed between the first type of conductive layer and the second type of conductive layer. The light emitting layer extends along a horizontal plane away from a top edge of the first type of conductive layer and a bottom edge of the second type of conductive layer, such that edges of the light emitting layer do not contact the top edge of the first type of conductive layer and the bottom edge of the second type of conductive layer. The first type of conductive layer vertically projected on a bottom surface of the second type of conductive layer is enclosed by the bottom edge of the second type of conductive layer. The micro-LED chip further includes a metal layer formed on a portion of the light emitting layer extending from the second type of conductive layer. BRIEF DESCRIPTION OF DRAWINGS

[0040] FIG. 1A A cross-sectional view of a micro-LED structure according to a first embodiment of the present disclosure.

[0041] FIG. 1B A cross-sectional view of a micro-LED structure according to a first variant of the first embodiment of the present disclosure.

[0042] FIG. 1C A cross-sectional view of a micro-LED structure according to a second variant of the first embodiment of the present disclosure.

[0043] FIG. 1D A cross-sectional view of a micro-LED structure according to a third variant of the first embodiment of the present disclosure.

[0044] FIG. 2A A cross-sectional view of a micro-LED structure according to a second embodiment of the present disclosure.

[0045] FIG. 2B Cross-sectional view of a micro light emitting diode structure according to a first variant of the second embodiment of the present disclosure.

[0046] FIG. 2C Cross-sectional view of a micro light emitting diode structure according to a second variant of the second embodiment of the present disclosure.

[0047] FIG. 2D Cross-sectional view of a micro light emitting diode structure according to a third variant of the second embodiment of the present disclosure.

[0048] FIG. 3A Cross-sectional view of a micro light emitting diode structure according to the third embodiment of the present disclosure.

[0049] FIG. 3B Cross-sectional view of a micro light emitting diode structure according to a first variant of the third embodiment of the present disclosure.

[0050] FIG. 3C Cross-sectional view of a micro light emitting diode structure according to a second variant of the third embodiment of the present disclosure.

[0051] FIG. 3D Cross-sectional view of a micro light emitting diode structure according to a third variant of the third embodiment of the present disclosure.

[0052] FIG. 4A Cross-sectional view of a micro light emitting diode structure according to the fourth embodiment of the present disclosure.

[0053] FIG. 4B Cross-sectional view of a micro light emitting diode structure according to a first variant of the fourth embodiment of the present disclosure.

[0054] FIG. 4C Cross-sectional view of a micro light emitting diode structure according to a second variant of the fourth embodiment of the present disclosure.

[0055] FIG. 4D Cross-sectional view of a micro light emitting diode structure according to a third variant of the fourth embodiment of the present disclosure.

[0056] FIG. 5A Cross-sectional view of a micro light emitting diode structure according to the fifth embodiment of the present disclosure.

[0057] FIG. 5B Cross-sectional view of a micro light emitting diode structure according to a first variant of the fifth embodiment of the present disclosure.

[0058] FIG. 5CCross-sectional view of a micro light emitting diode structure according to a second variant of the fifth embodiment of the disclosure.

[0059] FIG. 5D Cross-sectional view of a micro light emitting diode structure according to a third variant of the fifth embodiment of the disclosure.

[0060] FIG. 6A Cross-sectional view of a micro light emitting diode chip according to the sixth embodiment of the disclosure.

[0061] FIG. 6B Cross-sectional view of a micro light emitting diode chip according to a first variant of the sixth embodiment of the disclosure.

[0062] FIG. 6C Cross-sectional view of a micro light emitting diode chip according to a second variant of the sixth embodiment of the disclosure.

[0063] FIG. 6D Cross-sectional view of a micro light emitting diode chip according to a third variant of the sixth embodiment of the disclosure.

[0064] FIG. 6E Cross-sectional view of a micro light emitting diode chip according to a fourth variant of the sixth embodiment of the disclosure.

[0065] FIG. 6F Cross-sectional view of a micro light emitting diode chip according to a fifth variant of the sixth embodiment of the disclosure.

[0066] FIG. 7 Cross-sectional view of a micro light emitting diode chip according to the seventh embodiment of the disclosure.

[0067] FIG. 8A Cross-sectional view of a micro light emitting diode chip according to the eighth embodiment of the disclosure.

[0068] FIG. 8B Cross-sectional view of a micro light emitting diode chip according to a first variant of the eighth embodiment of the disclosure.

[0069] FIG. 8C Cross-sectional view of a micro light emitting diode chip according to a second variant of the eighth embodiment of the disclosure.

[0070] FIG. 9A Cross-sectional view of a micro light emitting diode chip according to the ninth embodiment of the disclosure.

[0071] FIG. 9B Cross-sectional view of a micro light emitting diode chip according to a first variant of the ninth embodiment of the disclosure.

[0072] FIG. 9C Cross-sectional view of a micro light emitting diode chip according to a second variant of the seventh embodiment of the disclosure.

[0073] FIG. 10A Cross-sectional view of a micro light emitting diode chip according to the tenth embodiment of the disclosure.

[0074] FIG. 10B Cross-sectional view of a micro light emitting diode chip according to a first variant of the tenth embodiment of the disclosure.

[0075] FIG. 10C Cross-sectional view of a micro light emitting diode chip according to a second variant of the tenth embodiment of the disclosure.

[0076] FIG. 11A Cross-sectional view of a micro light emitting diode chip according to the eleventh embodiment of the disclosure.

[0077] FIG. 11B Cross-sectional view of a micro light emitting diode chip according to a first variant of the eleventh embodiment of the disclosure.

[0078] FIG. 11C Cross-sectional view of a micro light emitting diode chip according to a second variant of the eleventh embodiment of the disclosure.

[0079] FIG. 11D Cross-sectional view of a micro light emitting diode chip according to a third variant of the eleventh embodiment of the disclosure.

[0080] FIG. 12A Cross-sectional view of a micro light emitting diode chip according to the twelfth embodiment of the disclosure.

[0081] FIG. 12B Cross-sectional view of a micro light emitting diode chip according to a first variant of the twelfth embodiment of the disclosure.

[0082] FIG. 12C Cross-sectional view of a micro light emitting diode chip according to a second variant of the twelfth embodiment of the disclosure.

[0083] FIG. 12D Cross-sectional view of a micro light emitting diode chip according to a third variant of the twelfth embodiment of the disclosure.

[0084] FIG. 13A Cross-sectional view of a micro light emitting diode chip according to the thirteenth embodiment of the disclosure.

[0085] FIG. 13B Cross-sectional view of a micro light emitting diode chip according to a variant of the thirteenth embodiment of the disclosure.

[0086] FIG. 14A Cross-sectional view of a micro light emitting diode chip according to a fourteenth embodiment variant of the present disclosure.

[0087] FIG. 14B Cross-sectional view of a micro light emitting diode chip according to a fourteenth embodiment variant of the present disclosure.

[0088] FIG. 15A Cross-sectional view of a micro light emitting diode chip according to a fifteenth embodiment variant of the present disclosure.

[0089] FIG. 15B Cross-sectional view of a micro light emitting diode chip according to a fifteenth embodiment variant of the present disclosure.

[0090] FIG. 16A Cross-sectional view of a micro light emitting diode chip according to a sixteenth embodiment variant of the present disclosure.

[0091] FIG. 16B Cross-sectional view of a micro light emitting diode chip according to a sixteenth embodiment variant of the present disclosure.

[0092] FIG. 17A Cross-sectional view of a micro light emitting diode chip according to a seventeenth embodiment variant of the present disclosure.

[0093] FIG. 17B Cross-sectional view of a micro light emitting diode chip according to a seventeenth embodiment variant of the present disclosure.

[0094] FIG. 18 Cross-sectional view of a micro light emitting diode structure according to a comparative embodiment. DETAILED DESCRIPTION

[0095] The following detailed description of specific embodiments provides a thorough understanding of the disclosure. However, these embodiments are not meant to limit the disclosure. The scope of the disclosure is limited only by the claims.

[0096] The dimensions of certain structures or portions of structures can be exaggerated relative to other structures or portions for purposes of presentation in the drawings. Thus, the dimensions of the drawings are for the purposes of illustrating the subject matter of the present disclosure. The same or similar components in different drawings are denoted by the same component reference symbols, unless otherwise specified.

[0097] In addition, terms indicating relative spatial positions, such as "front," "rear," "upper," "lower," "above," "below," etc., are used herein to explain the relationship between an element or feature depicted in a drawing and another element or feature therein. Terms indicating relative spatial positions may refer to positions when the device is in use or operation in addition to those shown in the drawings. For example, if the device shown in the drawings is turned over, an element described as being "below" or "beneath" another element or feature would be "above" the other element or feature. Thus, the illustrated term "below" can include both above and below positions. The device can be oriented in other ways (rotated 90 degrees or facing another direction), and spatially relative descriptive terms appearing herein should be interpreted accordingly. When a component or layer is referred to as being "above" or "connected to" another component or layer, it can be directly above or directly connected to the other component or layer, or there may be intervening components or layers.

[0098] First embodiment

[0099] FIG. 1A FIG is a cross-sectional view of a micro-LED structure 1000 according to a first embodiment of the present disclosure. FIG. 1A As shown, micro-LED structure 1000 includes a first-type conductive layer 101, a second-type conductive layer 102 stacked on first-type conductive layer 101, and a light-emitting layer 103 formed between first-type conductive layer 101 and second-type conductive layer 102. Light-emitting layer 103 extends along a horizontal plane away from a top edge 101a of first-type conductive layer 101 and a bottom edge 102a of second-type conductive layer 102, such that an edge 103a of light-emitting layer 103 does not contact top edge 101a of first-type conductive layer 101 or bottom edge 102a of second-type conductive layer 102. Bottom edge 102a of second-type conductive layer 102 is aligned with top edge 101a of first-type conductive layer 101.

[0100] The first type conduction layer 101 and the second type conduction layer 102 may be any type of conduction layer. In one embodiment, the first type conduction layer 101 may be an n-type conduction semiconductor layer including one or more n-type dopants, and the second type conduction layer 102 may be a p-type conduction semiconductor layer including one or more p-type dopants. In another embodiment, the first type conduction layer 101 may be a p-type conduction semiconductor layer, and the second type conduction layer 102 may be an n-type conduction semiconductor layer. FIG. 1A As shown, the top area of ​​the first type conductive layer 101 is larger than the bottom area of ​​the first type conductive layer 101 , and the top area of ​​the second type conductive layer 102 is smaller than the bottom area of ​​the second type conductive layer 102 .

[0101] The light-emitting layer 103 may have a quantum well structure in which quantum well layers and barrier layers are alternately stacked. In one embodiment, the light-emitting layer 103 may include a pair of quantum well layers and a barrier layer interposed between the quantum well layers. In another embodiment, the light-emitting layer 103 may include multiple pairs of quantum well layers and barrier layers interposed between adjacent quantum well layers. These quantum well layers may be made of, for example, gallium arsenide (GaAs), aluminum gallium arsenide (AlGaAs), indium gallium arsenide (InGaAs), gallium arsenic phosphide (GaAsP), aluminum gallium indium phosphide (AlGaInP), gallium indium arsenide phosphide (GaInAsP), gallium indium phosphide (GaInP), aluminum indium phosphide (AlInP), gallium phosphide (GaP), indium phosphide (InP), or the like. These barrier layers may be made of, for example, gallium arsenide, aluminum gallium arsenide, indium gallium arsenide, aluminum indium gallium phosphide, indium gallium arsenide phosphide, indium gallium arsenide phosphide, aluminum indium phosphide, gallium phosphide, indium phosphide, or the like.

[0102] like FIG. 1A As shown, micro-LED structure 1000 also includes a top spacer 107 formed on the top surface 103b of light-emitting layer 103 and a bottom spacer 108 formed on the bottom surface 103c of light-emitting layer 103. Top spacer 107 and bottom spacer 108 can be made of gallium arsenide, aluminum gallium arsenide, indium gallium arsenide, aluminum indium gallium phosphide, indium gallium arsenide phosphide, indium gallium arsenide phosphide, aluminum indium phosphide, gallium phosphide, indium phosphide, or the like. Top spacer 107 and bottom spacer 108 are configured to control carrier injection efficiency to improve micro-LED performance and reliability. Edges 107a of top spacer 107 and 108a of bottom spacer 108 are aligned with edge 103a of light-emitting layer 103. The thickness of top spacer 107 is greater than the thickness of light-emitting layer 103. The thickness of bottom spacer 108 is greater than the thickness of light-emitting layer 103.

[0103] exist FIG. 1A In the illustrated embodiment, the micro-LED structure 1000 further includes a reflective structure 104 surrounding the first-type conductive layer 101. The reflective structure 104 is attached to the sidewall surface 101b of the first-type conductive layer 101. The reflective structure 104 on the sidewall of the first-type conductive layer 101 is inclined relative to the surface 110a of the substrate 110. The inclination angle of the reflective structure 104 relative to the surface 110a of the substrate 110 is approximately 30 degrees to approximately 75 degrees. The reflective structure 104 on the sidewall surface 101b of the first-type conductive layer 101 is made of an ODR (omnidirectional reflector) structure or a DBR (distributed Bragg reflector) structure. The reflective structure 104 is configured to collect light onto the second-type conductive layer 102.

