Preparation method of solar cell antireflection film
CN120857686APending Publication Date: 2025-10-28CHUZHOU JIETAI NEW ENERGY TECH CO LTD
Patent Information
- Application Number
- CN202511006130.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-07-21
- Publication Date
- 2025-10-28
Abstract
The invention belongs to the technical field of solar cells, and particularly relates to a method for preparing a solar cell antireflection film capable of reducing dust, which comprises the following steps of: feeding a silicon wafer into a PECVD (Plasma Enhanced Chemical Vapor Deposition) reaction cavity, sequentially heating, keeping constant temperature, vacuumizing, detecting leakage and keeping constant pressure, introducing inert gas consisting of ammonia gas, silane and at least one of argon gas, helium gas and neon gas, depositing a first type of antireflection film on the surface of the silicon wafer; introducing inert gas consisting of at least one of ammonia gas, silane, argon gas, helium gas and neon gas and laughing gas, and depositing a second type of antireflection film; and introducing inert gas consisting of at least one of silane, argon, helium and neon and laughing gas, and depositing a third type antireflection film. According to the method, the problem of dust particle pollution in the deposition process is effectively solved by optimizing the process for preparing the antireflection film through a traditional PECVD method, and the deposition quality of the antireflection film and the yield of the battery are further improved.
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Citation Information
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