[0104] exist FIG. 1AIn the illustrated embodiment, the micro LED structure 1000 further includes a bottom connection structure 105 formed below the first type conductive layer 101 and electrically connected to the first type conductive layer 101. The bottom connection structure 105 may be formed of a conductive material (e.g., metal) and may be reflective.

[0105] like FIG. 1A As shown, micro LED structure 1000 further includes a substrate 110 below first-type conductive layer 101, and is electrically connected to bottom connection structure 105 via connection pads 106 in substrate 110. In some embodiments, substrate 110 can be made of one or more materials from the III-V group, such as gallium nitride (GaN). In some other embodiments, substrate 110 can include an integrated circuit (IC). Connection pads 106 can be made of a conductive material, such as copper (Cu).

[0106] like FIG. 1A As shown, the micro LED structure 1000 further includes an isolation layer 109 surrounding the first type conductive layer 101 and below the light emitting layer 103. The isolation layer 109 may be made of a light absorbing material including, for example, impurity-doped silicon dioxide (SiO2) or silicon nitride (Si3N4).

[0107] like FIG. 1A As shown, the micro LED structure 1000 further includes a micro lens 111 formed on the second type conductive layer 102 and on the top surface 107 b of the top spacer 107 . The micro lens 111 is configured to converge the light emitted by the light emitting layer 103 .

[0108] First variant of the first embodiment

[0109] FIG. 1B is a cross-sectional view of a micro light emitting diode structure 1001 according to a first variation of the first embodiment of the present disclosure. FIG. 1B The embodiment shown is FIG. 1A The embodiment shown is different in that the sidewall surface 101b of the first type conductive layer 101 is curved, and the reflective structure 1041 formed on the sidewall surface 101b of the first type conductive layer 101 has a curved surface 104a. In addition to the reflective structure 1041, the embodiment shown in FIG. FIG. 1B The components of the micro-LED structure 1001 are shown in FIG. FIG. 1A The components of the micro LED structure 1000 are the same, so the detailed description of these components will not be repeated.

[0110] Second variant of the first embodiment

[0111] FIG. 1Cis a cross-sectional view of a micro light emitting diode structure 1002 according to a second variation of the first embodiment of the present disclosure. FIG. 1C The embodiment shown is FIG. 1A The embodiment shown differs in that a reflective structure 1042 is attached to the bottom surface 101c of the first type conductive layer 101. The reflective structure 1042 is conductive. A bottom connection structure 105 is formed at the bottom of the reflective structure 1042 and is electrically connected to the reflective structure 1042. The reflective structure 1042 on the bottom surface 101c of the first type conductive layer 101 can be made of metal. In addition to the reflective structure 1042, the bottom connection structure 105 is also shown. FIG. 1C The components of the micro-LED structure 1002 are shown in FIG. FIG. 1A The components of the micro LED structure 1000 are the same, so the detailed description of these components will not be repeated.

[0112] Third variant of the first embodiment

[0113] FIG. 1D is a cross-sectional view of a micro light emitting diode structure 1003 according to a third variation of the first embodiment of the present disclosure. FIG. 1D The embodiment shown is FIG. 1A The embodiment shown is different in that a reflective structure 1043 is attached to both the sidewall surface 101b and the bottom surface 101c of the first type conductive layer 101. The reflective structure 1043 is conductive. A bottom connection structure 105 is formed at the bottom of the reflective structure 1043 and is electrically connected to the reflective structure 1043. In addition to the reflective structure 1043, the bottom connection structure 105 is also shown. FIG. 1D The components of the micro-LED structure 1003 are shown in FIG. FIG. 1A The components of the micro LED structure 1000 are the same, so the detailed description of these components will not be repeated.

[0114] Second embodiment

[0115] FIG. 2A is a cross-sectional view of a micro light emitting diode structure 2000 according to a second embodiment of the present disclosure. FIG. 2A The second embodiment shown is FIG. 1A The difference from the first embodiment shown is that the bottom edge 102a of the second type conductive layer 102 is not aligned with the top edge 101a of the first type conductive layer 101. Instead, the outline of the second type conductive layer 102, vertically projected onto the top surface 101d of the first type conductive layer 101, is surrounded by the top edge 101a of the first type conductive layer 101. FIG. 2A The components of the micro LED structure 2000 of the second embodiment are FIG. 1A The components of the micro LED structure 1000 of the first embodiment are the same, and thus detailed descriptions of these components will not be repeated.

[0116] First variant of the second embodiment

[0117] FIG. 2B A cross-sectional view of a micro light emitting diode structure 2001 according to the first variant of the second embodiment of the present disclosure. FIG. 2B The illustrated embodiment is different from FIG. 2A The illustrated embodiment is different in that the sidewall surface 101b of the first type conductive layer 101 is curved, and the reflective structure 1041 formed on the sidewall surface 101b of the first type conductive layer 101 has a curved surface 104a. Except for the reflective structure 1041, the components of the micro light emitting diode structure 2001 are the same as those of the micro light emitting diode structure 2000 illustrated in FIG. 2B The components of the micro light emitting diode structure 2001 are the same as those of the micro light emitting diode structure 2000 illustrated in FIG. 2A The components of the micro light emitting diode structure 2000 are the same as those of the micro light emitting diode structure 1000 illustrated in

[0118] Second variant of the second embodiment

[0119] FIG. 2C A cross-sectional view of a micro light emitting diode structure 2002 according to the second variant of the second embodiment of the present disclosure. FIG. 2C The illustrated embodiment is different from FIG. 2A The illustrated embodiment is different in that the reflective structure 1042 is attached on the bottom surface 101c of the first type conductive layer 101. The reflective structure 1042 is electrically conductive. The bottom connection structure 105 is formed on the bottom of the reflective structure 1042 and is electrically connected with the bottom of the reflective structure 1042. The reflective structure 1042 on the bottom surface 101c of the first type conductive layer 101 can be made of metal. Except for the reflective structure 1042, the components of the micro light emitting diode structure 2002 are the same as those of the micro light emitting diode structure 2001 illustrated in FIG. 2C The components of the micro light emitting diode structure 2002 are the same as those of the micro light emitting diode structure 2001 illustrated in FIG. 2A The components of the micro light emitting diode structure 2000 are the same as those of the micro light emitting diode structure 1000 illustrated in

[0120] Third variant of the second embodiment

[0121] FIG. 2D A cross-sectional view of a micro light emitting diode structure 2003 according to the third variant of the second embodiment of the present disclosure. FIG. 2D The illustrated embodiment is different from FIG. 2A The illustrated embodiment is different in that the reflective structure 1043 is attached on both the sidewall surface 101b and the bottom surface 101c of the first type conductive layer 101. The reflective structure 1043 is electrically conductive. The bottom connection structure 105 is formed on the bottom of the reflective structure 1043 and is electrically connected with the reflective structure 1043. Except for the reflective structure 1043, the components of the micro light emitting diode structure 2003 are the same as those of the micro light emitting diode structure 2002 illustrated in FIG. 2DThe components of the micro-LED structure 2003 are shown in FIG. FIG. 2A The components of the micro LED structure 2000 are the same, so the detailed description of these components will not be repeated.

[0122] Third embodiment

[0123] FIG. 3A is a cross-sectional view of a micro light emitting diode structure 3000 according to a third embodiment of the present disclosure. FIG. 3A The third embodiment shown is FIG. 1A The difference from the first embodiment shown is that the bottom edge 102a of the second type conductive layer 102 is not aligned with the top edge 101a of the first type conductive layer 101. Instead, the outline of the first type conductive layer 101 vertically projected onto the bottom surface 102b of the second type conductive layer 102 is surrounded by the bottom edge 102a of the second type conductive layer 102. FIG. 3A The components of the micro LED structure 3000 of the third embodiment are FIG. 1A The components of the micro LED structure 1000 of the first embodiment are the same, and thus detailed descriptions of these components will not be repeated.

[0124] First variant of the third embodiment

[0125] FIG. 3B is a cross-sectional view of a micro light emitting diode structure 3001 according to a first variation of the third embodiment of the present disclosure. FIG. 3B The embodiment shown is FIG. 3A The embodiment shown is different in that the sidewall surface 101b of the first type conductive layer 101 is curved, and the reflective structure 1041 formed on the sidewall surface 101b of the first type conductive layer 101 has a curved surface 104a. FIG. 3B The components of the micro-LED structure 3001 are shown in FIG. FIG. 3A The components of the micro LED structure 3000 are the same, so the detailed description of these components will not be repeated.

[0126] Second variant of the third embodiment

[0127] FIG. 3C is a cross-sectional view of a micro light emitting diode structure 3002 according to a second variation of the third embodiment of the present disclosure. FIG. 3C The embodiment shown is FIG. 3AThe embodiment shown is different in that a reflective structure 1042 is attached to the bottom surface 101c of the first type conductive layer 101. The reflective structure 1042 is conductive. A bottom connection structure 105 is formed at the bottom of the reflective structure 1042 and is electrically connected to the bottom of the reflective structure 1042. The reflective structure 1042 on the bottom surface 101c of the first type conductive layer 101 can be made of metal. In addition to the reflective structure 1042, the bottom connection structure 105 is electrically connected to the bottom of the reflective structure 1042. FIG. 3C The components of the micro-LED structure 3002 are shown in FIG. FIG. 3A The components of the micro LED structure 3000 are the same, so the detailed description of these components will not be repeated.

[0128] Third variant of the third embodiment

[0129] FIG. 3D is a cross-sectional view of a micro light emitting diode structure 3003 according to a third variation of the third embodiment of the present disclosure. FIG. 3D The embodiment shown is FIG. 3A The embodiment shown is different in that the reflective structure 1043 is attached to both the sidewall surface 101b and the bottom surface 101c of the first type conductive layer 101. The reflective structure 1043 is conductive. The bottom connection structure 105 is formed at the bottom of the reflective structure 1043 and is electrically connected to the reflective structure 1043. In addition to the reflective structure 1042, the bottom connection structure 105 is also electrically connected to the reflective structure 1043. FIG. 3D The components of the micro-LED structure 3003 are shown in FIG. FIG. 3A The components of the micro LED structure 3000 are the same, so the detailed description of these components will not be repeated.

[0130] Fourth Implementation Plan

[0131] FIG. 4A is a cross-sectional view of a micro light emitting diode structure 4000 according to a fourth embodiment of the present disclosure. FIG. 4A The fourth embodiment shown is FIG. 3AThe third embodiment shown differs in that the light-emitting layer 103 extends along a horizontal plane away from the top edge 101a of the first-type conductive layer 101, and the edge 103a of the light-emitting layer 103 is aligned with the bottom edge 102a of the second-type conductive layer 102. Furthermore, the micro-LED structure 4000 further includes a top isolation layer 114 surrounding the light-emitting layer 103. The top isolation layer 114 can be made of one or more electrically insulating dielectric materials, such as silicon dioxide, silicon nitride, aluminum oxide (Al2O3), titanium dioxide (TiO2), hafnium dioxide (HfO2), aluminum nitride (AlN), or the like. The top isolation layer 114 is configured to isolate the micro-LED structure 4000 from adjacent micro-LED structures (not shown). A microlens 111 is formed on the second-type conductive layer 102 and on the top surface 114a of the isolation layer 114. FIG. 4A The other components of the micro-LED structure 4000 of the fourth embodiment are FIG. 3A The components of the micro LED structure 3000 of the first embodiment are the same, and thus detailed descriptions of these components will not be repeated.

[0132] First variant of the fourth embodiment

[0133] FIG. 4B is a cross-sectional view of a micro light emitting diode structure 4001 according to a first variation of the fourth embodiment of the present disclosure. FIG. 4B The embodiment shown is FIG. 4A The embodiment shown is different in that the sidewall surface 101b of the first type conductive layer 101 is curved, and the reflective structure 1041 is formed on the sidewall surface 101b of the first type conductive layer 101 and has a curved surface 104a. FIG. 4B The components of the micro-LED structure 4001 are shown in FIG. FIG. 4A The components of the micro-LED structure 4000 are the same, so the detailed description of these components will not be repeated.

[0134] Second variant of the fourth embodiment

[0135] FIG. 4C is a cross-sectional view of a micro light emitting diode structure 4002 according to a second variation of the fourth embodiment of the present disclosure. FIG. 4C The embodiment shown is FIG. 4AThe difference between the illustrated embodiment and the embodiment illustrated in FIG. 4 is that the reflective structure 1042 is attached on the bottom surface 101c of the first type of conductive layer 101. The reflective structure 1042 is electrically conductive. The bottom connecting structure 105 is formed on and electrically connected to the bottom of the reflective structure 1042. The reflective structure 1042 on the bottom surface 101c of the first type of conductive layer 101 can be made of metal. Except for the reflective structure 1042, the components of the micro light emitting diode structure 4002 are the same as the components of the micro light emitting diode structure 4000 illustrated in FIG. 4, and thus the detailed description of these components is not repeated. FIG. 4C The difference between the illustrated embodiment and the embodiment illustrated in FIG. 4 is that the reflective structure 1042 is attached on the bottom surface 101c of the first type of conductive layer 101. The reflective structure 1042 is electrically conductive. The bottom connecting structure 105 is formed on and electrically connected to the bottom of the reflective structure 1042. The reflective structure 1042 on the bottom surface 101c of the first type of conductive layer 101 can be made of metal. Except for the reflective structure 1042, the components of the micro light emitting diode structure 4002 are the same as the components of the micro light emitting diode structure 4000 illustrated in FIG. 4, and thus the detailed description of these components is not repeated. FIG. 4A The difference between the illustrated embodiment and the embodiment illustrated in FIG. 4 is that the reflective structure 1042 is attached on the bottom surface 101c of the first type of conductive layer 101. The reflective structure 1042 is electrically conductive. The bottom connecting structure 105 is formed on and electrically connected to the bottom of the reflective structure 1042. The reflective structure 1042 on the bottom surface 101c of the first type of conductive layer 101 can be made of metal. Except for the reflective structure 1042, the components of the micro light emitting diode structure 4002 are the same as the components of the micro light emitting diode structure 4000 illustrated in FIG. 4, and thus the detailed description of these components is not repeated.

[0136] Third variant of the fourth embodiment

[0137] FIG. 4D FIG. 4 is a cross-sectional view of a micro light emitting diode structure 4003 according to a third variant of the fourth embodiment of the present disclosure. FIG. 4D The difference between the illustrated embodiment and the embodiment illustrated in FIG. 4 is that the reflective structure 1042 is attached on the bottom surface 101c of the first type of conductive layer 101. The reflective structure 1042 is electrically conductive. The bottom connecting structure 105 is formed on and electrically connected to the bottom of the reflective structure 1042. The reflective structure 1042 on the bottom surface 101c of the first type of conductive layer 101 can be made of metal. Except for the reflective structure 1042, the components of the micro light emitting diode structure 4002 are the same as the components of the micro light emitting diode structure 4000 illustrated in FIG. 4, and thus the detailed description of these components is not repeated. FIG. 4A The difference between the illustrated embodiment and the embodiment illustrated in FIG. 4 is that the reflective structure 1042 is attached on the bottom surface 101c of the first type of conductive layer 101. The reflective structure 1042 is electrically conductive. The bottom connecting structure 105 is formed on and electrically connected to the bottom of the reflective structure 1042. The reflective structure 1042 on the bottom surface 101c of the first type of conductive layer 101 can be made of metal. Except for the reflective structure 1042, the components of the micro light emitting diode structure 4002 are the same as the components of the micro light emitting diode structure 4000 illustrated in FIG. 4, and thus the detailed description of these components is not repeated. FIG. 4D The difference between the illustrated embodiment and the embodiment illustrated in FIG. 4 is that the reflective structure 1042 is attached on the bottom surface 101c of the first type of conductive layer 101. The reflective structure 1042 is electrically conductive. The bottom connecting structure 105 is formed on and electrically connected to the bottom of the reflective structure 1042. The reflective structure 1042 on the bottom surface 101c of the first type of conductive layer 101 can be made of metal. Except for the reflective structure 1042, the components of the micro light emitting diode structure 4002 are the same as the components of the micro light emitting diode structure 4000 illustrated in FIG. 4, and thus the detailed description of these components is not repeated. FIG. 4A The difference between the illustrated embodiment and the embodiment illustrated in FIG. 4 is that the reflective structure 1042 is attached on the bottom surface 101c of the first type of conductive layer 101. The reflective structure 1042 is electrically conductive. The bottom connecting structure 105 is formed on and electrically connected to the bottom of the reflective structure 1042. The reflective structure 1042 on the bottom surface 101c of the first type of conductive layer 101 can be made of metal. Except for the reflective structure 1042, the components of the micro light emitting diode structure 4002 are the same as the components of the micro light emitting diode structure 4000 illustrated in FIG. 4, and thus the detailed description of these components is not repeated.

[0138] Fifth embodiment

[0139] FIG. 5A FIG. 4 is a cross-sectional view of a micro light emitting diode structure 4003 according to a third variant of the fourth embodiment of the present disclosure. FIG. 5A The difference between the illustrated embodiment and the embodiment illustrated in FIG. 4 is that the reflective structure 1042 is attached on the bottom surface 101c of the first type of conductive layer 101. The reflective structure 1042 is electrically conductive. The bottom connecting structure 105 is formed on and electrically connected to the bottom of the reflective structure 1042. The reflective structure 1042 on the bottom surface 101c of the first type of conductive layer 101 can be made of metal. Except for the reflective structure 1042, the components of the micro light emitting diode structure 4002 are the same as the components of the micro light emitting diode structure 4000 illustrated in FIG. 4, and thus the detailed description of these components is not repeated. FIG. 2A The difference between the illustrated embodiment and the embodiment illustrated in FIG. 4 is that the reflective structure 1042 is attached on the bottom surface 101c of the first type of conductive layer 101. The reflective structure 1042 is electrically conductive. The bottom connecting structure 105 is formed on and electrically connected to the bottom of the reflective structure 1042. The reflective structure 1042 on the bottom surface 101c of the first type of conductive layer 101 can be made of metal. Except for the reflective structure 1042, the components of the micro light emitting diode structure 4002 are the same as the components of the micro light emitting diode structure 4000 illustrated in FIG. 4, and thus the detailed description of these components is not repeated. FIG. 5A The difference between the illustrated embodiment and the embodiment illustrated in FIG. 4 is that the reflective structure 1042 is attached on the bottom surface 101c of the first type of conductive layer 101. The reflective structure 1042 is electrically conductive. The bottom connecting structure 105 is formed on and electrically connected to the bottom of the reflective structure 1042. The reflective structure 1042 on the bottom surface 101c of the first type of conductive layer 101 can be made of metal. Except for the reflective structure 1042, the components of the micro light emitting diode structure 4002 are the same as the components of the micro light emitting diode structure 4000 illustrated in FIG. 4, and thus the detailed description of these components is not repeated. FIG. 2A The difference between the illustrated embodiment and the embodiment illustrated in FIG. 4 is that the reflective structure 1042 is attached on the bottom surface 101c of the first type of conductive layer 101. The reflective structure 1042 is electrically conductive. The bottom connecting structure 105 is formed on and electrically connected to the bottom of the reflective structure 1042. The reflective structure 1042 on the bottom surface 101c of the first type of conductive layer 101 can be made of metal. Except for the reflective structure 1042, the components of the micro light emitting diode structure 4002 are the same as the components of the micro light emitting diode structure 4000 illustrated in FIG. 4, and thus the detailed description of these components is not repeated.

[0140] First variant of the fifth embodiment

[0141] FIG. 5B A cross-sectional view of a micro light emitting diode structure 5001 according to a first variant of the fifth embodiment of the present disclosure. FIG. 5B The illustrated embodiment differs from FIG. 5A The illustrated embodiment differs from the illustrated embodiment of the micro light emitting diode structure 5000 in that the sidewall surface 101b of the first type conductive layer 101 is curved, and the reflective structure 1041 formed on the sidewall surface 101b of the first type conductive layer 101 has a curved surface 104a. Except for the reflective structure 1041, the components of the micro light emitting diode structure 5001 are the same as those of the micro light emitting diode structure 5000 illustrated in FIG. 5A, and thus the detailed description of these components is not repeated. FIG. 5B The components of the micro light emitting diode structure 5001 are the same as those of the micro light emitting diode structure 5000 illustrated in FIG. 5A, and thus the detailed description of these components is not repeated. FIG. 5A The components of the micro light emitting diode structure 5000 are the same as those of the micro light emitting diode structure 5000 illustrated in FIG. 5A, and thus the detailed description of these components is not repeated.

[0142] Second variant of the fifth embodiment

[0143] FIG. 5C A cross-sectional view of a micro light emitting diode structure 5002 according to a second variant of the fifth embodiment of the present disclosure. FIG. 5C The illustrated embodiment differs from FIG. 5A The illustrated embodiment differs from the illustrated embodiment of the micro light emitting diode structure 5001 in that the reflective structure 1042 is attached on the bottom surface 101c of the first type conductive layer 101. The reflective structure 1042 is electrically conductive. The bottom connecting structure 105 is formed at the bottom of the reflective structure 1042 and is electrically connected with the bottom of the reflective structure 1042. The reflective structure 1042 on the bottom surface 101c of the first type conductive layer 101 is made of metal. Except for the reflective structure 1042, the components of the micro light emitting diode structure 5002 are the same as those of the micro light emitting diode structure 5001 illustrated in FIG. 5B, and thus the detailed description of these components is not repeated. FIG. 5C The components of the micro light emitting diode structure 5002 are the same as those of the micro light emitting diode structure 5001 illustrated in FIG. 5B, and thus the detailed description of these components is not repeated. FIG. 5A The components of the micro light emitting diode structure 5000 are the same as those of the micro light emitting diode structure 5000 illustrated in FIG. 5A, and thus the detailed description of these components is not repeated.

[0144] Third variant of the fifth embodiment

[0145] FIG. 5D A cross-sectional view of a micro light emitting diode structure 5003 according to a third variant of the fifth embodiment of the present disclosure. FIG. 5D The illustrated embodiment differs from FIG. 5A The illustrated embodiment differs from the illustrated embodiment of the micro light emitting diode structure 5002 in that the reflective structure 1043 is attached on both the sidewall surface 101b and the bottom surface 101c of the first type conductive layer 101. The reflective structure 1043 is electrically conductive. The bottom connecting structure 105 is formed at the bottom of the reflective structure 1043 and is electrically connected with the reflective structure 1043. Except for the reflective structure 1042, the components of the micro light emitting diode structure 5003 are the same as those of the micro light emitting diode structure 5002 illustrated in FIG. 5C, and thus the detailed description of these components is not repeated. FIG. 5D The components of the micro light emitting diode structure 5003 are the same as those of the micro light emitting diode structure 5002 illustrated in FIG. 5C, and thus the detailed description of these components is not repeated. FIG. 5AThe components of micro-LED structure 5000 are the same as those of micro-LED structure 1000, 1001, …, 3003, and thus the detailed description of these components is not repeated.

[0146] Sixth Embodiment

[0147] FIG. 6A A cross-sectional view of a micro-LED chip 6000 according to a sixth embodiment of the present disclosure. The micro-LED chip 6000 can include a plurality of micro-LEDs. At least one micro-LED included in the micro-LED chip 6000 can have any one of the micro-LED structures 1000, 1001, …, 3003 described above.

[0148] In FIG. 6A In the illustrated embodiment, the micro-LED chip 6000 includes two micro-LEDs 610 and 620. The micro-LEDs 610 and 620 each include the micro-LED structure 1000 described in FIG. 1A The micro-LED structure 1000 of the first embodiment illustrated. In the following description and FIG. 6A In FIG. 6A The micro-LEDs 610 and 620 in

[0149] As FIG. 6A illustrated, the micro-LEDs 610(1000) and 620(1000) each include a first type of conductive layer 101, a second type of conductive layer 102 stacked on the first type of conductive layer 101, and a light-emitting layer 103 formed between the first type of conductive layer 101 and the second type of conductive layer 102. The light-emitting layer 103 is formed continuously across the entire micro-LED chip 6000. The first and second micro-LEDs 610(1000) and 620(1000) share the light-emitting layer 103. The light-emitting layer 103 extends along a horizontal plane away from a top edge 101a of the first type of conductive layer 101 and a bottom edge 102a of the second type of conductive layer 102, such that an edge 103a of the light-emitting layer 103 does not contact the top edge 101a of the first type of conductive layer 101 and the bottom edge 102a of the second type of conductive layer 102. The bottom edge 102a of the second type of conductive layer 102 is aligned with the top edge 101a of the first type of conductive layer 101.

[0150] As FIG. 6AAs shown, each of micro-LEDs 610 (1000) and 620 (1000) also includes a top spacer 107 formed on the top surface 103b of the light-emitting layer 103, and a bottom spacer 108 formed on the bottom surface 103c of the light-emitting layer 103. Both the top spacer 107 and the bottom spacer 108 are continuously formed on the entire micro-LED chip 6000 and are shared by the first and second micro-LEDs 610 (1000) and 620 (1000). The edge 107a of the top spacer 107 is aligned with the edge 103a of the light-emitting layer 103. The edge 108a of the bottom spacer 108 is aligned with the edge 103a of the light-emitting layer 103.

[0151] like FIG. 6A As shown, the micro-LEDs 610 (1000) and 620 (1000) each also include a reflective structure 104 surrounding the first type conductive layer 101, a bottom connection structure 105 formed under the first type conductive layer 101, a connection pad 106 formed in the substrate 110, an isolation layer 109 surrounding the first type conductive layer 101 and under the light-emitting layer 103, a substrate 110 under the first type conductive layer 101 and electrically connected to the bottom connection structure 105 through the connection pad 106, and a microlens 111 formed on the second type conductive layer 102 and on the top surface 107b of the top spacer 107.

[0152] In addition to the light emitting layer 103, the top spacer 107 and the bottom spacer 108 continuously formed on the entire micro-LED chip 6000 and shared by the first and second micro-LEDs 610 (1000) and 620 (1000), FIG. 6A The components of the first and second micro-LEDs 610 (1000) and 620 (1000) of the sixth embodiment are shown. FIG. 1A The components of the micro-LED structure 1000 of the first embodiment are the same, and therefore, detailed descriptions of these components will not be repeated.

[0153] First variant of the sixth embodiment

[0154] FIG. 6B is a cross-sectional view of a micro light emitting diode chip 6001 according to a first variation of the sixth embodiment of the present disclosure. FIG. 6B The first variant of the sixth embodiment is shown with FIG. 6A The difference of the sixth embodiment is that the micro-LEDs 610 and 620 of the micro-LED chip 6001 each include the FIG. 1B The micro light-emitting diode structure 1001 of the first variant of the first embodiment. FIG. 6BThe micro-LEDs 610 and 620 of the micro-LED chip 6001 are also referred to as micro-LEDs 610(1001) and 620(1001).

[0155] More specifically, as shown in FIG. 10A, the sidewall surface 101b of the first type of conductive layer 101 is curved, and the reflective structure 1041 formed on the sidewall surface 101b of the first type of conductive layer 101 has a curved surface 104a. FIG. 6B FIG. 6B The components of the micro-LED chip 6002 are the same as those of the micro-LED chip 6000 shown in FIG. 9, and thus the detailed description of these components is not repeated. FIG. 6A

[0156] Second variant of the sixth embodiment

[0157] FIG. 6C A cross-sectional view of a micro-LED chip 6002 according to the second variant of the sixth embodiment of the present disclosure. FIG. 6C The second variant of the sixth embodiment shown in FIG. 10A is different from the sixth embodiment shown in FIG. 9 in that the micro-LEDs 610 and 620 of the micro-LED chip 6002 each include the micro-LED structure 1002 described in the second variant of the first embodiment. FIG. 6A FIG. 1C The micro-LEDs 610 and 620 of the micro-LED chip 6002 are also referred to as micro-LEDs 610(1002) and 620(1002). FIG. 6C

[0158] More specifically, as shown in FIG. 10A, the sidewall surface 101b of the first type of conductive layer 101 is curved, and the reflective structure 1041 formed on the sidewall surface 101b of the first type of conductive layer 101 has a curved surface 104a. FIG. 6C FIG. 6C The components of the micro-LED chip 6002 are the same as those of the micro-LED chip 6000 shown in FIG. 9, and thus the detailed description of these components is not repeated. FIG. 6A

[0159] Third variant of the sixth embodiment

[0160] FIG. 6D A cross-sectional view of a micro-LED chip 6003 according to the third variant of the sixth embodiment of the present disclosure. FIG. 6D The third variant of the sixth embodiment shown in FIG. 10B is different from the sixth embodiment shown in FIG. 9 in that the micro-LEDs 610 and 620 of the micro-LED chip 6003 each include the micro-LED structure 1003 described in the third variant of the first embodiment. FIG. 6A ​​​​​​The illustrated embodiment differs from the embodiment illustrated in FIG. 1D micro-LEDs 610 and 620 of the micro-LED chip 6003 are referred to as micro-LEDs 610(1003) and 620(1003). FIG. 6C micro-LEDs 610 and 620 of the micro-LED chip 6003 are referred to as micro-LEDs 610(1003) and 620(1003).

[0161] More specifically, as illustrated in FIG. 6D The reflective structure 1043 is electrically conductive. A bottom connection structure 105 is formed at the bottom of the reflective structure 1043 and is electrically connected with the reflective structure 1043. In addition to the reflective structure 1043, the components of the micro-LED chip 6003 are the same as those of the micro-LED chip 6000 illustrated in FIG. 6D The components of the micro-LED chip 6003 are the same as those of the micro-LED chip 6000 illustrated in FIG. 6A The components of the micro-LED chip 6004 are the same as those of the micro-LED chip 6000 illustrated in

[0162] A fourth variant of the sixth embodiment

[0163] FIG. 6E is a cross-sectional view of a micro-LED chip 6004 according to the fourth variant of the sixth embodiment of the present disclosure. FIG. 6E The illustrated embodiment differs from the embodiment illustrated in FIG. 6A The illustrated embodiment differs from the embodiment illustrated in FIG. 2A The illustrated embodiment differs from the embodiment illustrated in FIG. 6E micro-LEDs 610 and 620 of the micro-LED chip 6003 are referred to as micro-LEDs 610(2000) and 620(2000).

[0164] More specifically, as illustrated in FIG. 6E The bottom edge 102a of the second type of conductive layer 102 is not aligned with the top edge 101a of the first type of conductive layer 101. Instead, the profile of the second type of conductive layer 102 vertically projected on the top surface 101d of the first type of conductive layer 101 is enclosed by the top edge 101a of the first type of conductive layer 101. FIG. 6E The components of the micro-LED chip 6004 are the same as those of the micro-LED chip 6000 illustrated in FIG. 6A The components of the micro-LED chip 6004 are the same as those of the micro-LED chip 6000 illustrated in

[0165] In FIG. 6EIn the illustrated embodiment, the micro-LEDs 610 and 620 of the micro-LED chip 6004 each include the components described in FIG. 2A The micro-LED structure 2000 of the second embodiment. Alternatively, in other embodiments, the micro-LEDs 610 and 620 of the micro-LED chip 6004 may each include the respective FIG. 2B 、 2C or 2D micro light emitting diode structure 2001 , 2002 or 2003 of the first, second or third variant of the second embodiment.

[0166] Fifth variant of the sixth embodiment

[0167] FIG. 6F is a cross-sectional view of a micro light emitting diode chip 6005 according to a fifth variation of the sixth embodiment of the present disclosure. FIG. 6F The embodiment shown is FIG. 6A The embodiment shown differs in that the micro-LEDs 610 and 620 of the micro-LED chip 6005 each include the FIG. 3A The micro-LED structure 3000 of the second embodiment. FIG. 6F The micro-LEDs 610 and 620 are referred to as micro-LEDs 610 ( 3000 ) and 620 ( 3000 ).

[0168] More specifically, if FIG. 6F As shown, bottom edge 102a of second type conductive layer 102 is not aligned with top edge 101a of first type conductive layer 101. Instead, the outline of first type conductive layer 101 vertically projected onto bottom surface 102b of second type conductive layer 102 is surrounded by bottom edge 102a of second type conductive layer 102. FIG. 6F The components of the micro LED chip 6005 of the embodiment are FIG. 6A The components of the micro LED chip 6000 of the embodiment are the same, and therefore detailed descriptions of these components will not be repeated.

[0169] exist FIG. 6F In the illustrated embodiment, the micro-LEDs 610 and 620 of the micro-LED chip 6005 each include the components described in FIG. 3A Alternatively, in other embodiments, the micro-LEDs 610 and 620 of the micro-LED chip 6005 may each include the respective components described in FIG. 3B 、 3C or 3D micro light emitting diode structure 3001 , 3002 or 3003 of the first, second or third variant of the third embodiment.

[0170] Seventh Implementation Plan

[0171] FIG. 7 FIG2 is a cross-sectional view of a micro-LED chip 7000 according to a seventh embodiment of the present disclosure. Micro-LED chip 7000 may include a plurality of micro-LEDs. At least one micro-LED included in micro-LED chip 7000 may have any of the aforementioned micro-LED structures 1000, 1001, ..., 3003.

[0172] Icon FIG. 7 The micro LED chip 7000 and the icon are FIG. 6A The difference between the micro-LED chip 6000 and the micro-LED chip 7000 is that the micro-LED chip 7000 further includes an isolation structure 112 formed between adjacent micro-LEDs 610 (1000) and 620 (1000). The isolation structure 112 can be made of a light-absorbing material, which can be a dielectric material including, for example, doped silicon dioxide or silicon nitride. In other embodiments, the isolation structure 112 can be made of a reflective material, such as metal. The isolation structure 112 is configured to electrically isolate the adjacent micro-LEDs 610 (1000) and 620 (1000) from each other.

[0173] At least a portion of the isolation structure 112 is formed in the light emitting layer 103. FIG. 7 In the illustrated embodiment, the top surface 112a of the isolation structure 112 is aligned with the top surface 103b of the light-emitting layer 103, and the bottom surface 112b of the isolation structure 112 is aligned with the bottom surface 103c of the light-emitting layer 103. The isolation structure 112 can be formed to surround at least one of the micro-LEDs 610 (1000) and 620 (1000). Additionally or alternatively, at least a portion of the isolation structure 112 can be formed in the top spacer 107 or the bottom spacer 108.

[0174] In addition to the isolation structure, FIG. 7 The components of the micro LED chip 7000 of the embodiment are FIG. 6A The components of the micro LED chip 6000 of the embodiment are the same, and therefore detailed descriptions of these components will not be repeated.

[0175] Eighth Implementation Plan

[0176] FIG. 8A FIG is a cross-sectional view of a micro LED chip 8000 according to an eighth embodiment of the present disclosure. FIG. 8A The micro LED chip 8000 and the icon are FIG. 7The micro light emitting diode chip 7000 differs from the micro light emitting diode chip 6000 in that the bottom surface 112b of the isolation structure 112 is below the light emitting layer 103. More specifically, as shown in FIG. 7B, the bottom surface 112b of the isolation structure 112 is below the bottom surface 103c of the light emitting layer 103 and above the bottom surface 108b of the bottom spacer 108. Except for the isolation structure 112, the components of the micro light emitting diode chip 7000 are the same as those of the micro light emitting diode chip 6000, and thus a detailed description of these components will not be repeated. FIG. 8A The micro light emitting diode chip 7000 differs from the micro light emitting diode chip 6000 in that the bottom surface 112b of the isolation structure 112 is below the light emitting layer 103. More specifically, as shown in FIG. 7B, the bottom surface 112b of the isolation structure 112 is below the bottom surface 103c of the light emitting layer 103 and above the bottom surface 108b of the bottom spacer 108. Except for the isolation structure 112, the components of the micro light emitting diode chip 7000 are the same as those of the micro light emitting diode chip 6000, and thus a detailed description of these components will not be repeated. FIG. 8A The micro light emitting diode chip 8000 differs from the micro light emitting diode chip 7000 in that the bottom surface 112b of the isolation structure 112 is aligned with the bottom surface 108b of the bottom spacer 108. Except for the isolation structure 112, the components of the micro light emitting diode chip 8000 are the same as those of the micro light emitting diode chip 7000, and thus a detailed description of these components will not be repeated. FIG. 7 The micro light emitting diode chip 8000 differs from the micro light emitting diode chip 7000 in that the bottom surface 112b of the isolation structure 112 is aligned with the bottom surface 108b of the bottom spacer 108. Except for the isolation structure 112, the components of the micro light emitting diode chip 8000 are the same as those of the micro light emitting diode chip 7000, and thus a detailed description of these components will not be repeated.

[0177] First variant of the eighth embodiment

[0178] FIG. 8B is a cross-sectional view of a micro light emitting diode chip 8001 according to a first variant of the eighth embodiment of the present disclosure. The micro light emitting diode chip 8001 differs from the micro light emitting diode chip 8000 in that the bottom surface 112b of the isolation structure 112 is below the bottom surface 108b of the bottom spacer 108 and is disposed in the isolation layer 109. Except for the isolation structure 112, the components of the micro light emitting diode chip 8001 are the same as those of the micro light emitting diode chip 8000, and thus a detailed description of these components will not be repeated. FIG. 8B The micro light emitting diode chip 8001 differs from the micro light emitting diode chip 8000 in that the bottom surface 112b of the isolation structure 112 is below the bottom surface 108b of the bottom spacer 108 and is disposed in the isolation layer 109. Except for the isolation structure 112, the components of the micro light emitting diode chip 8001 are the same as those of the micro light emitting diode chip 8000, and thus a detailed description of these components will not be repeated. FIG. 8A The micro light emitting diode chip 8001 differs from the micro light emitting diode chip 8000 in that the bottom surface 112b of the isolation structure 112 is below the bottom surface 108b of the bottom spacer 108 and is disposed in the isolation layer 109. Except for the isolation structure 112, the components of the micro light emitting diode chip 8001 are the same as those of the micro light emitting diode chip 8000, and thus a detailed description of these components will not be repeated. FIG. 8B The micro light emitting diode chip 8001 differs from the micro light emitting diode chip 8000 in that the bottom surface 112b of the isolation structure 112 is below the bottom surface 108b of the bottom spacer 108 and is disposed in the isolation layer 109. Except for the isolation structure 112, the components of the micro light emitting diode chip 8001 are the same as those of the micro light emitting diode chip 8000, and thus a detailed description of these components will not be repeated. FIG. 8A The micro light emitting diode chip 8001 differs from the micro light emitting diode chip 8000 in that the bottom surface 112b of the isolation structure 112 is below the bottom surface 108b of the bottom spacer 108 and is disposed in the isolation layer 109. Except for the isolation structure 112, the components of the micro light emitting diode chip 8001 are the same as those of the micro light emitting diode chip 8000, and thus a detailed description of these components will not be repeated.

[0179] Second variant of the eighth embodiment

[0180] FIG. 8C is a cross-sectional view of a micro light emitting diode chip 8002 according to a second variant of the eighth embodiment of the present disclosure. The micro light emitting diode chip 8002 differs from the micro light emitting diode chip 8000 in that the bottom surface 112b of the isolation structure 112 is below the bottom surface 108b of the bottom spacer 108 and is disposed in the isolation layer 109. Except for the isolation structure 112, the components of the micro light emitting diode chip 8002 are the same as those of the micro light emitting diode chip 8000, and thus a detailed description of these components will not be repeated. FIG. 8C The micro light emitting diode chip 8002 differs from the micro light emitting diode chip 8000 in that the bottom surface 112b of the isolation structure 112 is below the bottom surface 108b of the bottom spacer 108 and is disposed in the isolation layer 109. Except for the isolation structure 112, the components of the micro light emitting diode chip 8002 are the same as those of the micro light emitting diode chip 8000, and thus a detailed description of these components will not be repeated. FIG. 8A The micro light emitting diode chip 8002 differs from the micro light emitting diode chip 8000 in that the bottom surface 112b of the isolation structure 112 is below the bottom surface 108b of the bottom spacer 108 and is disposed in the isolation layer 109. Except for the isolation structure 112, the components of the micro light emitting diode chip 8002 are the same as those of the micro light emitting diode chip 8000, and thus a detailed description of these components will not be repeated. FIG. 8C The micro light emitting diode chip 8002 differs from the micro light emitting diode chip 8000 in that the bottom surface 112b of the isolation structure 112 is below the bottom surface 108b of the bottom spacer 108 and is disposed in the isolation layer 109. Except for the isolation structure 112, the components of the micro light emitting diode chip 8002 are the same as those of the micro light emitting diode chip 8000, and thus a detailed description of these components will not be repeated. FIG. 8A The micro light emitting diode chip 8002 differs from the micro light emitting diode chip 8000 in that the bottom surface 112b of the isolation structure 112 is below the bottom surface 108b of the bottom spacer 108 and is disposed in the isolation layer 109. Except for the isolation structure 112, the components of the micro light emitting diode chip 8002 are the same as those of the micro light emitting diode chip 8000, and thus a detailed description of these components will not be repeated.

[0181] In FIG. 8A to 8CIn the illustrated embodiment, the top surface 112a of the isolation structure 112 has an area equal to the area of the bottom surface 112b of the isolation structure 112. Alternatively, in other embodiments, the top surface 112a of the isolation structure 112 can have an area greater than or less than the area of the bottom surface 112b of the isolation structure 112. Alternatively, in some embodiments, the cross-sectional area of the isolation structure 112 at the interface of the light emitting layer 103 and the bottom spacer 108 or at the bottom surface 108b of the bottom spacer 108 can be greater than the area of the bottom surface 112b of the isolation structure 112.

[0182] Ninth Embodiment

[0183] FIG. 9A is a cross-sectional view of a micro light emitting diode chip 9000 according to a ninth embodiment of the present disclosure. The micro light emitting diode chip 9000 is similar to the micro light emitting diode chip 9000 illustrated in FIG. 9A FIG. 7 The micro light emitting diode chip 9000 illustrated in FIG. 9A differs from the micro light emitting diode chip 9000 illustrated in FIG. 9A by the top surface 112a of the isolation structure 112 being above the light emitting layer 103. More specifically, as shown in FIG. 7 the top surface 112a of the isolation structure 112 is above the top surface 103b of the light emitting layer 103 and below the top surface 107b of the top spacer 107. The components of the micro light emitting diode chip 9000 illustrated in

[0184] First Variation of the Ninth Embodiment

[0185] FIG. 9B is a cross-sectional view of a micro light emitting diode chip 9001 according to a first variation of the ninth embodiment of the present disclosure. The micro light emitting diode chip 9001 is similar to the micro light emitting diode chip 9000 illustrated in FIG. 9B FIG. 9A The micro light emitting diode chip 9001 illustrated in FIG. 9B differs from the micro light emitting diode chip 9000 illustrated in FIG. 9A by the top surface 112a of the isolation structure 112 being aligned with the top surface 107b of the top spacer 107. The components of the micro light emitting diode chip 9001 illustrated in

[0186] Second Variation of the Ninth Embodiment

[0187] FIG. 9C is a cross-sectional view of a micro light emitting diode chip 9002 according to a second variation of the ninth embodiment of the present disclosure. The micro light emitting diode chip 9002 is similar to the micro light emitting diode chip 9000 illustrated in FIG. 9C ​​The micro LED chip 9002 and the icon are FIG. 9A The difference between the micro LED chip 9000 and the micro LED chip 9000 is that the top surface 112a of the isolation structure 112 is above the top surface 107b of the top spacer 107 and between adjacent second type conductive layers 102. FIG. 9C The components of the micro-LED chip 9002 are shown in FIG. FIG. 9A The components of the micro LED chip 9000 are the same, so the detailed description of these components will not be repeated.

[0188] exist FIG. 9A to 9C In the illustrated embodiment, the area of ​​the top surface 112a of the isolation structure 112 is equal to the area of ​​the bottom surface 112b of the isolation structure 112. Alternatively, in other embodiments, the area of ​​the top surface 112a of the isolation structure 112 may be larger or smaller than the area of ​​the bottom surface 112b of the isolation structure 112. However, alternatively, in some embodiments, the cross-sectional area of ​​the isolation structure 112 at the top surface 103b of the light-emitting layer 103 or at the top surface 107b of the top spacer 107 may be larger than the area of ​​the bottom surface 112b of the isolation structure 112.

[0189] Tenth Implementation Plan

[0190] FIG. 10A FIG is a cross-sectional view of a micro light-emitting diode chip 10000 according to the tenth embodiment of the present disclosure. FIG. 10A The micro LED chip 10000 and the icon are FIG. 7 The difference between the micro LED chip 7000 and the micro LED chip 7000 is that the top surface 112a of the isolation structure 112 is above the light emitting layer 103, and the bottom surface 112b of the isolation structure 112 is below the light emitting layer 103. More specifically, FIG. 10A As shown, the top surface 112a of the isolation structure 112 is above the top surface 103b of the light emitting layer 103 and below the top surface 107b of the top spacer 107, and the bottom surface 112b of the isolation structure 112 is below the bottom surface 103c of the light emitting layer 103 and above the bottom surface 108b of the bottom spacer 108. FIG. 10A The components of the micro light emitting diode chip 10000 are shown in FIG. FIG. 7 The components of the micro LED chip 7000 are the same, so the detailed description of these components will not be repeated.

[0191] First variant of the tenth embodiment

[0192] FIG. 10B FIG1 is a cross-sectional view of a micro light-emitting diode chip 10001 according to a first variant of the tenth embodiment of the present disclosure. FIG. 10BThe micro-LED chip 10001 and the icon are FIG. 10A The difference between the micro LED chip 10000 and the micro LED chip 10000 is that the bottom surface 112b of the isolation structure 112 is aligned with the bottom surface 108b of the bottom spacer 108. FIG. 10B The components of the micro light emitting diode chip 10001 are shown in FIG. FIG. 10A The components of the micro LED chip 10000 are the same, so the detailed description of these components will not be repeated.

[0193] Second variant of the tenth embodiment

[0194] FIG. 10C FIG1 is a cross-sectional view of a micro light-emitting diode chip 10002 according to a second variant of the tenth embodiment of the present disclosure. FIG. 10C The micro-LED chip 10002 and the icon are FIG. 10A The difference between the micro LED chip 10000 and the micro LED chip 10000 is that the bottom surface 112b of the isolation structure 112 is below the bottom surface 108b of the bottom spacer 108 and is disposed in the isolation layer 109. In addition to the isolation structure 112, the bottom surface 112b of the isolation structure 112 is below the bottom surface 108b of the bottom spacer 108 and is disposed in the isolation layer 109. FIG. 10C The components of the micro light emitting diode chip 10002 are shown in FIG. FIG. 10A The components of the micro LED chip 10000 are the same, so the detailed description of these components will not be repeated.

[0195] exist FIG. 10A to 10C In the illustrated embodiment, the area of ​​the top surface 112a of the isolation structure 112 is equal to the area of ​​the bottom surface 112b of the isolation structure 112. Alternatively, in other embodiments, the area of ​​the top surface 112a of the isolation structure 112 may be larger or smaller than the area of ​​the bottom surface 112b of the isolation structure 112. However, alternatively, in some embodiments, the cross-sectional area of ​​the isolation structure 112 at the bottom surface 103c of the light-emitting layer 103 or at the bottom surface 108b of the bottom spacer 108 may be larger than the area of ​​the bottom surface 112b of the isolation structure 112.

[0196] Eleventh Implementation Plan

[0197] FIG. 11A FIG is a cross-sectional view of a micro light-emitting diode chip 11000 according to the eleventh embodiment of the present disclosure. FIG. 11A The micro-LED chip 11000 and the icon are FIG. 7 The difference between the micro LED chip 7000 and the micro LED chip 7000 is that the top surface 112a of the isolation structure 112 is aligned with the top surface 107b of the top spacer 107, and the bottom surface 112b of the isolation structure 112 is below the light emitting layer 103. More specifically, in FIG. 11AIn the illustrated embodiment, the bottom surface 112b of the isolation structure 112 is below the bottom surface 103c of the light emitting layer 103 and above the bottom surface 108b of the bottom spacer 108. Except for the isolation structure 112, the components of the micro light emitting diode chip 11000 are the same as the components of the micro light emitting diode chip 11000 illustrated in FIG. 11A The components of the micro light emitting diode chip 11000 are the same as the components of the micro light emitting diode chip 7000 illustrated in FIG. 7 Therefore, the detailed description of these components is not repeated.

[0198] First variant of the eleventh embodiment

[0199] FIG. 11B is a cross-sectional view of a micro light emitting diode chip 11001 according to a first variant of the eleventh embodiment of the present disclosure. The micro light emitting diode chip 11001 is different from the micro light emitting diode chip 11000 illustrated in FIG. 11B by the fact that the bottom surface 112b of the isolation structure 112 is aligned with the bottom surface 108b of the bottom spacer 108. Except for the isolation structure 112, the components of the micro light emitting diode chip 11001 are the same as the components of the micro light emitting diode chip 11000 illustrated in FIG. 11A Therefore, the detailed description of these components is not repeated. FIG. 11A FIG. 11A First variant of the eleventh embodiment

[0200] Second variant of the eleventh embodiment

[0201] FIG. 11C is a cross-sectional view of a micro light emitting diode chip 11002 according to a second variant of the eleventh embodiment of the present disclosure. The micro light emitting diode chip 11002 is different from the micro light emitting diode chip 11000 illustrated in FIG. 11C by the fact that the bottom surface 112b of the isolation structure 112 is below the bottom surface 108b of the bottom spacer 108 and is disposed in the isolation layer 109. Except for the isolation structure 112, the components of the micro light emitting diode chip 11002 are the same as the components of the micro light emitting diode chip 11000 illustrated in FIG. 11A Therefore, the detailed description of these components is not repeated. FIG. 11C FIG. 11A In

[0202] is a cross-sectional view of a micro light emitting diode chip 11002 according to a second variant of the eleventh embodiment of the present disclosure. The micro light emitting diode chip 11002 is different from the micro light emitting diode chip 11000 illustrated in FIG. 11A to 11C ​​In the illustrated embodiment, the top surface 112a of the isolation structure 112 has an area equal to the area of the bottom surface 112b of the isolation structure 112. Alternatively, in other embodiments, the top surface 112a of the isolation structure 112 can have an area greater than or less than the area of the bottom surface 112b of the isolation structure 112. Alternatively, in some embodiments, the cross-sectional area of the isolation structure 112 at the bottom surface 103c of the light emitting layer 103 or at the bottom surface 108b of the bottom spacer 108 can be greater than the area of the bottom surface 112b of the isolation structure 112.

[0203] Eleventh Embodiment, Third Variant

[0204] FIG. 11D is a cross-sectional view of a micro light emitting diode chip 11003 according to a third variant of the eleventh embodiment of the present disclosure. The micro light emitting diode chip 11003 is similar to the micro light emitting diode chip 11001 illustrated in FIG. 11D is a cross-sectional view of a micro light emitting diode chip 11003 according to a third variant of the eleventh embodiment of the present disclosure. The micro light emitting diode chip 11003 is similar to the micro light emitting diode chip 11001 illustrated in FIG. 11B is a cross-sectional view of a micro light emitting diode chip 11003 according to a third variant of the eleventh embodiment of the present disclosure. The micro light emitting diode chip 11003 is similar to the micro light emitting diode chip 11001 illustrated in FIG. 11D is a cross-sectional view of a micro light emitting diode chip 11003 according to a third variant of the eleventh embodiment of the present disclosure. The micro light emitting diode chip 11003 is similar to the micro light emitting diode chip 11001 illustrated in FIG. 11B is a cross-sectional view of a micro light emitting diode chip 11003 according to a third variant of the eleventh embodiment of the present disclosure. The micro light emitting diode chip 11003 is similar to the micro light emitting diode chip 11001 illustrated in

[0205] Twelfth Embodiment

[0206] FIG. 12A is a cross-sectional view of a micro light emitting diode chip 12000 according to a twelfth embodiment of the present disclosure. The micro light emitting diode chip 12000 is similar to the micro light emitting diode chip 7000 illustrated in FIG. 12A is a cross-sectional view of a micro light emitting diode chip 12000 according to a twelfth embodiment of the present disclosure. The micro light emitting diode chip 12000 is similar to the micro light emitting diode chip 7000 illustrated in FIG. 7 is a cross-sectional view of a micro light emitting diode chip 12000 according to a twelfth embodiment of the present disclosure. The micro light emitting diode chip 12000 is similar to the micro light emitting diode chip 7000 illustrated in FIG. 12A is a cross-sectional view of a micro light emitting diode chip 12000 according to a twelfth embodiment of the present disclosure. The micro light emitting diode chip 12000 is similar to the micro light emitting diode chip 7000 illustrated in FIG. 12A is a cross-sectional view of a micro light emitting diode chip 12000 according to a twelfth embodiment of the present disclosure. The micro light emitting diode chip 12000 is similar to the micro light emitting diode chip 7000 illustrated in FIG. 7 is a cross-sectional view of a micro light emitting diode chip 12000 according to a twelfth embodiment of the present disclosure. The micro light emitting diode chip 12000 is similar to the micro light emitting diode chip 7000 illustrated in

[0207] Twelfth Embodiment, First Variant

[0208] FIG. 12BFIG1 is a cross-sectional view of a micro light-emitting diode chip 12001 according to a first variant of the twelfth embodiment of the present disclosure. FIG. 12B The micro LED chip 12001 and the icon are FIG. 12A The difference between the micro LED chip 12000 and the micro LED chip 12000 is that the bottom surface 112b of the isolation structure 112 is aligned with the bottom surface 108b of the bottom spacer 108. FIG. 12B The components of the micro-LED chip 12001 are shown in FIG. FIG. 12A The components of the micro LED chip 12000 are the same, so the detailed description of these components will not be repeated.

[0209] Second variant of the twelfth embodiment

[0210] FIG. 12C FIG1 is a cross-sectional view of a micro light-emitting diode chip 12002 according to a second variant of the twelfth embodiment of the present disclosure. FIG. 12C The micro LED chip 12002 and the icon are FIG. 12A The difference between the micro LED chip 12000 and the micro LED chip 12000 is that the bottom surface 112b of the isolation structure 112 is below the bottom surface 108b of the bottom spacer 108 and is disposed in the isolation layer 109. In addition to the isolation structure 112, the micro LED chip 12000 shown in FIG. FIG. 12C The components of the micro-LED chip 12002 are shown in FIG. FIG. 12A The components of the micro LED chip 12000 are the same, so the detailed description of these components will not be repeated.

[0211] Third variation of the twelfth embodiment

[0212] Figure 12D FIG1 is a cross-sectional view of a micro light-emitting diode chip 12003 according to a third variant of the twelfth embodiment of the present disclosure. Figure 12D The micro LED chip 12003 and the icon are Figure 12C The difference between the micro LED chip 12002 and the micro LED chip 12002 is that the area of ​​the top surface 112a of the isolation structure 112 is smaller than the area of ​​the bottom surface 112b of the isolation structure 112, and the cross-sectional area 112c of the isolation structure 112 at the bottom surface 103c of the light-emitting layer 103 is larger than the area of ​​the bottom surface 112b of the isolation structure 112. Figure 12D The components of the micro-LED chip 12003 are shown in the figure Figure 12C The components of the micro LED chip 12002 are the same, so the detailed description of these components will not be repeated.

[0213] Thirteenth Implementation Plan

[0214] Figure 13A FIG. 13 is a cross-sectional view of a micro-LED chip 13000 according to a thirteenth embodiment of the present disclosure. The micro-LED chip 13000 can include a plurality of micro-LEDs. At least one micro-LED included in the micro-LED chip 13000 can have any one of the micro-LED structures 1000, 1001, …, 3003 described above.

[0215] FIG. 13 is a cross-sectional view of a micro-LED chip 13000 according to a thirteenth embodiment of the present disclosure. The micro-LED chip 13000 can include a plurality of micro-LEDs. At least one micro-LED included in the micro-LED chip 13000 can have any one of the micro-LED structures 1000, 1001, …, 3003 described above. Figure 13A The micro-LED chip 13000 is different from the micro-LED chip 6000 shown in FIG. 6 in that the micro-LED chip 13000 further includes a metal layer 113 formed over the light emitting layer 103 between the adjacent micro-LEDs 610(1000) and 620(1000). Figure 6A The micro-LED chip 13000 is different from the micro-LED chip 6000 shown in FIG. 6 in that the micro-LED chip 13000 further includes a metal layer 113 formed over the light emitting layer 103 between the adjacent micro-LEDs 610(1000) and 620(1000). Figure 13A In the embodiment shown, the top spacer 107 is formed on the light emitting layer 103, and the metal layer 113 is formed on the top surface 107b of the top spacer 107.

[0216] The lateral dimension value d1 of the metal layer 113 is no more than a distance d2 between the edge 103a of the light emitting layer 103 and the top edge 101a of the first type of conductive layer 101, or the lateral dimension value d1 of the metal layer 113 is no more than a distance d3 between the edge 103a of the light emitting layer 103 and the bottom edge 102a of the second type of conductive layer 102. The lateral dimension value d1 of the metal layer 113 can be between about 2 nanometers and about 10 micrometers.

[0217] In some embodiments, a center point of the metal layer 113 is aligned with center points of the adjacent micro-LEDs 610(1000) and 620(1000). Alternatively, in some embodiments, a center point of the metal layer 113 is closer to one of the micro-LEDs 610(1000) and 620(1000) than to the other one of the micro-LEDs 610(1000) and 620(1000).

[0218] The metal layer 113 can include a high work function metal material having a work function that matches a work function of a material of the light emitting layer 103. The high work function metal material can include at least one of gold, platinum, palladium, beryllium, cobalt, nickel, or tungsten.

[0219] Variations of the thirteenth embodiment

[0220] Figure 13B FIG. 13 is a cross-sectional view of a micro-LED chip 13000 according to a thirteenth embodiment of the present disclosure. The micro-LED chip 13000 can include a plurality of micro-LEDs. At least one micro-LED included in the micro-LED chip 13000 can have any one of the micro-LED structures 1000, 1001, …, 3003 described above.Figure 13B micro-LED chip 13001 differs from the micro-LED chip 13000 shown in Figure 13A The micro-LED chip 13001 differs from the micro-LED chip 13000 shown in

[0221] In the embodiment shown, there are 3 metal layers 113. In other embodiments, the number of metal layers 113 can exceed 3. Figure 13B In the embodiment shown, there are 3 metal layers 113. In other embodiments, the number of metal layers 113 can exceed 3.

[0222] Figure 13A In the embodiment shown, the micro-LEDs 610 and 620 each comprise the micro-LED structure 1000 described in the first embodiment of 13B In the embodiment shown, the micro-LEDs 610 and 620 each comprise the micro-LED structure 1000 described in the first embodiment of Figure 1A In the embodiment shown, the micro-LEDs 610 and 620 each comprise the micro-LED structure 1000 described in the first embodiment of Figure 1B 1C In the embodiment shown, the micro-LEDs 610 and 620 each comprise the micro-LED structure 1000 described in the first embodiment of

[0223] Fourteenth Embodiment

[0224] Figure 14A is a cross-sectional view of a micro-LED chip 14000 according to the fourteenth embodiment of the present disclosure. Figure 14A The embodiment shown differs from the embodiment shown in Figure 13A The micro-LED chip 14000 comprises two micro-LEDs 610(2000) and 620(2000), and each of the micro-LEDs 610(2000) and 620(2000) comprises the micro-LED structure 2000 described in the second embodiment of Figure 2A Figure 14A The other components of the micro-LED chip 14000 of the embodiment are the same as the components of the micro-LED chip 13000 of the Figure 13A The other components of the micro-LED chip 14000 of the embodiment are the same as the components of the micro-LED chip 13000 of the

[0225] Variants of the Fourteenth Embodiment

[0226] Figure 14B is a cross-sectional view of a micro-LED chip 14001 according to a variant of the fourteenth embodiment of the present disclosure. The micro-LED chip 14001 is shown in Figure 14B ​​​micro-LED chip 14001 differs from the micro-LED chip 14000 shown in Figure 14A micro-LED chip 14001 includes a plurality of metal layers 113 formed on the top surface 107b of the top spacer 107 and between adjacent micro-LEDs 610(2000) and 620(2000). Figure 14B The other components of the micro-LED chip 14001 of the embodiment are the same as those of the micro-LED chip 14000 shown in Figure 13A The components of the micro-LED chip 13000 of the embodiment are the same as those of the micro-LED chip 13000 shown in

[0227] In the embodiment shown in Figure 14A and 14B In the embodiment shown, each of the micro-LEDs 610 and 620 includes the micro-LED structure 2000 described in the second embodiment of Figure 2A In alternative embodiments, each of the micro-LEDs 610 and 620 can include any one of the micro-LED structures 2001, 2002, and 2003 described in the first, second, and third variants of the second embodiment of Figure 2B , 2C

[0228] Fifteenth Embodiment

[0229] Figure 15A is a cross-sectional view of a micro-LED chip 15000 according to the fifteenth embodiment of the present disclosure. Figure 15A The embodiment shown in Figure 13A micro-LED chip 15000 includes two micro-LEDs 610(3000) and 620(3000), and each of the micro-LEDs 610(3000) and 620(3000) includes the micro-LED structure 3000 described in the second embodiment of Figure 3A micro-LED structure 3000 of the second embodiment. Figure 15A The other components of the micro-LED chip 15000 of the embodiment are the same as those of the micro-LED chip 15000 shown in Figure 13A The components of the micro-LED chip 13000 of the embodiment are the same as those of the micro-LED chip 13000 shown in

[0230] Variants of the Fifteenth Embodiment

[0231] Figure 15B is a cross-sectional view of a micro-LED chip 15001 according to a variant of the fifteenth embodiment of the present disclosure. The micro-LED chip 15001 is shown in Figure 15B micro-LED chip 15001 differs from the micro-LED chip 15000 shown in Figure 15A ​The micro-LED chip 15000 differs from the micro-LED chip 15000 in that the micro-LED chip 15001 includes a plurality of metal layers 113 formed on the top surface 107b of the top spacer 107 and between adjacent micro-LEDs 610 (3000) and 620 (3000). Figure 15B The components of the micro-LED chip 15001 of the sixteenth embodiment of the implementation are the same as those of the micro-LED chip 15000 of the fifteenth embodiment of the implementation, and thus the detailed description of these components is not repeated. Figure 13A The components of the micro-LED chip 13000 of the thirteenth embodiment of the implementation are the same as those of the micro-LED chip 13000 of the twelfth embodiment of the implementation, and thus the detailed description of these components is not repeated.

[0232] In the embodiment shown, the micro-LEDs 610 and 620 each include the micro-LED structure 3000 described in the third embodiment of the implementation. Figure 15A In the embodiment shown, the micro-LEDs 610 and 620 each include the micro-LED structure 3000 described in the third embodiment of the implementation. 15B In the embodiment shown, the micro-LEDs 610 and 620 each include the micro-LED structure 3000 described in the third embodiment of the implementation. Figure 3A In the embodiment shown, the micro-LEDs 610 and 620 each include the micro-LED structure 3000 described in the third embodiment of the implementation. Figure 3B , 3C In the embodiment shown, the micro-LEDs 610 and 620 each include the micro-LED structure 3000 described in the third embodiment of the implementation.

[0233] Sixteenth embodiment

[0234] Figure 16A FIG. 16 is a cross-sectional view of a micro-LED chip 16000 according to the sixteenth embodiment of the present disclosure. The micro-LED chip 16000 can include a plurality of micro-LEDs. At least one micro-LED included in the micro-LED chip 16000 can have any one of the micro-LED structures 4000, 4001, …, 5003 described above.

[0235] In the embodiment shown, the micro-LEDs 610 and 620 each include the micro-LED structure 3000 described in the third embodiment of the implementation. Figure 16A In the embodiment shown, the micro-LEDs 610 and 620 each include the micro-LED structure 3000 described in the third embodiment of the implementation. Figure 4A The micro-LED structure 4000 of the fourth embodiment of the implementation.

[0236] As shown in FIG. 4, the micro-LED structure 4000 includes a plurality of metal layers 413 formed on the top surface 407b of the top spacer 407 and between adjacent micro-LEDs 610 (4000) and 620 (4000). Figure 16AAs shown, the micro-LEDs 610(4000) and 620(4000) each include a first type of conductive layer 101, a second type of conductive layer 102 stacked on the first type of conductive layer 101, and a light emitting layer 103 formed between the first type of conductive layer 101 and the second type of conductive layer 102. The profile of the first type of conductive layer 101 projected on the bottom surface 102b of the second type of conductive layer 102 is enclosed by the bottom edge 102a of the second type of conductive layer 102. The light emitting layer 103 extends along a horizontal plane away from the top edge 101a of the first type of conductive layer 101, and the edge 103a of the light emitting layer 103 is aligned with the bottom edge 102a of the second type of conductive layer 102.

[0237] The micro-LEDs 610(4000) and 620(4000) each further include a top spacer 107 formed on the light emitting layer 103 and a bottom spacer formed under the light emitting layer 103. Both the edge 107a of the top spacer 107 and the edge 108a of the bottom spacer 108 are aligned with the edge 103a of the light emitting layer 103, which is aligned with the bottom edge 102a of the second type of conductive layer 102.

[0238] The micro light emitting diode chip 16000 further includes a top isolation layer 114 enclosing the light emitting layer 103, and a microlens 111 formed on the second type of conductive layer 102 and on the top surface 114a of the isolation layer 114.

[0239] In addition to the edge 103a of the light emitting layer 103, the edge 107a of the top spacer 107, and the edge 108a of the bottom spacer 108 being aligned with the bottom edge 102a of the second type of conductive layer 102, Figure 16A The components of the micro light emitting diode chip 16000 are the same as those of the micro light emitting diode chip 6005, and thus the detailed description of these components is not repeated. Figure 6F The components of the micro light emitting diode chip 16000 are the same as those of the micro light emitting diode chip 6005, and thus the detailed description of these components is not repeated.

[0240] Variations of the sixteenth embodiment

[0241] Figure 16B A cross-sectional view of a micro light emitting diode chip 16001 according to a variation of the sixteenth embodiment of the present disclosure. Figure 16B The illustrated embodiment is the same as Figure 16A The illustrated embodiment differs from the illustrated embodiment in that the micro light emitting diode chip 16001 further includes a metal layer 113 formed on the top surface 114a of the isolation layer 114 and between adjacent micro-LEDs 610(4000) and 620(4000). In Figure 16BIn the embodiment shown, there is only one metal layer 113 between micro-LEDs 610 (4000) and 620 (4000). Alternatively, in other embodiments, there are multiple metal layers 113 between micro-LEDs 610 (4000) and 620 (4000), and the number of multiple metal layers 113 between micro-LEDs 610 (4000) and 620 (4000) may be more than two. In addition to the metal layer 113, Figure 16B The components of the micro LED chip 16001 are Figure 16A The components of the micro LED chip 16000 are the same, so the detailed description of these components will not be repeated.

[0242] exist Figure 16A and 16B In the illustrated embodiment, micro-LEDs 610 and 620 each include the Figure 4A Alternatively, in other embodiments, each of the micro-LEDs 610 and 620 may include the respective components described in Figure 4B 、 4C and any one of the micro light emitting diode structures 4001, 4002 and 4003 of the first, second and third variations of the fourth embodiment of 4D.

[0243] Seventeenth Implementation Plan

[0244] Figure 17A 17 is a cross-sectional view of a micro-LED chip 17000 according to the seventeenth embodiment of the present disclosure. The micro-LED chip 17000 includes two micro-LEDs 610 (5000) and 620 (5000). The micro-LEDs 610 (5000) and 620 (5000) each include the components described in Figure 5A A micro light emitting diode structure 5000 according to a fifth embodiment.

[0245] Micro LED chip 17000 differs from micro LED chip 16000 in that the outline of second-type conductive layer 102, vertically projected onto top surface 101d of first-type conductive layer 101, is surrounded by top edge 101a of first-type conductive layer 101. Furthermore, edge 103a of light-emitting layer 103, edge 107a of top spacer 107, and edge 108a of bottom spacer 108 are aligned with top edge 101a of first-type conductive layer 101.

[0246] In addition, the micro LED chip 17000 further includes a top isolation layer 114 surrounding the light emitting layer 103. The micro lens 111 is formed on the second type conductive layer 102 and on the top surface 114a of the isolation layer 114. Figure 17A The other components of the micro LED chip 17000 of the fourth embodiment are Figure 16A The components of the micro LED chip 16000 of the second embodiment are the same, and thus detailed descriptions of these components will not be repeated.

[0247] Variant of the Seventeenth Embodiment

[0248] Figure 17B 17 is a cross-sectional view of a micro light emitting diode chip 17001 according to a variation of the seventeenth embodiment of the present disclosure. Figure 17B The embodiment shown is Figure 17A The embodiment shown is different in that the micro-LED chip 17001 further includes a metal layer 113 formed on the top surface 114a of the isolation layer 114 and between adjacent micro-LEDs 610 (5000) and 620 (5000). Figure 17B In the embodiment shown, there is only one metal layer 113 between micro-LEDs 610 (5000) and 620 (5000). Alternatively, in other embodiments, there are multiple metal layers 113 between micro-LEDs 610 (5000) and 620 (5000), and the number of multiple metal layers 113 between micro-LEDs 610 (4000) and 620 (4000) may be more than two. In addition to the metal layer 113, Figure 17B The components of the micro LED chip 17001 are shown in FIG. Figure 17A The components of the micro LED chip 17000 are the same, so the detailed description of these components will not be repeated.

[0249] exist Figure 17A and 17B In the illustrated embodiment, micro-LEDs 610 and 620 each include the Figure 5A Alternatively, in other embodiments, each of the micro-LEDs 610 and 620 may include the respective components described in Figure 5B 、 5C and any one of the micro light emitting diode structures 5001, 5002 and 5003 of the first, second and third variations of the fifth embodiment of 5D.

[0250] Comparative Examples

[0251] Figure 18A cross-sectional view of a micro light emitting diode structure 1 according to a comparative embodiment. Figure 18 The micro light emitting diode structure 1 of the comparative embodiment shown is similar to the micro light emitting diode structure 1 of the first embodiment Figure 1A The micro light emitting diode structure 1000 of the first embodiment differs in that the light emitting layer 103 does not extend along the horizontal plane away from the top edge 101a of the first type conductive layer 101 and the bottom edge 102a of the second type conductive layer 102. Instead, in this comparative embodiment, the edge 103a of the light emitting layer 103 is aligned with both the top edge 101a of the first type conductive layer 101 and the bottom edge 102a of the second type conductive layer 102.

[0252] As explained previously, the light emitting layer 103 can include multiple pairs of quantum well layers. The number of multiple quantum well (MQW) pairs in the light emitting layer 103 is related to the exposed sidewall area of the light emitting layer 103 resulting from, for example, inductively coupled plasma etching. The greater the exposed sidewall area, the greater the number of MQW pairs, resulting in greater surface recombination carrier loss.

[0253] In this comparative embodiment, the sidewalls of the light emitting layer 103 are aligned with the edges 101a and 102a of the first type conductive layer 101 and the second type conductive layer 102. As a result, large surface recombination carrier loss can occur in the micro-LED between the first type conductive layer 101 and the second type conductive layer 102, thus negatively impacting the light emitting efficiency of the micro-LED.

[0254] In contrast, in the first embodiment and other embodiments of the present disclosure, the light emitting layer 103 extends away from the top edge 101a of the first type conductive layer 101 and the bottom edge 102a of the second type conductive layer 102, such that the edge 103a of the light emitting layer 103 does not contact the top edge 101a of the first type conductive layer 101 and the bottom edge 102a of the second type conductive layer 102. As a result, surface recombination carrier loss can not occur in the micro-LED between the first type conductive layer 101 and the second type conductive layer 102. As a result, the light emitting efficiency of the micro-LED is improved.

[0255] While several illustrative embodiments have been described, it will be apparent to those skilled in the art that other embodiments and implementations can be developed by those skilled in the art using the teachings of the present disclosure. Various modifications to the illustrative embodiments will be apparent to those skilled in the art, and the generic principles defined herein can be applied to other embodiments and implementations without departing from the scope of the present disclosure. For example, features described in the context of one embodiment can be common to other embodiments. The scope of the present disclosure is intended to encompass all such modifications and alterations, and is intended to be limited only by the scope of the appended claims, and their equivalents.

Claims

1. A micro light emitting diode chip, characterized by, comprise a plurality of micro-LEDs, wherein at least one micro-LED of the plurality of micro-LEDs comprises: a first type of conductive layer; a second type of conductive layer stacked on the first type of conductive layer; and a light emitting layer formed between the first type of conductive layer and the second type of conductive layer, wherein the light emitting layer is continuously formed on the entire micro-LED chip, the plurality of micro-LEDs sharing the light emitting layer, an isolation structure is formed between adjacent micro-LEDs, at least a portion of the isolation structure is formed in the light emitting layer, and a bottom surface of the isolation structure is aligned with a bottom of the light emitting layer, and a top surface of the isolation structure is aligned with a top surface of the light emitting layer.

2. The micro-LED chip of claim 1, wherein, A top surface area of the isolation structure is equal to a bottom surface area of the isolation structure.

3. The micro-LED chip of claim 1, wherein, A top surface area of the isolation structure is greater than a bottom surface area of the isolation structure.

4. The micro-LED chip of claim 1, wherein, A top surface area of the isolation structure is less than a bottom surface area of the isolation structure.

5. The micro-LED chip of claim 4, wherein, A cross-sectional area of the bottom surface of the isolation structure is greater than the bottom surface area of the isolation structure.

6. The micro-LED chip of claim 1, wherein, The isolation structure is made of light absorbing material.

7. The micro-LED chip of claim 1, wherein, The isolation structure is made of reflective material.

8. The micro-LED chip of claim 1, wherein, further comprising: a top spacer formed on a top surface of the light emitting layer; and a bottom spacer formed on a bottom surface of the light emitting layer, wherein an edge of the top spacer is aligned with an edge of the light emitting layer, and an edge of the bottom spacer is aligned with the edge of the light emitting layer.

9. The micro-LED chip of claim 8, wherein, further comprising, in the at least one micro-LED, a microlens formed on the second type of conductive layer and on a top surface of the top spacer.

10. The micro-LED chip of claim 8, wherein, A thickness of the top spacer is greater than a thickness of the light emitting layer, and a thickness of the bottom spacer is greater than the thickness of the light emitting layer.

11. The micro-LED chip of claim 1, wherein, A top area of the first type of conductive layer is greater than a bottom area of the first type of conductive layer, and a top area of the second type of conductive layer is less than a bottom area of the second type of conductive layer.

12. The micro-LED chip of claim 1, wherein, The light emitting layer comprises only one pair of quantum well layers, or comprises a plurality of pairs of quantum well layers.

13. The micro-LED chip of claim 1, wherein, The at least one micro-LED further comprises a reflective structure surrounding the first type of conductive layer.

14. The micro-LED chip of claim 13, wherein, In the at least one micro-LED, the reflective structure is attached on a sidewall of the first type of conductive layer, and The at least one micro-LED further comprises a bottom connection structure formed under the first type of conductive layer and electrically connected with the first type of conductive layer.

15. The micro-LED chip of claim 14, wherein, further comprising a substrate under the first type of conductive layer, and electrically connected with the bottom connection structure through a connection pad in the substrate.

16. The micro-LED chip of claim 15, wherein, The reflective structure on the sidewall of the first type of conductive layer is inclined with respect to a surface of the substrate, and an inclination angle of the reflective structure with respect to the surface of the substrate is about 30 degrees to about 75 degrees.

17. The micro-LED chip of claim 14, wherein, The reflective structure on the sidewall of the first type of conductive layer has a curved surface.

18. The micro-LED chip of claim 14, wherein, The reflective structure is attached on both the sidewall and a bottom surface of the first type of conductive layer.

19. The micro-LED chip of claim 14, wherein, The reflective structure on the sidewall of the first type of conductive layer is made of an ODR (omni-directional reflector) structure or a DBR (distributed Bragg reflector) structure.

20. The micro-LED chip of claim 1, wherein, The at least one micro-LED further comprises: a reflective structure attached to a bottom surface of the first type of conductive layer.

21. A micro light emitting diode chip, comprising: comprises a plurality of micro-LEDs, wherein at least one micro-LED of the plurality of micro-LEDs comprises: a first type of conductive layer; a second type of conductive layer stacked on the first type of conductive layer; and a light emitting layer formed between the first type of conductive layer and the second type of conductive layer, wherein the light emitting layer is formed continuously across the micro-LED chip, and the plurality of micro-LEDs share the light emitting layer, wherein the micro-LED chip further comprises: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer, wherein an edge of the top spacer is aligned with an edge of the light emitting layer, and an edge of the bottom spacer is aligned with the edge of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light emitting layer, a bottom surface of the isolation structure is aligned with a bottom surface of the bottom spacer, and a top surface of the isolation structure is aligned with a top surface of the top spacer.

22. The micro-LED chip of claim 21, wherein, A top surface area of the isolation structure is equal to a bottom surface area of the isolation structure.

23. The micro-LED chip of claim 21, wherein, A top surface area of the isolation structure is greater than a bottom surface area of the isolation structure.

24. The micro-LED chip of claim 21, wherein, A top surface area of the isolation structure is less than a bottom surface area of the isolation structure.

25. The micro-LED chip of claim 24, wherein, A cross-sectional area of the isolation structure at a bottom surface of the light emitting layer is greater than a bottom surface area of the isolation structure.

26. The micro-LED chip of claim 21, wherein, The isolation structure is made of a light absorbing material.

27. The micro-LED chip of claim 21, wherein, The isolation structure is made of a reflective material.

28. The micro-LED chip of claim 21, wherein, A top area of the first type of conductive layer is greater than a bottom area of the first type of conductive layer, and a top area of the second type of conductive layer is less than a bottom area of the second type of conductive layer.

29. The micro-LED chip of claim 21, wherein, The light emitting layer comprises only one pair of quantum well layers, or comprises a plurality of pairs of quantum well layers.

30. The micro-LED chip of claim 21, wherein, A thickness of the top spacer is greater than a thickness of the light emitting layer, and a thickness of the bottom spacer is greater than the thickness of the light emitting layer.

31. The micro-LED chip of claim 21, wherein, The at least one micro-LED further comprises a reflective structure formed around the first type of conductive layer.

32. The micro-LED chip of claim 31, wherein, In the at least one micro-LED, the reflective structure is attached to a sidewall of the first type of conductive layer, and The at least one micro-LED further comprises a bottom connection structure formed under the first type of conductive layer and electrically connected to the first type of conductive layer.

33. The micro-LED chip of claim 32, wherein, Further comprising a substrate under the first type of conductive layer, and electrically connected to the bottom connection structure through a connection pad in the substrate.

34. The micro-LED chip of claim 33, wherein, The reflective structure on the sidewall of the first type of conductive layer is inclined with respect to a surface of the substrate, and an angle of inclination of the reflective structure with respect to the surface of the substrate is about 30 degrees to about 75 degrees.

35. The micro-LED chip of claim 32, wherein, The reflective structure on the sidewall of the first type of conductive layer has a curved surface.

36. The micro-LED chip of claim 32, wherein, The reflective structure is attached to both the sidewall and the bottom surface of the first type of conductive layer.

37. The micro-LED chip of claim 32, wherein, The reflective structure on the sidewall of the first type of conductive layer is made of an ODR (omni-directional reflector) structure or a DBR (distributed Bragg reflector) structure.

38. The micro-LED chip of claim 31, wherein, In the at least one micro-LED, the reflective structure is configured to concentrate light on the second type of conductive layer.

39. The micro-LED chip of claim 21, wherein, The at least one micro-LED further comprises: a reflective structure attached to a bottom surface of the first type of conductive layer.

40. The micro-LED chip of claim 21, wherein, further comprising: in the at least one micro-LED, a microlens formed on the second type of conductive layer and on a top surface of the top spacer.

41. A micro light emitting diode chip, comprising: comprising a plurality of micro-LEDs, wherein at least one micro-LED of the plurality of micro-LEDs comprises: a first type of conductive layer; a second type of conductive layer stacked on the first type of conductive layer; and a light emitting layer formed between the first type of conductive layer and the second type of conductive layer, wherein the light emitting layer is formed continuously across the micro-LED chip, and the plurality of micro-LEDs share the light emitting layer, wherein the micro-LED chip further comprises: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer, wherein an edge of the top spacer is aligned with an edge of the light emitting layer, and an edge of the bottom spacer is aligned with the edge of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light emitting layer, a top surface of the isolation structure is aligned with a top surface of the top spacer, and a bottom surface of the isolation structure is below the bottom spacer.

42. The micro-LED chip of claim 41, wherein, A top surface area of the isolation structure is equal to a bottom surface area of the isolation structure.

43. The micro-LED chip of claim 41, wherein, A top surface area of the isolation structure is greater than a bottom surface area of the isolation structure.

44. The micro-LED chip of claim 41, wherein, A top surface area of the isolation structure is less than a bottom surface area of the isolation structure.

45. The micro-LED chip of claim 44, wherein, A cross-sectional area of the isolation structure at a bottom surface of the light emitting layer is greater than the bottom surface area of the isolation structure.

46. The micro-LED chip of claim 41, wherein, The isolation structure is made of a light absorbing material.

47. The micro-LED chip of claim 41, wherein, The isolation structure is made of a reflective material.

48. The micro-LED chip of claim 41, wherein, A top area of the first type of conductive layer is greater than a bottom area of the first type of conductive layer, and a top area of the second type of conductive layer is less than a bottom area of the second type of conductive layer.

49. The micro-LED chip of claim 41, wherein, The light emitting layer comprises only one pair of quantum well layers, or comprises a plurality of pairs of quantum well layers.

50. The micro-LED chip of claim 41, wherein, A thickness of the top spacer is greater than a thickness of the light emitting layer, and a thickness of the bottom spacer is greater than the thickness of the light emitting layer.

51. The micro-LED chip of claim 41, wherein, The at least one micro-LED further comprises: a reflective structure formed around the first type of conductive layer.

52. The micro-LED chip of claim 51, wherein, In the at least one micro-LED, the reflective structure is attached to sidewalls of the first type of conductive layer, and The at least one micro-LED further comprises a bottom connection structure formed below the first type of conductive layer and electrically connected to the first type of conductive layer.

53. The micro-LED chip of claim 52, wherein, further comprising: a substrate below the first type of conductive layer, and electrically connected to the bottom connection structure through a connection pad in the substrate.

54. The micro-LED chip of claim 53, wherein, The reflective structure on the sidewalls of the first type of conductive layer is inclined with respect to a surface of the substrate, and an angle of inclination of the reflective structure with respect to the surface of the substrate is about 30 degrees to about 75 degrees.

55. The micro-LED chip of claim 52, wherein, The reflective structure on the sidewalls of the first type of conductive layer has a curved surface.

56. The micro-LED chip of claim 52, wherein, The reflective structure is attached to both the sidewalls and a bottom surface of the first type of conductive layer.

57. The micro-LED chip of claim 52, wherein, The reflective structure of the sidewall of the first type conducting layer is made of an ODR (omni-directional reflector) structure or a DBR (distributed Bragg reflector) structure.

58. The micro-LED chip of claim 51, wherein, In the at least one micro-LED, the reflective structure is configured to concentrate light on the second type conducting layer.

59. The micro-LED chip of claim 41, wherein, The at least one micro-LED further comprises: a reflective structure attached to a bottom surface of the first type conducting layer.

60. The micro-LED chip of claim 41, wherein, Further comprising: in the at least one micro-LED, a microlens formed on the second type conducting layer and on a top surface of the top spacer.

61. A micro light emitting diode chip, comprising: comprising a plurality of micro-LEDs, wherein at least one micro-LED of the plurality of micro-LEDs comprises: a first type conducting layer; a second type conducting layer stacked on the first type conducting layer; and a light emitting layer formed between the first type conducting layer and the second type conducting layer, wherein the light emitting layer is formed continuously across the micro-LED chip, and the plurality of micro-LEDs share the light emitting layer, wherein the micro-LED chip further comprises: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer, wherein an edge of the top spacer is aligned with an edge of the light emitting layer, and an edge of the bottom spacer is aligned with the edge of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light emitting layer, a bottom surface of the isolation structure is aligned with a bottom surface of the bottom spacer, and a top surface of the isolation structure is above the top spacer.

62. The micro-LED chip of claim 61, wherein, The top surface area of the isolation structure is equal to the bottom surface area of the isolation structure.

63. The micro-LED chip of claim 61, wherein, The top surface area of the isolation structure is greater than the bottom surface area of the isolation structure.

64. The micro-LED chip of claim 61, wherein, The top surface area of the isolation structure is less than the bottom surface area of the isolation structure.

65. The micro-LED chip of claim 64, wherein, The cross-sectional area of the isolation structure at the bottom surface of the light emitting layer is greater than the bottom surface area of the isolation structure.

66. The micro-LED chip of claim 61, wherein, The isolation structure is made of a light absorbing material.

67. The micro-LED chip of claim 61, wherein, The isolation structure is made of a reflective material.

68. The micro-LED chip of claim 61, wherein, The top area of the first type conducting layer is greater than the bottom area of the first type conducting layer, and the top area of the second type conducting layer is less than the bottom area of the second type conducting layer.

69. The micro-LED chip of claim 61, wherein, The light emitting layer comprises only one pair of quantum well layers, or comprises a plurality of pairs of quantum well layers.

70. The micro-LED chip of claim 61, wherein, The thickness of the top spacer is greater than the thickness of the light emitting layer, and the thickness of the bottom spacer is greater than the thickness of the light emitting layer.

71. The micro-LED chip of claim 61, wherein, The at least one micro-LED further comprises: a reflective structure formed around the first type conducting layer.

72. The micro-LED chip of claim 71, wherein, In the at least one micro-LED, the reflective structure is attached to a sidewall of the first type conducting layer, and The at least one micro-LED further comprises a bottom connection structure formed below the first type conducting layer and electrically connected to the first type conducting layer.

73. The micro-LED chip of claim 72, wherein, Further comprising: a substrate below the first type conducting layer, and electrically connected to the bottom connection structure through a connection pad in the substrate.

74. The micro-LED chip of claim 73, wherein, The reflective structure on the sidewall of the first type conductive layer is inclined relative to a surface of the substrate, and the inclination angle of the reflective structure relative to the surface of the substrate is about 30 degrees to about 75 degrees.

75. The micro-LED chip of claim 72, wherein, The reflective structure on the sidewall of the first type conductive layer has a curved surface.

76. The micro-LED chip of claim 72, wherein, The reflective structure is attached to both the sidewall and the bottom surface of the first type conductive layer.

77. The micro-LED chip of claim 72, wherein, The reflective structure on the sidewall of the first type conductive layer is made of an ODR (omni-directional reflector) structure or a DBR (distributed Bragg reflector) structure.

78. The micro-LED chip of claim 71, wherein, In the at least one micro-LED, the reflective structure is configured to concentrate light on the second type conductive layer.

79. The micro-LED chip of claim 61, wherein, The at least one micro-LED further comprises: a reflective structure attached to the bottom surface of the first type conductive layer.

80. The micro-LED chip of claim 61, wherein, Further comprising: in the at least one micro-LED, a microlens formed on the second type conductive layer and on a top surface of the top spacer.

81. A micro light emitting diode chip, comprising: comprising a plurality of micro-LEDs, wherein at least one micro-LED of the plurality of micro-LEDs comprises: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light-emitting layer formed between the first type conductive layer and the second type conductive layer, wherein the light-emitting layer is continuously formed on the entire micro-LED chip, and the plurality of micro-LEDs share the light-emitting layer, wherein the micro-LED chip further comprises: a top spacer formed on a top surface of the light-emitting layer; a bottom spacer formed on a bottom surface of the light-emitting layer, wherein an edge of the top spacer is aligned with an edge of the light-emitting layer, and an edge of the bottom spacer is aligned with the edge of the light-emitting layer; and an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light-emitting layer, a bottom surface of the isolation structure is below the bottom spacer, and a top surface of the isolation structure is above the top spacer.

82. The micro-LED chip of claim 81, wherein, The top surface area of the isolation structure is equal to the bottom surface area of the isolation structure.

83. The micro-LED chip of claim 81, wherein, The top surface area of the isolation structure is greater than the bottom surface area of the isolation structure.

84. The micro-LED chip of claim 81, wherein, The top surface area of the isolation structure is less than the bottom surface area of the isolation structure.

85. The micro-LED chip of claim 84, wherein, The cross-sectional area of the bottom surface of the isolation structure at the bottom surface of the light-emitting layer is greater than the bottom surface area of the isolation structure.

86. The micro-LED chip of claim 81, wherein, The isolation structure is made of a light-absorbing material.

87. The micro-LED chip of claim 81, wherein, The isolation structure is made of a reflective material.

88. The micro-LED chip of claim 81, wherein, The top area of the first type conductive layer is greater than the bottom area of the first type conductive layer, and the top area of the second type conductive layer is less than the bottom area of the second type conductive layer.

89. The micro-LED chip of claim 81, wherein, The light-emitting layer includes only one pair of quantum well layers, or includes multiple pairs of quantum well layers.

90. The micro-LED chip of claim 81, wherein, The thickness of the top spacer is greater than the thickness of the light-emitting layer, and the thickness of the bottom spacer is greater than the thickness of the light-emitting layer.

91. The micro-LED chip of claim 81, wherein, The at least one micro-LED further comprises: a reflective structure formed around the first type conductive layer.

92. The micro-LED chip of claim 91, wherein, In the at least one micro-LED, the reflective structure is attached to the sidewall of the first type conductive layer, and The at least one micro-LED further comprises a bottom connection structure formed under the first type conductive layer and electrically connected with the first type conductive layer.

93. The micro-LED chip of claim 92, wherein, Further comprising: a substrate under the first type conductive layer, and electrically connected with the bottom connection structure through a connection pad in the substrate.

94. The micro-LED chip of claim 93, wherein, The reflective structure on the sidewall of the first type conductive layer is inclined relative to a surface of the substrate, and an inclination angle of the reflective structure relative to the surface of the substrate is about 30 degrees to about 75 degrees.

95. The micro-LED chip of claim 92, wherein, The reflective structure on the sidewall of the first type conductive layer has a curved surface.

96. The micro-LED chip of claim 92, wherein, The reflective structure is attached on both the sidewall and the bottom surface of the first type conductive layer.

97. The micro-LED chip of claim 92, wherein, The reflective structure on the sidewall of the first type conductive layer is made of an ODR (omni-directional reflector) structure or a DBR (distributed Bragg reflector) structure.

98. The micro-LED chip of claim 91, wherein, In the at least one micro-LED, the reflective structure is configured to concentrate light on the second type conductive layer.

99. The micro-LED chip of claim 81, wherein, The at least one micro-LED further comprises: A reflective structure attached on the bottom surface of the first type conductive layer.

100. The micro-LED chip of claim 81, wherein, Further comprising: in the at least one micro-LED, a microlens formed on the second type conductive layer and on a top surface of the top spacer.

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